JP2018174185A5 - - Google Patents

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JP2018174185A5
JP2018174185A5 JP2017070173A JP2017070173A JP2018174185A5 JP 2018174185 A5 JP2018174185 A5 JP 2018174185A5 JP 2017070173 A JP2017070173 A JP 2017070173A JP 2017070173 A JP2017070173 A JP 2017070173A JP 2018174185 A5 JP2018174185 A5 JP 2018174185A5
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semiconductor
oxide film
film
emitting device
light emitting
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JP2017070173A
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JP6841708B2 (en
JP2018174185A (en
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Priority to JP2017070173A priority Critical patent/JP6841708B2/en
Priority claimed from JP2017070173A external-priority patent/JP6841708B2/en
Priority to KR1020170061845A priority patent/KR101939334B1/en
Priority to CN201880011132.0A priority patent/CN110506340A/en
Priority to PCT/KR2018/001682 priority patent/WO2018182169A1/en
Publication of JP2018174185A publication Critical patent/JP2018174185A/en
Publication of JP2018174185A5 publication Critical patent/JP2018174185A5/ja
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Claims (20)

第１導電型の第１半導体、前記第１半導体の上方に設けられ前記第１導電型とは異なる第２導電型の第２半導体、および前記第１半導体と前記第２半導体との間の活性層を含む半導体構造体と、
前記第１半導体に接続された第１電極と、
前記第２半導体の上方で、前記第２半導体に接続された第２電極と、
前記第２半導体と前記第２電極との間に設けられ、前記第２半導体と前記第２電極とを電気的に接続する導電経路が設けられた透光性を有する第１膜と、
を有する発光素子。 A first semiconductor of a first conductivity type, a second semiconductor of a second conductivity type provided above the first semiconductor and different from the first conductivity type, and an activity between the first semiconductor and the second semiconductor; A semiconductor structure including a layer;
A first electrode connected to the first semiconductor;
A second electrode connected to the second semiconductor above the second semiconductor;
A light-transmitting first film provided between the second semiconductor and the second electrode and provided with a conductive path that electrically connects the second semiconductor and the second electrode;
A light-emitting element having: 前記第１膜は、前記第２半導体の成分を有する膜である請求項１に記載の発光素子。   The light emitting device according to claim 1, wherein the first film is a film having a component of the second semiconductor. 前記第１膜は、酸化膜である請求項１に記載の発光素子。   The light emitting device according to claim 1, wherein the first film is an oxide film. 前記酸化膜は前記第２半導体よりも高抵抗であり、
前記導電経路は、前記酸化膜の内部に設けられている請求項３に記載の発光素子。 The oxide film has a higher resistance than the second semiconductor,
The light emitting device according to claim 3, wherein the conductive path is provided inside the oxide film. 平面視において、前記第２電極は前記酸化膜に囲まれている請求項４に記載の発光素子。   The light emitting device according to claim 4, wherein the second electrode is surrounded by the oxide film in a plan view. 前記酸化膜は、第１酸化膜および第２酸化膜を含み、
前記第２酸化膜の膜厚は、前記第１酸化膜の膜厚より大きく、
前記導電経路は、少なくとも前記第２酸化膜に設けられている請求項４に記載の発光素子。 The oxide film includes a first oxide film and a second oxide film,
A thickness of the second oxide film is larger than a thickness of the first oxide film;
The light emitting device according to claim 4, wherein the conductive path is provided at least in the second oxide film. 平面視において、前記第２酸化膜は前記第１酸化膜に囲まれている請求項６に記載の発光素子。   The light emitting device according to claim 6, wherein the second oxide film is surrounded by the first oxide film in a plan view. 前記酸化膜には、前記第１酸化膜と前記第２酸化膜との間に溝が設けられている請求項７に記載の発光素子。   The light emitting device according to claim 7, wherein a groove is provided in the oxide film between the first oxide film and the second oxide film. 前記溝は、前記第２酸化膜の周縁に沿って連続して前記第２酸化膜を囲んでいる請求項８に記載の発光素子。   The light emitting device according to claim 8, wherein the groove continuously surrounds the second oxide film along a periphery of the second oxide film. 前記酸化膜の屈折率は、前記第２半導体の屈折率と空気の屈折率との間の値である請求項４に記載の発光素子。   The light emitting device according to claim 4, wherein a refractive index of the oxide film is a value between a refractive index of the second semiconductor and a refractive index of air. 第１導電型の第１半導体、前記第１導電型とは異なる第２導電型かつ前記第１半導体の上方の第２半導体、および前記第１半導体と前記第２半導体との間の活性層を含む半導体構造体において、前記第２半導体の第１領域を露出するマスクを形成し、
前記第１領域の前記第２半導体を酸化して第１酸化膜を形成し、
前記マスクに覆われた第２領域の前記第２半導体の上に透光性を有する第１膜を形成し、
前記マスクを除去し、
前記第２領域の前記第２半導体の上方に、前記第２半導体に電気的に接続される第２電極を形成し、
前記第１半導体に電気的に接続される第１電極を形成する発光素子の製造方法。 A first semiconductor of a first conductivity type, a second semiconductor of a second conductivity type different from the first conductivity type and above the first semiconductor, and an active layer between the first semiconductor and the second semiconductor. Forming a mask exposing a first region of the second semiconductor in the semiconductor structure including:
Oxidizing the second semiconductor in the first region to form a first oxide film;
Forming a first film having a light-transmitting property on the second semiconductor in a second region covered with the mask;
Removing the mask,
Forming a second electrode electrically connected to the second semiconductor above the second semiconductor in the second region;
A method for manufacturing a light emitting device, wherein a first electrode electrically connected to the first semiconductor is formed. 前記第１膜は、前記第２半導体の一部が化学反応することで形成される請求項１１に記載の発光素子の製造方法。   The method of claim 11, wherein the first film is formed by a chemical reaction of a part of the second semiconductor. 前記第１膜は、前記第２半導体の一部が酸化することで形成される請求項１１に記載の発光素子の製造方法。   The method according to claim 11, wherein the first film is formed by oxidizing a part of the second semiconductor. 前記第１酸化膜および前記第１膜は、それぞれ同一工程で形成される請求項１３に記載の発光素子の製造方法。 14. The method according to claim 13, wherein the first oxide film and the first film are formed in the same process. 前記マスクの膜厚方向の電気抵抗は、前記第１酸化膜の膜厚方向の電気抵抗よりも小さい請求項１４に記載の発光素子の製造方法。   The method according to claim 14, wherein an electrical resistance of the mask in a thickness direction is smaller than an electrical resistance of the first oxide film in a thickness direction. 前記第１膜は、前記マスクが前記第２半導体を覆った状態で形成される請求項１５に記載の発光素子の製造方法。 The method of claim 15, wherein the first film is formed with the mask covering the second semiconductor. 前記第１膜は導電経路を含み、
前記導電経路を介して前記第２電極と前記第２半導体とが接続される請求項１６に記載の発光素子の製造方法。 The first film includes a conductive path,
The method according to claim 16, wherein the second electrode and the second semiconductor are connected via the conductive path. 前記マスクには、前記マスクのパターンの周縁に沿って突出部が設けられている請求項１３に記載の発光素子の製造方法。   14. The method according to claim 13, wherein the mask is provided with a protruding portion along a peripheral edge of the pattern of the mask. 前記突出部は、前記マスクの熱処理によって形成される請求項１８に記載の発光素子の製造方法。   The method according to claim 18, wherein the protrusion is formed by heat-treating the mask. 前記マスクはレジストであり、
前記熱処理は、１６０℃以上の熱処理である請求項１９に記載の発光素子の製造方法。

The mask is a resist,
The method according to claim 19, wherein the heat treatment is a heat treatment at 160 ° C. or higher.

JP2017070173A 2017-03-31 2017-03-31 Light emitting element and manufacturing method of light emitting element Active JP6841708B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017070173A JP6841708B2 (en) 2017-03-31 2017-03-31 Light emitting element and manufacturing method of light emitting element
KR1020170061845A KR101939334B1 (en) 2017-03-31 2017-05-18 A light emitting device and a method of manufacturing the light emitting device
CN201880011132.0A CN110506340A (en) 2017-03-31 2018-02-08 The manufacturing method of light-emitting component and light-emitting component
PCT/KR2018/001682 WO2018182169A1 (en) 2017-03-31 2018-02-08 Light-emitting diode and method for producing light-emitting diode

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JP2018174185A5 true JP2018174185A5 (en) 2019-12-19
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WO (1) WO2018182169A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7206629B2 (en) * 2018-04-27 2023-01-18 セイコーエプソン株式会社 Light-emitting device and projector
JP6803595B1 (en) * 2020-09-16 2020-12-23 アルディーテック株式会社 Semiconductor light emitting device chip integration device and its manufacturing method

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51120688A (en) * 1975-04-16 1976-10-22 Oki Electric Ind Co Ltd Manufacturing method for semiconductor apparatus
JPH06314823A (en) * 1993-04-28 1994-11-08 Toyoda Gosei Co Ltd Gallium nitride compound semiconductor light emitting element and its manufacture
JP3711055B2 (en) * 2001-09-25 2005-10-26 三洋電機株式会社 Method for forming nitride semiconductor device
JP2005005557A (en) * 2003-06-13 2005-01-06 Hitachi Cable Ltd Manufacturing method of semiconductor light emitting device
KR100576849B1 (en) * 2003-09-19 2006-05-10 삼성전기주식회사 Light emitting device and method for manufacturing the same
US7615798B2 (en) * 2004-03-29 2009-11-10 Nichia Corporation Semiconductor light emitting device having an electrode made of a conductive oxide
JP4977957B2 (en) * 2004-03-29 2012-07-18 日亜化学工業株式会社 Semiconductor light emitting device
KR100631840B1 (en) * 2004-06-03 2006-10-09 삼성전기주식회사 Nitride semiconductor light emitting device for flip chip
JP4254720B2 (en) * 2005-02-04 2009-04-15 セイコーエプソン株式会社 Substrate before insulation treatment and substrate manufacturing method
JP5047516B2 (en) * 2006-03-23 2012-10-10 昭和電工株式会社 Method for manufacturing gallium nitride compound semiconductor light emitting device, gallium nitride compound semiconductor light emitting device, and lamp using the same
KR100886819B1 (en) * 2006-08-23 2009-03-04 한국광기술원 Reflector Electrode, Compound Semiconductor Light Emitting Device Including The Reflector Electrode And Method Of Manufacturing The Same
TWI416766B (en) * 2009-01-13 2013-11-21 Light-emitting diode with high light-emitting efficiency
JP2011009502A (en) * 2009-06-26 2011-01-13 Showa Denko Kk Light emitting element and method of manufacturing the same, lamp, electronic apparatus, and mechanical apparatus
JP5543164B2 (en) * 2009-09-25 2014-07-09 豊田合成株式会社 Light emitting element
KR100999798B1 (en) * 2010-02-11 2010-12-08 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
KR101728545B1 (en) * 2010-04-23 2017-04-19 엘지이노텍 주식회사 Light emitting device, method for fabricating the light emitting device and light emitting device package
KR20120081801A (en) * 2011-01-12 2012-07-20 삼성엘이디 주식회사 Semiconductor light emitting device
KR101791175B1 (en) * 2011-06-30 2017-10-27 엘지이노텍 주식회사 Light emitting device and light emitting device package including the same
KR101907619B1 (en) * 2012-03-15 2018-10-15 엘지이노텍 주식회사 Light emitting device
KR102053279B1 (en) * 2013-04-11 2019-12-06 엘지이노텍 주식회사 Light emitting device, light emitting device package, and light unit
JP2015015321A (en) 2013-07-03 2015-01-22 高槻電器工業株式会社 Semiconductor light-emitting element and method of manufacturing the same

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