JP2018200963A - Power semiconductor module and manufacturing method therefor - Google Patents

Abstract

To improve reliability in manufacturing efficiency, assembling accuracy, and electrical connection.SOLUTION: A power semiconductor module comprises: a terminal-having case 20 having a resin part 21 and a terminal part 22 and holding a power semiconductor chip 11; and a columnar relay member 2 connecting a gate electrode 11G, provided on an upper surface of the power semiconductor chip, and the terminal part. The terminal-having case has an insertion part 23 through which the relay member is inserted in its longitudinal direction. A connection surface 22b of the terminal part with respect to the relay member is at least part of an inner edge of the insertion part, and the insertion part is disposed in the gate electrode as viewed from the direction of the center axis A of the insertion part (the direction of Z axis). The relay member is inserted into the insertion part, one end extending from the insertion part is connected to the gate electrode via a solder S1, and a side 2a is connected to the connection surface via a solder S2.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a power semiconductor module and a manufacturing method thereof.

2. Description of the Related Art Conventionally, as a power semiconductor module, one in which an electrode on the upper surface of a power semiconductor chip and a terminal are connected by a relay member as described in, for example, Patent Document 1 is known.
In the power semiconductor module described in Patent Document 1, the cathode electrode is formed on the upper surface of the thyristor chip, and the gate electrode is formed on the portion of the upper surface of the thyristor chip where the cathode electrode is not formed. Furthermore, an anode electrode is formed on the lower surface of the thyristor chip.
In the power semiconductor module described in Patent Document 1, a first terminal (external lead terminal) electrically connected to the cathode electrode and a second terminal (external lead terminal) electrically connected to the anode electrode And are provided. These external lead-out terminals are held so as to be partially embedded in the insulating resin case. The insulating resin case is formed in a frame shape, and a mounting substrate on which a thyristor chip is mounted is fixed to the lower end opening.
Furthermore, in the power semiconductor module described in Patent Document 1, a gate signal input terminal for supplying a drive signal to the gate electrode is formed of a sheet metal material. Further, a gate signal relay member for electrically connecting the gate electrode and the gate signal input terminal is provided, and the gate signal relay member is formed in a substantially columnar shape extending in the vertical direction.
A front end side portion of the gate signal input terminal is disposed on the upper surface of the gate signal relay member, and the gate signal relay member is vertically disposed between the gate electrode and the gate signal input terminal.
In the power semiconductor module described in Patent Document 1, the gate electrode and the lower surface of the lower portion of the gate signal relay member are joined by solder. Furthermore, the tip side portion of the gate signal input terminal and the upper end portion of the upper portion of the gate signal relay member are joined by solder.
Thereby, in the power semiconductor module described in Patent Document 1, the first signal and the second terminal are connected via the thyristor chip by the gate signal supplied to the gate electrode via the gate signal input terminal and the gate signal relay member. A large current flowing between the two can be controlled.

JP 2014-143282 A

However, in the power semiconductor module described in Patent Document 1, since the gate signal relay member before soldering is simply sandwiched between the gate electrode on the upper surface of the chip and the gate signal input terminal, the holding is not reliable. The gate signal relay member is difficult to assemble, such as tilting, falling, and shifting in the horizontal direction.
For this reason, in the invention described in Patent Document 1, the lower surface of the gate signal relay member and the gate electrode on the upper surface of the chip are first connected by reflow of the high melting point solder, and then the gate signal relay is performed by reflow of the low melting point solder. Since the reflow process of connecting twice the upper end of a member and a gate signal input terminal was required, the following subjects had arisen.
First, it is not preferable from the viewpoint of manufacturing efficiency to connect the upper and lower ends of the gate signal relay member by two reflow processes.
In addition, since the lower end of the gate signal relay member is fixed first, a part of the horizontal displacement allowable range between the upper end of the gate signal relay member and the gate signal input terminal is used or the same allowable range is reduced. There is a risk of over-fixing.
Furthermore, since the gate signal relay member is arranged so as to be sandwiched between the gate electrode on the upper surface of the chip and the gate signal input terminal, if the gate signal input terminal is first held in the case, the gate signal relay is performed. The tolerance of the length of the member and the distance between the gate electrode on the upper surface of the chip and the gate signal input terminal is also required to be relatively strict.

  The present invention has been devised in view of the above conventional problems, and an object of the present invention is to provide a power semiconductor module in which an electrode on the upper surface of a power semiconductor chip and a terminal held by a case are connected by a relay member. Is to improve manufacturing efficiency, assembly accuracy, and reliability of electrical connection.

The power semiconductor module of the present invention includes a power semiconductor chip,
A case with a terminal having a resin part and a terminal part and holding the power semiconductor chip;
In a power semiconductor module comprising a columnar relay member that connects the electrode provided on the upper surface of the power semiconductor chip and the terminal portion,
The case with a terminal has an insertion portion for inserting the relay member in the longitudinal direction thereof,
The insertion part is disposed in the electrode when viewed in the central axis direction of the insertion part,
The connection surface of the terminal portion with respect to the relay member is at least a part of the inner edge of the insertion portion,
The relay member is inserted into the insertion portion, one end extending from the insertion portion is connected to the electrode via solder, and a side surface is connected to the connection surface via solder. .

  In the power semiconductor module of the present invention, preferably, the insertion portion has a size such that the relay member inserted through the insertion portion can fall by its own weight from the insertion portion when a central axis is in the vertical direction. It is characterized by that.

  In the power semiconductor module of the present invention, preferably, a hole portion is provided in the terminal portion, a central axis of the hole portion is disposed on a central axis of the insertion portion, and an inner peripheral surface of the hole portion is connected to the connection surface. It is characterized by being.

  The power semiconductor module of the present invention is preferably characterized in that a part of the inner edge of the insertion portion is constituted by an inner edge of a hole provided in the resin portion.

  In the power semiconductor module of the present invention, preferably, one end portion of the terminal portion connected to the relay member extends long in the central axis direction of the insertion portion, and the one end portion connected to the relay member The area of the side surface is larger than the area of the tip surface of the one end.

  The power semiconductor module of the present invention is preferably characterized in that the terminal portion extends from the one end connected to the relay member in a direction away from the relay member via a curved portion.

  The power semiconductor module of the present invention is preferably characterized in that the size of the opening of the insertion portion on the side far from the electrode is formed larger than the size of the opening of the insertion portion on the side close to the electrode. To do.

In the method for manufacturing a power semiconductor module of the present invention, the power semiconductor chip is held in the case with terminals, the relay member is inserted into the insertion portion from a side far from the electrode, and the guide of the insertion portion One end of the relay member extending from the insertion portion is disposed in contact with or close to the electrode via the first solder, and the side surface of the relay member is disposed on the connection surface of the terminal portion via the second solder. An assembly process for bringing the holding state in contact with or close to each other;
In the holding state, the first solder and the second solder are simultaneously reflowed to connect one end of the relay member and the electrode by the first solder, and the side surface of the relay member and the terminal by the second solder And a reflow process for connecting the connection surface of the part.

  The power semiconductor module manufacturing method of the present invention is preferably characterized in that, in the assembly step, the lower end of the relay member is brought into contact with and supported by the electrode via the first solder.

According to the power semiconductor module of the present invention, it is possible to insert the relay member at a position close to the connection surface of the terminal portion only by inserting the relay member into the insertion portion of the case with terminal before soldering. The relay member can be inserted toward the electrode of the chip, and the arrangement of the relay member can be maintained. Therefore, assembly is easy, manufacturing efficiency is improved, and assembly accuracy is improved. Since the soldering of the relay member can be completed in a single reflow process, the degree of freedom in selecting the solder is increased and the manufacturing efficiency is further improved. Assembly accuracy and electrical connection are achieved by self-alignment due to the surface tension of the molten solder. Reliability is improved. The relay member is positioned with respect to the electrode and the terminal portion by the restriction of the inner edge of the insertion portion, and the side surface of the relay member and the terminal portion are connected. The tolerance is greatly increased and the reliability of the electrical connection is improved.
According to the method for manufacturing a power semiconductor module of the present invention, the relay member can be inserted into a position close to the connection surface of the terminal portion only by inserting the relay member into the insertion portion of the case with terminal in the assembly step. The relay member can be inserted toward the electrode of the power semiconductor chip, and the arrangement of the relay member can be maintained. Therefore, assembly is easy, manufacturing efficiency is improved, and assembly accuracy is improved. Since the soldering of the relay member is completed in a single reflow process, the degree of freedom in selecting the solder is increased, and the manufacturing efficiency is further improved. Self-alignment by the surface tension of the molten solder enables assembly accuracy and electrical connection reliability. Will improve. The relay member is positioned with respect to the electrode and the terminal portion by the restriction of the inner edge of the insertion portion, and the side surface of the relay member and the terminal portion are connected. The tolerance is greatly increased and the reliability of the electrical connection is improved.

It is a perspective view which shows the gate connection structure of the power semiconductor module which concerns on Embodiment 1 of this invention. It is a top view which shows the gate connection structure of the power semiconductor module which concerns on Embodiment 1 of this invention. It is a top view which shows the modification with respect to Embodiment 1 shown in FIG. 1, FIG. It is sectional drawing which shows the other modification with respect to Embodiment 1 shown in FIG. 1, FIG. It is the perspective view (a) which shows the gate connection structure of the power semiconductor module which concerns on Embodiment 2 of this invention, and the perspective view (b) of the principal part. It is the perspective view (a) which shows the gate connection structure of the power semiconductor module which concerns on Embodiment 3 of this invention, and the top view (b) of the principal part.

  An embodiment of the present invention will be described below with reference to the drawings. The following is one embodiment of the present invention and does not limit the present invention.

(Embodiment 1)
FIG. 1 shows a gate connection structure of the power semiconductor module 1A of the first embodiment.
The power semiconductor module 1A includes a mounting substrate 10, a terminal-equipped case 20, and a gate pin 2 as a gate signal relay member.
The mounting substrate 10 includes a power semiconductor chip 11 in which an insulating substrate having a conductor pattern is stacked on a metal base plate, and the lower surface is die-bonded to the conductor pattern. As the power semiconductor chip 11, the thyristor chip 11 is taken as an example. The anode electrode of the thyristor chip 11 is formed on the lower surface of the chip and connected to the conductor pattern on the insulating substrate, the cathode electrode is formed on the upper surface of the chip, and the electrode plate 30 is connected thereto. (The electrode plate 30 is connected to the anode electrode of the parallel diode by the metal plate 31 or the like.) Since a large current flows between the anode and the cathode, this is formed in a relatively large area. On the other hand, the gate electrode 11G is a signal input electrode for inputting a gate signal for switching the thyristor chip 11, and is formed with a relatively small area. In this example, the gate electrode 11G is formed small in the center of the chip, the cathode electrode is formed large around the gate electrode 11G, and the gate electrode 11G is exposed through the hole 30a formed in the electrode plate 30. Inside the hole 30a, the lower end of the gate pin 2 is joined to the gate electrode 11G via the solder S1. The gate pin 2 is a columnar member made of a metal material, and has a circular cross section in this embodiment.

The case 20 with a terminal has a resin portion 21 and a terminal portion composed of a gate signal input terminal 22 and other terminals, and is formed in a frame shape opened at the upper and lower ends by the resin portion 21, and the gate signal input terminal 22 and the like. Are embedded in the resin portion 21 and held. One end 22a disposed in the case of the gate signal input terminal 22 is shown.
The mounting substrate 10 is fixed to the lower end opening of the terminal-equipped case 20.
In the figure, the mounting substrate 10 is down, the vertical axis is the Z axis, and the two axes orthogonal to the Z axis and orthogonal to each other are the XY axes.
In the terminal-equipped case 20, the gate electrode 11 </ b> G and the gate signal input terminal 22 are connected by a gate pin 2 that is a signal relay member extending long in the vertical direction Z.
The lower end of the gate pin 2 and the gate electrode 11G are connected via the first solder S1, and the side surface 2a of the gate pin 2 and the front end surface 22b of the one end portion 22a of the gate signal input terminal 22 are connected to the second solder S2. Connected through.

The gate pin 2 is inserted through an insertion portion 23 formed in the case with terminal 20. The insertion part 23 is mainly configured by a hole 21a of the resin part 21 in a passage shape in which the central axis A is arranged in the Z-axis direction. FIG. 2 shows a plan view of the main configuration.
The insertion portion 23 refers to a space portion through which the gate pin 2 is inserted in the longitudinal direction, and an inner edge 23a that is in contact with and regulated by the side surface 2a of the gate pin 2 is disposed around the insertion portion 23 and is defined in a predetermined formation range 23b. A member constituting the inner edge 23 a of the insertion part 23 is a constituent material of the case 20 with terminal, and at least a part of the inner edge 23 a of the insertion part 23 is constituted by the gate signal input terminal 22.
A gate electrode 11 </ b> G is disposed on the central axis A of the insertion part 23.

As shown in FIG. 2, the side surface 2a of the gate pin 2 is connected to the inner edge 23a (solid line in FIG. 2 (b)) of the insertion portion 23 that contacts and regulates the side surface 2a of the gate pin 2 assuming that the restraints by the solders S1 and S2 are released. The connection surface 22b of the gate signal input terminal 22 to be connected to is disposed. In this module 1A, the inner surface 21a1 of the hole 21a of the resin portion 21 and the connection surface 22b of the gate signal input terminal 22 are arranged flush with each other, so that the connection surface 22b is a part of the inner edge 23a of the insertion portion 23. It has become. Therefore, contact between the gate pin 2 and the gate signal input terminal 22 is obtained.
Regardless of this, as shown in FIG. 3, the connection surface 22b of the gate signal input terminal 22 may be disposed inside the hole 21a of the resin portion 21 when viewed in the Z-axis direction. This is also in this case because the connection surface 22b becomes a part of the inner edge 23a of the insertion portion 23 that contacts and regulates the side surface 2a of the gate pin 2. The inner edge 23 a of the remaining insertion portion 23 that is necessary is constituted by the inner edge of the hole portion 21 a provided in the resin portion 21.

  As shown in FIGS. 2 and 3, the insertion portion 23 is disposed in the gate electrode 11G when viewed in the Z-axis direction. Accordingly, if the gate pin 2 is inserted into the insertion portion 23 from above, the lower surface of the gate pin 2 is not detached from the gate electrode 11G, and the gate pin 2 and the gate electrode 11G can be reliably connected. The formation range 23b of the insertion part 23 is shown by a solid line in FIGS. 2 (c) and 3 (c).

2 and 3, when the Z-axis direction is the vertical direction, the insertion portion 23 has a play 23c that allows the gate pin 2 to fall by its own weight from the insertion portion 23 with respect to the thickness (diameter) of the gate pin 2. It is the size you have.
Therefore, if the gate pin 2 is inserted into the insertion portion 23 from above, the lower surface of the gate pin 2 is attached to the gate electrode 11G due to the falling weight of the gate pin 2, so that the gate pin 2 and the gate electrode 11G can be reliably connected and the gate electrode The chip 11 is not mechanically stressed by excessively pressing 11G.

As shown in FIG. 4, the size of the opening of the insertion part 23 on the side far from the gate electrode 11G is larger than the size of the opening of the insertion part 23 on the side close to the gate electrode 11G. Also good. In this case, the formation range 23b of the insertion portion 23 viewed in the Z-axis direction is defined by the lower end opening 21b of the hole portion 21a, and the upper end opening 21c of the hole portion 21a is formed in order to facilitate the insertion of the gate pin 2. More widely formed. The connection surface 22b is disposed at the same position in the radial direction as the edge of the minimum diameter portion (lower end opening 21b) of the hole portion 21a. Alternatively, as described with reference to FIG. 3, the connecting surface 22 b may be disposed inside the resin portion 21 in the insertion portion 23. By disposing the connection surface 22b at the same position or in the radial direction as the minimum diameter portion of the resin portion 21, the connectivity between the gate pin 2 and the gate signal input terminal 22 is improved.
Thus, it is not necessary to form all of the inner edges 23a that come into contact with and regulate the side surface 2a of the gate pin 2 as surfaces continuous in the Z-axis direction. Even in that case, it is preferable that the connection surface 22b is disposed substantially parallel to the central axis A. This is to improve the connectivity with the side surface 2a of the gate pin 2.
In the above embodiment, the hole 21a is formed in the resin portion 21, but it goes without saying that the present invention can be implemented even if a notch is formed so that the gate pin 2 cannot be pulled out sideways (X and Y directions).

  It is sufficient that the insertion portion 23 has a size obtained by adding a play 23c that allows the weight to fall by its own weight to the diameter of the gate pin 2. In order to prevent the gate pin 2 from deviating from the central axis A, the inner dimension of the insertion portion 23 is less than twice the diameter of the gate pin 2. The insertion portion 23 is narrower than the thickness (diameter) of the gate pin 2 so that the side surface of the gate pin 2 is engaged with the inner edge 23a of the insertion portion 23 so that one end (lower end) of the gate pin 2 can be guided to the gate electrode 11G. Has been.

(Embodiment 2)
FIG. 5 shows a gate connection structure of the power semiconductor module 1B of the second embodiment. The power semiconductor module 1B of the present embodiment is a modification of the power semiconductor module 1A of the first embodiment, and differs in the following points.
One end portion 22a connected to the side surface 2a of the gate pin 2 of the gate signal input terminal 22 extends in the Z-axis direction, and the area of the side surface 22c of the one end portion 22a connected to the side surface 2a of the gate pin 2 is equal to one end portion. It is larger than the area of the front end surface 22d of 22a. That is, the connection surface of the gate pin 2 with the side surface 2a is the side surface 22c of the gate signal input terminal 22, and the side surface 22c is larger than the area of the front end surface 22d of the one end portion 22a.
The gate signal input terminal 22 has a bar shape with a uniform cross-sectional area, and the connection surface (22c) can be widened by bending the end portion 22a long in the Z-axis direction by bending it at approximately 90 degrees at the curved portion 22f. it can. The gate signal input terminal 22 extends from the one end 22a connected to the gate pin 2 in a direction away from the gate pin 2 through the curved portion 22f, and is routed to a desired position in the XY coordinates.
With this structure, a large connection area between the gate pin 2 and the gate signal input terminal 22 can be secured.

(Embodiment 3)
FIG. 6 shows a gate connection structure of the power semiconductor module 1C of the third embodiment. The power semiconductor module 1C of the present embodiment is a modification of the power semiconductor module 1A of the first embodiment, and differs in the following points.
A hole 22 e is provided in the gate signal input terminal 22. The central axis A of the hole 22 e is disposed on the central axis A of the insertion part 23. The inner peripheral surface of the hole 22e is a connection surface.
That is, the inner edge of the insertion portion 23 is configured by the inner edge of the hole 22 e provided in the gate signal input terminal 22. In the insertion portion 23, the inner edge that contacts and regulates the side surface 2a of the gate pin 2 is formed by the inner peripheral edge of the hole portion 22e, so that the gate signal input is possible even if the gate pin 2 is biased in any direction perpendicular to the Z axis. Since the terminal 22 is contacted, the gate pin 2 and the gate signal input terminal 22 can be reliably connected.
In the present embodiment, the gate pin 2 is joined to the entire inner periphery of the hole 22e via the second solder S2 over the entire circumference around the Z axis. Therefore, a large connection area between the gate pin 2 and the gate signal input terminal 22 can be secured.

  A hole 21a may be provided in the resin portion 21, and the gate pin 2 may be inserted through the hole 21a. In this case, the contour of the hole 21a of the resin portion 21 as viewed in the Z-axis direction is coincident with the hole 22e of the gate signal input terminal 22 or arranged outside the contour of the hole 22e. In short, it is only necessary that part of the resin portion 21 does not enter the hole portion 22e of the gate signal input terminal 22 when viewed in the Z-axis direction. Therefore, it is possible to implement the structure in which the resin portion 21 is not provided with the hole portion 21a and the resin portion 21 is not provided below the hole portion 22e of the gate signal input terminal 22 and its periphery.

(Production method)
Next, it demonstrates along a manufacturing method. This is a common manufacturing process for the power semiconductor modules 1A, 1B, and 1C of the first to third embodiments. However, regarding the insertion part 23, each structure mentioned above is comprised.

(1) Case manufacturing process First, the case manufacturing process which comprises the case 20 with a terminal mentioned above is implemented. The case manufacturing process includes a terminal manufacturing process and a resin molding process in which terminals are inserted. In the terminal manufacturing process, necessary terminals including the gate signal input terminal 22 are formed by press molding or the like, and necessary plating processing or the like is performed.
Next, as a resin molding process, the manufactured terminal is placed in a mold, the mold is closed, a resin is injected and cured, and the mold is opened and taken out.
The case 20 with a terminal provided with the insertion part 23 mentioned above is comprised by the above.

(2) Assembly process The mounting substrate 10 on which the power semiconductor chip 11 is mounted is fixed to the lower end opening of the terminal-equipped case 20. Thus, the terminal-equipped case 20 and the mounting substrate 10 are designed and manufactured in advance so that the insertion portion 23 is disposed above the gate electrode 11G.
Solder (for example, lead-free solder) is disposed at a location necessary for solder connection of the gate pin 2 in the next process (reflow process). Here, solder is applied to the connection surface of the gate electrode 11G and the gate signal input terminal 22 (the tip surface 22b in the first embodiment, the side surface 22c in the second embodiment, and the inner surface of the hole 22e in the third embodiment).
The gate pin 2 is inserted into the insertion part 23 from above. At this time, the lower end of the gate pin 2 is disposed in contact with the gate electrode 11G via the first solder S1 by the guide of the insertion portion 23, and the side surface 2a of the gate pin 2 is secondly connected to the connection surface of the gate signal input terminal 22. The holding state is set in contact with or close to the solder S2.

  When the gate pin 2 is dropped by its own weight as described above, the lower end of the gate pin 2 comes into contact with and is supported by the first solder S1 surface. If the insertion portion 23 is not the above-mentioned loose fit size having the play 23c but the gate pin 2 is a size capable of friction sliding, the gate pin 2 is frictionally locked to the insertion portion 23, and the lower end of the gate pin 2 is the first solder. Even if it is away from the S1 surface, it is possible if the first solder S1 is so close that it adheres to the lower end of the gate pin 2 during reflow. Even in this case, it is preferable to push in until the lower end of the gate pin 2 comes into contact with the first solder S1 surface. On the other hand, if the insertion portion 23 is dimensioned so that the gate pin 2 can be frictionally slid, the side surface 2a of the gate pin 2 and the connection surface of the gate signal input terminal 22 are in contact with each other (the state of friction engagement). ).

(3) Reflow step The first solder S1 and the second solder S2 are simultaneously reflowed in the holding state of (2) above to connect the lower end of the gate pin 2 and the gate electrode 11G with the first solder S1, and the second solder The side surface 2a of the gate pin 2 and the connection surface of the gate signal input terminal 22 are connected by the solder S2.
At this time, since the solders S1 and S2 are simultaneously melted, the gate pins 2 are self-aligned in the XYZ directions by the surface tension of the molten solder. By having the play 23c, the gate pin 2 can easily move in the Z-axis direction during the self-alignment action.

  Then, the upper end opening of the case with terminal 20 is covered with a resin cover member.

According to the above embodiment, since the gate pin 2 can be held in the insertion portion 23 of the terminal-equipped case 20 in the assembling step (2), the assembling is easy, the manufacturing efficiency is improved and the assembling accuracy is improved. ) Since solder bonding of the gate pin 2 is completed in one reflow process, the assembly accuracy and the reliability of electrical connection are further improved by manufacturing efficiency and self-alignment. The horizontal positioning of the gate pin 2 is ensured by the restriction of the inner edge 23 a of the insertion portion 23.
At the same time, since the side surface 2a of the gate pin 2 and the terminal 22 are connected, the tolerance of the length of the gate pin 2 and the distance between the electrode 11G and the terminal 22 is greatly increased, and the reliability of electrical connection is improved. . That is, by making the length of the gate pin 2 sufficiently longer than the distance between the electrode 11G and the terminal 22 in the Z-axis direction, a manufacturing error is allowed, and the gate pin 2 and the terminal 22 have a desired connection area or more. Connected securely.
Moreover, since it is based on one reflow process, lead-free solder can be used as the solders S1 and S2 (because lead-free solder has little melting point selectivity).

Note that the present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the scope of the present invention.
For example, in the above embodiment, the power semiconductor chip is a thyristor chip, but the present invention may be applied to other types of semiconductor devices such as IGBTs and MOSFETs.
Moreover, in the said embodiment, although applied to the connection to the gate electrode on a power semiconductor chip, you may apply this invention to the connection to another electrode.
In the above embodiment, the relay member has a circular cross section, but a relay member having another cross sectional shape such as a rectangular cross section may be applied. The shape of the insertion part is preferably formed in accordance with the cross-sectional shape of the relay member.
In the above embodiment, the solder is applied to the gate electrode and the gate signal input terminal. However, it is sufficient that the solder can be disposed at a position necessary for solder connection of the relay member.

1A, 1B, 1C Power semiconductor module 2 Gate pin (relay member)
2a Side surface 10 Mounting substrate 11 Power semiconductor chip 11G Gate electrode 20 Case with terminal 21 Resin portion 21a Hole portion 22 Gate signal input terminal (terminal portion)
22a One end portion 22e Hole portion 23 Insertion portion 23a Restricted inner edge 23b Insertion portion formation range S1, S2 Solder

Claims (9)

A power semiconductor chip;
A case with a terminal having a resin part and a terminal part and holding the power semiconductor chip;
In a power semiconductor module comprising a columnar relay member that connects the electrode provided on the upper surface of the power semiconductor chip and the terminal portion,
The case with a terminal has an insertion portion for inserting the relay member in the longitudinal direction thereof,
The insertion part is disposed in the electrode when viewed in the central axis direction of the insertion part,
The connection surface of the terminal portion with respect to the relay member is at least a part of the inner edge of the insertion portion,
The relay member is inserted into the insertion portion, one end extending from the insertion portion is connected to the electrode via solder, and a side surface is connected to the connection surface via solder. Power semiconductor module. The said insertion part is set as the magnitude | size which the said relay member penetrated by the said insertion part is self-falling from the said insertion part when a center axis | shaft is made into an up-down direction. Power semiconductor module. The hole portion is provided in the terminal portion, the central axis of the hole portion is disposed on the central axis of the insertion portion, and the inner peripheral surface of the hole portion is the connection surface. Or the power semiconductor module of Claim 2. 3. The power semiconductor module according to claim 1, wherein a part of an inner edge of the insertion portion is configured by an inner edge of a hole provided in the resin portion. One end portion of the terminal portion connected to the relay member extends long in the central axis direction of the insertion portion, and the area of the side surface of the one end portion connected to the relay member is the tip surface of the one end portion. The power semiconductor module according to claim 4, wherein the power semiconductor module is larger than the area of the power semiconductor module. 6. The power semiconductor module according to claim 5, wherein the terminal portion extends from one end connected to the relay member in a direction away from the relay member via a curved portion. 7. The size of the opening of the insertion portion far from the electrode is formed larger than the size of the opening of the insertion portion closer to the electrode. The power semiconductor module as described in any one. In the manufacturing method of the power semiconductor module as described in any one of Claims 1-7,
One end of holding the power semiconductor chip in the case with terminals, inserting the relay member into the insertion portion from the side far from the electrode, and extending from the insertion portion of the relay member by guidance of the insertion portion Is held in contact with or close to the electrode via the first solder, and the side surface of the relay member is held in contact with or close to the connection surface of the terminal portion via the second solder Assembly process and
In the holding state, the first solder and the second solder are simultaneously reflowed to connect one end of the relay member and the electrode by the first solder, and the side surface of the relay member and the terminal by the second solder And a reflow process for connecting the connection surface of the part. A method for manufacturing a power semiconductor module. 9. The method of manufacturing a power semiconductor module according to claim 8, wherein, in the assembling step, the lower end of the relay member is brought into contact with and supported by the electrode through the first solder.

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