JP2019028438A - Optical scan device, light reception device, and optical detection system - Google Patents

Abstract

To provide a novel device that enables scanning or reception by light.SOLUTION: An optical scan device according to an embodiment comprises: a first mirror; a second mirror that faces the first mirror; two non-waveguide regions that are located between the first and second mirrors; a light waveguide region that is located between the first and second mirrors and between the two non-waveguide regions; and a first adjustment element. The light waveguide region and each of the two non-waveguide regions include a region composed of a common material, and the light waveguide region or each of the two non-waveguide regions further include at least one member that has a refractive index different from that of the common material. The first mirror is configured to externally emit a part of light propagating inside the light waveguide region, and the first adjustment element is configured to change a direction of the light to be emitted by changing at least one of the refractive index of the light waveguide region and a thickness thereof.SELECTED DRAWING: Figure 68

Description

  The present disclosure relates to an optical scanning device, an optical receiving device, and an optical detection system.

  Conventionally, various devices that can scan a space with light have been proposed.

  Patent Document 1 discloses a configuration that can perform scanning with light using a driving device that rotates a mirror.

  Patent Document 2 discloses an optical phased array having a plurality of nanophotonic antenna elements arranged two-dimensionally. Each antenna element is optically coupled to a variable optical delay line (ie, a phase shifter). In this optical phased array, a coherent light beam is guided to each antenna element by a waveguide, and the phase of the light beam is shifted by a phase shifter. Thereby, it is disclosed that the amplitude distribution of the far-field radiation pattern can be changed.

  Patent Document 3 discloses an optical waveguide layer in which light is guided, a waveguide including a first distributed Bragg reflector formed on the upper surface and the lower surface of the optical waveguide layer, and light for entering the waveguide. An optical deflecting element is disclosed that includes a light incident port and a light exit port formed on the surface of the waveguide for emitting light incident from the light incident port and guided in the waveguide.

International Publication No. 2013/168266 JP-T-2006-508235 JP2013-16591A

  One embodiment of the present disclosure provides a novel optical scanning device that can realize scanning with light with a relatively simple configuration.

  An optical scanning device according to an aspect of the present disclosure includes a first mirror having optical transparency, a second mirror facing the first mirror, and the first and second mirrors, Two non-waveguide regions arranged with a gap in a first direction parallel to at least one reflecting surface of the first and second mirrors, and between the first and second mirrors and between the two non-waveguide regions Located between the waveguide regions, having an average refractive index higher than the average refractive index of the non-waveguide region, parallel to the at least one reflecting surface of the first and second mirrors, and the first An optical waveguide region that propagates light along a second direction perpendicular to the first direction, and a first adjustment element that changes at least one of a refractive index and a thickness of the optical waveguide region. Each of the optical waveguide region and the two non-waveguide regions includes a region constituted by a common material, and each of the optical waveguide region or the two non-waveguide regions is different from the common material. It further includes at least one member having a refractive index, wherein the first mirror has a higher light transmittance than the second mirror, and a part of the light propagating in the optical waveguide region is The light is emitted from the optical waveguide region in a third direction intersecting a virtual plane parallel to the first and second directions, and the first adjustment element has at least a refractive index and a thickness of the optical waveguide region. Changing the one changes the third direction of the light emitted from the optical waveguide region.

  An optical receiving device according to an aspect of the present disclosure includes: a first mirror having optical transparency; a second mirror facing the first mirror; and the first and second mirrors, Two non-waveguide regions arranged with a gap in a first direction parallel to at least one reflecting surface of the first and second mirrors, and between the first and second mirrors and between the two non-waveguide regions Located between the waveguide regions, having an average refractive index higher than the average refractive index of the non-waveguide region, parallel to the at least one reflecting surface of the first and second mirrors, and the first An optical waveguide region that propagates light along a second direction perpendicular to the first direction, and a first adjustment element that changes at least one of a refractive index and a thickness of the optical waveguide region. Each of the optical waveguide region and the two non-waveguide regions includes a region constituted by a common material, and each of the optical waveguide region or the two non-waveguide regions is different from the common material. The optical system further includes at least one member having a refractive index, wherein the first mirror has a higher light transmittance than the second mirror, and the optical waveguide region is parallel to the first and second directions. The light incident on the optical waveguide region from the third direction intersecting the virtual plane through the first mirror is propagated in the second direction, and the first adjustment element is By changing at least one of the refractive index and the thickness, the direction of light that can be received is changed.

  The comprehensive or specific aspect may be realized by a device, a system, a method, an integrated circuit, a computer program, a recording medium, or any combination thereof.

  According to one aspect of the present disclosure, one-dimensional scanning or two-dimensional scanning with light can be realized with a relatively simple configuration.

FIG. 1 is a perspective view schematically illustrating a configuration of an optical scanning device according to an exemplary embodiment of the present disclosure. FIG. 2 is a diagram schematically showing an example of the cross-sectional structure of one waveguide element and propagating light. FIG. 3 is a diagram schematically illustrating a calculation model used in the simulation. FIG. 4A shows the result of calculating the relationship between the refractive index and the light emission angle in an example of the optical waveguide layer. FIG. 4B shows the result of calculating the relationship between the refractive index and the light emission angle in another example of the optical waveguide layer. FIG. 5 is a diagram schematically illustrating an example of an optical scanning device. FIG. 6A is a cross-sectional view schematically illustrating an example of a configuration in which light is input to the waveguide element. FIG. 6B is a cross-sectional view schematically illustrating another example of the configuration. FIG. 7 is a graph showing a change in coupling efficiency when the refractive index of the waveguide is changed. FIG. 8 is a diagram schematically showing connections between a plurality of first waveguides and a plurality of second waveguides. FIG. 9 is a cross-sectional view of a waveguide element schematically showing a configuration example in which spacers are arranged on both sides of the optical waveguide layer. FIG. 10 is a cross-sectional view of an optical scanning device schematically showing a configuration example of a waveguide array. FIG. 11 is a diagram schematically illustrating propagation of guided light in the optical waveguide layer. FIG. 12 is a cross-sectional view schematically showing a part of the structure of the optical scanning device in the exemplary embodiment of the present disclosure. FIG. 13 is a cross-sectional view schematically showing another example of the structure of the optical scanning device. FIG. 14 is a cross-sectional view schematically showing still another example of the structure of the optical scanning device. FIG. 15 shows an example of light incident on the optical waveguide layer 2 sandwiched between two multilayer reflective films. FIG. 16A shows an example in which light is introduced into the first waveguide via the grating. FIG. 16B shows an example in which light is input from the end face of the first waveguide. FIG. 16C shows an example in which light is input from the laser light source to the first waveguide. FIG. 17 shows the d ₂ dependence of the coupling efficiency of guided light from the first waveguide to the second waveguide. FIG. 18 shows the d ₂ dependence of the coupling efficiency in another example. FIG. 19 is a diagram in which the coupling efficiency is classified into 0.5 or more and the coupling efficiency is less than 0.5. FIG. 20 is a diagram showing a configuration in which the center in the thickness direction of the optical waveguide layer in the first waveguide is shifted from the center in the thickness direction of the optical waveguide layer in the second waveguide. FIG. 21 is a diagram illustrating the Δz dependency of the coupling efficiency of light from the first waveguide to the second waveguide. FIG. 22A shows the d ₂ dependence of the coupling efficiency in yet another example. FIG. 22B shows the d ₂ dependency of the coupling efficiency in still another example. FIG. 23A is a diagram showing a calculation model. FIG. 23B is a diagram illustrating a calculation result indicating light propagation. FIG. 24A is a cross-sectional view showing an optical scanning device in another embodiment. FIG. 24B is a diagram illustrating a calculation result of gap width dependency of coupling efficiency. FIG. 25A is a diagram illustrating a cross section of a waveguide array that emits light in a direction perpendicular to the exit surface of the waveguide array. FIG. 25B is a diagram illustrating a cross section of the waveguide array that emits light in a direction different from the direction perpendicular to the emission surface of the waveguide array. FIG. 26 is a perspective view schematically showing a waveguide array in a three-dimensional space. FIG. 27A is a schematic diagram showing how diffracted light is emitted from the waveguide array when p is larger than λ. FIG. 27B is a schematic diagram showing a state in which diffracted light is emitted from the waveguide array when p is smaller than λ. FIG. 27C is a schematic diagram illustrating how diffracted light is emitted from the waveguide array when p is substantially equal to λ / 2. FIG. 28 is a schematic diagram illustrating an example of a configuration in which the phase shifter is directly connected to the waveguide element. FIG. 29 is a schematic view of the waveguide array and the phase shifter array as viewed from the normal direction of the light exit surface. FIG. 30 is a diagram schematically illustrating an example of a configuration in which the waveguide in the phase shifter is connected to the optical waveguide layer in the waveguide element via another waveguide. FIG. 31 is a diagram illustrating a configuration example in which a plurality of phase shifters arranged in cascade in the optical splitter are inserted. FIG. 32A is a perspective view schematically showing an example of the configuration of the first adjustment element. FIG. 32B is a perspective view schematically showing another configuration example of the first adjustment element. FIG. 32C is a perspective view schematically showing still another configuration example of the first adjustment element. FIG. 33 is a diagram illustrating an example of a configuration in which an adjustment element including a heater and a waveguide element are combined. FIG. 34 is a diagram illustrating a configuration example in which a mirror is held by a support member. FIG. 35 is a diagram illustrating an example of a configuration for moving a mirror. FIG. 36 is a diagram showing a configuration example in which electrodes are arranged at positions that do not hinder light propagation. FIG. 37 is a diagram illustrating an example of a piezoelectric element. FIG. 38A is a diagram illustrating a configuration example of a support member having a unimorph structure. FIG. 38B is a diagram illustrating an example of a state in which the support member is deformed. FIG. 39A is a diagram illustrating a configuration example of a support member having a bimorph structure. FIG. 39B is a diagram illustrating an example of a state in which the support member is deformed. FIG. 40 is a diagram illustrating an example of an actuator. FIG. 41A is a diagram for explaining the inclination of the tip of the support member. FIG. 41B is a diagram illustrating an example in which two unimorph-type support members having different extending and contracting directions are connected in series. FIG. 42 is a diagram illustrating an example of a configuration in which a support member that holds a plurality of first mirrors is collectively driven by an actuator. FIG. 43 is a diagram illustrating a configuration example in which the first mirror in the plurality of waveguide elements is a single plate-shaped mirror. FIG. 44 is a diagram illustrating an example of a configuration in which wiring is commonly extracted from the electrodes of the respective waveguide elements. FIG. 45 is a diagram illustrating an example of a configuration in which some electrodes and wirings are shared. FIG. 46 is a diagram showing an example of a configuration in which common electrodes are arranged for a plurality of waveguide elements. FIG. 47 is a diagram schematically showing an example of a configuration in which a large area for arranging the phase shifter array is secured and the waveguide array is integrated small. FIG. 48 is a diagram illustrating a configuration example in which two phase shifter arrays are arranged on both sides of the waveguide array. FIG. 49A shows a configuration example of a waveguide array in which the arrangement direction of the waveguide elements and the direction in which the waveguide elements extend are not orthogonal to each other. FIG. 49B shows a configuration example of a waveguide array in which the arrangement interval of the waveguide elements is not constant. FIG. 50A is a diagram schematically illustrating an optical scanning device according to the present embodiment. 50B is a cross-sectional view of the optical scanning device shown in FIG. 50A. FIG. 50C is another cross-sectional view of the optical scanning device shown in FIG. 50A. FIG. 51A is a diagram illustrating a configuration example in which a dielectric layer is disposed between the second mirror and the waveguide. FIG. 51B is a diagram illustrating a configuration example in which a second dielectric layer is further disposed on the first waveguide. FIG. 52 is a diagram illustrating a configuration example in which the second mirror is not disposed in the region between the first waveguide and the substrate. FIG. 53 is a diagram illustrating a configuration example in which the second mirror is thin between the first waveguide and the substrate. FIG. 54A is a diagram illustrating a configuration example in which the thickness of the second mirror changes stepwise. FIG. 54B shows a configuration example in which the upper electrode, the first mirror, and the second substrate are disposed over the protective layer of the first waveguide and the optical waveguide layer of the second waveguide. FIG. 54C is a diagram showing a part of the manufacturing process of the configuration example of FIG. 54B. FIG. 55 is a diagram showing a cross section of a plurality of second waveguides. FIG. 56 is a diagram illustrating a configuration example in which the first waveguide and the second waveguide are reflective waveguides. FIG. 57 is a diagram illustrating a configuration example in which the upper electrode is disposed on the first mirror and the lower electrode is disposed below the second mirror. FIG. 58 is a diagram illustrating an example in which the first waveguide is separated into two parts. FIG. 59 is a diagram illustrating a configuration example in which an electrode is disposed between each optical waveguide layer and an optical waveguide layer adjacent to each optical waveguide layer. FIG. 60 is a diagram illustrating a configuration example in which the first mirror is thick and the second mirror is thin. FIG. 61 is a cross-sectional view of the optical scanning device in the present embodiment. Figure 62 is a diagram showing the relationship between the percentage and y ₁ of the optical loss. FIG. 63 is a cross-sectional view of an optical scanning device schematically showing another configuration example of the waveguide array in the present embodiment. 64A is a diagram showing a calculation result of the electric field intensity distribution in the configuration example of FIG. FIG. 64B is a diagram showing a calculation result of the electric field intensity distribution in the configuration example of FIG. FIG. 65 is a cross-sectional view of an optical scanning device schematically showing a configuration example in which spacers having different refractive indexes exist in the present embodiment. FIG. 66 is a cross-sectional view of an optical scanning device schematically showing a configuration example of a waveguide element in a modification of the present embodiment. FIG. 67 is a diagram showing the relationship between the width of the optical waveguide region and the spread of the electric field. FIG. 68 is a cross-sectional view of an optical scanning device schematically showing a configuration example of an optical waveguide region and a non-waveguide region in the present embodiment. FIG. 69A is a diagram illustrating a calculation result of the electric field distribution in the waveguide mode. FIG. 69B is a diagram illustrating a calculation result of the electric field distribution in the waveguide mode. FIG. 70 is a diagram showing the relationship between the ratio of the member dimensions and the spread of the electric field. FIG. 71 is a diagram showing the relationship between the ratio of the dimension of the member to the distance between the mirrors and the extinction coefficient of the waveguide mode in the example of FIG. FIG. 72 is a diagram showing the relationship between the ratio of the member dimensions and the spread of the electric field. FIG. 73 is a cross-sectional view of an optical scanning device schematically showing a configuration example of an optical waveguide region and a non-waveguide region in a modification of the present embodiment. FIG. 74 is a diagram showing the relationship between the ratio of member dimensions and the electric field spread in the example of FIG. FIG. 75A is a cross-sectional view of an optical scanning device schematically showing a configuration example in which a member that is a step is provided on a part of the reflection surface of the second mirror. FIG. 75B is a cross-sectional view of an optical scanning device schematically showing another configuration example in which a stepped member is provided on a part of the reflection surface of the second mirror. FIG. 76 is a cross-sectional view of an optical scanning device schematically showing a configuration example in which two members are separated from each other on the first mirror side. FIG. 77 is a cross-sectional view of an optical scanning device that schematically shows a configuration example in which two members are arranged separately on both sides of the first and second mirrors. FIG. 78 is a cross-sectional view of an optical scanning device schematically showing a configuration example in which two members are arranged apart from each other on the first mirror side and other members are arranged on the second mirror side. FIG. 79 is a cross-sectional view of an optical scanning device schematically showing a configuration example in which two members are separated from each other on the second mirror side. FIG. 80 is a cross-sectional view of an optical scanning device showing a configuration example in which members are arranged on both sides of the first and second mirrors. FIG. 81A is a cross-sectional view including the optical waveguide region of the configuration example shown in FIG. FIG. 81B is a cross-sectional view including the non-waveguide region of the configuration example shown in FIG. FIG. 82 is a diagram illustrating a configuration example of an optical scanning device in which elements such as an optical branching device, a waveguide array, a phase shifter array, and a light source are integrated on a circuit board. FIG. 83 is a schematic diagram showing a state in which a two-dimensional scan is executed by irradiating a light beam such as a laser far away from the optical scanning device. FIG. 84 is a block diagram illustrating a configuration example of a LiDAR system capable of generating a ranging image. FIG. 85 is a diagram showing a schematic configuration of a total reflection waveguide. FIG. 86 is a diagram showing the electric field intensity distribution of the total reflection waveguide. FIG. 87 is a diagram showing a schematic configuration of a slow light waveguide. FIG. 88 is a diagram showing the electric field intensity distribution of the slow light waveguide.

  Prior to describing the embodiments of the present disclosure, the knowledge underlying the present disclosure will be described.

  The present inventors have found that the conventional optical scanning device has a problem that it is difficult to scan a space with light without complicating the configuration of the apparatus.

  For example, the technique disclosed in Patent Document 1 requires a drive device that rotates a mirror. For this reason, the structure of an apparatus becomes complicated and there exists a subject that it is not robust with respect to a vibration.

  In the optical phased array described in Patent Document 2, it is necessary to branch light and introduce it into a plurality of column waveguides and a plurality of row waveguides, and to guide the light to a plurality of antenna elements arranged two-dimensionally. . For this reason, the wiring of the waveguide for guiding light becomes very complicated. In addition, the range of the two-dimensional scan cannot be increased. Furthermore, in order to change the amplitude distribution of the emitted light in the far field two-dimensionally, a phase shifter is connected to each of a plurality of two-dimensionally arranged antenna elements, and a phase control wiring is connected to the phase shifter. It is necessary to install. Thereby, the phase of the light incident on the plurality of antenna elements arranged two-dimensionally is changed by different amounts. For this reason, the structure of an element becomes very complicated.

  According to the configuration of Patent Document 3, a large one-dimensional scan can be performed by the emitted light by changing the wavelength of light incident on the optical deflection element. However, a mechanism for changing the wavelength of light incident on the light polarizing element is necessary. When such a mechanism is incorporated in a light source such as a laser, there is a problem that the structure of the light source becomes complicated.

  The present inventors paid attention to the above-mentioned problems in the prior art, and studied a configuration for solving these problems. The present inventors have found that the above-described problem can be solved by using a waveguide element having a pair of opposing mirrors and an optical waveguide layer sandwiched between the mirrors. One of the pair of mirrors in the waveguide element has a higher light transmittance than the other, and emits part of the light propagating through the optical waveguide layer to the outside. The direction (or emission angle) of the emitted light can be changed by adjusting the refractive index and / or thickness of the optical waveguide layer, as will be described later. More specifically, the component in the direction along the longitudinal direction of the optical waveguide layer of the wave vector of the emitted light can be changed by changing the refractive index and / or the thickness. Thereby, a one-dimensional scan is realized.

  Further, when an array of a plurality of waveguide elements is used, a two-dimensional scan can be realized. More specifically, it is possible to change the direction in which the light emitted from the plurality of waveguide elements is strengthened by giving an appropriate phase difference to the light supplied to the plurality of waveguide elements and adjusting the phase difference. it can. Due to the change in the phase difference, the component of the wave number vector of the emitted light in the direction intersecting the direction along the longitudinal direction of the optical waveguide layer changes. Thereby, a two-dimensional scan can be realized. Even when two-dimensional scanning is performed, it is not necessary to change at least one of the refractive index and thickness of the plurality of optical waveguide layers by different amounts. That is, by giving an appropriate phase difference to the light supplied to the plurality of optical waveguide layers, and changing at least one of the refractive index and the thickness of the plurality of optical waveguide layers synchronously by the same amount, two-dimensional A scan can be performed. As described above, according to the embodiment of the present disclosure, two-dimensional scanning with light can be realized with a relatively simple configuration.

  The above basic principle can be applied not only to the use of emitting light but also to the use of receiving optical signals. By changing at least one of the refractive index and the thickness of the optical waveguide layer, the direction of light that can be received can be changed one-dimensionally. Furthermore, if the phase difference of light is changed by a plurality of phase shifters respectively connected to a plurality of waveguide elements arranged in one direction, the direction of light that can be received can be changed two-dimensionally.

  An optical scanning device and an optical receiving device according to an embodiment of the present disclosure may be used as an antenna in, for example, a LiDAR (Light Detection and Ranging) system. Since the LiDAR system uses short-wave electromagnetic waves (visible light, infrared light, or ultraviolet light) as compared with a radar system using radio waves such as millimeter waves, the distance distribution of an object can be detected with high resolution. Such a LiDAR system is mounted on a mobile body such as an automobile, UAV (Unmanned Aerial Vehicle, so-called drone), and AGV (Automated Guided Vehicle), and can be used as one of collision avoidance techniques.

<Configuration example of optical scanning device>
Hereinafter, as an example, the configuration of an optical scanning device that performs two-dimensional scanning will be described.

  FIG. 1 is a perspective view schematically illustrating a configuration of an optical scanning device 100 according to an exemplary embodiment of the present disclosure. The optical scanning device 100 includes a waveguide array including a plurality of waveguide elements 10 regularly arranged in a first direction (Y direction in FIG. 1). Each of the plurality of waveguide elements 10 has a shape extending in a second direction (X direction in FIG. 1) intersecting the first direction. The plurality of waveguide elements 10 emit light in a third direction D3 that intersects a virtual plane parallel to the first and second directions while propagating light in the second direction. In the present embodiment, the first direction (Y direction) and the second direction (X direction) are orthogonal to each other, but they may not be orthogonal to each other. In the present embodiment, the plurality of waveguide elements 10 are arranged at equal intervals in the Y direction, but are not necessarily arranged at equal intervals.

  Note that the orientation of the structure shown in the drawings of the present application is set in consideration of the ease of explanation, and does not limit the orientation when the embodiment of the present disclosure is actually implemented. Further, the shape and size of the whole or a part of the structure shown in the drawings do not limit the actual shape and size.

  Each of the plurality of waveguide elements 10 includes a first mirror 30 and a second mirror 40 (hereinafter sometimes simply referred to as mirrors) facing each other, and an optical waveguide layer positioned between the mirror 30 and the mirror 40. 20. Each of the mirrors 30 and 40 has a reflection surface intersecting with the third direction D3 at the interface with the optical waveguide layer 20. The mirrors 30 and 40 and the optical waveguide layer 20 have a shape extending in the second direction (X direction).

  As will be described later, the plurality of first mirrors 30 of the plurality of waveguide elements 10 may be a plurality of portions of a third mirror that are integrally formed. Further, the plurality of second mirrors 40 of the plurality of waveguide elements 10 may be a plurality of portions of a fourth mirror that are integrally formed. Further, the plurality of optical waveguide layers 20 of the plurality of waveguide elements 10 may be a plurality of portions of the optical waveguide layer configured integrally. At least (1) each first mirror 30 is configured separately from the other first mirror 30, or (2) each second mirror 40 is configured separately from the other second mirror 40. (3) Since each optical waveguide layer 20 is configured separately from the other optical waveguide layers 20, a plurality of waveguides can be formed. “Constructed separately” includes not only physically providing a space but also sandwiching and separating materials having different refractive indexes between them.

  The reflective surface of the first mirror 30 and the reflective surface of the second mirror 40 face each other substantially in parallel. Of the two mirrors 30 and 40, at least the first mirror 30 has a characteristic of transmitting a part of the light propagating through the optical waveguide layer 20. In other words, the first mirror 30 has a higher light transmittance than the second mirror 40 for the light. For this reason, part of the light propagating through the optical waveguide layer 20 is emitted from the first mirror 30 to the outside. Such mirrors 30 and 40 may be multilayer mirrors formed of, for example, a multilayer film made of a dielectric (sometimes referred to as a “multilayer reflective film”).

  By controlling the phase of light input to each waveguide element 10 and further changing at least one of the refractive index and the thickness of the optical waveguide layer 20 in these waveguide elements 10 synchronously and simultaneously, Two-dimensional scanning can be realized.

  In order to realize such a two-dimensional scan, the present inventors have analyzed in detail the operation principle of the waveguide element 10. Based on the result, the two-dimensional scan by light was succeeded by driving the plurality of waveguide elements 10 synchronously.

  As shown in FIG. 1, when light is input to each waveguide element 10, the light is emitted from the emission surface of each waveguide element 10. The emission surface is located on the opposite side of the reflection surface of the first mirror 30. The direction D3 of the emitted light depends on the refractive index, thickness, and light wavelength of the optical waveguide layer. In the present embodiment, at least one of the refractive index and the thickness of each optical waveguide layer is controlled synchronously so that the light emitted from each waveguide element 10 is substantially in the same direction. Thereby, the component in the X direction of the wave number vector of the light emitted from the plurality of waveguide elements 10 can be changed. In other words, the direction D3 of the emitted light can be changed along the direction 101 shown in FIG.

  Furthermore, since the lights emitted from the plurality of waveguide elements 10 are directed in the same direction, the emitted lights interfere with each other. By controlling the phase of the light emitted from each waveguide element 10, the direction in which the light is strengthened by interference can be changed. For example, when a plurality of waveguide elements 10 having the same size are arranged at equal intervals in the Y direction, light having different phases by a certain amount is input to the plurality of waveguide elements 10. By changing the phase difference, the Y-direction component of the wave number vector of the emitted light can be changed. In other words, by changing the phase difference of the light introduced into the plurality of waveguide elements 10, the direction D3 in which the emitted light is strengthened by interference can be changed along the direction 102 shown in FIG. . Thereby, two-dimensional scanning with light can be realized.

  Hereinafter, the operation principle of the optical scanning device 100 will be described in more detail.

<Operation principle of waveguide element>
FIG. 2 is a diagram schematically illustrating a cross-sectional structure of one waveguide element 10 and an example of propagating light. In FIG. 2, a cross section parallel to the XZ plane of the waveguide element 10 is schematically shown with the direction perpendicular to the X direction and the Y direction shown in FIG. In the waveguide element 10, a pair of mirrors 30 and 40 are arranged so as to sandwich the optical waveguide layer 20. Light 22 introduced from one end in the X direction of the optical waveguide layer 20 is provided with a first mirror 30 and a lower surface (lower surface in FIG. 2) provided on the upper surface (upper surface in FIG. 2) of the optical waveguide layer 20. ) Propagates in the optical waveguide layer 20 while being repeatedly reflected. The light transmittance of the first mirror 30 is higher than the light transmittance of the second mirror 40. For this reason, a part of light can be mainly output from the first mirror 30.

  In a waveguide such as an ordinary optical fiber, light propagates along the waveguide while repeating total reflection. On the other hand, in the waveguide element 10 in the present embodiment, light propagates while being repeatedly reflected by the mirrors 30 and 40 disposed above and below the optical waveguide layer 20. For this reason, there is no restriction on the light propagation angle (that is, the incident angle at the interface between the mirror 30 or 40 and the optical waveguide layer 20), and the light incident on the mirror 30 or 40 at an angle closer to the perpendicular is also present. Can propagate. That is, light incident on the interface can be propagated at an angle smaller than the critical angle of total reflection (that is, an angle closer to vertical). For this reason, the group velocity of light in the light propagation direction is greatly reduced compared to the speed of light in free space. As a result, the waveguide element 10 has a property that the light propagation conditions greatly change with respect to changes in the wavelength of light, the thickness of the optical waveguide layer 20, and the refractive index of the optical waveguide layer 20.

The propagation of light in the waveguide element 10 will be described in more detail. The refractive index of the optical waveguide layer 20 is n _w , and the thickness of the optical waveguide layer 20 is d. Here, the thickness d of the optical waveguide layer 20 is the size of the optical waveguide layer 20 in the normal direction of the reflection surface of the mirror 30 or 40. Considering the interference condition of light, propagation angle theta _w of light of wavelength λ satisfies the following equation (1).

m is the mode order. Expression (1) corresponds to the condition that the light in the optical waveguide layer 20 forms a standing wave in the thickness direction. When the wavelength lambda _g of the optical waveguide layer 20 is lambda / _{n w,} wavelength lambda _g in the thickness direction of the optical waveguide layer 20 _'may be considered to be _{λ / (n w cosθ w)} . When the thickness d of the optical waveguide layer 20 is equal to an integral multiple of half of the wavelength λ _{g ′} in the thickness direction of the optical waveguide layer 20 λ / (2n _w cos θ _w ), a standing wave is formed. Equation (1) is obtained from this condition. In addition, m in Formula (1) represents the number of anti-nodes of a standing wave.

When the mirrors 30 and 40 are multilayer mirrors, light also enters the inside of the mirror during reflection. For this reason, strictly speaking, it is necessary to add a term corresponding to the optical path length corresponding to the amount of light intrusion to the left side of Equation (1). However, since the influence of the refractive index _nw and the thickness d of the optical waveguide layer 20 is much larger than the influence of the light intrusion into the mirror, the basic operation can be explained by the equation (1).

The emission angle θ when light propagating in the optical waveguide layer 20 is emitted to the outside (typically air) through the first mirror 30 is expressed by the following equation (2) according to Snell's law. Can be described.

In the expression (2), the wavelength λ / sin θ in the plane direction of light on the air side is equal to the wavelength λ / (n _w sin θ _w ) in the propagation direction of light on the waveguide element 10 side on the light exit surface. Obtained from conditions.

From the equations (1) and (2), the emission angle θ can be described as the following equation (3).

As can be seen from the equation (3), the light emission direction can be changed by changing any one of the light wavelength λ, the refractive index n _{w of} the optical waveguide layer 20, or the thickness d of the optical waveguide layer 20.

For example, when n _w = 2, d = 387 nm, λ = 1550 nm, and m = 1, the emission angle is 0 °. From this state, when the refractive index is changed to n _w = 2.2, the emission angle changes to about 66 °. On the other hand, when the thickness is changed to d = 420 nm without changing the refractive index, the emission angle changes to about 51 °. If the wavelength is changed to λ = 1500 nm without changing the refractive index and thickness, the emission angle changes to about 30 °. Thus, by changing any of the wavelength λ of light, the refractive index n _{w of} the optical waveguide layer 20, or the thickness d of the optical waveguide layer 20, the light emission direction can be greatly changed.

  Using this principle, it is conceivable to control the light emission direction by providing wavelength variable means for changing the wavelength of light propagating in the optical waveguide layer 20. However, when the wavelength variable means is incorporated in a light source such as a laser, the configuration of the light source becomes complicated.

Therefore, the optical scanning device 100 in the present embodiment controls the light emission direction by controlling one or both of the refractive index _nw and the thickness d of the optical waveguide layer 20. In this embodiment, the wavelength λ of light does not change during operation and is kept constant. The wavelength λ is not particularly limited. For example, the wavelength λ is a wavelength range of 400 nm to 1100 nm (visible light to near infrared light) where high detection sensitivity can be obtained with a photodetector or image sensor that detects light by absorbing light with general silicon (Si). Can be included. In another example, the wavelength λ may be included in the near infrared light wavelength region of 1260 nm to 1625 nm with relatively small transmission loss in the optical fiber or the Si waveguide. Note that these wavelength ranges are examples. The wavelength range of the light used is not limited to the wavelength range of visible light or infrared light, and may be, for example, the wavelength range of ultraviolet light. In this embodiment, the wavelength is not controlled, but in addition to the control of the refractive index and / or the thickness, the control of changing the wavelength may be performed.

  The present inventors have verified by optical analysis whether light can be emitted in a specific direction as described above. The optical analysis was performed by calculation using DiffractMOD of Cybernet. This is a simulation based on rigorous coupled wave analysis (RCWA), and can accurately calculate the effect of wave optics.

  FIG. 3 is a diagram schematically showing a calculation model used in this simulation. In this calculation model, the second mirror 40, the optical waveguide layer 20, and the first mirror 30 are stacked in this order on the substrate 50. Both the first mirror 30 and the second mirror 40 are multilayer mirrors including a dielectric multilayer film. The second mirror 40 has a structure in which a low refractive index layer 42 having a relatively low refractive index and a high refractive index layer 44 having a relatively high refractive index are alternately stacked in six layers (12 layers in total). The first mirror 30 has a structure in which a low refractive index layer 42 and a high refractive index layer 44 are alternately stacked in two layers (that is, a total of four layers). The optical waveguide layer 20 is disposed between the mirror 30 and the mirror 40. The medium other than the waveguide element 10 and the substrate 50 is air.

  Using this model, the optical response to incident light was examined while changing the incident angle of light. This corresponds to examining how much the incident light from the air and the optical waveguide layer 20 are coupled. Under the condition that the incident light is combined with the optical waveguide layer 20, the reverse process in which the light propagated through the optical waveguide layer 20 is emitted to the outside also occurs. Therefore, obtaining the incident angle when the incident light is combined with the optical waveguide layer 20 corresponds to obtaining the emission angle when the light propagated through the optical waveguide layer 20 is emitted to the outside. When incident light is combined with the optical waveguide layer 20, loss due to light absorption and scattering occurs in the optical waveguide layer 20. That is, under conditions where a large loss occurs, incident light is strongly coupled to the optical waveguide layer 20. If there is no loss of light due to absorption or the like, the sum of the light transmittance and the reflectance is 1, but if there is a loss, the sum of the transmittance and the reflectance is less than 1. In this calculation, in order to incorporate the effect of light absorption, an imaginary part is introduced into the refractive index of the optical waveguide layer 20, and a value obtained by subtracting the sum of transmittance and reflectance from 1 is calculated as the magnitude of loss.

In this simulation, it is assumed that the substrate 50 is Si, the low refractive index layer 42 is SiO ₂ (thickness 267 nm), and the high refractive index layer 44 is Si (thickness 108 nm). The magnitude of loss when light having a wavelength λ = 1.55 μm was incident at various angles was calculated.

Figure 4A shows the results of the thickness d of the optical waveguide layer 20 has calculated the relationship between the refractive index n _w of the optical waveguide layer 20, and the exit angle θ of the mode number m = 1 of light in the case of 704nm . The white line indicates that the loss is large. As shown in FIG. 4A, the emission angle of light of mode order m = 1 is θ = 0 ° near n _w = 2.2. An example of a material having a refractive index close to n _w = 2.2 is lithium niobate.

Figure 4B shows the results of the thickness d of the optical waveguide layer 20 has calculated the relationship between the refractive index n _w of the optical waveguide layer 20, and the exit angle θ of the mode number m = 1 of light in the case of 446nm . As shown in FIG. 4B, the exit angle of light of mode order m = 1 is θ = 0 ° in the vicinity of n _w = 3.45. An example of the substance having a refractive index close to n _w = 3.45 includes silicon (Si).

Thus, by adjusting the thickness d of the optical waveguide layer 20, with respect to the refractive index n _w of the particular optical waveguide layer 20, the emitting angle θ of light of a particular mode number (e.g. m = 1) It can be designed to be 0 °.

  As shown in FIG. 4A and FIG. 4B, it was confirmed that the emission angle θ changes greatly according to the change in the refractive index. As will be described later, the refractive index can be changed by various methods such as carrier injection, electro-optic effect, and thermo-optic effect. The change of the refractive index by such a method is not so large as about 0.1. For this reason, it has been thought that the emission angle does not change so much with such a small change in refractive index. However, as shown in FIGS. 4A and 4B, in the vicinity of the refractive index where the emission angle becomes θ = 0 °, the emission angle θ may change from 0 ° to about 30 ° when the refractive index increases by 0.1. all right. As described above, in the waveguide element 10 according to the present embodiment, it is possible to largely adjust the emission angle even if the refractive index change is small.

  Similarly, as can be seen from the comparison between FIG. 4A and FIG. 4B, it has been confirmed that the emission angle θ varies greatly according to the change in the thickness d of the optical waveguide layer 20. As will be described later, the thickness d can be changed by an actuator connected to at least one of the two mirrors, for example. Even if the change of the thickness d is small, the emission angle can be adjusted to be large.

Thus, by changing the refractive index _nw and / or the thickness d of the optical waveguide layer 20, the direction of the light emitted from the waveguide element 10 can be changed. In order to realize this, the optical scanning device 100 in the present embodiment includes a first adjustment element that changes at least one of the refractive index and the thickness of the optical waveguide layer 20 in each waveguide element 10. A configuration example of the first adjustment element will be described later.

As described above, when the waveguide element 10 is used, the light emission direction can be greatly changed by changing at least one of the refractive index _nw and the thickness d of the optical waveguide layer 20. Thereby, the emission angle of the light emitted from the mirror 30 can be changed in the direction along the waveguide element 10. By using at least one waveguide element 10, such a one-dimensional scan can be realized.

  FIG. 5 is a diagram schematically illustrating an example of an optical scanning device 100 that realizes a one-dimensional scan with a single waveguide element 10. In this example, a beam spot having a spread in the Y direction is formed. By changing the refractive index of the optical waveguide layer 20, the beam spot can be moved along the X direction. Thereby, a one-dimensional scan is realized. Since the beam spot has a spread in the Y direction, even a uniaxial scan can scan a relatively wide area that spreads two-dimensionally. For applications that do not require two-dimensional scanning, a configuration as shown in FIG. 5 may be employed.

  When two-dimensional scanning is realized, a waveguide array in which a plurality of waveguide elements 10 are arranged is used as shown in FIG. When the phase of light propagating through the plurality of waveguide elements 10 satisfies a specific condition, the light is emitted in a specific direction. When the phase condition changes, the light emission direction also changes in the arrangement direction of the waveguide array. That is, two-dimensional scanning can be realized by using the waveguide array. An example of a more specific configuration for realizing the two-dimensional scan will be described later.

  As described above, by using at least one waveguide element 10 and changing at least one of the refractive index and the thickness of the optical waveguide layer 20 in the waveguide element 10, the light emission direction can be changed. . However, there is room for improvement in the configuration for efficiently introducing light into the waveguide element 10. The waveguide element 10 in the embodiment of the present disclosure is different from a general waveguide that utilizes total reflection of light (hereinafter, may be referred to as “total reflection waveguide”), and has a pair of optical waveguide layers. A waveguide structure (hereinafter sometimes referred to as a “reflective waveguide”) sandwiched between mirrors (for example, a multilayer reflective film) is provided. The coupling of light to such a reflective waveguide has not been fully studied so far. The present inventors have come up with a novel structure for efficiently introducing light into the optical waveguide layer 20.

FIG. 6A is a cross-sectional view schematically showing an example of a configuration in which light is indirectly input via air and the mirror 30. In this example, propagating light is indirectly introduced into the optical waveguide layer 20 of the waveguide element 10 that is a reflective waveguide from the outside via air and the mirror 30. In order to introduce light into the optical waveguide layer 20, Snell's law (n _in sin θ _in = n _w sin θ _w ) needs to be satisfied with respect to the reflection angle θ _w of the guided light inside the optical waveguide layer 20. . Here, n _in is the refractive index of the external medium, θ _in is the incident angle of propagating light, and n _w is the refractive index of the optical waveguide layer 20. The light coupling efficiency can be maximized by adjusting the incident angle θ _in consideration of this condition. Further, in this example, a part of the first mirror 30 is provided with a reduced number of multilayer reflective films. Coupling efficiency can be increased by inputting light from that portion. However, in such a configuration, it is necessary to change the incident angle θ _in of light to the optical waveguide layer 20 in accordance with the change in the propagation constant of the optical waveguide layer 20 (change in θ _wav ).

In order to maintain a state in which light can always be coupled to the waveguide even if the propagation constant of the optical waveguide layer 20 changes, there is a method of injecting a beam having an angular spread into a portion where the number of multilayer reflective films is reduced. . As an example of such a method, as shown in FIG. 6B, air and the mirror 30 are externally transferred to the waveguide element 10 by an optical fiber 7 disposed at an angle θ _{in with} respect to the normal direction of the mirror 30. We examine the coupling efficiency when light is incident indirectly through the channel. Consider light as rays for simplicity. The numerical aperture (NA) of a normal single mode fiber is about 0.14. This is about ± 8 degrees in terms of angle. The range of the incident angle of light coupled to the waveguide is about the same as the spread angle of the light emitted from the waveguide. The spread angle θ _div of the emitted light is expressed by the following formula (4).

Here, L is the propagation length, λ is the wavelength of light, and θ _out is the light exit angle. When L is 10 μm or more, θ _div is at most 1 degree or less. Therefore, the coupling efficiency of light from the optical fiber 7 is 1/16 × 100% (that is, about 6.3%) or less. Further, FIG. 7 shows the result of calculating the change in coupling efficiency when the light emission angle θ _out is changed by fixing the light incident angle θ _in and changing the refractive index n _{w of the} waveguide. Coupling efficiency represents the ratio of the energy of guided light to the energy of incident light. The results shown in FIG. 7 were obtained by calculating the coupling efficiency when the incident angle θ _in was 30 °, the waveguide film thickness was 1.125 μm, and the wavelength was 1.55 μm. In this calculation, the output angle θ _out was changed in the range of 10 ° to 65 ° by changing the refractive index n _w in the range of 1.44 to 1.78. As shown in FIG. 7, in such a configuration, the coupling efficiency is less than 7% at the maximum. Further, when the emission angle θ _out is changed by 20 ° or more from the emission angle at which the coupling efficiency reaches a peak, the coupling efficiency is further reduced to half or less.

As described above, when the propagation constant is changed by changing the refractive index of the waveguide for optical scanning, the coupling efficiency is further reduced. In order to maintain the coupling efficiency, it is necessary to change the incident angle θ _{in of the} light according to the change of the propagation constant. However, the introduction of a mechanism that changes the incident angle θ _{in of the} light leads to a complicated apparatus configuration.

  The present inventors fix the light incident angle by providing a region having a waveguide in which the refractive index and the thickness are kept constant in the previous stage of the region having the waveguide whose refractive index or thickness is changed. I found that I can do things.

There are two important factors when considering the coupling of guided light in two different waveguides. The first is a propagation constant of propagating light, and the second is a mode electric field strength distribution. The closer these are in the two waveguides, the higher the coupling efficiency. The propagation constant β of the propagating light in the waveguide is expressed by β = k · sin θ _w = (2πn _w sin θ _w ) / λ when considered geometrically for simplicity. The wave number is k, the waveguide angle is θ _w , and the waveguide layer refractive index is n _w . In the total reflection type waveguide, the guided light is confined in the waveguide layer using total reflection, and therefore satisfies the total reflection condition n _w sin θ _w > 1. On the other hand, in the slow light waveguide, since the light is confined in the waveguide by the multilayer reflective films existing above and below the waveguide, and part of the guided light is emitted through the multilayer reflective film, n _w sin θ _w <1. The propagation constant cannot be equal between the total reflection waveguide and the slow light waveguide that emits part of the guided light. As for the electric field strength distribution, the electric field strength distribution of the total reflection waveguide as shown in FIG. 85 has a peak in the waveguide as shown in FIG. 86, and monotonously decreases outside the waveguide. However, in the slow light waveguide as shown in FIG. 87, the electric field strength distribution is as shown in FIG. Although it does not change that it has a peak in the waveguide, since the guided light is reflected by the interference of light in the dielectric multilayer film, the electric field strength penetrates deeply into the dielectric multilayer film as shown in FIG. Change. As described above, the total reflection type waveguide and the slow light waveguide are greatly different in the propagation constant of the guided light and the electric field intensity distribution. Therefore, it has not been considered to directly connect the total reflection waveguide and the slow light waveguide. The inventors have discovered that a total reflection waveguide can be directly connected to an optical waveguide layer having a variable refractive index and / or a variable thickness.

Furthermore, the present inventors have found that an optical scanning device can be easily manufactured by arranging such two types of waveguides on a common substrate. That is, two types of waveguides may be arranged on a single substrate formed integrally. A typical waveguide is fabricated on a substrate using a semiconductor process. For example, a waveguide structure is generally formed on a substrate by combining film formation by vapor deposition or sputtering and fine processing by lithography or etching. Examples of the material for the substrate include Si, SiO ₂ , GaAs, and GaN.

Reflective waveguides can also be fabricated using similar semiconductor processes. In the reflective waveguide, light is emitted by transmitting light from one of the pair of mirrors sandwiching the optical waveguide layer. In most cases, the mirror is made on a glass substrate available at a low cost. Instead of the glass substrate, a substrate such as Si, SiO ₂ , GaAs, or GaN may be used.

  By connecting another waveguide to the reflective waveguide, light can be introduced into the reflective waveguide.

  FIG. 8 is a diagram schematically showing connections between a plurality of first waveguides 1 fabricated on a substrate 50A and a plurality of second waveguides 10 fabricated on another substrate 50B. is there. The two substrates 50A and 50B are arranged in parallel to the XY plane. The plurality of first waveguides 1 and the plurality of second waveguides 10 extend in the X direction and are arranged in the Y direction. The first waveguide 1 is, for example, a general waveguide that uses total reflection of light. The second waveguide 10 is a reflective waveguide. By aligning and connecting the first waveguide 1 and the second waveguide 10 respectively disposed on the separate substrates 50A and 50B, the first waveguide 1 to the second waveguide 10 are connected. Light can be introduced.

In order to efficiently introduce light from the first waveguide 1 to the second waveguide 10, alignment with extremely high accuracy on the order of 10 nm is desired. Even if the alignment can be performed with high accuracy, if the thermal expansion coefficients of the two substrates 50A and 50B are different, the alignment may be shifted due to a temperature change. For example, the thermal expansion coefficients of Si, SiO ₂ , GaAs and GaN are approximately 4, 0.5, ⁶ and 5 (× 10 ⁻⁶ / K), respectively, and the thermal expansion coefficient of BK7 which is often used as a glass substrate. Is 9 (× 10 ⁻⁶ / K). Even if any material is combined as a separate substrate, a difference in thermal expansion coefficient of 1 × 10 ⁻⁶ / K or more occurs. For example, when the size of the two substrates 50A and 50B in the arrangement direction (Y direction in the drawing) of the plurality of first waveguides 1 and the plurality of second waveguides 10 is 1 mm, a temperature change of 1 ° C. The alignment of the two substrates 50A and 50B is shifted by 1 nm. Furthermore, the alignment of the two substrates 50A and 50B is greatly shifted on the order of several tens to hundreds of nm due to a temperature change of several tens of degrees Celsius. As a result, light cannot be efficiently introduced from the first waveguide 1 to the second waveguide 10.

  The present inventors have conceived that the above problem can be solved by disposing the first waveguide and the second waveguide on the same substrate. By arranging these waveguides on a common substrate, alignment of the first waveguide and the second waveguide is facilitated. Further, misalignment of the first waveguide and the second waveguide due to thermal expansion is suppressed. As a result, light can be efficiently introduced from the first waveguide to the second waveguide.

  An optical scanning device according to an aspect of the present disclosure includes a first waveguide, a second waveguide connected to the first waveguide, and a substrate that supports the first and second waveguides. The second waveguide includes one mirror having a multilayer reflective film, a second mirror having a multilayer reflective film facing the multilayer reflective film of the first mirror, the first mirror, and the first mirror. And an optical waveguide layer that is located between the two mirrors and that propagates the light that has been input to the first waveguide and propagated through the first waveguide. The first mirror has a light transmittance higher than that of the second mirror, and emits part of the light propagating in the optical waveguide layer to the outside of the optical waveguide layer. The optical scanning device further includes an adjusting element that changes the direction of outgoing light by changing at least one of the refractive index and the thickness of the optical waveguide layer.

  The “second waveguide” in the above aspect corresponds to the “waveguide element” in the above-described embodiment. In the embodiment of the present disclosure, a first waveguide whose refractive index and thickness are maintained constant is provided in the previous stage of the second waveguide, and light is input to the first waveguide. The first waveguide propagates the input light and inputs from the end face of the second waveguide. The end faces of the first waveguide and the second waveguide may be directly connected to each other, for example, there may be a gap between the end faces. In this specification, “the first waveguide and the second waveguide are connected” means that both are positioned in a manner in which light can be exchanged between the first waveguide and the second waveguide. Means that The form in which “the first waveguide and the second waveguide are connected” is not only the form in which the first waveguide and the second waveguide are directly connected (that is, in contact), but also the propagation A configuration in which both are arranged via a gap sufficiently shorter than the wavelength of the light to be transmitted is also included. In the present disclosure, “A is directly connected to B” means that any part of A and any part of B are gaps so that light can be exchanged between A and B. Contacting without.

  According to the above configuration, even if the incident angle of light incident on the first waveguide is kept constant by providing the first waveguide in front of the second waveguide (waveguide element), the scan is performed. It is possible to suppress a decrease in coupling efficiency (that is, energy loss) due to.

  According to the above configuration, the first waveguide and the second waveguide are easily aligned by arranging the first waveguide and the second waveguide on the same substrate. Further, misalignment of the first and second waveguides due to thermal expansion is suppressed. As a result, light can be efficiently introduced from the first waveguide to the second waveguide.

  Further, a third waveguide may be provided in front of the first waveguide. Such a third waveguide is connected to the first waveguide, and inputs light propagated through the third waveguide to the first waveguide. In certain embodiments, the third waveguide may be a total reflection waveguide and the second waveguide may be a reflection waveguide. The substrate that supports the first and second waveguides may further support the third waveguide.

FIG. 9 schematically shows a configuration example in which spacers 73 are arranged on both sides of the optical waveguide layer 20 located between the first mirror 30 and the second mirror 40, and the waveguide element 10 in the YZ plane. FIG. The refractive index n _low of the spacer 73 is lower than the refractive index n _w of the optical waveguide layer (n _low <n _w ). The spacer 73 may be air, for example. The spacer 73 may be, for example, TiO ₂ , Ta ₂ O ₅ , SiN, AlN, or SiO ₂ as long as it has a lower refractive index than the optical waveguide layer.

  FIG. 10 is a cross-sectional view of the optical scanning device in the YZ plane, schematically showing a configuration example of the waveguide array 10A in which the waveguide elements 10 in FIG. 9 are arranged in the Y direction. In the configuration example of FIG. 10, the width of the first mirror 30 is the same as the width of the optical waveguide layer 20 in the Y direction. Therefore, there is a problem that guided light leaks from a region where the first mirror 30 does not exist. Conventionally, when arraying a plurality of waveguide elements 10 including a plurality of reflective waveguides, the width of at least one of the first and second mirrors 30 and 40 is longer than the width of the optical waveguide layer 20. By doing so, there was no idea of preventing leakage of guided light.

  In order to improve the performance of optical scanning, it is desirable to thin the waveguide elements 10 in the waveguide array 10A. In this case, the problem that the guided light leaks becomes more remarkable.

  The reason why the guided light leaks will be described.

FIG. 11 is a diagram schematically showing that the guided light propagates in the X direction in the optical waveguide layer 20. Since n _w > n _low , the guided light propagates in the X direction while being confined by total reflection in the ± Y directions. However, actually, there is evanescent light that oozes out from the end face of the optical waveguide layer 20 in the Y direction. As shown in FIG. 2, the guided light propagates in the X direction at an angle smaller than the total reflection angle θ _in while being reflected by the first and second mirrors 30 and 40 in the ± Z direction. At this time, in the region where the first mirror 30 shown in FIG. 10 does not exist, the evanescent light is not reflected and leaks outside. Due to this unintended light loss, the amount of light used for light scanning can be reduced.

  The present inventors make the above-mentioned problem by making the width of at least one of the first and second mirrors 30 and 40 longer than the width of the optical waveguide layer 20 in the arrangement direction of the plurality of waveguide elements 10. I was able to solve this problem. Thereby, the above-mentioned unintended light loss can be reduced. As a result, a decrease in the amount of light used for optical scanning is suppressed.

  Further, the present inventors say that the optical waveguide layer 20 and the spacer 73 do not necessarily have to be formed of a uniform medium if the average refractive index of the optical waveguide layer 20 is higher than the average refractive index of the spacer 73. I found out. As an example, the optical waveguide layer 20 and the spacer 73 include a region constituted by a common material, and the optical waveguide layer 20 or the spacer 73 further includes at least one member having a refractive index different from that of the common material. But you can. Manufacturing cost can be reduced by using a low cost material for the common material.

  The present disclosure includes the devices described in the following items.

  An optical scanning device according to a first item includes: a first mirror having optical transparency; a second mirror facing the first mirror; and the first and second mirrors between the first mirror and the second mirror. Two non-waveguide regions arranged with a gap in a first direction parallel to at least one reflecting surface of the first and second mirrors, and between the first and second mirrors and the two non-conductive regions Located between the wave regions, having an average refractive index higher than the average refractive index of the non-waveguide region, parallel to the at least one reflecting surface of the first and second mirrors, and the first An optical waveguide region that propagates light along a second direction perpendicular to the direction; and a first adjustment element that changes at least one of a refractive index and a thickness of the optical waveguide region. Each of the optical waveguide region and the two non-waveguide regions includes a region made of a common material. Each of the optical waveguide region or the two non-waveguide regions further includes at least one member having a refractive index different from that of the common material. The first mirror has a higher light transmittance than the second mirror, and a part of the light propagating in the optical waveguide region is transferred from the optical waveguide region to the first and second mirrors. The light is emitted in a third direction that intersects a virtual plane parallel to the direction. The first adjustment element changes the third direction of light emitted from the optical waveguide region by changing at least one of a refractive index and a thickness of the optical waveguide region.

  In this optical scanning device, each of the optical waveguide region and the two non-waveguide regions includes a region made of a common material. Each of the optical waveguide region or the two non-waveguide regions further includes at least one member having a refractive index different from that of the common material. By using a low cost material for the common material, the manufacturing cost can be reduced.

  The optical scanning device according to the second item is the optical scanning device according to the first item, wherein each of the two non-waveguide regions includes the at least one member. The refractive index of the at least one member is lower than the refractive index of the common material.

  In this optical scanning device, light propagates in the optical waveguide region without leaking into the two non-waveguide regions.

  The optical scanning device according to a third item is the optical scanning device according to the second item, wherein the optical waveguide region includes at least one other member having a refractive index higher than a refractive index of the common material. .

  In this optical scanning device, light propagates in the optical waveguide region without leaking into the two non-waveguide regions.

  An optical scanning device according to a fourth item is the optical scanning device according to the first item, wherein the optical waveguide region includes the at least one member. The refractive index of the at least one member is higher than the refractive index of the common material.

  In this optical scanning device, light propagates in the optical waveguide region without leaking into the two non-waveguide regions.

  In the optical scanning device according to the fifth item, in the optical scanning device according to any one of the first to fourth items, the common material is air.

  In this optical scanning device, the manufacturing cost can be reduced by using air as a common material.

  The optical scanning device according to a sixth item is the optical scanning device according to any one of the first to fifth items, wherein the width of the optical waveguide region in the first direction is 3 μm or more.

  In this optical scanning device, the spread of the electric field in the waveguide mode is smaller than the width of the optical waveguide region. Accordingly, it is possible to relatively effectively suppress the evanescent light from leaking from the optical waveguide layer to each non-waveguide region.

  An optical scanning device according to a seventh item is the optical scanning device according to any one of the first to sixth items, wherein the dimension of the at least one member in a direction perpendicular to the first and second directions is It is greater than 0.1 times the distance between the first mirror and the second mirror.

  In this optical scanning device, the evanescent light oozes out from the optical waveguide layer to each non-waveguide region can be suppressed to some extent.

  An optical scanning device according to an eighth item is the optical scanning device according to any one of the first to seventh items, wherein the dimension of the at least one member in a direction perpendicular to the first and second directions is It is greater than 0.2 times the distance between the first mirror and the second mirror.

  In this optical scanning device, the evanescent light oozes out from the optical waveguide layer to each non-waveguide region can be suppressed relatively effectively.

  An optical scanning device according to a ninth item is the optical scanning device according to any one of the first to eighth items, wherein a width of each non-waveguide region in the first direction is the first of the optical waveguide region. It is larger than the width in the direction of 1.

  In this optical scanning device, even when there are two or more optical waveguide regions and a non-waveguide region exists between them, at least a part of the light propagating in the optical waveguide region is transferred to the adjacent optical waveguide region. The crosstalk phenomenon that is transmitted can be suppressed.

  An optical scanning device according to a tenth item is the optical scanning device according to any one of the first to seventh items, wherein the dimension of the at least one member in a direction perpendicular to the first and second directions is It is 0.2 times or less the distance between the first mirror and the second mirror. The width of each non-waveguide region in the first direction is larger than the width of the optical waveguide region in the first direction.

  In this optical scanning device, the width of the non-waveguide region in the first direction is larger than the width of the optical waveguide region in the first direction. Thereby, even if the dimension of at least one member is 0.2 times or less of the distance between the first mirror and the second mirror, the crosstalk phenomenon can be suppressed.

  An optical scanning device according to an eleventh item is the optical scanning device according to any one of the first to tenth items, wherein the at least one member is in contact with at least one of the first and second mirrors.

  In this optical scanning device, the region between the first mirror and the second mirror can be divided into an optical waveguide region and two non-waveguide regions by the above arrangement of at least one member.

  An optical scanning device according to a twelfth item is the optical scanning device according to any one of the first to eleventh items, wherein the two non-waveguide regions are provided between the first mirror and the second mirror. Two support members that are positioned outside and fix the distance between the first mirror and the second mirror are further provided.

  In this optical scanning device, for example, air can be used as a material common to both the optical waveguide region and the two non-waveguide regions by the support member.

  An optical scanning device according to a thirteenth item is the optical scanning device according to any one of the first to eleventh items, wherein the first adjustment element is connected to at least one of the first and second mirrors. An actuator is provided. The actuator changes the thickness of the optical waveguide region by changing a distance between the first mirror and the second mirror.

  In this optical scanning device, when the common material is, for example, air, the distance between the first mirror and the second mirror can be easily changed by an actuator.

  An optical scanning device according to a fourteenth item is the optical scanning device according to the thirteenth item, wherein the actuator includes a piezoelectric member. By deforming the piezoelectric member, the distance between the first mirror and the second mirror is changed.

  In this optical scanning device, the distance between the first mirror and the second mirror can be changed by an actuator including a piezoelectric member.

  In the optical scanning device according to the fifteenth item, in the optical scanning device according to any one of the first to twelfth items, the common material is liquid crystal. The first adjustment element includes a pair of electrodes that sandwich the optical waveguide region. The first adjustment element changes a refractive index of the optical waveguide region by applying a voltage to the pair of electrodes.

  In this optical scanning device, a voltage can be applied to the liquid crystal, which is a common material, by a pair of electrodes. Thereby, the direction of the light emitted to the outside from the first mirror can be changed.

  An optical scanning device according to a sixteenth item is the optical scanning device according to the fifteenth item, wherein an alignment film is provided between the second mirror and the liquid crystal and between the at least one member and the liquid crystal. Is located.

  In this optical scanning device, the liquid crystal can be aligned relatively efficiently in both the optical waveguide region and the two non-waveguide regions by the above arrangement of the alignment film.

  The optical scanning device according to a seventeenth item is the optical scanning device according to the sixteenth item, wherein each of the optical waveguide region and the two non-waveguide regions is perpendicular to the first and second directions. The thickness of the region where the common material is present is 100 nm or more.

  In this optical scanning device, alignment films can be easily provided in both the optical waveguide region and the two non-waveguide regions.

  The optical scanning device according to an eighteenth item is the optical scanning device according to the sixteenth or seventeenth item, wherein the width of the optical waveguide region in the first direction is perpendicular to the first and second directions. Greater than the dimension of the at least one member in the direction.

  In this optical scanning device, the liquid crystal in the optical waveguide region is more strongly affected by the alignment layer at the interface between the second mirror and the liquid crystal than on the side surface of the member. Thereby, the controllability of the liquid crystal alignment by the alignment layer can be improved.

  The optical scanning device according to a nineteenth item is the optical scanning device according to any one of the first to eighteenth items, wherein the second mirror is longer than the first mirror in the second direction. A dielectric layer located on a portion of the second mirror that does not overlap the first mirror when viewed from a direction perpendicular to the first and second directions; and on the dielectric layer A waveguide positioned and connected to the optical waveguide region for propagating light along the second direction. In a direction perpendicular to the first and second directions, the thickness of the dielectric layer and the dimension of the at least one member are 50% or less of the thickness of the optical waveguide region.

  In this optical scanning device, the sum of the thickness of the dielectric layer and the half value of the waveguide thickness can be made equal to the half value of the thickness of the optical waveguide region 20 in the Z direction. Thereby, the guided light can be efficiently coupled from the waveguide to the optical waveguide region.

  An optical scanning device according to a twentieth item is the optical scanning device according to any one of the first to nineteenth items, wherein at least one of the first and second mirrors includes a multilayer reflective film.

  In this optical scanning device, the effect of the optical scanning device according to any of the first to nineteenth items can be obtained.

  The optical scanning device according to a twenty-first item is the optical scanning device according to any one of the first to twentieth items, wherein a component of the wave number vector of the light emitted in the third direction is the component in the second direction. When the X component is used, the first adjustment element changes the X component of the wave vector by changing at least one of the refractive index and the thickness of the optical waveguide region.

  In this optical scanning device, the X component of the wave vector can be changed by changing at least one of the refractive index and the thickness of the optical waveguide region by the first adjustment element.

  An optical scanning device according to a twenty-second item is the optical scanning device according to any one of the first to twenty-first items, comprising a plurality of optical waveguide regions including the optical waveguide region and the two non-waveguide regions. A plurality of non-waveguide regions. The average refractive index of each of the plurality of optical waveguide regions is higher than the average refractive index of each of the plurality of non-waveguide regions. The plurality of optical waveguide regions and the plurality of non-waveguide regions are alternately arranged in the first direction between the first and second mirrors.

  In this optical device, the optical scanning devices described in the first item are arrayed. As a result, two-dimensional optical scanning becomes possible.

  An optical scanning device according to a twenty-third item is the optical scanning device according to the twenty-second item, wherein the optical scanning device is a plurality of phase shifters respectively connected to the plurality of optical waveguide regions, each of the plurality of optical waveguide regions. A plurality of phase shifters including a waveguide connected to the optical waveguide region in the corresponding one of the plurality of optical waveguide regions directly or via another waveguide, and light propagating from the plurality of phase shifters to the plurality of optical waveguide regions And a second adjustment element that changes the third direction of the light emitted from the plurality of optical waveguide regions by changing the phase difference.

  In this optical scanning device, optical scanning in a two-dimensional direction becomes possible by a plurality of phase shifters.

  The optical scanning device according to a twenty-fourth item is the optical scanning device according to the twenty-third item, wherein the waveguide in each phase shifter includes a material whose refractive index changes according to voltage application or temperature change. The second adjustment element changes a refractive index in the waveguide by applying a voltage to the waveguide in each phase shifter or changing a temperature of the waveguide, and from the plurality of phase shifters The difference in phase of light propagating to a plurality of optical waveguide regions is changed.

  In this optical scanning device, optical scanning in a two-dimensional direction is possible by changing the refractive index of the waveguide in the phase shifter by the second adjustment element.

  An optical scanning device according to a twenty-fifth item is the optical scanning device according to the twenty-third or twenty-fourth item, wherein a component in the first direction of a wave vector of light emitted in the third direction is a Y component. Then, the second adjustment element changes the Y component of the wave vector by applying a voltage to the waveguide in each phase shifter or changing the temperature of the waveguide.

  In this optical scanning device, the Y component of the wave vector can be changed by applying a voltage to the waveguide in each phase shifter by the second adjustment element or changing the temperature of the waveguide.

  A receiving device according to a twenty-sixth item includes a first mirror having light transparency, a second mirror facing the first mirror, and the first and second mirrors between the first mirror and the first mirror. And two non-waveguide regions arranged with a gap in a first direction parallel to at least one reflecting surface of the second mirror and the two non-waveguides between the first and second mirrors Located between the regions, having an average refractive index higher than the average refractive index of the non-waveguide region, parallel to the at least one reflecting surface of the first and second mirrors, and in the first direction An optical waveguide region for propagating light along a second direction perpendicular to the first direction element, and a first adjustment element for changing at least one of a refractive index and a thickness of the optical waveguide region. Each of the optical waveguide region and the two non-waveguide regions includes a region made of a common material. Each of the optical waveguide region or the two non-waveguide regions further includes at least one member having a refractive index different from that of the common material. The first mirror has a higher light transmittance than the second mirror. The optical waveguide region receives light incident on the optical waveguide region via the first mirror from a third direction intersecting a virtual plane parallel to the first and second directions. Propagate in the direction. The first adjustment element changes the direction of receivable light by changing at least one of a refractive index and a thickness of the optical waveguide region.

  In this optical receiving device, each of the optical waveguide region and the two non-waveguide regions includes a region made of a common material. Each of the optical waveguide region or the two non-waveguide regions further includes at least one member having a refractive index different from that of the common material. By using a low cost material for the common material, the manufacturing cost can be reduced.

  A receiving device according to a twenty-seventh item is the receiving device according to the twenty-sixth item, wherein a plurality of optical waveguide regions including the optical waveguide region, a plurality of non-waveguide regions including the two non-waveguide regions, Is provided. The average refractive index of each of the plurality of optical waveguide regions is higher than the average refractive index of each of the plurality of non-waveguide regions. The plurality of optical waveguide regions and the plurality of non-waveguide regions are alternately arranged in the first direction between the first and second mirrors.

  In this optical receiving device, the optical receiving devices described in Item 26 are arrayed. Thereby, light reception in a two-dimensional direction becomes possible.

  A receiving device according to a twenty-eighth item is the receiving device according to the twenty-seventh item, wherein the receiving device is a plurality of phase shifters respectively connected to the plurality of optical waveguide regions, each corresponding to the plurality of optical waveguide regions. A plurality of phase shifters including a waveguide connected to the optical waveguide region in one of them directly or through another waveguide, and the plurality of optical waveguide regions to be output through the plurality of phase shifters And a second adjustment element that changes the direction of receivable light by changing the difference in the phase of the light.

  In this optical receiving device, a plurality of phase shifters can receive light in a two-dimensional direction.

  A light detection system according to a twenty-ninth item includes the light scanning device according to any one of the first to twenty-first items, and a light detector that detects light emitted from the light scanning device and reflected from an object. And a signal processing circuit for generating distance distribution data based on the output of the photodetector.

  In this light detection system, distance distribution data of the object can be obtained by measuring the time when the light reflected from the object returns.

  In the present disclosure, “light” refers to electromagnetic waves including not only visible light (wavelength of about 400 nm to about 700 nm) but also ultraviolet light (wavelength of about 10 nm to about 400 nm) and infrared light (wavelength of about 700 nm to about 1 mm). means. In this specification, ultraviolet rays may be referred to as “ultraviolet light” and infrared rays may be referred to as “infrared light”.

  In the present disclosure, “scanning” with light means changing the direction of light. “One-dimensional scan” means changing the direction of light linearly along a direction intersecting the direction. “Two-dimensional scan” means that the direction of light is changed two-dimensionally along a plane intersecting the direction.

  Hereinafter, embodiments of the present disclosure will be described more specifically. However, more detailed explanation than necessary may be omitted. For example, detailed descriptions of already well-known matters and overlapping descriptions for substantially the same configuration may be omitted. This is to avoid the following description from becoming unnecessarily redundant and to facilitate understanding by those skilled in the art. In addition, the inventors provide the accompanying drawings and the following description in order for those skilled in the art to fully understand the present disclosure, and are not intended to limit the subject matter described in the claims. Absent. In the following description, the same or similar components are denoted by the same reference numerals.

(Embodiment)
FIG. 12 is a cross-sectional view schematically showing a part of the structure of the optical scanning device in the exemplary embodiment of the present disclosure. The optical scanning device includes a first waveguide 1 and a second waveguide (waveguide element) 10 connected to the first waveguide. The second waveguide 10 includes a first mirror 30 having a multilayer reflective film, a second mirror 40 having a multilayer reflective film opposite to the multilayer reflective film of the first mirror 30, a first mirror 30, and And the optical waveguide layer 20 positioned between the second mirrors 40. The optical waveguide layer 20 propagates light input to the first waveguide 1 and propagated through the first waveguide 1. The optical waveguide layer 20 propagates light in the same direction as the waveguide direction of the first waveguide 1. The first mirror 30 has a light transmittance higher than that of the second mirror 40, and emits part of the light propagating in the optical waveguide layer 20 to the outside of the optical waveguide layer 20. Although not shown in FIG. 12, the optical scanning device 100 further includes an adjustment element that changes at least one of the refractive index and the thickness of the optical waveguide layer 20. The optical waveguide layer 20 includes, for example, a material whose refractive index with respect to light propagating through the optical waveguide layer 20 changes when a voltage is applied. The adjustment element changes the direction of light emitted from the second waveguide 10 by changing the refractive index of the optical waveguide layer 20 by applying a voltage to the optical waveguide layer 20.

  The first waveguide 1 has two multilayer reflective films 3 and 4 facing each other, and an optical waveguide layer 2 sandwiched between the two multilayer reflective films 3 and 4. The multilayer reflective films 3 and 4 in the first waveguide 1 are higher than the multilayer reflective film on the light emitting side in the second waveguide 10 (that is, the first mirror 30) in order to transmit the guided light without loss. It is desirable to have reflectivity (ie low transmittance). Therefore, the film thickness of the multilayer reflective films 3 and 4 is desirably larger than the film thickness of the first mirror 30. The refractive index of the first waveguide 1, that is, the refractive index of the optical waveguide layer 2 in the first waveguide 1 does not change or changes by an amount different from the refractive index of the optical waveguide layer 20. Further, the thickness of the optical waveguide layer 2 does not change or changes by an amount different from the thickness of the optical waveguide layer 20. The first waveguide 1 is directly connected to the optical waveguide layer 20 in the second waveguide 10. For example, the end face of the optical waveguide layer 2 in the first waveguide 1 is connected to the end face of the optical waveguide layer 20 in the second waveguide 10. The multilayer reflective film 3 in this example has a portion 3a that is thinner (that is, has a lower reflectance) than the adjacent portion. Light is input from this portion 3a (also referred to as “light input portion 3a”). Thus, light can be efficiently introduced into the optical waveguide layer 2 by inputting light from a region having a low reflectance. The optical waveguide layer 2 propagates the light incident on the optical input unit 3 a and inputs the light to the end face of the optical waveguide layer 20 in the second waveguide 10. Thereby, light can be propagated from the optical waveguide layer 2 to the optical waveguide layer 20 and emitted from the mirror 30.

  In the second waveguide 10, since it is necessary to emit light, the reflectance of the multilayer reflective film of the first mirror 30 is lower than the reflectance of the multilayer reflective film of the second mirror 40. In the first waveguide 1, the reflectivity of the multilayer reflective films 3 and 4 is designed to be approximately the same as the reflectivity of the second mirror 40 so as not to emit light.

  With such a structure, the optical scanning device can efficiently emit light from the second waveguide 10 as described later.

FIG. 13 is a cross-sectional view schematically showing another example of the structure of the optical scanning device. In this example, the first waveguide 1 does not have the multilayer reflective films 3 and 4. The first waveguide 1 propagates light by total reflection. The first waveguide 1 has a grating 5 on a part of its surface. Light is input through the grating 5. In this example, the portion where the grating 5 is provided functions as an optical input unit. By providing the grating 5, it becomes easy to introduce light into the waveguide 1. When the multilayer reflective films 3 and 4 are not provided as in this example, the waveguide angle θ _w1 is designed so as to satisfy the total reflection condition. Also in this case, the refractive index of the first waveguide 1 does not change or changes by an amount different from that of the optical waveguide layer 20. Further, the thickness of the first waveguide 1, that is, the thickness of the optical waveguide layer 2 does not change or changes by an amount different from the thickness of the optical waveguide layer 20. Further, the first waveguide 1 is directly connected to the optical waveguide layer 20 in the second waveguide 10. Further, the optical waveguide layer 20 propagates light in the same direction as the waveguide direction of the first waveguide 1.

  FIG. 14 is a cross-sectional view schematically showing still another example of the structure of the optical scanning device. The optical scanning device in this example further includes a third waveguide 1 ′ connected to the first waveguide 1. The first waveguide 1 is a reflection type waveguide, and has two multilayer reflection films 3 and 4 facing each other and an optical waveguide layer 2 therebetween. On the other hand, the third waveguide 1 ′ is a total reflection waveguide that propagates light by total reflection. The refractive index of the third waveguide 1 ′ does not change or changes by an amount different from that of the optical waveguide layer 20. Further, the thickness of the third waveguide 1 ′, that is, the thickness of the optical waveguide layer 2 ′ does not change or changes by an amount different from the thickness of the optical waveguide layer 20. The third waveguide 1 ′ is directly connected to the optical waveguide layer 20 in the second waveguide 10. Further, the optical waveguide layer 20 propagates light in the same direction as the waveguide direction of the third waveguide 1 ′. Similar to the first waveguide 1 in the example of FIG. 13, the third waveguide 1 'has a grating 5' on a part of its surface. Light from the light source is input into the third waveguide 1 'via the grating 5'. In this example, the portion where the grating 5 ′ is provided functions as a light input unit. The refractive index or thickness of the optical waveguide layer 20 in the second waveguide 10 is modulated by an adjustment element (not shown) (for example, a modulation element). On the other hand, the first waveguide 1 does not have such a modulation function. In order to suppress the emission of light from the first waveguide 1, the reflectance of the reflection mirror (for example, the multilayer reflective films 3 and 4) of the first waveguide 1 is the first of the second waveguide 10. It is set higher than the reflectance of the mirror 30. The reflectance of the first mirror 30 in the second waveguide 10 is set lower than the reflectance of the second mirror 40. With such a configuration, light input to the third waveguide 1 ′ propagates through the third waveguide 1 ′ and the first waveguide 1 and is input to the second waveguide 10. The light is emitted to the outside via the first mirror 30 while further propagating through the optical waveguide layer 20 of the second waveguide 10.

  FIGS. 15 and 16A to 16C are diagrams illustrating an example of a method of inputting light to the first waveguide 1 in a configuration in which light is input to the first waveguide 1. FIG. 15 shows an example of light incident on the optical waveguide layer 2 sandwiched between two multilayer reflective films, as in the example shown in FIG. As shown in the drawing, the light can be efficiently introduced into the optical waveguide layer 2 by making the light incident on the portion 3a where the multilayer reflective film is thin (that is, the portion having a low reflectance) 3a. FIG. 16A illustrates an example in which light is introduced into the first waveguide 1 via the grating 5 provided on the surface of the first waveguide 1 as in the example illustrated in FIG. 13. FIG. 16B shows an example in which light is input from the end face of the first waveguide 1. FIG. 16C shows an example in which light is input from the laser light source 6 provided on the surface of the first waveguide 1 through the surface. The configuration as shown in FIG. Lamponi et al. , “Low-Threshold Heterogeneously Integrated InP / SOI Lasers With a Double Tapered Coupler”, IEEE PHOTOTONICS TECHNOLOGY LETTERS. 24, NO. 1, JANUARY 1, 2012, pp 76-78. Is disclosed. The entire disclosure of this document is incorporated herein by reference. According to the above configuration, light can be efficiently incident on the waveguide 1.

  Any of the light input methods shown in FIGS. 15 to 16C can be applied to the configuration using the third waveguide 1 ′ shown in FIG. 14. In the example shown in FIG. 14, the grating 5 ′ is provided on a part of the surface of the third waveguide 1 ′, but the grating 5 ′ may not be provided. For example, the light input method shown in FIG. 16B or 16C can be applied to the third waveguide 1 '. When the light input method shown in FIG. 16B is applied to the third waveguide 1 ′, the third waveguide 1 ′ propagates the light incident from the end face of the third waveguide 1 ′, and the first waveguide 1 ′ Input to the end face of the waveguide 1. When the light input method shown in FIG. 16C is applied to the third waveguide 1 ′, light is input from the laser light source provided on the surface of the third waveguide 1 ′ through the surface. The third waveguide 1 ′ propagates the input light and inputs it to the end face of the first waveguide 1. Further, the third waveguide 1 'is not necessarily a total reflection waveguide, and may be a reflection type waveguide as shown in FIG.

As shown in FIGS. 12 and 13, the refractive index of the optical waveguide layer 2 of the first waveguide 1 is n _w1 , the refractive index of the optical waveguide layer 20 of the second waveguide 10 is n _w2 , and the second waveguide is used. Assume that the emission angle of light from the waveguide 10 is θ, the reflection angle of the guided light in the first waveguide 1 is θ _w1 , and the reflection angle of the guided light in the second waveguide 10 is θ _w2 . As shown in FIG. 14, the refractive index of the optical waveguide layer 2 ′ in the third waveguide 1 ′ is n _w3 , and the reflection angle of the guided light in the third waveguide 1 ′ is θ _w3 . In the present embodiment, n _w2 sin θ _w2 = sin θ <1 is satisfied in order to extract the light from the second waveguide 10 to the outside (for example, an air layer having a refractive index of 1).

<Principle of guided light coupling>
Hereinafter, the principle of coupling of guided light between the waveguides 1 and 10 will be described with reference to FIGS. For simplicity, light propagating in the waveguides 1 and 10 is considered to be approximately a light beam. The interface between the multilayer reflective film above and below the waveguide 10 and the optical waveguide layer 20 and the interface between the multilayer reflective film above and below the waveguide 1 and the optical waveguide layer 2 (or the interface between the optical waveguide layer 2 and the external medium). Now assume that the light is completely reflected. The thickness of the optical waveguide layer 2 in the first waveguide 1 is d ₁ , and the thickness of the optical waveguide layer 20 in the second waveguide 10 is d ₂ . In each of the waveguides 1 and 10, conditions under which propagating light exists are expressed by the following equations (5) and (6).
2d ₁ n _w1 cos θ _w1 = mλ (5)
2d ₂ n _w2 cos θ _w2 = mλ (6)
Here, λ is the wavelength of light, and m is an integer of 1 or more.

When Snell's law is taken into consideration for the interfaces of the waveguides 1 and 10, Expression (7) is established.
n _w1 sin (90 ° −θ _w1 ) = n _w2 sin (90 ° −θ _w2 ) (7)

When Expression (7) is transformed, the following Expression (8) is obtained.
n _w1 cos θ _w1 = n _w2 cos θ _w2 (8)

When equations (5) and (8) are established, if d ₁ and d ₂ are equal, equation (6) is also established when n _w2 changes. That is, even when the refractive index of the optical waveguide layer 20 changes, the light efficiently propagates from the optical waveguide layer 2 to the optical waveguide layer 20.

In the derivation of the above equation, the light is considered as a light beam for simplicity. However, since the thicknesses d ₁ and d ₂ are about the same as the wavelength λ (10 times or less of the wavelength at the longest), Have sex. Therefore, strictly speaking, it is necessary to consider not the refractive index of the material of the optical waveguide layers 2 and 20 but the effective refractive index as the refractive indexes n _w1 and n _w2 . Further, the light even when not satisfied when the thickness d ₂ of the optical waveguide layer 2 having a thickness of d ₁ and the optical waveguide layer 20 are not the same, or exactly the formula (8) optical from the optical waveguide layer 2 It can be guided to the wave layer 20. This is because light is transmitted from the optical waveguide layer 2 to the optical waveguide layer 20 through a near field. That is, if there is an overlap between the electric field distribution in the optical waveguide layer 2 and the electric field distribution in the optical waveguide layer 20, light is transmitted from the optical waveguide layer 2 to the optical waveguide layer 20.

  The above discussion holds true for the guided light between the third waveguide 1 'and the first waveguide 1 in the example shown in FIG.

<Calculation result>
In order to confirm the effect of this embodiment, the present inventors calculated the light coupling efficiency under various conditions. For the calculation, FIIMWAVE manufactured by Photon Design was used.

  First, as shown in FIG. 12, the coupling efficiency was calculated for a configuration in which both the waveguides 1 and 10 are sandwiched between multilayer reflective films. In the following calculation, the order of the mode of light propagating from the waveguide 1 to the waveguide 10 is m = 2, but if the order of the mode of light in the waveguide 1 and the waveguide 10 is the same, the same Light couples by principle. For this reason, the order of the light mode is not limited to m = 2.

FIG. 17 shows the d ₂ dependence of the coupling efficiency of guided light from the waveguide 1 to the waveguide 10 when n _w1 is 1.45, d ₁ is 1.27 μm, and the wavelength λ is 1.55 μm. Yes. The horizontal axis represents a value obtained by dividing d ₂ by a _cutoff film thickness d _cutoff (= mλ / (2n _w2 )) when the guided light is assumed to be a light beam. The vertical axis represents the coupling efficiency normalized with a peak value of 1. The calculation was performed from a lower limit value that satisfies a cutoff condition where guided light cannot exist to an upper limit value at which light is emitted to the outside. _{Further, n w2} has been calculated for each case of 1.3,1.6,1.9,2.2,2.5. The center in the thickness direction of the first waveguide 1 and the center in the thickness direction of the second waveguide 10 are the same. From the results shown in FIG. 17, it can be seen that the greater the d ₂ / d _{cutoff, the} higher the coupling efficiency. As d ₂ / d _cutoff decreases, the mode cannot exist and the coupling efficiency decreases.

FIG. 18 shows the result of calculation performed in the same manner by changing n _w1 to 3.48 and d ₁ to 0.5 μm. Also in this case, the order of the mode of light propagating from the waveguide 1 to the waveguide 10 is m = 2, but the order of the mode of light is not limited to m = 2 as described above. As can be seen from FIG. 18, as d ₂ / d _cutoff increases, the coupling efficiency increases. As d ₂ / d _cutoff decreases, the mode cannot exist and the coupling efficiency decreases.

In FIG. 17 and FIG. 18, the mode exists even when d ₂ / d _cutoff is lower than 1 (that is, the guided light is coupled). This is because the effective thickness of the optical waveguide layer 2 becomes thicker than d ₂ due to the seepage. The upper limit of d _2, a value that the light is not emitted to the outside. This value is based on the assumption that the guided light is a light ray, and that the multilayer reflective films above and below each waveguide completely reflect the light at the interface with the waveguide. D ₂ when At this time, the following expression (9) is satisfied.
n _w2 sin θ _w2 = 1 (9)

From Expression (6), Expression (9), and d _cutoff = mλ / (2n _w2 ), the following Expression (10) is established.
d ₂ / d _cutoff = n _{w 2} / √ (n _w ^{2 2} −1) (10)

The effective refractive index of the guided light is lower than n _w2 due to the bleeding of light when reflected by the multilayer reflective film. For this reason, the upper limit value of d ₂ is larger than that of the equation (6).

In the configuration of this embodiment, it is desirable that the coupling efficiency be higher than that in the configuration shown in FIG. 6B. For example, from the results of FIGS. 17 and 18, the following expression is satisfied, thereby satisfying the condition that the coupling efficiency is 7% or higher, which is higher than the peak value shown in FIG. 7.
0.95 × d _cutoff <d ₂ <1.5 × d _cutoff
(0.95 × mλ / (2n _w2 ) <d ₂ <1.5 × mλ / (2n _w2 ))

In FIG. 19, the horizontal axis is d ₂ / d _cutoff , the vertical axis is the refractive index ratio (| n _w1 −n _w2 | / n _w1 ), and the coupling efficiency is 0.5 or more. It is the figure which classified the case where it becomes less than 5. For example, when the refractive index ratio is smaller than 0.4 and the following expression is satisfied, the condition that the coupling efficiency is 0.5 (50%) or more is satisfied.
0.95 × d _cutoff <d ₂ <1.5 × d _cutoff

In the present embodiment, the refractive index n _{w1 of the} first waveguide 1 is larger than the refractive index n _{w2 of} the second waveguide 10 (n _w1 > n _w2 ). However, the present disclosure is not limited to such a configuration, and may satisfy n _w1 ≦ n _w2 .

  FIG. 20 is a diagram showing a configuration in which the center in the thickness direction of the optical waveguide layer 2 in the first waveguide 1 and the center in the thickness direction of the optical waveguide layer 20 in the second waveguide 10 are shifted by Δz. It is. As shown in FIG. 20, Δz is positive or negative when the center line in the thickness direction of the optical waveguide layer 20 of the second waveguide 10 is the center line in the thickness direction of the optical waveguide layer 2 of the first waveguide 1. It is assumed that the time is closer to the light emission side (that is, the first mirror 30 side). Let Δd be the absolute value of the difference between the thickness d1 of the optical waveguide layer 2 of the first waveguide 1 and the thickness d2 of the optical waveguide layer 20 of the second waveguide 10. When Δz = Δd / 2, the position in the Z direction of the lower portion of the optical waveguide layer 2 of the waveguide 1 (that is, the side opposite to the light emission side) and the lower portion of the optical waveguide layer 20 of the waveguide 10 are the same.

FIG. 21 is a diagram illustrating the Δz dependency of the coupling efficiency of light from the first waveguide 1 to the second waveguide 10. The result of FIG. 21 was obtained by calculating the coupling efficiency by changing Δz with n _w1 of 2.2, wavelength λ of 1.55 μm, n _w2 of 2.2, and Δd of 0.12 μm. The coupling efficiency shown in FIG. 21 is normalized by the value in the case of Δz = 0. When the center line in the thickness direction of the optical waveguide layers 2 and 20 is shifted in the Z direction, the coupling efficiency is lower than when Δz is zero (0). However, in the case of −Δd / 2 <Δz <Δd / 2, it becomes 90% or more of the coupling efficiency when Δz is 0, and a relatively high coupling efficiency can be maintained.

As in the example shown in FIG. 13, the basic principle is the same for the configuration in which the first waveguide 1 guides light by total reflection, and the guided light propagating through the waveguides 1 and 10 is coupled to each other. Can do. Also for the configuration shown in FIG. 13, the d ₂ dependence of the coupling efficiency of guided light from the first waveguide 1 to the second waveguide 10 was obtained by calculation. FIG. 22A shows the d ₂ dependence of the coupling efficiency when n _w1 is 2.2, d ₁ is 0.7 μm, and wavelength λ is 1.55 μm. FIG. 22B shows the d ₂ dependence of the coupling efficiency when n _w1 is 3.48, d ₁ is 0.46 μm, and wavelength λ is 1.55 μm. For example, when the following expression is satisfied, the condition that the coupling efficiency is 7% or more is satisfied.
0.95 × d _cutoff <d2 <1.5 × d _cutoff
(That is, 0.95 × mλ / (2n _w2 ) <d2 <1.5 × mλ / (2n _w2 ))

For example, the condition that the coupling efficiency is 50% or more is satisfied by satisfying the following expression.
1.2 × d _cutoff <d2 <1.5 × d _cutoff
(That is, 1.2 × mλ / (2n _w2 ) <d2 <1.5 × mλ / (2n _w2 ))

Also in the configuration of FIG. 13, n _w1 > n _w2 may be _satisfied , or n _w1 ≦ n _w2 may be _satisfied .

As described above, the order of the mode of light propagating from the waveguide 1 to the waveguide 10 is not limited to m = 2. For example, when calculation is performed using a model as shown in FIG. 23A under the conditions of n _w1 = 1.883, d ₁ = 0.3 μm, n _w2 = 1.6, d ₂ = 0.55 μm, as shown in FIG. 23B. In addition, it can be seen that light is coupled to the waveguide.

  Next, a case where there is a gap between the first waveguide 1 and the second waveguide 10 will be considered.

  FIG. 24A is a cross-sectional view showing a modification of the present embodiment. In this example, the optical waveguide layer 20 in the second waveguide 10 is connected to the first waveguide 1 through a gap (for example, a gap). Thus, even when a gap exists between the first waveguide 1 and the second waveguide 10, the light is coupled through the near field of the waveguide mode, so that the gap width (X If the direction width is sufficiently smaller than the wavelength λ, the guided light is coupled between the waveguides 1 and 10. This is different from the method of coupling the propagating light in the free space to the guided mode as shown in FIG. 6A or 6B.

FIG. 24B is a diagram illustrating a calculation result of gap width dependency of coupling efficiency. The coupling efficiency in FIG. 24B is a value normalized with a value of 1 when the gap is 0 μm. In the calculation, n _w1 was 3.48, n _w2 was 1.5, d ₁ was 0.9 μm, d ₂ was 1.1 μm, the refractive index of the gap was 1, and the wavelength λ was 1.55 μm. From FIG. 24B, the standardized coupling efficiency is 50% or more when the gap is 0.24 μm or less. Considering the case where the gap is a medium other than air and the case where the wavelength λ is different from 1.55 μm, the optical length of the gap (the product of the refractive index of the gap and the gap width) should be λ / 6.5 or less. For example, the standardized coupling efficiency is 50% or more. The optical length of this gap does not depend on the parameters of the waveguides 1 and 10.

  As in the example shown in FIG. 14, the end face of the third waveguide 1 ′ and the first waveguide are similarly applied to the first waveguide 1 in the form in which light is input from the third waveguide 1 ′. There may be a gap between one end face. As described above, the optical length of the gap (the product of the refractive index of the gap and the gap width) is set to, for example, λ / 6.5 or less.

  Next, two-dimensional light scanning is performed using a plurality of combinations of the first waveguide 1 and the second waveguide 10 (referred to as “waveguide units” in this specification) in the present embodiment. The structure which implement | achieves is demonstrated. An optical scanning device capable of performing a two-dimensional scan includes a plurality of waveguide units arranged in a first direction and an adjustment element (for example, a combination of an actuator and a control circuit) that controls each waveguide unit. The adjustment element changes at least one of the refractive index and the thickness of the optical waveguide layer 20 in the second waveguide 10 in each waveguide unit. Thereby, the direction of the light emitted from each second waveguide 10 can be changed. In addition, as described with reference to FIG. 1, two-dimensional scanning of light is possible by inputting light whose phase difference is appropriately adjusted to the second waveguide 10 in the plurality of waveguide units. It becomes. Hereinafter, an embodiment for realizing the two-dimensional scan will be described in more detail.

<Operation principle of 2D scanning>
In a waveguide array in which a plurality of waveguide elements (that is, second waveguides) 10 are arranged in one direction, the light emission direction changes due to interference of light emitted from each waveguide element 10. By adjusting the phase of the light supplied to each waveguide element 10, the light emission direction can be changed. The principle will be described below.

  FIG. 25A is a diagram illustrating a cross section of a waveguide array that emits light in a direction perpendicular to the exit surface of the waveguide array. FIG. 25A also describes the phase shift amount of light propagating through each waveguide element 10. Here, the phase shift amount is a value based on the phase of light propagating through the leftmost waveguide element 10. The waveguide array in the present embodiment includes a plurality of waveguide elements 10 arranged at equal intervals. In FIG. 25A, a broken arc indicates a wavefront of light emitted from each waveguide element 10. A straight line indicates a wavefront formed by light interference. The arrow indicates the direction of light emitted from the waveguide array (that is, the direction of the wave vector). In the example of FIG. 25A, the phase of light propagating through the optical waveguide layer 20 in each waveguide element 10 is the same. In this case, light is emitted in a direction (Z direction) perpendicular to both the arrangement direction (Y direction) of the waveguide elements 10 and the direction in which the optical waveguide layer 20 extends (X direction).

  FIG. 25B is a diagram illustrating a cross section of the waveguide array that emits light in a direction different from the direction perpendicular to the emission surface of the waveguide array. In the example of FIG. 25B, the phases of light propagating through the optical waveguide layer 20 in the plurality of waveguide elements 10 differ by a certain amount (Δφ) in the arrangement direction. In this case, the light is emitted in a direction different from the Z direction. By changing this Δφ, the component in the Y direction of the wave number vector of light can be changed.

  The direction of light emitted from the waveguide array to the outside (here, air) can be quantitatively discussed as follows.

FIG. 26 is a perspective view schematically showing a waveguide array in a three-dimensional space. X mutually orthogonal, in the three-dimensional space defined by Y and Z directions and a region where light is emitted to the air, the interface between the waveguide array and Z = z _0. This boundary surface includes the emission surfaces of the plurality of waveguide elements 10. In Z <z ₀ , the plurality of waveguide elements 10 are arranged at equal intervals in the Y direction, and each of the plurality of waveguide elements 10 extends in the X direction. When Z> z ₀ , the electric field vector E (x, y, z) of the light emitted to the air is expressed by the following equation (11).

Where E ₀ is the electric field amplitude vector, k _x , k _y and k _z are wave numbers in the X, Y and Z directions, respectively, and j is an imaginary unit. In this case, the direction of the light emitted to the air is parallel to the wave vector (k _x , k _y , k _z ) represented by thick arrows in FIG. The magnitude of the wave vector is expressed by the following equation (12).

From the boundary condition of the electric field at Z = z _0, the wave vector components k _x and k _y parallel to the boundary surface respectively match the wave numbers in the X and Y directions of the light in the waveguide array. This is equivalent to the condition that, in the same manner as Snell's law of equation (2), the wavelength in the surface direction of the air-side light matches the wavelength in the surface direction of the light on the waveguide array side at the boundary surface. To do.

k _x is equal to the wave number of light propagating through the optical waveguide layer 20 of the waveguide element 10 extending in the X direction.
In the waveguide element 10 shown in FIG. 2 described above, k _x is expressed by the following equation (13) using the equations (2) and (3).

k _y is derived from the phase difference of light between two adjacent waveguide elements 10. The center in the Y direction of each of the N waveguide elements 10 arranged at equal intervals in the Y direction is y _q (q = 0, 1, 2,..., N−1), and two adjacent conductors. Let p be the distance between the waveguide elements 10 (center-to-center distance). At that time, the electric field vector (expression (11)) of the light emitted to the air satisfies the relationship of the following expression (14) at y _q and y _{q + 1} within the boundary surface (Z = z ₀ ).

The phase difference between the any two adjacent waveguide element 10 is Δφ = k y _{p (constant)}
If set to be, k _y satisfy the relationship of the following equation (15).

In this case, the phase of light at y _q is φ _q = φ ₀ + qΔφ (φ _{q + 1} −φ _q = Δφ). That is, the phase phi _q along the Y direction, a constant (Δφ = 0) or increased proportionally (Δφ> 0) or decrease (Δφ <0) is. If waveguide element 10 arranged in the Y direction is not equally spaced, for example, for the desired _{k y,} the phase difference at _{y q} and _{y q + 1} is _{Δφ q = φ q + 1 -φ} q = k y (y _{q + 1−} y _q ). In this case, the phase of the light in the _{y q} becomes _{φ q = φ 0 + k y} (y q -y 0). By using k _x and k _y obtained from Expression (14) and Expression (15), respectively, k _z is derived from Expression (12). Thereby, the light emission direction (that is, the direction of the wave vector) is obtained.

For example, as shown in FIG. 26, the angle formed by the wave vector (k _x , k _y , k _z ) of the emitted light and a vector (0, k _y , k _z ) obtained by projecting the wave vector onto the YZ plane is _defined. Let θ. θ is an angle formed by the wave vector and the YZ plane. θ is expressed by the following equation (16) using equations (12) and (13).

  Expression (16) is exactly the same as Expression (3) when limited to the case where the emitted light is parallel to the XZ plane. As can be seen from Equation (16), the X component of the wave vector changes depending on the wavelength of light, the refractive index of the optical waveguide layer 20, and the thickness of the optical waveguide layer 20.

Similarly, as shown in FIG. 26, the wave vector of the emitted light (0 order _{light) (k x, k y,} k z) and the vector obtained by projecting the wave vector in the XZ plane _(k x, 0, _{k z} ) Is defined as α ₀ . α ₀ is an angle formed by the wave vector and the XZ plane. α ₀ is represented by the following formula (17) using formula (12) and formula (13).

  As can be seen from the equation (17), the Y component of the light wave vector changes with the light phase difference Δφ.

As described above, instead of the wave vector (k _x , k _y , k _z ), the light emission direction can be specified using θ and α ₀ obtained from the equations (16) and (17), respectively. . In that case, a unit vector representing the light emission direction can be expressed as (sin θ, sin α ₀ , (1-sin ² α ₀ −sin ² θ) ^1/2 ). Since all these vector components must be real numbers in the light emission, sin ² α ₀ + sin ² θ ≦ 1 is satisfied. From sin ² α ₀ ≦ 1-sin ² θ = cos ² θ, it can be seen that the emitted light changes in an angle range satisfying −cos θ ≦ sin α ₀ ≦ cos θ. From −1 ≦ sin α ₀ ≦ 1, when θ = 0 ^o , the emitted light changes in an angular range of −90 ^o ≦ α ₀ ≦ 90 ^o . However, as cos θ decreases as θ increases, the angle range of α ₀ becomes narrower. At θ = 90 ^o (cos θ = 0), light is emitted only when α ₀ = 0 ^o .

The two-dimensional scan with light in the present embodiment can be realized if there are at least two waveguide elements 10. However, when the number of the waveguide element 10 is small, the spread angle Δα of the above alpha ₀ is increased. As the number of waveguide elements 10 increases, Δα decreases. This can be explained as follows. For simplicity, consider the case of θ = 0 ^o in FIG. That is, consider a case where the light emission direction is parallel to the YZ plane.

It is assumed that light having the same emission intensity and the above-described phase φ _q is emitted from each of N (N is an integer of 2 or more) waveguide elements 10. At that time, the absolute value of the amplitude distribution of the total light (electric field) emitted from the N waveguide elements 10 is proportional to F (u) expressed by the following equation (18) in the far field.

However, u is represented by the following formula (19).

α is an angle formed by a straight line connecting the observation point and the origin and the Z axis in the YZ plane. α ₀ satisfies Expression (17). F (u) in Expression (18) is N (maximum) when u = 0 (α = α ₀ ), and ₀ when u = ± 2π / N. If the angles satisfying u = −2π / N and 2π / N are α ₁ and α ₂ (α ₁ <α ₀ <α ₂ ), respectively, the spread angle of α ₀ is Δα = α ₂ −α ₁ . A peak in the range of −2π / N <u <2π / N (α ₁ <α <α ₂ ) is generally called a main lobe. There are a plurality of small peaks called side lobes on both sides of the main lobe. When comparing the main lobe width Δu = 4π / N and Δu = 2πpΔ (sin α) / λ obtained from the equation (19), Δ (sin α) = 2λ / (Np). If Δα is small, Δ (sin α) = sin α ₂ −sin α ₁ = [(sin α ₂ −sin α ₁ ) / (α ₂ −α ₁ )] Δα≈ [d (sin α) / dα] α ₌ α ₀ Δα = cos α ₀ Δα. For this reason, a spread angle is represented by the following formula | equation (20).

Therefore, as the number of waveguide elements 10 increases, the spread angle Δα can be reduced, and high-definition optical scanning can be realized even in a distant place. A similar argument can be applied to the case of θ ≠ 0 ^o in FIG.

<Diffraction light emitted from waveguide array>
From the waveguide array, high-order diffracted light can be emitted in addition to zero-order light. For simplicity, consider the case of θ = 0 ^o in FIG. That is, the outgoing direction of the diffracted light is parallel to the YZ plane.

FIG. 27A is a schematic diagram showing how diffracted light is emitted from the waveguide array when p is larger than λ. In this case, if there is no phase shift (α ₀ = 0 ^o ), 0th-order light and ± 1st-order light are emitted in the direction of the solid line arrow shown in FIG. 27A (depending on the size of p, higher-order diffraction Light can also be emitted). When a phase shift is applied from this state (α ₀ ≠ 0 ^o ), the emission angles of the 0th-order light and the ± 1st-order light change in the same rotation direction as indicated by broken line arrows shown in FIG. 27A. Although it is possible to perform beam scanning using high-order light such as ± first-order light, only the 0th-order light is used when the device is configured more simply. In order to avoid a decrease in the gain of the zero-order light, the emission of high-order light may be suppressed by making the distance p between the two adjacent waveguide elements 10 smaller than λ. Even if p> λ, it is possible to use only the 0th order light by physically blocking the higher order light.

FIG. 27B is a schematic diagram showing a state in which diffracted light is emitted from the waveguide array when p is smaller than λ. In this case, if there is no phase shift (α ₀ = 0 ^o ), the higher-order diffracted light does not exist because the diffraction angle exceeds 90 degrees, and only the 0th-order light is emitted forward. However, when p is a value close to λ, if a phase shift is applied (α ₀ ≠ 0 ^o ), ± first-order light may be emitted as the emission angle changes.

FIG. 27C is a schematic diagram showing a state in which diffracted light is emitted from the waveguide array in the case of p≈λ / 2. In this case, even if a phase shift is given, (α ₀ ≠ 0 ^o ) ± primary light is not emitted, or even if it is emitted, it is emitted at a considerably large angle. In the case of p <λ / 2, high-order light is not emitted even if a phase shift is given. However, there is no particular merit by making p smaller than this. Therefore, p can be set to λ / 2 or more, for example.

  The relationship between the 0th order light and the ± 1st order light emitted to the air in FIGS. 27A to 27C can be quantitatively explained as follows. F (u) in Expression (18) is a periodic function of 2π because F (u) = F (u + 2π). When u = ± 2 mπ, F (u) = N (maximum). At that time, ± m-order light is emitted at an emission angle α satisfying u = ± 2 mπ. A peak in the vicinity of u = ± 2 mπ (m ≠ 0) (peak width is Δu = 4π / N) is called a grating lobe.

Considering only ± first-order light among the high-order lights (u = ± 2π), the emission angle α ± of ± first-order light satisfies the following expression (21).

P <λ / (1−sin α ₀ ) is obtained from the condition sin α ₊ > 1 where the ₊ 1st order light is not emitted. Similarly, p <λ / (1 + sin α ₀ ) is obtained from the condition sin α ₋ <−1 where the −1st order light is not emitted.

Conditions for whether ± first-order light is emitted with respect to the zero-order light with the emission angle α ₀ (> 0) are classified as follows. When p ≧ λ / (1−sin α ₀ ), both ± first-order lights are emitted. When λ / (1 + sin α ₀ ) ≦ p <λ / (1-sin α ₀ ), + 1st order light is not emitted, but −1st order light is emitted. In the case of p <λ / (1 + sin α ₀ ), neither ± first-order light is emitted. In particular, if p <λ / (1 + sin α ₀ ) is satisfied, ± first-order light is not emitted even in the case of θ ≠ 0 ^o in FIG. For example, when ± 1st order light is not emitted, in order to achieve scanning of 10 ° or more on one side, α ₀ = 10 °, and p satisfies the relationship of p ≦ λ / (1 + sin10 °) ≈0.85λ. For example, when this expression is combined with the above-described lower limit condition regarding p, p satisfies λ / 2 ≦ p ≦ λ / (1 + sin 10 °).

However, in order to satisfy the condition that ± 1st order light is not emitted, it is necessary to make p very small. This makes the fabrication of the waveguide array difficult. Therefore, consider scanning 0th order light in an angle range of 0 ° <α ₀ <α _max regardless of the presence or absence of ± 1st order light. However, it is assumed that ± first-order light does not exist in this angular range. In order to satisfy this condition, at α ₀ = 0 °, the emission angle of the + 1st order light must be α ₊ ≧ α _max (that is, sin α ₊ = (λ / p) ≧ sin α _max ), and α ₀ = Α _max , the emission angle of the −1st order light must be α ₋ ≦ 0 (that is, sin α ₋ = sin α _max − (λ / p) ≦ 0). From these restrictions, p ≦ λ / sin α _max is obtained.

From the above discussion, the maximum value α _max of the zero-order light emission angle α _{0 in} the case where the ± first-order light does not exist in the scan angle range satisfies the following formula (22).

For example, in order to achieve a scan of 10 degrees or more on one side when ± 1st order light does not exist within the scan angle range, α _max = 10 ° and p ≦ λ / sin 10 ° ≈5.76λ is satisfied. For example, when this expression is combined with the above-described lower limit condition regarding p, p satisfies λ / 2 ≦ p ≦ λ / sin 10 °. Since the upper limit of p (p≈5.76λ) is sufficiently larger than the upper limit (p≈0.85λ) when ± 1st order light is not emitted, the fabrication of the waveguide array is relatively easy. Here, when the used light is not a single wavelength light, the center wavelength of the used light is λ.

  From the above, in order to scan a wider angle range, it is necessary to reduce the distance p between the waveguides. On the other hand, when p is small, it is necessary to increase the number of waveguide arrays in order to reduce the spread angle Δα of the emitted light in Equation (20). The number of waveguide arrays is appropriately determined according to the application and required performance. The number of waveguide arrays may be, for example, 16 or more, and may be 100 or more depending on the application.

<Phase control of light introduced into waveguide array>
In order to control the phase of the light emitted from each waveguide element 10, for example, a phase shifter that changes the phase of the light is provided before the light is introduced into the waveguide element 10. The optical scanning device 100 according to the embodiment includes a plurality of phase shifters connected to each of the plurality of waveguide elements 10 and a second adjustment element that adjusts the phase of light propagating through each phase shifter. Each phase shifter includes a waveguide connected to the optical waveguide layer 20 in a corresponding one of the plurality of waveguide elements 10 directly or via another waveguide. The second adjustment element changes the phase difference of the light propagating from the plurality of phase shifters to the plurality of waveguide elements 10 to change the direction of light emitted from the plurality of waveguide elements 10 (that is, the third Direction D3). In the following description, similarly to the waveguide array, a plurality of arranged phase shifters may be referred to as “phase shifter arrays”.

  FIG. 28 is a schematic diagram illustrating an example of a configuration in which the phase shifter 80 is directly connected to the waveguide element 10. In FIG. 28, a portion surrounded by a broken line frame corresponds to the phase shifter 80. The phase shifter 80 includes a pair of opposing mirrors (a fifth mirror 30a and a sixth mirror 40a, hereinafter simply referred to as a mirror) and a waveguide provided between the mirror 30a and the mirror 40a. 20a. The waveguide 20 a in this example is configured by a member common to the optical waveguide layer 20 in the waveguide element 10, and is directly connected to the optical waveguide layer 20. Similarly, the mirror 40 a is also composed of a member common to the mirror 40 in the waveguide element 10 and is connected to the mirror 40. The mirror 30 a has a lower transmittance (higher reflectance) than the mirror 30 in the waveguide element 10. The mirror 30 a is connected to the mirror 30. In the phase shifter 80, the transmittance of the mirror 30a is designed to be as low as that of the mirrors 40 and 40a so as not to emit light. That is, the light transmittance of the fifth mirror 30 a and the sixth mirror 40 a is lower than the light transmittance of the first mirror 30. In this example, the phase shifter 80 corresponds to the “first waveguide” in the present disclosure. Thus, the “first waveguide” may function as a phase shifter.

  FIG. 29 is a schematic view of the waveguide array 10A and the phase shifter array 80A viewed from the normal direction (Z direction) of the light emitting surface. In the example shown in FIG. 29, all the phase shifters 80 have the same propagation characteristics, and all the waveguide elements 10 have the same propagation characteristics. Each phase shifter 80 and each waveguide element 10 may have the same length or may have different lengths. When the lengths of the respective phase shifters 80 are equal, for example, the respective phase shift amounts are adjusted by the drive voltage. In addition, by adopting a structure in which the length of each phase shifter 80 is changed in equal steps, it is possible to give an equal step phase shift with the same drive voltage. Further, the optical scanning device 100 drives an optical branching device 90 that branches and supplies light to a plurality of phase shifters 80, a first drive circuit 110 that drives each waveguide element 10, and each phase shifter 80. And a second drive circuit 210. A straight arrow in FIG. 29 indicates light input. A two-dimensional scan can be realized by independently controlling the first drive circuit 110 and the second drive circuit 210 provided separately. In this example, the first drive circuit 110 functions as one element of the first adjustment element, and the second drive circuit 210 functions as one element of the second adjustment element.

  As will be described later, the first drive circuit 110 changes (modulates) the refractive index or thickness of the optical waveguide layer 20 in each waveguide element 10 to change the angle of light emitted from the optical waveguide layer 20. . As will be described later, the second drive circuit 210 changes the phase of light propagating through the waveguide 20a by changing the refractive index of the waveguide 20a in each phase shifter 80. The optical branching device 90 may be configured by a waveguide through which light propagates by total reflection, or may be configured by a reflective waveguide similar to the waveguide element 10.

  In addition, after controlling the phase of each light branched by the optical splitter 90, each light may be introduced into the phase shifter 80. For this phase control, for example, a passive phase control structure by adjusting the length of the waveguide leading to the phase shifter 80 can be used. Alternatively, a phase shifter that can be controlled by an electric signal having the same function as the phase shifter 80 may be used. By such a method, for example, the phase may be adjusted before being introduced into the phase shifter 80 so that all phase shifters 80 are supplied with equiphase light. By such adjustment, the control of each phase shifter 80 by the second drive circuit 210 can be simplified.

FIG. 30 is a diagram schematically illustrating an example of a configuration in which the waveguide in the phase shifter 80 is connected to the optical waveguide layer 20 in the waveguide element 10 via another waveguide 85. The other waveguide 85 may be any of the first waveguides 1 described above. Further, the other waveguide 85 may be the waveguides 1 and 1 ′ shown in FIG. Each phase shifter 80 may have the same configuration as the phase shifter 80 shown in FIG. 28, or may have a different configuration. In FIG. 30, the phase shifter 80 is simply expressed using symbols φ _{0 to} φ ₅ representing the phase shift amount. Similar expressions may be used in the following figures. For the phase shifter 80, a waveguide that propagates light by using total reflection can be used. In that case, the mirrors 30a and 40a as shown in FIG. 28 are unnecessary.

  FIG. 31 is a diagram illustrating a configuration example in which a plurality of phase shifters 80 arranged in cascade in the optical splitter 90 are inserted. In this example, a plurality of phase shifters 80 are connected in the middle of the path of the optical branching device 90. Each phase shifter 80 gives a constant phase shift amount φ to the propagating light. By making the phase shift amount given to the propagation light by each phase shifter 80 constant, the phase difference between two adjacent waveguide elements 10 becomes equal. Therefore, the second adjustment element can send a common phase control signal to all the phase shifters 80. For this reason, there exists an advantage that a structure becomes easy.

A waveguide can be used to efficiently propagate light between the optical branching device 90, the phase shifter 80, the waveguide element 10, and the like. For the waveguide, an optical material having a higher refractive index than that of the surrounding material and less light absorption can be used. For example, materials such as Si, GaAs, GaN, SiO ₂ , TiO ₂ , Ta ₂ O ₅ , AlN, and SiN can be used. Further, any of the first waveguides 1 described above may be used to propagate light from the optical branching device 90 to the waveguide element 10. In order to propagate light from the optical branching device 90 to the waveguide element 10, the waveguides 1 and 1 'shown in FIG. 14 may be used.

  The phase shifter 80 requires a mechanism for changing the optical path length in order to give a phase difference to the light. In order to change the optical path length, in this embodiment, the refractive index of the waveguide in the phase shifter 80 is modulated. Thereby, the phase difference of the light supplied to the waveguide element 10 from two adjacent phase shifters 80 can be adjusted. More specifically, the phase shift can be given by performing refractive index modulation of the phase shift material in the waveguide of the phase shifter 80. A specific example of a configuration that performs refractive index modulation will be described later.

<Example of first adjusting element>
Next, a configuration example of the first adjustment element that adjusts the refractive index or thickness of the optical waveguide layer 20 in the waveguide element 10 will be described. First, a configuration example for adjusting the refractive index will be described.

  FIG. 32A is a perspective view schematically showing an example of the configuration of the first adjustment element 60 (hereinafter sometimes simply referred to as an adjustment element). In the example shown in FIG. 32A, an adjustment element 60 having a pair of electrodes 62 is incorporated in the waveguide element 10. The optical waveguide layer 20 is sandwiched between a pair of electrodes 62. The optical waveguide layer 20 and the pair of electrodes 62 are provided between the first mirror 30 and the second mirror 40. The entire side surface (surface parallel to the XZ plane) of the optical waveguide layer 20 is in contact with the electrode 62. The optical waveguide layer 20 includes a refractive index modulation material that changes a refractive index with respect to light propagating through the optical waveguide layer 20 when a voltage is applied. The adjustment element 60 further includes a wiring 64 drawn from the pair of electrodes 62 and a power source 66 connected to the wiring 64. The refractive index of the optical waveguide layer 20 can be modulated by turning on the power supply 66 and applying a voltage to the pair of electrodes 62 through the wiring 64. For this reason, the adjustment element 60 can also be called a refractive index modulation element.

  FIG. 32B is a perspective view schematically showing another configuration example of the first adjustment element 60. In this example, only a part of the side surface of the optical waveguide layer 20 is in contact with the electrode 62. The other points are the same as the configuration shown in FIG. 32A. Thus, even if it is the structure which changes the refractive index of the optical waveguide layer 20 partially, the direction of emitted light can be changed.

  FIG. 32C is a perspective view schematically showing still another configuration example of the first adjustment element 60. In this example, the pair of electrodes 62 has a layered shape substantially parallel to the reflecting surfaces of the mirrors 30 and 40. One electrode 62 is sandwiched between the first mirror 30 and the optical waveguide layer 20. The other electrode 62 is sandwiched between the second mirror 40 and the optical waveguide layer 20. When such a configuration is employed, a transparent electrode can be used as the electrode 62. According to such a configuration, there is an advantage that manufacture is relatively easy.

  In the example shown in FIGS. 32A to 32C, the optical waveguide layer 20 in each waveguide element 10 includes a material whose refractive index for light propagating through the optical waveguide layer 20 changes when a voltage is applied. The first adjustment element 60 has a pair of electrodes 62 sandwiching the optical waveguide layer 20, and changes the refractive index of the optical waveguide layer 20 by applying a voltage to the pair of electrodes 62. The application of the voltage can be performed by the first driving circuit 110 described above.

  Here, the example of the material which can be used for each component is demonstrated.

As a material of the mirrors 30, 40, 30a, and 40a, for example, a multilayer film made of a dielectric can be used. A mirror using a multilayer film can be produced, for example, by periodically forming a plurality of films each having an optical thickness of ¼ wavelength and having different refractive indexes. According to such a multilayer mirror, a high reflectance can be obtained. As the material of the film, for example, SiO ₂ , TiO ₂ , Ta ₂ O ₅ , Si, SiN or the like can be used. Each mirror is not limited to a multilayer mirror, and may be formed of a metal such as Ag or Al.

  Various materials having conductivity can be used for the electrode 62 and the wiring 64. For example, metallic materials such as Ag, Cu, Au, Al, Pt, Ta, W, Ti, Rh, Ru, Ni, Mo, Cr, Pd, or ITO, tin oxide, zinc oxide, IZO (registered trademark), SRO Inorganic compounds such as, or conductive materials such as conductive polymers such as PEDOT and polyaniline can be used.

As the material of the optical waveguide layer 20, various light-transmitting materials such as a dielectric, a semiconductor, an electro-optic material, and liquid crystal molecules can be used. The dielectric, eg _{SiO 2, TiO 2, Ta 2} O 5, SiN, include AlN. Examples of the semiconductor material include Si-based materials, GaAs-based materials, and GaN-based materials. Examples of the electro-optic material include lithium niobate (LiNbO ₃ ), barium titanate (BaTi ₃ ), lithium tantalate (LiTaO ₃ ), zinc oxide (ZnO), lead lanthanum zirconate titanate (PLZT), and tantalate. Examples thereof include potassium niobate (KTN).

  Examples of a method for modulating the refractive index of the optical waveguide layer 20 include a method using a carrier injection effect, an electro-optic effect, a birefringence effect, or a thermo-optic effect. Hereinafter, examples of each method will be described.

The method using the carrier injection effect can be realized by a configuration using a semiconductor pin junction. In this method, a structure in which a semiconductor having a low doping concentration is sandwiched between a p-type semiconductor and an n-type semiconductor is used, and the refractive index is modulated by injecting carriers into the semiconductor. In this configuration, the optical waveguide layer 20 in each waveguide element 10 includes a semiconductor material. One of the pair of electrodes 62 may include a p-type semiconductor, and the other may include an n-type semiconductor. The first adjustment element 60 applies a voltage to the pair of electrodes 62 to inject carriers into the semiconductor material and change the refractive index of the optical waveguide layer 20. The optical waveguide layer 20 may be made of a non-doped or lightly doped semiconductor, and a p-type semiconductor and an n-type semiconductor may be provided so as to be in contact therewith. A ply semiconductor and an n type semiconductor may be disposed so as to be in contact with a lightly doped semiconductor, and a composite structure may be employed in which a conductive material is in contact with the p type semiconductor and the n type semiconductor. For example, when carriers of about 10 ²⁰ cm ⁻³ are injected into Si, the refractive index of Si changes by about 0.1 (for example, “Free charge carrier indexed modulation of crystalline silicon” 7 ^th IE Photonics, P102-104, 1-3 Sept. 2010). When this method is employed, a p-type semiconductor and an n-type semiconductor can be used as the material of the pair of electrodes 62 in FIGS. 32A to 32C. Alternatively, the pair of electrodes 62 may be made of metal, and a layer between the electrode 62 and the optical waveguide layer 20 or the optical waveguide layer 20 itself may include a p-type or n-type semiconductor.

The method using the electro-optic effect can be realized by applying an electric field to the optical waveguide layer 20 containing the electro-optic material. In particular, if KTN is used as the electro-optic material, a large electro-optic effect can be obtained. KTN can use this effect because the relative permittivity rises significantly at a temperature slightly higher than the phase transition temperature from tetragonal to cubic. For example, “Low-Driving-Voltage Electro-Optic Modulator With Novel KTa1-xNbxO3 Crystal Waveguides” Jpn. J. et al. Appl. Phys. , Vol. 43, no. According to 8B (2004), an electro-optic constant g = 4.8 × 10 ⁻¹⁵ m ² / V ² is obtained for light having a wavelength of 1.55 μm. Thus, for example, application of an electric field of 2 kV / mm, a refractive index of ^{0.1 (= gn 3 E 3/} 2) to a degree varies. As described above, in the configuration using the electro-optic effect, the optical waveguide layer 20 in each waveguide element 10 includes an electro-optic material such as KTN. The first adjustment element 60 changes the refractive index of the electro-optic material by applying a voltage to the pair of electrodes 62.

  In the method using the birefringence effect by the liquid crystal, the refractive index anisotropy of the liquid crystal can be changed by driving the optical waveguide layer 20 containing the liquid crystal material with the electrode 62. Thereby, the refractive index with respect to the light propagating through the optical waveguide layer 20 can be modulated. Since the liquid crystal generally has a birefringence difference of about 0.1 to 0.2, a change in refractive index equivalent to the birefringence difference can be obtained by changing the alignment direction of the liquid crystal with an electric field. Thus, in the configuration using the birefringence effect of liquid crystal, the optical waveguide layer 20 in each waveguide element 10 includes a liquid crystal material. The first adjustment element 60 changes the refractive index anisotropy of the liquid crystal material and changes the refractive index of the optical waveguide layer 20 by applying a voltage to the pair of electrodes 62.

  The thermo-optic effect is an effect in which the refractive index changes as the temperature of the material changes. In order to drive by the thermo-optic effect, the refractive index may be modulated by heating the optical waveguide layer 20 containing the thermo-optic material.

  FIG. 33 is a diagram illustrating an example of a configuration in which the adjustment element 60 including the heater 68 made of a material having high electrical resistance and the waveguide element 10 are combined. The heater 68 may be disposed in the vicinity of the optical waveguide layer 20. Heating can be performed by turning on the power supply 66 and applying a voltage to the heater 68 through the wiring 64 containing a conductive material. The heater 68 may be brought into contact with the optical waveguide layer 20. In the present configuration example, the optical waveguide layer 20 in each waveguide element 10 includes a thermo-optic material whose refractive index changes with temperature change. The first adjustment element 60 includes a heater 68 disposed in contact with the optical waveguide layer 20 or in the vicinity of the optical waveguide layer 20. The first adjustment element 60 changes the refractive index of the optical waveguide layer 20 by heating the thermo-optic material with the heater 68.

  The optical waveguide layer 20 itself may be made of a high electrical resistance material, and the optical waveguide layer 20 may be directly sandwiched between a pair of electrodes 62 and heated by applying a voltage. In this case, the first adjustment element 60 includes a pair of electrodes 62 that sandwich the optical waveguide layer 20. The first adjustment element 60 changes the refractive index of the optical waveguide layer 20 by applying a voltage to the pair of electrodes 62 to heat the thermo-optic material (for example, high electrical resistance material) in the optical waveguide layer 20.

As the high electrical resistance material used for the heater 68 or the optical waveguide layer 20, a semiconductor or a metal material having a high resistivity can be used. For example, Si, GaAs, GaN, or the like can be used as the semiconductor. In addition, as the metal having high resistivity, iron, nickel, copper, manganese, chromium, aluminum, silver, gold, platinum, or an alloy in which these materials are combined can be used. For example, the temperature dependence dn / dT of the refractive index of Si for light having a wavelength of 1500 nm is 1.87 × 10 ⁻⁴ (K ⁻¹ ) (“Temperature-dependent index of silicon and germanium”, Proc. SPIE 6273). , Optomechanical Technologies for Astronomy, 62732J). Therefore, when the temperature is changed by 500 ° C., the refractive index can be changed by about 0.1. If a heater 68 is provided in the vicinity of the optical waveguide layer 20 and locally heated, even a large temperature change of 500 ° can be performed at a relatively high speed.

  The response speed of the refractive index change due to carrier injection is determined by the lifetime of the carrier. Generally, since the carrier lifetime is on the order of nanoseconds (ns), a response speed of about 100 MHz to 1 GHz can be obtained.

When an electro-optic material is used, a refractive index change is caused by applying an electric field to induce polarization of electrons. In general, the rate of inducing polarization is extremely high, and materials such as LiNbO ₃ and LiTaO ₃ have a response time on the order of femtoseconds (fs), so that high-speed driving exceeding 1 GHz is possible.

  When a thermo-optic material is used, the response speed of the refractive index change is determined by the temperature increase / decrease speed. A rapid temperature increase can be obtained by locally heating only the vicinity of the waveguide. Moreover, if the heater is turned off while the temperature is locally raised, the temperature can be drastically lowered by dissipating heat to the periphery. If it is fast, a response speed of about 100 KHz can be obtained.

  In the above example, the first adjustment element 60 changes the X component of the wave number vector of the emitted light by simultaneously changing the refractive index of each optical waveguide layer 20 by a certain value. In the refractive index modulation, the amount of modulation depends on the characteristics of the material, and in order to obtain a large amount of modulation, it is necessary to apply a high electric field or align the liquid crystal. On the other hand, the direction of light emitted from the waveguide element 10 also depends on the distance between the mirror 30 and the mirror 40. Therefore, the thickness of the optical waveguide layer 20 may be changed by changing the distance between the mirror 30 and the mirror 40. Hereinafter, an example of a configuration in which the thickness of the optical waveguide layer 20 is changed will be described.

  In order to change the thickness of the optical waveguide layer 20, the optical waveguide layer 20 can be made of an easily deformable material such as gas or liquid. The thickness of the optical waveguide layer 20 can be changed by moving at least one of the mirrors 30 and 40 sandwiching the optical waveguide layer 20. At this time, in order to maintain the parallelism between the upper and lower mirrors 30 and 40, a configuration that minimizes deformation of the mirror 30 or 40 may be employed.

  FIG. 34 is a diagram showing a configuration example in which the mirror 30 is held by a support member 70 made of a material that is easily deformed. The support member 70 may include a thin member or a thin frame that is more easily deformed than the mirror 30. In this example, the first adjustment element has an actuator connected to the first mirror 30 in each waveguide element 10. The actuator changes the thickness of the optical waveguide layer 20 by changing the distance between the first mirror 30 and the second mirror 40. The actuator can be connected to at least one of the first mirror 30 and the second mirror 40. As an actuator for driving the mirror 30, for example, various actuators using electrostatic force, electromagnetic induction, piezoelectric material, shape memory alloy, or heat can be used.

  In the configuration using the electrostatic force, the actuator in the first adjustment element moves the mirrors 30 and / or 40 using an attractive force or a repulsive force between the electrodes generated by the electrostatic force. Hereinafter, some examples of such a configuration will be described.

  FIG. 35 is a diagram illustrating an example of a configuration in which the mirrors 30 and / or 40 are moved by the electrostatic force generated between the electrodes. In this example, a translucent electrode 62 (for example, a transparent electrode) is provided between the mirror 30 and the optical waveguide layer 20 and between the mirror 40 and the optical waveguide layer 20. Each of the support members 70 disposed on both sides of the mirror 30 has one end fixed to the mirror 30 and the other end fixed to a housing (not shown). By applying positive and negative voltages to the pair of electrodes 62, an attractive force is generated and the distance between the mirror 30 and the mirror 40 is reduced. When the voltage application is stopped, the restoring force of the support member 70 that holds the mirror is generated, and the distance between the mirror 30 and the mirror 40 is restored to the original length. The electrode 62 that generates such attractive force does not need to be provided on the entire mirror surface. The actuator in this example has a pair of electrodes 62, one of the pair of electrodes 62 is fixed to the first mirror 30, and the other of the pair of electrodes 62 is fixed to the second mirror 40. The actuator applies a voltage to the pair of electrodes 62 to generate an electrostatic force between the electrodes, thereby changing the distance between the first mirror 30 and the second mirror 40. The application of voltage to the electrode 62 is performed by the first drive circuit 110 (for example, FIG. 29) described above.

  FIG. 36 is a diagram illustrating a configuration example in which the electrode 62 that generates an attractive force is disposed at a position that does not hinder the propagation of light. In this example, the electrode 62 need not be transparent. As shown in the drawing, the electrode 62 fixed to each of the mirrors 30 and 40 does not have to be single, and may be divided. By measuring the capacitance of a part of the divided electrodes, feedback control such as measuring the distance between the mirror 30 and the mirror 40 and adjusting the parallelism of the mirror 30 and the mirror 40 can be performed. .

  Instead of using the electrostatic force between the electrodes, the mirrors 30 and / or 40 may be driven using electromagnetic induction that generates an attractive or repulsive force on the magnetic body in the coil.

  In an actuator using a piezoelectric material, a shape memory alloy, or thermal deformation, a phenomenon in which the material is deformed by energy applied from the outside is used. For example, lead zirconate titanate (PZT), which is a typical piezoelectric material, expands and contracts by applying an electric field in the polarization direction. The distance between the mirror 30 and the mirror 40 can be directly changed by this piezoelectric material. However, since the piezoelectric constant of PZT is about 100 pm / V, for example, even when an electric field of 1 V / μm is applied, the displacement is as small as about 0.01%. For this reason, when such a piezoelectric material is used, a sufficient mirror moving distance cannot be obtained. Therefore, the amount of change can be increased using a configuration called a unimorph or bimorph.

  FIG. 37 is a diagram illustrating an example of the piezoelectric element 72 including a piezoelectric material. The arrow indicates the displacement direction of the piezoelectric element 72, and the size of the arrow indicates the amount of displacement. As shown in FIG. 37, since the displacement amount of the piezoelectric element 72 depends on the length of the material, the displacement amount in the plane direction is larger than the displacement amount in the thickness direction.

  FIG. 38A is a diagram showing a configuration example of a support member 74a having a unimorph structure using the piezoelectric element 72 shown in FIG. The support member 74a has a structure in which one layer of piezoelectric elements 72 and one layer of non-piezoelectric elements 71 are laminated. The distance between the mirror 30 and the mirror 40 can be changed by fixing and deforming the support member 74a to at least one of the mirrors 30 and 40.

  FIG. 38B is a diagram illustrating an example of a state in which the support member 74 a is deformed by applying a voltage to the piezoelectric element 72. When a voltage is applied to the piezoelectric element 72, only the piezoelectric element 72 extends in the surface direction, so that the entire support member 74a bends. For this reason, compared with the case where there is no non-piezoelectric element 71, the amount of displacement can be increased.

  FIG. 39A is a diagram showing a configuration example of a support member 74b having a bimorph structure using the piezoelectric element 72 shown in FIG. The support member 74b has a structure in which two layers of piezoelectric elements 72 and one layer of non-piezoelectric elements 71 therebetween are stacked. The distance between the mirror 30 and the mirror 40 can be changed by fixing and deforming the support member 74b to at least one of the mirrors 30 and 40.

  FIG. 39B is a diagram illustrating an example of a state in which the support member 74a is deformed by applying a voltage to the piezoelectric elements 72 on both sides. In the bimorph, the upper and lower piezoelectric elements 72 have opposite displacement directions. Therefore, when the bimorph configuration is used, the amount of displacement can be further increased as compared with the unimorph configuration.

  FIG. 40 is a diagram illustrating an example of an actuator in which the support member 74a illustrated in FIG. 38A is disposed on both sides of the mirror 30. The distance between the mirror 30 and the mirror 40 can be changed by deforming the support member 74a so that the beam is deflected by such a piezoelectric actuator. Instead of the support member 74a shown in FIG. 38A, a support member 74b shown in FIG. 39A may be used.

  Since the unimorph type actuator is deformed in an arc shape, as shown in FIG. 41A, an inclination is generated at the tip that is not fixed. Therefore, when the rigidity of the mirror 30 is low, it is difficult to hold the mirror 30 and the mirror 40 in parallel. Therefore, as shown in FIG. 41B, two unimorph-type support members 74a having different expansion and contraction directions may be connected in series. In the example of FIG. 41B, in the support member 74a, the bending direction is opposite between the expanding and contracting region and the extending region. As a result, it is possible to prevent the tip on the non-fixed side from being inclined. By using such a support member 74a, the mirrors 30 and 40 can be prevented from tilting.

  Similarly to the above, it is possible to realize a beam structure that is flexibly deformed by bonding materials having different thermal expansion coefficients. Furthermore, the beam structure can be realized with a shape memory alloy. Either can be used to adjust the distance between the mirror 30 and the mirror 40.

  It is also possible to change the distance between the mirror 30 and the mirror 40 by making the optical waveguide layer 20 a sealed space and changing the volume of the optical waveguide layer 20 by taking in or taking out the internal air or liquid with a small pump or the like. is there.

  As described above, the actuator in the first adjustment element can change the thickness of the optical waveguide layer 20 by various structures. Such a change in thickness may be performed individually for each of the plurality of waveguide elements 10 or may be performed uniformly for all the waveguide elements 10. In particular, when the structures of the plurality of waveguide elements 10 are all the same, the distance between the mirror 30 and the mirror 40 in each waveguide element 10 is controlled to be constant. For this reason, one actuator can drive all the waveguide elements 10 collectively.

  FIG. 42 is a diagram illustrating an example of a configuration in which a support member (that is, an auxiliary substrate) 52 that holds a plurality of first mirrors 30 is collectively driven by an actuator. In FIG. 42, the second mirror 40 is a single plate-like mirror. The mirror 40 may be divided into a plurality of mirrors as in the above-described embodiment. The support member 52 is made of a light-transmitting material, and a unimorph type piezoelectric actuator is provided on both sides.

  FIG. 43 is a diagram illustrating a configuration example in which the first mirror 30 in the plurality of waveguide elements 10 is a single plate-shaped mirror. In this example, the second mirror 40 is divided for each waveguide element 10. As in the example of FIGS. 42 and 43, at least one of the mirrors 30 and 40 in each waveguide element 10 may be a part of one plate-like mirror. The actuator may change the distance between the mirror 30 and the mirror 40 by moving the plate-like mirror.

<Refractive index modulation for phase shift>
Next, a configuration for phase adjustment in the plurality of phase shifters 80 by the second adjustment element will be described. The phase adjustment in the plurality of phase shifters 80 can be realized by changing the refractive index of the waveguide 20a in the phase shifter 80. The adjustment of the refractive index can be realized by the same method as the method for adjusting the refractive index of the optical waveguide layer 20 in each waveguide element 10 described above. For example, the configuration and method of refractive index modulation described with reference to FIGS. 32A to 33 can be applied as they are. 32A to 33, the waveguide element 10 is read as the phase shifter 80, the first adjustment element 60 is read as the second adjustment element, the optical waveguide layer 20 is read as the waveguide 20a, and the first drive circuit 110 is changed. This is read as the second drive circuit 210. Therefore, a detailed description of the refractive index modulation in the phase shifter 80 is omitted.

  The waveguide 20a in each phase shifter 80 includes a material whose refractive index changes in response to voltage application or temperature change. The second adjustment element changes the refractive index in the waveguide 20a by applying a voltage to the waveguide 20a in each phase shifter 80 or changing the temperature of the waveguide 20a. Accordingly, the second adjustment element can change the phase difference of light propagating from the plurality of phase shifters 80 to the plurality of waveguide elements 10.

  Each phase shifter 80 can be configured to allow a phase shift of at least 2π before light passes through. When the amount of change in the refractive index per unit length of the waveguide 20a in the phase shifter 80 is small, the length of the waveguide 20a may be increased. For example, the size of the phase shifter 80 may be several hundred micrometers (μm) to several millimeters (mm), and in some cases, more. On the other hand, the length of each waveguide element 10 can be a value of about several tens of μm to several tens of mm, for example.

<Configuration for synchronous drive>
In the present embodiment, the first adjustment element drives each waveguide element 10 so that the directions of light emitted from the plurality of waveguide elements 10 are aligned. In order to align the direction of the light emitted from the plurality of waveguide elements 10, for example, each waveguide element 10 is provided with a drive unit, and these drive units are driven synchronously.

  FIG. 44 is a diagram illustrating an example of a configuration in which the wiring 64 is commonly extracted from the electrode 62 of each waveguide element 10. FIG. 45 is a diagram illustrating an example of a configuration in which some of the electrodes 62 and the wirings 64 are shared. FIG. 46 is a diagram illustrating an example of a configuration in which a common electrode 62 is disposed for a plurality of waveguide elements 10. 44 to 46, straight arrows indicate light input. With the configuration shown in these drawings, the wiring for driving the waveguide array 10A can be simplified.

  According to the configuration of this embodiment, light can be scanned two-dimensionally with a simple device configuration. For example, when a waveguide array composed of N waveguide elements 10 is synchronously driven, N drive circuits are required if independent drive circuits are provided. However, it is possible to operate with a single drive circuit if the electrode or wiring is shared as described above.

  In the case where the phase shifter array 80A is provided in front of the waveguide array 10A, N drive circuits are further required to move each phase shifter 80 independently. However, by arranging the phase shifters 80 in a cascade manner as in the example of FIG. 31, even one drive circuit can be operated. That is, in the configuration of the present disclosure, an operation of scanning light two-dimensionally can be realized with two to 2N drive circuits. Further, since the waveguide array 10A and the phase shifter array 80A may be operated independently, they can be easily pulled out without interfering with each other.

<Manufacturing method>
The waveguide array, the phase shifter array 80A, and the waveguide connecting them can be manufactured by a process capable of high-precision microfabrication, such as a semiconductor process, a 3D printer, self-assembly, and nanoimprint. With these processes, it is possible to integrate necessary elements in a small area.

In particular, if a semiconductor process is used, there are advantages that processing accuracy is extremely high and mass productivity is high. When a semiconductor process is used, various materials can be formed on the substrate by vapor deposition, sputtering, CVD, coating, or the like. Furthermore, fine processing is possible by photolithography and etching processes. As the material of the substrate, for example, Si, SiO ₂ , Al ₂ O ₂ , AlN, SiC, GaAs, GaN, or the like can be used.

<Modification>
Then, the modification of this embodiment is demonstrated.

  FIG. 47 is a diagram schematically showing an example of a configuration in which a large area for arranging the phase shifter array 80A is secured and the waveguide array is integrated small. According to such a configuration, a sufficient amount of phase shift can be ensured even when only a small refractive index change occurs in the material constituting the waveguide of the phase shifter 80. Further, when the phase shifter 80 is driven by heat, the interval can be widened, so that the influence on the adjacent phase shifter 80 can be reduced.

  FIG. 48 is a diagram showing a configuration example in which two phase shifter arrays 80Aa and 80Ab are arranged on both sides of the waveguide array 10A. In this example, the optical scanning device 100 has two optical branching devices 90a and 90b and two phase shifter arrays 80Aa and 80Ab on both sides of the waveguide array 10A. In FIG. 48, straight arrows indicated by dotted lines indicate light propagating through the optical branching devices 90a and 90b and the phase shifters 80a and 80b. The phase shifter array 80Aa and the optical branching device 90a are connected to one side of the waveguide array 10A, and the phase shifter array 80Ab and the optical branching device 90b are provided on the other side of the waveguide array 10A. The optical scanning device 100 further includes an optical switch 92 that switches between supply of light to the optical branching device 90a and supply of light to the optical branching device 90b. By switching the optical switch 92, it is possible to switch between a state in which light is input to the waveguide array 10A from the left side in FIG. 48 and a state in which light is input to the waveguide array 10A from the right side in FIG.

  According to the configuration of this modification, there is an advantage that the scan range in the X direction of the light emitted from the waveguide array 10A can be expanded. In the configuration in which light is input from one side to the waveguide array 10A, the direction of the light is changed from the front direction (ie, + Z direction) to either the + X direction or the -X direction by driving each waveguide element 10. Can be scanned along. On the other hand, in this modification, when light is input from the left optical branching device 90a in FIG. 48, light can be scanned from the front direction along the + X direction. On the other hand, when light is input from the right optical splitter 90b, the light can be scanned from the front direction to the -X direction. That is, in the configuration of FIG. 48, light can be scanned in both the left and right directions in FIG. 48 when viewed from the front. For this reason, compared with the structure which inputs light from one side, the scanning angle range can be widened. The optical switch 92 is controlled by an electric signal from a control circuit (not shown) (for example, a microcontroller unit). According to this configuration example, it is possible to control the driving of all the elements with an electric signal.

  In the above description, only the waveguide array in which the arrangement direction of the waveguide elements 10 and the extending direction of the waveguide elements 10 are orthogonal to each other has been dealt with. However, these directions need not be orthogonal. For example, a configuration as shown in FIG. 49A may be used. FIG. 49A shows a configuration example of a waveguide array in which the arrangement direction d1 of the waveguide elements 10 and the direction d2 in which the waveguide elements 10 extend are not orthogonal to each other. In this example, the light emitting surface of each waveguide element 10 may not be in the same plane. Even with such a configuration, the light emitting direction d3 can be changed two-dimensionally by appropriately controlling each waveguide element 10 and each phase shifter.

  FIG. 49B shows a configuration example of a waveguide array in which the arrangement interval of the waveguide elements 10 is not constant. Even when such a configuration is adopted, two-dimensional scanning can be performed by appropriately setting the phase shift amount by each phase shifter. 49B also, the arrangement direction d1 of the waveguide array and the extending direction d2 of each waveguide element 10 do not have to be orthogonal to each other.

<Embodiment in which first and second waveguides are arranged on a substrate>
Next, an embodiment of an optical scanning device in which first and second waveguides are arranged on a substrate will be described.

  The optical scanning device according to this embodiment includes a first waveguide, a second waveguide connected to the first waveguide, and a substrate that supports the first and second waveguides. More specifically, the optical scanning device includes a plurality of waveguide units arranged in a first direction, and a substrate that supports the plurality of waveguide units. Each of the plurality of waveguide units includes a first waveguide and a second waveguide. The second waveguide is connected to the first waveguide and propagates light in a second direction intersecting the first direction. The substrate supports the first waveguide and the second waveguide in each waveguide unit.

  The second waveguide corresponds to the reflective waveguide in the above-described embodiment. That is, the second waveguide includes a first mirror having a multilayer reflective film, a second mirror having a multilayer reflective film facing the multilayer reflective film of the first mirror, the first mirror, and the second mirror. And an optical waveguide layer for propagating light input to the first waveguide and propagating through the first waveguide. The first mirror has a higher light transmittance than the second mirror, and emits part of the light propagating in the optical waveguide layer to the outside of the optical waveguide layer. The optical scanning device further includes an adjustment element that changes the direction of light emitted from the second waveguide by changing at least one of the refractive index and the thickness of the optical waveguide layer in the second waveguide.

  According to the present embodiment, the first waveguide 1 and the second waveguide 10 can be easily aligned by arranging the first and second waveguides on one substrate. Further, displacement of the positions of the first and second waveguides due to thermal expansion is suppressed. As a result, light can be efficiently introduced from the first waveguide to the second waveguide.

  The optical waveguide layer may include a material whose refractive index changes with respect to light propagating through the optical waveguide layer, for example, when a voltage is applied. In this case, the adjustment element changes the refractive index of the optical waveguide layer by applying a voltage to the optical waveguide layer. Thereby, the adjustment element changes the direction of the light emitted from the second waveguide.

  At least a part of the first waveguide may have a function as the aforementioned phase shifter. In that case, a mechanism for modulating the refractive index is incorporated in the first waveguide, for example. The optical scanning device may include a second adjustment element that modulates the refractive index of at least a partial region of the first waveguide. The second adjustment element can be, for example, a heater disposed in the vicinity of the first waveguide. The refractive index of at least a part of the first waveguide can be changed by the heat generated from the heater. As a result, the phase of the light input from the first waveguide to the second waveguide is adjusted. As described above, there are various configurations for adjusting the phase of light input from the first waveguide to the second waveguide. Any of those configurations may be adopted.

  The phase shifter may be provided outside the first waveguide. In that case, the first waveguide is located between the external phase shifter and the waveguide element (second waveguide). There may be no clear boundary between the phase shifter and the first waveguide. For example, the phase shifter and the first waveguide may share components such as the waveguide and the substrate.

  The first waveguide may be a general waveguide that utilizes total reflection of light, or may be a reflective waveguide. The light whose phase is modulated is introduced into the second waveguide through the first waveguide.

  Hereinafter, an embodiment of the optical scanning device in which the first and second waveguides are arranged on the substrate will be described in more detail. In the following description, it is assumed that the optical scanning device includes a plurality of waveguide units. The optical scanning device may comprise a single waveguide unit. That is, an optical scanning device including only one combination of the first waveguide and the second waveguide is also included in the scope of the present disclosure.

  FIG. 50A is a diagram schematically illustrating an optical scanning device according to the present embodiment. This optical scanning device includes a plurality of waveguide units arranged in the Y direction and a substrate 50 that supports the plurality of waveguide units. Each waveguide unit includes a first waveguide 1 and a second waveguide 10. The substrate 50 supports the first waveguide 1 and the second waveguide 10 in each waveguide unit.

The substrate 50 extends along the XY plane. The upper surface and the lower surface of the substrate 50 are disposed substantially parallel to the XY plane. The substrate 50 may be configured using a material such as glass, Si, SiO ₂ , GaAs, or GaN, for example.

  The first waveguide array 1A includes a plurality of first waveguides 1 arranged in the Y direction. Each of the first waveguides 1 has a structure extending in the X direction. The second waveguide array 10A includes a plurality of second waveguides 10 arranged in the Y direction. Each of the second waveguides 10 has a structure extending in the X direction.

  50B is a cross-sectional view of the optical scanning device on the XZ plane indicated by one broken line in FIG. 50A. The first and second waveguides 1 and 10 are disposed on the substrate 50. The second mirror 40 extends in a region between the optical waveguide layer 20 and the substrate 50 and between the first waveguide 1 and the substrate 50. The first waveguide 1 is, for example, a general waveguide that uses total reflection of light. The general waveguide includes, for example, a semiconductor waveguide such as Si or GaAs. The second waveguide 10 has an optical waveguide layer 20 and first and second mirrors 30 and 40. The optical waveguide layer 20 is located between the first mirror 30 and the second mirror 40 facing each other. The optical waveguide layer 20 propagates light that has been input to the first waveguide and propagated through the first waveguide 1.

  The optical waveguide layer 20 in the present embodiment includes a material whose refractive index for light propagating through the optical waveguide layer 20 changes when a voltage is applied. The adjustment element has a pair of electrodes. The pair of electrodes includes a lower electrode 62a and an upper electrode 62b. The lower electrode 62 a is disposed between the optical waveguide layer 20 and the second mirror 40. The upper electrode 62 b is disposed between the optical waveguide layer 20 and the first mirror 30. The adjustment element in the present embodiment changes the refractive index of the optical waveguide layer 20 by applying a voltage to the pair of electrodes 62a and 62b. As a result, the adjustment element changes the direction of light emitted from the second waveguide 10. Each of the pair of electrodes 62a and 62b may be in contact with the optical waveguide layer 20 as illustrated, or may not be in contact.

  In the configuration example of FIG. 50B, another structure is arranged on a common support having the stacked substrate 50 and the second mirror 40. That is, on a single support body formed integrally, a laminate of the first waveguide 1 and the first electrode 62a, the optical waveguide layer 20, the second electrode 62b, and the first mirror 30 is formed. Is produced. Since a common support is used, alignment during the production of the first waveguide 1 and the optical waveguide layer 20 is facilitated. Further, the displacement of the connection portion between the first waveguide 1 and the optical waveguide layer 20 due to thermal expansion is suppressed. The support is, for example, a support substrate.

  FIG. 50C is a cross-sectional view of the optical scanning device in the YZ plane indicated by the other broken line in FIG. 50A. In this example, the second mirror 40 is shared by the plurality of second waveguides 10. That is, the second mirrors 40 in the plurality of second waveguides 10 are not separated from each other. Similarly, the lower electrode 62 a is also shared by the plurality of second waveguides 10. This simplifies the manufacturing process.

  On the other hand, the optical waveguide layer 20, the upper electrode 62b, and the first mirror 30 in the plurality of second waveguides 10 are disposed separately from each other. Thereby, each optical waveguide layer 20 can propagate light in the X direction. The upper electrode 62b and the first mirror 30 may not be separated.

  Hereinafter, modifications of the optical scanning device according to the present embodiment will be described. In the following modified examples, descriptions of overlapping components are omitted.

FIG. 51A is a diagram illustrating a configuration example in which a dielectric layer 51 is disposed between the second mirror 40 and the waveguide 1. The optical scanning device in this example further includes a dielectric layer 51 extending between the second mirror 40 and the first waveguide 1. The dielectric layer 51 functions as an adjustment layer that matches the height levels of the first waveguide 1 and the optical waveguide layer 20. Hereinafter, the dielectric layer 51 is referred to as the adjustment layer 51. By adjusting the thickness of the adjustment layer 51 in the Z direction, the coupling efficiency of light from the first waveguide 1 to the optical waveguide layer 20 can be increased. Further, the adjustment layer 51 serves as a spacer that prevents the guided light in the first waveguide 1 from being absorbed, scattered, or reflected by the second mirror 40. The first waveguide 1 propagates light by total reflection. Therefore, the adjustment layer 51 is made of a transparent material having a refractive index lower than that of the first waveguide 1. For example, the adjustment layer 51 can be formed of a dielectric material such as SiO ₂ .

  Another dielectric layer may be further disposed on the first waveguide 1 as a protective layer.

  FIG. 51B is a diagram illustrating a configuration example in which the second dielectric layer 61 is further disposed on the first waveguide 1. As described above, the optical scanning device may further include the second dielectric layer 61 that covers at least a part of the first waveguide 1. The second dielectric layer 61 is made of a transparent material that is in contact with the first waveguide 1 and has a refractive index lower than that of the first waveguide 1. The second dielectric layer 61 functions as a protective layer that prevents particles or dust from adhering to the first waveguide 1. Thereby, the loss of the guided light in the 1st waveguide 1 can be suppressed. Hereinafter, the second dielectric layer 61 is referred to as a protective layer 61.

  The first waveguide 1 shown in FIG. 51B functions as a phase shifter. The optical scanning device further includes a second adjustment element that changes the phase of light introduced into the optical waveguide layer 20 by modulating the refractive index of the first waveguide 1. When the first waveguide 1 includes a thermo-optic material, the second adjustment element includes a heater 68. The second adjustment element modulates the refractive index of the first waveguide 1 by heat generated from the heater 68.

  The wiring material such as metal contained in the heater 68 can absorb, scatter or reflect light. The protective layer 61 suppresses the loss of guided light in the first waveguide 1 by moving the first waveguide 1 and the heater 68 away from each other.

The protective layer 61 may be formed of the same material as the adjustment layer 51 (for example, SiO ₂ ). The protective layer 61 may cover not only the first waveguide 1 but also at least a part of the second waveguide 10. In that case, at least a part of the first mirror 30 is covered with the protective layer 61. The protective layer 61 may cover only the second waveguide 10. If the protective layer 61 is a transparent material, the light emitted from the second waveguide 10 passes through the protective layer 61. For this reason, the loss of light can be suppressed small.

  FIG. 52 is a diagram illustrating a configuration example in which the second mirror 40 is not disposed in the region between the first waveguide 1 and the substrate 50. The adjustment layer 51 in this example extends between the first waveguide 1 and the substrate 50. The adjustment layer 51 is in contact with the first waveguide 1 and the substrate 50. Since the second mirror 40 is not under the first waveguide 1, the guided light in the first waveguide 1 is not affected by the second mirror 40.

  FIG. 53 is a diagram illustrating a configuration example in which the second mirror 40 is thinner between the first waveguide 1 and the substrate 50 than the configuration example of FIG. 51B. As in this example, the second mirror 40 is thinner between the first waveguide 1 and the substrate 50 than the thickness of the second mirror 40 between the second waveguide 10 and the substrate 50. You may have a place. An adjustment layer 51 is disposed between the first waveguide 1 and the second mirror 40. With such a structure, the guided light in the first waveguide 1 is not easily affected by the second mirror 40. In the example of FIG. 53, the level difference generated by the second mirror 40 is small at the connection point between the first waveguide 1 and the optical waveguide layer 20 as compared with the example of FIG. Therefore, processing is easier.

  The thickness of the second mirror 40 may vary along the waveguide 1. Such an example will be described below.

  FIG. 54A is a diagram showing a configuration example in which the thickness of the second mirror 40 changes stepwise. Between the first waveguide 1 and the substrate 50, the thickness of the second mirror 40 varies along the first waveguide 1.

  In the example of FIG. 54A, the second mirror 40 does not exist under the left portion of the first waveguide 1. The left part of the first waveguide 1 is located lower than the optical waveguide layer 20. On the other hand, the second mirror 40 exists under the right portion of the first waveguide 1, that is, under the portion connected to the optical waveguide layer 20. The right portion of the first waveguide 1 is located at the same height as the optical waveguide layer 20. By adjusting the thickness of the protective layer 61, the upper surface of the protective layer 61 can be flattened.

  In the configuration example of FIG. 54A, the heater 68 disposed on the protective layer 61 is sufficiently separated from the first waveguide 1. Therefore, the guided light in the first waveguide 1 is not easily affected by the wiring of the heater 68. For this reason, the loss of guided light in the first waveguide 1 is suppressed.

  54B shows that the upper electrode 62b, the first mirror 30, and the second substrate 50C straddle over the protective layer 61 in the first waveguide 1 and the optical waveguide layer 20 in the second waveguide 10. It is a figure which shows the structural example arrange | positioned. 54C is a diagram showing a part of the manufacturing process of the configuration example of FIG. 54B.

  In the example of FIG. 54B, a structure including the upper electrode 62b, the first mirror 30, and the second substrate 50C (hereinafter referred to as “upper structure”), and a structure below the upper electrode 62b ( Hereinafter, it is referred to as “lower structure”).

  For manufacturing the lower structure, first, the second mirror 40 having an inclination is formed on the first substrate 50. The adjustment layer 51, the layer of the waveguide 1, and the protective layer 61 are formed in this order in a portion including the inclination in the second mirror 40. The lower electrode 62 a and the optical waveguide layer 20 are formed on the flat portion of the second mirror 40.

  The upper structure is manufactured by stacking the first mirror 30 and the upper electrode 62b in this order on the second substrate 50C. As shown in FIG. 54C, the upper structure is turned upside down and pasted on the lower structure. According to the manufacturing method described above, precise alignment of the first waveguide 1 and the second waveguide 10 can be eliminated.

  The upper surface of the protective layer 61, that is, the surface opposite to the surface in contact with the first waveguide 1 is lower than the upper surface of the optical waveguide layer 20 in the second waveguide 10. The upper surface of the heater 68 in the first waveguide 1 is substantially the same height as the upper surface of the optical waveguide layer 20 in the second waveguide 10. In this case, the upper structure and the lower structure can be bonded together without any step. The superstructure may be formed by a method such as vapor deposition or sputtering.

FIG. 55 is a view showing a YZ plane cross section of a plurality of second waveguides 10 in the optical scanning device having the structure shown in FIG. 54B. In this example, the first mirror 30, the second mirror 40, and the electrodes 62 a and 62 b are shared by the plurality of second waveguides 10. A plurality of optical waveguide layers 20 are disposed between the common electrodes 62a and 62b. A region between the plurality of optical waveguide layers 20 is a spacer 73. The spacer 73 is a transparent material such as air (or vacuum), SiO ₂ , TiO ₂ , Ta ₂ O ₅ , SiN, or AlN. If the spacer 73 is a solid material, the upper structure can be formed by a method such as vapor deposition or sputtering. The spacer 73 may be in direct contact with both of the adjacent optical waveguide layers 20.

  The first waveguide 1 does not need to be a general waveguide that utilizes total reflection of light. For example, the first waveguide 1 may be a reflective waveguide similar to the second waveguide 10.

  FIG. 56 is a diagram illustrating a configuration example in which the first waveguide 1 and the second waveguide 10 are reflective waveguides. The first waveguide 1 is sandwiched between two opposing multilayer reflective films 3 and 40. The first waveguide 1 propagates light on the same principle as the second waveguide 10. If the thickness of the multilayer reflective film 3 is sufficiently large, no light is emitted from the first waveguide 1.

  In the configuration example of FIG. 56, the light coupling efficiency can be increased by optimizing the connection conditions of the two reflective waveguides as described with reference to FIGS. By such optimization, light can be efficiently introduced from the first waveguide 1 to the second waveguide 10.

  Next, a modified example of the arrangement of the pair of electrodes 62a and 62b will be described. In the example of FIGS. 50A to 56, the pair of electrodes 62 a and 62 b are in contact with the optical waveguide layer 20 in the second waveguide 10. In the example of FIGS. 50C and 55, one or both of the electrodes 62 a and 62 b are shared by the plurality of second waveguides 10. The configuration of the electrodes 62a and 62b is not limited to such a configuration.

  FIG. 57 is a diagram illustrating a configuration example in which the upper electrode 62 b is disposed on the first mirror 30 and the lower electrode 62 a is disposed below the second mirror 40. The first mirror 30 is disposed between the upper electrode 62 b and the optical waveguide layer 20. The second mirror 40 is disposed between the lower electrode 62 a and the optical waveguide layer 20. As in this example, the pair of electrodes 62 a and 62 b may indirectly sandwich the optical waveguide layer 20 via the first and second mirrors 30 and 40.

  In the example of FIG. 57, the lower electrode 62a extends to the first waveguide 1 side. When the wiring is taken out from the lower electrode 62a, the space under the first waveguide 1 can be used. Therefore, the degree of freedom in wiring design increases.

  In this example, the pair of electrodes 62 a and 62 b are not in contact with the optical waveguide layer 20. The guided light in the optical waveguide layer 20 is not easily affected by absorption, scattering, or reflection by the pair of electrodes 62a and 62b. For this reason, the loss of the guided light in the optical waveguide layer 20 is suppressed.

  FIG. 58 is a cross-sectional view showing still another modification. In this example, the first waveguide 1 is separated into a first portion 1a and a second portion 1b. The first portion 1 a is at a relatively low position and is away from the second waveguide 10. The second portion 1 b is at a relatively high position and is connected to the optical waveguide layer 20 of the second waveguide 10. The first portion 1a and the second portion 1b have portions that overlap when viewed from the + Z direction. The first part 1a and the second part 1b extend substantially parallel to the X direction. In this example, the adjustment layer 51 is also separated into two parts 51a and 51b. The first portion 51a of the adjustment layer is disposed between the first portion 1a of the first waveguide and the lower electrode 62a. The second portion 51 b of the adjustment layer is disposed between the second portion 1 b of the first waveguide and the second mirror 40. The protective layer 61 is disposed on the first portion 1a and the second portion 1b of the first waveguide. A part of the first portion 1 a of the first waveguide and a part of the second portion 1 b of the first waveguide are opposed to each other with the protective layer 61 interposed therebetween. The arrangement of the electrodes 62a and 62b is the same as the arrangement in FIG.

  In the configuration shown in FIG. 58, the distance between the first portion 1a and the second portion 1b of the first waveguide, that is, the distance in the Z direction is not more than the wavelength of light in the waveguide. In this case, light can be propagated from the first portion 1a to the second portion 1b by evanescent coupling. In this example, unlike the example of FIG. 54A, it is not necessary to change the thickness of the second mirror 40 along the first waveguides 1a and 1b.

  FIG. 59 is a diagram illustrating a configuration example in which the electrode 62 is disposed between two adjacent optical waveguide layers 20. The adjustment element in this example has a plurality of electrodes 62, and positive and negative voltages (indicated by + and − in the drawing) are alternately applied to these electrodes 62. Thereby, an electric field in the horizontal direction in FIG. 59 can be generated inside each optical waveguide layer 20.

  In the example of FIG. 59, two electrodes 62 adjacent in the Y direction are in contact with at least a part of the optical waveguide layer 20 therebetween. The area of the contact region between the optical waveguide layer 20 and the electrode 62 is small. Therefore, even if the electrode 62 is a material that absorbs, scatters, or reflects light, the loss of guided light in the optical waveguide layer 20 can be suppressed.

  In the configuration example of FIGS. 50A to 59, the light used for scanning is emitted through the first mirror 30. The light used for scanning may be emitted through the second mirror 40.

  FIG. 60 is a diagram illustrating an example of a configuration in which the first mirror 30 is thick and the second mirror 40 is thin. In the example of FIG. 60, the light passes through the second mirror 40 and is emitted from the substrate 50 side. The substrate 50 in this example is made of a light-transmitting material. By using the light emitted from the substrate 50 for scanning, the degree of freedom in designing the optical scanning device is increased.

<Examination on mirror width>
FIG. 61 is a cross-sectional view of the optical scanning device in the YZ plane, schematically showing a configuration example of a waveguide array 10A in which a plurality of waveguide elements 10 are arranged in the Y direction in the present embodiment. In the configuration example of FIG. 61, the width of the first mirror 30 is longer than the width of the optical waveguide layer 20 in the Y direction. The second mirror 40 is shared by the plurality of waveguide elements 10. In other words, the second mirror 40 in each waveguide element 10 is a part of one connected mirror. The first mirror 30 has a portion protruding from the end face of the optical waveguide layer 20 in the Y direction. The dimension of the protruding portion in the Y direction is y1. The distance from the end face of the optical waveguide layer 20 in the Y direction is y. y = 0 corresponds to the end face of the optical waveguide layer 20.

When the guided light propagates in the optical waveguide layer 20 in the X direction, the evanescent light oozes out of the optical waveguide layer 20 in the Y direction. The light intensity I of the evanescent light in the Y direction is expressed by the following equation.

However, the light intensity of the evanescent light from the optical waveguide layer 20 is 1 / e of the light intensity of the evanescent light from the optical waveguide layer 20 at the end face of the optical waveguide layer 20 from the end face of the optical waveguide layer 20. the distance in the Y direction, when the _{y d, y d} satisfy the following equation.

I ₀ is the light intensity of the evanescent light at y = 0. The total reflection angle θ _in is shown in FIG. In y = _{y d,} the light intensity I of the evanescent light is to 1 / e of the _{I 0.} e is the base of the natural logarithm.

For simplicity, the guided light in the optical waveguide layer 20 is approximated as a light beam as shown in FIG. As shown in the configuration example of FIG. 61, when the first mirror 30 does not exist at y> y ₁ , light leakage or light loss (L _loss ) due to one reflection of guided light at y = 0 is as follows. It is expressed by the following formula.

As shown in Expression (4), in order to set the spread angle θ _{div of the} light emitted from the waveguide element 10 to 0.1 ° or less, the propagation length L in the X direction of the waveguide element 10 is 1 mm or more. It is desirable that At this time, assuming that the width of the optical waveguide layer 20 in the Y direction is a, the total number of reflections in the ± Y direction is 1000 / (a · tan θ _in ) or more in FIG. When a = 1 μm and θ _in = 45 °, the number of total reflections is 1000 times or more. When Expression (25) representing the light loss in one reflection is used, the light loss in β reflection is represented by the following expression.

FIG. 62 is a diagram showing the relationship between the ratio of optical loss (L ^(β) _loss ) and y ₁ when β = 1000. The vertical axis is the percentage of light loss, the horizontal axis is y _1. As shown in FIG. 62, for example, y ₁ ≧ 7y _d is satisfied in order to make the ratio of optical loss 50% or less. Similarly, in order to make the ratio of the optical loss 10% or less, for example, y ₁ ≧ 9y _d is satisfied. To the percentage of light loss to less than 1%, for example, _{y 1} ≧ 11y _d is satisfied.

As shown in equation (25), in principle, by increasing the y _1, it is possible to reduce light loss. However, the optical loss is not zero.

  FIG. 63 is a cross-sectional view of the optical scanning device in the YZ plane schematically showing another configuration example of the waveguide array 10A in which the waveguide elements 10 are arranged in the Y direction in the present embodiment. In the configuration example of FIG. 63, the first and second mirrors 30 and 40 are shared by a plurality of waveguide elements 10. In other words, the first mirror 30 in each waveguide element 10 is a part of one connected mirror, and the second mirror 40 in each waveguide element 10 is a part of one other connected mirror. It is. As a result, optical loss can be minimized in principle.

  Next, leakage of evanescent light from the optical waveguide layer 20 in the configuration examples of FIGS. 10 and 63 will be compared using numerical calculation.

64A is a diagram showing a calculation result of the electric field intensity distribution in the configuration example of FIG. FIG. 64B is a diagram showing a calculation result of the electric field intensity distribution in the configuration example of FIG. For numerical calculation, FemSim of Synopsys was used. 64A and 64B, the width of the optical waveguide layer 20 in the Y direction is 1.5 μm, the thickness of the optical waveguide layer 20 in the Z direction is 1 μm, and the wavelength of light is 1.55 μm. , N _w = 1.68 and n _low = 1.44. This combination of n _w and n _low corresponds to, for example, the case where the liquid crystal material included in the optical waveguide layer 20 is confined by the SiO ₂ spacer 73.

  As shown in FIG. 64A, it can be seen that evanescent light leaks from the region where the first mirror 30 does not exist in the configuration example of FIG. On the other hand, as shown in FIG. 64B, such leakage of evanescent light can be ignored in the configuration example of FIG. 64A and 64B, when the guided light propagates in the X direction, the light intensity of the guided light decreases due to light emission from the first mirror 30 and leakage of the evanescent light. When the propagation length of light in the X direction where the light intensity of the guided light is 1 / e is calculated, the propagation length of the light is 7.8 μm and 132 μm in FIGS. 64A and 64B, respectively.

  In the present embodiment, the spacer 73 may be composed of two or more different media.

FIG. 65 is a cross-sectional view of the optical scanning device in the YZ plane schematically showing a configuration example in which the spacer 73 includes spacers 73a and 73b having different refractive indexes in the present embodiment. 65, the refractive index n _low1 of the spacer 73a adjacent to the optical waveguide layer 20 is higher than the refractive index n _{low2 of the} spacer 73b not adjacent to the optical waveguide layer 20 (n _low1 > n _low2 ). For example, when the optical waveguide layer 20 includes a liquid crystal material, SiO ₂ may be used as the spacer 73a in order to confine the liquid crystal material. The spacer 73b may be air. If the refractive index n _low2 of the spacer 73b is low, the evanescent light oozes out from the optical waveguide layer 20 can be suppressed.

  FIG. 66 is a cross-sectional view of the optical scanning device in the YZ plane, schematically showing a configuration example of the waveguide element 10 in the modification of the present embodiment. In the configuration example of FIG. 66, the optical waveguide layer 20 has a trapezoidal cross section in the YZ plane. The first mirror 30 is disposed not only on the upper side of the optical waveguide layer 20 but also on the left and right sides. Thereby, leakage of light from the left and right sides of the optical waveguide layer 20 can be suppressed.

  Next, materials for the optical waveguide layer 20 and the spacer 73 will be described.

Figure 61, in the configuration example of FIGS. 63 and 65, the refractive index _{n low} refractive index _{n w} and the spacer 73 of the optical waveguide layer 20 _satisfies the relationship of _{n w>} n _low. That is, the spacer 73 includes a material having a refractive index lower than that of the optical waveguide layer 20. For example, when the optical waveguide layer 20 includes an electro-optical material, the spacer 73 may include a transparent material such as SiO ₂ , TiO ₂ , Ta ₂ O ₅ , SiN, AlN, or air. When the optical waveguide layer 20 includes a liquid crystal material, the spacer 73 may include SiO ₂ or air. By sandwiching the optical waveguide layer 20 between a pair of electrodes and applying a voltage, the refractive index of the optical waveguide layer 20 containing an electro-optic material or a liquid crystal material can be changed. Thereby, the emission angle of the light emitted from the first mirror 30 can be changed. The detailed driving method of the optical scanning device when the optical waveguide layer 20 includes a liquid crystal material or an electro-optical material is as described above.

The electro-optic material may be any of the following compounds.
· KDP _(KH 2 PO ₄₎ type crystals.. For _{example, KDP, ADP (NH 4 H} 2 PO 4), KDA (KH 2 AsO 4), RDA (RbH 2 PO 4), or ADA _(NH 4 _{H 2} AsO ₄ )
Cubic material: for example, KTN, BaTiO ₃ , SrTiO ₃ Pb ₃ MgNb ₂ O ₉ , GaAs, CdTe, or InAs
Tetragonal material: for example, LiNbO ₃ or LiTaO ₃
・ Zincblende type material, for example, ZnS, ZnSe, ZnTe, GaAs, or CuCl
Tungsten bronze type material: KLiNbO ₃ , SrBaNb ₂ O ₆ , KSrNbO, BaNaNbO, Ca ₂ Nb ₂ O ₇

The liquid crystal material can be, for example, a nematic liquid crystal. The molecular structure of the nematic liquid crystal is as follows.
R1-Ph1-R2-Ph2-R3

  Here, R1 represents any one selected from the group consisting of an amino group, a carbonyl group, a carboxyl, a cyano group, an amine group, a nitro group, a nitrile group, and an alkyl chain. R3 represents any one selected from the group consisting of an amino group, a carbonyl group, a carboxyl group, a cyano group, an amine group, a nitro group, a nitrile group, and an alkyl chain. Ph1 represents an aromatic group such as a phenyl group or a biphenyl group. Ph2 represents an aromatic group such as a phenyl group or a biphenyl group. R2 represents any one selected from the group consisting of a vinyl group, a carbonyl group, a carboxyl group, a diazo group, and an azoxy group.

The liquid crystal is not limited to nematic liquid crystal. For example, a smectic liquid crystal may be used. The liquid crystal may be, for example, a smectic C phase (SmC phase) among smectic liquid crystals. The smectic liquid crystal may be a smectic C phase (SmC phase), for example, a chiral smectic phase (SmC ^* phase) which is a ferroelectric liquid crystal having a chiral center (for example, asymmetric carbon) in a liquid crystal molecule.

The molecular structure of the SmC ^* phase is expressed as follows:

R1 and R4 are any one selected from the group consisting of an amino group, a carbonyl group, a carboxyl group, a cyano group, an amine group, a nitro group, a nitrile group, and an alkyl chain. Ph1 is an aromatic group such as a phenyl group or a biphenyl group. Ph2 is an aromatic group such as a phenyl group or a biphenyl group. R2 is any one selected from the group consisting of a vinyl group, a carbonyl group, a carboxyl group, a diazo group, and an azoxy group. Ch ^* represents a chiral center. The chiral center is typically carbon (C ^* ). R3 is any one selected from the group consisting of hydrogen, methyl group, amino group, carbonyl group, carboxyl group, cyano group, amine group, nitro group, nitrile group, and alkyl chain. R5 is any one selected from the group consisting of hydrogen, methyl group, amino group, carbonyl group, carboxyl group, cyano group, amine group, nitro group, nitrile group, and alkyl chain. R3, R4, and R5 are functional groups different from each other.

  The liquid crystal material may be a mixture of a plurality of liquid crystal molecules having different compositions. For example, a mixture of nematic liquid crystal molecules and smectic liquid crystal molecules may be used as the material of the optical waveguide layer 20.

  The configuration examples of FIGS. 63 and 65 may be formed by bonding the first mirror 30 and the other configuration. This facilitates manufacturing. If the spacer 73 is a solid material, the first mirror 30 may be formed by a method such as vapor deposition or sputtering.

  In the configuration examples of FIGS. 61, 63 and 65, the configuration of the first mirror 30 has been described on the assumption that the second mirror 40 is shared by the plurality of waveguide elements 10. Of course, the above discussion is also applicable to the second mirror 40. That is, in the Y direction, if the width of at least one of the first and second mirrors 30 and 40 is longer than the width of the optical waveguide layer 20, leakage of evanescent light from the optical waveguide layer 20 is suppressed. it can. As a result, a decrease in the amount of light used for optical scanning is suppressed.

<Study on optical waveguide layer and spacer>
Next, the optical waveguide layer 20 (hereinafter also referred to as “optical waveguide region 20”) and the spacer 73 (hereinafter referred to as “non-waveguide region 73”) between the first mirror 30 and the second mirror 40. The effect of the configuration of the above) on the waveguide mode will be described in detail. In the following description, “width” means a width in the Y direction, and “thickness” means a thickness in the Z direction.

  The configuration example of FIG. 63 is a calculation model of a guided mode. The parameters used for the calculation are as follows. The first mirror 30 is a multilayer reflective film in which 12 pairs of materials having a refractive index of 2.1 and materials having a refractive index of 1.45 are alternately stacked, and the second mirror 40 includes the same two materials. Is a multilayer reflective film in which 17 pairs are stacked. The thickness of the optical waveguide region 20 is h = 0.65 μm, and the refractive index of the optical waveguide region 20 is 1.6. The thickness of the non-waveguide region 73 is h = 0.65 μm, and the refractive index of the non-waveguide region 73 is 1.45. The wavelength of light is λ = 940 nm.

  The electric field distribution of the waveguide mode was calculated when the width of the non-waveguide region 73 was made sufficiently larger than the width of the optical waveguide region 20 and the width of the optical waveguide region 20 was changed. Thereby, the electric field distribution depending on the Y direction and the Z direction as shown in the examples of FIGS. 64A and 64B is obtained. By integrating the electric field distribution depending on the Y direction and the Z direction in the Z direction, the electric field distribution in the Y direction can be obtained. In order to calculate the dispersion σ of the electric field distribution in the Y direction, fitting using a Gaussian function was performed. In the case of a Gaussian function, there are 99.73% components in the range of −3σ ≦ Y ≦ 3σ. Therefore, the analysis was performed on the assumption that 6σ corresponds to the spread of the electric field distribution in the Y direction. Hereinafter, “expansion of electric field” means the expansion of an electric field of 6σ in the Y direction.

  FIG. 67 is a diagram showing the relationship between the width of the optical waveguide region 20 and the spread of the electric field. As shown in the example of FIG. 67, when the width of the optical waveguide region 20 is w = 3 μm or more, the spread of the electric field in the waveguide mode is smaller than the width of the optical waveguide region 20. When the width of the optical waveguide region 20 is w = 3 μm or less, the spread of the electric field in the waveguide mode is larger than the width of the optical waveguide region 20 and oozes out to the non-waveguide region 73.

  Next, the case where the non-waveguide region 73 includes a plurality of members will be described.

  FIG. 68 is a cross-sectional view of an optical scanning device schematically showing a configuration example of the optical waveguide region 20 and the non-waveguide region 73 in the present embodiment.

  The optical scanning device according to this embodiment includes first and second mirrors 30 and 40, two non-waveguide regions 73, an optical waveguide region 20, and a first adjusting element (not shown). The first mirror 30 is light transmissive, and the second mirror 40 faces the first mirror 30. The two non-waveguide regions 73 are arranged with a gap in the Y direction between the first and second mirrors 30 and 40. The Y direction is a direction parallel to at least one reflection surface of the first and second mirrors 30 and 40. The optical waveguide region 20 is located between the first and second mirrors 30 and 40 and between the two non-waveguide regions 73. The optical waveguide region 20 has an average refractive index higher than the average refractive index of the non-waveguide region 73. The optical waveguide region 20 propagates light along the X direction. The X direction is a direction parallel to at least one of the reflection surfaces of the first and second mirrors 30 and 40 and perpendicular to the Y direction. The first adjustment element changes at least one of the refractive index and the thickness of the optical waveguide region 20.

  Each of the optical waveguide region 20 and the two non-waveguide regions 73 includes a region constituted by a common material 45. Each of the optical waveguide region 20 or the two non-waveguide regions 73 further includes at least one member 46 having a refractive index different from that of the common material 45. The at least one member 46 may contact at least one of the first and second mirrors 30 and 40. The first mirror 30 has a light transmittance higher than that of the second mirror 40 and emits a part of the light propagating in the optical waveguide region 20 from the optical waveguide region 20 in a direction intersecting the XY plane. To do. The XY plane is a virtual plane parallel to the X direction and the Y direction. The first adjustment element changes the direction of light emitted from the optical waveguide region 20 by changing at least one of the refractive index and the thickness of the optical waveguide region 20. More specifically, the first adjustment element changes the X component of the wave number vector of the emitted light.

In the example of FIG. 68, each of the optical waveguide region 20 and the two non-waveguide regions 73 includes the common material 45, and each of the two non-waveguide regions 73 includes the member 46. The member 46 is in contact with the second mirror 40. When the refractive index n ₁ of the member 46 is lower than the refractive index n ₂ of the common material 45, the average refractive index of the optical waveguide region 20 is higher than the average refractive index of the non-waveguide region 73. Thereby, light can propagate through the optical waveguide region 20. The combination of the common material 45 and the member 46 may be selected from, for example, SiO, TaO, TiO, AlO, SiN, AlN, or ZnO. In the Z direction, the dimension of the member 46 is r times (0 ≦ r ≦ 1) the distance between the first mirror 30 and the second mirror 40 (hereinafter referred to as “mirror distance”). At this time, the average refractive index of the non-waveguide region 73 is n _ave = n ₁ × r + n ₂ × (1−r). Hereinafter, “the dimension of the member” means the dimension of the member in the Z direction. When at least one member is composed of a plurality of members, “the size of at least one member” means the size of the member in the Z direction of the overall structure of the plurality of members.

In the example of FIG. 68, the waveguide mode was analyzed in more detail. The configuration of the first and second mirrors 30 and 40 is the same as that used in the calculation of FIG. The refractive indices used for the calculation are n ₁ = 1.45 and n ₂ = 1.6. The width of the optical waveguide region 20 is w = 6 μm. The width of the optical waveguide region 20 is also the distance between two separate non-waveguide regions 73. The thickness of the optical waveguide region 20 is h = 0.65 μm or h = 2.15 μm. These thicknesses correspond to the second-order (m = 2) and seventh-order (m = 7) modes in equation (13), respectively. The thickness of the non-waveguide region 73 is the same as the thickness of the optical waveguide region 20. The result of examining how the spread of the electric field in the waveguide mode changes depending on the ratio r of the dimension of the member 46 to the distance between the mirrors is shown below.

  FIG. 69A is a diagram illustrating a calculation result of the electric field distribution of the waveguide mode when r = 0.1 and h = 2.15 μm. FIG. 69B is a diagram showing a calculation result of the electric field distribution of the waveguide mode when r = 0.5 and h = 2.15 μm. In any case, it can be confirmed that a waveguide mode similar to the waveguide mode shown in FIG. 64B exists. It can be seen that the electric field distribution is wider in the Y direction when r = 0.1 (FIG. 69A) than when r = 0.5 (FIG. 69B).

  FIG. 70 is a diagram showing the relationship between the ratio r of the dimension of the member 46 to the inter-mirror distance and the electric field spread when the width of the optical waveguide region 20 is w = 6.0 μm. The thickness of the optical waveguide region 20 is h = 0.65 μm (m = 2, solid line) or h = 2.15 μm (m = 7, dotted line). As shown in the example of FIG. 70, it can be seen that the smaller the r, that is, the smaller the dimension of the member 46, the greater the spread of the electric field. In the second-order and seventh-order guided modes, the electric field spread shows almost the same behavior. In particular, it can be seen that when r ≦ 0.2, the spread of the electric field rapidly increases and exceeds the width of the optical waveguide region 20 (w = 6.0 μm).

71 is a diagram showing the relationship between the ratio r of the dimension of the member 46 to the distance between the mirrors and the extinction coefficient of the waveguide mode in the example of FIG. As shown in the example of FIG. 71, even when r is changed, the order of the extinction coefficient (10 ⁻⁵ ) is almost the same. That is, the extinction coefficient hardly depends on r. However, when the electric field extends to the non-waveguide region 73, scattering or absorption may increase due to various factors. For example, when the end of the non-waveguide region 73 is not smooth, when particles exist in the non-waveguide region 73, or when the non-waveguide region 73 itself absorbs light, the light propagating through the optical waveguide region 20 Loss. Therefore, it is desirable that r ≧ 0.2, which is a condition that the electric field does not spread into the non-waveguide region 73.

  Next, the case where the width of the optical waveguide region 20, that is, the distance between the two non-waveguide regions 73 apart from each other, was analyzed as w = 3 μm. This is a condition that the spread of the electric field is almost the same as the width of the optical waveguide layer 20 as shown in the example of FIG. 67 where r = 1.

  FIG. 72 is a diagram showing the relationship between the ratio r of the dimension of the member 46 to the distance between the mirrors and the spread of the electric field when the width of the optical waveguide region 20 is w = 3.0 μm. As in the example of FIG. 70, it can be seen that when r ≦ 0.2, the electric field spreads rapidly. At r <0.1, the electric field spread exceeds 6 μm.

  Even if the electric field in the waveguide mode is excessively widened, there is no problem when an optical scanning device is configured using the single optical waveguide region 20. However, in the optical scanning device in which the optical waveguide regions 20 are arrayed, excessive spread of the electric field in the waveguide mode becomes a problem. In the optical scanning device, when the width of the non-waveguide region 73 sandwiched between the two optical waveguide regions 20 is 3 μm or less, the waveguide mode electric field of the optical waveguide region 20 is guided by the adjacent optical waveguide region 20. The electric field of the mode overlaps with the non-waveguide region 73. As a result, a crosstalk phenomenon occurs in which at least part of the light propagating through the optical waveguide region 20 is transmitted to the adjacent optical waveguide region 20. Due to the crosstalk phenomenon, the interference effect of light emitted from the plurality of optical waveguide regions 20 cannot be obtained.

  For the above reason, it is desirable that r ≧ 0.1. Furthermore, it is more desirable that r ≧ 0.2, which is a condition in which most of the electric field is distributed inside the optical waveguide region 20. Even if r ≦ 0.1 or r ≦ 0.2, the crosstalk phenomenon can be avoided if the width of the non-waveguide region 73 is larger than the width of the optical waveguide region 20. Such a configuration can also be used in the optical scanning device.

  In the optical scanning device according to the present embodiment, the manufacturing cost can be reduced by using a low-cost material for the common material 45.

<Modification>
FIG. 73 is a cross-sectional view of an optical scanning device schematically showing a configuration example of the optical waveguide region 20 and the non-waveguide region 73 in a modification of the present embodiment. In the example of FIG. 73, each of the optical waveguide region 20 and the two non-waveguide regions 73 includes a common material 45, and the optical waveguide region 20 includes a member 46. The member 46 is in contact with the second mirror 40. When the refractive index n ₁ of the member 46 is higher than the refractive index n ₂ of the common material 45, the average refractive index of the optical waveguide region 20 is higher than the average refractive index of the non-waveguide region 73. Thereby, light can propagate through the optical waveguide region 20. In this configuration, the combination of the common material 45 and the member 46 may be any two selected from the group consisting of SiO, TaO, TiO, AlO, SiN, AlN, or ZnO, for example. Further, when air or liquid is used as the common material 45, the thickness can be easily changed. That is, the configuration shown in FIG. 73 is advantageous for a method of modulating the thickness.

FIG. 74 is a diagram showing the relationship between the ratio r of the dimension of the member 46 to the distance between the mirrors and the spread of the electric field in the example of FIG. The refractive indices used for the calculation are n ₁ = 1.6 and n ₂ = 1.45. The width of the optical waveguide region 20 is w = 3.0 μm, and the thickness of the optical waveguide region 20 is h = 0.65 μm (m = 2). As can be seen from the example of FIG. 74, as in the examples of FIGS. 70 and 72, the spread of the electric field rapidly increases at r ≦ 0.2.

  The optical waveguide region 20 or the non-waveguide region 73 can also be formed by providing a step on at least one reflection surface of the first and second mirrors 30 and 40. The step corresponds to the member 46 having a refractive index different from that of the common material 45.

FIG. 75A is a cross-sectional view of an optical scanning device schematically showing a configuration example in which a step 46 is provided on a part of the reflection surface of the second mirror 40 to form the optical waveguide region 20 and the non-waveguide region 73 FIG. In the example of FIG. 75A, the refractive index n ₂ of the common member is lower than the average refractive index of the member 46. In this example, the region including the member 46 corresponds to the optical waveguide region 20 and the region not including the member 46 corresponds to the non-waveguide region 73 when viewed from the Z direction.

FIG. 75B is an optical scanning device schematically showing another configuration example in which the stepped member 46 is provided on a part of the reflection surface of the second mirror 40 to form the optical waveguide region 20 and the non-waveguide region 73. It is sectional drawing. In the example of FIG. 75B, the refractive index n ₂ of the common member is higher than the average refractive index of the member 46. In this example, the region not including the member 46 corresponds to the optical waveguide region 20 and the region including the member 46 corresponds to the non-waveguide region 73 when viewed from the Z direction.

  As shown in FIGS. 75A and 75B, the optical waveguide region 20 and the non-waveguide region 73 are determined by the magnitude relationship between the refractive index of the common material 45 and the refractive index of the member 46.

FIG. 76 is a cross-sectional view of an optical scanning device schematically showing a configuration example in which two members 46 are arranged apart from each other on the first mirror 30 side between the first and second mirrors 30 and 40. is there. FIG. 77 schematically shows a configuration example in which two members 46 are arranged apart from each other on both sides of the first and second mirrors 30 and 40 between the first and second mirrors 30 and 40. It is sectional drawing of the optical scanning device shown. In the example of FIG. 76, the two members 46 are in contact with the first mirror 30, and in the example of FIG. 77, the upper two members 46 are in contact with the first mirror 30 and the lower two members 46 are in the second Touch the mirror. Refractive index of the member 46 is _{n 1,} the refractive index of the common material 45 is _{n 2.} In the case of n ₁ <n ₂ , when viewed from the Z direction, the region not including the member 46 corresponds to the optical waveguide region 20, and the region including the member 46 corresponds to the non-waveguide region 73. When n ₁ > n _2, the region including the member 46 corresponds to the optical waveguide region 20 and the region not including the member 46 corresponds to the non-waveguide region 73 when viewed from the Z direction.

In FIG. 78, between the first and second mirrors 30 and 40, two members 46 are disposed apart on the first mirror 30 side, and another member 47 is disposed on the second mirror 40 side. It is sectional drawing of the optical scanning device which shows the example of a structure typically. In the example of FIG. 78, the two members 46 are in contact with the first mirror 30, and the other member 47 is in contact with the second mirror 40. When viewed from the Z direction, the member 46 and the other member 47 do not overlap. The refractive index of the common material 45 is n ₂ , the refractive index of the member 46 is n ₁ , and the refractive index of the other member 47 is n ₃ . In the member 46 and the other member 47, at least one of the refractive index and the dimension may be different.

  When viewed from the Z direction, when the average refractive index of the region including the member 46 is larger than the average refractive index of the region including the other member 47, the region including the member 46 corresponds to the optical waveguide region 20, A region including the member 47 corresponds to the non-waveguide region 73. When the average refractive index of the region including the member 46 is smaller than the average refractive index of the region including the other member 47 when viewed from the Z direction, the region including the other member 47 corresponds to the optical waveguide region 20, A region including the member 46 corresponds to the non-waveguide region 73.

For example, when the refractive index n ₁ of the member 46 is lower than the refractive index n ₂ of the common material 45 and the refractive index n ₃ of the other member 47 is higher than the refractive index n ₂ of the common material 45 (n ₁ < n ₂ <n ₃ ) is assumed. In this case, when viewed from the Z direction, the region including the other member 47 corresponds to the optical waveguide region 20, and the region including the member 46 corresponds to the non-waveguide region 73. The optical waveguide region 20 includes at least one other member 47 having a refractive index n ₃ higher than the refractive index n ₂ of the common material 45, so that the average refractive index of the optical waveguide region 20 and the non-waveguide region 73 The difference from the average refractive index increases. Thereby, the seepage of the waveguide mode of the optical waveguide region 20 to the non-waveguide region 73 can be suppressed.

  FIG. 79 is a cross-sectional view of an optical scanning device schematically showing a configuration example in which two members 46 are arranged apart from each other on the second mirror 40 side between the first and second mirrors 30 and 40. is there. In the example of FIG. 79, the optical scanning device further includes two support members 76 that fix the distance between the first mirror 30 and the second mirror 40. The two support members 76 are located outside the two non-waveguide regions.

  FIG. 80 is a cross-sectional view of an optical scanning device showing a configuration example in which members 46 are arranged on both sides of the first and second mirrors 30 and 40 between the first and second mirrors 30 and 40, respectively. It is. When viewed from the Z direction, the upper and lower members 46 overlap. If the common material 45 is air, the region including the member 46 corresponds to the optical waveguide region 20 and the region not including the member 46 corresponds to the non-waveguide region 73 when viewed from the Z direction.

  In the optical scanning device, the first adjustment element may include an actuator 78 connected to at least one of the first and second mirrors 30 and 40. The actuator 78 can change the thickness of the optical waveguide region 20 by changing the distance between the first mirror 30 and the second mirror 40.

  The actuator 78 includes a piezoelectric member, and the distance between the first mirror 30 and the second mirror 40 may be changed by deforming the piezoelectric member. Thereby, the direction of the light emitted from the optical waveguide region 20 can be changed. The material of the piezoelectric member is as described in the examples of FIGS.

  68, 73, 75A, 75B, and 76 to 80, when the common material 45 is liquid crystal, the first adjustment element has a pair of electrodes that sandwich the optical waveguide region 20 therebetween. The refractive index of the optical waveguide region 20 may be changed by applying a voltage to the electrodes. Thereby, the direction of the light emitted from the optical waveguide region 20 can be changed.

  Next, an example in which the optical waveguide layer 20 illustrated in FIGS. 61, 63, and 65 includes liquid crystal is compared with an example in which the common material 45 illustrated in FIGS. 68, 73, 75A, 75B, and 76 to 80 includes liquid crystal. .

  In the example in which the optical waveguide layer 20 shown in FIGS. 61, 63, and 65 includes liquid crystal, the liquid crystal is injected using the optical waveguide layer 20 having a narrow width as a flow path. At that time, in order to prevent air bubbles from being mixed in, measures are taken such as securing a flow path for liquid crystal injection or injecting liquid crystal in a vacuum.

  Usually, an alignment film is provided to align the liquid crystal. In the example shown in FIGS. 61, 63, and 65, after providing the spacer 73 on the second mirror 40, the alignment film is applied to the bottom surface of the optical waveguide layer 20. The alignment film is rubbed. However, the presence of the spacer 73 may affect the uniform application of the alignment film and the rubbing process.

  When the thickness of the spacer 73 is larger than the width of the optical waveguide layer 20, the side surface of the spacer 73 may affect the alignment of the liquid crystal on the top surface or the bottom surface of the optical waveguide layer 20. Further, the side surface of the spacer 73 may affect the response speed of the liquid crystal when a voltage is applied.

  On the other hand, in the example in which the common material 45 shown in FIGS. 68, 73, 75A, 75B and 76-80 includes liquid crystal, the member 46 in the non-waveguide region 73 hardly affects the liquid crystal.

  In the examples shown in FIGS. 68, 73, 75A, 75B and 76 to 80, it is not necessary to flow the liquid crystal through a narrow flow path. Therefore, it is possible to easily fill the liquid crystal without mixing bubbles. For example, in the optical waveguide region 20 and the non-waveguide region 73, the entire liquid crystal can be filled by setting the thickness of the region including the common material 45 to 10 nm or more.

  In the example shown in FIGS. 68, 73, 75A, 75B and 76-80, the dimension of the member 46 is small. Therefore, the alignment film can be easily applied onto the second mirror 40. Thereby, a photo-alignment process can be performed on the alignment film. Further, since the size of the member 46 is small, it is possible to easily perform the rubbing process. Furthermore, by providing an alignment film on the surface of the member 46, the alignment film can be provided both between the second mirror 40 and the liquid crystal and between the member 46 and the liquid crystal. Thereby, since the alignment film can be attached in the entirety between the first mirror 30 and the second mirror 40, the alignment force of the liquid crystal can be aligned.

  In general, the thickness of the alignment film is about 100 nm or less. Therefore, in each of the optical waveguide region 20 and the two non-waveguide regions 73, the thickness of the region where the common material 45 exists is, for example, 100 nm or more.

  In the examples shown in FIGS. 68, 73, 75 </ b> A, 75 </ b> B and 76 to 80, the thickness of the optical waveguide region 20 can be made larger than the dimension of the member 46 in the non-waveguide region 73. At this time, the liquid crystal in the optical waveguide region 20 is affected by two effects: the alignment layer at the interface between the second mirror 40 and the liquid crystal in the optical waveguide region 20 and the side surface of the member 46 in the optical waveguide region 20. . Therefore, by making the width of the optical waveguide region 20 larger than the height of the member 46 in the non-waveguide region 73, the liquid crystal in the optical waveguide region 20 is less than the side surface of the member 46 between the second mirror 40 and the liquid crystal. It is strongly influenced by the alignment layer at the interface, and the controllability of liquid crystal alignment by the alignment layer is improved. In particular, when the dimension of the member 46 is, for example, 50% or less of the thickness of the optical waveguide region 20, the liquid crystal in the optical waveguide region 20 has an area in contact with the alignment layer rather than the area in contact with the side surface of the member 46. Therefore, the controllability of liquid crystal alignment is improved. At this time, not only the alignment of the liquid crystal is facilitated, but also the response speed of the liquid crystal when a voltage is applied can be improved.

  The optical scanning device shown in FIG. 68 may have the following structure, for example.

  81A is a cross-sectional view in the XZ plane including the optical waveguide region 20, of the configuration example shown in FIG. 81B is a cross-sectional view in the XZ plane including the non-waveguide region 73 of the configuration example shown in FIG.

  In the example shown in FIGS. 81A and 81B, the second mirror 40 is longer than the first mirror 30 in the X direction. The adjustment layer 51 is provided on a portion of the second mirror 40 that does not overlap with the first mirror 30 when viewed from the Z direction. The first waveguide 1 is provided on the adjustment layer 51. The first waveguide 1 is connected to the optical waveguide region.

  As shown in FIG. 81B, the dimension of the member 46 in the non-waveguide region 73 can be made the same as the thickness of the adjustment layer 51. Thereby, there is an advantage that the members 46 in the non-waveguide region 73 can be manufactured collectively by a microfabrication process. Further, in the example shown in FIG. 81A, guided light can be efficiently coupled by matching the center of the first waveguide 1 in the Z direction with the center of the optical waveguide region 20 in the Z direction. That is, it is desirable that the sum of the thickness of the adjustment layer 51 and the half value of the thickness of the first waveguide 1 matches the half value of the thickness of the optical waveguide region 20 in the Z direction. At this time, the thickness of the adjustment layer 51 and the dimension of the member 46 are 50% or less of the thickness of the optical waveguide region 20, and as described above, this is a desirable shape even in consideration of the orientation of the liquid crystal. .

  The optical waveguide device 20 and the two non-waveguide regions 73 may be arrayed to constitute an optical scanning device. The optical scanning device includes a plurality of optical waveguide regions including the optical waveguide region 20 and a plurality of non-waveguide regions including the two non-waveguide regions 73. The average refractive index of each of the plurality of optical waveguide regions is higher than the average refractive index of each of the plurality of non-waveguide regions. The plurality of optical waveguide regions and the plurality of non-waveguide regions are alternately arranged in the Y direction between the first and second mirrors 30 and 40.

  The optical scanning device may further include a plurality of phase shifters respectively connected to the plurality of optical waveguide regions, and a second adjustment element that changes the direction of light emitted from the plurality of optical waveguide regions. Each of the plurality of phase shifters includes a waveguide connected to the optical waveguide region 20 in a corresponding one of the plurality of optical waveguide regions directly or through another waveguide.

  The waveguide in each phase shifter may include a material whose refractive index changes in response to voltage application or temperature change. The second adjustment element applies a voltage to the waveguide in each phase shifter or changes the temperature of the waveguide. Thereby, the refractive index in the waveguide can be changed, and the phase difference of light propagating from the plurality of phase shifters to the plurality of optical waveguide regions can be respectively changed. As a result, the direction of light emitted from the plurality of optical waveguide regions can be changed. More specifically, the second adjustment element can change the Y component of the wave number vector of the emitted light.

<Application example>
FIG. 82 is a diagram illustrating a configuration example of the optical scanning device 100 in which elements such as the optical branching device 90, the waveguide array 10A, the phase shifter array 80A, and the light source 130 are integrated on a circuit board (for example, a chip). The light source 130 can be, for example, a light emitting element such as a semiconductor laser. The light source 130 in this example emits light having a single wavelength whose wavelength in free space is λ. The optical branching device 90 branches the light from the light source 130 and introduces it into the waveguides in the plurality of phase shifters. In the configuration example of FIG. 82, an electrode 62a and a plurality of electrodes 62b are provided on the chip. A control signal is supplied from the electrode 62a to the waveguide array 10A. Control signals are sent from the plurality of electrodes 62b to the plurality of phase shifters 80 in the phase shifter array 80A. The electrodes 62a and 62b can be connected to a control circuit (not shown) that generates the control signal. The control circuit may be provided on the chip shown in FIG. 82, or may be provided on another chip in the optical scanning device 100.

  As shown in FIG. 82, by integrating all components on a chip, a wide range of optical scanning can be realized with a small device. For example, all the components shown in FIG. 82 can be integrated on a chip of about 2 mm × 1 mm.

  FIG. 83 is a schematic diagram illustrating a state in which a two-dimensional scan is performed by irradiating a light beam such as a laser far away from the optical scanning device 100. A two-dimensional scan is performed by moving the beam spot 310 horizontally and vertically. For example, a two-dimensional ranging image can be acquired by combining with a known TOF (Time Of Flight) method. The TOF method is a method for calculating a flight time of light and observing a distance by irradiating a laser and observing reflected light from an object.

  FIG. 84 is a block diagram illustrating a configuration example of a LiDAR system 300 that is an example of a light detection system capable of generating such a ranging image. The LiDAR system 300 includes an optical scanning device 100, a photodetector 400, a signal processing circuit 600, and a control circuit 500. The photodetector 400 detects light emitted from the optical scanning device 100 and reflected from the object. The photodetector 400 can be, for example, an image sensor having sensitivity to the wavelength λ of light emitted from the optical scanning device 100 or a photodetector including a light receiving element such as a photodiode. The photodetector 400 outputs an electrical signal corresponding to the amount of received light. The signal processing circuit 600 calculates the distance to the object based on the electrical signal output from the photodetector 400, and generates distance distribution data. The distance distribution data is data indicating a two-dimensional distribution of distance (that is, a distance measurement image). The control circuit 500 is a processor that controls the optical scanning device 100, the photodetector 400, and the signal processing circuit 600. The control circuit 500 controls the timing of irradiation of the light beam from the optical scanning device 100 and the timing of exposure and signal readout of the photodetector 400, and instructs the signal processing circuit 600 to generate a distance measurement image.

  In the two-dimensional scan, the frame rate for acquiring the distance measurement image can be selected from, for example, 60 fps, 50 fps, 30 fps, 25 fps, 24 fps, and the like that are generally used for moving images. In consideration of application to an in-vehicle system, the larger the frame rate, the higher the frequency of acquiring the distance measurement image, and the obstacle can be detected with high accuracy. For example, when traveling at 60 km / h, an image can be acquired every time the vehicle moves about 28 cm at a frame rate of 60 fps. At a frame rate of 120 fps, an image can be acquired every time the car moves about 14 cm. At a frame rate of 180 fps, an image can be acquired every time the car moves about 9.3 cm.

  The time required to acquire one ranging image depends on the speed of the beam scan. For example, in order to acquire an image having a resolution point of 100 × 100 at 60 fps, it is necessary to perform a beam scan at 1.67 μs or less per point. In this case, the control circuit 500 controls the emission of the light beam by the optical scanning device 100 and the signal accumulation / reading by the photodetector 400 at an operation speed of 600 kHz.

<Application example to optical receiving device>
The optical scanning device according to the present disclosure can be used as an optical receiving device with almost the same configuration. The optical receiving device includes the same waveguide array 10A as the optical scanning device, and a first adjustment element 60 that adjusts the direction of light that can be received. Each first mirror 30 of the waveguide array 10A transmits light incident on the opposite side of the first reflecting surface from the third direction. Each optical waveguide layer 20 of the waveguide array 10A propagates the light transmitted through the first mirror 30 in the second direction. The first adjusting element 60 can change the direction of receivable light by changing at least one of the refractive index and the thickness of the optical waveguide layer 20 in each waveguide element 10. Further, the light received by the optical receiving device through the plurality of phase shifters 80 or 80a and 80b that are the same as the optical scanning device and the plurality of waveguide elements 10 through the plurality of phase shifters 80 or 80a and 80b. In the case where the second adjustment element that changes the phase difference between the two is provided, the direction of receivable light can be changed two-dimensionally.

For example, an optical receiving device in which the light source 130 in the optical scanning device 100 shown in FIG. 82 is replaced with a receiving circuit can be configured. When light having a wavelength λ is incident on the waveguide array 10A, the light is sent to the optical branching device 90 through the phase shifter array 80A, finally collected at one place, and sent to the receiving circuit. It can be said that the intensity of the light collected in one place represents the sensitivity of the optical receiving device. The sensitivity of the optical receiving device can be adjusted by adjusting elements separately incorporated in the waveguide array and the phase shifter array 80A. In the optical receiving device, for example, in FIG. 26, the direction of the wave vector (thick arrow in the figure) is reversed. The incident light has a light component in the direction in which the waveguide element 10 extends (X direction in the figure) and a light component in the arrangement direction of the waveguide elements 10 (Y direction in the figure). The sensitivity of the light component in the X direction can be adjusted by an adjusting element incorporated in the waveguide array 10A. On the other hand, the sensitivity of the light component in the arrangement direction of the waveguide elements 10 can be adjusted by an adjusting element incorporated in the phase shifter array 80A. From the phase difference Δφ of the light when the sensitivity of the optical receiving device is maximized, the refractive index _nw and the thickness d of the optical waveguide layer 20, θ and α ₀ (Equation (16) and Equation (17)) are known. For this reason, the incident direction of light can be specified.

  The optical receiving device may be configured using the optical waveguide region 20 and the two non-waveguide regions 73 in the examples of FIGS. In the optical receiving device, the optical waveguide region 20 propagates light incident on the optical waveguide region 20 via the first mirror 30 from the direction intersecting the XY plane in the X direction. The first adjustment element changes the direction of receivable light by changing at least one of the refractive index and the thickness of the optical waveguide region 20.

  A configuration similar to the above-described optical scanning device in which the optical waveguide region 20 and the two non-waveguide regions 73 are arrayed may be used as the optical receiving device. In the optical receiving device, the second adjustment element changes the direction of light that can be received by changing a difference in phase of light output from the plurality of optical waveguide regions through the plurality of phase shifters. .

  The technical features shown in the above-described embodiments and modifications may be replaced as appropriate in order to solve part or all of the above-described problems, or to achieve part or all of the above-described effects. Combinations are possible. In addition, technical features that are not described as essential in the present disclosure can be deleted as appropriate.

  The optical scanning device and the optical receiving device in the embodiment of the present disclosure can be used for applications such as a LiDAR system mounted on a vehicle such as an automobile, UAV, or AGV.

DESCRIPTION OF SYMBOLS 1 1st waveguide 2 Optical waveguide layer, waveguide 3 Multilayer reflective film 4 Multilayer reflective film 5 Grating 6 Laser light source 7 Optical fiber 10 Waveguide element (2nd waveguide)
20 Optical waveguide layer (optical waveguide region)
30 First Mirror 40 Second Mirror 42 Low Refractive Index Layer 44 High Refractive Index Layer 45 Common Material 46, 47 Member 50, 50A, 50B, 50C Substrate 51 First Dielectric Layer (Adjustment Layer)
52 Support member (auxiliary substrate)
60 adjustment element 61 second dielectric layer (protective layer)
62 Electrode 64 Wiring 66 Power supply 68 High electrical resistance material 70 Support member 71 Non-piezoelectric element 72 Piezoelectric element 73, 73a, 73b Spacer (non-waveguide region)
74a, 74b, 76 Support member 78 Actuator 80, 80a, 80b Phase shifter 90, 90a, 90b Optical branching device 92 Optical switch 100 Optical scanning device 110 Waveguide array driving circuit 130 Light source 210 Phase shifter array driving circuit 310 Beam spot 400 Photodetector 500 Control circuit 600 Signal processing circuit

Claims (29)

A first mirror having optical transparency;
A second mirror facing the first mirror;
Two non-waveguide regions arranged between the first and second mirrors with a gap in a first direction parallel to at least one reflection surface of the first and second mirrors;
The first and second mirrors are located between the first and second mirrors and between the two non-waveguide regions and have an average refractive index higher than the average refractive index of the non-waveguide regions, An optical waveguide region for propagating light along a second direction parallel to the at least one reflecting surface of the mirror and perpendicular to the first direction;
A first adjustment element that changes at least one of a refractive index and a thickness of the optical waveguide region;
With
Each of the optical waveguide region and the two non-waveguide regions includes a region made of a common material,
Each of the optical waveguide region or the two non-waveguide regions further includes at least one member having a refractive index different from that of the common material;
The first mirror has a higher light transmittance than the second mirror, and a part of the light propagating in the optical waveguide region is transferred from the optical waveguide region to the first and second mirrors. Exit in a third direction intersecting a virtual plane parallel to the direction;
The first adjustment element changes the third direction of light emitted from the optical waveguide region by changing at least one of a refractive index and a thickness of the optical waveguide region.
Optical scanning device. Each of the two non-waveguide regions includes the at least one member;
A refractive index of the at least one member is lower than a refractive index of the common material;
The optical scanning device according to claim 1.   The optical scanning device according to claim 2, wherein the optical waveguide region includes at least one other member having a refractive index higher than that of the common material. The optical waveguide region includes the at least one member;
A refractive index of the at least one member is higher than a refractive index of the common material;
The optical scanning device according to claim 1. The common material is air;
The optical scanning device according to claim 1. A width of the optical waveguide region in the first direction is 3 μm or more;
The optical scanning device according to claim 1. A dimension of the at least one member in a direction perpendicular to the first and second directions is greater than 0.1 times a distance between the first mirror and the second mirror;
The optical scanning device according to claim 1. The dimension of the at least one member in a direction perpendicular to the first and second directions is greater than 0.2 times the distance between the first mirror and the second mirror;
The optical scanning device according to claim 1. The width of each non-waveguide region in the first direction is greater than the width of the optical waveguide region in the first direction;
The optical scanning device according to claim 1. The dimension of the at least one member in a direction perpendicular to the first and second directions is not more than 0.2 times the distance between the first mirror and the second mirror;
The width of each non-waveguide region in the first direction is greater than the width of the optical waveguide region in the first direction;
The optical scanning device according to claim 1. The at least one member is in contact with at least one of the first and second mirrors;
The optical scanning device according to claim 1.   Two support members that are positioned between the first mirror and the second mirror and outside the two non-waveguide regions and fix the distance between the first mirror and the second mirror are further provided. The optical scanning device according to claim 1, further comprising: The first adjustment element includes an actuator connected to at least one of the first and second mirrors,
The actuator changes a thickness of the optical waveguide region by changing a distance between the first mirror and the second mirror;
The optical scanning device according to claim 1. The actuator includes a piezoelectric member, and changes the distance between the first mirror and the second mirror by deforming the piezoelectric member.
The optical scanning device according to claim 13. The common material is liquid crystal,
The first adjustment element includes a pair of electrodes sandwiching the optical waveguide region, and changes a refractive index of the optical waveguide region by applying a voltage to the pair of electrodes.
The optical scanning device according to claim 1. An alignment film is located between the second mirror and the liquid crystal, and between the at least one member and the liquid crystal.
The optical scanning device according to claim 15. In each of the optical waveguide region and the two non-waveguide regions, the thickness of the region where the common material exists in a direction perpendicular to the first and second directions is 100 nm or more.
The optical scanning device according to claim 16. A width of the optical waveguide region in the first direction is larger than a dimension of the at least one member in a direction perpendicular to the first and second directions;
The optical scanning device according to claim 16 or 17. In the second direction, the second mirror is longer than the first mirror,
A dielectric layer located on a portion of the second mirror that does not overlap the first mirror when viewed from a direction perpendicular to the first and second directions;
A waveguide located on the dielectric layer and connected to the optical waveguide region for propagating light along the second direction;
Further comprising
In a direction perpendicular to the first and second directions, the thickness of the dielectric layer and the dimension of the at least one member are 50% or less of the thickness of the optical waveguide region,
The optical scanning device according to claim 1. At least one of the first and second mirrors includes a multilayer reflective film,
The optical scanning device according to claim 1. When the component of the second direction of the wave vector of light emitted in the third direction is an X component,
The first adjusting element changes an X component of a wave vector by changing at least one of a refractive index and a thickness of the optical waveguide region;
The optical scanning device according to claim 1. A plurality of optical waveguide regions including the optical waveguide region;
A plurality of non-waveguide regions including the two non-waveguide regions;
With
The average refractive index of each of the plurality of optical waveguide regions is higher than the average refractive index of each of the plurality of non-waveguide regions,
The plurality of optical waveguide regions and the plurality of non-waveguide regions are alternately arranged in the first direction between the first and second mirrors.
The optical scanning device according to claim 1. A plurality of phase shifters respectively connected to the plurality of optical waveguide regions, each directly in the optical waveguide region in a corresponding one of the plurality of optical waveguide regions or via another waveguide; A plurality of phase shifters including connected waveguides;
A second adjustment that changes the third direction of light emitted from the plurality of optical waveguide regions by changing a difference in phase of light propagating from the plurality of phase shifters to the plurality of optical waveguide regions, respectively. Elements,
Further comprising
The optical scanning device according to claim 22. The waveguide in each phase shifter includes a material whose refractive index changes in response to voltage application or temperature change,
The second adjustment element changes a refractive index in the waveguide by applying a voltage to the waveguide in each phase shifter or changing a temperature of the waveguide, and from the plurality of phase shifters Changing the phase difference of light propagating to a plurality of optical waveguide regions,
The optical scanning device according to claim 23. When the component of the first direction of the wave vector of light emitted in the third direction is a Y component,
The second adjustment element changes the Y component of the wave vector by applying a voltage to the waveguide in each phase shifter or changing the temperature of the waveguide.
The optical scanning device according to claim 23 or 24. A first mirror having optical transparency;
A second mirror facing the first mirror;
Two non-waveguide regions arranged between the first and second mirrors with a gap in a first direction parallel to at least one reflection surface of the first and second mirrors;
The first and second mirrors are located between the first and second mirrors and between the two non-waveguide regions and have an average refractive index higher than the average refractive index of the non-waveguide regions, An optical waveguide region for propagating light along a second direction parallel to the at least one reflecting surface of the mirror and perpendicular to the first direction;
A first adjustment element that changes at least one of a refractive index and a thickness of the optical waveguide region;
With
Each of the optical waveguide region and the two non-waveguide regions includes a region made of a common material,
Each of the optical waveguide region or the two non-waveguide regions further includes at least one member having a refractive index different from that of the common material;
The first mirror has a higher light transmittance than the second mirror;
The optical waveguide region receives light incident on the optical waveguide region via the first mirror from a third direction intersecting a virtual plane parallel to the first and second directions. Propagate in the direction,
The first adjustment element changes the direction of receivable light by changing at least one of a refractive index and a thickness of the optical waveguide region.
Optical receiver device. A plurality of optical waveguide regions including the optical waveguide region;
A plurality of non-waveguide regions including the two non-waveguide regions;
With
The average refractive index of each of the plurality of optical waveguide regions is higher than the average refractive index of each of the plurality of non-waveguide regions,
The plurality of optical waveguide regions and the plurality of non-waveguide regions are alternately arranged in the first direction between the first and second mirrors.
27. The optical receiving device according to claim 26. A plurality of phase shifters respectively connected to the plurality of optical waveguide regions, each directly in the optical waveguide region in a corresponding one of the plurality of optical waveguide regions or via another waveguide; A plurality of phase shifters including connected waveguides;
A second adjustment element that changes the direction of light that can be received by changing a difference in phase of light output from the plurality of optical waveguide regions through the plurality of phase shifters, and
Further comprising
The optical receiving device according to claim 27. An optical scanning device according to any one of claims 1 to 25;
A photodetector that detects light emitted from the optical scanning device and reflected from an object;
A signal processing circuit for generating distance distribution data based on the output of the photodetector;
A light detection system comprising:

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