JP2018518008A - 高温超伝導体線の製造方法 - Google Patents
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0324—Processes for depositing or forming copper oxide superconductor layers from a solution
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0016—Apparatus or processes specially adapted for manufacturing conductors or cables for heat treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0548—Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0381—Processes for depositing or forming copper oxide superconductor layers by evaporation, e.g. MBE
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
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Abstract
Description
(a)1つ又は複数の緩衝層を有するテクスチャー加工された基板を準備する工程、
(b)イットリウム又は希土類金属含有化合物、アルカリ土類金属含有化合物及び遷移金属含有化合物を含む溶液を基板上に堆積させる工程、
(c)堆積した溶液を乾燥させることにより、イットリウム又は希土類金属、アルカリ土類金属及び遷移金属を含むフィルムを形成する工程、
(d)フィルムを、300〜600℃に加熱する工程、
(e)フィルムを少なくとも700℃の温度に加熱し、フィルムを300℃未満の温度に冷却する工程。ここで、加熱及び冷却が少なくとも2回行われる。
第1の炉の温度は750℃であった。この炉内で、水蒸気、窒素及び酸素の混合物を、10ミリバールの全圧でサンプル上に流した。水流速は40g/時間(これは3.3ミリバールの水分圧に相当する)であり、窒素流速は100リットル/時間であった。酸素分圧は、0.2ミリバールであった。サンプルは、第1の炉で5.5分間の高温滞留時間に対応する20m/時間の速度で炉内を移動した。滞留時間には、最初の加熱の間の500〜700℃へのより遅い加熱傾斜路が含まれるが、500℃までの加熱傾斜路と冷却傾斜路の速い部分が含まれる。図3は、第1の炉から出た後のサンプルのXRDスペクトルを示す。
第1の炉は、異なる温度を有する2つのゾーンを有していた。サンプルが最初に通過するゾーンは、温度T1が775℃であり、第2ゾーンは、温度T2が740℃であった。第1のゾーンにおけるサンプルの滞留時間は約0.3分であり、第2のゾーンでは1.5分であった。第1の炉では、水蒸気、窒素及び酸素の混合物を、10ミリバールの全圧でサンプル上に流した。水の流速は160g/時間であり、窒素の流速は100リットル/時間であった。水分圧は6.5ミリバール、酸素分圧は0.25ミリバールであった。サンプルは、第1の炉で5.5分の滞留時間に対応する20m/時間の速度で炉内を移動した。
Claims (12)
- イットリウム又は希土類金属、アルカリ土類金属、及び遷移金属を含むフィルムを少なくとも700℃の温度に加熱し、該フィルムを300℃以下の温度に冷却することを有する高温超伝導体線を製造する方法であって、加熱及び冷却を少なくとも2回実施し、少なくとも700℃の温度に加熱する第1の加熱の間の水の分圧をP1,W、少なくとも700℃の温度に加熱する第1の加熱の間の全圧力をP1、少なくとも700℃の温度に加熱する第2の加熱の間の水の分圧をP2,W、少なくとも700℃の温度に加熱する第2の加熱の間の全圧力をP2、として、
- 前記フィルムを少なくとも700℃の温度に加熱し、300℃未満の温度に冷却して、前記高温超伝導体の種結晶が、最初に少なくとも700℃の温度に加熱する間に前記フィルム内で発達する一方、前記フィルムの大部分は異なる相を構成する請求項1に記載の方法。
- 少なくとも700℃の温度への前記第1の加熱は少なくとも1つの温度平坦域を含み、少なくとも700℃の温度への第2の加熱は少なくとも1つの温度平坦域含み、TIで示される少なくとも700℃の温度への第1の加熱中の最も長い温度平坦域の時間平均温度は、TIIで示される少なくとも第2の加熱中の最も長い温度平坦域の時間平均温度よりも低い請求項1又は2に記載の方法。
- 少なくとも700℃の温度への前記第1の加熱が、少なくとも700℃の温度を有する少なくとも2つの温度平坦域を含み、TI、1で示される第1の温度平坦域の温度は、TI、2で示される第2の温度平坦域の温度よりも高い請求項1〜3の何れか1項に記載の方法。
- 前記フィルムが1〜300m/時間の速度で炉に通される請求項1〜4の何れか1項に記載の方法。
- 前記加熱が炉内で行われ、該炉内で特定の1つの圧力及び雰囲気の特定の組成のみが選択可能である請求項1〜5の何れか1項に記載の方法。
- 前記フィルムが連続的に異なる炉に通される請求項1〜6の何れか1項に記載の方法。
- 前記フィルムがイットリウム、バリウム及び銅を含有する請求項1〜7の何れか1項に記載の方法。
- 前記フィルム中の遷移金属とイットリウム又は希土類金属とのモル比が3:1.0〜3:1.5である請求項1〜8の何れか1項に記載の方法。
- 前記フィルム中の遷移金属とアルカリ土類金属とのモル比が3:1.5〜3:2.0である請求項1〜9の何れか1項に記載の方法。
- 前記フィルムは、Ni及び1−10at-%のタングステンを含む基板上にある請求項1〜10の何れか1項に記載の方法。
- 前記基板と前記フィルムとの間に、ジルコン酸ランタン及び/又は酸化セリウムを含む緩衝層が存在する請求項11に記載の方法
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