JP2018158375A - Laser processing method and laser processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To achieve laser processing with reduced cost while suppressing occurrence of burrs.SOLUTION: A laser processing method which irradiates a thin film 1 with a laser and processes the thin film includes: a laser branch step of branching a laser beam Lb output from one laser oscillator into a main beam LB1 for thin film processing, and a first side beam LB2 for removing a burr and a second side beam LB3 generated by irradiation with the main beam; a processing step of irradiating the thin film 1 with the main beam while relative movement of the main beam in the processing direction to form a processing line; and a burr removal step of irradiating both sides of the processing line formed on the thin film 1 by the processing step with the first side-beam and the second side-beam while keeping a predetermined relative position with the main beam to remove a burr B, where in the predetermined relative position, the main beam is on the upstream position in the processing direction, and the first side beam and the second side beam are on the upstream positions.SELECTED DRAWING: Figure 2

Description

The present invention relates to a laser processing method and a laser processing apparatus that suppress the generation of burrs.

In recent years, with the thinning of products and the use of flexible materials, the thinning of materials has progressed. In addition, there is a growing need for laser processing with a high degree of freedom in processing patterns in order to support high-mix low-volume production.

Patent Document 1 discloses a method for processing a thin film in which one pulse laser and two femtosecond lasers are combined to suppress separation of a split part (processed part), electrical short circuit, and generation of a leakage current, and A processing device is described.

Patent Document 1: Japanese Patent Application Laid-Open No. 2011-251317

However, since the configuration described in Patent Document 1 has a configuration in which one pulse laser and two femtosecond lasers are combined, there is a problem that a plurality of laser oscillators are required and the cost is increased.

An object of the present invention is to solve the above-described problems and to realize laser processing capable of suppressing generation of burrs and reducing costs.

In order to solve the above problems, the present invention is a laser processing method for processing by irradiating a thin film with a laser,
A laser branching step of branching a laser beam output from one laser oscillator into a main beam for thin film processing and a first sub beam and a second sub beam for removing burrs generated by irradiation of the main beam;
A processing step of forming a processing line by irradiating the main beam while moving the main beam relative to the thin film in a processing direction;
A burr removing step of removing burrs by irradiating both sides of the processing line formed in the thin film by the processing step with the first sub beam and the second sub beam while maintaining a predetermined relative position with the main beam. And comprising
The predetermined relative position provides a laser processing method, wherein the main beam is an upstream position in the processing direction, and the first sub beam and the second sub beam are downstream positions.

With this configuration, it is possible to irradiate three types of laser beams: a main beam for thin film processing, a first sub beam for removing burrs, and a second sub beam with a single laser oscillator, and the generation of burrs can be suppressed. The laser processing with reduced cost can be realized.

The predetermined relative position may be a position where the first sub beam and the second sub beam are symmetrical with respect to the processing line.

With this configuration, each beam can function effectively when the energy distribution of the main beam, the first sub beam, and the second sub beam is axisymmetric.

The first sub beam and the second sub beam may have a power smaller than that of the main beam.

With this configuration, it is possible to prevent new burrs from being generated by the irradiation of the first sub beam and the second sub beam.

In the laser branching step, the power of the main beam, the first sub beam, and the second sub beam may be individually controllable.

With this configuration, it is possible to output a laser beam having an optimum power depending on the material and thickness of the target thin film.

In order to solve the above-mentioned problems, the present invention provides a laser processing apparatus for processing a laser beam by irradiating a thin film with one laser oscillator for outputting a laser beam, and the laser beam as a main beam for thin film processing. A laser branching portion for branching into a first sub-beam and a second sub-beam for removing burrs generated by irradiation of the main beam, and a processing line that is irradiated while moving the main beam relative to the thin film And a beam irradiating unit that irradiates both sides of the processing line formed in the thin film with the first sub beam and the second sub beam while maintaining a predetermined relative position with the main beam. The predetermined relative position is such that the main beam is an upstream position in the processing direction, and the first sub beam and the second sub beam are downstream positions. There is provided an over processing apparatus.

With this configuration, it is possible to irradiate three types of laser beams: a main beam for thin film processing, a first sub beam for removing burrs, and a second sub beam with a single laser oscillator, and the generation of burrs can be suppressed. The laser processing with reduced cost can be realized.

The predetermined relative position may be a position where the first sub beam and the second sub beam are symmetrical with respect to the processing line.

With this configuration, each beam can function effectively when the energy distribution of the main beam, the first sub beam, and the second sub beam is axisymmetric.

The first sub beam and the second sub beam may be configured to have a smaller power than the main beam.

With this configuration, it is possible to prevent new burrs from being generated by the irradiation of the first sub beam and the second sub beam.

The laser branching unit may be configured to individually control powers of the main beam, the first sub beam, and the second sub beam.

With this configuration, it is possible to output a laser beam having an optimum power depending on the material and thickness of the target thin film.

With the laser processing method and the laser processing apparatus of the present invention, the generation of burrs can be suppressed, and laser processing with reduced costs can be realized.

It is a figure explaining the structure of the laser processing apparatus in Example 1 of this invention. It is a figure explaining the mode of thin film processing in Example 1 of this invention. It is a figure explaining the cross section of the thin film processing line in Example 1 of this invention. It is a figure explaining the laser reflective pattern in Example 1 of this invention. It is a figure explaining the laser reflection pattern in Example 2 of this invention. It is a figure explaining the laser reflection pattern in Example 3 of this invention. It is a figure explaining the laser reflection pattern in Example 4 of this invention.

A first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a diagram illustrating the configuration of a laser processing apparatus according to Embodiment 1 of the present invention. FIG. 2 is a diagram for explaining a state of thin film processing in the first embodiment of the present invention. FIG. 3 is a diagram for explaining a cross section of a thin film processing line according to the first embodiment of the present invention. FIG. 4 is a diagram for explaining a laser reflection pattern according to the first embodiment of the present invention.

The laser processing apparatus 100 according to the first embodiment of the present invention includes a laser oscillator 11 that outputs a laser beam L, a main beam LB1 for thin film processing, and irradiation of the main beam LB1. A laser branching portion 12 for branching into a first sub-beam LB2 and a second sub-beam LB3 for removing burrs generated by the laser beam, and a processing line 4 are formed by irradiating the main beam LB1 while moving relative to the thin film 1. And a beam irradiation unit 13 that irradiates both side portions 3 of the processing line 4 formed on the thin film 1 with the first sub beam LB2 and the second sub beam LB3 while maintaining a predetermined relative position with the main beam LB1. ing.

Here, the predetermined relative position means that the main beam LB1 is an upstream position in the processing direction D, the first sub beam LB2 and the second sub beam LB3 are downstream positions, and the first sub beam LB2 and the second sub beam. LB3 is a position that is line-symmetric with respect to the machining line 4.

The thin film 1 is made of a metal or an insulating film, and is formed on the surface of a base material 2 made of a resin film. After laser processing is performed on the thin film 1, another thin film is further formed thereon.

The laser oscillator 11 is a solid-state laser oscillator and is configured to output a pulse laser.

The laser branching unit 12 performs a laser branching step of branching a laser beam by specifying a pixel that reflects the laser beam L irradiated to a reflective liquid crystal called LCOS (Liquid Crystal On Silicon), which is a two-dimensional array of pixels. Run. The laser beam L irradiated to the LCOS is divided into a pixel that reflects and a pixel that does not reflect depending on the voltage applied to each pixel constituting the LCOS. As a result, the number of laser beams output from the laser branching unit 12 and their relative positions are determined. That is, the laser beam is reflected from the reflecting pixel, and the laser beam is not reflected from the non-reflecting pixel. In the first embodiment, the laser beam splitting process is performed so that the main beam LB1, the first sub beam LB2, and the second sub beam are in predetermined positions.

As described above, each pixel constituting the LCOS is divided into a pixel that reflects and a pixel that does not reflect by controlling the voltage applied to each pixel. That is, when a predetermined voltage is applied to the liquid crystal molecules constituting each pixel, the direction of the liquid crystal molecules changes in the vertical direction, and the laser beam reaches the reflection surface located at the innermost position and is reflected. Conversely, unless a voltage is applied to the liquid crystal molecules constituting each pixel, the direction of the liquid crystal molecules changes in the horizontal direction, and the laser beam does not reach the reflecting surface and is not reflected. Further, if the applied voltage is an intermediate value, the liquid crystal molecules have an intermediate direction, and the degree of reflection of the laser beam can be controlled.

Specifically, a laser reflection pattern that determines a voltage applied to each pixel of the LCOS is set, and the reflection pattern is controlled by instructing the LCOS from a control unit (not shown). Examples of the laser reflection pattern are shown in FIGS. 4 (a) and 4 (b). In the example of the laser reflection pattern in FIG. 4A, among the pixels constituting the LCOS 121, the pixel groups 122, 123, and 124 shown in black apply a high voltage to transmit liquid crystal molecules and reflect them on the reflection surface. Pixel. Then, the main beam LB1 is irradiated by reflection from the pixel group 122 having a large number of pixels, and the first sub beam LB2 and the second sub beam LB3 are emitted from the pixel group 123 and the pixel group 124 having a small number of pixels. Irradiate. 4A shows a processing direction D when a processing line 4 is formed on a thin film 1 to be described later, and the main beam LB1, the first sub beam LB2, and the second sub beam LB3 are: Each predetermined relative position can be set by this laser reflection pattern.

In the example shown in FIG. 4B, among the pixels constituting the LCOS 121, the pixel groups 132, 133, and 134 shown in black are pixels that apply a high voltage to transmit liquid crystal molecules and reflect it on the reflection surface. is there. Then, the main beam LB1 is irradiated by reflection from the pixel group 132 having many pixels and having a substantially round shape, and the first sub beam LB2 is emitted from the pixel group 133 and the pixel group 134 having few pixels and having a cross shape. And the second sub beam LB3 is irradiated. 4B shows a processing direction D when a processing line 4 is formed on the thin film 1 described later, and the main beam LB1, the first sub beam LB2, and the second sub beam LB3 are Each predetermined relative position can be set by this laser reflection pattern.

The main beam LB1, the first sub beam LB2, and the second sub beam LB3 branched by the laser branch unit 12 are input to the beam irradiation unit 13. The beam irradiation unit 13 is composed of a galvanometer mirror and an fθ lens in order to scan the laser beam in the processing direction D in the thin film 1. The beam irradiation unit 13 performs a processing process and a burr removal process. First, a processing step for forming the processing line 4 is performed by irradiating the thin film 1 with the main beam LB1 and relatively moving it. Next, a burr removing process is performed in which the first sub beam LB2 and the second sub beam LB3 are irradiated to both side portions 3 of the processing line 4 formed by irradiating the main beam LB1 on the thin film 1 to remove the burrs B. To do. As described above, since the laser oscillator 11 outputs a pulse laser, the processing line 4 by irradiation with the main beam LB1 can form a dotted line in addition to a straight line or a curve.

The removal of the burr B will be described in detail. The main beam LB1 irradiated to the thin film 1 in the processing step forms a processing line 4 in the processing direction. At this time, irradiation with the main beam LB1 causes energy absorption, and the portion where energy absorption exceeds a certain threshold is removed by transpiration (so-called ablation) (that is, the processing line 4 is formed) and exceeds this threshold. If not removed, burrs B may occur on both side portions 3 of the processed line 4 of the thin film 1. When the burrs B are generated, it becomes a problem when another thin film is formed on the thin film 1 and needs to be removed. The ablation by irradiation with the main beam LB1 occurs because the material becomes high temperature and melts and evaporates (also referred to as vaporization), or the bonds between molecules and atoms constituting the material are instantaneously broken by laser energy absorption. It is thought that this happens. On the other hand, the place where it was not removed without exceeding the threshold value is a state where the material is heated and softened immediately after irradiation with the main beam LB1, or a bond between molecules and atoms is loosened. It is considered that heat and energy diffuse over time and the material solidifies.

Therefore, the deburring process is performed immediately after the processing line 4 is formed, and within the time during which heat generation continues (in other words, before the heat of the both side portions 3 of the heated processing line 4 diffuses, Alternatively, the burr B is removed by irradiating the both side portions 3 of the processing line 4 in the thin film 1 with the first sub-beam LB2 and the second sub-beam LB3 (while the bonds between molecules and atoms are loosened). That is, as shown in the cross-sectional view of FIG. 3, burrs B may occur on both side portions 3 of the processing line 4, so the energy distribution of the first sub beam LB <b> 2 and the second sub beam LB <b> 3 is adjusted, The position of this burr B is irradiated. Further, the first sub-beam LB2 and the second sub-beam LB3 are disposed at the downstream position where the heat generated by the main beam LB1 irradiated upstream in the processing direction D is irradiated within the time remaining on both side portions 3 of the processing line 4. The burr B can be removed smoothly by irradiation. The irradiation positions of the first sub beam LB2 and the second sub beam LB3 are positions that are line symmetric with respect to the processing line 4.

In the first embodiment, the beam irradiation unit 13 is configured to scan the main beam LB1, the first sub beam LB2, and the second sub beam LB3 in the processing direction D. It can be changed. For example, the beam irradiation unit 13 may be configured to move the thin film 1 in the direction opposite to the processing direction D without scanning the main beam LB1, the first sub beam LB2, and the second sub beam LB3. The irradiation unit 13 may scan the main beam LB1, the first sub beam LB2, and the second sub beam LB3, and may also scan in a direction different from the processing direction D. That is, the main beam LB1, the first sub beam LB2, and the second sub beam LB3 may be moved relative to the thin film 1 at least in the processing direction D.

In the first embodiment, the laser branching section 12 is composed of LCOS. However, the present invention is not necessarily limited to this and can be changed as appropriate. For example, a beam homogenizer may be used so that the laser beam L having a Gaussian distribution is branched into three waves, or an optical system such as a half mirror or a beam splitter is used so that the laser beam L is branched into three waves. It may be configured.

Thus, in Example 1, it is a laser processing method which irradiates and processes a thin film with a laser, Comprising: The laser beam output from one laser oscillator is irradiated with the main beam for thin film processing, and irradiation of the said main beam A laser branching process for branching into a first sub-beam and a second sub-beam for removing burrs generated by the process, and processing for forming a processing line by irradiating the main beam while moving relative to the thin film in the processing direction And burrs are removed by irradiating the first sub-beam and the second sub-beam on both sides of the processing line formed in the thin film by the processing step while maintaining a predetermined relative position with respect to the main beam. A deburring step, wherein the predetermined relative position is such that the main beam is an upstream position in the processing direction, and the first sub beam and the second sub beam are downstream positions. According to a laser processing method characterized in that, one laser oscillator can irradiate three types of laser beams: a main beam for thin film processing, a first sub beam for removing burrs, and a second sub beam, Generation of burrs can be suppressed, and laser processing with reduced cost can be realized.

Also, a laser processing apparatus for irradiating a thin film with a laser for processing, a laser oscillator that outputs a laser beam, a main beam for processing the laser beam into a thin film, and removal of burrs caused by irradiation of the main beam A laser branching portion for branching into a first sub-beam and a second sub-beam for use, and forming a processing line by irradiating the main beam while moving the main beam relative to the thin film. A beam irradiating unit that irradiates both side portions of the processing line formed in the thin film with the first sub beam and the second sub beam while maintaining a relative position, and the predetermined relative position is the main beam The laser processing apparatus is characterized in that a beam is at an upstream position in the processing direction, and the first sub beam and the second sub beam are at a downstream position. It is possible to irradiate three types of laser beams: a main beam for thin film processing, a first sub beam for removing burrs, and a second sub beam, which can suppress the generation of burrs and reduce the cost of laser processing. Can be realized.

The second embodiment of the present invention is different from the first embodiment in that the first sub beam and the second sub beam have lower power than the main beam. A second embodiment will be described with reference to FIG. FIG. 5 is a diagram for explaining a laser reflection pattern according to the second embodiment of the present invention.

In the laser branching step executed by the laser branching unit 12 in the second embodiment, the voltage for the pixels reflecting the first sub beam LB2 and the second sub beam LB3 is made lower than the voltage for the pixels reflecting the main beam LB1, The irradiation power is made lower than that of the main beam LB1 by lowering the reflectivity of the first sub beam LB2 and the second sub beam LB3 by LCOS. Thereby, it is possible to prevent new burrs from being generated by the irradiation of the first sub beam LB2 and the second sub beam LB3.

In the example shown in FIG. 5A, a high voltage is applied to the pixel group 122 of the LCOS 121 to irradiate the main beam LB1, and the pixel group 143 and the pixel group 144 of the LCOS 121 have a lower voltage than the pixel group 122. Is applied, and the first sub-beam LB2 and the second sub-beam LB3 having low irradiation power and low irradiation power are irradiated. 5B, a high voltage is applied to the pixel group 132 of the LCOS 121 to irradiate the main beam LB1, and the pixel group 153 and the pixel group 154 of the LCOS 121 are lower than the pixel group 132. By applying a voltage, the first sub beam LB2 and the second sub beam LB3 having low reflectivity and low irradiation power are irradiated.

As described above, when the laser branching unit 12 is configured using a beam homogenizer or an optical system such as a half mirror or a beam splitter, an appropriate attenuator is inserted into one of the branched beams. What is necessary is just to comprise so that the power of 1st sub beam LB2 and 2nd sub beam LB3 may be controlled low with respect to LB1.

As described above, in the second embodiment, the first sub beam and the second sub beam have a power smaller than that of the main beam, so that the first sub beam and the second sub beam are irradiated with the first sub beam and the second sub beam. Can be prevented from occurring.

The third embodiment of the present invention is different from the first and second embodiments in that the powers of the main beam, the first sub beam, and the second sub beam can be individually controlled. A third embodiment will be described with reference to FIG. FIG. 6 is a diagram for explaining a laser reflection pattern in Example 3 of the present invention.

In the laser branching process executed by the laser branching unit 12 in the third embodiment, the voltage applied to each pixel of the LCOS is individually controlled. That is, the voltage for the pixel that reflects the main beam LB1, the voltage for the pixel that reflects the first sub beam LB2, and the voltage for the pixel that reflects the second sub beam LB3 are individually controlled for each pixel, and the main beam LB1, The powers of the first sub beam LB2 and the second sub beam LB3 are controlled to be optimum values. Thereby, a laser beam having an optimum power can be output depending on the material and thickness of the thin film 1.

This will be specifically described. For example, in the example shown in FIG. 6A, a high voltage is applied to the pixel group 222 of the LCOS 121 to irradiate the main beam LB1. Further, the pixel group 223 and the pixel group 224 of the LCOS 121 are configured in a line-symmetrical position with respect to the processing line 4 so as to incline from the outside to the inside with respect to the processing line 4 from upstream to downstream in the processing direction D. The voltage is controlled for each pixel. That is, in the pixel group 223, a high voltage is applied to the pixel group 223A whose irradiation position is located outside the processing line 4, and a low voltage is applied to the pixel group 223C located inside the processing line 4. And an intermediate voltage is applied to the pixel group 223B located between the pixel group 223A and the pixel group 223C. Accordingly, the pixel group 223A has a high reflectance and is irradiated with a large power, and the pixel group 223C has a low reflectance and is irradiated with a small power. Further, the pixel group 223B has an intermediate reflectance and is irradiated with an intermediate power. Then, the thin film 1 is irradiated with the first sub beam LB1 and the second sub beam LB3 having high power, intermediate power, and low power.

In the example shown in FIG. 6B, a high voltage is applied to the pixel group 232 of the LCOS 121 to irradiate the main beam LB1 with a large power. The voltage applied to each pixel group 233 and pixel group 234 is controlled. That is, in the pixel group 233, a high voltage is applied to the pixel group 233A that is located generally outside the processing line 4, and a low voltage is applied to the pixel group 233B that is generally located inside the processing line 4. To do. Further, in the pixel group 234, a high voltage is applied to the pixel group 234A that is located generally outside the processing line 4, and a low voltage is applied to the pixel group 234B that is generally located inside the processing line 4. To do. Accordingly, the pixel groups 233A and 234A have high reflectivity and are irradiated with high power, and the pixel groups 233B and 234B have low reflectivity and are irradiated with low power.

Further, in the example shown in FIG. 6C, the pixel group 242 of the LCOS 121 is irradiated with a low voltage to the pixel group 242B outside the line symmetry with respect to the processing line 4, and a large amount inside the line symmetry is irradiated. A high voltage is applied to the pixel group 242A consisting of these pixels and irradiation is performed with high power. Thereby, the main beam LB1 is irradiated with a large power, but both outer sides are irradiated with a small power. Further, the pixel group 243 and the pixel group 244 are configured symmetrically with respect to the processing line 4 so as to incline from the outside to the inside with respect to the processing line 4 from upstream to downstream in the processing direction D, and a high voltage is applied. It is irradiated with high power. Thereby, the first sub beam LB2 and the second sub beam LB3 are irradiated with a large power.

In the third embodiment, the power is controlled by voltage control for each pixel constituting the LCOS pixel group that irradiates the main beam LB1, the first sub beam LB2, and the second sub beam LB3. It is not necessarily limited to this and can be changed as appropriate. For example, even if the irradiation power is controlled by controlling the reflectance by voltage control for all the pixels constituting any pixel group of the LCOS that irradiates the main beam LB1, the first sub beam LB2, or the second sub beam LB3. Good.

As described above, when the laser branching unit 12 is configured using a beam homogenizer, or an optical system such as a half mirror or a beam splitter, an appropriate attenuator is inserted into each of the branched laser beams. What is necessary is just to comprise so that the power of LB1, 1st sub beam LB2, and 2nd sub beam LB3 may be controlled separately.

As described above, in Example 3, in the laser branching process, the power and power of the main beam, the first sub beam, and the second sub beam can be individually controlled, so that the material and thickness of the target thin film can be controlled. Each can output a laser beam of optimum power.

In addition, the laser branching unit can control the power of the main beam, the first sub beam, and the second sub beam individually, so that the laser beam having the optimum power depending on the material and thickness of the target thin film. Each can output.

The fourth embodiment of the present invention is different from the other embodiments in that the first sub beam and the second sub beam are not in a line-symmetric position with respect to the machining line. Example 4 will be described with reference to FIG. FIG. 7 is a diagram for explaining a laser reflection pattern in Example 4 of the present invention.

In the above-described embodiment, the first sub beam LB2 and the second sub beam LB3 are set at the positions of the burrs B generated on both side portions 3 of the processing line 4, and are in a line symmetric position with respect to the processing line 4. An example of setting is shown. However, when the energy distribution of the first sub beam LB2 and the second sub beam LB3 to be irradiated is not line symmetric, or depending on the height and shape of the generated burr B, the position is not set to be line symmetric with respect to the processing line 4. In some cases, it is preferable to shift the power center and distribution range of the first sub beam LB2 and the second sub beam LB3 to the left / right (also referred to as “in / out”, a direction orthogonal to the processing direction D) or back and forth. .

The fourth embodiment corresponds to such a case. In the example shown in FIG. 7A, a high voltage is applied to the pixel group 322 of the LCOS 121 to irradiate the main beam LB1, and the pixel group 323 and the pixel group 324 of the LCOS 121 have a lower voltage than the pixel group 322. Is applied to irradiate the first sub-beam LB2 and the second sub-beam LB3 with low reflectivity and low irradiation power, and the center of power of the first sub-beam LB2 and the second sub-beam LB3 with respect to the main beam LB1 The distribution range is set to a position shifted left / right or back and forth.

In the example of FIG. 7B, a high voltage is applied to the pixel group 332 of the LCOS 121 to irradiate the main beam LB1, and the pixel group 333 and the pixel group 334 of the LCOS 121 are lower than the pixel group 332. The first sub-beam LB2 and the second sub-beam LB3 with low reflectivity are suppressed by applying a voltage, and the power centers of the first sub-beam LB2 and the second sub-beam LB3 with respect to the main beam LB1 are applied. The distribution range is set to a position shifted left / right or back and forth.

By irradiating the first sub beam LB2 and the second sub beam LB3 to positions that are not line symmetric with respect to the processing line 4, the energy distribution of the first sub beam LB2 and the second sub beam LB3 is not line symmetric. In some cases, and when the height and shape of the generated burr B are not line-symmetric, each beam can be effectively functioned.

The laser processing method and laser processing apparatus in the present invention can be widely used in the field of laser processing.

DESCRIPTION OF SYMBOLS 1: Thin film 2: Base material 3: Processing edge part 11: Laser oscillator 12: Laser branch part 13: Beam irradiation part 100: Laser processing apparatus 121: LCOS 122: Pixel group 123: Pixel group 124: Pixel group 132: Pixel group 133: Pixel group 134: Pixel group 143: Pixel group 144: Pixel group 153: Pixel group 154: Pixel group 222: Pixel group 232: Pixel group 223: Pixel group 223A: Pixel group 223B: Pixel group 223C: Pixel group 224: Pixel group 224A: Pixel group 224B: Pixel group 224C: Pixel group 233: Pixel group 233A: Pixel group 233B: Pixel group 234: Pixel group 234A: Pixel group 234B: Pixel group 242A: Pixel group 242A: Pixel group 242B: Pixel group 243: Pixel 244: Pixel group 322: Pixel group 323; Pixel group 324: Pixel group 332: Pixel group 333: Pixel group 334: Pixel group B: Burr D: Processing direction L: Laser beam LB: Laser beam LB1: Main beam LB2: No. 1 sub beam LB3: 2nd sub beam

Claims (8)

A laser processing method for processing a laser by irradiating a thin film,
A laser branching step of branching a laser beam output from one laser oscillator into a main beam for thin film processing and a first sub beam and a second sub beam for removing burrs generated by irradiation of the main beam;
A processing step of forming a processing line by irradiating the main beam while moving the main beam relative to the thin film in a processing direction;
A burr removing step of removing burrs by irradiating both sides of the processing line formed in the thin film by the processing step with the first sub beam and the second sub beam while maintaining a predetermined relative position with the main beam. And comprising
The laser processing method according to claim 1, wherein the predetermined relative position is an upstream position in the processing direction of the main beam and a downstream position of the first sub beam and the second sub beam. 2. The laser processing method according to claim 1, wherein the predetermined relative position is a position where the first sub beam and the second sub beam are line-symmetric with respect to the processing line.   The laser processing method according to claim 1, wherein the first sub beam and the second sub beam have lower power than the main beam.   4. The laser processing method according to claim 1, wherein in the laser branching step, powers of the main beam, the first sub beam, and the second sub beam can be individually controlled. A laser processing apparatus that irradiates and processes a laser on a thin film,
One laser oscillator that outputs a laser beam,
A laser branching portion for branching the laser beam into a main beam for thin film processing and a first sub-beam and a second sub-beam for removing burrs caused by irradiation of the main beam;
The main beam is irradiated while moving relative to the thin film to form a processing line, and the first sub beam and the second sub beam are applied to the thin film while maintaining a predetermined relative position with the main beam. A beam irradiation unit for irradiating both side portions of the formed processing line,
The laser processing apparatus according to claim 1, wherein the predetermined relative position is an upstream position in the processing direction of the main beam and a downstream position of the first sub beam and the second sub beam.   6. The laser processing apparatus according to claim 5, wherein the predetermined relative position is a position where the first sub beam and the second sub beam are line symmetric with respect to the processing line.   The laser processing apparatus according to claim 5 or 6, wherein the first sub beam and the second sub beam have a smaller power than the main beam. The laser processing apparatus according to claim 5, wherein the laser branching unit is capable of individually controlling powers of the main beam, the first sub beam, and the second sub beam. .

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