JP2019062171A - Substrate cleaning method and substrate cleaning apparatus - Google Patents

Abstract

To provide a substrate cleaning method and a substrate cleaning apparatus which are capable of not only removing particles at high removal efficiency by removing a particle holding layer together with held particles from an upper surface of a substrate but also inhibiting residues of the particle holding layer from remaining on the upper surface of the substrate or being attached again thereto.SOLUTION: A substrate cleaning method includes the steps of: supplying processing liquid that contains a solute to an upper surface of a substrate W; heating the processing liquid to form a particle holding layer 29 comprising a solute composition; supplying peeling liquid (DIW31, SC1 liquid 32) having removing properties for the particle holding layer having been formed, and peeling and removing the particle holding layer from the upper surface of the substrate W; and supplying residue removing liquid 33 having properties of dissolving the solute composition thereby to remove residues that remain on the upper surface of the substrate W.SELECTED DRAWING: Figure 5G

Description

  The present invention relates to a substrate cleaning method and a substrate cleaning apparatus. Examples of substrates to be processed include semiconductor wafers, substrates for liquid crystal displays, substrates for flat panel displays (FPDs) such as organic EL (electroluminescence) displays, etc., substrates for optical disks, substrates for magnetic disks, and magneto-optical disks. Substrates, substrates for photomasks, ceramic substrates, substrates for solar cells, etc. are included.

In the process of manufacturing a semiconductor device, various contaminants attached to a substrate, residues of processing solutions and resists used in the previous process, and various particles (hereinafter sometimes collectively referred to as "particles") may be removed. , The washing step is carried out.
In the cleaning step, the particles are chemically removed by physically removing the particles by supplying a cleaning solution such as deionized water (DIW) to the substrate, or by supplying a chemical solution which chemically reacts with the particles to the substrate. Is generally removed.

However, miniaturization and complication of patterns formed on a substrate are in progress. Therefore, it is becoming difficult to remove particles physically or chemically.
Therefore, a treatment liquid containing a solute and a solvent having volatility is supplied to the upper surface of the substrate, and a film (hereinafter referred to as "particle holding layer") formed by solidifying or curing the treatment liquid is formed, and then the particle holding is performed. Techniques have been proposed for dissolving and removing layers (US Pat.

In this method, the particles are separated from the substrate when the treatment liquid is solidified or cured to form the particle holding layer. Then, the separated particles are held in the particle holding layer.
Then, the solution processing solution is supplied to the upper surface of the substrate. As a result, the particle holding layer is dissolved and removed on the substrate, so the particles are removed from the upper surface of the substrate together with the particle holding layer (see Patent Document 1).

  Alternatively, the peeling treatment liquid may be supplied to the upper surface of the substrate. Thereby, the particle holding layer is peeled from the upper surface of the substrate. Subsequently, the solution holding liquid is supplied, whereby the particle holding layer is dissolved on the substrate (see Patent Document 2).

JP, 2014-197717, A JP, 2015-119164, A

However, in the methods of Patent Documents 1 and 2, since the particle holding layer is dissolved on the substrate, the particles may fall off from the particle holding layer being dissolved and may be reattached to the substrate. Therefore, the particle removal rate is not as high as expected.
Therefore, the inventor of the present application is examining removing the separated particle holding layer from the upper surface of the substrate without dissolving it. Specifically, after peeling the particle holding layer from the upper surface of the substrate, for example, the rinse liquid is supplied to the upper surface of the substrate to clean the upper surface of the substrate.

However, in this case, a minute residue resulting from the particle holding layer may not be peeled off from the upper surface of the substrate and may remain on the upper surface of the substrate, or the peeled residue may be reattached to the upper surface of the substrate. It has been found that there is.
Therefore, an object of the present invention is to be able to remove particles from the upper surface of the substrate with a high removal rate, and to prevent the residue of the particle holding layer from remaining or reattaching to the upper surface of the substrate. To provide a cleaning method and a substrate cleaning apparatus.

  In order to achieve the above object, according to the present invention, a process liquid supply process of supplying a process liquid containing a solute and a solvent having volatility to the upper surface of a substrate, and the process liquid supplied on the upper surface of the substrate Vaporizing at least a part of the solvent to solidify or cure the treatment liquid to form a particle holding layer on the upper surface of the substrate; and peeling the particle holding layer on the upper surface of the substrate The first substrate cleaning method includes a removing step of removing the particle holding layer from the upper surface of the substrate by supplying a stripping solution for removing the residual particles and a residue removing step.

  In this method, the solute component which is the solute contained in the particle retention layer is poorly soluble or insoluble in the stripping solution before heating to a temperature above the alteration temperature, and is altered by heating to a temperature above the alteration temperature. It has the property of becoming soluble in the stripping solution. In the film forming step, the particle holding layer is formed on the upper surface of the substrate without degrading the solute component by heating the processing solution supplied to the upper surface of the substrate to a temperature lower than the deterioration temperature. Heating step. In the residue removing step, a residue removing solution having solubility with respect to the solute component before heating is supplied to the upper surface of the substrate after the removing step above the alteration temperature to remove the particle holding layer. The residue remaining on the top surface of the substrate is removed.

According to this method, the treatment liquid is solidified or cured in the film forming step including the heating step. As a result, a particle holding layer which is hardly soluble or insoluble in the peeling liquid but can be peeled by the peeling liquid is formed on the upper surface of the substrate.
The particles are pulled away from the substrate as the treatment liquid solidifies or hardens. The separated particles are held in the particle holding layer. Therefore, in the removal step, by supplying the peeling liquid to the upper surface of the substrate, the particle holding layer formed on the upper surface of the substrate is not dissolved by the peeling liquid, and the particles held in the particle holding layer are the substrate. Can be peeled off from the top surface of the

Further, in the subsequent residue removing step, a residue removing solution having a property of dissolving the solute component forming the particle retaining layer is supplied to the upper surface of the substrate after removing the particle retaining layer. Thereby, the residue of the particle holding layer can be dissolved and removed from the upper surface of the substrate.
Therefore, according to this method, the particles can be removed at a high removal rate by peeling the particle holding layer from the upper surface of the substrate together with the held particles. Furthermore, the residue of the particle holding layer can be prevented from remaining or reattaching on the upper surface of the substrate.

In one embodiment of the present invention, in the heating step, the processing liquid supplied to the upper surface of the substrate is supplied by supplying a heat medium having a boiling point lower than the deterioration temperature to the back surface which is the lower surface of the substrate. It heats to the temperature below the said degradation temperature.
According to this method, the heating step in the film forming step can be performed by a simple heating unit that supplies the heat medium to the back surface of the substrate.

Therefore, for example, it is not necessary to provide an electric heater or the like in the chamber, or to transfer the substrate to another chamber provided with the electric heater or the like to carry out the heating step. That is, the steps of the substrate cleaning method can be simplified.
In one embodiment of the present invention, the processing liquid on the substrate heated in the heating step is less than the boiling point of the solvent.

  According to this method, the solvent can be left in the particle holding layer after heating in the heating step of the film forming step. Therefore, in the subsequent removal step, the particle holding layer can be easily peeled from the upper surface of the substrate by the interaction between the solvent remaining in the particle holding layer and the supplied peeling liquid. That is, by causing the peeling liquid to permeate into the particle holding layer and reaching the interface with the substrate, the particle holding layer can be lifted from the upper surface of the substrate and peeled off.

In order to further improve this effect, the stripping solution preferably has compatibility with the solvent.
According to the present invention, at least a portion of the solvent is supplied from a processing liquid supply process of supplying a processing liquid containing a solute and a solvent having volatility to the upper surface of the substrate, and the processing liquid supplied to the upper surface of the substrate. Forming a particle holding layer on the upper surface of the substrate by solidifying or curing the treatment liquid, and removing a peeling solution for peeling off the particle holding layer on the upper surface of the substrate. A second substrate cleaning method is provided, including a removing step of supplying and removing the particle holding layer from the upper surface of the substrate, and a residue removing step. And the said film-forming process supplies the heat medium to the back surface which is a lower surface of the said board | substrate, and heats the said process liquid supplied to the upper surface of the said substrate to the temperature below the boiling point of the said heat medium. And a heating step of forming the particle holding layer on the upper surface of the substrate. Then, in the residue removing step, a residue removing solution having solubility with respect to a solute component which is the solute contained in the particle retaining layer is supplied to the upper surface of the substrate after the removing step. The residue remaining on the top surface of the substrate after removal is removed.

According to this method, the treatment liquid is solidified or cured in the film forming step including the heating step. Thereby, a particle holding layer which can be peeled off by the peeling liquid is formed on the upper surface of the substrate.
The particles are pulled away from the substrate as the treatment liquid solidifies or hardens. The separated particles are held in the particle holding layer. Therefore, in the removal step, the particle holding layer formed on the upper surface of the substrate is removed by peeling the particles held in the particle holding layer from the upper surface of the substrate by supplying the peeling liquid to the upper surface of the substrate. can do.

Further, in the subsequent residue removing step, a residue removing solution having a property of dissolving the solute component forming the particle retaining layer is supplied to the upper surface of the substrate after removing the particle retaining layer. Thereby, the residue of the particle holding layer can be dissolved and removed from the upper surface of the substrate.
Therefore, according to this method, the particles can be removed at a high removal rate by peeling the particle holding layer from the upper surface of the substrate together with the held particles. Furthermore, the residue of the particle holding layer can be prevented from remaining or reattaching on the upper surface of the substrate.

Moreover, according to this method, the heating step in the film forming step can be performed by a simple heating unit that supplies the heat medium to the back surface of the substrate.
Therefore, for example, it is not necessary to provide an electric heater or the like in the chamber, or to transfer the substrate to another chamber provided with the electric heater or the like to carry out the heating step. That is, the steps of the substrate cleaning method can be simplified.

In one embodiment of the present invention, the processing liquid on the substrate heated in the heating step is less than the boiling point of the solvent.
According to this method, the solvent can be left in the particle holding layer after heating in the heating step of the film forming step. Therefore, in the subsequent removal step, the particle holding layer can be easily peeled from the upper surface of the substrate by the interaction between the solvent remaining in the particle holding layer and the supplied peeling liquid. That is, by causing the peeling liquid to permeate into the particle holding layer and causing the peeling liquid to reach the interface between the particle holding layer and the substrate, the particle holding layer floats from the upper surface of the substrate and is peeled.

In order to further improve this effect, the stripping solution preferably has compatibility with the solvent.
According to the present invention, at least a portion of the solvent is supplied from a processing liquid supply process of supplying a processing liquid containing a solute and a solvent having volatility to the upper surface of the substrate, and the processing liquid supplied to the upper surface of the substrate. Forming a particle holding layer on the upper surface of the substrate by solidifying or curing the treatment liquid, and removing a peeling solution for peeling off the particle holding layer on the upper surface of the substrate. A third substrate cleaning method is provided, including a removing step of supplying and removing the particle holding layer from the upper surface of the substrate, and a residue removing step. And the said film-forming process includes the heating process of forming the said particle holding layer on the upper surface of the said board | substrate by heating the said process liquid supplied to the upper surface of the said board | substrate to the temperature below the boiling point of the said solvent. Then, in the residue removing step, a residue removing solution having solubility with respect to a solute component which is the solute contained in the particle retaining layer is supplied to the upper surface of the substrate after the removing step. The residue remaining on the top surface of the substrate after removal is removed.

According to this method, the treatment liquid is solidified or cured in the film forming step including the heating step. Thereby, a particle holding layer which can be peeled off by the peeling liquid is formed on the upper surface of the substrate.
The particles are pulled away from the substrate as the treatment liquid solidifies or hardens. The separated particles are held in the particle holding layer. Therefore, in the removal step, the particle holding layer formed on the upper surface of the substrate is removed by peeling the particles held in the particle holding layer from the upper surface of the substrate by supplying the peeling liquid to the upper surface of the substrate. can do.

Further, in the subsequent residue removing step, a residue removing solution having a property of dissolving the solute component forming the particle retaining layer is supplied to the upper surface of the substrate after removing the particle retaining layer. Thereby, the residue of the particle holding layer can be dissolved and removed from the upper surface of the substrate.
Therefore, according to this method, the particles can be removed at a high removal rate by peeling the particle holding layer from the upper surface of the substrate together with the held particles. Furthermore, the residue of the particle holding layer can be prevented from remaining or reattaching on the upper surface of the substrate.

  Moreover, according to this method, the solvent can be left in the particle holding layer after heating in the heating step of the film forming step. Therefore, in the subsequent removal step, the particle holding layer can be easily peeled from the upper surface of the substrate by the interaction between the solvent remaining in the particle holding layer and the supplied peeling liquid. That is, by causing the peeling liquid to permeate into the particle holding layer and reaching the interface with the substrate, the particle holding layer can be lifted from the upper surface of the substrate and peeled off.

In order to further improve this effect, the stripping solution preferably has compatibility with the solvent.
The present invention also includes a treatment liquid supply unit for supplying a treatment liquid containing a solute and a solvent having volatility to the upper surface of the substrate, and heating the substrate to volatilize at least a part of the solvent. Heating or curing the treatment liquid to form the particle holding layer on the upper surface of the substrate, and peeling for supplying the peeling liquid for peeling the particle holding layer on the upper surface of the substrate A liquid supply unit, a residue removing liquid supply unit for supplying a residue removing liquid for removing a residue remaining on the upper surface of the substrate after removing the particle holding layer on the upper surface of the substrate; A first substrate cleaning apparatus including a liquid supply unit, the heating unit, the stripping liquid supply unit, and a control device for controlling the residue removing liquid supply unit; Subjected to. The solute component which is the solute contained in the particle retention layer is poorly soluble or insoluble in the stripping solution before heating to a temperature above the alteration temperature, and is altered by heating to a temperature above the alteration temperature, It has the property of being soluble in the stripping solution. The said residue removal liquid has the solubility with respect to the said solute component before a heating above the said deterioration temperature. The control device volatilizes at least a portion of the solvent from the treatment liquid supplied from the treatment liquid supplied to the upper surface of the substrate and supplies the treatment liquid to the upper surface of the substrate. A film forming step of forming the particle holding layer on the upper surface of the substrate without deteriorating the solute component by heating to a temperature lower than the deterioration temperature, and supplying the stripping solution to the upper surface of the substrate Removing the particle holding layer from the upper surface of the substrate and removing the particle holding layer from the upper surface of the substrate; supplying the residue-removing solution to the upper surface of the substrate to remove the particle holding layer; And performing a residue removing step to remove the remaining residue.

According to this configuration, the treatment liquid is solidified or cured in the film forming process including the heating process. As a result, on the upper surface of the substrate, a particle holding layer which is hardly soluble or insoluble in the peeling liquid but can be peeled by the peeling liquid is formed.
The particles are pulled away from the substrate as the treatment liquid solidifies or hardens. The separated particles are held in the particle holding layer. Therefore, in the removal step, by supplying the peeling liquid to the upper surface of the substrate, the particle holding layer formed on the upper surface of the substrate is not dissolved by the peeling liquid, and the particles held in the particle holding layer are the substrate. Can be peeled off from the top surface of the

Further, in the subsequent residue removing step, a residue removing solution having a property of dissolving the solute component forming the particle retaining layer is supplied to the upper surface of the substrate after removing the particle retaining layer. Thereby, the residue of the particle holding layer can be dissolved and removed from the upper surface of the substrate.
Therefore, according to this configuration, it is possible to remove the particles at a high removal rate by separating the particle holding layer from the upper surface of the substrate for every held particle. Furthermore, the residue of the particle holding layer can be prevented from remaining or reattaching on the upper surface of the substrate.

In one embodiment of the present invention, the heating unit includes a heat medium supply unit for supplying a heat medium having a boiling point less than the deterioration temperature to the back surface of the substrate.
According to this configuration, it is possible to execute the heating process in the film forming process by the simple heating means (heat medium supply unit) for supplying the heat medium to the back surface of the substrate.
Therefore, for example, it is not necessary to provide an electric heater or the like in the chamber, or to transfer the substrate to another chamber provided with the electric heater or the like to carry out the heating step. That is, the configuration of the substrate cleaning apparatus can be simplified.

  The present invention further includes a processing liquid supply unit for supplying a processing liquid containing a solute and a solvent having volatility to the upper surface of the substrate, and a heat medium supply unit for supplying a heat medium to the back surface of the substrate. The substrate is heated by the heat medium supplied from the heat medium supply unit to volatize at least a part of the solvent, thereby solidifying or curing the treatment liquid, and the particle holding layer is formed on the upper surface of the substrate. The particle holding layer is peeled off and removed on the heating unit for forming, the peeling liquid supply unit for supplying the peeling liquid for peeling the particle holding layer on the upper surface of the substrate, and the upper surface of the substrate A residue removing liquid supply unit for supplying a residue removing liquid for removing a residue remaining on the upper surface of the substrate after the processing solution supplying unit; DOO, the stripping solution supply unit, and a controller for controlling said residue removing solution supply unit, providing a second substrate cleaning apparatus. The residue removing liquid has solubility in a solute component which is the solute contained in the particle holding layer. The control device volatilizes at least a portion of the solvent from the treatment liquid supplied from the treatment liquid supplied to the upper surface of the substrate and supplies the treatment liquid to the upper surface of the substrate. A film forming step of forming the particle holding layer on the upper surface of the substrate by heating to a temperature less than the boiling point of the heat medium, and supplying the release liquid to the upper surface of the substrate Removing the particle holding layer and removing the residue; and removing the residue remaining on the upper surface of the substrate after removing the particle holding layer by supplying the residue removing liquid to the upper surface of the substrate And the process.

According to this configuration, in the film forming process including the heating process, the treatment liquid is solidified or hardened, and the particle holding layer which can be peeled off by the peeling liquid is formed on the upper surface of the substrate.
The particles are pulled away from the substrate as the treatment liquid solidifies or hardens. The separated particles are held in the particle holding layer. Therefore, in the removal step, the particle holding layer formed on the upper surface of the substrate is removed by peeling the particles held in the particle holding layer from the upper surface of the substrate by supplying the peeling liquid to the upper surface of the substrate. can do.

Further, in the subsequent residue removing step, a residue removing solution having a property of dissolving the solute component forming the particle retaining layer is supplied to the upper surface of the substrate after removing the particle retaining layer. Thereby, the residue of the particle holding layer can be dissolved and removed from the upper surface of the substrate.
Therefore, according to this configuration, it is possible to remove the particles at a high removal rate by separating the particle holding layer from the upper surface of the substrate for every held particle. Furthermore, the residue of the particle holding layer can be prevented from remaining or reattaching on the upper surface of the substrate.

Moreover, according to this configuration, the heating process in the film forming process can be performed by a simple heating unit (heat medium supply unit) that supplies the heat medium to the back surface of the substrate.
Therefore, for example, it is not necessary to provide an electric heater or the like in the chamber, or to transfer the substrate to another chamber provided with the electric heater or the like to carry out the heating step. That is, the configuration of the substrate cleaning apparatus can be simplified.

  The present invention further includes a treatment liquid supply unit for supplying a treatment liquid containing a solute and a solvent having volatility to the upper surface of the substrate, and heating the substrate to volatilize at least a part of the solvent. Heating or curing the treatment liquid to form the particle holding layer on the upper surface of the substrate, and peeling for supplying the peeling liquid for peeling the particle holding layer on the upper surface of the substrate A liquid supply unit, a residue removing liquid supply unit for supplying a residue removing liquid for removing a residue remaining on the upper surface of the substrate after removing the particle holding layer on the upper surface of the substrate; A third substrate cleaning apparatus, comprising: a liquid supply unit, the heating unit, the stripping liquid supply unit, and a control device for controlling the residue removing liquid supply unit To provide. The residue removing liquid has solubility in a solute component which is the solute contained in the particle holding layer. The control device volatilizes at least a portion of the solvent from the treatment liquid supplied from the treatment liquid supplied to the upper surface of the substrate and supplies the treatment liquid to the upper surface of the substrate. A film forming step of forming the particle holding layer on the upper surface of the substrate by heating to a temperature lower than the boiling point of the solvent, and supplying the release liquid to the upper surface of the substrate to form the upper surface of the substrate Removing the particle holding layer and removing the residue; and removing the residue remaining on the top surface of the substrate after removing the particle holding layer by supplying the residue removing liquid to the top surface of the substrate And do.

According to this configuration, the treatment liquid is solidified or cured in the film forming process including the heating process. Thereby, a particle holding layer which can be peeled off by the peeling liquid is formed on the upper surface of the substrate.
The particles are pulled away from the substrate as the treatment liquid solidifies or hardens. The separated particles are held in the particle holding layer. Therefore, in the removal step, the particle holding layer formed on the upper surface of the substrate is removed by peeling the particles held in the particle holding layer from the upper surface of the substrate by supplying the peeling liquid to the upper surface of the substrate. can do.

Further, in the subsequent residue removing step, a residue removing solution having a property of dissolving the solute component forming the particle retaining layer is supplied to the upper surface of the substrate after removing the particle retaining layer. Thereby, the residue of the particle holding layer can be dissolved and removed from the upper surface of the substrate.
Therefore, according to this configuration, it is possible to remove the particles at a high removal rate by separating the particle holding layer from the upper surface of the substrate for every held particle. Furthermore, the residue of the particle holding layer can be prevented from remaining or reattaching on the upper surface of the substrate.

  Moreover, according to this configuration, the solvent can be left in the particle holding layer after heating in the heating step of the film forming step. Therefore, in the subsequent removal step, the particle holding layer can be easily peeled from the upper surface of the substrate by the interaction between the solvent remaining in the particle holding layer and the supplied peeling liquid. That is, by causing the peeling liquid to permeate into the particle holding layer and reaching the interface with the substrate, the particle holding layer can be lifted from the upper surface of the substrate and peeled off.

FIG. 1 is a schematic plan view showing the layout of a substrate cleaning apparatus according to a first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view showing a schematic configuration of a processing unit provided in the substrate cleaning apparatus. FIG. 3 is a block diagram showing the electrical configuration of the main part of the substrate cleaning apparatus. FIG. 4 is a flowchart for explaining an example of substrate cleaning by the processing unit. FIG. 5A is a schematic cross-sectional view for explaining the state of the substrate cleaning. FIG. 5B is a schematic cross-sectional view for explaining the state of the substrate cleaning. FIG. 5C is a schematic cross-sectional view for explaining the state of the substrate cleaning. FIG. 5D is a schematic cross-sectional view for explaining the state of the substrate cleaning. FIG. 5E is a schematic cross-sectional view for explaining the state of the substrate cleaning. FIG. 5F is a schematic cross-sectional view for explaining the state of the substrate cleaning. FIG. 5G is a schematic cross-sectional view for explaining the state of the substrate cleaning. FIG. 5H is a schematic cross-sectional view for explaining the state of the substrate cleaning. FIG. 6A is a schematic cross-sectional view for explaining the appearance of the particle holding layer in the substrate cleaning. FIG. 6B is a schematic cross-sectional view for explaining the appearance of the particle holding layer in the substrate cleaning. FIG. 7 is a graph showing the results of measuring the number of residues. FIG. 8 is a graph showing the result of measuring the particle removal rate (PRE). FIG. 9 is a schematic cross-sectional view showing a schematic configuration of a processing unit according to a second embodiment of the present invention. FIG. 10 is a block diagram showing the electrical configuration of the processing unit according to the second embodiment. FIG. 11A is a schematic cross-sectional view for explaining the state of substrate cleaning by the processing unit according to the second embodiment. FIG. 11B is a schematic cross-sectional view for explaining the state of substrate cleaning by the processing unit according to the second embodiment. FIG. 11C is a schematic cross-sectional view for explaining the state of substrate cleaning by the processing unit according to the second embodiment. FIG. 11D is a schematic cross-sectional view for explaining the state of substrate cleaning by the processing unit according to the second embodiment. FIG. 11E is a schematic cross-sectional view for illustrating the state of substrate cleaning by the processing unit according to the second embodiment. FIG. 11F is a schematic cross-sectional view for explaining the state of substrate cleaning by the processing unit according to the second embodiment. FIG. 11G is a schematic cross-sectional view for explaining the state of substrate cleaning by the processing unit according to the second embodiment. FIG. 11H is a schematic cross-sectional view for explaining the state of substrate cleaning by the processing unit according to the second embodiment. FIG. 12A is a schematic cross-sectional view for explaining another example of substrate cleaning by the processing unit according to the second embodiment. FIG. 12B is a schematic cross-sectional view for explaining another example of substrate cleaning by the processing unit according to the second embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
First Embodiment
FIG. 1 is a schematic plan view showing the layout of a substrate cleaning apparatus 1 according to a first embodiment of the present invention.
The substrate cleaning apparatus 1 is a single wafer type apparatus for cleaning a substrate W such as a silicon wafer one by one. In this embodiment, the substrate W is a disk-shaped substrate.

The substrate cleaning apparatus 1 processes a plurality of processing units 2 for cleaning a substrate W, a load port LP on which a carrier C accommodating a plurality of substrates W to be cleaned by the processing unit 2 is placed, a load port LP, and the like. The transport robots IR and CR for transporting the substrate W to and from the unit 2 and the control device 3 for controlling the substrate cleaning apparatus 1 are included.
The transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR. The transport robot CR transports the substrate W between the transport robot IR and the processing unit 2. The plurality of processing units 2 have, for example, the same configuration.

FIG. 2 is a schematic cross-sectional view showing a schematic configuration of the processing unit 2 provided in the substrate cleaning apparatus 1.
The processing unit 2 holds a single substrate W in a horizontal posture, and holds the spin chuck 4 for rotating the substrate W around a vertical rotation axis A1 passing through the center of the substrate W; A processing liquid supply nozzle 5 for supplying a processing liquid containing a solute and a solvent having volatility to the upper surface of the substrate W, and a peeling liquid supply nozzle 6 for supplying a peeling liquid to the upper surface of the substrate W held by the spin chuck 4 And. The treatment liquid supply nozzle 5 is an example of a treatment liquid supply unit.
The peeling liquid supply nozzle 6 is an example of a peeling liquid supply unit.

The spin chuck 4 includes a chuck pin 8, a spin base 9, a rotating shaft 10, and a spin motor 11 for rotating the substrate W around a rotation axis A 1.
The rotation axis 10 extends vertically along the rotation axis A1, and in this embodiment is a hollow axis. The upper end of the rotating shaft 10 is coupled to the center of the lower surface of the spin base 9. The spin base 9 has a disk shape along the horizontal direction. A plurality of chuck pins 8 for gripping the substrate W are arranged at intervals in the circumferential direction on the peripheral edge portion of the top surface of the spin base 9. The spin motor 11 includes, for example, an electric motor that integrally rotates the substrate W, the chuck pin 8, the spin base 9 and the rotation shaft 10 around the rotation axis A1 by applying a rotational force to the rotation shaft 10.

  The processing liquid supply nozzle 5 is moved, for example, in the horizontal direction (direction perpendicular to the rotation axis A1) by the first nozzle moving mechanism 12. The treatment liquid supply nozzle 5 can be moved between the central position and the retracted position by movement in the horizontal direction. The processing liquid supply nozzle 5 faces the rotation center position of the upper surface of the substrate W when located at the center position. The processing liquid supply nozzle 5 does not face the upper surface of the substrate W when positioned at the retracted position. The rotation center position of the upper surface of the substrate W is a position at which the upper surface of the substrate W intersects with the rotation axis A1. The retracted position not facing the upper surface of the substrate W is the position outside the spin base 9 in plan view. A treatment liquid supply pipe 13 is connected to the treatment liquid supply nozzle 5. The processing liquid supply pipe 13 is provided with a valve 14 for opening and closing the flow path.

  The peeling liquid supply nozzle 6 is moved, for example, in the horizontal direction (the direction perpendicular to the rotation axis A1) by the second nozzle moving mechanism 15. The peeling liquid supply nozzle 6 can be moved between the central position and the retracted position by the movement in the horizontal direction. The peeling liquid supply nozzle 6 faces the rotation center position of the upper surface of the substrate W when it is located at the center position. The peeling liquid supply nozzle 6 does not face the upper surface of the substrate W when it is located at the retracted position. The peeling liquid supply nozzle 6 is connected to a supply pipe 16 of DIW as a first peeling liquid. The supply pipe 16 is provided with valves 17 and 18 for opening and closing the flow path.

Further, to the stripping solution supply nozzle 6, there is further connected a supply pipe 19 of an SC1 solution as a second stripping solution, that is, an aqueous solution of ammonia and hydrogen peroxide. The supply pipe 19 is connected to the supply pipe 16 downstream of the valve 17 and upstream of the valve 18. The supply pipe 19 is provided with a valve 20 for opening and closing the flow path.
The processing unit 2 receives a liquid to be discharged from the upper and lower surfaces of the substrate W held by the spin chuck 4 to the outside of the substrate W, and an opposing member facing the substrate W held by the spin chuck 4 from above And 50.

  The processing cup 40 includes a plurality of guards 41 that receive the liquid splashing outward from the substrate W held by the spin chuck 4, a plurality of cups 42 that receive the liquid guided downward by the plurality of guards 41, and a plurality of cups 42. It includes a cylindrical outer wall member 43 surrounding the guard 41 and the plurality of cups 42. In this embodiment, an example in which two guards 41 (a first guard 41A and a second guard 41B) and two cups 42 (a first cup 42A and a second cup 42B) are provided is shown.

  Each of the first cup 42A and the second cup 42B has a groove-like form opened upward. The first guard 41A surrounds the spin base 9. The second guard 41B surrounds the spin base 9 radially outward of the first guard 41A. The first cup 42A receives the liquid guided downward by the first guard 41A. The second cup 42B is integrally formed with the first guard 41A, and receives the liquid guided downward by the second guard 41B.

  The processing unit 2 includes a guard elevating mechanism 44 that raises and lowers the first guard 71A and the second guard 71B separately. The guard lifting mechanism 44 lifts and lowers the first guard 71A between the lower position and the upper position. The guard elevating mechanism 44 raises and lowers the second guard 71B between the lower position and the upper position. The first guard 71A is located on the side of the substrate W in the entire movable range between the upper position and the lower position. The second guard 71B is located to the side of the substrate W in the entire movable range between the upper position and the lower position. The movable range includes the upper position and the lower position.

When both the first guard 71A and the second guard 71B are at the upper position, the liquid splashing from the substrate W is received by the first guard 71A. When the first guard 71A is at the lower position and the second guard 71B is at the upper position, the liquid splashing from the substrate W is received by the second guard 71B.
The guard lifting mechanism 44 includes, for example, a first ball screw mechanism (not shown) attached to the first guard 71A, a first motor (not shown) for giving a driving force to the first ball screw, and a second guard 71 B includes a second ball screw mechanism (not shown) attached and a second motor (not shown) that applies a driving force to the second ball screw mechanism.

The opposing member 50 is formed in a disk shape having a diameter substantially equal to or larger than the diameter of the substrate W, and is disposed substantially horizontally above the spin chuck 4. The facing member 50 has a facing surface 50 a facing the top surface of the substrate W.
The hollow shaft 51 is fixed to the surface of the opposing member 50 opposite to the opposing surface 50 a. A communication hole which penetrates the opposing member 50 vertically and communicates with the internal space of the hollow shaft 51 is formed in a portion including the position overlapping with the rotation axis A1 in plan view in the opposing member 50.

The opposing member 50 shields the atmosphere in the space between the opposing surface 50 a of the opposing member 50 and the upper surface of the substrate W from the atmosphere outside the space. Therefore, the opposing member 50 is also referred to as a blocking plate.
The processing unit 2 further includes an opposing member raising and lowering mechanism 52 that drives the raising and lowering of the opposing member 50. The opposing member lifting mechanism 52 can position the opposing member 50 at an arbitrary position (height) from the lower position (the position shown in FIG. 5H described later) to the upper position (the position shown in FIG. 5A described later). The lower position is a position where the facing surface 50 a of the facing member 50 is closest to the substrate W in the movable range of the facing member 50. The upper position is a position (retracted position) at which the facing surface 50 a of the facing member 50 is most separated from the substrate W in the movable range of the facing member 50. When the facing member 50 is located at the upper position, the processing liquid supply nozzle 5 and the peeling liquid supply nozzle 6 can enter between the facing surface 50 a of the facing member 50 and the top surface of the substrate W.

The opposing member lifting mechanism 52 includes, for example, a ball screw mechanism (not shown) attached to a support member (not shown) for supporting the hollow shaft 51, and an electric motor (not shown) for applying a driving force thereto. Including.
The processing unit 2 supplies a residue removing liquid supply nozzle 7 for supplying a residue removing liquid to the upper surface of the substrate W held by the spin chuck 4, and the upper surface of the substrate W held by the spin chuck 4 and the opposing surface of the opposing member 50. It further includes a gas supply nozzle 60 for supplying a gas to the space between 50 a and a rinse liquid supply nozzle 65 for supplying a rinse liquid to the upper surface of the substrate W held by the spin chuck 4. The residue removing liquid supply nozzle 7 is an example of a residue removing liquid supply unit. The gas supply nozzle 60 is an example of a gas supply unit. The rinse liquid supply nozzle 65 is an example of a rinse liquid supply unit.

  A residue removing liquid supply pipe 22 is connected to the residue removing liquid supply nozzle 7. The residue removing liquid supply pipe 22 is provided with a valve 23 for opening and closing the flow path. A gas supply pipe 61 is connected to the gas supply nozzle 60. The gas supply pipe 61 is provided with a valve 62 for opening and closing the flow path. A rinse liquid supply pipe 66 is connected to the rinse liquid supply nozzle 65. The rinse liquid supply pipe 66 is provided with a valve 67 for opening and closing the flow path.

  The residue removing liquid supply nozzle 7, the gas supply nozzle 60 and the rinse liquid supply nozzle 65 are commonly accommodated in the nozzle accommodation member 53 inserted into the hollow shaft 51. The discharge ports of the residue removing liquid supply nozzle 7, the gas supply nozzle 60, and the rinse liquid supply nozzle 65 are exposed from the lower end portion of the nozzle accommodation member 53. The lower end portion of the nozzle housing member 53 faces the central region of the upper surface of the substrate W held by the spin chuck 4.

  The processing unit 2 further includes a heat medium supply nozzle 24 for supplying a heat medium for heating the substrate W to the back surface (lower surface) of the substrate W held by the spin chuck 4. The heat medium supply nozzle 24 heats the substrate W held by the chuck pins 8 and the spin base 9 from the back surface side of the substrate W to form a particle holding layer on the upper surface of the substrate W. It is.

The heat medium supply nozzle 24 heats the processing liquid on the upper surface of the substrate W by supplying the heat medium to substantially the entire surface of the back surface of the substrate W. The heat medium supply nozzle 24 has the discharge port 24 a at the upper end facing the center of the back surface of the substrate W, through which the rotary shaft 10 is inserted. An example of the heat medium is warm pure water.
In this embodiment, the heat medium supply nozzle 24 supplies the heat medium toward the central position on the back surface of the substrate W from the discharge port 24 a while rotating the substrate W. The supplied heat medium spreads over substantially the entire back surface of the substrate W by the action of the centrifugal force. Thereby, the processing liquid on the substrate W and the upper surface of the substrate W is heated. The rotation center position on the back surface of the substrate W is the intersection position of the back surface of the substrate W with the rotation axis A1. A heat medium supply pipe 25 is connected to the heat medium supply nozzle 24. The heat medium supply pipe 25 is provided with a valve 26 for opening and closing the flow path.

FIG. 3 is a block diagram showing the electrical configuration of the main part of the substrate cleaning apparatus 1.
The substrate cleaning apparatus 1 includes a control device 3. The control device 3 includes a microcomputer and controls a control target provided in the substrate cleaning apparatus 1 according to a predetermined control program. Specifically, control device 3 includes processor (CPU) 3A and memory 3B in which a control program is stored, and processor 3A executes various control processes for substrate processing by executing the control program. It is configured to

In particular, the control device 3 includes the spin motor 11, the first nozzle moving mechanism 12, the second nozzle moving mechanism 15, the opposing member lifting mechanism 52, the guard lifting mechanism 44, the valves 14, 17, 18, 20, 23, 26. , 62, 67 are programmed to control.
FIG. 4 is a flowchart for explaining an example of substrate cleaning by the processing unit 2. 5A to 5H are schematic cross-sectional views for explaining an example of substrate cleaning. 6A and 6B are schematic cross-sectional views for explaining the appearance of the particle holding layer 29 in an example of substrate cleaning.

  In substrate cleaning by the processing unit 2, first, a processing liquid supply process is performed (step S1). In the processing liquid supply step, first, the control device 3 drives the spin motor 11, rotates the spin base 9, and starts rotation of the substrate W. In the processing liquid supply process, the spin base 9 is rotated at a predetermined processing liquid supply speed which is a substrate rotation speed. The processing liquid supply rate is, for example, 10 rpm to several tens of rpm. Then, the control device 3 controls the opposing member lifting mechanism 52 to place the opposing member 50 at the upper position. Then, the control device 3 controls the guard lifting mechanism 44 to arrange the first guard 41A and the second guard 41B in the upper position.

  Next, the control device 3 controls the first nozzle moving mechanism 12 to dispose the processing liquid supply nozzle 5 at the central position above the substrate W. Then, the control device 3 opens the valve 14. As a result, as shown in FIG. 5A, the processing liquid 27 is supplied from the processing liquid supply nozzle 5 toward the upper surface of the substrate W in a rotating state. The processing solution 27 supplied to the upper surface of the substrate W is spread over substantially the entire upper surface of the substrate W by the action of the centrifugal force.

After supplying the processing liquid for a predetermined time, a film forming step of solidifying or curing the processing liquid to form a particle holding layer on the upper surface of the substrate W is performed (step S2). In the film forming step, first, the control device 3 closes the valve 14 to stop the supply of the processing liquid 27 from the processing liquid supply nozzle 5. Then, the control device 3 moves the processing liquid supply nozzle 5 to the retracted position.
Next, the control device 3 controls the spin motor 11 to rotate the spin base 9 at a predetermined spin-off speed which is the substrate rotation speed (spin-off process, step S2a). The spin-off speed is, for example, 300 rpm to 1500 rpm. Thereby, as shown in FIG. 5B, first, the processing liquid 27 supplied to the upper surface of the substrate W is discharged from the peripheral edge of the upper surface of the substrate W, and then the volatilization of the volatile solvent proceeds.

Next, in the control device 3, the opposing member lifting mechanism 52 moves the opposing member 50 from the upper position toward the lower position. The controller 3 opens the valve 62. Thus, a gas such as nitrogen (N ₂ ) gas is supplied from the gas supply nozzle 60 to the space between the facing surface 50 a of the facing member 50 and the upper surface of the substrate W. Then, the control device 3 controls the spin motor 11 to rotate the spin base 9 at a predetermined heating speed which is a substrate rotation speed. The heating speed is, for example, 100 rpm to 1,500 rpm. After the opposing member 50 reaches the lower position, the controller 3 opens the valve 26. As a result, as shown in FIG. 5C, the heat medium 28 is supplied from the heat medium supply nozzle 24 toward the back surface of the substrate W in the rotating state. The supplied heat medium 28 spreads over substantially the entire back surface of the substrate W by the action of the centrifugal force. Thus, the processing liquid 27 on the substrate W and the upper surface of the substrate W is heated (heating step, step S2b).

  Then, the volatilization of the volatile solvent proceeds further, and the treatment liquid 27 solidifies or hardens. As a result, a solid film made of a solute component, that is, the particle holding layer 29 is formed. Further, as shown in FIG. 6A, when the particle holding layer 29 is formed, the particles 30 attached to the upper surface of the substrate W are separated from the substrate W and held in the particle holding layer 29. .

  Here, "solidification" refers to, for example, the solidification of a solute due to the force acting between molecules or atoms as the solvent is volatilized. "Hardening" refers to hardening of a solute, for example, by chemical changes such as polymerization or crosslinking. Therefore, "solidification or hardening" indicates that the solute is "solidified" by various factors. The treatment liquid may be solidified or cured to such an extent that the particles 30 can be held, and the solvent does not have to be completely evaporated. Further, the “solute component” forming the particle holding layer 29 may be a solute itself contained in the treatment liquid 27 or one derived from a solute, for example, one obtained as a result of a chemical change. It may be.

The particle holding layer 29 is formed as a solute which is soluble in any solvent and keeps the particles 30 attached to the upper surface of the substrate W apart from the substrate W during solidification or curing. Various resins that can be used can be used.
For example, in this embodiment, as a solute, a resin that is poorly soluble or insoluble in water before heating to a predetermined alteration temperature or higher, and has a property of being altered to be water soluble by heating to a temperature above the alteration temperature Hereinafter, "thermosensitive water-soluble resin" may be described. A cleaning method according to an embodiment of the present invention is implemented by combining a heat-sensitive water-soluble resin with a water-based peeling solution described later.

As a specific example of the heat-sensitive water-soluble resin, for example, a resin which is decomposed by heating to a predetermined deterioration temperature or higher (for example, 200 ° C. or higher) to expose a polar functional group to express water solubility Etc. can be used.
In this embodiment, in the film forming step, the processing liquid is heated to a temperature lower than the deterioration temperature of the heat-sensitive water-soluble resin, whereby the heat-sensitive water-soluble resin is not deteriorated to water solubility. A particle holding layer 29 which is hardly soluble or insoluble in the aqueous release solution is formed.

In order to heat the treatment liquid to a temperature lower than the deterioration temperature of the heat-sensitive water-soluble resin, a heat medium having a boiling point lower than the deterioration temperature may be used as the heat medium. For example, in the case of a heat-sensitive water-soluble resin having a deterioration temperature of 180 ° C., DIW (boiling point: 100 ° C.) can be used as a heat medium, for example.
The heating temperature is more preferably less than the boiling point of the solvent. By heating the treatment liquid to a temperature lower than the boiling point of the solvent, the solvent can be left in the particle holding layer 29 as described above. Then, the particle holding layer 29 can be easily peeled from the upper surface of the substrate W by the interaction between the solvent remaining in the particle holding layer 29 and the peeling liquid.

  As described above, the heat-sensitive water-soluble resin is denatured to water solubility when heated to a temperature higher than the denatured temperature. Therefore, it can be used, for example, in the conventional methods described in Patent Documents 1 and 2. However, in the embodiment, the particle holding layer 29 is formed in a state in which the heat-sensitive water-soluble resin is intentionally stopped heating to less than the deterioration temperature to maintain the poor solubility or insolubility in the aqueous release solution. Therefore, the particle holding layer 29 maintaining the aggregated state can be removed from the substrate W without dropping the particles 30 from the particle holding layer 29. Therefore, the particles 30 can be removed at a high removal rate.

  Moreover, in this embodiment, the temperature of heating can be set to a temperature lower than the deterioration temperature which is lower than that of the conventional method. Therefore, the energy consumption when carrying out the cleaning method can also be reduced. Specifically, since the heating temperature of the particle holding layer 29 may be less than 100 ° C., DIW can be used as a heating unit for heating the substrate W. On the other hand, unlike the present embodiment, in the configuration in which the particle holding layer 29 is heated to 100 ° C. or higher, a liquid which does not vaporize even at high temperature (for example, a liquid whose boiling point is higher than 100 ° C.) must be used as the heating means. Therefore, by setting the heating temperature to be lower than the deterioration temperature, it is possible to realize heating the substrate W with a safe and simple configuration.

As the solvent, a solvent having solubility in a heat-sensitive water-soluble resin before deterioration and having volatility can be used. Here, "having volatility" means having high volatility compared to water. As the solvent, for example, PGEE can be used.
In the heating (heating step) of the substrate W by the heat medium 28 as described above, the opposing surface 50a of the opposing member 50 is brought close to the upper surface of the substrate W (for example, the opposing member 50 is positioned at the lower position). State)).

The heat medium 28 supplied to the back surface of the substrate W spreads out substantially to the entire surface of the back surface of the substrate W, and then splashes out of the substrate W by the centrifugal force. The heat medium 28 scattered to the outside of the substrate W is received by the first guard 41A. A portion of the heat medium 28 received by the first guard 41A bounces off the first guard 41A.
So, in this embodiment, a heating process is performed in the state where the opposing surface 50a of the opposing member 50 was made to adjoin to the upper surface of the board | substrate W. The opposing member 50 protects the upper surface of the substrate W from the heat medium 28 reflected back from the first guard 41A. Accordingly, the adhesion of the heat medium 28 to the surface of the particle holding layer 29 can be suppressed, so that particles resulting from the rebound of the heat medium 28 from the first guard 41A can be suppressed.

  Furthermore, in this embodiment, as described above, the gas is supplied from the gas supply nozzle 60 to the space between the facing surface 50a of the facing member 50 and the upper surface of the substrate W. The gas supplied to the space between the opposing surface 50 a of the opposing member 50 and the upper surface of the substrate W forms an air flow moving from the central region of the upper surface of the substrate W toward the periphery of the upper surface of the substrate W. By forming an air flow moving from the central region of the upper surface of the substrate W toward the peripheral edge of the upper surface of the substrate W, the heat medium 28 rebounded from the first guard 41A can be pushed back toward the first guard 41A. Therefore, adhesion of the heat medium 28 to the surface of the particle holding layer 29 can be further suppressed.

  The gas supplied to the space between the facing surface 50 a of the facing member 50 and the upper surface of the substrate W is not limited to nitrogen gas. The gas supplied to the space between the facing surface 50a of the facing member 50 and the upper surface of the substrate W is preferably an inert gas, and may be an inert gas other than nitrogen gas. The inert gas is a gas inert to the top surface and pattern of the substrate W, and may be, for example, a noble gas such as argon.

After heating for a predetermined time, the controller 3 closes the valve 26 to stop the supply of the heat medium from the heat medium supply nozzle 24. Then, a removing step is performed to remove the particle holding layer 29 from the upper surface of the substrate W (step S3).
That is, the control device 3 controls the spin motor 11 to rotate the spin base 9 at a predetermined removal speed which is the substrate rotation speed. The removal rate is, for example, 500 rpm to 800 rpm.

  The control device 3 controls the opposing member lifting mechanism 52 to place the opposing member 50 at the upper position. Then, the control device 3 closes the valve 60. Thereby, the supply of the gas from the gas supply nozzle 60 is stopped. Then, the control device 3 controls the second nozzle moving mechanism 15 to arrange the peeling liquid supply nozzle 6 at a central position above the substrate W. Then, the control device 3 opens the valves 17 and 18 while keeping the valve 20 closed. Thereby, as shown in FIG. 5D, DIW 31 as the first peeling liquid is supplied from the peeling liquid supply nozzle 6 toward the upper surface of the substrate W in a rotating state (DIW supplying step, step S3a). The DIW 31 supplied to the upper surface of the substrate W spreads over substantially the entire upper surface of the substrate W by the action of the centrifugal force, and is discharged from the peripheral edge of the upper surface of the substrate W.

  Next, while rotating the spin base 9 while maintaining the first removal rate, the control device 3 closes the valve 17 to stop the supply of DIW, and then opens the valve 20. Thereby, as shown in FIG. 5E, the SC1 liquid 32 as an example of the second peeling liquid is supplied from the peeling liquid supply nozzle 6 toward the upper surface of the substrate W in a rotating state (SC1 liquid supplying step, Step S3b). The SC1 solution 32 supplied to the upper surface of the substrate W spreads over substantially the entire upper surface of the substrate W by the action of centrifugal force to replace the DIW 31, and the SC1 solution 32 is discharged from the peripheral edge of the upper surface of the substrate W Ru.

  Both DIW 31 and SC1 solution 32 (hereinafter both may be collectively referred to as “stripping solution”) have compatibility with PGEE as a solvent. Moreover, as described above, the particle holding layer 29 formed by heating the heat-sensitive water-soluble resin to less than the deterioration temperature thereof is hardly soluble or insoluble in DIW 31 or SC1 liquid 32, which is a water-based peeling liquid. Therefore, these peeling liquids penetrate into the particle holding layer 29 without dissolving the solute component forming the particle holding layer 29 due to the interaction with PGEE remaining in the particle holding layer 29. Then, the peeling liquid reaches the interface with the substrate W. As a result, as shown in FIG. 6B, the particle holding layer 29 holding the particles 30 floats from the upper surface of the substrate W and is peeled off.

The particle holding layer 29 peeled off from the upper surface of the substrate W is discharged from the peripheral edge of the upper surface of the substrate W together with the peeling liquid by the action of the centrifugal force due to the rotation of the substrate W. That is, the peeled particle holding layer 29 is removed from the upper surface of the substrate W.
DIW 31 is less effective as a stripping solution than SC1 solution 32. However, DIW 31 is supplied prior to SC1 solution 32 and penetrates into particle holding layer 29 to replace at least a part of PGEE remaining in particle holding layer 29. The DIW 31 functions to assist the penetration of the SC1 solution 32 supplied in the next step into the particle holding layer 29.

Therefore, although it is preferable to supply DIW 31 prior to the supply of SC1 solution 32 as the stripping solution, the step of supplying DIW 31 (step S3a) may be omitted. That is, only the SC1 solution may be used as the stripping solution.
The first stripping solution is not limited to DIW 31, and may be any of carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water with a dilution concentration (for example, about 10 ppm to 100 ppm). The second stripping solution is not limited to the SC1 solution 32, and an aqueous ammonia solution, an aqueous solution of quaternary ammonium hydroxide such as tetramethyl ammonium hydroxide, or an alkaline aqueous solution such as an aqueous choline solution can also be used.

Next, the controller 3 closes the valve 18 and the valve 20 to stop the supply of the SC1 solution, and then moves the stripping solution supply nozzle 6 to the retracted position. The spin motor 11 is controlled to rotate the spin base 9 at a predetermined rinse speed, which is the substrate rotational speed. The rinse speed is, for example, 100 rpm to 1000 rpm.
Next, the control device 3 controls the opposing member lifting mechanism 52 to move the opposing member 50 from the upper position to the supply position between the upper position and the lower position. Then, the control device 3 opens the valve 67. Thereby, as shown in FIG. 5F, DIW 31 is supplied as a rinse liquid from the rinse liquid supply nozzle 65 toward the upper surface of the substrate W in a rotating state (rinse process, step S4).

The supply of the rinse liquid from the rinse liquid supply nozzle 65 is started, for example, after moving to the supply position. The supply of the rinse liquid from the rinse liquid supply nozzle 65 may be started when the opposing member 50 is at the upper position, or is started while moving from the upper position of the opposing member 50 to the supply position. It is also good.
The rinse solution is not limited to DIW 31, and may be any of carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water of a dilution concentration (for example, about 10 ppm to 100 ppm).

  The supplied DIW 31 spreads over substantially the entire top surface of the substrate W by the action of the centrifugal force. Thereafter, it is discharged from the peripheral edge of the upper surface of the substrate W. Thus, the SC1 liquid 32 remaining on the upper surface of the substrate W is washed away from the upper surface of the substrate W. In addition, for example, even if a part of the particle holding layer 29 peeled off from the upper surface of the substrate W in the previous step is removed without being removed, it is washed away from the upper surface of the substrate W by the DIW 31.

However, for example, the conditions of the previous step of supplying DIW 31 (step S3a) and the step of supplying SC1 liquid 32 (step S3b) are adjusted, and the particle holding layer 29 is sufficiently It can also be removed. In that case, the supply step (step S4) of DIW 31 may be omitted.
Next, the control device 3 closes the valve 67 to stop the supply of DIW 31 from the rinse liquid supply nozzle 65.

Then, a residue removing step of removing the residue remaining on the upper surface of the substrate W after removing the particle holding layer 29 is performed (step S5).
That is, the control device 3 controls the spin motor 11 to rotate the spin base 9 at a predetermined residue removal speed which is the substrate rotation speed. The residue removal rate is, for example, several 10 rpm to 300 rpm. The position of the opposing member 50 is maintained at the supply position. Then, the guard lifting mechanism 44 moves the first guard 41A to the lower position, and maintains the second guard 41B at the upper position.

Next, the controller 3 opens the valve 23. As a result, as shown in FIG. 5G, the residue removing liquid 33 is supplied from the residue removing liquid supply nozzle 7 toward the upper surface of the substrate W in the rotating state.
The residue removing solution 33 supplied to the upper surface of the substrate W is spread over substantially the entire upper surface of the substrate W by the action of the centrifugal force to replace the DIW 31. Then, the residue removing liquid 33 supplied to the upper surface of the substrate W dissolves the residue of the particle holding layer 29 remaining on the upper surface of the substrate W, and is then discharged from the peripheral edge of the upper surface of the substrate W.

  As the residue-removing solution 33, a solvent having solubility in a heat-sensitive water-soluble resin before deterioration can be used. For example, isopropyl alcohol (IPA) can be used as the solvent. Since IPA is compatible with water, DIW as a rinse liquid remaining on the top surface of the substrate W at the start of the residue removal step can be replaced smoothly. Furthermore, since IPA is volatile, it is quickly removed from the top surface of the substrate after the residue removal step.

  Next, the control device 3 closes the valve 23 to stop the supply of the residue removing liquid 33 from the residue removing liquid supply nozzle 7. Then, the control device 3 controls the opposing member lifting mechanism 52 to move the opposing member 50 from the supply position to the lower position. Then, the control device 3 opens the valve 60 and starts the supply of the gas from the gas supply nozzle 60. Then, the control device 3 controls the spin motor 11 to rotate the spin base 9 at a predetermined spin dry speed which is a substrate rotation speed (step S6). The spin dry speed is, for example, 500 rpm to 1,500 rpm. The start of the supply of the gas from the gas supply nozzle 60 and the change of the substrate rotational speed are performed simultaneously, for example.

  The centrifugal force acts on the residue removing liquid 33 by the rotation of the substrate W, and as shown in FIG. 5H, the residue removing liquid 33 is discharged from the peripheral edge of the upper surface of the substrate W and volatilized and removed from the upper surface of the substrate W Be done. The spin dry is performed to complete the series of cleaning steps. Thereafter, the controller 3 closes the valve 62 to stop the supply of gas from the gas supply nozzle 60.

  As the solute contained in the treatment liquid, in addition to the heat-sensitive water-soluble resin, for example, acrylic resin, phenol resin, epoxy resin, melamine resin, urea resin, unsaturated polyester resin, alkyd resin, polyurethane, polyimide, polyethylene, polypropylene Polyvinyl chloride, polystyrene, polyvinyl acetate, polytetrafluoroethylene, acrylonitrile butadiene styrene resin, acrylonitrile styrene resin, polyamide, polyacetal, polycarbonate, polyvinyl alcohol, modified polyphenylene ether, polybutylene terephthalate, polyethylene terephthalate, polyphenylene sulfide, polysulfone, Polyether ether ketone, polyamide imide, etc. can also be used.

As the solvent, any solvent capable of dissolving any of the resins to form a treatment liquid can be used. In particular, it is preferable to use a solvent having compatibility with the stripping solution.
In the case of any of the resins, as the peeling solution, water such as DIW or a water-based peeling solution such as an aqueous alkaline solution can be used.
As the residue-removing solution, any solvent having solubility to any resin can be used. As the residue-removing solution, for example, organic solvents such as thinner, toluene, acetic esters, alcohols, and glycols, and acidic solutions such as acetic acid, formic acid and hydroxyacetic acid can be used. In particular, it is preferable to use a solvent having compatibility with an aqueous stripping solution.

FIG. 7 is a graph showing the results of measurement of the number of residues of the particle retention layer remaining on the upper surface of the substrate when the substrate was cleaned by depositing SiO ₂ particles on the Si substrate. Among the steps of substrate cleaning shown in FIG. 4 in order from the left, when the residue removal step is omitted, the number of residues when the residue removal step is performed for 10 seconds, 20 seconds, and 30 seconds is It shows.

From the results shown in FIG. 7, it can be seen that by performing the residue removing step, the residue of the particle holding layer can be largely suppressed from remaining or reattaching on the upper surface of the substrate.
FIG. 8 is a graph showing the result of measurement of the particle removal rate (PRE) when substrate cleaning was performed by depositing SiO ₂ particles on a Si substrate.
In the drawing, the left side shows the PRE regarding particles having a predetermined particle size or more when the respective steps of substrate cleaning shown in FIG. 4 are performed, that is, when the residue is removed. Further, the right side shows a PRE related to particles having a predetermined particle size or more when the residue removing step is omitted among the steps of substrate cleaning.

In any case, a high PRE is obtained. From this result, the particles re-emitted when the residue removal process is performed are very small, and it is difficult for the particles to adhere again to the upper surface of the substrate. Therefore, even if the residue removal process is performed, the PRE may decrease. It is understood that there is not.
Second Embodiment
FIG. 9 is a schematic cross-sectional view showing a schematic configuration of a processing unit 2P according to a second embodiment of the present invention. In FIG. 9, the same members as the members described above are denoted by the same reference numerals, and the description thereof is omitted (the same applies to FIGS. 10 to 12B described later).

Referring to FIG. 9, the main difference between processing unit 2P and processing unit 2 according to the first embodiment (see FIG. 2) is that processing unit 2P according to the second embodiment includes opposing member 50 and residue removing liquid Instead of the supply nozzle 7, the gas supply nozzle 60 and the rinse liquid supply nozzle 65, a moving nozzle 70 is included, and a heater unit 100 is included.
The moving nozzle 70 is a nozzle that can move at least in the horizontal direction. The moving nozzle 70 has a function as a residue removing liquid supply unit that supplies the residue removing liquid to the upper surface of the substrate W, and a function as a gas supplying unit that supplies a gas such as nitrogen gas to the upper surface of the substrate W.

  The movable nozzle 70 is moved, for example, in the horizontal direction (direction perpendicular to the rotation axis A1) by the third nozzle moving mechanism 80. The moving nozzle 70 can be moved between the central position and the retracted position by moving in the horizontal direction. The moving nozzle 70 faces the rotation center position of the upper surface of the substrate W when located at the center position. The moving nozzle 70 does not face the upper surface of the substrate W when it is located at the retracted position. The retracted position not facing the upper surface of the substrate W is the position outside the spin base 9 in plan view.

The moving nozzle 70 is connected to a residue removing liquid supply pipe 71, a first gas supply pipe 72A, a second gas supply pipe 72B and a third gas supply pipe 72C. The residue removing liquid supply pipe 71 is provided with a valve 73 for opening and closing the flow path. In the gas supply pipes 72A, 72B, 72C, valves 74A, 74B, 74C for opening and closing the flow paths are interposed, respectively.
The moving nozzle 70 has a central discharge port 90 which discharges the residue removing liquid supplied from the residue removing liquid supply pipe 71 along the vertical direction. The moving nozzle 70 has a linear flow discharge port 91 that discharges the gas supplied from the first gas supply pipe 72A linearly in the vertical direction. Furthermore, the moving nozzle 70 has a horizontal flow discharge port 92 that discharges the gas supplied from the second gas supply pipe 72B radially around the moving nozzle 70 along the horizontal direction. The moving nozzle 70 also has a slanted flow discharge port 93 that discharges the gas supplied from the third gas supply pipe 72C radially around the moving nozzle 70 along the obliquely downward direction.

  A mass flow controller 75 is interposed in the first gas supply pipe 72A for accurately adjusting the flow rate of the gas flowing in the first gas supply pipe 72A. The mass flow controller 75 has a flow control valve. Further, the second gas supply pipe 72B is provided with a flow rate variable valve 76B for adjusting the flow rate of the gas flowing in the second gas supply pipe 72B. Further, a flow rate variable valve 76C for adjusting the flow rate of the gas flowing in the third gas supply pipe 72C is interposed in the third gas supply pipe 72C. Further, filters 77A, 77B, 77C for removing foreign matter are interposed in the gas supply pipes 72A, 72B, 72C, respectively.

  The plurality of chuck pins 8 of this embodiment can be opened and closed between a closed state in which the substrate W is held in contact with the peripheral end of the substrate W and gripped the substrate W and an open state retracted from the peripheral end of the substrate W. Further, in the open state, the plurality of chuck pins 8 separate from the circumferential end of the substrate W to release the holding, and contact the lower surface of the peripheral portion of the substrate W to support the substrate W from below. The processing unit 2P further includes a chuck pin drive mechanism 108 that opens and closes the plurality of chuck pins 8. The chuck pin drive mechanism 108 includes, for example, a link mechanism 109 incorporated in the spin base 9 and a drive source 110 disposed outside the spin base 9. The drive source 110 includes, for example, a ball screw mechanism and an electric motor that applies a driving force thereto.

The heater unit 100 has the form of a disk-shaped hot plate. The heater unit 100 has an opposing surface 100 a facing the lower surface of the substrate W from below.
The heater unit 100 includes a plate body 101, a plurality of support pins 102, and a heater 103. The plate body 101 is slightly smaller than the substrate W in plan view. The plurality of support pins 102 project from the upper surface of the plate body 101. An opposing surface 100 a is configured by the upper surface of the plate main body 101 and the surfaces of the plurality of support pins 102. The heater 103 may be a resistor incorporated in the plate body 101. By energizing the heater 103, the facing surface 100a is heated. Then, electric power is supplied to the heater 103 from the heater energization mechanism 105 via the feeder line 104.

The heater unit 100 is disposed above the spin base 9. The processing unit 2 includes a heater elevating mechanism 106 that raises and lowers the heater unit 100 relative to the spin base 9. The heater elevating mechanism 106 includes, for example, a ball screw mechanism and an electric motor that applies a driving force thereto.
An elevation shaft 107 extending in the vertical direction along the rotation axis A1 is coupled to the lower surface of the heater unit 100. The elevating shaft 107 passes through a through hole 9 a formed in the central portion of the spin base 9 and the hollow rotary shaft 10. A feeder line 104 is passed through the elevating shaft 107.

  The heater elevating mechanism 106 can arrange the heater unit 100 at any intermediate position between the lower position and the upper position by raising and lowering the heater unit 100 via the elevating shaft 107. When the heater unit 100 is at the lower position, the distance between the facing surface 100a and the lower surface of the substrate W is, for example, 15 mm. When the heater unit 100 moves from the lower position to the upper position, the opposing surface 100 a contacts the lower surface of the substrate W before the heater unit 100 reaches the upper position.

  The position of the heater unit 100 when the opposing surface 100 a of the heater unit 100 abuts on the lower surface of the substrate W is referred to as an abutting position. When the plurality of chuck pins 8 are in the open state, the heater unit 100 can move upward beyond the contact position. The substrate W is lifted by the heater unit 100 when the heater unit 100 is positioned above the contact position. The heater unit 100 heats the substrate W in a contact state when it is located above the contact position or at the contact position.

The heater unit 100 heats the substrate W by radiant heat from the facing surface 100 a when positioned below the contact position. As the heater unit 100 is closer to the substrate W, the heating of the substrate W is intensified. The heat medium supply nozzle 24 of the processing unit 2P passes through the hollow lift shaft 107 and further penetrates the heater unit 100.
FIG. 10 is a block diagram showing the electrical configuration of the processing unit 2P according to the second embodiment. As in the first embodiment, the control device 3 of the processing unit 2P according to the second embodiment includes a processor (CPU) 3A and a memory 3B in which a control program is stored, and the processor 3A executes the control program Are configured to perform various controls for substrate processing. The control device 3 includes a spin motor 11, a chuck pin drive mechanism 108, nozzle moving mechanisms 12, 15, 80, a heater energizing mechanism 105, a heater elevating mechanism 106, a guard elevating mechanism 44, and valves 14, 17, 18, 20. 26, 73, 74A, 74B, 74C, 75, 76B, 76C are programmed to control.

  The processing unit 2P according to the second embodiment can perform the same substrate cleaning (see FIG. 4) as the processing unit 2 according to the first embodiment. However, since the behavior of each member in substrate cleaning by the processing unit 2P according to the second embodiment is different from the behavior of each member in the processing unit 2 according to the first embodiment, the second embodiment is described using FIGS. 11A to 11H. Details of substrate cleaning by the processing unit 2P according to the embodiment will be described. 11A to 11H are schematic cross-sectional views for describing an example of substrate cleaning by the processing unit 2P. At the start of substrate processing, the control device 3 controls the heater elevating mechanism 106 to place the heater unit 100 at the lower position.

  In substrate cleaning by the processing unit 2, first, a processing liquid supply process is performed (step S1). In the processing liquid supply step, first, the control device 3 drives the spin motor 11, rotates the spin base 9, and starts rotation of the substrate W. In the processing liquid supply process, the spin base 9 is rotated at a predetermined processing liquid supply speed which is a substrate rotation speed. The processing liquid supply rate is, for example, 10 rpm to several tens of rpm.

  Next, the control device 3 controls the first nozzle moving mechanism 12 to dispose the processing liquid supply nozzle 5 at the central position above the substrate W. Then, the control device 3 opens the valve 14. As a result, as shown in FIG. 11A, the processing liquid 27 is supplied from the processing liquid supply nozzle 5 toward the upper surface of the substrate W in a rotating state. The processing solution 27 supplied to the upper surface of the substrate W is spread over substantially the entire upper surface of the substrate W by the action of the centrifugal force.

After supplying the processing liquid for a fixed time, a film forming step of solidifying or curing the processing liquid to form a particle holding layer on the upper surface of the substrate W is performed (step S2). In the film forming step, first, the control device 3 closes the valve 14 to stop the supply of the processing liquid 27 from the processing liquid supply nozzle 5. Then, the control device 3 moves the processing liquid supply nozzle 5 to the retracted position.
Next, the control device 3 controls the spin motor 11 to rotate the spin base 9 at a predetermined spin-off speed which is the substrate rotation speed (spin-off process, step S2a). The spin-off speed is, for example, 300 rpm to 1500 rpm. Thereby, as shown in FIG. 11B, first, the processing liquid 27 supplied to the upper surface of the substrate W is discharged from the peripheral edge of the upper surface of the substrate W, and then the volatilization of the volatile solvent proceeds.

  Next, the control device 3 controls the spin motor 11 to rotate the spin base 9 at a predetermined heating speed, which is the substrate rotation speed. The heating speed is, for example, 100 rpm to 1,500 rpm. Then, as shown in FIG. 11C, the control device 3 controls the heater elevating mechanism 106 to raise the heater unit 100 from the lower position to bring the heater unit 100 closer to the substrate W than the lower position. Deploy. Thus, the heating of the substrate W by the heater unit 100 is intensified (heating step, step S2b). When the heater unit 100 is located at the close position, the facing surface 100a is separated downward from the lower surface of the substrate W by a predetermined distance (for example, 4 mm).

The change of the rotational speed of the substrate W to the heating speed and the movement of the heater unit 100 to the close position may be simultaneously started, for example.
Then, the volatilization of the volatile solvent proceeds further, and the treatment liquid 27 solidifies or hardens. As a result, a solid film made of a solute component, that is, the particle holding layer 29 is formed.

After heating for a fixed time, a removal process is performed in which the particle holding layer 29 is peeled off and removed from the upper surface of the substrate W (step S3).
Specifically, the control device 3 controls the heater lifting mechanism 106 to move the heater unit 100 from the close position to the lower position. Then, the control device 3 controls the spin motor 11 to rotate the spin base 9 at a predetermined removal speed which is the substrate rotation speed. The removal rate is, for example, 500 rpm to 800 rpm. Then, the control device 3 controls the second nozzle moving mechanism 15 to move the stripping liquid supply nozzle 6 to a central position above the substrate W.

  After the stripping solution supply nozzle 6 reaches the central position above the substrate W, the control device 3 opens the valves 17 and 18 while maintaining the valve 20 closed. Thereby, as shown in FIG. 11D, DIW 31 as the first peeling liquid is supplied from the peeling liquid supply nozzle 6 toward the upper surface of the substrate W in a rotating state (DIW supplying step, step S3a). The DIW 31 supplied to the upper surface of the substrate W spreads over substantially the entire upper surface of the substrate W by the action of the centrifugal force, and is discharged from the peripheral edge of the upper surface of the substrate W.

The change of the rotational speed of the substrate W to the removal speed, the movement of the peeling liquid supply nozzle 6 to the central position, and the movement to the lower position of the heater unit 100 may be started simultaneously.
Next, while rotating the spin base 9 while maintaining the first removal rate, the control device 3 closes the valve 17 to stop the supply of DIW, and then opens the valve 20. Thereby, as shown in FIG. 11E, the SC1 liquid 32 as an example of the second peeling liquid is supplied from the peeling liquid supply nozzle 6 toward the upper surface of the substrate W in a rotating state (SC1 liquid supplying step, Step S3b). The SC1 solution 32 supplied to the upper surface of the substrate W spreads over substantially the entire upper surface of the substrate W by the action of the centrifugal force, replaces the DIW 31, and is discharged from the peripheral edge of the upper surface of the substrate W.

The particle holding layer 29 peeled off from the upper surface of the substrate W is discharged from the peripheral edge of the upper surface of the substrate W together with the peeling liquid by the action of the centrifugal force due to the rotation of the substrate W. That is, the peeled particle holding layer 29 is removed from the upper surface of the substrate W.
Next, after closing the valve 20 and stopping the supply of the SC1 solution, the control device 3 controls the spin motor 11 to rotate the spin base 9 at a predetermined rinse speed which is a substrate rotation speed. The rinse speed is, for example, 100 rpm to 1000 rpm. Then, the control device 3 opens the valve 17. Thereby, as shown in FIG. 11F, DIW 31 as a rinse liquid is supplied from the separation liquid supply nozzle 6 toward the upper surface of the substrate W in a rotating state (rinse process, step S4).

  The supplied DIW 31 spreads over substantially the entire top surface of the substrate W by the action of the centrifugal force, and is discharged from the peripheral edge of the top surface of the substrate W. Thus, the SC1 liquid 32 remaining on the upper surface of the substrate W is washed away from the upper surface of the substrate W. In addition, for example, even if a part of the particle holding layer 29 peeled off from the upper surface of the substrate W in the previous step is removed without being removed, it is washed away from the upper surface of the substrate W by the DIW 31.

However, for example, the conditions of the previous step of supplying DIW 31 (step S3a) and the step of supplying SC1 liquid 32 (step S3b) are adjusted, and the particle holding layer 29 is sufficiently It can also be removed. In that case, the supply step (step S4) of DIW 31 may be omitted.
Then, a residue removing step of removing the residue remaining on the upper surface of the substrate W after removing the particle holding layer 29 is performed (step S5).

That is, the control device 3 controls the spin motor 11 to rotate the spin base 9 at a predetermined residue removal speed which is the substrate rotation speed. The residue removal rate is, for example, several 10 rpm to 300 rpm.
Next, the control device 3 controls the heater elevating mechanism 106 to move the heater unit 100 from the lower position to the close position. The control device 3 closes the valves 17 and 18 to stop the supply of DIW from the peeling liquid supply nozzle 6. Then, the control device 3 controls the second nozzle moving mechanism 15 to move the peeling liquid supply nozzle 6 to the retracted position.

The change of the rotational speed of the substrate W to the removal speed, the movement of the stripping liquid supply nozzle 6 to the retracted position, and the movement of the heater unit 100 to the close position are simultaneously started, for example.
Next, the control device 3 controls the third nozzle moving mechanism 80 to position the moving nozzle 70 at a central position above the substrate W. After the moving nozzle 70 reaches the central position, the controller 3 opens the valve 73. As a result, as shown in FIG. 11G, the residue removing liquid 33 is supplied from the moving nozzle 70 toward the upper surface of the substrate W in a rotating state.

The residue removing solution 33 supplied to the upper surface of the substrate W spreads over substantially the entire upper surface of the substrate W to replace the DIW 31 by the action of the centrifugal force. Then, the residue removing liquid 33 supplied to the upper surface of the substrate W dissolves the residue of the particle holding layer 29 remaining on the upper surface of the substrate W, and is then discharged from the peripheral edge of the upper surface of the substrate W.
Further, the control device 3 opens the valve 74B. Thereby, gas such as nitrogen gas is radially discharged from the horizontal flow discharge port 92 of the movable nozzle 70, and the upper surface of the substrate W is covered with the horizontal air flow 95. The discharge flow rate of nitrogen gas from the horizontal flow discharge port 92 is, for example, about 100 liters / minute. Since the upper surface of the substrate W is covered with the horizontal air flow of nitrogen gas, it is possible to suppress or prevent the droplets splashed from each member in the processing unit 2P, the mist in the atmosphere, and the like from adhering to the upper surface of the substrate W.

  Next, the control device 3 closes the valve 73 to stop the supply of the residue removing liquid 33 from the moving nozzle 70. Thereafter, the control device 3 controls the third nozzle moving mechanism 80 to bring the moving nozzle 70 close to the upper surface of the substrate W. In this state, the control device 3 opens the valve 74A and blows a linear air flow 96 of gas at a rate of, for example, 15 liters / minute from the linear flow discharge port 91 toward the center of the substrate W vertically. Then, the control device 3 controls the heater elevating mechanism 106 to move the heater unit 100 from the close position to the lower position. Then, the control device 3 controls the spin motor 11 to rotate the spin base 9 at a predetermined spin dry speed which is a substrate rotation speed (step S6). The spin dry speed is, for example, 800 rpm.

Centrifugal force acts on the residue removing solution 33 by the rotation of the substrate W, and as shown in FIG. 11H, the residue removing solution 33 is discharged from the peripheral edge of the upper surface of the substrate W and volatilized and removed from the upper surface of the substrate W Be done. The spin dry is performed to complete the series of cleaning steps.
When removing the residue removing liquid 33 from above the substrate W, the controller 3 may open the valve 74C and discharge the gas from the inclined flow discharge port 93, as shown by a two-dot chain line in FIG. 11H. The inclined air flow 97 formed by the gas discharged from the inclined flow discharge port 93 collides with the upper surface of the substrate W, and turns outward in parallel with the upper surface of the substrate W.

Thereafter, the control device 3 closes the valves 74A and 74B to stop the supply of gas from the moving nozzle 70.
After the residue removal step and before the spin dry step, as shown in FIGS. 12A and 12B, when removing the residue removal solution 33 from above the substrate W, the center region of the liquid film of the residue removal solution 33 is The residue removal liquid 33 may be removed from the substrate W by forming the hole 160 and expanding the hole 160.

  Specifically, referring to FIG. 12A, a hole 160 is formed in the central region of the liquid film of residue removal liquid 33 by blowing a linear air flow 96 vertically from the linear flow discharge port 91 toward the center of the substrate W. Be done (drilling process). Referring to FIG. 12B, the linear air flow 96 collides with the top surface of the substrate W and turns outward in a direction parallel to the top surface of the substrate W. Therefore, the hole 160 is spread toward the outer periphery of the substrate W by at least one of the spray force by the linear air flow 96 and the centrifugal force by the rotation of the substrate W (hole spreading step). By moving the liquid film of the residue removing liquid 33, the residue removing liquid 33 is removed out of the substrate W. In the drilling process and the hole expanding process, the heater unit 100 may be located at the lower position (the position shown by the solid line in FIGS. 12A and 12B) or at the close position (the two-dot chain line in FIGS. 12A and 12B). (The position shown).

As mentioned above, although embodiment of this invention was described, this invention can also be implemented with another form.
For example, instead of supplying the heat medium 28 to the back surface of the substrate W to heat the processing liquid, heat from a heat source such as a lamp or an electric heater may be used. The heating of the substrate W may be performed in a dedicated chamber. Furthermore, the steps of film formation, peeling, and residue removal of the particle holding layer 29 may be performed in different chambers.

The processing liquid, the peeling liquid, and the residue removing liquid may be supplied to substantially the entire top surface of the substrate W substantially simultaneously from, for example, a plurality of nozzle holes arranged in a line.
Other processes may be added to the processes shown in the embodiment in each process of the cleaning method by the substrate cleaning apparatus 1.
As the solute, in addition to the various resins described above, for example, an organic compound other than the resin, or a mixture with an organic compound may be used. Alternatively, compounds other than organic compounds may be used.

As the stripping solution, it is also possible to use another stripping solution that is not aqueous. In that case, the solute forming the particle holding layer 29 which is hardly soluble or insoluble in the stripping solution, the solvent having compatibility with the stripping solution, and the solubility with respect to the solute, the phase with respect to the stripping solution It is sufficient to combine appropriately a residue-removing solution which is soluble and soluble in the solute.
Besides, various design changes can be made within the scope of the matters described in the claims.

1 substrate cleaning apparatus 2 processing unit 2P processing unit 3 control device 5 processing liquid supply nozzle (processing liquid supply unit)
6 Stripping solution supply nozzle (stripping solution supply unit)
7 Residue removal liquid supply nozzle (residue removal liquid supply unit)
24 Heat Medium Supply Nozzle (Heating Unit)
27 treatment liquid 28 heat medium 29 particle holding layer 31 DIW (stripping liquid)
32 SC1 solution (stripping solution)
33 Residue removal liquid 70 Moving nozzle (residue removal liquid supply unit)
W substrate

Claims (13)

Supplying a processing liquid containing a solute and a solvent having volatility to a top surface of the substrate;
Forming a particle holding layer on the upper surface of the substrate by solidifying or curing the processing solution by volatilizing at least a part of the solvent from the processing solution supplied to the upper surface of the substrate; ,
And removing the particle holding layer from the upper surface of the substrate by supplying a peeling liquid for peeling the particle holding layer onto the upper surface of the substrate;
Including
The solute component, which is the solute contained in the particle retention layer, is insoluble in the stripping solution before heating to a temperature above the alteration temperature, and is altered by heating to a temperature above the alteration temperature to form the stripping solution. Have the property of becoming soluble
The film forming step forms the particle holding layer on the upper surface of the substrate without deteriorating the solute component by heating the treatment liquid supplied to the upper surface of the substrate to a temperature lower than the deterioration temperature. Including a heating step
A residue removing solution having solubility with respect to the solute component before heating is supplied to the upper surface of the substrate after the removing step above the alteration temperature to remain on the upper surface of the substrate after removing the particle holding layer The substrate washing | cleaning method which further includes the residue removal process which removes a residue.   In the heating step, the processing liquid supplied to the upper surface of the substrate is heated to a temperature lower than the deterioration temperature by supplying a heat medium having a boiling point lower than the deterioration temperature to the back surface which is the lower surface of the substrate. The substrate cleaning method according to claim 1.   The substrate cleaning method according to claim 1, wherein the processing liquid on the substrate heated in the heating step is less than the boiling point of the solvent.   The substrate cleaning method according to claim 3, wherein the stripping solution has compatibility with the solvent. Supplying a processing liquid containing a solute and a solvent having volatility to a top surface of the substrate;
Forming a particle holding layer on the upper surface of the substrate by solidifying or curing the processing solution by volatilizing at least a part of the solvent from the processing solution supplied to the upper surface of the substrate; ,
And removing the particle holding layer from the upper surface of the substrate by supplying a peeling liquid for peeling the particle holding layer onto the upper surface of the substrate;
And the film forming step supplies a heat medium to the back surface which is the lower surface of the substrate, and heats the processing solution supplied to the upper surface of the substrate to a temperature lower than the boiling point of the heat medium. A heating step of forming the particle holding layer on the upper surface of the substrate;
The upper surface of the substrate after the particle holding layer is removed by supplying a residue removing solution having solubility to the solute component which is the solute contained in the particle holding layer on the upper surface of the substrate after the removing step. A method of cleaning a substrate, the method further comprising the step of removing the residue remaining in the substrate.   The substrate cleaning method according to claim 5, wherein the processing liquid on the substrate heated in the heating step is less than the boiling point of the solvent.   The substrate cleaning method according to claim 6, wherein the stripping solution has compatibility with the solvent. Supplying a processing liquid containing a solute and a solvent having volatility to a top surface of the substrate;
Forming a particle holding layer on the upper surface of the substrate by solidifying or curing the processing solution by volatilizing at least a part of the solvent from the processing solution supplied to the upper surface of the substrate; ,
And removing the particle holding layer from the upper surface of the substrate by supplying a peeling liquid for peeling the particle holding layer onto the upper surface of the substrate;
And forming the particle holding layer on the upper surface of the substrate by heating the treatment liquid supplied to the upper surface of the substrate to a temperature less than the boiling point of the solvent. Including
The upper surface of the substrate after the particle holding layer is removed by supplying a residue removing solution having solubility to the solute component which is the solute contained in the particle holding layer on the upper surface of the substrate after the removing step. A method of cleaning a substrate, the method further comprising the step of removing the residue remaining in the substrate.   The substrate cleaning method according to claim 8, wherein the stripping solution has compatibility with the solvent. A processing liquid supply unit for supplying a processing liquid containing a solute and a solvent having volatility to the upper surface of the substrate;
A heating unit for heating the substrate to evaporate at least a part of the solvent, thereby solidifying or curing the treatment liquid, and forming a particle holding layer on the upper surface of the substrate;
A peeling liquid supply unit for supplying a peeling liquid for peeling the particle holding layer onto the upper surface of the substrate;
A residue removing liquid supply unit for supplying a residue removing liquid for removing a residue remaining on the upper surface of the substrate after the particle holding layer is peeled and removed on the upper surface of the substrate;
A control device that controls the processing liquid supply unit, the heating unit, the stripping liquid supply unit, and the residue removing liquid supply unit;
Including
The solute component which is the solute contained in the particle retention layer is poorly soluble or insoluble in the stripping solution before heating to a temperature above the alteration temperature, and is altered by heating to a temperature above the alteration temperature, It has the property of becoming soluble in stripping solution,
The residue-removing solution has solubility in the solute component before heating to a temperature above the deterioration temperature,
The control device volatilizes at least a portion of the solvent from the treatment liquid supplied from the treatment liquid supplied to the upper surface of the substrate and supplies the treatment liquid to the upper surface of the substrate. A film forming step of forming the particle holding layer on the upper surface of the substrate without deteriorating the solute component by heating to a temperature lower than the deterioration temperature, and supplying the stripping solution to the upper surface of the substrate Removing the particle holding layer from the upper surface of the substrate and removing the particle holding layer from the upper surface of the substrate; supplying the residue-removing solution to the upper surface of the substrate to remove the particle holding layer; A substrate cleaning apparatus that performs a residue removing step of removing remaining residues.   The substrate cleaning apparatus according to claim 10, wherein the heating unit includes a heat medium supply unit for supplying a heat medium having a boiling point lower than the deterioration temperature to the back surface of the substrate. A processing liquid supply unit for supplying a processing liquid containing a solute and a solvent having volatility to the upper surface of the substrate;
The process includes heating a heat medium supply unit for supplying a heat medium to the back surface of the substrate, and heating the substrate by a heat medium supplied from the heat medium supply unit to volatilize at least a part of the solvent. A heating unit for solidifying or curing the liquid to form a particle holding layer on the upper surface of the substrate;
A peeling liquid supply unit for supplying a peeling liquid for peeling the particle holding layer onto the upper surface of the substrate;
A residue removing liquid supply unit for supplying a residue removing liquid for removing a residue remaining on the upper surface of the substrate after the particle holding layer is peeled and removed on the upper surface of the substrate;
A control device that controls the processing liquid supply unit, the heating unit, the stripping liquid supply unit, and the residue removing liquid supply unit;
Including
The residue removing liquid has solubility in a solute component which is the solute contained in the particle holding layer,
The control device volatilizes at least a portion of the solvent from the treatment liquid supplied from the treatment liquid supplied to the upper surface of the substrate and supplies the treatment liquid to the upper surface of the substrate. A film forming step of forming the particle holding layer on the upper surface of the substrate by heating to a temperature less than the boiling point of the heat medium, and supplying the release liquid to the upper surface of the substrate Removing the particle holding layer and removing the residue; and removing the residue remaining on the upper surface of the substrate after removing the particle holding layer by supplying the residue removing liquid to the upper surface of the substrate A substrate cleaning apparatus that performs processes. A processing liquid supply unit for supplying a processing liquid containing a solute and a solvent having volatility to the upper surface of the substrate;
A heating unit for heating the substrate to evaporate at least a part of the solvent, thereby solidifying or curing the treatment liquid, and forming a particle holding layer on the upper surface of the substrate;
A peeling liquid supply unit for supplying a peeling liquid for peeling the particle holding layer onto the upper surface of the substrate;
A residue removing liquid supply unit for supplying a residue removing liquid for removing a residue remaining on the upper surface of the substrate after the particle holding layer is peeled and removed on the upper surface of the substrate;
A control device that controls the processing liquid supply unit, the heating unit, the stripping liquid supply unit, and the residue removing liquid supply unit;
Including
The residue removing liquid has solubility in a solute component which is the solute contained in the particle holding layer,
The control device volatilizes at least a portion of the solvent from the treatment liquid supplied from the treatment liquid supplied to the upper surface of the substrate and supplies the treatment liquid to the upper surface of the substrate. A film forming step of forming the particle holding layer on the upper surface of the substrate by heating to a temperature lower than the boiling point of the solvent, and supplying the release liquid to the upper surface of the substrate to form the upper surface of the substrate Removing the particle holding layer and removing the residue; and removing the residue remaining on the top surface of the substrate after removing the particle holding layer by supplying the residue removing liquid to the top surface of the substrate And substrate cleaning equipment to perform.

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