JP2019131859A - Vapor deposition device and vapor deposition method - Google Patents

Abstract

To control vapor deposition speed in high accuracy for a long period of time by suppressing vapor deposition speed deviation, which is detected by a plurality of crystal resonators, in a film thickness sensor with multiple crystal resonators.SOLUTION: In the vapor deposition device, a vapor deposition source is provided in a vacuum chamber. A film thickness measuring device has a film thickness sensor including the plurality of resonators facing the vapor deposition source. The film thickness measuring device detects vapor deposition speed of a vapor deposition material by any crystal resonator selected from the film sensor. The film thickness measuring device sets a tooling coefficient for correcting an error between a vapor deposition speed of the vapor deposition material formed on a substrate and the vapor deposition speed of the vapor deposition material formed on the resonator, which is given by arrangement position of the substrate and the film thickness with reference to the vapor deposition source. A control device controls a film thickness of the vapor deposition material formed on the substrate based on the vapor deposition speed detected by the crystal resonator.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a vapor deposition apparatus and a vapor deposition method.

  In an organic EL display or the like typified by a thin display device, the pixel has a multilayer structure. In such a device, in order to increase the light extraction efficiency in each pixel, it is important how to accurately control the thickness of each layer of the multilayer structure.

  For example, since each layer is made of organic molecules, it is formed by vacuum deposition, and the thickness is often controlled by a film thickness sensor using a crystal resonator. In particular, recently, when the rate value from the crystal unit fluctuates, a deposition method that can adjust the vapor deposition rate (vapor amount) to a desired film thickness and obtain the desired film thickness is provided. (For example, refer to Patent Document 1).

JP 2014-070227 A

  However, in the film formation method described above, a change in the rate value due to the disturbance of the crystal resonator is detected based on the fluctuation of the rate value from one crystal resonator and the heating power from the power sensor. The tooling factor of the crystal unit is changed based on the output.

  In such a method, in a vapor deposition apparatus equipped with a film thickness sensor having a plurality of crystal resonators, when the characteristics of the plurality of crystal resonators vary slightly, the deposition rate is controlled with high accuracy over a long period of time. Can not.

  In view of the circumstances as described above, the object of the present invention is to provide a film thickness sensor having a plurality of crystal resonators, in which variations in the deposition rate detected by the plurality of crystal resonators are suppressed, and the deposition rate can be maintained for a long time. An object of the present invention is to provide a vapor deposition apparatus and a vapor deposition method which are controlled with high accuracy.

In order to achieve the above object, a vapor deposition apparatus according to an embodiment of the present invention includes a vacuum vessel, a vapor deposition source, a film thickness measuring instrument, and a control device.
The vapor deposition source is provided in the vacuum container.
The film thickness measuring device has a film thickness sensor including a plurality of crystal resonators facing the vapor deposition source. The film thickness measuring device can detect the vapor deposition rate of the vapor deposition material by any one of the quartz oscillators selected from the film thickness sensors. The film thickness measuring device includes a deposition rate of a deposition material formed on the substrate and a deposition rate of the deposition material formed on the quartz resonator, which are generated depending on an arrangement position of the substrate and the thickness sensor relative to the deposition source. Can be set for each of the plurality of crystal resonators.
The control device controls the film thickness of the vapor deposition material formed on the substrate based on the vapor deposition rate detected by the crystal resonator.
The control device
(A) selecting a first crystal resonator from the film thickness sensor, and controlling the film thickness of the vapor deposition material formed on the substrate based on a vapor deposition rate detected by the first crystal resonator. When,
(B) If the deposition rate is continuously detected by the first crystal unit, and the detection time of the first crystal unit or the resonance frequency of the first crystal unit exceeds an allowable range, the film thickness is increased. Selecting a second crystal resonator from the sensor;
(C) When the difference between the deposition rate detected by the first crystal unit and the deposition rate detected by the second crystal unit is not a target value, the tooling coefficient of the second crystal unit Correcting the above difference to the target value,
(D) The second crystal resonator is regarded as a first crystal resonator, and the film thickness of the vapor deposition material formed on the substrate is controlled based on the vapor deposition rate detected by the first crystal resonator. Steps,
(E) The above steps (b) to (d) are repeated.

  With such a vapor deposition apparatus, even if a film thickness sensor including a plurality of crystal resonators is used, variations in the evaporation rate caused by the characteristics of each crystal resonator of the plurality of crystal resonators can be suppressed. With each of the quartz oscillators, the deposition amount of the deposition source can be controlled with high accuracy over a long period of time.

In the above vapor deposition method, in the step (c), the vapor deposition rate detected by the first crystal resonator is an average value of the vapor deposition rate in a first time zone before the end of use of the first crystal resonator. The vapor deposition rate detected by the second crystal resonator may be an average value of the vapor deposition rates in a second time zone after the start of use of the second crystal resonator.
Vapor deposition equipment.

  With such a vapor deposition apparatus, the vapor deposition rate is corrected immediately after the start of use of the second crystal resonator based on the vapor deposition rate immediately before the end of use of the first crystal resonator. The deposition amount of the deposition source can be controlled continuously.

In order to achieve the above object, a vapor deposition method according to an aspect of the present invention selects any one of crystal resonators from a film thickness sensor including a plurality of crystal resonators, and provides a vapor deposition material formed on the crystal resonator. By detecting the deposition rate, the film thickness of the deposition material formed on the substrate is controlled, and the deposition rate of the deposition material formed on the substrate generated by the position of the substrate and the film thickness sensor with respect to the deposition source. And the film thickness sensor capable of setting a tooling coefficient for correcting the error between the vapor deposition material formed on the crystal resonator and the vapor deposition rate for each of the plurality of crystal resonators.
The above evaporation method is
(A) selecting a first crystal resonator from the film thickness sensor, and controlling the film thickness of the vapor deposition material formed on the substrate based on a vapor deposition rate detected by the first crystal resonator. When,
(B) If the deposition rate is continuously detected by the first crystal unit, and the detection time of the first crystal unit or the resonance frequency of the first crystal unit exceeds an allowable range, the film thickness is increased. Selecting a second crystal resonator from the sensor;
(C) When the difference between the deposition rate detected by the first crystal unit and the deposition rate detected by the second crystal unit is not a target value, the tooling coefficient of the second crystal unit Correcting the above difference to the target value,
(D) The second crystal resonator is regarded as a first crystal resonator, and the film thickness of the vapor deposition material formed on the substrate is controlled based on the vapor deposition rate detected by the first crystal resonator. Steps,
(E) The above steps (b) to (d) are repeated.

  With such a vapor deposition method, even if a film thickness sensor including a plurality of crystal resonators is used, variation in the evaporation rate caused by the characteristics of each crystal resonator of the plurality of crystal resonators can be suppressed. With each of the quartz oscillators, the deposition amount of the deposition source can be controlled with high accuracy over a long period of time.

  In the above vapor deposition method, in the step (c), the vapor deposition rate detected by the first crystal unit is an average value of the vapor deposition rate in a first time zone before the use of the first crystal unit. The vapor deposition rate detected by the second crystal resonator may be an average value of the vapor deposition rates in a second time zone after the start of use of the second crystal resonator.

  With such a deposition method, the deposition rate immediately after the start of use of the second crystal unit is corrected based on the deposition rate immediately before the end of use of the first crystal unit. The deposition amount of the deposition source can be controlled continuously.

  As described above, according to the present invention, in the film thickness sensor having a plurality of crystal resonators, variations in the deposition rate detected by the plurality of crystal resonators are suppressed, and the deposition rate is highly accurate over a long period of time. A vapor deposition apparatus and a vapor deposition method are provided.

Drawing (a) and a figure (b) are schematic sectional views of a vapor deposition device concerning this embodiment. FIG. (C) is a schematic perspective view of the film thickness sensor installed in the vapor deposition apparatus according to the present embodiment. It is a block block diagram of the vapor deposition apparatus which concerns on this embodiment. It is a graph which shows the outline | summary of the vapor deposition method which concerns on this embodiment. It is a graph which shows the effect | action of the vapor deposition method which concerns on this embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In each drawing, XYZ axis coordinates may be introduced.

  FIG. 1A and FIG. 1B are schematic cross-sectional views of a vapor deposition apparatus according to this embodiment. FIG.1 (c) is a schematic perspective view of the film thickness sensor installed in the vapor deposition apparatus which concerns on this embodiment. When FIG. 1A is a front view, FIG. 1B corresponds to a side view.

  The vapor deposition apparatus 1 includes a vacuum vessel 10, a vapor deposition source 20, a substrate transport mechanism 30, a film thickness measuring device 40, a temperature sensor 50, and a control device 60. In the vapor deposition apparatus 1, the vapor deposition material 20 m is vapor deposited on the substrate 90 while changing the relative position between the substrate 90 and the vapor deposition source 20 in the X-axis direction. FIGS. 1A and 1B illustrate a vapor deposition apparatus in which the vapor deposition source 20 is fixed and the substrate 90 moves in the X-axis direction above the vapor deposition source 20.

  The vacuum vessel 10 is a vessel that can maintain a reduced pressure state. The vacuum vessel 10 is provided with an exhaust system that exhausts the gas in the vacuum vessel 10. The vacuum container 10 may be provided with a gas supply mechanism that can supply gas from outside the vacuum container 10 into the vacuum container 10. The shape when the vacuum vessel 10 is cut along the XY plane is, for example, a rectangular shape.

  The vapor deposition source 20 is provided in the vacuum container 10. The vapor deposition source 20 is provided in the bottom part in the vacuum vessel 10, or the bottom part vicinity, for example. The vapor deposition source 20 includes a plurality of vapor deposition sources 20s. Each of the plurality of vapor deposition sources 20s is arranged in a direction that intersects the direction in which the substrate 90 moves (for example, a direction that is orthogonal). The vapor deposition source 20 is a so-called linear source type vapor deposition source.

  Each of the plurality of vapor deposition sources 20s accommodates a vapor deposition material 20m. Each of the plurality of vapor deposition sources 20s is provided with a heating device (not shown) and is heated by an AC voltage supplied from the outside. The heating device is, for example, an induction heating device or a resistance heating device. When each of the plurality of evaporation sources 20s is heated, the evaporation material 20m evaporates from each of the plurality of evaporation sources 20s toward the substrate 90. The vapor deposition material 20m is, for example, an organic material that constitutes a light emitting layer and a carrier transport layer of an organic EL element. The vapor deposition material 20m is not limited to an organic material, and may be an inorganic material, a metal, or the like.

  The substrate transport mechanism 30 is provided on the vapor deposition source 20. The substrate transport mechanism 30 transports the substrate 90 and the substrate holder 91 in the vacuum container 10 while the substrate 90 is held by the substrate holder 91. The substrate transport mechanism 30 is provided with a roll mechanism (not shown) on the substrate 90 side. For example, the substrate transport mechanism 30 transports the substrate 90 and the substrate holder 91 in a direction orthogonal to the direction in which the plurality of vapor deposition sources 20s are arranged.

  When the vapor deposition material 20m evaporates from each of the plurality of vapor deposition sources 20s toward the substrate 90, the evaporation substance adheres to the film formation target surface 90d of the substrate 90, and a thin film having a desired thickness is formed on the substrate 90. Further, by performing evaporation on the film formation target surface 90d while moving the substrate 90 at a constant speed, local film formation on the film formation target surface 90d is suppressed, and a thin film having a uniform thickness is formed on the film formation target surface 90d. It is formed.

  The film thickness measuring device 40 includes a film thickness sensor 41 and a film thickness sensor 42. The film thickness sensors 41 and 42 measure the amount of the vapor deposition material 20 m from the vapor deposition source 20 and control the thickness (or vapor deposition rate) of the thin film formed on the substrate 90. The film thickness sensors 41 and 42 face the vapor deposition source 20. However, the film thickness sensors 41 and 42 are arranged so as not to prevent the vapor deposition material 20m from reaching the substrate 90. For example, the film thickness sensors 41 and 42 are not disposed between the vapor deposition source 20 and the substrate 90. In the vapor deposition apparatus 1, the geometric positions of the film thickness sensors 41 and 42 with respect to the vapor deposition source 20 are fixed. Outputs of the film thickness sensors 41 and 42 are input to the control device 60.

  Here, the film thickness sensor 41 is used as a sensor for actual measurement. The film thickness sensor 42 may be used as an alternative spare sensor that corrects the evaporation amount of the vapor deposition material 20 m emitted from the vapor deposition source 20 instead of the film thickness sensor 41. The film thickness sensor 42 may be removed from the vapor deposition apparatus 1.

  The film thickness sensor 41 includes a main body 41b, a plurality of crystal resonators 41c, and a rotary shutter 41s (FIG. 1C). The film thickness sensor 41 is, for example, a multisensor including 12 crystal resonators 41c. The number of crystal resonators 41c included in the film thickness sensor 41 is not limited to twelve.

  The shutter 41s is provided with an opening 41h through which any one of the plurality of crystal resonators 41c is exposed. An arbitrary crystal resonator 41c is exposed and selected from the film thickness sensor 41 by the rotation of the shutter 41s. In the film thickness sensor 41, the vapor deposition rate of the vapor deposition material 20m formed on each crystal resonator 41c can be detected by an arbitrary crystal resonator 41c selected from the film thickness sensors 41.

  The film thickness sensor 42 includes a main body 42b, a reference crystal resonator 42c, and a shutter 42s. The film thickness sensor 42 can detect the vapor deposition rate of the vapor deposition material 20m formed on the crystal resonator 42c.

  Further, in the film thickness measuring device 40, the vapor deposition rate of the vapor deposition material 20m formed on the substrate 90 and a plurality of crystal vibrations depending on the arrangement position (geometric position) of the substrate 90 and the film thickness sensor 41 with respect to the vapor deposition source 20. If an error occurs in the vapor deposition rate of the vapor deposition material 20m formed on each of the elements 41c, a tooling coefficient (T Factor (TF)) for correcting this error is set for each of the plurality of crystal resonators 41c. It is possible.

  The temperature sensor 50 is installed in each of the plurality of vapor deposition sources 20s. The temperature sensor 50 measures the temperature with a thermocouple, for example. The temperature sensor 50 is connected to the control device 60. You may remove the temperature sensor 50 from the vapor deposition apparatus 1 suitably.

  The control device 60 adjusts the power (AC voltage) supplied to the heating device provided in the vapor deposition source 20 based on the measurement results of the film thickness measuring instrument 40 and the temperature sensor 50, and sets the vapor deposition source 20 to a desired temperature. To adjust the amount of the vapor deposition material 20m to a desired value.

  FIG. 2A and FIG. 2B are block configuration diagrams of the vapor deposition apparatus according to this embodiment. Here, SV in the figure is a setting signal, SP is a target signal, MV is a control signal, and PV is a measurement signal.

  In the vapor deposition apparatus 1, an arbitrary crystal resonator 41 c is selected from the film thickness sensor 41 of the film thickness measuring device 40 and formed on the substrate 90 by detecting the vapor deposition rate of the vapor deposition material 20 m formed on the crystal resonator 41 c. The film thickness of the deposited vapor deposition material 20m is controlled.

  For example, FIG. 2A shows an example in which the temperature sensor 50 is not used. In this case, when a desired vapor deposition rate (SV) is set in the vapor deposition apparatus 1 by the user, the difference between the vapor deposition rate (SV) and the vapor deposition rate (PV) detected by the crystal unit 41c is within the target value. The control signal (MV) is sent to the AC power supply so as to fall within the range. As a result, the user can deposit the deposition material 20m on the substrate 90 at a desired deposition rate. This control is performed by, for example, PID (Proportional Integral Differential) control.

  The vapor deposition rate (PV) detected by the crystal unit 41c is averaged by a speed filter. The PID control and management of the film thickness measuring device 40 are collectively performed by the control device 60.

  On the other hand, the film thickness of the vapor deposition material 20m formed on the substrate 90 can also be controlled by using the temperature sensor 50 and managing the temperature of the vapor deposition source 20. For example, as shown in FIG. 2B, the difference between the vapor deposition rate (SV) and the vapor deposition rate (PV) is converted in advance as a temperature difference. Then, a control signal (MV) is sent to the AC power supply so that the temperature (PV) detected by the temperature sensor 50 becomes a desired temperature so that the temperature difference falls within the target value. As a result, the user can deposit the deposition material 20m on the substrate 90 at a desired deposition rate.

  In particular, when using a vapor deposition source having a large heat capacity, such as the linear source type vapor deposition source 20, a method of directly detecting the evaporation amount of the vapor deposition source 20 and controlling the vapor deposition rate (FIG. 2A). However, the method of detecting the temperature of the vapor deposition source 20 and controlling the vapor deposition rate (FIG. 2 (b)) suppresses the excessive phenomenon of the evaporation amount and allows more accurate film thickness control.

  However, the film thickness sensor 41 includes a plurality of crystal resonators 41c. When the characteristics of each of the plurality of crystal resonators 41c vary slightly, the vapor deposition rates detected by each of the plurality of crystal resonators 41c exhibit the same value even if the evaporation amount of the vapor deposition material 20m is constant. Is not limited. For example, when the surface states (for example, polished state) and thicknesses of the plurality of crystal resonators 41c are different, the vapor deposition rates detected by the plurality of crystal resonators 41c are different. In particular, as the deposition rate decreases (for example, 0.01 nm / second to several tens of nm / second), the variation in the deposition rate becomes more significant.

  Thereby, even if the control shown in FIGS. 2A and 2B is attempted, the vapor deposition rate (PV) signal used in the PID control varies for each crystal resonator, and the vapor deposition formed on the substrate 90 is performed. The vapor deposition rate of the material 20m varies for each crystal resonator.

  Under such circumstances, in the vapor deposition apparatus 1, the vapor deposition rate of the vapor deposition material 20 m formed on the substrate 90 is changed to each quartz crystal by the following vapor deposition method without causing the vapor deposition rate (PV) signal to vary for each crystal resonator. It is controlled with high accuracy using a vibrator. This method is automatically performed by the control device 60. For example, the control device 60 selects one of the crystal resonators 41c from the film thickness sensor 41 including the plurality of crystal resonators 41c. The film thickness of the vapor deposition material 20m formed on the substrate 90 is controlled by detecting the vapor deposition rate of the vapor deposition material 20m formed on the crystal oscillator 41c.

FIG. 3 is a graph showing an outline of the vapor deposition method according to the present embodiment.
The upper part of FIG. 3 shows the relationship between time and the deposition rate of the thin film formed on the substrate 90. The lower part of FIG. 3 shows the relationship between time and the deposition rate of the thin film measured by the film thickness sensor 41. The upper and lower time scales are the same. Moreover, the vapor deposition rate when the crystal oscillator 41c is switched is shown in both the upper and lower stages.

  The control device 60 selects one of the crystal resonators 41c-1 (first crystal resonator) from the film thickness sensor 41, and based on the vapor deposition rate detected by the crystal resonator 41c-1 selected first. Then, the film thickness of the vapor deposition material 20m formed on the substrate 90 is controlled (step 10). This section is referred to as section A.

  When the detection of the vapor deposition rate by the crystal unit 41c-1 in the section A is continued and the detection time or resonance frequency of the crystal unit 41c-1 exceeds the allowable range, the shutter 41s is rotated, and the film thickness sensor In 41, the next crystal oscillator 41c-2 (second crystal oscillator) is selected (step 20).

  However, as the vapor deposition rate data detected by the crystal unit 41c-1 in the section A, the average value of the deposition rate in the first time zone before the end of using the crystal unit 41c-1 is acquired. . For example, the first time period is set to 60 seconds after going back to 70 seconds before the end of use of the crystal unit 41c-1.

  Next, immediately after switching from the crystal resonator 41c-1 to the crystal resonator 41c-2, a preliminary time (standby time) is provided until the vapor deposition rate displayed by the crystal resonator 41c-2 is stabilized. In the preliminary time, the display of the deposition rate by the crystal unit 41c-2 may be hidden.

  Next, after the preliminary time has elapsed, the display of the deposition rate by the crystal resonator 41c-2 is started. Subsequently, the average value of the deposition rate by the crystal resonator 41c-2 is acquired in the second time period after the display by the crystal resonator 41c-2 is started. For example, the second time period is set to 60 seconds after 10 seconds have elapsed since the preliminary time after the start of use of the crystal unit 41c-2 has passed.

  Next, when the difference d1 between the vapor deposition rate (average value) detected by the crystal resonator 41c-1 and the vapor deposition rate (average value) detected by the crystal resonator 41c-2 is not the target value, the crystal The tooling coefficient of the vibrator 41c-2 is corrected (T correction), and the difference d1 is set to the target value (step 30). The target value is, for example, “0”.

  Next, the film thickness of the vapor deposition material 20m formed on the substrate 90 is controlled based on the vapor deposition rate detected by the crystal resonator 41c-2 whose tooling coefficient has been corrected (step 40). This section is defined as section C.

  Next, the crystal resonator 41c-2 is regarded as the crystal resonator 41c-1, and the steps 20 to 40 are repeated again, so that all of the crystal resonators 41c other than the crystal resonators 41c-1 and 41c-2 are tooled. The coefficient is corrected as appropriate.

  In the section B between the sections A and C, the film thickness of the vapor deposition material 20m formed on the substrate 90 is not controlled by using the crystal unit 41c. In the B section, the temperature of the vapor deposition source 20 just before the end of the A section is maintained. This requires a preparatory time during which the operation of the crystal unit 41c-2 is stabilized and T correction in the B section, and the evaporation material 20m formed on the substrate 90 using the crystal unit 41c-2 in this section. This is because the film thickness cannot be controlled with high accuracy.

  However, since the B section is a short time that is the sum of the preliminary time of the crystal unit 41c-2 and the time required for T correction, by maintaining the temperature of the vapor deposition source 20 just before the end of the A section, The film thickness of the vapor deposition material 20m formed on the substrate 90 is controlled with high accuracy.

  With such a vapor deposition method, even if a film thickness sensor 41 including a plurality of crystal resonators 41c is used, variations in the evaporation rate caused by the characteristics of the plurality of crystal resonators 41c can be suppressed. The amount of vapor deposition of the vapor deposition source 20 can be controlled with high accuracy over a long time by each of the vibrators 41c.

  In particular, in the present embodiment, since the deposition rate immediately after the start of use of the crystal unit 41c-2 to be used next is corrected based on the deposition rate immediately before the end of use of the crystal unit 41c-1, a plurality of the crystal units 41c-1 are corrected. The vapor deposition amount of the vapor deposition source 20 can be continuously controlled by the crystal oscillator 41c. This phenomenon will be described below.

  FIG. 4 is a graph showing the operation of the vapor deposition method according to this embodiment.

  For example, it is assumed that the vapor deposition rate at the initial time point 1s detected by the crystal resonator 41c-1 is 10 nm / s. At this time, the vapor deposition rate on the substrate 90 is also assumed to be 10 nm / s. However, if vapor deposition of the vapor deposition material 20m on the substrate 90 is continued while supplying the same electric power to the vapor deposition source 20, the evaporation amount from the vapor deposition source 20 may fluctuate with time. For example, if the amount of the vapor deposition material 20m in the vapor deposition source 20 fluctuates as a result of continuing the vapor deposition, even if the same power is supplied to the vapor deposition source 20, it is charged per unit volume of the vapor deposition material 20m. This is because the power to be changed fluctuates.

  In the present embodiment, the fluctuation of the evaporation amount can be continuously tracked using the plurality of crystal resonators 41c.

  For example, when the deposition rate at the final time point 1e detected by the crystal resonator 41c-1 is changed from 10 nm / s to 11 nm / s, at the initial time point 2s detected by the next crystal resonator 41c-2. The vapor deposition rate is corrected to 11 nm / s by taking over the information of the vapor deposition rate at the end point 1e of the crystal unit 41c-1. Here, the target value is “0”.

  Subsequently, when the deposition rate at the final time point 2e detected by the crystal resonator 41c-2 is changed from 11 nm / s to 12 nm / s, the initial time point 3s detected by the next crystal resonator 41c-3. The vapor deposition rate is corrected to 12 nm / s by taking over the information of the vapor deposition rate at the final time point 2e of the quartz oscillator 41c-2. It is assumed that the electric power supplied to the vapor deposition source 20 is constant from the time 1 s.

  Since such correction is also performed for the crystal resonators 41c selected after the crystal resonator 41c-3, the variation in the evaporation amount can be continuously tracked using the plurality of crystal resonators 41c. .

  For example, if the correction of the third crystal unit 41c-3 is corrected based on the deposition rate other than the last stage 2e of the immediately preceding crystal unit 41c-2, the following problems may occur. For example, if the third crystal unit 41c-3 is corrected based on the vapor deposition rate at the initial time point 1s of the first crystal unit 41c-1, the initial time point 3s of the crystal unit 41c-3. In order to set the “target value” to 0, the deposition rate at 5 is corrected discontinuously from 12 nm / s to 10 nm / s. For this reason, the fluctuation (fluctuation) of the evaporation amount is not reflected in the correction.

  In practice, the electric power supplied to the vapor deposition source 20 is appropriately controlled based on the vapor deposition rate detected by each of the plurality of crystal resonators 41c. Thereby, the vapor deposition rate of the thin film formed on the substrate 90 is controlled to a constant value (in the above example, 10 nm / s from beginning to end) using the plurality of crystal resonators 41c.

  As mentioned above, although embodiment of this invention was described, this invention is not limited only to the above-mentioned embodiment, Of course, a various change can be added. Each embodiment is not necessarily an independent form, and can be combined as much as technically possible.

DESCRIPTION OF SYMBOLS 1 ... Deposition apparatus 10 ... Vacuum container 20, 20s ... Deposition source 20m ... Deposition material 30 ... Substrate conveyance mechanism 40 ... Film thickness measuring device 41, 42 ... Film thickness sensor 41h ... Opening 41s, 42s ... Shutter 41b, 42b ... Main body 41c , 41c-1, 41c-2, 41c-3, 42c ... crystal resonator 50 ... temperature sensor 60 ... control device 90 ... substrate 90d ... film formation target surface 91 ... substrate holder

Claims (4)

A vacuum vessel;
A vapor deposition source provided in the vacuum vessel;
It has a film thickness sensor including a plurality of crystal resonators facing the vapor deposition source, the vapor deposition rate of the vapor deposition material can be detected by any one of the crystal resonators selected from the film thickness sensors, A plurality of tooling coefficients for correcting an error between a deposition rate of a deposition material formed on the substrate and a deposition rate of the deposition material formed on the crystal resonator, which is caused by an arrangement position of the substrate and the film thickness sensor. A film thickness measuring device that can be set for each of the quartz crystal resonators,
A control device for controlling the film thickness of the vapor deposition material formed on the substrate based on the vapor deposition rate detected by the crystal resonator; and
The controller is
(A) selecting a first crystal resonator from the film thickness sensor and controlling the film thickness of the vapor deposition material formed on the substrate based on a deposition rate detected by the first crystal resonator. When,
(B) When the detection of the deposition rate by the first crystal unit is continued and the detection time of the first crystal unit or the resonance frequency of the first crystal unit exceeds an allowable range, the film thickness Selecting a second crystal resonator from the sensor;
(C) When the difference between the deposition rate detected by the first crystal unit and the deposition rate detected by the second crystal unit is not a target value, the tooling coefficient of the second crystal unit Correcting the difference to a target value;
(D) The second crystal resonator is regarded as a first crystal resonator, and the film thickness of the vapor deposition material formed on the substrate is determined based on the vapor deposition rate detected by the regarded first crystal resonator. A step of controlling
(E) A vapor deposition apparatus that repeats the steps (b) to (d). The vapor deposition method according to claim 1,
In step (c),
The deposition rate detected by the first crystal unit is an average value of the deposition rate in a first time zone before the end of use of the first crystal unit,
The vapor deposition rate detected by the second crystal resonator is an average value of the vapor deposition rate in a second time zone after the start of use of the second crystal resonator. The film of the vapor deposition material formed on the substrate by selecting any one of the crystal vibrators from a film thickness sensor including a plurality of crystal vibrators and detecting the vapor deposition rate of the vapor deposition material formed on the crystal vibrator The deposition rate of the vapor deposition material formed on the substrate and the vapor deposition rate of the vapor deposition material formed on the crystal resonator, which are generated by the arrangement position of the substrate and the film thickness sensor with respect to the vapor deposition source, are controlled. An evaporation method using the film thickness sensor capable of setting a tooling coefficient for correcting an error for each of the plurality of crystal resonators,
(A) selecting a first crystal resonator from the film thickness sensor and controlling the film thickness of the vapor deposition material formed on the substrate based on a deposition rate detected by the first crystal resonator. When,
(B) When the detection of the deposition rate by the first crystal unit is continued and the detection time of the first crystal unit or the resonance frequency of the first crystal unit exceeds an allowable range, the film thickness Selecting a second crystal resonator from the sensor;
(C) When the difference between the deposition rate detected by the first crystal unit and the deposition rate detected by the second crystal unit is not a target value, the tooling coefficient of the second crystal unit Correcting the difference to a target value;
(D) The second crystal resonator is regarded as a first crystal resonator, and the film thickness of the vapor deposition material formed on the substrate is determined based on the vapor deposition rate detected by the regarded first crystal resonator. A step of controlling
(E) A vapor deposition method in which steps (b) to (d) are repeated. The vapor deposition method according to claim 3, wherein:
In step (c),
The deposition rate detected by the first crystal unit is an average value of the deposition rate in a first time zone before the end of use of the first crystal unit,
The vapor deposition rate detected by the second crystal resonator is an average value of the vapor deposition rate in a second time zone after the start of use of the second crystal resonator.

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