JP2019070179A5 - - Google Patents

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Publication number
JP2019070179A5
JP2019070179A5 JP2017196464A JP2017196464A JP2019070179A5 JP 2019070179 A5 JP2019070179 A5 JP 2019070179A5 JP 2017196464 A JP2017196464 A JP 2017196464A JP 2017196464 A JP2017196464 A JP 2017196464A JP 2019070179 A5 JP2019070179 A5 JP 2019070179A5
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Japan
Prior art keywords
forming method
film forming
group
periodic table
raw material
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JP2017196464A
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Japanese (ja)
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JP7023445B2 (en
JP2019070179A (en
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Priority to JP2017196464A priority Critical patent/JP7023445B2/en
Priority claimed from JP2017196464A external-priority patent/JP7023445B2/en
Priority to CN201811147185.3A priority patent/CN109628910B/en
Priority to US16/151,461 priority patent/US10927458B2/en
Publication of JP2019070179A publication Critical patent/JP2019070179A/en
Publication of JP2019070179A5 publication Critical patent/JP2019070179A5/ja
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Claims (10)

第1の元素と、第1の元素とは異なる第2の元素とを少なくとも含有する原料を霧化または液滴化し、得られたミストまたは液滴をキャリアガスで搬送し、ついで該ミストまたは液滴を熱反応させて、少なくとも前記第1の元素と前記第2の元素とを含む皮膜を成膜する方法であって、前記第1の元素が周期律表第14族又は第15族の元素であり、前記第2の元素が、Dブロック元素又は周期律表第14族元素であり、前記熱反応を、不活性ガス又は還元性ガスの雰囲気下で行うことを特徴とする成膜方法。 A first element, the raw material is atomized or liquid droplets containing at least a different second element from the first element, and transported the resulting mist or droplets in a carrier gas, then the mist or droplets by thermal reaction, at least the first element and the second a element and method of forming a film containing the first element of group 14 or group 15 of the periodic table A film forming method comprising an element, wherein the second element is a D-block element or a Group 14 element of the periodic table, and the thermal reaction is carried out in an atmosphere of an inert gas or a reducing gas. .. 前記原料が、前記第1の元素と前記第2の元素とを含む化合物である請求項1記載の成膜方法。 The raw material, the film forming method according to claim 1, wherein the compound containing the first element and the second element. 前記原料が、前記第1の元素の化合物および前記第2の元素の化合物である請求項1記載の成膜方法。 The raw material is, the first element compound and the second film forming method according to claim 1, wherein a compound of an element of. 前記第1の元素が周期律表第15族元素である請求項1〜3のいずれかに記載の成膜方法。 The film forming method according to any one of claims 1 to 3, wherein the first element is an element of Group 15 of the periodic table. 前記第1の元素が窒素である請求項1〜4のいずれかに記載の成膜方法。 The film forming method according to any one of claims 1 to 4, wherein the first element is nitrogen. 前記第2の元素が、周期律表の第4周期Dブロック元素又は第14族元素である請求項1〜5のいずれかに記載の成膜方法。 The film forming method according to any one of claims 1 to 5, wherein the second element is a 4th period D block element or a group 14 element in the periodic table. 前記第2の元素が、周期律表第14族元素である請求項1〜6のいずれかに記載の成膜方法。 The film forming method according to any one of claims 1 to 6, wherein the second element is an element of Group 14 of the periodic table. 前記原料溶液中の前記第1の元素と前記第2の元素との原子比が、1:2〜10:1である請求項1〜7のいずれかに記載の成膜方法。 The atomic ratio of the first element in the raw material solution and the second element, 1: 2-10: 1 film-forming method according to any one of claims 1 to 7. 前記熱反応を、不活性ガスの雰囲気下で行う請求項1〜8のいずれかに記載の成膜方法。 The film forming method according to any one of claims 1 to 8, wherein the thermal reaction is carried out in an atmosphere of an inert gas. 前記熱反応を、500℃以上の温度で行う請求項1〜9のいずれかに記載の成膜方法。 The film forming method according to any one of claims 1 to 9, wherein the thermal reaction is carried out at a temperature of 500 ° C. or higher.
JP2017196464A 2017-10-07 2017-10-07 Film formation method Active JP7023445B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017196464A JP7023445B2 (en) 2017-10-07 2017-10-07 Film formation method
CN201811147185.3A CN109628910B (en) 2017-10-07 2018-09-29 Method of forming film
US16/151,461 US10927458B2 (en) 2017-10-07 2018-10-04 Method of forming film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017196464A JP7023445B2 (en) 2017-10-07 2017-10-07 Film formation method

Publications (3)

Publication Number Publication Date
JP2019070179A JP2019070179A (en) 2019-05-09
JP2019070179A5 true JP2019070179A5 (en) 2020-11-19
JP7023445B2 JP7023445B2 (en) 2022-02-22

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JP2017196464A Active JP7023445B2 (en) 2017-10-07 2017-10-07 Film formation method

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Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4975299A (en) * 1989-11-02 1990-12-04 Eastman Kodak Company Vapor deposition process for depositing an organo-metallic compound layer on a substrate
JPH05345983A (en) * 1991-06-18 1993-12-27 Denki Kagaku Kogyo Kk Corrosion resistant metal member
JP2008120654A (en) * 2006-11-15 2008-05-29 Nihon Ceratec Co Ltd Ceramic-coated member and method of manufacturing the same
FI20105719A0 (en) * 2010-06-21 2010-06-21 Beneq Oy Apparatus for application of coating
WO2013192220A1 (en) * 2012-06-18 2013-12-27 University Of Florida Research Foundation, Inc. Tungsten nitrido precursors for the cvd of tungsten nitride, carbonitride, and oxide films
JP2014043640A (en) * 2012-07-31 2014-03-13 Tosoh Corp Method for manufacturing silicon-containing thin film, and silicon-containing thin film
EP3783662A1 (en) * 2014-09-02 2021-02-24 Flosfia Inc. Laminated structure and method for manufacturing same, semiconductor device, and crystalline film
JP6613520B2 (en) * 2015-03-30 2019-12-04 株式会社Flosfia Atomization apparatus and film forming apparatus
WO2016191199A1 (en) * 2015-05-22 2016-12-01 Dow Corning Corporation Diisopropylaminopentachlorodisilane
KR20180095561A (en) * 2015-12-18 2018-08-27 다우 실리콘즈 코포레이션 METHOD FOR PRODUCING ORGANO AMINOSILANE AND METHOD FOR MANUFACTURING SILYLAMINE FROM ORGANO AMINOSILANE

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