JP2019049418A - Thermal cycle testing device, thermal cycle testing method, production method of semiconductor device, and program - Google Patents

Abstract

To enhance reliability of a heat cycle test.SOLUTION: A thermal cycle testing device 100 comprises: an AE sensor 31 which detects acoustic emission (AE) from a substrate 3 formed by joining a plurality of materials different in a thermal expansion coefficient; a displacement sensor 33 which detects displacement of the substrate 3; and a recording unit 51 which records a set of the AE detected by the AE sensor 31 and the displacement detected by the displacement sensor 33. The detection of the AE generated in the substrate 3 by the AE sensor 31 specifies an occurrence timing of destruction of the substrate 3 in an H/C test. This, in combination with the detection of the displacement of the substrate 3 by the displacement sensor 33, enables specification of destruction mechanism of the substrate 3.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a thermal cycle test apparatus, a thermal cycle test method, a semiconductor device manufacturing method, and a program.

  For example, power semiconductor modules (simply referred to as semiconductor modules or semiconductor devices) in the main industrial fields such as renewable energy fields such as solar power generation and wind power generation, in-vehicle fields such as hybrid cars and electric cars, and railway fields such as vehicles. Power conversion systems such as power conditioners (PCS), inverters, smart grids, etc., are incorporated. Stable operation of these systems is particularly important in the main industrial field, and therefore high reliability of semiconductor modules is required. Here, the semiconductor module includes an insulated gate bipolar transistor (IGBT) suitable for high voltage and large current driving, for example. In recent years, since silicon carbide (SiC) semiconductor elements have been put into practical use and can operate at high temperatures, heat resistance has been particularly required as the reliability of semiconductor modules.

  In order to improve the heat resistance of the semiconductor module, a direct copper bonding (DCB) substrate obtained by bonding a copper substrate to insulating ceramics can be employed as a substrate on which a semiconductor element or the like is mounted. Here, as the DCB substrate, various materials, thicknesses, and the like are used according to performance, cost, and the like required for the semiconductor module. However, since the DCB substrate receives a thermal history due to, for example, a soldering process in the manufacturing process of the semiconductor module, the DCB substrate is subject to destruction due to thermal shock, or residual stress caused by different linear expansion coefficients between the insulating ceramic and the copper substrate. There is concern about being destroyed by change.

Therefore, as a method for evaluating the reliability of a semiconductor module, for example, in Patent Documents 1 and 2, cracks are generated in a substrate by detecting acoustic emission (AE) generated from the substrate while applying a thermal load or the like. An evaluation method for detecting this is disclosed. Here, AE refers to a phenomenon in which strain energy stored in a substrate is released as an elastic wave. Further, in Patent Documents 3 and 4, for example, a heat cycle test (H / H) for evaluating the occurrence and growth of cracks in a substrate by repeatedly applying a thermal load to the substrate by a temperature change (heat cycle) of −40 to 125 ° C., for example. C test) is disclosed.
Patent Document 1 Japanese Patent Application Laid-Open No. 61-97566 Patent Document 2 Japanese Patent Application Laid-Open No. 63-298153 Patent Document 3 Japanese Patent Application Laid-Open No. 2009-117614

  However, in the H / C test, usually, a substrate to be inspected is placed on a heating plate and heated, and then placed on a cooling plate to be cooled, a thermal load is applied to the substrate, and the test is interrupted as appropriate. Visually check for damage. Therefore, there is a problem that a long test time and human cost are required. In addition, the occurrence of initial micro cracks, the occurrence of cracks in the substrate may be overlooked, the timing at which cracks occur cannot be specified, the amount of deformation of the substrate can be measured by moving the substrate and applying a thermal load There is also the problem that it is difficult.

  In addition, since the above heat load becomes a factor which destroys not only a semiconductor module but the various joining bodies which joined the material from which a thermal expansion coefficient differs, it is also a subject common to the test of such a joining body.

(Item 1)
The thermal cycle test apparatus may include an AE detection unit that detects acoustic emission of a test object in which a plurality of materials having different thermal expansion coefficients are joined.
The thermal cycle test apparatus may include a displacement detection unit that detects the displacement of the test object.
The thermal cycle test apparatus may include a recording unit that records a set of acoustic emission detected by the AE detection unit and displacement detected by the displacement detection unit.

(Item 2)
The thermal cycle test apparatus may further include a stage on which the test object is placed and the temperature of the test object is controlled.

(Item 3)
The stage may be able to repeatedly heat and cool the test object with a predetermined period T (seconds).

(Item 4)
The thermal cycle test apparatus may further include a waveguide that contacts the test object during the thermal cycle test and propagates acoustic emission to the AE detector.

(Item 5)
In the waveguide, the area of the contact surface in contact with the test object may be smaller than the area of the contact surface in contact with the AE detection unit.

(Item 6)
The waveguide may be frustoconical or pyramidal.

(Item 7)
The waveguide may be made of ceramic.

(Item 8)
The displacement detector may detect the displacement of the test object via the waveguide.

(Item 9)
The first end face of the waveguide on the test object side may be pressed against the test object.
The AE detector may be fixed in contact with the second end surface of the waveguide opposite to the first end surface.
The displacement detection unit may detect relative movement of the set of the waveguide and the AE detection unit with respect to the displacement detection unit.

(Item 10)
The thermal cycle test apparatus may further include a support unit that suspends and supports the waveguide body and the AE detection unit.
The displacement detector may detect vertical movement of the waveguide and the AE detector.

(Item 11)
The support part may suspend the waveguide and the AE detection part by an elastic member.

(Item 12)
A support part may support the position of the upper end of an expansion-contraction member so that adjustment is possible to an up-down direction.

(Item 13)
The displacement detection unit may include a differential transformer.
The AE detector may be fixed to the movable magnetic core of the differential transformer.

(Item 14)
The displacement detector may calculate the displacement of the test object itself by subtracting the reference displacement of the stage from the measured displacement measured at the measurement position of the test object.

(Item 15)
The displacement detection unit subtracts the reference displacement measured at the part where the test object is not placed on the stage during a calibration cycle different from the thermal cycle test of the test object, thereby subtracting the displacement of the test object itself. May be calculated.

(Item 16)
The displacement detection unit may include a first displacement measurement unit that measures the measurement displacement in contact with the measurement position of the test object during the thermal cycle test of the test object.
The displacement detection unit may include a second displacement measurement unit that measures the reference displacement in contact with the stage during the thermal cycle test.

(Item 17)
The displacement detector calculates the displacement of the test object itself by subtracting the first reference displacement measured while raising the temperature of the stage from the measured displacement measured while raising the temperature of the test object. You can do it.
The displacement detector calculates the displacement of the test object itself by subtracting the second reference displacement measured while lowering the stage temperature from the measured displacement measured while lowering the temperature of the test object. You can do it.

(Item 18)
The stage may have a heat stage on which the test object is placed so that it can be heated.
The stage may have a cooling member provided on the surface side opposite to the surface on which the test object is placed on the heat stage.
The thermal cycle test apparatus may include a cooling unit that cools the heat stage.

(Item 19)
The cooling unit may cool the heat stage by supplying a cooling liquid to the cooling member.

(Item 20)
The cooling unit may supply the cooling liquid to the cooling member even while the test object is heated by the heat stage.

(Item 21)
The thermal cycle test apparatus may further include a chamber that covers the test object and at least a member in contact with the test object in the thermal cycle test apparatus.

(Item 22)
The thermal cycle test apparatus may further include a gas sensor that is provided outside the chamber and detects that a gas filling the chamber has leaked to the outside of the chamber.

(Item 23)
The recording unit may record the time series data of acoustic emission detected by the AE detection unit and the time series data of displacement detected by the displacement detection unit.

(Item 24)
The recording unit may further record time series data of the temperature given to the test object.

(Item 25)
The thermal cycle test apparatus may further include a destruction determination unit that determines that the test object is destroyed when the acoustic emission of the test object detected during the thermal cycle test exceeds a threshold value.

(Item 26)
The destruction determination unit may further determine the type of destruction that has occurred in the test object based on the acoustic emission and displacement of the test object detected during the thermal cycle test.

(Item 27)
The destruction determination unit may further determine which material portion of the plurality of materials in the test object is broken based on the frequency component of the acoustic emission of the test object.

(Item 28)
The recording unit may further record a moving image obtained by imaging the test object during the thermal cycle test.

(Item 29)
In the thermal cycle test method, the acoustic emission of the test object may be detected during the thermal cycle test of the test object in which a plurality of materials having different coefficients of thermal expansion are joined.
In the thermal cycle test method, the displacement of the test object may be detected during the thermal cycle test.
The thermal cycle test method may record a set of detected acoustic emissions and detected displacement.

(Item 30)
In the thermal cycle test method, the test object may be repeatedly heated and cooled at a predetermined period T (seconds).

(Item 31)
The test object may be a substrate in which a metal plate, an insulating plate, and a wiring board are sequentially laminated.
The thermal cycle test method may be performed while applying a thermal load to the substrate by flattening the substrate by heating and then warping it during temperature elevation.

(Item 32)
The method for manufacturing a semiconductor device may include a step of preparing a substrate.
The method for manufacturing a semiconductor device may include a step of testing a substrate by the thermal cycle test method described in Item 31.
The method for manufacturing a semiconductor device may include a step of assembling the semiconductor device using the substrate selected in the testing step.

(Item 33)
The program may cause the computer to detect the acoustic emission of the test object during the thermal cycle test of the test object in which a plurality of materials having different coefficients of thermal expansion are joined.
The program may cause the computer to detect the displacement of the test object during the thermal cycle test.
The program may cause a computer to record a set of detected acoustic emissions and detected displacement.

  It should be noted that the above summary of the invention does not enumerate all the necessary features of the present invention. In addition, a sub-combination of these feature groups can also be an invention.

The structure of the thermal cycle test apparatus which concerns on this embodiment is shown. The structure of the control system of a thermal cycle test apparatus is shown. The structure of the substrate is shown in a top view. The deformation state of the substrate is shown in a side view. The deformation | transformation state of the board | substrate at the time of a heating is shown in a side view. The procedure of the H / C test is shown. An example of the result of a H / C test is shown. Another example of the result of the H / C test is shown. Another example of the result of the H / C test is shown. The procedure of the manufacturing method of a semiconductor device is shown. 1 shows a schematic configuration of a semiconductor device. 2 shows an exemplary configuration of a computer according to the present embodiment.

  Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. In addition, not all the combinations of features described in the embodiments are essential for the solving means of the invention.

  1 and 2 show the configuration of a thermal cycle test apparatus 100 according to the present embodiment and a control system of the apparatus, respectively. Here, the vertical direction in FIG. 1 is also referred to as a height direction. The thermal cycle test apparatus 100 automates the H / C test of the test object, thereby shortening the test time and reducing the human cost, and generating and timing of cracks in the test object during the H / C test. In addition, by detecting the displacement of the test object, not only the reliability of the test is improved but also the analysis of the destruction mechanism of the test object is made possible. The thermal cycle test apparatus 100 includes a chamber 9, a gas sensor 8, a frame 10, a stage system 20, a detection unit 30, a control unit 50, and an input / output unit 59. It is assumed that the thermal cycle test apparatus 100 is supported on the base B.

  In the thermal cycle test apparatus 100 according to this embodiment, for example, a DCB (Direct Copper Bonding) substrate, an AMB (Active Metal Brazing) substrate, or any other substrate on which a semiconductor element or the like is mounted in a semiconductor device is a test target of the H / C test. It is a thing.

  FIG. 3A shows an example of the configuration of the substrate 3. The substrate 3 includes an insulating plate 3a, a metal plate 3b, and a wiring board 3c. The insulating plate 3a is a plate-like member formed from an insulating ceramic such as aluminum nitride, silicon nitride, or aluminum oxide to a thickness of 0.2 to 1 mm, for example. The metal plate 3b is joined to the back surface of the insulating plate 3a with a film thickness of, for example, 0.1 to 1 mm using a conductive metal such as copper or aluminum, for example, via a silver solder. Similar to the metal plate 3b, the wiring board 3c is joined to the front surface of the insulating plate 3a through a silver solder using a conductive metal such as copper or aluminum. Copper may contain a copper alloy containing copper as a main component, and aluminum may contain an aluminum alloy containing aluminum as a main component.

  The wiring board 3c has, for example, three circuit patterns. The first circuit pattern is, for example, a pattern on which a semiconductor element is mounted, and is disposed on the lower side of the drawing (left side in FIG. 1) on the insulating plate 3a. The second and third circuit patterns are patterns in which, for example, conductive posts, terminals, and the like are erected, and are arranged side by side on the insulating plate 3a on the upper left and right sides of the drawing (on the right side and on the right side in FIG. 1). . When the linear expansion coefficients of the wiring board 3c and the metal plate 3b are equal and the volume of the metal plate 3b is larger than the wiring board 3c, the substrate 3 becomes convex upward at room temperature, as shown in FIG. 3B. As shown, it flattens when heated. Here, a displacement amount Δ of the substrate 3 is defined as shown in FIG. 3B. In an aspect in which the volume of the metal plate 3b is larger than the wiring board 3c, the thickness of the wiring board 3c and the metal plate 3b is equal, and the area of the main surface of the metal plate 3b is larger than the area of the main surface of the wiring board 3c. May include.

  In the present embodiment, the substrate 3 is adopted as a test object of the H / C test by the thermal cycle test apparatus 100. However, the test object is not limited to a single substrate, and a plurality of materials having different thermal expansion coefficients are joined. A substrate on which a semiconductor element is mounted may be used as long as the device is included, or a semiconductor device including the substrate may be used. Further, the substrate is not limited to a substrate used in a semiconductor device, and may be a substrate for any application.

  Returning to FIG. 1 and FIG. 2, the chamber 9 is a box-shaped member that covers the components of the substrate 3 and the thermal cycle test apparatus 100, at least the member such as the stage 21 that contacts the substrate 3. The chamber 9 can be formed into a transparent box shape using, for example, acrylic. Thereby, the components of the substrate 3 and the thermal cycle test apparatus 100 are hermetically accommodated in the chamber 9, and the inside can be evacuated or filled with an inert gas or the like to perform the H / C test. The state of the substrate 3 under test and the thermal cycle test apparatus 100 can be visually recognized from the outside.

  The gas sensor 8 is a sensor that detects a gas such as an inert gas filled in the chamber 9. The gas sensor 8 is provided outside the chamber 9. Thereby, it can be detected that the gas filling the chamber 9 has leaked to the outside of the chamber 9. An alarm device including the gas sensor 8 may be provided.

  The frame 10 is a structure that supports each component of the thermal cycle test apparatus 100 on the base B, and includes a pole 11, a top plate 12, a middle plate 13, a support portion 14, a support member 15, and an imaging device 16. Composed.

  The pole 11 is a columnar member that supports the top plate 12 and the middle plate 13 on the base B, and is erected on the base B one on each of the left and right and front and rear in the drawing (that is, a total of four).

  The top plate 12 is a plate-like member that supports the support portion 14, and is fixedly supported on the upper ends of the four poles 11.

  The support unit 14 is a member group that supports the detection unit 30 including an acoustic emission sensor 31, a waveguide 32, and the like, which will be described later, from the top plate 12, and includes a support member 14a and a telescopic member 14b. The support member 14 a is a block body that supports the elastic member 14 b on the lower surface side of the top plate 12. The support member 14a is fixed by penetrating the top plate 12, and can be fixed at an arbitrary position by moving its lower end in the vertical direction. The telescopic member 14b is, for example, a spring, and its upper end is fixed to the lower end of the support member 14a so that the position can be adjusted in the vertical direction, and the detection unit 30 (that is, the upper end of the movable magnetic core of the differential transformer) is suspended at the lower end. Lower. In addition, the elastic member 14b may be detachably fixed between the support member 14a and the detection unit 30. By suspending the detection unit 30 by the elastic member 14b and preventing its weight from being excessively applied to the local range of the substrate 3, the detection unit 30 can be displaced without obstructing the original displacement of the substrate 3 by its weight. It is possible to follow and measure the displacement of the substrate 3 accompanying the thermal load.

  The intermediate plate 13 is a plate-like member that supports the support member 15, and is fixedly supported by the body portions of the four poles 11. A through-hole 13a is formed in the middle of the middle plate 13, that is, directly below the support member 14a fixed to the top plate 12, so that a movable magnetic core of a differential transformer, which will be described later, passes vertically.

  The support member 15 is a member that fixes and supports the coil portion of the differential transformer on the intermediate plate 13, and is supported on the edge portion of the through hole 13 a formed in the intermediate plate 13.

  The imaging device 16 is a device that images the substrate 3 supported on the stage 21 during the H / C test, and is fixed to the lower surface of the intermediate plate 13 toward the upper surface of the stage 21. The imaging result, that is, the moving image is transmitted to the control unit 50 (recording unit 51).

  The stage system 20 is a group of devices that support the substrate 3 and heat and cool it, and includes a stage 21, a stage drive unit 23, a heating unit 24, and a cooling unit 25.

  The stage 21 places the substrate 3 on its upper surface and controls its temperature, and includes a heat stage 21a and a water-cooled cooling plate 21b.

  The heat stage 21a is a member on which the substrate 3 is placed so as to be heatable, and is a plate-like member made of aluminum nitride (AlN) as an example. The upper surface of the heat stage 21a may be a flat surface that does not have pins, support members and the like for positioning the substrate 3 in the horizontal direction. The heat stage 21 a includes a heating wire (not shown) and a temperature sensor 22. The heating wire is stretched inside the heat stage 21a and generates heat when energized by a heating unit 24 described later, and uniformly heats the entire heat stage 21a to a high temperature of, for example, 100 to 400 degrees. The temperature sensor 22 is a sensor that measures the temperature of the heat stage 21a (equal to the temperature of the substrate 3 placed on the stage 21), and may be a thermocouple, for example. The measurement result is transmitted to the control unit 50 (recording unit 51).

  The water-cooled cooling plate 21b is an example of a cooling member that cools the heat stage 21a, and the upper surface of the heat stage 21a is provided in close contact with the lower surface of the heat stage 21a opposite to the upper surface on which the substrate 3 is placed. It has been. The water-cooled cooling plate 21b is formed with a flow path so as to extend inside, and is cooled to a low temperature of, for example, 0 to 20 degrees by supplying a cooling liquid to the flow path. By cooling the water-cooled cooling plate 21b, the heat stage 21a in close contact therewith is cooled. The cooling liquid is not limited to the cooling water, and any cooling liquid may be used, thereby cooling the water-cooled cooling plate 21b to a low temperature of -10 to 20 degrees.

  The stage 21 having the above-described configuration heats the heat stage 21a on which the substrate 3 is placed, stops the heating of the heat stage 21a, and cools the water-cooled cooling plate 21b in close contact with the heat stage 21a. By heating and cooling the stage 21 on which the substrate 3 is placed, it can be quickly heated and cooled without moving while the substrate 3 is placed.

  The stage drive unit 23 is a device or a device group that supports the stage 21 on the base B and drives it in a direction parallel to the upper surface thereof. The stage drive unit 23 can be configured by, for example, a first conductive motor that drives the stage 21 in a uniaxial direction in the upper surface of the base B and a second conductive motor that drives the stage 21 in a direction orthogonal to the uniaxial direction. . The controller 50 images the substrate 3 using the imaging device 16 to detect the position thereof, transmits the target position according to the detection result, and controls the stage drive unit 23 to be placed on the stage 21. The measurement position 3d on the substrate 3 (for example, the center of the substrate 3 shown in FIG. 3A) can be positioned immediately below the waveguide 32.

  The heating unit 24 is controlled by the control unit 50 and heats the heat stage 21a by energizing a heating wire provided in the heat stage 21a.

  The cooling unit 25 is controlled by the control unit 50 to supply the cooling liquid to the water-cooled cooling plate 21b via the pipe 25a and cool it, thereby cooling the heat stage 21a that is in close contact with the water-cooled cooling plate 21b. The cooling unit 25 may cool the coolant flowing out from the water-cooled cooling plate 21b and supply it again to the water-cooled cooling plate 21b, that is, circulate it. Further, the cooling unit 25 may cool the heat stage 21a by supplying the coolant to the water-cooled cooling plate 21b while the substrate 3 is heated by the heat stage 21a.

  The detection unit 30 is a group of devices that detect the acoustic emission generated in the substrate 3 during the H / C test and detect the displacement of the substrate 3. The acoustic emission sensor 31, the waveguide 32, and the displacement sensor 33 are included in the detection unit 30. including.

  The acoustic emission sensor (AE sensor) 31 is a sensor (an example of an AE detection unit) that detects the acoustic emission of the substrate 3. Here, AE has a relatively high frequency of several kHz to several MHz, for example. Therefore, for example, a piezo (PZT) element can be adopted. As the AE sensor 31, a wave receiving plate formed of an insulator such as alumina, a PZT element disposed on the wave receiving plate, and aluminum that accommodates the PZT element therein. A sensor including a shield case (all not shown) formed from a metal such as stainless steel can be employed. An output line extends from the PZT element to the outside of the shield case, and an AE detection result is transmitted to the control unit 50 (recording unit 51) through the output line.

  Note that the upper surface side of the AE sensor 31 is held by the holding member 31 a and is fixed to the displacement sensor 33.

  The waveguide body 32 is a member that contacts the substrate 3 and propagates AE to the AE sensor 31. Here, the heat-resistant temperature of the AE sensor 31 is, for example, 100 ° C., whereas the substrate 3 becomes a high temperature of, for example, 400 ° C. in the H / C test, so that the AE sensor 31 cannot be brought into contact with the substrate 3. . Therefore, only the AE can be transmitted to the AE sensor 31 through the waveguide 32 without transmitting the heat of the substrate 3. In addition, since AE having a relatively high frequency is greatly attenuated in the air, AE generated in the substrate 3 can be efficiently transmitted to the AE sensor 31 via the waveguide 32.

  The waveguide 32 is fixed so that the distal end surface is pressed against the substrate 3 and the proximal end surface is in contact with the lower surface (that is, the wave receiving plate) of the AE sensor 31. The waveguide 32 can be formed, for example, in a truncated cone shape or a truncated pyramid shape using ceramic as a material, that is, the area of the distal end surface contacting the substrate 3 is smaller than the area of the proximal end surface contacting the AE sensor 31. By increasing the base end face, AE can be efficiently detected by the AE sensor, and by reducing the front end face, local displacement of the substrate 3 can be detected as will be described later. Further, since the waveguide 32 stably contacts the substrate 3 with such a shape, the displacement of the substrate 3 can be measured with high accuracy via the waveguide 32.

  The displacement sensor 33 is a sensor (an example of a displacement detection unit) that detects the displacement of the substrate 3, and a differential transformer can be employed as an example. The differential transformer has, for example, a cylindrical movable magnetic core and a coil portion surrounding the side surface. The movable magnetic core is movable with respect to the coil portion, and the position of the movable magnetic core with respect to the coil portion can be detected from the coil electromotive voltage that changes according to the position of the movable magnetic core. The upper end of the movable magnetic core is detachably fixed to the lower end of the expandable member 14 b of the support portion 14, and the lower end is fixed to a gripping member 31 a that grips the AE sensor 31.

  In the detection unit 30 of the present embodiment, the displacement sensor 33 (the movable magnetic core of the differential transformer) supports the AE sensor 31 and the waveguide 32 and supports the tip of the waveguide 32 in contact with the substrate 3. It is suspended and supported by the portion 14. The displacement sensor 33 detects the displacement in the height direction at the measurement position 3d of the substrate 3 with which the tip surface abuts via the waveguide 32 by detecting the vertical movement of the AE sensor 31 and the waveguide 32. be able to. Here, the displacement sensor 33 detects the relative movement of the set of the AE sensor 31 and the waveguide 32 with respect to the coil portion of the differential transformer fixed on the intermediate plate 13 by the support member 15. Details of detection of displacement of the substrate 3 by the displacement sensor 33 will be described later.

  A plurality of detection units 30 that are suspended and supported by the top plate 12 by the support unit 14 may be provided. Thereby, the tips of the respective waveguide bodies 32 of the plurality of detection units 30 are brought into contact with a plurality of positions of the substrate 3 and the AE is detected by the respective AE sensors 31, that is, the generation position of the AE in the substrate 3, that is, It is possible to accurately specify the position where the crack occurs, and to detect the displacement at a plurality of positions of the substrate 3. Further, when the substrate 3 is deformed and the heights at a plurality of positions are different, the suspension height of the AE sensor 31 and the waveguide 32 by the support unit 14 may be changed for each of the plurality of detection units 30.

  The control unit 50 is a functional unit that controls the stage driving unit 23, the heating unit 24, and the cooling unit 25, and evaluates the reliability of the substrate 3 based on the detection result of the AE. The control unit 50 includes a recording unit 51, a command unit 52, and a destruction determination unit 53. The control unit 50 expresses each functional unit by causing an information processing device including a computer, a microcontroller, etc. to execute a control program stored in a storage device such as a nonvolatile memory or a recording medium such as a CD-ROM. To do.

  The recording unit 51 records the AE detected by the AE sensor 31 and the displacement set of the substrate 3 detected by the displacement sensor 33. A set of the AE and the displacement of the substrate 3 is recorded as time series data with respect to the detection time, for example. The recording unit 51 further includes time series data of the temperature of the heat stage 21 a from the temperature sensor 22, that is, the temperature applied to the substrate 3, a moving image of the substrate 3 captured during the H / C test from the imaging device 16, and a gas from the gas sensor 8. The detection result may be recorded.

  The command unit 52 controls the stage drive unit 23, the heating unit 24, and the cooling unit 25 based on various data recorded by the recording unit 51. For example, the command unit 52 detects the position of the substrate 3 or the stage 21 from the moving image of the substrate 3, transmits the target position according to the detection result, and controls the stage drive unit 23, thereby setting the stage 21 to the base B. It is driven in a direction parallel to the upper surface. Thereby, for example, the measurement position 3 d on the substrate 3 placed on the stage 21 can be positioned immediately below the waveguide 32. Further, the command unit 52 heats the heat stage 21a via the heating and / or water-cooled cooling plate 21b by determining the target temperature from the detection result of the temperature of the heat stage 21a and controlling the heating unit 24 and the cooling unit 25. The stage 21a is cooled.

  The destruction determination unit 53 compares the AE intensity of the substrate 3 detected during the H / C test with a threshold, and the substrate 3 is destroyed due to a crack or the like when the AE intensity exceeds the threshold. judge. When the destruction determination unit 53 confirms that the intensity of the AE exceeds the threshold value, the heating / cooling of the stage 21 is stopped by the heating unit 24 and the cooling unit 25 via the command unit 52 and the H / C You may stop the test. The threshold value may be set and changed via the input / output unit 59.

  Here, the destruction determination unit 53 determines the type of destruction that has occurred in the substrate 3 based on the AE and displacement of the substrate 3. As a mode of destruction that occurs in the substrate 3, for example, a mode in which cracks enter the insulating plate 3a from the corners of the metal plate 3b and this gradually changes the inclination in the insulating plate 3a and progresses in the horizontal direction (this mode is referred to as A mode). 2) and a mode of developing along the interface with the insulating plate 3a from the end of the metal plate 3b (this mode is referred to as a B mode). In the A-mode fracture, the crack rapidly develops in the insulating plate 3a at a moment when the stress threshold is exceeded due to the accumulated deformation of the substrate 3, but the AE generated thereby has a small strength. It is expected to occur once in a short time. On the other hand, in the destruction of the B mode, the crack progresses in a wide range while causing a large deformation due to the separation of the interface between the metal plate 3b and the insulating plate 3a of the substrate 3, so that the generated AE has a high strength. It is expected to occur many times continuously. Therefore, the destruction determination unit 53 determines that the A-mode destruction has occurred in the substrate 3 when a low-strength AE is detected with a relatively small deformation of the substrate 3, and the substrate 3 undergoes a relatively rapid deformation. At the same time, it can be determined that B-mode destruction has occurred in the substrate 3 when a high-strength AE is detected.

  Furthermore, the destruction determination unit 53 may determine which material portion of the plurality of materials in the test object has been broken, based on the frequency component of the AE of the substrate 3. Since the frequency of the AE differs depending on the material in which the breakdown occurs, it is possible to determine which material portion has the breakdown by analyzing the frequency component of the AE on the substrate 3.

  The input / output unit 59 is a device group for inputting parameters such as H / C test conditions to the control unit 50 and displaying the test results of the H / C test. The input / output unit 59 includes an input device such as a mouse and a keyboard, and an output device such as a display monitor.

  A method for detecting the displacement of the substrate 3 by the displacement sensor 33 will be described.

  In the thermal cycle test apparatus 100 according to the present embodiment, the stage 21 is heated and cooled to heat and cool the substrate 3 placed thereon. Therefore, in principle, the displacement of the substrate 3 detected by the displacement sensor 33 can include not only the displacement associated with the thermal deformation of the substrate 3 but also the displacement of the stage 21 associated with the thermal expansion and contraction of the stage 21. When the displacement of the stage 21 is not negligible, the displacement sensor 33 subtracts the displacement (referred to as reference displacement) of the stage 21 from the displacement (referred to as measurement displacement) measured at the measurement position 3d of the substrate 3. The displacement of 3 itself is calculated.

  The reference displacement is obtained, for example, by measuring the displacement of the portion of the stage 21 where the substrate 3 is not placed during a calibration cycle different from the H / C test of the substrate 3 by the displacement sensor 33. The obtained reference displacement is transmitted to the control unit 50 and recorded as a set with the temperature of the stage 21 by the recording unit 51, and the temperature of the stage 21 when the measured displacement is measured by the displacement sensor 33 during the H / C test. The reference displacement corresponding to is read out.

  Note that the reference displacement may differ between when the temperature of the stage 21 is raised and when it is lowered. Therefore, the reference displacement (referred to as the first reference displacement) may be measured while raising the temperature of the stage 21, or the reference displacement (referred to as the second reference displacement) while decreasing the temperature of the stage 21 independently of this. ) May be measured. The displacement sensor 33 calculates the displacement of the substrate 3 itself by subtracting the first reference displacement from the measured displacement measured while raising the temperature of the substrate 3, while lowering the temperature of the substrate 3. The displacement of the substrate 3 itself may be calculated by subtracting the second reference displacement from the measured displacement measured in step (1).

  Note that a plurality of detection units 30 may be provided to measure the measurement displacement and the reference displacement of the substrate during the H / C test. For example, the displacement sensor 33 (an example of a first displacement measurement unit) included in one of the plurality of detection units 30 is guided to the measurement position 3d of the substrate 3 during the H / C test of the substrate 3. The measured displacement is measured by contacting the tip of the wave body 32, and the same H / C test is being performed by a displacement sensor 33 (an example of a second displacement measuring unit) included in another detecting unit 30 among the plurality of detecting units 30. In addition, the reference displacement may be measured by bringing the tip of the waveguide 32 into contact with the reference position of the stage 21 that supports the substrate 3 (for example, an arbitrary position on the upper surface outside the mounting region of the substrate 3).

  FIG. 4 shows the procedure of the H / C test by the thermal cycle test apparatus 100 according to this embodiment.

  In step S <b> 1, the user places the substrate 3 that is the test object on the stage 21.

  In step S <b> 2, the user covers the components of the substrate 3 and the thermal cycle test apparatus 100 using the chamber 9 and seals them, and the chamber 9 is evacuated or filled with an inert gas or the like.

  In step S <b> 3, the measurement position 3 d on the substrate 3 is positioned immediately below the waveguide body 32. When the user instructs the positioning of the substrate 3 from the input / output unit 59, the control unit 50 images the substrate 3 using the imaging device 16, detects the position, determines the target position according to the detection result, and sets the stage. The drive unit 23 is controlled. Thereby, the stage drive unit 23 drives the stage 21 on which the substrate 3 is placed, and positions the measurement position 3d on the substrate 3 immediately below the waveguide 32.

  In step S4, an H / C test is performed on the substrate 3. In the H / C test, the heating unit 24 heats the heat stage 21a of the stage 21 on which the substrate 3 is placed to maintain a high temperature of about 260 degrees, for example, for 30 seconds, and then the cooling unit 25 performs water-cooling cooling of the stage 21. The plate 21b is cooled to hold a low temperature of about 20 degrees, for example, for 450 seconds. While this one heat cycle is repeated 20 times or more to apply a thermal load to the substrate 3, the substrate 3 is imaged by the imaging device 16, the temperature of the heat stage 21 a is detected by the temperature sensor 22, and the substrate 3 is detected by the AE sensor 31. AE is detected, the displacement sensor 33 detects the displacement of the substrate 3, and the recording unit 51 records a set of these detection results.

  In addition, when the control part 50 complete | finishes a predetermined number of heat cycles, or when it can confirm that the intensity | strength of AE detected by the destruction determination part 53 exceeded a threshold value and the board | substrate 3 was destroyed. The H / C test is terminated. The control unit 50 stops the heating unit 24 and the cooling unit 25, controls the stage driving unit 23, and retracts the stage 21 from directly below the waveguide body 32.

  In step S5, the destruction determination unit 53 determines whether or not the substrate 3 is broken based on the result of the H / C test.

  5A to 5C show an example of the result of the H / C test for three substrates 3 (referred to as substrates A, B, and C, respectively for convenience). Note that the displacement in the initial state is zero. FIG. 5A shows the result after 14000 seconds have elapsed from the start of the test and a change starts to appear on the substrate A. Here, the substrates A and B are AMB substrates in which a wiring board 3c made of copper, an insulating board 3a made of silicon nitride, and a metal board 3b made of copper are laminated. The thicknesses of the wiring board 3c, the insulating board 3a, and the metal plate 3b are 1.0 mm, 0.3 mm, and 1.0 mm, respectively. The substrate C is an AMB substrate in which a wiring board 3c formed of copper, an insulating plate 3a formed of aluminum nitride, and a metal plate 3b formed of copper are stacked. The thicknesses of the wiring board 3c, the insulating board 3a, and the metal plate 3b are 0.3 mm, 0.4 mm, and 0.3 mm, respectively. The lengths of the short side and the long side of the metal plate 3b are 17 mm and 21 mm, respectively.

  The conditions of the H / C test are as follows: the heating temperature for the substrate A is 260 ° C., the heating and cooling cycle T is 500 seconds, the heating temperature for the substrate B is 260 ° C., and the heating and cooling cycle. T was 500 seconds, the heating temperature for the substrate C was 350 ° C., and the heating and cooling cycle T was 450 seconds. In the H / C test of the substrate 3, the maximum heating temperature is 400 ° C. or less, for example, 350 ° C. or 260 ° C., the temperature rising rate is preferably 5 K / second or less, and the heating and cooling cycle T is preferably 300 seconds or more. The upper limit is not particularly limited, but is 450 seconds or 500 seconds, for example. At the time of heating, when the preset maximum temperature is reached, the cooling may be started immediately, or the maximum temperature may be maintained for a predetermined time.

  The substrate A in FIG. 5A displaces the measurement position 3d downward by being heated in one heat cycle, and is deformed upward by cooling to displace the measurement position 3d upward. Here, the substrate A is rapidly displaced downward within a short heating period, and is gradually displaced upward within a long cooling period. The amount of upward displacement is increased by repeating the heat cycle.

  In the repetition of the heat cycle for the substrate A, generation of AE due to two destruction mechanisms can be confirmed. One is when the substrate A is heated, and because the AE of high strength is concentrated and generated within a short period when the substrate A is suddenly displaced, the B-mode destruction occurs in the substrate A. I understand. On the other hand, when the substrate A is cooled, AE having a small intensity is generated discretely within a long period in which the substrate A is gradually displaced, so that the A mode breakage occurs in the substrate A. I understand. The destruction determination unit 53 determines that the B-mode destruction has occurred in the substrate A from the high-strength AE that has occurred during the period in which the substrate A is suddenly displaced, and within the period in which the substrate A is gradually displaced. It is determined that the A-mode breakage has occurred in the substrate A from the low-strength AE generated in step (b).

  The substrate B of FIG. 5B displaces the measurement position 3d downward by being heated in one heat cycle, and is deformed upward by cooling to displace the measurement position 3d upward. Here, the substrate B is suddenly displaced downward within a short heating period, is suddenly displaced upward at an early stage within a long cooling period, and thereafter the displacement is maintained substantially constant. By repeating the heat cycle, the displacement is gradually increased in the negative direction.

  In the repetition of the heat cycle for the substrate B, generation of AE due to one destruction mechanism can be confirmed. During the heating of the substrate B, the substrate B has undergone A-mode destruction because some low-intensity AEs are generated within a period in which the substrate B is rapidly displaced with a small displacement. I understand that. The destruction determination unit 53 determines that the A-mode destruction has occurred in the substrate B from the low-intensity AE that occurs during the period in which the substrate B is displaced by a small displacement amount.

The substrate C in FIG. 5C is heated in one heat cycle, so that the measurement position 3d is temporarily displaced downward in period 1 to become flat compared to the initial state or the immediately previous state, and further heated and heated. Then, in the subsequent period 2, the measurement position 3d is displaced upward by being deformed upward. Here, flattening may include that the displacement amount Δ is smaller than that in the initial state or immediately before, and deforming in a convex shape may include increasing the displacement amount Δ before deformation. The shape deformed into a convex shape is maintained during the cooling of the subsequent period 3. By repeating the heat cycle, the amount of displacement gradually increases in the positive direction, and the warpage of the substrate C increases. Here, the substrate C has a convex shape upward at room temperature (displacement Δ _i ), and becomes flat (displacement Δ _H ) in the heating period of period 1 compared to that at room temperature in the heating cycle, and heating in period 2 Warpage again (displacement Δ _H-C ) during the temperature rising period, warpage is maintained even during cooling in period 3, and a thermal load is applied. Here, a _{Δ H-C ≧ Δ i>} Δ H. Furthermore, by repeating the heat cycle, the amplitude of the displacement increases and the warpage of the substrate C increases.

  In the repetition of the heat cycle for the substrate C, since the substrate C is cooled, several small AEs are generated within a period in which the substrate C is rapidly displaced with a small displacement amount. As in B, it can be seen that A-mode destruction occurred in the substrate C.

  When the destruction determination by the destruction determination unit 53 is completed, the H / C test for the substrate 3 is completed.

  In addition, the process of step S3 to S5 is automated by the control part 50, ie, program control. By detecting the AE generated from the substrate 3 as described above, the generation timing of the destruction of the substrate 3 in the H / C test is specified, and the destruction mechanism of the substrate 3 is specified by combining with the detection of the displacement of the substrate 3. Can do.

  In the chamber 9, an exchange device for exchanging the substrate 3 placed on the stage 21 and performing the H / C test from a plurality of substrates may be provided. Thereby, it is possible to continuously perform the H / C test on a plurality of substrates while maintaining the airtightness in the chamber 9.

  FIG. 6 shows the procedure of the manufacturing method of the semiconductor device 1 using the H / C test. In step S11, one or a plurality of substrates 3 are prepared as test objects. In step S12, an H / C test is performed on the substrates 3 to select the substrates 3 that satisfy the standard. In step S13, a semiconductor device is assembled by a known method using the substrate 3 selected in step S12.

  FIG. 7 shows a schematic configuration of the semiconductor device 1. The semiconductor device 1 includes a heat radiating plate 2 a, a case 2 b, a substrate 3, a semiconductor element 4, a terminal 5, a wire 6, and a sealing resin 7.

  The heat radiating plate 2 a is a member that is formed in a plate shape from copper, aluminum silicon carbide composite material, or the like that has high heat radiating properties, and exhausts heat generated by the semiconductor element 4.

  The case 2b is a frame that is erected on the periphery of the heat sink 2a, and constitutes a housing that houses the constituent parts of the semiconductor device 1 together with the heat sink 2a.

  The board | substrate 3 is a board | substrate which laminated | stacked the wiring board 3c, the insulating board 3a, and the metal plate 3b in order as above-mentioned. The board | substrate 3 is joined on the heat sink 2a through a solder layer.

  The semiconductor element 4 is a switching element, for example, and can employ a metal oxide semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), or the like. As an example, the semiconductor element 4 is a vertical element having electrodes on the front surface and the back surface. The semiconductor element 4 is bonded onto the wiring board 3c of the substrate 3 via a solder layer.

  The terminal 5 is an input / output terminal for inputting an external signal to the semiconductor element 4 or inputting / outputting a current from the semiconductor element 4 to the outside. The terminal 5 is formed into a columnar shape or a flat plate shape, for example, using a conductive metal such as copper or aluminum and having a lower end bent into a bowl shape. Two terminals 5 are fixed in contact with the inner surfaces of one side and the other side of the case 2b, respectively.

  The wire 6 is a wire-like member that connects the electrode of the semiconductor element 4 to the terminal 5 or the wiring board 3c. The wire 6 is formed using, for example, a conductive metal such as copper or aluminum or a conductive alloy such as iron aluminum alloy. One wire 6 connects the front surface electrode (for example, gate electrode) of the semiconductor element 4 and the lower end of the terminal 5 on the right side of the drawing. Another wire 6 connects the surface electrode (for example, source electrode or emitter electrode) of the semiconductor element 4 and the wiring board 3c (pattern on the right side of the drawing). Still another wire 6 connects the wiring board 3 c and the lower end of the terminal 5 on the left side of the drawing, and connects the back electrode (for example, drain electrode or collector electrode) of the semiconductor element 4 to the terminal 5.

  The sealing resin 7 is a member for sealing the constituent parts of the semiconductor device 1, and an epoxy resin can be used as an example. The sealing resin 7 is filled in the case 2b (on the heat dissipation plate 2a) after the substrate 3, the semiconductor element 4, the terminal 5, and the wire 6 are provided. Further, the cover may be placed on the side portion of the case 2b.

  Various embodiments of the invention may be described with reference to flowcharts and block diagrams, where a block is either (1) a stage in a process in which the operation is performed or (2) an apparatus responsible for performing the operation. May represent a section of Certain stages and sections are implemented by dedicated circuitry, programmable circuitry supplied with computer readable instructions stored on a computer readable medium, and / or processor supplied with computer readable instructions stored on a computer readable medium. It's okay. Dedicated circuitry may include digital and / or analog hardware circuitry and may include integrated circuits (ICs) and / or discrete circuits. Programmable circuits include memory elements such as logical AND, logical OR, logical XOR, logical NAND, logical NOR, and other logical operations, flip-flops, registers, field programmable gate arrays (FPGA), programmable logic arrays (PLA), etc. Reconfigurable hardware circuitry, including and the like.

  Computer readable media may include any tangible device capable of storing instructions to be executed by a suitable device, such that a computer readable medium having instructions stored thereon is specified in a flowchart or block diagram. A product including instructions that can be executed to create a means for performing the operation. Examples of computer readable media may include electronic storage media, magnetic storage media, optical storage media, electromagnetic storage media, semiconductor storage media, and the like. More specific examples of computer readable media include floppy disks, diskettes, hard disks, random access memory (RAM), read only memory (ROM), erasable programmable read only memory (EPROM or flash memory), Electrically erasable programmable read only memory (EEPROM), static random access memory (SRAM), compact disc read only memory (CD-ROM), digital versatile disc (DVD), Blu-ray (RTM) disc, memory stick, integrated A circuit card or the like may be included.

  Computer readable instructions can be assembler instructions, instruction set architecture (ISA) instructions, machine instructions, machine dependent instructions, microcode, firmware instructions, state setting data, or object oriented programming such as Smalltalk, JAVA, C ++, etc. Including any source code or object code written in any combination of one or more programming languages, including languages and conventional procedural programming languages such as "C" programming language or similar programming languages Good.

  Computer readable instructions may be directed to a general purpose computer, special purpose computer, or other programmable data processing device processor or programmable circuit locally or in a wide area network (WAN) such as a local area network (LAN), the Internet, etc. The computer-readable instructions may be executed to create a means for performing the operations provided via and specified in the flowchart or block diagram. Examples of processors include computer processors, processing units, microprocessors, digital signal processors, controllers, microcontrollers, and the like.

  FIG. 8 illustrates an example of a computer 2200 in which aspects of the present invention may be embodied in whole or in part. The program installed in the computer 2200 can cause the computer 2200 to function as an operation associated with the apparatus according to the embodiment of the present invention or one or more sections of the apparatus, or to perform the operation or the one or more sections. The section can be executed and / or the computer 2200 can execute a process according to an embodiment of the present invention or a stage of the process. Such a program may be executed by CPU 2212 to cause computer 2200 to perform certain operations associated with some or all of the blocks in the flowcharts and block diagrams described herein.

  A computer 2200 according to this embodiment includes a CPU 2212, a RAM 2214, a graphic controller 2216, and a display device 2218, which are connected to each other by a host controller 2210. Computer 2200 also includes input / output units such as communication interface 2222, hard disk drive 2224, DVD-ROM drive 2226, and IC card drive, which are connected to host controller 2210 via input / output controller 2220. Yes. The computer also includes legacy input / output units, such as ROM 2230 and keyboard 2242, which are connected to input / output controller 2220 via input / output chip 2240.

  The CPU 2212 operates according to programs stored in the ROM 2230 and the RAM 2214, thereby controlling each unit. The graphic controller 2216 obtains the image data generated by the CPU 2212 in a frame buffer or the like provided in the RAM 2214 or itself so that the image data is displayed on the display device 2218.

  The communication interface 2222 communicates with other electronic devices via a network. The hard disk drive 2224 stores programs and data used by the CPU 2212 in the computer 2200. The DVD-ROM drive 2226 reads a program or data from the DVD-ROM 2201 and provides the program or data to the hard disk drive 2224 via the RAM 2214. The IC card drive reads programs and data from the IC card and / or writes programs and data to the IC card.

  The ROM 2230 stores therein a boot program executed by the computer 2200 at the time of activation and / or a program depending on the hardware of the computer 2200. The input / output chip 2240 may also connect various input / output units to the input / output controller 2220 via parallel ports, serial ports, keyboard ports, mouse ports, and the like.

  The program is provided by a computer-readable medium such as a DVD-ROM 2201 or an IC card. The program is read from a computer-readable medium, installed in the hard disk drive 2224, the RAM 2214, or the ROM 2230, which are also examples of the computer-readable medium, and executed by the CPU 2212. Information processing described in these programs is read by the computer 2200 to bring about cooperation between the programs and the various types of hardware resources. An apparatus or method may be configured by implementing information manipulation or processing in accordance with the use of computer 2200.

  For example, when communication is performed between the computer 2200 and an external device, the CPU 2212 executes a communication program loaded in the RAM 2214 and performs communication processing on the communication interface 2222 based on processing described in the communication program. You may order. The communication interface 2222 reads the transmission data stored in the transmission buffer processing area provided in the recording medium such as the RAM 2214, the hard disk drive 2224, the DVD-ROM 2201, or the IC card under the control of the CPU 2212, and the read transmission. Data is transmitted to the network, or received data received from the network is written in a reception buffer processing area provided on the recording medium.

  Further, the CPU 2212 allows the RAM 2214 to read all or a necessary part of a file or database stored in an external recording medium such as a hard disk drive 2224, a DVD-ROM drive 2226 (DVD-ROM 2201), an IC card, etc. Various types of processing may be performed on the data on the RAM 2214. Next, the CPU 2212 writes back the processed data to the external recording medium.

  Various types of information, such as various types of programs, data, tables, and databases, may be stored on a recording medium and subjected to information processing. The CPU 2212 describes various types of operations, information processing, conditional judgment, conditional branching, unconditional branching, information retrieval, which are described in various places in the present disclosure and specified by the instruction sequence of the program with respect to the data read from the RAM 2214. Various types of processing may be performed, including / replacement etc., and the result is written back to the RAM 2214. Further, the CPU 2212 may search for information in files, databases, etc. in the recording medium. For example, when a plurality of entries each having an attribute value of the first attribute associated with the attribute value of the second attribute are stored in the recording medium, the CPU 2212 specifies the attribute value of the first attribute. The entry that matches the condition is searched from the plurality of entries, the attribute value of the second attribute stored in the entry is read, and thereby the first attribute that satisfies the predetermined condition is associated. The attribute value of the obtained second attribute may be acquired.

  The programs or software modules described above may be stored on a computer readable medium on or near computer 2200. In addition, a recording medium such as a hard disk or a RAM provided in a server system connected to a dedicated communication network or the Internet can be used as a computer-readable medium, thereby providing a program to the computer 2200 via the network. To do.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

  The order of execution of each process such as operations, procedures, steps, and stages in the apparatus, system, program, and method shown in the claims, the description, and the drawings is particularly “before” or “prior to”. It should be noted that the output can be realized in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the description, and the drawings, even if it is described using “first”, “next”, etc. for convenience, it means that it is essential to carry out in this order. It is not a thing.

  B ... Base, 1 ... Semiconductor device, 2a ... Heat sink, 2b ... Case, 3 ... Substrate, 3a ... Insulating plate, 3b ... Metal plate, 3c ... Wiring board, 3d ... Measurement position, 4 ... Semiconductor element, 5 ... Terminal , 6 ... wire, 7 ... sealing resin, 8 ... gas sensor, 9 ... chamber, 10 ... frame, 11 ... pole, 12 ... top plate, 13 ... middle plate, 13a ... through hole, 14 ... support part, 14a ... support Member 14b ... Expandable member 15 ... Support member 16 ... Imaging device 20 ... Stage system 21 ... Stage 21a ... Heat stage 21b ... Water-cooled cooling plate 22 ... Temperature sensor 23 ... Stage drive unit 24 ... Heating unit 25 ... cooling unit 25a ... piping 30 ... detecting unit 31 ... acoustic emission sensor (AE sensor) 31a ... gripping member 32 ... waveguide body 33 ... displacement sensor 50 ... control unit 51 ... Recording section 52 ... Command unit, 53 ... Destruction determination unit, 59 ... Input / output unit, 100 ... Thermal cycle test device, 2200 ... Computer, 2201 ... ROM, 2210 ... Host controller, 2212 ... CPU, 2214 ... RAM, 2216 ... Graphic controller, 2218 ... Display device, 2220 ... Output controller, 2222 ... Communication interface, 2224 ... Hard disk drive, 2226 ... ROM drive, 2230 ... ROM, 2240 ... Output chip, 2242 ... Keyboard.

Claims (33)

An AE detector that detects acoustic emission of a test object in which a plurality of materials having different coefficients of thermal expansion are joined;
A displacement detector for detecting the displacement of the test object;
A thermal cycle test apparatus comprising: an acoustic emission detected by the AE detection unit; and a recording unit that records a set of displacements detected by the displacement detection unit.   The thermal cycle test apparatus according to claim 1, further comprising a stage for placing the test object and controlling a temperature of the test object.   The thermal cycle test apparatus according to claim 2, wherein the stage can repeatedly heat and cool the test object at a predetermined cycle T (seconds).   The thermal cycle test apparatus according to claim 2, further comprising a waveguide body that contacts the test object during a thermal cycle test and propagates acoustic emission to the AE detection unit.   The thermal cycle testing apparatus according to claim 4, wherein an area of a contact surface that contacts the test object is smaller than an area of a contact surface that contacts the AE detector.   The thermal cycle test apparatus according to claim 5, wherein the waveguide has a truncated cone shape or a truncated pyramid shape.   The thermal cycle testing apparatus according to any one of claims 4 to 6, wherein the waveguide is made of ceramic.   The thermal cycle test apparatus according to claim 4, wherein the displacement detection unit detects a displacement of the test object via the waveguide. In the waveguide, the first end surface on the test object side is pressed against the test object,
The AE detector is fixed in contact with a second end surface of the waveguide opposite to the first end surface;
The thermal cycle test apparatus according to claim 8, wherein the displacement detection unit detects relative movement of a set of the waveguide and the AE detection unit with respect to the displacement detection unit. A support unit for hanging and supporting the waveguide and the AE detection unit;
The thermal cycle test apparatus according to claim 9, wherein the displacement detection unit detects vertical movement of the waveguide body and the AE detection unit.   The thermal cycle test apparatus according to claim 10, wherein the support section suspends the waveguide body and the AE detection section by an elastic member.   The thermal cycle test apparatus according to claim 11, wherein the support portion supports the position of the upper end of the elastic member so as to be adjustable in the vertical direction. The displacement detector has a differential transformer,
The thermal cycle test apparatus according to any one of claims 8 to 12, wherein the AE detection unit is fixed to a movable magnetic core of the differential transformer.   14. The displacement detection unit according to claim 2, wherein the displacement detection unit calculates a displacement of the test object itself by subtracting a reference displacement of the stage from a measured displacement measured at a measurement position of the test object. The thermal cycle test apparatus described.   The displacement detection unit subtracts the reference displacement measured at a portion where the test object is not placed on the stage during a calibration cycle different from the thermal cycle test of the test object, from the measured displacement, The thermal cycle test apparatus according to claim 14, wherein the displacement of the test object itself is calculated. The displacement detector is
A first displacement measurement unit that measures the measurement displacement in contact with the measurement position of the test object during a thermal cycle test of the test object;
The thermal cycle test apparatus according to claim 14, further comprising: a second displacement measurement unit that measures the reference displacement in contact with the stage during the thermal cycle test. The displacement detector is
The displacement of the test object itself is calculated by subtracting the first reference displacement measured while increasing the temperature of the stage from the measured displacement measured while increasing the temperature of the test object. And
The displacement of the test object itself is calculated by subtracting the second reference displacement measured while lowering the temperature of the stage from the measured displacement measured while lowering the temperature of the test object. The thermal cycle test apparatus according to any one of claims 14 to 16. The stage is
A heat stage for placing the test object in a heatable manner;
18. A cooling unit provided on a surface opposite to a surface on which the test object is placed in the heat stage, and a cooling unit that cools the heat stage. 18. The thermal cycle test apparatus described in 1.   The thermal cycle test apparatus according to claim 18, wherein the cooling unit supplies a cooling liquid to the cooling member to cool the heat stage.   The thermal cycle test apparatus according to claim 18, wherein the cooling unit supplies a cooling liquid to the cooling member even while the test object is heated by the heat stage.   The thermal cycle test apparatus according to any one of claims 1 to 20, further comprising a chamber that covers the test object and at least a member in contact with the test object in the thermal cycle test apparatus.   The thermal cycle test apparatus according to claim 21, further comprising a gas sensor provided outside the chamber and configured to detect that a gas filled in the chamber has leaked to the outside of the chamber.   The thermal cycle test according to any one of claims 1 to 22, wherein the recording unit records time series data of acoustic emission detected by the AE detection unit and time series data of displacement detected by the displacement detection unit. apparatus.   The thermal cycle test apparatus according to claim 23, wherein the recording unit further records time-series data of the temperature applied to the test object.   The destruction determination part which determines with the said test target object having been destroyed according to the acoustic emission of the said test target object detected during the heat cycle test having exceeded the threshold value is provided. The thermal cycle test apparatus described in 1.   26. The thermal cycle test according to claim 25, wherein the fracture determination unit further determines the type of fracture that has occurred in the test object based on the acoustic emission and displacement of the test object detected during the thermal cycle test. apparatus.   26. The destruction determination unit further determines, based on an acoustic emission frequency component of the test object, which part of the plurality of materials in the test object is broken. Or the thermal cycle test apparatus of 26.   The thermal recording test apparatus according to any one of claims 1 to 27, wherein the recording unit further records a moving image obtained by imaging the test object during a thermal cycling test. During a thermal cycle test of a test object in which a plurality of materials having different coefficients of thermal expansion are joined, the acoustic emission of the test object is detected,
Detecting the displacement of the test object during the thermal cycle test;
Thermal cycle test method that records the set of detected acoustic emissions and detected displacement.   30. The thermal cycle test method according to claim 29, wherein the test object is executed while being repeatedly heated and cooled at a predetermined period T (seconds). The test object is a substrate in which a metal plate, an insulating plate and a wiring board are laminated in order,
31. The thermal cycle test method according to claim 30, wherein the thermal cycle test method is performed while applying a thermal load to the substrate by flattening the substrate by the heating and then warping the substrate during temperature rising. Preparing a substrate;
Testing the substrate by the thermal cycle test method of claim 31;
Assembling a semiconductor device using the substrate selected in the testing step;
A method for manufacturing a semiconductor device comprising: During a thermal cycle test of a test object in which a plurality of materials having different coefficients of thermal expansion are joined to a computer, the acoustic emission of the test object is detected,
During the thermal cycle test, the displacement of the test object is detected,
A program that records the set of detected acoustic emissions and detected displacement.

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