JP2018148189A - Method for manufacturing nanocoil type GSR sensor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide such nanocoil technology that a coil pitch is reduced to a nanometer level for achieving higher sensitivity of a GSR sensor based on an ultrafast spin rotation effect.SOLUTION: A film mask method is employed, in which a photomask is adhered flat to a film mask composed of a photosensitive photoresist layer and a film, avoiding diffraction of light, so as to expose the film mask along a fine pattern, and the exposed photosensitive photoresist layer of the film mask is adhered in a substrate groove. Then the film is removed and the remaining photosensitive photoresist layer is subjected to photolithography techniques such as development to fabricate a nanocoil type GSR sensor element having a coil pitch of 0.2 to less than 2 μm. By combining the above GSR sensor element and a pulse-responsive buffer circuit, high sensitivity of a GSR sensor and stabilization of an electronic circuit can be achieved.SELECTED DRAWING: Figure 8

Description

  The present invention relates to a nanocoil technology in which a coil pitch that enables further enhancement of sensitivity, microminiaturization, and low power consumption of a GSR sensor based on the ultra-high speed spin rotation effect is miniaturized to a nano level.

  In recent years, mobile terminals such as mobile phones / smartphones, magnetic detection devices have been used for biomagnetic detection, geomagnetic detection, etc., and further developments have been made to achieve higher sensitivity, lower noise, smaller size, and lower power consumption. It has been broken. A typical example of such a magnetic detection device is a pulse-driven MI sensor that uses an amorphous wire made of a CoFeSiB-based alloy or the like as a magnetic sensor and detects an external magnetic field with a detection coil in which a change in the magnetization of the wire is wound around the wire. And GSR sensors.

  The MI sensor means that when a high frequency current of 20 MHz to 200 MHz is passed through an amorphous wire having a circumferential anisotropic magnetic field on the outermost surface layer of the magnetosensitive wire, its impedance changes greatly according to the external magnetic field due to the skin effect. A sensor that utilizes the magneto-impedance effect (referred to as the MI effect). There are two types of MI sensors. One is an impedance measurement method that directly detects the impedance change of the wire according to the magnetic field strength, and the other is the impedance change as the output voltage of the detection coil wound around the wire. This is a coil voltage measurement method for indirectly measuring. Here, MI is an abbreviation for Magneto-Impedance.

  A GSR sensor applies a pulse current of 0.5 GHz to 4 GHz to an amorphous wire and rotates the spins aligned in the circumferential direction on the outermost surface of the wire all at once at an ultra-high speed of GHz, and the wire axis direction generated at that time This is a sensor that directly detects a change in magnetization of the coil as a detection coil voltage using a microcoil wound around a wire. Here, GSR is an abbreviation for GHz-Spin-Rotation.

Since the output voltage of the coil of the MI sensor or GSR sensor is proportional to the number of turns (N) of the detection coil, in order to increase the number of turns of the detection coil, the coil is refined and the coil pitch (coil width and coil interval) is increased. The problem was how to reduce the size by a microfabrication process. At the same time, it was a serious problem to eliminate the influence of the increase in coil resistance and parasitic capacitance with the increase in the number of turns.
The coil output voltage also depends on the frequency (f) of the pulse current flowing through the wire, but there are technical problems such as eddy current problems and circuits that control high power, making it difficult to increase the frequency of the pulse current. It was. This problem was solved by the discovery of the GSR effect. However, when the microcoil is scaled down to a nanocoil, the problem of electromagnetic induction voltage accompanying the increase from MHz to GHz becomes larger, and further improvement measures can be taken. Necessary.

The MI element is a coil processed by a wet type microfabrication process. In Patent Document 1, a wire having a diameter of 30 μm is embedded in an insulator of a concave groove, and a winding interval (coil pitch) is 50 μm / winding, and a winding inner diameter ( (Coil inner diameter) 66 μm, coil inner diameter / wire diameter = 2.2.
Next, in order to miniaturize the coil, Patent Document 2 describes that a wire having a diameter of 30 μm is adhered to a flat substrate with a liquid resin and the width (coil width) is 15 μm, and the coil inner diameter / wire diameter = 1.4. Has been.

  In the above-described concave coil system (Patent Document 1) and the coil system of the coil system (Patent Document 2) formed convexly on the upper part of the wire, it is difficult to manufacture a coil having a line width of 15 μm or less. Furthermore, a large gap is formed between the mask and the substrate plane, and fine wiring cannot be printed due to light diffraction during exposure, and the coil pitch is limited to 30 μm.

In general, when coil wiring is patterned on a substrate with unevenness by applying a normal dry photolithography technique, a gap is formed between the mask and the substrate due to the unevenness on the substrate surface, and the diffraction phenomenon during exposure causes a line. The width is limited. As a countermeasure, the thickness of the insulating film is further minimized by embedding half of the wire (half of the wire cross section) in the groove on the substrate and exposing the other half with a convex insulating film. As a result, the unevenness can be reduced, and as a result, the coil pitch is miniaturized (Patent Document 3).
By using this concavo-convex coil method, a microcoil having a diameter of 10 μm, a wire width of 2 μm, a coil pitch of 5 μm, and a coil aspect ratio (coil thickness / coil pitch ratio) of 2.6 is realized. Yes. The coil inner diameter / wire diameter is estimated to be 1.9.

When the output voltage of the microcoil is detected by a conventional sample and hold circuit (Non-patent Document 1) used in the MI sensor, the microcoil has a large element coil resistance, so the voltage drop due to IR drop increases.
As for the coil output voltage, even if the coil pitch is reduced and the number of coil turns is increased, an output voltage proportional to the coil winding cannot be taken out. As a countermeasure, a pulse-compatible buffer circuit has been developed, and the sensitivity of the MI sensor has been greatly improved by combining a micro-coil MI element and a pulse-compatible buffer circuit (Patent Document 4).

Next, a high-sensitivity, low-noise, low-power-consumption, miniaturized GSR sensor has been developed using a GSR sensor element with a coil frequency reduced to a pulse frequency of 2 GHz (Patent Document 5).
The magnetic wire has a diameter of 10 μm, an anisotropic magnetic field of 5 G, has a spin arrangement in the circumferential direction, is covered with glass, and has a length of 0.2 mm. The coil has a coil winding number of 48 around the magnetic wire, a coil pitch of 5 μm, a coil wire width of 3 μm, a coil wire thickness of 0.5 μm, a coil inner diameter of 15 μm, and a coil length of 160 μm. The coil resistance is 220Ω, the unit length is 1.4 KΩ, the coil inner diameter / wire diameter is 1.5, and the coil aspect ratio defined by the coil inner diameter / coil pitch is 3.0.

In order to achieve high sensitivity, low noise, miniaturization, or power saving of the GSR sensor, further miniaturization of the detection coil and an increase in the number of coil turns are required. However, since the manufacturing method of the fine coil according to Patent Document 4 and Patent Document 5 is a method of patterning the coil wiring on the uneven substrate by the dry photolithography technique, the miniaturization is not performed due to the diffraction phenomenon at the time of exposure. The coil wire width was 2 μm.
There is a need for a new processing method for producing a nanocoil having a finer nano-level line width from a micro-level by utilizing a micro-processing method with high productivity and a high degree of freedom for a fine coil possessed by photolithography.

In addition, the coil resistance per unit length of the nanocoil produced by ultrafine processing is greatly reduced due to the reduction in the coil wire width and thickness, and the coil resistance is further increased.
Elucidation of the influence on the electronic circuit by this is required.

Japanese Patent No. 3693119 Japanese Patent No. 4835805 Patent No. 5747294 Patent No. 5678358 Japanese Patent No. 5839527

"New magnetic sensors and their applications": Trikeps, Toshio Mohri, 2012

  The present invention has been made in view of such circumstances. A nanocoil having a coil pitch of less than 2 μm of a GSR sensor element is formed, and the output voltage is increased by increasing the number of coil turns (N). ) And inductance (L) are increased to reduce the current (i) flowing through the coil, thereby reducing the output voltage drop (iR drop) and stabilizing the electronic circuit, further increasing the sensitivity of the GSR sensor. The purpose is to achieve low noise, small size, low power consumption, and the like.

  As a result of intensive studies on the above technical problems, the present inventor has previously conducted wiring on a film mask base material having a photosensitive photoresist layer as an upper surface when patterning a coil wire on an uneven substrate by photolithography. By adhering a film mask that has been exposed and transferred to a substrate to an uneven substrate (hereinafter referred to as a film mask method), the influence of the light diffraction phenomenon can be avoided and the coil aspect ratio can be increased, thereby realizing a nanocoil. It led to the invention of the three-dimensional photolithography technology.

  Furthermore, with respect to the problem of increasing the coil resistance and parasitic capacitance associated with the nanocoil, first, the parasitic capacitance generated by the electrostatic potential difference is a solution in which the induced voltage is lost by using a combination coil of a left-handed coil and a right-handed coil. Devised. It has been found that the increase in coil resistance and coil impedance can be solved by applying a pulse-compatible sample hold circuit.

A method for producing a nanocoil having a large coil pitch of less than 2 μm and an aspect ratio of 10 or more by a three-dimensional photolithography technique based on the film mask method will be described below.
When an element composed of a magnetic wire and a nanocoil wound around a magnetic wire is formed on an electrode wiring board, the nanocoil is divided into a concave nanocoil lower part and a planar nanocoil upper part, or a concave nanocoil lower part and convex. Divided into the upper part of the shape nanocoil, each is formed, and both are completed. The uneven-shaped nanocoil can be finely processed by attaching a film mask having a photosensitive photoresist layer along the uneven surface.

Hereinafter, the process of forming the nano coil lower part (concave shape) using a film mask in a groove | channel as an example is demonstrated.
In step (1), a conductive metal is deposited in the groove (referred to as the bottom and side surfaces) of the grooved substrate and on the top surface of the substrate to form a metal vapor deposition film.
In step (2), a film is used as a film mask substrate material, and a film mask base material composed of a photosensitive photoresist layer is formed on the upper surface thereof. Next, the film mask is formed by exposing the fine pattern while avoiding the light diffraction phenomenon with the film mask base material and the plane of the photomask in close contact with each other. For pattern transfer, a finer pattern can be transferred as light having a shorter emission wavelength is used.
In step (3), the photosensitive photoresist layer and the substrate having a groove are opposed to each other, and the film mask is attached to the substrate so as to be in close contact with the groove. As a method of pasting, it is stuck in the groove by the electrostatic action of the film mask, or it is pasted by applying negative pressure by removing the air in the groove, which is a gap between the film mask and the substrate, by vacuuming. .
In step (4), the film mask substrate material is removed, leaving only the exposed photosensitive photoresist layer on the substrate. In addition, although the film mask board | substrate material is removed by process (4), you may remove before sticking of process (3).
In step (5), the photosensitive photoresist layer in close contact with the substrate groove is developed, and the photosensitive photoresist layer left on the substrate is solidified to form a three-dimensional mask.
In step (6), the deposited metal film is etched, and then the photosensitive photoresist layer is peeled off to form the lower part of the nanocoil.
By the film mask method described above, coil wiring with a coil pitch of less than 2 μm can be formed on the uneven surface on the substrate.

  The nano coil wound around the magnetic wire is manufactured by first forming the lower part of the nano coil in the substrate groove by the film mask method, installing the magnetic wire along the groove, filling the insulating resin to the substrate surface, and fixing the magnetic wire Then, the upper part of the insulating resin and the substrate surface are made flat, and the planar nanocoil upper part is easily formed by photolithography. At the same time, the nanocoil is formed by forming a nanocoil joint that joins both ends of the nanocoil lower part and the nanocoil upper part. It is desirable to use a wire previously coated with an insulating film as the magnetic wire.

  A nanocoil type GSR sensor element using nanocoils produced by a film mask method has a coil pitch of less than 2 μm and a coil aspect ratio of 10 or more. The coil resistance is 5 kΩ or more per 1 mm coil length. Further, the inner diameter of the nanocoil is set to 2.5 times or less the diameter of the magnetic wire.

  Since the coil resistance of the nanocoil of the GSR sensor element is as large as 5 kΩ or more per 1 mm of the coil length, it is detected by the sample and hold circuit via the pulse corresponding buffer circuit. The coil resistance of the microcoil is 2 kΩ / mm or less, whereas that of the nanocoil is large, the current is reduced, the operation of the buffer circuit is more stable, and the voltage drop of the coil voltage is reduced to 10% or less.

For the problem of increased parasitic capacitance of nanocoils, install a pair of right-handed and left-handed nanocoils or multiple pairs of unit coils on the substrate so that current flows in the same direction in left-handed and right-handed nanocoils. Further, two magnetic wire energizing electrodes and a magnetic wire terminal are connected. In addition, the two nanocoil voltage detection electrodes and the unit coil terminal are connected so that the output voltage of the right-handed nanocoil and the left-handed nanocoil is proportional to the external magnetic field when the pulse current is applied to the magnetic wire. To do. At this time, the induced voltage due to the parasitic capacitance disappears. Further, the voltage generated by the wiring loop formed by the coil and the electronic circuit on the substrate can be removed by forming the wiring cross structure.
Of course, as for the parasitic capacitance, a right-handed coil or a left-handed unidirectional coil can be adopted as the nanocoil of the GSR element at a level where the circuit operates and the generated induced voltage is practically acceptable.

  After the photosensitive photoresist and photomask are exposed to each other on a plane, a nanocoil with a GSR sensor element coil pitch of less than 2 μm is formed by film masking, which is applied to a concave shape (such as a groove) or a convex shape to produce a fine coil. Then, the output voltage is increased by increasing the number of coil turns (N), the coil resistance is greatly increased, and the current flowing through the coil is decreased, thereby stabilizing the electronic circuit. The GSR sensor can be further improved in sensitivity, reduced noise, reduced size, reduced power consumption, and the like.

3 is a conceptual diagram illustrating a plane of a nanocoil type GSR sensor element of Example 1. FIG. 3 is a conceptual diagram of a cross section taken along line A-A ′ of the element in Example 1. FIG. 2 is a wiring diagram of the nanocoil type GSR sensor in Example 1. FIG. It is a conceptual diagram which shows preparation of the (1) metal vapor deposition film | membrane in the formation process of the nano coil lower part in Example 1. FIG. It is a conceptual diagram which shows preparation of the (2) film mask base material and film mask in the formation process of the nano coil lower part in Example 1. FIG. It is a conceptual diagram which shows affixing of (3) film mask in the formation process of the nano coil lower part in Example 1. FIG. It is a conceptual diagram which closely_contact | adheres the (4) film mask in the formation process of the nano coil lower part in Example 1. FIG. It is a conceptual diagram which shows the (5) three-dimensional mask in the formation process of the nano coil lower part in Example 1. FIG. It is a conceptual diagram of the nano coil lower part after peeling of the (6) photosensitive photoresist film | membrane in the formation process of the nano coil lower part in Example 1. FIG. 1 is a block diagram of an electronic circuit in Embodiment 1. FIG.

(Embodiment)
A method for manufacturing a nanocoil type GSR sensor element according to an embodiment of the present invention includes:
On the electrode wiring board, a magnetic wire as a magnetic sensing element, a magnetic wire terminal for energization, a nanocoil wound around the magnetic wire, a nanocoil terminal at an end thereof, and an electrode for connecting the terminal and an external integrated circuit are provided. The nanocoil has a nanocoil attached to the lower surface of the groove of the electrode wiring board for fixing the magnetic wire, and a nanocoil attached to the upper portion of the magnetic wire bonded and fixed with an insulating resin in the groove. In the manufacturing method of a nanocoil type GSR sensor element comprising a nanocoil joint that joins the upper part and the nanocoil lower part and the nanocoil upper part,
The nanocoil avoids the influence of light diffraction phenomenon when forming a wiring pattern in the groove, and forms the lower part of the nanocoil;
When the magnetic wire is not glass-coated, the lower part of the nanocoil is thinly covered with the insulating resin, and the magnetic wire is disposed on the lower part of the nanocoil. When the magnetic wire is glass-coated, Placing the magnetic wire on the bottom of the nanocoil;
The magnetic wire is disposed on the lower portion of the nanocoil, and the upper portion of the magnetic wire is thinly covered with the insulating resin, or the magnetic wire is fixed to the groove with the insulating resin in a state of being thinly covered. Process,
The step of forming a planar upper portion of the nanocoil on the upper portion of the magnetic wire and the step of joining the magnetic wire terminal and the electrode, the nanocoil terminal and the electrode, respectively.
The step of forming the lower part of the nanocoil includes:
(1) A step of depositing a conductive metal on the electrode wiring board having the groove to produce a metal vapor deposition film;
(2) A film mask base material in which a photosensitive photoresist layer is bonded on the top surface of a film mask substrate material is manufactured, and a flat photomask is prepared by baking a wiring drawing below the nanocoil, and then the photomask A plane adhesion to the photosensitive photoresist layer of the film mask base material, and then exposing and baking the wiring drawing to produce a film mask;
(3) After the photosensitive photoresist side of the film mask is adhered and adhered to the surface of the groove covered with the metal vapor deposition film, the film mask is developed and then solidified to form the wiring Forming a three-dimensional mask to which the drawing is transferred;
(4) a step of etching the exposed portion of the metal vapor-deposited film except for the covering portion by the three-dimensional mask, and then peeling off the solidified photosensitive photoresist of the three-dimensional mask to form the lower portion of the nanocoil; ,
It is characterized by comprising.

  After exposure and transfer to a film mask base material consisting of a photosensitive photoresist layer and a film mask substrate material, the film mask is attached so that the photoresist layer is in close contact with the metal vapor deposition film in the groove. Since there is no phenomenon, a three-dimensionally patterned nanocoil lower portion can be formed regardless of the groove depth.

In this embodiment, the magnetic wire is fixed to a groove having a depth larger than the magnetic wire diameter, the lower part of the nanocoil is formed on the surface of the groove, the upper part of the nanocoil is formed flat, and both the lower part of the nanocoil and the upper part of the nanocoil are formed. Are coupled at the nanocoil junction.
The shape of the groove is a rectangular shape having a square or rectangular cross section, an inverted trapezoidal shape in which the groove upper portion is open with respect to the groove bottom surface, and a V shape. Moreover, the groove bottom surface may be rounded.

  By forming the lower part of the nanocoil on the surface of the groove (concave groove) of the electrode wiring board and fixing the entire magnetic wire in the groove having a depth larger than the diameter of the magnetic wire, the subsequent formation of the upper part of the nanocoil is made planar. Can do. Making the upper part of the nanocoil planar makes it easy to form a joint between the lower part of the nanocoil and the upper part of the nanocoil, and the upper part of the planar nanocoil can be easily formed by a normal photolithography technique, leading to improved productivity. Further, the ratio of the coil inner diameter to the magnetic wire diameter can be made smaller than 2.5 times.

The GSR sensor element with nanocoil manufactured by the manufacturing method of this embodiment is
The coil pitch of the nanocoil is 0.2 μm to less than 2 μm, the coil wire width is less than 0.1 to 1 μm, the coil wire thickness is less than 0.1 to 0.5 μm, and is defined by the ratio of the coil inner diameter to the coil pitch. The aspect ratio is 10 or more, and the coil resistance is 5 kΩ / mm or more per unit length.

By miniaturizing the coil pitch of the nanocoil to 0.2 μm to less than 2 μm, the number of turns is greatly increased, the output voltage is increased, and high sensitivity is obtained. Further, by setting the coil aspect ratio to 10 or more, it can be applied to a magnetic wire having a diameter of 1 μm to 15 μm.
In addition, the coil resistance (R) is greatly increased as a synergistic effect of increasing the number of coil turns in combination with the miniaturization of the coil cross-sectional area due to the miniaturization of the coil pitch. As the coil resistance increases, the current (i) becomes smaller and approaches zero, and the voltage drop of the coil voltage approaches zero. At the same time, the heat generation (i ² ) in the circuit is also zero, so that no energy loss occurs in the buffer circuit constituting the electronic circuit, and the electronic circuit is stabilized. It was confirmed that the operation became faster and more stable as the input impedance of the buffer circuit increased.

  In the present embodiment, a pair or a plurality of pairs of a right-handed nanocoil detecting element and a left-handed nanocoil are installed on the electrode wiring board, and the magnetic wire energization is performed so that a current in the same direction flows through the left-handed nanocoil and the right-handed nanocoil. When the magnetic wire is energized with a pulse current, the output voltage of the right-handed and left-handed nanocoils is proportional to the external magnetic field. When the output voltage has the same sign and the external magnetic field is zero, connection is made so that the output voltage generated by the parasitic capacitance has a different sign and disappears.

  With this wiring structure, the output voltage of the coil is added, and the induced voltage due to the electrostatic potential difference is canceled and disappears.

Furthermore, the terminal for energizing the magnetic wire is formed by wire-joining the magnetic wire electrode and the upper portion of the magnetic wire exposed by removing at least the insulating resin on the upper portion of the magnetic wire with vapor deposition metal. Alternatively, when the magnetic wire is a glass-coated magnetic wire, the magnetic wire upper part and the magnetic wire electrode exposed by removing the glass coating together with the insulating resin on the upper part of the magnetic wire are wire-bonded by vapor deposition metal.
By this wire bonding, the electrical connection between the magnetic wire and the electrode can be stabilized and the magnetic wire can be energized reliably.

  In addition, the GSR sensor element with nanocoil manufactured according to the present embodiment, a means for supplying a gigahertz pulse current to the magnetic wire, and the voltage output of the nanocoil generated when the pulse current is supplied are sample-held via a pulse-compatible buffer circuit. In the nanocoil type GSR sensor comprising means for converting the voltage into a voltage proportional to the external magnetic field in the circuit, the voltage drop of the nanocoil is 10% or less of the output voltage of the nanocoil.

  The GSR sensor element with nanocoil comprising an electronic circuit composed of a buffer circuit increases the number of turns of the nanocoil by 5 times or more by reducing the coil pitch of the GSR sensor element to 10 μm or less to less than 2 μm and 1/5, and the wire of the nanocoil The coil resistance is increased several times or more by synergizing the width reduction and the thinning. This large coil resistance greatly reduces the output current, stabilizes the electronic circuit, and provides low noise. In addition, the voltage drop of the nanocoil is reduced to 10% or less of the output voltage of the nanocoil.

Example 1
First, an element manufactured by a method for manufacturing a nanocoil type GSR sensor element (hereinafter referred to as element) will be described. FIG. 1 is a plan view of the element, FIG. 2 is a cross-sectional view taken along line AA ′ of the element 10, and FIG. 3 is a wiring diagram of the nanocoil of the element 10 (element 101). This is illustrated in FIG.
Next, a GSR sensor with a nanocoil in which the element 10 and an electronic circuit with a pulse-compatible buffer circuit (FIG. 10) are combined will be described.

First, the structure of the element will be described with reference to FIGS.
The element 10 includes a magnetic wire 30 covered with an insulating material (glass) which is a magnetic sensitive material on an electrode wiring substrate (hereinafter referred to as a substrate) 20, a nanocoil 40 wound around the magnetic wire 30, and two magnetic wire terminals 31. And four magnetic wire electrodes 32 and two nanocoil terminals 41 and four nanocoil electrodes 42 and four electrodes.
The nanocoil 40 includes a nanocoil lower portion 401, a nanocoil upper portion 402, and a nanocoil joint portion 403 that couples both. The nanocoil lower portion 401 is attached to the surface of the groove 21 of the substrate 20 that fixes the magnetic wire 30, and the nanocoil upper portion 402 is attached to the upper portion of the magnetic wire 30 that is bonded and fixed in the groove 21 with the liquid insulating resin 35. The bonding portion 403 is on the same plane as the coil upper portion 402 on the flat surface of the substrate 20.

  The substrate 20 has a length of 0.2 mm, a width of 0.2 mm, and a height of 0.2 mm. An inverted trapezoidal groove 21 having a bottom width of 20 μm, an upper width of 32 μm, and a depth of 13 μm was processed in the substrate 20 in the longitudinal direction of the substrate 20.

The magnetic wire 30 is a CoFeSiB amorphous alloy glass-coated wire having a diameter of 10 μm and a thickness of 1 μm or less. The crystal structure is a high permeability magnetic wire having an amorphous structure and a weak permeability of 10 ⁻⁶ and a relative permeability of 10,000. A tensile stress is applied to the wire to generate a 5 G magnetic anisotropy Kθ in the axial and circumferential directions, and a circumferential surface magnetic domain having a circumferential spin arrangement and a central core magnetic domain having an axial spin arrangement. The two-phase magnetic domain structure was formed. The thickness d of the surface magnetic domain was 1 μm or less.

  The intensity of the pulse current was set to 100 mA or more, and a sufficiently large circumferential magnetic field Hθ of 60 G was generated on the wire surface, and the θ-spinned spins of the surface magnetic domain were simultaneously rotated in the circumferential direction by the force of the magnetic field. At the same time, a pulse duration of 2n (nanoseconds) is secured and the 90 ° domain wall existing at the interface between the core magnetic domain and the surface magnetic domain penetrates into the core central part to reduce the core magnetic domain and magnetize in the circumferential direction. The magnetization history was erased by saturation or near magnetization. This pulse magnetic field annealing process was performed for each measurement, and the hysteresis characteristic was removed from the output.

  The pulse frequency was 2 GHz, the skin depth p of the current was 0.12 μm, and the thickness of the circumferential surface magnetic domain was about 1 μm. The length of the magnetic wire having the above characteristics was 0.2 mm, and the measurement range ± Hm was adjusted to 40G.

  The number of turns of the nanocoil 40 was 250, the coil pitch was 0.6 μm (600 nm), the magnetic wire 30 was 200 μm long, and the nanocoil 40 was 150 μm long. The coil inner diameter was 20.5 μm and the coil thickness was 14.0 μm. The coil aspect ratio is 23. The coil wire width was 0.3 μm and the coil wire thickness was 0.15 μm. The coil resistance was adjusted to 12 kΩ per 1 mm coil length.

Next, a method for manufacturing the nanocoil 40 will be described with reference to FIGS.
First, the three-dimensional pattern of the nanocoil lower portion 401 and the nanocoil bonding portion 403 formed of the grooves 21 are formed. The process will be described with reference to FIGS.
In step (1), a conductive metal is deposited on the bottom and side surfaces of the groove 21 extending in the longitudinal direction of the substrate 20 and the top surface of the substrate 20 to produce a metal deposited film 400 having a thickness of 0.15 μm (FIG. 4). .
In step (2), a film mask base material 50 formed by forming a film mask substrate material 502 having a thickness of 2 μm and a photosensitive photoresist layer 501 having a thickness of 0.4 μm thereon is produced. The film mask substrate material 502 is a water-soluble polyvinyl alcohol film. A photomask 62 is placed on the photosensitive photoresist layer 501 and a fine pattern corresponding to the lower part of the nanocoil is exposed by ultraviolet light 60 (FIG. 5).
In step (3), the film mask 50 is placed so that the photosensitive photoresist layer 501 is in contact with the metal thin film 400 of the substrate 20 (FIG. 6). Next, the film mask 50 is made to enter and adhere to the inside of the groove 21 of the substrate 20 (FIG. 7). Polyvinyl alcohol is dissolved and removed by immersing in water, and the photosensitive photoresist layer 501 is developed and solidified to produce a three-dimensional mask 503 (FIG. 8).
In step (4), the metal vapor deposition film 400 is etched, and the solidified three-dimensional mask 503 of the photosensitive resist layer is peeled off to form the nanocoil lower portion 401 and the nanocoil bonding portion 403 (FIG. 9).

  The magnetic wire 30 coated with glass is disposed on the nanocoil lower portion 402 formed in the groove 21 of the substrate 20, and the magnetic wire 30 is fixed in the groove 21 with the upper portion of the magnetic wire 30 covered thinly with the insulating resin 35. To do. The upper surface of the insulating resin 35, the upper part of the magnetic wire 30, and the surface of the substrate 20 are made flat.

An upper part 402 of the nanocoil having a planar pattern is formed on the magnetic wire 30 by photolithography. The nanocoil upper portion 402 is formed in a crank shape with a metal deposition film having a thickness of 0.15 μm, and is electrically coupled to the nanocoil lower portion 401 through the nanocoil bonding portion 403 to form the spiral nanocoil 40.
A nanocoil terminal 41 is formed at the end of the nanocoil 40 by metal vapor deposition. The joint between the nanocoil terminal 41 and the nanocoil electrode 42 is joined by metal deposition.

The structure of the end portion of the magnetic wire 30 will be described.
The insulating resin 35 on the upper end of the glass-coated magnetic wire 30 fixed to the substrate 20 by the insulating resin 35 is removed, and then the glass is removed by sputtering with CF ₄ gas. Metal is vapor-deposited on the surface of the metal end portion of the magnetic wire 30 exposed in this manner to form a magnetic wire terminal 32, and a joint portion between the magnetic wire terminal 31 and the magnetic wire electrode 32 is also formed by metal vapor deposition and coupled.

Finally, the element 101 describing the coil wiring diagram for the element 10 will be described with reference to FIG.
Two magnetic wires 301 and 301 are installed along the substrate groove 221 of the substrate 201, and a pair of left-handed nanocoil 405L and right-handed nanocoil 405R are provided on the magnetic wire 301 and a pair of left-handed nanocoil 406L and right-handed nanocoil are provided on the magnetic wire 302. 406R is installed.

  In order to allow a pulse current in the opposite direction to flow through both magnetic wires, the magnetic wire input electrode 321 for conducting the magnetic wire of the left magnetic wire in the figure, the magnetic wire plus terminal 311+, the magnetic wire minus terminal 311- The wire connection portion 313, the magnetic wire plus terminal 312+ of the right magnetic wire, the magnetic wire minus terminal 312−, and the magnetic wire ground electrode 322 are connected.

  The nanocoil is connected from the nanocoil output terminal 421 to the nanocoil terminals 411 and 412 of the left-handed left handed nanocoil 406L, sequentially connected to the nanocoil terminals 413, 414, 415, 416, 417 and 418, and finally the nanocoil ground terminal. 422.

  When the nano-coil voltage is applied to the magnetic wire with a pulse current, the output voltage due to the external magnetic field generates a common-mode voltage between right-handed nanocoils and left-handed nanocoils. A voltage is generated. The nanocoils in the same winding direction are forward-joined, and the nanocoils in different directions are reverse-joined, and all the voltages generated in the four nanocoils are added.

  The induced voltage due to the electrostatic potential difference is canceled in total because the nanocoil 405L and the nanocoil 406R are terminal-connected in the opposite direction to the current, and the nanocoil 405R and 406L are connected in the same direction as the current.

  The induced voltage directly generated in the nanocoil by the circumferential magnetic field is canceled by the terminal connection of the two nanocoils 406L and the nanocoil 405L in which current flows in opposite directions, and further by the terminal connection of the two nanocoils 406R and the nanocoil 405R in which current flows in the opposite direction. Canceled and eventually all the voltages generated in the four nanocoils are canceled.

The induced voltage caused by the wiring loop is canceled by the two anti-symmetric loops. Two loops consisting of a loop formed by nanocoil terminals 413, 414, 415, and 416 and a loop formed by 411, 412, 417, 418 detect a magnetic field in the same direction but have opposite directions of the nanocoil current. So it will be canceled.
All the induced voltages due to the above three factors disappear.

The number of turns of the nanocoil and the nanocoil resistance of the nanocoil type GSR sensor element were set to 6 kΩ at 500 times, and the resistance of the magnetic wire was adjusted to 8Ω. The element 101 was connected to a pulse-compatible buffer circuit 73 of the electronic circuit 70 shown in FIG. 11 to produce a nano-coiled GSR sensor, and the element was evaluated.
The configuration of the electronic circuit 70 is shown in FIG. It consists of a pulse transmitter 71, an element 101, a pulse corresponding buffer circuit 74, a sample hold circuit 75, an AD conversion circuit, and a digital signal processing circuit.
A pulse current having a conversion frequency of 2 GHz is applied to the element from the pulse transmitter 71, and the nanocoil voltage generated at that time is detected by the pulse corresponding buffer circuit 74. Although this nanocoil resistance is very large, the parasitic capacitance of the nanocoil is extremely limited, so only a very small current flows through the nanocoil, and the voltage drop is very small at 3.8% of the nanocoil output voltage. The circuit is stable.

  Both the input side circuit 73 and the output side circuit 75 of the pulse corresponding buffer circuit 74 have high impedance, and the concept of a normal buffer circuit, that is, the input side circuit 73 is high impedance and the output side circuit 74 is greatly different from low impedance. . However, a pulse-compatible buffer that functions as a buffer circuit only for a moment when the electronic current flows through the nanocoil due to the pulse current of the magnetic wire and the electronic switch 76 is opened or closed, that is, for a time interval of nanoseconds or less when the output side capacitor 77 is charged. The nanocoil voltage is sampled and held in the capacitor 77 without being attenuated by the circuit 74 and is output through the amplifier 78.

  Thereafter, the signal is converted into a 14-bit digital signal by the AD conversion circuit, transferred to the digital signal processing circuit, subjected to predetermined processing, converted into a magnetic field H, and the value is output. The digital signal processing circuit includes a memory unit that stores direct signal data, and a memory unit that stores a signal correction program and initial setting values. The output was averaged over two values.

Regarding the performance of the nanocoil type GSR sensor having the above configuration, the magnetic signal noise is 10 times from 0.2 mG to 0.02 mG, and the sensitivity is 10 times from 0.4 mG to 0.04 mG, compared to the microcoil GSR sensor. And has improved significantly. The measurement range is ± 50 G, the linearity is ± 0.1%, the hysteresis is 2 mG, the temperature drift is 0.2 mG / ° C., the current consumption is 0.1 mA when the measurement interval is 200 Hz, and the element size is 0. The sensor size is 3 mm × width 0.2 mm and 1 × 1 × 0.6 mm.
From a comprehensive point of view, the performance index has been improved 160 times from the MI sensor (product AMI306) to the microcoil GSR sensor, and further 10 times has been improved by the GSR sensor with nanocoil of the present invention. Become. That is, the improvement effect from the MI sensor to the GSR sensor with nanocoils is 1600 times.

The GSR sensor with a nanocoil based on the ultra-high speed spin rotation phenomenon of the present invention is further excellent in the ability to detect a minute magnetic field, and can provide high-speed measurement, high sensitivity, low current consumption, and a high-quality magnetic signal.
Therefore, it can be applied to three-dimensional azimuth meters and real-time three-dimensional azimuth meters by measuring minute geomagnetism such as electronic compass and magnetic gyroscope, medical sensor that measures biomagnetism, micro-sized and applied inside the living body, high speed It is expected to be used in a wide range of applications, such as magnetic mapping applications that make use of measurement capabilities, and industrial magnetic sensors with expanded measurement ranges.

10: Nanocoil type GSR sensor element in Example 1 (plan view)
20: Electrode wiring board, 30: Magnetic wire, 31: Magnetic wire terminal, 32: Magnetic wire electrode, 40: Nanocoil, 41: Nanocoil terminal, 42: Nanocoil electrode

10: GSR sensor element with nanocoil in Example 1 ('cross-sectional view along AA')
20: substrate, 21: substrate groove, 30: magnetic wire, 35: insulating resin, 401: nanocoil lower part, 402: nanocoil upper part, 403: nanocoil connection part

101: GSR sensor element with nanocoils of Example 1 (coil wiring diagram)
201: substrate, 211: substrate groove for left magnetic wire, 222: substrate groove for right magnetic wire 301: left magnetic wire, 302: right magnetic wire, 321: magnetic wire input electrode, 322: magnetic wire Ground electrode, 311+: Magnetic wire plus terminal of left magnetic wire, 311-: Magnetic wire minus terminal of left magnetic wire, 312+: Magnetic wire plus terminal of right magnetic wire, 312-: Magnetic wire minus terminal of right magnetic wire, 313 : Connection between the magnetic wire negative terminal of the left magnetic wire and the positive terminal of the right magnetic wire,
405L: Left-handed nanocoil, 405R: Right-handed nanocoil, 406L: Left-handed nanocoil, 406R: Right-handed nanocoil, 411-418: Nanocoil terminal

  20: Substrate in nanocoil lower formation, 21: Substrate groove in nanocoil lower formation, 400: Metal vapor deposition film, 50: Film mask base material (after exposure, referred to as film mask), 501: Photosensitive photoresist layer, 502: Film mask substrate material, 503: three-dimensional mask, 60: ultraviolet light, 62: photomask

70: electronic circuit, 71: pulse oscillator, 72: timing adjustment circuit, 73: input side circuit, 74: pulse-compatible buffer circuit, 75: output side circuit (sample hold circuit), 76: electronic switch, 77: hold capacitor 78: Amplifier

3 is a conceptual diagram illustrating a plane of a nanocoil type GSR sensor element of Example 1. FIG. 3 is a conceptual diagram of a cross section taken along line A-A ′ of the element in Example 1. FIG. 2 is a wiring diagram of the nanocoil type GSR sensor in Example 1. FIG. It is a conceptual diagram which shows preparation of the (1) metal vapor deposition film | membrane in the formation process of the nano coil lower part in Example 1. FIG. It is a conceptual diagram which shows preparation of the (2) film mask base material and film mask in the formation process of the nano coil lower part in Example 1. FIG. It is a conceptual diagram which shows affixing of (3) film mask in the formation process of the nano coil lower part in Example 1. FIG. It is a conceptual diagram which closely_contact | adheres the (4) film mask in the formation process of the nano coil lower part in Example 1. FIG. It is a conceptual diagram which shows the (5) three-dimensional mask in the formation process of the nano coil lower part in Example 1. FIG. It is a conceptual diagram of the nano coil lower part after peeling of the (6) photosensitive photoresist film | membrane in the formation process of the nano coil lower part in Example 1. FIG. 1 is a block diagram of an electronic circuit in Embodiment 1. FIG. 6 is a wiring diagram of a GSR sensor with nanocoils in Example 2. FIG.

  The present invention relates to a nanocoil technology in which a coil pitch that enables further enhancement of sensitivity, microminiaturization, and low power consumption of a GSR sensor based on the ultra-high speed spin rotation effect is miniaturized to a nano level.

  In recent years, mobile terminals such as mobile phones / smartphones, magnetic detection devices have been used for biomagnetic detection, geomagnetic detection, etc., and further developments have been made to achieve higher sensitivity, lower noise, smaller size, and lower power consumption. It has been broken. A typical example of such a magnetic detection device is a pulse-driven MI sensor that uses an amorphous wire made of a CoFeSiB-based alloy or the like as a magnetic sensor and detects an external magnetic field with a detection coil in which a change in the magnetization of the wire is wound around the wire. And GSR sensors.

  The MI sensor means that when a high frequency current of 20 MHz to 200 MHz is passed through an amorphous wire having a circumferential anisotropic magnetic field on the outermost surface layer of the magnetosensitive wire, its impedance changes greatly according to the external magnetic field due to the skin effect. A sensor that utilizes the magneto-impedance effect (referred to as the MI effect). There are two types of MI sensors. One is an impedance measurement method that directly detects the impedance change of the wire according to the magnetic field strength, and the other is the impedance change as the output voltage of the detection coil wound around the wire. This is a coil voltage measurement method for indirectly measuring. Here, MI is an abbreviation for Magneto-Impedance.

  A GSR sensor applies a pulse current of 0.5 GHz to 4 GHz to an amorphous wire and rotates the spins aligned in the circumferential direction on the outermost surface of the wire all at once at an ultra-high speed of GHz, and the wire axis direction generated at that time This is a sensor that directly detects a change in magnetization of the coil as a detection coil voltage using a microcoil wound around a wire. Here, GSR is an abbreviation for GHz-Spin-Rotation.

Since the output voltage of the coil of the MI sensor or GSR sensor is proportional to the number of turns (N) of the detection coil, in order to increase the number of turns of the detection coil, the coil is refined and the coil pitch (coil width and coil interval) is increased. The problem was how to reduce the size by a microfabrication process. At the same time, it was a serious problem to remove the influence of the increase in coil resistance and parasitic capacitance with the increase in the number of turns.
The coil output voltage also depends on the frequency (f) of the pulse current flowing through the wire, but there are technical problems such as eddy current problems and circuits that control high power, making it difficult to increase the frequency of the pulse current. It was. This problem was solved by the discovery of the GSR effect. However, when the microcoil is scaled down to a nanocoil, the problem of electromagnetic induction voltage accompanying the increase from MHz to GHz becomes larger, and further improvement measures can be taken. Necessary.

The MI element is a coil processed by a wet type microfabrication process. In Patent Document 1, a wire having a diameter of 30 μm is embedded in an insulator of a concave groove, and a winding interval (coil pitch) is 50 μm / winding, and a winding inner diameter ( (Coil inner diameter) 66 μm, coil inner diameter / wire diameter = 2.2.
Next, in order to miniaturize the coil, Patent Document 2 describes that a wire having a diameter of 30 μm is adhered to a flat substrate with a liquid resin and the width (coil width) is 15 μm, and the coil inner diameter / wire diameter = 1.4. Has been.

  In the above-described concave coil system (Patent Document 1) and the coil system of the coil system (Patent Document 2) formed convexly on the upper part of the wire, it is difficult to manufacture a coil having a line width of 15 μm or less. Furthermore, a large gap is formed between the mask and the substrate plane, and fine wiring cannot be printed due to light diffraction during exposure, and the coil pitch is limited to 30 μm.

In general, when coil wiring is patterned on a substrate with unevenness by applying a normal dry photolithography technique, a gap is formed between the mask and the substrate due to the unevenness on the substrate surface, and the diffraction phenomenon during exposure causes a line. The width is limited. As a countermeasure, the thickness of the insulating film is further minimized by embedding half of the wire (half of the wire cross section) in the groove on the substrate and exposing the other half with a convex insulating film. As a result, the unevenness can be reduced, and as a result, the coil pitch is miniaturized (Patent Document 3).
By using this concavo-convex coil method, a microcoil having a diameter of 10 μm, a wire width of 2 μm, a coil pitch of 5 μm, and a coil aspect ratio (coil thickness / coil pitch ratio) of 2.6 is realized. Yes. The coil inner diameter / wire diameter is estimated to be 1.9.

When the output voltage of the microcoil is detected by a conventional sample and hold circuit (Non-patent Document 1) used in the MI sensor, the microcoil has a large element coil resistance, so the voltage drop due to IR drop increases.
As for the coil output voltage, even if the coil pitch is reduced and the number of coil turns is increased, an output voltage proportional to the coil winding cannot be taken out. As a countermeasure, a pulse-compatible buffer circuit has been developed, and the sensitivity of the MI sensor has been greatly improved by combining a micro-coil MI element and a pulse-compatible buffer circuit (Patent Document 4).

Next, a high-sensitivity, low-noise, low-power-consumption, miniaturized GSR sensor has been developed using a GSR sensor element with a coil frequency reduced to a pulse frequency of 2 GHz (Patent Document 5).
The magnetic wire has a diameter of 10 μm, an anisotropic magnetic field of 5 G, has a spin arrangement in the circumferential direction, is covered with glass, and has a length of 0.2 mm. The coil has a coil winding number of 48 around the magnetic wire, a coil pitch of 5 μm, a coil wire width of 3 μm, a coil wire thickness of 0.5 μm, a coil inner diameter of 15 μm, and a coil length of 160 μm. The coil resistance is 220Ω, the unit length is 1.4 KΩ, the coil inner diameter / wire diameter is 1.5, and the coil aspect ratio defined by the coil inner diameter / coil pitch is 3.0.

In order to achieve high sensitivity, low noise, miniaturization, or power saving of the GSR sensor, further miniaturization of the detection coil and an increase in the number of coil turns are required. However, since the manufacturing method of the fine coil according to Patent Document 4 and Patent Document 5 is a method of patterning the coil wiring on the uneven substrate by the dry photolithography technique, the miniaturization is not performed due to the diffraction phenomenon at the time of exposure. The coil wire width was 2 μm.
There is a need for a new processing method for producing a nanocoil having a finer nano-level line width from a micro-level by utilizing a micro-processing method with high productivity and a high degree of freedom for a fine coil possessed by photolithography.

In addition, the coil resistance per unit length of the nanocoil produced by ultrafine processing is greatly reduced due to the reduction in the coil wire width and thickness, and the coil resistance is further increased.
Elucidation of the influence on the electronic circuit by this is required.

Japanese Patent No. 3693119 Japanese Patent No. 4835805 Patent No. 5747294 Patent No. 5678358 Japanese Patent No. 5839527

"New magnetic sensors and their applications": Trikeps, Toshio Mohri, 2012

  The present invention has been made in view of such circumstances. A nanocoil having a coil pitch of less than 2 μm of a GSR sensor element is formed, and the output voltage is increased by increasing the number of coil turns (N). ) And inductance (L) are increased to reduce the current (i) flowing through the coil, thereby reducing the output voltage drop (iR drop) and stabilizing the electronic circuit, further increasing the sensitivity of the GSR sensor. The purpose is to achieve low noise, small size, low power consumption, and the like.

  As a result of intensive studies on the above technical problems, the present inventor has previously conducted wiring on a film mask base material having a photosensitive photoresist layer as an upper surface when patterning a coil wire on an uneven substrate by photolithography. By adhering a film mask that has been exposed and transferred to a substrate to an uneven substrate (hereinafter referred to as a film mask method), the influence of the light diffraction phenomenon can be avoided and the coil aspect ratio can be increased, thereby realizing a nanocoil. It led to the invention of the three-dimensional photolithography technology.

  Furthermore, with respect to the problem of increasing the coil resistance and parasitic capacitance associated with the nanocoil, first, the parasitic capacitance generated by the electrostatic potential difference is a solution in which the induced voltage is lost by using a combination coil of a left-handed coil and a right-handed coil. Devised. It has been found that the increase in coil resistance and coil impedance can be solved by applying a pulse-compatible sample hold circuit.

A method for producing a nanocoil having a large coil pitch of less than 2 μm and an aspect ratio of 10 or more by a three-dimensional photolithography technique based on the film mask method will be described below.
When an element composed of a magnetic wire and a nanocoil wound around a magnetic wire is formed on an electrode wiring board, the nanocoil is divided into a concave nanocoil lower part and a planar nanocoil upper part, or a concave nanocoil lower part and convex. Divided into the upper part of the shape nanocoil, each is formed, and both are completed. The uneven-shaped nanocoil can be finely processed by attaching a film mask having a photosensitive photoresist layer along the uneven surface.

Hereinafter, the process of forming the nano coil lower part (concave shape) using a film mask in a groove | channel as an example is demonstrated.
In step (1), a conductive metal is deposited in the groove (referred to as the bottom and side surfaces) of the grooved substrate and on the top surface of the substrate to form a metal vapor deposition film.
In step (2), a film is used as a film mask substrate material, and a film mask base material composed of a photosensitive photoresist layer is formed on the upper surface thereof. Next, the film mask is formed by exposing the fine pattern while avoiding the light diffraction phenomenon with the film mask base material and the plane of the photomask in close contact with each other. For pattern transfer, a finer pattern can be transferred as light having a shorter emission wavelength is used.
In step (3), the photosensitive photoresist layer and the substrate having a groove are opposed to each other, and the film mask is attached to the substrate so as to be in close contact with the groove. As a method of pasting, it is stuck in the groove by the electrostatic action of the film mask, or it is pasted by applying negative pressure by removing the air in the groove, which is a gap between the film mask and the substrate, by vacuuming. .
In step (4), the film mask substrate material is removed, leaving only the exposed photosensitive photoresist layer on the substrate. In addition, although the film mask board | substrate material is removed by process (4), you may remove before sticking of process (3).
In step (5), the photosensitive photoresist layer in close contact with the substrate groove is developed, and the photosensitive photoresist layer left on the substrate is solidified to form a three-dimensional mask.
In step (6), the deposited metal film is etched, and then the photosensitive photoresist layer is peeled off to form the lower part of the nanocoil.
By the film mask method described above, coil wiring with a coil pitch of less than 2 μm can be formed on the uneven surface on the substrate.

  The nano coil wound around the magnetic wire is manufactured by first forming the lower part of the nano coil in the substrate groove by the film mask method, installing the magnetic wire along the groove, filling the insulating resin to the substrate surface, and fixing the magnetic wire Then, the upper part of the insulating resin and the substrate surface are made flat, and the planar nanocoil upper part is easily formed by photolithography. At the same time, the nanocoil is formed by forming a nanocoil joint that joins both ends of the nanocoil lower part and the nanocoil upper part. It is desirable to use a wire previously coated with an insulating film as the magnetic wire.

  A nanocoil type GSR sensor element using nanocoils produced by a film mask method has a coil pitch of less than 2 μm and a coil aspect ratio of 10 or more. The coil resistance is 5 kΩ or more per 1 mm coil length. Further, the inner diameter of the nanocoil is set to 2.5 times or less the diameter of the magnetic wire.

Since the coil resistance of the nanocoil of the GSR sensor element is as large as 5 kΩ or more per 1 mm of the coil length, it is detected by the sample and hold circuit via the pulse corresponding buffer circuit. The coil resistance of the microcoil is 2 kΩ / mm or less, whereas that of the nanocoil is large, the current is reduced, the operation of the buffer circuit is more stable, and the voltage drop of the coil voltage is reduced to 10% or less.

For the problem of increased parasitic capacitance of nanocoils, install a pair of right-handed and left-handed nanocoils or multiple pairs of unit coils on the substrate so that current flows in the same direction in left-handed and right-handed nanocoils. Further, two magnetic wire energizing electrodes and a magnetic wire terminal are connected. In addition, the two nanocoil voltage detection electrodes and the unit coil terminal are connected so that the output voltage of the right-handed nanocoil and the left-handed nanocoil is proportional to the external magnetic field when the pulse current is applied to the magnetic wire. To do. At this time, the induced voltage due to the parasitic capacitance disappears. Further, the voltage generated by the wiring loop formed by the coil and the electronic circuit on the substrate can be removed by forming the wiring cross structure.
Of course, as for the parasitic capacitance, a right-handed coil or a left-handed unidirectional coil can be adopted as the nanocoil of the GSR element at a level where the circuit operates and the generated induced voltage is practically acceptable.

  After the photosensitive photoresist and photomask are exposed to each other on a flat surface, a nanocoil with a GSR sensor element coil pitch of less than 2 μm is formed by a film mask method of attaching a concave shape (groove, etc.) or a convex shape to produce a fine coil Then, the output voltage is increased by increasing the number of coil turns (N), the coil resistance is greatly increased, and the current flowing through the coil is decreased, thereby stabilizing the electronic circuit. The GSR sensor can be further improved in sensitivity, reduced noise, reduced size, reduced power consumption, and the like.

3 is a conceptual diagram illustrating a plane of a nanocoil type GSR sensor element of Example 1. FIG. 3 is a conceptual diagram of a cross section taken along line A-A ′ of the element in Example 1. FIG. 2 is a wiring diagram of the nanocoil type GSR sensor in Example 1. FIG. It is a conceptual diagram which shows preparation of the (1) metal vapor deposition film | membrane in the formation process of the nano coil lower part in Example 1. FIG. It is a conceptual diagram which shows preparation of the (2) film mask base material and film mask in the formation process of the nano coil lower part in Example 1. FIG. It is a conceptual diagram which shows affixing of (3) film mask in the formation process of the nano coil lower part in Example 1. FIG. It is a conceptual diagram which closely_contact | adheres the (4) film mask in the formation process of the nano coil lower part in Example 1. FIG. It is a conceptual diagram which shows the (5) three-dimensional mask in the formation process of the nano coil lower part in Example 1. FIG. It is a conceptual diagram of the nano coil lower part after peeling of the (6) photosensitive photoresist film | membrane in the formation process of the nano coil lower part in Example 1. FIG. 1 is a block diagram of an electronic circuit in Embodiment 1. FIG.

(Embodiment)
A method for manufacturing a nanocoil type GSR sensor element according to an embodiment of the present invention includes:
On the electrode wiring board, a magnetic wire as a magnetic sensing element, a magnetic wire terminal for energization, a nanocoil wound around the magnetic wire, a nanocoil terminal at an end thereof, and an electrode for connecting the terminal and an external integrated circuit are provided. The nanocoil has a nanocoil attached to the lower surface of the groove of the electrode wiring board for fixing the magnetic wire, and a nanocoil attached to the upper portion of the magnetic wire bonded and fixed with an insulating resin in the groove. In the manufacturing method of a nanocoil type GSR sensor element comprising a nanocoil joint that joins the upper part and the nanocoil lower part and the nanocoil upper part,
The nanocoil avoids the influence of light diffraction phenomenon when forming a wiring pattern in the groove, and forms the lower part of the nanocoil;
When the magnetic wire is not glass-coated, the lower part of the nanocoil is thinly covered with the insulating resin, and the magnetic wire is disposed on the lower part of the nanocoil. When the magnetic wire is glass-coated, Placing the magnetic wire on the bottom of the nanocoil;
The magnetic wire is disposed on the lower portion of the nanocoil, and the upper portion of the magnetic wire is thinly covered with the insulating resin, or the magnetic wire is fixed to the groove with the insulating resin in a state of being thinly covered. Process,
The step of forming a planar upper portion of the nanocoil on the upper portion of the magnetic wire and the step of joining the magnetic wire terminal and the electrode, the nanocoil terminal and the electrode, respectively.
The step of forming the lower part of the nanocoil includes:
(1) A step of depositing a conductive metal on the electrode wiring substrate having the groove to produce a metal vapor deposition film;
(2) A film mask base material in which a photosensitive photoresist layer is bonded on the top surface of a film mask substrate material is manufactured, and a flat photomask is prepared by baking a wiring drawing below the nanocoil, and then the photomask A plane adhesion to the photosensitive photoresist layer of the film mask base material, and then exposing and baking the wiring drawing to produce a film mask;
(3) After the photosensitive photoresist side of the film mask is adhered and adhered to the surface of the groove covered with the metal vapor deposition film, the film mask is developed and then solidified to form the wiring Forming a three-dimensional mask to which the drawing is transferred;
(4) etching the exposed portion of the metal deposition film except for the covering portion by the three-dimensional mask, and then peeling the solidified photosensitive photoresist of the three-dimensional mask to form the lower portion of the nanocoil; ,
It is characterized by comprising.

  After exposure and transfer to a film mask base material consisting of a photosensitive photoresist layer and a film mask substrate material, the film mask is attached so that the photoresist layer is in close contact with the metal vapor deposition film in the groove. Since there is no phenomenon, a three-dimensionally patterned nanocoil lower portion can be formed regardless of the groove depth.

In this embodiment, the magnetic wire is fixed to a groove having a depth larger than the magnetic wire diameter, the lower part of the nanocoil is formed on the surface of the groove, the upper part of the nanocoil is formed flat, and both the lower part of the nanocoil and the upper part of the nanocoil are formed. Are coupled at the nanocoil junction.
The shape of the groove includes a rectangular shape having a square or rectangular cross section, an inverted trapezoidal shape in which the upper portion of the groove is open to the groove bottom surface, and a V shape. Moreover, the groove bottom surface may be rounded.

By forming the lower part of the nanocoil on the surface of the groove (concave groove) of the electrode wiring board and fixing the entire magnetic wire in the groove having a depth larger than the diameter of the magnetic wire, the subsequent formation of the upper part of the nanocoil is made planar. Can do. Making the upper part of the nanocoil planar makes it easy to form a joint between the lower part of the nanocoil and the upper part of the nanocoil, and the upper part of the planar nanocoil can be easily formed by a normal photolithography technique, leading to improved productivity. Further, the ratio of the coil inner diameter to the magnetic wire diameter can be made smaller than 2.5 times.

The nanocoil type GSR sensor element manufactured by the manufacturing method of this embodiment is
The coil pitch of the nanocoil is 0.2 μm to less than 2 μm, the coil wire width is less than 0.1 to 1 μm, the coil wire thickness is less than 0.1 to 0.5 μm, and is defined by the ratio of the coil inner diameter to the coil pitch. The aspect ratio is 10 or more, and the coil resistance is 5 kΩ / mm or more per unit length.

By miniaturizing the coil pitch of the nanocoil to 0.2 μm to less than 2 μm, the number of turns is greatly increased, the output voltage is increased, and high sensitivity is obtained. Further, by setting the coil aspect ratio to 10 or more, it can be applied to a magnetic wire having a diameter of 1 μm to 15 μm.
In addition, the coil resistance (R) is greatly increased as a synergistic effect of increasing the number of coil turns in combination with the miniaturization of the coil cross-sectional area due to the miniaturization of the coil pitch. As the coil resistance increases, the current (i) becomes smaller and approaches zero, and the voltage drop of the coil voltage approaches zero. At the same time, the heat generation (i ² ) in the circuit is also zero, so that no energy loss occurs in the buffer circuit constituting the electronic circuit, and the electronic circuit is stabilized. It was confirmed that the operation became faster and more stable as the input impedance of the buffer circuit increased.

In the present embodiment, a pair or a plurality of pairs of a right-handed nanocoil detecting element and a left-handed nanocoil are installed on the electrode wiring board, and the magnetic wire energization is performed so that a current in the same direction flows through the left-handed nanocoil and the right-handed nanocoil. When the magnetic wire is energized with a pulse current, the output voltage of the right-handed and left-handed nanocoils is proportional to the external magnetic field. When the output voltage has the same sign and the external magnetic field is zero, connection is made so that the output voltage generated by the parasitic capacitance has a different sign and disappears.

With this wiring structure, the output voltage of the coil is added, and the induced voltage due to the electrostatic potential difference is canceled and disappears.

Furthermore, the terminal for energizing the magnetic wire is formed by wire-joining the magnetic wire electrode and the upper portion of the magnetic wire exposed by removing at least the insulating resin on the upper portion of the magnetic wire with vapor deposition metal. Alternatively, when the magnetic wire is a glass-coated magnetic wire, the magnetic wire upper part and the magnetic wire electrode exposed by removing the glass coating together with the insulating resin on the upper part of the magnetic wire are wire-bonded by vapor deposition metal.
By this wire bonding, the electrical connection between the magnetic wire and the electrode can be stabilized and the magnetic wire can be energized reliably.

In addition, the nano-coil type GSR sensor element manufactured according to the present embodiment, a means for supplying a gigahertz pulse current to the magnetic wire, and a nano-coil voltage output generated when the pulse current is applied are sample-held via a pulse-compatible buffer circuit. In the nanocoil type GSR sensor comprising means for converting the voltage into a voltage proportional to the external magnetic field in the circuit, the voltage drop of the nanocoil is 10% or less of the output voltage of the nanocoil.

A nanocoil type GSR sensor element having an electronic circuit comprising a buffer circuit increases the number of turns of the nanocoil by 5 times or more by reducing the coil pitch of the GSR sensor element to 10 μm or less to less than 2 μm and 1/5, and the wire of the nanocoil The coil resistance is increased several times or more by synergizing the width reduction and the thinning. This large coil resistance greatly reduces the output current, stabilizes the electronic circuit, and provides low noise. In addition, the voltage drop of the nanocoil is reduced to 10% or less of the output voltage of the nanocoil.

Example 1
First, an element manufactured by a method for manufacturing a nanocoil type GSR sensor element (hereinafter referred to as element) will be described. FIG. 1 is a plan view of the element, FIG. 2 is a cross-sectional view taken along line AA ′ of the element 10, and FIG. 3 is a wiring diagram of the nanocoil of the element 10 (element 101). This is illustrated in FIG.
Next, a nanocoil type GSR sensor in which the element 10 and an electronic circuit with a pulse-compatible buffer circuit (FIG. 10) are combined will be described.

First, the structure of the element will be described with reference to FIGS.
The element 10 includes a magnetic wire 30 covered with an insulating material (glass) which is a magnetic sensitive material on an electrode wiring substrate (hereinafter referred to as a substrate) 20, a nanocoil 40 wound around the magnetic wire 30, and two magnetic wire terminals 31. And four magnetic wire electrodes 32 and two nanocoil terminals 41 and four nanocoil electrodes 42 and four electrodes.
The nanocoil 40 includes a nanocoil lower portion 401, a nanocoil upper portion 402, and a nanocoil joint portion 403 that couples both. The nanocoil lower portion 401 is attached to the surface of the groove 21 of the substrate 20 that fixes the magnetic wire 30, and the nanocoil upper portion 402 is attached to the upper portion of the magnetic wire 30 that is bonded and fixed in the groove 21 with the liquid insulating resin 35. The bonding portion 403 is on the same plane as the nanocoil upper portion 402 on the flat surface of the substrate 20.

The substrate 20 has a length of 0.2 mm, a width of 0.2 mm, and a height of 0.2 mm. An inverted trapezoidal groove 21 having a bottom width of 20 μm, an upper width of 32 μm, and a depth of 13 μm was processed in the substrate 20 in the longitudinal direction of the substrate 20.

The magnetic wire 30 is a CoFeSiB amorphous alloy glass-coated wire having a diameter of 10 μm and a thickness of 1 μm or less. The crystal structure is a high permeability magnetic wire having an amorphous structure and a weak permeability of 10 ⁻⁶ and a relative permeability of 10,000. A tensile stress is applied to the wire to generate a 5 G magnetic anisotropy Kθ in the axial and circumferential directions, and a circumferential surface magnetic domain having a circumferential spin arrangement and a central core magnetic domain having an axial spin arrangement. The two-phase magnetic domain structure was formed. The thickness d of the surface magnetic domain was 1 μm or less.

The intensity of the pulse current was set to 100 mA or more, and a sufficiently large circumferential magnetic field Hθ of 60 G was generated on the wire surface, and the θ-spinned spins of the surface magnetic domain were simultaneously rotated in the circumferential direction by the force of the magnetic field. At the same time, a pulse duration of 2n (nanoseconds) is secured and the 90 ° domain wall existing at the interface between the core magnetic domain and the surface magnetic domain penetrates into the core central part to reduce the core magnetic domain and magnetize in the circumferential direction. The magnetization history was erased by saturation or near magnetization. This pulse magnetic field annealing process was performed for each measurement, and the hysteresis characteristic was removed from the output.

The pulse frequency was 2 GHz, the skin depth p of the current was 0.12 μm, and the thickness of the circumferential surface magnetic domain was about 1 μm. The length of the magnetic wire having the above characteristics was 0.2 mm, and the measurement range ± Hm was adjusted to 40G.

The number of turns of the nanocoil 40 was 250, the coil pitch was 0.6 μm (600 nm), the length of the magnetic wire 30 was 200 μm, and the length of the nanocoil 40 was 150 μm. The coil inner diameter was 20.5 μm and the coil thickness was 14.0 μm. The coil aspect ratio is 23. The coil wire width was 0.3 μm and the coil wire thickness was 0.15 μm. The coil resistance was adjusted to 12 kΩ per 1 mm coil length.

Next, a method for manufacturing the nanocoil 40 will be described with reference to FIGS.
First, the three-dimensional pattern of the nanocoil lower portion 401 and the nanocoil bonding portion 403 formed of the grooves 21 are formed. The process will be described with reference to FIGS.
In step (1), a conductive metal is deposited on the bottom and side surfaces of the groove 21 extending in the longitudinal direction of the substrate 20 and the top surface of the substrate 20 to produce a metal deposited film 400 having a thickness of 0.15 μm (FIG. 4). .
In step (2), a film mask base material 50 formed by forming a film mask substrate material 502 having a thickness of 2 μm and a photosensitive photoresist layer 501 having a thickness of 0.4 μm thereon is produced. The film mask substrate material 502 is a water-soluble polyvinyl alcohol film. A photomask 62 is placed on the photosensitive photoresist layer 501 and a fine pattern corresponding to the lower part of the nanocoil is exposed by ultraviolet light 60 (FIG. 5).
In step (3), the film mask 50 is placed so that the photosensitive photoresist layer 501 is in contact with the metal thin film 400 of the substrate 20 (FIG. 6). Next, the film mask 50 is inserted into the groove 21 of the substrate 20 by electrostatic action and is brought into close contact (FIG. 7). Polyvinyl alcohol is dissolved and removed by immersing it in water, and the photosensitive photoresist layer 501 is developed and solidified to produce a three-dimensional mask 503 (FIG. 8).
In step (4), the metal vapor deposition film 400 is etched, and the solidified three-dimensional mask 503 of the photosensitive resist layer is peeled off to form the nanocoil lower portion 401 and the nanocoil bonding portion 403 (FIG. 9).

The magnetic wire 30 coated with glass is disposed on the nanocoil lower portion 401 formed in the groove 21 of the substrate 20, and the magnetic wire 30 is fixed in the groove 21 with the upper portion of the magnetic wire 30 covered thinly with the insulating resin 35. To do. The upper surface of the insulating resin 35, the upper part of the magnetic wire 30, and the surface of the substrate 20 are made flat.

An upper part 402 of the nanocoil having a planar pattern is formed on the magnetic wire 30 by photolithography. The nanocoil upper portion 402 is formed in a crank shape with a metal deposition film having a thickness of 0.15 μm, and is electrically coupled to the nanocoil lower portion 401 through the nanocoil bonding portion 403 to form the spiral nanocoil 40.
A nanocoil terminal 41 is formed at the end of the nanocoil 40 by metal vapor deposition. The joint between the nanocoil terminal 41 and the nanocoil electrode 42 is joined by metal deposition.

The structure of the end portion of the magnetic wire 30 will be described.
The insulating resin 35 on the upper end of the glass-coated magnetic wire 30 fixed to the substrate 20 by the insulating resin 35 is removed, and then the glass is removed by sputtering with CF ₄ gas. Metal is vapor-deposited on the surface of the metal end portion of the magnetic wire 30 exposed in this manner to form a magnetic wire terminal 32, and a joint portion between the magnetic wire terminal 31 and the magnetic wire electrode 32 is also formed by metal vapor deposition and coupled.

Finally, the element 101 describing the coil wiring diagram for the element 10 will be described with reference to FIG.
Two magnetic wires 301 and 301 are installed along the substrate groove 221 of the substrate 201, and a pair of left-handed nanocoil 405L and right-handed nanocoil 405R are provided on the magnetic wire 301 and a pair of left-handed nanocoil 406L and right-handed nanocoil are provided on the magnetic wire 302. 406R is installed.

In order to allow a pulse current in the opposite direction to flow through both magnetic wires, the magnetic wire input electrode 321 for conducting the magnetic wire of the left magnetic wire in the figure, the magnetic wire plus terminal 311+, the magnetic wire minus terminal 311- The wire connection portion 313, the magnetic wire plus terminal 312+ of the right magnetic wire, the magnetic wire minus terminal 312−, and the magnetic wire ground electrode 322 are connected.

The nanocoil is connected from the nanocoil output terminal 421 to the nanocoil terminals 411 and 412 of the left-handed left handed nanocoil 406L, sequentially connected to the nanocoil terminals 413, 414, 415, 416, 417 and 418, and finally the nanocoil ground terminal. 422.

When the nano-coil voltage is applied to the magnetic wire with a pulse current, the output voltage due to the external magnetic field generates a common-mode voltage between right-handed nanocoils and left-handed nanocoils. A voltage is generated. The nanocoils in the same winding direction are forward-joined, and the nanocoils in different directions are reverse-joined, and all the voltages generated in the four nanocoils are added.

The induced voltage due to the electrostatic potential difference is canceled in total because the nanocoil 405L and the nanocoil 406R are terminal-connected in the opposite direction to the current, and the nanocoil 405R and 406L are connected in the same direction as the current.

The induced voltage directly generated in the nanocoil by the circumferential magnetic field is canceled by the terminal connection of the two nanocoils 406L and the nanocoil 405L in which current flows in opposite directions, and further by the terminal connection of the two nanocoils 406R and the nanocoil 405R in which current flows in the opposite direction. Canceled and eventually all the voltages generated in the four nanocoils are canceled.

The induced voltage caused by the wiring loop is canceled by the two anti-symmetric loops. Two loops consisting of a loop formed by nanocoil terminals 413, 414, 415, and 416 and a loop formed by 411, 412, 417, 418 detect a magnetic field in the same direction but have opposite directions of the nanocoil current. So it will be canceled.
All the induced voltages due to the above three factors disappear.

The number of turns of the nanocoil and the nanocoil resistance of the nanocoil type GSR sensor element were set to 6 kΩ at 500 times, and the resistance of the magnetic wire was adjusted to 8Ω. This element 101 was connected to a pulse-compatible buffer circuit 73 of the electronic circuit 70 shown in FIG. 10 to produce a GSR sensor with a nanocoil, and the element was evaluated.
The configuration of the electronic circuit 70 is shown in FIG. It consists of a pulse transmitter 71, an element 101, a pulse corresponding buffer circuit 74, a sample hold circuit 75, an AD conversion circuit, and a digital signal processing circuit.
A pulse current having a conversion frequency of 2 GHz is applied to the element from the pulse transmitter 71, and the nanocoil voltage generated at that time is detected by the pulse corresponding buffer circuit 74. Although this nanocoil resistance is very large, the parasitic capacitance of the nanocoil is extremely limited, so only a very small current flows through the nanocoil, and the voltage drop is very small at 3.8% of the nanocoil output voltage. The circuit is stable.

Both the input side circuit 73 and the output side circuit 75 of the pulse corresponding buffer circuit 74 have high impedance, and the concept of a normal buffer circuit, that is, the input side circuit 73 is high impedance and the output side circuit 74 is greatly different from low impedance. . However, a pulse-compatible buffer that functions as a buffer circuit only for a moment when the electronic current flows through the nanocoil due to the pulse current of the magnetic wire and the electronic switch 76 is opened or closed, that is, for a time interval of nanoseconds or less when the output side capacitor 77 is charged. The nanocoil voltage is sampled and held in the capacitor 77 without being attenuated by the circuit 74 and is output through the amplifier 78.

Thereafter, the signal is converted into a 14-bit digital signal by the AD conversion circuit, transferred to the digital signal processing circuit, subjected to predetermined processing, converted into a magnetic field H, and the value is output. The digital signal processing circuit includes a memory unit that stores direct signal data, and a memory unit that stores a signal correction program and initial setting values. The output was averaged over two values.

Regarding the performance of the nanocoil type GSR sensor having the above configuration, the magnetic signal noise is 10 times from 0.2 mG to 0.02 mG, and the sensitivity is 10 times from 0.4 mG to 0.04 mG, compared to the microcoil GSR sensor. And has improved significantly. The measurement range is ± 50 G, the linearity is ± 0.1%, the hysteresis is 2 mG, the temperature drift is 0.2 mG / ° C., the current consumption is 0.1 mA when the measurement interval is 200 Hz, and the element size is 0. The sensor size is 3 mm × width 0.2 mm and 1 × 1 × 0.6 mm.
From a comprehensive point of view, the performance index has been improved 160 times from the MI sensor (product AMI306) to the microcoil GSR sensor, and further 10 times has been improved by the GSR sensor with nanocoil of the present invention. Become. That is, the improvement effect from the MI sensor to the nanocoil type GSR sensor is 1600 times.

The nanocoil type GSR sensor based on the ultra-high speed spin rotation phenomenon of the present invention is further excellent in the ability to detect a minute magnetic field, and can provide high-speed measurement, high sensitivity, low current consumption, and a high-quality magnetic signal.
Therefore, it can be applied to three-dimensional azimuth meters and real-time three-dimensional azimuth meters by measuring minute geomagnetism such as electronic compass and magnetic gyroscope, medical sensor that measures biomagnetism, micro-sized and applied inside the living body, high speed It is expected to be used in a wide range of applications, such as magnetic mapping applications that make use of measurement capabilities, and industrial magnetic sensors with expanded measurement ranges.

10: Nanocoil type GSR sensor element in Example 1 (plan view)
20: Electrode wiring board, 30: Magnetic wire, 31: Magnetic wire terminal, 32: Magnetic wire electrode, 40: Nanocoil, 41: Nanocoil terminal, 42: Nanocoil electrode

10: Nanocoil type GSR sensor element in Example 1 ('cross-sectional view along AA')
20: substrate, 21: substrate groove, 30: magnetic wire, 35: insulating resin, 401: nanocoil lower part, 402: nanocoil upper part, 403: nanocoil connection part

101: Nanocoil type GSR sensor element of Example 1 (coil wiring diagram)
201: substrate, 211: substrate groove for left magnetic wire, 222: substrate groove for right magnetic wire 301: left magnetic wire, 302: right magnetic wire, 321: magnetic wire input electrode, 322: magnetic wire Ground electrode, 311+: Magnetic wire plus terminal of left magnetic wire, 311-: Magnetic wire minus terminal of left magnetic wire, 312+: Magnetic wire plus terminal of right magnetic wire, 312-: Magnetic wire minus terminal of right magnetic wire, 313 : Connection between the magnetic wire negative terminal of the left magnetic wire and the positive terminal of the right magnetic wire,
405L: Left-handed nanocoil, 405R: Right-handed nanocoil, 406L: Left-handed nanocoil, 406R: Right-handed nanocoil, 411-418: Nanocoil terminals

  20: Substrate in nanocoil lower formation, 21: Substrate groove in nanocoil lower formation, 400: Metal vapor deposition film, 50: Film mask base material (after exposure, referred to as film mask), 501: Photosensitive photoresist layer, 502: Film mask substrate material, 503: three-dimensional mask, 60: ultraviolet light, 62: photomask

70: electronic circuit, 71: pulse oscillator, 72: timing adjustment circuit, 73: input side circuit, 74: pulse-compatible buffer circuit, 75: output side circuit (sample hold circuit), 76: electronic switch, 77: hold capacitor 78: Amplifier

Claims (1)

On the electrode wiring board, a magnetic wire as a magnetic sensing element, a magnetic wire terminal for energization, a nanocoil wound around the magnetic wire, a nanocoil terminal at an end thereof, and an electrode for connecting the terminal and an external integrated circuit are provided. The nanocoil has a nanocoil attached to the lower surface of the groove of the electrode wiring board for fixing the magnetic wire, and a nanocoil attached to the upper portion of the magnetic wire bonded and fixed with an insulating resin in the groove. In the manufacturing method of a nanocoil type GSR sensor element comprising a nanocoil joint that joins the upper part and the nanocoil lower part and the nanocoil upper part,
The nanocoil avoids the influence of light diffraction phenomenon when forming a wiring pattern in the groove, and forms the lower part of the nanocoil;
When the magnetic wire is not glass-coated, the lower part of the nanocoil is thinly covered with the insulating resin, and the magnetic wire is disposed on the lower part of the nanocoil. When the magnetic wire is glass-coated, Placing the magnetic wire on the bottom of the nanocoil;
The magnetic wire is disposed on the lower portion of the nanocoil, and the upper portion of the magnetic wire is thinly covered with the insulating resin, or the magnetic wire is fixed to the groove with the insulating resin in a state of being thinly covered. Process,
The step of forming a planar upper portion of the nanocoil on the upper portion of the magnetic wire and the step of joining the magnetic wire terminal and the electrode, the nanocoil terminal and the electrode, respectively.
The step of forming the lower part of the nanocoil includes:
(1) A step of depositing a conductive metal on the electrode wiring board having the groove to produce a metal vapor deposition film;
(2) A film mask base material in which a photosensitive photoresist layer is formed on a film mask substrate material is produced, a flat photomask is produced by printing a wiring drawing below the nanocoil, and then the photomask is applied to the film A step of making a film mask by making a flat contact with the photosensitive photoresist layer of the mask base material, and then exposing and baking the wiring drawing;
(3) After the photosensitive photoresist side of the film mask is adhered and adhered to the surface of the groove covered with the metal vapor deposition film, the film mask is developed, and then solidified. Forming a three-dimensional mask to which the wiring drawing is transferred;
(4) A step of etching the exposed portion of the metal vapor-deposited film except for a covering portion by the three-dimensional mask portion, and then peeling off the solidified photosensitive photoresist of the three-dimensional mask to form the lower portion of the nanocoil. When,
A method for producing a nanocoil type GSR sensor element, comprising:

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