JP2019045229A - Method for manufacturing physical quantity sensor, physical quantity sensor, inertial measurement unit, portable electronic equipment, electronic equipment, and mobile body - Google Patents

Abstract

To provide a method for manufacturing a physical quantity sensor with excellent mass productivity and high detection sensitivity, the physical quantity sensor, an inertial measurement unit, portable electronic equipment, electronic equipment, and a mobile body.SOLUTION: A method for manufacturing a physical quantity sensor 1 includes the steps of: joining a sensor substrate 103 to a base substrate 102; forming a groove 60 by patterning the sensor substrate 103; and forming a deposition film 70 on at least a side surface of the groove 60 using a vapor phase epitaxial method.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a method of manufacturing a physical quantity sensor, a physical quantity sensor, an inertial measurement unit, a portable electronic device, an electronic device, and a moving body.

Conventionally, as a physical quantity sensor for detecting a physical quantity such as acceleration or angular velocity, one having a structure having a fixed electrode and a movable electrode which is provided side by side with a gap to the fixed electrode and which can be displaced in a predetermined direction is known. There is.
In such a physical quantity sensor, the gap between the fixed electrode and the movable electrode provided on the movable weight changes with the displacement of the movable weight, and the electrostatic generated between the fixed electrode and the movable electrode due to the change in the gap By detecting a change in capacitance, a change in physical quantity such as acceleration or angular velocity is detected.

  In the case of forming a sensor element composed of a fixed electrode, a movable electrode, a movable weight and the like, the etching processing technique (referred to as Bosch process) shown in Patent Document 1 is used. This is a kind of deep etching, and it is possible to form a groove with a large aspect ratio while protecting the side while repeating passivation mode and etching mode, and the distance between the fixed electrode and the movable electrode is narrow and fixed. It is possible to form a sensor element with a wide opposing area between the electrode and the movable electrode. Therefore, a physical quantity sensor with high detection sensitivity can be obtained.

Japanese Patent Publication No. 7-503815

  However, in the etching processing technique (manufacturing method) described in Patent Document 1, when forming the groove and forming the fixed electrode and the movable electrode, the side surface of the groove is side-etched, and the groove is wider than the mask opening width. The problem is that the distance between the fixed electrode and the movable electrode becomes wider than the desired distance, and the detection sensitivity decreases.

  The present invention has been made to solve at least a part of the above-described problems, and can be realized as the following modes or application examples.

  Application Example 1 In a method of manufacturing a physical quantity sensor according to this application example, a step of bonding a sensor substrate to a base substrate, a step of forming a groove by patterning the sensor substrate, and a vapor phase growth method are used. Forming a deposited film on at least the side surface of the groove.

  According to this application example, by bonding the sensor substrate to the base substrate, the thickness of the substrate is thicker than in the case of the single sensor substrate, and the strength of the substrate can be increased. Therefore, when the sensor substrate is patterned to form a groove, breakage of the sensor substrate can be reduced, and the groove can be easily formed. In addition, after forming the groove, the width of the groove can be narrowed by forming a deposited film on the side surface of the groove using a vapor deposition method. Therefore, the capacitance value generated between the grooves can be increased, the detection sensitivity of the physical quantity sensor can be improved, and the physical quantity sensor having high detection sensitivity can be manufactured.

  Application Example 2 In the method of manufacturing a physical quantity sensor according to the application example, the deposited film is preferably a semiconductor thin film.

  According to this application example, since the deposited film is a semiconductor thin film, capacitance can be generated between the grooves.

  Application Example 3 In the method of manufacturing a physical quantity sensor according to the application example, the semiconductor thin film is preferably any one of a silicon thin film, a germanium thin film, and a silicon germanium thin film.

  According to this application example, since the semiconductor thin film forming the deposited film is any of a silicon thin film, a germanium thin film, and a silicon germanium thin film, it can be easily formed by a vapor deposition method.

  Application Example 4 In the method of manufacturing a physical quantity sensor described in the application example, the groove is preferably a through groove.

  According to this application example, since the groove is a through groove, capacitance can be generated between the grooves.

  Application Example 5 In the method of manufacturing a physical quantity sensor according to the application example, L1> L2 is satisfied where L1 is a width of the groove and L2 is a distance between the surfaces where the deposited films face each other. Is preferred.

  According to this application example, since the distance L2 between the surfaces on which the deposited film is formed is smaller than the width L1 of the groove, the distance at which the deposited film is formed is greater than the width at which the deposited film is formed. The capacitance value to be generated can be increased, and the detection sensitivity of the physical quantity sensor can be improved.

  Application Example 6 In the method of manufacturing a physical quantity sensor according to the application example, the vapor phase growth method is preferably a selective epitaxial growth method.

  According to this application example, since the chemical vapor deposition method is the selective epitaxial growth method, the deposited film can be selectively formed only on the surface or the side surface of the structure formed from the trench.

  Application Example 7 In the method of manufacturing a physical quantity sensor according to the application example described above, in the step of forming the deposited film, the processing temperature is preferably 500 ° C. or more and 600 ° C. or less.

  According to this application example, since the processing temperature for forming the deposited film is 500 ° C. or more and 600 ° C. or less, the adhesion between the surface of the groove and the deposited film can be improved, and a highly reliable physical quantity sensor is manufactured. can do.

  Application Example 8 In the method of manufacturing a physical quantity sensor according to the application example, the groove in which the deposited film is formed is any of an acceleration sensor element, an angular velocity sensor element, and a composite element of an acceleration sensor element and an angular velocity sensor element. It is preferable that the

  According to this application example, since the groove in which the deposited film is formed constitutes any one of an acceleration sensor element, an angular velocity sensor element, and a composite element of an acceleration sensor element and an angular velocity sensor element, acceleration with high detection sensitivity A sensor, an angular velocity sensor, or a combined element of an acceleration sensor element and an angular velocity sensor element can be manufactured.

  Application Example 9 In the method of manufacturing a physical quantity sensor according to the application example, the base substrate is preferably amorphous, and the sensor substrate is a silicon substrate.

  According to this application example, since the base substrate is amorphous and the sensor substrate is a silicon substrate, the anodic bonding method can be used in the bonding step between the base substrate and the sensor substrate. Since no members are required, the height can be reduced and no gas is generated by heat. Therefore, a physical quantity sensor with high reliability can be manufactured.

  Application Example 10 A physical quantity sensor according to this application example includes a base substrate and a sensor element disposed on the base substrate and including a fixed electrode and a movable electrode, wherein the fixed electrode and the movable electrode are mutually different. A deposited film is formed on each of the adjacent surfaces.

  According to this application example, since the deposited film is formed on the respective surfaces where the fixed electrode and the movable electrode are adjacent to each other, the distance between the fixed electrode and the movable electrode can be narrowed. The capacitance value generated between the movable electrode and the movable electrode can be increased. Therefore, a physical quantity sensor having high detection sensitivity can be obtained.

  Application Example 11 In the physical quantity sensor described in the application example, the deposited film is preferably a semiconductor thin film.

  According to this application example, since the deposited film is a semiconductor thin film, capacitance can be generated between the fixed electrode and the movable electrode.

  Application Example 12 In the physical quantity sensor described in the application example, the semiconductor thin film is preferably any one of a silicon thin film, a germanium thin film, and a silicon germanium thin film.

  According to this application example, since the semiconductor thin film forming the deposited film is any of a silicon thin film, a germanium thin film, and a silicon germanium thin film, it can be easily formed by a vapor deposition method.

  Application Example 13 In the physical quantity sensor described in the application example, the distance between the surfaces adjacent to each other is L1, and the deposited films formed on the surfaces face each other. It is preferable that L1> L2 is satisfied, where L2 is the distance between the two faces.

  According to this application example, since the distance L2 between the fixed electrode on which the deposited film is formed and the movable electrode is smaller than the distance L1 between the fixed electrode on which the deposited film is not formed and the movable electrode, the deposited film is not formed. The capacitance value generated between the fixed electrode on which the deposited film is formed and the movable electrode can be increased by the capacitance value generated between the fixed electrode and the movable electrode. Therefore, a physical quantity sensor having high detection sensitivity can be obtained.

  Application Example 14 In the physical quantity sensor described in the application example, it is preferable that the sensor element is any one of an acceleration sensor element, an angular velocity sensor element, and a composite element of an acceleration sensor element and an angular velocity sensor element.

  According to this application example, the deposition film is formed on the fixed electrode and the movable electrode of any of the acceleration sensor element, the angular velocity sensor element, and the composite element of the acceleration sensor element and the angular velocity sensor element. Either a high acceleration sensor, an angular velocity sensor, or a combined sensor of an acceleration sensor and an angular velocity sensor can be obtained.

  Application Example 15 An inertial measurement unit according to this application example is characterized by including the physical quantity sensor described in the application example and a control unit that controls the physical quantity sensor.

  According to this application example, by using the physical quantity sensor having high detection sensitivity for the inertial measurement unit, it is possible to provide the inertial measurement unit with higher performance.

  Application Example 16 The portable electronic device according to this application example includes the physical quantity sensor described in the application example, a case containing the physical quantity sensor, and the case accommodated in the case, and the output data from the physical quantity sensor And a display unit accommodated in the case, and a translucent cover closing the opening of the case.

  According to this application example, by using the physical quantity sensor having high detection sensitivity for the portable electronic device, it is possible to provide a higher-performance portable electronic device.

  Application Example 17 The electronic device according to this application example includes: the physical quantity sensor according to the application example described above; and a control unit that performs control based on a detection signal output from the physical quantity sensor. It features.

  According to this application example, by using the physical quantity sensor having high detection sensitivity for the electronic device, it is possible to provide the electronic device with higher performance.

  Application Example 18 The mobile object according to this application example includes the physical quantity sensor according to the application example, and a control unit that performs control based on the detection signal output from the physical quantity sensor. It features.

  According to this application example, it is possible to provide a mobile body with higher performance by utilizing a physical quantity sensor having high detection sensitivity for the mobile body.

FIG. 1 is a schematic plan view showing a schematic structure of a physical quantity sensor according to an embodiment of the present invention. The schematic cross section of the AA in FIG. The schematic cross section of the BB line in FIG. The model perspective view of the cross section of the CC line in FIG. The flowchart which shows the main manufacturing processes of the physical quantity sensor which concerns on embodiment of this invention. FIG. 5 is a schematic cross-sectional view illustrating the manufacturing process of the physical quantity sensor according to the embodiment of the present invention. FIG. 5 is a schematic cross-sectional view illustrating the manufacturing process of the physical quantity sensor according to the embodiment of the present invention. FIG. 5 is a schematic cross-sectional view illustrating the manufacturing process of the physical quantity sensor according to the embodiment of the present invention. FIG. 5 is a schematic cross-sectional view illustrating the manufacturing process of the physical quantity sensor according to the embodiment of the present invention. FIG. 5 is a schematic cross-sectional view illustrating the manufacturing process of the physical quantity sensor according to the embodiment of the present invention. The schematic cross section explaining the sensor element formation process concerning the embodiment of the present invention. The schematic cross section explaining the sensor element formation process concerning the embodiment of the present invention. The schematic cross section explaining the sensor element formation process concerning the embodiment of the present invention. The schematic cross section explaining the sensor element formation process concerning the embodiment of the present invention. The schematic plan view which shows schematic structure of the physical quantity sensor which concerns on the modification of embodiment of this invention. The schematic cross section of the DD line in FIG. FIG. 1 is an exploded perspective view showing a schematic configuration of an inertial measurement unit according to an embodiment of the present invention. The perspective view which shows the example of arrangement | positioning of the inertial sensor element of the inertial measurement unit which concerns on embodiment of this invention. FIG. 1 is a plan view schematically showing a configuration of a portable electronic device according to an embodiment of the present invention. FIG. 1 is a functional block diagram showing a schematic configuration of a portable electronic device according to an embodiment of the present invention. FIG. 1 is a functional block diagram of an electronic device according to an embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS The model top view which shows the external appearance of the smart phone which is an example of the electronic device which concerns on embodiment of this invention. BRIEF DESCRIPTION OF THE DRAWINGS The model perspective view which shows the external appearance of the wearable apparatus which is an example of the electronic device which concerns on embodiment of this invention. FIG. 1 is a plan view schematically showing a mobile unit according to an embodiment of the present invention.

  Hereinafter, embodiments of the present invention will be described in detail based on the drawings. In each of the drawings shown below, in order to make each component have a size that can be recognized in the drawings, the dimensions and ratios of each component may be appropriately different from the actual components and described. is there.

Embodiment
[Structure of physical quantity sensor]
First, the physical quantity sensor 1 according to the present embodiment will be described with reference to FIGS. 1 to 4 by taking an acceleration sensor for detecting a physical quantity such as acceleration as an example.
1 is a schematic plan view showing a schematic configuration of a physical quantity sensor, FIG. 2 is a schematic cross-sectional view taken along the line AA of FIG. 1, and FIG. 3 is a schematic view taken along the line BB of FIG. FIG. 4 is a cross-sectional view, and FIG. 4 is a schematic perspective view of a cross section taken along line C-C in FIG. In addition, in FIG. 1, the cover member 5 is described by the broken line.

  In FIGS. 1 to 4, for convenience of explanation, the X axis, the Y axis, and the Z axis are illustrated as three axes orthogonal to each other, and the distal end side of the illustrated arrow is “+ side”, the proximal end. The side is "-side". Also, in the following, a direction parallel to the X axis is referred to as “X axis direction”, a direction parallel to the Y axis is referred to as “Y axis direction”, and a direction parallel to the Z axis is referred to as “Z axis direction”. Furthermore, for convenience of explanation, in plan view when viewed from the Z-axis direction, the surface in the Z-axis direction is the main surface, the + Z-axis side is the upper surface, and the -Z-axis side is the lower surface.

  As shown in FIGS. 1 to 3, the physical quantity sensor 1 includes a support substrate 2, a sensor element 3 which is an acceleration sensor element supported by the support substrate 2, and a lid member 5 provided to cover the sensor element 3. And have.

The support substrate 2 has a function of supporting the sensor element 3. The support substrate 2 has a plate shape, and a recess 21 is provided on the upper surface (one main surface) on which the sensor element 3 and the lid member 5 are disposed. The recess 21 is formed so that the movable portion 33, the movable electrode portions 36 and 37, and the connecting portions 34 and 35 of the sensor element 3 described later can be accommodated when the support substrate 2 is viewed in plan.
The recess 21 constitutes a relief that prevents the movable portion 33 of the sensor element 3, the movable electrode portions 36 and 37, and the connecting portions 34 and 35 from coming into contact with the support substrate 2. Thereby, the support substrate 2 can allow the displacement of the movable portion 33 of the sensor element 3.
The relief portion may be a through hole that penetrates the support substrate 2 in the thickness direction, instead of the recess 21. Moreover, in this embodiment, although the planar view shape of the recessed part 21 is making the quadrangle (specifically rectangle), it is not limited to this.

  Further, grooves 22, 23, 24 are provided on the upper surface of the support substrate 2 outside the above-described recess 21 and along the outer periphery thereof. The grooves 22, 23, 24 have a shape corresponding to the wiring in a plan view. Specifically, the groove 22 has a shape corresponding to a wiring 41 and an electrode 44 described later, the groove 23 has a shape corresponding to a wiring 42 and an electrode 45 described later, and the groove 24 has a wiring 43 and a later described A shape corresponding to the electrode 46 is formed.

Here, the depth dimensions (length in the Z-axis direction) of the groove portions 22, 23 and 24 are respectively larger than the thickness dimensions (length in the Z-axis direction) of the wires 41, 42 and 43.
In addition, the depth dimension (length in the Z-axis direction) of the portion where the electrodes 44, 45 and 46 of the groove portions 22, 23 and 24 are provided is deeper than the portion where the wires 41, 42 and 43 are provided. ing.
As described above, by increasing the depth of part of the grooves 22, 23, 24, when manufacturing the physical quantity sensor 1 described later, the electrodes 44, 45, 46 and the sensor substrate 103 to be the sensor element 3 later (see FIG. 6A) can be avoided.

Specifically, as a constituent material of the support substrate 2, it is preferable to use an insulating amorphous, high-resistance silicon material or glass material, and in particular, it is formed from the sensor substrate 103 (see FIG. 6A) When the sensor element 3 is composed of a silicon substrate whose main material is a silicon material, it is preferable to use a glass material (for example, borosilicate glass) containing alkali metal ions (mobile ions).
Thus, the physical quantity sensor 1 can perform anodic bonding of the support substrate 2 (glass substrate) and the sensor element 3 (silicon substrate).

  In addition, it is preferable that the constituent material of the support substrate 2 has the smallest difference in thermal expansion coefficient with the constituent material of the sensor element 3. Specifically, the heat of the constituent material of the support substrate 2 and the constituent material of the sensor element 3 The expansion coefficient difference is preferably 3 ppm / ° C. or less. Thereby, the physical quantity sensor 1 reduces residual stress (thermal stress) between the support substrate 2 and the sensor element 3 even when exposed to high temperature when bonding the support substrate 2 and the sensor element 3 or the like. be able to.

The sensor element 3 includes fixed portions 31 and 32, a movable portion 33, connection portions 34 and 35, movable electrode portions 36 and 37, and fixed electrode portions 38 and 39.
In the sensor element 3, for example, the movable portion 33 and the movable electrode portions 36 and 37 elastically deform the connecting portions 34 and 35 in response to a change in acceleration, and the X axis direction (+ X axis direction or -X axis direction) Displace. In the physical quantity sensor 1, the size of the gap between the movable electrode portion 36 and the fixed electrode portion 38 and the size of the gap between the movable electrode portion 37 and the fixed electrode portion 39 change with such displacement. .
That is, in the physical quantity sensor 1, the capacitance between the movable electrode portion 36 and the fixed electrode portion 38 and the capacitance between the movable electrode portion 37 and the fixed electrode portion 39 are associated with such displacement. Each size changes. Therefore, the physical quantity sensor 1 can detect acceleration based on these capacitances.

The fixed portions 31 and 32, the movable portion 33, the coupling portions 34 and 35, and the movable electrode portions 36 and 37 are integrally formed of, for example, a single silicon substrate.
The fixing portions 31 and 32 are respectively joined to the upper surface of the support substrate 2 described above. Specifically, the fixing portion 31 is joined to the portion on the side (-X axis direction side) where the electrode 46 is disposed with respect to the recess 21 on the upper surface of the support substrate 2, and the fixing portion 32 is It is joined to the part by which the electrode 46 is not arrange | positioned (+ X axial direction side) oppositely. The fixing portions 31 and 32 are provided so as to straddle the recess 21 and the outer peripheral edge of the recess 21 when viewed in plan.

The positions and shapes of the fixing portions 31 and 32 are determined according to the positions and shapes of the connecting portions 34 and 35 and the wires 41, 42 and 43, and are not limited to the above-described configuration.
A movable portion 33 is provided between the two fixed portions 31 and 32. In the present embodiment, the movable portion 33 has a longitudinal shape extending in the X-axis direction. The shape of the movable portion 33 is determined in accordance with the shape, size, and the like of each portion constituting the sensor element 3 and is not limited to the above-described configuration.

The movable portion 33 is connected to the fixed portion 31 via the connecting portion 34, and is connected to the fixed portion 32 via the connecting portion 35. More specifically, the end of the movable portion 33 on the side where the electrode 46 is arranged (−X axis direction side) is connected to the fixed portion 31 via the connection portion 34, and the electrode 46 of the movable portion 33 is The end on the non-arranged side (the + X axis direction side) is connected to the fixed portion 32 via the connecting portion 35.
The connecting portions 34 and 35 displaceably connect the movable portion 33 to the fixed portions 31 and 32. In the present embodiment, the connecting portions 34 and 35 are configured to be capable of displacing the movable portion 33 in the X axis direction (the + X axis direction or the −X axis direction) as shown by the arrow a in FIG. .

Specifically, the connecting portion 34 is composed of two beams 341 and 342. The beams 341 and 342 have shapes extending in the X axis direction while meandering in the Y axis direction. In other words, each of the beams 341 and 342 has a shape that is folded back a plurality of times (three times in the present embodiment) in the Y-axis direction. The number of turns of each beam 341, 342 may be once or twice, or four or more.
Similarly, the connecting portion 35 is configured by two beams 351 and 352 having a shape extending in the X axis direction while meandering in the Y axis direction.

As described above, the movable electrode portion 36 is provided on one side (+ Y axis direction side) in the width direction (Y axis direction) of the movable portion 33 supported so as to be displaceable in the X axis direction with respect to the support substrate 2. The movable electrode portion 37 is provided on the other side (−Y axis direction side).
The movable electrode portion 36 protrudes from the movable portion 33 in the + Y-axis direction in the direction (Y-axis direction) intersecting the direction connecting the fixed portion 31 and the fixed portion 32. A plurality of movable electrodes 361 are arranged in a comb shape. It has ~ 365. The movable electrodes 361, 362, 363, 364, and 365 are arranged in this order from the -X-axis direction side to the + X-axis direction side. Similarly, the movable electrode portion 37 protrudes from the movable portion 33 in the -Y-axis direction in the direction (Y-axis direction) intersecting the direction connecting the fixed portion 31 and the fixed portion 32 and arranged in a comb-like shape The movable electrodes 371 to 375 are provided. The movable electrodes 371, 372, 373, 374, and 375 are arranged in this order from the −X axis direction side to the + X axis direction side.

The plurality of movable electrodes 361 to 365 and the plurality of movable electrodes 371 to 375 are provided side by side in the direction of displacement of the movable portion 33 (that is, the X axis direction).
Thereby, the capacitance between the fixed electrodes 382, 384, 386, 388 and the movable electrode portion 36 of the fixed electrode portion 38 described later, and between the fixed electrodes 381, 383, 385, 387 and the movable electrode portion 36. Can be efficiently changed according to the displacement of the movable portion 33.
Similarly, the capacitance between the fixed electrodes 392, 394, 396, 398 and the movable electrode portion 37 of the fixed electrode portion 39 described later, and between the fixed electrodes 391, 393, 395, 397 and the movable electrode portion 37. Can be efficiently changed according to the displacement of the movable portion 33.
The movable electrode portion 36 is opposed to the fixed electrode portion 38 at an interval. The movable electrode portion 37 is opposed to the fixed electrode portion 39 at an interval.

  The fixed electrode portion 38 includes a plurality of fixed electrodes 381 to 388 arranged in a comb-like shape meshing with the plurality of movable electrodes 361 to 365 of the movable electrode portion 36 described above at intervals. The end portions of the fixed electrodes 381 to 388 opposite to the movable portion 33 are respectively joined to a portion on the + Y axial direction side with respect to the concave portion 21 of the upper surface of the support substrate 2. Each of the fixed electrodes 381 to 388 has the fixed end as a fixed end, and the free end extends in the −Y axis direction.

  The fixed electrodes 381 to 388 are arranged in this order from the −X axis direction side to the + X axis direction side. The fixed electrodes 381 and 382 form a pair and are provided between the movable electrodes 361 and 362 described above, and the fixed electrodes 383 and 384 form a pair and are provided between the movable electrodes 362 and 363. The pairs 385 and 386 are provided between the movable electrodes 363 and 364, and the fixed electrodes 387 and 388 are provided between the movable electrodes 364 and 365.

Here, the fixed electrodes 382, 384, 386, and 388 are respectively the first fixed electrodes, and the fixed electrodes 381, 383, 385, and 387 each have an air gap with respect to the first fixed electrode on the support substrate 2 ( A second fixed electrode disposed via a gap).
As described above, the plurality of fixed electrodes 381 to 388 are configured by the plurality of first fixed electrodes and the plurality of second fixed electrodes arranged alternately.

  The first fixed electrodes 382 384 386 388 and the second fixed electrodes 381 383 385 387 are separated from each other on the support substrate 2. Thereby, the first fixed electrodes 382, 384, 386, 388 and the second fixed electrodes 381, 383, 385, 387 can be electrically isolated. Therefore, the capacitance between the first fixed electrode 382, 384, 386, 388 and the movable electrode portion 36, and the capacitance between the second fixed electrode 381, 383, 385, 387 and the movable electrode portion 36 Can be measured separately, and acceleration can be detected with high accuracy based on the measurement results.

  Similarly, the fixed electrode portion 39 includes a plurality of fixed electrodes 391 to 398 arranged in a comb-like shape meshing with the plurality of movable electrodes 371 to 375 of the movable electrode portion 37 described above at intervals. . The ends of the fixed electrodes 391 to 398 opposite to the movable portion 33 are respectively joined to a portion on the −Y-axis direction side with respect to the recess 21 on the upper surface of the support substrate 2. Each of the fixed electrodes 391 to 398 has a fixed end thereof as a fixed end, and a free end extends in the + Y axis direction.

  The fixed electrodes 391 to 398 are arranged in this order from the −X axis direction side to the + X axis direction side. The fixed electrodes 391 and 392 form a pair and are provided between the movable electrodes 371 and 372, and the fixed electrodes 393 and 394 form a pair and are provided between the movable electrodes 372 and 373. 395 and 396 are paired and provided between the movable electrodes 373 and 374, and the fixed electrodes 397 and 398 are paired and provided between the movable electrodes 374 and 375.

Here, the fixed electrodes 392, 394, 396, and 398 are respectively the first fixed electrodes, and the fixed electrodes 391, 393, 395, and 397 each have an air gap relative to the first fixed electrode on the support substrate 2 ( A second fixed electrode disposed via a gap).
As described above, the plurality of fixed electrodes 391 to 398 are configured by the plurality of first fixed electrodes and the plurality of second fixed electrodes arranged alternately.

  The first fixed electrodes 392, 394, 396, 398 and the second fixed electrodes 391, 393, 395, 397 are separated from each other on the support substrate 2 as in the case of the fixed electrode portion 38 described above. Thereby, the capacitance between the first fixed electrodes 392, 394, 396, 398 and the movable electrode portion 37, and the static charge between the second fixed electrodes 391, 393, 395, 397 and the movable electrode portion 37. Capacitance can be measured separately, and acceleration can be detected with high accuracy based on the measurement results.

  The plurality of fixed electrodes 381 to 388 and 391 to 398 are formed by etching from the sensor substrate 103 (see FIG. 7A) described later together with the sensor element 3 including the plurality of movable electrodes 361 to 365 and 371 to 375. ing. Therefore, the distance between the fixed electrodes 381 to 388 and 391 to 398 and the movable electrodes 361 to 365 and 371 to 375 can be processed with high accuracy, and the sensitivity of the physical quantity sensor 1 can be increased.

  Further, as shown in FIG. 4, a deposited film 70 having a predetermined thickness is formed on the surfaces of the fixed electrodes 381 to 388 and 391 to 398 and the movable electrodes 361 to 365 and 371 to 375. Since the deposition film 70 is formed on the surfaces of the fixed electrode 381 and the movable electrode 361 adjacent to each other, the gap L1 between the fixed electrode 381 and the movable electrode 361 can be narrowed apparently. That is, since the distance L2 between the fixed electrode 381 on which the deposited film 70 is formed and the movable electrode 361 is narrower than the distance L1 between the fixed electrode 381 on which the deposited film 70 is not formed and the movable electrode 361, L1> L2 is satisfied. The capacitance value generated between the fixed electrode 381 on which the deposited film 70 is formed and the movable electrode 361 from the capacitance value generated between the fixed electrode 381 on which the deposited film 70 is not formed and the movable electrode 361 Can be increased. Therefore, detection sensitivity is improved, and the physical quantity sensor 1 having high detection sensitivity can be obtained.

  As a constituent material of the deposited film 70, a semiconductor thin film is preferable. Specifically, a silicon thin film, a germanium thin film, a silicon germanium thin film which is an alloy of silicon and germanium, etc. can be easily formed by a vapor phase growth method. It is preferable because it can be done.

The wires 41, 42 and 43 are provided on the upper surface on which the fixed electrode portions 38 and 39 of the support substrate 2 described above are disposed.
More specifically, the wiring 41 is provided outside the recess 21 of the support substrate 2 described above, and is formed in the groove 22 along the outer periphery of the recess 21. Then, one end portion of the wiring 41 is connected to the electrode 44 on the outer peripheral portion of the upper surface of the support substrate 2 (a portion outside the lid member 5 on the support substrate 2).

The wiring 41 is electrically connected to the fixed electrodes 382, 384, 386, 388, which are the first fixed electrodes of the sensor element 3 described above, and the fixed electrodes 392, 394, 396, 398.
Further, the wiring 42 is provided in the groove 23 along the outer peripheral edge of the inside of the wiring 41 described above and the outside of the recess 21 of the supporting substrate 2 described above. Then, one end portion of the wiring 42 is arranged on the outer peripheral portion of the upper surface of the support substrate 2 (portion outside the lid member 5 on the support substrate 2) so as to be spaced apart from the electrode 44 described above. It is connected to the.

  The wiring 43 is provided in the groove 24 so as to extend from the junction with the fixing portion 31 on the support substrate 2 to the outer peripheral portion of the upper surface of the support substrate 2 (a portion outside the lid member 5 on the support substrate 2). It is done. The end of the wiring 43 on the opposite side to the fixed part 31 side is the outer peripheral part of the upper surface of the support substrate 2 (lid member on the support substrate 2) so as to be spaced apart from the electrodes 44 and 45 described above. 5) are connected to the electrode 46).

It does not specifically limit as a constituent material of such wiring 41-43, respectively, if it has electroconductivity, Various electrode materials can be used. For example, oxides such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), In ₂ O ₃ , Sn ₂ , Sb containing SnO ₂ , Al containing ZnO (transparent electrode materials), Au, Pt, Ag, Cu, Al or alloys containing these may be mentioned, and one or more of these may be used in combination.

  As a constituent material of the wirings 41 to 43, it is preferable to use a transparent electrode material (in particular, ITO). When the wires 41 and 42 are each made of a transparent electrode material, when the support substrate 2 is a transparent substrate, foreign matter and the like present on the surface of the support substrate 2 on the fixed electrode portions 38 and 39 side can be obtained. It can be easily visually recognized from the side opposite to the fixed electrode portions 38 and 39.

  Moreover, as a constituent material of the electrodes 44 to 46, similarly to the wirings 41 to 43 described above, any conductive materials can be used without particular limitation as long as the materials have conductivity, and various electrode materials can be used. In the present embodiment, as the constituent material of the electrodes 44 to 46, the same constituent material as that of the protrusions 50, 471, 472, 481, and 482, which will be described later, is used.

Then, on the portions of the wires 41 overlapping with the fixed electrodes 382, 384, 386 and 388 of the sensor element 3, protrusions 481 having conductivity are provided, and the fixed electrodes 392, 394, 396, 398 on the wires 41 are provided. In the overlapping portions, protrusions 482 having conductivity are provided.
Then, the fixed electrodes 382, 384, 386, 388 and the wiring 41 are electrically connected through the protruding portion 481, and the fixed electrodes 392, 394, 396, 398 and the wiring 41 are connected through the protruding portion 482. It is electrically connected.

Similarly, in the portions overlapping the fixed electrodes 381, 383, 385, 387 of the sensor element 3 on the wires 42, protrusions 471 having conductivity are provided, and the fixed electrodes 391, 393, 395, on the wires 42. At portions overlapping with 397, conductive projections 472 are provided.
Then, the fixed electrodes 381, 383, 385, 387 and the wiring 42 are electrically connected through the projection 471, and the fixed electrodes 391, 393, 395, 397, and the wiring 42 through the projection 472. It is electrically connected.

Similarly, in the portion of the wiring 43 overlapping the fixing portion 31 of the sensor element 3, a conductive protrusion 50 is provided.
The fixing portion 31 and the wiring 43 are electrically connected to each other through the protrusion 50.

The physical quantity sensor 1 uses the electrode 44 (wiring 41) and the electrode 46 (wiring 43) to make the capacitance and the first fixation between the first fixed electrodes 382, 384, 386, 388 and the movable electrode portion 36. The capacitance between the electrodes 392, 394, 396, 398 and the movable electrode portion 37 can be measured.
The physical quantity sensor 1 uses the electrode 45 (wiring 42) and the electrode 46 (wiring 43) to reduce the capacitance between the second fixed electrodes 381, 383, 385, 387 and the movable electrode portion 36, and The electrostatic capacitance between the two fixed electrodes 391, 393, 395, 397 and the movable electrode portion 37 can be measured.

  The constituent materials of the protrusions 50, 471, 472, 481, 482 are not particularly limited as long as they have conductivity, and various electrode materials can be used. For example, Au, Pt, Ag Metals such as simple metals such as Cu, Al, etc. or alloys containing these are suitably used. By forming the protrusions 50, 471, 472, 481, 482 using such a metal, the contact resistance between the wires 41, 42, 43 and the fixed electrode portions 38, 39 and the fixed portion 31 is reduced. be able to.

  In the wires 41, 42, 43 extending from the electrodes 44, 45, 46 to the sensor element 3 side, in the regions overlapping the lid member 5 on the wires 41, 42, 43, protrusions 491, 492, which have insulating properties 493 is provided. This is for airtightly sealing the space in which the sensor element 3 is accommodated when bonding the support substrate 2 and the lid member 5 described later.

The lid member 5 has a function of protecting the sensor element 3 described above.
The lid member 5 has a plate shape, and a recess 51 is provided on the lower surface (the other main surface). The recess 51 is formed by providing an air gap between the movable portion 33 of the sensor element 3 and the movable electrode portions 36 and 37 so as to allow displacement of the sensor element 3.

Here, in the region where the wires 41, 42, 43 and the lid member 5 overlap, the thickness dimension (length in the Z-axis direction) of the wires 41, 42, 43 is the depth dimension of the grooves 22, 23, 24 ( Is smaller than the length in the Z-axis direction), and the thickness dimensions (length in the Z-axis direction) of the wires 41, 42, 43 and the thickness dimensions (the length in the Z-axis direction) of the protrusions 491, 492, 493 And the depth dimension of the groove portions 22, 23, 24 is larger than the depth dimension (the length in the Z-axis direction) of the groove portions 22, 23, 24.
Thereby, in the physical quantity sensor 1, when the support substrate 2 and the lid member 5 are bonded, the wires 41, 42 and 43 and the protrusions 491, 492 and 493 are formed by the support substrate 2 and the lid member 5 coming into close contact. The space in which the sensor element 3 is accommodated is hermetically sealed by being pressed and joined.

The lower surface of the lid member 5 is bonded to the upper surface of the support substrate 2 described above. The method for bonding the lid member 5 and the support substrate 2 is not particularly limited. For example, a bonding method using an adhesive, an anodic bonding method, a direct bonding method or the like can be used, but the anodic bonding method is used Is preferred.
Moreover, as a constituent material of the lid member 5, a semiconductor is preferable as in the constituent material of the sensor element 3 described above, and specifically, it is preferable to use a silicon material such as single crystal silicon or polysilicon, for example.
Thereby, the physical quantity sensor 1 can perform anodic bonding of the support substrate 2 (glass substrate) and the lid member 5 (silicon substrate).

  As described above, in the physical quantity sensor 1, the deposition film 70 is formed on the surfaces of the fixed electrodes 381 to 388 and 391 to 398 and the movable electrodes 361 to 365 and 371 to 375 adjacent to each other. Thus, apparently, the distance L1 between the fixed electrodes 381 to 388 and 391 to 398 and the movable electrodes 361 to 365 and 371 to 375 can be narrowed. That is, the distance L2 between the fixed electrodes 381 to 388, 391 to 398 on which the deposited film 70 is formed and the movable electrodes 361 to 365, 371 to 375 is equal to that of the fixed electrodes 381 to 388, 391 in which the deposited film 70 is not formed. Since L1> L2, which is narrower than the distance L1 between 398 and the movable electrodes 361 to 365 and 371 to 375, the fixed electrodes 381 to 388 and 391 to 398 and the movable electrodes 361 to 365 in which the deposited film 70 is not formed are satisfied. , 371-375, electrostatic capacitance values generated between the fixed electrodes 381-388, 391-398 on which the deposited film 70 is formed and the movable electrodes 361-365, 371-375. Can be increased. Therefore, detection sensitivity is improved, and the physical quantity sensor 1 having high detection sensitivity can be obtained.

  In addition, since the deposition film 70 is a semiconductor thin film, specifically, a silicon germanium thin film, it can be easily formed by a vapor deposition method.

  Further, since the sensor element 3 which is an acceleration sensor element is provided, it is possible to obtain the physical quantity sensor 1 as an acceleration sensor capable of detecting the acceleration with high accuracy.

[Method of manufacturing physical quantity sensor]
Next, an example of a method of manufacturing the physical quantity sensor 1 will be described with reference to FIGS. 5 to 7D.
FIG. 5 is a flowchart showing the main manufacturing steps of the physical quantity sensor, and FIGS. 6A to 6E are schematic cross-sectional views for explaining the manufacturing steps of the physical quantity sensor, and FIGS. It is a schematic cross section explaining a process.

As shown in FIG. 5, the method of manufacturing the physical quantity sensor 1 includes a substrate preparation process Step 1, a sensor substrate bonding process Step 2, a sensor element formation process Step 3, a lid substrate bonding process Step 4, and a division process Step 5. There is.
In addition, although it demonstrates on the premise of taking multiple pieces here, you may manufacture separately.

[Substrate preparation process Step 1]
First, as shown in FIG. 6A, as shown in FIG. 6D, a wafer-like base substrate 102 to be the supporting substrate 2 by dividing into pieces afterward, and a wafer-like sensor substrate 103 to be the sensor element 3; A wafer-like lid substrate 105 to be the lid member 5 is prepared. Here, each substrate is in a state in which the base substrate wiring forming process, the sensor substrate forming process, and the lid substrate recess forming process have already been performed. These three steps are described below.

[Base substrate wiring formation process]
The concave portion 21 and the groove portions 22 and 23 are formed by etching the upper surface (one main surface) of the base substrate 102. At this time, although not shown in FIG. 6A, the groove portions 24 are also collectively formed. The method for forming the recess 21 and the groove 22 to 24 (etching method) is not particularly limited. For example, physical etching such as plasma etching, reactive ion etching, beam etching, light assisted etching, chemical etching such as wet etching It is possible to use one or a combination of two or more of the selective etching methods and the like. The same method can be used in etching in each of the following steps.

Moreover, in the case of the above-mentioned etching, the mask formed of the photolithographic method can be used suitably, for example. Further, the recess 21 and the grooves 22 to 24 can be formed in order by repeating the mask formation, the etching, and the mask removal a plurality of times. The mask is then removed after etching. As a method of removing the mask, for example, when the mask is made of a resist material, a resist stripping solution is used, and when the mask is made of a metal material, a metal stripping solution such as phosphoric acid solution is used. be able to.
The recess 21 and the grooves 22 to 24 (a plurality of recesses with different depths) may be simultaneously formed by using, for example, a gray scale mask as the mask.

Next, the wiring 41 is formed in the groove 22 of the base substrate 102, and the wiring 42 is formed in the groove 23. At this time, although not shown in FIG. 6A, the wiring 43 is formed together with the wirings 41 and 42 in the groove 24.
At this time, the thickness dimensions (length in the Z-axis direction) of the wires 41, 42 and 43 are formed to be smaller than the depth dimensions (length in the Z-axis direction) of the grooves 22, 23, 24.
The method of forming the wirings 41, 42 and 43 (film forming method) is not particularly limited, but, for example, vacuum evaporation, sputtering (low temperature sputtering), dry such as ion plating, plating method, electrolytic plating, electroless plating, etc. Wet plating method, thermal spraying method, thin film bonding method and the like. The same method can be used in film formation in each of the following steps. Thereafter, although not shown in FIG. 6A, electrodes 44 to 46 are similarly formed.

Next, in plan view, conductive protrusions 471 and 472 are formed (deposited) at positions overlapping the wires 42 by sputtering, vacuum evaporation, or the like.
At this time, although not shown in FIG. 6A, similarly, conductive protrusions 481 and 482 at positions overlapping with the wiring 41 and conductive protrusions 50 at positions overlapping the wiring 43 are collectively formed. Do. In addition, in the wires 41, 42, 43 extending from the electrodes 44, 45, 46 to the sensor element 3 side, protruding portions 491, 492, having an insulating property at positions overlapping the lid member 5 on the wires 41, 42, 43. Form 493.
At this time, the thickness dimension (length in the Z-axis direction) of the wires 41, 42, 43 and the thickness dimension (length in the Z-axis direction of the protrusions 50, 471, 472, 481, 482, 491, 492, 493) And the depth of the grooves 22, 23, 24 is greater than the depth dimension (length in the Z-axis direction) of the grooves 22, 23, 24.

Note that for the base substrate 102, an amorphous material having insulating properties is preferably used, and a transparent substrate is more preferably used as the amorphous substrate. Specifically, it is preferable to use, as the base substrate 102, a glass substrate using a glass material (eg, borosilicate glass) containing an alkali metal ion (movable ion).
Further, it is preferable to use a transparent electrode material (in particular, ITO) as the constituent material of the wires 41 to 43, and it is preferable to use Au as the constituent material of the protrusions 50, 471, 472, 481, 482, It is preferable to use SiO ₂ as a constituent material of the portions 491, 492, 493.
Note that after the formation of the wires 41 to 43 and the electrodes 44 to 46, the upper surfaces of the wires 41 to 43 and the base substrate 102 excluding the connection regions with the protrusions 50, 471, 472, 481, 482, 491, 492, 493 described later. An insulating film made of various materials having insulating properties may be formed (including the recess 21). Thus, the insulation separation between the base substrate 102 and the sensor substrate 103 can be reliably performed.

[Sensor substrate formation process]
Next, as shown in FIG. 6A, the surface of the wafer-like sensor substrate 103 that will later become a plurality of sensor elements 3 is cleaned in advance by, for example, the reverse sputtering method to remove foreign substances such as oxide films.
The sensor substrate 103 is preferably thicker than the thickness of the sensor element 3. Thereby, the handleability of the sensor substrate 103 can be improved (for example, damage reduction at the time of transportation, setup, etc.).
Further, the thickness of the sensor substrate 103 may be the same as the thickness of the sensor element 3, and for the sensor substrate 103, it is preferable to use a silicon substrate which is a semiconductor substrate.

[Step of forming lid substrate recess]
Next, as shown in FIG. 6D, the surface of the wafer-like lid substrate 105 to be the lid member 5 for protecting the sensor element 3 is cleaned in advance by, for example, the reverse sputtering method to remove foreign matter such as oxide film. Remove it.
Subsequently, the recess 51 is formed by etching the lower surface (the other main surface) of the lid substrate 105. The method for forming the recess 51 may be the same as the method for forming the recess 21 and the grooves 22 to 24 in the base substrate 102.
As a constituent material of the lid substrate 105, a silicon substrate which is a semiconductor substrate is preferable.
The base substrate wiring formation step, the sensor substrate formation step, and the lid substrate recess formation step in the substrate preparation step Step 1 can be performed simultaneously using separate lines.

[Sensor substrate bonding process Step 2]
Next, as shown in FIG. 6A, the sensor substrate 103 is disposed on the upper surface of the base substrate 102 on which the recess 21 is provided, and the base substrate 102 and the sensor substrate 103 are bonded. Note that anodic bonding is preferably used to bond the base substrate 102 and the sensor substrate 103.

Next, as shown in FIG. 6B, the sensor substrate 103 is thinned to the thickness of the sensor element 3 (length in the Z-axis direction). Although the method of thinning is not particularly limited, for example, a CMP method and a dry polish method can be suitably used.
If the thickness (length in the Z-axis direction) of the sensor substrate 103 is the same as the thickness (length in the Z-axis direction) of the sensor element 3 from the beginning, this thinning is not necessary.

[Sensor Element Forming Step Step 3]
Next, as shown in FIG. 6C, the sensor element 103 is formed by etching the sensor substrate 103. The method of forming the sensor element 3 will be described in detail with reference to FIGS. 7A to 7D. 7A to 7D correspond to the region where the movable electrodes 371, 372 and the fixed electrodes 391, 392, 393 in FIG. 2 are formed.

In the method of forming the sensor element 3, as shown in FIGS. 7A to 7C, the step of forming the groove 60 by patterning the sensor substrate 103 and the step of forming the groove 60 as shown in FIG. Forming the deposited film 70 on the side surface.
In the step of forming the grooves 60, a mask M for forming the grooves 60 is formed on the sensor substrate 103 (FIG. 7A), and the grooves 60 are formed by deep etching processing technology (Bosch process). The groove 60 first etches the region exposed from the mask M with an etching gas such as SF ₆ to a desired depth (FIG. 7B).

Thereafter, by flowing a C ₄ F ₈ gas, a material such as Teflon (registered trademark) is deposited by plasma polymerization, and the side surfaces and the bottom surface of the groove 60 are coated with a protective film (passivation mode). Next, by flowing SF ₆ gas again, the protective film on the bottom is scraped off, Si (silicon) of the sensor substrate 103 is exposed, and Si is etched by F radicals (etching mode). Therefore, the passivation mode and the etching mode are alternately performed to deposit the next protective film before the protective film on the side surface disappears, and the surface on which the mask M is formed on the sensor substrate 103 A groove 60 (penetration groove) penetrating to the opposite surface is formed (FIG. 7C). By forming the groove 60, the movable electrodes 371 and 372 and the fixed electrodes 391, 392 and 393 can be formed on the sensor substrate 103.

  Next, in the step of forming the deposited film 70, after removing the mask M, vapor phase growth is performed to deposit the components in the vapor phase on the surface of the substrate crystal. A deposited film 70 is formed (FIG. 7D). Here, the vapor phase growth method is a chemical vapor deposition (CVD) method or a physical vapor deposition (PVD) method. Examples of the chemical vapor deposition include thermal CVD (thermal chemical vapor deposition) and plasma CVD (plasma CVD). Above all, in the case of selective epitaxial growth performed under ultra-high vacuum, a conformal deposited film 70 can be formed. Forming the deposited film 70 in the groove 60 by a deposition method such as these, thereby forming the sensor element 3 in which the deposited film 70 is formed on the movable electrodes 371, 372 and the fixed electrodes 391, 392, 393, Become. Note that the deposition film 70 is a semiconductor thin film, and specifically, for example, a silicon thin film or a germanium thin film, and electrostatic capacitance can be reliably provided between the movable electrodes 371, 372 and the fixed electrodes 391, 392, 393, It is preferable to produce. At this time, the silicon thin film and the germanium thin film are formed under a temperature environment of 800 ° C. or more and 1000 ° C. or less. Furthermore, if the deposition film 70 is a silicon germanium thin film which is an alloy of silicon and germanium, the processing temperature is higher than that of a silicon thin film or a germanium thin film using a selective epitaxial method which is one of the chemical vapor deposition methods. It is possible to form a good deposited film 70 in a relatively low temperature region of 500 ° C. or more and 600 ° C. or less.

  Here, in the deep etching technique (Bosch process), generally, the width L1 of the groove 60 is wider than the opening width L of the mask M due to the side etching, and the relationship of L1> L is established. It is known. Note that the width L1 of the groove 60 in the present embodiment means the distance between the mutually opposing side surfaces of the groove 60. This is because the etching in the etching mode is isotropic etching, and the side direction of the groove 60 is etched simultaneously with the depth direction of the groove 60, and the portion under the mask M is etched, and the width of the groove 60 is L1 becomes wider than the opening width L of the mask M. Therefore, the deposition film 70 is formed on the surface of the groove 60, that is, on the surfaces of the fixed electrodes 391, 392, 393 and the movable electrodes 371, 372 formed by the penetrating grooves 60 adjacent to each other. The distance L2 between the fixed electrodes 391, 392, 393 and the movable electrodes 371, 372 (the width of the groove 60 in which the deposited film 70 is formed) L2 corresponds to the conventional fixed electrodes 391, 392, 393, and the movable electrodes 371, 372. (The width of the groove 60 where the deposited film 70 is not formed) L1. Therefore, it is possible to satisfy the relationship of L1> L2, to increase the capacitance value generated between the fixed electrodes 391, 392, 393, and the movable electrodes 371, 372, and to manufacture the physical quantity sensor 1 having high detection sensitivity. Can.

Lid-substrate bonding step Step 4
Next, as shown in FIG. 6D, a wafer-like lid substrate 105 to be the lid member 5 is bonded to the upper surface of the base substrate 102 by having a plurality of recesses 51 and singulating. Thus, each sensor element 3 is accommodated in each recess 51 by the base substrate 102 and the lid substrate 105.
The method for bonding the base substrate 102 and the lid substrate 105 is not particularly limited, and, for example, a bonding method using an adhesive, an anodic bonding method, a direct bonding method, or the like can be used. It is preferred to use.

[Division Process Step 5]
Next, as shown in FIG. 6E, the base substrate 102 and the lid substrate 105 integrally containing the sensor element 3 are separated into individual pieces of the sensor element 3 using a dividing device (for example, a dicing device) not shown. The physical quantity sensor 1 is obtained by dividing into.
Note that the base substrate 102 becomes the support substrate 2 and the lid substrate 105 becomes the lid member 5 by division.

  As described above, in the method of manufacturing the physical quantity sensor 1, by bonding the sensor substrate 103 to the base substrate 102, the thickness of the substrate is thicker than in the case of the sensor substrate 103 alone, and the strength of the substrate is increased. it can. Therefore, when the sensor substrate 103 is patterned to form the groove 60, breakage of the sensor substrate 103 can be reduced, and the groove 60 can be easily formed. Further, after forming the groove 60, the width of the groove 60 can be narrowed by forming the deposited film 70 on the surface of the groove 60 using a vapor deposition method. Therefore, the capacitance value generated between the grooves 60 can be increased, and the physical quantity sensor 1 having high detection sensitivity can be manufactured.

  In addition, the distance L2 between the surfaces facing each other, which is the width of the groove 60 in which the deposited film 70 is formed, is smaller than the width L1 of the groove 60 and satisfies the relationship L1> L2. The capacitance value generated between the grooves 60 can be larger in the groove 60 in which the deposited film 70 is formed than in the groove 60 not formed, and the detection sensitivity of the physical quantity sensor 1 can be improved.

<Modification>
Next, as a modification of the physical quantity sensor 1 according to the embodiment of the present invention, a gyro sensor (angular velocity sensor) that detects a physical quantity such as an angular velocity will be described with reference to FIGS. 8 and 9.
FIG. 8 is a schematic plan view showing a schematic structure of a physical quantity sensor according to a modification of the embodiment of the present invention, and FIG. 9 is a schematic cross-sectional view taken along line D-D in FIG. In FIGS. 8 and 9, the X axis, the Y axis, and the Z axis are illustrated as three axes orthogonal to each other.

  A physical quantity sensor 1a according to a modification includes a support substrate 2a, a sensor element 3a which is an angular velocity sensor element, and a lid member 5a as shown in FIGS. 8 and 9, and detects an angular velocity ωz around the Z axis. Gyro sensor. For convenience, in FIG. 8, the support substrate 2a and the lid member 5a are omitted. 9 corresponds to a cross section taken along the line D-D of FIG.

  The material of the support substrate 2a is, for example, glass or silicon. The recess 12 is provided in the support substrate 2 a. The recess 12 constitutes a cavity 12a. The support substrate 2 a has a post portion 14 provided on the bottom surface (the surface of the support substrate 2 a defining the recess 12) 12 b of the recess 12. The post portion 14 is a member for supporting the sensor element 3a.

  The lid member 5a is provided on the support substrate 2a (on the side of the support substrate 2a in the + Z-axis direction). The material of the lid member 5a is, for example, silicon. The support substrate 2a and the lid member 5a may be joined by anodic bonding. A recess 15 is formed in the lid member 5a, and the recess 15 constitutes a cavity 15a.

  The sensor element 3a is bonded to the support substrate 2a by, for example, anodic bonding. The sensor element 3a is accommodated in cavities 12a and 15a formed by the support substrate 2a and the lid member 5a. The cavities 12a and 15a are desirably in a reduced pressure state. Thereby, it is possible to suppress the vibration of the sensor element 3a from being attenuated by the air viscosity.

  The sensor element 3a, which is an angular velocity sensor element, includes the fixing portion 130, the driving spring portion 140, the driving portion 150, the detecting spring portion 160, the connecting portion 170, the detecting portion 180, the first connecting portion 190, and the first And a second connecting portion 192.

  A plurality of fixing portions 130 are provided and fixed to the support substrate 2 a. The fixing portion 130 is bonded to the post portion 14 of the support substrate 2a by, for example, anodic bonding. The fixing portion 130 is connected to at least one of the drive spring portion 140 and the detection spring portion 160.

  The drive spring unit 140 connects the fixed unit 130 and the movable drive electrode 152 of the drive unit 150. The drive spring portion 140 is provided to be separated from the support substrate 2a. In the illustrated example, the drive spring portion 140 extends in the Y axis direction while reciprocating in the X axis direction. The drive spring portion 140 can be smoothly extended and contracted in the Y axis direction which is the vibration direction of the drive portion 150 (the vibration direction of the movable drive electrode 152).

  The drive unit 150 vibrates the detection unit 180 in the Y-axis direction. A plurality of driving units 150 are provided. In the illustrated example, two drive units 150 are provided (a first drive unit 150a and a second drive unit 150b), and a detection unit 180 is provided between the first drive unit 150a and the second drive unit 150b. It is provided. In the illustrated example, the first drive unit 150a is provided closer to the −Y-axis direction than the second drive unit 150b. The drive unit 150 is configured of a movable drive electrode 152 and fixed drive electrodes 154 and 156.

  The movable drive electrode 152 is provided apart from the support substrate 2 a. The movable drive electrode 152 has a comb-like shape including a trunk extending in the X-axis direction and a plurality of branches extending from the trunk in the Y-axis direction. In the illustrated example, the movable drive electrode 152 is supported by six drive spring portions 140. Specifically, the four corners of the movable drive electrode 152 are connected by the drive spring portion 140, and further, the middle portion 153 of the movable drive electrode 152 is connected by the two drive spring portions 140. Therefore, as compared with the case where only the four corners of the movable drive electrode 152 are connected by the drive spring portion 140, the movable drive electrode 152 is not easily bent and, for example, spurious vibration hardly occurs.

  The fixed drive electrodes 154 and 156 are fixed to the support substrate 2a. The fixed drive electrodes 154 and 156 are joined, for example, by anodic bonding to a post (not shown) of the support substrate 2a. The fixed drive electrodes 154 and 156 are provided to face the movable drive electrode 152. That is, the fixed drive electrode 154 and the movable drive electrode 152 form a capacitance, and the fixed drive electrode 156 and the movable drive electrode 152 form a capacitance. In the first drive unit 150 a, the fixed drive electrode 154 is provided on the + Y-axis direction side of the movable drive electrode 152, and the fixed drive electrode 156 is provided on the −Y-axis direction side of the movable drive electrode 152. In the second drive unit 150 b, the fixed drive electrode 154 is provided on the −Y-axis direction side of the movable drive electrode 152, and the fixed drive electrode 156 is provided on the + Y-axis direction side of the movable drive electrode 152. The fixed drive electrodes 154 and 156 have, for example, a comb-like shape corresponding to the movable drive electrode 152.

  The detection spring unit 160 connects the fixing unit 130 and the detection unit 180. The detection spring portion 160 is provided separately from the support substrate 2a. The detection spring portion 160 is configured to be deformable in the X-axis direction according to the displacement of the detection portion 180 in the X-axis direction.

  A plurality of detection spring portions 160 are provided. The first detection spring portion (first spring portion) 160 a of the plurality of detection spring portions 160 is connected to the first fixing portion (first fixing portion of the plurality of fixing portions 130) 130 a. The first detection spring portion 160 a connects the first fixed portion 130 a and the detection portion 180. The second detection spring portion (second spring portion) 160 b of the plurality of detection spring portions 160 connects the second fixed portion (second fixed portion of the plurality of fixed portions 130) 130 b to the detection portion 180. ing. The third detection spring portion (third spring portion) 160c of the plurality of detection spring portions 160 couples the third fixed portion (third fixed portion of the plurality of fixed portions 130) 130c to the detection portion 180. ing.

  In the illustrated example, two first fixing portions 130a are provided, and one first fixing portion 130a and second fixing portion 130b are integrally provided, and the other first fixing portion 130a and third fixing are provided. The portion 130c is integrally provided. The first detection spring portion 160a is provided between the second detection spring portion 160b and the third detection spring portion 160c in plan view (as viewed in the Z-axis direction). Although not shown, the fixing portions 130a, 130b and 130c may be provided independently of each other. Further, the number of fixing portions 130a, 130b, 130c is not particularly limited.

  The connection unit 170 connects the movable drive electrode 152 of the drive unit 150 and the detection unit 180. The connection portion 170 is provided to be separated from the support substrate 2 a. The connection unit 170 transmits the vibration in the Y-axis direction of the movable drive electrode 152 of the drive unit 150 to the detection unit 180. Thus, the detection unit 180 can vibrate in the Y-axis direction.

  The detection unit 180 detects an angular velocity. The detection unit 180 includes a first spring connection unit 280, a second spring connection unit 282, an intermediate unit 283, and a movable electrode 284.

  Each of the first spring connection portion 280 and the second spring connection portion 282 is connected to the two detection spring portions 160. The detection spring unit 160 is connected to the four corners of the detection unit 180. The first spring connection portion 280 is located closer to the −X axis direction than the second spring connection portion 282. In the illustrated example, the size in the Y-axis direction of the first spring connection portion 280 and the size in the Y-axis direction of the second spring connection portion 282 are the same. The second spring connection portion 282 of the first detection unit 180 a and the second spring connection portion 282 of the second detection unit 180 b are connected by the first connection portion 190. The size of the first connection portion 190 in the Y-axis direction is smaller than the size of the spring connection portions 280 and 282 in the Y-axis direction. The second spring connection portion 282 of the third detection portion 180 c and the second spring connection portion 282 of the fourth detection portion 180 d are connected by the second connection portion 192. The size of the second connection portion 192 in the Y-axis direction is smaller than the size of the spring connection portions 280 and 282 in the Y-axis direction. In the example of illustration, the planar shape of the connection parts 190 and 192 is a rectangle.

  The middle portion 283 is located between the first spring connection 280 and the second spring connection 282. The middle portion 283 is connected to the movable electrode 284 and the coupling portion 170. The planar shape of the middle portion 283 is, for example, a rectangle. In the illustrated example, the size of the middle portion 283 in the Y-axis direction is the same as the size of the spring connection portions 280 and 282 in the Y-axis direction.

  Two movable electrodes 284 are provided in one detection unit 180. One movable electrode 284 connects the first spring connection portion 280 and the middle portion 283. The other movable electrode 284 connects the second spring connection portion 282 and the middle portion 283. The movable electrode 284 has a comb-like shape including a trunk extending in the X-axis direction and a plurality of branches extending from the trunk in the Y-axis direction. The branch has a portion overlapping with the fixed electrode 286 when viewed in the X-axis direction. That is, the branch has a portion facing the fixed electrode 286. The movable electrode 284 vibrates in the Y-axis direction by the vibration of the drive unit 150, and is displaced in the X-axis direction according to the angular velocity.

  The fixed electrode 286 is fixed to the support substrate 2a. The fixed electrode 286 is bonded to a post (not shown) of the support substrate 2a by anodic bonding, for example. The fixed electrode 286 has a comb-like shape corresponding to the movable electrode 284. In the illustrated example, four fixed electrodes 286 are provided to sandwich the movable electrode 284 in one detection unit 180. That is, they are provided on the + Y axis direction side and the −Y axis direction side of the two movable electrodes 284 respectively.

  Here, on the surfaces of the movable electrode 284 and the fixed electrode 286, as shown in FIG. 9, a deposited film 70, for example, a semiconductor thin film such as a silicon germanium thin film is formed. Since the deposited film 70 is formed on the surfaces of the movable electrode 284 and the fixed electrode 286 adjacent to each other, the capacitance value generated between the movable electrode 284 and the fixed electrode 286 can be increased. it can.

  In the physical quantity sensor 1a, the drive unit 150 sets the first detection unit 180a and the second detection unit 180b, and the third detection unit 180c and the fourth detection unit 180d in reverse phase (opposite phase) with each other at a predetermined frequency. , Y-axis direction can be vibrated.

  When the angular velocity ωz around the Z axis is applied to the physical quantity sensor 1a while the detection units 180a, 180b, 180c, and 180d are performing the above-described vibration, Coriolis force is exerted, and the first detection unit 180a and the second detection unit 180b The third detection unit 180c and the fourth detection unit 180d are displaced in mutually opposite directions in the X-axis direction. While receiving the Coriolis force, the detectors 180a, 180b, 180c and 180d repeat this operation (detect and vibrate).

  By the displacement of the detection units 180a, 180b, 180c, and 180d in the X-axis direction, the distance between the movable electrode 284 and the fixed electrode 286 changes in accordance with the Coriolis force. Therefore, the capacitance between the movable electrode 284 and the fixed electrode 286 changes in accordance with the Coriolis force. By detecting the amount of change in capacitance between the movable electrode 284 and the fixed electrode 286, the angular velocity ωz around the Z axis can be obtained.

  As described above, in the physical quantity sensor 1a, since the deposition film 70 is formed on the surfaces of the movable electrode 284 and the fixed electrode 286 adjacent to each other, between the movable electrode 284 and the fixed electrode 286 The capacitance value generated in the above can be increased, and the physical quantity sensor 1a having high detection sensitivity can be obtained.

Moreover, since the sensor element 3a which is an angular velocity sensor element is provided, the physical quantity sensor 1a as a gyro sensor which can detect an angular velocity with high precision can be obtained.
In the present modification, an angular velocity sensor element is described as the sensor element 3a. However, the sensor element 3a is not limited to this and may be a composite element of the acceleration sensor element and the angular velocity sensor element described above. Absent. By providing a combined element of an acceleration sensor element and an angular velocity sensor element, it is possible to obtain a combined sensor of an acceleration sensor and an angular velocity sensor having high detection sensitivity.

[Inertial Measurement Unit]
Next, an inertial measurement unit (IMU) 600 including the physical quantity sensors 1 and 1a according to the present invention will be described with reference to FIGS. 10 and 11. FIG.
FIG. 10 is an exploded perspective view showing a schematic configuration of the inertial measurement unit according to the embodiment of the present invention. FIG. 11 is a perspective view showing an arrangement example of the inertial sensor of the inertial measurement unit according to the embodiment of the present invention.

  As shown in FIG. 10, the inertial measurement unit 600 includes an outer case 601, a joining member 610, a sensor module 625 including an inertial sensor such as the physical quantity sensor 1 or 1a, and the like. In other words, the sensor module 625 is joined (inserted) by interposing the joining member 610 in the inside 603 of the outer case 601. The sensor module 625 is composed of an inner case 620 and a substrate 615. In addition, although the part name is made into the outer case and the inner case in order to make the description easy to understand, you may call it the 1st case and the 2nd case.

  The outer case 601 is a pedestal formed by cutting aluminum into a box shape. The material is not limited to aluminum, and other metals such as zinc and stainless steel, resin, or a composite material of metal and resin may be used. The outer shape of the outer case 601 is a rectangular solid having a substantially square planar shape, similar to the overall shape of the above-described inertial measurement unit 600, and through holes (flange holes respectively) near two apexes located in the diagonal direction of the square. ) 602 is formed. In addition, it is not limited to the through hole (idiot hole) 602, for example, a notch which can be screwed with a screw (notched hole in the outer case 601 where the through hole (idiot hole) 602 is located) The structure to be formed may be formed and screwed, or a flange (ear) may be formed on the side surface of the outer case 601 and the flange portion may be screwed.

  The outer case 601 has a rectangular parallelepiped outer shape and a box shape without a lid, and an inner portion 603 (inner side) of the outer case 601 is an inner space (container) surrounded by the bottom wall 605 and the side wall 604. In other words, the outer case 601 is in the form of a box whose one surface facing the bottom wall 605 is an opening surface, and the sensor module is arranged to cover most of the opening in the opening surface (close the opening). 625 is accommodated, and the sensor module 625 is exposed from the opening (not shown). Here, the opening surface facing the bottom wall 605 is the same surface as the upper surface 607 of the outer case 601. In addition, the planar shape of the inner portion 603 of the outer case 601 is a hexagonal shape obtained by chamfering the corners of two apexes of a square, and the two beveled apex portions correspond to the positions of the through holes (idiot holes) 602 There is. Further, in the cross-sectional shape (thickness direction) of the inside 603, the bottom wall 605 is formed with a first joint surface 606 as a bottom wall one step higher than the central portion at the periphery of the inside 603, that is, the inner space. . That is, the first joint surface 606 is a part of the bottom wall 605, and is a step-like portion formed in a ring shape surrounding the central portion of the bottom wall 605 in a planar manner, and is more than the bottom wall 605. This is a surface whose distance from the opening surface (the same surface as the upper surface 607) is short.

  Although the outer case of the outer case 601 has been described as an example in which the outer shape of the outer case 601 is a rectangular solid having a substantially square planar shape and a box shape without a lid, the outer shape of the outer case 601 is not limited thereto. It may be a polygon such as a polygon, or the corners of the vertexes of the polygon may be chamfered, or it may be a planar shape in which each side is a curve. Further, the planar shape of the inside 603 (inner side) of the outer case 601 is not limited to the hexagonal shape described above, and may be a square (square) such as a square or another polygonal shape such as an octagon. The outer shape of the outer case 601 and the planar shape of the inner portion 603 may or may not be similar.

  The inner case 620 is a member for supporting the substrate 615, and has a shape that fits into the inside 603 of the outer case 601. Specifically, in plan view, it is a hexagon with beveled corners of two apexes of a square, and is provided with an opening 621 which is a rectangular through hole and a surface on the side supporting the substrate 615. A recess 631 is formed. The two beveled top portions correspond to the positions of the through holes (idiot holes) 602 of the outer case 601. The height in the thickness direction (Z-axis direction) is lower than the height from the top surface 607 of the outer case 601 to the first joint surface 606. In the preferred embodiment, the inner case 620 is also formed by cutting out aluminum, but other materials may be used as in the outer case 601.

  On the back surface (surface on the outer case 601 side) of the inner case 620, a guide pin for positioning the substrate 615 and a support surface (neither is shown) are formed. The substrate 615 is set (positioned and mounted) on the guide pins and the support surface and is bonded to the back surface of the inner case 620. The details of the substrate 615 will be described later. The peripheral portion of the back surface of the inner case 620 is a second joint surface 622 formed of a ring-shaped flat surface. The second bonding surface 622 is substantially similar in shape to the first bonding surface 606 of the outer case 601 in a plan view, and when the inner case 620 is set to the outer case 601, the second bonding surface 622 holds the bonding member 610 in a state of holding it. Will face each other. The structure of the outer case 601 and the inner case 620 is an example, and the present invention is not limited to this structure.

Next, with reference to FIG. 11, the configuration of the substrate 615 on which the inertial sensor is mounted will be described.
As shown in FIG. 11, the substrate 615 is a multilayer substrate in which a plurality of through holes are formed, and a glass epoxy substrate (glass epoxy substrate) is used. In addition, it does not limit to a glass epoxy board, and it may be a rigid board on which a plurality of inertial sensors, electronic parts, connectors and the like can be mounted. For example, a composite substrate or a ceramic substrate may be used.

  A connector 616, an angular velocity sensor 617z constituted by the physical quantity sensor 1a, and the physical quantity sensor 1 as an acceleration sensor are mounted on the surface (surface on the inner case 620 side) of the substrate 615. The connector 616 is a plug-type (male) connector and includes two rows of connection terminals arranged at equal pitches in the X-axis direction. Preferably, 10 pins in one row are used as connection terminals for a total of 20 pins in two rows, but the number of terminals may be changed appropriately according to design specifications. The angular velocity sensor 617z is a gyro sensor that detects the angular velocity of one axis in the Z-axis direction.

  In addition, on the side surface of the substrate 615 in the X-axis direction, an angular velocity sensor 617x configured of a physical quantity sensor 1a that detects an angular velocity of one axis in the X-axis direction is set. Has been implemented. Similarly, on the side surface of the substrate 615 in the Y-axis direction, an angular velocity sensor 617 y configured by the physical quantity sensor 1 a that detects the angular velocity of one axis in the Y-axis direction such that the mounting surface (mounting surface) is orthogonal to the Y axis. Has been implemented.

  A control IC 619 as a control unit is mounted on the back surface (the surface on the outer case 601 side) of the substrate 615. The control IC 619 is an MCU (Micro Controller Unit), includes a storage unit including a non-volatile memory, an A / D converter, and the like, and controls each unit of the inertial measurement unit 600. The storage unit stores a program that defines the order and content for detecting acceleration and angular velocity, a program that digitizes detection data and incorporates it into packet data, and accompanying data. In addition, a plurality of electronic components are mounted on the substrate 615.

  Such an inertial measurement unit 600 has high performance because it includes the physical quantity sensor 1, 1 a having high detection sensitivity and the control unit.

[Portable Electronics]
Next, a portable electronic device 800 including the physical quantity sensor 1 or 1a according to the present invention will be described with reference to FIGS. 12 and 13.
FIG. 12 is a plan view schematically showing the configuration of the portable electronic device according to the embodiment of the present invention. FIG. 13 is a functional block diagram showing a schematic configuration of a portable electronic device according to an embodiment of the present invention. Hereinafter, as an example of the portable electronic device 800, a wristwatch-type activity meter (active tracker) will be described.

  As shown in FIG. 12, a portable electronic device 800, which is a wristwatch-type activity meter (active tracker), is attached to a site (subject) such as a user's wrist by bands 832, 837, etc., and displays a digital display In addition to 823, wireless communication is possible. The physical quantity sensors 1 and 1a according to the present invention described above are incorporated in the portable electronic device 800 as an acceleration sensor that measures acceleration and an angular velocity sensor that measures angular velocity.

  The portable electronic device 800 includes a case 830 in which at least the physical quantity sensor 1 1 a is accommodated, and a processing unit 801 (see FIG. 13) which is accommodated in the case 830 and processes output data from the physical quantity sensor 1. And a translucent cover 871 closing the opening of the case 830. A bezel 878 is provided on the outside of the translucent cover 871 of the case 830. A plurality of operation buttons 880 and 881 are provided on the side surface of the case 830. Hereinafter, further detailed description will be made with reference to FIG. 13 as well.

  An acceleration sensor 813 as the physical quantity sensor 1 detects accelerations in directions of three axes intersecting (ideally orthogonal) with each other, and a signal (acceleration signal according to the magnitude and direction of the detected three-axis acceleration Output). Further, an angular velocity sensor 814 as the physical quantity sensor 1a detects angular velocities in the directions of three axes intersecting (ideally orthogonal) with each other, and signals (angular velocity according to the detected magnitude and direction of the detected three axial angular velocity Output signal).

  In the liquid crystal display (LCD) constituting the display unit 823, according to various detection modes, for example, positional information or movement amount using the GPS sensor 810 or the geomagnetic sensor 811, and an acceleration sensor 813 included in the physical quantity sensor 1 or 1a. The exercise information such as the amount of exercise using the angular velocity sensor 814 or the like, the biological information such as the pulse rate using the pulse sensor 815 or the time information such as the current time is displayed. In addition, the environmental temperature using the temperature sensor 816 can also be displayed.

  The communication unit 825 performs various controls for establishing communication between the user terminal and an information terminal (not shown). The communication unit 825 is, for example, Bluetooth (registered trademark) (BTLE: includes Bluetooth Low Energy), Wi-Fi (registered trademark) (Wireless Fidelity), Zigbee (registered trademark), NFC (Near field communication), ANT + (registered trademark) A transceiver or communication unit 825 compliant with a short distance wireless communication standard such as a trademark is configured to include a connector compliant with a communication bus standard such as USB (Universal Serial Bus).

  The processing unit 801 (processor) is configured by, for example, a micro processing unit (MPU), a digital signal processor (DSP), an application specific integrated circuit (ASIC), or the like. The processing unit 801 executes various processes based on the program stored in the storage unit 822 and the signals input from the operation unit 820 (for example, operation buttons 880 and 881). The processing by the processing unit 801 includes data processing for each output signal of the GPS sensor 810, the geomagnetic sensor 811, the pressure sensor 812, the acceleration sensor 813, the angular velocity sensor 814, the pulse sensor 815, the temperature sensor 816, and the time measuring unit 821 and the display unit 823. Display processing for displaying an image on the screen, sound output processing for outputting sound to the sound output unit 824, communication processing for communicating with an information terminal via the communication unit 825, power control processing for supplying power from the battery 826 to each unit, etc. Is included.

Such a portable electronic device 800 can have at least the following functions.
1. Distance: Measure the total distance from the start of measurement by high precision GPS function.
2. Pace: Displays the current running pace from the pace distance measurement.
3. Average Speed: Average Speed Calculates and displays the average speed from the start of driving to the present.
4. Elevation: Measure and display elevation by GPS function.
5. Stride: Measures and displays stride even in a tunnel where GPS radio waves do not reach.
6. Pitch: Measure and display the number of steps per minute.
7. Heart rate: The heart rate is measured and displayed by the pulse sensor.
8. Slope: Measure and display the slope of the ground during training or trail running in mountainous areas.
9. Auto lap: Automatic lap measurement is performed when running a certain distance or certain time set in advance.
10. Exercise calories burned: Display calories burned.
11. Number of steps: Display the total number of steps from the start of exercise.

  Note that the portable electronic device 800 can be widely applied to a running watch, a runner's watch, a runner's watch for multi sports such as a duathlon or a triathlon, an outdoor watch, and a satellite positioning system, for example, a GPS watch equipped with GPS.

  Also, although the above description has been made using the GPS (Global Positioning System) as a satellite positioning system, another Global Navigation Satellite System (GNSS) may be used. For example, one or two of satellite positioning systems such as EGNOS (European Geostationary Satellite Navigation Overlay Service), QZSS (Quasi Zenith Satellite System), GLONASS (GLO Bal NAvigation Satellite System), GALILEO, BeiDou (BeiDou Navigation Satellite System), etc. You may use the above. In addition, at least one of the satellite positioning systems may use a satellite based augmentation system (SBAS) such as Wide Area Augmentation System (WAAS) or European Geostationary Navigation Overlay Service (EGNOS). .

  Such a portable electronic device 800 has high performance because it includes the physical quantity sensor 1, 1 a having high detection sensitivity and the processing unit 801.

[Electronics]
Next, the electronic device 1000 according to the present embodiment will be described with reference to the drawings.
FIG. 14 is a functional block diagram of the electronic device 1000 according to the present embodiment.

  Electronic device 1000 includes physical quantity sensors 1 and 1a according to the present invention. Below, the case where the physical quantity sensor 1 which concerns on this invention is included is demonstrated.

  The electronic device 1000 further includes an arithmetic processing unit (CPU) 1020 as a control unit, an operation unit 1030, a read only memory (ROM) 1040, a random access memory (RAM) 1050, a communication unit 1060, and a display unit 1070. It is done. Note that the electronic device 1000 according to the present embodiment may have a configuration in which a part of the components (each part) in FIG. 14 is omitted or changed, or another component is added.

  The arithmetic processing unit 1020 is a control unit that performs various calculation processing and control processing based on the detection signal output from the physical quantity sensor 1 in accordance with a program stored in the ROM 1040 or the like. Specifically, the arithmetic processing unit 1020 controls the communication unit 1060 to perform various processes according to the detection signal of the physical quantity sensor 1 and the operation signal from the operation unit 1030, and data communication with the external device. A process of transmitting display signals for displaying various information on the display unit 1070 is performed.

  The operation unit 1030 is an input device configured by operation keys, button switches, and the like, and outputs an operation signal according to an operation by the user to the arithmetic processing unit 1020.

  The ROM 1040 stores programs, data and the like for the arithmetic processing unit 1020 to perform various kinds of calculation processing and control processing.

  The RAM 1050 is used as a work area of the arithmetic processing unit 1020, and programs and data read from the ROM 1040, data inputted from the physical quantity sensor 1, data inputted from the operation unit 1030, and the arithmetic processing unit 1020 according to various programs. Temporarily stores the executed calculation results.

  The communication unit 1060 performs various controls for establishing data communication between the arithmetic processing unit 1020 and an external device.

  The display unit 1070 is a display device configured by an LCD (Liquid Crystal Display) or the like, and displays various types of information based on a display signal input from the arithmetic processing unit 1020. The display unit 1070 may be provided with a touch panel functioning as the operation unit 1030.

  As such an electronic device 1000, various electronic devices can be considered. For example, personal computers (for example, mobile personal computers, laptop personal computers, tablet personal computers), mobile terminals such as smartphones and mobile phones, Digital still cameras, inkjet discharge devices (eg, inkjet printers), storage area network devices such as routers and switches, local area network devices, devices for mobile terminal base stations, televisions, video cameras, video recorders, car navigation devices, Real time clock device, pager, electronic notebook (including communication function included), electronic dictionary, calculator, electronic game device, game controller, word processorー, work station, videophone, TV monitor for crime prevention, electronic binoculars, POS terminal, medical equipment (eg electronic thermometer, sphygmomanometer, blood glucose meter, electrocardiogram measuring device, ultrasound diagnostic device, electronic endoscope), fish finder , Various measuring instruments, instruments (for example, instruments of vehicles, aircrafts, ships), flight simulators, head mounted displays, motion traces, motion tracking, motion controllers, PDR (pedestrian position and orientation measurement) and the like.

  FIG. 15 is a view showing an example of the appearance of a smartphone which is an example of the electronic device 1000. The smartphone as the electronic device 1000 includes a button as the operation unit 1030 and an LCD as the display unit 1070.

  FIG. 16 is a view showing an example of the appearance of a wrist-worn portable device (wearable device) which is an example of the electronic device 1000. The wearable device which is the electronic device 1000 includes an LCD as the display unit 1070. The display unit 1070 may be provided with a touch panel functioning as the operation unit 1030.

  In addition, a portable device which is the electronic device 1000 includes a position sensor such as a GPS receiver (GPS: Global Positioning System), for example, and can measure the movement distance and movement locus of the user.

  Such an electronic device 1000 has high performance because it includes the physical quantity sensor 1, 1 a having high detection sensitivity and the control unit.

[Mobile body]
Next, a mobile unit 1100 according to the present embodiment will be described with reference to the drawings.
FIG. 17 is a plan view schematically showing a car as the mobile body 1100 according to the present embodiment.

  The mobile unit 1100 according to the present embodiment includes the physical quantity sensors 1 and 1a according to the present invention. Hereinafter, a mobile unit 1100 including the physical quantity sensor 1 according to the present invention will be described.

  The moving body 1100 according to the present embodiment performs a controller 1120, a controller 1130, a controller 1140, and a battery 1150 that perform various controls such as an engine system, a brake system, and a keyless entry system based on detection signals output from the physical quantity sensor 1. , And a control unit such as a backup battery 1160. Note that the mobile unit 1100 according to the present embodiment may omit or change part of the components (each part) shown in FIG. 17 or may be configured to have other components added.

  As such a mobile body 1100, various mobile bodies can be considered, and examples thereof include an automobile (including an electric car), an aircraft such as a jet plane and a helicopter, a ship, a rocket, a satellite, and the like.

  Such a mobile unit 1100 has high performance because it includes the physical quantity sensor 1, 1 a having high detection sensitivity and the control unit.

  The above-mentioned embodiment and modification are an example, and are not necessarily limited to these. For example, it is also possible to combine each embodiment and each modification suitably.

  The present invention includes configurations substantially the same as the configurations described in the embodiments (for example, configurations having the same function, method and result, or configurations having the same purpose and effect). Further, the present invention includes a configuration in which a nonessential part of the configuration described in the embodiment is replaced. The present invention also includes configurations that can achieve the same effects as the configurations described in the embodiments or that can achieve the same purpose. Further, the present invention includes a configuration in which a known technology is added to the configuration described in the embodiment.

  1, 1a: physical quantity sensor, 2: support substrate, 3: sensor element, 5: cover member, 21: recess, 22, 23, 24: groove, 31, 32: fixed part, 33: movable part, 34, 35 Coupling part, 36, 37: Movable electrode part, 38, 39: Fixed electrode part, 41, 42, 43: Wiring, 44, 45, 46: Electrode, 50: Protrusion part, 51: Recess, 60: Groove, 70 ... Deposited film, 102: base substrate, 103: sensor substrate, 105: lid substrate, 341, 342, 351, 352: beam, 361 to 375: movable electrode, 381 to 398: fixed electrode, 471, 472, 481, 482, 491, 492, 493: projection, 600: inertia measurement unit, 800: portable electronic device, 1000: electronic device, 1100: moving body, M: mask, L, L1, L2: interval (width).

Claims (18)

Bonding the sensor substrate to the base substrate;
Patterning the sensor substrate to form a groove;
Forming a deposited film on at least the side surface of the groove using a vapor deposition method;
A method of manufacturing a physical quantity sensor, including: In claim 1,
The method of manufacturing a physical quantity sensor, wherein the deposited film is a semiconductor thin film. In claim 2,
The method for manufacturing a physical quantity sensor, wherein the semiconductor thin film is any one of a silicon thin film, a germanium thin film, and a silicon germanium thin film. In any one of claims 1 to 3,
The method of manufacturing a physical quantity sensor, wherein the groove is a through groove. In any one of claims 1 to 4,
The width of the groove is L1,
Assuming that the distance between the surfaces where the deposited films face each other is L2,
A method of manufacturing a physical quantity sensor, wherein L1> L2 is satisfied. In any one of claims 1 to 5,
The method for producing a physical quantity sensor, wherein the vapor phase growth method is a selective epitaxial growth method. In any one of claims 1 to 6,
In the step of forming the deposited film, the method for manufacturing a physical quantity sensor, wherein a processing temperature is 500 ° C. or more and 600 ° C. or less. In any one of claims 1 to 7,
The method for manufacturing a physical quantity sensor, wherein the groove in which the deposited film is formed constitutes any one of an acceleration sensor element, an angular velocity sensor element, and a combined element of an acceleration sensor element and an angular velocity sensor element. In any one of claims 1 to 8,
The base substrate is amorphous,
The method of manufacturing a physical quantity sensor, wherein the sensor substrate is a silicon substrate. A base substrate,
A sensor element disposed on the base substrate and including a fixed electrode and a movable electrode;
Including
The physical quantity sensor, wherein a deposited film is formed on the surface of each of the fixed electrode and the movable electrode adjacent to each other. In claim 10,
The physical quantity sensor, wherein the deposited film is a semiconductor thin film. In claim 11,
The physical quantity sensor, wherein the semiconductor thin film is any one of a silicon thin film, a germanium thin film, and a silicon germanium thin film. In any one of claims 10 to 12,
The distance between the faces adjacent to each other is L1,
Assuming that the distance between mutually facing surfaces of the deposited films formed on the respective surfaces is L2,
A physical quantity sensor that satisfies L1> L2. In any one of claims 10 to 13,
The physical quantity sensor, wherein the sensor element is any one of an acceleration sensor element, an angular velocity sensor element, and a composite element of an acceleration sensor element and an angular velocity sensor element. A physical quantity sensor according to any one of claims 10 to 14,
A control unit that controls the physical quantity sensor;
, An inertial measurement unit. A physical quantity sensor according to any one of claims 10 to 14,
A case containing the physical quantity sensor;
A processing unit housed in the case and processing output data from the physical quantity sensor;
A display unit housed in the case;
A translucent cover closing the opening of the case;
including,
Portable electronic devices. A physical quantity sensor according to any one of claims 10 to 14,
A control unit that performs control based on a detection signal output from the physical quantity sensor;
Equipped with an electronic device. A physical quantity sensor according to any one of claims 10 to 14,
A control unit that performs control based on a detection signal output from the physical quantity sensor;
Equipped with a mobile.

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