JP2019077104A - Tube surface treatment apparatus and plasma treatment apparatus - Google Patents

Tube surface treatment apparatus and plasma treatment apparatus Download PDF

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JP2019077104A
JP2019077104A JP2017205886A JP2017205886A JP2019077104A JP 2019077104 A JP2019077104 A JP 2019077104A JP 2017205886 A JP2017205886 A JP 2017205886A JP 2017205886 A JP2017205886 A JP 2017205886A JP 2019077104 A JP2019077104 A JP 2019077104A
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tube
pressure
electrode
tower
treatment apparatus
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JP7001258B2 (en
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陽三 丸山
Yozo Maruyama
陽三 丸山
衛 塩脇
Mamoru Shiowaki
衛 塩脇
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IZUMI KOGYO KK
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IZUMI KOGYO KK
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Abstract

To provide a tube surface treatment apparatus suitable for surface modification of an inner surface of a space-saving, elastically deformable or coil formed tube by plasma irradiation.SOLUTION: A tube surface treatment apparatus 1 has a vacuum chamber 2, a support tower 5 disposed in the vacuum chamber 2 and having an elastically deformable tube 7 helically wound and attached to an outer periphery of a tower main body 50 or a coiled tube attached, a plurality of first electrode body disposed along a circumferential direction on an outer periphery of the tower main body 50, a plurality of second electrode body disposed between the first electrode body along a circumferential direction on an outer periphery of the tower main body 50, a power supply unit 12 for applying a predetermined voltage to the first electrode body and the second electrode body, and a first vacuum pump unit 8 connected to the tube 7 attached to the tower main body 50 to evacuate a gas in the tube 7 and reduce a pressure to a pressure at which plasma is generated in the tube 7.SELECTED DRAWING: Figure 1

Description

本発明は、弾性変形可能又はコイル状のチューブ内をプラズマ照射により表面改質するチューブの表面処理装置に係り、特に、省スペースで弾性変形可能又はコイル状のチューブの内面をプラズマ照射で表面改質するのに好適なチューブの表面処理装置及びプラズマ処理装置に関する。   The present invention relates to a tube surface treatment apparatus for surface modification of an elastically deformable or coiled tube by plasma irradiation, and in particular, the inner surface of the elastically deformable or coiled tube can be surface-modified by plasma irradiation. TECHNICAL FIELD The present invention relates to a tube surface treatment apparatus and a plasma treatment apparatus suitable for quality control.

試験管やピペットの内壁面をプラズマ照射により親水性の改善を図る表面処理方法として、例えば、開口端を塞いた試験管内を真空状態に維持し、試験管の両端に配置した電極に所定電圧の直流パルス電圧を所定時間印加することが提案されている(特許文献1)。   As a surface treatment method for improving the hydrophilicity of the inner wall surface of a test tube or a pipette by plasma irradiation, for example, the inside of the test tube whose open end is closed is maintained in a vacuum state, and an electrode placed at both ends of the test tube It has been proposed to apply a DC pulse voltage for a predetermined time (Patent Document 1).

特許第5785650号公報Patent No. 5785650

特許文献1に開示された表面処理方法により、弾性変形可能な長尺チューブの内面を表面処理する場合、長尺チューブを真っ直ぐに延ばさなければならず、スペース確保等の点から非現実的であった。   In the case where the inner surface of an elastically deformable long tube is surface-treated by the surface treatment method disclosed in Patent Document 1, the long tube must be extended straight, which is unrealistic in terms of securing a space, etc. The

また、コイル状のチューブの内面をプラズマ照射により表面改質処理する場合、特許文献1の電極配置ではプラズマの発生が困難である。   Further, when the inner surface of the coiled tube is surface-modified by plasma irradiation, it is difficult to generate plasma with the electrode arrangement of Patent Document 1.

そこで、本発明は、このような従来の技術の有する未解決の課題に着目してなされたものであって、省スペースで弾性変形可能又はコイル状のチューブの内面をプラズマ照射で表面改質するのに好適なチューブの表面処理装置及びプラズマ処理装置を提供することを目的としている。   Therefore, the present invention has been made focusing on the unsolved problems of such conventional techniques, and it is possible to space-reform the inner surface of an elastically deformable or coiled tube by plasma irradiation. It is an object of the present invention to provide a suitable tube surface treatment apparatus and plasma treatment apparatus.

〔発明1〕 上記目的を達成するために、発明1のチューブの表面処理装置は、弾性変形可能又はコイル状のチューブの内面をプラズマ照射により表面処理するチューブの表面処理装置であって、真空チャンバーと、前記真空チャンバー内に配置され、塔本体の外周に前記弾性変形可能なチューブが螺旋状に巻回されて取り付けられ、又は前記コイル状のチューブが取り付けられる支持塔と、前記塔本体の外周に周方向に沿って配置された複数の第1電極体と、前記塔本体の外周に周方向に沿って前記第1電極体の間に配置された複数の第2電極体と、前記第1電極体と前記第2電極体に所定電圧を印加する電源部と、前記塔本体に取り付けられるチューブに接続されて前記チューブ内の気体を排気し、前記チューブ内にプラズマが発生する気圧に減圧する第1真空ポンプ部と、を有する。   [Invention 1] In order to achieve the above object, the tube surface treatment apparatus of Invention 1 is a tube surface treatment apparatus for treating the inner surface of an elastically deformable or coiled tube by plasma irradiation, which is a vacuum chamber And a support tower disposed in the vacuum chamber, the elastically deformable tube being helically wound and attached to the outer periphery of the tower body, or the outer periphery of the tower body to which the coiled tube is attached A plurality of first electrode bodies disposed along the circumferential direction, a plurality of second electrode bodies disposed between the first electrode bodies along the circumferential direction on the outer periphery of the tower main body, and the first A power supply for applying a predetermined voltage to the electrode body and the second electrode body, and a tube attached to the tower main body exhaust the gas in the tube and generate plasma in the tube It has a first vacuum pump unit for depressurizing the pressure, the.

ここで、真空とは、大気圧より低い圧力の気体で満たされた空間内の状態をいう。以下、本願明細書において同じである。   Here, a vacuum means the state in the space filled with the gas of pressure lower than atmospheric pressure. Hereinafter, the same applies in the present specification.

〔発明2〕 さらに、発明2のチューブの表面処理装置は、発明1のチューブの表面処理装置において、前記チューブの両端部は、前記チューブの両端部に取り付けられるチューブ止め手段により前記塔本体の外周面に取り外し可能に止められる。   [Invention 2] Further, in the tube surface treatment apparatus of the invention 2, in the tube surface treatment apparatus of the invention 1, both ends of the tube are outer peripheries of the tower main body by tube stoppers attached to both ends of the tube. Releasably secured to the surface.

〔発明3〕 さらに、発明3のチューブの表面処理装置は、発明1のチューブの表面処理装置において、前記塔本体の外周面に前記チューブが嵌合する嵌合溝を螺旋状に形成した。   [Invention 3] Further, in the tube surface treatment apparatus of the invention 3, in the tube surface treatment apparatus of the invention 1, the fitting groove in which the tube is fitted is formed in a spiral on the outer peripheral surface of the tower main body.

〔発明4〕 さらに、発明4のチューブの表面処理装置は、発明1乃至3のいずれか1のチューブの表面処理装置において、前記支持塔は、前記真空チャンバー内に取り出し可能に取り付けられている。   [Invention 4] Furthermore, in the tube surface treatment apparatus of the invention 4 according to any one of the inventions 1 to 3, the support tower is removably attached to the inside of the vacuum chamber.

〔発明5〕 さらに、発明5のチューブの表面処理装置は、発明1乃至4のいずれか1のチューブの表面処理装置において、前記真空チャンバー内の気体を排気して、前記チューブ内の気圧よりも高く前記真空チャンバー内でプラズマが発生しない圧力に減圧し、前記チューブ内の気圧との間に生じる差圧を調節可能とする第2真空ポンプ部を有する。   [Invention 5] Furthermore, in the tube surface treatment apparatus according to the fifth invention, in the tube surface treatment apparatus according to any one of the first to fourth inventions, the gas in the vacuum chamber is exhausted to make the pressure higher than the pressure in the tube. The second vacuum pump unit has a second vacuum pump portion that is highly reduced to a pressure at which no plasma is generated in the vacuum chamber, and a differential pressure generated between the pressure in the tube and the pressure in the tube can be adjusted.

〔発明6〕 さらに、発明6のチューブの表面処理装置は、発明1乃至5のいずれか1のチューブの表面処理装置において、前記真空チャンバーは、縦長有底の筒体形状に形成されたチャンバー本体と、前記チャンバー本体の上端開口を塞ぐ蓋体と、を有し、前記上端開口を通して前記支持塔を取り出し可能とする。   [Invention 6] The tube surface treatment apparatus according to the invention 6 is the tube surface treatment apparatus according to any one of the inventions 1 to 5, wherein the vacuum chamber is a chamber body formed in a cylindrical shape with a vertical bottom. And a lid closing an upper end opening of the chamber body, and the support tower can be taken out through the upper end opening.

〔発明7〕 一方、上記目的を達成するために、発明7のプラズマ処理装置は、被処理対象物の内面及び外面のうち一方の面をプラズマ照射により処理するプラズマ処理装置であって、気圧をそれぞれ調整可能な2つの空間のうち一方の空間に前記被処理対象物の内面を、他方の空間に前記被処理対象物の外面を配置した状態で前記2つの空間の差圧が所定条件となるように前記一方の空間の気圧及び前記他方の空間の気圧を減圧するとともに、前記一方の空間の気圧を前記他方の空間の気圧よりも低くする。   [Invention 7] On the other hand, in order to achieve the above object, the plasma processing apparatus of Invention 7 is a plasma processing apparatus for processing one of the inner surface and the outer surface of the object to be treated by plasma irradiation. With the inner surface of the object to be treated in one of the two adjustable spaces and the outer surface of the object to be treated in the other space, the differential pressure between the two spaces is a predetermined condition. Thus, the pressure in the one space and the pressure in the other space are reduced, and the pressure in the one space is made lower than the pressure in the other space.

以上説明したように、発明1のチューブの表面処理装置によれば、弾性変形可能なチューブの長さに関係なく、又はコイル状のチューブでも塔本体の外周に巻き付けた状態で配置できるので、装置の省スペース化を図ることができる。また、第1電極体と第2電極体をチューブを挟んで対向配置せず、塔本体の外周に周方向に沿って交互に配置してプラズマを発生させることができるので、第1電極体と第2電極体の配置の自由度が増し、装置のコンパクト化を図ることができる。   As described above, according to the tube surface treatment apparatus of the invention 1, the apparatus can be disposed in a state of being wound around the outer periphery of the tower body regardless of the length of the elastically deformable tube or even a coiled tube. Save space. In addition, since the first electrode body and the second electrode body can be alternately arranged along the circumferential direction on the outer periphery of the tower body without opposingly arranging the first electrode body and the second electrode body across the tube, the first electrode body and The degree of freedom in the arrangement of the second electrode body is increased, and the device can be made compact.

さらに、発明2のチューブの表面処理装置によれば、チューブの長短に合わせて塔本体の外周面にチューブを適切に取り付けることができる。   Furthermore, according to the tube surface treatment apparatus of the invention 2, the tube can be appropriately attached to the outer peripheral surface of the tower body in accordance with the length and length of the tube.

さらに、発明3のチューブの表面処理装置によれば、同一長さのチューブを容易に取り付けできるので、多数本の同一な長さのチューブを効率よく処理することができる。   Furthermore, according to the tube surface treatment apparatus of the third aspect of the present invention, since tubes of the same length can be easily attached, a large number of tubes of the same length can be processed efficiently.

さらに、発明4のチューブの表面処理装置によれば、予めチューブを取り付けた支持塔を用意しておけば、処理終了から次の処理までの支持塔の交換時間を短縮することができ、処理効率をアップさせることができる。   Furthermore, according to the tube surface treatment apparatus of the invention 4, if a support tower on which a tube is attached is prepared in advance, the exchange time of the support tower from the end of the treatment to the next treatment can be shortened, and the treatment efficiency Can be up.

さらに、発明5のチューブの表面処理装置によれば、第2真空ポンプ部により、チューブの変形強度の大小に応じてチューブの内外の差圧を調節することで、チューブの圧潰を防止して、チューブ内の内周表面のみに表面改質処理を施すことができる。   Furthermore, according to the tube surface treatment apparatus of the fifth aspect, crushing of the tube is prevented by adjusting the differential pressure inside and outside the tube according to the magnitude of the deformation strength of the tube by the second vacuum pump unit. Surface modification treatment can be performed only on the inner circumferential surface in the tube.

さらに、発明6のチューブの表面処理装置によれば、支持塔の交換は、蓋体をチャンバー本体から取り外し、チャンバー本体の開口から支持塔をチャンバー本体内に降ろす操作と引き上げる簡単な操作で支持塔の交換操作を行うことができる。   Furthermore, according to the tube surface treatment apparatus of the sixth aspect, the support tower is replaced by removing the lid from the chamber body, and lowering the support tower from the opening of the chamber body into the chamber body and lifting the support tower with a simple operation. Exchange operations can be performed.

一方、発明7のプラズマ処理装置によれば、被処理対象物の変形を抑制し被処理対象物の内面及び外面のうち一方の面を処理することができる。   On the other hand, according to the plasma processing apparatus of the seventh aspect, it is possible to suppress the deformation of the object to be treated and process one of the inner surface and the outer surface of the object to be treated.

チューブの表面処理装置1の外観斜視図である。It is an external appearance perspective view of the surface treatment apparatus 1 of a tube. チューブの表面処理装置1の正面図である。It is a front view of the surface treatment apparatus 1 of a tube. チューブの表面処理装置1の右側面図である。It is a right side view of surface treatment apparatus 1 of a tube. チューブの表面処理装置1の上面図である。It is a top view of the surface treatment apparatus 1 of a tube. 支持塔5の外観斜視図である。FIG. 2 is an external perspective view of a support tower 5; (a)が支持塔5の上面図、(b)が支持塔5の右側面図、(c)が支持塔5の正面図である。(A) is a top view of the support tower 5, (b) is a right side view of the support tower 5, (c) is a front view of the support tower 5. 支持塔200の分解斜視図である。FIG. 7 is an exploded perspective view of a support tower 200. 図7のA−A線に沿った断面図である。It is sectional drawing along the AA of FIG.

〔第1実施形態〕
以下、本発明の第1実施形態を説明する。図1乃至図6は、本実施形態を示す図である。
First Embodiment
Hereinafter, a first embodiment of the present invention will be described. 1 to 6 show the present embodiment.

まず、本実施形態の構成を説明する。
図1は、チューブの表面処理装置1の外観斜視図である。図2は、チューブの表面処理装置1の正面図である。図3は、チューブの表面処理装置1の右側面図である。
First, the configuration of the present embodiment will be described.
FIG. 1 is an external perspective view of a tube surface treatment apparatus 1. FIG. 2 is a front view of the tube surface treatment apparatus 1. FIG. 3 is a right side view of the tube surface treatment apparatus 1.

図1において、チューブの表面処理装置1は、縦長の筒体形状に形成された真空チャンバー2と、真空チャンバー2内に取り出し可能に設置された支持塔5と、支持塔5に螺旋状に巻回される弾性変形可能な長尺のチューブ7内の気体を排気する第1真空ポンプ部8と、真空チャンバー2内の気体を排気する第2真空ポンプ部9と、支持塔5に取付けた第1電極10と第2電極11に例えば直流のパルス電圧を印加する電源部12とを有する。   In FIG. 1, the tube surface treatment apparatus 1 is spirally wound around a vacuum chamber 2 formed in a vertically long cylindrical shape, a support tower 5 installed in the vacuum chamber 2 so as to be removable, and the support tower 5. The first vacuum pump unit 8 for evacuating the gas in the elastically deformable elongated tube 7, the second vacuum pump unit 9 for evacuating the gas in the vacuum chamber 2, and the support tower 5 For example, the power supply unit 12 applies a pulse voltage of direct current to the first electrode 10 and the second electrode 11.

次に、真空チャンバー2の構成を説明する。
真空チャンバー2は、底部20を有する縦長円筒形状のチャンバー本体21の上端に形成された開口22を円盤形状の蓋体23により閉塞している。チャンバー本体21の側面に、チャンバー本体21の内外を連通する第1排気ポート24と第2排気ポート25が取付けられている。第1排気ポート24と第2排気ポート25は第1真空ポンプ部4と不図示の接続パイプを介して接続される。
Next, the configuration of the vacuum chamber 2 will be described.
In the vacuum chamber 2, an opening 22 formed at the upper end of a vertically long cylindrical chamber main body 21 having a bottom portion 20 is closed by a disk-shaped lid 23. A first exhaust port 24 and a second exhaust port 25 communicating the inside and the outside of the chamber body 21 are attached to the side surface of the chamber body 21. The first exhaust port 24 and the second exhaust port 25 are connected to the first vacuum pump unit 4 via a connection pipe (not shown).

底部20の中央部分に有底の円形形状の底穴部26が形成されている。底穴部26には、支持塔5を底部20に取付ける中空形状の取り付け台27が嵌合している。取り付け台27は、円筒形状の第1係合部28と第1係合部28よりも外径が大径の円盤形状の台本体部29が同一軸心上に一体的に形成され、台本体部29が底穴部26に嵌合する。台本体部29の上面30は、底部20の表面と一致している。   A bottomed circular bottom hole 26 is formed in the central portion of the bottom 20. The bottom hole 26 is fitted with a hollow mount 27 for attaching the support tower 5 to the bottom 20. The mounting base 27 is integrally formed with a cylindrical first engaging portion 28 and a disk-shaped base body portion 29 having an outer diameter larger than that of the first engaging portion 28 on the same axial center. The part 29 fits into the bottom hole 26. The top surface 30 of the base body 29 is flush with the surface of the bottom 20.

底穴部26には、周方向に一定角度間隔で4本の取り付けピン31a〜31dが上方に向けて支出されている。台本体部29には、取り付けピン31a〜31dに対応して係合孔32a〜32dが形成されている。台本体部29の係合孔32a〜32dを取り付けピン31a〜31dに差し込んで接着剤等で接着することで取り付け台27が底部20に固定される。第1係合部28は、直径線を挟んで前部33の上面が後部34の上面よりも上下方向において低く形成され、前部33の上面と後部34の上面との間で上下方向に段差35が形成されている。   In the bottom hole portion 26, four mounting pins 31a to 31d are expended upward at constant angular intervals in the circumferential direction. In the stand main body portion 29, engagement holes 32a to 32d are formed corresponding to the attachment pins 31a to 31d. The mounting base 27 is fixed to the bottom portion 20 by inserting the engaging holes 32 a to 32 d of the base body portion 29 into the mounting pins 31 a to 31 d and adhering them with an adhesive or the like. The first engaging portion 28 is formed such that the upper surface of the front portion 33 is lower in the vertical direction than the upper surface of the rear portion 34 across the diameter line, and the step in the vertical direction between the upper surface of the front portion 33 and the upper surface of the rear portion 34 35 are formed.

蓋体23の内面の外周部は、開口22の上端面の全周面と密着状態で当接する。蓋体23には、チャンバー本体21の内外を連通する第3排気ポート36と、チャンバー本体21内の気圧を測定する圧力計37が取り付けられている。第3排気ポート36は第2真空ポンプ部9と不図示の接続パイプを介して接続される。第2真空ポンプ部9を駆動して真空チャンバー2内の気圧を減圧すると、蓋体23は差圧によりチャンバー本体21の開口に密着する。   The outer peripheral portion of the inner surface of the lid 23 is in close contact with the entire peripheral surface of the upper end surface of the opening 22. The lid 23 is provided with a third exhaust port 36 communicating the inside and the outside of the chamber body 21 and a pressure gauge 37 for measuring the air pressure inside the chamber body 21. The third exhaust port 36 is connected to the second vacuum pump unit 9 via a connection pipe (not shown). When the second vacuum pump unit 9 is driven to reduce the pressure in the vacuum chamber 2, the lid 23 is in close contact with the opening of the chamber body 21 by the differential pressure.

次に、支持塔5の構成を説明する。
図4は、チューブの表面処理装置1の上面図である。図5は、支持塔5の外観斜視図である。図6は、(a)が支持塔5の上面図、(b)が支持塔5の右側面図、(c)が支持塔5の正面図である。
Next, the configuration of the support tower 5 will be described.
FIG. 4 is a top view of the tube surface treatment apparatus 1. FIG. 5 is an external perspective view of the support tower 5. 6A is a top view of the support tower 5, FIG. 6B is a right side view of the support tower 5, and FIG. 6C is a front view of the support tower 5.

支持塔5は、円筒形状の塔本体50と、塔本体50の下端部が差し込まれる円筒形状に形成された第2係合部51とを有する。塔本体50は、外周面に軸方向に沿って第1凹溝52〜第4凹溝55の4つの凹溝が等間隔(90度)に形成されている。対向する第1凹溝52と第3凹溝54には第1電極10のA電極体10AとB電極体10Bが装着される。第1電極10は、細幅の導電部材を平面コ字形状に折曲して形成され、中央部分の接続体100の両側に第1電極体をなすA電極体10AとB電極体10Bが対向配置される。第2電極11は、第1電極10と同様に構成され、中央部分の接続体110の両側に第2電極体をなすC電極体11CとD電極体11Dが対向配置される。そして、対向する第2凹溝53と第4凹溝55にC電極体11CとD電極体11Dが装着される。すなわち、前記第1電極体の間に前記第2電極体が配置される。   The support tower 5 has a cylindrical tower body 50 and a second engaging portion 51 formed in a cylindrical shape into which the lower end portion of the tower body 50 is inserted. In the column main body 50, four concave grooves of a first concave groove 52 to a fourth concave groove 55 are formed at equal intervals (90 degrees) along the axial direction on the outer peripheral surface. The A electrode body 10A and the B electrode body 10B of the first electrode 10 are attached to the first groove 52 and the third groove 54 opposed to each other. The first electrode 10 is formed by bending a narrow conductive member into a flat U-shape, and the A electrode body 10A and the B electrode body 10B forming the first electrode body face each other on both sides of the connection body 100 in the central portion. Be placed. The second electrode 11 is configured in the same manner as the first electrode 10, and a C electrode body 11C and a D electrode body 11D forming a second electrode body are disposed opposite to each other on both sides of the connection body 110 in the central portion. Then, the C electrode body 11C and the D electrode body 11D are attached to the facing second concave groove 53 and the fourth concave groove 55, respectively. That is, the second electrode body is disposed between the first electrode bodies.

第2係合部51の内径孔56に塔本体50の下端部が密嵌合する。内径孔56の内面には、第1凹溝52〜第4凹溝55の凹部に対応して第1係合片57〜第4係合片60が内向きに形成されている。第1係合片57〜第4係合片60は、第1凹溝52〜第4凹溝55に装着されるA電極10A、B電極10B、C電極11C、D電極11Dの外面に達する位置までに延びている。   The lower end portion of the tower body 50 is closely fitted in the inner diameter hole 56 of the second engaging portion 51. The first engagement piece 57 to the fourth engagement piece 60 are formed inward on the inner surface of the inner diameter hole 56 in correspondence with the concave portions of the first concave groove 52 to the fourth concave groove 55. Positions where the first engagement piece 57 to the fourth engagement piece 60 reach the outer surfaces of the A electrode 10A, the B electrode 10B, the C electrode 11C, and the D electrode 11D attached to the first recessed groove 52 to the fourth recessed groove 55 It extends to

第2係合部51は、直径線を挟んで後部61の下面が前部62の下面よりも上方に位置するように形成され、前部62の下面と後部61の下面との間で上下方向に段差63が形成されている。第2係合部51と第1係合部28は外径が同径に形成され、第2係合部51を第1係合部28に対し、互いの段差35と段差63が接するようにして重ねると、軸回りに回転不能に係合する。   The second engaging portion 51 is formed such that the lower surface of the rear portion 61 is positioned above the lower surface of the front portion 62 with the diameter line interposed therebetween, and the vertical direction between the lower surface of the front portion 62 and the lower surface of the rear portion 61 A step 63 is formed on the The second engaging portion 51 and the first engaging portion 28 are formed to have the same outer diameter so that the second engaging portion 51 is in contact with the step 35 and the step 63 with respect to the first engaging portion 28. When stacked, they engage non-rotatably about the axis.

塔本体50の下端部は、第2係合部51の段差63と一致するように切欠かれており、塔本体50の後部64の下端は第2係合部51の後部61の下面まで達し、塔本体50の前部65の下端は第2係合部51の前部62の下面まで達している。   The lower end portion of the tower main body 50 is cut out so as to coincide with the step 63 of the second engaging portion 51, and the lower end of the rear portion 64 of the tower main body 50 reaches the lower surface of the rear portion 61 of the second engaging portion 51, The lower end of the front portion 65 of the tower main body 50 reaches the lower surface of the front portion 62 of the second engaging portion 51.

図6に示すように、第1電極10と第2電極11は、接続体100と接続体110を塔本体50の下側に互いに直交するように配置し、A電極体10Aを第1凹溝52、B電極体10Bを第3凹溝54、C電極体11Cを第2凹溝53、D電極体11Dを第4凹溝55に差し込むようにして装着する。第2電極11は塔本体50の後部64の下端に接続体110を配置し、第1電極10は塔本体50の前部65の下端に接続体100を配置している。したがって、第1電極10の接続体100は第2電極11の接続体110よりも下方に位置し、ショートすることがない。なお、第2電極11のC電極体11Cが装着される第2凹溝53は、塔本体50の前部65に設けられているので、第4凹溝55が設けられている塔本体50の後部64の下端と同レベルの位置まで切欠かれている。   As shown in FIG. 6, in the first electrode 10 and the second electrode 11, the connection body 100 and the connection body 110 are disposed on the lower side of the tower main body 50 so as to be orthogonal to each other, and the A electrode body 10A is a first concave groove 52, the B electrode body 10B is inserted into the third recessed groove 54, the C electrode body 11C is inserted into the second recessed groove 53, and the D electrode body 11D is inserted into the fourth recessed groove 55. The second electrode 11 has the connector 110 disposed at the lower end of the rear portion 64 of the tower main body 50, and the first electrode 10 has the connector 100 disposed at the lower end of the front portion 65 of the tower main body 50. Therefore, the connection body 100 of the first electrode 10 is located below the connection body 110 of the second electrode 11 and does not short. The second recessed groove 53 to which the C electrode body 11C of the second electrode 11 is attached is provided in the front portion 65 of the tower main body 50, so that the fourth recessed groove 55 is provided in the tower main body 50. It is notched to the same level as the lower end of the rear 64.

A電極体10A、B電極体10B、C電極体11C、D電極体11Dには塔本体50を貫通して高圧パルス側給電ピン(不図示)とグランド側給電ピン(不図示)が差し込まれる給電ピン差込孔66が下方位置にそれぞれ形成されている。A電極体10A、B電極体10B、C電極体11C、D電極体11Dは、給電ピン差込孔66の上方に複数設けたねじ孔(不図示)を通してねじ(不図示)が塔本体50にねじ込まれ、第1電極板10と第2電極板11が塔本体50に固定される。   A feed through which the high voltage pulse side feed pin (not shown) and the ground side feed pin (not shown) are inserted into the A electrode body 10A, the B electrode body 10B, the C electrode body 11C and the D electrode body 11D. Pin insertion holes 66 are respectively formed at lower positions. Screws (not shown) pass through the screw holes (not shown) provided on the upper side of the feed pin insertion holes 66 in the tower main body 50 for the A electrode body 10A, B electrode body 10B, C electrode body 11C, and D electrode body 11D. The first electrode plate 10 and the second electrode plate 11 are fixed to the column main body 50 by screwing.

前記高圧パルス側給電ピンとグランド側給電ピンは、例えばチャンバー本体21に取付けた高圧パルス接続端子(不図示)と、グランド接続端子(不図示)にそれぞれ不図示の給電線を介して接続される。電源部12は、不図示の接続線を介して前記高圧パルス接続端子とグランド接続端子に接続される。   The high-voltage pulse-side power supply pin and the ground-side power supply pin are connected to, for example, a high-voltage pulse connection terminal (not shown) attached to the chamber body 21 and a ground connection terminal (not shown). The power supply unit 12 is connected to the high voltage pulse connection terminal and the ground connection terminal via a connection line (not shown).

塔本体50の外周面には、上下方向に沿って螺旋状のガイド溝67が形成されている。ガイド溝67には、軟弾性を有するチューブ7が嵌合して巻回される。チューブ7としては、輸血用、点滴用等の医療用チューブを例示することができるがこれに限定されるものではない。塔本体50の外周に巻回支持されるチューブ7の下端側に位置する一端開口7aと上端側に位置する他端開口7bは、第1排気ポート24と第2排気ポート25にそれぞれ不図示の接続パイプを介して接続される。なお、チューブ7の他端開口7bを閉塞し、一端開口7aからのみ排気するようにしても良い。その際、第2排気ポート25を閉栓する。   A spiral guide groove 67 is formed on the outer peripheral surface of the tower body 50 along the vertical direction. A soft elastic tube 7 is fitted and wound around the guide groove 67. The tube 7 may be exemplified by a medical tube for blood transfusion, infusion, etc., but it is not limited thereto. The one end opening 7a located on the lower end side of the tube 7 wound and supported on the outer periphery of the tower main body 50 and the other end opening 7b located on the upper end side are not shown in the first exhaust port 24 and the second exhaust port 25 respectively. Connected via connection pipe. The other end opening 7b of the tube 7 may be closed, and the air may be exhausted only from the one end opening 7a. At this time, the second exhaust port 25 is closed.

次に、チューブ7の表面処理操作を説明する。
本実施形態において、チューブ7の内周面を表面改質する場合、支持塔5にチューブ7をガイド溝67に嵌合して予め保持する。また、前記高圧パルス側給電ピンとグランド側給電ピンをそれぞれ第1電極板10と第2電極板11の給電ピン差込孔66に差し込む。さらに、チューブ7の一端開口7aに不図示の接続パイプを接続し、第1真空ポンプ部8との接続を行う。なお、チューブ7の他端開口7bを予め閉塞する。
Next, the surface treatment operation of the tube 7 will be described.
In the present embodiment, when the inner peripheral surface of the tube 7 is surface-modified, the tube 7 is fitted to the guide groove 67 in the support tower 5 and held in advance. Further, the high voltage pulse side feed pin and the ground side feed pin are inserted into the feed pin insertion holes 66 of the first electrode plate 10 and the second electrode plate 11, respectively. Further, a connection pipe (not shown) is connected to the one end opening 7 a of the tube 7, and the connection with the first vacuum pump unit 8 is performed. The other end opening 7b of the tube 7 is closed in advance.

そして、真空チャンバー2の蓋体23を取り外してチャンバー本体21の開口22を開放し、チューブ7が巻回保持された支持塔5を開口22からチャンバー本体21内の底部20に向けて差し入れる。支持塔5の第2係合部51を取り付け台部27の第1係合部28に係合させることにより、支持塔5が真空チャンバー2の底部20に回転不能に取付けられる。支持塔5の取付け終了後に、蓋体23をチャンバー本体21の上端に載置して開口22を閉じる。   Then, the lid 23 of the vacuum chamber 2 is removed to open the opening 22 of the chamber body 21, and the support tower 5 on which the tube 7 is wound and held is inserted from the opening 22 toward the bottom 20 in the chamber body 21. The support tower 5 is non-rotatably attached to the bottom portion 20 of the vacuum chamber 2 by engaging the second engagement portion 51 of the support tower 5 with the first engagement portion 28 of the mounting base 27. After the attachment of the support tower 5 is completed, the lid 23 is placed on the upper end of the chamber body 21 and the opening 22 is closed.

その後、第1真空ポンプ部8と第2真空ポンプ部9を駆動し、処理対象物であるチューブ7の処理対象面である内面側の気圧(P1)と処理対象物の非処理対象面側をなす真空チャンバー2内の気圧(P2)に差圧(P1<P2)が生じるように、チューブ7の内側の気圧(P1)を真空チャンバー2内の気圧(P2)よりも低くする。真空チャンバー2内の気圧(P2)は、チューブ7の外面側でプラズマが発生しない気圧に設定する。   Thereafter, the first vacuum pump unit 8 and the second vacuum pump unit 9 are driven, and the pressure (P1) on the inner surface side which is the processing target surface of the tube 7 as the processing target and the non-processing target surface side of the processing target The pressure (P1) inside the tube 7 is made lower than the pressure (P2) in the vacuum chamber 2 so that a differential pressure (P1 <P2) is generated in the pressure (P2) in the vacuum chamber 2. The air pressure (P2) in the vacuum chamber 2 is set to an air pressure at which no plasma is generated on the outer surface side of the tube 7.

塔本体50の外周面には、第1電極10のA電極体10AとB電極体10Bが対向配置され、周方向に90度の角度をずらして第2電極11のC電極体11CとD電極体11Dが配置される。   The A electrode body 10A and the B electrode body 10B of the first electrode 10 are disposed opposite to each other on the outer peripheral surface of the column main body 50, and the C electrode body 11C and the D electrode of the second electrode 11 are shifted by 90 degrees in the circumferential direction. Body 11D is placed.

すなわち、塔本体50の周方向に、A電極体10A、B電極体10B、C電極体11C、D電極体11Dの順で配置される。電源部12から第1電極10にはプラス極性の高圧パルス電圧が印加され、第2電極11にはマイナス極性のグランド電圧が印加される。すなわち、塔本体50の外周には、プラス極性の電極体(10A、10B)とマイナス極性の電極体(11C、11D)が交互に配置される。このため、チューブ7内を所定の気圧値に減圧した状態で第1電極10と第2電極11に所定電圧を印加すると、隣接する電極体間でチューブ7内にプラズマが発生し、チューブ7の内周面をプラズマ照射により親水性等を向上させた改質処理を行うことができる。   That is, in the circumferential direction of the column main body 50, the A electrode body 10A, the B electrode body 10B, the C electrode body 11C, and the D electrode body 11D are arranged in this order. A high voltage pulse voltage of positive polarity is applied from the power supply unit 12 to the first electrode 10, and a ground voltage of negative polarity is applied to the second electrode 11. That is, positive polarity electrode bodies (10A, 10B) and negative polarity electrode bodies (11C, 11D) are alternately arranged on the outer periphery of the column main body 50. Therefore, when a predetermined voltage is applied to the first electrode 10 and the second electrode 11 in a state where the pressure in the tube 7 is reduced to a predetermined pressure value, plasma is generated in the tube 7 between the adjacent electrode bodies. The inner peripheral surface can be subjected to plasma modification to improve its hydrophilicity and the like.

本実施形態において、真空チャンバー2内で被処理対象物であるチューブ7の処理対象面であるチューブ7の内側の気圧を非処理対象面である外側の気圧よりも低くして差圧状態を生成している。処理対象面と非処理対象面に生じる差圧は、被処理対象物が差圧で潰れない範囲に設定する。非処理対象面側の気圧は、プラズマが発生する気圧(閾値)を下回らない、すなわちプラズマが発生しない気圧よりも高い範囲で設定する。なお、前記閾値はプラズマの電源電圧に応じた値である。また、前記差圧の許容度は、被処理対象物の強度により異なるが、例えばペットボトルと試験管ではペットボトルの方が差圧は小さい。   In the present embodiment, the pressure inside the tube 7 which is the processing target surface of the tube 7 which is the processing target in the vacuum chamber 2 is lower than the pressure inside the outside which is the non-processing target surface to generate a differential pressure state. doing. The differential pressure generated between the processing target surface and the non-processing target surface is set in a range in which the processing target is not crushed by the differential pressure. The atmospheric pressure on the non-processing target surface side is set in a range which is not lower than the atmospheric pressure (threshold) at which plasma is generated, that is, higher than the atmospheric pressure at which plasma is not generated. The threshold is a value corresponding to the power supply voltage of plasma. Moreover, although the tolerance of the said differential pressure changes with the intensity | strengths of a to-be-processed object, a plastic bottle and a test tube, for example, a smaller differential pressure in a plastic bottle.

したがって、変形強度が高い潰れ難いチューブ7に対しては、内側だけ減圧することができる。一方、変形強度が低い潰れやすいチューブ7に対しては、チューブ7の内側と外側の両方を減圧する。例えば、チューブ7内の気圧(P1)を200Pa、チューブ7外の気圧(P2)を2000Paに設定し、チューブ7内のみにプラズマが発生し、チューブ7外にプラズマが発生しないようにチューブ7の外側、すなわち真空チャンバー2内の気圧をチューブ7内の気圧よりもやや高めに設定する。真空チャンバー2内の気圧は圧力計37によりチェックすることで、真空チャンバー2内にプラズマが発生しない気圧を維持することができる。   Therefore, only the inner side can be depressurized with respect to the tube 7 having high deformation strength, which is difficult to be crushed. On the other hand, for a crushable tube 7 having a low deformation strength, both the inside and the outside of the tube 7 are depressurized. For example, the air pressure (P1) in the tube 7 is set to 200 Pa, the air pressure (P2) outside the tube 7 to 2000 Pa, plasma is generated only in the tube 7, and plasma is not generated outside the tube 7. The pressure inside the vacuum chamber 2 is set to be slightly higher than the pressure inside the tube 7. By checking the pressure in the vacuum chamber 2 with the pressure gauge 37, the pressure at which no plasma is generated in the vacuum chamber 2 can be maintained.

次に、本実施形態の効果を説明する。
本実施形態によれば、チューブ7を塔本体52に螺旋状に巻回するようにしているので、チューブ7が長くても小さなスペースでチューブ7の内表面をプラズマ照射により表面改質処理を行うことができる。
Next, the effects of the present embodiment will be described.
According to the present embodiment, since the tube 7 is spirally wound around the column main body 52, the inner surface of the tube 7 is surface-modified by plasma irradiation in a small space even if the tube 7 is long. be able to.

また、塔本体50の外周面に螺旋状にガイド溝67を設けてチューブ7を嵌合して保持しているので、塔本体50へのチューブ7の取り付けが容易なので、所定長さのチューブ7を短時間に多数本処理することができる。   In addition, since the guide groove 67 is provided spirally on the outer peripheral surface of the tower main body 50 and the tube 7 is fitted and held, the tube 7 can be easily attached to the tower main body 50. Can be processed in large numbers in a short time.

また、第2真空ポンプ部9により、チューブの変形強度の大小に応じてチューブ7の内外の差圧を調節することで、チューブの圧潰を防止して、チューブ7内の内周表面のみに表面改質処理を施すことができる。   Further, by adjusting the differential pressure between the inside and the outside of the tube 7 according to the magnitude of the deformation strength of the tube by the second vacuum pump unit 9, crushing of the tube is prevented, and the surface only on the inner peripheral surface inside the tube 7 It can be reformed.

さらに、チューブ7が巻回される塔本体50の外周面に周方向に沿って正極と負極の電極板(A電極体、B電極体、C電極体、D電極体)10、11を交互に配置することで、隣接するA電極体10A、B電極体10B、C電極体11C、D電極体11D間でプラズマが発生する。このため、正極と負極の電極板10、11の配置を塔本体50に配置でき、電極板(電極体)の配置の自由度が増し、装置のコンパクト化を図ることができる。   Furthermore, the positive and negative electrode plates (A electrode body, B electrode body, C electrode body, D electrode body) 10 and 11 are alternately arranged along the circumferential direction on the outer peripheral surface of the column main body 50 on which the tube 7 is wound. By arranging, plasma is generated between the adjacent A electrode body 10A, B electrode body 10B, C electrode body 11C, and D electrode body 11D. For this reason, the arrangement of the electrode plates 10 and 11 of the positive electrode and the negative electrode can be arranged in the column main body 50, the degree of freedom in the arrangement of the electrode plates (electrode bodies) is increased, and the apparatus can be made compact.

また、支持塔5の交換は、蓋体23をチャンバー本体21から取り外し、チャンバー本体21の開口22から支持塔5をチャンバー本体21内に降ろすという簡単な操作で取り付け台部27に支持塔5が取り付けることができ、また逆に引き上げるだけで処理済みのチューブ7が取り付けられた支持塔5を容易に取り出すことができる。   Further, the support tower 5 is removed from the chamber body 21 by the simple operation of removing the lid 23 from the chamber body 21 and lowering the support tower 5 into the chamber body 21 from the opening 22 of the chamber body 21. It is possible to easily take out the support tower 5 to which the treated tube 7 is attached, which can be attached or simply pulled up in reverse.

さらに、予めチューブ7を取り付けた支持塔5を複数用意しておけば、処理終了から次の処理までの交換時間を短縮することができ、処理効率をアップさせることができる。   Furthermore, if a plurality of supporting towers 5 to which the tubes 7 are attached are prepared in advance, the exchange time from the end of the process to the next process can be shortened, and the process efficiency can be improved.

〔第2実施形態〕
次に、本発明の第2実施形態を説明する。図7及び図8は、本実施形態を示す図である。
Second Embodiment
Next, a second embodiment of the present invention will be described. 7 and 8 are diagrams showing this embodiment.

図7は、支持塔200の分解斜視図である。図8は、図7のA−A線に沿った断面図である。なお、第1実施形態に示す部材と同じ部材には同じ符号を付してその説明を省略する。   FIG. 7 is an exploded perspective view of the support tower 200. FIG. FIG. 8 is a cross-sectional view taken along the line A-A of FIG. In addition, the same code | symbol is attached | subjected to the same member as the member shown in 1st Embodiment, and the description is abbreviate | omitted.

まず、支持塔200の構成を説明する。
図7及び図8において、第2実施形態の支持塔200は、円筒形状に形成された塔本体201の下端部に、第1実施形態の支持塔5に設けた第2係合部51と同構造の第3係合部(不図示)が設けられている。支持塔200は、図1に示す真空チャンバー2の取り付け台部27に設けた第1係合部28に係合し、真空チャンバー2の底部に取り出し可能に取付けられる。
First, the configuration of the support tower 200 will be described.
In FIG. 7 and FIG. 8, the support tower 200 of the second embodiment is the same as the second engaging portion 51 provided in the support tower 5 of the first embodiment at the lower end portion of the tower body 201 formed in a cylindrical shape. A third engagement portion (not shown) of the structure is provided. The support tower 200 engages with the first engaging portion 28 provided on the mounting base 27 of the vacuum chamber 2 shown in FIG. 1 and is removably attached to the bottom of the vacuum chamber 2.

支持塔200の塔本体201は、第1実施形態に示す第1電極板10と第2電極板11が取付けられる。塔本体201の外周面に第1凹溝202〜第4凹溝205が等角度間隔で形成され、第1電極板10のA電極体10Aを第1凹溝202、B電極体10Bを第3凹溝204、第2電極板11のC電極体11Cを第2凹溝203、D電極体11Dを第4凹溝205に差し込むようにして装着する。   The first electrode plate 10 and the second electrode plate 11 shown in the first embodiment are attached to the tower body 201 of the support tower 200. The first to fourth concave grooves 202 to 205 are formed at equal angular intervals on the outer peripheral surface of the tower main body 201, and the A electrode body 10A of the first electrode plate 10 is formed as the first concave groove 202 and the B electrode body 10B is as the third. The concave groove 204 and the C electrode body 11C of the second electrode plate 11 are inserted into the second concave groove 203 and the D electrode body 11D so as to be inserted.

本実施形態では、高圧パルスが印加される第1電極板10を塔本体201の下側から装着し、グランド側電圧が印加される第2電極板11を塔本体201の上側から装着している。塔本体201は上端と下端の端面が共に平坦面に形成されているので、第1電極板10と第2電極板11を塔本体201の上端又は下端側から装着すると、第1電極10の接続体100と第2電極11の接続体110がショートする。しかし、本実施形態では第1電極板10と第2電極板11が塔本体201の上端側と下端側に別々に配置しているので、ショートすることがない。   In the present embodiment, the first electrode plate 10 to which a high voltage pulse is applied is mounted from the lower side of the tower body 201, and the second electrode plate 11 to which the ground voltage is applied is mounted from the upper side of the tower body 201. . Since the end faces of the upper end and the lower end of the tower body 201 are both formed flat, when the first electrode plate 10 and the second electrode plate 11 are mounted from the upper end or the lower end side of the tower body 201, connection of the first electrode 10 is performed. The connection body 110 of the body 100 and the second electrode 11 shorts. However, in the present embodiment, since the first electrode plate 10 and the second electrode plate 11 are separately disposed on the upper end side and the lower end side of the tower main body 201, a short circuit does not occur.

塔本体201の外周面にチューブ7が螺旋状に巻回される。塔本体201の外周面に螺旋状に巻回されたチューブ7の両端部は、チューブ止め手段である第1チューブ端部押え体206と第2チューブ端部押え体207により取り外し可能に保持された状態で塔本体201の外周面に押し付けられて移動不能に止められる。   The tube 7 is spirally wound around the outer peripheral surface of the tower body 201. Both ends of the tube 7 spirally wound around the outer peripheral surface of the column main body 201 are detachably held by the first tube end pressing body 206 and the second tube end pressing body 207 which are tube stopping means. In this state, it is pressed against the outer peripheral surface of the tower body 201 and stopped immovably.

第1チューブ端部押え体206と第2チューブ端押え体207は同一構造に形成されており、第1チューブ端部押え体206の構成について説明し、第2チューブ端押え体207の構成については、同一部材には同一の符号を付し、その説明を省略する。第1チューブ端部押え体206は、直方体形状の本体部208の一側面209の一端側にチューブ7が嵌合する半円形状の嵌合溝210が形成され、一側面209の他端に差込突起部211が前方に向けて突出している。   The first tube end pressing member 206 and the second tube end pressing member 207 are formed in the same structure, and the configuration of the first tube end pressing member 206 will be described. The configuration of the second tube end pressing member 207 will be described. The same reference numerals are given to the same members, and the description thereof will be omitted. In the first tube end pressing member 206, a semicircular fitting groove 210 in which the tube 7 is fitted is formed on one end side of one side surface 209 of the rectangular parallelepiped main body portion 208, and The insertion protrusion 211 protrudes forward.

第1チューブ押え体206の嵌合溝210にチューブ7の一端部を嵌合し、第2チューブ押え体207の嵌合溝210にチューブ7の他端部を嵌合させた状態で、塔本体201の外周面にチューブ7を螺旋状に巻回する。その際、巻回始端側の第1チューブ端部押え体206の差込突起部211を例えば塔本体201の外周面の下部に形成した差込孔212に取り外し可能に差し込んで固定する。チューブ7を塔本体201の外周面に対して螺旋状に巻き終えると、チューブ7の他端部に設けた第2チューブ押え体207の差込突起部211を塔本体201の外周面に形成した他の差込孔212に差し込んで固定する。   One end portion of the tube 7 is fitted in the fitting groove 210 of the first tube pressing body 206, and the other end portion of the tube 7 is fitted in the fitting groove 210 of the second tube pressing body 207. The tube 7 is spirally wound around the outer peripheral surface of the tube 201. At that time, the insertion protrusion 211 of the first tube end pressing member 206 on the winding start end side is removably inserted and fixed in, for example, the insertion hole 212 formed in the lower part of the outer peripheral surface of the tower main body 201. When the tube 7 is spirally wound around the outer peripheral surface of the tower main body 201, the insertion protrusion 211 of the second tube presser body 207 provided at the other end of the tube 7 is formed on the outer peripheral surface of the tower main body 201 It inserts in another insertion hole 212, and fixes.

塔本体201の外周面に螺旋状に巻回されたチューブ7は、下方に位置する一端部と上方に位置する他端部が第1チューブ押え体206と第2チューブ押え体207を介して塔本体201の外周面に固定されるので、チューブ7は塔本体201の外周面に螺旋状に巻回した状態に保持される。   The tube 7 spirally wound around the outer peripheral surface of the tower body 201 has one end located below and the other end located above the tower via the first tube presser 206 and the second tube presser 207. Since the tube 7 is fixed to the outer peripheral surface of the main body 201, the tube 7 is held in a state of being spirally wound around the outer peripheral surface of the tower main body 201.

次に、本実施形態の効果を説明する。
本実施形態では、チューブ7の長さに応じて巻回する際のピッチを変更することで、チューブ7を塔本体201に対して螺旋状に巻回した状態に保持することができる。チューブ7が長ければ、巻回するピッチを小さくし、短ければ巻回するピッチを大きくする。なお、差込突起部211が差し込まれる差込孔212を塔本体201の外周面に周方向及び上下方向に複数個所設けることにより、チューブ7の長さに関係なく同じピッチでチューブ7を塔本体201の外周面に取り付けることができる。
Next, the effects of the present embodiment will be described.
In the present embodiment, by changing the pitch at the time of winding according to the length of the tube 7, the tube 7 can be held in a spirally wound state with respect to the tower main body 201. If the tube 7 is long, the winding pitch is reduced, and if it is short, the winding pitch is increased. In addition, by providing the insertion holes 212 into which the insertion projections 211 are inserted at a plurality of circumferential and vertical directions on the outer peripheral surface of the tower main body 201, the tubes 7 can be tower main body at the same pitch regardless of the length of the tubes 7. It can be attached to the outer peripheral surface of 201.

本実施形態によれば、長さの異なるチューブ7を塔本体201に螺旋状に巻回保持することができる。このため、チューブ7の長さ毎に塔本体201を用意する必要がない。   According to the present embodiment, the tubes 7 having different lengths can be spirally wound and held on the tower main body 201. For this reason, it is not necessary to prepare the tower main body 201 for every length of the tube 7.

〔変形例〕
なお、上記第1及び第2実施形態において、平面コ字形状の第1電極10と第2電極11塔本体50に対して直交するように配置し、正極と負極のそれぞれ2本の電極体(10A、10B、11A、11B)を交互に配置しているが、正極と負極のそれぞれ3本又はそれ以上の電極体を交互に配置するようにしても良い。
[Modification]
In the first and second embodiments described above, the first electrode 10 and the second electrode 11 of the planar U-shape are disposed orthogonal to the column body 50, and each of the positive and negative electrode bodies Although 10A, 10B, 11A, 11B) are alternately arranged, three or more electrode bodies of positive electrode and negative electrode may be alternately arranged.

また、上記第1及び第2実施形態並びにその変形例においては、支持塔5、200は円筒形状に形成しているが、円柱形状でも良く、角筒形状、角柱形状であっても良い。   Further, in the first and second embodiments and the modification thereof, the support towers 5 and 200 are formed in a cylindrical shape, but may be in a cylindrical shape, may be in a square cylinder shape or in a prismatic shape.

また、上記第1及び第2実施形態並びにその変形例においては、支持塔5、200を真空チャンバー2の底部20に取付ける取付手段として、第1係合部28と第2係合部51とを係合させて上下方向の軸回りに回転不能としているが、この構成に限定されるものではなく、支持塔5、200が底部20に取り外し可能に取り付けできる構成であれば良い。   In the first and second embodiments and their modifications, the first engaging portion 28 and the second engaging portion 51 are used as attachment means for attaching the support towers 5 and 200 to the bottom portion 20 of the vacuum chamber 2. It is engaged and made non-rotatable about the vertical axis, but it is not limited to this configuration, as long as the support towers 5 and 200 can be removably attached to the bottom 20.

また、上記第1及び第2実施形態並びにその変形例においては、コイル状のチューブを塔本体200に取り付けても良い。   Further, in the first and second embodiments and their modifications, a coiled tube may be attached to the tower body 200.

1…チューブの表面処理装置、 2…真空チャンバー、 5…支持塔、 7…チューブ、 7a…一端開口、 7b…他端開口、 8…第1真空ポンプ部、 9…第2真空ポンプ部、 10…第1電極、 11…第2電極、 10A…A電極体、 10B…B電極体、 100…接続体、 110…接続体、 11C…C電極体、 11D…D電極体、 12…電源部、 20…底部、 21…チャンバー本体、 22…開口、 23…蓋体、 24…第1排気ポート、 25…第2排気ポート、 26…底穴部、 27…取り付け台、 28…第1係合部、 29…台本体部、 30…上面、 31a〜31d…取り付けピン、 32a〜32d…係合孔、 33…前部、 34…後部、 35…段差、 36…第3排気ポート、 37…圧力計、 50…塔本体、 51…第2係合部、 52〜55…第1凹溝〜第4凹溝、 56…内径孔、 57〜60…第1係合片〜第4係合片、 61…後部、 62…前部、 63…段差、 64…後部、 65…前部、 66…給電ピン差込孔、 67…ガイド溝、 200…支持塔、 201…塔本体、 202〜205…第1凹溝〜第4凹溝、 206…第1チューブ端部押え体、 207…第2チューブ端部押え体、 208…本体部、 209…一側面、 210…嵌合溝、 211…差込突起部、 212…差込孔、 213…高圧パルス側給電ピン、 214…グランド側給電ピン DESCRIPTION OF SYMBOLS 1 ... Surface treatment apparatus of a tube, 2 ... Vacuum chamber, 5 ... Support tower, 7 ... Tube, 7a ... One end opening, 7b ... Other end opening, 8 ... 1st vacuum pump part, 9 ... 2nd vacuum pump part, 10 ... 1st electrode, 11 ... 2nd electrode, 10A ... A electrode body, 10B ... B electrode body, 100 ... connection body, 110 ... connection body, 11C ... C electrode body, 11D ... D electrode body, 12 ... power supply section, DESCRIPTION OF SYMBOLS 20 ... Bottom part 21 ... Chamber body, 22 ... Opening, 23 ... Lid, 24 ... 1st exhaust port, 25 ... 2nd exhaust port, 26 ... Bottom hole part 27 ... Mounting stand, 28 ... 1st engagement part , 29: base body portion 30, 30: upper surface, 31a to 31d, mounting pin, 32a to 32d, engaging hole, 33: front, 34: rear, 35: step, 36: third exhaust port, 37: pressure gauge , 50 ... tower body, 51 second engaging portion 52 to 55 first recessed groove to fourth recessed groove 56 inner diameter hole 57 to 60 first engaging piece to fourth engaging piece 61 rear portion 62 front Parts 63 Step difference 64 Rear part 65 Front part 66 Feeding pin insertion hole 67 Guide groove 200 Support tower 201 Tower body 202 to 205 First concave groove to fourth concave Groove: 206 First tube end pressing body 207: Second tube end pressing body 208: Main body portion 209: One side 210: Fitting groove 211: Insertion protrusion 212: Insertion hole , 213 ... High voltage pulse side feed pin, 214 ... Ground side feed pin

Claims (7)

弾性変形可能又はコイル状のチューブの内面をプラズマ照射により表面処理するチューブの表面処理装置であって、
真空チャンバーと、
前記真空チャンバー内に配置され、塔本体の外周に前記弾性変形可能なチューブが螺旋状に巻回されて取り付けられ、又は前記コイル状のチューブが取り付けられる支持塔と、
前記塔本体の外周に周方向に沿って配置された複数の第1電極体と、
前記塔本体の外周に周方向に沿って前記第1電極体の間に配置された複数の第2電極体と、
前記第1電極体と前記第2電極体に所定電圧を印加する電源部と、
前記塔本体に取り付けられるチューブに接続されて前記チューブ内の気体を排気し、前記チューブ内にプラズマが発生する気圧に減圧する第1真空ポンプ部と、
を有することを特徴とするチューブの表面処理装置。
A tube surface treatment apparatus for treating the inner surface of an elastically deformable or coiled tube by plasma irradiation, comprising:
With a vacuum chamber,
A support tower disposed in the vacuum chamber, the elastically deformable tube being helically wound and attached to the outer periphery of a tower body, or the coiled tube being attached;
A plurality of first electrode bodies disposed along the circumferential direction on the outer periphery of the tower body;
A plurality of second electrode bodies disposed between the first electrode bodies along the circumferential direction on the outer periphery of the tower body;
A power supply unit for applying a predetermined voltage to the first electrode body and the second electrode body;
A first vacuum pump unit connected to a tube attached to the column body to evacuate gas in the tube and reduce the pressure to a pressure at which plasma is generated in the tube;
An apparatus for treating a surface of a tube, comprising:
請求項1において、
前記チューブの両端部は、前記チューブの両端部に取り付けられるチューブ止め手段により前記塔本体の外周面に取り外し可能に止められることを特徴とするチューブの表面処理装置。
In claim 1,
The tube surface treatment apparatus is characterized in that both end portions of the tube are detachably fixed to the outer peripheral surface of the tower body by tube stoppers attached to both ends of the tube.
請求項1において、
前記塔本体の外周面に前記チューブが嵌合する嵌合溝を螺旋状に形成したことを特徴とするチューブの表面処理装置。
In claim 1,
A fitting groove into which the tube fits is formed in a spiral on the outer peripheral surface of the tower body.
請求項1乃至3のいずれか1項において、
前記支持塔は、前記真空チャンバー内に取り出し可能に取り付けられていることを特徴とするチューブの表面処理装置。
In any one of claims 1 to 3,
The apparatus for treating a surface of a tube, wherein the support tower is removably mounted in the vacuum chamber.
請求項1乃至4のいずれか1項において、
前記真空チャンバー内の気体を排気して、前記チューブ内の気圧よりも高く前記真空チャンバー内でプラズマが発生しない圧力に減圧し、前記チューブ内の気圧との間に生じる差圧を調節可能とする第2真空ポンプ部を有することを特徴とするチューブの表面処理装置。
In any one of claims 1 to 4,
The gas in the vacuum chamber is exhausted to reduce the pressure higher than the pressure in the tube to a pressure at which no plasma is generated in the vacuum chamber, and the differential pressure generated between the pressure in the tube and the pressure in the tube can be adjusted. A tube surface treatment apparatus comprising a second vacuum pump unit.
請求項1乃至5のいずれか1項において、
前記真空チャンバーは、縦長有底の筒体形状に形成されたチャンバー本体と、前記チャンバー本体の上端開口を塞ぐ蓋体と、を有し、前記上端開口を通して前記支持塔を取り出し可能とすることを特徴とするチューブの表面処理装置。
In any one of claims 1 to 5,
The vacuum chamber has a chamber main body formed in a cylindrical shape with a vertical bottom and a lid closing an upper end opening of the chamber main body, and the support tower can be taken out through the upper end opening. The tube surface treatment device to be characterized.
被処理対象物の内面及び外面のうち一方の面をプラズマ照射により処理するプラズマ処理装置であって、
気圧をそれぞれ調整可能な2つの空間のうち一方の空間に前記被処理対象物の内面を、他方の空間に前記被処理対象物の外面を配置した状態で前記2つの空間の差圧が所定条件となるように前記一方の空間の気圧及び前記他方の空間の気圧を減圧するとともに、前記一方の空間の気圧を前記他方の空間の気圧よりも低くすることを特徴とするプラズマ処理装置。
A plasma processing apparatus for processing one of the inner and outer surfaces of an object to be treated by plasma irradiation, comprising:
With the inner surface of the object to be treated disposed in one of the two spaces in which the air pressure can be adjusted and the outer surface of the object to be treated disposed in the other space, the differential pressure between the two spaces is a predetermined condition The pressure in the one space and the pressure in the other space are reduced so that the pressure in the one space is lower than the pressure in the other space.
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Publication number Priority date Publication date Assignee Title
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JPS61197638A (en) * 1985-02-28 1986-09-01 Sumitomo Bakelite Co Ltd Method and apparatus for carrying out plasma treatment
JPH0265866A (en) * 1988-07-01 1990-03-06 Becton Dickinson & Co Apparatus and method for plasma treatment of small diameter tube
JPH05222230A (en) * 1992-02-13 1993-08-31 Nippon Steel Corp Method of coating tube inside surface
JPH05222229A (en) * 1992-02-13 1993-08-31 Nippon Steel Corp Method of coating tube inside surface
JP2008192567A (en) * 2007-02-07 2008-08-21 Tohoku Univ In-capillary plasma generation method, thin film deposition method using it, and capillary inside wall surface reforming method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111250016A (en) * 2020-02-06 2020-06-09 徐国栋 Liquid plasma device for treating tumor and skin disease

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