JP2019096676A - Electronic component built-in structure and manufacturing method of electronic component built-in structure - Google Patents

Abstract

To provide an electronic component built-in structure capable of reducing the impact of heat of external electronic component on the electronic component, and to provide a manufacturing method of an electronic component built-in structure.SOLUTION: In an electronic component built-in structure 1, when heat is generated in an external electronic component 50, that heat is transmitted in the order of a second electrode terminal 44, an electronic component 10, and a first electrode terminal 42, and since the heat conductivity of a material composing a second electrode layer 12 located on the second principal surface 1b side is lower than the heat conductivity of a material composing a first electrode layer 11 located on the first principal surface 1a side, heat transmission in the first electrode layer 11 is faster than heat transmission in the second electrode layer 12. Furthermore, since the second electrode layer 12 is composed of a material of relatively low heat conductivity, rapid conduction of the heat generated in the external electronic component 50 to the electronic component 10 is restrained. Consequently, impact of the heat of the external electronic component 50 on the electronic component 10 can be reduced.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an electronic component built-in structure and a method of manufacturing an electronic component built-in structure.

  Conventionally, an electronic component built-in structure in which electrode terminals are provided on both sides of the structure is known as one of the electronic component built-in structures incorporating electronic components. For example, in Patent Document 1, a plurality of first electrode terminals formed on one main surface to be connected to an external substrate and the like, and external electrons mounted on the main surface formed on the other main surface. A built-in electronic component including a plurality of second electrode terminals to be connected to a component (for example, a semiconductor chip), and in which the first electrode terminal and the second electrode terminal are connected via the embedded electronic component (built-in electronic component) A structure is disclosed.

JP, 2015-213199, A

  In the electronic component built-in structure described in Patent Document 1, when heat is generated in the external electronic component mounted on the electronic component built-in structure, the heat in the electronic component built-in structure is the second electrode terminal, the built-in electronic component , And the order of the first electrode terminal. As a result of intensive research, the inventors have newly found a technology capable of reducing the influence of the heat of the external electronic component on the built-in electronic component.

  An object of the present invention is to provide an electronic component built-in structure and a method of manufacturing an electronic component built-in structure capable of reducing the influence of heat of an external electronic component on an electronic component.

  An electronic component built-in structure according to an embodiment of the present invention has a first main surface and a second main surface opposite to the first main surface, and an external electron is provided on the second main surface side. An electronic component built-in structure on which a component is mounted, the first insulating layer constituting the first main surface, a connecting portion stacked on the first insulating layer, and the connecting portion; An electronic component having a first electrode layer located on the first main surface side in the stacking direction and electrically connected to the connection portion, and a second electrode layer located on the second main surface side in the stacking direction A second insulating layer integrally covering the first insulating layer and the electronic component, a plurality of first electrode terminals provided on the first main surface, and a second main surface, which are connected to the external electronic component And a plurality of first electrode terminals extending in the stacking direction and penetrating through the first insulating layer to electrically connect the connection portion and the first electrode terminal. And a plurality of second via conductors extending in the stacking direction and penetrating through the second insulating layer to electrically connect the second electrode layer of the electronic component to the second electrode terminal, and the second electrode The thermal conductivity of the material constituting the layer is lower than the thermal conductivity of the material constituting the first electrode layer.

  In the electronic component built-in structure, when heat is generated in the external electronic component mounted on the electronic component built-in structure, the heat is transmitted in the order of the second electrode terminal, the electronic component, and the first electrode terminal. The thermal conductivity of the material forming the second electrode layer located on the main surface side of the first layer is lower than the thermal conductivity of the material forming the first electrode layer located on the first main surface side. The heat transfer in the first electrode layer is faster than the heat transfer in the two electrode layers. Further, since the second electrode layer is made of a material having a relatively low thermal conductivity, the heat transfer in the second electrode layer is relatively slow, and the heat generated in the external electronic component is rapidly generated in the electronic component Conduction is suppressed. Therefore, it is possible to reduce the influence of the heat of the external electronic component on the electronic component.

  In one form, the thickness of the second electrode layer is greater than the thickness of the first electrode layer. In this case, the heat capacity of the second electrode layer is larger than that of the first electrode layer. Therefore, the rapid temperature rise of the second electrode layer due to the heat generated in the external electronic component can be suppressed, whereby the rapid temperature rise of the electronic component can also be suppressed.

  In one embodiment, the second insulating layer is composed of a first layer and a second layer stacked in order from the side of the first insulating layer, and the first layer is a cavity opened so that the connection portion is exposed. And an electronic component is disposed in the cavity. By arranging the electronic component in the cavity portion of the second insulating layer, the height of the electronic component built-in structure can be reduced.

  In a method of manufacturing an electronic component built-in structure according to an aspect of the present invention, a first main surface on which a first electrode terminal is formed, and a second electrode terminal located opposite to the first main surface. A method of manufacturing an electronic component-embedded structure having an external electronic component mounted thereon so as to be connected to a second electrode terminal on the side of the second main surface, and having the formed second main surface, A first via conductor to be connected to the first electrode terminal, and a connection portion connected to the first via conductor are formed, and a first step of preparing a first insulating layer constituting a first main surface; An electronic component having a second electrode layer provided on the side opposite to the electrode layer and the first electrode layer, such that the first electrode layer is located on the first main surface side and electrically connected to the connection portion A second step of integrally mounting the first insulating layer and the electronic component and forming a second main surface, A third step of forming, and a fourth step of penetrating the second insulating layer and forming a second via conductor to be connected to the second electrode terminal, wherein the thermal conduction of the material constituting the second electrode layer The rate is lower than the thermal conductivity of the material constituting the first electrode layer.

  In the method of manufacturing an electronic component built-in structure, the first electrode layer and the second electrode layer of the electronic component are respectively positioned on the first main surface side and the second main surface side in the stacking direction, and The thermal conductivity of the material which comprises 2 electrode layers is lower than the thermal conductivity of the material which comprises a 1st electrode layer, and the electronic component built-in structure is manufactured. When heat is generated in the external electronic component mounted on the electronic component built-in structure, the heat is transmitted in the order of the second electrode terminal, the electronic component, and the first electrode terminal, but the heat is transferred from the heat transfer in the second electrode layer. Heat transfer in one electrode layer is faster. Further, since the second electrode layer is made of a material having a relatively low thermal conductivity, the heat transfer in the second electrode layer is relatively slow, and the heat generated in the external electronic component is rapidly generated in the electronic component Conduction is suppressed. Therefore, it is possible to reduce the influence of the heat of the external electronic component on the electronic component.

  According to the present invention, an electronic component built-in structure and a method of manufacturing an electronic component built-in structure capable of reducing the influence of heat of an external electronic component on an electronic component are provided.

It is a sectional view showing roughly an electronic component built-in structure concerning one embodiment of the present invention. It is sectional drawing which showed an example of the mounting state of the electronic component built-in structure shown in FIG. It is sectional drawing which expanded and showed a part of electronic component of the electronic component built-in structure shown in FIG. It is the figure which showed each process of the manufacturing method of the electronic component built-in structure shown in FIG. It is the figure which showed each process of the manufacturing method of the electronic component internal structure shown in FIG. It is the figure which showed each process of the manufacturing method of the electronic component internal structure shown in FIG. It is the figure which showed each process of the manufacturing method of the electronic component built-in structure shown in FIG. It is the figure which showed the modification of the manufacturing method of the electronic component built-in structure shown in FIG.

  Hereinafter, various embodiments will be described in detail with reference to the drawings. In the drawings, the same or corresponding portions are denoted by the same reference numerals and redundant description will be omitted.

  FIG. 1 is a cross-sectional view schematically showing an electronic component built-in structure according to an embodiment of the present invention. As shown in FIG. 1, the electronic component built-in structure 1 is a structure incorporating an electronic component 10 described later, and is used, for example, in a communication terminal or the like. The electronic component built-in structure 1 has a stacked structure in which the second insulating layer 30 is stacked on the first insulating layer 20. The first insulating layer 20 and the second insulating layer 30 are made of, for example, an insulating material such as an epoxy resin, a polyimide resin, an acrylic resin, or a phenol resin. The insulating material constituting the second insulating layer 30 may be, for example, a material such as a thermosetting resin or a photocurable resin whose hardness is changed by a specific treatment. The lower surface of the first insulating layer 20 constitutes one main surface (first main surface) 1a of the electronic component built-in structure 1, and the upper surface of the second insulating layer 30 is opposite to the first main surface 1a. The side main surface (second main surface) 1b is configured.

  A plurality of first electrode terminals 42 are provided on the first main surface 1 a of the electronic component built-in structure 1. The first electrode terminal 42 is made of, for example, a conductive material such as Cu. In the present embodiment, each first electrode terminal 42 is provided so as to overlap the main surface 1 a, but may be provided embedded in the first insulating layer 20. Each of the first electrode terminals 42 is provided with, for example, a solder bump 43 as shown in FIG. Each first electrode terminal 42 is connected to an external substrate (not shown) facing the first main surface 1 a of the electronic component built-in structure 1 via the solder bump 43.

  Returning to FIG. 1, a plurality of second electrode terminals 44 are also provided on the second major surface 1 b of the electronic component built-in structure 1. Similar to the first electrode terminal 42, the second electrode terminal 44 is made of, for example, a conductive material such as Cu. In the present embodiment, each second electrode terminal 44 is provided so as to overlap the main surface 1 b, but may be provided embedded in the second insulating layer 30. Each second electrode terminal 44 is provided with, for example, a solder bump 45 as shown in FIG. Each second electrode terminal 44 is connected to an external electronic component 50 such as an IC mounted on the second main surface 1 b of the electronic component built-in structure 1 via a solder bump 45.

  As shown in FIG. 1, the wiring 46 and the connection portion 48 are formed on the first insulating layer 20. Since both the interconnections 46 and the connection portions 48 are formed by patterning the conductive layer as described later, the interconnections 46 and the connection portions 48 exist in the same layer and have the same thickness. The wiring 46 and the connection portion 48 are made of, for example, a conductive material such as Cu. In the present embodiment, the electronic component built-in structure 1 has a pair of connection parts 48. Each of the wiring 46 and the connection portion 48 is formed of a plurality of first insulating layers 20 penetrating through the first insulating layer 20 so as to extend in the thickness direction of the first insulating layer 20 (that is, the stacking direction of the electronic component built-in structure 1). The via conductor 62 is electrically connected to the first electrode terminal 42.

  The electronic component 10 is provided so as to straddle the pair of connecting portions 48 on the pair of connecting portions 48. The electronic component 10 has a pair of first electrode layers 11 provided on the lower side so as to correspond to each of the pair of connecting portions 48, and a pair of second electrode layers 12 provided on the upper side. In the present embodiment, the electronic component 10 is a thin film capacitor including the dielectric layer 13 disposed between the pair of first electrode layers 11 and the pair of second electrode layers 12 and includes two capacitor structures. There is. The dielectric layer 13 is included as a functional layer of the electronic component 10. The electronic component 10 is connected to the connection portion 48 via a conductive material layer 15 such as a solder layer.

  As shown in FIG. 3, the thickness T2 of the second electrode layer of the electronic component 10 is larger than the thickness T1 of the first electrode layer. As an example, the entire thickness of the electronic component 10 is 10 μm to 80 μm, the thickness of the first electrode layer 11 is 0.1 μm to 20 μm, the thickness of the second electrode layer 12 is 0.1 μm to 30 μm, and the thickness of the dielectric layer 13 is It can be designed to have a thickness of 0.05 μm to 0.4 μm.

The thermal conductivity of the material forming the second electrode layer 12 is lower than the thermal conductivity of the material forming the first electrode layer 11. As indicated by arrows in FIG. 3, the heat generated by the external electronic component 50 is first conducted to the second electrode layer 12, and then conducted in the order of the dielectric layer 13 and the first electrode layer 11. As a material of the first electrode layer 11, for example, Cu or a Cu alloy can be used. In the present embodiment, the first electrode layer 11 is made of Cu, and the thermal conductivity thereof is, for example, about 350 to 372 W / (m · K). As a material of the second electrode layer 12, for example, Ni or a Ni alloy can be used. In the present embodiment, the second electrode layer 12 is made of Ni, and the thermal conductivity thereof is, for example, about 59 W / (m · K). As a material of the dielectric layer 13, for example, a perovskite-based dielectric material is used. In particular, a thin film capacitor using a dielectric material having a Curie point at a relatively low temperature, such as barium titanate (BaTiO ₃ ), for the dielectric layer 13 has a large change in characteristics such as capacitance due to temperature, so the present invention The effect of the embedding method tends to be more prominent. The functional layer of the electronic component 10 may be a so-called multilayer thin film capacitor having a laminated structure in which a plurality of dielectric layers 13 and a plurality of internal electrode layers are alternately laminated.

  Returning to FIG. 1, the second insulating layer 30 has a two-layer structure including the first layer 32 and the second layer 34. That is, the second insulating layer 30 is composed of the first layer 32 and the second layer 34 stacked in order from the side of the first insulating layer 20.

  The first layer 32 of the second insulating layer 30 covers the wires 46 formed on the first insulating layer 20, and the cavity 33 in a region corresponding to the connecting portion 48 formed on the first insulating layer 20. Have. The cavity portion 33 penetrates the first layer 32 in the stacking direction, and is opened so that the connection portion 48 on the first insulating layer 20 is exposed. The opening dimension of the cavity portion 33 is designed to be larger than the dimension of the electronic component 10, and the electronic component 10 is accommodated in the cavity portion 33, and the first electrode of the electronic component 10 in the cavity portion 33. Layer 11 is connected to connection 48.

  Below the electronic component 10, a space V defined by the electronic component 10 housed in the cavity 33 and the first insulating layer 20 is present. The space V is filled with the insulating resin 70. The insulating resin 70 is made of, for example, a low dielectric constant material (an epoxy resin containing a filler) or an underfill material. Each of the wirings 46 located below the electronic component 10 is covered with the insulating resin 70.

  The second layer 34 of the second insulating layer 30 integrally covers the first layer 32 and the electronic component 10 accommodated in the cavity 33. In the second layer 34, a plurality of second via conductors 64 are provided so as to extend in the thickness direction (that is, the stacking direction of the electronic component built-in structure 1). The second electrode layer 12 of the electronic component 10 is electrically connected to the second electrode terminal 44 via the second electrode terminal 44. The plurality of second via conductors 64 are not shown in FIGS. 1 and 2 except for the second via conductors 64 penetrating only the second layer 34 shown in FIGS. It may also include a second via conductor 64 connecting the wire 46 and the second electrode terminal 44 through the layer 30 (the first layer 32 and the second layer 34).

  Next, a method of manufacturing the electronic component built-in structure 1 will be described with reference to FIGS.

  FIGS. 4 to 7 show a manufacturing method of manufacturing one electronic component built-in structure 1, but in practice, after forming a plurality of structures of the electronic component built-in structure 1 on one wafer, individual pieces And the plurality of electronic component built-in structures 1 are manufactured at one time. Therefore, in FIGS. 4 to 7, a part of the wafer (a part corresponding to one electronic component built-in structure 1) is shown in an enlarged manner.

  When manufacturing the electronic component built-in structure 1, first, the first via conductor 62 to be connected to the first electrode terminal 42 and the connection portion 48 connected to the first via conductor 62 are formed, and the first The first insulating layer 20 constituting the main surface 1a of the first embodiment is prepared (first step). Specifically, as shown in FIG. 4A, a wafer W having a function as a support substrate is prepared, and a temporary adhesive layer L is formed on the wafer W. The material of the wafer W is not particularly limited, and for example, a glass wafer or the like can be used. The temporary adhesive layer L can be formed by a known method such as spin coating. In addition, you may prepare the wafer W in which the temporary adhesion layer L was formed previously.

  Next, as shown in FIG. 4B, a seed layer S is formed on the temporary adhesive layer L. The seed layer S is made of, for example, a conductive material such as Cu. Furthermore, as shown in FIG. 4C, the first insulating layer 20 is laminated on the seed layer S, and the first insulating layer 20 is patterned using a known patterning technique to form the first vias described above. A through hole 20 a is provided in the first insulating layer 20 at a position where the conductor 62 is to be formed. Then, a plated layer is formed on the patterned first insulating layer 20 by electrolytic plating. Among the plating layers, the plating layer formed in the through hole 20a of the first insulating layer 20 constitutes the first via conductor 62, and the plating layer formed on the first insulating layer 20 is the wiring 46 and the connection portion 48. Configure

  Next, as shown in FIG. 5A, the first layer 32 of the second insulating layer 30 is formed so as to entirely cover the first insulating layer 20 on which the plating layer is formed. The first layer 32 of the second insulating layer 30 is patterned using a known patterning technique, and the cavity 33 is provided in a region corresponding to the connecting portion 48 formed on the first insulating layer 20.

  Next, the electronic component 10 having the second electrode layer 12 provided opposite to the first electrode layer 11 and the first electrode layer 11 is disposed with the first electrode layer 11 located on the first main surface 1 a side. It mounts with respect to the connection part 48 so that it may be electrically connected with the connection part 48 (2nd process). Specifically, as shown in FIG. 5 (b), the electronic component 10 is placed in the cavity 33, and the component 18 to be the electronic component 10 in the cavity 33 is connected via the conductive material layer 15. It is connected to the unit 48. The component 18 to be the electronic component 10 has one Ni thick film electrode 12A to be the pair of second electrode layers 12. Before or after the component 18 to be the electronic component 10 is installed, the space V defined by the component 18 to be the electronic component 10 and the first insulating layer 20 is filled with the insulating resin 70. As a result, each of the wirings 46 located below the component 18 to be the electronic component 10 is covered with the insulating resin 70.

  Then, as shown in FIG. 5C, a resist 82 is provided so as to surround the periphery of the component 18 to be the electronic component 10 and etching is performed to thin the thickness of the Ni thick film electrode 12A. Then, as shown in FIG. 6A, the resist 84 is provided so as to cover the region to be the second electrode layer 12 of the resist 82 and the Ni thick film electrode 12A, and the etching process is performed. As a result, as shown in FIG. 6B, an electronic component 10 having a pair of second electrode layers 12 is obtained. The resists 82 and 84 are removed after the etching process.

  Next, as shown in FIG. 7A, the first layer 32 and the electronic component 10 housed in the cavity portion 33 are integrally covered to form a second insulation 1b that constitutes the second main surface 1b. A second layer 34 of layers is formed (third step). Then, the second layer 34 is patterned using a known patterning technique to form through holes 34 a in the second layer 34 at positions where the above-described second via conductors 64 are formed. As a result, the second insulating layer 30 is formed.

  Then, the second via conductor 64 to be connected to the second electrode terminal 44 is formed through the second insulating layer 30 (second layer 34) (fourth step). Specifically, as shown in FIG. 7B, a plating layer is formed on the second layer 34 of the patterned second insulating layer 30 by electrolytic plating. Among the plating layers, the plating layer formed in the through hole 34 a of the second layer 34 of the second insulating layer 30 constitutes the second via conductor 64, and is formed on the second layer 34 of the second insulating layer 30. The plated layer constitutes the second electrode terminal 44.

  Finally, the temporary adhesive layer L and the wafer W are removed, and the first electrode terminal 42 is provided on the first main surface 1a exposed by the removal, whereby the electronic component built-in structure 1 described above is completed. Thereafter, the external electronic component 50 (see FIG. 2) is mounted on the electronic component built-in structure 1. At this time, the external electronic component 50 is electrically connected to the second electrode terminal 44 through the solder bump 45. Then, the external electronic component 50 is sealed using a resin or the like.

  Unlike the manufacturing method described above, after the step of forming the second electrode terminal 44 shown in FIG. 7B, as shown in FIG. 8, the external electronic component 50 is mounted on the second main surface 1b. After resin sealing is performed, the temporary adhesive layer L and the wafer W may be removed. Thereafter, the first electrode terminal 42 is provided on the first main surface 1a exposed by the removal, whereby the electronic component built-in structure 1 is completed.

  As described above, in the electronic component built-in structure 1, when heat is generated in the external electronic component 50 mounted on the electronic component built-in structure 1, the heat is transmitted to the second electrode terminal 44, the electronic component 10, The heat conductivity of the material constituting the second electrode layer 12 located on the second main surface 1 b side, which is transmitted in the order of the first electrode terminal 42, is the first electrode layer 11 located on the first main surface 1 a side It is lower than the thermal conductivity of the material of which Therefore, the heat transfer in the first electrode layer 11 is faster than the heat transfer in the second electrode layer 12. Thereby, in the electronic component 10, the heat is transmitted in the order of the second electrode layer 12, the dielectric layer 13 and the first electrode layer 11 (see FIG. 3), but the heat transfer from the second electrode layer 12 to the dielectric layer 13 The heat transfer from the dielectric layer 13 to the first electrode layer 11 is faster than that in FIG. Further, since the second electrode layer 12 is made of a material having a relatively low thermal conductivity, the heat transfer in the second electrode layer 12 is relatively slow, and the heat generated in the external electronic component 50 is rapid. Conduction to the electronic component 10 is suppressed. Therefore, the influence of the heat of the external electronic component 50 on the electronic component 10 can be reduced.

  Further, in the electronic component built-in structure 1, the thickness T 2 of the second electrode layer 12 is larger than the thickness T 1 of the first electrode layer 11. Thereby, the heat capacity of the second electrode layer 12 is larger than that of the first electrode layer 11. Therefore, the rapid temperature rise of the second electrode layer 12 due to the heat generated in the external electronic component 50 can be suppressed, whereby the rapid temperature rise of the electronic component 10 can also be suppressed.

  Further, in the electronic component built-in structure 1, the second insulating layer 30 is configured of the first layer 32 and the second layer 34 sequentially stacked from the side of the first insulating layer 20. Then, the first layer 32 has a cavity 33 opened so that the connection 48 is exposed, and the electronic component 10 is disposed in the cavity 33. By arranging the electronic component 10 in the cavity 33 of the second insulating layer 30 as described above, the height of the electronic component built-in structure 1 can be reduced.

  Further, in the method of manufacturing the electronic component built-in structure 1, the first electrode layer 11 and the second electrode layer 12 of the electronic component 10 are on the first main surface 1a side and the second main surface 1b side in the stacking direction. The thermal conductivity of the material positioned respectively and constituting the second electrode layer 12 is lower than the thermal conductivity of the material constituting the first electrode layer 11, whereby the electronic component built-in structure 1 is manufactured. When heat is generated in the external electronic component 50 mounted on the electronic component built-in structure 1, the heat is transmitted in the order of the second electrode terminal 44, the electronic component 10, and the first electrode terminal 42, but the second main surface 1b The thermal conductivity of the material forming the second electrode layer 12 located on the side is lower than the thermal conductivity of the material forming the first electrode layer 11 located on the first main surface 1 a side. Therefore, the heat transfer in the first electrode layer 11 is faster than the heat transfer in the second electrode layer 12. Thereby, in the electronic component 10, the heat is transmitted in the order of the second electrode layer 12, the dielectric layer 13 and the first electrode layer 11 (see FIG. 3), but the heat transfer from the second electrode layer 12 to the dielectric layer 13 The heat transfer from the dielectric layer 13 to the first electrode layer 11 is faster than that in FIG. Further, since the second electrode layer 12 is made of a material having a relatively low thermal conductivity, the heat transfer in the second electrode layer 12 is relatively slow, and the heat generated in the external electronic component 50 is rapid. Conduction to the electronic component 10 is suppressed. Therefore, the influence of the heat of the external electronic component 50 on the electronic component 10 can be reduced.

DESCRIPTION OF SYMBOLS 1 ... electronic component built-in structure, 1a ... 1st main surface, 1b ... 2nd main surface, 10 ... Electronic component, 11 ... 1st electrode layer, 12 ... 2nd electrode layer, 13 ... dielectric material layer, 20 ... first insulating layer, 30 ... second insulating layer, 32 ... first layer, 33 ... cavity portion, 34 ... second layer, 42 ... first electrode terminal, 44 ... second electrode terminal, 48 ... connection portion, 62 ... 1st via conductor, 64 ... 2nd via conductor, T1, T2 ... thickness.

Claims (4)

An electronic component built-in structure having a first main surface and a second main surface opposite to the first main surface, and an external electronic component being mounted on the second main surface side. ,
A first insulating layer constituting the first main surface;
A connection portion stacked on the first insulating layer;
A first electrode layer mounted on the connection portion and located on the first main surface side in the stacking direction and electrically connected to the connection portion; and on the second main surface side in the stacking direction An electronic component having a second electrode layer located thereon;
A second insulating layer integrally covering the first insulating layer and the electronic component;
A plurality of first electrode terminals provided on the first main surface;
A plurality of second electrode terminals provided on the second main surface and to be connected to the external electronic component;
A plurality of first via conductors which extend in the stacking direction and penetrate the first insulating layer and electrically connect the connection portion and the first electrode terminal;
And a plurality of second via conductors extending in the stacking direction, penetrating through the second insulating layer, and electrically connecting the second electrode layer of the electronic component and the second electrode terminal.
The electronic component built-in structure whose thermal conductivity of the material which comprises the said 2nd electrode layer is lower than the thermal conductivity of the material which comprises the said 1st electrode layer.   The electronic component built-in structure according to claim 1, wherein a thickness of the second electrode layer is larger than a thickness of the first electrode layer. The second insulating layer is composed of a first layer and a second layer stacked in order from the side of the first insulating layer,
The electronic component built-in structure according to claim 1 or 2, wherein the first layer has a cavity portion opened so as to expose the connection portion, and the electronic component is disposed in the cavity portion. A first main surface on which a first electrode terminal is formed, and a second main surface opposite to the first main surface and on which a second electrode terminal is formed; A method of manufacturing an electronic component built-in structure in which an external electronic component is mounted so as to be connected to the second electrode terminal on the main surface side of
A first via conductor to be connected to the first electrode terminal, and a connection portion connected to the first via conductor are formed, and a first step of preparing a first insulating layer constituting the first main surface When,
In the electronic component having a first electrode layer and a second electrode layer provided on the opposite side to the first electrode layer, the first electrode layer is positioned on the first main surface side and the electrical connection with the connection portion A second step of mounting the connection portion so as to be connected
A third step of integrally covering the first insulating layer and the electronic component to form a second insulating layer constituting the second main surface;
And forming a second via conductor penetrating the second insulating layer and connected to the second electrode terminal.
A method of manufacturing an electronic component built-in structure, wherein a thermal conductivity of a material forming the second electrode layer is lower than a thermal conductivity of a material forming the first electrode layer.

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