JP2019114724A - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- 239000010410 layer Substances 0.000 claims abstract description 75
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 50
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- 230000004888 barrier function Effects 0.000 claims abstract description 43
- 239000011229 interlayer Substances 0.000 claims abstract description 24
- 230000004913 activation Effects 0.000 claims abstract description 12
- 239000012535 impurity Substances 0.000 claims description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010936 titanium Substances 0.000 description 79
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 76
- 229910010271 silicon carbide Inorganic materials 0.000 description 74
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 19
- 238000005468 ion implantation Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
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- 238000000137 annealing Methods 0.000 description 5
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- 230000005684 electric field Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
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- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 4
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- 229920005591 polysilicon Polymers 0.000 description 4
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 239000002019 doping agent Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
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- 229910052715 tantalum Inorganic materials 0.000 description 2
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- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
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- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
本発明にかかる半導体装置は、シリコンよりもバンドギャップが広い半導体(以下、ワイドバンドギャップ半導体とする)を用いて構成される。ここでは、ワイドバンドギャップ半導体として例えば炭化珪素(SiC)を用いた半導体装置(炭化珪素半導体装置)の構造を例に説明する。図1は、実施の形態にかかる炭化珪素半導体装置の構造を示す断面である。
次に、実施の形態にかかる半導体装置の製造方法について説明する。図5〜図11は、実施の形態にかかる炭化珪素半導体装置の製造途中の状態を示す断面図である。まず、n+型ドレイン領域となるn+型炭化珪素基板1を用意する。次に、n+型炭化珪素基板1のおもて面に、上述したn-型ドリフト層2をエピタキシャル成長させる。例えば、n-型ドリフト層2を形成するためのエピタキシャル成長の条件を、n-型ドリフト層2の不純物濃度が1×1016/cm3程度となるように設定してもよい。ここまでの状態が図5に記載される。
2、102 n-型ドリフト層
3 第1p+型領域
4 第2p+型領域
4a 下側第2p+型領域
4b 上側第2p+型領域
5 n型領域
5a 下側n型領域
5b 上側n型領域
6、106 p型ベース層
7 n+型ソース領域
8、108 p+型コンタクト領域
9、109 ゲート絶縁膜
10、110 ゲート電極
11、111 層間絶縁膜
12、112 ソース電極
13 バリアメタル
14 TiN膜
15 Ti膜
18 トレンチ
19 ニッケルシリサイド膜
107 n型ソース領域
120 誘電体層
100、200 半導体基体
Claims (6)
- 第1導電型の半導体基板と、
前記半導体基板のおもて面に設けられた、前記半導体基板よりも不純物濃度の低い第1導電型の第1半導体層と、
前記第1半導体層の、前記半導体基板側に対して反対側に設けられた第2導電型の第2半導体層と、
前記第2半導体層の内部に選択的に設けられた、前記半導体基板よりも不純物濃度の高い第1導電型の第1半導体領域と、
前記第1半導体領域と前記第1半導体層とに挟まれた前記第2半導体層の表面上の少なくとも一部にゲート絶縁膜を介して設けられたゲート電極と、
前記ゲート電極上に設けられた層間絶縁膜と、
前記層間絶縁膜上に設けられたバリアメタルと、
を備え、
温度T(K)における、負バイアス温度不安定性が無い保証時間をL(h)としたとき、前記バリアメタルに含まれるTiの面密度tTi1は、kをボルツマン定数、Eaを1.0(eV)<Ea<1.5(eV)を満たす活性化エネルギーとすると、
- 前記バリアメタルは、前記層間絶縁膜の表面と側面に設けられ、前記側面におけるTiの面密度tTi3は、tTi3>tTi1/2またはtTi3>tTi2/2を満たすことを特徴とする請求項1または2に記載の半導体装置。
- 前記第1半導体領域および前記第2半導体層を貫通して前記第1半導体層に達するトレンチと、
前記第1半導体層の内部に選択的に設けられた、第2導電型の第2半導体領域と、
前記第1半導体層の内部に選択的に設けられた、前記トレンチの底面に接する第2導電型の第3半導体領域と、
をさらに備え、
前記ゲート電極は、前記トレンチの内部に前記ゲート絶縁膜を介して設けられることを特徴とする請求項1〜3のいずれか一つに記載の半導体装置。 - 第1導電型の半導体基板のおもて面に、前記半導体基板よりも不純物濃度の低い第1導電型の第1半導体層を形成する第1工程と、
前記第1半導体層の、前記半導体基板側に対して反対側に第2導電型の第2半導体層を形成する第2工程と、
前記第2半導体層の内部に選択的に、前記半導体基板よりも不純物濃度の高い第1導電型の第1半導体領域を形成する第3工程と、
前記第1半導体領域と前記第1半導体層とに挟まれた前記第2半導体層の表面上の少なくとも一部にゲート絶縁膜を介してゲート電極を形成する第4工程と、
前記ゲート電極上に層間絶縁膜を形成する第5工程と、
前記層間絶縁膜上にバリアメタルを形成する第6工程と、
を含み、
前記第6工程では、温度T(K)における、負バイアス温度不安定性が無い保証時間をL(h)としたとき、前記バリアメタルに含まれるTiの面密度tTi1を、kをボルツマン定数、Eaを1.0(eV)<Ea<1.5(eV)を満たす活性化エネルギーとすると、
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