JP2010283973A - Driving device for power-switching element - Google Patents

Driving device for power-switching element Download PDF

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JP2010283973A
JP2010283973A JP2009134687A JP2009134687A JP2010283973A JP 2010283973 A JP2010283973 A JP 2010283973A JP 2009134687 A JP2009134687 A JP 2009134687A JP 2009134687 A JP2009134687 A JP 2009134687A JP 2010283973 A JP2010283973 A JP 2010283973A
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Prior art keywords
switching
power switching
charging
power
discharging
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Japanese (ja)
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Tsuneo Maehara
Yusuke Shindo
恒男 前原
祐輔 進藤
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Denso Corp
株式会社デンソー
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Abstract

When driving the power switching element Sw by charging / discharging the gate of the power switching element Sw, it is easy to restrict the adjustment of the change rate of the amount of charge stored in the gate.
A parallel connection body of charging switching elements Sc1, Sc2,... Is connected in series between a power source 22 for charging the gate of the power switching element Sw and the gate. Further, a parallel connection body of discharge switching elements Sd1, Sd2,... Is connected in series to the gate and emitter E of the power switching element Sw. These charging switching elements Sc1, Sc2,... And discharging switching elements Sd1, Sd2,... Are formed in a semiconductor integrated circuit (IC20). Which of these is turned on is defined by the switching pattern stored in the EEPROM 24a.
[Selection] Figure 2

Description

  The present invention relates to a drive device for a power switching element that drives the power switching element by charging and discharging electric charges to and from a conduction control terminal of the voltage control type power switching element.

  Conventionally, this type of drive device controls conduction of a so-called gate resistor, which is a resistor as a linear element, in order to adjust the rate of change (charge rate, discharge rate) of charge stored in the conduction control terminal of the power switching element. It is well known to connect to terminals.

  Conventionally, as shown in, for example, Patent Document 1 below, there has been proposed one that switches a gate resistance in accordance with a current flowing through a power MOS field effect transistor. Thereby, under the situation where the surge accompanying switching of the switching state becomes large, the switching loss can be reduced as much as possible while suppressing this.

Japanese Patent No. 328709

  By the way, the fact that the charge / discharge speed of the conduction control terminal can be adjusted by the resistance value of the gate resistance means that the charge / discharge speed is limited by the resistance value of the gate resistance. For this reason, it is necessary to select a gate resistance for each specification such as a power switching element, and it is difficult to provide versatility for various specifications.

  Further, when the means for varying the gate resistance is provided as described above, the circuit scale of the driving device may increase by providing a plurality of gate resistances. Particularly, in recent years, for example, a switching element connected to a gate resistor is configured by an integrated circuit for downsizing of a driving device. In this case, in order to connect the integrated circuit and the gate resistor, There is also a problem that the number of terminals increases.

  The present invention has been made in order to solve the above-mentioned problems, and its purpose is to conduct electricity when the power switching element is driven by charging / discharging the conduction control terminal of the voltage-controlled power switching element. An object of the present invention is to provide a drive device for a power switching element that can more appropriately adjust the rate of change in the amount of charge stored in a control terminal.

  Hereinafter, means for solving the above-described problems and the operation and effects thereof will be described.

  According to a first aspect of the present invention, there is provided a driving device for a power switching element that drives the power switching element by charging / discharging the conduction control terminal of the voltage control type power switching element. At least one of the path and the discharge path for discharging the electric charge is configured such that a parallel connection body of a plurality of switching elements is connected in series to a single electric path connected to the conduction control terminal. Features.

  In the above invention, the resistance value of the current flow path depends on how many of the plurality of switching elements are turned on when current is passed through the at least one path, and which is turned on. Can be adjusted. For this reason, the change rate of the electric charge stored in the conduction control terminal of the power switching element can be adjusted more appropriately.

  According to a second aspect of the present invention, in the first aspect of the invention, the plurality of switching elements that are turned on when a current flows through the at least one path are variably set according to the temperatures of the plurality of switching elements. It is characterized by that.

  As the temperature of the switching element is higher, the on-resistance of the switching element tends to increase. In the above invention, in view of this point, the switching element that is turned on according to the temperature is variably set, so that the resistance value of the flow path of at least one of the currents is preferably suppressed from changing due to a temperature change. Can do.

  A third aspect of the invention is characterized in that, in the first or second aspect of the invention, the plurality of switching elements have their on-resistance values set equal to each other.

  In the above invention, since the on-resistance values of the plurality of switching elements are equal to each other, when the resistance value of the at least one current flow path is adjusted, the change in the resistance value of the flow path due to the change in the number of the on-states Can be easily grasped.

  According to a fourth aspect of the present invention, in the first or second aspect of the invention, the plurality of switching elements include ones having different on-resistance values.

  In the above invention, the resistance value of the at least one current flow path can be set to various values without increasing the number of the switching elements that are turned on.

  The invention according to claim 5 is the invention according to claim 4, wherein the different on-resistance values constitute a geometric series having a common ratio of “2”.

  The switching element group having the on-resistance can be easily configured by a geometric series whose area has a common ratio of “1/2”.

  According to a sixth aspect of the present invention, in the invention according to any one of the first to fifth aspects, prior to switching the switching state of the power switching element, the switching element that is turned on among the plurality of switching elements. It is characterized by determining.

  In the above invention, the change rate of the charge stored in the conduction control terminal can be variably set. For this reason, according to the priority of the reduction request | requirement of the power loss at the time of switching of the switching state of a power switching element, and the reduction request | requirement of a surge, these requests | requirements can be met.

  A seventh aspect of the present invention is the invention according to any one of the first to fifth aspects, wherein a switching state of the switching state of the power switching element is changed to the off state among the plurality of switching elements. It is characterized by being changed by.

  In the above invention, the change rate of the charge stored in the conduction control terminal can be variably set during the switching period of the switching state of the power switching element. For this reason, it is possible to achieve both a reduction in power loss and a reduction in surge when switching the switching state of the power switching element.

  The invention according to claim 8 is the invention according to any one of claims 1 to 7, further comprising non-volatile storage means for storing a switching element to be turned on among the plurality of switching elements. Features.

  In the above invention, by providing the storage means, it is possible to avoid the necessity of instructing which of the plurality of switching elements is to be turned on each time.

  The invention according to claim 9 is the invention according to any one of claims 1 to 8, wherein the plurality of switching elements constitute an integrated circuit, and the integrated circuit and the conduction control terminal are It is characterized in that it is electrically connected without a resistor as a discrete component.

  In the above invention, the configuration of the drive device can be made as simple as possible.

  The invention according to claim 10 is the invention according to any one of claims 1 to 8, wherein the plurality of switching elements constitute an integrated circuit, and the integrated circuit and the conduction control terminal are It is electrically connected through a resistor as a discrete component.

  When charging / discharging the conduction control terminal of the power switching element, there is a demand to limit the speed to some extent. For this reason, a certain resistance value is required for the at least one path. In this regard, in the above invention, at least a part of the required resistance value can be given by the resistor.

  According to an eleventh aspect of the present invention, there is provided a driving device for a power switching element that drives the power switching element by charging / discharging the conduction control terminal of the voltage control type power switching element. At least one of the path and the discharge path for discharging the electric charge includes an electrical path connecting the conduction control terminal and an integrated circuit and the integrated circuit, and the integrated circuit includes the at least one electrical path. It has a function of changing the resistance value of the above.

  In the above invention, the function of changing the resistance value of the electrical path is mounted on the integrated circuit, so that the integrated circuit includes a plurality of resistors outside the integrated circuit and switching elements connected to each of these resistors. Compared to the case, the number of terminals of the integrated circuit can be reduced.

1 is a system configuration diagram according to a first embodiment. FIG. The circuit diagram which shows the circuit structure of the drive unit concerning the embodiment. The top view which shows the formation area of the switching element for charge concerning the embodiment. The figure which shows the relationship between the power loss of a power switching element, a surge, and gate resistance. The figure which shows the setting method of the number of ON operations of the switching element for charge and the switching element for discharge concerning 2nd Embodiment. The time chart which shows the setting method of the ON operation number of the switching element for charge concerning 3rd Embodiment, and the switching element for discharge. The top view which shows the formation area of the switching element for charge concerning 4th Embodiment. The circuit diagram which shows the circuit structure of the drive unit concerning 5th Embodiment. The circuit diagram which shows the circuit structure of the drive unit concerning 6th Embodiment. The figure which shows the setting method of the number of ON operations of the switching element for charge and the switching element for discharge concerning the embodiment.

(First embodiment)
Hereinafter, a first embodiment in which a drive device for a power switching element according to the present invention is applied to a hybrid vehicle will be described with reference to the drawings.

  FIG. 1 shows the system configuration of this embodiment. As shown in the figure, a motor generator 10 as an in-vehicle main machine is connected to a high voltage battery 12 via an inverter IV and a converter CV. The inverter IV is configured by connecting three series-connected bodies of a high-potential side power switching element Swp and a low-potential side power switching element Swn in parallel. Connection points of these power switching elements Swp and power switching elements Swn are connected to the respective phases of the motor generator 10. Further, the converter CV includes a capacitor C, a series connection body of the power switching element Swp on the high potential side and the power switching element Swn on the low potential side, a connection point of the power switching element Swp and the power switching element Swn, and the high voltage battery 12. And a reactor L that connects the two.

  Between the input / output terminals (between the collector and the emitter) of the high potential side power switching element Swp and the low potential side power switching element Swn, there is a high potential side freewheel diode FDp and a low potential side freewheel diode. The cathode and anode of FDn are connected.

  The drive unit DU is connected to the conduction control terminals (gates) of the power switching elements Swp and Swn constituting the inverter IV. Thereby, the power switching elements Swp and Swn are driven by the control device 16 using the low voltage battery 14 as a power source via the drive unit DU. The control device 16 controls operation signals gup, gvp, and gwp for operating the power switching elements Swp for the U phase, V phase, and W phase of the inverter IV based on detection values of various sensors (not shown), and power switching. Operation signals gn, gvn, and gwn for operating the element Swn are generated and output. Further, operation signals gcp and gcn for operating the power switching elements Swp and Swn of the converter CV are generated and output. Thereby, the power switching elements Swp and Swn are operated by the control device 16 via the drive unit DU.

  Note that the high voltage system including the inverter IV and the converter CV and the low voltage system including the control device 16 are insulated by an insulating means such as a photocoupler (not shown), and the operation signal is high via the insulating means. Output to the voltage system.

  The power switching elements Swp and Swn are both constituted by insulated gate bipolar transistors (IGBT). The power switching elements Swp and Swn include a sense terminal ST that outputs a minute current having a correlation with a current flowing between the input terminal and the output terminal.

  FIG. 2 shows a circuit configuration of the drive unit DU according to the present embodiment. In the following description, the power switching elements Swp and Swn are collectively referred to as the power switching element Sw, and the free wheel diodes FDp and FDn are collectively referred to as the free wheel diode FD. The operation signals gup, gvp, gwp, gcp, gun, gvn, gwn, and gcn are collectively referred to as an operation signal g.

  As illustrated, the drive unit DU includes a shunt resistor 30 provided between the emitter E of the power switching element Sw and the sense terminal ST. Further, the drive unit DU includes a semiconductor integrated circuit (IC20). The power switching element Sw, the shunt resistor 30, and the IC 20 are packaged into a single member.

  Here, the gate of the power switching element Sw is connected to the IC 20. Further, the IC 20 takes in the amount of voltage drop due to the shunt resistor 30. Further, an operation signal g can be input to the IC 20.

  Specifically, the IC 20 includes a power source 22 for charging the gate of the power switching element Sw, and charging switching elements Sc1, Sc2,... Scn connected in series between the power source 22 and the gate (hereinafter, in a case where they are summarized) , And a parallel connection body of the charging switching element Sc). These charging switching elements Sc are constituted by P-channel MOS field effect transistors. In addition, the IC 20 includes discharge switching elements Sd1, Sd2,... Sdm connected in series between the gate and the emitter E of the power switching element Sw (hereinafter, collectively referred to as a discharge switching element Sd). The parallel connection body is provided. These discharge switching elements Sd are N-channel MOS field effect transistors.

  The charging switching element Sc and the discharging switching element Sd have resistances (on-resistances) in the on state that are equal to each other. As shown in FIG. 3, the charging switching elements Sc1, Sc2,... May be formed on the semiconductor chip with the same area as shown in the example of the charging switching element Sc. That is, since the on-resistance is inversely proportional to the cross-sectional area, the on-resistance can be made the same.

  The IC 20 further includes a drive control circuit 24 that takes in the operation signal g, the voltage of the shunt resistor 30, and the like, and turns on and off the charging switching element Sc and the discharging switching element Sd based on the operation signal g. That is, when the operation signal g corresponds to the on command of the power switching element Sw, the charging switching element Sc is turned on and the discharging switching element Sd is turned off. When the operation signal g corresponds to an off command for the power switching element Sw, the charging switching element Sc is turned off and the discharging switching element Sd is turned on. The drive control circuit 20 further turns off the power switching element Sw regardless of the operation signal g when it is determined based on the voltage of the shunt resistor 30 that the magnitude of the current flowing through the power switching element Sw exceeds the threshold value. Also do.

  The drive control circuit 24 further includes a nonvolatile memory (EEPROM 24a). The EEPROM 24a is means for storing information that defines the switching pattern of the charging switching element Sc and the discharging switching element Sd. The EEPROM 24 can write data related to the pattern from the outside.

  Here, the switching pattern is set so as to satisfy a requirement that is in a trade-off relationship between suppression of surge and reduction of power loss due to switching of the switching state of the power switching element Sw. In FIG. 4, the relationship according to the gate resistance (resistance value Rg) about the surge and power loss of the power switching element Sw is shown. As shown in the figure, the smaller the resistance value of the gate resistance, the smaller the power loss, but the greater the surge. This is because the rate of change of the gate charge (charge rate or discharge rate) increases as the resistance value of the gate resistance decreases.

  Here, the gate resistance is a linear element and does not exist in the present embodiment. However, in view of the fact that the gate resistance is a means for adjusting the rate of change of the gate charge, it can be seen that the parallel connection body of the charging switching element Sc and the parallel connection body of the discharging switching element Sd correspond to this. That is, since the charge transfer speed in the charge path and the discharge path is adjusted by the number of the switching elements Sc and the switching elements Sd that are turned on, the charge transfer speed is adjusted in the same way as the gate resistance. It is a means to adjust the rate of change. For this reason, by determining the number of charging switching elements Sc and discharging switching elements Sd that are to be turned on, it is possible to appropriately respond to both a surge reduction request and a power loss reduction request.

  In particular, in the present embodiment, since the number of the switching elements Sc for charging and the switching elements Sd for discharging that are turned on can be designated from the outside of the drive unit DU, the power switching element Sw and the IC 20 are packaged in one package. Even after being covered with a resin or the like to make it possible, the charge change rate of the gate of the power switching element Sw can be adjusted. Therefore, even if the IC 20 and the power switching element Sw are packaged and mass-produced, the change rate of the gate charge can be adjusted according to the specifications of the power conversion system shown in FIG. Can be made versatile.

  According to the embodiment described in detail above, the following effects can be obtained.

  (1) The gate charging path of the power switching element Sw is configured with a parallel connection body of the charging switching element Sc, and the discharge path of the gate of the power switching element Sw is configured with a parallel connection body of the discharging switching element Sd. Configured. Accordingly, the resistance value of the current flow path can be adjusted according to how many of the charging switching element Sc and the discharging switching element Sd are turned on.

  (2) The on-resistance values of the plurality of charging switching elements Sc are set to be equal to each other. The on-resistance values of the plurality of discharge switching elements Sd were set to be equal to each other. Thereby, it is possible to easily grasp the change in the resistance value of the charge / discharge path of the gate due to the change in the number of the on-states. Incidentally, here, the resistance value may be a value obtained by dividing the applied voltage of each path by the current flowing through the path.

  (3) The EEPROM 24a is provided which stores the charging switching element Sc which is turned on and the discharging switching element Sd which is turned on. Thereby, it is possible to avoid the necessity of instructing which one of the plurality of switching elements is turned on each time.

  (4) The gate of the power switching element Sw and the IC 20 were electrically connected without providing a resistor as a discrete component. Thereby, the structure of the drive unit DU can be simplified as much as possible.

(Second Embodiment)
Hereinafter, the second embodiment will be described with reference to the drawings with a focus on differences from the first embodiment.

  In the present embodiment, as shown in FIG. 5, the number of charging switching elements Sc that are turned on and the number of discharging switching elements Sd that are turned on based on the current flowing through the power switching element Sw. Adjust. Here, the current flowing through the power switching element Sw is defined by an average current or a maximum current during the ON operation period. This current cannot be grasped based on the minute current output from the sense terminal ST before the power switching element Sw is switched to the ON state. For this reason, for example, the current that flows when the power switching element Sw was previously turned on is used as the current that is assumed to flow this time.

  Specifically, as shown in FIG. 5A, the number of charging switching elements Sc that are turned on is once decreased and then increased as the current flowing through the power switching element Sw increases. That is, the number of charging switching elements Sc that are turned on has a minimum value. As a result, as the current between the input and output terminals of the power switching element Sw increases, the charging speed of the gate can be gradually decreased and then gradually increased. This is a setting in view of the fact that the surge generated when turning on the power switching element Sw tends to increase and then decrease as the current flowing through the power switching element Sw increases. As a result, it is possible to appropriately suppress this in a situation where the surge becomes large, and when it is assumed that the surge is not so large, the switching loss can be increased by increasing the charging speed of the gate as much as possible. Minimize as much as possible.

  Also, as shown in FIG. 5B, the number of discharge switching elements Sd that are turned on is reduced as the current flowing through the power switching element Sw increases. Thereby, the gate discharge rate can be reduced as the current flowing between the input / output terminals of the power switching element Sw increases. This is a setting in view of the fact that the surge generated when the power switching element Sw is turned off tends to increase as the current flowing between the input and output terminals of the power switching element Sw increases. As a result, it is possible to appropriately suppress this in a situation where the surge becomes large, and when it is assumed that the surge will not become so large, the increase of the switching loss is maximized by increasing the gate discharge speed as much as possible. Suppress.

  The switching patterns shown in FIG. 5 are stored in the EEPROM 24a, and the drive control circuit 24 selects the switching pattern based on the voltage drop amount of the shunt resistor 30 that is input.

  According to the present embodiment described above, the following effects can be obtained in addition to the above-described effects of the first embodiment.

  (5) The charging switching element Sc to be turned on and the discharging switching element Sd to be turned on are determined prior to switching of the switching state of the power switching element Sw. Thereby, according to the priority of the reduction request | requirement of the power loss at the time of switching of the switching state of the power switching element Sw, and the reduction request | requirement of a surge, these requests | requirements can be met.

(Third embodiment)
Hereinafter, the third embodiment will be described with reference to the drawings with a focus on differences from the first embodiment.

  In the present embodiment, the switching pattern of the charging switching element Sc and the discharging switching element Sd is changed during the switching period of the switching state. FIG. 6 illustrates a switching pattern changing method of this embodiment. Specifically, FIG. 6A shows the number of charging switching elements Sc that are in an on state, and FIG. 6B shows the discharging switching element Sd that is in an on state. FIG. 6C shows the emitter-gate voltage (gate voltage Vge) of the power switching element Sw.

  As illustrated, in the present embodiment, the charging speed of the gate is increased by increasing the number of charging switching elements Sc that are turned on in the middle of switching the on-state of the power switching element Sw. Here, the period in which the number of charging switching elements Sc that are in the on state is small includes the period in which the recovery current of the freewheeling diode FD flows due to the switching of the power switching element Sw to the on state. To do. Thereby, the surge resulting from the recovery current can be suppressed. Then, the switching loss is reduced by increasing the number of charging switching elements Sc that are turned on.

  Further, during the switching of the power switching element Sw to the off state, the discharge rate of the gate is increased by increasing the number of discharge switching elements Sd that are turned on. Thereby, the surge is suppressed by reducing the rate of change of the current flowing through the power switching element Sw at the time of switching to the off state, and thereafter the power loss is reduced by increasing the gate discharge rate.

  According to the present embodiment described above, the following effects can be obtained in addition to the above-described effects of the first embodiment.

  (6) The number of charging switching elements Sc to be turned on and the number of discharging switching elements Sd to be turned on are increased during the switching period of the switching state of the power switching element Sw. . Thereby, suitable coexistence with the reduction of the power loss at the time of switching of the switching state of the power switching element Sw and the reduction of a surge can be aimed at.

(Fourth embodiment)
Hereinafter, the fourth embodiment will be described with reference to the drawings with a focus on differences from the first embodiment.

  In the present embodiment, the charging switching elements Sc are set to have different on-resistances or the discharging switching elements Sd have different ON-resistances.

  Specifically, as shown in FIG. 7 as an example of the charging switching element Sc, when the area of the charging switching element Sc1 is an area S, the area of the charging switching element Sci (i = 1, 2,...) Is “ S / (2) ^ (i-1) ". In this case, if the on-resistance of the charging switching element Sc1 is the on-resistance R1, the on-resistance of the charging switching element Sci is “R1 × (2) ^ (i−1)”.

  According to the present embodiment described above, the following effects can be obtained in addition to the effects (1), (3), and (4) of the first embodiment.

  (7) The switching element Sc for charging and the switching element Sd for discharging include elements whose on-resistance values are different from each other. Accordingly, the resistance values of the charging path and discharging path of the gate can be set to various values without increasing the number of the switching elements Sc for charging and the switching element Sd for discharging that are turned on.

  (8) A plurality of on-resistance values of the charging switching element Sc and a plurality of on-resistance values of the discharging switching element Sd constitute a geometric series having a common ratio of “2”. Thereby, the on-resistance can be easily made different by setting the area of the charging switching element Sc and the discharging switching element Sd to a geometric series with a common ratio of “½”.

(Fifth embodiment)
Hereinafter, a fifth embodiment will be described with reference to the drawings, focusing on differences from the first embodiment.

  FIG. 8 shows a configuration of the drive unit DU according to the present embodiment. In FIG. 5, the members corresponding to those shown in FIG.

  As shown in the figure, in the present embodiment, the gate of the power switching element Sw and the charging switching element Sc of the IC 20 are connected by the charging resistor 32, and the gate of the power switching element Sw and the discharging switching element of the IC 20 are connected. Sd was connected by a discharge resistor 34. These charging resistor 32 and discharging resistor 34 are discrete components and are linear elements.

  According to the present embodiment described above, the following effects can be obtained in addition to the effects (1) to (3) of the first embodiment.

  (9) The gate of the power switching element Sw and the IC 20 are electrically connected via the charging resistor 32 and the discharging resistor 34. Thereby, at least a part of the resistance value necessary for charging and discharging the gate can be provided by the resistor as a linear element.

(Sixth embodiment)
Hereinafter, the sixth embodiment will be described with reference to the drawings with a focus on differences from the first embodiment.

  FIG. 9 shows a configuration of the drive unit DU according to the present embodiment. In FIG. 9, members corresponding to those shown in FIG. 2 are given the same reference numerals for convenience.

  As shown in the figure, the IC 20 includes a temperature-sensitive diode 26. The temperature sensitive diode 26 is a temperature detecting means for the charging switching element Sc and the discharging switching element Sd. The output voltage (temperature detection signal) of the temperature sensing diode 26 is taken into the drive control circuit 24. In the drive control circuit 24, these switching patterns are variably set according to the temperature of the charging switching element Sc and the temperature of the discharging switching element Sd. This is because, as shown in FIG. 10A, the on-resistances of the charging switching element Sc and the discharging switching element Sd are temperature-dependent. FIG. 10A shows that the on-resistance increases as the temperature increases.

  For this reason, in the drive control circuit 24, as shown in FIG. 10B, the number of charging switching elements Sc and discharging switching elements Sd that are turned on increases as the temperature increases. Accordingly, the resistance value of the current flow path including the parallel connection body of the charging switching element Sc so as to compensate for the increase in the on-resistance due to the temperature rise, and the current value including the parallel connection body of the discharging switching element Sd The resistance value of the distribution channel can be set.

  According to this embodiment described above, the following effects can be obtained in addition to the effects (1) to (4) of the first embodiment.

  (10) The number of charging switching elements Sc that are turned on and the number of discharging switching elements Sd that are turned on are increased as these temperatures increase. Thereby, it can suppress suitably that the resistance value of a gate charge path | route or a gate discharge path | route changes with temperature changes.

(Other embodiments)
Each of the above embodiments may be modified as follows.

  In each of the above-described embodiments, the storage unit (EEPROM 24a) that stores one of the charging switching element Sc and the discharging switching element Sd that is turned on is provided, but the invention is not limited thereto. For example, the control device 16 may be provided with a function of outputting a designation signal for designating what is to be turned on, and a means for inputting the designation signal to the drive unit DU. In this case, a memory such as a volatile memory may be provided. Thus, each time the drive unit DU is activated, it is possible to specify what is to be turned on by outputting the instruction signal only once.

  In the second embodiment, the number of charging switching elements Sc and discharging switching elements Sd to be turned on is variably set based on the amount of current flowing through the power switching element Sw. However, the present invention is not limited to this. For example, the temperature of the power switching element Sw may be taken into account in the variable setting. Further, for example, atmospheric pressure may be taken into account when the variable setting is performed. Furthermore, the variable setting according to the current of the power switching element Sw is not limited to the premise, and the variable setting according to at least one of these three parameters may be performed.

  In the third embodiment, the number of the switching element Sc for charging and the switching element Sd for discharging being changed once in the switching period of the switching state of the power switching element Sw is changed. Instead, it may be changed in multiple stages, such as changing the number of things that are turned on in two stages.

  -You may change the said 2nd, 3rd, 5th, 6th embodiment by the change of the said 4th Embodiment with respect to the said 1st Embodiment.

  In the fourth embodiment, different on-resistance values among the on-resistances of the charging switching element Sc and the discharging switching element Sd constitute a geometric series having a common ratio of “2”. For example, the minimum ON resistance value may be “2 times, 3 times, 4 times,...”.

  In the fifth and sixth embodiments, the charging resistor 32 and the discharging resistor 34 are separate members, but the present invention is not limited thereto, and these members may be common members.

  In each of the above embodiments, it is assumed that the IC 20 and the power switching element Sw are packaged, but the present invention is not limited to this. Even if these are separate members, for example, if the configuration shown in FIG. 2 is provided, the IC 20 can cope with various specifications of the power switching element Sw. Can be high.

  In each of the above embodiments, the charging switching element Sc and the discharging switching element Sd are plural, but the present invention is not limited to this, and only one of them may be plural.

  The charging switching element Sc is not limited to a P-channel MOS field effect transistor, and may be, for example, an N-channel MOS field effect transistor. The field effect transistor is not limited to a MOS field effect transistor, and may be any field effect transistor such as a MIS field effect transistor. Furthermore, it is not limited to a field effect transistor, and may be a bipolar transistor, for example.

  The discharge switching element Sd is not limited to an N-channel MOS field effect transistor, and may be a P-channel MOS field effect transistor, for example. The field effect transistor is not limited to a MOS field effect transistor, and may be an arbitrary field effect transistor such as a MIS field effect transistor. Furthermore, it is not limited to a field effect transistor, and may be a bipolar transistor, for example.

  The power switching element Sw is not limited to the IGBT, and may be, for example, a power MOS field effect transistor.

  -The power conversion circuit composed of power switching elements is not limited to the inverter IV and the converter CV. For example, a step-down converter that steps down the voltage of the high voltage battery 12 and supplies it to the low voltage battery 14 may be used.

  The vehicle is not limited to a hybrid vehicle, but may be an electric vehicle, for example. Moreover, it is not restricted to the drive device mounted in a vehicle.

  20 ... IC, 24 ... drive control circuit, 24a ... EEPROM, Sw ... power switching element, DU ... drive unit.

Claims (11)

  1. In the drive device for the power switching element that drives the power switching element by charging / discharging the conduction control terminal of the voltage control type power switching element,
    At least one of a charging path for charging the charge and a discharging path for discharging the charge is connected in series to a single electric path connected to the conduction control terminal, and a parallel connection body of a plurality of switching elements is connected in series. A drive device for a power switching element, characterized by being configured.
  2.   2. The power switching element drive device according to claim 1, wherein the plurality of switching elements that are turned on when a current flows through the at least one path are variably set according to temperatures of the plurality of switching elements. 3. .
  3.   3. The power switching element driving device according to claim 1, wherein the plurality of switching elements are set to have the same on-resistance value.
  4.   3. The power switching element driving device according to claim 1, wherein the plurality of switching elements include ones having different on-resistance values. 4.
  5.   5. The driving device of a power switching element according to claim 4, wherein the different on-resistance values constitute a geometric series having a common ratio of “2”.
  6.   6. The power switching element according to claim 1, wherein one of the plurality of switching elements to be turned on is determined prior to switching of the switching state of the power switching element. Drive device.
  7.   6. The power switching element according to claim 1, wherein one of the plurality of switching elements that is turned off is changed during a switching period of a switching state of the power switching element. Drive device.
  8.   The drive device for a power switching element according to claim 1, further comprising a nonvolatile storage unit that stores a switching element to be turned on among the plurality of switching elements.
  9. The plurality of switching elements constitute an integrated circuit,
    The power switching element according to any one of claims 1 to 8, wherein the integrated circuit and the conduction control terminal are electrically connected without a resistor as a discrete component. Drive device.
  10. The plurality of switching elements constitute an integrated circuit,
    The drive of a power switching element according to claim 1, wherein the integrated circuit and the conduction control terminal are electrically connected via a resistor as a discrete component. apparatus.
  11. In the drive device for the power switching element that drives the power switching element by charging / discharging the conduction control terminal of the voltage control type power switching element,
    At least one of a charging path for charging the electric charge and a discharging path for discharging the electric charge includes an electric path connecting the conduction control terminal and an integrated circuit, and the integrated circuit, and the integrated circuit Has a function of changing the resistance value of at least one of the electric paths.
JP2009134687A 2009-06-04 2009-06-04 Driving device for power-switching element Pending JP2010283973A (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103064303A (en) * 2011-10-18 2013-04-24 富士电机株式会社 Control apparatus for switching device
JP2013118756A (en) * 2011-12-02 2013-06-13 Aisin Seiki Co Ltd Driving device of power switching element
CN103208908A (en) * 2012-01-12 2013-07-17 株式会社电装 Driver for switching element and control system for rotary machine using the same
JP2013143881A (en) * 2012-01-12 2013-07-22 Denso Corp Circuit for driving switching element
JP2013165613A (en) * 2012-02-13 2013-08-22 Denso Corp Driving device for reverse conducting switching element
JP2013183600A (en) * 2012-03-05 2013-09-12 Denso Corp Drive unit for switching element
JP2014045598A (en) * 2012-08-28 2014-03-13 Denso Corp Drive circuit of switching element to be driven
WO2015146038A1 (en) * 2014-03-27 2015-10-01 株式会社デンソー Drive device
WO2019187724A1 (en) * 2018-03-29 2019-10-03 ダイキン工業株式会社 Semiconductor device

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9184743B2 (en) 2011-10-18 2015-11-10 Fuji Electric Co., Ltd. Control apparatus for switching device
EP2584702A3 (en) * 2011-10-18 2014-10-15 Fuji Electric Co., Ltd. Control apparatus for switching device
CN103064303A (en) * 2011-10-18 2013-04-24 富士电机株式会社 Control apparatus for switching device
CN103064303B (en) * 2011-10-18 2017-09-15 富士电机株式会社 Control device for switching device
JP2013118756A (en) * 2011-12-02 2013-06-13 Aisin Seiki Co Ltd Driving device of power switching element
JP2013143881A (en) * 2012-01-12 2013-07-22 Denso Corp Circuit for driving switching element
JP2013143882A (en) * 2012-01-12 2013-07-22 Denso Corp Circuit for driving switching element
US8841870B2 (en) 2012-01-12 2014-09-23 Denso Corporation Driver for switching element and control system for rotary machine using the same
CN103208908A (en) * 2012-01-12 2013-07-17 株式会社电装 Driver for switching element and control system for rotary machine using the same
US8723561B2 (en) 2012-01-12 2014-05-13 Denso Corporation Drive circuit for switching element
JP2013165613A (en) * 2012-02-13 2013-08-22 Denso Corp Driving device for reverse conducting switching element
JP2013183600A (en) * 2012-03-05 2013-09-12 Denso Corp Drive unit for switching element
JP2014045598A (en) * 2012-08-28 2014-03-13 Denso Corp Drive circuit of switching element to be driven
WO2015146038A1 (en) * 2014-03-27 2015-10-01 株式会社デンソー Drive device
JP2015195700A (en) * 2014-03-27 2015-11-05 株式会社デンソー Driving device
US9800237B2 (en) 2014-03-27 2017-10-24 Denso Corporation Drive device
WO2019187724A1 (en) * 2018-03-29 2019-10-03 ダイキン工業株式会社 Semiconductor device

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