JP2018194608A - Substrate treatment system, substrate treatment method, program and information storage medium - Google Patents

Abstract

To provide a substrate treatment system by which a desired resist pattern can be obtained by local exposure and development after the local exposure when a resist film entirely or partially has a large film thickness.SOLUTION: The substrate treatment system includes: an exposure device 14 for subjecting a resist film formed on a substrate to pattern exposure; a first development device 15 for developing the resist film subjected to the pattern exposure by the exposure device 14 to form a resist pattern; a local exposure device 21 for locally exposing the resist film so as to correct the resist pattern obtained by the first development device 15; and a second development device 25 for developing the resist film exposed by the local exposure device 21.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a substrate processing system, a substrate processing method, a program, and an information storage medium.

  Photolithography is used in the manufacture of FPDs (flat panel displays) and the like. Photolithography is a technique in which a photoresist film (hereinafter simply referred to as “resist film”) is subjected to pattern exposure, and the resist film subjected to pattern exposure is developed to form a resist pattern.

  The local exposure apparatus described in Patent Document 1 locally exposes a resist film before development. In addition to normal pattern exposure, local exposure is performed on an arbitrary portion where the film thickness is desired to be reduced. Thereby, for example, the in-plane variation of the remaining film thickness of the resist pattern can be reduced after development.

JP 2013-84000 A

  In Patent Document 1, (1) development is performed after pattern exposure and local exposure, or (2) local exposure, first development, pattern exposure, and second development are performed in this order.

  By the way, the local exposure light is more easily attenuated by the resist film than the pattern exposure light, and is difficult to reach the deep part of the resist film.

  Therefore, when the thickness of the resist film is entirely or partially thick, the local exposure light does not reach the depth of the resist film sufficiently, and it is difficult to obtain a desired resist pattern by local exposure and development after local exposure. Met.

  The present invention has been made in view of the above problems, and when the thickness of the resist film is entirely or partially thick, a desired resist pattern can be obtained by local exposure and development after local exposure. The main purpose is to provide a substrate processing system.

In order to solve the above problems, according to one aspect of the present invention,
An exposure apparatus for pattern exposure of a resist film formed on a substrate;
A first developing device for developing the resist film pattern-exposed by the exposure device to form a resist pattern;
A local exposure apparatus for locally exposing the resist film in order to correct the resist pattern obtained by the first developing device;
There is provided a substrate processing system comprising: a second developing device that develops the resist film exposed by the local exposure device.

  According to one embodiment of the present invention, there is provided a substrate processing system capable of obtaining a desired resist pattern by local exposure and development after local exposure when the thickness of the resist film is entirely or partially thick. The

It is a top view showing a substrate processing system by one embodiment. It is a top view which shows the substrate processing system by a modification. It is a side view which shows arrangement | positioning of the 1st developing device by a modification, a local exposure apparatus, and a 2nd developing device. It is sectional drawing which shows the local exposure apparatus by one Embodiment. It is a top view which shows the local exposure apparatus by one Embodiment. It is a top view which shows the division where local exposure by one Embodiment is performed by a coordinate. It is a table | surface which shows the setting parameter of the light emission control program by one Embodiment. It is a flowchart which shows the substrate processing method by one Embodiment. It is a figure which shows application | coating of the resist film by one Embodiment. It is a figure which shows the pattern exposure of the resist film by one Embodiment. It is a figure which shows the 1st image development of the resist film by one Embodiment. It is a figure which shows the local exposure of the resist film by one Embodiment. It is a figure which shows the 2nd image development of the resist film by one Embodiment. It is a figure which shows the relationship between the illumination intensity of the light of local exposure, and the variation | change_quantity of the line | wire width by local exposure on the conditions with the constant film thickness of the resist film by one Embodiment.

  Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In the drawings, the same or corresponding components are denoted by the same or corresponding reference numerals, and description thereof is omitted.

<Substrate processing system>
FIG. 1 is a plan view showing a substrate processing system according to an embodiment. In FIG. 1, the X direction, the Y direction, and the Z direction are directions perpendicular to each other. The X direction and the Y direction are horizontal directions, and the Z direction is a vertical direction.

  The substrate processing system 1 forms a resist pattern 9 (see FIG. 13) on a substrate G. In the present embodiment, the resist film 5 on which the resist pattern 9 is formed is a positive type in which the exposed portion is removed by development, but may be a negative type in which the exposed portion remains after development. The substrate processing system 1 is a flat flow system that performs various processes on the substrate G while horizontally transporting the substrate G with a roller or the like. The substrate processing system 1 is not limited to the flat flow method.

  The substrate processing system 1 includes a first processing line 2 and a second processing line 3. The first processing line 2 includes two straight lines extending in the X direction and a connection line extending in the Y direction so as to connect the X direction ends of the two straight lines. The second processing line 3 has two straight lines extending in the X direction, and the two straight lines are folded back at the ends in the X direction. The end of the first processing line 2 on the downstream side in the transport direction and the end of the second processing line 3 on the upstream side in the transport direction are adjacent to each other in the Y direction.

  The first processing line 2 includes a cleaning device 11, a coating device 12, a pre-baking device 13, an exposure device 14, a first developing device 15, and a conveyor 20 in this order along the conveyance direction of the substrate G.

  The cleaning device 11 cleans the substrate G. The cleaning device 11 cleans the upper surface of the substrate G while horizontally transporting the substrate G with a roller or the like. The cleaning includes, for example, ultraviolet cleaning, scrubber cleaning, and the like. In the ultraviolet cleaning, organic substances attached to the substrate G are removed.

  The coating apparatus 12 applies a resist solution to the substrate G to form a resist film 5 (see FIG. 9). A predetermined functional film 6 is formed in advance on the substrate G, and a resist film 5 is formed on the functional film 6. Examples of the functional film 6 include a conductive film. The coating apparatus 12 applies a resist solution to the substrate G from a nozzle discharge port extending in a direction (Y direction) orthogonal to the transport direction (X direction) of the substrate G while transporting the substrate G horizontally with a roller or the like.

  The pre-baking device 13 heats the resist film 5 on the substrate G with a heater or the like. The solvent of the resist solution remaining on the resist film 5 on the substrate G is evaporated and removed, and the adhesion of the resist film 5 to the substrate G is enhanced. Thereafter, the substrate G may be cooled to a predetermined temperature.

  The exposure device 14 performs pattern exposure on the resist film 5 formed on the substrate G. The exposure device 14 transfers the mask pattern 7 (see FIG. 10) to the resist film 5 with light. The mask pattern 7 may be reduced and projected onto the resist film 5. The mask pattern 7 may be a halftone mask.

  The first developing device 15 develops the resist film 5 subjected to pattern exposure by the exposure device 14 to form a resist pattern 8 (see FIG. 11). For example, the first developing device 15 supplies the developer and the rinsing liquid to the substrate G in this order while horizontally transporting the substrate G with a roller or the like, and then dries the substrate G with an air knife or the like. The transport path for transporting the substrate G of the first developing device 15 may alternately include a horizontal path for transporting the substrate G horizontally and an inclined path for tilting the substrate G. A developing solution and a rinsing liquid are supplied to the substrate G on the horizontal path, and the developing solution and the rinsing liquid are dropped from the substrate G on the inclined path.

  The conveyor 20 transports the substrate G horizontally with a roller or the like from the first developing device 15 to the vicinity of the end of the second processing line 3 on the upstream side in the transport direction. The board | substrate G conveyed by the conveyor 20 may be conveyed to the edge part of the conveyance direction upstream of the 2nd processing line 3 with a conveyance apparatus not shown.

  Incidentally, the resist pattern 8 obtained by the first developing device may deviate from the target pattern. For example, the line width, hole diameter, remaining film thickness, etc. may be shifted. The deviation occurs in the same way in a specific region of the substrate G every time.

  Therefore, the second processing line 3 includes the local exposure device 21, the second developing device 25, the post-baking device 31, and the conveyor 32 in this order along the conveyance direction of the substrate G.

  The local exposure device 21 locally exposes the resist film 5 in order to correct the resist pattern 8 obtained by the first developing device 15. The local exposure apparatus 21 locally exposes the resist film 5 in order to reduce in-plane variations such as the line width, hole diameter, and remaining film thickness of the resist pattern 8, for example.

  The local exposure apparatus 21 divides the substrate G into a plurality of sections in the first direction (X direction) and the second direction (Y direction), and requires a correction of the resist pattern 8 obtained by the first developing device 15. Are locally exposed (see FIG. 12). The illuminance of light is variable for each section. Details of the local exposure apparatus 21 will be described later.

  The second developing device 25 develops the resist film 5 exposed by the local exposure device 21 to form a resist pattern 9 (see FIG. 13). The second developing device 25 supplies the developing solution and the rinsing liquid to the substrate G in this order while horizontally transporting the substrate G with a roller or the like, and then dries the substrate G with an air knife or the like. The transport path for transporting the substrate G of the second developing device 25 may alternately include a horizontal path for transporting the substrate G horizontally and an inclined path for tilting the substrate G. A developing solution and a rinsing liquid are supplied to the substrate G on the horizontal path, and the developing solution and the rinsing liquid are dropped from the substrate G on the inclined path.

  The post-bake device 31 heats the resist film 5 on the substrate G with a heater or the like. The developer and the rinsing liquid remaining on the resist film 5 on the substrate G are evaporated and removed, and the adhesion of the resist film 5 to the substrate G is enhanced. Thereafter, the substrate G may be cooled to a predetermined temperature.

  The conveyor 32 conveys the substrate G by a roller or the like from the post-baking device 31 to the end of the second processing line 3 on the downstream side in the conveyance direction. A transport device that receives the substrate G from the conveyor 32 and transports it to a predetermined position is disposed downstream of the second processing line 3 in the transport direction.

  The substrate processing system 1 includes a control device 50. The control device 50 is configured by a computer, for example, and includes a CPU (Central Processing Unit) 51, a storage medium 52 such as a memory, an input interface 53, and an output interface 54 as shown in FIG. The control device 50 performs various controls by causing the CPU 41 to execute a program stored in the storage medium 52. In addition, the control device 50 receives a signal from the outside through the input interface 53 and transmits a signal to the outside through the output interface 54.

  The program of the control device 50 is stored in the information storage medium and installed from the information storage medium. Examples of the information storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), and a memory card. The program may be downloaded from a server via the Internet and installed.

  The substrate processing system 1 is not limited to the configuration shown in FIG. FIG. 2 is a plan view showing a substrate processing system according to a modification. A substrate processing system 1A shown in FIG. 2 has a processing line 2A. The processing line 2A includes two straight lines extending in the X direction and a connection line extending in the Y direction so as to connect ends of the two straight lines. The processing line 2A includes a cleaning device 11, a coating device 12, a pre-baking device 13, an exposure device 14, a first developing device 15, a local exposure device 21, a second developing device 25, and a post-bake along the conveyance direction of the substrate G. It has the apparatus 31 in this order. The first developing device 15, the local exposure device 21, and the second developing device 25 are arranged in the horizontal direction in FIG. 2, but may be arranged in the vertical direction as shown in FIG.

  FIG. 3 is a side view showing an arrangement of a first developing device, a local exposure device, and a second developing device according to a modification. In FIG. 3, the first developing device 15, the local exposure device 21, and the second developing device 25 are arranged in this order from the upper side to the lower side.

  The first developing device 15 includes a developing unit 16 that supplies a developing solution onto the substrate G along the transport direction of the substrate G, a replacement unit 17 that replaces the developing solution remaining on the substrate G with a rinsing solution, and the substrate G. A rinsing unit 18 for cleaning with a rinsing liquid and a drying unit 19 for drying the substrate G are provided in this order. The developing unit 16, the replacement unit 17, and the rinse unit 18 may alternately include a horizontal path that transports the substrate G horizontally and an inclined path that tilts the substrate G, respectively. Developer or the like is supplied to the substrate G on the horizontal path, and developer or the like is dropped from the substrate G on the inclined path.

  Similarly, the second developing device 25 includes a developing unit 26 that supplies a developing solution onto the substrate G along the conveyance direction of the substrate G, a replacement unit 27 that replaces the developing solution remaining on the substrate G with a rinsing solution, A rinsing unit 28 for cleaning the substrate G with a rinsing liquid and a drying unit 29 for drying the substrate G are provided in this order. The developing unit 26, the replacement unit 27, and the rinsing unit 28 may alternately include a horizontal path that transports the substrate G horizontally and an inclined path that tilts the substrate G, respectively. Developer or the like is supplied to the substrate G on the horizontal path, and developer or the like is dropped from the substrate G on the inclined path.

  A local exposure device 21 is provided at the center in the vertical direction of the first developing device 15 and the second developing device 25. After the substrate G is lowered from the first developing device 15, it is horizontally transported by the conveyor 22 and is carried into the local exposure device 21. Thereafter, the substrate G is unloaded from the local exposure device 21, horizontally transported by the conveyor 23, and then lowered to the second developing device 25.

  In FIG. 3, the first developing device 15, the local exposure device 21, and the second developing device 25 are arranged in this order from the upper side to the lower side, but the order may be reversed. That is, the first developing device 15, the local exposure device 21, and the second developing device 25 may be arranged in this order from the lower side to the upper side.

<Local exposure apparatus>
FIG. 4 is a sectional view showing a local exposure apparatus according to an embodiment. FIG. 5 is a plan view showing a local exposure apparatus according to an embodiment. The local exposure apparatus 21 divides the substrate G into a plurality of sections in the first direction (X direction) and the second direction (Y direction), and requires a correction of the resist pattern 8 obtained by the first developing device 15. Is locally exposed. The illuminance of light is variable for each section.

  The local exposure apparatus 21 has a substrate transport path 61 that transports the substrate G in the X direction. As shown in FIG. 5, the substrate transport path 61 has a plurality of cylindrical rollers 62 extending in the Y direction at intervals in the X direction. Each roller 62 rotates around its rotating shaft 63, whereby the substrate G is transported in the X direction. The plurality of rotating shafts 63 are connected by a belt 64 or the like and rotate synchronously. One of the plurality of rotating shafts 63 that rotate synchronously is connected to a roller driving device 65 such as a motor.

  The local exposure apparatus 21 includes a chamber 66 that forms an exposure processing space for the substrate G. The substrate transfer path 61 penetrates through the chamber 66 in the X direction. At one end of the chamber 66 in the X direction, a carry-in port 67 for carrying the substrate G on the substrate transfer path 61 into the exposure processing space is provided. On the other hand, the other end in the X direction of the chamber 66 is provided with a carry-out port 68 for carrying the substrate G on the substrate transfer path 61 out of the exposure processing space.

  The local exposure apparatus 21 includes a light irradiator 70 that performs local exposure (UV light emission) on the substrate G above the substrate transport path 61 in the chamber 66. The light irradiator 70 includes a line light source 71 extending in the Y direction, a housing 73 that accommodates the line light source 71, and a light emission window 74 provided on the lower surface of the housing 73. The light emission window 74 includes a light diffusing plate, and is disposed between the line light source 71 and the substrate G that is an object to be irradiated. The light emitted from the line light source 71 is appropriately diffused by the light emission window 74.

  The line light source 71 has a plurality of light emitting elements 72 arranged linearly along the Y direction on the circuit board 75. The light emitting element 72 may be a UV-LED element that emits UV light having a predetermined wavelength (for example, a wavelength close to any of g-line (436 nm), h-line (405 nm), and i-line (364 nm)). Since the light emitted from the line light source 71 is moderately diffused by the light emission window 74, the light from the adjacent light emitting elements 72 is connected in a line and irradiated downward.

  The local exposure apparatus 21 includes a light emission drive unit 76 that drives the light emitting elements 72 to emit light independently. The light emission driving unit 76 changes the forward current value supplied to each light emitting element 72 under the control of the control device 50. Each light emitting element 72 emits light with irradiance corresponding to the forward current value supplied by the light emission driving unit 76. The plurality of light emitting elements 72 are arranged in a straight line in the present embodiment, but the arrangement is not particularly limited.

  The local exposure apparatus 21 includes a lifting shaft 77 that supports the light irradiator 70 from below, and a lifting drive unit 78 that lifts and lowers the lifting shaft 77. The lifting drive unit 78 includes a motor and a ball screw that converts the rotational motion of the motor into a linear motion of the lifting shaft 77. The raising / lowering drive part 78 can make the height of the light irradiation device 70 with respect to the board | substrate G conveyed by the board | substrate conveyance path 61 variable by raising / lowering the raising / lowering axis | shaft 77 under control of the control apparatus 50.

  The local exposure apparatus 21 includes an illuminance sensor 81 for detecting the illuminance (radiant flux) of light emitted from the line light source 71 and passed through the light emission window 74 in the chamber 66, and the illuminance sensor 81 in the X direction (conveying the substrate G). A first horizontal movement drive unit 82 that moves in the direction), and a second horizontal movement drive unit 83 that moves the illuminance sensor 81 in the Y direction (the extending direction of the line light source 71). The illuminance sensor 81 detects the illuminance at an arbitrary position in the Y direction below the light emission window 74 and supplies a signal indicating the detection result to the control device 50. The first horizontal movement driving unit 82 and the second horizontal movement driving unit 83 are controlled by the control device 50.

  The local exposure apparatus 21 includes, for example, a substrate detection sensor 90 that detects a predetermined location (for example, the front end) of the substrate G on the substrate transport path 61 on the upstream side of the carry-in port 67 of the chamber 66. The substrate detection sensor 90 outputs the detection signal to the control device 50. The control device 50 can grasp the timing at which a predetermined section of the substrate G passes directly below the line light source 71 based on the elapsed time from reception of the detection signal of the substrate detection sensor 90 and the transport speed of the substrate G.

  FIG. 6 is a plan view showing, in coordinates, sections where local exposure is performed according to an embodiment. In FIG. 6, AR represents a region where local exposure is performed. The area AR may be composed of a plurality of sections. FIG. 7 is a table showing setting parameters of the light emission control program according to one embodiment.

  The control device 50 has a light emission control program P for controlling the forward current value of each light emitting element 72 at a predetermined timing in a predetermined storage area of the storage medium 52. The light emission control program P manages information by dividing the substrate G into a plurality of sections in the transport direction (X direction) and the width direction (Y direction) as shown in FIG. The light emission control program P includes, as setting parameters, for example, as shown in FIG. 7, coordinates of a section where local exposure is performed, identification information (for example, an identification number) and forward current value of a light emitting element 72 which performs local exposure of the section. .

  The setting parameter of the light emission control program P is set based on the result of a preparatory test performed in advance. In the preparatory test, (1) the deviation from the target pattern of the resist pattern 8 after the first development and before the local exposure, the section where the deviation occurs, and (2) the illumination intensity of the local exposure light and the local exposure in each section The relationship (for example, the relationship shown in FIG. 14) with the amount of change in the resist pattern due to is investigated. The setting parameters are set so that the resist pattern 9 obtained after the second development matches the target pattern.

<Substrate processing method>
Next, a substrate processing method using the substrate processing system 1 configured as described above will be described with reference to FIGS. FIG. 8 is a flowchart illustrating a substrate processing method according to an embodiment. The substrate processing shown in FIG. 8 is performed under the control of the control device 50. FIG. 9 is a diagram illustrating application of a resist film according to an embodiment. FIG. 10 is a diagram showing pattern exposure of a resist film according to one embodiment. FIG. 11 is a diagram illustrating the first development of the resist film according to one embodiment. FIG. 12 is a diagram illustrating local exposure of a resist film according to an embodiment. FIG. 13 is a diagram illustrating the second development of the resist film according to one embodiment. In FIG. 13, the outer shape of the resist film before the second development is indicated by a two-dot chain line.

  In the cleaning step S101 of FIG. 3, the cleaning device 11 cleans the substrate G. The cleaning device 11 cleans the upper surface of the substrate G while horizontally transporting the substrate G with a roller or the like. The cleaning includes, for example, ultraviolet cleaning, scrubber cleaning, and the like. In the ultraviolet cleaning, organic substances attached to the substrate G are removed.

  In the coating step S102, the coating apparatus 12 applies a resist solution to the substrate G to form a resist film 5 (see FIG. 9). A predetermined functional film 6 is formed in advance on the substrate G, and a resist film 5 is formed on the functional film 6. Examples of the functional film 6 include a conductive film. The coating apparatus 12 applies a resist solution to the substrate G from a nozzle discharge port extending in a direction (Y direction) orthogonal to the transport direction (X direction) of the substrate G while transporting the substrate G horizontally with a roller or the like.

  In the pre-baking step S103, the pre-baking device 13 heats the resist film 5 on the substrate G with a heater or the like. The solvent of the resist solution remaining on the resist film 5 on the substrate G is evaporated and removed, and the adhesion of the resist film 5 to the substrate G is enhanced. Thereafter, the substrate G may be cooled to a predetermined temperature.

  In the exposure step S104, the exposure apparatus 14 performs pattern exposure on the resist film 5 formed on the substrate G. The exposure device 14 transfers the mask pattern 7 (see FIG. 10) to the resist film 5 with light. The mask pattern 7 may be reduced and projected onto the resist film 5. The mask pattern 7 may be a halftone mask.

  In the first developing step S105, the first developing device 15 develops the resist film 5 subjected to pattern exposure by the exposure device 14 to form a resist pattern 8 (see FIG. 11). In the first development step S105, the developer is supplied onto the substrate G, the developer remaining on the substrate G is replaced with a rinse solution, the substrate G is washed with a rinse solution, and the substrate G is dried. In this order.

  By the way, the resist pattern 8 obtained in the first developing step S105 may deviate from the target pattern. For example, the line width, hole diameter, remaining film thickness, etc. may be shifted. The deviation occurs in the same way in a specific region of the substrate G every time.

  Therefore, in the local exposure step S106, the local exposure device 21 locally exposes the resist film 5 in order to correct the resist pattern 8 obtained in the first development step S105. In the local exposure step S106, the resist film 5 is locally exposed in order to reduce in-plane variations such as the line width, hole diameter, and remaining film thickness of the resist pattern 8, for example.

  In the local exposure step S106, the substrate G is divided into a plurality of sections in the first direction (X direction) and the second direction (Y direction), and the sections that require correction of the resist pattern obtained by the first developing device 15 are formed. Exposure is performed locally (see FIG. 12). In order to make the illuminance of light variable for each section, the plurality of light emitting elements 72 are driven to emit light independently.

  According to the present embodiment, the first development step S105 is performed after the exposure step S104 and before the local exposure step S106. Unlike the local exposure light, the pattern exposure light reaches the deep part of the resist film 5 (part close to the functional film 6) without being attenuated by the resist film 5. For this reason, a part of the resist film 5 is removed in the first developing step S105, and light is not easily attenuated in the local exposure step S106 in the removed part, so that the light easily reaches the deep part of the resist film 5. Therefore, when the film thickness of the resist film 5 is entirely or partially thick, a desired resist pattern can be obtained by local exposure and development after local exposure.

  In the second developing step S107, the second developing device 25 develops the resist film 5 exposed by the local exposure device 21 to form a resist pattern 9 (see FIG. 13). In the second development step S107, the developer is supplied onto the substrate G, the developer remaining on the substrate G is replaced with a rinse solution, the substrate G is washed with the rinse solution, and the substrate G is dried. In this order.

  When the resist film 5 is a positive type, the line width (opening width) CD2 of the resist pattern 9 obtained in the second development step S107 in the section where the local exposure is performed is the resist pattern 8 obtained in the first development step S105. The line width (opening width) is larger than CD1. Hereinafter, a difference (CD2−CD1) obtained by subtracting CD1 from CD2 is referred to as a line width change amount ΔCD. The amount of change ΔCD in the line width due to local exposure changes according to the illuminance of the local exposure light.

  FIG. 14 is a diagram showing the relationship between the illuminance of light for local exposure and the amount of change in line width due to local exposure under the condition that the film thickness of the resist film according to one embodiment is constant. In FIG. 14, the solid line indicates data when pattern exposure, first development, local exposure, and second development are performed in this order, and the alternate long and short dash line indicates pattern exposure, local exposure, and second development without performing the first development. Shows the data when are performed in this order. With respect to the alternate long and short dash line, the amount of change in line width is obtained by comparing with data obtained when pattern exposure and second development are performed in this order without performing first development and local exposure.

  As shown in FIG. 14, the first development is performed after the pattern exposure and before the local exposure, so that the line width change amount ΔCD due to the local exposure is increased as compared with the case where the first development is not performed. can do. This is because a part of the resist film 5 is removed by the first development before the local exposure, and the light of the local exposure is not attenuated in the removed part, so that the local exposure light easily reaches the deep part of the resist film 5. It is. Therefore, when the film thickness of the resist film 5 is entirely or partially thick, a desired resist pattern can be obtained by local exposure and second development after local exposure.

  In the post-baking step S108, the post-baking apparatus 31 heat-treats the resist film on the substrate G with a heater or the like. The developer and the rinsing liquid remaining on the resist film on the substrate G are removed by evaporation, and the adhesion of the resist film to the substrate G is enhanced. Thereafter, the substrate G may be cooled to a predetermined temperature.

  After the post-baking step S108, the functional film 6 is etched using the resist pattern 9. Thereafter, the resist pattern 9 is removed.

<Summary>
As described above, according to the present embodiment, the pattern exposure of the resist film 5, the first development of the resist film 5, the local exposure of the resist film 5, and the second development of the resist film 5 are performed in this order. Do. Therefore, the first development of the resist film 5 is performed after the pattern exposure of the resist film 5 and before the local exposure of the resist film 5. Unlike the local exposure light, the pattern exposure light reaches the deep part of the resist film 5 with almost no attenuation at the resist film 5. For this reason, a part of the resist film 5 is removed by the first development before the local exposure, and the local exposure light is not attenuated in the removed part, so that the local exposure light easily reaches the deep part of the resist film 5. Therefore, when the film thickness of the resist film 5 is entirely or partially thick, a desired resist pattern can be obtained by local exposure and second development after local exposure.

  According to this embodiment, in the local exposure, the resist film 5 is locally exposed in order to correct the line width of the resist pattern 8 obtained by the first development performed before the local exposure. Thereby, when the film thickness of the resist film 5 is entirely or partially thick, the in-plane variation of the line width of the resist pattern 8 can be reduced.

  In the present embodiment, the line width (opening width) of the resist pattern 8 is corrected, but the hole diameter of the resist pattern 8 may be corrected. In-plane variation in the hole diameter of the resist pattern 8 can be reduced. Further, the remaining film thickness of the resist pattern 8 may be corrected. In-plane variation of the remaining film thickness of the resist pattern 8 can be reduced.

<Deformation and improvement>
While the embodiments of the substrate processing system and the substrate processing method have been described above, the present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the gist of the present invention described in the claims. Improvements are possible.

DESCRIPTION OF SYMBOLS 1 Substrate processing system 5 Resist film 6 Functional film 7 Mask pattern 8 Resist pattern 9 obtained by 1st image development process 9 Resist pattern 11 obtained by 2nd image development process Cleaning device 12 Coating device 13 Prebaking device 14 Exposure device 15 1st image development device 21 Local exposure device 25 Second developing device 31 Post-bake device 50 Control device

Claims (6)

An exposure apparatus for pattern exposure of a resist film formed on a substrate;
A first developing device for developing the resist film pattern-exposed by the exposure device to form a resist pattern;
A local exposure apparatus for locally exposing the resist film in order to correct the resist pattern obtained by the first developing device;
A substrate processing system comprising: a second developing device that develops the resist film exposed by the local exposure device.   The substrate processing system according to claim 1, wherein the local exposure apparatus locally exposes the resist film in order to correct a line width of the resist pattern obtained by the first developing device. An exposure process for pattern exposure of a resist film formed on a substrate;
A first development step of developing the resist film pattern-exposed in the exposure step to form a resist pattern;
A local exposure step of locally exposing the resist film to correct the resist pattern obtained in the first development step;
And a second development step of developing the resist film exposed in the local exposure step.   The substrate processing method according to claim 3, wherein in the local exposure step, the resist film is locally exposed in order to correct a line width of the resist pattern obtained in the first development step.   A program for causing a computer to execute the substrate processing method according to claim 3.   An information storage medium storing the program according to claim 5.

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