TWI667689B - Substrate cleaning method and substrate cleaning apparatus - Google Patents

Abstract

The substrate cleaning method of the present invention comprises the steps of: a treatment liquid supply step of supplying a treatment liquid containing a solute and a volatile solvent to the upper surface of the substrate; and a film formation step of self-supplying to the upper surface of the substrate In the treatment liquid, at least a part of the solvent is volatilized, and the treatment liquid is cured or cured to form a fine particle-retaining layer on the surface of the substrate; and a removing step of supplying the fine particle-retaining layer to the upper surface of the substrate The stripping liquid is peeled off from the upper surface of the substrate and the above-mentioned fine particle holding layer is removed. The solute component, which is the solute contained in the fine particle-retaining layer, has a property of being insoluble in the peeling liquid before being heated to a temperature higher than the deterioration temperature, and is deteriorated by heating to the above-described deterioration temperature, thereby being soluble in the peeling liquid. The film forming step includes a heating step of heating the processing liquid supplied to the upper surface of the substrate to a temperature that does not reach the deterioration temperature, without causing the solute component to be deteriorated on the upper surface of the substrate. The above microparticle-retaining layer. Further, the substrate cleaning method further includes a residue removing step of supplying a residue removing liquid having solubility to the solute component before heating to the deterioration temperature or higher to the surface of the substrate after the removing step, and remaining in the residue removing liquid The residue on the upper surface of the substrate after removing the above-mentioned fine particle holding layer is removed.

Description

Substrate cleaning method and substrate cleaning device

The present invention relates to a substrate cleaning method and a substrate cleaning apparatus. Examples of the substrate to be processed include a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for an FPD (Flat Panel Display) such as an organic EL (Electroluminescence) display device, a substrate for a disk, and a disk. A substrate, a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, a solar cell substrate, or the like.

In the manufacturing process of the semiconductor device, in order to remove various contaminants adhering to the substrate, residues of the treatment liquid and the resist used in the previous step, or various fine particles (hereinafter sometimes referred to as "fine particles") Washed.

In the washing step, the cleaning liquid is generally supplied to the substrate by supplying a cleaning liquid such as deionized water (DIW: DeIonized Water) to physically remove the particles, or chemically supplied to the substrate by chemically reacting the particles with the particles. The particles are removed.

However, the miniaturization and complication of the pattern formed on the substrate has been progressing. Therefore, physical or chemical removal of particles is becoming increasingly difficult.

In response to this, a method is proposed in which a treatment liquid containing a solute and a volatile solvent is supplied to a surface of the substrate to form a film which cures or hardens the treatment liquid (hereinafter referred to as "particle retention layer"). Thereafter, the fine particle-retaining layer is dissolved and removed (Japanese Patent Laid-Open No. Hei. No. 2014-197717 and U.S. Patent Application Publication No. 2015/128994).

In this method, when the treatment liquid is solidified or hardened to form a particulate retention layer, the microparticles are separated from the substrate. And, the separated fine particles are held in the fine particle holding layer.

Next, the dissolution treatment liquid is supplied to the upper surface of the substrate. By removing the fine particle-retaining layer on the substrate and removing it, the fine particles and the fine particle-retaining layer are removed from the upper surface of the substrate (Japanese Patent Laid-Open Publication No. 2014-197717).

Alternatively, there is a case where the peeling treatment liquid is supplied to the upper surface of the substrate. Thereby, the fine particle holding layer is peeled off from the upper surface of the substrate. Next, the fine particle-retaining layer is dissolved on the substrate by supplying the dissolution treatment liquid (refer to the specification of U.S. Patent Application Publication No. 2015/128994).

However, in the method of the specification of Japanese Laid-Open Patent Publication No. 2014-197717 and the specification of the U.S. Patent Application Publication No. 2015/128994, the microparticle-retaining layer is dissolved on the substrate by any method, so that the microparticles dissolve while being self-particles. The layer is removed and attached to the substrate. Therefore, the particle removal rate is not as high as expected.

Therefore, the inventors of the present invention studied not to dissolve the exfoliated microparticle-preserving layer and remove it from the upper surface of the substrate. Specifically, after the fine particle-retaining layer is peeled off from the upper surface of the substrate, for example, a cleaning liquid is supplied to the upper surface of the substrate, whereby the upper surface of the substrate is washed.

However, in this case, it is known that the minute residue caused by the fine particle holding layer is not peeled off from the upper surface of the substrate and remains on the upper surface of the substrate, or the peeled residue is reattached to the upper surface of the substrate.

In view of the above, an object of the present invention is to provide a substrate cleaning method and substrate cleaning which can remove particles from the upper surface of the substrate at a high removal rate, and can prevent the residue of the particle holding layer from remaining or reattaching to the upper surface of the substrate. Device.

In order to achieve the above object, the present invention provides a first substrate cleaning method comprising: a processing liquid supply step of supplying a treatment liquid containing a solute and a volatile solvent to an upper surface of the substrate; and a film formation step by At least a part of the solvent is volatilized from the treatment liquid supplied onto the upper surface of the substrate, and the treatment liquid is solidified or cured to form a fine particle-retaining layer on the upper surface of the substrate; and a removal step is performed on the substrate The upper surface is supplied with a stripping liquid which peels off the fine particle holding layer, and the surface of the upper surface of the substrate is peeled off and the fine particle holding layer is removed.

In the method, the solute component, which is the solute contained in the fine particle-retaining layer, has a property of being poorly soluble or insoluble in the peeling liquid before being heated to a temperature higher than the deterioration temperature, and is deteriorated by heating to the above-described deterioration temperature or higher. It is soluble in the above stripping solution. The film forming step includes a heating step of heating the processing liquid supplied to the upper surface of the substrate to a temperature that does not reach the deterioration temperature without deforming the solute component to form the fine particle retention on the upper surface of the substrate. Floor. The residue removing step supplies a residue removing liquid having solubility to the solute component before heating to the above-described deterioration temperature to the upper surface of the substrate after the removing step, and remaining on the substrate after removing the fine particle holding layer The residue on the upper surface is removed.

According to this method, the treatment liquid is solidified or hardened in the film formation step including the heating step. Thereby, a fine particle-retaining layer which is insoluble or insoluble in the peeling liquid but which can be peeled off by the peeling liquid can be formed on the upper surface of the substrate.

The particles are separated from the substrate as the treatment liquid solidifies or hardens. The separated particles are held in the particle holding layer. Therefore, in the removing step, the fine particle holding layer formed on the upper surface of the substrate may be dissolved without being dissolved by the stripping liquid together with the particles held in the fine particle holding layer from the substrate by supplying the stripping liquid to the upper surface of the substrate. The upper surface is peeled off and removed.

Further, in the subsequent residue removing step, the residue removing liquid having the property of dissolving the solute component forming the fine particle holding layer is supplied to the upper surface of the substrate after removing the fine particle holding layer, whereby the fine particle retaining layer can be dissolved. The residue is removed from the upper surface of the substrate.

Therefore, according to this method, the fine particles can be removed at a high removal rate by peeling the fine particle-retaining layer together with the retained fine particles from the upper surface of the substrate. Further, it is possible to suppress the residue of the fine particle-retaining layer from remaining or reattaching to the upper surface of the substrate.

According to an embodiment of the present invention, in the heating step, the processing liquid supplied to the upper surface of the substrate is heated by supplying a heat medium having a boiling point not lower than the deterioration temperature to the back surface of the substrate, that is, the back surface. The temperature to the above deterioration temperature is not reached.

According to this method, the heating step in the film forming step can be performed by a simple heating method of supplying a heat medium to the back surface of the substrate.

Therefore, for example, it is not necessary to provide an electric heater or the like in the chamber, or to transport the substrate to another chamber provided with an electric heater or the like to perform a heating step. That is, the steps of the substrate cleaning method can be simplified.

In one embodiment of the invention, the temperature of the treatment liquid on the substrate heated in the heating step does not reach the boiling point of the solvent.

According to this method, the solvent can be left in the fine particle-retaining layer heated by the heating step in the film forming step. Therefore, in the subsequent removal step, the fine particle-retaining layer can be easily peeled off from the upper surface of the substrate by the interaction of the solvent remaining in the fine particle-retaining layer and the supplied peeling liquid. That is, the fine particle holding layer can be floated from the upper surface of the substrate and peeled off by allowing the peeling liquid to permeate into the fine particle holding layer and reaching the interface with the substrate.

In order to further improve this effect, it is preferred that the above-mentioned stripping liquid has compatibility with the above solvent.

The present invention further provides a second substrate cleaning method comprising the steps of: a treatment liquid supply step of supplying a treatment liquid containing a solute and a volatile solvent to an upper surface of the substrate; and a film formation step of self-supplying to At least a part of the solvent is volatilized in the treatment liquid on the upper surface of the substrate, and the treatment liquid is solidified or cured to form a fine particle-retaining layer on the surface of the substrate; and a removal step is performed to supply the surface of the substrate The stripping liquid of the fine particle-retaining layer is peeled off from the upper surface of the substrate to remove the fine particle-retaining layer; and a residue removing step. Further, the film forming step includes a heating step of supplying the processing liquid supplied to the upper surface of the substrate to a temperature lower than a boiling point of the heat medium by supplying the surface to the lower surface of the substrate, that is, the back surface. The fine particle holding layer is formed on the upper surface of the substrate. Further, the residue removing step supplies a residue removing liquid having solubility to the solute component which is the solute contained in the fine particle holding layer to the upper surface of the substrate after the removing step, and remains in the particulate retaining layer. The residue on the surface above the substrate is removed.

According to this method, the treatment liquid is solidified or hardened in the film formation step including the heating step. Thereby, a fine particle-retaining layer which can be peeled off by the peeling liquid is formed on the upper surface of the substrate.

The particles are separated from the substrate as the treatment liquid solidifies or hardens. The separated particles are held in the particle holding layer. Therefore, in the removing step, the fine particle holding layer formed on the upper surface of the substrate can be peeled off from the upper surface of the substrate together with the fine particles held in the fine particle holding layer by supplying the peeling liquid to the upper surface of the substrate. Remove.

Further, in the subsequent residue removing step, the residue removing liquid having the property of dissolving the solute component forming the fine particle holding layer is supplied to the upper surface of the substrate after removing the fine particle holding layer, whereby the residue of the fine particle holding layer can be removed Dissolved and removed from the upper surface of the substrate.

Therefore, according to this method, the fine particles can be removed at a high removal rate by peeling the fine particle-retaining layer together with the retained fine particles from the upper surface of the substrate. Further, it is possible to suppress the residue of the fine particle-retaining layer from remaining or reattaching to the upper surface of the substrate.

Further, according to this method, the heating step in the film forming step can be performed by a simple heating method of supplying a heat medium to the back surface of the substrate.

Therefore, for example, it is not necessary to provide an electric heater or the like in the chamber, or to transport the substrate to another chamber provided with an electric heater or the like to perform a heating step. That is, the steps of the substrate cleaning method can be simplified.

In one embodiment of the invention, the temperature of the treatment liquid on the substrate heated in the heating step does not reach the boiling point of the solvent.

According to this method, the solvent can be left in the fine particle-retaining layer heated in the heating step in the film forming step. Therefore, in the subsequent removal step, the fine particle-retaining layer can be easily peeled off from the upper surface of the substrate by the interaction of the solvent remaining in the fine particle-retaining layer and the supplied peeling liquid. That is, the fine particle holding layer can be floated from the upper surface of the substrate and peeled off by allowing the peeling liquid to permeate into the fine particle holding layer and bringing the peeling liquid to the interface between the fine particle holding layer and the substrate.

In order to further improve this effect, it is preferred that the above-mentioned stripping liquid has compatibility with the above solvent.

The present invention further provides a third substrate cleaning method comprising the steps of: a treatment liquid supply step of supplying a treatment liquid containing a solute and a volatile solvent to an upper surface of the substrate; and a film formation step of self-supplying to At least a part of the solvent is volatilized in the treatment liquid on the upper surface of the substrate, and the treatment liquid is solidified or cured to form a fine particle-retaining layer on the surface of the substrate; and a removing step of peeling off the fine particle-retaining layer The liquid is supplied to the upper surface of the substrate, and the fine particle holding layer is peeled off from the upper surface of the substrate; and a residue removing step. Further, the film forming step includes a heating step of forming the fine particle holding layer on the upper surface of the substrate by heating the processing liquid supplied onto the upper surface of the substrate to a temperature not lower than the boiling point of the solvent. Further, the residue removing step supplies a residue removing liquid having solubility to the solute component which is the solute contained in the fine particle holding layer to the upper surface of the substrate after the removing step, and remains after removing the fine particle holding layer. The residue on the surface above the substrate is removed.

According to this method, the treatment liquid is solidified or hardened in the film formation step including the heating step. Thereby, a fine particle-retaining layer which can be peeled off by the peeling liquid is formed on the upper surface of the substrate.

The particles are separated from the substrate as the treatment liquid solidifies or hardens. The separated particles are held in the particle holding layer. Therefore, in the removing step, the fine particle holding layer formed on the upper surface of the substrate can be peeled off from the upper surface of the substrate together with the fine particles held in the fine particle holding layer by supplying the peeling liquid to the upper surface of the substrate. Remove.

Further, in the subsequent residue removing step, a residue removing liquid having a property of dissolving a solute component forming the fine particle holding layer is supplied to the upper surface of the substrate after removing the fine particle holding layer, whereby the fine particle retaining layer can be provided The residue is dissolved and removed from the upper surface of the substrate.

Therefore, according to this method, the fine particles can be removed at a high removal rate by peeling the fine particle-retaining layer together with the retained fine particles from the upper surface of the substrate. Further, it is possible to suppress the residue of the fine particle-retaining layer from remaining or reattaching to the upper surface of the substrate.

Further, according to this method, the solvent can be left in the fine particle-retaining layer heated in the heating step in the film forming step. Therefore, in the subsequent removal step, the fine particle-retaining layer can be easily peeled off from the upper surface of the substrate by the interaction of the solvent remaining in the fine particle-retaining layer and the supplied peeling liquid. That is, the fine particle holding layer can be floated from the upper surface of the substrate and peeled off by allowing the peeling liquid to permeate into the fine particle holding layer and reaching the interface with the substrate.

In order to further improve this effect, it is preferred that the above-mentioned stripping liquid has compatibility with the above solvent.

Further, the present invention provides a first substrate cleaning apparatus comprising: a processing liquid supply unit that supplies a processing liquid containing a solute and a volatile solvent to an upper surface of the substrate; and a heating unit that heats the substrate to cause the solvent At least a part of the treatment liquid is cured or cured to form a fine particle-retaining layer on the upper surface of the substrate, and a peeling liquid supply unit that supplies the peeling liquid that peels off the fine particle-retaining layer to the upper surface of the substrate; a liquid supply unit that supplies, to the upper surface of the substrate, a residue removing liquid that removes residues remaining on the upper surface of the substrate after peeling off and removing the fine particle holding layer; and a controller that controls the processing liquid supply unit, The heating unit, the peeling liquid supply unit, and the residue removing liquid supply unit. The solute component, which is the solute contained in the fine particle-retaining layer, has a property of being insoluble or insoluble in the above-mentioned peeling liquid before being heated to a temperature higher than the deterioration temperature, and is deteriorated by heating to the above-described deterioration temperature, thereby being soluble in the above-mentioned peeling liquid. The residue removal liquid has solubility in the solute component before heating to the above-described deterioration temperature or higher. The controller is programmed to perform the following steps: a treatment liquid supply step of supplying the treatment liquid to the upper surface of the substrate; and a film formation step of causing the solvent to be supplied from the treatment liquid supplied to the upper surface of the substrate At least a part of the volatilization is performed, and the treatment liquid is heated to a temperature that does not reach the deterioration temperature without deforming the solute component to form the microparticle-retaining layer on the upper surface of the substrate; and the removing step is performed on the upper surface of the substrate Supplying the stripping liquid, and peeling off and removing the fine particle holding layer from the upper surface of the substrate; and a residue removing step of supplying the residue removing liquid onto the upper surface of the substrate, and remaining in the above-mentioned removal of the fine particle holding layer The residue on the surface above the substrate is removed.

According to this configuration, the treatment liquid is solidified or hardened in the film formation step including the heating step. Thereby, a fine particle-retaining layer which is insoluble or insoluble in the peeling liquid but peeled off by the peeling liquid is formed on the upper surface of the substrate.

The particles are separated from the substrate as the treatment liquid solidifies or hardens. The separated particles are held in the particle holding layer. Therefore, in the removing step, the fine particle holding layer formed on the upper surface of the substrate can be dissolved from the peeling liquid together with the fine particles held in the fine particle holding layer from the substrate by supplying the peeling liquid to the upper surface of the substrate. The surface is peeled off and removed.

Further, in the subsequent residue removing step, a residue removing liquid having a property of dissolving a solute component forming the fine particle holding layer is supplied to the upper surface of the substrate after removing the fine particle holding layer, whereby the fine particle retaining layer can be provided The residue is dissolved and removed from the upper surface of the substrate.

Therefore, according to this configuration, the fine particles can be removed at a high removal rate by peeling the fine particle-retaining layer together with the retained fine particles from the upper surface of the substrate. Further, it is possible to suppress the residue of the fine particle-retaining layer from remaining or reattaching to the upper surface of the substrate.

In one embodiment of the present invention, the heating unit includes a heat medium supply unit that supplies a heat medium having a boiling point that does not reach the deterioration temperature to a lower surface of the substrate.

According to this configuration, the heating step in the film forming step can be performed by a simple heating mechanism (heat medium supply unit) that supplies the heat medium to the lower surface of the substrate.

Therefore, for example, it is not necessary to provide an electric heater or the like in the chamber, or to transport the substrate to another chamber provided with an electric heater or the like to perform a heating step. That is, the configuration of the substrate cleaning apparatus can be simplified.

Further, the present invention provides a second substrate cleaning apparatus including: a processing liquid supply unit that supplies a processing liquid containing a solute and a volatile solvent to an upper surface of the substrate; and a heating unit including the lower surface of the substrate a heat medium supply unit for heat medium, wherein the substrate is heated by a heat medium supplied from the heat medium supply unit to volatilize at least a part of the solvent, and the treatment liquid is solidified or cured to form particles on the surface of the substrate. a release layer supply unit that supplies a peeling liquid that peels off the fine particle holding layer onto the upper surface of the substrate; and a residue removing liquid supply unit that supplies the remaining surface to the substrate and removes the fine particle holding layer a residue removing liquid for removing the residue on the upper surface of the substrate; and a controller for controlling the processing liquid supply unit, the heating unit, the stripping liquid supply unit, and the residue removing liquid supply unit; and the residue removing liquid The solute component, which is the solute contained in the fine particle-retaining layer, has solubility. The controller is programmed to perform the following steps: a treatment liquid supply step of supplying the treatment liquid to the upper surface of the substrate; and a film formation step of causing the solvent to be supplied from the treatment liquid supplied to the upper surface of the substrate At least a part of the volatilization, and heating the treatment liquid to a temperature that does not reach the boiling point of the heat medium, forming the fine particle holding layer on the upper surface of the substrate; and removing the step of supplying the stripping liquid to the upper surface of the substrate, And removing the fine particle holding layer from the upper surface of the substrate; and a residue removing step of supplying the residue removing liquid to the upper surface of the substrate, and remaining on the upper surface of the substrate after removing the fine particle holding layer The residue is removed.

According to this configuration, in the film forming step including the heating step, the treatment liquid is solidified or hardened, and a fine particle-retaining layer which can be peeled off from the peeling liquid is formed on the upper surface of the substrate.

The particles are separated from the substrate as the treatment liquid solidifies or hardens. The separated particles are held in the particle holding layer. Therefore, in the removing step, the fine particle holding layer formed on the upper surface of the substrate and the fine particles held in the fine particle holding layer are peeled off from the upper surface of the substrate and removed by supplying the peeling liquid to the upper surface of the substrate. .

Further, in the subsequent residue removing step, a residue removing liquid having a property of dissolving a solute component forming the fine particle holding layer is supplied to the upper surface of the substrate after removing the fine particle holding layer, whereby the fine particle retaining layer can be provided The residue is dissolved and removed from the upper surface of the substrate.

Therefore, according to this configuration, the fine particles can be removed at a high removal rate by peeling the fine particle-retaining layer together with the retained fine particles from the upper surface of the substrate. Further, it is possible to suppress the residue of the fine particle-retaining layer from remaining or reattaching to the upper surface of the substrate.

Further, according to this configuration, the heating step in the film forming step can be performed by a simple heating means (heat medium supply means) for supplying a heat medium to the lower surface of the substrate.

Therefore, for example, it is not necessary to provide an electric heater or the like in the chamber, or to transport the substrate to another chamber provided with an electric heater or the like to perform a heating step. That is, the configuration of the substrate cleaning apparatus can also be simplified.

The present invention provides a third substrate cleaning apparatus including: a processing liquid supply unit that supplies a processing liquid containing a solute and a volatile solvent to an upper surface of the substrate; and a heating unit that heats the substrate to at least the solvent a part of the volatilization, whereby the treatment liquid is solidified or hardened, and a fine particle-retaining layer is formed on the upper surface of the substrate; and a peeling liquid supply unit supplies the peeling liquid for peeling off the fine particle-retaining layer to the upper surface of the substrate; the residue removing liquid a supply unit that supplies a residue removing liquid that removes residues remaining on the surface of the substrate remaining after peeling off and removing the fine particle holding layer, and a controller that controls the processing liquid supply unit and the above The heating unit, the peeling liquid supply unit, and the residue removing liquid supply unit. The residue removal liquid has solubility in the solute component which is the solute contained in the fine particle-retaining layer. The controller is programmed to perform the following steps: a treatment liquid supply step of supplying the treatment liquid to the upper surface of the substrate; and a film formation step of causing the solvent to be supplied from the treatment liquid supplied to the upper surface of the substrate At least a part of the volatilization, and heating the treatment liquid to a temperature not reaching the boiling point of the solvent, forming the fine particle retaining layer on the upper surface of the substrate; and removing the step of supplying the stripping liquid to the upper surface of the substrate Removing and removing the fine particle-retaining layer from the upper surface of the substrate; and a residue removing step of removing the residue from the upper surface of the substrate after removing the residue-retaining layer .

According to this configuration, the treatment liquid is solidified or hardened in the film formation step including the heating step. Thereby, a particle holding layer which can be peeled off by the peeling liquid is formed on the upper surface of the substrate.

The particles are separated from the substrate as the treatment liquid solidifies or hardens. The separated particles are held in the particle holding layer. Therefore, in the removing step, the fine particle holding layer formed on the upper surface of the substrate and the fine particles held in the fine particle holding layer are peeled off from the upper surface of the substrate and removed by supplying the peeling liquid to the upper surface of the substrate. .

Further, in the subsequent residue removing step, a residue removing liquid having a property of dissolving a solute component forming the fine particle holding layer is supplied to the upper surface of the substrate after removing the fine particle holding layer, whereby the fine particle retaining layer can be provided The residue is dissolved and removed from the upper surface of the substrate.

Therefore, according to this configuration, the fine particles can be removed at a high removal rate by peeling the fine particle-retaining layer together with the retained fine particles from the upper surface of the substrate. Further, it is possible to suppress the residue of the fine particle-retaining layer from remaining or reattaching to the upper surface of the substrate.

Further, according to this configuration, the solvent can be left in the fine particle-retaining layer heated in the heating step in the film forming step. Therefore, in the subsequent removal step, the fine particle-retaining layer can be easily peeled off from the upper surface of the substrate by the interaction of the solvent remaining in the fine particle-retaining layer and the supplied peeling liquid. That is, the fine particle holding layer can be floated from the upper surface of the substrate and peeled off by allowing the peeling liquid to permeate into the fine particle holding layer and reaching the interface with the substrate.

The above and other objects, features, and advantages of the invention will be apparent from the description and appended claims appended claims

<First embodiment>

Fig. 1 is a schematic plan view showing the layout of a substrate cleaning apparatus 1 according to a first embodiment of the present invention. The substrate cleaning device 1 is a one-chip device in which a substrate W such as a wafer is washed one by one. In the present embodiment, the substrate W is a disk-shaped substrate.

The substrate cleaning apparatus 1 includes a plurality of processing units 2 for cleaning the substrate W, and a loader LP for carrying a carrier C for accommodating a plurality of substrates W to be cleaned by the processing unit 2; and transporting the robots IR and CR, This is equivalent to transporting the substrate W between the loader LP and the processing unit 2; and a controller 3 that controls the substrate cleaning device 1.

The transport robot IR transports the substrate W between the carrier C and the transfer robot CR. The transport robot CR transports the substrate W between the transport robot IR and the processing unit 2 . The plurality of processing units 2 have the same configuration, for example.

FIG. 2 is a schematic cross-sectional view showing a schematic configuration of the processing unit 2 provided in the substrate cleaning apparatus 1.

The processing unit 2 includes a rotating chuck 4 that holds a substrate W in a horizontal posture and rotates the substrate W about a vertical rotation axis A1 passing through the center of the substrate W; a processing liquid supply nozzle 5 that is held in the rotation clamp A processing liquid containing a solute and a volatile solvent is supplied to the upper surface of the substrate W of the disk 4, and a peeling liquid supply nozzle 6 for supplying the peeling liquid to the upper surface of the substrate W held by the rotary chuck 4. The treatment liquid supply nozzle 5 is an example of a treatment liquid supply unit. The peeling liquid supply nozzle 6 is an example of a peeling liquid supply unit.

The rotary chuck 4 includes a chuck pin 8, a rotary base 9, a rotary shaft 10, and a rotary motor 11 that rotates the substrate W about the rotation axis A1.

The rotating shaft 10 extends in the vertical direction along the rotation axis A1, and is a hollow shaft in the present embodiment. The upper end of the rotating shaft 10 is coupled to the center of the lower surface of the rotating base 9. The rotating base 9 has a disk shape along the horizontal direction. At a peripheral portion of the upper surface of the rotary base 9, a plurality of chuck pins 8 for holding the substrate W are disposed at intervals in the circumferential direction. The rotary motor 11 includes, for example, an electric motor that integrally rotates the substrate W, the chuck pin 8, the rotary base 9, and the rotary shaft 10 about the rotation axis A1 by imparting a rotational force to the rotary shaft 10.

The processing liquid supply nozzle 5 is moved by, for example, the first nozzle moving mechanism 12 in the horizontal direction (perpendicular to the rotation axis A1). The treatment liquid supply nozzle 5 is movable between the center position and the retracted position by moving in the horizontal direction. When the processing liquid supply nozzle 5 is at the center position, it is opposed to the rotational center position of the upper surface of the substrate W. When the processing liquid supply nozzle 5 is located at the retracted position, it does not face the upper surface of the substrate W. The position of the center of rotation of the upper surface of the substrate W means a position at which the upper surface of the substrate W intersects with the rotation axis A1. The retracted position that does not face the upper surface of the substrate W refers to the position outside the rotating base 9 in plan view. The processing liquid supply pipe 13 is connected to the processing liquid supply nozzle 5. The treatment liquid supply pipe 13 is provided with a valve 14 that opens and closes its flow path.

The peeling liquid supply nozzle 6 is moved by the second nozzle moving mechanism 15 in the horizontal direction (the direction perpendicular to the rotation axis A1), for example. The peeling liquid supply nozzle 6 is movable between the center position and the retracted position by moving in the horizontal direction. When the peeling liquid supply nozzle 6 is at the center position, it is opposed to the rotational center position of the upper surface of the substrate W. When the peeling liquid supply nozzle 6 is located at the retracted position, it does not face the upper surface of the substrate W. A supply pipe 16 as a DIW of the first peeling liquid is connected to the peeling liquid supply nozzle 6. The supply pipe 16 is provided with valves 17, 18 for opening and closing its flow passage.

Further, a supply pipe 19 as an SC1 liquid of the second peeling liquid, that is, an aqueous solution of ammonia and hydrogen peroxide is further connected to the peeling liquid supply nozzle 6. The supply pipe 19 is connected to the downstream side of the supply pipe 16 from the valve 17, and further upstream than the valve 18. A valve 20 for opening and closing the flow path is interposed in the supply pipe 19.

The processing unit 2 includes: a processing cup 40 that receives liquid from the upper surface of the substrate W held by the rotating chuck 4 and a surface of the lower surface facing the substrate W; and a facing member 50 that is held from the top and held in the rotating clamp The substrate W of the disk 4 is opposed.

The processing cup 40 includes: a plurality of blocking members 41 that intercept the liquid scattered from the substrate W held by the rotating chuck 4 to the outside; a plurality of cups 42 that intercept the liquid guided downward by the plurality of blocking members 41; And a cylindrical outer wall member 43 that surrounds the plurality of retainers 41 and the plurality of cups 42. In the present embodiment, an example in which two anti-locks 41 (the first anti-block 41A and the second anti-block 41B) and two cups 42 (the first cup 42A and the second cup 42B) are provided are displayed.

Each of the first cup 42A and the second cup 42B has a groove shape that is open upward. The first guard 41A surrounds the rotating base 9. The second guard 41B surrounds the rotating base 9 on the radially outer side of the first guard 41A. The first cup 42A blocks the liquid guided downward by the first guard 41A. The second cup 42B is integrally formed with the first guard 41A, and intercepts the liquid guided to the lower side by the second guard 41B.

The processing unit 2 includes an anti-lifting and lowering mechanism 44 that elevates and lowers the first guard 41A and the second guard 41B, respectively. The anti-sliding mechanism 44 raises and lowers the first guard 41A between the lower position and the upper position. The anti-stop mechanism 44 raises and lowers the second guard 41B between the lower position and the upper position. The first guard 41A is located on the side of the substrate W in the entire range of the movable range between the upper position and the lower position. The second guard 41B is located on the side of the substrate W in the entire range of the movable range between the upper position and the lower position. The movable range includes an upper position and a lower position.

When both the first guard 41A and the second guard 41B are in the upper position, the liquid scattered from the substrate W is received by the first guard 41A. When the first guard 41A is in the lower position and the second guard 41B is in the upper position, the liquid scattered from the substrate W is received by the second guard 41B.

The anti-stop mechanism 44 includes, for example, a first ball screw mechanism (not shown) attached to the first guard 41A, and a first motor (not shown) that applies a driving force to the first ball screw mechanism; A ball screw mechanism (not shown) is attached to the second guard 41B and a second motor (not shown) that applies a driving force to the second ball screw mechanism.

The opposing member 50 is formed in a disk shape having a diameter substantially equal to or larger than the substrate W, and is disposed substantially horizontally above the rotating chuck 4. The opposing member 50 has an opposing surface 50a opposite to the upper surface of the substrate W.

A hollow shaft 51 is fixed to a surface of the opposing member 50 opposite to the opposing surface 50a. In the portion of the opposing member 50 that includes the position overlapping the rotation axis A1 in a plan view, a communication hole that vertically penetrates the opposing member 50 and communicates with the internal space of the hollow shaft 51 is formed.

The opposing member 50 blocks the gaseous environment in the space between the opposing surface 50a of the opposing member 50 and the upper surface of the substrate W from the gaseous environment outside the space. Therefore, the opposing member 50 is also referred to as a blocking plate.

The processing unit 2 further includes an opposing member lifting mechanism 52 that drives the lifting of the opposing member 50. The opposing member lifting and lowering mechanism 52 can position the opposing member 50 at any position (height) from the lower position (the position shown in FIG. 5H described later) to the upper position (the position shown in FIG. 5A to be described later). The lower position refers to a position where the opposing surface 50a of the opposing member 50 is closest to the substrate W in the movable range of the opposing member 50. The upper position refers to a position (retracted position) farthest from the substrate W in the opposing surface 50a of the opposing member 50 in the movable range of the opposing member 50. When the opposing member 50 is in the upper position, the processing liquid supply nozzle 5 and the peeling liquid supply nozzle 6 can enter between the opposing surface 50a of the opposing member 50 and the upper surface of the substrate W.

The opposing member lifting and lowering mechanism 52 includes, for example, a ball screw mechanism (not shown) attached to a supporting member (not shown) that supports the hollow shaft 51, and an electric motor (not shown) that imparts the ball screw mechanism to the ball screw mechanism. Driving force.

The processing unit 2 further includes a residue removing liquid supply nozzle 7 that supplies a residue removing liquid to the upper surface of the substrate W held by the rotating chuck 4, and a gas supply nozzle 60 that is held on the substrate W of the rotating chuck 4. The surface is supplied with a gas to the space between the opposing faces 50a of the opposing member 50, and the cleaning liquid supply nozzle 65 supplies the cleaning liquid to the upper surface of the substrate W held by the rotary chuck 4. The residue removal liquid supply nozzle 7 is an example of a residue removal liquid supply unit. The gas supply nozzle 60 is an example of a gas supply unit. The cleaning liquid supply nozzle 65 is an example of a cleaning liquid supply unit.

A residue removal liquid supply pipe 22 is connected to the residue removal liquid supply nozzle 7. The residue removal liquid supply pipe 22 is provided with a valve 23 for opening and closing the flow path in the residue removal liquid supply pipe 22. A gas supply pipe 61 is connected to the gas supply nozzle 60. A valve 62 that opens and closes a flow path in the gas supply pipe 61 is interposed in the gas supply pipe 61. A cleaning liquid supply pipe 66 is connected to the cleaning liquid supply nozzle 65. A valve 67 for opening and closing the flow path in the cleaning liquid supply pipe 66 is interposed in the cleaning liquid supply pipe 66.

The residue removal liquid supply nozzle 7, the gas supply nozzle 60, and the cleaning liquid supply nozzle 65 are collectively housed in the nozzle housing member 53 that is inserted into the hollow shaft 51. The discharge ports of the residue removal liquid supply nozzle 7, the gas supply nozzle 60, and the cleaning liquid supply nozzle 65 are exposed from the lower end portion of the nozzle housing member 53. The lower end portion of the nozzle accommodating member 53 faces the central portion of the upper surface of the substrate W held by the rotary chuck 4.

The processing unit 2 further includes a heat medium supply nozzle 24 that supplies a heat medium for heating the substrate W to the back surface (lower surface) of the substrate W held by the spin chuck 4. The heat medium supply nozzle 24 heats the substrate W held by the chuck pin 8 and the rotary base 9 from the back side of the substrate W, and is an example of a heating unit for forming a fine particle holding layer on the upper surface of the substrate W.

The heat medium supply nozzle 24 heats the processing liquid on the upper surface of the substrate W by supplying the heat medium to substantially the entire surface of the back surface of the substrate W. The heat medium supply nozzle 24 is inserted through the rotary shaft 10, and has a discharge port 24a facing the center of the back surface of the substrate W at the upper end. One example of thermal media is warm water.

In the present embodiment, the heat medium supply nozzle 24 supplies the heat medium from the discharge port 24a toward the center of the back surface of the substrate W in the rotated state. The supplied heat medium is spread over substantially the entire surface of the back surface of the substrate W due to the centrifugal force. Thereby, the substrate W and the processing liquid on the upper surface of the substrate W are heated. The center of rotation of the back surface of the substrate W is a position intersecting the rotation axis A1 of the back surface of the substrate W. A heat medium supply pipe 25 is connected to the heat medium supply nozzle 24. A valve 26 for opening and closing the flow path in the heat medium supply pipe 25 is interposed in the heat medium supply pipe 25.

Fig. 3 is a block diagram showing the electrical configuration of the main part of the substrate cleaning apparatus 1.

The substrate cleaning device 1 includes a controller 3. The controller 3 is provided with a microcomputer, and controls the control object provided in the substrate cleaning device 1 in accordance with a specific control program. Specifically, the controller 3 includes a processor (CPU) 3A and a memory 3B storing a control program, and is configured to execute various controls for substrate processing by executing a control program by the processor 3A.

In particular, the controller 3 is programmed to control the rotary motor 11, the first nozzle moving mechanism 12, the second nozzle moving mechanism 15, the opposing member lifting mechanism 52, the anti-lifting mechanism 44, and the valves 14, 17, 18, 20, 23 , 26, 62, 67.

4 is a flow chart for explaining an example of substrate cleaning of the processing unit 2. 5A to 5H are diagrams for explaining an example of a case where the substrate is washed. 6A and 6B are diagrams for explaining the state of the particle holding layer 29 of one example of the substrate cleaning.

In the substrate cleaning of the processing unit 2, first, a processing liquid supply step (step S1) is performed. In the processing liquid supply step, first, the controller 3 drives the rotary motor 11 to rotate the rotary base 9 to start the rotation of the substrate W. In the processing liquid supply step, the rotary base 9 is rotated at a substrate rotation speed, that is, a specific processing liquid supply speed. The processing liquid supply rate is, for example, 10 rpm to several 10 rpm. Further, the controller 3 controls the opposing member lifting and lowering mechanism 52 to arrange the opposing member 50 at the upper position. Next, the controller 3 controls the anti-lifting and lowering mechanism 44 to arrange the first anti-stop 41A and the second anti-lock 41B at the upper position.

Next, the controller 3 controls the first nozzle moving mechanism 12 to arrange the processing liquid supply nozzle 5 at a central position above the substrate W. And, the controller 3 opens the valve 14. Thereby, as shown in FIG. 5A, the processing liquid 27 is supplied from the processing liquid supply nozzle 5 toward the upper surface of the substrate W in the rotating state. The treatment liquid 27 supplied to the upper surface of the substrate W is spread over substantially the entire surface of the upper surface of the substrate W by the action of centrifugal force.

After the treatment liquid is supplied for a predetermined period of time, a film forming step of forming a fine particle-retaining layer on the upper surface of the substrate W is performed by solidifying or hardening the treatment liquid (step S2). In the film forming step, first, the controller 3 closes the valve 14 to stop the supply of the processing liquid 27 from the processing liquid supply nozzle 5. Further, the controller 3 moves the processing liquid supply nozzle 5 to the retracted position.

Next, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific erasing speed (the elimination step, step S2a). The removal speed is, for example, 300 rpm to 1500 rpm. As a result, as shown in FIG. 5B, first, the treatment liquid 27 supplied to the upper surface of the substrate W is discharged from the periphery of the upper surface of the substrate W, and then the volatilization of the volatile solvent proceeds.

Next, the controller 3 controls the opposing member lifting mechanism 52 to move the opposing member 50 from the upper position toward the lower position. The controller 3 opens the valve 62. Thereby, a gas such as nitrogen (N ₂ ) gas is supplied from the gas supply nozzle 60 to a space between the opposing surface 50a of the opposing member 50 and the upper surface of the substrate W. Next, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific heating speed. The heating speed is, for example, 100 rpm to 1500 rpm. After the opposing member 50 reaches the lower position, the controller 3 opens the valve 26. Thereby, as shown in FIG. 5C, the heat medium 28 is supplied from the heat medium supply nozzle 24 toward the back surface of the substrate W in the rotated state.

The supplied heat medium 28 spreads over substantially the entire surface of the back surface of the substrate W due to the centrifugal force. Thereby, the substrate W and the processing liquid 27 on the upper surface of the substrate W are heated (heating step, step S2b).

Then, the volatilization of the volatile solvent proceeds, and the treatment liquid 27 is cured or hardened. Thereby, a solid film containing a solute component, that is, a particle holding layer 29, is formed. Further, as shown in FIG. 6A, when the fine particle holding layer 29 is formed, the fine particles 30 adhering to the upper surface of the substrate W are separated from the substrate W and held in the fine particle holding layer 29.

Here, "curing" means that, for example, the solute is solidified by a force acting between molecules or between atoms due to volatilization of a solvent. "Curing" means that, for example, a solute is solidified by chemical changes such as polymerization or crosslinking. Therefore, "cure or harden" means that the solute solidifies due to various reasons. Further, the treatment liquid is only required to be cured or hardened to such an extent that the particles 30 can be retained, and it is not necessary to completely evaporate the solvent. Further, the "solute component" forming the fine particle-retaining layer 29 may be the solute itself contained in the treatment liquid 27, or may be derived from the solute, and may be obtained as a result of chemical change, for example.

As the solute, various resins which can be formed into the fine particle holding layer 29 in a state in which the fine particles 30 adhering to the upper surface of the substrate W can be separated from the substrate W and can be dissolved in any solvent and can be cured or cured can be used.

For example, in the present embodiment, as the solute, a resin having a property of being insoluble or insoluble in water before being heated to a specific deterioration temperature or higher and having a property of being water-soluble by heating to a temperature higher than the deterioration temperature can be used (hereinafter It is described as "sensible water-soluble resin"). The above-described cleaning method according to an embodiment of the present invention is carried out by combining a thermosensitive water-soluble resin with a water-based peeling liquid to be described later.

As a specific example of the sensible water-soluble resin, for example, a resin which is decomposed by heating to a specific deterioration temperature or higher (for example, 200° C. or higher), and which exhibits a water-soluble resin, is exposed.

In the present embodiment, in the film forming step, the surface of the substrate W is not deteriorated by heating the treatment liquid to a temperature at which the deterioration temperature of the heat-sensitive water-soluble resin is not reached, so that the heat-sensitive water-soluble resin is not deteriorated to be water-soluble. An insoluble fine particle-retaining layer 29 which is insoluble or insoluble in the aqueous stripping liquid is formed.

In order to heat the treatment liquid to a temperature that does not reach the deterioration temperature of the thermosensitive water-soluble resin, a heat medium having a boiling point not reaching the deterioration temperature may be used as the heat medium. For example, as the thermosensitive water-soluble resin having a deterioration temperature of 180 ° C, for example, DIW (boiling point: 100 ° C) or the like can be used as the heat medium.

Further, the temperature of the heating is further preferably a temperature which does not reach the boiling point of the solvent. The solvent can be left in the particulate retaining layer 29 by heating the treatment liquid to a temperature that does not reach the boiling point of the solvent, as described above. Further, the fine particle holding layer 29 can be easily peeled off from the upper surface of the substrate W by the solvent remaining in the fine particle holding layer 29 and the interaction with the peeling liquid.

As described above, the sensible water-soluble resin is deteriorated to be water-soluble when heated to a temperature higher than the deterioration temperature. For example, the prior method described in the specification of the Japanese Patent Publication No. 2014-197717, and the specification of the US Patent Application Publication No. 2015/128994 can also be used. However, in the embodiment, the heat-sensitive water-soluble resin is intentionally stopped from heating at a temperature that does not reach the deterioration temperature, and the fine particle-retaining layer 29 is formed in a state of maintaining poor solubility or insoluble in the aqueous stripping liquid. Therefore, the particle holding layer 29 in the state of maintaining the block can be removed from the substrate W without removing the particles 30 from the particle holding layer 29. Therefore, the particles 30 can be removed with a high removal rate.

Further, in the present embodiment, the heating temperature can be set to a low temperature which is less than the deterioration temperature as compared with the prior art. Therefore, the energy consumption in carrying out the washing method can be further reduced. In detail, since the heating temperature of the fine particle holding layer 29 only needs to be heated up to 100 ° C, DIW can be used as the heating medium for heating the substrate W. On the other hand, unlike the present embodiment, in the configuration in which the fine particle-retaining layer 29 is heated to 100 ° C or higher, it is necessary to use a liquid which does not vaporize at a high temperature as a heating medium (for example, a liquid having a boiling point higher than 100 ° C). ). Therefore, since the heating temperature can be set to a temperature that does not reach the deterioration temperature, it is possible to heat the substrate W in a safe and simple configuration.

As the solvent, a solvent which is soluble and volatile with respect to the sensible water-soluble resin before the deterioration can be used. Here, "having a volatile" means having a higher volatility than water. As the solvent, for example, PGEE (Propylene Glycol Ethyl Ether: propylene glycol ethyl ether) can be used.

The heating (heating step) of the substrate W using such a heat medium 28 is as described above such that the opposing surface 50a of the opposing member 50 is in a state close to the upper surface of the substrate W (for example, the opposing member 50 is positioned at the lower position) Status) proceed.

The heat medium 28 supplied to the back surface of the substrate W is spread over the entire surface of the back surface of the substrate W, and is scattered outside the substrate W by centrifugal force. The heat medium 28 scattered outside the substrate W is blocked by the first guard 41A. A portion of the heat medium 28 blocked by the first guard 41A will bounce from the first guard 41A.

On the other hand, in the present embodiment, the heating step is performed in a state where the opposing surface 50a of the opposing member 50 is brought close to the upper surface of the substrate W. The opposing member 50 protects the upper surface of the substrate W from the heat medium 28 that bounces from the first guard 41A. Therefore, since the adhesion of the heat medium 28 to the surface of the fine particle holding layer 29 can be suppressed, the particles caused by the bounce of the heat medium 28 from the first guard 41A can be suppressed.

Further, in the present embodiment, as described above, the gas is supplied from the gas supply nozzle 60 to the space between the opposing surface 50a of the opposing member 50 and the upper surface of the substrate W. The gas supplied to the space between the opposing surface 50a of the opposing member 50 and the upper surface of the substrate W forms a gas flow moving from the central portion of the upper surface of the substrate W toward the periphery of the upper surface of the substrate W. The heat medium 28 that has bounced from the first guard 41A can be pushed back to the first guard 41A by forming an air flow moving from the central region of the upper surface of the substrate W toward the peripheral surface of the upper surface of the substrate W. Therefore, adhesion of the heat medium 28 to the surface of the particle holding layer 29 can be further suppressed.

The gas supplied to the space between the opposing surface 50a of the opposing member 50 and the upper surface of the substrate W is not limited to nitrogen gas. The gas supplied to the space between the opposing surface 50a of the opposing member 50 and the upper surface of the substrate W is preferably an inert gas, and may be an inert gas other than nitrogen. The inert gas is a gas inert to the upper surface and pattern of the substrate W, and may be a rare gas such as argon.

After heating for a certain period of time, the controller 3 closes the valve 26 to stop the supply of the heat medium from the heat medium supply nozzle 24. Then, a removal step of peeling off the surface from the upper surface of the substrate W and removing the particle holding layer 29 is performed (step S3).

That is, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific removal speed. The removal speed is, for example, 500 rpm to 800 rpm.

The controller 3 controls the opposing member lifting and lowering mechanism 52 to arrange the opposing member 50 at the upper position. Controller 3 then closes valve 62. Thereby, the supply of the gas from the gas supply nozzle 60 is stopped. Then, the controller 3 controls the second nozzle moving mechanism 15 to arrange the peeling liquid supply nozzle 6 at a central position above the substrate W. Further, the controller 3 opens the valves 17 and 18 while maintaining the state in which the valve 20 is closed. As a result, as shown in FIG. 5D, the DIW 31 as the first peeling liquid is supplied from the peeling liquid supply nozzle 6 toward the upper surface of the substrate W in the rotated state (DIW supply step, step S3a). The DIW 31 supplied to the upper surface of the substrate W is spread over the substantially entire surface of the upper surface of the substrate W by the centrifugal force, and is discharged from the periphery of the upper surface of the substrate W.

Next, the controller 3 closes the valve 17 while rotating the rotary base 9 while maintaining the substrate rotation speed at the removal speed, and stops the supply of the DIW, and then opens the valve 20. As a result, as shown in FIG. 5E, the SC1 liquid 32 as an example of the second peeling liquid is supplied from the peeling liquid supply nozzle 6 to the upper surface of the substrate W in the rotated state (SC1 liquid supply step, step S3b). The SC1 liquid 32 supplied to the upper surface of the substrate W is distributed over the substantially entire surface of the upper surface of the substrate W by the centrifugal force instead of the DIW 31, and the SC1 liquid 32 is discharged from the periphery of the upper surface of the substrate W.

Both DIW31 and SC1 liquid 32 (hereinafter sometimes referred to as "peeling liquid") have compatibility with PGEE as a solvent. Further, the heat-sensitive water-soluble resin is heated to the non-deterioration temperature to form the fine particle-retaining layer 29 as described above, and is insoluble or insoluble in the water-based stripping liquid, that is, DIW31 or SC1 liquid 32. Therefore, the stripping liquid does not need to dissolve the solute component forming the fine particle holding layer 29, that is, it penetrates into the fine particle holding layer 29 by the interaction with the PGEE remaining in the fine particle holding layer 29. Further, the stripping liquid reaches the interface with the substrate W. Thereby, as shown in FIG. 6B, the fine particle holding layer 29 holding the fine particles 30 floats from the upper surface of the substrate W and is peeled off.

The fine particle holding layer 29 peeled off from the upper surface of the substrate W is discharged from the peripheral edge of the upper surface of the substrate W together with the peeling liquid by the centrifugal force of the rotation of the substrate W. That is, the peeled-out particle holding layer 29 is removed from the upper surface of the substrate W.

The effect of DIW31 as a stripping solution is lower than that of SC1 liquid 32. However, at least a part of the PGEE remaining in the fine particle holding layer 29 is replaced by the DIW 31 being supplied to the fine particle holding layer 29 before being supplied to the SC1 liquid 32. Further, the DIW 31 serves to assist the SC1 liquid 32 supplied in the next step to permeate into the fine particle holding layer 29.

Therefore, as the stripping liquid, it is preferable to supply the DIW 31 before supplying the SC1 liquid 32, but the supply step of the DIW 31 may be omitted (step S3a). That is, as the stripping liquid, only the SC1 liquid can be used.

The first peeling liquid is not limited to DIW31, and may be any of carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm). The second stripping liquid is not limited to the SC1 liquid 32, and an aqueous alkaline solution such as an aqueous ammonia solution or a four-stage ammonium hydroxide such as tetramethylammonium hydroxide or a choline aqueous solution may be used.

Next, the controller 3 closes the valve 18 and the valve 20, stops the supply of the SC1 liquid, and then moves the peeling liquid supply nozzle 6 to the retracted position. Further, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific cleaning speed. The washing speed is, for example, 100 rpm to 1000 rpm.

Next, the controller 3 controls the opposing member lifting mechanism 52 to move the opposing member 50 from the upper position to the supply position between the upper position and the lower position. Then, the controller 3 opens the valve 67. As a result, as shown in FIG. 5F, the DIW 31 is supplied from the cleaning liquid supply nozzle 65 as a cleaning liquid toward the upper surface of the substrate W in the rotated state (cleaning step, step S4).

The supply of the cleaning liquid from the cleaning liquid supply nozzle 65 is started, for example, after moving to the supply position. The supply of the cleaning liquid from the cleaning liquid supply nozzle 65 may be started at the time when the opposing member 50 is at the upper position, or may be started when the opposing member 50 is moved from the upper position to the supply position.

The cleaning liquid is not limited to DIW31, and may be any of carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm).

The supplied DIW 31 spreads over substantially the entire surface of the upper surface of the substrate W by the centrifugal force, and thereafter is discharged from the periphery of the upper surface of the substrate W. Thereby, the SC1 liquid 32 remaining on the upper surface of the substrate W is washed from the upper surface of the substrate W. Further, for example, even if a portion of the particle holding layer 29 peeled off from the upper surface of the substrate W in the previous step is not removed and remains, it can be washed from the upper surface of the substrate W by the DIW 31.

However, for example, the conditions of the supply step (step S3a) of the previous DIW 31 and the supply step (step S3b) of the SC1 liquid 32 may be adjusted, and in these two steps, the particle retention is sufficiently removed from the upper surface of the substrate W. Layer 29. In this case, the supply step of the DIW 31 (step S4) may also be omitted.

Next, the controller 3 closes the valve 67 to stop the supply of the DIW 31 from the cleaning liquid supply nozzle 65.

Next, a residue removing step of removing the residue remaining on the upper surface of the substrate W after removing the fine particle holding layer 29 is performed (step S5).

That is, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific residue removal speed. The residue removal rate is, for example, several 10 rpm to 300 rpm. The position of the opposing member 50 is maintained at the supply position. Further, the anti-stop mechanism 44 moves the first guard 41A to the lower position and the second guard 41B to the upper position.

Next, the controller 3 opens the valve 23. As a result, as shown in FIG. 5G, the residue removal liquid 33 is supplied from the residue removal liquid supply nozzle 7 toward the upper surface of the substrate W in the rotated state.

The residue removing liquid 33 supplied to the upper surface of the substrate W is distributed over the entire surface of the upper surface of the substrate W by the centrifugal force instead of the DIW 31. Then, the residue removal liquid 33 supplied to the upper surface of the substrate W dissolves the residue remaining on the surface of the substrate W on the upper surface of the substrate W, and then is discharged from the periphery of the upper surface of the substrate W.

As the residue removing liquid 33, a solvent having solubility in the sensible aqueous solution resin before the deterioration can be used. As the solvent, for example, isopropyl alcohol (IPA) can be used. Since IPA has compatibility with water, it can smoothly replace the DIW as a cleaning liquid remaining on the upper surface of the substrate W at the start of the residue removal step. Furthermore, since IPA is volatile, it is quickly removed from the upper surface of the substrate after the residue removal step.

Next, the controller 3 closes the valve 23 to stop the supply of the residue removal liquid 33 from the residue removal liquid supply nozzle 7. Next, the controller 3 controls the opposing member lifting mechanism 52 to move the opposing member 50 from the supply position to the lower position. Next, the controller 3 opens the valve 60 to start the supply of the gas from the gas supply nozzle 60. Next, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific rotational drying speed (step S6). The spin drying speed is, for example, 500 rpm to 1500 rpm. The supply of gas from the gas supply nozzle 60 is started, and the change in the rotational speed of the substrate is performed, for example.

The centrifugal force is applied to the residue removing liquid 33 by the rotation of the substrate W. As shown in Fig. 5H, the residue removing liquid 33 is discharged from the periphery of the upper surface of the substrate W, and is volatilized from the upper surface of the substrate W to be removed. A series of washing steps are terminated by performing spin drying. Subsequently, the controller 3 closes the valve 62 to stop the supply of gas from the gas supply nozzle 60.

Further, as the solute contained in the treatment liquid, in addition to the thermosensitive water-soluble resin, for example, an acrylic resin, a phenol resin, an epoxy resin, a melamine resin, a urea resin, an unsaturated polyester resin, an alkyd resin, a polyurethane, or the like may be used. Polyimine, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polyvinyl acetate, polytetrafluoroethylene, acrylonitrile-butadiene-styrene resin, acrylonitrile-styrene, polyamine, Polyacetal, polycarbonate, polyvinyl alcohol, modified polyphenylene ether, polybutylene terephthalate, polyethylene terephthalate, polyphenylene sulfide, polyfluorene, polyetheretherketone, poly Amidoxime-quinone imine and the like.

As the solvent, any solvent which can dissolve any of the resins to form a treatment liquid can be used. It is especially preferable to use a solvent compatible with the stripping solution.

In the case of any of the resins, as the peeling liquid, water such as DIW or a water-based peeling liquid such as an alkaline aqueous solution can be used.

As the residue removing liquid, any solvent having solubility in any of the resins can be used. As the residue removing liquid, for example, an organic solvent such as a diluent, toluene, an acetate, an alcohol or a glycol, or an acidic liquid such as acetic acid, formic acid or glycolic acid can be used. It is especially preferred to use a solvent compatible with the aqueous stripping solution.

FIG. 7 is a graph showing the results of measuring the number of residues of the fine particle-retaining layer remaining on the upper surface of the substrate when the fine particles of SiO _{2 are} attached to the Si substrate and the substrate is cleaned. The number of cases in which the residue removal step is omitted in each step of the substrate cleaning shown in FIG. 4 and the case where the residue removal steps of 10 seconds, 20 seconds, and 30 seconds are performed are sequentially indicated from the left.

As a result of the determination of FIG. 7, it is determined that the residue of the fine particle-retaining layer remains or reattaches to the upper surface of the substrate W by performing the residue removal step.

Fig. 8 is a graph showing the results of the particle removal rate (PRE) when the particles of SiO _{2 are} attached to the Si substrate and the substrate is washed.

In the figure, the left side shows the steps of performing the steps of cleaning the substrate shown in Fig. 4, that is, the PRE-related PR of the specific particle diameter or more after the residue removal. Further, the right side indicates the PRE-related PRE of the specific particle diameter or more in the case where the residue removal step is omitted in the substrate cleaning step.

A higher PRE is obtained in either case. From this result, it was judged that the fine particles released in the residue removal step were extremely small and hardly adhered to the upper surface of the substrate. Therefore, even if the residue removal step was carried out, there was no possibility of a decrease in the PRE. <Second embodiment>

Fig. 9 is a schematic cross-sectional view showing a schematic configuration of a processing unit 2P according to a second embodiment of the present invention. In FIG. 9, the same members as those described so far are denoted by the same reference numerals, and the description thereof is omitted (the same applies to FIGS. 10 to 12B which will be described later).

Referring to Fig. 9, the processing unit 2P is mainly different from the processing unit 2 (see Fig. 2) of the first embodiment in that the processing unit 2P of the second embodiment replaces the opposing member 50, the residue removing liquid supply nozzle 7, and the gas supply. The nozzle 60 and the cleaning liquid supply nozzle 65 include a moving nozzle 70 and a heater unit 100.

The moving nozzle 70 is a nozzle that is movable at least in the horizontal direction. The moving nozzle 70 has a function as a residue removing liquid supply unit that supplies the residue removing liquid to the upper surface of the substrate W, and a function as a gas supply unit that supplies a gas such as nitrogen gas to the upper surface of the substrate W.

The moving nozzle 70 is moved by, for example, the horizontal direction (the direction perpendicular to the rotation axis A1) by the third nozzle moving mechanism 80. By moving in the horizontal direction, the moving nozzle 70 can be moved between the center position and the retracted position. When the moving nozzle 70 is at the center position, it is opposite to the center of rotation of the upper surface of the substrate W. When the moving nozzle 70 is at the retracted position, it does not face the upper surface of the substrate W. The retracted position that does not face the upper surface of the substrate W is the position on the outer side of the rotating base 9 in a plan view.

A residue removal liquid supply pipe 71, a first gas supply pipe 72A, a second gas supply pipe 72B, and a third gas supply pipe 72C are connected to the moving nozzle 70. The residue removal liquid supply pipe 71 is provided with a valve 73 that opens and closes its flow path. Valves 74A, 74B, and 74C that open and close their flow passages are respectively disposed in the gas supply pipes 72A, 72B, and 72C.

The moving nozzle 70 has a center discharge port 90 that discharges the residue removing liquid supplied from the residue removing liquid supply pipe 71 in the vertical direction. The moving nozzle 70 has a linear flow ejection port 91 that linearly ejects the gas supplied from the first gas supply pipe 72A in the vertical direction. In addition, the moving nozzle 70 has a horizontal flow discharge port 92 that radially discharges the gas supplied from the second gas supply pipe 72B toward the periphery of the moving nozzle 70 in the horizontal direction. Further, the moving nozzle 70 has an inclined flow ejection port 93 that discharges the gas supplied from the third gas supply pipe 72C radially downward toward the periphery of the moving nozzle 70.

A mass flow controller 75 for accurately adjusting the flow rate of the gas flowing through the first gas supply pipe 72A is interposed in the first gas supply pipe 72A. The mass flow controller 75 has a flow control valve. Further, a flow rate variable valve 76B for regulating the flow rate of the gas flowing through the second gas supply pipe 72B is interposed in the second gas supply pipe 72B. Further, a flow rate variable valve 76C for regulating the flow rate of the gas flowing through the third gas supply pipe 72C is interposed in the third gas supply pipe 72C. Further, filters 77A, 77B, and 77C for removing foreign matter are interposed in the gas supply pipes 72A, 72B, and 72C, respectively.

The plurality of chuck pins 8 of the embodiment can be opened and closed between a closed state in which the substrate W is held in contact with the peripheral end of the substrate W and an open state in which the peripheral end of the substrate W is retracted. Further, in the open state, the plurality of chuck pins 8 are separated from the peripheral end of the substrate W and released, and the substrate W is supported from below by contacting the lower surface of the peripheral portion of the substrate W. The processing unit 2P further includes a chuck pin driving mechanism 108 that drives and opens and closes the plurality of chuck pins 8. The chuck pin drive mechanism 108 includes, for example, a link mechanism 109 that is built in the rotary base 9 and a drive source 110 that is disposed outside the rotary base 9. The drive source 110 includes, for example, a screw mechanism and an electric motor that imparts a driving force thereto.

The heater unit 100 has a form of a disk-shaped heating plate. The heater unit 100 has an opposite surface 100a opposed to the lower surface of the substrate W from below.

The heater unit 100 includes a plate body 101, a plurality of support pins 102, and a heater 103. The board body 101 is slightly smaller than the substrate W in plan view. A plurality of support pins 102 protrude from the upper surface of the board body 101. The opposing surface 100a is formed by the upper surface of the plate body 101 and the surface of the plurality of support pins 102. The heater 103 may also be a resistor built in the board body 101. The opposing surface 100a is heated by energizing the heater 103. Further, the heater 103 supplies electric power from the heater energizing mechanism 105 via the power supply line 104.

The heater unit 100 is disposed above the rotating base 9. The processing unit 2P includes a heater elevating mechanism 106 that elevates and lowers the heater unit 100 relative to the rotating base 9. The heater elevating mechanism 106 includes, for example, a screw mechanism and an electric motor that imparts a driving force thereto.

On the lower surface of the heater unit 100, an elevating shaft 107 extending in the vertical direction along the rotation axis A1 is coupled. The lifting shaft 107 is inserted through a through hole 9a formed in a central portion of the rotating base 9, and a hollow rotating shaft 10. A power supply line 104 is passed through the lifting shaft 107.

The heater elevating mechanism 106 raises and lowers the heater unit 100 via the elevating shaft 107, whereby the heater unit 100 can be disposed at any intermediate position between the lower position and the upper position. When the heater unit 100 is in the lower position, the distance between the opposing surface 100a and the lower surface of the substrate W is, for example, 15 mm. When the heater unit 100 is moved from the lower position to the upper position, the opposite surface 100a is in contact with the lower surface of the substrate W before the heater unit 100 reaches the upper position.

The position of the heater unit 100 when the opposing surface 100a of the heater unit 100 abuts against the lower surface of the substrate W is referred to as an abutting position. When the plurality of chuck pins 8 are in the open state, the heater unit 100 can be moved to be above the abutting position. When the heater unit 100 is located above the abutting position, the substrate W is topped up by the heater unit 100. When the heater unit 100 is located above the abutting position or at the abutting position, the substrate W is heated in a contact state.

When the heater unit 100 is located below the abutting position, the substrate W is heated by the radiant heat from the opposing surface 100a. The closer the heater unit 100 is to the substrate W, the stronger the heating of the substrate W is. The heat medium supply nozzle 24 of the processing unit 2P is inserted into the hollow lifting shaft 107 and further penetrates the heater unit 100.

Fig. 10 is a block diagram showing the electrical configuration of the processing unit 2P of the second embodiment. Similarly to the first embodiment, the controller 3 of the processing unit 2P of the second embodiment includes a processor (CPU) 3A and a memory 3B storing a control program, and is executed by the processor 3A executing a control program. To control various controls of substrate processing. The controller 3 is programmed to control the rotary motor 11, the chuck pin drive mechanism 108, the nozzle moving mechanism 12, 15, 80, the heater energizing mechanism 105, the heater lifting mechanism 106, the anti-lifting mechanism 44, and the valve class 14, 17, 18, 20, 26, 73, 74A, 74B, 74C, 75, 76B, 76C.

The processing unit 2P of the second embodiment can perform the same substrate cleaning as the processing unit 2 of the first embodiment (see FIG. 4). However, since the behavior of each member in the substrate cleaning of the processing unit 2P of the second embodiment is different from the behavior of each member in the processing unit 2 of the first embodiment, the second embodiment is used with reference to FIGS. 11A to 11H. Details of the substrate cleaning of the processing unit 2P of the form will be described. 11A to 11H are diagrams for explaining an example of a case where the substrate of the processing unit 2P is washed. At the start of the substrate processing, the controller 3 controls the heater elevating mechanism 106 to arrange the heater unit 100 at the lower position.

In the substrate cleaning by the processing unit 2, first, the processing liquid supply step is performed (step S1). In the processing liquid supply step, first, the controller 3 drives the rotary motor 11 to rotate the rotary base 9 to start the rotation of the substrate W. In the processing liquid supply step, the rotary base 9 is rotated at a substrate rotation speed, that is, a specific processing liquid supply speed. The processing liquid supply rate is, for example, 10 rpm to several 10 rpm.

Next, the controller 3 controls the first nozzle moving mechanism 12 to arrange the processing liquid supply nozzle 5 at a central position above the substrate W. Next, the controller 3 opens the valve 14. Thereby, as shown in FIG. 11A, the processing liquid 27 is supplied from the processing liquid supply nozzle 5 toward the upper surface of the substrate W in the rotating state. The treatment liquid 27 supplied to the upper surface of the substrate W is spread over substantially the entire surface of the upper surface of the substrate W by the action of centrifugal force.

After the treatment liquid is supplied for a predetermined period of time, a film forming step of solidifying or hardening the treatment liquid to form a fine particle-retaining layer on the upper surface of the substrate W is performed (step S2). In the film forming step, first, the controller 3 closes the valve 14 to stop the supply of the processing liquid 27 from the processing liquid supply nozzle 5. Next, the controller 3 moves the processing liquid supply nozzle 5 to the retracted position.

When the supply of the processing liquid 27 from the processing liquid supply nozzle 5 is stopped, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific erasing speed (the elimination step, step S2a). The removal speed is, for example, 300 rpm to 1500 rpm. Thereby, as shown in FIG. 11B, first, the treatment liquid 27 supplied to the upper surface of the substrate W is discharged from the periphery of the upper surface of the substrate W, and then the volatilization of the volatile solvent progresses.

Next, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific heating speed. The heating speed is, for example, 100 rpm to 1500 rpm. Further, as shown in FIG. 11C, the controller 3 controls the heater elevating mechanism 106 to raise the heater unit 100 from the lower position, and arranges the heater unit 100 at a lower position closer to the substrate W. Thereby, the heating of the substrate W by the heater unit 100 is enhanced (heating step, step S2b). When the heater unit 100 is in the approximate position, the opposite surface 100a is separated from the lower surface of the substrate W by a specific distance (for example, 4 mm).

The rotation speed of the substrate W is changed to the speed at the time of heating and the heater unit 100 is moved to the approach position, and for example, it can be simultaneously started.

Then, the volatilization of the functional solvent progresses, and the treatment liquid 27 is cured or hardened. Thereby, a solid film containing a solute component, that is, a particle holding layer 29, is formed.

After heating for a certain period of time, a removal step of peeling off the surface from the upper surface of the substrate W and removing the particle holding layer 29 is performed (step S3).

In detail, the controller 3 controls the heater elevating mechanism 106 to move the heater unit 100 from the approaching position to the lower position. Next, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific removal speed. The removal speed is, for example, 500 rpm to 800 rpm. Next, the controller 3 controls the second nozzle moving mechanism 15 to move the peeling liquid supply nozzle 6 to a central position above the substrate W.

After the peeling liquid supply nozzle 6 reaches the center position above the substrate W, the controller 3 opens the valves 17 and 18 while maintaining the valve 20 closed. As a result, as shown in FIG. 11D, the DIW 31 as the first peeling liquid is supplied from the peeling liquid supply nozzle 6 toward the upper surface of the substrate W in the rotated state (DIW supply step, step S3a). The DIW 31 supplied to the upper surface of the substrate W is spread over the substantially entire surface of the upper surface of the substrate W by the centrifugal force, and is discharged from the periphery of the upper surface of the substrate W.

The rotation speed of the substrate W is changed to the removal speed, the peeling liquid supply nozzle 6 is moved to the center position, and the heater unit 100 is moved downward, and the simultaneous start can be started.

Next, the controller 3 maintains the rotation speed of the substrate at the removal speed and rotates the rotary base 9, and closes the valve 17 to stop the supply of DIW, and then opens the valve 20. As a result, as shown in FIG. 11E, the SC1 liquid 32 as an example of the second peeling liquid is supplied from the peeling liquid supply nozzle 6 to the upper surface of the substrate W in the rotated state (SC1 liquid supply step, step S3b). The SC1 liquid 32 supplied to the upper surface of the substrate W is distributed over the entire surface of the upper surface of the substrate W by the centrifugal force instead of the DIW 31, and is discharged from the periphery of the upper surface of the substrate W.

The fine particle holding layer 29 peeled off from the upper surface of the substrate W is discharged from the peripheral edge of the upper surface of the substrate W together with the peeling liquid by the centrifugal force of the rotation of the substrate W. That is, the peeled fine particle holding layer 29 is removed from the upper surface of the substrate W.

Next, after the valve 20 is closed and the supply of the SC1 liquid is stopped, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific cleaning speed. The washing speed is, for example, 100 rpm to 1000 rpm. Next, the controller 3 opens the valve 17. As a result, as shown in FIG. 11F, the DIW 31 as the cleaning liquid is supplied from the peeling liquid supply nozzle 6 toward the upper surface of the substrate W in the rotated state (cleaning step, step S4).

The supplied DIW 31 is spread over the entire surface of the upper surface of the substrate W by the action of centrifugal force, and is discharged from the periphery of the upper surface of the substrate W. Thereby, the SC1 liquid 32 remaining on the upper surface of the substrate W is washed from the upper surface of the substrate W. Further, for example, even if a portion of the fine particle holding layer 29 peeled off from the upper surface of the substrate W in the previous step is not removed and remains, it can be washed from the upper surface of the substrate W by the DIW 31.

However, for example, the conditions of the supply step (step S3a) of the previous DIW 31 and the supply step (step S3b) of the SC1 liquid 32 may be adjusted, and in the two steps, the surface is sufficiently removed from the upper surface of the substrate W. The layer 29 is maintained. In this case, the supply step of the DIW 31 can be omitted (step S4).

Next, a residue removing step of removing the residue remaining on the upper surface of the substrate W after removing the fine particle holding layer 29 is performed (step S5).

That is, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific residue removal speed. The residue removal rate is, for example, several 10 rpm to 300 rpm.

Next, the controller 3 controls the heater elevating mechanism 106 to move the heater unit 100 from the lower position to the approach position. The controller 3 closes the valves 17, 18 to stop the supply of the DIW from the stripping liquid supply nozzle 6. Next, the controller 3 controls the second nozzle moving mechanism 15 to move the peeling liquid supply nozzle 6 to the retracted position.

The rotation speed of the substrate W is changed to the removal speed, the peeling liquid supply nozzle 6 is moved to the retracted position, and the heater unit 100 is moved to the approach position, and can be simultaneously started.

Next, the controller 3 controls the third nozzle moving mechanism 80 to arrange the moving nozzle 70 at a central position above the substrate W. When the moving nozzle 70 reaches the center position, the controller 3 opens the valve 73. Thereby, as shown in FIG. 11G, the residue removing liquid 33 is supplied from the moving nozzle 70 toward the upper surface of the substrate W in the rotated state.

The residue removal liquid 33 supplied to the upper surface of the substrate W is distributed over the substantially entire surface of the upper surface of the substrate W by the centrifugal force instead of the DIW 31. Then, the residue removing liquid 33 supplied to the upper surface of the substrate W is discharged from the periphery of the upper surface of the substrate W by dissolving the residue of the fine particle holding layer 29 remaining on the upper surface of the substrate W.

Further, the controller 3 opens the valve 74B. Thereby, a gas such as nitrogen gas is radially ejected from the horizontal flow discharge port 92 of the moving nozzle 70, and the upper surface of the substrate W is covered with the horizontal airflow 95. The discharge flow rate of nitrogen gas from the horizontal flow discharge port 92 is, for example, about 100 liters/min. Since the upper surface of the substrate W is covered by the horizontal flow of nitrogen gas, it is possible to suppress or prevent the droplets from the respective members in the processing unit 2P from rising from the surface of the substrate W and the mist in the gas atmosphere.

Next, the controller 3 closes the valve 73 to stop the supply of the residue removing liquid 33 from the moving nozzle 70. Thereafter, the controller 3 controls the third nozzle moving mechanism 80 so that the moving nozzle 70 approaches the upper surface of the substrate W. In this state, the controller 3 opens the valve 74A, and blows the linear airflow 96 of the gas from the linear flow ejection port 91 toward the center of the substrate W at, for example, 15 liters/min. Next, the controller 3 controls the heater elevating mechanism 106 to move the heater unit 100 from the approaching position to the lower position. Next, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific rotational drying speed (step S6). The spin drying speed is, for example, 800 rpm.

The centrifugal force is applied to the residue removing liquid 33 by the rotation of the substrate W. As shown in Fig. 11H, the residue removing liquid 33 is discharged from the periphery of the upper surface of the substrate W, and is volatilized from the upper surface of the substrate W to be removed. A series of washing steps are terminated by performing spin drying.

When the residue removing liquid 33 is removed from the substrate W, the controller 3 can also open the valve 74C as shown by the two-dot chain line in FIG. 11H, and the gas can be ejected from the inclined flow ejection port 93. The inclined air current 97 formed by the air current ejected from the inclined flow ejection port 93 collides with the upper surface of the substrate W, and is changed in direction to be parallel to the outer surface of the substrate W.

Thereafter, the controller 3 closes the valves 74A, 74B to stop the supply of gas from the moving nozzles 70.

After the residue removal step and before the spin drying step, as shown in FIGS. 12A and 12B, when the residue removal liquid 33 is removed from the substrate W, a hole 160 may be formed in the central portion of the liquid film of the residue removal liquid 33, The residue removal liquid 33 is removed from the substrate W so as to enlarge the hole 160.

Specifically, referring to FIG. 12A, the linear flow 96 is vertically sprayed from the linear flow ejection port 91 toward the center of the substrate W, and the hole 160 is formed in the central portion of the liquid film of the residue removal liquid 33 (opening step) ). Referring to FIG. 12B, the linear airflow 96 collides with the upper surface of the substrate W, and its direction is changed to be parallel to the outer surface of the substrate W. Therefore, the hole 160 is expanded toward the outer periphery of the substrate W by at least one of the blowing force of the linear airflow 96 and the centrifugal force generated by the rotation of the substrate W (reaming step). The residue removal liquid 33 is removed to the outside of the substrate W by moving the liquid film of the residue removal liquid 33. In the opening step and the reaming step, the heater unit 100 may be located at the lower position (the position shown by the solid line in FIGS. 12A and 12B), or may be located at the close position (the two-point chain in FIGS. 12A and 12B) The position shown by the line).

Although the embodiments of the present invention have been described above, the present invention may be embodied in other forms.

For example, in order to heat the treatment liquid, instead of supplying the heat medium 28 to the back surface of the substrate W, heat from a heat source such as a lamp or an electric heater may be used. The heating of the substrate W can be carried out in a dedicated chamber. Further, the steps of film formation, peeling, and residue removal of the fine particle holding layer 29 can be carried out in different chambers.

The treatment liquid, the peeling liquid, and the residue removal liquid can be supplied to substantially the entire surface of the upper surface of the substrate W at substantially the same time from a plurality of nozzle holes arranged in a line.

Other steps may be added to the steps of the method of cleaning the substrate cleaning apparatus 1 and the steps shown in the embodiment.

As the solute, in addition to the above various resins, an organic compound other than the resin, or an organic compound and other mixtures may be used. Alternatively, it may be a compound other than an organic compound.

As the stripping liquid, other non-aqueous stripping liquid can also be used. In this case, it is necessary to form a solvent which is insoluble or insoluble in the fine particle holding layer 29 of the stripping liquid, a solvent which is compatible with the stripping liquid and has solubility to the solute, is compatible with the stripping solution, and has solubility to the solute. The residue removal liquid or the like can be appropriately combined.

The embodiments of the present invention have been described in detail, but these are only specific examples used to clarify the technical contents of the present invention, and the present invention is not limited to the specific examples, and the scope of the present invention is only attached. The scope of the patent application is limited.

The present application is directed to Japanese Patent Application No. 2017-182550, filed on Sep. 22, 2017, to the Japan Patent Office, and Japanese Patent Application No. 2017-232847, filed on Dec. The manner of reference is incorporated herein.

1‧‧‧Substrate cleaning device

2‧‧‧Processing unit

2P‧‧‧Processing unit

3‧‧‧ Controller

3A‧‧‧ processor

3B‧‧‧ memory

4‧‧‧Rotating chuck

5‧‧‧Processing liquid supply nozzle

6‧‧‧ Stripping liquid supply nozzle

7‧‧‧Residue removal liquid supply nozzle

8‧‧‧Rotary pin

9‧‧‧Rotating base

9a‧‧‧through hole

10‧‧‧Rotary axis

11‧‧‧Rotary motor

12‧‧‧1st nozzle moving mechanism

13‧‧‧Processing liquid supply pipe

14‧‧‧Valve

15‧‧‧2nd nozzle moving mechanism

16‧‧‧Supply tube

17‧‧‧ valve

18‧‧‧ valve

19‧‧‧Supply tube

20‧‧‧ valve

22‧‧‧Residue removal liquid supply pipe

23‧‧‧Valves

24‧‧‧Hot media supply nozzle

24a‧‧‧Spray outlet

25‧‧‧Hot media supply tube

26‧‧‧Valves

27‧‧‧Processing fluid

28‧‧‧Hot media

29‧‧‧Particle retention layer

30‧‧‧ particles

31‧‧‧DIW

32‧‧‧SC1 fluid

33‧‧‧Residue removal solution

40‧‧‧Processing Cup

41‧‧‧Anti-block

41A‧‧‧1st anti-block

41B‧‧‧2nd block

42‧‧‧ cup

42A‧‧‧1st Cup

42B‧‧‧2nd Cup

43‧‧‧External wall members

44‧‧‧Anti-lifting mechanism

50‧‧‧ opposite components

50a‧‧‧ opposite

51‧‧‧ hollow shaft

52‧‧‧ opposite member lifting mechanism

53‧‧‧Nozzle receiving member

60‧‧‧ gas supply nozzle

61‧‧‧ gas supply pipe

62‧‧‧ valve

65‧‧‧cleaning liquid supply nozzle

66‧‧‧cleaning liquid supply pipe

67‧‧‧Valves

70‧‧‧ moving nozzle

71‧‧‧Residue removal liquid supply pipe

72A‧‧‧1st gas supply pipe

72B‧‧‧2nd gas supply pipe

72C‧‧‧3rd gas supply pipe

73‧‧‧Valves

74A‧‧‧Valve

74B‧‧‧Valve

74C‧‧‧ valve

75‧‧‧Flow Controller

76B‧‧‧Flow variable valve

76C‧‧‧Flow variable valve

77A‧‧‧Filter

77B‧‧‧Filter

77C‧‧‧Filter

80‧‧‧3rd nozzle moving mechanism

90‧‧‧Center outlet

91‧‧‧Line-shaped jet outlet

92‧‧‧ horizontal jet outlet

93‧‧‧Sloping spout

95‧‧‧ horizontal airflow

96‧‧‧Linear airflow

97‧‧‧ oblique airflow

100‧‧‧heater unit

100a‧‧‧ opposite

101‧‧‧ board body

102‧‧‧Support pins

103‧‧‧heater

104‧‧‧Power supply line

105‧‧‧heater energizing mechanism

106‧‧‧heater lifting mechanism

107‧‧‧ Lifting shaft

108‧‧‧The chuck pin drive mechanism

109‧‧‧ linkage mechanism

110‧‧‧ drive source

160‧‧‧ hole

A1‧‧‧Rotation axis

C‧‧‧ Vehicles

CR‧‧‧Transfer robot

IR‧‧‧Transfer robot

LP‧‧‧Loader

N2‧‧‧nitrogen

S1 ~ S6‧‧‧ steps

S2a‧‧‧ steps

S2b‧‧‧ steps

S3a‧‧‧ steps

S3b‧‧‧ steps

W‧‧‧Substrate

Fig. 1 is a schematic plan view showing the layout of a substrate cleaning apparatus according to a first embodiment of the present invention.

Fig. 2 is a schematic cross-sectional view showing a schematic configuration of a processing unit provided in the substrate cleaning apparatus.

Fig. 3 is a block diagram showing the electrical configuration of a main part of the above substrate cleaning apparatus.

Fig. 4 is a flow chart for explaining an example of substrate cleaning of the above processing unit.

5A to 5H are views showing an exploded view of the state in which the substrate is cleaned.

6A and 6B are schematic cross-sectional views for explaining the state of the substrate-cleaned particle-retaining layer.

Fig. 7 is a graph showing the results of measuring the number of residues.

Fig. 8 is a graph showing the results of measuring the particle removal efficiency (PRE: Particle Removal Efficiency).

Fig. 9 is a schematic cross-sectional view showing a schematic configuration of a processing unit according to a second embodiment of the present invention.

Fig. 10 is a block diagram showing the electrical configuration of the processing unit of the second embodiment.

11A to 11H are views showing the state of cleaning of the substrate of the processing unit of the second embodiment.

12A and 12B are views showing the other example of the substrate cleaning of the processing unit according to the second embodiment.

Claims (13)

A substrate cleaning method comprising the steps of: a treatment liquid supply step of supplying a treatment liquid containing a solute and a volatile solvent to an upper surface of the substrate; and a film formation step of self-supplying to the upper surface of the substrate In the treatment liquid, at least a part of the solvent is volatilized, and the treatment liquid is cured or cured to form a fine particle-retaining layer on the surface of the substrate; and a removing step of supplying the fine particle-retaining layer to the upper surface of the substrate a stripping liquid, which is peeled off from the upper surface of the substrate and removes the fine particle retaining layer; and the solute component contained in the fine particle retaining layer, that is, the solute component, has a property of being insoluble in the stripping liquid before being heated to a temperature above the deterioration temperature, and The film forming step includes: a heating step of heating the processing liquid supplied to the upper surface of the substrate to a temperature below the deterioration temperature by heating to a temperature above the deterioration temperature to dissolve the stripping liquid; The temperature is not caused to deteriorate the above solute component to form the above-mentioned particle protection on the upper surface of the substrate Further, the substrate cleaning method further includes a residue removing step of supplying a residue removing liquid having solubility to the solute component heated to a temperature higher than the deterioration temperature to the upper surface of the substrate after the removing step, and The residue remaining on the surface of the substrate remaining after removing the above-mentioned fine particle-retaining layer is removed. The substrate cleaning method according to claim 1, wherein in the heating step, the heat medium having a boiling point not reaching the deterioration temperature is supplied to the lower surface of the substrate, that is, the back surface, and is supplied to the above The treatment liquid on the upper surface of the substrate is heated to a temperature that does not reach the above-described deterioration temperature. The substrate cleaning method according to claim 1 or 2, wherein the temperature of the treatment liquid on the substrate heated in the heating step does not reach the boiling point of the solvent. The substrate cleaning method according to claim 3, wherein the stripping solution is compatible with the solvent. A substrate cleaning method comprising the steps of: a treatment liquid supply step of supplying a treatment liquid containing a solute and a volatile solvent to an upper surface of the substrate; and a film formation step of self-supplying to the upper surface of the substrate In the treatment liquid, at least a part of the solvent is volatilized, and the treatment liquid is cured or cured to form a fine particle-retaining layer on the surface of the substrate; and a removing step of supplying the fine particle-retaining layer to the upper surface of the substrate a stripping liquid, which is peeled off from the upper surface of the substrate and removes the fine particle holding layer; and the film forming step includes a heating step of supplying a heat medium to the lower surface of the substrate, that is, the back surface, and supplying the substrate to the substrate The processing liquid on the upper surface is heated to a temperature that does not reach the boiling point of the heat medium, and the fine particle holding layer is formed on the upper surface of the substrate; and the substrate cleaning method further comprises: a residue removing step, after the removing step The upper surface of the substrate is supplied with a solute component which is the solute contained in the fine particle holding layer. The solution of the residue removing liquid, and remaining in the residue is removed after the substrate on the holding surface of the layer of the fine particles removed. The substrate cleaning method according to claim 5, wherein the temperature of the treatment liquid on the substrate heated in the heating step does not reach the boiling point of the solvent. The substrate cleaning method of claim 6, wherein the stripping solution is compatible with the solvent. A substrate cleaning method comprising the steps of: a treatment liquid supply step of supplying a treatment liquid containing a solute and a volatile solvent to an upper surface of the substrate; and a film formation step of self-supplying to the upper surface of the substrate In the treatment liquid, at least a part of the solvent is volatilized, and the treatment liquid is cured or cured to form a fine particle-retaining layer on the surface of the substrate; and a removing step of supplying the fine particle-retaining layer to the upper surface of the substrate a stripping liquid, which is peeled off from the upper surface of the substrate and removes the fine particle holding layer; and the film forming step includes a heating step of heating the processing liquid supplied to the upper surface of the substrate to a solvent that does not reach the solvent a temperature at which the boiling point is formed to form the fine particle holding layer on the upper surface of the substrate; and the substrate cleaning method further includes a residue removing step of supplying the fine particle holding layer to the upper surface of the substrate after the removing step The above-mentioned solute, that is, the solute component, has a solubility residue removal liquid, and remains in the removal of the above The surface on the substrate after removing the residue of the grain retention layer. The substrate cleaning method of claim 8, wherein the stripping solution is compatible with the solvent Sex. A substrate cleaning apparatus comprising: a processing liquid supply unit that supplies a processing liquid containing a solute and a volatile solvent to an upper surface of the substrate; and a heating unit that heats the substrate to cause at least a part of the solvent to be used The curing solution is cured or cured to form a fine particle holding layer on the upper surface of the substrate, and a peeling liquid supply unit that supplies a peeling liquid that peels off the fine particle holding layer to the upper surface of the substrate, and a residue removing liquid supply unit. a residue removing liquid for removing residue remaining on the surface of the substrate remaining after peeling off and removing the fine particle holding layer, and a controller for controlling the processing liquid supply unit, the heating unit, and the like a stripping solution supply unit and the residue removing liquid supply unit; and the solute component of the solute contained in the fine particle holding layer has a property of being insoluble or insoluble in the stripping liquid before being heated to a temperature above the deterioration temperature, and heating Deteriorating above the above-mentioned deterioration temperature, and soluble in the above-mentioned stripping liquid; The removal liquid has solubility in the solute component before heating to above the above-mentioned deterioration temperature, and the controller is programmed to perform the following steps: a treatment liquid supply step of supplying the treatment liquid to the upper surface of the substrate; and a film formation step At least a part of the solvent is volatilized from the treatment liquid supplied onto the upper surface of the substrate, and the treatment liquid is heated to a temperature that does not reach the deterioration temperature without deteriorating the solute component on the substrate. Forming the above-mentioned fine particle holding layer on the upper surface; and removing a step of supplying the above-mentioned peeling to the upper surface of the substrate And removing the fine particle retaining layer from the upper surface of the substrate; and a residue removing step of supplying the residue removing liquid onto the upper surface of the substrate and remaining on the substrate after removing the fine particle holding layer The residue of the surface is removed. The substrate cleaning apparatus of claim 10, wherein the heating unit comprises a heat medium supply unit that supplies a heat medium having a boiling point that does not reach the deterioration temperature to a lower surface of the substrate. A substrate cleaning apparatus comprising: a processing liquid supply unit that supplies a processing liquid containing a solute and a volatile solvent to an upper surface of the substrate; and a heating unit including a thermal medium that supplies the thermal medium to a lower surface of the substrate a supply unit that heats the substrate by a heat medium supplied from the heat medium supply unit to volatilize at least a part of the solvent to cure or cure the treatment liquid, thereby forming a particle holding layer on the upper surface of the substrate; a supply unit that supplies a peeling liquid that peels off the fine particle holding layer to the upper surface of the substrate, and a residue removing liquid supply unit that supplies the substrate remaining on the upper surface of the substrate to be removed and removed by the fine particle holding layer. a residue removing liquid for removing residue on the upper surface; and a controller for controlling the processing liquid supply unit, the heating unit, the stripping liquid supply unit, and the residue removing liquid supply unit; and the residue removing liquid to the fine particle retaining layer The above-mentioned solute, that is, the solute component, has solubility, and the above controller Process to perform the steps of: processing liquid supplying step, to which the base Supplying the treatment liquid on the upper surface of the plate; forming a film by volatilizing at least a part of the solvent from the treatment liquid supplied onto the upper surface of the substrate, and heating the treatment liquid to the heat medium a temperature at a boiling point to form the fine particle holding layer on the upper surface of the substrate; a removing step of supplying the stripping liquid onto the upper surface of the substrate, and peeling off and removing the fine particle holding layer from the upper surface of the substrate; and removing the residue In step, the residue removal liquid is supplied onto the upper surface of the substrate, and the residue remaining on the upper surface of the substrate after the removal of the fine particle holding layer is removed. A substrate cleaning apparatus comprising: a processing liquid supply unit that supplies a processing liquid containing a solute and a volatile solvent to an upper surface of the substrate; and a heating unit that heats the substrate to volatilize at least a part of the solvent The curing solution is cured or cured to form a fine particle holding layer on the upper surface of the substrate, and a peeling liquid supply unit that supplies a peeling liquid that peels off the fine particle holding layer to the upper surface of the substrate, and a residue removing liquid supply unit. a residue removing liquid for removing residue remaining on the surface of the substrate remaining after peeling off and removing the fine particle holding layer, and a controller for controlling the processing liquid supply unit, the heating unit, and the like a peeling liquid supply unit and the residue removing liquid supply unit; wherein the residue removing liquid has solubility in a solute component which is the solute contained in the fine particle holding layer, and the controller is programmed to perform the following step: a processing liquid supply step Supplying the above treatment liquid to the upper surface of the substrate; a film forming step, On a table from the supply to the substrate Forming at least a part of the solvent in the treatment liquid on the surface, heating the treatment liquid to a temperature not lower than the boiling point of the solvent, forming the fine particle holding layer on the upper surface of the substrate; and removing the substrate to the substrate The top surface is supplied with the stripping liquid, and the fine particle holding layer is peeled off from the upper surface of the substrate; and a residue removing step of supplying the residue removing liquid to the upper surface of the substrate, and remaining on the removing the particle holding layer The residue on the surface above the substrate is removed.