JP2019071369A - プラズマ処理装置、フォーカスリングの昇降制御方法およびフォーカスリングの昇降制御プログラム - Google Patents
プラズマ処理装置、フォーカスリングの昇降制御方法およびフォーカスリングの昇降制御プログラム Download PDFInfo
- Publication number
- JP2019071369A JP2019071369A JP2017197313A JP2017197313A JP2019071369A JP 2019071369 A JP2019071369 A JP 2019071369A JP 2017197313 A JP2017197313 A JP 2017197313A JP 2017197313 A JP2017197313 A JP 2017197313A JP 2019071369 A JP2019071369 A JP 2019071369A
- Authority
- JP
- Japan
- Prior art keywords
- focus ring
- wafer
- height
- plasma processing
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/21—Focus adjustment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2446—Position sensitive detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24495—Signal processing, e.g. mixing of two or more signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
- H01J2237/24578—Spatial variables, e.g. position, distance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Abstract
Description
[プラズマ処理装置の構成]
最初に、第1実施形態に係るプラズマ処理装置10の概略的な構成を説明する。図1は、プラズマ処理装置の概略的な構成を示す概略断面図である。プラズマ処理装置10は、気密に構成され、電気的に接地電位とされた処理容器1を有している。この処理容器1は、円筒状とされ、例えば表面に陽極酸化被膜が形成されたアルミニウム等から構成されている。処理容器1は、プラズマが生成される処理空間を画成する。処理容器1内には、被処理体(work-piece)であるウェハWを水平に支持する第1の載置台2が収容されている。
次に、図2を参照して、第1実施形態に係る第1の載置台2及び第2の載置台7の要部構成について説明する。図2は、第1の載置台及び第2の載置台の要部構成を示す概略断面図である。
次に、制御部100について詳細に説明する。図6は、第1実施形態に係るプラズマ処理装置を制御する制御部の概略的な構成を示したブロック図である。制御部100は、通信インターフェース160と、プロセスコントローラ161と、ユーザインターフェース162と、記憶部163とが設けられている。
次に、第2実施形態について説明する。第2実施形態に係るプラズマ処理装置10は、図1から図3に示す第1実施形態に係るプラズマ処理装置10の構成と同様であるため、説明を省略する。
2 第1の載置台
5 フォーカスリング
7 第2の載置台
10 プラズマ処理装置
100 制御部
110 測定部
120 昇降機構
161a 取得部
161b 算出部
161c 昇降制御部
163a 状態情報
W ウェハ
Claims (6)
- プラズマ処理の対象とされた被処理体を載置する載置台と、
前記被処理体の周囲に載置されたフォーカスリングを昇降させる昇降機構と、
前記被処理体の状態を測定した状態情報を取得する取得部と、
前記取得部により取得された状態情報により示される前記被処理体の状態に基づき、前記被処理体の上面と、前記フォーカスリングの上面との位置関係が予め定められた距離間隔になる前記フォーカスリングの高さを算出する算出部と、
前記フォーカスリングが前記算出部により算出された高さとなるように前記昇降機構を制御する昇降制御部と、
を有するプラズマ処理装置。 - 前記被処理体の状態は、前記被処理体の厚さ、前記被処理体の外径の一方または両方とする
ことを特徴とする請求項1に記載のプラズマ処理装置。 - 前記フォーカスリングの上面の高さを測定する測定部をさらに有し、
前記算出部は、前記被処理体の状態および前記測定部により測定された前記フォーカスリングの上面の高さに基づき、位置関係が予め定められた距離間隔になる前記フォーカスリングの高さを算出する
ことを特徴とする請求項1または2に記載のプラズマ処理装置。 - 前記昇降機構は、前記フォーカスリングの周方向に複数の位置に設けられ、
前記状態情報は、前記被処理体の周方向に対して複数の位置での状態の測定結果を含み、
前記算出部は、前記状態情報により示される複数の位置での状態の測定結果に基づき、前記フォーカスリングの周方向の複数の位置それぞれについて、前記被処理体の上面と、前記フォーカスリングの上面との位置関係が予め定められた距離間隔になる前記フォーカスリングの高さを算出し、
昇降制御部は、算出された高さとなるように前記昇降機構をそれぞれ制御する
ことを特徴とする請求項3に記載のプラズマ処理装置。 - プラズマ処理の対象とされた被処理体の状態を測定した状態情報を取得し、
取得された状態情報により示される前記被処理体の状態に基づき、載置台に載置された前記被処理体の上面と、前記被処理体の周囲に載置されたフォーカスリングの上面との位置関係が予め定められた距離間隔になる前記フォーカスリングの高さを算出し、
前記フォーカスリングが、算出された高さとなるように、前記フォーカスリングを昇降させる昇降機構を制御する、
処理をコンピュータが実行することを特徴とするフォーカスリングの昇降制御方法。 - プラズマ処理の対象とされた被処理体の状態を測定した状態情報を取得し、
取得された状態情報により示される前記被処理体の状態に基づき、載置台に載置された前記被処理体の上面と、前記被処理体の周囲に載置されたフォーカスリングの上面との位置関係が予め定められた距離間隔になる前記フォーカスリングの高さを算出し、
前記フォーカスリングが、算出された高さとなるように、前記フォーカスリングを昇降させる昇降機構を制御する、
処理をコンピュータに実行させることを特徴とするフォーカスリングの昇降制御プログラム。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017197313A JP6966286B2 (ja) | 2017-10-11 | 2017-10-11 | プラズマ処理装置、フォーカスリングの昇降制御方法およびフォーカスリングの昇降制御プログラム |
TW107133958A TWI793180B (zh) | 2017-10-11 | 2018-09-27 | 電漿處理裝置、聚焦環之升降控制方法及聚焦環之升降控制程式 |
US16/156,384 US20190108986A1 (en) | 2017-10-11 | 2018-10-10 | Plasma processing apparatus, and method and program for controlling elevation of focus ring |
KR1020180120565A KR102591950B1 (ko) | 2017-10-11 | 2018-10-10 | 플라즈마 처리 장치, 포커스 링의 승강 제어 방법 및 포커스 링의 승강 제어 프로그램 |
CN201811183235.3A CN109659216B (zh) | 2017-10-11 | 2018-10-11 | 等离子体处理装置、聚焦环的升降控制方法和程序 |
US17/954,169 US20230013805A1 (en) | 2017-10-11 | 2022-09-27 | Plasma processing apparatus, and method and program for controlling elevation of focus ring |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017197313A JP6966286B2 (ja) | 2017-10-11 | 2017-10-11 | プラズマ処理装置、フォーカスリングの昇降制御方法およびフォーカスリングの昇降制御プログラム |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019071369A true JP2019071369A (ja) | 2019-05-09 |
JP6966286B2 JP6966286B2 (ja) | 2021-11-10 |
Family
ID=65993444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017197313A Active JP6966286B2 (ja) | 2017-10-11 | 2017-10-11 | プラズマ処理装置、フォーカスリングの昇降制御方法およびフォーカスリングの昇降制御プログラム |
Country Status (5)
Country | Link |
---|---|
US (2) | US20190108986A1 (ja) |
JP (1) | JP6966286B2 (ja) |
KR (1) | KR102591950B1 (ja) |
CN (1) | CN109659216B (ja) |
TW (1) | TWI793180B (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200141580A (ko) * | 2019-06-10 | 2020-12-21 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
KR20210003984A (ko) * | 2019-07-02 | 2021-01-13 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
JP2021027123A (ja) * | 2019-08-02 | 2021-02-22 | 東京エレクトロン株式会社 | エッジリング、載置台、基板処理装置及び基板処理方法 |
KR20210151692A (ko) | 2020-06-05 | 2021-12-14 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 |
US11984301B2 (en) | 2019-08-02 | 2024-05-14 | Tokyo Electron Limited | Edge ring, substrate support, substrate processing apparatus and method |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11488808B2 (en) * | 2018-11-30 | 2022-11-01 | Tokyo Electron Limited | Plasma processing apparatus, calculation method, and calculation program |
JP2020155489A (ja) * | 2019-03-18 | 2020-09-24 | キオクシア株式会社 | 半導体製造装置および半導体装置の製造方法 |
JP7296829B2 (ja) * | 2019-09-05 | 2023-06-23 | 東京エレクトロン株式会社 | プラズマ処理装置、処理方法、上部電極構造 |
KR102114891B1 (ko) * | 2019-11-18 | 2020-05-26 | 주식회사 기가레인 | 플라즈마 처리 장치 |
US11589474B2 (en) | 2020-06-02 | 2023-02-21 | Applied Materials, Inc. | Diagnostic disc with a high vacuum and temperature tolerant power source |
US11924972B2 (en) | 2020-06-02 | 2024-03-05 | Applied Materials, Inc. | Diagnostic disc with a high vacuum and temperature tolerant power source |
CN113838732B (zh) * | 2020-06-08 | 2023-10-31 | 中微半导体设备(上海)股份有限公司 | 一种聚焦环升降机构、安装方法及等离子体处理装置 |
JP2022042379A (ja) * | 2020-09-02 | 2022-03-14 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
KR20220075007A (ko) * | 2020-11-26 | 2022-06-07 | 삼성전자주식회사 | 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조방법 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002176030A (ja) * | 2000-12-07 | 2002-06-21 | Semiconductor Leading Edge Technologies Inc | プラズマエッチング装置、及びプラズマエッチング方法 |
JP2002261084A (ja) * | 2001-03-05 | 2002-09-13 | Matsushita Electric Ind Co Ltd | ドライエッチング方法及び装置 |
US20030201069A1 (en) * | 2000-09-18 | 2003-10-30 | Johnson Wayne L. | Tunable focus ring for plasma processing |
JP2010034416A (ja) * | 2008-07-30 | 2010-02-12 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
JP2012204806A (ja) * | 2011-03-28 | 2012-10-22 | Tokyo Electron Ltd | 判定方法、制御方法、判定装置、パターン形成システム及びプログラム |
JP2013058766A (ja) * | 2004-09-27 | 2013-03-28 | Lam Research Corporation | プラズマ加工ステップセットの調整方法及び装置 |
WO2017131927A1 (en) * | 2016-01-26 | 2017-08-03 | Applied Materials, Inc. | Wafer edge ring lifting solution |
CN107240541A (zh) * | 2016-03-29 | 2017-10-10 | 朗姆研究公司 | 用于执行边缘环表征的系统和方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6344105B1 (en) * | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
KR20080001163A (ko) * | 2006-06-29 | 2008-01-03 | 주식회사 하이닉스반도체 | 홀 휘어짐 방지를 위한 플라즈마 식각 장치 |
JP6080571B2 (ja) * | 2013-01-31 | 2017-02-15 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
CN103730318B (zh) * | 2013-11-15 | 2016-04-06 | 中微半导体设备(上海)有限公司 | 一种晶圆边缘保护环及减少晶圆边缘颗粒的方法 |
US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
US11605546B2 (en) * | 2015-01-16 | 2023-03-14 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
US10651015B2 (en) * | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
-
2017
- 2017-10-11 JP JP2017197313A patent/JP6966286B2/ja active Active
-
2018
- 2018-09-27 TW TW107133958A patent/TWI793180B/zh active
- 2018-10-10 US US16/156,384 patent/US20190108986A1/en not_active Abandoned
- 2018-10-10 KR KR1020180120565A patent/KR102591950B1/ko active IP Right Grant
- 2018-10-11 CN CN201811183235.3A patent/CN109659216B/zh active Active
-
2022
- 2022-09-27 US US17/954,169 patent/US20230013805A1/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030201069A1 (en) * | 2000-09-18 | 2003-10-30 | Johnson Wayne L. | Tunable focus ring for plasma processing |
JP2002176030A (ja) * | 2000-12-07 | 2002-06-21 | Semiconductor Leading Edge Technologies Inc | プラズマエッチング装置、及びプラズマエッチング方法 |
JP2002261084A (ja) * | 2001-03-05 | 2002-09-13 | Matsushita Electric Ind Co Ltd | ドライエッチング方法及び装置 |
JP2013058766A (ja) * | 2004-09-27 | 2013-03-28 | Lam Research Corporation | プラズマ加工ステップセットの調整方法及び装置 |
JP2010034416A (ja) * | 2008-07-30 | 2010-02-12 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
JP2012204806A (ja) * | 2011-03-28 | 2012-10-22 | Tokyo Electron Ltd | 判定方法、制御方法、判定装置、パターン形成システム及びプログラム |
WO2017131927A1 (en) * | 2016-01-26 | 2017-08-03 | Applied Materials, Inc. | Wafer edge ring lifting solution |
CN107240541A (zh) * | 2016-03-29 | 2017-10-10 | 朗姆研究公司 | 用于执行边缘环表征的系统和方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200141580A (ko) * | 2019-06-10 | 2020-12-21 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
KR102222460B1 (ko) * | 2019-06-10 | 2021-03-04 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
KR20210003984A (ko) * | 2019-07-02 | 2021-01-13 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
KR102477910B1 (ko) * | 2019-07-02 | 2022-12-16 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
JP2021027123A (ja) * | 2019-08-02 | 2021-02-22 | 東京エレクトロン株式会社 | エッジリング、載置台、基板処理装置及び基板処理方法 |
JP7321026B2 (ja) | 2019-08-02 | 2023-08-04 | 東京エレクトロン株式会社 | エッジリング、載置台、基板処理装置及び基板処理方法 |
US11984301B2 (en) | 2019-08-02 | 2024-05-14 | Tokyo Electron Limited | Edge ring, substrate support, substrate processing apparatus and method |
KR20210151692A (ko) | 2020-06-05 | 2021-12-14 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 |
Also Published As
Publication number | Publication date |
---|---|
KR102591950B1 (ko) | 2023-10-19 |
US20230013805A1 (en) | 2023-01-19 |
KR20190040912A (ko) | 2019-04-19 |
CN109659216A (zh) | 2019-04-19 |
TWI793180B (zh) | 2023-02-21 |
CN109659216B (zh) | 2021-04-30 |
TW201923891A (zh) | 2019-06-16 |
US20190108986A1 (en) | 2019-04-11 |
JP6966286B2 (ja) | 2021-11-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7055054B2 (ja) | プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム | |
KR102591950B1 (ko) | 플라즈마 처리 장치, 포커스 링의 승강 제어 방법 및 포커스 링의 승강 제어 프로그램 | |
US20230197501A1 (en) | Plasma processing apparatus | |
US20200219740A1 (en) | Plasma processing apparatus and heater temperature control method | |
TWI720060B (zh) | 用以控制電漿不穩定性之射頻電源的調頻用系統及方法 | |
JP7033926B2 (ja) | プラズマ処理装置 | |
US20180190501A1 (en) | Plasma processing apparatus | |
US20100101729A1 (en) | Process kit having reduced erosion sensitivity | |
US20140138030A1 (en) | Capacitively coupled plasma equipment with uniform plasma density | |
US20200234929A1 (en) | Plasma processing apparatus and method for measuring misalignment of ring member | |
KR20200038417A (ko) | 플라즈마 처리 장치, 및 링 부재의 두께 측정 방법 | |
KR101216701B1 (ko) | 건식 식각 장치 | |
US10923333B2 (en) | Substrate processing apparatus and substrate processing control method | |
KR20200056942A (ko) | 플라즈마 처리 장치, 및 링 부재의 형상 측정 방법 | |
US20200035465A1 (en) | Substrate processing apparatus and plasma sheath height control method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200526 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210129 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210209 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20210409 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210609 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210921 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211021 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6966286 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |