JP2018188611A5 - - Google Patents

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JP2018188611A5
JP2018188611A5 JP2017163515A JP2017163515A JP2018188611A5 JP 2018188611 A5 JP2018188611 A5 JP 2018188611A5 JP 2017163515 A JP2017163515 A JP 2017163515A JP 2017163515 A JP2017163515 A JP 2017163515A JP 2018188611 A5 JP2018188611 A5 JP 2018188611A5
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hollow structure
filler
molding material
gan
sic
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JP2017163515A
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JP2018188611A (en
JP6992967B2 (en
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Priority to TW107121348A priority Critical patent/TWI696655B/en
Priority to PCT/JP2018/023651 priority patent/WO2019044133A1/en
Priority to CN201880030381.4A priority patent/CN110603294B/en
Publication of JP2018188611A publication Critical patent/JP2018188611A/en
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Claims (10)

（Ａ）マレイミド樹脂、（Ｂ）硬化剤、（Ｃ）エポキシ樹脂、（Ｄ）硬化促進剤及び（Ｅ）充填材を含有し、
前記（Ｅ）充填材は（ｅ−１）中空構造充填材を含有するＳｉＣ素子又はＧａＮ素子封止用成形材料組成物。 Containing (A) maleimide resin, (B) curing agent , (C) epoxy resin, (D) curing accelerator and (E) filler,
The (E) filler is a molding material composition for encapsulating a SiC device or a GaN device, which contains (e-1) a hollow structure filler. 前記（Ａ）マレイミド樹脂が下記一般式（Ｉ）で表されるマレイミド樹脂であり、前記（Ｂ）硬化剤が下記一般式（ＩＩ）で表されるフェノール系硬化剤、及び下記一般式（ＩＩＩ）で表されるフェノール系硬化剤の１種又は２種であるフェノール系硬化剤、並びに下記一般式（ＩＶ）で表されるベンゾオキサジン樹脂から選ばれる少なくとも１種であり、前記（Ｃ）エポキシ樹脂が下記一般式（Ｖ）〜（ＶＩＩ）で表されるエポキシ樹脂から選ばれる少なくとも１種であることを特徴とする請求項１に記載のＳｉＣ素子又はＧａＮ素子封止用成形材料組成物。

（式中、Ｒ１はそれぞれ独立に炭素数１〜１０の炭化水素基であって、炭化水素基はハロゲン原子で置換されていてもよい。Ｒ１が複数存在する場合、該複数のＲ１は、互いに同一でも異なっていてもよい。ｐはそれぞれ独立に０〜４の整数、ｑは０〜３の整数、ｚは０〜１０の整数である。）

（式中、ｘは０〜１０である。）

（式中、ｙ１は０〜１０である。）

（式中、Ｘ１は炭素数１〜１０のアルキレン基、酸素原子、又は直接結合である。Ｒ２及びＲ３は、それぞれ独立に炭素数１〜１０の炭化水素基である。Ｒ２及びＲ３が複数存在する場合、複数のＲ２及び複数のＲ３は、それぞれ同一でも異なっていてもよい。ｍ１及びｍ２は、それぞれ独立に０〜４の整数である。）

（式中、ｎ１は０〜１０である。）

（式中、ｎ２は０〜１０である。）
 The (A) maleimide resin is a maleimide resin represented by the following general formula (I), the (B) curing agent is a phenolic curing agent represented by the following general formula (II), and the following general formula (III) ) A phenolic curing agent which is one or two of the phenolic curing agents represented by the formula (1 ) and at least one selected from the benzoxazine resins represented by the following general formula (IV) , and the (C) epoxy resin SiC element or GaN element for sealing molding composition according to claim 1, characterized in that at least one selected from epoxy resins represented by the following general formula (V) ~ (VII).

(Wherein, a hydrocarbon group having 1 to 10 carbon atoms R 1 each independently if hydrocarbon group which may .R 1 optionally substituted by halogen atoms there are a plurality, R 1 of said plurality of May be the same or different from each other. P is independently an integer of 0 to 4, q is an integer of 0 to 3, and z is an integer of 0 to 10.)

(In the formula, x is 0 to 10.)

(In the formula, y1 is 0 to 10.)

(In the formula, X1 is an alkylene group having 1 to 10 carbon atoms, an oxygen atom, or a direct bond. R 2 and R 3 are each independently a hydrocarbon group having 1 to 10 carbon atoms. R 2 and R When plural 3 are present, plural R 2 and plural R 3 may be the same or different, and m1 and m2 are each independently an integer of 0 to 4.)

(In the formula, n1 is 0 to 10.)

(In the formula, n2 is 0 to 10.)
前記（Ｄ）硬化促進剤が（Ｄ−１）有機リン系硬化促進剤、及び（Ｄ−２）イミダゾール系硬化促進剤であることを特徴とする請求項１又は２項に記載のＳｉＣ素子又はＧａＮ素子封止用成形材料組成物。 The curing accelerator (D) is (D-1) organic phosphorus-based curing accelerator, and (D-2) SiC device according to claim 1 or 2 wherein, characterized in that an imidazole-based curing accelerator, or A molding material composition for sealing a GaN element . 前記（ｅ−１）中空構造充填材の平均粒径が３〜１００μｍである請求項１〜３のいずれか一項に記載のＳｉＣ素子又はＧａＮ素子封止用成形材料組成物。 The molding material composition for encapsulating a SiC device or a GaN device according to claim 1, wherein the (e-1) hollow structure filler has an average particle diameter of 3 to 100 μm. 前記封止成形材料用組成物全量に対する前記（ｅ−１）中空構造充填材の割合を、該（ｅ−１）中空構造充填材の弾性率で除した値が０．００２〜０．２５０である請求項１〜４のいずれか一項に記載のＳｉＣ素子又はＧａＮ素子封止用成形材料組成物。 The value obtained by dividing the ratio of the (e-1) hollow structure filler to the total amount of the composition for sealing molding material by the elastic modulus of the (e-1) hollow structure filler is 0.002 to 0.250. The molding material composition for encapsulating a SiC device or a GaN device according to any one of claims 1 to 4 . 前記（ｅ−１）中空構造充填材が、シリカ、アルミナ、シリカ−アルミナ化合物からなる群より選ばれる少なくとも１種であり、該（ｅ−１）中空構造充填材の含有量が（Ｅ）充填材全量に対し１〜５０質量％である請求項１〜５のいずれか一項に記載のＳｉＣ素子又はＧａＮ素子封止用成形材料組成物。 The hollow structure filler (e-1) is at least one selected from the group consisting of silica, alumina and silica-alumina compounds, and the content of the hollow structure filler (e-1) is (E) filling. The molding material composition for encapsulating a SiC element or a GaN element according to any one of claims 1 to 5, which is 1 to 50 mass% with respect to the total amount of the material. 前記（ｅ−１）中空構造充填材が、有機化合物からなり、該（ｅ−１）中空構造充填材の含有量が（Ｅ）充填材全量に対し０．５〜１０質量％である請求項１〜５のいずれか一項に記載のＳｉＣ素子又はＧａＮ素子封止用成形材料組成物。 The hollow structure filler (e-1) is made of an organic compound, and the content of the hollow structure filler (e-1) is 0.5 to 10 mass% with respect to the total amount of the filler (E). The molding material composition for encapsulating a SiC device or a GaN device according to any one of 1 to 5 . 前記（ｅ−１）中空構造充填材が、シルセスキオキサン化合物からなり、該（ｅ−１）中空構造充填材の含有量が（Ｅ）充填材全量に対し０．５〜１０質量％である請求項１〜５のいずれか一項に記載のＳｉＣ素子又はＧａＮ素子封止用成形材料組成物。 The hollow structure filler (e-1) is composed of a silsesquioxane compound, and the content of the hollow structure filler (e-1) is 0.5 to 10% by mass with respect to the total amount of the filler (E). The molding material composition for encapsulating a SiC device or a GaN device according to any one of claims 1 to 5 . 前記（Ｄ−２）成分が、ビスフェノールＡ型エポキシ樹脂（液状）と、その質量比を１／２０とした上で反応させた時の反応開始温度が、８５℃以上１７５℃未満を示すイミダゾール系硬化促進剤である請求項３に記載のＳｉＣ素子又はＧａＮ素子封止用成形材料組成物。 The component (D-2) is an imidazole-based epoxy resin having a bisphenol A type epoxy resin (liquid) and a reaction start temperature of 85 ° C. or higher and lower than 175 ° C. when reacted at a mass ratio of 1/20 The molding material composition for encapsulating a SiC device or GaN device according to claim 3 , which is a curing accelerator. 請求項１〜９のいずれか一項に記載のＳｉＣ素子又はＧａＮ素子封止用成形材料組成物の硬化物により封止された素子を備える電子部品装置。 Electronic component device comprising a sealed device with a cured product of the SiC element or GaN element for sealing molding composition according to any one of claims 1-9.
JP2017163515A 2017-04-28 2017-08-28 Compositions for encapsulation molding materials and electronic component equipment Active JP6992967B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW107121348A TWI696655B (en) 2017-08-28 2018-06-21 Molding material composition for sealing SiC and GaN elements, electronic parts device
PCT/JP2018/023651 WO2019044133A1 (en) 2017-08-28 2018-06-21 MOLDING COMPOSITION FOR SiC AND GaN ELEMENT SEALING, AND ELECTRONIC COMPONENT DEVICE
CN201880030381.4A CN110603294B (en) 2017-08-28 2018-06-21 Molding material composition for sealing SiC and GaN elements, and electronic component device

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JP2017089980 2017-04-28
JP2017089980 2017-04-28

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JP2018188611A5 true JP2018188611A5 (en) 2020-05-21
JP6992967B2 JP6992967B2 (en) 2022-01-13

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PT3702390T (en) 2017-10-27 2024-02-05 Eneos Corp Composition for cured resin, cured product of said composition, production method for said composition and said cured product, and semiconductor device
US20220106437A1 (en) * 2018-12-10 2022-04-07 Eneos Corporation Composition for curable resin, cured product of said composition, production method for said composition and said cured product, and semiconductor device
CN111621152A (en) * 2019-02-28 2020-09-04 京瓷株式会社 Molding material composition for sealing element and electronic component device

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JP6126837B2 (en) 2012-12-21 2017-05-10 株式会社日本触媒 Liquid curable resin composition and use thereof
JP6185342B2 (en) 2013-09-05 2017-08-23 信越化学工業株式会社 Encapsulant laminated composite, post-sealing semiconductor element mounting substrate or post-sealing semiconductor element forming wafer, and method for manufacturing semiconductor device

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