JP2019086454A - Semiconductor testing device and method for separating semiconductor element - Google Patents

Abstract

To provide a semiconductor testing device which can separate a semiconductor element from the semiconductor testing device without human intervention, and a method for separating the semiconductor element.SOLUTION: A semiconductor testing device 1 includes a pressurization conduction unit 3 and a separation unit 6. The pressurization conduction unit 3 runs an electric test while pressurizing the semiconductor element 11 by a first intermediate material 21 and a second intermediate material 25. The separation unit 6 has adsorption pads 61a to 61c and cylinders 62a and 62b. The positions of the adsorption pads 61b and 61c are changed by the cylinders 62b and 62c while the second intermediate material 25, for example, is being held by the adsorption pads 61a to 61c.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor test apparatus and a method of separating semiconductor elements, and more particularly to a semiconductor test apparatus which applies a large direct current to semiconductor elements and a method of separating semiconductor elements which separates semiconductor elements from semiconductor test apparatus. is there.

  2. Description of the Related Art Conventionally, in a semiconductor device for use in which a large current flows, it has been performed in advance to evaluate the electrical characteristics by supplying a large current to the semiconductor device. Semiconductor test equipment is used to evaluate electrical characteristics. As patent documents which disclosed such a semiconductor testing device, there are patent documents 1 and patent documents 2, for example.

  In the semiconductor test apparatus disclosed in Patent Document 1, a pressing plate is directly mounted on the semiconductor element, and a large current is caused to flow through the semiconductor element while applying a downward pressing force to the semiconductor element by the pressing plate. . Further, in the semiconductor test apparatus disclosed in Patent Document 2, a method is proposed in which an electrical conduction test is performed in a state in which an intermediate material such as a laminated metal foil is sandwiched between the semiconductor element and the pressure plate.

International Publication No. 2014/148294 JP, 2016-11862, A

  In the semiconductor test apparatus, a large current flows in the semiconductor element when the semiconductor element is tested. For this reason, in the semiconductor testing device disclosed in Patent Document 2, it is assumed that an interlayer material of laminated metal foil or the like will be welded to the semiconductor element and the pressure plate.

  When the interlayer and the semiconductor element or the like are welded, for example, one of the interlayer and the semiconductor element or the like is adsorbed, and in that state, the other is separated by pulling the other by a human hand. There is a need. As described above, manually separating the semiconductor elements from the semiconductor test apparatus requires labor and time, which is a factor that hinders the automation of the process.

  The present invention has been made in view of such problems, and it is an object of the present invention to provide a semiconductor test apparatus capable of separating a semiconductor element from a semiconductor test apparatus without requiring manual operation. It is an object of the present invention to provide a method of separating semiconductor devices for separating semiconductor devices from a semiconductor test apparatus.

  A semiconductor test apparatus according to the present invention has a pressure application unit and a separation unit. The pressure application unit electrically tests the semiconductor element while pressing the semiconductor element having the first main surface and the second main surface facing each other through the spacer. The separation part separates the semiconductor element and the interlayer. The separation unit includes a holding unit and a position changing unit. The holding portion holds the spacer. The position changing portion changes the position of the holding portion while holding the spacer, and separates the semiconductor element from the spacer by creating a gap between the spacer and the semiconductor element.

  The method for separating a semiconductor device according to the present invention is an semiconductor test apparatus which performs an electrical test while pressing a semiconductor device having a first main surface and a second main surface facing each other through an interlayer. A method for separating a semiconductor element, which separates the semiconductor element from the spacer, and the following operation is performed. As a spacer, the spacer on the first major surface side is disposed on the side of the first major surface of the semiconductor element. The first position on the first main surface side interspace material is held, and the second position spaced from the first position is held. The first main surface side interspace material is deformed by shortening the distance while holding the first position and the second position in the first main surface side interspace material, and between the first main surface side interspace material and the semiconductor element To separate the semiconductor element from the first main surface side interspace material.

  According to the semiconductor test apparatus of the present invention, the gap between the spacer and the semiconductor element is generated by changing the position of the holder while the spacer is held by the separation unit. Thus, the semiconductor element and the spacer can be separated without requiring any manual operation.

  According to the method of separating semiconductor elements of the present invention, the first main surface side interspace material is deformed by reducing the distance between the first position and the second position holding the first main surface side interspace material respectively. A gap is generated between the first main surface side interspace material and the semiconductor element. Thereby, the semiconductor element and the first main surface side interspace material can be separated without requiring manual work.

FIG. 1 is a perspective view of a semiconductor test apparatus according to a first embodiment. FIG. 5 is a perspective view showing an example of a semiconductor element to be tested with the semiconductor test apparatus in the embodiment. FIG. 7 is a front view including a partial cross section showing a pressure application unit disposed in the semiconductor test apparatus in the embodiment. In the embodiment, it is a perspective view showing the separation part arranged in the semiconductor testing device. FIG. 21 is a cross-sectional view showing an operation for describing an operation of the semiconductor test device in the embodiment. FIG. 6 is a cross-sectional view showing an operation performed after the operation shown in FIG. 5 in the first embodiment. FIG. 7 is a cross-sectional view showing an operation performed after the operation shown in FIG. 6 in the first embodiment. FIG. 8 is a cross-sectional view showing an operation performed after the operation shown in FIG. 7 in the first embodiment. FIG. 9 is a front view including a partial cross section showing an operation performed after the operation shown in FIG. 8 in the embodiment. FIG. 10 is a front view including a partial cross section showing an operation performed after the operation shown in FIG. 9 in the embodiment. FIG. 11 is a front view and a top view showing an operation performed after the operation shown in FIG. 10 in the embodiment. FIG. 12 is a front view and a top view showing an operation performed after the operation shown in FIG. 11 in the embodiment. FIG. 13 is a front view and a top view showing an operation performed after the operation shown in FIG. 12 in the embodiment. FIG. 14 is a front view showing a mechanism including a claw portion for performing an operation performed after the operation shown in FIG. 13 in the embodiment. In the embodiment, it is a top view which shows an example of the shape of the 3rd spacer for demonstrating the operation | movement by a nail | claw part. FIG. 21 is a top view of a positioning guide including a third spacer and a semiconductor element, for explaining the operation by the claws in the embodiment. FIG. 14 is a front view showing an operation performed after the operation shown in FIG. 13 in the embodiment. FIG. 18 is a front view showing an operation performed after the operation shown in FIG. 17 in the embodiment. FIG. 16 is a perspective view showing a separation unit in a semiconductor test apparatus according to a second embodiment. FIG. 16 is a top view showing an operation for describing an operation of the semiconductor test device in the embodiment. FIG. 17 is a front view showing one operation for describing the operation of the semiconductor test device in the embodiment.

Embodiment 1
An example of the semiconductor test apparatus according to the first embodiment will be described. The semiconductor test apparatus according to the embodiment is used to evaluate the electrical characteristics of a semiconductor device used in applications where a large current flows.

  As shown in FIG. 1, the semiconductor test apparatus 1 includes a pressure application unit 3, an application control unit 4, a transfer unit 5, a separation unit 6, and a collection unit 7. The pressurizing and energizing unit 3, the energization control unit 4, the transfer unit 5, the separation unit 6, and the recovery unit 7 are disposed on the base 2.

  The pressure application unit 3 includes a cooling plate 31, a positioning guide 32, a pressure application probe 33, a pressure plate 34, and a precision servo press 35. The precision servo press 35 is supported by the support 36. The energization control unit 4 includes a programmable logic controller 41, a graphic operation terminal 42, a press controller 43, an energization power supply 44, and a power supply controller 45.

  The transfer unit 5 includes an X-direction transfer mechanism 51, a Y-direction transfer mechanism 52, a transfer stand 53, and a Z-direction transfer mechanism 54. The separation unit 6 includes suction pads 61 a, 61 b, 61 c, cylinders 62 a, 62 b and an air tube 63. The recovery unit 7 includes a semiconductor element recovery tray 71 and an interlayer material recovery box 72.

  As shown in FIG. 2, the semiconductor element 11 whose electrical characteristics are to be evaluated has a surface 11 a as a first main surface facing each other and a back surface 11 b as a second main surface. The surface electrode 12 is disposed on the surface 11 a. The back surface electrode 13 is arrange | positioned at the back surface 11b. In the case where the semiconductor element 11 is, for example, a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), a source electrode and a gate electrode are disposed as the surface electrode 12. A drain electrode is disposed as the back electrode 13. In addition, the shape of the surface electrode 12 and the shape of the back surface electrode 13 are only an example, and are not limited to these shapes.

  Next, the pressure applying unit 3 will be specifically described. As shown in FIG. 3, the pressure applying unit 3 includes a cooling plate 31, a positioning guide 32, a first spacer 21 as a first main surface side spacer second portion, and a first main surface side spacer first portion. A second spacer 23 as a second spacer, a third spacer 25 as a second major surface spacer, a pressure application probe 33, a pressure plate 34 and a precision servo press 35 are provided.

  The cooling plate 31 is a plate-like member on which the semiconductor element 11 is mounted. The cooling plate 31 has a rectangular planar shape. The cooling plate 31 is a member for cooling the semiconductor element 11 that generates heat when conducting evaluation in the semiconductor test apparatus.

  A convex portion 31 a is provided at the center of the cooling plate 31. The cooling plate 31 is preferably a material having high thermal conductivity and conductivity, and is preferably made of, for example, any material selected from the group consisting of aluminum, copper and carbon.

  The positioning guide 32 is a member for determining the position of the semiconductor element 11 on the cooling plate 31. A hole 32 a is provided at the center of the positioning guide 32. The convex portion 31a of the cooling plate 31 is fitted into the hole 32a. Furthermore, the third spacer 25 and the semiconductor element 11 described later are fitted into the holes 32a. Thus, positioning of the semiconductor element 11 on the cooling plate 31 is performed.

  The material (material) of the positioning guide 32 may be any material having insulation properties, heat resistance and wear resistance so as not to divide the current flow to the semiconductor element 11. For example, a ceramic polymer material Is preferred. In addition, a metal material such as copper or aluminum coated with an insulating film may be applied. As an insulating film, an insulating tape, ceramic coating, glass coating etc. are preferable, for example. By applying these materials, for example, factors that affect the process of the conduction inspection, such as current diversion, can be inexpensively eliminated.

  The first spacer 21 is disposed between the semiconductor element 11 and a pressure application probe 33 described later. The first spacer 21 needs to have a function of cooling the semiconductor element 11 as well as evenly distributing the heat generated by the energization of the semiconductor element 11 in the back surface. Therefore, the size of the first spacer 21 is preferably equal to the size of the semiconductor element 11 in plan view.

  The thickness of the first interlayer 21 is preferably thicker from the viewpoint of durability, but from the viewpoint of cooling, if the thickness is too thick, the cooling deteriorates. For this reason, it is preferable that the thickness is about the same as the thickness of the semiconductor element 11 or thinner than the thickness of the semiconductor element 11 and not broken during the energization test.

  Since the pressure application probe 33 is in contact with the first interlayer 21, the surface roughness of the first interlayer 21 is reduced to increase the contact area between the first interlayer 21 and the pressure application probe 33. Is preferred. The surface roughness of the first spacer 21 is, for example, preferably about 10 μm. In addition, the first spacer 21 has a role of absorbing a deviation in parallelism between the semiconductor element 11 and the bottom surface of the lowered pressure application probe 33.

  In particular, when applying a plurality of pressure application probes 33, the length of the pressure application probes 33 may vary. In order to equalize the pressure applied by the plurality of pressure applying probes 33, a desired thickness is required as the thickness of the first spacer 21. If the thickness of the first interlayer 21 is thin, plastic deformation is likely to occur, making it difficult to obtain a uniform pressing force. In addition, the semiconductor element 11 may be damaged. Furthermore, when current flows, a current flows locally, and the back surface of the semiconductor element 11 is easily oxidized.

  The second interlayer 23 is disposed between the semiconductor element 11 and the pressure application probe 33, and in particular, disposed between the semiconductor element 11 and the first interlayer 21. The second spacer 23 contacts the surface electrode 12 of the semiconductor element 11.

  The size of the second interlayer 23 may be any size that can cover the semiconductor element 11, but as described later, the second interlayer 23 is deformed to form the semiconductor element 11 and the second interlayer 23. In order to create a gap between the two, it is preferable to have a size having a longitudinal direction and a short direction. The thickness of the second spacer 23 is required to be able to absorb a step of about several μm of the surface electrode formed on the surface 11 a of the semiconductor element 11. If the thickness of the second spacer 23 is too thin, the second spacer 23 may be broken during the energization test, which may make it impossible to conduct the energization test.

  On the other hand, when the thickness of the second interlayer 23 is too thick, thermal expansion in the rolling direction becomes large due to heat generation in the pressure application test. For this reason, a thermal expansion difference occurs due to the thermal expansion of the second interlayer 23 and the thermal expansion of the semiconductor element 11, and the semiconductor element 11 is easily scratched. In addition, when the rigidity of the second interlayer 23 is increased, there is a possibility that a void may be formed due to the deformation corresponding to the surface shape of the semiconductor element 11 in the pressure conduction test. As a result, the heat dissipation property is deteriorated, and the back surface 11b (see FIG. 2) of the semiconductor element 11 is easily oxidized.

  The third interlayer 25 is disposed between the convex portion 31 a of the cooling plate 31 and the semiconductor element 11. The third interlayer 25 contacts the back surface electrode 13 of the semiconductor element 11. The third spacer 25 electrically connects the back electrode 13 to the power supply 44. The third spacer 25 is electrically connected to the positive electrode or the negative electrode of the power supply 44 via the cooling plate 31. As materials (materials) of the first spacer 21, the second spacer 23 and the third spacer 25, materials having high electric conductivity, heat resistance and wear resistance are preferable, for example, copper, Aluminum and the like are preferred.

  The pressure application probe 33 is disposed immediately above the first spacer 21. The pressurizing and energizing probe 33 is electrically connected to the energizing power supply 44. When the pressure applying probe 33 contacts the first spacer 21, a large current is supplied to the semiconductor element 11. The pressure applying probe 33 has a cylindrical shape extending in the Z direction. The pressure application probe 33 is fixed to the pressure plate 34. The precision servo press 35 is attached to the pressure plate 34. The pressing probe 33 moves in the vertical direction (Z direction) by the precision servo press 35.

  As a material of the pressure applying probe 33, a material having high electric conductivity and having heat resistance, abrasion resistance and load resistance is preferable. For example, a conductive resin material containing a carbon filler or the like, brass, stainless steel or the like is preferable. . The pressure application probe 33 may be formed of, for example, a carbon tool steel such as tungsten.

  Here, three pressure application probes 33 are shown as the pressure application probes 33. However, if it is possible to withstand the load and current density per one pressure application probe 33, one pressure application is applied. The probe 33 may be used to apply a pressure. Further, the invention is not limited to three, and a plurality of pressure application probes 33 may be used to apply a pressure.

  As the material of the pressure plate 34, a material having high electric conductivity, heat resistance and wear resistance is used to electrically connect the pressure application probe 33 and to cool the generated pressure application probe 33. Preferred is, for example, copper or aluminum. The pressure plate 34 may be made of, for example, carbon tool steel.

  Next, the transfer unit 5 will be specifically described. The cooling plate 31 and the like are disposed on the transport stand 53. The Y-direction transfer mechanism transfers the carrier table 53 or the semiconductor element 11 or the like in the Y direction. The carrier table 53 is movable to a position immediately below the pressure application probe 33. The X-direction transfer mechanism 51 transfers the semiconductor element 11 and the like in the X direction. The Z direction transfer mechanism 54 transfers the semiconductor element 11 and the like in the Z direction.

  Next, the separation unit 6 will be specifically described. As shown in FIG. 4, the separation unit 6 has suction pads 61a, 61b, and 61c as holding units, and cylinders 62a and 62b as position changing units. The suction pad 61 a sucks the first spacer 21. The suction pad 61 b sucks one end side of the second spacer 23. The suction pad 61 c sucks the other end side of the second spacer 23.

  An air tube 63 is connected to the suction pads 61a, 61b, 61c. The cylinder 62a is driven to change the distance between the suction pad 61b and the suction pad 61a. The cylinder 62b is driven to change the distance between the suction pad 61c and the suction pad 61a.

  Next, the energization control unit 4 will be specifically described. The energization control unit 4 controls the driving of the transfer unit 5 and the energization of the pressure applying unit 3. In the programmable logic controller 41, a series of programs for controlling the drive of the transfer unit 5, the energization of the pressure application unit 3, and the drive of the separation unit 6 are installed. The programmable logic controller 41 is operated through the graphic operation terminal 42. For example, a graphic operation terminal manufactured by Mitsubishi Electric is used as the graphic operation terminal 42.

  The energization control unit 4 has the following function. The press controller 43 controls the drive of the precision servo press 35 of the pressure application unit 3. Necessary power is supplied from the power supply 44. The power supply controller 45 controls the supply of power from the energizing power supply 44.

  The precision servo press 35 is driven to lower the pressure plate 34 by reading the conditions set in advance in the press controller 43 according to the instruction from the programmable logic controller 41. As the pressure plate 34 descends, the pressure application probe 33 contacts the first spacer 21. Next, in accordance with an instruction from the programmable logic controller 41, the pressure of the pressure application probe 33 is increased to an arbitrarily set specified load value (25 kg to 100 kg).

Next, by reading conditions set in advance in the power supply controller 45, a current arbitrarily set from the energization power supply 44 is caused to flow in the forward direction to the semiconductor element 11 via the first spacer 21 and the like. The current density is set to, for example, 120 A / cm ² or more and 400 A / cm ² or less. When current flows, the temperature of the semiconductor element 11 is set to, for example, 150 ° C. or more and 230 ° C. or less.

  A thermocouple (not shown) is attached to the convex portion 31 a of the cooling plate 31. The temperature of the semiconductor element 11 during energization and pressurization is constantly measured by this thermocouple. When the temperature to be measured deviates from the prescribed temperature range (150 ° C. or more and 230 ° C. or less), the programmable logic controller 41 sends a signal for stopping energization / pressurization to the press controller 43 and the power supply controller 45 .

If the current density deviates from the specified current range (120 A / cm ² or more and 400 A / cm ² or less), the power supply controller 45 determines that the semiconductor element 11 being energized under pressure is defective. The result is sent to the programmable logic controller 41. From the programmable logic controller 41, a signal for stopping energization and pressurization is sent to the press controller 43 and the power supply controller 45. By stopping the energization and pressurization when an abnormality occurs, damage to the peripheral mechanism can be suppressed. The semiconductor test apparatus according to the first embodiment is configured as described above.

  Next, an example of the operation of the above-described semiconductor test apparatus will be described. First, the operation of the pressure applying unit 3 will be described. As shown in FIG. 5, the positioning guide 32 is disposed on the cooling plate 31 in such a manner that the convex portion 31 a of the cooling plate 31 is fitted into the hole 32 a of the positioning guide 32. Next, the third spacer 25 is placed on the convex portion 31a located in the hole 32a.

  Next, as shown in FIG. 6, the semiconductor element 11 is placed on the third spacer 25. Next, as shown in FIG. 7, the second spacer 23 is placed so as to cover the semiconductor element 11. Next, as shown in FIG. 8, the first spacer 21 is placed on the second spacer 23. Next, as shown in FIG. 9, the cooling plate 31 or the like on which the first spacer 21 is placed is disposed immediately below the pressure application probe 33. The cooling plate 31 and the like are placed on the carrier table 53 (see FIG. 1).

  Next, as shown in FIG. 10, the precision servo press 35 is driven by the signal from the energization control unit 4 to lower the pressure plate 34 and the like, and the pressure energization probe 33 is brought into contact with the first spacer 21. . At this time, the pressurizing force of the pressurizing and energizing probe 33 is increased to a prescribed load value (25 kg to 100 kg). In addition, the temperature of the semiconductor element 11 is set to, for example, 150 ° C. or more and 230 ° C. or less.

Next, current flows from the energization power source 44 in the forward direction to the semiconductor element 11 through the first spacer 21 and the like. At this time, the current density is set to, for example, 120 A / cm ² or more and 400 A / cm ² or less.

When the temperature of the semiconductor element 11 deviates from a prescribed temperature range (150 ° C. or more and 230 ° C. or less), the energization with pressure is stopped. When the current density deviates from the specified current range (120 A / cm ² or more and 400 A / cm ² or less), it is determined that the semiconductor element 11 during the energization and pressurization is a defective product, and the pressurization and energization is performed. It is stopped.

  The semiconductor element 11 and the second spacer 23 may be welded in the test by the pressure application. The second spacer 23 and the first spacer 21 may be welded. The semiconductor element 11 and the third spacer 25 may be welded.

  When the test of the semiconductor element 11 by the pressurizing and energizing unit 3 is completed, the position where the separation unit 6 is disposed by the Y direction transfer mechanism 52 together with the transport table 53 with the cooling plate 31 etc. mounting the semiconductor element 11 (Y direction Transport to) (see Figure 1). Next, the separation unit 6 is transported by the X-direction transport mechanism 51 to a position (X direction) where the cooling plate 31 and the like are disposed (see FIG. 1).

  Next, as shown in FIG. 11, the separating portion 6 is lowered by the Z-direction transfer mechanism 54 (see FIG. 1) to set the suction pads 61a, 61b, 61c to the first spacer 21 or the second spacer 23. Make contact. At this time, the suction pad 61 a is brought into contact with the first spacer 21. The suction pad 61 b is brought into contact with one end of the second spacer 23. The suction pad 61 c is brought into contact with the other end of the second spacer 23. Next, suction by the suction pads 61a, 61b, 61c is simultaneously started.

  Next, as shown in FIG. 12, the distance (interval) between the suction pad 61a and the suction pad 61b is reduced by driving the cylinder 62a while maintaining the suction state by the suction pads 61a, 61b, 61c. By narrowing the distance between the suction pad 61a for suctioning the first spacer 21 and the suction pad 61b for suctioning one end of the second spacer 23, the second spacer 23 is deformed, and the second spacer 23 and the second spacer 23 are deformed. A gap is generated between the semiconductor device 11 and the semiconductor device 11.

  Next, as shown in FIG. 13, the cylinder 62b is further driven to reduce the distance (interval) between the suction pad 61a and the suction pad 61c. As the space between the suction pad 61a for suctioning the first spacer 21 and the suction pad 61c for suctioning the other end of the second spacer 23 is narrowed, the second spacer 23 is further deformed, and the second spacer 23 is formed. The gap between the semiconductor device 23 and the semiconductor element 11 further widens.

  Next, from the state in which a gap is generated between the second spacer 23 and the semiconductor element 11, for example, the side surface of the semiconductor element 11 is brought into contact with the positioning guide 32 to separate the semiconductor element 11 from the second spacer 23. Let The separated semiconductor element 11 falls onto the cooling plate 31. The first spacer 21 and the second spacer 23 are transported in a state of being adsorbed by the suction pads 61 a, 61 b and 61 c, and are collected in the spacer collection box 72.

  The third spacer 25 may be welded to the semiconductor element 11 dropped to the cooling plate 31. Next, as shown in FIG. 14, the third spacer 25 welded to the semiconductor element 11 is separated by the claws 69 a and 69 b. As shown in FIGS. 14 and 15, the third spacer 25 is provided with a protrusion 25a that protrudes in the surface direction from the semiconductor element 11 in a state where the semiconductor element 11 is mounted.

  As shown in FIG. 16, the positioning guide 32 is provided with a portion for exposing the projecting portion 25 a in a state where the semiconductor element 11 is dropped onto the cooling plate 31 (a state where the semiconductor element 11 is placed). The third spacer 25 is separated from the semiconductor element 11 by hooking the claws 69a and 69b to the projection 25a.

  As shown in FIG. 17, the claws 69a are brought into contact with the projections 25a on one end side of the third spacer 25, and the claws 69b are brought into contact with the projections 25a on the other end of the third spacer 25. Next, as shown in FIG. 18, the semiconductor element 11 is pulled upward with the claws 69a and 69b in contact with the projection 25a. This can be performed, for example, by adsorbing the suction pad 61 a to the semiconductor element 11.

  The semiconductor element 11 separated from the third spacer 25 is collected by the semiconductor element collection tray 71. On the other hand, the separated third spacer 25 is collected in the spacer collection box 72. Thus, a series of pressure application tests by the semiconductor test apparatus 1 are completed.

  In the semiconductor test apparatus 1 described above, by providing the separation portion 6, even when the second spacer 23 and the like are welded to the semiconductor element 11, the semiconductor element 11 and the semiconductor element 11 are not required. The second spacer 23 and the like can be separated automatically. Thereby, the time required for a series of pressure application tests including the operation of separating the semiconductor element 11 and the second spacer 23 can be shortened, which can contribute to the enhancement of production capacity and labor saving. .

  Conventionally, when the semiconductor element 11 and the second interlayer 23 or the like are welded, a pressure-sensitive adhesive tape having an adhesive force higher than the adhesive force at the time of welding is used to form the semiconductor element 11 and the second interlayer 23 or the like. Separation was being done. For this reason, when an adhesive tape was used, a mechanism for cutting and discarding the used portion was required so that the new surface of the adhesive tape could be used. In addition, a roller or the like is required to take out the new surface of the adhesive tape. In the semiconductor test apparatus 1 described above, the mechanism and the like become unnecessary, and the running cost can be suppressed.

  In addition, electric cylinders may be applied as the cylinders 62a and 62b of the separation unit 6 of the semiconductor test apparatus described above. In this case, the suction position by the suction pads 61a, 61b, 61c can be easily made according to the size of the target work (the semiconductor element 11 and the second spacer 23 etc.) suctioned and transported by the suction pads 61a, 61b, 61c. It can be changed. For this reason, there is no need to remodel the suction portion in the separation unit 6 to correspond to the size of the target work. In addition, it is not necessary to mount another separation unit corresponding to the size of the target work. As a result of these, space saving and cost reduction of the semiconductor test apparatus 1 can be achieved.

  Furthermore, the suction pads 61a, the suction pads 61b, and the suction pads 61c of the separation unit 6 may be disposed, for example, along the diagonal of the rectangular second spacer 23 shown in FIG. That is, the Y-direction position of the suction pad 61b is disposed on the negative side of the Y-direction position of the suction pad 61a, and the Y-direction position of the suction pad 61c is on the positive side of the Y-direction position of the suction pad 61a. It may be located at In this case, when the cylinders 62a and 62b operate, a force in the twisting direction is applied to the second spacer 23 so that a gap is easily generated between the semiconductor element 11 and the second spacer 23. it can. As a result, the semiconductor element 11 and the second spacer 23 and the like can be reliably separated.

  In the semiconductor test apparatus 1 described above, the case where both the cylinder 62a and the cylinder 62b are operated has been described, but even if only one of the cylinder 62a and the cylinder 62b is operated, the semiconductor element 11 and the second interlayer It can be separated from 23 mag.

  In the semiconductor test apparatus 1 described above, the case where the side surface of the semiconductor element 11 is in contact with the positioning guide 32 to separate the semiconductor element 11 from the second spacer 23 or the like has been described. There is no need to touch the sides of the. For example, when a sufficient gap is generated between the second spacer 23 and the semiconductor element 11, the semiconductor element 11 is easily separated from the second spacer 23 and falls onto the cooling plate 31. .

Second Embodiment
In the separation unit of the semiconductor test apparatus described above, the case where the suction pad is operated by the cylinder has been described. Here, an example of a semiconductor test apparatus provided with a separation unit that operates the suction pad with a motor, a gear, and the like will be described.

  As shown in FIG. 19, the separation unit 6 of the semiconductor test apparatus includes a pinion gear 64, a motor 65, racks 66a and 66b, a linear guide block 67, and a linear guide rail 68. The pinion gear 64 is rotated by the motor 65. The racks 66 a, 66 b are arranged to mesh with the pinion gear 64. The linear guide block 67 and the linear guide rail 68 are fixed to the racks 66a and 66b.

  The linear guide block 67 is fixed to the surface of the rack 66a, 66b opposite to the surface on which the teeth are disposed. The linear guide block 67 slides linearly (in the X direction) along the linear guide rail 37. The linear guide rails 37 are fixed to the racks 66a and 66b, for example, to extend in the X direction. The remaining structure is similar to that of the semiconductor test apparatus 1 shown in FIG. 1, and therefore, the same members are denoted by the same reference characters, and the description thereof will not be repeated unless necessary.

  Next, an example of the operation of the above-described semiconductor test apparatus will be described. As described above, the test of the semiconductor element 11 is performed by the pressure applying unit 3, and when the test is completed, the cooling plate 31 or the like on which the semiconductor element 11 is mounted is conveyed to a position directly below the separation unit 6 ( See Figure 19).

  Next, as shown in FIG. 19, the suction pad 61 a is brought into contact with the first spacer 21. The suction pad 61 b is brought into contact with one end of the second spacer 23, and the suction pad 61 c is brought into contact with the other end of the second spacer 23. Next, suction by the suction pads 61a, 61b, 61c is simultaneously started.

  Next, as shown in FIGS. 20 and 21, the pinion gear 64 is rotated by the motor 65 while maintaining the suction state by the suction pads 61a, 61b, 61c. As the pinion gear 64 rotates, the rack 66a slides in the X direction (positive), and the rack 66b slides in the X direction (negative). That is, the racks 66a and 66b slide in synchronization.

  By this operation, the suction pad 61b approaches the suction pad 61a, and the suction pad 61c approaches the suction pad 61a. The space between the suction pad 61b and the suction pad 61a is reduced, and the space between the suction pad 61c and the suction pad 61a is reduced, so that the second spacer 23 is deformed in the same manner as shown in FIG. A gap is generated between the second spacer 23 and the semiconductor element 11.

  Thereafter, in the same manner as the operation described above, for example, the side surface of the semiconductor element 11 is brought into contact with the positioning guide 32 to separate the semiconductor element 11 from the second spacer 23. Furthermore, the semiconductor element 11 is separated from the third spacer 25 by the claws. Thus, a series of pressure application tests by the semiconductor test apparatus 1 are completed.

  In addition to the effects described above, the following effects can be obtained in the semiconductor test apparatus described above. That is, in the separation unit 6, the rotation of the motor 65 can be converted to the sliding movement synchronized with the suction pad 61b and the suction pad 61c by the pinion gear 64 and the racks 66a and 66b. Thereby, the number of drive axes can be reduced as compared with the case where the suction pads 61b and the suction pads 61c are operated individually.

  The suction pad 61b and the suction pad 61c do not necessarily have to slide in synchronization with each other, and one of the suction pad 61b and the suction pad 61c is caused to slide first, and the other is caused to slide later. It is also good. For example, one linear guide rail 68 may be provided, and the suction pad 61b and the suction pad 61c may be slidingly operated with two stages asynchronously.

  Further, although the motor 65 is used as the drive source in the separation unit 6, instead of the motor, for example, a drive source such as a cylinder may be separately disposed to transmit the driving force by a roller chain or a belt.

  Furthermore, although the case where the second spacer 23 and the like are adsorbed by the suction pads 61a, 61b and 61c has been described, if the second spacer 23 and the like can be held, it is limited to the suction pads 61a, 61b and 61c. Instead, other holding parts may be used.

  The semiconductor test apparatus provided with the separation unit described in each embodiment can be variously combined as needed.

  The embodiment disclosed this time is an example and is not limited thereto. The present invention is not the scope described above, is shown by the claims, and is intended to include all modifications within the meaning and scope equivalent to the claims.

  The present invention is effectively utilized in a semiconductor test apparatus which applies a large direct current to a semiconductor element.

  DESCRIPTION OF SYMBOLS 1 semiconductor test apparatus, 2 bases, 3 pressurization electricity supply part, 4 electricity supply control parts, 5 transport parts, 6 separation parts, 7 collection parts, 11 semiconductor elements, 11a surface, 11b back surface, 12 front surface electrode, 13 back surface electrode, 21 1st spacer, 23 2nd spacer, 25 3rd spacer, 25a protrusion, 31 cooling plate, 31a protrusion, 32 positioning guide, 33 pressure application probe, 34 pressure plate, 35 precision servo press, 36 support 41 programmable logic controller 42 graphic operation terminal 43 press controller 44 power supply 45 power supply controller 51 X direction transfer mechanism 52 Y direction transfer mechanism 53 transport table 54 Z direction transfer mechanism 61a, 61b, 61c Suction pad, 62a, 62b cylinder, 63 air tube, 64 pini Ngia, 65 motor, 66a, 66b rack 67 linear guide blocks 68 linear guide rail, 69a, 69b claw portion, 71 the semiconductor device collecting tray, 72 between material collecting box.

Claims (14)

A pressure applying unit for performing an electrical test on the semiconductor element while pressing the semiconductor element having the first main surface and the second main surface facing each other through the spacer;
And a separation unit for separating the spacer from the semiconductor element;
The separation unit is
A holding unit for holding the spacer;
A position changing unit for separating the semiconductor element from the spacer by changing the position of the holding portion while holding the spacer and creating a gap between the spacer and the semiconductor element; Semiconductor test equipment equipped. The spacer is disposed to be in contact with the first main surface of the semiconductor element mounted on the pressure applying portion, and includes a first main surface side spacer having a longitudinal direction and a short direction. ,
In the separation unit,
The holding unit is
A first holding portion for holding a first position in the longitudinal direction of the first main surface side interspace material;
And a second holding portion for holding a second position separated by a first distance from the first position in the longitudinal direction of the first main surface side interspace material,
The semiconductor test apparatus according to claim 1, wherein the position change unit deforms the first main surface side interspace material by reducing the first distance. In the separation unit,
The holding unit is
In the longitudinal direction of the first main surface side interspace material, the second position is located on the opposite side across the first position, and is held at a third position spaced a second distance from the first position And a third holding unit
The semiconductor test apparatus according to claim 2, wherein the position changing unit deforms the first main surface side interspace material by reducing the second distance. The first main surface side interspace material is
A first main surface side interspace material first portion in contact with the semiconductor element;
The semiconductor test device according to claim 2, further comprising: a first main surface side interspace material second portion contacting the first main surface side interspace material first portion. The intermediate material is disposed to be in contact with the second main surface of the semiconductor element mounted on the pressure applying portion, and does not contact the second main surface of the semiconductor element by protruding from the semiconductor element Including a second main surface side interspace material having a protrusion,
The separation portion has a claw portion that is in contact with the protrusion of the intermediate material on the second main surface side,
In the separation portion, the semiconductor element held by the holding portion is separated from the second main surface side material while the claw portion is in contact with the protrusion of the second main surface side material. The semiconductor test device according to claim 1, wherein the second main surface side interspace material is separated from the semiconductor element by the step of:   The semiconductor test apparatus according to claim 1, wherein the position changing unit includes a mechanism that changes the position of the holding unit by a cylinder.   The semiconductor test apparatus according to claim 1, wherein the position changing unit includes a mechanism that changes the position of the holding unit by a rack and a pinion gear. The pressure applying unit is
A cooling plate on which the semiconductor element is mounted;
The semiconductor test apparatus according to claim 1, further comprising: a positioning guide disposed on the cooling plate to align the semiconductor element with the cooling plate.   The semiconductor test apparatus according to claim 1, further comprising an energization control unit configured to control energization of the semiconductor element.   The semiconductor test apparatus according to claim 1, further comprising: a transfer unit configured to transfer the semiconductor element from the pressure application unit to the separation unit.   The semiconductor test apparatus according to claim 1, further comprising a recovery unit configured to recover the semiconductor element and the spacer. In the semiconductor test apparatus, after performing an electrical test while pressing a semiconductor element having a first main surface and a second main surface facing each other through an interlayer, the semiconductor element is separated from the interlayer A method of separating semiconductor elements, comprising
As the spacer, an operation of disposing the spacer on the first major surface side of the semiconductor element on the first major surface side and holding the first position in the spacer on the first major surface side from the first position An operation of holding a second position separated by a distance;
The first main surface side interspace material is deformed by reducing the distance while holding the first position and the second position in the first main surface side interspace material. A method of separating a semiconductor device, comprising: an operation of separating the semiconductor device from the first main surface side interspace material by forming a gap between the first semiconductor device and the semiconductor device.   In the operation of holding the first position and the second position, a portion of the surface on the opposite side to the surface facing the first main surface of the semiconductor element holds the first main surface side interspace material. The method of separating a semiconductor device according to claim 12, wherein As the spacer, the second main surface side spacer in contact with the second main surface of the semiconductor element is locked, and the second main surface side spacer is held as the semiconductor element while holding the semiconductor element. The method for separating a semiconductor device according to claim 12, comprising an operation of pulling away from the semiconductor device.

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