JP2018195797A - 光電変換装置 - Google Patents
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- JP2018195797A JP2018195797A JP2018000465A JP2018000465A JP2018195797A JP 2018195797 A JP2018195797 A JP 2018195797A JP 2018000465 A JP2018000465 A JP 2018000465A JP 2018000465 A JP2018000465 A JP 2018000465A JP 2018195797 A JP2018195797 A JP 2018195797A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 58
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- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 255
- 229910021404 metallic carbon Inorganic materials 0.000 claims abstract description 74
- 239000002109 single walled nanotube Substances 0.000 claims description 11
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- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
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- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
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- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
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Abstract
Description
S11、基板11を提供し、基板11の表面に触媒層12を堆積させる。
S12、基板11を反応炉13に設置し、反応炉を所定の温度に加熱し、反応炉13に炭素源ガス14及び保護ガス15を導入して、基板11にカーボンナノチューブアレイ16を成長させ、カーボンナノチューブアレイ16は複数のカーボンナノチューブセグメントを含む。
S13、カーボンナノチューブアレイ16に電界を印加して、電界向きは触媒層を正電荷に帯電させる方向であり、電界向きを反転させて、カーボンナノチューブセグメントから半導体性カーボンナノチューブセグメントを成長させる。
12 触媒層
13 反応炉
14 炭素源ガス
15 保護ガス
16、20 カーボンナノチューブアレイ
30、40 薄膜トランジスタ
31、41 絶縁基板
32、46 ゲート電極
33 ゲート絶縁層
34、42、51、64、74 カーボンナノチューブ構造体
35、43 ソース電極
36、44 ドレイン電極
341、342、421、422、641、642 金属性カーボンナノチューブセグメント
343、423、643 半導体性カーボンナノチューブセグメント
45 絶縁層
50 光検出器
52、65 第一電極
53、66 第二電極
54 電流検出装置
55 電源
60、70 光電変換装置
61、71 光電変換モジュール
62、72 カバー構造体
643a 第一領域
643b 第二領域
Claims (5)
- 光電変換モジュールと、カバー構造体と、を含む光電変換装置であって、
光電変換モジュールはカーボンナノチューブ構造体を含み、
前記カーボンナノチューブ構造体は少なくとも一本のカーボンナノチューブを含み、
少なくとも一本の前記カーボンナノチューブは二つの金属性カーボンナノチューブセグメント及び一つの半導体性カーボンナノチューブセグメントを含み、二つの前記金属性カーボンナノチューブセグメントは一つの前記半導体性カーボンナノチューブセグメントの対向する両端とそれぞれ接続され、
前記半導体性カーボンナノチューブセグメントの一部は前記カバー構造体に被覆されることを特徴とする光電変換装置。 - 前記カーボンナノチューブ構造体は複数の前記カーボンナノチューブを含み、複数の前記カーボンナノチューブは分子間力によって密接に結合され、且つ平行して同じ方向に沿って配列されることを特徴とする請求項1に記載の光電変換装置。
- 隣接する前記カーボンナノチューブの金属性カーボンナノチューブセグメントの長さは同じであり、隣接する前記カーボンナノチューブの半導体性カーボンナノチューブセグメントの長さは同じであることを特徴とする請求項2に記載の光電変換装置。
- 前記カーボンナノチューブは単層カーボンナノチューブであり、前記単層カーボンナノチューブの直径は2nmより小さいことを特徴とする請求項1に記載の光電変換装置。
- 少なくとも一本の前記カーボンナノチューブは複数の前記半導体性カーボンナノチューブセグメント及び複数の前記金属性カーボンナノチューブセグメントを含み、
複数の前記半導体性カーボンナノチューブセグメント及び複数の前記金属性カーボンナノチューブセグメントは交互に配列され、
各前記半導体性カーボンナノチューブセグメントの一部は前記カバー構造体に被覆されることを特徴とする請求項1に記載の光電変換装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710347907.9 | 2017-05-17 | ||
CN201710347907.9A CN108963078B (zh) | 2017-05-17 | 2017-05-17 | 光电转换装置 |
Publications (2)
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JP2018195797A true JP2018195797A (ja) | 2018-12-06 |
JP6554565B2 JP6554565B2 (ja) | 2019-07-31 |
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JP2018000465A Active JP6554565B2 (ja) | 2017-05-17 | 2018-01-05 | 光電変換装置 |
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US (1) | US10381568B2 (ja) |
JP (1) | JP6554565B2 (ja) |
CN (1) | CN108963078B (ja) |
TW (1) | TWI668179B (ja) |
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