JP2019138702A - Semiconductor inspection device - Google Patents

Abstract

To provide a technique with which it is possible to perform electrical test on various types of semiconductor chips by a common semiconductor inspection device.SOLUTION: A semiconductor inspection device of the present invention comprises a laminate substrate, a plurality of probe pins, and a drive mechanism. The laminate substrate includes a first electrode layer, and a second electrode layer laminated on the top surface of the first electrode layer via an insulating layer. The plurality of probe pins project from the underside of the laminate substrate penetrating through the laminate substrate, capable of moving between a first, a second and a third position along the vertical direction, and capable of rotating around their axis between a first and a second angle. The drive mechanism moves each of the plurality of probe pins along the vertical direction and rotates them around their axis independently of each other. Each of the plurality of probe pins has electrical continuity to the first electrode layer when it is at the first angle at the first position, and has electrical continuity to the second electrode layer when it is at the second angle at the second position. The third position is above the first and the second positions.SELECTED DRAWING: Figure 3

Description

  The technology disclosed in this specification relates to a semiconductor inspection apparatus.

  Patent Document 1 discloses a semiconductor inspection apparatus that performs an electrical test of a semiconductor chip. The apparatus includes a substrate and a plurality of probe pins protruding from the lower surface of the substrate. When an electrical test is performed using this apparatus, a plurality of probe pins are brought into contact with a plurality of electrodes provided on the surface of the semiconductor chip. Then, an electric test is performed on the semiconductor chip by passing a current through the semiconductor chip via the plurality of probe pins.

JP 2011-029512 A

  Since there are various types of semiconductor chips to be inspected, the chip size and electrode arrangement of the semiconductor chips are different. For this reason, in the technique of Patent Document 1, in order to perform an electrical test on each semiconductor chip, a semiconductor inspection apparatus having probe pins corresponding to the chip size and electrode arrangement of the semiconductor chip to be inspected is required. That is, a different semiconductor inspection apparatus is required for each type of semiconductor chip to be inspected.

  In addition, the plurality of electrodes provided on the semiconductor chip may be formed of different materials or have different thicknesses. In such a case, in the technique of Patent Document 1, in order to uniformly contact a plurality of probe pins to a plurality of electrodes, the probe pins are brought into contact with an electrode formed of a soft material or a thin electrode. In some cases, the probe pins may not pass through these electrodes to properly conduct electrical tests.

  The present specification provides a technique capable of performing electrical tests on various types of semiconductor chips using a common semiconductor inspection apparatus.

  The semiconductor inspection apparatus disclosed in this specification performs an electrical test of a semiconductor chip. The semiconductor inspection apparatus includes a laminated substrate, a plurality of probe pins, and a drive mechanism. The laminated substrate includes a first electrode layer and a second electrode layer laminated on the upper surface of the first electrode layer via an insulating layer. The plurality of probe pins project from the bottom surface of the multilayer substrate through the multilayer substrate, and are movable between a first position, a second position, and a third position along the vertical direction, and around the axis It can be rotated between a first angle and a second angle. The drive mechanism independently moves each of the plurality of probe pins along the vertical direction and rotates around the axis. Each of the plurality of probe pins is electrically connected to the first electrode layer when it is at the first angle at the first position, and is connected to the second electrode layer when it is at the second angle at the second position. Conduct. The third position is a position above the first position and the second position.

  In the semiconductor inspection apparatus described above, the drive mechanism independently moves each of the plurality of probe pins along the vertical direction and rotates it about its axis. Each of the plurality of probe pins is movable between the first position, the second position, and the third position, and is electrically connected to the first electrode layer when the probe pin is at the first angle at the first position, Conduction with the second electrode layer is at the second angle at two positions. The third position is located above the first position and the second position.

  When performing an electrical test of a predetermined semiconductor chip having a plurality of electrodes on the surface, the drive mechanism moves the probe pin corresponding to the position where the electrode is disposed to the first position or the second position. The probe pin corresponding to the position where the electrode is not arranged is moved to the third position. The probe pin at the first position or the second position is electrically connected to the electrode layer by rotating it at a predetermined angle, and contacts an electrode provided on the semiconductor chip when performing an electrical test. On the other hand, since the third position is a position above the first position and the second position, the probe pin at the third position does not contact the semiconductor chip. In this way, only the probe pins corresponding to the chip size and electrode arrangement of the semiconductor chip to be inspected can be moved to a position in contact with the electrode.

  Further, the drive mechanism selects the electrode layer that conducts the probe pin according to the material and thickness of the electrode with which the probe pin is brought into contact, so that the probe pin is moved at different positions along the vertical direction (first position or second position). ). For this reason, said semiconductor inspection apparatus can change the contact pressure of the probe pin with respect to an electrode according to the material and thickness of an electrode.

  As described above, according to the above configuration, various types of semiconductor chips can be electrically tested by a common semiconductor test apparatus.

The top view of the semiconductor chip 10 which is an example of a test object. The side view of the semiconductor inspection apparatus 20 with which the semiconductor chip 10 was installed. The perspective view of the probe socket 34. FIG. The top view of the probe socket 34. FIG. The figure for demonstrating a mode that the probe contact part 42 and each polar layer contact part are made into conduction. FIG. 3 is a perspective view showing a state where each probe pin 32 is in contact with each electrode 14, 16 of the semiconductor chip 10. FIG. 7 is an explanatory diagram corresponding to FIG. 6, illustrating a position of a probe pin 32 that is in contact with the semiconductor chip 10. FIG. 3 is a perspective view showing a state in which each probe pin 32 is in contact with electrodes 114 and 116 of a semiconductor chip 100 different from the semiconductor chip 10. FIG. 9 is an explanatory diagram corresponding to FIG. 8, illustrating a position of a probe pin 32 that is in contact with a semiconductor chip 100.

  FIG. 1 is a plan view of a semiconductor chip 10 to be inspected by a semiconductor inspection apparatus 20 (hereinafter simply referred to as an inspection apparatus 20) according to an embodiment. The semiconductor chip 10 includes a semiconductor layer 12, a plurality of surface electrodes 14, a plurality of signal electrodes 16, and a protective film 18. The semiconductor layer 12 is made of, for example, a semiconductor whose main component is Si (silicon). In this embodiment, the semiconductor layer 12 is formed with an IGBT (Insulated Gate Bipolar Transistor). Although not shown, a back electrode (that is, a collector electrode) is provided on the lower surface of the semiconductor layer 12.

  A surface electrode 14 is formed on the surface of the semiconductor layer 12. The surface electrode 14 is constituted by, for example, a metal layer containing AlSi (aluminum silicon) and a plating layer (for example, nickel) provided on the surface thereof. In the present embodiment, the two surface electrodes 14 are arranged in the center of the semiconductor layer 12. In this embodiment, the surface electrode 14 functions as an emitter electrode.

  Next to the surface electrode 14, a plurality of signal electrodes 16 are formed. Each signal electrode 16 is made of, for example, a metal containing Al (aluminum). In the present embodiment, four signal electrodes 16 are arranged in a line along the outer peripheral edge of the semiconductor layer 12. For example, each signal electrode 16 outputs a voltage indicating the temperature of the semiconductor chip 10, outputs a voltage indicating a current value flowing through the semiconductor chip 10, and serves as a gate pad of the semiconductor chip 10. .

  The protective film 18 is made of an insulating material. The protective film 18 covers a range of the upper surface of the semiconductor layer 12 that is not covered by the surface electrode 14 and the signal electrode 16.

  As shown in FIGS. 2 and 3, the inspection device 20 includes a stage 22, a laminated substrate 24, a plurality of probe pins 32, a plurality of probe sockets 34, a drive mechanism 48, and an energization device 50.

  The stage 22 is made of a conductive material. A semiconductor chip 10 to be inspected is placed on the stage 22.

  The laminated substrate 24 includes a first electrode layer 26, a second electrode layer 28, and a plurality of insulating layers 30. The second electrode layer 28 is stacked on the upper surface of the first electrode layer 26 with the insulating layer 30 interposed therebetween. An insulating layer 30 is disposed on each of the upper surface of the second electrode layer 28 and the lower surface of the first electrode layer 26. That is, the laminated substrate 24 has a multilayer structure in which the insulating layers 30 and the electrode layers 26 and 28 are alternately laminated. The first electrode layer 26 and the second electrode layer 28 are insulated from each other by an insulating layer 30 provided therebetween. The multilayer substrate 24 is provided with a plurality of through holes penetrating from the upper surface to the lower surface.

  The plurality of probe pins 32 penetrate the laminated substrate 24 and protrude from the lower surface of the laminated substrate 24. As will be described later, each probe pin 32 is movable between the first position, the second position, and the third position along the vertical direction. The second position is a position above the first position, and the third position is a position above the second position. Each probe pin 32 can be rotated between a first angle and a second angle around its axis.

  FIG. 3 is a perspective view of the probe socket 34. As shown in FIG. 3, each probe socket 34 includes a housing 36, a rotation member 38, an elastic member 40, a probe contact portion 42, a first electrode layer contact portion 44, and a second electrode layer contact portion 46. And having.

  The housing 36 is made of an insulating material, and houses a rotating member 38, an elastic member 40, a probe contact portion 42, a first electrode layer contact portion 44, and a second electrode layer contact portion 46, which will be described later. The rotating member 38 has a hollow cylindrical shape. The probe pin 32 is inserted and fixed to the rotating member 38. As the rotation member 38 rotates, the probe pins 32 rotate together. The rotating member 38 is made of an insulating material.

  The elastic member 40 is attached to the rotating member 38 and expands and contracts when the rotating member 38 moves in the vertical direction. The elastic member 40 biases the rotating member 38 upward. In this embodiment, the elastic member 40 is a coil spring.

  The probe contact portion 42 is provided inside the housing 36 and outside the rotating member 38. The probe contact portion 42 is made of a conductive material. The probe contact portion 42 is electrically connected to the probe pin 32 inserted into the rotating member 38.

  As shown in FIGS. 3 and 4, the first electrode layer contact portion 44 and the second electrode layer contact portion 46 are at the upper part of the housing 36 and along the inner peripheral surface of the housing 36 in the circumferential direction of the housing 36. They are spaced apart. The first electrode layer contact portion 44 has a first cutout portion 44 a provided from the lower end to the upper end of the first electrode layer contact portion 44. The second electrode layer contact portion 46 has a second notch 46a (see FIG. 5C) provided from the lower end to the upper end of the second electrode layer contact portion 46. The depth of the second notch 46a is deeper than the depth of the first notch 44a. The first electrode layer contact part 44 and the second electrode layer contact part 46 are made of a conductive material. The first electrode layer contact portion 44 is electrically connected to the first electrode layer 26 through a wiring (not shown). The second electrode layer contact portion 46 is electrically connected to the second electrode layer 28 by a wiring (not shown).

  The drive mechanism 48 independently moves each of the probe pins 32 along the vertical direction and rotates it around its axis. Specifically, the drive mechanism 48 moves the rotating member 38 along the vertical direction and rotates around the axis thereof, whereby the probe pin 32 fixed to the rotating member 38 follows and moves. ,Rotate.

  The energization device 50 is configured by a constant voltage power source or a constant current power source. The energization device 50 includes a positive electrode terminal 50a and a negative electrode terminal 50b. The energization device 50 allows a current to flow between the positive terminal 50a and the negative terminal 50b. The positive terminal 50a is connected to the stage 22 by wiring. The positive electrode terminal 50 a is connected to the lower surface of the semiconductor chip 10 through the stage 22. The negative electrode terminal 50b is connected to the electrode layers 26 and 28 by wiring. Therefore, when the probe pin 32 is in contact with the surface electrode 14 or the signal electrode 16 of the semiconductor chip 10, the energization device 50 can pass a current through the semiconductor chip 10 via the probe pin 32. Thereby, an electrical test of the semiconductor chip 10 is performed.

  FIG. 5 shows the operation of the probe pin 32. First, from the state shown in FIG. 3, as shown in FIG. 5A, the drive mechanism 48 pushes the rotating member 38 against the urging force of the elastic member 40 in the direction of the arrow A <b> 1, Rotate to the first angle around the axis in the direction. When the force applied to the rotation member 38 is released in a state where the rotation member 38 is rotated by the first angle, the rotation member 38 biases the elastic member 40 as shown in FIG. To move in the direction of arrow A3. Accordingly, the probe contact portion 42 engages with the first notch portion 44 a of the first electrode layer contact portion 44. As a result, the probe contact portion 42 and the first electrode layer contact portion 44 are electrically connected. As a result, the probe pin 32 inserted into the rotating member 38 is disposed at the first position at the first angle and is electrically connected to the first electrode layer 26. In the above description, the pivot member 38 is pivoted to the second angle around the axis, and the probe contact portion 42 is engaged with the second notch portion 46a of the second electrode layer contact portion 46, so that FIG. As shown in FIG. 5C, the probe pin 32 and the second electrode layer 28 can be made conductive. Further, as shown in FIG. 5D, in a state where the probe contact portion 42 is not engaged with any of the notches 44a and 46a (hereinafter referred to as an initial state), the probe pin 32 is in the third position. It arrange | positions (above 1st position and 2nd position).

  When performing an electrical test on the semiconductor chip 10, the probe pin 32 corresponding to the position of the surface electrode 14 is electrically connected to the first electrode layer 26 by driving to the first angle at the first position. Further, the probe pin 32 corresponding to the position of the signal electrode 16 is driven to the second angle at the second position, thereby conducting to the second electrode layer 28. In addition, the probe pin 32 corresponding to the position where each electrode 14, 16 is not disposed (the range covered with the protective film 18) remains in the initial state (the third position), and any of the electrode layers 26, 28. Also do not conduct. With the probe pins 32 set as described above, the probe pins 32 at the first position and the second position are brought into contact with the corresponding electrodes 14 and 16 as shown in FIG. Specifically, as indicated by black circles and white circles in FIG. 7, the probe pins 32 (black circles) in the first position are in contact with the surface electrodes 14, and the probe pins 32 (white circles) in the second position are each signal. The electrode 16 is contacted. A probe pin 32 indicated by a broken line is at a third position and does not contact the semiconductor chip 10. In this state, an electrical test is performed by passing a current through the semiconductor chip 10 through the probe pin 32 by the energization device 50.

  FIG. 8 shows a state in which the probe pin 32 is in contact with the semiconductor chip 100 having a size smaller than that of the semiconductor chip 10. Here, as indicated by black circles and white circles in FIG. 9, the probe pins 32 (black circles) in the first position are in contact with the surface electrodes 114, and the probe pins 32 (white circles) in the second position are for each signal. The electrode 116 is in contact with the electrode 116. The probe pin 32 indicated by a broken line is at the third position and has a height that does not contact the semiconductor chip 100. In this state, an electrical test is performed by passing a current through the semiconductor chip 100 via the probe pin 32 by the energization device 50.

  As described above, when an electrical test is performed using the inspection apparatus 20, the driving mechanism 48 places the probe pin 32 corresponding to the position where each electrode 14, 16, 114, 116 is disposed in the first position. Alternatively, the probe pin 32 is moved to the second position, and the probe pin 32 corresponding to the position where the electrodes 14, 16, 114, 116 are not arranged is moved to the third position. The probe pin 32 in the first position or the second position is electrically connected to the electrode layers 26 and 28 by rotating to a predetermined angle, and is provided in the semiconductor chips 10 and 100 when performing an electrical test. The electrodes 14, 16, 114, 116 are in contact with each other. On the other hand, since the third position is a position above the first position and the second position, the probe pin 32 at the third position does not contact the semiconductor chips 10 and 100. Thus, only the corresponding probe pin 32 can be moved to a position in contact with each electrode 14, 16, 114, 116 regardless of the chip size or electrode arrangement of the semiconductor chip to be inspected.

  In the semiconductor chip 10, the surface electrode 14 has a plating layer, whereas the signal electrode 16 does not have a plating layer. That is, the signal electrode 16 has lower pressure resistance than the surface electrode 14. For this reason, if the contact pressure of the probe pin 32 with respect to the signal electrode 16 is large, the probe pin 32 may penetrate the signal electrode 16 and an appropriate electrical test may not be performed. However, in the inspection apparatus 20 of the present embodiment, the drive mechanism 48 moves the probe pin 32 at the position corresponding to the surface electrode 14 to the first position, and moves the probe pin 32 at the position corresponding to the signal electrode 16 to the second position. Move to position. Since the second position is an upper position than the first position, when the probe pin 32 is brought into contact with the electrodes 14, 16, the probe with respect to the signal electrode 16 rather than the contact pressure of the probe pin 32 with respect to the surface electrode 14. The contact pressure of the pin 32 can be lowered. Thus, in the inspection apparatus 20 according to the present embodiment, the probe pin 32 is moved to different positions (first position or second position) along the vertical direction in accordance with the material of the electrode with which the probe pin 32 is brought into contact. be able to.

  As described above, according to the inspection apparatus 20, it is possible to perform electrical tests on various semiconductor chips regardless of the chip size and electrode arrangement of the semiconductor chip to be inspected.

  In the embodiment described above, the laminated substrate 24 has the two electrode layers 26 and 28. However, the laminated substrate 24 may have three or more electrode layers. And each probe pin 32 may be comprised so that it may be arrange | positioned in the height (position different from a 1st position, a 2nd position, and a 3rd position) according to the electrode layer to conduct | electrically_connect. In such a configuration, the contact pressure of the probe pin 32 with respect to each electrode can be finely adjusted according to the material and thickness of each electrode provided on the semiconductor chip.

  Specific examples of the present invention have been described in detail above, but these are merely examples and do not limit the scope of the claims. The technology described in the claims includes various modifications and changes of the specific examples illustrated above. The technical elements described in this specification or the drawings exhibit technical usefulness alone or in various combinations, and are not limited to the combinations described in the claims at the time of filing. In addition, the technology illustrated in the present specification or the drawings achieves a plurality of objects at the same time, and has technical utility by achieving one of the objects.

10: Semiconductor chip 12: Semiconductor layer 14: Surface electrode 16: Signal electrode 18: Protective film 20: Semiconductor inspection device 22: Stage 24: Laminated substrate 26: First electrode layer 28: Second electrode layer 30: Insulating layer 32 : Probe pin 34: probe socket 36: housing 38: rotating member 40: elastic member 42: probe contact portion 44: first electrode layer contact portion 44 a: first notch portion 46: second electrode layer contact portion 46 a: second 2 notch 48: drive mechanism 50: energization device

Claims (1)

A semiconductor inspection apparatus for conducting an electrical test of a semiconductor chip,
A laminated substrate comprising: a first electrode layer; and a second electrode layer laminated on an upper surface of the first electrode layer via an insulating layer;
It penetrates the laminated substrate and protrudes from the lower surface of the laminated substrate, and is movable between the first position, the second position and the third position along the vertical direction, and the first angle and the second angle around the axis. A plurality of probe pins rotatable between
A drive mechanism for independently moving each of the plurality of probe pins along the vertical direction and rotating about the axis;
With
Each of the plurality of probe pins is electrically connected to the first electrode layer when it is at the first angle at the first position, and is connected to the second electrode layer when it is at the second angle at the second position. Conducting,
The third position is an upper position than the first position and the second position.
Semiconductor inspection equipment.

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