JP2018200922A - Solar cell paste composition - Google Patents

Abstract

To provide a solar cell paste composition capable of suppressing occurrence of voids in an interface between electrode layers in a crystal system solar cell, excellent in conversion efficiency and capable of suppressing the occurrence of Sandy on the surface of the electrode layer.SOLUTION: The solar cell paste composition containing aluminum powder, silicon powder, an organic vehicle and glass frit. In the silicon powder, the minimum particle size (Dmin) of particle size distribution used as a volume reference measured by a laser diffraction scattering method is 5 μm or more and less than 10 μm, and the maximum particle size (Dmax) of the particle size distribution is 10 μm or more and 50 μm or less.SELECTED DRAWING: None

Description

TECHNICAL FIELD The present invention relates to a solar cell paste composition, and more particularly to a solar cell intended to form a p ⁺ layer on a crystalline solar cell having a passivation film provided with an opening using laser irradiation or the like. The present invention relates to a paste composition.

  In recent years, various research and development have been conducted for the purpose of improving the conversion efficiency (power generation efficiency), reliability, and the like of crystalline solar cells. As one of them, a PERC (Passivated Emitter and Rear Cell) type high conversion efficiency cell having a passivation film made of silicon nitride, silicon oxide, aluminum oxide or the like on the back surface of the cell has attracted attention.

  The PERC type high conversion efficiency cell has a structure including an electrode layer mainly composed of aluminum, for example. This electrode layer (especially the back electrode layer) is formed, for example, by applying a paste composition mainly composed of aluminum in a pattern shape so as to cover the opening of the passivation film, and drying and baking as necessary. Is done. For example, Patent Document 1 discloses a paste composition containing aluminum powder, aluminum-silicon alloy powder, silicon powder, glass powder, and an organic vehicle. It is known that the conversion efficiency of the PERC type high conversion efficiency cell can be increased by appropriately designing the configuration of the electrode layer.

JP 2013-143499 A

  In the prior art such as Patent Document 1, silicon powder, aluminum-silicon alloy powder, or the like is added to the paste composition, and the Si concentration is increased to suppress the formation of voids called voids at the electrode layer interface. . When voids are generated at the electrode layer interface, the resistance can be increased and the long-term reliability of the crystalline solar cell can be reduced.

  However, increasing the Si concentration increases the electrical resistance of the electrode layer and decreases the conversion efficiency. Further, a granular material having a diameter of about 20 to 200 μm having an aluminum or aluminum-silicon alloy composition (hereinafter, this granular material is also referred to as “Sandy”) is generated on the surface of the electrode layer after firing, resulting in poor appearance. There's a problem. When Sandy occurs, there are cases where the cell is cracked starting from Sandy when the crystalline solar cells are stacked and stored or modularized. An example of Sandy is shown in FIGS. FIG. 3 shows an example in which 220 μm Sandy is recognized, and FIG. 4 shows an example in which 30 μm Sandy is recognized. On the other hand, FIG. 5 is an example in which Sandy is not recognized (an example in which there is no poor appearance).

  The present invention has been made in view of the above, and suppresses the generation of voids at the interface of the electrode layer in the crystalline solar cell, the conversion efficiency is good, and the generation of Sandy on the surface of the electrode layer is suppressed. It aims at providing the paste composition for solar cells which can be suppressed.

  As a result of intensive studies to achieve the above object, the present inventors have found that a solar cell paste composition containing a specific silicon powder in addition to an aluminum powder, an organic vehicle, and a glass frit can achieve the above object. The present invention has been completed.

That is, this invention relates to the following paste composition for solar cells.
1. A solar cell paste composition containing aluminum powder, silicon powder, organic vehicle and glass frit,
The silicon powder has a minimum particle size (Dmin) of a particle size distribution based on volume measured by a laser diffraction scattering method of 5 μm or more and less than 10 μm, and a maximum particle size (Dmax) of the particle size distribution of 10 μm or more and 50 μm or less. Is,
A solar cell paste composition characterized by the above.
2. The glass frit is selected from the group consisting of lead (Pb), bismuth (Bi), vanadium (V), boron (B), silicon (Si), tin (Sn), phosphorus (P) and zinc (Zn). The solar cell paste composition according to Item 1, which contains at least one of the above.
3. In the above item 1 or 2, containing 5 to 25 parts by mass of the silicon powder, 20 to 45 parts by mass of the organic vehicle, and 1 to 8 parts by mass of the glass frit with respect to 100 parts by mass of the aluminum powder. The paste composition for solar cells as described.

  According to the solar cell paste composition of the present invention, in a crystalline solar cell (particularly PERC type high conversion efficiency cell), generation of voids at the electrode layer interface is suppressed, conversion efficiency is good, and the electrode The effect of suppressing the generation of Sandy on the surface of the layer is obtained. That is, according to the solar cell paste composition of the present invention, it is possible to provide a crystalline solar cell with high conversion efficiency and high long-term reliability in which appearance defects are suppressed.

It is a schematic diagram which shows an example of the cross-section of a PERC type | mold solar cell, (a) is an example of the embodiment, (b) is another example of the embodiment. It is a schematic diagram of the cross section of the electrode structure produced in the Example and the comparative example. This is an example in which Sandy (220 μm) was observed on the surface of the electrode layer after firing. This is an example in which Sandy (30 μm) was observed on the surface of the electrode layer after firing. This is an example in which Sandy is not observed on the surface of the electrode layer after firing.

  Hereinafter, the solar cell paste composition of the present invention will be described in detail. In the present specification, the range indicated by “to” means “above or below” unless otherwise specified.

  The solar cell paste composition of the present invention can be used, for example, to form electrodes of crystalline solar cells. Although it does not specifically limit as a crystalline solar cell, For example, a PERC (Passivated emitter and rear cell) type | mold high conversion efficiency cell (henceforth a "PERC type solar cell") is mentioned. The solar cell paste composition of the present invention can be used, for example, to form a back electrode of a PERC solar cell. Hereinafter, the paste composition of the present invention is also simply referred to as “paste composition”.

  First, an example of the structure of the PERC type solar battery cell will be described.

1. PERC Type Solar Cell FIGS. 1A and 1B are schematic views of a general cross-sectional structure of a PERC type solar cell. The PERC type solar cell includes a silicon semiconductor substrate 1, an n-type impurity layer 2, an antireflection film (passivation film) 3, a grid electrode 4, an electrode layer (back electrode layer) 5, an alloy layer 6, and a p ⁺ layer 7. Can be provided as an element.

  The silicon semiconductor substrate 1 is not particularly limited. For example, a p-type silicon substrate having a thickness of 180 to 250 μm is used.

  The n-type impurity layer 2 is provided on the light receiving surface side of the silicon semiconductor substrate 1. The thickness of the n-type impurity layer 2 is, for example, 0.3 to 0.6 μm.

  The antireflection film 3 and the grid electrode 4 are provided on the surface of the n-type impurity layer 2. The antireflection film 3 is formed of, for example, a silicon nitride film and is also referred to as a passivation film. The antireflection film 3 acts as a so-called passivation film, so that recombination of electrons on the surface of the silicon semiconductor substrate 1 can be suppressed, and as a result, the recombination rate of the generated carriers can be reduced. Thereby, the conversion efficiency of a PERC type photovoltaic cell is increased.

  The antireflection film (passivation film) 3 is also provided on the back surface side of the silicon semiconductor substrate 1, that is, on the surface opposite to the light receiving surface. A contact hole (opening) formed through the antireflection film (passivation film) 3 on the back surface side and scraping a part of the back surface of the silicon semiconductor substrate 1 is formed on the back surface of the silicon semiconductor substrate 1. Formed on the side. A method for forming the contact hole is not limited, but a so-called LCO (Laser contact opening) method for providing an opening using laser irradiation or the like is generally used.

  The electrode layer 5 is formed in contact with the silicon semiconductor substrate 1 through the contact hole. The electrode layer 5 is a member formed by the paste composition of the present invention, and is formed in a predetermined pattern shape. The electrode layer 5 may be formed so as to cover the entire back surface of the PERC type solar battery cell as in the form of FIG. 1A, or the contact hole and the electrode layer 5 as in the form of FIG. You may form so that the vicinity may be covered. Since the main component of the electrode layer 5 is aluminum, the electrode layer 5 is an aluminum electrode layer.

  The electrode layer 5 is formed, for example, by applying a paste composition in a predetermined pattern shape and baking it. The coating method is not particularly limited, and examples thereof include known methods such as screen printing. After applying the paste composition and drying it as necessary, the electrode layer 5 is formed by firing for a short time at a temperature exceeding the melting point of aluminum (about 660 ° C.), for example.

  In the present invention, the firing temperature may be a temperature exceeding the melting point of aluminum (about 660 ° C.), but is preferably about 750 to 950 ° C., more preferably about 780 to 900 ° C. The firing time can be appropriately set according to the firing temperature within the range in which the desired electrode layer 5 is formed.

When fired in this manner, aluminum contained in the paste composition diffuses into the silicon semiconductor substrate 1. As a result, an aluminum-silicon (Al—Si) alloy layer (alloy layer 6) is formed between the electrode layer 5 and the silicon semiconductor substrate 1, and at the same time, by diffusion of aluminum atoms, p as an impurity layer is formed. ^{A +} layer 7 is formed.

The p ⁺ layer 7 can bring about an effect of preventing recombination of electrons and improving the collection efficiency of generated carriers, so-called BSF (Back Surface Field) effect.

  The electrode formed by the electrode layer 5 and the alloy layer 6 is the back electrode 8 shown in FIG. Accordingly, the back electrode 8 is formed using a paste composition, and is applied, for example, so as to cover the contact hole 9 (opening) provided in the antireflection film (passivation film) 3 on the back side. Accordingly, the back electrode 8 can be formed by baking after drying. Here, by forming the back electrode 8 using the paste composition of the present invention, high conversion efficiency can be obtained in the solar battery cell, and generation of Sandy on the surface of the electrode layer 5 after firing can be prevented or suppressed. At the same time, generation of voids at the electrode layer interface can be suppressed. In particular, the ability to prevent or suppress the generation of Sandy on the surface of the electrode layer 5 after sintering is useful in terms of preventing poor appearance and cracking when modularizing solar cells.

2. Paste composition The paste composition of the present invention is a solar cell paste composition containing aluminum powder, silicon powder, organic vehicle and glass frit,
The silicon powder has a minimum particle size (Dmin) of a particle size distribution based on volume measured by a laser diffraction scattering method of 5 μm or more and less than 10 μm, and a maximum particle size (Dmax) of the particle size distribution of 10 μm or more and 50 μm or less. Is,
It is characterized by that.

  As described above, by using the paste composition, a back electrode of a solar battery cell such as a PERC solar battery cell can be formed. That is, the paste composition of the present invention is used to form a back electrode for a solar cell that is in electrical contact with a silicon substrate through an opening (contact hole) provided in a passivation film formed on the silicon substrate. it can. According to the paste composition of the present invention, generation of voids at the electrode layer interface is suppressed in a crystalline solar cell (particularly PERC type solar cell), conversion efficiency is good, and the surface of the electrode layer The generation of Sandy can be suppressed. That is, according to the solar cell paste composition of the present invention, it is possible to provide a crystalline solar cell with high conversion efficiency and high long-term reliability in which appearance defects are suppressed.

  The paste composition includes aluminum powder, silicon powder, organic vehicle, and glass frit as constituent components. And since the paste composition contains aluminum powder (conductive material), the sintered body formed by baking the coating film of the paste composition exhibits electrical conductivity that is electrically connected to the silicon substrate. .

(Aluminum powder)
The aluminum powder contained in the paste composition exhibits electrical conductivity in the aluminum electrode layer formed by firing the paste composition. Further, the aluminum powder can obtain the BSF effect by forming the aluminum-silicon alloy layer 6 and the p ⁺ layer 7 between the aluminum powder and the silicon semiconductor substrate 1 when the paste composition is fired.

  The shape of the aluminum powder is not particularly limited, and may be any of a spherical shape, an elliptical shape, an indefinite shape, a scale shape, a fiber shape, and the like. If the shape of the aluminum powder is spherical, in the electrode layer 5 formed of the paste composition, the filling property of the aluminum powder can be increased and the electrical resistance can be effectively reduced. Further, when the shape of the aluminum powder is spherical, the number of contacts between the silicon semiconductor substrate 1 and the aluminum powder is increased in the electrode layer 5 formed of the paste composition, so that a good BSF layer can be easily formed.

  As for the particle diameter of the aluminum powder, it is desirable that the average particle diameter D50 at the time of 50% accumulation calculated based on the volume average particle size distribution measured by a laser diffraction particle size distribution analyzer is 5 μm or more and 20 μm or less. When the particle size distribution of the aluminum powder is less than 5 μm, the aluminum and the silicon semiconductor substrate 1 react excessively to easily generate Sandy, and when the particle size exceeds 20 μm, the surface in contact with the silicon semiconductor substrate 1 decreases and the silicon semiconductor substrate 1 There is a risk that problems such as a decrease in conversion efficiency may occur due to less reaction.

  Moreover, the purity of the aluminum powder is not particularly limited, and a known aluminum powder can be used, but a high-purity aluminum powder of 99.7% or more is particularly preferable. The aluminum powder does not exclude the presence of inevitable impurities and trace amounts of additive elements derived from raw materials.

(Silicon powder)
The silicon powder contained in the paste composition controls excessive reaction between aluminum in the paste composition and silicon in the silicon semiconductor substrate 1 and suppresses void formation at the interface between the aluminum electrode layer 5 and the silicon semiconductor substrate 1. can do.

  The shape of the silicon particles constituting the silicon powder is not particularly limited. Moreover, the content ratio of the silicon powder contained in the paste composition is not particularly limited, but is preferably 5 parts by weight or more and 25 parts by weight or less with respect to 100 parts by weight of the aluminum powder. If the content ratio of the silicon powder is less than 5 parts by weight with respect to 100 parts by weight of the aluminum powder, there is a risk that the formation of voids may be insufficient, and if it exceeds 25 parts by weight, the electrical resistance of the aluminum electrode layer 5 increases and conversion efficiency increases. May decrease.

  The silicon powder has a minimum particle size (Dmin) of a particle size distribution based on volume measured by a laser diffraction scattering method of 5 μm or more and less than 10 μm, and a maximum particle size (Dmax) of the particle size distribution of 10 μm or more and 50 μm or less. As a result, it is possible to ensure good conversion efficiency while suppressing generation of voids. Even within these ranges, Dmin is preferably 5 μm to 9 μm, and more preferably 5 μm to 8 μm. Dmax is preferably 11 μm or more and 30 μm or less, and more preferably 11 μm or more and 20 μm or less.

(Organic vehicle)
As the organic vehicle, a material in which various additives and resins are dissolved in a solvent as required can be used. Alternatively, the resin itself may be used as the organic vehicle without containing the solvent.

  As the solvent, known types can be used, and specific examples include diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether and the like.

  As various additives, for example, an antioxidant, a corrosion inhibitor, an antifoaming agent, a thickener, a tack fire, a coupling agent, an electrostatic imparting agent, a polymerization inhibitor, a thixotropic agent, an antisettling agent, etc. are used. be able to. Specifically, for example, polyethylene glycol ester compound, polyethylene glycol ether compound, polyoxyethylene sorbitan ester compound, sorbitan alkyl ester compound, aliphatic polycarboxylic acid compound, phosphate ester compound, amide amine salt of polyester acid, polyethylene oxide Series compounds, fatty acid amide waxes and the like can be used.

  Known resins can be used, such as ethyl cellulose, nitrocellulose, polyvinyl butyral, phenolic resin, melanin resin, urea resin, xylene resin, alkyd resin, unsaturated polyester resin, acrylic resin, polyimide resin, furan resin, Thermosetting resin such as urethane resin, isocyanate compound, cyanate compound, polyethylene, polypropylene, polystyrene, ABS resin, polymethyl methacrylate, polyvinyl chloride, polyvinylidene chloride, polyvinyl acetate, polyvinyl alcohol, polyacetal, polycarbonate, polyethylene terephthalate, Polybutylene terephthalate, polyphenylene oxide, polysulfone, polyimide, polyethersulfone, polyarylate, polyetheretherke Emissions, polytetrafluoroethylene, can be used in combination of two or more kinds of such as silicon resin.

  The ratio of the resin, solvent, and various additives contained in the organic vehicle can be arbitrarily adjusted. For example, the component ratio can be the same as that of a known organic vehicle.

  Although content of an organic vehicle is not specifically limited, For example, it is preferable that it is 10-500 mass parts with respect to 100 mass parts of aluminum powder from a viewpoint that it has favorable printability, and it is 20-45 mass parts. Is particularly preferred.

(Glass frit)
The glass powder is said to have an effect of assisting the reaction between the aluminum powder and silicon and the sintering of the aluminum powder itself.

  It does not specifically limit as glass powder, For example, it can be set as the well-known glass component contained in the paste composition currently used in order to form the electrode layer of a photovoltaic cell. Specific examples of the glass powder include lead (Pb), bismuth (Bi), vanadium (V), boron (B), silicon (Si), tin (Sn), phosphorus (P), and zinc (Zn). And at least one selected from. In addition, lead-containing glass powder, or lead-free glass powder such as bismuth, vanadium, tin-phosphorus, zinc borosilicate, or alkali borosilicate can be used. In view of the influence on the human body, it is desirable to use lead-free glass powder.

Specifically glass _{powder, B 2 O 3, Bi 2} O 3, ZnO, SiO 2, Al 2 O 3, BaO, CaO, SrO, V 2 O 5, Sb 2 O 3, WO 3, P 2 O 5 And at least one component selected from the group consisting of TeO ₂ . For example, in a glass powder, a glass frit having a molar ratio (B ₂ O ₃ / Bi ₂ O ₃ ) of B ₂ O ₃ component to Bi ₂ O ₃ component of 0.8 or more and 4.0 or less, and V ₂ O ₅ molar ratio of the component and the BaO component _{(V 2} O 5 / BaO) may be combined with the glass frit is 1.0 to 2.5.

  The softening point of glass powder can be made into 750 degrees C or less, for example. The average particle diameter of the particles contained in the glass powder can be, for example, 1 to 3 μm.

  It is preferable that content of the glass powder contained in a paste composition is 1-8 mass parts with respect to 100 mass parts of aluminum powder, for example. With such a content, the adhesion between the silicon semiconductor substrate 1 and the antireflection film 3 (passivation film) is good, and the electrical resistance is hardly increased.

  As described above, the paste composition of the present invention contains 5 to 25 parts by mass of silicon powder, 20 to 45 parts by mass of organic vehicle, and 1 to 8 parts by mass of glass frit with respect to 100 parts by mass of aluminum powder. The composition is particularly preferred. By setting to such a range, generation of voids at the electrode layer interface is suppressed in a crystalline solar cell (particularly PERC type solar cell), conversion efficiency is good, and Sandy on the surface of the electrode layer is good. Generation can be suppressed.

  The paste composition of the present invention is suitable for use, for example, for forming an electrode layer of a solar battery cell (particularly, a back electrode 8 of a PERC type solar battery cell as shown in FIG. 1). Therefore, the paste composition of this invention can be used also as a solar cell back surface electrode formation agent.

  The present invention will be specifically described below with reference to examples and comparative examples. However, the present invention is not limited to the examples.

Example 1
(Preparation of paste composition)
100 parts by mass of D ₅₀ : 6 μm aluminum powder (Al purity 99.7%) produced by gas atomization method, 20 parts by mass of silicon powder (Dmin: 5 μm, Dmax: 10 μm), and glass frit B ₂ O ₃ —Bi ₂ O ₃ —SrO—BaO—Sb ₂ O ₃ = 3 parts by mass of 40/40/10/5/5 (mol%) in this order, and 35 parts by mass of a resin solution obtained by dissolving ethyl cellulose in butyl diglycol ) To make a paste. This obtained the paste composition.

(Preparation of a fired substrate that is a solar cell)
A fired substrate as a solar cell for evaluation was produced as follows.

  First, as shown in FIG. 2A, first, a silicon semiconductor substrate 1 having a thickness of 180 μm (including a passivation film on the back surface side) was prepared. 2B, a contact hole 9 having a width D of 50 μm and a depth of 1 μm was formed on the back surface of the silicon semiconductor substrate 1 using a YAG laser having a wavelength of 532 nm as a laser oscillator. This silicon semiconductor substrate 1 had a resistance value of 3 Ω · cm and was a back surface passivation type single crystal.

  In FIG. 2, the passivation film is not shown and is handled as being included in the silicon semiconductor substrate 1, and the passivation film is a laminate of a 30 nm aluminum oxide layer and a 100 nm silicon nitride layer on the back side of the silicon semiconductor substrate 1. Included as a body.

  Next, as shown in FIG. 2C, the paste composition 10 obtained above is applied to the surface of the silicon semiconductor substrate 1 so as to cover the entire back surface (the surface on the side where the contact holes 9 are formed). On the top, it printed so that it might become 1.0-1.1 g / pc using the screen printer. Next, although not shown, an Ag paste prepared by a known technique was printed on the light receiving surface.

Then, it baked using the infrared belt furnace set to 800 degreeC. By this firing, as shown in FIG. 2D, an electrode layer 5 is formed, and during the firing, aluminum diffuses into the silicon semiconductor substrate 1 so that the electrode layer 5 and the silicon semiconductor substrate At the same time, an Al—Si alloy layer 6 was formed between the p ⁺ layer 1 and the p ⁺ layer (BSF layer) 7 as an impurity layer by diffusion of aluminum atoms. Thereby, a fired substrate for evaluation was manufactured.

(Evaluation of solar cells)
In the evaluation of the obtained photovoltaic cell, IV measurement was performed using Wacom Denso's solar simulator: WXS-156S-10, IV measuring device: IV15040-10. Eff was evaluated to be good conversion characteristics at 18.6% or more.

(Check for voids and electrical resistance)
About evaluation of a void, the cross section of each sample of the obtained baking board | substrate was observed with the optical microscope (200 time), and the presence or absence of the void in a board | substrate and an aluminum electrode layer interface was evaluated. The case where no cavities were formed was marked with ◯, and the case where cavities were 20% or more was marked with x.

  About evaluation of electrical resistance, it measured by the 4-terminal measuring method using the sheet resistance measuring device RT-70V made from Napson.

(Confirmation of the presence or absence of Sandy)
The presence or absence of Sandy was confirmed using an optical microscope (50 times magnification).

  The case where Sandy was not confirmed at all was marked with ◯, and the case where Sandy was confirmed was marked with X. In addition, only ○ evaluation is a pass.

Example 2
A paste composition was prepared and evaluated in the same manner as in Example 1 except that silicon powder (Dmin: 5 μm, Dmax: 50 μm) was used.

Example 3
A paste composition was prepared and evaluated in the same manner as in Example 1 except that silicon powder (Dmin: 8 μm, Dmax: 50 μm) was used.

Comparative Example 1
A paste composition was prepared and evaluated in the same manner as in Example 1 except that silicon powder (Dmin: 0.1 μm, Dmax: 1 μm) was used.

Comparative Example 2
A paste composition was prepared and evaluated in the same manner as in Example 1 except that silicon powder (Dmin: 1 μm, Dmax: 10 μm) was used.

Comparative Example 3
A paste composition was prepared and evaluated in the same manner as in Example 1 except that silicon powder (Dmin: 3 μm, Dmax: 10 μm) was used.

Comparative Example 4
A paste composition was prepared and evaluated in the same manner as in Example 1 except that silicon powder (Dmin: 5 μm, Dmax: 60 μm) was used.

Comparative Example 5
A paste composition was prepared and evaluated in the same manner as in Example 1 except that silicon powder (Dmin: 10 μm, Dmax: 50 μm) was used.

  The conditions of each Example and Comparative Example and each evaluation result are shown in Table 1 below.

  From the results in Table 1, by using the paste compositions of Examples 1 to 3 containing the silicon powder of the present invention, the generation of voids at the electrode layer interface in the crystalline solar cell is suppressed, and the conversion efficiency And the generation of Sandy on the surface of the electrode layer can be suppressed.

1: silicon semiconductor substrate 2: n-type impurity layer 3: antireflection film (passivation film)
4: Grid electrode 5: Electrode layer 6: Alloy layer 7: p + layer 8: Back electrode 9: Contact hole (opening)
10: Paste composition

Claims (3)

A solar cell paste composition containing aluminum powder, silicon powder, organic vehicle and glass frit,
The silicon powder has a minimum particle size (Dmin) of a particle size distribution based on volume measured by a laser diffraction scattering method of 5 μm or more and less than 10 μm, and a maximum particle size (Dmax) of the particle size distribution of 10 μm or more and 50 μm or less. Is,
A solar cell paste composition characterized by the above.   The glass frit is selected from the group consisting of lead (Pb), bismuth (Bi), vanadium (V), boron (B), silicon (Si), tin (Sn), phosphorus (P) and zinc (Zn). The solar cell paste composition according to claim 1, comprising at least one of the following.   3 or 5 parts by mass of the silicon powder, 20 to 45 parts by mass of the organic vehicle, and 1 to 8 parts by mass of the glass frit with respect to 100 parts by mass of the aluminum powder. The paste composition for solar cells as described.