JP2018166204A5 - - Google Patents
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- JP2018166204A5 JP2018166204A5 JP2018005160A JP2018005160A JP2018166204A5 JP 2018166204 A5 JP2018166204 A5 JP 2018166204A5 JP 2018005160 A JP2018005160 A JP 2018005160A JP 2018005160 A JP2018005160 A JP 2018005160A JP 2018166204 A5 JP2018166204 A5 JP 2018166204A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- temperature
- film forming
- reflected light
- light intensity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims 26
- 239000010408 film Substances 0.000 claims 20
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 238000005755 formation reaction Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 230000003287 optical Effects 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
Claims (8)
前記基板上にガスを供給するガス供給部と、
前記基板を加熱するヒータと、
前記成膜室に設けられた窓と、
前記窓を介して前記基板の温度を測定する放射温度計と、
前記基板の温度と相関のあるパラメータを取得するパラメータ取得部と、
放射率が温度または前記基板上に成膜された薄膜による光学的な干渉効果により変動することを考慮して、前記パラメータの初期値からの変動に基づいて前記基板の温度を補正する補正部と、
前記基板の温度、または補正された前記基板の温度に基づいて前記ヒータを制御する制御部と、
を備える成膜装置。 A film formation chamber that accommodates substrates and performs film formation processing for each substrate,
A gas supply unit that supplies gas on the substrate and
A heater that heats the substrate and
The window provided in the film forming chamber and
A radiation thermometer that measures the temperature of the substrate through the window,
A parameter acquisition unit that acquires parameters that correlate with the temperature of the substrate, and
With a correction unit that corrects the temperature of the substrate based on the fluctuation from the initial value of the parameter , considering that the emissivity fluctuates due to the temperature or the optical interference effect of the thin film formed on the substrate. ,
A control unit that controls the heater based on the temperature of the substrate or the corrected temperature of the substrate.
A film forming apparatus provided with.
前記補正部は、実質的に前記環境温度を同じにして測定される前記第１反射光強度と、前記第２反射光強度と、に基づいて前記基板の温度を補正する、請求項２に記載の成膜装置。 Further equipped with an environmental thermometer for measuring the environmental temperature of the film forming chamber,
Wherein the correction unit corrects substantially the first reflected light intensity the measured ambient temperature in the same, and the second reflected light intensity, the temperature of the substrate based on, according to claim 2 Film deposition equipment.
前記成膜室に設けられた窓を介して前記基板の温度を測定し、
前記基板の温度と相関のあるパラメータを取得し、
放射率が温度または前記基板上に成膜された薄膜による光学的な干渉効果により変動することを考慮して、前記パラメータの初期値からの変動に基づいて前記基板の温度を補正し、
補正された前記基板の温度が所定の温度となるように前記ヒータを制御する、
成膜方法。 A film forming method in which a substrate housed in a film forming chamber is heated to a predetermined temperature by a heater and gas is supplied onto the substrate.
The temperature of the substrate is measured through a window provided in the film forming chamber, and the temperature of the substrate is measured.
Obtain the parameters that correlate with the temperature of the substrate,
Taking into account that the emissivity fluctuates due to the temperature or the optical interference effect of the thin film formed on the substrate, the temperature of the substrate is corrected based on the fluctuation from the initial value of the parameter.
The heater is controlled so that the corrected temperature of the substrate becomes a predetermined temperature.
Film formation method.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107107295A TWI729274B (en) | 2017-03-28 | 2018-03-05 | Film forming device and film forming method |
| US15/937,275 US20180286719A1 (en) | 2017-03-28 | 2018-03-27 | Film forming apparatus and film forming method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017063076 | 2017-03-28 | ||
| JP2017063076 | 2017-03-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018166204A JP2018166204A (en) | 2018-10-25 |
| JP2018166204A5 true JP2018166204A5 (en) | 2021-01-14 |
| JP7037372B2 JP7037372B2 (en) | 2022-03-16 |
Family
ID=63922981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018005160A Active JP7037372B2 (en) | 2017-03-28 | 2018-01-16 | Film forming equipment and film forming method |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7037372B2 (en) |
| TW (1) | TWI729274B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210075482A (en) | 2019-12-13 | 2021-06-23 | 삼성전자주식회사 | Process Apparatus Having a Non-Contact Thermo-Sensor |
| DE102020126597A1 (en) * | 2020-10-09 | 2022-04-14 | Aixtron Se | Method for emissivity-corrected pyrometry |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003106902A (en) * | 2001-09-27 | 2003-04-09 | Toshiba Corp | Non-contact temperature measuring method and apparatus therefor |
| JP6279396B2 (en) * | 2014-05-12 | 2018-02-14 | 株式会社ニューフレアテクノロジー | Vapor phase growth method and vapor phase growth apparatus |
| JP6479525B2 (en) * | 2015-03-27 | 2019-03-06 | 株式会社ニューフレアテクノロジー | Film forming apparatus and temperature measuring method |
| JP6430337B2 (en) * | 2015-07-06 | 2018-11-28 | 株式会社ニューフレアテクノロジー | Vapor phase growth method and vapor phase growth apparatus |
-
2018
- 2018-01-16 JP JP2018005160A patent/JP7037372B2/en active Active
- 2018-03-05 TW TW107107295A patent/TWI729274B/en active
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