TWI667689B - Substrate cleaning method and substrate cleaning apparatus - Google Patents
Substrate cleaning method and substrate cleaning apparatus Download PDFInfo
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Abstract
本發明之基板洗淨方法包含以下步驟:處理液供給步驟,其向基板之上表面供給包含溶質及具有揮發性之溶劑之處理液;成膜步驟,其藉由自供給至上述基板之上表面之上述處理液中使上述溶劑之至少一部分揮發,使上述處理液固化或硬化,而於上述基板之上表面形成微粒保持層;及去除步驟,其向上述基板之上表面供給剝離上述微粒保持層之剝離液,而自上述基板之上表面剝離並去除上述微粒保持層。上述微粒保持層所含之上述溶質即溶質成分具有如下性質:於加熱至變質溫度以上之前不溶於上述剝離液,且藉由加熱至上述變質溫度以上而變質,而可溶於上述剝離液。上述成膜步驟包含:加熱步驟,其藉由將供給至上述基板之上表面之上述處理液加熱至未達上述變質溫度之溫度,藉而不使上述溶質成分變質地於上述基板之上表面形成上述微粒保持層。上述基板洗淨方法進而包含:殘渣去除步驟,其向上述去除步驟後之上述基板之上表面,供給對加熱至上述變質溫度以上之前之上述溶質成分具有溶解性之殘渣去除液,而將殘留於去除上述微粒保持層後之上述基板之上表面之殘渣去除。The substrate cleaning method of the present invention comprises the steps of: a treatment liquid supply step of supplying a treatment liquid containing a solute and a volatile solvent to the upper surface of the substrate; and a film formation step of self-supplying to the upper surface of the substrate In the treatment liquid, at least a part of the solvent is volatilized, and the treatment liquid is cured or cured to form a fine particle-retaining layer on the surface of the substrate; and a removing step of supplying the fine particle-retaining layer to the upper surface of the substrate The stripping liquid is peeled off from the upper surface of the substrate and the above-mentioned fine particle holding layer is removed. The solute component, which is the solute contained in the fine particle-retaining layer, has a property of being insoluble in the peeling liquid before being heated to a temperature higher than the deterioration temperature, and is deteriorated by heating to the above-described deterioration temperature, thereby being soluble in the peeling liquid. The film forming step includes a heating step of heating the processing liquid supplied to the upper surface of the substrate to a temperature that does not reach the deterioration temperature, without causing the solute component to be deteriorated on the upper surface of the substrate. The above microparticle-retaining layer. Further, the substrate cleaning method further includes a residue removing step of supplying a residue removing liquid having solubility to the solute component before heating to the deterioration temperature or higher to the surface of the substrate after the removing step, and remaining in the residue removing liquid The residue on the upper surface of the substrate after removing the above-mentioned fine particle holding layer is removed.
Description
本發明係關於一種基板洗淨方法及基板洗淨裝置。成為處理對象之基板之例,包含半導體晶圓、液晶顯示裝置用基板、有機EL(Electroluminescence:電致發光)顯示裝置等之FPD(Flat Panel Display:平板顯示器)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板、太陽電池用基板等。The present invention relates to a substrate cleaning method and a substrate cleaning apparatus. Examples of the substrate to be processed include a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for an FPD (Flat Panel Display) such as an organic EL (Electroluminescence) display device, a substrate for a disk, and a disk. A substrate, a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, a solar cell substrate, or the like.
於半導體裝置之製造步驟中,為了去除附著於基板之各種污染物、前步驟中使用之處理液及抗蝕劑等之殘渣、或各種微粒等(以下有時通稱為「微粒」),而實施洗淨處理。In the manufacturing process of the semiconductor device, in order to remove various contaminants adhering to the substrate, residues of the treatment liquid and the resist used in the previous step, or various fine particles (hereinafter sometimes referred to as "fine particles") Washed.
於洗淨步驟中,一般藉由將去離子水(DIW:DeIonized Water)等洗淨液供給至基板而物理性去除微粒,或藉由將與微粒發生化學反應之藥液供給至基板而化學性去除該微粒。In the washing step, the cleaning liquid is generally supplied to the substrate by supplying a cleaning liquid such as deionized water (DIW: DeIonized Water) to physically remove the particles, or chemically supplied to the substrate by chemically reacting the particles with the particles. The particles are removed.
然而,形成於基板上之圖案之微細化及複雜化不斷發展。因此,物理或化學性去除微粒日趨困難。However, the miniaturization and complication of the pattern formed on the substrate has been progressing. Therefore, physical or chemical removal of particles is becoming increasingly difficult.
對此,提案出以下方法:於基板之上表面,供給包含溶質及具有揮發性之溶劑之處理液,於形成使該處理液固化或硬化而成之膜(以下稱為「微粒保持層」)後,溶解並去除該微粒保持層(日本專利特開2014-197717號公報及美國專利申請案公開第2015/128994號說明書)。In response to this, a method is proposed in which a treatment liquid containing a solute and a volatile solvent is supplied to a surface of the substrate to form a film which cures or hardens the treatment liquid (hereinafter referred to as "particle retention layer"). Thereafter, the fine particle-retaining layer is dissolved and removed (Japanese Patent Laid-Open No. Hei. No. 2014-197717 and U.S. Patent Application Publication No. 2015/128994).
於該方法中,於處理液固化或硬化而形成微粒保持層時,將微粒自基板分離。且,將分離出之微粒保持於微粒保持層中。In this method, when the treatment liquid is solidified or hardened to form a particulate retention layer, the microparticles are separated from the substrate. And, the separated fine particles are held in the fine particle holding layer.
接著,將溶解處理液供給至基板之上表面。藉此,由於將微粒保持層於基板上溶解而去除,故將微粒與微粒保持層一併自基板之上表面去除(日本專利特開2014-197717號公報)。Next, the dissolution treatment liquid is supplied to the upper surface of the substrate. By removing the fine particle-retaining layer on the substrate and removing it, the fine particles and the fine particle-retaining layer are removed from the upper surface of the substrate (Japanese Patent Laid-Open Publication No. 2014-197717).
或,亦有將剝離處理液供給至基板之上表面之情形。藉此,將微粒保持層自基板之上表面剝離。接著,藉由供給溶解處理液,將微粒保持層於基板上溶解(參照美國專利申請案公開第2015/128994號說明書)。Alternatively, there is a case where the peeling treatment liquid is supplied to the upper surface of the substrate. Thereby, the fine particle holding layer is peeled off from the upper surface of the substrate. Next, the fine particle-retaining layer is dissolved on the substrate by supplying the dissolution treatment liquid (refer to the specification of U.S. Patent Application Publication No. 2015/128994).
然而,於日本專利特開2014-197717號公報及美國專利申請案公開第2015/128994號說明書之方法中,因任一方法皆使微粒保持層在基板上溶解,故有微粒一邊溶解一邊自微粒保持層脫落而再附著於基板之虞。因此,微粒去除率不如期待之高。However, in the method of the specification of Japanese Laid-Open Patent Publication No. 2014-197717 and the specification of the U.S. Patent Application Publication No. 2015/128994, the microparticle-retaining layer is dissolved on the substrate by any method, so that the microparticles dissolve while being self-particles. The layer is removed and attached to the substrate. Therefore, the particle removal rate is not as high as expected.
因此,本案之發明者研究不使經剝離之微粒保持層溶解,而自基板之上表面予以去除。具體而言,於將微粒保持層自基板之上表面剝離後,例如將清洗液供給至該基板之上表面,藉此洗淨該基板之上表面。Therefore, the inventors of the present invention studied not to dissolve the exfoliated microparticle-preserving layer and remove it from the upper surface of the substrate. Specifically, after the fine particle-retaining layer is peeled off from the upper surface of the substrate, for example, a cleaning liquid is supplied to the upper surface of the substrate, whereby the upper surface of the substrate is washed.
然而,於該情形時,已知有因微粒保持層引起之微小殘渣未自基板之上表面剝離而殘留於該基板之上表面,或經剝離之殘渣再附著於基板之上表面之情形。However, in this case, it is known that the minute residue caused by the fine particle holding layer is not peeled off from the upper surface of the substrate and remains on the upper surface of the substrate, or the peeled residue is reattached to the upper surface of the substrate.
對此,本發明之目的在於提供一種不但能以高去除率自基板之上表面去除微粒,並可抑制微粒保持層之殘渣殘留或再附著於基板之上表面的基板洗淨方法及基板洗淨裝置。In view of the above, an object of the present invention is to provide a substrate cleaning method and substrate cleaning which can remove particles from the upper surface of the substrate at a high removal rate, and can prevent the residue of the particle holding layer from remaining or reattaching to the upper surface of the substrate. Device.
為了達成上述目的,本發明提供一種第1基板洗淨方法,其包含:處理液供給步驟,其向基板之上表面供給包含溶質及具有揮發性之溶劑之處理液;成膜步驟,其藉由自供給至上述基板之上表面之上述處理液中使上述溶劑之至少一部分揮發,使上述處理液固化或硬化,而於上述基板之上表面形成微粒保持層;及去除步驟,其向上述基板之上表面供給剝離上述微粒保持層之剝離液,而自上述基板之上表面剝離並去除上述微粒保持層。In order to achieve the above object, the present invention provides a first substrate cleaning method comprising: a processing liquid supply step of supplying a treatment liquid containing a solute and a volatile solvent to an upper surface of the substrate; and a film formation step by At least a part of the solvent is volatilized from the treatment liquid supplied onto the upper surface of the substrate, and the treatment liquid is solidified or cured to form a fine particle-retaining layer on the upper surface of the substrate; and a removal step is performed on the substrate The upper surface is supplied with a stripping liquid which peels off the fine particle holding layer, and the surface of the upper surface of the substrate is peeled off and the fine particle holding layer is removed.
於該方法中,上述微粒保持層所含之上述溶質即溶質成分具有如下性質:於加熱至變質溫度以上之前,難溶或不溶於上述剝離液,且藉由加熱至上述變質溫度以上而變質,而可溶於上述剝離液。上述成膜步驟包含加熱步驟,其藉由將供給至上述基板上表面之上述處理液加熱至未達上述變質溫度之溫度,而不使上述溶質成分變質地於上述基板之上表面形成上述微粒保持層。上述殘渣去除步驟向上述去除步驟後之上述基板之上表面,供給對加熱至上述變質溫度以上前之上述溶質成分具有溶解性之殘渣去除液,而將殘留於去除上述微粒保持層後之上述基板之上表面之殘渣去除。In the method, the solute component, which is the solute contained in the fine particle-retaining layer, has a property of being poorly soluble or insoluble in the peeling liquid before being heated to a temperature higher than the deterioration temperature, and is deteriorated by heating to the above-described deterioration temperature or higher. It is soluble in the above stripping solution. The film forming step includes a heating step of heating the processing liquid supplied to the upper surface of the substrate to a temperature that does not reach the deterioration temperature without deforming the solute component to form the fine particle retention on the upper surface of the substrate. Floor. The residue removing step supplies a residue removing liquid having solubility to the solute component before heating to the above-described deterioration temperature to the upper surface of the substrate after the removing step, and remaining on the substrate after removing the fine particle holding layer The residue on the upper surface is removed.
根據該方法,於包含加熱步驟之成膜步驟中,處理液固化或硬化。藉此,可於基板之上表面形成難溶或不溶於剝離液但可由該剝離液剝離之微粒保持層。According to this method, the treatment liquid is solidified or hardened in the film formation step including the heating step. Thereby, a fine particle-retaining layer which is insoluble or insoluble in the peeling liquid but which can be peeled off by the peeling liquid can be formed on the upper surface of the substrate.
於處理液固化或硬化時,將微粒與基板分離。經分離之微粒被保持於微粒保持層中。因此,於去除步驟中,可藉由向基板之上表面供給剝離液,而將形成於該基板之上表面之微粒保持層不由剝離液溶解地連同保持於該微粒保持層中之微粒自基板之上表面剝離並去除。The particles are separated from the substrate as the treatment liquid solidifies or hardens. The separated particles are held in the particle holding layer. Therefore, in the removing step, the fine particle holding layer formed on the upper surface of the substrate may be dissolved without being dissolved by the stripping liquid together with the particles held in the fine particle holding layer from the substrate by supplying the stripping liquid to the upper surface of the substrate. The upper surface is peeled off and removed.
又,於後續之殘渣去除步驟中,向去除微粒保持層後之基板之上表面,供給具有使形成該微粒保持層之溶質成分溶解之性質的殘渣去除液,藉此,可溶解微粒保持層之殘渣而自基板之上表面去除。Further, in the subsequent residue removing step, the residue removing liquid having the property of dissolving the solute component forming the fine particle holding layer is supplied to the upper surface of the substrate after removing the fine particle holding layer, whereby the fine particle retaining layer can be dissolved. The residue is removed from the upper surface of the substrate.
因此,根據該方法,可藉由將微粒保持層連同保持之微粒自基板之上表面剝離,而以高去除率去除微粒。再者,可抑制微粒保持層之殘渣殘留或再附著於基板之上表面。Therefore, according to this method, the fine particles can be removed at a high removal rate by peeling the fine particle-retaining layer together with the retained fine particles from the upper surface of the substrate. Further, it is possible to suppress the residue of the fine particle-retaining layer from remaining or reattaching to the upper surface of the substrate.
於本發明之一實施形態中,於上述加熱步驟中,藉由對上述基板之下表面即背面供給沸點未達上述變質溫度之熱媒體,而將供給至上述基板之上表面之上述處理液加熱至未達上述變質溫度之溫度。According to an embodiment of the present invention, in the heating step, the processing liquid supplied to the upper surface of the substrate is heated by supplying a heat medium having a boiling point not lower than the deterioration temperature to the back surface of the substrate, that is, the back surface. The temperature to the above deterioration temperature is not reached.
根據該方法,可藉由對基板之背面供給熱媒體之簡易的加熱方法,執行成膜步驟中之加熱步驟。According to this method, the heating step in the film forming step can be performed by a simple heating method of supplying a heat medium to the back surface of the substrate.
因此,例如無須於腔室內設置電加熱器等,或將基板搬送至設置有電加熱器等之其他腔室而實施加熱步驟。即,可將基板洗淨方法之步驟簡化。Therefore, for example, it is not necessary to provide an electric heater or the like in the chamber, or to transport the substrate to another chamber provided with an electric heater or the like to perform a heating step. That is, the steps of the substrate cleaning method can be simplified.
於本發明之一實施形態中,於上述加熱步驟中經加熱之上述基板上之上述處理液之溫度未達上述溶劑之沸點。In one embodiment of the invention, the temperature of the treatment liquid on the substrate heated in the heating step does not reach the boiling point of the solvent.
根據該方法,可使溶劑殘留於以成膜步驟中之加熱步驟加熱後之微粒保持層中。因此,於後續之去除步驟中,可藉由殘留於微粒保持層中之溶劑、與被供給之剝離液之相互作用,而容易地將微粒保持層自基板之上表面剝離。即,可藉由使剝離液浸透於微粒保持層中並使其到達與基板之界面,而使微粒保持層自基板之上表面浮起並被剝離。According to this method, the solvent can be left in the fine particle-retaining layer heated by the heating step in the film forming step. Therefore, in the subsequent removal step, the fine particle-retaining layer can be easily peeled off from the upper surface of the substrate by the interaction of the solvent remaining in the fine particle-retaining layer and the supplied peeling liquid. That is, the fine particle holding layer can be floated from the upper surface of the substrate and peeled off by allowing the peeling liquid to permeate into the fine particle holding layer and reaching the interface with the substrate.
為了進一步提高該效果,較佳為上述剝離液對上述溶劑具有相溶性。In order to further improve this effect, it is preferred that the above-mentioned stripping liquid has compatibility with the above solvent.
本發明進而提供第2基板洗淨方法,其包含以下步驟:處理液供給步驟,其向基板之上表面供給包含溶質及具有揮發性之溶劑之處理液;成膜步驟,其藉由自供給至上述基板之上表面之上述處理液中使上述溶劑之至少一部分揮發,使上述處理液固化或硬化,而於上述基板之上表面形成微粒保持層;去除步驟,其向上述基板之上表面供給剝離上述微粒保持層之剝離液,而自上述基板之上表面剝離並去除上述微粒保持層;及殘渣去除步驟。且,上述成膜步驟包含:加熱步驟,其藉由向上述基板之下表面即背面供給,且將供給至上述基板上表面之上述處理液加熱至未達上述熱媒體之沸點之溫度,而於上述基板之上表面形成上述微粒保持層。且,上述殘渣去除步驟係向上述去除步驟後之上述基板之上表面,供給對上述微粒保持層所含之上述溶質即溶質成分具有溶解性之殘渣去除液,而將殘留於去除上述微粒保持層後之上述基板之上表面之殘渣去除。The present invention further provides a second substrate cleaning method comprising the steps of: a treatment liquid supply step of supplying a treatment liquid containing a solute and a volatile solvent to an upper surface of the substrate; and a film formation step of self-supplying to At least a part of the solvent is volatilized in the treatment liquid on the upper surface of the substrate, and the treatment liquid is solidified or cured to form a fine particle-retaining layer on the surface of the substrate; and a removal step is performed to supply the surface of the substrate The stripping liquid of the fine particle-retaining layer is peeled off from the upper surface of the substrate to remove the fine particle-retaining layer; and a residue removing step. Further, the film forming step includes a heating step of supplying the processing liquid supplied to the upper surface of the substrate to a temperature lower than a boiling point of the heat medium by supplying the surface to the lower surface of the substrate, that is, the back surface. The fine particle holding layer is formed on the upper surface of the substrate. Further, the residue removing step supplies a residue removing liquid having solubility to the solute component which is the solute contained in the fine particle holding layer to the upper surface of the substrate after the removing step, and remains in the particulate retaining layer. The residue on the surface above the substrate is removed.
根據該方法,於包含加熱步驟之成膜步驟中,處理液固化或硬化。藉此,於基板之上表面形成可藉由剝離液剝離之微粒保持層。According to this method, the treatment liquid is solidified or hardened in the film formation step including the heating step. Thereby, a fine particle-retaining layer which can be peeled off by the peeling liquid is formed on the upper surface of the substrate.
於處理液固化或硬化時,將微粒與基板分離。經分離之微粒被保持於微粒保持層中。因此,於去除步驟中,可藉由向基板之上表面供給剝離液,而將形成於該基板之上表面之微粒保持層連同保持於該微粒保持層中之微粒而自基板之上表面剝離並去除。The particles are separated from the substrate as the treatment liquid solidifies or hardens. The separated particles are held in the particle holding layer. Therefore, in the removing step, the fine particle holding layer formed on the upper surface of the substrate can be peeled off from the upper surface of the substrate together with the fine particles held in the fine particle holding layer by supplying the peeling liquid to the upper surface of the substrate. Remove.
又,於後續之殘渣去除步驟中,向去除微粒保持層後之基板之上表面供給具有使形成該微粒保持層之溶質成分溶解之性質的殘渣去除液,藉此,可將微粒保持層之殘渣溶解而自基板之上表面去除。Further, in the subsequent residue removing step, the residue removing liquid having the property of dissolving the solute component forming the fine particle holding layer is supplied to the upper surface of the substrate after removing the fine particle holding layer, whereby the residue of the fine particle holding layer can be removed Dissolved and removed from the upper surface of the substrate.
因此,根據該方法,可藉由將微粒保持層連同保持之微粒自基板之上表面剝離,而以高去除率去除微粒。再者,可抑制微粒保持層之殘渣殘留或再附著於基板之上表面。Therefore, according to this method, the fine particles can be removed at a high removal rate by peeling the fine particle-retaining layer together with the retained fine particles from the upper surface of the substrate. Further, it is possible to suppress the residue of the fine particle-retaining layer from remaining or reattaching to the upper surface of the substrate.
且,根據該方法,可藉由向基板之背面供給熱媒體之簡易的加熱方法,執行成膜步驟中之加熱步驟。Further, according to this method, the heating step in the film forming step can be performed by a simple heating method of supplying a heat medium to the back surface of the substrate.
因此,例如無須於腔室內設置電加熱器等,或將基板搬送至設置有電加熱器等之其他腔室而實施加熱步驟。即,可將基板洗淨方法之步驟簡化。Therefore, for example, it is not necessary to provide an electric heater or the like in the chamber, or to transport the substrate to another chamber provided with an electric heater or the like to perform a heating step. That is, the steps of the substrate cleaning method can be simplified.
於本發明之一實施形態中,於上述加熱步驟中經加熱之上述基板上之上述處理液之溫度未達上述溶劑之沸點。In one embodiment of the invention, the temperature of the treatment liquid on the substrate heated in the heating step does not reach the boiling point of the solvent.
根據該方法,可使溶劑殘留於在成膜步驟中之加熱步驟加熱後之微粒保持層中。因此,於後續之去除步驟中,可藉由殘留於微粒保持層中之溶劑、與被供給之剝離液之相互作用,而容易地將微粒保持層自基板之上表面剝離。即,可藉由使剝離液浸透於微粒保持層中,並使剝離液到達微粒保持層與基板之界面,而使微粒保持層自基板之上表面浮起並被剝離。According to this method, the solvent can be left in the fine particle-retaining layer heated in the heating step in the film forming step. Therefore, in the subsequent removal step, the fine particle-retaining layer can be easily peeled off from the upper surface of the substrate by the interaction of the solvent remaining in the fine particle-retaining layer and the supplied peeling liquid. That is, the fine particle holding layer can be floated from the upper surface of the substrate and peeled off by allowing the peeling liquid to permeate into the fine particle holding layer and bringing the peeling liquid to the interface between the fine particle holding layer and the substrate.
為了進一步提高該效果,較佳為上述剝離液對上述溶劑具有相溶性。In order to further improve this effect, it is preferred that the above-mentioned stripping liquid has compatibility with the above solvent.
本發明進而提供第3基板洗淨方法,其包含以下步驟:處理液供給步驟,其向基板之上表面供給包含溶質及具有揮發性之溶劑之處理液;成膜步驟,其藉由自供給至上述基板之上表面之上述處理液中使上述溶劑之至少一部分揮發,使上述處理液固化或硬化,而於上述基板之上表面形成微粒保持層;去除步驟,其將剝離上述微粒保持層之剝離液供給至上述基板之上表面,而自上述基板之上表面剝離並去除上述微粒保持層;及殘渣去除步驟。且,上述成膜步驟包含:加熱步驟,其藉由將供給至上述基板之上表面之上述處理液加熱至未達上述溶劑之沸點之溫度,而於上述基板之上表面形成上述微粒保持層。且上述殘渣去除步驟係向上述去除步驟後之上述基板之上表面,供給對上述微粒保持層所含之上述溶質即溶質成分具有溶解性之殘渣去除液,而將殘留於去除上述微粒保持層後之上述基板之上表面之殘渣去除。The present invention further provides a third substrate cleaning method comprising the steps of: a treatment liquid supply step of supplying a treatment liquid containing a solute and a volatile solvent to an upper surface of the substrate; and a film formation step of self-supplying to At least a part of the solvent is volatilized in the treatment liquid on the upper surface of the substrate, and the treatment liquid is solidified or cured to form a fine particle-retaining layer on the surface of the substrate; and a removing step of peeling off the fine particle-retaining layer The liquid is supplied to the upper surface of the substrate, and the fine particle holding layer is peeled off from the upper surface of the substrate; and a residue removing step. Further, the film forming step includes a heating step of forming the fine particle holding layer on the upper surface of the substrate by heating the processing liquid supplied onto the upper surface of the substrate to a temperature not lower than the boiling point of the solvent. Further, the residue removing step supplies a residue removing liquid having solubility to the solute component which is the solute contained in the fine particle holding layer to the upper surface of the substrate after the removing step, and remains after removing the fine particle holding layer. The residue on the surface above the substrate is removed.
根據該方法,於包含加熱步驟之成膜步驟中,處理液固化或硬化。藉此,於基板之上表面形成可由剝離液剝離之微粒保持層。According to this method, the treatment liquid is solidified or hardened in the film formation step including the heating step. Thereby, a fine particle-retaining layer which can be peeled off by the peeling liquid is formed on the upper surface of the substrate.
於處理液固化或硬化時,將微粒與基板分離。經分離之微粒被保持於微粒保持層中。因此,於去除步驟中,可藉由向基板之上表面供給剝離液,而將形成於該基板之上表面之微粒保持層連同保持於該微粒保持層中之微粒而自基板之上表面剝離並去除。The particles are separated from the substrate as the treatment liquid solidifies or hardens. The separated particles are held in the particle holding layer. Therefore, in the removing step, the fine particle holding layer formed on the upper surface of the substrate can be peeled off from the upper surface of the substrate together with the fine particles held in the fine particle holding layer by supplying the peeling liquid to the upper surface of the substrate. Remove.
又,於後續之殘渣去除步驟中,對去除微粒保持層後之基板之上表面,供給具有使形成該微粒保持層之溶質成分溶解之性質的殘渣去除液,藉此,可將微粒保持層之殘渣溶解而自基板之上表面去除。Further, in the subsequent residue removing step, a residue removing liquid having a property of dissolving a solute component forming the fine particle holding layer is supplied to the upper surface of the substrate after removing the fine particle holding layer, whereby the fine particle retaining layer can be provided The residue is dissolved and removed from the upper surface of the substrate.
因此,根據該方法,可藉由將微粒保持層連同保持之微粒自基板之上表面剝離,而以高去除率去除微粒。再者,可抑制微粒保持層之殘渣殘留或再附著於基板之上表面。Therefore, according to this method, the fine particles can be removed at a high removal rate by peeling the fine particle-retaining layer together with the retained fine particles from the upper surface of the substrate. Further, it is possible to suppress the residue of the fine particle-retaining layer from remaining or reattaching to the upper surface of the substrate.
且,根據該方法,可使溶劑殘留於在成膜步驟中之加熱步驟加熱後之微粒保持層中。因此,於後續之去除步驟中,可藉由殘留於微粒保持層中之溶劑、與被供給之剝離液之相互作用,而容易地將微粒保持層自基板之上表面剝離。即,可藉由使剝離液浸透於微粒保持層中並使其到達與基板之界面,而使微粒保持層自基板之上表面浮起並被剝離。Further, according to this method, the solvent can be left in the fine particle-retaining layer heated in the heating step in the film forming step. Therefore, in the subsequent removal step, the fine particle-retaining layer can be easily peeled off from the upper surface of the substrate by the interaction of the solvent remaining in the fine particle-retaining layer and the supplied peeling liquid. That is, the fine particle holding layer can be floated from the upper surface of the substrate and peeled off by allowing the peeling liquid to permeate into the fine particle holding layer and reaching the interface with the substrate.
為了進一步提高該效果,較佳為上述剝離液對上述溶劑具有相溶性。In order to further improve this effect, it is preferred that the above-mentioned stripping liquid has compatibility with the above solvent.
本發明又提供第1基板洗淨裝置,其包含:處理液供給單元,其向基板之上表面供給包含溶質及具有揮發性之溶劑之處理液;加熱單元,其加熱上述基板,使上述溶劑之至少一部分發揮,藉此使上述處理液固化或硬化,而於上述基板之上表面形成微粒保持層;剝離液供給單元,其向上述基板之上表面供給剝離上述微粒保持層之剝離液;殘渣去除液供給單元,其向上述基板之上表面,供給將殘留於剝離並去除上述微粒保持層後之上述基板之上表面之殘渣去除之殘渣去除液;及控制器,其控制上述處理液供給單元、上述加熱單元、上述剝離液供給單元、及上述殘渣去除液供給單元。上述微粒保持層所含之上述溶質即溶質成分具有如下性質:於加熱至變質溫度以上之前難溶或不溶於上述剝離液,且藉由加熱至上述變質溫度以上而變質,而可溶於上述剝離液。上述殘渣去除液對加熱至上述變質溫度以上之前之上述溶質成分具有溶解性。上述控制器經編程為執行以下步驟:處理液供給步驟,其向上述基板之上表面供給上述處理液;成膜步驟,其藉由自供給至上述基板之上表面之上述處理液中使上述溶劑之至少一部分揮發,且將上述處理液加熱至未達上述變質溫度之溫度,而不使上述溶質成分變質地於上述基板之上表面形成上述微粒保持層;去除步驟,其向上述基板之上表面供給上述剝離液,而自上述基板之上表面剝離並去除上述微粒保持層;及殘渣去除步驟,其向上述基板之上表面供給上述殘渣去除液,而將殘留於去除上述微粒保持層後之上述基板之上表面之殘渣去除。Further, the present invention provides a first substrate cleaning apparatus comprising: a processing liquid supply unit that supplies a processing liquid containing a solute and a volatile solvent to an upper surface of the substrate; and a heating unit that heats the substrate to cause the solvent At least a part of the treatment liquid is cured or cured to form a fine particle-retaining layer on the upper surface of the substrate, and a peeling liquid supply unit that supplies the peeling liquid that peels off the fine particle-retaining layer to the upper surface of the substrate; a liquid supply unit that supplies, to the upper surface of the substrate, a residue removing liquid that removes residues remaining on the upper surface of the substrate after peeling off and removing the fine particle holding layer; and a controller that controls the processing liquid supply unit, The heating unit, the peeling liquid supply unit, and the residue removing liquid supply unit. The solute component, which is the solute contained in the fine particle-retaining layer, has a property of being insoluble or insoluble in the above-mentioned peeling liquid before being heated to a temperature higher than the deterioration temperature, and is deteriorated by heating to the above-described deterioration temperature, thereby being soluble in the above-mentioned peeling liquid. The residue removal liquid has solubility in the solute component before heating to the above-described deterioration temperature or higher. The controller is programmed to perform the following steps: a treatment liquid supply step of supplying the treatment liquid to the upper surface of the substrate; and a film formation step of causing the solvent to be supplied from the treatment liquid supplied to the upper surface of the substrate At least a part of the volatilization is performed, and the treatment liquid is heated to a temperature that does not reach the deterioration temperature without deforming the solute component to form the microparticle-retaining layer on the upper surface of the substrate; and the removing step is performed on the upper surface of the substrate Supplying the stripping liquid, and peeling off and removing the fine particle holding layer from the upper surface of the substrate; and a residue removing step of supplying the residue removing liquid onto the upper surface of the substrate, and remaining in the above-mentioned removal of the fine particle holding layer The residue on the surface above the substrate is removed.
根據該構成,於包含加熱步驟之成膜步驟中,處理液固化或硬化。藉此,於基板之上表面形成難溶或不溶於剝離液但可由該剝離液剝離之微粒保持層。According to this configuration, the treatment liquid is solidified or hardened in the film formation step including the heating step. Thereby, a fine particle-retaining layer which is insoluble or insoluble in the peeling liquid but peeled off by the peeling liquid is formed on the upper surface of the substrate.
於處理液固化或硬化時,將微粒與基板分離。經分離之微粒被保持於微粒保持層中。因此,於去除步驟中,可藉由向基板之上表面供給剝離液,而將形成於該基板之上表面之微粒保持層不由剝離液溶解地連同保持於微粒保持層中之微粒自基板之上表面剝離並去除。The particles are separated from the substrate as the treatment liquid solidifies or hardens. The separated particles are held in the particle holding layer. Therefore, in the removing step, the fine particle holding layer formed on the upper surface of the substrate can be dissolved from the peeling liquid together with the fine particles held in the fine particle holding layer from the substrate by supplying the peeling liquid to the upper surface of the substrate. The surface is peeled off and removed.
又,於後續之殘渣去除步驟中,對去除微粒保持層後之基板之上表面,供給具有使形成該微粒保持層之溶質成分溶解之性質的殘渣去除液,藉此,可將微粒保持層之殘渣溶解而自基板之上表面去除。Further, in the subsequent residue removing step, a residue removing liquid having a property of dissolving a solute component forming the fine particle holding layer is supplied to the upper surface of the substrate after removing the fine particle holding layer, whereby the fine particle retaining layer can be provided The residue is dissolved and removed from the upper surface of the substrate.
因此,根據該構成,可藉由將微粒保持層連同保持之微粒自基板之上表面剝離,而以高去除率去除微粒。再者,可抑制微粒保持層之殘渣殘留或再附著於基板之上表面。Therefore, according to this configuration, the fine particles can be removed at a high removal rate by peeling the fine particle-retaining layer together with the retained fine particles from the upper surface of the substrate. Further, it is possible to suppress the residue of the fine particle-retaining layer from remaining or reattaching to the upper surface of the substrate.
於本發明之一實施形態中,上述加熱單元包含向上述基板之下表面供給沸點未達上述變質溫度之熱媒體的熱媒體供給單元。In one embodiment of the present invention, the heating unit includes a heat medium supply unit that supplies a heat medium having a boiling point that does not reach the deterioration temperature to a lower surface of the substrate.
根據該構成,可藉由向基板下表面供給熱媒體之簡易之加熱機構(熱媒體供給單元),執行成膜步驟中之加熱步驟。According to this configuration, the heating step in the film forming step can be performed by a simple heating mechanism (heat medium supply unit) that supplies the heat medium to the lower surface of the substrate.
因此,例如無須於腔室內設置電加熱器等,或將基板搬送至設置有電加熱器等之其他腔室而實施加熱步驟。即,可將基板洗淨裝置之構成簡化。Therefore, for example, it is not necessary to provide an electric heater or the like in the chamber, or to transport the substrate to another chamber provided with an electric heater or the like to perform a heating step. That is, the configuration of the substrate cleaning apparatus can be simplified.
本發明進而提供第2基板洗淨裝置,其包含:處理液供給單元,其向基板之上表面供給包含溶質及具有揮發性之溶劑之處理液;加熱單元,其包含向上述基板之下表面供給熱媒體之熱媒體供給單元,且藉由自上述熱媒體供給單元供給之熱媒體加熱上述基板,使上述溶劑之至少一部分揮發,使上述處理液固化或硬化,而於上述基板之上表面形成微粒保持層;剝離液供給單元,其向上述基板之上表面供給剝離上述微粒保持層之剝離液;殘渣去除液供給單元,其向上述基板之上表面,供給將殘留於剝離並去除上述微粒保持層後之上述基板之上表面之殘渣去除的殘渣去除液;及控制器,其控制上述處理液供給單元、上述加熱單元、上述剝離液供給單元、及上述殘渣去除液供給單元;且上述殘渣去除液對上述微粒保持層所含之上述溶質即溶質成分具有溶解性。上述控制器經編程為執行以下步驟:處理液供給步驟,其向上述基板之上表面供給上述處理液;成膜步驟,其藉由自供給至上述基板之上表面之上述處理液中使上述溶劑之至少一部分揮發,且將上述處理液加熱至未達上述熱媒體之沸點之溫度,而於上述基板之上表面形成上述微粒保持層;去除步驟,其向上述基板之上表面供給上述剝離液,而自上述基板之上表面剝離並去除上述微粒保持層;及殘渣去除步驟,其向上述基板之上表面供給上述殘渣去除液,而將殘留於去除上述微粒保持層後之上述基板之上表面之殘渣去除。Further, the present invention provides a second substrate cleaning apparatus including: a processing liquid supply unit that supplies a processing liquid containing a solute and a volatile solvent to an upper surface of the substrate; and a heating unit including the lower surface of the substrate a heat medium supply unit for heat medium, wherein the substrate is heated by a heat medium supplied from the heat medium supply unit to volatilize at least a part of the solvent, and the treatment liquid is solidified or cured to form particles on the surface of the substrate. a release layer supply unit that supplies a peeling liquid that peels off the fine particle holding layer onto the upper surface of the substrate; and a residue removing liquid supply unit that supplies the remaining surface to the substrate and removes the fine particle holding layer a residue removing liquid for removing the residue on the upper surface of the substrate; and a controller for controlling the processing liquid supply unit, the heating unit, the stripping liquid supply unit, and the residue removing liquid supply unit; and the residue removing liquid The solute component, which is the solute contained in the fine particle-retaining layer, has solubility. The controller is programmed to perform the following steps: a treatment liquid supply step of supplying the treatment liquid to the upper surface of the substrate; and a film formation step of causing the solvent to be supplied from the treatment liquid supplied to the upper surface of the substrate At least a part of the volatilization, and heating the treatment liquid to a temperature that does not reach the boiling point of the heat medium, forming the fine particle holding layer on the upper surface of the substrate; and removing the step of supplying the stripping liquid to the upper surface of the substrate, And removing the fine particle holding layer from the upper surface of the substrate; and a residue removing step of supplying the residue removing liquid to the upper surface of the substrate, and remaining on the upper surface of the substrate after removing the fine particle holding layer The residue is removed.
根據該構成,於包含加熱步驟之成膜步驟中,處理液固化或硬化,而於基板之上表面形成可由該剝離液剝離之微粒保持層。According to this configuration, in the film forming step including the heating step, the treatment liquid is solidified or hardened, and a fine particle-retaining layer which can be peeled off from the peeling liquid is formed on the upper surface of the substrate.
於處理液固化或硬化時,將微粒與基板分離。經分離之微粒被保持於微粒保持層中。因此,於去除步驟中,可藉由向基板之上表面供給剝離液,而將形成於該基板之上表面之微粒保持層連同保持於該微粒保持層中之微粒自基板之上表面剝離並去除。The particles are separated from the substrate as the treatment liquid solidifies or hardens. The separated particles are held in the particle holding layer. Therefore, in the removing step, the fine particle holding layer formed on the upper surface of the substrate and the fine particles held in the fine particle holding layer are peeled off from the upper surface of the substrate and removed by supplying the peeling liquid to the upper surface of the substrate. .
又,於後續之殘渣去除步驟中,對去除微粒保持層後之基板之上表面,供給具有使形成該微粒保持層之溶質成分溶解之性質的殘渣去除液,藉此,可將微粒保持層之殘渣溶解而自基板之上表面去除。Further, in the subsequent residue removing step, a residue removing liquid having a property of dissolving a solute component forming the fine particle holding layer is supplied to the upper surface of the substrate after removing the fine particle holding layer, whereby the fine particle retaining layer can be provided The residue is dissolved and removed from the upper surface of the substrate.
因此,根據該構成,可藉由將微粒保持層連同保持之微粒自基板之上表面剝離,而以高去除率去除微粒。再者,可抑制微粒保持層之殘渣殘留或再附著於基板之上表面。Therefore, according to this configuration, the fine particles can be removed at a high removal rate by peeling the fine particle-retaining layer together with the retained fine particles from the upper surface of the substrate. Further, it is possible to suppress the residue of the fine particle-retaining layer from remaining or reattaching to the upper surface of the substrate.
且,根據該構成,可藉由向基板之下表面供給熱媒體之簡易之加熱機構(熱媒體供給單元),執行成膜步驟中之加熱步驟。Further, according to this configuration, the heating step in the film forming step can be performed by a simple heating means (heat medium supply means) for supplying a heat medium to the lower surface of the substrate.
因此,例如無須於腔室內設置電加熱器等,或將基板搬送至設置有電加熱器等之其他腔室而實施加熱步驟。即,亦可將基板洗淨裝置之構成簡化。Therefore, for example, it is not necessary to provide an electric heater or the like in the chamber, or to transport the substrate to another chamber provided with an electric heater or the like to perform a heating step. That is, the configuration of the substrate cleaning apparatus can also be simplified.
本發明提供第3基板洗淨裝置,其包含:處理液供給單元,其向基板之上表面供給包含溶質及具有揮發性之溶劑之處理液;加熱單元,其加熱上述基板,使上述溶劑之至少一部分揮發,藉此使上述處理液固化或硬化,而於上述基板之上表面形成微粒保持層;剝離液供給單元,其向上述基板之上表面供給剝離上述微粒保持層之剝離液;殘渣去除液供給單元,其向上述基板之上表面,供給將殘留於剝離並去除上述微粒保持層後之上述基板之上表面之殘渣去除的殘渣去除液;及控制器,其控制上述處理液供給單元、上述加熱單元、上述剝離液供給單元、及上述殘渣去除液供給單元。上述殘渣去除液對上述微粒保持層所含之上述溶質即溶質成分具有溶解性。上述控制器經編程為執行以下步驟:處理液供給步驟,其向上述基板之上表面供給上述處理液;成膜步驟,其藉由自供給至上述基板之上表面之上述處理液中使上述溶劑之至少一部分揮發,且將上述處理液加熱至未達上述溶劑之沸點之溫度,而於上述基板之上表面形成上述微粒保持層;去除步驟,其向上述基板之上表面供給上述剝離液,而自上述基板之上表面剝離並去除上述微粒保持層;及殘渣去除步驟,其向上述基板之上表面上述殘渣去除液,而將殘留於去除上述微粒保持層後之上述基板之上表面之殘渣去除。The present invention provides a third substrate cleaning apparatus including: a processing liquid supply unit that supplies a processing liquid containing a solute and a volatile solvent to an upper surface of the substrate; and a heating unit that heats the substrate to at least the solvent a part of the volatilization, whereby the treatment liquid is solidified or hardened, and a fine particle-retaining layer is formed on the upper surface of the substrate; and a peeling liquid supply unit supplies the peeling liquid for peeling off the fine particle-retaining layer to the upper surface of the substrate; the residue removing liquid a supply unit that supplies a residue removing liquid that removes residues remaining on the surface of the substrate remaining after peeling off and removing the fine particle holding layer, and a controller that controls the processing liquid supply unit and the above The heating unit, the peeling liquid supply unit, and the residue removing liquid supply unit. The residue removal liquid has solubility in the solute component which is the solute contained in the fine particle-retaining layer. The controller is programmed to perform the following steps: a treatment liquid supply step of supplying the treatment liquid to the upper surface of the substrate; and a film formation step of causing the solvent to be supplied from the treatment liquid supplied to the upper surface of the substrate At least a part of the volatilization, and heating the treatment liquid to a temperature not reaching the boiling point of the solvent, forming the fine particle retaining layer on the upper surface of the substrate; and removing the step of supplying the stripping liquid to the upper surface of the substrate Removing and removing the fine particle-retaining layer from the upper surface of the substrate; and a residue removing step of removing the residue from the upper surface of the substrate after removing the residue-retaining layer .
根據該構成,於包含加熱步驟之成膜步驟中,處理液固化或硬化。藉此於基板之上表面形成可由剝離液剝離之微粒保持層。According to this configuration, the treatment liquid is solidified or hardened in the film formation step including the heating step. Thereby, a particle holding layer which can be peeled off by the peeling liquid is formed on the upper surface of the substrate.
於處理液固化或硬化時,將微粒與基板分離。經分離之微粒被保持於微粒保持層中。因此,於去除步驟中,可藉由向基板之上表面供給剝離液,而將形成於該基板之上表面之微粒保持層連同保持於該微粒保持層中之微粒自基板之上表面剝離並去除。The particles are separated from the substrate as the treatment liquid solidifies or hardens. The separated particles are held in the particle holding layer. Therefore, in the removing step, the fine particle holding layer formed on the upper surface of the substrate and the fine particles held in the fine particle holding layer are peeled off from the upper surface of the substrate and removed by supplying the peeling liquid to the upper surface of the substrate. .
又,於後續之殘渣去除步驟中,對去除微粒保持層後之基板之上表面,供給具有使形成該微粒保持層之溶質成分溶解之性質的殘渣去除液,藉此,可將微粒保持層之殘渣溶解而自基板之上表面去除。Further, in the subsequent residue removing step, a residue removing liquid having a property of dissolving a solute component forming the fine particle holding layer is supplied to the upper surface of the substrate after removing the fine particle holding layer, whereby the fine particle retaining layer can be provided The residue is dissolved and removed from the upper surface of the substrate.
因此,根據該構成,可藉由將微粒保持層連同保持之微粒自基板之上表面剝離,而以高去除率去除微粒。再者,可抑制微粒保持層之殘渣殘留或再附著於基板之上表面。Therefore, according to this configuration, the fine particles can be removed at a high removal rate by peeling the fine particle-retaining layer together with the retained fine particles from the upper surface of the substrate. Further, it is possible to suppress the residue of the fine particle-retaining layer from remaining or reattaching to the upper surface of the substrate.
且,根據該構成,可使溶劑殘留於在成膜步驟中之加熱步驟加熱後之微粒保持層中。因此,於後續之去除步驟中,可藉由殘留於微粒保持層中之溶劑、與被供給之剝離液之相互作用,而容易地將微粒保持層自基板之上表面剝離。即,可藉由使剝離液浸透於微粒保持層中並使其到達與基板之界面,而使微粒保持層自基板之上表面浮起並被剝離。Further, according to this configuration, the solvent can be left in the fine particle-retaining layer heated in the heating step in the film forming step. Therefore, in the subsequent removal step, the fine particle-retaining layer can be easily peeled off from the upper surface of the substrate by the interaction of the solvent remaining in the fine particle-retaining layer and the supplied peeling liquid. That is, the fine particle holding layer can be floated from the upper surface of the substrate and peeled off by allowing the peeling liquid to permeate into the fine particle holding layer and reaching the interface with the substrate.
本發明中之上述或進而其他之目的、特徵及效果,可藉由參照隨附圖式並根據如下所述之實施形態之說明而明瞭。The above and other objects, features, and advantages of the invention will be apparent from the description and appended claims appended claims
<第1實施形態><First embodiment>
圖1係顯示本發明之第1實施形態之基板洗淨裝置1之佈局之圖解俯視圖。基板洗淨裝置1為逐片洗淨矽晶圓等之基板W之單片式裝置。於本實施形態中,基板W為圓板狀之基板。Fig. 1 is a schematic plan view showing the layout of a substrate cleaning apparatus 1 according to a first embodiment of the present invention. The substrate cleaning device 1 is a one-chip device in which a substrate W such as a wafer is washed one by one. In the present embodiment, the substrate W is a disk-shaped substrate.
基板洗淨裝置1包含:洗淨基板W之複數個處理單元2;裝載器LP,其供載置收容要以處理單元2洗淨之複數片基板W之載具C;搬送機器人IR及CR,其等於裝載器LP與處理單元2之間搬送基板W;及控制器3,其控制基板洗淨裝置1。The substrate cleaning apparatus 1 includes a plurality of processing units 2 for cleaning the substrate W, and a loader LP for carrying a carrier C for accommodating a plurality of substrates W to be cleaned by the processing unit 2; and transporting the robots IR and CR, This is equivalent to transporting the substrate W between the loader LP and the processing unit 2; and a controller 3 that controls the substrate cleaning device 1.
搬送機器人IR於載具C與搬送機器人CR之間搬送基板W。搬送機器人CR於搬送機器人IR與處理單元2之間搬送基板W。複數個處理單元2例如具有同樣之構成。The transport robot IR transports the substrate W between the carrier C and the transfer robot CR. The transport robot CR transports the substrate W between the transport robot IR and the processing unit 2 . The plurality of processing units 2 have the same configuration, for example.
圖2係顯示基板洗淨裝置1中具備之處理單元2之概略構成之模式剖視圖。FIG. 2 is a schematic cross-sectional view showing a schematic configuration of the processing unit 2 provided in the substrate cleaning apparatus 1.
處理單元2包含:旋轉夾盤4,其以水平之姿勢保持一片基板W,且使基板W繞通過基板W之中心之鉛直旋轉軸線A1旋轉;處理液供給噴嘴5,其向保持於該旋轉夾盤4之基板W之上表面,供給包含溶質及具有揮發性之溶劑之處理液;及剝離液供給噴嘴6,其向保持於旋轉夾盤4之基板W之上表面供給剝離液。處理液供給噴嘴5為處理液供給單元之一例。剝離液供給噴嘴6為剝離液供給單元之一例。The processing unit 2 includes a rotating chuck 4 that holds a substrate W in a horizontal posture and rotates the substrate W about a vertical rotation axis A1 passing through the center of the substrate W; a processing liquid supply nozzle 5 that is held in the rotation clamp A processing liquid containing a solute and a volatile solvent is supplied to the upper surface of the substrate W of the disk 4, and a peeling liquid supply nozzle 6 for supplying the peeling liquid to the upper surface of the substrate W held by the rotary chuck 4. The treatment liquid supply nozzle 5 is an example of a treatment liquid supply unit. The peeling liquid supply nozzle 6 is an example of a peeling liquid supply unit.
旋轉夾盤4包含:夾盤銷8、旋轉底座9、旋轉軸10、及使基板W繞旋轉軸線A1旋轉之旋轉馬達11。The rotary chuck 4 includes a chuck pin 8, a rotary base 9, a rotary shaft 10, and a rotary motor 11 that rotates the substrate W about the rotation axis A1.
旋轉軸10沿著旋轉軸線A1朝鉛直方向延伸,於本實施形態中為中空軸。旋轉軸10之上端與旋轉底座9之下表面之中央結合。旋轉底座9具有沿著水平方向之圓盤形狀。於旋轉底座9之上表面之周緣部,將用以固持基板W之複數根夾盤銷8於周方向上空出間隔地配置。旋轉馬達11包含例如藉由向旋轉軸10賦予旋轉力而使基板W、夾盤銷8、旋轉底座9及旋轉軸10繞旋轉軸線A1一體旋轉的電動馬達。The rotating shaft 10 extends in the vertical direction along the rotation axis A1, and is a hollow shaft in the present embodiment. The upper end of the rotating shaft 10 is coupled to the center of the lower surface of the rotating base 9. The rotating base 9 has a disk shape along the horizontal direction. At a peripheral portion of the upper surface of the rotary base 9, a plurality of chuck pins 8 for holding the substrate W are disposed at intervals in the circumferential direction. The rotary motor 11 includes, for example, an electric motor that integrally rotates the substrate W, the chuck pin 8, the rotary base 9, and the rotary shaft 10 about the rotation axis A1 by imparting a rotational force to the rotary shaft 10.
處理液供給噴嘴5藉由第1噴嘴移動機構12例如於水平方向(垂直於旋轉軸線A1之方向)移動。處理液供給噴嘴5可藉由向水平方向移動,而於中央位置、退避位置之間移動。當處理液供給噴嘴5位於中央位置時,與基板W之上表面之旋轉中心位置對向。當處理液供給噴嘴5位於退避位置時,不與基板W之上表面對向。基板W之上表面之旋轉中心位置是指基板W上表面之與旋轉軸線A1交叉之位置。不與基板W之上表面對向之退避位置是指俯視時旋轉底座9外側之位置。於處理液供給噴嘴5連接有處理液供給管13。於處理液供給管13介裝有開閉其流道之閥14。The processing liquid supply nozzle 5 is moved by, for example, the first nozzle moving mechanism 12 in the horizontal direction (perpendicular to the rotation axis A1). The treatment liquid supply nozzle 5 is movable between the center position and the retracted position by moving in the horizontal direction. When the processing liquid supply nozzle 5 is at the center position, it is opposed to the rotational center position of the upper surface of the substrate W. When the processing liquid supply nozzle 5 is located at the retracted position, it does not face the upper surface of the substrate W. The position of the center of rotation of the upper surface of the substrate W means a position at which the upper surface of the substrate W intersects with the rotation axis A1. The retracted position that does not face the upper surface of the substrate W refers to the position outside the rotating base 9 in plan view. The processing liquid supply pipe 13 is connected to the processing liquid supply nozzle 5. The treatment liquid supply pipe 13 is provided with a valve 14 that opens and closes its flow path.
剝離液供給噴嘴6藉由第2噴嘴移動機構15例如於水平方向(垂直於旋轉軸線A1之方向)上移動。剝離液供給噴嘴6可藉由向水平方向移動,而於中央位置、退避位置之間移動。當剝離液供給噴嘴6位於中央位置時,與基板W之上表面之旋轉中心位置對向。當剝離液供給噴嘴6位於退避位置時,不與基板W之上表面對向。於剝離液供給噴嘴6連接有作為第1剝離液之DIW之供給管16。於供給管16介裝有開閉其流道之閥17、18。The peeling liquid supply nozzle 6 is moved by the second nozzle moving mechanism 15 in the horizontal direction (the direction perpendicular to the rotation axis A1), for example. The peeling liquid supply nozzle 6 is movable between the center position and the retracted position by moving in the horizontal direction. When the peeling liquid supply nozzle 6 is at the center position, it is opposed to the rotational center position of the upper surface of the substrate W. When the peeling liquid supply nozzle 6 is located at the retracted position, it does not face the upper surface of the substrate W. A supply pipe 16 as a DIW of the first peeling liquid is connected to the peeling liquid supply nozzle 6. The supply pipe 16 is provided with valves 17, 18 for opening and closing its flow passage.
又,於剝離液供給噴嘴6進而連接有作為第2剝離液之SC1液、即氨及過氧化氫之水溶液之供給管19。供給管19連接於供給管16之較閥17更下游側、且較閥18更上游側。於供給管19介裝有開閉其流道之閥20。Further, a supply pipe 19 as an SC1 liquid of the second peeling liquid, that is, an aqueous solution of ammonia and hydrogen peroxide is further connected to the peeling liquid supply nozzle 6. The supply pipe 19 is connected to the downstream side of the supply pipe 16 from the valve 17, and further upstream than the valve 18. A valve 20 for opening and closing the flow path is interposed in the supply pipe 19.
處理單元2包含:處理杯40,其盛接自保持於旋轉夾盤4之基板W之上表面及下表面向基板W外排除之液體;及對向構件50,其自上方與保持於旋轉夾盤4之基板W對向。The processing unit 2 includes: a processing cup 40 that receives liquid from the upper surface of the substrate W held by the rotating chuck 4 and a surface of the lower surface facing the substrate W; and a facing member 50 that is held from the top and held in the rotating clamp The substrate W of the disk 4 is opposed.
處理杯40包含:複數個防擋41,其攔接自保持於旋轉夾盤4之基板W向外側飛散之液體;複數個杯42,其攔接由複數個防擋41向下方引導之液體;及圓筒狀之外壁構件43,其包圍複數個防擋41與複數個杯42。於本實施形態中,顯示設置有2個防擋41(第1防擋41A及第2防擋41B)、及2個杯42(第1杯42A及第2杯42B)之例。The processing cup 40 includes: a plurality of blocking members 41 that intercept the liquid scattered from the substrate W held by the rotating chuck 4 to the outside; a plurality of cups 42 that intercept the liquid guided downward by the plurality of blocking members 41; And a cylindrical outer wall member 43 that surrounds the plurality of retainers 41 and the plurality of cups 42. In the present embodiment, an example in which two anti-locks 41 (the first anti-block 41A and the second anti-block 41B) and two cups 42 (the first cup 42A and the second cup 42B) are provided are displayed.
第1杯42A及第2杯42B各自具有朝上開放之槽狀之形態。第1防擋41A包圍旋轉底座9。第2防擋41B於較第1防擋41A更為徑向外側包圍旋轉底座9。第1杯42A攔接由第1防擋41A向下方引導之液體。第2杯42B與第1防擋41A一體形成,且攔接由第2防擋41B引導至下方之液體。Each of the first cup 42A and the second cup 42B has a groove shape that is open upward. The first guard 41A surrounds the rotating base 9. The second guard 41B surrounds the rotating base 9 on the radially outer side of the first guard 41A. The first cup 42A blocks the liquid guided downward by the first guard 41A. The second cup 42B is integrally formed with the first guard 41A, and intercepts the liquid guided to the lower side by the second guard 41B.
處理單元2包含分別使第1防擋41A及第2防擋41B升降之防擋升降機構44。防擋升降機構44使第1防擋41A於下位置與上位置之間升降。防擋升降機構44使第2防擋41B於下位置與上位置之間升降。第1防擋41A於上位置與下位置間之可動範圍之全域中,位於基板W之側方。第2防擋41B於上位置與下位置間之可動範圍之全域中,位於基板W之側方。可動範圍包含上位置及下位置。The processing unit 2 includes an anti-lifting and lowering mechanism 44 that elevates and lowers the first guard 41A and the second guard 41B, respectively. The anti-sliding mechanism 44 raises and lowers the first guard 41A between the lower position and the upper position. The anti-stop mechanism 44 raises and lowers the second guard 41B between the lower position and the upper position. The first guard 41A is located on the side of the substrate W in the entire range of the movable range between the upper position and the lower position. The second guard 41B is located on the side of the substrate W in the entire range of the movable range between the upper position and the lower position. The movable range includes an upper position and a lower position.
於第1防擋41A及第2防擋41B皆位於上位置時,自基板W飛散之液體由第1防擋41A接收。於第1防擋41A位於下位置且第2防擋41B位於上位置時,自基板W飛散之液體由第2防擋41B接收。When both the first guard 41A and the second guard 41B are in the upper position, the liquid scattered from the substrate W is received by the first guard 41A. When the first guard 41A is in the lower position and the second guard 41B is in the upper position, the liquid scattered from the substrate W is received by the second guard 41B.
防擋升降機構44例如包含:第1滾珠螺桿機構(未圖示),其安裝於第1防擋41A;第1馬達(未圖示),其對第1滾珠螺桿機構賦予驅動力;第2滾珠螺桿機構(未圖示),其安裝於第2防擋41B;及第2馬達(未圖示),其對第2滾珠螺桿機構賦予驅動力。The anti-stop mechanism 44 includes, for example, a first ball screw mechanism (not shown) attached to the first guard 41A, and a first motor (not shown) that applies a driving force to the first ball screw mechanism; A ball screw mechanism (not shown) is attached to the second guard 41B and a second motor (not shown) that applies a driving force to the second ball screw mechanism.
對向構件50形成為具有與基板W大致相同之徑或其以上之徑之圓板狀,於旋轉夾盤4之上方大致水平配置。對向構件50具有與基板W之上表面對向之對向面50a。The opposing member 50 is formed in a disk shape having a diameter substantially equal to or larger than the substrate W, and is disposed substantially horizontally above the rotating chuck 4. The opposing member 50 has an opposing surface 50a opposite to the upper surface of the substrate W.
於對向構件50中與對向面50a相反側之面固定有中空軸51。於對向構件50中包含俯視時與旋轉軸線A1重疊之位置之部分,形成有上下貫通對向構件50且與中空軸51之內部空間連通之連通孔。A hollow shaft 51 is fixed to a surface of the opposing member 50 opposite to the opposing surface 50a. In the portion of the opposing member 50 that includes the position overlapping the rotation axis A1 in a plan view, a communication hole that vertically penetrates the opposing member 50 and communicates with the internal space of the hollow shaft 51 is formed.
對向構件50係將對向構件50之對向面50a與基板W之上表面間之空間內之氣體環境與該空間外部之氣體環境阻斷。因此,對向構件50亦被稱為阻斷板。The opposing member 50 blocks the gaseous environment in the space between the opposing surface 50a of the opposing member 50 and the upper surface of the substrate W from the gaseous environment outside the space. Therefore, the opposing member 50 is also referred to as a blocking plate.
處理單元2進而包含驅動對向構件50之升降之對向構件升降機構52。對向構件升降機構52可使對向構件50位於自下位置(後述之圖5H所示之位置)至上位置(後述之圖5A所示之位置)之任意位置(高度)。下位置是指對向構件50之可動範圍內對向構件50之對向面50a最接近基板W之位置。上位置是指對向構件50之可動範圍內對向構件50之對向面50a距離基板W最遠之位置(退避位置)。於對向構件50位於上位置時,處理液供給噴嘴5及剝離液供給噴嘴6可進入對向構件50之對向面50a與基板W之上表面之間。The processing unit 2 further includes an opposing member lifting mechanism 52 that drives the lifting of the opposing member 50. The opposing member lifting and lowering mechanism 52 can position the opposing member 50 at any position (height) from the lower position (the position shown in FIG. 5H described later) to the upper position (the position shown in FIG. 5A to be described later). The lower position refers to a position where the opposing surface 50a of the opposing member 50 is closest to the substrate W in the movable range of the opposing member 50. The upper position refers to a position (retracted position) farthest from the substrate W in the opposing surface 50a of the opposing member 50 in the movable range of the opposing member 50. When the opposing member 50 is in the upper position, the processing liquid supply nozzle 5 and the peeling liquid supply nozzle 6 can enter between the opposing surface 50a of the opposing member 50 and the upper surface of the substrate W.
對向構件升降機構52例如包含:滾珠螺桿機構(未圖示),其安裝於支持中空軸51之支持構件(未圖示);及電動馬達(未圖示),其對該滾珠螺桿機構賦予驅動力。The opposing member lifting and lowering mechanism 52 includes, for example, a ball screw mechanism (not shown) attached to a supporting member (not shown) that supports the hollow shaft 51, and an electric motor (not shown) that imparts the ball screw mechanism to the ball screw mechanism. Driving force.
處理單元2進而包含:殘渣去除液供給噴嘴7,其對保持於旋轉夾盤4之基板W之上表面供給殘渣去除液;氣體供給噴嘴60,其對保持於旋轉夾盤4之基板W之上表面與對向構件50之對向面50a間之空間供給氣體;及清洗液供給噴嘴65,其對保持於旋轉夾盤4之基板W之上表面供給清洗液。殘渣去除液供給噴嘴7為殘渣去除液供給單元之一例。氣體供給噴嘴60為氣體供給單元之一例。清洗液供給噴嘴65為清洗液供給單元之一例。The processing unit 2 further includes a residue removing liquid supply nozzle 7 that supplies a residue removing liquid to the upper surface of the substrate W held by the rotating chuck 4, and a gas supply nozzle 60 that is held on the substrate W of the rotating chuck 4. The surface is supplied with a gas to the space between the opposing faces 50a of the opposing member 50, and the cleaning liquid supply nozzle 65 supplies the cleaning liquid to the upper surface of the substrate W held by the rotary chuck 4. The residue removal liquid supply nozzle 7 is an example of a residue removal liquid supply unit. The gas supply nozzle 60 is an example of a gas supply unit. The cleaning liquid supply nozzle 65 is an example of a cleaning liquid supply unit.
於殘渣去除液供給噴嘴7連接有殘渣去除液供給管22。於殘渣去除液供給管22介裝有開閉殘渣去除液供給管22內之流道之閥23。於氣體供給噴嘴60連接有氣體供給管61。於氣體供給管61介裝有開閉氣體供給管61內之流道之閥62。於清洗液供給噴嘴65連接有清洗液供給管66。於清洗液供給管66介裝有開閉清洗液供給管66內之流道之閥67。A residue removal liquid supply pipe 22 is connected to the residue removal liquid supply nozzle 7. The residue removal liquid supply pipe 22 is provided with a valve 23 for opening and closing the flow path in the residue removal liquid supply pipe 22. A gas supply pipe 61 is connected to the gas supply nozzle 60. A valve 62 that opens and closes a flow path in the gas supply pipe 61 is interposed in the gas supply pipe 61. A cleaning liquid supply pipe 66 is connected to the cleaning liquid supply nozzle 65. A valve 67 for opening and closing the flow path in the cleaning liquid supply pipe 66 is interposed in the cleaning liquid supply pipe 66.
將殘渣去除液供給噴嘴7、氣體供給噴嘴60及清洗液供給噴嘴65共同地收容於插通於中空軸51之噴嘴收容構件53。殘渣去除液供給噴嘴7、氣體供給噴嘴60及清洗液供給噴嘴65之噴出口自噴嘴收容構件53之下端部露出。噴嘴收容構件53之下端部與保持於旋轉夾盤4之基板W之上表面之中央區域對向。The residue removal liquid supply nozzle 7, the gas supply nozzle 60, and the cleaning liquid supply nozzle 65 are collectively housed in the nozzle housing member 53 that is inserted into the hollow shaft 51. The discharge ports of the residue removal liquid supply nozzle 7, the gas supply nozzle 60, and the cleaning liquid supply nozzle 65 are exposed from the lower end portion of the nozzle housing member 53. The lower end portion of the nozzle accommodating member 53 faces the central portion of the upper surface of the substrate W held by the rotary chuck 4.
處理單元2進而包含:熱媒體供給噴嘴24,其對保持於旋轉夾盤4之基板W之背面(下表面)供給加熱該基板W之熱媒體。熱媒體供給噴嘴24對保持於夾盤銷8及旋轉底座9之基板W自該基板W之背面側進行加熱,為用以於基板W之上表面形成微粒保持層之加熱單元之一例。The processing unit 2 further includes a heat medium supply nozzle 24 that supplies a heat medium for heating the substrate W to the back surface (lower surface) of the substrate W held by the spin chuck 4. The heat medium supply nozzle 24 heats the substrate W held by the chuck pin 8 and the rotary base 9 from the back side of the substrate W, and is an example of a heating unit for forming a fine particle holding layer on the upper surface of the substrate W.
熱媒體供給噴嘴24藉由將熱媒體供給至基板W之背面之大致整面而加熱基板W上表面之處理液。熱媒體供給噴嘴24插通旋轉軸10,且於上端具有面向基板W之背面中心之噴出口24a。熱媒體之一例為溫純水。The heat medium supply nozzle 24 heats the processing liquid on the upper surface of the substrate W by supplying the heat medium to substantially the entire surface of the back surface of the substrate W. The heat medium supply nozzle 24 is inserted through the rotary shaft 10, and has a discharge port 24a facing the center of the back surface of the substrate W at the upper end. One example of thermal media is warm water.
熱媒體供給噴嘴24於本實施形態中自噴出口24a朝向旋轉狀態之基板W之背面之中心位置供給熱媒體。所供給之熱媒體因離心力之作用而遍佈於基板W背面之大致整面。藉此加熱基板W及基板W上表面之處理液。基板W背面之旋轉中心位置為與基板W背面之旋轉軸線A1交叉之位置。於熱媒體供給噴嘴24連接有熱媒體供給管25。於熱媒體供給管25介裝有開閉熱媒體供給管25內之流道之閥26。In the present embodiment, the heat medium supply nozzle 24 supplies the heat medium from the discharge port 24a toward the center of the back surface of the substrate W in the rotated state. The supplied heat medium is spread over substantially the entire surface of the back surface of the substrate W due to the centrifugal force. Thereby, the substrate W and the processing liquid on the upper surface of the substrate W are heated. The center of rotation of the back surface of the substrate W is a position intersecting the rotation axis A1 of the back surface of the substrate W. A heat medium supply pipe 25 is connected to the heat medium supply nozzle 24. A valve 26 for opening and closing the flow path in the heat medium supply pipe 25 is interposed in the heat medium supply pipe 25.
圖3係顯示基板洗淨裝置1之主要部分之電性構成之方塊圖。Fig. 3 is a block diagram showing the electrical configuration of the main part of the substrate cleaning apparatus 1.
基板洗淨裝置1包含控制器3。控制器3具備微電腦,根據特定之控制程式控制基板洗淨裝置1中具備之控制對象。具體而言,控制器3包含處理器(CPU)3A、及儲存有控制程式之記憶體3B,且構成為藉由處理器3A執行控制程式而執行用於基板處理之各種控制。The substrate cleaning device 1 includes a controller 3. The controller 3 is provided with a microcomputer, and controls the control object provided in the substrate cleaning device 1 in accordance with a specific control program. Specifically, the controller 3 includes a processor (CPU) 3A and a memory 3B storing a control program, and is configured to execute various controls for substrate processing by executing a control program by the processor 3A.
尤其,控制器3經編程為控制旋轉馬達11、第1噴嘴移動機構12、第2噴嘴移動機構15、對向構件升降機構52、防擋升降機構44、閥14、17、18、20、23、26、62、67。In particular, the controller 3 is programmed to control the rotary motor 11, the first nozzle moving mechanism 12, the second nozzle moving mechanism 15, the opposing member lifting mechanism 52, the anti-lifting mechanism 44, and the valves 14, 17, 18, 20, 23 , 26, 62, 67.
圖4係用以說明處理單元2之基板洗淨之一例之流程圖。圖5A~圖5H為用以說明基板洗淨之一例之情形之圖解剖視圖。圖6A及圖6B係用以說明基板洗淨之一例之微粒保持層29之情形的圖解剖視圖。4 is a flow chart for explaining an example of substrate cleaning of the processing unit 2. 5A to 5H are diagrams for explaining an example of a case where the substrate is washed. 6A and 6B are diagrams for explaining the state of the particle holding layer 29 of one example of the substrate cleaning.
於處理單元2之基板洗淨中,首先,執行處理液供給步驟(步驟S1)。於處理液供給步驟中,首先,控制器3驅動旋轉馬達11,使旋轉底座9旋轉而開始基板W之旋轉。於處理液供給步驟中,旋轉底座9以基板旋轉速度即特定之處理液供給速度旋轉。處理液供給速度為例如10 rpm~數10 rpm。且,控制器3控制對向構件升降機構52,將對向構件50配置於上位置。接著,控制器3控制防擋升降機構44,將第1防擋41A及第2防擋41B配置於上位置。In the substrate cleaning of the processing unit 2, first, a processing liquid supply step (step S1) is performed. In the processing liquid supply step, first, the controller 3 drives the rotary motor 11 to rotate the rotary base 9 to start the rotation of the substrate W. In the processing liquid supply step, the rotary base 9 is rotated at a substrate rotation speed, that is, a specific processing liquid supply speed. The processing liquid supply rate is, for example, 10 rpm to several 10 rpm. Further, the controller 3 controls the opposing member lifting and lowering mechanism 52 to arrange the opposing member 50 at the upper position. Next, the controller 3 controls the anti-lifting and lowering mechanism 44 to arrange the first anti-stop 41A and the second anti-lock 41B at the upper position.
接著,控制器3控制第1噴嘴移動機構12,將處理液供給噴嘴5配置於基板W上方之中央位置。且,控制器3將閥14打開。藉此,如圖5A所示,自處理液供給噴嘴5朝向旋轉狀態之基板W之上表面供給處理液27。被供給至基板W上表面之處理液27因離心力之作用而遍佈於基板W之上表面之大致整面。Next, the controller 3 controls the first nozzle moving mechanism 12 to arrange the processing liquid supply nozzle 5 at a central position above the substrate W. And, the controller 3 opens the valve 14. Thereby, as shown in FIG. 5A, the processing liquid 27 is supplied from the processing liquid supply nozzle 5 toward the upper surface of the substrate W in the rotating state. The treatment liquid 27 supplied to the upper surface of the substrate W is spread over substantially the entire surface of the upper surface of the substrate W by the action of centrifugal force.
於供給一定時間之處理液後,執行使處理液固化或硬化,而於基板W之上表面形成微粒保持層之成膜步驟(步驟S2)。於成膜步驟中,首先,控制器3將閥14關閉,使來自處理液供給噴嘴5之處理液27之供給停止。且,控制器3使處理液供給噴嘴5向退避位置移動。After the treatment liquid is supplied for a predetermined period of time, a film forming step of forming a fine particle-retaining layer on the upper surface of the substrate W is performed by solidifying or hardening the treatment liquid (step S2). In the film forming step, first, the controller 3 closes the valve 14 to stop the supply of the processing liquid 27 from the processing liquid supply nozzle 5. Further, the controller 3 moves the processing liquid supply nozzle 5 to the retracted position.
接著,控制器3控制旋轉馬達11,使旋轉底座9以基板旋轉速度即特定之甩除速度旋轉(甩除步驟、步驟S2a)。甩除速度為例如300 rpm~1500 rpm。藉此,如圖5B所示,首先,將供給至基板W上表面之處理液27自基板W上表面之周緣排出,接著,揮發性溶劑之揮發進展。Next, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific erasing speed (the elimination step, step S2a). The removal speed is, for example, 300 rpm to 1500 rpm. As a result, as shown in FIG. 5B, first, the treatment liquid 27 supplied to the upper surface of the substrate W is discharged from the periphery of the upper surface of the substrate W, and then the volatilization of the volatile solvent proceeds.
接著,控制器3控制對向構件升降機構52,使對向構件50自上位置朝向下位置移動。控制器3將閥62打開。藉此,自氣體供給噴嘴60將氮(N2 )氣等氣體供給至對向構件50之對向面50a與基板W上表面之間之空間。接著,控制器3控制旋轉馬達11,使旋轉底座9以基板旋轉速度即特定之加熱時速度旋轉。加熱時速度為例如100 rpm~1500 rpm。於對向構件50到達下位置後,控制器3將閥26打開。藉此,如圖5C所示,朝向旋轉狀態之基板W之背面,自熱媒體供給噴嘴24供給熱媒體28。Next, the controller 3 controls the opposing member lifting mechanism 52 to move the opposing member 50 from the upper position toward the lower position. The controller 3 opens the valve 62. Thereby, a gas such as nitrogen (N 2 ) gas is supplied from the gas supply nozzle 60 to a space between the opposing surface 50a of the opposing member 50 and the upper surface of the substrate W. Next, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific heating speed. The heating speed is, for example, 100 rpm to 1500 rpm. After the opposing member 50 reaches the lower position, the controller 3 opens the valve 26. Thereby, as shown in FIG. 5C, the heat medium 28 is supplied from the heat medium supply nozzle 24 toward the back surface of the substrate W in the rotated state.
被供給之熱媒體28因離心力之作用而遍佈於基板W背面之大致整面。藉此,加熱基板W及基板W上表面之處理液27(加熱步驟、步驟S2b)。The supplied heat medium 28 spreads over substantially the entire surface of the back surface of the substrate W due to the centrifugal force. Thereby, the substrate W and the processing liquid 27 on the upper surface of the substrate W are heated (heating step, step S2b).
接著,揮發性溶劑之揮發進而進展,且處理液27固化或硬化。藉此,形成包含溶質成分之固體狀之膜,即微粒保持層29。又,如圖6A所示,於形成微粒保持層29時,將附著於基板W上表面之微粒30自該基板W分離,並保持於微粒保持層29中。Then, the volatilization of the volatile solvent proceeds, and the treatment liquid 27 is cured or hardened. Thereby, a solid film containing a solute component, that is, a particle holding layer 29, is formed. Further, as shown in FIG. 6A, when the fine particle holding layer 29 is formed, the fine particles 30 adhering to the upper surface of the substrate W are separated from the substrate W and held in the fine particle holding layer 29.
此處,「固化」是指例如伴隨溶劑之揮發,溶質因作用於分子間或原子間之力等而凝固。「硬化」是指例如溶質藉由聚合或交聯等化學變化而凝固。因此,「固化或硬化」表示溶質因各種要因而凝固。另,處理液只要固化或硬化至能保持微粒30之程度即可,無須使溶劑完全揮發。又,形成微粒保持層29之「溶質成分」可為處理液27中所含之溶質本身,亦可為自溶質導出者,例如可作為化學變化之結果而獲得者。Here, "curing" means that, for example, the solute is solidified by a force acting between molecules or between atoms due to volatilization of a solvent. "Curing" means that, for example, a solute is solidified by chemical changes such as polymerization or crosslinking. Therefore, "cure or harden" means that the solute solidifies due to various reasons. Further, the treatment liquid is only required to be cured or hardened to such an extent that the particles 30 can be retained, and it is not necessary to completely evaporate the solvent. Further, the "solute component" forming the fine particle-retaining layer 29 may be the solute itself contained in the treatment liquid 27, or may be derived from the solute, and may be obtained as a result of chemical change, for example.
作為溶質,可使用能溶於任意溶劑、且可於固化或硬化時以將附著於基板W上表面之微粒30自該基板W分離而保持之狀態,形成微粒保持層29的各種樹脂。As the solute, various resins which can be formed into the fine particle holding layer 29 in a state in which the fine particles 30 adhering to the upper surface of the substrate W can be separated from the substrate W and can be dissolved in any solvent and can be cured or cured can be used.
例如,於本實施形態中,作為溶質,可使用具有於加熱至特定之變質溫度以上之前難溶或不溶於水,且藉由加熱至變質溫度以上而變質成水溶性之性質的樹脂(以下有時記載為「感熱水溶性樹脂」)。藉由將感熱水溶性樹脂與後述之水系剝離液加以組合而實施本發明一實施形態之上述洗淨方法。For example, in the present embodiment, as the solute, a resin having a property of being insoluble or insoluble in water before being heated to a specific deterioration temperature or higher and having a property of being water-soluble by heating to a temperature higher than the deterioration temperature can be used (hereinafter It is described as "sensible water-soluble resin"). The above-described cleaning method according to an embodiment of the present invention is carried out by combining a thermosensitive water-soluble resin with a water-based peeling liquid to be described later.
作為感熱水溶性樹脂之具體例,可使用例如藉由加熱至特定之變質溫度以上(例如200℃以上)而分解,使具備極性之官能基露出而顯現出水溶性之樹脂等。As a specific example of the sensible water-soluble resin, for example, a resin which is decomposed by heating to a specific deterioration temperature or higher (for example, 200° C. or higher), and which exhibits a water-soluble resin, is exposed.
於本實施形態中,於成膜步驟中,藉由將處理液加熱至未達感熱水溶性樹脂之變質溫度之溫度,不使該感熱水溶性樹脂變質為水溶性,而於基板W之上表面形成難溶或不溶於水系剝離液之不溶性微粒保持層29。In the present embodiment, in the film forming step, the surface of the substrate W is not deteriorated by heating the treatment liquid to a temperature at which the deterioration temperature of the heat-sensitive water-soluble resin is not reached, so that the heat-sensitive water-soluble resin is not deteriorated to be water-soluble. An insoluble fine particle-retaining layer 29 which is insoluble or insoluble in the aqueous stripping liquid is formed.
為了將處理液加熱至未達感熱水溶性樹脂之變質溫度之溫度,作為熱媒體,使用沸點未達該變質溫度之熱媒體即可。例如,如為變質溫度為180℃之感熱水溶性樹脂,可使用例如DIW(沸點:100℃)等作為熱媒體。In order to heat the treatment liquid to a temperature that does not reach the deterioration temperature of the thermosensitive water-soluble resin, a heat medium having a boiling point not reaching the deterioration temperature may be used as the heat medium. For example, as the thermosensitive water-soluble resin having a deterioration temperature of 180 ° C, for example, DIW (boiling point: 100 ° C) or the like can be used as the heat medium.
另,加熱之溫度進而較佳為未達溶劑之沸點之溫度。藉由將處理液加熱成未達溶劑沸點之溫度,如上文所述,可使溶劑殘留於微粒保持層29中。且,可藉由殘留於微粒保持層29中之溶劑、與剝離液之相互作用,而易於將該微粒保持層29自基板W之上表面剝離。Further, the temperature of the heating is further preferably a temperature which does not reach the boiling point of the solvent. The solvent can be left in the particulate retaining layer 29 by heating the treatment liquid to a temperature that does not reach the boiling point of the solvent, as described above. Further, the fine particle holding layer 29 can be easily peeled off from the upper surface of the substrate W by the solvent remaining in the fine particle holding layer 29 and the interaction with the peeling liquid.
感熱水溶性樹脂如上所述,當加熱至變質溫度以上時會變質為水溶性。因此,對於例如日本專利特開2014-197717號公報所記載之先前方法及美國專利申請案公開第2015/128994號公報說明書所記載之先前方法亦可使用。然而,於實施形態中,對感熱水溶性樹脂特意止於未達變質溫度之加熱,而以維持難溶或不溶於水系剝離液之狀態形成微粒保持層29。因此,無須使微粒30自微粒保持層29脫落,即可將維持塊狀態之微粒保持層29自基板W去除。因此,能以高去除率去除微粒30。As described above, the sensible water-soluble resin is deteriorated to be water-soluble when heated to a temperature higher than the deterioration temperature. For example, the prior method described in the specification of the Japanese Patent Publication No. 2014-197717, and the specification of the US Patent Application Publication No. 2015/128994 can also be used. However, in the embodiment, the heat-sensitive water-soluble resin is intentionally stopped from heating at a temperature that does not reach the deterioration temperature, and the fine particle-retaining layer 29 is formed in a state of maintaining poor solubility or insoluble in the aqueous stripping liquid. Therefore, the particle holding layer 29 in the state of maintaining the block can be removed from the substrate W without removing the particles 30 from the particle holding layer 29. Therefore, the particles 30 can be removed with a high removal rate.
且,於本實施形態中,可將加熱溫度設定為與先前方法相比未達變質溫度之低溫。因此,可進而減少實施洗淨方法時之耗能。詳細而言,由於微粒保持層29之加熱溫度只需未達100℃之加熱,故可使用DIW作為加熱基板W之加熱媒介。另一方面,與本實施形態不同,於將微粒保持層29加熱至100℃以上之構成中,作為加熱媒介,必須使用在高溫下亦不會氣化之液體(例如沸點高於100℃之液體)。因此,由於可將加熱溫度設定為未達變質溫度,而可實現以安全且簡易之構成加熱基板W。Further, in the present embodiment, the heating temperature can be set to a low temperature which is less than the deterioration temperature as compared with the prior art. Therefore, the energy consumption in carrying out the washing method can be further reduced. In detail, since the heating temperature of the fine particle holding layer 29 only needs to be heated up to 100 ° C, DIW can be used as the heating medium for heating the substrate W. On the other hand, unlike the present embodiment, in the configuration in which the fine particle-retaining layer 29 is heated to 100 ° C or higher, it is necessary to use a liquid which does not vaporize at a high temperature as a heating medium (for example, a liquid having a boiling point higher than 100 ° C). ). Therefore, since the heating temperature can be set to a temperature that does not reach the deterioration temperature, it is possible to heat the substrate W in a safe and simple configuration.
作為溶劑,可使用對變質前之感熱水溶性樹脂具有溶解性且具有揮發性之溶劑。此處,「具有揮發性」意指與水相比揮發性較高。作為溶劑,可使用例如PGEE(Propylene Glycol Ethyl Ether:丙二醇乙醚)。As the solvent, a solvent which is soluble and volatile with respect to the sensible water-soluble resin before the deterioration can be used. Here, "having a volatile" means having a higher volatility than water. As the solvent, for example, PGEE (Propylene Glycol Ethyl Ether: propylene glycol ethyl ether) can be used.
使用此種熱媒體28之基板W之加熱(加熱步驟) 係如上所述,以使對向構件50之對向面50a接近基板W之上表面之狀態(例如使對向構件50位於下位置之狀態)進行。The heating (heating step) of the substrate W using such a heat medium 28 is as described above such that the opposing surface 50a of the opposing member 50 is in a state close to the upper surface of the substrate W (for example, the opposing member 50 is positioned at the lower position) Status) proceed.
被供給至基板W之背面之熱媒體28遍佈於基板W背面之大致整面後,因離心力而飛散至基板W外。飛散至基板W外之熱媒體28由第1防擋41A攔接。由第1防擋41A攔接之熱媒體28之一部分會自第1防擋41A彈起。The heat medium 28 supplied to the back surface of the substrate W is spread over the entire surface of the back surface of the substrate W, and is scattered outside the substrate W by centrifugal force. The heat medium 28 scattered outside the substrate W is blocked by the first guard 41A. A portion of the heat medium 28 blocked by the first guard 41A will bounce from the first guard 41A.
對此,於本實施形態中,以使對向構件50之對向面50a接近基板W之上表面之狀態執行加熱步驟。對向構件50係保護基板W之上表面避開自第1防擋41A彈起之熱媒體28。因此,由於可抑制熱媒體28向微粒保持層29之表面附著,故可抑制因來自第1防擋41A之熱媒體28之彈起所引起之微粒。On the other hand, in the present embodiment, the heating step is performed in a state where the opposing surface 50a of the opposing member 50 is brought close to the upper surface of the substrate W. The opposing member 50 protects the upper surface of the substrate W from the heat medium 28 that bounces from the first guard 41A. Therefore, since the adhesion of the heat medium 28 to the surface of the fine particle holding layer 29 can be suppressed, the particles caused by the bounce of the heat medium 28 from the first guard 41A can be suppressed.
再者,於本實施形態中,如上所述,自氣體供給噴嘴60將氣體供給至對向構件50之對向面50a與基板W之上表面之間之空間。被供給至對向構件50之對向面50a與基板W之上表面之間之空間之氣體,形成自基板W上表面之中央區域朝向基板W之上表面周緣移動之氣流。藉由形成自基板W上表面之中央區域朝向基板W之上表面周緣移動之氣流,可將自第1防擋41A彈起之熱媒體28向第1防擋41A推回。因此,可進一步抑制熱媒體28向微粒保持層29之表面附著。Further, in the present embodiment, as described above, the gas is supplied from the gas supply nozzle 60 to the space between the opposing surface 50a of the opposing member 50 and the upper surface of the substrate W. The gas supplied to the space between the opposing surface 50a of the opposing member 50 and the upper surface of the substrate W forms a gas flow moving from the central portion of the upper surface of the substrate W toward the periphery of the upper surface of the substrate W. The heat medium 28 that has bounced from the first guard 41A can be pushed back to the first guard 41A by forming an air flow moving from the central region of the upper surface of the substrate W toward the peripheral surface of the upper surface of the substrate W. Therefore, adhesion of the heat medium 28 to the surface of the particle holding layer 29 can be further suppressed.
供給至對向構件50之對向面50a與基板W之上表面之間之空間之氣體不限於氮氣。供給至對向構件50之對向面50a與基板W之上表面之間之空間之氣體較佳為惰性氣體,且可為氮氣以外之惰性氣體。惰性氣體為相對於基板W之上表面及圖案為惰性之氣體,可為例如氬等稀有氣體類。The gas supplied to the space between the opposing surface 50a of the opposing member 50 and the upper surface of the substrate W is not limited to nitrogen gas. The gas supplied to the space between the opposing surface 50a of the opposing member 50 and the upper surface of the substrate W is preferably an inert gas, and may be an inert gas other than nitrogen. The inert gas is a gas inert to the upper surface and pattern of the substrate W, and may be a rare gas such as argon.
於加熱一定時間後,控制器3將閥26關閉,使來自熱媒體供給噴嘴24之熱媒體之供給停止。然後,執行自基板W之上表面剝離並去除微粒保持層29之去除步驟(步驟S3)。After heating for a certain period of time, the controller 3 closes the valve 26 to stop the supply of the heat medium from the heat medium supply nozzle 24. Then, a removal step of peeling off the surface from the upper surface of the substrate W and removing the particle holding layer 29 is performed (step S3).
即,控制器3控制旋轉馬達11,使旋轉底座9以基板旋轉速度即特定之去除速度旋轉。去除速度為例如500 rpm~800 rpm。That is, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific removal speed. The removal speed is, for example, 500 rpm to 800 rpm.
控制器3控制對向構件升降機構52,將對向構件50配置於上位置。然後,控制器3將閥62關閉。藉此,使來自氣體供給噴嘴60之氣體之供給停止。然後,控制器3控制第2噴嘴移動機構15,將剝離液供給噴嘴6配置於基板W上方之中央位置。且,控制器3一面維持將閥20關閉之狀態,一面將閥17、18打開。藉此,如圖5D所示,朝向旋轉狀態之基板W之上表面,自剝離液供給噴嘴6供給作為第1剝離液之DIW31(DIW供給步驟、步驟S3a)。供給至基板W之上表面之DIW31因離心力之作用遍佈於基板W之上表面之大致整面,且自基板W之上表面之周緣排出。The controller 3 controls the opposing member lifting and lowering mechanism 52 to arrange the opposing member 50 at the upper position. Controller 3 then closes valve 62. Thereby, the supply of the gas from the gas supply nozzle 60 is stopped. Then, the controller 3 controls the second nozzle moving mechanism 15 to arrange the peeling liquid supply nozzle 6 at a central position above the substrate W. Further, the controller 3 opens the valves 17 and 18 while maintaining the state in which the valve 20 is closed. As a result, as shown in FIG. 5D, the DIW 31 as the first peeling liquid is supplied from the peeling liquid supply nozzle 6 toward the upper surface of the substrate W in the rotated state (DIW supply step, step S3a). The DIW 31 supplied to the upper surface of the substrate W is spread over the substantially entire surface of the upper surface of the substrate W by the centrifugal force, and is discharged from the periphery of the upper surface of the substrate W.
接著,控制器3一面將基板旋轉速度維持在去除速度而使旋轉底座9旋轉,一面將閥17關閉,停止DIW之供給後,將閥20打開。藉此,如圖5E所示,朝向旋轉狀態之基板W之上表面,自剝離液供給噴嘴6供給作為第2剝離液之一例之SC1液32(SC1液供給步驟、步驟S3b)。被供給至基板W上表面之SC1液32因離心力之作用遍佈於基板W之上表面之大致整面而取代DIW31,且將SC1液32自基板W之上表面之周緣排出。Next, the controller 3 closes the valve 17 while rotating the rotary base 9 while maintaining the substrate rotation speed at the removal speed, and stops the supply of the DIW, and then opens the valve 20. As a result, as shown in FIG. 5E, the SC1 liquid 32 as an example of the second peeling liquid is supplied from the peeling liquid supply nozzle 6 to the upper surface of the substrate W in the rotated state (SC1 liquid supply step, step S3b). The SC1 liquid 32 supplied to the upper surface of the substrate W is distributed over the substantially entire surface of the upper surface of the substrate W by the centrifugal force instead of the DIW 31, and the SC1 liquid 32 is discharged from the periphery of the upper surface of the substrate W.
DIW31及SC1液32(以下有時將兩者通稱為「剝離液」)皆具有與作為溶劑之PGEE之相溶性。且,將感熱水溶性樹脂加熱至該未達變質溫度而形成之微粒保持層29如上所述,難溶或不溶於水系之剝離液即DIW31或SC1液32。因此,該等剝離液藉由與殘留於微粒保持層29中之PGEE之相互作用,無需使形成該微粒保持層29之溶質成分溶解,即浸透於微粒保持層29中。且,剝離液到達與基板W之界面。藉此,如圖6B所示,保持有微粒30之微粒保持層29自基板W之上表面浮起而被剝離。Both DIW31 and SC1 liquid 32 (hereinafter sometimes referred to as "peeling liquid") have compatibility with PGEE as a solvent. Further, the heat-sensitive water-soluble resin is heated to the non-deterioration temperature to form the fine particle-retaining layer 29 as described above, and is insoluble or insoluble in the water-based stripping liquid, that is, DIW31 or SC1 liquid 32. Therefore, the stripping liquid does not need to dissolve the solute component forming the fine particle holding layer 29, that is, it penetrates into the fine particle holding layer 29 by the interaction with the PGEE remaining in the fine particle holding layer 29. Further, the stripping liquid reaches the interface with the substrate W. Thereby, as shown in FIG. 6B, the fine particle holding layer 29 holding the fine particles 30 floats from the upper surface of the substrate W and is peeled off.
自基板W之上表面剝離之微粒保持層29因基板W之旋轉之離心力之作用,與剝離液一起自基板W之上表面之周緣排出。即,自基板W之上表面去除剝離出之微粒保持層29。The fine particle holding layer 29 peeled off from the upper surface of the substrate W is discharged from the peripheral edge of the upper surface of the substrate W together with the peeling liquid by the centrifugal force of the rotation of the substrate W. That is, the peeled-out particle holding layer 29 is removed from the upper surface of the substrate W.
DIW31作為剝離液之效果低於SC1液32。然而,藉由將DIW31先於SC1液32供給而浸透於微粒保持層29中,而取代殘留於該微粒保持層29中之PGEE之至少一部分。且,DIW31發揮輔助下一個步驟中供給之SC1液32向微粒保持層29浸透的作用。The effect of DIW31 as a stripping solution is lower than that of SC1 liquid 32. However, at least a part of the PGEE remaining in the fine particle holding layer 29 is replaced by the DIW 31 being supplied to the fine particle holding layer 29 before being supplied to the SC1 liquid 32. Further, the DIW 31 serves to assist the SC1 liquid 32 supplied in the next step to permeate into the fine particle holding layer 29.
因此,作為剝離液,較佳於供給SC1液32之前先供給DIW31,但亦可省略DIW31之供給步驟(步驟S3a)。即,作為剝離液,可僅使用SC1液。Therefore, as the stripping liquid, it is preferable to supply the DIW 31 before supplying the SC1 liquid 32, but the supply step of the DIW 31 may be omitted (step S3a). That is, as the stripping liquid, only the SC1 liquid can be used.
第1剝離液不限於DIW31,亦可為碳酸水、電解離子水、氫水、臭氧水、及稀釋濃度(例如10 ppm~100 ppm左右)之鹽酸水之任一者。第2剝離液不限於SC1液32,亦可使用氨水溶液、四甲基氫氧化銨等4級氫氧化銨之水溶液、膽鹼水溶液等鹼性水溶液。The first peeling liquid is not limited to DIW31, and may be any of carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm). The second stripping liquid is not limited to the SC1 liquid 32, and an aqueous alkaline solution such as an aqueous ammonia solution or a four-stage ammonium hydroxide such as tetramethylammonium hydroxide or a choline aqueous solution may be used.
接著,控制器3將閥18及閥20關閉,停止SC1液之供給後,使剝離液供給噴嘴6向退避位置移動。又,控制器3控制旋轉馬達11,使旋轉底座9以基板旋轉速度即特定之清洗速度旋轉。清洗速度為例如100 rpm~1000 rpm。Next, the controller 3 closes the valve 18 and the valve 20, stops the supply of the SC1 liquid, and then moves the peeling liquid supply nozzle 6 to the retracted position. Further, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific cleaning speed. The washing speed is, for example, 100 rpm to 1000 rpm.
接著,控制器3控制對向構件升降機構52,使對向構件50自上位置移動至上位置與下位置之間之供給位置。然後,控制器3將閥67打開。藉此,如圖5F所示,朝向旋轉狀態之基板W之上表面,自清洗液供給噴嘴65供給DIW31作為清洗液(清洗步驟、步驟S4)。Next, the controller 3 controls the opposing member lifting mechanism 52 to move the opposing member 50 from the upper position to the supply position between the upper position and the lower position. Then, the controller 3 opens the valve 67. As a result, as shown in FIG. 5F, the DIW 31 is supplied from the cleaning liquid supply nozzle 65 as a cleaning liquid toward the upper surface of the substrate W in the rotated state (cleaning step, step S4).
來自清洗液供給噴嘴65之清洗液之供給例如於移動至供給位置後開始。來自清洗液供給噴嘴65之清洗液之供給可於對向構件50位於上位置之時點開始,亦可於對向構件50自上位置移動至供給位置之中途開始。The supply of the cleaning liquid from the cleaning liquid supply nozzle 65 is started, for example, after moving to the supply position. The supply of the cleaning liquid from the cleaning liquid supply nozzle 65 may be started at the time when the opposing member 50 is at the upper position, or may be started when the opposing member 50 is moved from the upper position to the supply position.
清洗液不限於DIW31,亦可為碳酸水、電解離子水、氫水、臭氧水、及稀釋濃度(例如10 ppm~100 ppm左右)之鹽酸水之任一者。The cleaning liquid is not limited to DIW31, and may be any of carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm).
被供給之DIW31因離心力之作用遍佈於基板W之上表面之大致整面,其後,自基板W之上表面之周緣排出。藉此,自基板W之上表面沖洗殘留於基板W之上表面之SC1液32。又,例如,即使於之前之步驟中自基板W之上表面剝離之微粒保持層29之一部分未被去除而殘留,亦可由DIW31自基板W之上表面沖洗。The supplied DIW 31 spreads over substantially the entire surface of the upper surface of the substrate W by the centrifugal force, and thereafter is discharged from the periphery of the upper surface of the substrate W. Thereby, the SC1 liquid 32 remaining on the upper surface of the substrate W is washed from the upper surface of the substrate W. Further, for example, even if a portion of the particle holding layer 29 peeled off from the upper surface of the substrate W in the previous step is not removed and remains, it can be washed from the upper surface of the substrate W by the DIW 31.
然而,例如亦可調整之前之DIW31之供給步驟(步驟S3a)、及SC1液32之供給步驟(步驟S3b)之條件,而於該等兩步驟中,自基板W之上表面充分地去除微粒保持層29。於該情形時,亦可省略DIW31之供給步驟(步驟S4)。However, for example, the conditions of the supply step (step S3a) of the previous DIW 31 and the supply step (step S3b) of the SC1 liquid 32 may be adjusted, and in these two steps, the particle retention is sufficiently removed from the upper surface of the substrate W. Layer 29. In this case, the supply step of the DIW 31 (step S4) may also be omitted.
接著,控制器3將閥67關閉,使來自清洗液供給噴嘴65之DIW31之供給停止。Next, the controller 3 closes the valve 67 to stop the supply of the DIW 31 from the cleaning liquid supply nozzle 65.
接著,執行將殘留於去除微粒保持層29後之基板W之上表面之殘渣去除的殘渣去除步驟(步驟S5)。Next, a residue removing step of removing the residue remaining on the upper surface of the substrate W after removing the fine particle holding layer 29 is performed (step S5).
即,控制器3控制旋轉馬達11,使旋轉底座9以基板旋轉速度即特定之殘渣去除速度旋轉。殘渣去除速度為例如數10 rpm~300 rpm。對向構件50之位置維持在供給位置。且,防擋升降機構44使第1防擋41A移動至下位置,將第2防擋41B維持在上位置。That is, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific residue removal speed. The residue removal rate is, for example, several 10 rpm to 300 rpm. The position of the opposing member 50 is maintained at the supply position. Further, the anti-stop mechanism 44 moves the first guard 41A to the lower position and the second guard 41B to the upper position.
接著,控制器3將閥23打開。藉此,如圖5G所示,朝向旋轉狀態之基板W之上表面,自殘渣去除液供給噴嘴7供給殘渣去除液33。Next, the controller 3 opens the valve 23. As a result, as shown in FIG. 5G, the residue removal liquid 33 is supplied from the residue removal liquid supply nozzle 7 toward the upper surface of the substrate W in the rotated state.
供給至基板W之上表面之殘渣去除液33因離心力之作用,遍佈於基板W之上表面之大致整面而取代DIW31。接著,供給至基板W之上表面之殘渣去除液33將殘留於基板W之上表面之微粒保持層29之殘渣溶解後,自基板W之上表面之周緣排出。The residue removing liquid 33 supplied to the upper surface of the substrate W is distributed over the entire surface of the upper surface of the substrate W by the centrifugal force instead of the DIW 31. Then, the residue removal liquid 33 supplied to the upper surface of the substrate W dissolves the residue remaining on the surface of the substrate W on the upper surface of the substrate W, and then is discharged from the periphery of the upper surface of the substrate W.
作為殘渣去除液33,可使用對變質前之感熱水溶液樹脂具有溶解性之溶劑。作為溶劑,可使用例如異丙醇(IPA)。由於IPA具有與水之相溶性,故可順利取代殘渣去除步驟開始時殘留於基板W之上表面之作為清洗液之DIW。再者,由於IPA具有揮發性,故於殘渣去除步驟後快速地自基板之上表面去除。As the residue removing liquid 33, a solvent having solubility in the sensible aqueous solution resin before the deterioration can be used. As the solvent, for example, isopropyl alcohol (IPA) can be used. Since IPA has compatibility with water, it can smoothly replace the DIW as a cleaning liquid remaining on the upper surface of the substrate W at the start of the residue removal step. Furthermore, since IPA is volatile, it is quickly removed from the upper surface of the substrate after the residue removal step.
接著,控制器3將閥23關閉,使來自殘渣去除液供給噴嘴7之殘渣去除液33之供給停止。接著,控制器3控制對向構件升降機構52,使對向構件50自供給位置移動至下位置。接著,控制器3將閥60打開,開始來自氣體供給噴嘴60之氣體之供給。接著,控制器3控制旋轉馬達11,使旋轉底座9以基板旋轉速度即特定之旋轉乾燥速度旋轉(步驟S6)。旋轉乾燥速度為例如500 rpm~1500 rpm。來自氣體供給噴嘴60之氣體之供給開始、與基板旋轉速度之變更例如同時執行。Next, the controller 3 closes the valve 23 to stop the supply of the residue removal liquid 33 from the residue removal liquid supply nozzle 7. Next, the controller 3 controls the opposing member lifting mechanism 52 to move the opposing member 50 from the supply position to the lower position. Next, the controller 3 opens the valve 60 to start the supply of the gas from the gas supply nozzle 60. Next, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific rotational drying speed (step S6). The spin drying speed is, for example, 500 rpm to 1500 rpm. The supply of gas from the gas supply nozzle 60 is started, and the change in the rotational speed of the substrate is performed, for example.
藉由基板W之旋轉對殘渣去除液33作用離心力,如圖5H所示,殘渣去除液33自基板W之上表面之周緣排出,並且自基板W之上表面揮發而去除。藉由執行旋轉乾燥,結束一連串之洗淨步驟。隨後,控制器3將閥62關閉,使來自氣體供給噴嘴60之氣體之供給停止。The centrifugal force is applied to the residue removing liquid 33 by the rotation of the substrate W. As shown in Fig. 5H, the residue removing liquid 33 is discharged from the periphery of the upper surface of the substrate W, and is volatilized from the upper surface of the substrate W to be removed. A series of washing steps are terminated by performing spin drying. Subsequently, the controller 3 closes the valve 62 to stop the supply of gas from the gas supply nozzle 60.
另外,作為處理液所含之溶質,除感熱水溶性樹脂以外,亦可使用例如:丙烯樹脂、苯酚樹脂、環氧樹脂、三聚氰胺樹脂、尿素樹脂、不飽和聚酯樹脂、醇酸樹脂、聚胺酯、聚醯亞胺、聚乙烯、聚丙烯、聚氯乙烯、聚苯乙烯、聚乙酸乙烯酯、聚四氟乙烯、丙烯腈-丁二烯-苯乙烯树脂、丙烯腈-苯乙烯、聚醯胺、聚縮醛、聚碳酸酯、聚乙烯醇、改質聚苯醚、聚對苯二甲酸丁二酯、聚對苯二甲酸乙二酯、聚苯硫醚、聚碸、聚醚醚酮、聚醯胺-醯亞胺等。Further, as the solute contained in the treatment liquid, in addition to the thermosensitive water-soluble resin, for example, an acrylic resin, a phenol resin, an epoxy resin, a melamine resin, a urea resin, an unsaturated polyester resin, an alkyd resin, a polyurethane, or the like may be used. Polyimine, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polyvinyl acetate, polytetrafluoroethylene, acrylonitrile-butadiene-styrene resin, acrylonitrile-styrene, polyamine, Polyacetal, polycarbonate, polyvinyl alcohol, modified polyphenylene ether, polybutylene terephthalate, polyethylene terephthalate, polyphenylene sulfide, polyfluorene, polyetheretherketone, poly Amidoxime-quinone imine and the like.
作為溶劑,可使用能將任一種樹脂溶解而構成處理液之任意溶劑。尤佳使用與剝離液具相溶性之溶劑。As the solvent, any solvent which can dissolve any of the resins to form a treatment liquid can be used. It is especially preferable to use a solvent compatible with the stripping solution.
於任一種樹脂之情形,作為剝離液,皆可使用DIW等水、或鹼性水溶液等水系剝離液。In the case of any of the resins, as the peeling liquid, water such as DIW or a water-based peeling liquid such as an alkaline aqueous solution can be used.
作為殘渣去除液,可使用對任一種樹脂具有溶解性之任意溶劑。作為殘渣去除液,可使用例如稀釋劑、甲苯、乙酸酯類、醇類、二醇類等有機溶劑、乙酸、甲酸、羥基乙酸等酸性液。尤佳使用與水系剝離液具相溶性之溶劑。As the residue removing liquid, any solvent having solubility in any of the resins can be used. As the residue removing liquid, for example, an organic solvent such as a diluent, toluene, an acetate, an alcohol or a glycol, or an acidic liquid such as acetic acid, formic acid or glycolic acid can be used. It is especially preferred to use a solvent compatible with the aqueous stripping solution.
圖7係於使SiO2 之微粒附著於Si基板上並實施基板洗淨時,測定殘留於基板之上表面之微粒保持層之殘渣個數之結果的圖表。自左起依序表示圖4所示之基板洗淨之各步驟中省略殘渣去除步驟之情形、以及實施10秒、20秒、及30秒之殘渣去除步驟之情形之個數。FIG. 7 is a graph showing the results of measuring the number of residues of the fine particle-retaining layer remaining on the upper surface of the substrate when the fine particles of SiO 2 are attached to the Si substrate and the substrate is cleaned. The number of cases in which the residue removal step is omitted in each step of the substrate cleaning shown in FIG. 4 and the case where the residue removal steps of 10 seconds, 20 seconds, and 30 seconds are performed are sequentially indicated from the left.
自圖7之結果判定,藉由實施殘渣去除步驟,可大幅抑制微粒保持層之殘渣殘留或再附著於基板W之上表面。As a result of the determination of FIG. 7, it is determined that the residue of the fine particle-retaining layer remains or reattaches to the upper surface of the substrate W by performing the residue removal step.
圖8係顯示使SiO2 之微粒附著於Si基板上並實施基板洗淨時之微粒去除率(PRE)之結果的圖表。Fig. 8 is a graph showing the results of the particle removal rate (PRE) when the particles of SiO 2 are attached to the Si substrate and the substrate is washed.
於圖中,左側表示實施圖4所示之基板洗淨之各步驟之情形,即進行殘渣去除後之特定粒徑以上之微粒相關之PRE。又,右側表示基板洗淨步驟中省略殘渣去除步驟的情形之特定粒徑以上之微粒相關之PRE。In the figure, the left side shows the steps of performing the steps of cleaning the substrate shown in Fig. 4, that is, the PRE-related PR of the specific particle diameter or more after the residue removal. Further, the right side indicates the PRE-related PRE of the specific particle diameter or more in the case where the residue removal step is omitted in the substrate cleaning step.
於任一情形下皆獲得較高之PRE。自該結果判定,實施殘渣去除步驟時再釋放出之微粒極其微量,且難以再附著於基板之上表面,因此,即使實施殘渣去除步驟,亦無導致PRE降低之虞。 <第2實施形態>A higher PRE is obtained in either case. From this result, it was judged that the fine particles released in the residue removal step were extremely small and hardly adhered to the upper surface of the substrate. Therefore, even if the residue removal step was carried out, there was no possibility of a decrease in the PRE. <Second embodiment>
圖9係顯示本發明第2實施形態之處理單元2P之概略構成之模式剖視圖。於圖9中,對與截至目前為止說明之構件相同之構件標註相同之參照符號,而省略其說明(後述之圖10~圖12B中亦同)。Fig. 9 is a schematic cross-sectional view showing a schematic configuration of a processing unit 2P according to a second embodiment of the present invention. In FIG. 9, the same members as those described so far are denoted by the same reference numerals, and the description thereof is omitted (the same applies to FIGS. 10 to 12B which will be described later).
參照圖9,處理單元2P與第1實施形態之處理單元2(參照圖2)之主要不同點在於:第2實施形態之處理單元2P取代對向構件50、殘渣去除液供給噴嘴7、氣體供給噴嘴60及清洗液供給噴嘴65,而包含移動噴嘴70、及包含加熱器單元100。Referring to Fig. 9, the processing unit 2P is mainly different from the processing unit 2 (see Fig. 2) of the first embodiment in that the processing unit 2P of the second embodiment replaces the opposing member 50, the residue removing liquid supply nozzle 7, and the gas supply. The nozzle 60 and the cleaning liquid supply nozzle 65 include a moving nozzle 70 and a heater unit 100.
移動噴嘴70為至少可沿水平方向移動之噴嘴。移動噴嘴70具有作為將殘渣去除液供給至基板W之上表面之殘渣去除液供給單元之功能、及作為將氮氣等氣體供給至基板W之上表面之氣體供給單元的功能。The moving nozzle 70 is a nozzle that is movable at least in the horizontal direction. The moving nozzle 70 has a function as a residue removing liquid supply unit that supplies the residue removing liquid to the upper surface of the substrate W, and a function as a gas supply unit that supplies a gas such as nitrogen gas to the upper surface of the substrate W.
移動噴嘴70藉由第3噴嘴移動機構80沿例如水平方向(垂直於旋轉軸線A1之方向)移動。藉由沿水平方向之移動,可使移動噴嘴70於中央位置與退避位置之間移動。移動噴嘴70位於中央位置時,對向於基板W之上表面之旋轉中心位置。移動噴嘴70位於退避位置時,不與基板W之上表面對向。不與基板W之上表面對向之退避位置為俯視時旋轉底座9之外側位置。The moving nozzle 70 is moved by, for example, the horizontal direction (the direction perpendicular to the rotation axis A1) by the third nozzle moving mechanism 80. By moving in the horizontal direction, the moving nozzle 70 can be moved between the center position and the retracted position. When the moving nozzle 70 is at the center position, it is opposite to the center of rotation of the upper surface of the substrate W. When the moving nozzle 70 is at the retracted position, it does not face the upper surface of the substrate W. The retracted position that does not face the upper surface of the substrate W is the position on the outer side of the rotating base 9 in a plan view.
於移動噴嘴70連接有殘渣去除液供給管71、第1氣體供給管72A、第2氣體供給管72B及第3氣體供給管72C。於殘渣去除液供給管71介裝有開閉其流道之閥73。於氣體供給管72A、72B、72C分別介裝有開閉其流道之閥74A、74B、74C。A residue removal liquid supply pipe 71, a first gas supply pipe 72A, a second gas supply pipe 72B, and a third gas supply pipe 72C are connected to the moving nozzle 70. The residue removal liquid supply pipe 71 is provided with a valve 73 that opens and closes its flow path. Valves 74A, 74B, and 74C that open and close their flow passages are respectively disposed in the gas supply pipes 72A, 72B, and 72C.
移動噴嘴70具有將自殘渣去除液供給管71供給之殘渣去除液沿鉛直方向噴出之中心噴出口90。移動噴嘴70具有將自第1氣體供給管72A供給之氣體沿鉛直方向直線狀噴出之線狀流噴出口91。再者,移動噴嘴70具有將自第2氣體供給管72B供給之氣體沿水平方向放射狀地朝移動噴嘴70之周圍噴出之水平流噴出口92。又,移動噴嘴70具有將自第3氣體供給管72C供給之氣體沿斜下方放射狀地朝移動噴嘴70之周圍噴出之傾斜流噴出口93。The moving nozzle 70 has a center discharge port 90 that discharges the residue removing liquid supplied from the residue removing liquid supply pipe 71 in the vertical direction. The moving nozzle 70 has a linear flow ejection port 91 that linearly ejects the gas supplied from the first gas supply pipe 72A in the vertical direction. In addition, the moving nozzle 70 has a horizontal flow discharge port 92 that radially discharges the gas supplied from the second gas supply pipe 72B toward the periphery of the moving nozzle 70 in the horizontal direction. Further, the moving nozzle 70 has an inclined flow ejection port 93 that discharges the gas supplied from the third gas supply pipe 72C radially downward toward the periphery of the moving nozzle 70.
於第1氣體供給管72A介裝有用以正確地調節流過第1氣體供給管72A內之氣體之流量的質流控制器75。質流控制器75具有流量控制閥。又,於第2氣體供給管72B介裝有用以調節第2氣體供給管72B內流通之氣體之流量的流量可變閥76B。又,於第3氣體供給管72C介裝有用以調節第3氣體供給管72C內流通之氣體之流量的流量可變閥76C。再者,於氣體供給管72A、72B、72C分別介裝有用以去除異物之過濾器77A、77B、77C。A mass flow controller 75 for accurately adjusting the flow rate of the gas flowing through the first gas supply pipe 72A is interposed in the first gas supply pipe 72A. The mass flow controller 75 has a flow control valve. Further, a flow rate variable valve 76B for regulating the flow rate of the gas flowing through the second gas supply pipe 72B is interposed in the second gas supply pipe 72B. Further, a flow rate variable valve 76C for regulating the flow rate of the gas flowing through the third gas supply pipe 72C is interposed in the third gas supply pipe 72C. Further, filters 77A, 77B, and 77C for removing foreign matter are interposed in the gas supply pipes 72A, 72B, and 72C, respectively.
該實施形態之複數根夾盤銷8可於接觸於基板W之周端而固持基板W之閉狀態、與自基板W之周端退避之開狀態之間開閉。又,於開狀態中,複數根夾盤銷8自基板W之周端離開而解除固持,另一方面,接觸於基板W周緣部之下表面而自下方支持基板W。處理單元2P進而包含對複數根夾盤銷8進行驅動開閉之夾盤銷驅動機構108。夾盤銷驅動機構108包含例如:連桿機構109,其內置於旋轉底座9;及驅動源110,其配置於旋轉底座9外。驅動源110包含例如螺桿機構、及賦予其驅動力之電動馬達。The plurality of chuck pins 8 of the embodiment can be opened and closed between a closed state in which the substrate W is held in contact with the peripheral end of the substrate W and an open state in which the peripheral end of the substrate W is retracted. Further, in the open state, the plurality of chuck pins 8 are separated from the peripheral end of the substrate W and released, and the substrate W is supported from below by contacting the lower surface of the peripheral portion of the substrate W. The processing unit 2P further includes a chuck pin driving mechanism 108 that drives and opens and closes the plurality of chuck pins 8. The chuck pin drive mechanism 108 includes, for example, a link mechanism 109 that is built in the rotary base 9 and a drive source 110 that is disposed outside the rotary base 9. The drive source 110 includes, for example, a screw mechanism and an electric motor that imparts a driving force thereto.
加熱器單元100具有圓板狀之加熱板之形態。加熱器單元100具有自下方對向於基板W之下表面之對向面100a。The heater unit 100 has a form of a disk-shaped heating plate. The heater unit 100 has an opposite surface 100a opposed to the lower surface of the substrate W from below.
加熱器單元100包含:板本體101、複數根支持銷102、及加熱器103。板本體101於俯視時略小於基板W。複數根支持銷102自板本體101之上表面突出。由板本體101之上表面、及複數根支持銷102之表面構成對向面100a。加熱器103亦可為內置於板本體101之電阻器。藉由對加熱器103通電而加熱對向面100a。且,於加熱器103經由供電線104自加熱器通電機構105供給電力。The heater unit 100 includes a plate body 101, a plurality of support pins 102, and a heater 103. The board body 101 is slightly smaller than the substrate W in plan view. A plurality of support pins 102 protrude from the upper surface of the board body 101. The opposing surface 100a is formed by the upper surface of the plate body 101 and the surface of the plurality of support pins 102. The heater 103 may also be a resistor built in the board body 101. The opposing surface 100a is heated by energizing the heater 103. Further, the heater 103 supplies electric power from the heater energizing mechanism 105 via the power supply line 104.
加熱器單元100配置於旋轉底座9之上方。處理單元2P包含使加熱器單元100相對於旋轉底座9相對升降之加熱器升降機構106。加熱器升降機構106包含例如螺桿機構、及賦予其驅動力之電動馬達。The heater unit 100 is disposed above the rotating base 9. The processing unit 2P includes a heater elevating mechanism 106 that elevates and lowers the heater unit 100 relative to the rotating base 9. The heater elevating mechanism 106 includes, for example, a screw mechanism and an electric motor that imparts a driving force thereto.
於加熱器單元100之下表面,結合有沿旋轉軸線A1朝鉛直方向延伸之升降軸107。升降軸107插通形成於旋轉底座9之中央部之貫通孔9a、與中空之旋轉軸10。於升降軸107內穿通有供電線104。On the lower surface of the heater unit 100, an elevating shaft 107 extending in the vertical direction along the rotation axis A1 is coupled. The lifting shaft 107 is inserted through a through hole 9a formed in a central portion of the rotating base 9, and a hollow rotating shaft 10. A power supply line 104 is passed through the lifting shaft 107.
加熱器升降機構106經由升降軸107使加熱器單元100升降,藉此可將加熱器單元100配置於下位置及上位置間之任意之中間位置。於加熱器單元100位於下位置時,對向面100a與基板W下表面間之距離為例如15 mm。於加熱器單元100自下位置向上位置移動時,於加熱器單元100到達上位置之前對向面100a接觸於基板W之下表面。The heater elevating mechanism 106 raises and lowers the heater unit 100 via the elevating shaft 107, whereby the heater unit 100 can be disposed at any intermediate position between the lower position and the upper position. When the heater unit 100 is in the lower position, the distance between the opposing surface 100a and the lower surface of the substrate W is, for example, 15 mm. When the heater unit 100 is moved from the lower position to the upper position, the opposite surface 100a is in contact with the lower surface of the substrate W before the heater unit 100 reaches the upper position.
將加熱器單元100之對向面100a抵接於基板W之下表面時之加熱器單元100之位置稱為抵接位置。於複數根夾盤銷8為開狀態時,加熱器單元100可移動至較抵接位置更上方。於加熱器單元100位於較抵接位置更上方時,基板W被加熱器單元100往上頂。於加熱器單元100位於較抵接位置更上方或抵接位置時,以接觸狀態加熱基板W。The position of the heater unit 100 when the opposing surface 100a of the heater unit 100 abuts against the lower surface of the substrate W is referred to as an abutting position. When the plurality of chuck pins 8 are in the open state, the heater unit 100 can be moved to be above the abutting position. When the heater unit 100 is located above the abutting position, the substrate W is topped up by the heater unit 100. When the heater unit 100 is located above the abutting position or at the abutting position, the substrate W is heated in a contact state.
於加熱器單元100位於較抵接位置更下方時,藉由來自對向面100a之輻射熱加熱基板W。加熱器單元100越接近基板W,對基板W之加熱越強。處理單元2P之熱媒體供給噴嘴24插通中空之升降軸107,進而貫通加熱器單元100。When the heater unit 100 is located below the abutting position, the substrate W is heated by the radiant heat from the opposing surface 100a. The closer the heater unit 100 is to the substrate W, the stronger the heating of the substrate W is. The heat medium supply nozzle 24 of the processing unit 2P is inserted into the hollow lifting shaft 107 and further penetrates the heater unit 100.
圖10係顯示顯示第2實施形態之處理單元2P之電性構成之方塊圖。第2實施形態之處理單元2P之控制器3與第1實施形態同樣構成為包含:處理器(CPU)3A、及儲存控制程式之記憶體3B,且藉由處理器3A執行控制程式而執行用以控制基板處理之各種控制。控制器3經編程為控制旋轉馬達11、夾盤銷驅動機構108、噴嘴移動機構12、15、80、加熱器通電機構105、加熱器升降機構106、防擋升降機構44、及閥類14、17、18、20、26、73、74A、74B、74C、75、76B、76C。Fig. 10 is a block diagram showing the electrical configuration of the processing unit 2P of the second embodiment. Similarly to the first embodiment, the controller 3 of the processing unit 2P of the second embodiment includes a processor (CPU) 3A and a memory 3B storing a control program, and is executed by the processor 3A executing a control program. To control various controls of substrate processing. The controller 3 is programmed to control the rotary motor 11, the chuck pin drive mechanism 108, the nozzle moving mechanism 12, 15, 80, the heater energizing mechanism 105, the heater lifting mechanism 106, the anti-lifting mechanism 44, and the valve class 14, 17, 18, 20, 26, 73, 74A, 74B, 74C, 75, 76B, 76C.
第2實施形態之處理單元2P可實施與第1實施形態之處理單元2同樣之基板洗淨(參照圖4)。然而,由於第2實施形態之處理單元2P之基板洗淨中之各構件之行為與第1實施形態之處理單元2中之各構件之行為不同,故使用圖11A~圖11H,對第2實施形態之處理單元2P之基板洗淨之詳情進行說明。圖11A~圖11H為用以說明處理單元2P之基板洗淨之一例之情形的圖解剖視圖。於基板處理開始時,控制器3控制加熱器升降機構106,將加熱器單元100配置於下位置。The processing unit 2P of the second embodiment can perform the same substrate cleaning as the processing unit 2 of the first embodiment (see FIG. 4). However, since the behavior of each member in the substrate cleaning of the processing unit 2P of the second embodiment is different from the behavior of each member in the processing unit 2 of the first embodiment, the second embodiment is used with reference to FIGS. 11A to 11H. Details of the substrate cleaning of the processing unit 2P of the form will be described. 11A to 11H are diagrams for explaining an example of a case where the substrate of the processing unit 2P is washed. At the start of the substrate processing, the controller 3 controls the heater elevating mechanism 106 to arrange the heater unit 100 at the lower position.
由處理單元2進行之基板洗淨中,首先,執行處理液供給步驟(步驟S1)。於處理液供給步驟中,首先,控制器3驅動旋轉馬達11,使旋轉底座9旋轉而開始基板W之旋轉。於處理液供給步驟中,旋轉底座9以基板旋轉速度即特定之處理液供給速度旋轉。處理液供給速度為例如10 rpm~數10 rpm。In the substrate cleaning by the processing unit 2, first, the processing liquid supply step is performed (step S1). In the processing liquid supply step, first, the controller 3 drives the rotary motor 11 to rotate the rotary base 9 to start the rotation of the substrate W. In the processing liquid supply step, the rotary base 9 is rotated at a substrate rotation speed, that is, a specific processing liquid supply speed. The processing liquid supply rate is, for example, 10 rpm to several 10 rpm.
接著,控制器3控制第1噴嘴移動機構12,將處理液供給噴嘴5配置於基板W上方之中央位置。接著,控制器3將閥14打開。藉此,如圖11A所示,朝向旋轉狀態之基板W之上表面,自處理液供給噴嘴5供給處理液27。供給至基板W之上表面之處理液27因離心力之作用而遍佈於基板W之上表面之大致整面。Next, the controller 3 controls the first nozzle moving mechanism 12 to arrange the processing liquid supply nozzle 5 at a central position above the substrate W. Next, the controller 3 opens the valve 14. Thereby, as shown in FIG. 11A, the processing liquid 27 is supplied from the processing liquid supply nozzle 5 toward the upper surface of the substrate W in the rotating state. The treatment liquid 27 supplied to the upper surface of the substrate W is spread over substantially the entire surface of the upper surface of the substrate W by the action of centrifugal force.
於供給一定時間之處理液後,執行使處理液固化或硬化而於基板W之上表面形成微粒保持層之成膜步驟(步驟S2)。於成膜步驟中,首先,控制器3將閥14關閉,使來自處理液供給噴嘴5之處理液27之供給停止。接著,控制器3使處理液供給噴嘴5向退避位置移動。After the treatment liquid is supplied for a predetermined period of time, a film forming step of solidifying or hardening the treatment liquid to form a fine particle-retaining layer on the upper surface of the substrate W is performed (step S2). In the film forming step, first, the controller 3 closes the valve 14 to stop the supply of the processing liquid 27 from the processing liquid supply nozzle 5. Next, the controller 3 moves the processing liquid supply nozzle 5 to the retracted position.
當來自處理液供給噴嘴5之處理液27之供給停止時,控制器3控制旋轉馬達11,使旋轉底座9以基板旋轉速度即特定之甩除速度旋轉(甩除步驟、步驟S2a)。甩除速度為例如300 rpm~1500 rpm。藉此,如圖11B所示,首先,將供給至基板W上表面之處理液27自基板W上表面之周緣排出,接著,揮發性溶劑之揮發進展。When the supply of the processing liquid 27 from the processing liquid supply nozzle 5 is stopped, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific erasing speed (the elimination step, step S2a). The removal speed is, for example, 300 rpm to 1500 rpm. Thereby, as shown in FIG. 11B, first, the treatment liquid 27 supplied to the upper surface of the substrate W is discharged from the periphery of the upper surface of the substrate W, and then the volatilization of the volatile solvent progresses.
接著,控制器3控制旋轉馬達11,使旋轉底座9以基板旋轉速度即特定之加熱時速度旋轉。加熱時速度為例如100 rpm~1500 rpm。且,如圖11C所示,控制器3控制加熱器升降機構106,使加熱器單元100自下位置上升,將加熱器單元100配置於較下位置更接近基板W之接近位置。藉此,加熱器單元100對基板W之加熱增強(加熱步驟、步驟S2b)。於加熱器單元100位於接近位置時,對向面100a與基板W之下表面於下方分開特定距離(例如4 mm)。Next, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific heating speed. The heating speed is, for example, 100 rpm to 1500 rpm. Further, as shown in FIG. 11C, the controller 3 controls the heater elevating mechanism 106 to raise the heater unit 100 from the lower position, and arranges the heater unit 100 at a lower position closer to the substrate W. Thereby, the heating of the substrate W by the heater unit 100 is enhanced (heating step, step S2b). When the heater unit 100 is in the approximate position, the opposite surface 100a is separated from the lower surface of the substrate W by a specific distance (for example, 4 mm).
基板W之旋轉速度變更為加熱時速度、及加熱器單元100向接近位置移動,例如可同時開始。The rotation speed of the substrate W is changed to the speed at the time of heating and the heater unit 100 is moved to the approach position, and for example, it can be simultaneously started.
接著,發揮性溶劑之揮發進而進展,且處理液27固化或硬化。藉此,形成包含溶質成分之固體狀之膜,即微粒保持層29。Then, the volatilization of the functional solvent progresses, and the treatment liquid 27 is cured or hardened. Thereby, a solid film containing a solute component, that is, a particle holding layer 29, is formed.
於加熱一定時間後,執行自基板W之上表面剝離並去除微粒保持層29之去除步驟(步驟S3)。After heating for a certain period of time, a removal step of peeling off the surface from the upper surface of the substrate W and removing the particle holding layer 29 is performed (step S3).
詳細而言,控制器3控制加熱器升降機構106,使加熱器單元100自接近位置移動至下位置。接著,控制器3控制旋轉馬達11,使旋轉底座9以基板旋轉速度即特定之去除速度旋轉。去除速度為例如500 rpm~800 rpm。接著,控制器3控制第2噴嘴移動機構15,使剝離液供給噴嘴6移動至基板W上方之中央位置。In detail, the controller 3 controls the heater elevating mechanism 106 to move the heater unit 100 from the approaching position to the lower position. Next, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific removal speed. The removal speed is, for example, 500 rpm to 800 rpm. Next, the controller 3 controls the second nozzle moving mechanism 15 to move the peeling liquid supply nozzle 6 to a central position above the substrate W.
於剝離液供給噴嘴6到達基板W上方之中央位置後,控制器3一面維持將閥20關閉之狀態,一面將閥17、18打開。藉此,如圖11D所示,朝向旋轉狀態之基板W之上表面,自剝離液供給噴嘴6供給作為第1剝離液之DIW31(DIW供給步驟、步驟S3a)。供給至基板W之上表面之DIW31因離心力之作用而遍佈於基板W之上表面之大致整面,且自基板W之上表面之周緣排出。After the peeling liquid supply nozzle 6 reaches the center position above the substrate W, the controller 3 opens the valves 17 and 18 while maintaining the valve 20 closed. As a result, as shown in FIG. 11D, the DIW 31 as the first peeling liquid is supplied from the peeling liquid supply nozzle 6 toward the upper surface of the substrate W in the rotated state (DIW supply step, step S3a). The DIW 31 supplied to the upper surface of the substrate W is spread over the substantially entire surface of the upper surface of the substrate W by the centrifugal force, and is discharged from the periphery of the upper surface of the substrate W.
基板W之旋轉速度變更為去除速度、剝離液供給噴嘴6向中央位置移動、及加熱器單元100向下位置移動,可同時開始。The rotation speed of the substrate W is changed to the removal speed, the peeling liquid supply nozzle 6 is moved to the center position, and the heater unit 100 is moved downward, and the simultaneous start can be started.
接著,控制器3一面將基板旋轉速度維持在去除速度而使旋轉底座9旋轉,一面將閥17關閉而停止供給DIW後,將閥20打開。藉此,如圖11E所示,朝向旋轉狀態之基板W之上表面,自剝離液供給噴嘴6供給作為第2剝離液之一例之SC1液32(SC1液供給步驟、步驟S3b)。供給至基板W之上表面之SC1液32因離心力之作用,遍佈於基板W之上表面之大致整面而取代DIW31,且自基板W之上表面周緣排出。Next, the controller 3 maintains the rotation speed of the substrate at the removal speed and rotates the rotary base 9, and closes the valve 17 to stop the supply of DIW, and then opens the valve 20. As a result, as shown in FIG. 11E, the SC1 liquid 32 as an example of the second peeling liquid is supplied from the peeling liquid supply nozzle 6 to the upper surface of the substrate W in the rotated state (SC1 liquid supply step, step S3b). The SC1 liquid 32 supplied to the upper surface of the substrate W is distributed over the entire surface of the upper surface of the substrate W by the centrifugal force instead of the DIW 31, and is discharged from the periphery of the upper surface of the substrate W.
自基板W之上表面剝離之微粒保持層29因基板W之旋轉之離心力之作用,與剝離液一併自基板W之上表面周緣排出。即,自基板W之上表面去除經剝離之微粒保持層29。The fine particle holding layer 29 peeled off from the upper surface of the substrate W is discharged from the peripheral edge of the upper surface of the substrate W together with the peeling liquid by the centrifugal force of the rotation of the substrate W. That is, the peeled fine particle holding layer 29 is removed from the upper surface of the substrate W.
接著,控制器3於將閥20關閉而停止SC1液之供給後,控制旋轉馬達11,使旋轉底座9以基板旋轉速度即特定之清洗速度旋轉。清洗速度為例如100 rpm~1000 rpm。接著,控制器3將閥17打開。藉此,如圖11F所示,朝向旋轉狀態之基板W之上表面,自剝離液供給噴嘴6供給作為清洗液之DIW31(清洗步驟、步驟S4)。Next, after the valve 20 is closed and the supply of the SC1 liquid is stopped, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific cleaning speed. The washing speed is, for example, 100 rpm to 1000 rpm. Next, the controller 3 opens the valve 17. As a result, as shown in FIG. 11F, the DIW 31 as the cleaning liquid is supplied from the peeling liquid supply nozzle 6 toward the upper surface of the substrate W in the rotated state (cleaning step, step S4).
被供給之DIW31因離心力之作用而遍佈於基板W上表面之大致整面,且自基板W上表面之周緣排出。藉此,自基板W之上表面沖洗殘留於基板W之上表面之SC1液32。又,例如,即使於前步驟中自基板W之上表面剝離之微粒保持層29之一部分未被去除而殘留,亦可由DIW31自基板W之上面沖洗。The supplied DIW 31 is spread over the entire surface of the upper surface of the substrate W by the action of centrifugal force, and is discharged from the periphery of the upper surface of the substrate W. Thereby, the SC1 liquid 32 remaining on the upper surface of the substrate W is washed from the upper surface of the substrate W. Further, for example, even if a portion of the fine particle holding layer 29 peeled off from the upper surface of the substrate W in the previous step is not removed and remains, it can be washed from the upper surface of the substrate W by the DIW 31.
然而,例如,亦可調整之前之DIW31之供給步驟(步驟S3a)、及SC1液32之供給步驟(步驟S3b)之條件,而於該兩個步驟中,自基板W之上表面充分地去除微粒保持層29。於該情形時,可省略DIW31之供給步驟(步驟S4)。However, for example, the conditions of the supply step (step S3a) of the previous DIW 31 and the supply step (step S3b) of the SC1 liquid 32 may be adjusted, and in the two steps, the surface is sufficiently removed from the upper surface of the substrate W. The layer 29 is maintained. In this case, the supply step of the DIW 31 can be omitted (step S4).
接著,執行將去除微粒保持層29後之基板W之上表面殘留之殘渣去除之殘渣去除步驟(步驟S5)。Next, a residue removing step of removing the residue remaining on the upper surface of the substrate W after removing the fine particle holding layer 29 is performed (step S5).
即,控制器3控制旋轉馬達11,使旋轉底座9以基板旋轉速度即特定之殘渣去除速度旋轉。殘渣去除速度為例如數10 rpm~300 rpm。That is, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific residue removal speed. The residue removal rate is, for example, several 10 rpm to 300 rpm.
接著,控制器3控制加熱器升降機構106,使加熱器單元100自下位置移動至接近位置。控制器3將閥17、18關閉而使來自剝離液供給噴嘴6之DIW之供給停止。接著,控制器3控制第2噴嘴移動機構15,使剝離液供給噴嘴6移動至退避位置。Next, the controller 3 controls the heater elevating mechanism 106 to move the heater unit 100 from the lower position to the approach position. The controller 3 closes the valves 17, 18 to stop the supply of the DIW from the stripping liquid supply nozzle 6. Next, the controller 3 controls the second nozzle moving mechanism 15 to move the peeling liquid supply nozzle 6 to the retracted position.
基板W之旋轉速度變更為去除速度、剝離液供給噴嘴6向退避位置移動、及加熱器單元100向接近位置移動,可同時開始。The rotation speed of the substrate W is changed to the removal speed, the peeling liquid supply nozzle 6 is moved to the retracted position, and the heater unit 100 is moved to the approach position, and can be simultaneously started.
接著,控制器3控制第3噴嘴移動機構80,將移動噴嘴70配置於基板W上方之中央位置。當移動噴嘴70到達中央位置後,控制器3將閥73打開。藉此,如圖11G所示,朝向旋轉狀態之基板W之上表面,自移動噴嘴70供給殘渣去除液33。Next, the controller 3 controls the third nozzle moving mechanism 80 to arrange the moving nozzle 70 at a central position above the substrate W. When the moving nozzle 70 reaches the center position, the controller 3 opens the valve 73. Thereby, as shown in FIG. 11G, the residue removing liquid 33 is supplied from the moving nozzle 70 toward the upper surface of the substrate W in the rotated state.
被供給至基板W之上表面之殘渣去除液33因離心力之作用,遍佈於基板W之上表面之大致整面而取代DIW31。接著,供給至基板W之上表面之殘渣去除液33於將殘留於基板W之上表面之微粒保持層29之殘渣溶解後自基板W上表面之周緣排出。The residue removal liquid 33 supplied to the upper surface of the substrate W is distributed over the substantially entire surface of the upper surface of the substrate W by the centrifugal force instead of the DIW 31. Then, the residue removing liquid 33 supplied to the upper surface of the substrate W is discharged from the periphery of the upper surface of the substrate W by dissolving the residue of the fine particle holding layer 29 remaining on the upper surface of the substrate W.
又,控制器3將閥74B打開。藉此,自移動噴嘴70之水平流噴出口92放射狀地噴出氮氣等氣體,以水平氣流95覆蓋基板W之上表面。來自水平流噴出口92之氮氣之噴出流量為例如100 升/分鐘左右。由於基板W之上表面被氮氣之水平氣流覆蓋,故可抑制或防止自處理單元2P內之各構件彈起之液滴及氣體環境中之霧等附著於基板W之上表面。Further, the controller 3 opens the valve 74B. Thereby, a gas such as nitrogen gas is radially ejected from the horizontal flow discharge port 92 of the moving nozzle 70, and the upper surface of the substrate W is covered with the horizontal airflow 95. The discharge flow rate of nitrogen gas from the horizontal flow discharge port 92 is, for example, about 100 liters/min. Since the upper surface of the substrate W is covered by the horizontal flow of nitrogen gas, it is possible to suppress or prevent the droplets from the respective members in the processing unit 2P from rising from the surface of the substrate W and the mist in the gas atmosphere.
接著,控制器3將閥73關閉,使來自移動噴嘴70之殘渣去除液33之供給停止。其後,控制器3控制第3噴嘴移動機構80,使移動噴嘴70接近基板W之上表面。於該狀態下,控制器3將閥74A打開,自線狀流噴出口91朝向基板W之中心垂直地以例如15 升/分鐘噴吹氣體之線狀氣流96。接著,控制器3控制加熱器升降機構106,使加熱器單元100自接近位置移動至下位置。接著,控制器3控制旋轉馬達11,使旋轉底座9以基板旋轉速度即特定之旋轉乾燥速度旋轉(步驟S6)。旋轉乾燥速度為例如800 rpm。Next, the controller 3 closes the valve 73 to stop the supply of the residue removing liquid 33 from the moving nozzle 70. Thereafter, the controller 3 controls the third nozzle moving mechanism 80 so that the moving nozzle 70 approaches the upper surface of the substrate W. In this state, the controller 3 opens the valve 74A, and blows the linear airflow 96 of the gas from the linear flow ejection port 91 toward the center of the substrate W at, for example, 15 liters/min. Next, the controller 3 controls the heater elevating mechanism 106 to move the heater unit 100 from the approaching position to the lower position. Next, the controller 3 controls the rotary motor 11 to rotate the rotary base 9 at a substrate rotation speed, that is, a specific rotational drying speed (step S6). The spin drying speed is, for example, 800 rpm.
藉由基板W之旋轉對殘渣去除液33作用離心力,如圖11H所示,殘渣去除液33自基板W上表面之周緣排出,且自基板W之上表面揮發而去除。藉由執行旋轉乾燥,結束一連串之洗淨步驟。The centrifugal force is applied to the residue removing liquid 33 by the rotation of the substrate W. As shown in Fig. 11H, the residue removing liquid 33 is discharged from the periphery of the upper surface of the substrate W, and is volatilized from the upper surface of the substrate W to be removed. A series of washing steps are terminated by performing spin drying.
於自基板W上排除殘渣去除液33時,如圖11H以二點鏈線所示,控制器3亦可將閥74C打開,而使氣體自傾斜流噴出口93噴出。由自傾斜流噴出口93噴出之氣流所形成之傾斜氣流97衝撞於基板W之上表面,而將其方向改變成朝向平行於基板W之上表面之外方。When the residue removing liquid 33 is removed from the substrate W, the controller 3 can also open the valve 74C as shown by the two-dot chain line in FIG. 11H, and the gas can be ejected from the inclined flow ejection port 93. The inclined air current 97 formed by the air current ejected from the inclined flow ejection port 93 collides with the upper surface of the substrate W, and is changed in direction to be parallel to the outer surface of the substrate W.
其後,控制器3將閥74A、74B關閉,使來自移動噴嘴70之氣體之供給停止。Thereafter, the controller 3 closes the valves 74A, 74B to stop the supply of gas from the moving nozzles 70.
於殘渣去除步驟之後且旋轉乾燥步驟之前,如圖12A及圖12B所示,於將殘渣去除液33自基板W上排除時,亦可於殘渣去除液33之液膜之中央區域形成孔160,以將該孔160擴大之方式將殘渣去除液33自基板W上排除。After the residue removal step and before the spin drying step, as shown in FIGS. 12A and 12B, when the residue removal liquid 33 is removed from the substrate W, a hole 160 may be formed in the central portion of the liquid film of the residue removal liquid 33, The residue removal liquid 33 is removed from the substrate W so as to enlarge the hole 160.
詳細而言,參照圖12A,藉由自線狀流噴出口91朝向基板W之中心垂直地噴吹線狀氣流96,而於殘渣去除液33之液膜之中央區域形成孔160(開孔步驟)。參照圖12B,線狀氣流96衝撞於基板W之上表面,而將其方向改變成朝向平行於基板W之上表面之外方。因此,藉由線狀氣流96之噴吹力、及基板W之旋轉產生之離心力中之至少一者,孔160朝向基板W之外周擴大(擴孔步驟)。藉由使殘渣去除液33之液膜移動,而將殘渣去除液33向基板W外排除。於開孔步驟及擴孔步驟中,加熱器單元100可位於下位置(圖12A及圖12B中以實線所示之位置),亦可位於接近位置(圖12A及圖12B中以二點鏈線所示之位置)。Specifically, referring to FIG. 12A, the linear flow 96 is vertically sprayed from the linear flow ejection port 91 toward the center of the substrate W, and the hole 160 is formed in the central portion of the liquid film of the residue removal liquid 33 (opening step) ). Referring to FIG. 12B, the linear airflow 96 collides with the upper surface of the substrate W, and its direction is changed to be parallel to the outer surface of the substrate W. Therefore, the hole 160 is expanded toward the outer periphery of the substrate W by at least one of the blowing force of the linear airflow 96 and the centrifugal force generated by the rotation of the substrate W (reaming step). The residue removal liquid 33 is removed to the outside of the substrate W by moving the liquid film of the residue removal liquid 33. In the opening step and the reaming step, the heater unit 100 may be located at the lower position (the position shown by the solid line in FIGS. 12A and 12B), or may be located at the close position (the two-point chain in FIGS. 12A and 12B) The position shown by the line).
以上,對本發明之實施形態進行了說明,但本發明亦可以其他之形態實施。Although the embodiments of the present invention have been described above, the present invention may be embodied in other forms.
例如,為了加熱處理液,亦可取代將熱媒體28向基板W之背面供給,而利用來自燈或電加熱器等熱源之熱。基板W之加熱可於專用之腔室內實施。再者,微粒保持層29之成膜、剝離、及殘渣去除之各步驟可於各不相同之腔室內實施。For example, in order to heat the treatment liquid, instead of supplying the heat medium 28 to the back surface of the substrate W, heat from a heat source such as a lamp or an electric heater may be used. The heating of the substrate W can be carried out in a dedicated chamber. Further, the steps of film formation, peeling, and residue removal of the fine particle holding layer 29 can be carried out in different chambers.
處理液、剝離液及殘渣去除液例如可自線狀排列之複數個噴嘴孔大致同時地供給至基板W之上表面之大致整面。The treatment liquid, the peeling liquid, and the residue removal liquid can be supplied to substantially the entire surface of the upper surface of the substrate W at substantially the same time from a plurality of nozzle holes arranged in a line.
亦可對基板洗淨裝置1之洗淨方法之各步驟、實施形態中所示之步驟追加其他之步驟。Other steps may be added to the steps of the method of cleaning the substrate cleaning apparatus 1 and the steps shown in the embodiment.
作為溶質,除上述之各種樹脂外,亦可使用例如樹脂以外之有機化合物、或有機化合物與其他混合物。或,亦可為有機化合物以外之化合物。As the solute, in addition to the above various resins, an organic compound other than the resin, or an organic compound and other mixtures may be used. Alternatively, it may be a compound other than an organic compound.
作為剝離液,亦可使用非水系之其他剝離液。於該情形時,只要將形成難溶或不溶於該剝離液之微粒保持層29之溶質、對剝離液具有相溶性且對溶質具有溶解性之溶劑、對剝離液具有相溶性且對溶質具有溶解性之殘渣去除液等加以適當組合即可。As the stripping liquid, other non-aqueous stripping liquid can also be used. In this case, it is necessary to form a solvent which is insoluble or insoluble in the fine particle holding layer 29 of the stripping liquid, a solvent which is compatible with the stripping liquid and has solubility to the solute, is compatible with the stripping solution, and has solubility to the solute. The residue removal liquid or the like can be appropriately combined.
對本發明之實施形態詳細地進行了說明,但該等僅為用以闡明本發明之技術內容而使用之具體例,本發明不應限定解釋為該等具體例,本發明之範圍僅由隨附之申請專利範圍限定。The embodiments of the present invention have been described in detail, but these are only specific examples used to clarify the technical contents of the present invention, and the present invention is not limited to the specific examples, and the scope of the present invention is only attached. The scope of the patent application is limited.
本申請案對應於2017年9月22日向日本專利廳申請之特願2017-182550號、及2017年12月4日日本專利廳申請之特願2017-232847號,該等申請案之所有揭示以引用之方式併入本文中。The present application is directed to Japanese Patent Application No. 2017-182550, filed on Sep. 22, 2017, to the Japan Patent Office, and Japanese Patent Application No. 2017-232847, filed on Dec. The manner of reference is incorporated herein.
1‧‧‧基板洗淨裝置1‧‧‧Substrate cleaning device
2‧‧‧處理單元2‧‧‧Processing unit
2P‧‧‧處理單元2P‧‧‧Processing unit
3‧‧‧控制器3‧‧‧ Controller
3A‧‧‧處理器3A‧‧‧ processor
3B‧‧‧記憶體3B‧‧‧ memory
4‧‧‧旋轉夾盤4‧‧‧Rotating chuck
5‧‧‧處理液供給噴嘴5‧‧‧Processing liquid supply nozzle
6‧‧‧剝離液供給噴嘴6‧‧‧ Stripping liquid supply nozzle
7‧‧‧殘渣去除液供給噴嘴7‧‧‧Residue removal liquid supply nozzle
8‧‧‧旋轉銷8‧‧‧Rotary pin
9‧‧‧旋轉底座9‧‧‧Rotating base
9a‧‧‧貫通孔9a‧‧‧through hole
10‧‧‧旋轉軸10‧‧‧Rotary axis
11‧‧‧旋轉馬達11‧‧‧Rotary motor
12‧‧‧第1噴嘴移動機構12‧‧‧1st nozzle moving mechanism
13‧‧‧處理液供給管13‧‧‧Processing liquid supply pipe
14‧‧‧閥14‧‧‧Valve
15‧‧‧第2噴嘴移動機構15‧‧‧2nd nozzle moving mechanism
16‧‧‧供給管16‧‧‧Supply tube
17‧‧‧閥17‧‧‧ valve
18‧‧‧閥18‧‧‧ valve
19‧‧‧供給管19‧‧‧Supply tube
20‧‧‧閥20‧‧‧ valve
22‧‧‧殘渣去除液供給管22‧‧‧Residue removal liquid supply pipe
23‧‧‧閥23‧‧‧Valves
24‧‧‧熱媒體供給噴嘴24‧‧‧Hot media supply nozzle
24a‧‧‧噴出口24a‧‧‧Spray outlet
25‧‧‧熱媒體供給管25‧‧‧Hot media supply tube
26‧‧‧閥26‧‧‧Valves
27‧‧‧處理液27‧‧‧Processing fluid
28‧‧‧熱媒體28‧‧‧Hot media
29‧‧‧微粒保持層29‧‧‧Particle retention layer
30‧‧‧微粒30‧‧‧ particles
31‧‧‧DIW31‧‧‧DIW
32‧‧‧SC1液32‧‧‧SC1 fluid
33‧‧‧殘渣去除液33‧‧‧Residue removal solution
40‧‧‧處理杯40‧‧‧Processing Cup
41‧‧‧防擋41‧‧‧Anti-block
41A‧‧‧第1防擋41A‧‧‧1st anti-block
41B‧‧‧第2防擋41B‧‧‧2nd block
42‧‧‧杯42‧‧‧ cup
42A‧‧‧第1杯42A‧‧‧1st Cup
42B‧‧‧第2杯42B‧‧‧2nd Cup
43‧‧‧外壁構件43‧‧‧External wall members
44‧‧‧防擋升降機構44‧‧‧Anti-lifting mechanism
50‧‧‧對向構件50‧‧‧ opposite components
50a‧‧‧對向面50a‧‧‧ opposite
51‧‧‧中空軸51‧‧‧ hollow shaft
52‧‧‧對向構件升降機構52‧‧‧ opposite member lifting mechanism
53‧‧‧噴嘴收容構件53‧‧‧Nozzle receiving member
60‧‧‧氣體供給噴嘴60‧‧‧ gas supply nozzle
61‧‧‧氣體供給管61‧‧‧ gas supply pipe
62‧‧‧閥62‧‧‧ valve
65‧‧‧清洗液供給噴嘴65‧‧‧cleaning liquid supply nozzle
66‧‧‧清洗液供給管66‧‧‧cleaning liquid supply pipe
67‧‧‧閥67‧‧‧Valves
70‧‧‧移動噴嘴70‧‧‧ moving nozzle
71‧‧‧殘渣去除液供給管71‧‧‧Residue removal liquid supply pipe
72A‧‧‧第1氣體供給管72A‧‧‧1st gas supply pipe
72B‧‧‧第2氣體供給管72B‧‧‧2nd gas supply pipe
72C‧‧‧第3氣體供給管72C‧‧‧3rd gas supply pipe
73‧‧‧閥73‧‧‧Valves
74A‧‧‧閥74A‧‧‧Valve
74B‧‧‧閥74B‧‧‧Valve
74C‧‧‧閥74C‧‧‧ valve
75‧‧‧質流控制器75‧‧‧Flow Controller
76B‧‧‧流量可變閥76B‧‧‧Flow variable valve
76C‧‧‧流量可變閥76C‧‧‧Flow variable valve
77A‧‧‧過濾器77A‧‧‧Filter
77B‧‧‧過濾器77B‧‧‧Filter
77C‧‧‧過濾器77C‧‧‧Filter
80‧‧‧第3噴嘴移動機構80‧‧‧3rd nozzle moving mechanism
90‧‧‧中心噴出口90‧‧‧Center outlet
91‧‧‧線狀流噴出口91‧‧‧Line-shaped jet outlet
92‧‧‧水平流噴出口92‧‧‧ horizontal jet outlet
93‧‧‧傾斜流噴出口93‧‧‧Sloping spout
95‧‧‧水平氣流95‧‧‧ horizontal airflow
96‧‧‧線狀氣流96‧‧‧Linear airflow
97‧‧‧傾斜氣流97‧‧‧ oblique airflow
100‧‧‧加熱器單元100‧‧‧heater unit
100a‧‧‧對向面100a‧‧‧ opposite
101‧‧‧板本體101‧‧‧ board body
102‧‧‧支持銷102‧‧‧Support pins
103‧‧‧加熱器103‧‧‧heater
104‧‧‧供電線104‧‧‧Power supply line
105‧‧‧加熱器通電機構105‧‧‧heater energizing mechanism
106‧‧‧加熱器升降機構106‧‧‧heater lifting mechanism
107‧‧‧升降軸107‧‧‧ Lifting shaft
108‧‧‧夾盤銷驅動機構108‧‧‧The chuck pin drive mechanism
109‧‧‧連桿機構109‧‧‧ linkage mechanism
110‧‧‧驅動源110‧‧‧ drive source
160‧‧‧孔160‧‧‧ hole
A1‧‧‧旋轉軸線A1‧‧‧Rotation axis
C‧‧‧載具C‧‧‧ Vehicles
CR‧‧‧搬送機器人CR‧‧‧Transfer robot
IR‧‧‧搬送機器人IR‧‧‧Transfer robot
LP‧‧‧裝載器LP‧‧‧Loader
N2‧‧‧氮氣N2‧‧‧nitrogen
S1~S6‧‧‧步驟S1 ~ S6‧‧‧ steps
S2a‧‧‧步驟S2a‧‧‧ steps
S2b‧‧‧步驟S2b‧‧‧ steps
S3a‧‧‧步驟S3a‧‧‧ steps
S3b‧‧‧步驟S3b‧‧‧ steps
W‧‧‧基板W‧‧‧Substrate
圖1係顯示本發明之第1實施形態之基板洗淨裝置之佈局的圖解俯視圖。Fig. 1 is a schematic plan view showing the layout of a substrate cleaning apparatus according to a first embodiment of the present invention.
圖2係顯示上述基板洗淨裝置中具備之處理單元之概略構成之模式剖視圖。Fig. 2 is a schematic cross-sectional view showing a schematic configuration of a processing unit provided in the substrate cleaning apparatus.
圖3係顯示上述基板洗淨裝置之主要部分之電性構成之方塊圖。Fig. 3 is a block diagram showing the electrical configuration of a main part of the above substrate cleaning apparatus.
圖4係用以說明上述處理單元之基板洗淨之一例之流程圖。Fig. 4 is a flow chart for explaining an example of substrate cleaning of the above processing unit.
圖5A~圖5H係用以說明上述基板洗淨之情形之圖解剖視圖。5A to 5H are views showing an exploded view of the state in which the substrate is cleaned.
圖6A及圖6B係用以說明上述基板洗淨之微粒保持層之情形的圖解剖視圖。6A and 6B are schematic cross-sectional views for explaining the state of the substrate-cleaned particle-retaining layer.
圖7係顯示測定殘渣之個數之結果之圖表。Fig. 7 is a graph showing the results of measuring the number of residues.
圖8係顯示測定微粒去除率(PRE:Particle Removal Efficiency)之結果之圖表。Fig. 8 is a graph showing the results of measuring the particle removal efficiency (PRE: Particle Removal Efficiency).
圖9係顯示本發明之第2實施形態之處理單元之概略構成之模式剖視圖。Fig. 9 is a schematic cross-sectional view showing a schematic configuration of a processing unit according to a second embodiment of the present invention.
圖10係顯示第2實施形態之處理單元之電氣構成之方塊圖。Fig. 10 is a block diagram showing the electrical configuration of the processing unit of the second embodiment.
圖11A~圖11H係用以說明第2實施形態之處理單元之基板洗淨之情形之圖解剖視圖。11A to 11H are views showing the state of cleaning of the substrate of the processing unit of the second embodiment.
圖12A及圖12B係用以說明第2實施形態之處理單元之基板洗淨之另一例的圖解剖視圖。12A and 12B are views showing the other example of the substrate cleaning of the processing unit according to the second embodiment.
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