JP2019079074A - Display device - Google Patents

Abstract

To provide a display device whose drive circuit is prevented from breakage, when a flexible panel is handled, or provide a display device having a simplified structure.SOLUTION: A display device comprises a first plate and a second plate, a first flexible substrate, a display portion, a second flexible substrate, and a third plate and a fourth plate. The display portion comprises a transistor, the first plate and second plate are provided spaced from each other, the third plate and fourth plate are provided spaced from each other, an area between the first plate and second plate overlaps an area between the third plate and fourth plate, the display portion has the function of bending between the first plate and second plate, and the display portion has the function of bending in a first direction.SELECTED DRAWING: Figure 9

Description

The present invention relates to a display device.

In recent years, with advances in digitization technology, provision modes have been adopted in which text information such as newspapers and magazines and image information are provided as electronic data. This type of electronic data is generally displayed on a display device provided with a personal computer (PC) or the like, and the content thereof is browsed.

However, display devices provided by PCs etc. are largely different from paper media such as newspapers and magazines, and there are differences in convenience such as difficulty in portability.

On the other hand, in order to eliminate the difference from the above-described paper medium, a flexible electronic paper has been proposed (see, for example, Patent Document 1). In the case where a display portion of flexible electronic paper is formed using an element such as a transistor, a circuit for driving the transistor needs to be provided. In this case, the circuit may be broken by bending the electronic paper. Also, it is conceivable that the bending of the electronic paper is limited by the drive circuit.

JP 2003-337353 A

An object of one embodiment of the disclosed invention is to provide a display device which reduces breakage of a drive circuit when handling a flexible panel. Alternatively, an object of one embodiment of the disclosed invention is to provide a display device with a simplified structure.

According to one embodiment of the disclosed invention, a flexible display panel having a display portion where a scan line and a signal line cross each other, a support which holds one end of the flexible display panel, and a support The display device includes a signal line drive circuit that outputs a signal to the signal line, and a scanning line drive circuit that is disposed on the flexible surface of the display panel in a direction substantially perpendicular to the support and that outputs a signal to the scan line.

In one embodiment of the disclosed invention, the scan line driver circuit may have a plurality of circuit portions, and the plurality of circuit portions may be display devices provided apart from one another.

In one embodiment of the disclosed invention, the display device may have a stress concentration region between a plurality of circuit portions.

In one embodiment of the disclosed invention, the scan line driver circuit and the signal line driver circuit may each include a transistor and a display device in which transistors included in the scan line driver circuit and transistors included in the signal line driver circuit have different structures.

In one embodiment of the disclosed invention, the channel layer of the transistor included in the scan line driver circuit may be a non-single crystal semiconductor, and the channel layer of the transistor included in the signal line driver circuit may be a single crystal semiconductor. .

In one embodiment of the disclosed invention, the display device may be amorphous silicon, microcrystalline silicon, polysilicon, or an oxide semiconductor.

In one embodiment of the disclosed invention, the display portion may be a display device including a transistor and in which the transistor included in the display portion and the channel layer of the transistor included in the scan line driver circuit are formed using the same material.

In one embodiment of the disclosed invention, the support portion may be a display device which has any one of a battery, an antenna, a CPU, and a memory in addition to the signal line driver circuit.

In the present specification and the like, a semiconductor device refers to any device that can function by utilizing semiconductor characteristics, and electro-optical devices, semiconductor circuits, and electronic devices are all included in the semiconductor device.

In the present specification and the like, the display device includes a light emitting device and a liquid crystal display device. The light emitting device includes a light emitting element, and the liquid crystal display device includes a liquid crystal element. A light-emitting element includes, in its category, an element whose luminance is controlled by current or voltage. Specifically, an inorganic EL (Electro L
uminescence) elements, organic EL elements, etc.

According to one embodiment of the disclosed invention, a durable display device can be provided with reduced breakage of the drive circuit.

According to one embodiment of the disclosed invention, the structure can be simplified and the cost of the display device can be reduced.

It is a figure explaining one form of a display. It is a figure explaining one form of a display. It is a figure explaining one form of a display. It is a figure explaining one form of a display. It is a figure explaining one form of a support part of a display. It is a figure explaining one form of a display. It is a figure explaining one form of a display. It is a figure explaining one form of a display. It is a figure explaining one form of a display. It is a figure explaining one form of a display. FIG. 5 is a diagram illustrating one mode of a display panel. FIG. 5 is a diagram illustrating one mode of a display panel. FIG. 5 is a diagram illustrating one mode of a display panel. FIG. 5 is a diagram illustrating one mode of a display panel. FIG. 7 illustrates one embodiment of a transistor that can be applied to a display device. FIG. 5 is a diagram illustrating one mode of a display panel.

Hereinafter, the embodiments will be described in detail with reference to the drawings. However, it is obvious for those skilled in the art that the invention is not limited to the description of the embodiments shown below, and that various changes in form and detail can be made without departing from the spirit of the invention disclosed in the present specification and the like. . Further, configurations according to different embodiments can be implemented in combination as appropriate. Note that in the structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals, and description thereof will not be repeated.

Note that the size, layer thickness, or region of each component shown in the drawings and the like of each embodiment may be exaggerated for clarity. Therefore, it is not necessarily limited to the scale.

In addition, terms such as "first", "second", "third" and the like used in the present specification are given to avoid confusion of components, and are not limited numerically. Note that.

Embodiment 1
In this embodiment, an example of a display device is described with reference to the drawings.

The display device described in this embodiment includes a flexible display panel having a display portion where a scan line and a signal line intersect, a support portion that holds one end portion of the flexible display panel, and a support portion. It has a signal line drive circuit which is provided and which outputs a signal to a signal line, and a scanning line drive circuit which is disposed on a flexible surface of the display panel in a direction substantially perpendicular to the support portion and which outputs a signal to a scan line.

FIG. 1 shows a case where a supporting portion 4308 is provided at one end portion of a display panel 4311 as an example of a display device. The specific configuration of the display device will be described below with reference to FIG.
Note that FIG. 1A shows a state in which the display device is in the horizontal direction, and FIG. 1B shows a state in which the display device is in the upright state.

The display device illustrated in FIG. 1 includes a display panel 4311 having a display portion 4301 and a display panel 431.
11, a supporting portion 4308 provided at one end of the scanning unit 11, scan line drive circuits 4321a and 4321b which perform display control of the display portion 4301, and a signal line drive circuit 43 which performs display control of the display portion 4301.
And 23).

The scan line drive circuits 4321 a and 4321 b are provided in the display panel 4311, and the signal line drive circuit 4323 is provided in the support portion 4308.

The display panel 4311 can have a flexible structure. In this case, a pixel circuit forming the display portion 4301 on a flexible substrate such as plastic, and a scanning line driving circuit 4
321a and 4321b may be provided.

The support portion 4308 preferably has a structure which is less likely to be bent (high in rigidity) than at least the display panel 4311. As an example, a housing constituting the support portion 4308 is a display panel 43.
It can be formed of plastic or metal thicker than 11. In this case, the display device can be configured to be bent (curved) at a portion other than the support portion 4308.

Further, a place where the support portion 4308 is provided is not particularly limited.
A support 4308 can be provided along one end of 11. For example, as illustrated in FIG. 1, in the case where the display panel 4311 has a rectangular shape, the support portion 4308 can be provided along a predetermined side (for fixing one side). Here, the rectangular shape also includes the case where the corner is rounded.

The signal line drive circuit 4323 is provided inside the support portion 4308. For example, the support 430
8 is provided in a hollow columnar or cylindrical housing, and the hollow portion is provided with a signal line drive circuit 432.
Three can be provided. By providing the signal line driver circuit 4323 inside the support portion 4308, breakage of the signal line driver circuit 4323 due to bending of the display panel 4311 can be prevented.

Further, as shown in FIG. 1, the scanning line driving circuits 4321 a and 4321 b are connected to the display panel 431.
In 1, it is preferable to provide at both ends in a direction substantially parallel to the support 4308. Accordingly, wiring routing can be reduced and the structure can be simplified as compared to the case where the scan line driver circuit and the signal line driver circuit are provided at one place (for example, the support portion 4308).

In addition, by forming the scan line driver circuits 4321 a and 4321 b and the pixel circuits forming the display portion 4301 on a flexible substrate in the same process, the scan line drive circuit 4321 a,
While being able to curve 4321b, cost reduction can be achieved.

The pixel circuit and the scan line driver circuits 4321a and 4321b which form the display portion 4301 can be formed using thin film transistors or the like. On the other hand, a circuit operating at high speed such as the signal line driver circuit 4323 or the like is formed using an IC (Integrated Circuit) formed using a semiconductor substrate such as silicon or an SOI substrate, and the IC is provided inside the support portion 4308. It can be provided.

As described above, an IC provided with a circuit for operating at high speed such as a signal line driver circuit is provided inside a support portion, and a pixel circuit constituting a scan line driver circuit and a display portion is a thin film transistor or the like over a flexible substrate. In addition to the case where the signal line driver circuit and the scan line driver circuit are provided by an IC, the display panel can be easily curved and the display panel is bent.
It is possible to suppress the destruction of C and to further reduce the cost. Further, by providing the scan line driver circuit at an end portion in a direction substantially perpendicular to the support portion in the display panel, wiring can be prevented and the structure can be simplified.

Note that FIG. 1 shows the case where the scan line drive circuit is formed at both ends of the display panel 4311, but only at one end (only one of the scan line drive circuit 4321a and the scan line drive circuit 4321b) It may be provided.

This embodiment can be implemented in appropriate combination with the structures described in the other embodiments.

Second Embodiment
In this embodiment mode, a specific structure of the display device shown in FIG. 1 will be described with reference to the drawings. Note that the configuration described in this embodiment mode is common to that of Embodiment Mode 1 in many parts. Therefore, in the following, the description of the overlapping parts is omitted, and different points will be described in detail.

First, an example of a specific configuration of the display device will be described with reference to FIG. Figure 2 (
A) shows a plan view of the display device, and FIG. 2 (B) shows a cross section between A1 and B1 in FIG. 2 (A),
FIG. 2 (C) shows a detailed schematic view of the cross section.

In the display device illustrated in FIG. 2, a support portion 4308 is formed of a hollow housing, and a signal line driver circuit 4323 is provided in the housing. Here, the signal line driver circuit 4323 is an IC.
And the IC is provided inside the support 4308. The IC can be formed using a semiconductor substrate of silicon or the like, an SOI substrate, or the like. Needless to say, circuits other than the signal line driver circuit (eg, a CPU, a memory, and the like) can be provided in the IC.

Further, in FIG. 2, the IC provided inside the support portion 4308 is TAB (Tape Aut).
FPC (Flexible Printe) using omated bonding method
d Circuit) is shown. More specifically, the signal line driver circuit 4323 which controls the display portion 4301 is provided over the FPC 4324, and the FPC 4324 is electrically connected to the printed substrate 4325.

Further, as shown in FIG. 2, the printed circuit board 4325 can be provided in contact with the support portion 4308.

In the case where the signal line driver circuit 4323 is provided over the FPC 4324, a stress concentration region 4326 is preferably provided in the display panel 4311. By providing the stress concentration region 4326 in the display panel, stress applied to the FPC 4324 can be reduced when the display panel 4311 is bent, and breakage of the signal line driver circuit 4323 provided over the FPC 4324 can be suppressed.

In addition, a stress concentration area | region means the area | region which the stress concentration is formed of the deformation | transformation of the member by a cut | notch etc., and the change of the strength with respect to bending by extension of a member, etc. Specifically, a stress concentration region 4326 can be formed by providing a cut portion (a recessed portion, a groove) in a portion to be bent of the display panel 4311.

For example, the display panel 4311 is formed using the element substrate 4331 and the sealing substrate 4332,
A cut portion can be provided in one or both of the element substrate 4331 and the sealing substrate 4332. FIG. 2 shows a case where a stress concentration region 4326 is formed by providing a cut portion in the sealing substrate 4332. In the structure shown here, the element substrate 433
In FIG. 1, a pixel circuit for driving the display portion 4301 and scan line driver circuits 4321a and 4321b are formed, and these circuits and the FPC 4324 can be electrically connected.

Note that in the display portion 4301, pixels are arranged (arranged) in a matrix, and scanning lines 43 are formed.
61, the signal lines 4362 are arranged to be orthogonal. Note that the arrangement of pixels includes the case where the pixels are arranged in a straight line or in a jagged line in the vertical direction or the horizontal direction. Thus, for example, in the case where stripes are arranged or when dots of three color elements are arranged in a delta, the scanning lines 4361 and the signal lines 4362 are arranged according to the arrangement of the pixels.

The stress concentration region 4326 may be provided along the direction in which the display panel 4311 is to be bent. For example, in FIG. 2A, the direction in which the display panel 4311 is bent can be controlled by providing a cut portion from the upper end to the lower end of the display panel 4311 along a direction substantially parallel to the support 4308 (perpendicular to the support 4308 Signal line driving circuit 4 provided on the FPC 4324).
The destruction of H.323 can be suppressed.

The stress concentration region 4326 can be provided inside or outside of the support 4308.
For example, in the case where the support portion 4308 is provided to be close to the display panel 4311, a stress concentration region 43 is provided outside the support portion 4308 (for example, between the support portion 4308 and the display portion 4301).
Preferably, 26 is provided.

Next, a configuration of a display device different from that in FIG. 2 will be described with reference to FIG. 3A shows a plan view of the display device, FIG. 3B shows a cross section taken along the line A2-B2 in FIG. 3A, and FIG.
) Shows a detailed schematic view of the cross section.

FIG. 3 illustrates a case where an IC in which the signal line driver circuit 4323 is formed is mounted on the display panel 4311 using a COG (Chip On Glass) method. More specifically,
A signal line driver circuit 4323 which controls the display portion 4301 is provided over an element substrate 4331 which constitutes the display panel 4311, and the signal line driver circuit 4323 is electrically connected to the printed substrate 4325 through the FPC 4324.

When the signal line driver circuit is provided on the display panel as shown in FIG. 3, it is preferable to provide a stress concentration region 4326 in the display panel 4311 as in FIG. In this case, the stress concentration region 4326 is provided in a region different from the region in which the signal line driver circuit 4323 is provided (a region avoiding the region in which the signal line driver circuit 4323 is provided). For example, when provided on the sealing substrate 4332 side, stress applied to the signal line driver circuit 4323 can be reduced when the display panel 4311 is bent, and destruction of the signal line driver circuit 4323 can be suppressed.

Next, a configuration of a display device different from those in FIGS. 2 and 3 will be described with reference to FIG. Figure 4 (A
4A shows a plan view of the display device, FIG. 4B shows a cross section between A3 and B3 in FIG. 4A, and FIG. 4C shows a detailed schematic view of the cross section.

FIG. 4 shows a case where an IC provided with a circuit such as a signal line driving circuit is provided on a printed substrate, and the printed substrate and the display panel are connected using an FPC. More specifically, the signal line driver circuit 4323 for controlling the display portion 4301 is provided over the printed substrate 4327, and the display panel 4311 and the signal line driver circuit 4323 are electrically connected to each other through the FPC 4324.

In FIG. 4, since the display panel 4311 can be bent by the FPC 4324, the display panel 4311 can be provided with no stress concentration region.

Next, an example of the structure of the supporting portion 4308 and a circuit which can be provided in the supporting portion 4308 will be described with reference to FIG.

In FIG. 5, the case where the support 4308 incorporates the display control unit 200 including the signal line drive circuit will be described. These circuits can be formed using an IC formed using a semiconductor substrate such as silicon or an SOI substrate.

The display control unit 200 includes a CPU 201, a storage unit 203, a power supply unit 205, and a power supply circuit 207.
The video signal generation circuit 215, the signal line drive circuit 4323, the operation unit 219, and the like can be provided. Also, each configuration can be connected via an interface or the like. In addition, the display control unit 200 is electrically connected to the display panel 4311. Here, the case where the operation unit 219 is provided in the support unit 4308 is shown.
It can also be provided on 311.

The CPU 201 controls the overall operation of the display device.

The data input unit 211 receives information to be displayed on the display unit 4301 from an external device. The data input unit 211 may have an antenna 216 in order to transmit and receive data with an external device. In this case, the data input unit 211 has a function of transferring data received by the antenna 216 and data stored in the recording medium (external memory 213) to the internal memory 209.

The storage unit 203 can be configured to have an internal memory 209, a data input unit 211, and an external memory 213. Internal memory 209, data input unit 211 and external memory 213
Can record information to be displayed on the display portion 4301, a program for operating the display device, and the like.

The internal memory 209 is a program for processing by the CPU 201 a signal to be output to the video signal generation circuit 215 and / or the power supply circuit 207 based on signals from the power supply unit 205, the operation unit 219, etc. It has a storage unit for storing transferred data and the like. As an example of the internal memory 209, a dynamic random access memory (DRAM) is used.
ess Memory), SRAM (Static Random Access Me)
mory), mask ROM (Read Only Memory), PROM (Prog)
It is configured by a readable read only memory (RAM) or the like.

The external memory 213 may be a storage medium such as an IC card or a memory card.

The power supply unit 205 is configured of a secondary battery, a capacitor and the like. The secondary battery can be miniaturized by using, for example, a lithium battery, preferably a lithium polymer battery using a gel electrolyte, a lithium ion battery or the like. Of course, any rechargeable battery is acceptable.
It may be a chargeable / dischargeable battery such as a nickel hydrogen battery, a nickel hydride battery, an organic radical battery, a lead storage battery, an air secondary battery, a nickel zinc battery, a silver zinc battery and the like. As a capacitor,
Electric double layer capacitors, lithium ion capacitors, and other large capacity capacitors can be used. The capacitor is preferable because the deterioration is small even if the number of times of charge and discharge increases, and the rapid charge characteristics are also excellent. As the shape of the power supply unit 205, a sheet, a column, a prism, a plate, a coin, or the like may be appropriately selected.

In addition, the power supply unit 205 can be configured to be supplied with power wirelessly. In this case, the feeding portion 205 may be provided with an antenna.

The power supply circuit 207 is a circuit for controlling power supply to display elements in order to perform display and non-display of the display panel 4311 according to control of the CPU 201.

The operation unit 219 can be provided by a keyboard, an operation button, or the like. In addition, the operation unit 219
When the display portion 431 is provided as a touch display,
The display unit can function as an operation unit.

Although FIG. 5 shows the configuration in which the display control unit 200 is built in the support unit 4308, a so-called power device such as a switching power supply or a DC-DC converter may be further provided.

Further, in the display device shown in FIG. 5, power supply input and display switching can be performed by operating the operation unit 219. In addition, the display portion 4301 may be a touch display, and the display portion 4301 may be operated by touching the display portion 4301 with a finger, an input pen, or the like.

As described above, by incorporating the display control unit 200 in the support unit 4308, the display control unit 200 can be protected by the housing. In addition, the display device can be thin.

Note that in Embodiment Modes 1 and 2, the display panel 4311 includes the scan line driver circuit 4321a.
, 4321b are provided along the display portion 4301, but the invention is not limited to this.

For example, as illustrated in FIG. 6A, in the display panel 4311, the scan line driver circuit 432 can be used.
1a and 4321b can be provided to be separated from the support portion 4308 as compared to the display portion 4301. Generally, the elements constituting the scan line driver circuits 4321a and 4321b are provided collectively from the elements constituting the pixel circuit, so the scan line driver circuits 4321a and 4321b are separated from the portion where the display panel 4311 is bent. With the provision, damage to the scan line driver circuits 4321a and 4321b can be suppressed.

Further, as shown in FIGS. 6B and 6C, the scan line driver circuits 4321a and 4321b can be divided into a plurality of circuit portions, and the plurality of circuit portions can be provided separately from each other.
Thus, even when the display panel 4311 is bent, the scanning line driving circuit 4321 can be used.
The stress applied to a, 4321 b can be reduced, and damage to the scan line driver circuits 4321 a, 4321 b can be suppressed. In FIG. 6B, the scan line driver circuits 4321a and 4321b are each divided into two circuit portions, and in FIG. 6C, the scan line driver circuits 4321a and 4321b are provided.
Although the case is shown in which each of the four circuit units is provided separately, the number of divisions is not limited to this.

Further, as shown in FIG. 6D, the display panel 4311 may be provided at only one end portion (only one of the scan line driver circuit 4321a and the scan line driver circuit 4321b). This makes it possible to narrow the frame of the display device.

This embodiment can be implemented in appropriate combination with the structures described in the other embodiments.

Third Embodiment
In this embodiment, when using a display device having a flexible display panel by bending and using, an example of effects of the above embodiment is described, and will be described with reference to FIGS.

First, in FIG. 7A, a front plan view when the user uses the display device, FIG.
In the above, a top plan view when the user uses the display device is shown and described.

The display device illustrated in FIG. 7A includes a display panel 4311 and a support portion 4308. The display panel 4311 has a display portion 4301. The display portion 4301 controls display by a scanning line drive circuit 4321 which supplies a scanning signal to the display portion 4301 and a signal line drive circuit 4323 which supplies an image signal to the display portion 4301. Will be done. In FIG. 7A, the user's hand 4
The state of holding the support 4308 by 350 is also illustrated. Figure 7 (
In the front plan view shown in A), the line of sight when viewing the top plan view shown in FIG. 7 (B) is additionally described.

A top plan view illustrated in FIG. 7B illustrates the display panel 4311 and the support portion 4308. As shown in FIG. 7B, when the user uses the display device with the hand 4350, the flexible display panel has a bent portion (hereinafter referred to as a bent portion) in the range of the arrow shown in C in the drawing. C) and a non-bent portion (hereinafter referred to as a non-bent portion D) in the range of the arrow shown in D in the figure.

In FIG. 7B, as an example, with respect to the bent portion C and the non-bent portion D of the first display panel 4311, the side close to the support portion 4308 is a bent portion C, which is separated from the support portion 4308 The side is described as an unbent portion D. The positions of the bending portion C and the non-bending portion D differ in the way of bending the display panel according to the configuration of the support portion 4308 and the material of the substrate constituting the display panel. Therefore, with respect to the bent portion C and the non-bent portion D of the display panel 4311, the side away from the support portion 4308 may be the bent portion C, and the side close to the support portion 4308 may be the non-bent portion D.

Note that since the display device has a structure in which the display panel is fixed by the support portion 4308, a direction (vertical arrow 7001 in the back (or forward) direction in FIG. 7B) extends in a direction in which the support 4308 extends. 7 (B) in the display panel 4311 which becomes the middle arrow 7002, the bent portion C, the non-bent portion D
Will be formed. Therefore, by arranging the signal line driver circuit 4323 as described above, bending in a direction perpendicular to the support portion 4308 is possible and breakage can be prevented. In addition, by providing the scan line driver circuit 4321 at the end portion of the display panel 4311 in a direction substantially parallel to the support portion 4308, manufacturing can be performed in the same process as the display portion, so cost reduction can be achieved. Wiring routing to the display portion can be reduced as compared to the case where the support portion 4308 is provided. In addition, the bending part C and the non-bending part D may be formed in multiple numbers, and may be formed alternately. Further, a stress concentration region may be provided on the display panel, and the bent portion C and the non-bent portion D may be artificially formed.

Next, in FIGS. 8A to 8C, as in FIG. 7A, a front plan view when the display device is used is shown, and scan line drive for the bent portion C and the non-bent portion D is shown. The arrangement of the circuit 4321 will be described.

In FIG. 8A, the side close to the support portion 4308 is referred to as a bent portion C, and the side away from the support portion 4308 is referred to as an unbent portion D. Therefore, the scanning line driving circuit 4321 is provided in the non-bent portion D on the side away from the support portion 4308, respectively. Note that the scan signal may be supplied to the pixel TFT 4352 in the display portion by drawing a wire extending from the scan line driver circuit 4321 to each scan line of the display portion. Note that supply of a control signal such as a clock signal for driving the scan line driver circuit 4321 is performed through a wire extending from a video signal generation circuit in the support portion 4308. Wirings for electrical connection between circuits are formed by fine processing of a metal film or the like, and a semiconductor film of a transistor constituting the scan line driving circuit is formed of a semiconductor material such as a silicon film. The metal film is superior in ductility and smaller in damage due to bending than a semiconductor material. Therefore, a wire connected to the scanning line drive circuit is disposed at a portion corresponding to the bent portion C, and a transistor constituting the scanning line drive circuit is disposed at a portion corresponding to the non-bent portion D. Damage to the semiconductor film can be reduced. As a result, by arranging the scan line driver circuit 4321 as shown in FIG. 8A, circuit damage can be suppressed when the user uses the display device with the hand 4350.

FIG. 8B shows a configuration in which bent portions C and non-bent portions D are alternately provided toward the side away from the side close to the support portion 4308. Therefore, in the arrangement of the scanning line driving circuit 4321, the driving circuit is divided into a plurality of parts in the non-bent portion D and provided to be separated from each other.
Note that the scan signal is supplied to the pixel TFT 4352 in the display portion by the scan line driver circuit 432.
It may be done by drawing a wire extending from 1). A control signal such as a clock signal for driving the scanning line drive circuit 4321 is performed through a wire extending from the video signal generation circuit in the support portion 4308. Further, a signal propagating between pulse signal generating circuits such as flip flops constituting a scanning line driving circuit is performed through a wire. Wirings for electrical connection between circuits are formed by fine processing of a metal film or the like, and a semiconductor film of a transistor constituting the scan line driving circuit is formed of a semiconductor material such as a silicon film. The metal film is superior in ductility and smaller in damage due to bending than a semiconductor material. Therefore, a wire connected to the scanning line drive circuit is disposed at a portion corresponding to the bent portion C, and a transistor constituting the scanning line drive circuit is disposed at a portion corresponding to the non-bent portion D. Damage to the semiconductor film can be reduced. Further, in FIG. 8B, the driver circuit is divided into a plurality and separated from each other, and stress applied to the scanning line driver circuit can be dispersed when the driver circuit is bent. As a result, by arranging the scan line driver circuit 4321 as shown in FIG. 8B, when the user uses the display device with the hand 4350, circuit damage can be suppressed more effectively.

Note that in FIG. 8B, the scan line driver circuits 4321 are provided above and below the display portion as the scan line driver circuits 4321a and 4321b, and a redundant structure or a function of outputting a scan signal is dispersed. It may be configured to FIG. 8C is a diagram in which the configuration described in FIG. 8B is disposed above and below the display panel. A scan signal supplied to the pixel TFT 4352 is vertically arranged by the scan line drive circuit 4321a and the scan line drive circuit 4321b and supplied, thereby reducing pulse signal generation circuits such as flip flops forming the scan line drive circuit. Therefore, when the user uses the display device with the hand 4350, circuit damage can be suppressed.

In the above FIGS. 8B and 8C, by showing a specific example, the scanning line driving circuit is not disposed in the area to be the bent portion C, and the scanning line is driven to the area to be the non-bending portion D. The advantages of placing the circuit are described. With this structure, stress applied to the scan line driver circuit can be dispersed when it is bent, and when the user uses the display device with the hand 4350, breakage of the circuit can be suppressed.

Next, as described in FIGS. 8B and 8C, the scanning line driving circuit is divided into a plurality of parts, and when provided separately from each other, the bent portion C and the non-bent portion D in the display panel are artificially An example of providing a stress concentration region for formation will be described with reference to FIGS. 9A is a plan view of the display device, and FIGS. 9B and 9C are examples of cross-sectional views taken along line E1-F1 in FIG. 9A. 10 (A) shows a plan view of the display device, and FIGS. 10 (B) and 10 (C).
These are examples of sectional drawing between E2-F2 of FIG. 10 (A).

FIG. 9A shows a display panel 4311, a support portion 4308, a display portion 4301, a scan line driver circuit 4321, and a signal line driver circuit 4323. The scan line driver circuit 4321 is illustrated as being divided into two circuit portions, and provided so as to be separated from each other through a wiring 920. The stress concentration region 921 is preferably formed to overlap with the wiring 920. Figure 9 (B)
Shows a cross-sectional view in the direction perpendicular to the support portion. In a stress concentration region 921 overlapping the wiring 920, the cut portion 922a is provided in the sealing substrate 923, and the cut portion 922b is provided in the element substrate 924 as an example. Just do it. As shown in FIG. 9C, the element substrate 92
By attaching a reinforcing plate 925 to the scanning line drive circuit 4321 of the fourth and the sealing substrate 923,
The cut portion 922a and the cut portion 922b may be formed. Note that the cut portion 922a and the cut portion 922b may be provided in parallel with the long axis direction of the support portion 4308, or may be provided in only a part.

The stress concentration region is a stress concentration region that is formed by deformation of a member due to a cut or the like, or change in strength against bending or extension due to attachment of a member or the like.

Note that the division of the scanning line driving circuit means a state in which a region where a circuit element such as a TFT and a wiring are mixed to form a repetitive layout is divided by a region that is used for wiring.

10A, similarly to FIG. 9A, the display panel 4311, the support portion 4308, the display portion 4301, the scan line driver circuit 4321, and the signal line driver circuit 4323 are shown.
The scan line driver circuit 4321 is divided into four circuit portions and provided to be separated from each other through a wiring 920. The stress concentration region 921 is preferably formed to overlap with the plurality of wirings 920. FIG. 10B shows a cross-sectional view in the direction perpendicular to the support portion, and in a stress concentration region 921 overlapping with the wiring 920, a plurality of cut portions 922a in the sealing substrate 923.
The plurality of cut portions 922 b may be provided in the element substrate 924 as an example. Note that as shown in FIG. 10C, the scan line driver circuit 43 of the element substrate 924 and the sealing substrate 923 is provided.
The plurality of cut portions 922a and the plurality of cut portions 922b may be formed by attaching a reinforcing plate 925 on the surface 21. Note that the plurality of cut portions 922a and the plurality of cut portions 922b may be provided in parallel with the long axis direction of the support portion 4308, or may be provided in only a part.

Note that the division number of the scanning line drive circuit shown in FIGS. 9 and 10 is an example for explanation, and it may be appropriately divided into any number.

As described above, with the configuration of this embodiment, breakage of the scan line driver circuit can be suppressed more effectively when the display device is used. Further, according to the configuration of the present embodiment, damage to the scanning line driving circuit can be more effectively suppressed by providing a stress concentration region such as a cut portion in advance in the display panel.

This embodiment can be implemented in appropriate combination with the structures described in the other embodiments.

Embodiment 4
In this embodiment, an example of a display panel provided in a display device is described. The display panel can be a display panel having various display elements, and may be either passive matrix type or active matrix type.

As the display panel, electronic paper, a light emitting display panel (EL (electroluminescence) panel), a liquid crystal display panel, or the like can be used. The display panel is a panel in which the display element is sealed, and a connector, for example, an FPC (Flexible pri-
nted circuit) or TAB (Tape Automated Bond)
ing) Tape or TCP (Tape Carrier Package) is attached and electrically connected to an external circuit including a signal line driving circuit. The signal line driver circuit IC may be directly mounted on the display panel by a COG (Chip On Glass) method.

The display panel 4311 may be a double-sided display type in which display is performed on both sides or a single-sided display panel in which display is performed only on one side. As the double-sided display panel, a double-sided injection display panel may be used, or a single-sided injection display panel may be used in combination. In addition, two liquid crystal display panels in which a backlight (preferably, a thin EL panel) is interposed therebetween may be used.

Examples of double-sided display panels that can be applied to the display panel 4311 are shown in FIGS. In FIGS. 11A to 11C, the arrows indicate the light emission direction (viewing side).

11A shows a display panel 431 in which the display element 102 is sandwiched between the substrate 100 and the substrate 101.
3 and the first display portion 4302 on the substrate 100 side and the second display portion 4310 on the substrate 101 side.
Is provided. By the display element 102, the first display portion 4302 and the second display portion 4 can be provided.
Since 310 is displayed, the substrate 100 and the substrate 101 have translucency. Display element 102
It is preferable to use an EL element which is a self-luminous light emitting element. Note that the display panel 4313
When light incident on the light source is used, a liquid crystal display element or an electrophoretic display element can also be used as the display element 102.

FIG. 11B illustrates a display panel 4313 in which a single-sided display panel including the display element 114 sandwiched between the substrate 110 and the substrate 112 and a single-sided display panel including the display element 115 sandwiched between the substrate 111 and the substrate 113 are stacked. And the first display portion 4302 on the side of the substrate 110, the substrate 1
A second display unit 4310 is provided on the 11 side. Since the first display portion 4302 is displayed by the display element 114 and the second display portion 4310 is displayed by the display element 115, the substrate 110 and the substrate 111 have translucency. On the other hand, the substrate 112 and the substrate 113 do not have to be light transmitting, and may be reflective. The single-sided display panels
2 and the substrate 113 may be adhered and bonded by an adhesive layer. Alternatively, only one of the substrate 112 and the substrate 113 may be used.

As the display element 114 and the display element 115, EL elements are preferably used. Note that in the case of using light incident on the display panel 4313, a liquid crystal display element or an electrophoretic display element can also be used as the display element 114 and the display element 115. In order to improve the light extraction efficiency, it is preferable to use a reflective display panel as a single-sided display panel.

A backlight may be provided between the light-transmissive liquid crystal display panels to be a display panel 4313. FIG. 11C shows a light-transmissive liquid crystal display panel including a display element 124 sandwiched between a substrate 120 and a substrate 122, and a light-transmissive liquid crystal display panel including a display element 125 sandwiched between a substrate 121 and a substrate 123. A display panel 4313 is stacked with a backlight 126 serving as a light source, and a first display portion 4302 is provided on the substrate 120 side and a second display portion 4310 is provided on the substrate 121 side. The light of the backlight 126 and the first display portion 430 by the display element 124
2 is displayed, and the second display portion 431 is displayed by the light of the backlight 126 and the display element 125.
Since 0 is displayed, the substrate 120, the substrate 121, the substrate 122, and the substrate 123 have translucency.

Note that the single-sided display panel and the backlight may be attached and attached by an adhesive layer. Alternatively, only one of the substrate 122 and the substrate 123 may be used. It is preferable to use a thin EL panel as the backlight 126 because the display panel 4313 can be thinned.

In the case of using a single-sided display panel, it is preferable to provide a non-light-transmitting or reflective housing on a surface where the display portion is not provided because the strength of the display panel can be improved.

One mode of the display panel is described with reference to FIGS. 12 to 14 and 16. 12 to 14 and FIG. 16 correspond to cross-sectional views taken along the line M-N in FIG. 12 to 1.
4 and FIG. 16 each show an example in which an FPC 4324 is attached to a display portion 4301 having a pixel circuit and a display panel 4311 having a scan line driver circuit 4321a.
The display portion 4301 and the scan line driver circuit 4321 a which are provided above are sealed with a sealing substrate 4332 by a sealant 4005.

As shown in FIG. 12 to FIG. 14 and FIG.
5 and the terminal electrode 4016, and the connection terminal electrode 4015 and the terminal electrode 4016 are F
It is electrically connected to the terminal of the PC 4324 through the anisotropic conductive film 4019.

The connection terminal electrode 4015 is formed of the same conductive film as the first electrode layer 4030.
The conductive film 016 is formed of the same conductive film as the source and drain electrode layers of the thin film transistors 4010 and 4011.

Further, as shown in FIG. 4, the signal line driver circuit 4323 formed of a single crystal semiconductor film or a polycrystalline semiconductor film on a separately prepared substrate is mounted by FPC and provided in a support portion 4308. . Signal line driver circuit 4323, scan line driver circuit 4321a, and display portion 430
Various signals and potentials given to 1 are supplied from the FPC 4324.

Note that a connection method of the signal line driver circuit 4323 is not particularly limited, and a COG method, a wire bonding method, a TAB method, or the like can be used.

Further, a display portion 4301 provided over the element substrate 4331 and a scan line driver circuit 4321 a
A plurality of thin film transistors are included, and in FIGS. 12 to 14 and 16, the display portion 430 is shown.
A thin film transistor 4010 included in 1 and a thin film transistor 4011 included in the scan line driver circuit 4321a are illustrated. Insulating layers 4020 and 4021 are provided over the thin film transistors 4010 and 4011, respectively. Note that the insulating film 4023 is an insulating film which functions as a base film.

The thin film transistors 4010 and 4011 are not particularly limited, and various thin film transistors can be applied. In FIG. 12 to FIG. 14 and FIG.
An example using a reverse stagger thin film transistor with a bottom gate structure is shown as 011. Although the thin film transistors 4010 and 4011 are channel-etched, a channel protective reverse stagger thin film transistor in which a channel protective film is provided over a semiconductor layer may be used.

The thin film transistor 4010 provided in the display portion 4301 is electrically connected to a display element to form a display panel. The display element is not particularly limited as long as it can display, and various display elements can be used.

Electronic paper can be used as the display panel. In electronic paper, there are many systems in various combinations such as utilization of electric field, magnetic field, light or heat as image writing means, and utilization of change of shape or position or utilization of physical change for change of display medium. For example, a twist ball system, an electrophoresis system, a powder system system (also called a toner display), a liquid crystal system, etc. may be mentioned.

FIGS. 12 and 16 show an example in which an active matrix electronic paper is used as the display panel 4311. Electronic paper has the same readability as paper, lower power consumption than other display panels, and can be thin and light in shape.

FIGS. 12A and 12B and 16 illustrate active matrix electronic paper as an example of a display panel.

The electronic paper in FIG. 12A is an example of a display device using a twisting ball display system.
In the twisting ball display system, spherical particles white and black are separately disposed between electrode layers used in a display element, and a potential difference is generated between the electrode layers to control the direction of the spherical particles.
It is a method of displaying.

A black region 4615 a and a white region 4615 b are provided between the first electrode layer 4030 connected to the thin film transistor 4010 and the second electrode layer 4031 provided on the sealing substrate 4332, and liquid is filled around the region. A spherical particle 4613 including a cavity 4612 is provided, and the periphery of the spherical particle 4613 is filled with a filler 4614 such as a resin. The second electrode layer 4031 corresponds to a common electrode (counter electrode). The second electrode layer 4031 is electrically connected to the common potential line.

Also, instead of the twisting ball, an electrophoretic element can be used. An example of using an electrophoretic element as a display element is illustrated in FIG. A microcapsule 4713 with a diameter of about 10 μm to 200 μm in which a transparent liquid 4712, black particles 4715a negatively charged as first particles, and white particles 4715b positively charged as second particles are enclosed is used.

A microcapsule 47 provided between the first electrode layer 4030 and the second electrode layer 4031
13, when an electric field is applied by the first electrode layer 4030 and the second electrode layer 4031,
White particles 4715b and black particles 4715a move in opposite directions to display white or black. A display element to which this principle is applied is an electrophoretic display element. The electrophoretic display device has a high reflectance, so that an auxiliary light is unnecessary, and the power consumption is small, and the display portion can be recognized even in a dim place. In addition, even when power is not supplied to the display unit, it is possible to hold the image once displayed, so even when the display panel is moved away from the radio wave source, the displayed image is stored. It will be possible to

The first and second particles contain a dye and do not move in the absence of an electric field. In addition, the colors of the first particle and the second particle are different (including colorlessness).

What disperse | distributed the said microcapsule in the solvent is what is called an electronic ink, and this electronic ink can be printed on surfaces, such as glass, a plastics, cloth, paper. In addition, color display is also possible by using particles having a color filter or a pigment.

The first particles and the second particles in the microcapsules are a conductor material, an insulator material,
A kind of material selected from a semiconductor material, a magnetic material, a liquid crystal material, a ferroelectric material, an electroluminescent material, an electrochromic material, a magnetophoretic material, or a composite material of these may be used.

Moreover, it is also possible to use electronic powder fluid (trademark) as a powder type system. An example using an electronic powder fluid as a display element is shown in FIG. First electrode layer 4030, second electrode layer 403
1 and a space 4812 divided by ribs 4814, black powder fluid 4815a positively charged
And the negatively charged white powder fluid 4815b. The space 4812 is air.

When an electric field is applied by the first electrode layer 4030 and the second electrode layer 4031, the black powder fluid 4815a and the white powder fluid 4815b can move in opposite directions to display white or black. Color powder such as red, yellow and blue may be used as the powder fluid.

In addition, as the display element, a light emitting element (EL element) using electroluminescence may be used. A light emitting element utilizing electroluminescence is distinguished depending on whether the light emitting material is an organic compound or an inorganic compound. Generally, the former is called an organic EL element, and the latter is an inorganic EL element.

In the organic EL element, when a voltage is applied to the light emitting element, electrons and holes are respectively injected from the pair of electrodes into the layer containing the light emitting organic compound, and current flows. Then, the carriers (electrons and holes) recombine to form an excited state of the light emitting organic compound, and light is emitted when the excited state returns to the ground state. From such a mechanism, such a light emitting element is referred to as a current excitation light emitting element.

Inorganic EL elements are classified into a dispersion-type inorganic EL element and a thin-film-type inorganic EL element according to the element configuration. The dispersion-type inorganic EL element has a light-emitting layer in which particles of a light-emitting material are dispersed in a binder, and the light emission mechanism is donor-acceptor recombination light emission utilizing a donor level and an acceptor level. In the thin film type inorganic EL device, the light emitting layer is sandwiched between the dielectric layers,
Furthermore, it has a structure in which it is sandwiched by electrodes, and the light emission mechanism is localized light emission utilizing inner-shell electron transition of metal ions. Here, an organic EL element is described as a light emitting element.

In the light emitting element, one of at least a pair of electrodes may be transparent in order to extract light emission. Then, a thin film transistor and a light emitting element are formed over the substrate, and light emission is extracted from the surface opposite to the substrate, or light emission is emitted from the surface on the substrate side. There is a light emitting element of double-sided emission structure for taking out light emission, and any light emission element of the emission structure can be applied.

An example using a light emitting display panel (EL panel) as the display panel 4311 is shown in FIG. A light emitting element 4513 which is a display element is a thin film transistor 401 provided in the display portion 4301.
It is electrically connected to 0. Note that the structure of the light-emitting element 4513 is a stacked structure of the first electrode layer 4030, the electroluminescent layer 4511, and the second electrode layer 4031, but is not limited to the structure shown. The structure of the light emitting element 4513 can be changed as appropriate in accordance with the direction of light extracted from the light emitting element 4513 or the like.

The partition 4510 is formed using an organic resin film, an inorganic insulating film, or an organic polysiloxane.
In particular, it is preferable to form an opening on the first electrode layer 4030 using a photosensitive material and to form an inclined surface in which the side wall of the opening has a continuous curvature.

The electroluminescent layer 4511 may be formed of a single layer or a plurality of layers may be stacked.

A protective film may be formed over the second electrode layer 4031 and the partition 4510 so that oxygen, hydrogen, moisture, carbon dioxide, and the like do not enter the light-emitting element 4513. As a protective film, a silicon nitride film,
A silicon nitride oxide film, a DLC film, or the like can be formed. Further, a filler 4514 is provided in a space sealed by the element substrate 4331, the sealing substrate 4332, and the sealant 4005, and the space is sealed. As described above, it is preferable to package (encapsulate) with a protective film (laminated film, an ultraviolet curable resin film, etc.) or a cover material which has high airtightness and low degassing so as not to be exposed to the outside air.

As the filler 4514, in addition to an inert gas such as nitrogen or argon, an ultraviolet curing resin or a thermosetting resin can be used, and PVC (polyvinyl chloride), acrylic, polyimide, epoxy resin, silicone resin, PVB (polyvinyl) Butyral) or EVA (ethylene vinyl acetate) can be used. For example, nitrogen may be used as a filler.

In addition, if necessary, a polarizing plate or a circularly polarizing plate (including an elliptically polarizing plate) may be provided on the emission surface of the light emitting element,
An optical film such as a retardation plate (λ / 4 plate, λ / 2 plate) or a color filter may be provided as appropriate. In addition, an antireflective film may be provided on the polarizing plate or the circularly polarizing plate. For example, anti-glare processing can be performed to diffuse reflected light and reduce reflection due to the unevenness of the surface.

An example using a liquid crystal display panel as the display panel 4311 is shown in FIG. In FIG.
A liquid crystal element 4013 which is a display element includes a first electrode layer 4030, a second electrode layer 4031, and a liquid crystal layer 4008. Note that insulating films 4032 and 4033 which function as alignment films are provided so as to sandwich the liquid crystal layer 4008. The second electrode layer 4031 is a sealing substrate 4332
The first electrode layer 4030 and the second electrode layer 4031 are stacked on the liquid crystal layer 4008.

4035 is a columnar spacer obtained by selectively etching the insulating film;
It is provided to control the film thickness (cell gap) of the liquid crystal layer 4008. A spherical spacer may be used.

Although not shown in the liquid crystal display device of FIG. 14, optical members (optical substrates) such as color filters (colored layers), black matrices (light shielding layers), polarizing members, retardation members, and anti-reflection members.
Etc. will be provided as appropriate. For example, circularly polarized light by a polarizing substrate and a retardation substrate may be used. In addition, a backlight, a sidelight, or the like may be used as a light source. E as backlight
It is preferable to use an L panel because it can be thinned.

Alternatively, liquid crystal exhibiting a blue phase for which an alignment film is not used may be used. The blue phase is one of the liquid crystal phases, and is a phase which appears immediately before the cholesteric liquid phase is changed to the isotropic phase when the temperature of the cholesteric liquid crystal is raised. Since the blue phase appears only in a narrow temperature range, a liquid crystal composition in which 5% by weight or more of a chiral agent is mixed is used for the liquid crystal layer 4008 in order to improve the temperature range. The liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a response speed of 10 μs to
As short as 100 μs and optical isotropy, alignment processing is unnecessary, and the viewing angle dependency is small.

Although FIG. 14 shows an example of a transmissive liquid crystal display panel, it can be applied to either a reflective liquid crystal display panel or a semi-transmissive liquid crystal display panel.

Note that as the element substrate 4331 and the sealing substrate 4332 in FIGS. 12 to 14 and 16, a light-transmitting plastic or the like can be used. As plastic, FRP (Fiberglass-Reinforced Plastics) board, PV
An F (polyvinyl fluoride) film, a polyester film or an acrylic resin film can be used. Moreover, the sheet | seat of the structure which pinched | interposed the aluminum foil by PVF film or a polyester film can also be used.

The insulating layer 4020 functions as a protective film of the thin film transistor.

Note that the protective film is for preventing the entry of contaminant impurities such as organic substances, metal substances, and water vapor floating in the air, and a dense film is preferable. The protective film is a single layer of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, an aluminum oxynitride film, or an aluminum nitride oxide film by sputtering. Alternatively, it may be formed by lamination.

For the insulating layer 4021 functioning as a planarization insulating film, a heat-resistant organic material such as acrylic, polyimide, benzocyclobutene, polyamide, or epoxy can be used. In addition to the above organic materials, low dielectric constant materials (low-k materials), siloxane resins, PS
G (phosphorus glass), BPSG (phosphorus glass), or the like can be used. Note that the insulating layer may be formed by stacking a plurality of insulating films formed using any of these materials.

The method for forming the insulating layer 4020 and the insulating layer 4021 is not particularly limited, and a sputtering method, an SOG method, a spin coating, a dip, a spray application, a droplet discharge method (ink jet method, screen printing, offset printing) depending on the material Etc.), a doctor knife, a roll coater, a curtain coater, a knife coater, etc. can be used. When the insulating layer is formed using a material solution, annealing (200 ° C. to 400 ° C.) of the semiconductor layer may be performed at the same time as the baking step. By combining the baking step of the insulating layer and the annealing of the semiconductor layer, a display panel can be efficiently manufactured.

The display panel transmits light from a light source or a display element to perform display. Therefore, thin films such as a substrate, an insulating film, and a conductive film provided in a display portion through which light passes are all made translucent to light in a visible light wavelength range.

In the first electrode layer and the second electrode layer (also referred to as a pixel electrode layer, a common electrode layer, a counter electrode layer, and the like) which apply voltage to the display element, the direction of light to be extracted, a location where the electrode layer is provided, Translucency and reflectivity may be selected depending on the pattern structure of the electrode layer.

The first electrode layer 4030 and the second electrode layer 4031 are indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium Tin oxide (hereinafter referred to as ITO).
A light-transmitting conductive material such as indium zinc oxide, indium tin oxide to which silicon oxide is added, or the like can be used.

The first electrode layer 4030 and the second electrode layer 4031 are made of tungsten (W), molybdenum (Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (N)
b) Metals such as tantalum (Ta), chromium (Cr), cobalt (Co), nickel (Ni), titanium (Ti), platinum (Pt), aluminum (Al), copper (Cu), silver (Ag) ,
Alternatively, it can be formed of one or more of its alloy or its metal nitride.

Alternatively, the first electrode layer 4030 and the second electrode layer 4031 can be formed using a conductive composition containing a conductive high molecule (also referred to as a conductive polymer). As the conductive high molecule, a so-called π electron conjugated conductive high molecule can be used. For example, polyaniline or a derivative thereof, polypyrrole or a derivative thereof, polythiophene or a derivative thereof, a copolymer of two or more of them, and the like can be given.

In addition, since a thin film transistor is easily broken by static electricity or the like, a protective circuit for protecting a driver circuit is preferably provided. The protection circuit is preferably configured using a non-linear element.

This embodiment can be implemented in appropriate combination with the structures described in the other embodiments.

Fifth Embodiment
In this embodiment, examples of materials and element structures included in the display device are described in detail.

The signal line drive circuit need not be particularly flexible in order to be provided on the support. Therefore,
It is preferable to use a semiconductor integrated circuit chip (IC) using a semiconductor substrate (semiconductor wafer) capable of high speed operation as the signal line driver circuit. A single crystal semiconductor substrate and a polycrystalline semiconductor substrate can be used as the semiconductor substrate, and a semiconductor wafer such as a silicon wafer or a germanium wafer, or a compound semiconductor wafer such as gallium arsenide or indium phosphide is used.

In addition, a substrate having an SOI structure in which a single crystal semiconductor layer is provided over an insulating surface in a signal line driver circuit (see FIG.
An SOI substrate) may be used. SOI substrate is SIMOX (Separation by
It can be formed using IMplanted Oxygen) method or Smart-Cut method. In the SIMOX method, oxygen ions are implanted into a single crystal silicon substrate to form an oxygen-containing layer at a predetermined depth, and then heat treatment is performed to form a buried insulating layer at a given depth from the surface, thereby forming a buried insulating layer. It is a method of forming a single crystal silicon layer on the layer. In addition, the Smart-Cut method performs hydrogen ion implantation on an oxidized single crystal silicon substrate to form a hydrogen-containing layer at a location corresponding to a desired depth, and another semiconductor substrate (oxidization for bonding to the surface) Bonding to a single crystal silicon substrate with a silicon film, etc.) and performing heat treatment to separate the single crystal silicon substrate with a hydrogen-containing layer, and form a stack of a silicon oxide film and a single crystal silicon layer over a semiconductor substrate How to

As a semiconductor element provided in a circuit portion of a display device, not only a field effect transistor but also a memory (storage) element using a semiconductor layer can be applied, and a semiconductor integrated circuit satisfying functions required for various uses. It can be provided.

The method is not particularly limited as long as the scanning line driving circuit and the display portion are provided on the flexible substrate of the display panel. The scan line driver circuit and the display portion may be formed directly on a flexible substrate or fabricated on another fabrication substrate, and then the element substrate is transferred to the flexible substrate using a peeling method from the fabrication substrate. It may be provided. For example, the scan line driver circuit and the display portion can be formed over the manufacturing substrate in the same step, and the scan line driver circuit and the display portion can be transposed on a flexible substrate of the display panel. In this case, since the scan line driver circuit and the display portion are formed in the same step, transistors having the same structure and material are preferable because cost can be reduced. Thus, the channel layers of the scan line driver circuit and the transistors included in the display portion are provided using the same material.

Alternatively, the flexible support substrate may be transferred from the manufacturing substrate to a flexible support substrate, and the flexible support substrate may be attached to a substrate of the display panel. For example, after only a plurality of scan line driver circuits are formed on a manufacturing substrate and transposed on a flexible support substrate, each flexible support substrate is divided into individual scan line driver circuits, which is necessary for one display panel. The scanning line drive circuit provided on a flexible support substrate may be provided by bonding. In this case, since the scan line driver circuit and the display portion are manufactured in different steps, transistors with various structures and materials can be selected.

Also, the above transposition method and the direct formation method may be combined. For example, using the printing method
Wiring for electrically connecting the display portion, the scan line driver circuit portion, the FPC, and the like may be formed directly on the flexible substrate of the display panel.

The manufacturing substrate may be selected as appropriate depending on the manufacturing process of the element layer. For example, as a manufacturing substrate, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, a metal substrate with an insulating layer formed on the surface, or the like can be used. Alternatively, a plastic substrate having heat resistance that can withstand processing temperatures may be used.

As the flexible substrate, an aramid resin, polyethylene naphthalate (PEN) resin, polyether sulfone (PES) resin, polyphenylene sulfide (PPS) resin, polyimide (PI) resin, or the like can be used. Alternatively, a prepreg, which is a structure in which fibers are impregnated with an organic resin, may be used.

The method of displacing the element layer from the manufacturing substrate to another substrate is not particularly limited, and various methods can be used. For example, a release layer may be formed between the manufacturing substrate and the element layer.

In the present specification, the element layer includes not only a semiconductor element layer provided on the element substrate side but also an opposite electrode layer provided on the opposite substrate side and the like. Therefore, the peeling process can be used on either the element base side or the sealing substrate side. In addition, in consideration of the simplicity of the process, after transferring from the manufacturing substrate to the flexible substrate, the flexible substrate can be temporarily bonded to a glass substrate or the like in the manufacturing process to advance the manufacturing process.

The peeling layer is formed of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), or the like by sputtering, plasma CVD, coating, printing or the like.
From nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), silicon (Si) A layer formed of a selected element or an alloy material containing an element as a main component, or a compound material containing the element as a main component is formed as a single layer or a stack. The crystal structure of the layer containing silicon may be either amorphous, microcrystalline or polycrystalline. Here, the coating method includes a spin coating method, a droplet discharge method, and a dispensing method.

When the release layer has a single-layer structure, preferably, a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum is formed. Alternatively, a layer containing oxide or oxynitride of tungsten, a layer containing oxide or oxynitride of molybdenum, or a layer containing oxide or oxynitride of a mixture of tungsten and molybdenum is formed. Note that a mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

When the release layer has a laminated structure, a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum is preferably formed as the first layer, and tungsten as the second layer.
An oxide, nitride, oxynitride or nitride oxide of molybdenum or a mixture of tungsten and molybdenum is formed.

In the case of forming a stacked-layer structure of a layer containing tungsten and a layer containing an oxide of tungsten as a peeling layer, the layer containing tungsten is formed, and an insulating layer formed of an oxide is formed thereover. It may be utilized that a layer containing an oxide of tungsten is formed at the interface between the layer and the insulating layer. Furthermore, the surface of the layer containing tungsten is thermally oxidized,
A layer containing a tungsten oxide may be formed by oxygen plasma treatment, treatment with a highly oxidative solution such as ozone water, or the like. Further, plasma treatment or heat treatment may be performed in an atmosphere of oxygen, nitrogen, dinitrogen monoxide alone, or a mixed gas of the above gas and another gas. The same applies to the case where a layer containing tungsten nitride, oxynitride and nitride oxide is formed, and after a layer containing tungsten is formed, a silicon nitride layer, a silicon oxynitride layer, and silicon nitride oxide are formed thereon. It is good to form a layer.

In the transfer process to another substrate, a peeling layer is formed between the substrate and the element layer, a metal oxide film is provided between the peeling layer and the element layer, and the metal oxide film is weakened by crystallization. A method of peeling the element layer, providing an amorphous silicon film containing hydrogen between the highly heat resistant substrate and the element layer, and removing the amorphous silicon film by laser light irradiation or etching. A method of peeling the element layer, forming a peeling layer between the substrate and the element layer, and providing a metal oxide film between the peeling layer and the element layer;
The metal oxide film is weakened by crystallization, and a part of the exfoliation layer is made of solution, NF ₃ , BrF ₃ , Cl
A method of peeling off the weakened metal oxide film after etching removal with a halogen fluoride gas such as F ₃ or the like, mechanically removing the substrate on which the element layer is formed, solution, NF ₃ or BrF
_3, a method for removing by etching with halogen fluoride gas such as ClF ₃ may be used as appropriate. In addition, a film containing nitrogen, oxygen, hydrogen, or the like (eg, an amorphous silicon film containing hydrogen, a hydrogen-containing alloy film, an oxygen-containing alloy film, etc.) is used as a peeling layer, and peeling is performed by irradiating the peeling layer with laser light. A method may be used in which nitrogen, oxygen or hydrogen contained in the layer is released as a gas to promote separation between the element layer and the substrate.

The transposition step can be more easily performed by combining the above peeling methods. That is, physical force is obtained after the peeling layer and the element layer are easily peeled off by performing laser light irradiation, etching of the peeling layer with gas or solution, etc., and mechanical deletion with a sharp knife or knife. Peeling can also be performed (by a machine or the like).

Alternatively, the element layer may be separated from the substrate by allowing the liquid to permeate the interface between the separation layer and the element layer. Water or the like can be used as the liquid.

The transistors included in the display device disclosed in this specification are not particularly limited. Therefore, the structure of the transistor and the semiconductor material used can be variously used.

An example of the structure of the thin film transistor is described with reference to FIG. FIG. 15 illustrates an example of a thin film transistor that can be used for the thin film transistor 4010 in Embodiment 5.

In FIGS. 15A to 15D, the insulating film 4023 is formed over the element substrate 4331, and the thin film transistors 4010a, 410b, 4010c, and 4010d are provided over the insulating film 4023. An insulating layer 4020 and an insulating layer 4021 are formed over the thin film transistors 4010a, 4010b, 4010c, and 4010d, and the thin film transistors 4010a and 4010b are formed.
, And 4010c and 4010d are provided.

In the thin film transistor 4010 in FIG. 12, the thin film transistor 4010 a includes the wiring layers 405 a and 405 b and the semiconductor layer 40 which function as a source electrode layer and a drain electrode layer.
And 3 are in contact with each other without the n + layer.

The thin film transistor 4010 a is a reverse staggered thin film transistor and is a substrate having an insulating surface, over the element substrate 4331 and the insulating film 4023, as a gate electrode layer 401, a gate insulating layer 402, a semiconductor layer 403, a source electrode layer or a drain electrode layer Functional wiring layer 405
a, 405b included.

The thin film transistor 4010 b is a bottom gate thin film transistor and has a gate electrode layer 401, a gate insulating layer 402, and a wiring layer functioning as a source electrode layer or a drain electrode layer over an element substrate 4331 which is a substrate having an insulating surface and the insulating film 4023. 405a, 405b
, N ⁺ layers 404 a and 404 b which function as source and drain regions, and a semiconductor layer 403. The n ⁺ layers 404 a and 404 b are semiconductor layers having lower resistance than the semiconductor layer 403. In addition, an insulating layer 4020 which covers the thin film transistor 4010 b and is in contact with the semiconductor layer 403.
Is provided.

Note that the n ⁺ layers 404 a and 404 b may be provided between the gate insulating layer 402 and the wiring layers 405 a and 405 b. Alternatively, the n ⁺ layer may be provided between the gate insulating layer and the wiring layer, and between the wiring layer and the semiconductor layer.

In the thin film transistor 4010b, the gate insulating layer 402 is present in all regions including the thin film transistor 4010b, and the gate electrode layer 401 is provided between the gate insulating layer 402 and the element substrate 4331 which is a substrate having an insulating surface. Wiring layers 405 a and 405 b and n ⁺ layers 404 a and 404 b are provided over the gate insulating layer 402. Then, the semiconductor layer 403 is provided over the gate insulating layer 402, the wiring layers 405a and 405b, and the n ⁺ layers 404a and 404b. Although not shown, wiring layer 405 on gate insulating layer 402 is not shown.
A wiring layer is provided in addition to a and 405 b, and the wiring layer extends outside the outer peripheral portion of the semiconductor layer 403.

In the thin film transistor 4010 b, the thin film transistor 4010 c has a structure in which a source electrode layer and a drain electrode layer are in contact with a semiconductor layer without an n ⁺ layer.

In the thin film transistor 4010c, the gate insulating layer 402 is present in the entire region including the thin film transistor 4010c, and the gate electrode layer 401 is provided between the gate insulating layer 402 and the element substrate 4331 which is a substrate having an insulating surface. Wiring layers 405 a and 405 b are provided on the gate insulating layer 402. And the gate insulating layer 402, the wiring layer 405a,
The semiconductor layer 403 is provided over 405 b. Although not shown, the gate insulating layer 40
In addition to the wiring layers 405 a and 405 b, the wiring layer has a wiring layer, and the wiring layer extends outside the outer peripheral portion of the semiconductor layer 403.

The thin film transistor 4010 d is a top gate thin film transistor. The thin film transistor 4010 d is an example of a planar thin film transistor. A semiconductor layer 403 including an n ⁺ layer 404 a, 404 b functioning as a source region or a drain region over an element substrate 4331 which is a substrate having an insulating surface and an insulating film 4023, a gate insulating layer 4 over the semiconductor layer 403.
The gate electrode layer 401 is formed over the gate insulating layer 402. Also n
Wiring layers 405a and 405b functioning as a source electrode layer and a drain electrode layer are formed in contact with the ⁺ layers 404a and 404b. The n ⁺ layers 404 a and 404 b are semiconductor regions having lower resistance than the semiconductor layer 403.

A top gate type forward staggered thin film transistor may be used as the thin film transistor.

Although the single gate structure is described in this embodiment, a multi gate structure such as a double gate structure may be used. In this case, a gate electrode layer may be provided above and below the semiconductor layer, or a plurality of gate electrode layers may be provided only on one side (above or below) of the semiconductor layer.

The semiconductor material used for the semiconductor layer is not particularly limited. Examples of materials that can be used for the semiconductor layer of the thin film transistor are described.

A material for forming a semiconductor layer included in a semiconductor element is amorphous (amorphous, hereinafter, also referred to as “AS”) manufactured by a vapor deposition method or a sputtering method using a semiconductor material gas typified by silane or germane. A semiconductor, a polycrystalline semiconductor obtained by crystallizing the amorphous semiconductor using light energy or thermal energy, or a microcrystalline (also called semi-amorphous or microcrystalline, hereinafter referred to as “SAS”) semiconductor or the like can be used. it can. The semiconductor layer can be formed by a sputtering method, an LPCVD method, a plasma CVD method, or the like.

The microcrystalline semiconductor film belongs to an intermediate metastable state between amorphous and single crystal in consideration of Gibbs free energy. That is, it is a semiconductor having a free energy stable third state, which has short-range order and lattice distortion. Columnar or needle crystals are grown in the direction normal to the substrate surface. A Raman spectrum of microcrystalline silicon which is a typical example of a microcrystalline semiconductor is shifted to a lower wave number than 520 cm ⁻¹ which represents single crystal silicon. That is, 520 cm ⁻¹ representing single crystal silicon and 480 cm representing amorphous silicon
There is a peak of Raman spectrum of microcrystalline silicon between ^-1 . In addition, at least 1 atomic% or more of hydrogen or halogen is included to terminate dangling bonds (dangling bonds). Furthermore, by containing a rare gas element such as helium, argon, krypton, or neon to further promote lattice distortion, stability is increased and a favorable microcrystalline semiconductor film can be obtained.

This microcrystalline semiconductor film can be formed by a high-frequency plasma CVD method with a frequency of several tens of megahertz to several hundreds of megahertz or a microwave plasma CVD apparatus with a frequency of 1 GHz or more. Typically, SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , S
It can be formed by diluting silicon hydride such as iF ₄ with hydrogen. In addition to silicon hydride and hydrogen, the microcrystalline semiconductor film can be formed by dilution with one or more rare gas elements selected from helium, argon, krypton, and neon. The flow ratio of hydrogen to silicon hydride at these times is 5 times or more and 200 times or less, preferably 50 times or more and 150 times or less,
More preferably, it is 100 times.

The amorphous semiconductor is typically hydrogenated amorphous silicon, and the crystalline semiconductor is typically polysilicon or the like. The main material of polysilicon (polycrystalline silicon) is so-called high temperature polysilicon using as a main material polysilicon formed at a process temperature of 800 ° C. or more, or polysilicon formed at a process temperature of 600 ° C. or less It includes polysilicon obtained by crystallizing amorphous silicon by using so-called low temperature polysilicon used as the above, or an element which promotes crystallization. Needless to say, as described above, a microcrystalline semiconductor or a semiconductor including a crystal phase in part of a semiconductor layer can also be used.

Further, as a material of the semiconductor, not only silicon (Si), germanium (Ge), etc. but also compound semiconductors such as GaAs, InP, SiC, ZnSe, GaN, SiGe etc. can be used.

In the case of using a crystalline semiconductor film for the semiconductor layer, a method for manufacturing the crystalline semiconductor film can be various methods (a laser crystallization method, a thermal crystallization method, or a thermal treatment using an element such as nickel that promotes crystallization). A crystallization method or the like may be used. Alternatively, the microcrystalline semiconductor, which is an SAS, can be crystallized by laser irradiation to improve crystallinity. When an element promoting crystallization is not introduced, the hydrogen concentration in the amorphous silicon film is 1 × by heating at 500 ° C. in a nitrogen atmosphere for 1 hour before irradiating the amorphous silicon film with laser light. Release to 10 ²⁰ atoms / cm ³ or less.
This is because the amorphous silicon film is destroyed when the amorphous silicon film containing a large amount of hydrogen is irradiated with laser light.

The method of introducing the metal element into the amorphous semiconductor layer is not particularly limited as long as the metal element can be present on the surface of the amorphous semiconductor film or in the inside thereof, for example, the sputtering method, CVD, etc.
A method, a plasma treatment method (including plasma CVD method), an adsorption method, a method of applying a solution of metal salt can be used. Among them, the method using a solution is simple and useful in that the concentration adjustment of the metal element is easy. At this time, in order to improve the wettability of the surface of the amorphous semiconductor film and spread the aqueous solution over the entire surface of the amorphous semiconductor film, irradiation of UV light in an oxygen atmosphere, thermal oxidation method, hydroxy radical, etc. It is desirable to form an oxide film by treatment with ozone water or hydrogen peroxide, or the like.

In addition, in the crystallization step of crystallizing an amorphous semiconductor film to form a crystalline semiconductor film, an element (also referred to as a catalytic element or a metal element) that promotes crystallization is added to the amorphous semiconductor film, and heat treatment ( 550
Crystallization may be carried out according to the following conditions. Elements that promote (promote) crystallization include iron (Fe), nickel (Ni), cobalt (Co), ruthenium (Ru)
), Rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir)
One or more selected from platinum (Pt), copper (Cu) and gold (Au) can be used.

In order to remove or reduce an element promoting crystallization from the crystalline semiconductor film, a semiconductor film containing an impurity element is formed in contact with the crystalline semiconductor film, and the semiconductor film functions as a gettering sink. As the impurity element, an impurity element imparting n-type conductivity, an impurity element imparting p-type conductivity, a rare gas element, or the like can be used. For example, phosphorus (P), nitrogen (N), arsenic (As), antimony (antimony)
One or more selected from Sb), bismuth (Bi), boron (B), helium (He), neon (Ne), argon (Ar), Kr (krypton) and Xe (xenon) can be used. . A semiconductor film containing a rare gas element is formed over a crystalline semiconductor film containing an element which promotes crystallization, and heat treatment (at 550 ° C. to 750 ° C. for 3 minutes to 24 hours) is performed. The element which promotes crystallization contained in the crystalline semiconductor film moves into the semiconductor film containing a rare gas element, and the element which promotes crystallization in the crystalline semiconductor film is removed or reduced. After that, the semiconductor film containing a rare gas element which has become a gettering sink is removed.

The crystallization of the amorphous semiconductor film may be a combination of heat treatment and crystallization by laser light irradiation,
The heat treatment or the laser light irradiation may be performed alone or a plurality of times.

Alternatively, the crystalline semiconductor film may be formed directly on the substrate by a plasma method. Alternatively, the crystalline semiconductor film may be selectively formed over the substrate by a plasma method.

Alternatively, an oxide semiconductor may be used for the semiconductor layer. For example, zinc oxide (ZnO), tin oxide (SnO ₂ ), or the like can also be used. When ZnO is used for the semiconductor layer, the gate insulating layer is Y ₂ O ₃ , Al ₂ O ₃ , TiO ₂ , or a stack thereof, and the gate electrode layer, the source electrode layer, and the drain electrode layer are ITO, Au, Ti or the like can be used. Also,
In or Ga can also be added to ZnO.

A thin film represented by InMO ₃ (ZnO) _m (m> 0) can be used as the oxide semiconductor. M represents gallium (Ga), iron (Fe), nickel (Ni), manganese (M
and n) one or more metal elements selected from cobalt (Co). For example, in addition to the case of Ga as M, the above metal elements other than Ga, such as Ga and Ni or Ga and Fe, may be included. Further, in the above oxide semiconductor, in addition to the metal element contained as M, as an impurity element, a transition metal element other than Fe, Ni, or an oxide of the transition metal may be contained. For example, an In-Ga-Zn-O-based non-single-crystal film can be used as the oxide semiconductor layer.

Instead of an In—Ga—Zn—O-based non-single-crystal film as an oxide semiconductor layer (InMO ₃ (ZnO) _m (m> 0) film), InMO ₃ (ZnO) _m (M is another metal element) m> 0) A membrane may be used. In addition to the above as an oxide semiconductor applied to the oxide semiconductor layer, In
-Sn-Zn-O system, In-Al-Zn-O system, Sn-Ga-Zn-O system, Al-Ga-
Zn-O, Sn-Al-Zn-O, In-Zn-O, Sn-Zn-O, Al-Z
An n-O-based, an In-O-based, an Sn-O-based, or a Zn-O-based oxide semiconductor can be applied.

This embodiment can be implemented in appropriate combination with the structures described in the other embodiments.

Claims (3)

A first resin and a second resin,
A display unit,
A scanning line drive circuit,
Signal line drive circuit,
And an FPC,
The display unit has a region located between the first resin and the second resin,
The scanning line drive circuit has a region located between the first resin and the second resin,
The signal line drive circuit is not located between the first resin and the second resin.
The first resin is formed between a first area overlapping the display portion and the scanning line driving circuit, a second area overlapping the FPC, and a first area and the second area. With 3 regions,
The display device having a function of bending the first resin in the third region. In claim 1,
The display apparatus which has the said signal line drive circuit on the said FPC. In claim 1,
The display device, wherein the first resin has a fourth region overlapping with the signal line driver circuit.

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