JP2019036732A - Mwir/lwir透明伝導性コーティング - Google Patents
Mwir/lwir透明伝導性コーティング Download PDFInfo
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- 238000000576 coating method Methods 0.000 title claims abstract description 74
- 239000011248 coating agent Substances 0.000 title claims abstract description 68
- 238000003384 imaging method Methods 0.000 claims abstract description 21
- 230000003287 optical effect Effects 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 38
- 230000005540 biological transmission Effects 0.000 claims description 17
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 7
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 7
- 238000000149 argon plasma sintering Methods 0.000 claims description 6
- 239000006117 anti-reflective coating Substances 0.000 claims description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000000995 aerosol-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 238000005118 spray pyrolysis Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
【解決手段】光学システム(10)は、ハウジング(12)と、ハウジング(12)内に収容された撮像デバイス(14)と、ハウジング(12)を撮像デバイス(14)まで通る光路を与えるハウジング(12)内のウィンドウ(100)とを含む。ウィンドウ(100)は透明基材(102)と透明基材(102)上のコーティング(104)とを含む。コーティング(104)は導電性半導体で形成されている。MWIR及び/またはLWIR波長のうちの少なくとも一方に対して、撮像デバイス(14)は高感度であり、コーティング(104)は透明である。
【選択図】図4
Description
Claims (21)
- 透明基材と、
前記透明基材上のコーティングであって、導電性半導体で形成され、MWIR及び/またはLWIR波長のうちの少なくとも一方に対して透明である前記コーティングと、
を含むウィンドウ。 - 前記コーティングはそのピーク透過がMWIR波長内にある請求項1に記載のウィンドウ。
- 前記透明基材には、サファイア、酸窒化アルミニウム(AlON)、及び/またはスピネルが含まれる請求項2に記載のウィンドウ。
- 前記コーティングはLWIR波長において透明である請求項1に記載のウィンドウ。
- 前記透明基材にはZnS及び/またはZnSeのうちの少なくとも一方が含まれる請求項4に記載のウィンドウ。
- 前記コーティングにはInAsが含まれる請求項1に記載のウィンドウ。
- 前記コーティングには、Te、S、Se、Si、及び/またはSnのうちの少なくとも1つがドープされる請求項1に記載のウィンドウ。
- 前記コーティングにはInGaAsが含まれる請求項1に記載のウィンドウ。
- 前記コーティングにはInAlAsが含まれる請求項1に記載のウィンドウ。
- 前記コーティングは、有機金属化学気相成長法(MOCVD)、蒸着、分子線エピタキシ(MBE)、化学スプレー熱分解、化学気相成長法(CVD)、及び/またはエアロゾルアシストCVDのうちの少なくとも1つによって、前記透明基材上のフィルムとして形成される請求項1に記載のウィンドウ。
- 前記コーティングは前記透明基材中にパターンで埋め込まれている請求項1に記載のウィンドウ。
- 前記パターンには格子が含まれる請求項11に記載のウィンドウ。
- 前記コーティングと基材とは、前記パターンを通る光散乱を軽減するように屈折率が厳密に一致している請求項11に記載のウィンドウ。
- 前記伝導性コーティングは前記透明基材上の透明コーティング中にパターンで埋め込まれている請求項1に記載のウィンドウ。
- 前記コーティングと透明なベースコーティングとは、前記パターンを通る光散乱を軽減するように屈折率が厳密に一致している請求項14に記載のウィンドウ。
- 前記コーティング上の反射防止コーティングをさらに含む請求項1に記載のウィンドウ。
- 前記コーティングはシート抵抗が200オーム/スクェア未満である請求項1に記載のウィンドウ。
- ハウジングと、
前記ハウジング内に収容された撮像デバイスと、
前記ハウジングを前記撮像デバイスまで通る光路を与える前記ハウジング内のウィンドウであって、
透明基材と、
前記透明基材上のコーティングであって、前記コーティングは導電性半導体で形成され、MWIR及び/またはLWIR波長のうちの少なくとも一方に対して、前記撮像デバイスは高感度であり、前記コーティングは透明である、前記コーティングと、を含む前記ウィンドウと、
を含む光学システム。 - 前記コーティングはそのピーク透過がMWIR波長内にあり、前記撮像デバイスはMWIR波長に対して高感度である請求項18に記載のシステム。
- 前記コーティングはLWIR波長において透明であり、前記撮像デバイスはLWIR波長に対して高感度である請求項18に記載のシステム。
- 光学システム用のウィンドウを製造する方法であって、
透明基材上にコーティングを形成することであって、前記コーティングは、MWIR及び/またはLWIR波長のうちの少なくとも一方に対して透明な導電性半導体フィルムである、形成すること、を含む前記方法。
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