JP2019154134A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2019154134A5 JP2019154134A5 JP2018037185A JP2018037185A JP2019154134A5 JP 2019154134 A5 JP2019154134 A5 JP 2019154134A5 JP 2018037185 A JP2018037185 A JP 2018037185A JP 2018037185 A JP2018037185 A JP 2018037185A JP 2019154134 A5 JP2019154134 A5 JP 2019154134A5
- Authority
- JP
- Japan
- Prior art keywords
- turned
- semiconductor power
- switching
- controls
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000003071 parasitic Effects 0.000 claims description 4
Description
前記技術的課題を解決するために、請求項１に記載の発明のゲート駆動装置は、
半導体パワーデバイスのオン・オフを制御するゲートドライバであって、第１の切替素子と、第２の切替素子と、を有し、前記第１の切替素子がオンの場合に前記半導体パワーデバイスをオンにする電源に出力端子が接続され、前記第２の切替素子がオンの場合に前記半導体パワーデバイスをオフにする電源に出力端子が接続される駆動回路を複数有する前記ゲートドライバと、
並列に接続された複数の前記駆動回路に対して、前記各駆動回路における第１の切替素子および第２の切替素子のいずれか一方をオンにし且つ他方をオフに制御する制御部であって、前記半導体パワーデバイスをオンとオフとの間で切り替える場合に発生するサージ電圧およびスイッチング損失の少なくとも一方に基づいて、前記ゲートドライバの中に複数ある前記駆動回路の切替素子をオンにする個数を時間経過に応じて制御する制御部と、
を備えたことを特徴とする。
In order to solve the technical problem, the gate drive device of the invention according to claim 1 is
A gate driver that controls the on / off of a semiconductor power device, which has a first switching element and a second switching element, and when the first switching element is on, the semiconductor power device is operated. The gate driver having a plurality of drive circuits in which an output terminal is connected to a power source to be turned on and an output terminal is connected to a power source to turn off the semiconductor power device when the second switching element is turned on.
A control unit that controls one of the first switching element and the second switching element in each of the driving circuits to be turned on and the other to be turned off for a plurality of the driving circuits connected in parallel. Based on at least one of the surge voltage and the switching loss generated when the semiconductor power device is switched between on and off, the number of times when a plurality of switching elements of the drive circuit in the gate driver are turned on is set. A control unit that controls according to the progress,
It is characterized by being equipped with.
請求項２に記載の発明は、請求項１に記載のゲート駆動装置において、
前記半導体パワーデバイス内部の配線に起因する寄生インダクタンスにより発生する前記サージ電圧およびスイッチング損失の少なくとも一方に基づいて、前記ゲートドライバの中で複数ある前記駆動回路の切替素子をオンにする個数を時間経過に応じて制御する制御部、
を備えたことを特徴とする。
The invention according to claim 2 is the gate driving device according to claim 1.
The number of switching elements of the drive circuit in the gate driver to be turned on is set over time based on at least one of the surge voltage and the switching loss generated by the parasitic inductance caused by the wiring inside the semiconductor power device. Control unit, which controls according to
It is characterized by being equipped with.
請求項３に記載の発明は、請求項１または２に記載のゲート駆動装置において、
前記半導体パワーデバイスの周辺の回路の配線に起因する寄生インダクタンスにより発生する前記サージ電圧およびスイッチング損失の少なくとも一方に基づいて、前記ゲートドライバの中で複数ある前記駆動回路の切替素子をオンにする個数を時間経過に応じて制御する制御部、
を備えたことを特徴とする。
The invention according to claim 3 is the gate driving device according to claim 1 or 2.
The number of multiple switching elements of the drive circuit to be turned on in the gate driver based on at least one of the surge voltage and the switching loss generated by the parasitic inductance caused by the wiring of the circuits around the semiconductor power device. Control unit, which controls over time
It is characterized by being equipped with.
請求項４に記載の発明は、請求項１ないし３のいずれかに記載のゲート駆動装置において、
前記半導体パワーデバイスの切り替えの後に発生する電圧の振動に基づいて、前記ゲートドライバの中で複数ある前記駆動回路の切替素子をオンにする個数を時間経過に応じて制御する前記制御部、
を備えたことを特徴とする。
The invention according to claim 4 is the gate driving device according to any one of claims 1 to 3.
The control unit, which controls the number of switching elements of the drive circuit in the gate driver to be turned on based on the vibration of the voltage generated after the switching of the semiconductor power device, according to the passage of time.
It is characterized by being equipped with.
Claims (4)
並列に接続された複数の前記駆動回路に対して、前記各駆動回路における第１の切替素子および第２の切替素子のいずれか一方をオンにし且つ他方をオフに制御する制御部であって、前記半導体パワーデバイスをオンとオフとの間で切り替える場合に発生するサージ電圧およびスイッチング損失の少なくとも一方に基づいて、前記ゲートドライバの中に複数ある前記駆動回路の切替素子をオンにする個数を時間経過に応じて制御する制御部と、
を備えたことを特徴とするゲート駆動装置。 A gate driver that controls the on / off of a semiconductor power device, which has a first switching element and a second switching element, and when the first switching element is on, the semiconductor power device is operated. The gate driver having a plurality of drive circuits in which an output terminal is connected to a power source to be turned on and an output terminal is connected to a power source to turn off the semiconductor power device when the second switching element is turned on.
A control unit that controls one of the first switching element and the second switching element in each of the driving circuits to be turned on and the other to be turned off for a plurality of the driving circuits connected in parallel. Based on at least one of the surge voltage and the switching loss generated when the semiconductor power device is switched between on and off, the number of times when a plurality of switching elements of the drive circuit in the gate driver are turned on is set. A control unit that controls according to the progress,
A gate drive device characterized by being equipped with.
を備えたことを特徴とする請求項１に記載のゲート駆動装置。 The number of switching elements of the drive circuit in the gate driver to be turned on is set over time based on at least one of the surge voltage and the switching loss generated by the parasitic inductance caused by the wiring inside the semiconductor power device. Control unit, which controls according to
The gate driving device according to claim 1, wherein the gate driving device is provided.
を備えたことを特徴とする請求項１または２に記載のゲート駆動装置。 The number of multiple switching elements of the drive circuit to be turned on in the gate driver based on at least one of the surge voltage and the switching loss generated by the parasitic inductance caused by the wiring of the circuits around the semiconductor power device. Control unit, which controls over time
The gate driving device according to claim 1 or 2, wherein the gate driving device is provided.
を備えたことを特徴とする請求項１ないし３のいずれかに記載のゲート駆動装置。 The control unit, which controls the number of switching elements of the drive circuit in the gate driver to be turned on based on the vibration of the voltage generated after the switching of the semiconductor power device, according to the passage of time.
The gate driving device according to any one of claims 1 to 3, wherein the gate driving device is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018037185A JP7025007B2 (en) | 2018-03-02 | 2018-03-02 | Gate drive |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018037185A JP7025007B2 (en) | 2018-03-02 | 2018-03-02 | Gate drive |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019154134A JP2019154134A (en) | 2019-09-12 |
| JP2019154134A5 true JP2019154134A5 (en) | 2021-02-04 |
| JP7025007B2 JP7025007B2 (en) | 2022-02-24 |
Family
ID=67947322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018037185A Active JP7025007B2 (en) | 2018-03-02 | 2018-03-02 | Gate drive |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP7025007B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101622134B1 (en) | 2015-01-08 | 2016-05-18 | 엑스론코리아(주) | apparatus for treating spindle oil and machine having the same |
| JP7296915B2 (en) * | 2020-04-27 | 2023-06-23 | 東芝三菱電機産業システム株式会社 | Semiconductor switch driver and power converter |
| JP2022109141A (en) | 2021-01-14 | 2022-07-27 | 株式会社東芝 | Design support device, design support system, electric apparatus, design support method, program, and storage medium |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010283973A (en) | 2009-06-04 | 2010-12-16 | Denso Corp | Driving device for power-switching element |
| JP5959901B2 (en) | 2012-04-05 | 2016-08-02 | 株式会社日立製作所 | Semiconductor drive circuit and power conversion device |
| US9425785B1 (en) * | 2015-07-14 | 2016-08-23 | Allegro Microsystems, Llc | Switching regulator with controllable slew rate |
| JP6836342B2 (en) | 2016-06-22 | 2021-02-24 | ルネサスエレクトロニクス株式会社 | Drive and power supply system |
-
2018
- 2018-03-02 JP JP2018037185A patent/JP7025007B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2017103380A5 (en) | Semiconductor module | |
| US11171638B2 (en) | Electronic apparatus | |
| JP2019154134A5 (en) | ||
| JP2016533157A5 (en) | Solid state fault current limiting device, method and system for limiting fault current | |
| JP2018014798A5 (en) | ||
| JP2008509548A5 (en) | ||
| JP2015138154A5 (en) | ||
| JP5887220B2 (en) | Semiconductor module | |
| JP2017005089A5 (en) | Semiconductor device and inverter | |
| JP2013503556A5 (en) | ||
| MY184790A (en) | Circuit and control method for the same | |
| JP2012195937A5 (en) | ||
| JP2014072191A5 (en) | ||
| JP2018186408A5 (en) | ||
| JP2008118784A (en) | Power conversion circuit | |
| JP2016067004A5 (en) | Semiconductor device | |
| TWI543504B (en) | Electrostatic discharge protection circuit | |
| JP2020036424A5 (en) | ||
| JP2016215534A5 (en) | ||
| JP2019047301A5 (en) | ||
| CN102739218A (en) | Switching device and switching module | |
| JP6081035B2 (en) | Digital output circuit, printed wiring board and industrial equipment | |
| JP2017108561A (en) | Drive circuit | |
| JP6392173B2 (en) | Load drive device | |
| KR102504096B1 (en) | Pwm method for controling bldc motors and device thereof |