JP2018160509A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus for removing a foreign matter adhering to the entire upper surface of a substrate.SOLUTION: A substrate processing apparatus includes a plurality of chucks 11 each having a clamp 40 movable between a first position for holding the peripheral portion of a substrate W and a second position separated from the substrate W, a substrate rotating mechanism 10 for rotating the substrate W held by the plurality of chucks 11, a scrubber 50 for scrubbing the upper surface of the substrate W held by the plurality of chucks 11, and a cam 201 disposed close to the scrubber 50. Each of the plurality of chucks 11 includes a cam follower 205 which is connected to a clamp 40 and moves the clamp 40 from the first position to the second position by contact with the cam 201.SELECTED DRAWING: Figure 15

Description

  The present invention relates to an apparatus and method for processing a substrate such as a wafer.

  In recent years, devices such as memory circuits, logic circuits, and image sensors (for example, CMOS sensors) are becoming more highly integrated. In the process of forming these devices, foreign substances such as fine particles and dust may adhere to the devices. Foreign matter adhering to the device may cause a short circuit between wirings or a circuit failure. Therefore, in order to improve the reliability of the device, it is necessary to clean the wafer on which the device is formed and to remove foreign matters on the wafer.

  Foreign substances such as fine particles and dust may adhere to the back surface (bare silicon surface) of the wafer. If such foreign matter adheres to the back surface of the wafer, the wafer may be separated from the stage reference surface of the exposure apparatus, or the wafer surface may be inclined with respect to the stage reference surface, resulting in patterning deviation or focal distance deviation. Become. In order to prevent such a problem, it is necessary to remove foreign substances adhering to the upper surface (front surface or back surface) of the wafer.

JP 2013-172019 A JP 2014-150178 A

  However, in a conventional method, for example, a method using one scrub treatment process, it may be difficult to remove foreign substances from the entire upper surface (front surface or back surface) of the wafer. Therefore, an object of the present invention is to provide an apparatus and a method that can remove foreign matter even when foreign matter adheres to the entire upper surface of a substrate such as a wafer.

  In one aspect, a plurality of chucks each having a clamp that is movable between a first position that holds a peripheral edge of the substrate and a second position that is spaced apart from the substrate, and the substrate held by the plurality of chucks A substrate rotation mechanism for rotating the substrate, a scrubber for scrubbing the upper surface of the substrate held by the plurality of chucks, and a cam disposed in proximity to the scrubber, each of the plurality of chucks Is a substrate processing apparatus comprising a cam follower connected to the clamp and moving the clamp from the first position to the second position by contact with the cam.

In a preferred aspect, a clamp urging mechanism for urging the clamp in the direction from the second position to the first position is further provided.
In a preferred embodiment, each of the plurality of chucks has a support column rotatable about its own axis, and the clamp is provided on the support column and is located away from the axis of the support column. The cam follower is connected to the clamp via the support column.
In a preferred aspect, the cam follower has a cam contact surface that can rotate integrally with the support column about the axis of the support column and is located away from the axis of the support column. To do.
In a preferred aspect, the cam contact surface is a flat surface.
In a preferred aspect, the cam is located below the scrubber.
In a preferred embodiment, the scrubber has a cleaning tape having no abrasive grains, a polishing tape having abrasive grains, a pad member impregnated with a polishing liquid containing abrasive grains, an elastic member having abrasive grains attached or fixed to the surface, or It is characterized by comprising a scrub member made of any one of grinders having a grindstone, or a combination selected from any of these.

In a preferred embodiment, the scrubber has a scrub member comprising a cleaning tape having no abrasive grains or a polishing tape having abrasive grains, and a plurality of urging mechanisms for urging the cleaning tape or the polishing tape toward the substrate. It is characterized by having.
In a preferred aspect, the first scrubber moving mechanism further includes a swing arm to which the scrubber is connected, a swing shaft to which the swing arm is fixed, and a shaft rotation mechanism to which the swing shaft is connected. And the first scrubber moving mechanism swings the scrubber in a horizontal direction with respect to the upper surface of the substrate.
A preferable aspect further includes a second scrubber moving mechanism including a fixed base disposed outside the substrate rotating mechanism and a lifter connected to the fixed base, and the second scrubber moving mechanism includes the scrubber. Is moved in the horizontal direction with respect to the upper surface of the substrate.

  In another aspect, the peripheral portion of the substrate is held by a plurality of chucks each having a clamp that is movable between a first position that holds the peripheral portion of the substrate and a second position that is separated from the substrate. The chuck was rotated together with the substrate, the upper surface of the substrate was scrubbed with a scrubber, and the clamp was moved to approach the scrubber as the plurality of chucks were rotated. In the substrate processing method, the cam follower is brought into contact with the cam to move the clamp from the first position to the second position.

According to a preferred aspect, when the clamp moves in a direction away from the scrubber as the plurality of chucks rotate, the cam follower is separated from the cam to move the clamp from the second position to the first position. It is made to move to.
In a preferred aspect, the cam is located below the scrubber.

  When the cam follower comes into contact with the cam, the clamp moves from the first position holding the peripheral edge of the substrate to the second position separated from the substrate, so that the scrubber does not contact the clamp and the entire upper surface including the top edge portion of the substrate. Can be scrubbed. Therefore, the scrubber can reliably remove foreign substances adhering to the entire front surface and / or back surface of the substrate.

FIG. 1A and FIG. 1B are enlarged cross-sectional views showing a peripheral portion of a wafer which is an example of a substrate. It is a side view which shows one Embodiment of a substrate processing apparatus. It is sectional drawing which shows the detailed structure of a board | substrate rotation mechanism. It is a figure which shows the state which has a wafer in a raise position. It is a figure which shows the internal structure of a scrubber and a rocking | fluctuating arm. It is the figure which looked at the scrubber from the lower part. It is sectional drawing which shows the tape cartridge with which the scrubber was equipped. It is a figure which shows other embodiment of a tape cartridge. It is a figure which shows the tape cartridge of the state which contracted the biasing mechanism. FIG. 10A is a plan view showing a clamp of the chuck, and FIG. 10B is a side view of the clamp. FIG. 11A is a plan view showing a state where the clamp holds the wafer, and FIG. 11B is a plan view showing a state where the clamp is separated from the wafer. 12A is a cross-sectional view of the chuck, and FIG. 12B is a cross-sectional view taken along line AA in FIG. 12A. It is a schematic diagram for demonstrating arrangement | positioning of a 2nd magnet and a 3rd magnet. 14A is a cross-sectional view when the chuck is lifted by the lift mechanism, and FIG. 14B is a cross-sectional view taken along the line BB in FIG. 14A. It is a perspective view of a clamp movement mechanism. It is a top view which shows a static pressure support mechanism and a clamp movement mechanism. It is a top view which shows a scrubber and a clamp moving mechanism. It is a figure which shows a mode that a clamp moves between the 1st position and the 2nd position. It is a figure which shows a mode that a clamp moves between the 1st position and the 2nd position. It is a figure which shows a mode that a clamp moves between the 1st position and the 2nd position. It is a figure which shows a mode that a clamp moves between the 1st position and the 2nd position. It is a figure which shows a mode that a clamp moves between the 1st position and the 2nd position. It is a figure which shows a mode that a clamp moves between the 1st position and the 2nd position. It is a top view of a scrubber and a cam. It is a side view of a scrubber and a cam. It is a figure which shows other embodiment of a substrate processing apparatus. It is a figure which shows other embodiment of a substrate processing apparatus. It is a figure which shows other embodiment of a substrate processing apparatus. It is a top view showing typically one embodiment of a substrate processing system provided with the substrate processing device mentioned above. It is a figure which shows other embodiment of a substrate processing system.

  Hereinafter, embodiments of a substrate processing apparatus according to the present invention will be described with reference to the drawings. 1 to 30, the same or corresponding components are denoted by the same reference numerals, and redundant description is omitted.

  FIG. 1A and FIG. 1B are enlarged cross-sectional views showing a peripheral portion of a wafer which is an example of a substrate. More specifically, FIG. 1A is a cross-sectional view of a so-called straight type wafer, and FIG. 1B is a cross-sectional view of a so-called round type wafer. In the wafer W of FIG. 1A, the bevel portion is formed of an upper inclined portion (upper bevel portion) P, a lower inclined portion (lower bevel portion) Q, and a side portion (apex) R. This is the outermost peripheral surface (indicated by reference sign B).

  In the wafer W of FIG. 1B, the bevel portion is a portion (indicated by reference numeral B) having a curved cross section that constitutes the outermost peripheral surface of the wafer W. The top edge portion is an annular flat portion E1 which is a region located radially inward of the bevel portion B and located on the outermost side of the upper surface of the wafer W. The top edge portion E1 constitutes a part of the upper surface of the wafer W. The bottom edge portion is an annular flat portion E2 located on the opposite side of the top edge portion E1 and located radially inward of the bevel portion B. The bottom edge portion E2 is a region located on the outermost side of the lower surface of the wafer W and constitutes a part of the lower surface of the wafer W. The top edge portion E1 and the bottom edge portion E2 may be collectively referred to as an edge portion.

  In this specification, a peripheral portion of a substrate (also referred to as a wafer, which is indicated by a symbol W) includes a bevel portion B positioned on the outermost periphery of the substrate, a top edge portion E1 positioned on the radially inner side of the bevel portion, and An area including the bottom edge portion E2 is defined.

  FIG. 2 is a side view showing an embodiment of the substrate processing apparatus. As shown in FIG. 2, the substrate processing apparatus rotates a plurality of chucks 11 that hold the peripheral edge portion of a wafer W, which is an example of a substrate, and the wafers W held by the plurality of chucks 11 about its axis. A hollow substrate rotating mechanism 10, a scrubber (processing head) 50 that scrubs the upper surface of the wafer W held by the plurality of chucks 11, and a static pressure support mechanism 90 that supports the lower surface of the wafer W in a non-contact manner by fluid pressure. And.

  The scrubber 50 is disposed above the wafer W held by the substrate rotation mechanism 10, and the static pressure support mechanism 90 is disposed below the wafer W held by the substrate rotation mechanism 10. The scrubber 50 scrubs the upper surface of the wafer W held by the substrate rotation mechanism 10 to remove foreign matters and scratches from the upper surface of the wafer W.

  The static pressure support mechanism 90 is disposed in the inner space of the substrate rotation mechanism 10. These substrate rotation mechanism 10, scrubber 50, and static pressure support mechanism 90 are surrounded by the partition wall 6. The internal space of the partition wall 6 constitutes a processing chamber 7. A clean air intake 6 a is formed in the upper part of the partition wall 6, and an exhaust duct 9 is formed in the lower part of the partition wall 6.

  The exhaust mechanism 8 is installed on the upper surface of the partition wall 6. The exhaust mechanism 8 includes a fan 8A and a filter 8B that removes particles and dust in the air sent from the fan 8A. The exhaust mechanism 8 sends clean air into the processing chamber 7 through the clean air intake 6 a and forms a downward flow of clean air in the processing chamber 7. Air in the processing chamber 7 is exhausted from the exhaust duct 9.

  The substrate rotation mechanism 10 includes a hollow motor 12 that rotates the wafer W via a plurality of chucks 11. The substrate rotation mechanism 10 has a cylindrical shape as a whole, and a space is formed at the center thereof. If there is no large space on the lower surface of the wafer W, negative pressure may be generated below the wafer W when the wafer W is rotated at high speed. The negative pressure attracts dust floating in the air, and the dust may adhere to the lower surface of the wafer W. In this embodiment, since the hollow motor 12 is employed, the substrate rotation mechanism 10 having a cylindrical shape can be configured. Therefore, a large space can be formed below the wafer W, and the occurrence of the above problems can be prevented. Furthermore, the static pressure support mechanism 90 described above can be disposed in the space inside the substrate rotation mechanism 10.

  FIG. 3 is a cross-sectional view showing a detailed structure of the substrate rotation mechanism 10. As shown in FIG. 3, the hollow motor 12 has a shape in which a space is formed at the center thereof. The hollow motor 12 includes a cylindrical rotor 12A and a stator 12B arranged so as to surround the rotor 12A. The inner peripheral surface of the rotor 12A has a diameter larger than the diameter of the wafer W. By adopting such a hollow motor 12, the substrate rotation mechanism 10 can have a cylindrical shape with a large space formed inside thereof. A plurality of permanent magnets 12a are embedded in the rotor 12A.

  The hollow motor 12 is a sensorless IPM motor (Interior Permanent Magnet Motor) and does not require an optical position sensor. Therefore, the hollow motor 12 can be manufactured at a low cost, and even if a liquid enters the hollow motor 12, a malfunction due to a failure of the position sensor hardly occurs.

  The stator 12B is fixed to a cylindrical stationary member 14. A cylindrical rotary base 16 is disposed inside the stationary member 14 in the radial direction. Angular contact ball bearings 20, 20 are disposed between the stationary member 14 and the rotating base 16, and the rotating base 16 is rotatably supported by a combination of the two angular contact ball bearings 20, 20. Yes. The angular contact ball bearings 20 and 20 are bearings that can receive both a radial load and an axial load. Note that other types of bearings may be used as long as they can receive both a radial load and an axial load. The stator 12 </ b> B of the hollow motor 12 is fixed to the stationary member 14. The rotor 12A of the hollow motor 12 is fixed to the rotary base 16, and the rotor 12A and the rotary base 16 rotate together.

  On the upper part of the rotation base 16, the above-described chuck 11 is arranged to be movable up and down. More specifically, an annular projecting portion 16a projecting radially inward is formed on the upper portion of the rotating base 16, and the chucks 11 are inserted into the through holes formed in the projecting portion 16a. Yes. A spring 18 is disposed so as to surround the lower portion of each chuck 11. The upper end of the spring 18 presses the protrusion 16 a from below, and the lower end of the spring 18 is in contact with a spring stopper 11 a fixed to the chuck 11. . Each spring 11 is biased downward by the spring 18. The chuck 11 is rotated integrally with the rotary base 16 by a hollow motor 12.

  An annular rotary cover 25 is disposed outside the chuck 11 so as to surround the wafer W held by the chuck 11. The rotary cover 25 is fixed to the upper surface of the rotary base 16 so that the wafer W and the rotary cover 25 rotate together. The rotating cover 25 is disposed so as to surround the entire circumference of the wafer W. The inner diameter of the upper end of the rotary cover 25 is slightly larger than the diameter of the wafer W. A cutout 25 a having a shape along the outer peripheral surface of the chuck 11 is formed at a position corresponding to each chuck 11 at the upper end of the rotary cover 25.

  As shown in FIG. 3, the longitudinal cross-sectional shape of the inner peripheral surface of the rotation cover 25 is inclined radially inward. Further, the longitudinal section of the inner peripheral surface of the rotary cover 25 is constituted by a smooth curve. The upper end of the rotary cover 25 is close to the wafer W, and a liquid discharge hole 25b extending obliquely is formed in the lower part of the rotary cover 25.

  As shown in FIG. 2, a liquid supply nozzle 27 that supplies a processing liquid (cleaning liquid or polishing liquid) to the upper surface of the wafer W is disposed above the wafer W. The liquid supply nozzle 27 is connected to a liquid supply source (not shown) so that the processing liquid is supplied to the upper surface of the wafer W through the liquid supply nozzle 27. The processing liquid supplied to the wafer W is shaken off by the centrifugal force from the rotating wafer W, further captured by the inner peripheral surface of the rotating cover 25, and flows into the liquid discharge hole 25b. Although not shown, the liquid supply nozzle 27 may be attached to the scrubber 50 so that the liquid supply port faces the upper surface of the wafer W, that is, the processing liquid is supplied to the upper surface of the wafer W. .

  A lift mechanism 30 that raises the chuck 11 is provided below the chuck 11. The lift mechanism 30 includes a ring stage 31 disposed below the chuck 11, a plurality of rods 32 that support the ring stage 31, and an air cylinder 33 as an actuator that raises the rods 32. The lift mechanism 30 is separated from the rotary base 16, and the lift mechanism 30 does not rotate.

  FIG. 4 is a view showing a state where the wafer W and the chuck 11 are in the raised position. As shown in FIG. 4, the air cylinder 33 raises the ring stage 31 through the plurality of rods 32. As the ring stage 31 moves upward, all the chucks 11 are raised simultaneously. When the operation of the air cylinder 33 is stopped, the chuck 11 is lowered by the spring 18 fixed to the chuck 11. FIG. 3 shows a state where the chuck 11 is in the lowered position. Thus, the lift mechanism 30 and the spring 18 constitute a vertical movement mechanism that moves the chuck 11 up and down.

  Although not shown, a plurality of electric cylinders that simultaneously raise the chuck 11 may be used instead of the air cylinder 33. For example, eight electric cylinders may be provided for the eight chucks 11. In this case, the ring stage 31 is not used. When the rotation of the wafer W stops, the stop position of the chuck 11 is controlled so that each chuck 11 is positioned above each electric cylinder. In order to synchronize the operation of these electric cylinders, the operation of the electric cylinders is controlled by a common driver.

  The chuck 11 includes a clamp 40 that holds the peripheral edge of the wafer W. Each of the clamps 40 is movable between a first position that holds the peripheral edge of the wafer W and a second position that is separated from the wafer W. When the chuck 11 is in the lowered position shown in FIG. 3, the plurality of clamps 40 move to the first position and hold the wafer W. When the chuck 11 is in the raised position shown in FIG. 4, the plurality of clamps 40 move to the second position, that is, move away from the wafer W and release the wafer W.

  As shown in FIG. 2, the scrubber 50 is disposed on the upper side of the wafer W. The scrubber 50 is connected to one end of a swing arm 53 via a scrubber shaft 51, and the other end of the swing arm 53 is fixed to a swing shaft 54. The swing shaft 54 is connected to the shaft rotation mechanism 55. When the swing shaft 54 is driven by the shaft rotation mechanism 55, the scrubber 50 moves between a processing position shown in FIG. A scrubber lifting mechanism 56 that moves the scrubber 50 in the vertical direction is further connected to the swing shaft 54. The scrubber lifting mechanism 56 lifts and lowers the scrubber 50 via the swing shaft 54 and the scrubber shaft 51. The scrubber 50 is lowered until it contacts the upper surface of the wafer W by the scrubber lifting mechanism 56. As the scrubber lifting mechanism 56, an air cylinder or a combination of a servo motor and a ball screw is used.

  The swing arm 53 to which the scrubber 50 is connected, the swing shaft 54 to which the swing arm 53 is fixed, the shaft rotation mechanism 55 to which the swing shaft 54 is connected, and the scrubber lifting mechanism 56 are a first scrubber moving mechanism. Is configured. Note that the first scrubber moving mechanism may have a configuration other than the above-described components (that is, the swing arm 53, the swing shaft 54, the shaft rotation mechanism 55, and the scrubber lifting mechanism 56).

  FIG. 5 is a view showing the internal structure of the scrubber 50 and the swing arm 53. As shown in FIG. 5, the swing arm 53 is provided with a scrubber rotation mechanism 58 that rotates the scrubber 50 about its axis. The scrubber rotating mechanism 58 includes a pulley p1 fixed to the scrubber shaft 51, a motor M1 provided on the swing arm 53, a pulley p2 fixed to the rotating shaft of the motor M1, and pulleys p1 and p2. Belt b1. The rotation of the motor M1 is transmitted to the scrubber shaft 51 by the pulleys p1 and p2 and the belt b1, and the scrubber 50 rotates together with the scrubber shaft 51.

  FIG. 6 is a view of the scrubber 50 as viewed from below. The lower surface of the scrubber 50 constitutes a circular scrubbing surface that scrubs (rubs or polishes) the upper surface (the front surface or the back surface of the wafer W) held by the substrate rotation mechanism 10. The scrubber 50 includes a cleaning tape 61 as a plurality of scrubbing members arranged to face the upper surface of the wafer W. The scrubber 50 includes a plurality of (three in FIG. 6) tape cartridges 60, and a cleaning tape 61 is accommodated in each tape cartridge 60. These tape cartridges 60 are detachably installed inside the scrubber 50.

  When scrubbing the wafer W, the scrubber rotation mechanism 58 rotates the scrubber 50 around its axis, and the cleaning tape 61 rotates around the center axis of the scrubber 50. As a result, the cleaning tape 61 is brought into sliding contact with the upper surface of the wafer W. As described above, the scrubbing surface of the scrubber 50 is formed by the plurality of rotating cleaning tapes 61.

  Since the lower surface of the wafer W is supported by fluid pressure, the cleaning tape 61 can be pressed against the upper surface of the wafer W with a large load without bending the wafer W. The material constituting the upper surface of the wafer W is slightly scraped off by sliding contact with the cleaning tape 61, whereby foreign matters adhering to the wafer W and surface scratches on the wafer W can be removed. The amount of the wafer W scraped off by the scrubber 50 is preferably 50 nm or less, and the surface roughness after scrubbing the wafer W is preferably 5 μm or less. Thus, by slightly shaving off the surface of the wafer W, foreign matter having a size of 100 nm or more biting into the wafer W can be removed 100%.

  FIG. 7 is a cross-sectional view showing the tape cartridge 60 provided in the scrubber 50. As shown in FIG. 7, the tape cartridge 60 includes a cleaning tape 61, a pressing member 62 that presses the cleaning tape 61 against the wafer W, and a biasing mechanism 63 that biases the pressing member 62 toward the wafer. And a tape delivery reel 64 for feeding out the cleaning tape 61 and a tape take-up reel 65 for taking up the cleaning tape 61 used for cleaning. The cleaning tape 61 is sent from the tape supply reel 64 to the tape take-up reel 65 via the pressing member 62. The plurality of pressing members 62 extend along the radial direction of the scrubber 50 and are arranged at equal intervals in the circumferential direction of the scrubber 50. Therefore, the wafer contact surface (substrate contact surface) of each cleaning tape 61 extends in the radial direction of the scrubber 50. In the example shown in FIG. 7, a spring is used as the biasing mechanism 63.

  The tape take-up reel 65 is connected to one end of a tape take-up shaft 67 shown in FIGS. A bevel gear 69 is fixed to the other end of the tape take-up shaft 67. The bevel gears 69 connected to the plurality of tape cartridges 60 mesh with the bevel gear 70 connected to the motor M2. Therefore, the tape take-up reel 65 of the tape cartridge 60 is driven by the motor M2 to take up the cleaning tape 61. The motor M 2, the bevel gears 69 and 70, and the tape take-up shaft 67 constitute a tape feed mechanism that sends the cleaning tape 61 from the tape feed reel 64 to the tape take-up reel 65.

  The cleaning tape 61 has a width of 10 mm to 60 mm and a length of 20 m to 100 m. Examples of the material used for the cleaning tape 61 include nonwoven fabric, woven fabric, and knitted fabric. Preferably, a nonwoven fabric harder than PVA sponge is used. By using such a non-woven fabric, foreign matter adhering to the wafer W, particularly foreign matter that has digged into the surface of the wafer W can be removed. Instead of the cleaning tape 61 having no abrasive grains, a polishing tape having a polishing layer containing abrasive grains formed on one side may be used as the scrub member.

  During the scrub process of the wafer W, the cleaning tape 61 is sent from the tape supply reel 64 to the tape take-up reel 65 at a predetermined speed. Therefore, the surface of the new (unused) cleaning tape 61 always contacts the wafer W. The cleaning tape 61 has an end mark (not shown) near its end. This end mark is detected by an end mark detection sensor 71 disposed in the vicinity of the cleaning tape 61. When the end mark detection sensor 71 detects the end mark of the cleaning tape 61, a detection signal is sent from the end mark detection sensor 71 to an operation control unit (not shown). The operation control unit that has received the detection signal issues a signal (alarm or the like) that prompts replacement of the cleaning tape 61. The tape cartridge 60 can be removed separately, and the tape cartridge 60 can be replaced with a simple operation.

  The retreat position of the scrubber 50 is outside the substrate rotation mechanism 10, and the scrubber 50 moves between the retreat position and the processing position. At the retreat position of the scrubber 50, a tank (not shown) in which a processing liquid (for example, pure water) is stored is installed. When the scrubber 50 is in the retracted position, the lower surface (scrub surface) of the scrubber 50 is submerged in order to prevent the scrub member (more specifically, the cleaning tape 61) from drying. The processing liquid in the tank is replaced every time the scrubber 50 performs the surface treatment of the wafer W, and is always maintained in a clean state.

  FIG. 8 is a view showing another embodiment of the tape cartridge 60. As shown in FIG. 8, the tape cartridge 60 includes a plurality of (three in this embodiment) pressing members 62A to 62C, and a plurality of (this embodiment) urging these pressing members 62A to 62C toward the wafer W. In the embodiment, three urging mechanisms 63A to 63C are provided. The urging mechanisms 63A to 63C are connected to the pressing members 62A to 62C, respectively. In the example shown in FIG. 8, a telescopic air cylinder (extensible member) is used as the urging mechanisms 63A to 63C. In the present embodiment, each of the pressing members 62A to 62C is composed of a rotatable roller.

  The pressing members 62A to 62C and the urging mechanisms 63A to 63C are arranged in parallel to each other and at equal intervals. When the upper surface of the wafer W is scrubbed, as shown in FIG. 8, the central biasing mechanism 63A is extended so that the lower surface of the central pressing member 62A is positioned below the lower surfaces of the pressing members 62B and 62C on both sides. Let As a result, the cleaning tape 61 is curved along the outer peripheral surface of the pressing member 62 </ b> A, and the curved portion is locally in contact with the upper surface of the wafer W. Instead of extending the urging mechanism 63A, the urging mechanisms 63B and 63C on both sides may be contracted. In the example shown in FIG. 8, the cleaning tape 61 is in line contact with the upper surface of the wafer W, so that the upper surface of the wafer W can be processed precisely. An abrasive tape may be used instead of the cleaning tape 61.

  FIG. 9 is a view showing the tape cartridge 60 in a state where the urging mechanism 63A is contracted. As shown in FIG. 9, the urging mechanism 63A is contracted so that the lower surface of the pressing member 62A is positioned above the lower surfaces of the pressing members 62B and 62C. As a result, the pressing member 62A is separated from the cleaning tape 61, and the cleaning tape 61 is curved along the outer peripheral surfaces of the pressing members 62B and 62C. The cleaning tape 61 extending between these curved portions is in contact with the wafer W over a wide range. Instead of contracting the urging mechanism 63A, the urging mechanisms 63B and 63C on both sides may be extended. Since the cleaning tape 61 is in surface contact with the wafer W, the processing rate (polishing rate) of the wafer W can be improved.

  In one embodiment, the scrubber 50 may include a pad member impregnated with a polishing liquid containing abrasive grains as a scrub member. The polishing liquid containing the abrasive grains can be configured to be directly supplied to the pad member from a polishing liquid supply mechanism (not shown). In other embodiments, the scrubber 50 may include a grinder provided with a grindstone as a scrub member. The grindstones are provided at predetermined intervals on the contact surface of the grinder with the wafer W. The grinder may have a hemispherical shape or a truncated cone shape.

  FIG. 10A is a plan view showing the clamp 40 of the chuck 11, and FIG. 10B is a side view of the clamp 40. As shown in FIGS. 10A and 10B, the chuck 11 includes a clamp 40, a support column 203 that can rotate around its own axis AX, and a cam follower 205 coupled to the clamp 40. ing. The cam follower 205 is connected to the clamp 40 via a support column 203. A detailed description of the cam follower 205 will be described later.

  The clamp 40 is provided at the upper end of the support column 203 extending in the vertical direction, and is disposed at a position away from the axis AX of the support column 203. In the present embodiment, the clamp 40 has a cylindrical shape and can hold the peripheral edge of the wafer W. A positioning portion 41 extending from the clamp 40 toward the axis AX of the column 203 is formed at the upper end of the column 203. The positioning part 41 is located on the axis AX of the column 203. The positioning portion 41 is integrally connected to the side surface of the clamp 40. The end portion on the center side of the positioning portion 41 has a side surface 41 a that is curved along a circle concentric with the column 203. The upper end of the column 203 is a tapered surface inclined downward.

  FIG. 11A is a plan view showing a state in which the clamp 40 holds the wafer W, and FIG. 11B is a plan view showing a state in which the clamp 40 is separated from the wafer W. 11A, the clamp 40 is in the first position, and in FIG. 11B, the clamp 40 is in the second position. The wafer W is placed on the upper end (tapered surface) of the support 203, and the clamp 40 is moved to the first position by rotating the support 203 about its axis AX. As a result, the peripheral edge of the wafer W is held by the clamp 40 as shown in FIG. At this time, a part of the clamp 40 is located above the top edge portion E1 of the wafer W (see FIGS. 1A and 1B).

  When the column 203 is rotated in the opposite direction around the axis AX, the clamp 40 is separated from the wafer W as shown in FIG. 11B, thereby releasing the wafer W. At this time, the peripheral edge portion of the wafer W is in contact with the side surface 41 a of the center side end portion of the positioning portion 41. Therefore, the side surface 41a of the positioning part 41 can restrict the displacement of the wafer W accompanying the rotation of the support column 203, and the stability of subsequent wafer conveyance can be improved.

  12A is a cross-sectional view of the chuck 11, and FIG. 12B is a cross-sectional view taken along line AA of FIG. 12A. A through hole extending vertically is formed in the protruding portion 16a of the rotating base 16, and a column 203 is inserted into the through hole. The diameter of the through-hole is slightly larger than the diameter of the support 203, so that the support 203 and the clamp 40 are movable relative to the rotary base 16 in the vertical direction. It can rotate around AX.

  A spring stopper 11 a is attached to the lower part of the support 203. A spring 18 is disposed around the column 203, and the spring 18 is supported by the spring stopper 11a. The upper end of the spring 18 presses the protrusion 16 a of the rotary base 16. Accordingly, a downward force is applied to the column 203 and the clamp 40 by the spring 18. A chuck stopper 11 b having a diameter larger than the diameter of the through hole is formed on the outer peripheral surface of the support column 203. Therefore, as shown in FIG. 12A, the support 203 and the clamp 40 are restricted from moving downward by the chuck stopper 11b.

  A first magnet 43 is embedded in the rotary base 16, and the first magnet 43 is disposed to face the side surface of the support column 203. A second magnet 44 and a third magnet 45 are arranged on the column 203. The second magnet 44 and the third magnet 45 are arranged so as to be separated in the vertical direction. As these 1st-3rd magnets 43,44,45, a neodymium magnet is used suitably.

  FIG. 13 is a schematic diagram for explaining the arrangement of the second magnet 44 and the third magnet 45, and is a view seen from the axial direction of the column 203. As shown in FIG. 13, the second magnet 44 and the third magnet 45 are arranged so as to be shifted in the circumferential direction of the column 203. That is, a line connecting the second magnet 44 and the center of the support 203 and a line connecting the second magnet 44 and the center of the support 203 are at a predetermined angle α when viewed from the axial direction of the support 203. We are in a cross.

  When the chuck 11 is in the lowered position shown in FIG. 12A, the first magnet 43 and the second magnet 44 face each other. At this time, an attractive force acts between the first magnet 43 and the second magnet 44. This attractive force gives the column 203 and the clamp 40 a force to rotate around the axis AX, and the rotation direction is a direction in which the clamp 40 approaches the wafer W. Accordingly, the lowered position shown in FIG. 12A is a clamp position (that is, the first position) for holding the wafer W.

  Hereinafter, in the present specification, these magnets 43 and 44 may be collectively referred to as a clamp urging mechanism. The clamp biasing mechanism biases the clamp 40 in the direction from the second position to the first position by an attractive force acting between the magnets 43 and 44.

  14A is a cross-sectional view when the chuck 11 is lifted by the lift mechanism 30, and FIG. 14B is a cross-sectional view taken along line BB in FIG. 14A. When the chuck 11 is raised to the raised position shown in FIG. 14A by the lift mechanism 30, the first magnet 43 and the third magnet 45 face each other, and the second magnet 44 is separated from the first magnet 43. To do. At this time, an attractive force acts between the first magnet 43 and the third magnet 45. This attractive force gives the column 203 and the clamp 40 a force to rotate about the axis AX, and the rotation direction is a direction in which the clamp 40 is separated from the wafer W. Accordingly, the raised position shown in FIG. 14A is an unclamping position (that is, the second position) for releasing the substrate.

  Since the second magnet 44 and the third magnet 45 are arranged at positions shifted in the circumferential direction of the column 203, a rotational force acts on the column 203 as the column 203 moves up and down. By this rotational force, a force for holding the wafer W and a force for releasing the wafer W are applied to the clamp 40 provided on the support 203. Therefore, the wafer W can be held and released only by moving the column 203 and the clamp 40 up and down.

  A groove 46 extending along the axis AX is formed on the side surface of the column 203. The groove 46 has an arcuate horizontal cross section. A protruding portion 47 that protrudes toward the groove 46 is formed on the protruding portion 16 a of the rotating base 16. The tip of the protrusion 47 is located inside the groove 46, and the protrusion 47 is gently engaged with the groove 46. The groove 46 and the protrusion 47 are provided to limit the rotation angle of the support column 203 and the clamp 40.

  When the peripheral edge of the wafer W is held by the chuck 11, a part of the clamp 40 is located above the top edge E1 of the wafer W (see FIGS. 1A and 1B). Conventionally, for example, as shown in Patent Document 2, in order to process the entire upper surface of the wafer W, a process of processing an outer side region of the upper surface of the wafer W and a central region of the upper surface of the wafer W are processed. Process. In the present embodiment, the substrate processing apparatus moves the plurality of clamps 40 individually at predetermined positions from the first position to the second position while the wafer W is rotating, and includes the wafer including the top edge portion E1. A clamp moving mechanism 200 for processing the entire upper surface of W is provided. Therefore, according to the present embodiment, the entire processing of the upper surface of the wafer W can be performed in one process (that is, one substrate processing apparatus).

  FIG. 15 is a perspective view of the clamp moving mechanism 200. FIG. 16 is a plan view showing the static pressure support mechanism 90 and the clamp moving mechanism 200. FIG. 17 is a plan view showing the scrubber 50 and the clamp moving mechanism 200. 15 to 17, only elements necessary for explaining the clamp moving mechanism 200 are illustrated. The clamp moving mechanism 200 includes a cam 201 disposed in the vicinity of the scrubber 50 and the cam follower 205 described above.

  Hereinafter, the details of the cam follower 205 will be described with reference to FIGS. 10 (a) and 10 (b). As shown in FIGS. 10A and 10B, the cam follower 205 can rotate integrally with the column 203 around the axis AX of the column 203 and is away from the axis AX of the column 203. The cam contact surface 202 is located on the surface. The cam follower 205 is disposed below the clamp 40 and is disposed above the protruding portion 16 a of the rotating base 16. The cam contact surface 202 is disposed at the same height as the cam 201, and the cam follower 205 including the cam contact surface 202 can contact the cam 201.

  The cam follower 205 is an element that rotates the clamp 40 around the axis AX of the column 203 by contact with the cam 201. Since the cam follower 205 is connected to the clamp 40 via the support column 203, the clamp 40 can be moved from the first position to the second position by contact between the cam follower 205 and the cam 201.

  In this embodiment, the cam follower 205 is a ring-shaped protrusion that extends outward from the outer surface of the column 203, and the cam contact surface 202 constitutes a part of this protrusion. In this embodiment, the diameter of the cam follower 205 is larger than the diameter of the column 203. In one embodiment, the cam follower 205 may protrude from a part of the outer surface of the column 203. In another embodiment, the cam follower 205 may be a recess formed in a part of the outer surface of the column 203. In this case, the cam contact surface 202 constitutes a part or all of this recess. The cam follower 205 and the column 203 may be an integrally formed member, or the cam follower 205 and the column 203 may be separate members.

  The cam contact surface 202 is a flat surface extending in parallel with the axis AX of the column 203. Therefore, the cam follower 205 has a cam contact surface 202 that is a flat surface and a curved surface connected to the cam contact surface 202. When the chuck 11 is viewed from above, the cam contact surface 202 is disposed on the opposite side of the clamp 40 across the axis AX of the support column 203. The cam contact surface 202 is disposed below the clamp 40.

  Details of the cam 201 will be described. As shown in FIGS. 2 and 15, the cam 201 is disposed in a space inside the substrate rotation mechanism 10, more specifically, in a space surrounded by the plurality of chucks 11, and is disposed below the clamp 40. Has been. Therefore, the cam 201 is disposed below the wafer W held by the plurality of clamps 40. In the present embodiment, the cam 201 has an arc shape and extends horizontally, that is, parallel to the wafer W held by the clamp 40. In the present embodiment, the cam 201 has a plate shape, but the shape of the cam 201 is not limited to this embodiment, and may have, for example, a cylindrical shape.

  The material of the cam 201 is not particularly limited, and may be made of metal or resin. The cam 201 is not necessarily arranged in the space inside the substrate rotation mechanism 10 as long as the cam follower 205 can contact the cam 201. Depending on the shape of the cam 201, the cam 201 is arranged in the space outside the substrate rotation mechanism 10. May be.

  As shown in FIG. 16, the cam 201 is fixed to the static pressure support mechanism 90 and is an integrally molded member with the static pressure support mechanism 90. In one embodiment, the cam 201 may be a separate member from the static pressure support mechanism 90, and in another embodiment, the cam 201 may be provided independently of the static pressure support mechanism 90. The cam 201 may be supported by a support member (not shown) provided in a space inside the substrate rotation mechanism 10. The cam 201 extends toward the outside of the static pressure support mechanism 90, and has an arc surface 201a with which the cam contact surface 202 contacts. The arc surface 201 a is located between the static pressure support mechanism 90 and the chuck 11.

  The arc surface 201 a is an arc-shaped surface projecting outside the static pressure support mechanism 90, and extends along the traveling direction of the plurality of chucks 11. The circular arc surface 201a is located in the course of the chuck 11 so that it can contact the cam follower 205. Therefore, when the plurality of chucks 11 are rotated by the hollow motor 12, the cam contact surface 202 of the cam follower 205 has an arc of the cam 201 for a predetermined section (that is, a section where the arc surface 201 a is located in the course of the chuck 11). The clamp 40 is moved from the first position to the second position in contact with the surface 201a.

  The cam 201 is located below the scrubber 50 and extends from the upstream side of the scrubber 50 to the downstream side of the scrubber 50 in the rotation direction of the wafer W, that is, the rotation direction of the plurality of chucks 11. Therefore, as shown in FIG. 17, when the scrubber 50 and the cam 201 are viewed from above, a part of the cam 201 protrudes from the scrubber 50 upstream and downstream of the scrubber 50.

  The cam 201 is disposed at a position where the clamp 40 should be moved from the first position to the second position. Similarly, the cam 201 is disposed at a position where the clamp 40 should be moved from the second position to the first position.

  18 to 23 are views showing a state in which the clamp 40 moves between the first position and the second position. 18 to 23, only one chuck 11 is shown, and the operation of this chuck 11 will be described. As shown in FIG. 18, when the chuck 11 advances along the circumferential direction of the wafer W by the rotation of the hollow motor 12, the chuck 11 approaches the scrubber 50, and the cam follower 205 of the chuck 11 eventually becomes the arc surface 201 a of the cam 201. To touch.

  As shown in FIG. 19, when the chuck 11 further proceeds with the cam follower 205 in contact with the cam 201, the column 203 is centered on the axis AX of the column 203 due to friction between the cam follower 205 and the arc surface 201 a of the cam 201. Rotate as Since the clamp 40 is provided on the support 203, the clamp 40 is moved from the first position to the second position by the rotation of the support 203, and the clamp 40 is separated from the wafer W.

  When the column 203 rotates about its axis AX, the cam contact surface 202 contacts the arcuate surface 201 a of the cam 201. Since the cam contact surface 202 is a flat surface, the movement of the clamp 40 from the second position to the first position is limited as long as the cam contact surface 202 is in contact with the arcuate surface 201a. Therefore, the cam 201 can also be called a clamp rotation limiting plate. As shown in FIGS. 20 and 21, the chuck 11 advances in the circumferential direction of the wafer W while the cam contact surface 202 is in contact with the circular arc surface 201a. Therefore, the chuck 11 advances while the position of the clamp 40 is maintained at the second position.

  When the chuck 11 further advances and the chuck 11 moves away from the scrubber 50 (see FIG. 22), the cam contact surface 202 moves away from the arc surface 201a at the end of the arc surface 201a of the cam 201 as shown in FIG. Separate. As a result, the restriction on the movement of the clamp 40 from the second position to the first position is released. Therefore, as shown in FIG. 23, the clamp 40 is moved from the second position to the first position by the clamp urging mechanism (that is, the magnets 43 and 44), and the chuck 11 holds the peripheral portion of the wafer W again. The clamp urging mechanism is an element that constitutes the clamp moving mechanism 200, similarly to the cam 201 and the cam follower 205.

  FIG. 24 is a plan view of the scrubber 50 and the cam 201. FIG. 25 is a side view of the scrubber 50 and the cam 201. As shown in FIGS. 24 and 25, the scrubbing surface composed of the rotating cleaning tape 61 is in contact with the upper surface of the wafer W. This scrubbing surface can contact a region including the center CP of the wafer W and the top edge portion E1 of the wafer W (see FIGS. 1A and 1B). The scrubber 50 may scrub the wafer W while swinging in the horizontal direction.

  According to this embodiment, by the combination of the cam follower 205 and the cam 201, the cam follower 205 can move the clamp 40 from the first position to the second position before the clamp 40 contacts the scrubber 50. Therefore, the scrubber 50 can scrub the entire upper surface of the wafer W without the clamp 40 contacting the scrubber 50. Therefore, the entire upper surface (front surface or back surface) of the wafer W including the top edge portion E1 (see FIGS. 1A and 1B) of the wafer W can be reliably processed in one process. As a result, the scrubber 50 can reliably remove the foreign matter adhering to the entire front surface and / or back surface of the wafer W.

  Furthermore, according to the present embodiment, the clamp moving mechanism 200 (that is, the cam follower 205, the cam 201, and the clamp urging mechanism) is positioned below the wafer W held by the plurality of clamps 40. Therefore, even if the cam follower 205 comes into contact with the cam 201 and particles are generated, the particles do not contact the upper surface of the wafer W being scrubbed.

  In the present embodiment, the substrate processing apparatus includes eight chucks 11, and the peripheral portion of the wafer W is basically held by eight clamps 40. During the scrub process of the wafer W, at least one of the plurality of clamps 40 moves from the first position to the second position, and the other clamps 40 hold the peripheral edge of the wafer W. Therefore, even if the wafer W is rotated by the substrate rotating mechanism 10, the wafer W is not separated from the chuck 11 and jumps outside.

  According to the present embodiment, the number of clamps 40 that hold the peripheral edge of the wafer W can be arbitrarily determined. In one embodiment, the number of clamps 40 provided in the substrate processing apparatus is set to a numerical value 4 (that is, four clamps 40) as the number of clamps 40 that move from the first position to the second position during the scrubbing process of the wafer W. It is the number added. Therefore, for example, when eight clamps 40 are provided, the number of clamps 40 that can move from the first position to the second position during the scrubbing process of the wafer W is four. The number of clamps 40 to be moved from the first position to the second position is determined based on factors such as the size of the arc surface 201a of the cam 201 and the arrangement interval of the clamps 40.

  In the embodiment described above, one cam 201 is provided, but the number of cams 201 is not limited to this embodiment. The substrate processing apparatus may include a plurality of (at least two or more) cams as long as the wafer W does not jump out even if the wafer W rotates, that is, if the clamp 40 can reliably hold the wafer W. In one embodiment, the plurality of cams may be arranged close to each other, and in another embodiment, the plurality of cams may be arranged symmetrically across the center CP of the wafer W.

  Next, the operation of the substrate processing apparatus of this embodiment will be described. The scrubber 50 is moved to the retracted position outside the substrate rotating mechanism 10. In this state, the wafer W is transferred above the substrate rotation mechanism 10 by a transfer device (not shown). The chuck 11 is raised by the lift mechanism 30 and the wafer W is placed on the upper end of the chuck 11. When the chuck 11 is lowered, the wafer W is held by the clamp 40 of the chuck 11. The wafer W is held by the substrate rotation mechanism 10 so that the back surface (that is, the surface where no device is formed) faces upward and the surface where the device is formed faces downward.

  The scrubber 50 is moved from the retracted position to the processing position. The wafer W is rotated at a predetermined speed by the substrate rotation mechanism 10. The scrubber 50 is rotated by the scrubber rotating mechanism 58 and lowered by the scrubber lifting mechanism 52 until the cleaning tape 61 comes into contact with the upper surface of the wafer W. While pure water is supplied as a processing liquid from the liquid supply nozzle 27 to the upper surface of the wafer W, the upper surface of the wafer W is processed by the scrub surface formed of the rotating cleaning tape 61. Instead of pure water, a polishing liquid containing abrasive grains may be used as the processing liquid. Or you may use the cleaning tape which the abrasive grain adhered to the surface. Further, the cleaning tape 61 may be slidably contacted with the wafer W in a dry state without using the processing liquid.

  During the scrubbing process, the wafer W is supported by the static pressure support mechanism 90 from below. In this state, the scrubber 50 rotates the plurality of cleaning tapes 61 about their axes while holding the cleaning tapes 61. It is brought into sliding contact with the upper surface of the wafer W. Thereby, the foreign substance adhering to the upper surface of the wafer W and the damage | wound on a wafer surface are removable. Since the wafer W is supported by the static pressure support mechanism 90, the scrubber 50 can bring the cleaning tape 61 into sliding contact with the wafer W with a large load. Accordingly, it is possible to remove relatively large foreign matters that could not be removed by the conventional cleaning apparatus and foreign matters that have digged into the surface of the wafer W.

  The scrubber 50 and the wafer W are rotated in the same direction. The rotational speed of the scrubber 50 is set so that the relative speeds of the wafer W and the cleaning tape 61 are the same at all the portions of the cleaning tape 61 that are in contact with the wafer W. The rotational speed of the scrubber 50 is determined depending on the rotational speed of the wafer W. After scrubbing the wafer W, the scrubber 50 is moved to the retracted position.

  After scrubbing the wafer W, the scrubber 50 is moved to the retracted position. Pure water as a cleaning liquid is supplied to the upper surface of the wafer W from the liquid supply nozzle 27, and the waste generated by the scrub process is washed away. Thereafter, if necessary, a cleaning liquid is supplied from the cleaning nozzle 100 to the upper surface of the wafer W, and minute foreign matters and debris that have not been removed by the scrubber 50 are removed. The cleaning nozzle 100 is disposed above the wafer W. During the cleaning of the wafer W, the wafer W may be supported by the static pressure support mechanism 90.

  FIG. 26 is a diagram showing another embodiment of the substrate processing apparatus. In FIG. 26, the static pressure support mechanism 90 is not shown for easy viewing of the drawing. As shown in FIG. 26, the scrubber 50 includes a pad member 150 as a scrub member. In the present embodiment, the pad member (abrasive tool) 150 is an elastic member having abrasive grains attached or fixed to the surface thereof. Although the scrubber 50 and the pad member 150 have an elliptical shape, the shapes of the scrubber 50 and the pad member 150 are not limited to this embodiment, and may have a circular shape.

  The scrubber 50 includes a cleaning tape 61 having no abrasive grains, a polishing tape having abrasive grains, a pad member configured to be impregnated with a polishing liquid containing abrasive grains supplied from a polishing liquid supply mechanism, and abrasive grains on the surface. There may be provided a scrub member made of any one of an elastic member to which is attached or fixed, a grinder having a grindstone, or a combination selected from any of these.

  The pad member 150 is provided on the lower surface of the scrubber 50 and can contact the upper surface of the wafer W. In the present embodiment, the scrubber 50 is fixed to one end of the swing arm 53, and the swing shaft 54 is fixed to the other end of the swing arm 53. When the oscillating shaft 54 is driven, the scrubber 50 moves between a processing position above the upper surface of the wafer W and a retracted position on the outer side in the radial direction of the wafer W.

  The liquid supply nozzle 27 is connected to the nozzle turning shaft 151 and is configured to be turnable about the nozzle turning shaft 151. The liquid supply nozzle 27 is configured to move between a processing position above the upper surface of the wafer W and a retracted position on the outer side in the radial direction of the wafer W. A nozzle cleaning unit 152 that cleans the tip of the liquid supply nozzle 27 (that is, the liquid supply port) may be provided at the retreat position. When the liquid supply nozzle 27 is in the retracted position, the tip of the liquid supply nozzle 27 is cleaned by the nozzle cleaning unit 152.

  FIG. 27 is a view showing still another embodiment of the substrate processing apparatus. Also in FIG. 27, illustration of the static pressure support mechanism 90 is omitted. In FIG. 27, the substrate processing apparatus further includes a fixed base 160 extending in the horizontal direction, and a lifter 161 coupled to the fixed base 160 and configured to be movable on the fixed base 160 in the horizontal direction. The fixed base 160 and the lifter 161 are arranged on the outside in the radial direction of the wafer W, that is, outside the substrate rotating mechanism 10. Also in this embodiment, the scrubber 50 includes the pad member 150 as a scrub member. In this embodiment, the scrubber 50 and the pad member 150 have a circular shape, but the scrubber 50 and the pad member 150 may have an elliptical shape as in the embodiment shown in FIG.

  A scrubber arm 153 is fixed to the lifter 161. The scrubber arm 153 is an arm member extending in the horizontal direction from the lifter 161 toward the wafer W. The scrubber 50 is fixed to one end of the scrubber arm 153, and the other end of the scrubber arm 153 is fixed to the lifter 161. Therefore, the scrubber 50 moves in the horizontal direction integrally with the lifter 161, and is raised and lowered by the lifter 161. As a drive source for moving the lifter 161 in the vertical direction and the horizontal direction, a linear motor or a rack and pinion can be used. With such a configuration, the scrubber 50 can move linearly with respect to the horizontal and vertical directions, that is, with respect to the upper surface of the wafer W, by the lifter 161. The fixed base 160 and the lifter 161 constitute a second scrubber moving mechanism. The second scrubber moving mechanism may include components other than the components described above (that is, the fixed base 160 and the lifter 161).

  FIG. 28 is a view showing still another embodiment of the substrate processing apparatus. Also in this embodiment, the scrubber 50 includes the pad member 150 as a scrub member. In the present embodiment, the liquid supply nozzle 27 is attached to the side surface of the swing arm 53 (or the scrubber 50), and the liquid supply nozzle 27 can move together with the scrubber 50. That is, when the scrubber 50 is turned in the horizontal direction by driving the swing shaft 54, the liquid supply nozzle 27 is also turned in the horizontal direction together with the scrubber 50. When the scrubber 50 is moved up and down by the scrubber lifting mechanism 56 (see FIG. 2), The liquid supply nozzle 27 moves up and down together with the scrubber 50. The liquid supply nozzle 27 is connected to a liquid supply source (not shown) via a liquid supply line 154.

  FIG. 29 is a plan view schematically showing one embodiment of a substrate processing system including the above-described substrate processing apparatus. In the present embodiment, the substrate processing system includes a load / unload unit 120 including a front load unit 121 on which a wafer cassette for stocking a large number of wafers is placed. The front load unit 121 can be equipped with an open cassette, a SMIF (Standard Manufacturing Interface) pod, or a FOUP (Front Opening Unified Pod). SMIF and FOUP are sealed containers that can maintain an environment independent of the external space by accommodating a wafer cassette inside and covering with a partition wall.

  The load / unload unit 120 is provided with a first transfer robot (loader) 123 that can move along the arrangement direction of the front load unit 121. The first transfer robot 123 can access the wafer cassette mounted on the front load unit 121 and take out the wafer from the wafer cassette.

  The substrate processing system includes a second transfer robot 126 that can move in the horizontal direction, a plurality of substrate processing apparatuses 127 arranged along the moving direction of the transfer robot 126, and an operation that controls the operation of the entire substrate processing system. The controller 133 further includes a cleaning unit 172 for cleaning the polished wafer, and a drying unit 173 for drying the cleaned wafer. These substrate processing apparatuses 127 have the same configuration as the above-described substrate processing apparatus. In the embodiment shown in FIG. 29, the substrate processing apparatus 127 is a polishing apparatus provided with a scrubber (polishing head) 50 having a scrub member. It is.

  The wafer in the wafer cassette is transferred to the substrate processing apparatus 127 by the first transfer robot 123, and the upper surface of the wafer is polished here. The wafer is taken out from the substrate processing apparatus 127 by the second transfer robot 126 and transferred to the cleaning unit 172. In one embodiment, the cleaning unit 172 includes an upper roll sponge and a lower roll sponge arranged so as to sandwich the wafer, and cleans both surfaces of the wafer with these roll sponges while supplying a cleaning liquid to both surfaces of the wafer. .

  The cleaned wafer is transferred to the drying unit 173 by the second transfer robot 126. In one embodiment, the drying unit 173 spin-drys the wafer by rotating the wafer about its axis at high speed. The dried wafer is returned to the wafer cassette of the front load unit 121 by the first transfer robot 123. In this manner, the substrate processing system can perform a series of steps of wafer polishing, cleaning, and drying.

  In order to polish the entire upper surface of a wafer, a conventional substrate processing system (see, for example, Patent Document 2) includes a first substrate processing apparatus for polishing an outer peripheral side region of a wafer and a first substrate processing region for polishing a central side region of a wafer. 2 substrate processing apparatus. In other words, the conventional substrate processing system requires a total of two substrate processing apparatuses. Further, in such a system, the entire upper surface of the wafer cannot be processed unless at least two processes are performed.

  In the present embodiment, since the substrate processing apparatus includes the clamp moving mechanism 200, the substrate processing system can polish the entire upper surface of the wafer with one substrate processing apparatus 127. Therefore, the substrate processing system can include more substrate processing apparatuses 127 with the same area as the conventional substrate processing system. In the present embodiment, the substrate processing system includes two substrate processing apparatuses 127, and each substrate processing apparatus 127 can process the entire top surface of the wafer, so that the throughput of the wafer can be improved. .

  FIG. 30 is a diagram showing another embodiment of the substrate processing system. Since the entire upper surface of the wafer W can be processed in one process, the substrate processing system may include one substrate processing apparatus 127. As shown in FIG. 30, the cleaning unit 172 and the drying unit 173 may be arranged so as to overlap in the vertical direction. According to the present embodiment, since the substrate processing system only needs to include at least one substrate processing apparatus 127, the number of substrate processing apparatuses 127 can be reduced. Therefore, the cost of the substrate processing system can be reduced, and the installation area of the substrate processing system can be further reduced.

  The substrate processing system includes serial processing for continuously processing one wafer by a plurality of substrate processing apparatuses 127, parallel processing for processing a plurality of wafers in parallel by one substrate processing apparatus 127, and a plurality of sheets. Any combination of serial processing and parallel processing in which a plurality of substrate processing apparatuses 127 are used can be selectively executed.

  Although the embodiment of the present invention has been described so far, the present invention is not limited to the above-described embodiment, and it is needless to say that the present invention may be implemented in various different forms within the scope of the technical idea.

  For example, when the scrub process is completed if the wafer W is scrubbed only once, the clamp 40 moves in a direction approaching the scrubber 50 as the plurality of chucks 11 rotate. It is also possible to end the scrub process by bringing the cam follower 205 connected to the clamp 40 into contact with the cam 201 to move the clamp 40 from the first position to the second position and leaving the scrubber 50 away from the wafer W as it is. It is done. In such a case, the clamp urging mechanism can be omitted from the configuration.

DESCRIPTION OF SYMBOLS 10 Substrate rotation mechanism 11 Chuck 12 Hollow motor 12A Rotor 12B Stator 14 Stationary member 16 Rotation base 18 Spring 20 Angular contact ball bearing 25 Rotary cover 27 Liquid supply nozzle 30 Lift mechanism 31 Ring stage 32 Rod 33 Air cylinder 40 Clamp 41 Positioning portion 41a Side surfaces 43 to 45 Magnet 50 Scrubber 60 Tape cartridge 61 Cleaning tape (polishing tape)
62 pressing member 63 biasing mechanism 90 static pressure support mechanism 100 cleaning nozzle 121 front load unit 123 first transfer robot 126 second transfer robot 127 substrate processing device 133 operation controller 150 pad member 151 nozzle turning shaft 152 nozzle cleaning unit 153 Scrubber arm 154 Liquid supply line 160 Fixed base 161 Lifter 172 Cleaning unit 173 Drying unit 200 Clamp moving mechanism 201 Cam 201a Arc surface 202 Cam contact surface 203 Support column 205 Cam follower

Claims (13)

A plurality of chucks each having a clamp that is movable between a first position for holding a peripheral edge of the substrate and a second position spaced from the substrate;
A substrate rotation mechanism for rotating the substrate held by the plurality of chucks;
A scrubber for scrubbing the upper surface of the substrate held by the plurality of chucks;
A cam disposed in proximity to the scrubber;
Each of the plurality of chucks is
A substrate processing apparatus comprising: a cam follower coupled to the clamp and moving the clamp from the first position to the second position by contact with the cam.   The substrate processing apparatus according to claim 1, further comprising a clamp biasing mechanism that biases the clamp in a direction from the second position to the first position. Each of the plurality of chucks has a support column rotatable about its own axis,
The clamp is provided on the column and is located away from the axis of the column;
The substrate processing apparatus according to claim 1, wherein the cam follower is connected to the clamp via the support column.   The cam follower has a cam contact surface that can rotate integrally with the support column about the axis of the support column and is located away from the axis of the support column. 2. The substrate processing apparatus according to 1.   The substrate processing apparatus according to claim 4, wherein the cam contact surface is a flat surface.   The substrate processing apparatus according to claim 1, wherein the cam is positioned below the scrubber.   The scrubber includes a cleaning tape having no abrasive grains, a polishing tape having abrasive grains, a pad member impregnated with a polishing liquid containing abrasive grains, an elastic member having abrasive grains attached or fixed on its surface, or a grinder having a grindstone The substrate processing apparatus according to claim 1, comprising a scrub member made of any one of the above or a combination selected from any one of the above. The scrubber is
A scrub member made of a cleaning tape having no abrasive grains or an abrasive tape having abrasive grains;
The substrate processing apparatus according to claim 1, further comprising a plurality of urging mechanisms that urge the cleaning tape or the polishing tape toward the substrate. A first scrubber moving mechanism including a swing arm to which the scrubber is connected, a swing shaft to which the swing arm is fixed, and a shaft rotation mechanism to which the swing shaft is connected;
The substrate processing apparatus according to claim 1, wherein the first scrubber moving mechanism swings the scrubber horizontally with respect to the upper surface of the substrate. A second scrubber moving mechanism including a fixed base disposed outside the substrate rotation mechanism and a lifter coupled to the fixed base;
The substrate processing apparatus according to claim 1, wherein the second scrubber moving mechanism moves the scrubber in a horizontal direction with respect to an upper surface of the substrate. Holding the peripheral edge of the substrate with a plurality of chucks each having a clamp movable between a first position for holding the peripheral edge of the substrate and a second position spaced from the substrate;
Rotating the plurality of chucks with the substrate;
Scrub the top surface of the substrate with a scrubber,
When the clamp moves in a direction approaching the scrubber as the plurality of chucks rotate, a cam follower connected to the clamp is brought into contact with the cam to move the clamp from the first position to the second position. The substrate processing method characterized by making it move to.   When the clamp is moving in a direction away from the scrubber as the plurality of chucks rotate, the cam follower is moved away from the cam and the clamp is moved from the second position to the first position. The substrate processing method according to claim 11.   The substrate processing method according to claim 11, wherein the cam is positioned below the scrubber.

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