JP2018133016A - ニューラルネットワークシステム - Google Patents
ニューラルネットワークシステム Download PDFInfo
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- JP2018133016A JP2018133016A JP2017027585A JP2017027585A JP2018133016A JP 2018133016 A JP2018133016 A JP 2018133016A JP 2017027585 A JP2017027585 A JP 2017027585A JP 2017027585 A JP2017027585 A JP 2017027585A JP 2018133016 A JP2018133016 A JP 2018133016A
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- 238000013528 artificial neural network Methods 0.000 title claims abstract description 132
- 230000015654 memory Effects 0.000 claims abstract description 371
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 230000006870 function Effects 0.000 claims description 128
- 238000012545 processing Methods 0.000 claims description 58
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000004044 response Effects 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 278
- 210000002569 neuron Anatomy 0.000 description 40
- 239000003990 capacitor Substances 0.000 description 35
- 238000010586 diagram Methods 0.000 description 34
- 238000004364 calculation method Methods 0.000 description 26
- 230000008859 change Effects 0.000 description 21
- 238000000034 method Methods 0.000 description 20
- 238000007667 floating Methods 0.000 description 11
- 230000014509 gene expression Effects 0.000 description 11
- 238000004891 communication Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000013527 convolutional neural network Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 3
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 3
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 3
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000013135 deep learning Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 238000010801 machine learning Methods 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 101100018694 Rattus norvegicus Il24 gene Proteins 0.000 description 2
- 230000036772 blood pressure Effects 0.000 description 2
- 210000004556 brain Anatomy 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 102000003898 interleukin-24 Human genes 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000000946 synaptic effect Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- Logic Circuits (AREA)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017027585A JP2018133016A (ja) | 2017-02-17 | 2017-02-17 | ニューラルネットワークシステム |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017027585A JP2018133016A (ja) | 2017-02-17 | 2017-02-17 | ニューラルネットワークシステム |
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| Publication Number | Publication Date |
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| JP2018133016A true JP2018133016A (ja) | 2018-08-23 |
| JP2018133016A5 JP2018133016A5 (enrdf_load_stackoverflow) | 2020-04-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2017027585A Withdrawn JP2018133016A (ja) | 2017-02-17 | 2017-02-17 | ニューラルネットワークシステム |
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| JP (1) | JP2018133016A (enrdf_load_stackoverflow) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020118051A1 (en) * | 2018-12-06 | 2020-06-11 | MIPS Tech, LLC | Neural network processing using specialized data representation |
| US20210150319A1 (en) * | 2019-11-15 | 2021-05-20 | Samsung Electronics Co., Ltd. | Neuromorphic device based on memory |
| JP2021103521A (ja) * | 2019-12-24 | 2021-07-15 | 財團法人工業技術研究院Ｉｎｄｕｓｔｒｉａｌ Ｔｅｃｈｎｏｌｏｇｙ Ｒｅｓｅａｒｃｈ Ｉｎｓｔｉｔｕｔｅ | ニューラルネットワーク演算装置および方法 |
| WO2021165779A1 (ja) * | 2020-02-21 | 2021-08-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US11165434B2 (en) | 2019-03-15 | 2021-11-02 | Analog Devices International Unlimited Company | Leakage reduction for multi-function configurable circuit |
| WO2021240633A1 (ja) * | 2020-05-26 | 2021-12-02 | 日本電気株式会社 | 情報処理回路および情報処理回路の設計方法 |
| CN113785360A (zh) * | 2019-05-02 | 2021-12-10 | 硅存储技术股份有限公司 | 用于深度学习人工神经网络中的模拟神经存储器的输出阵列神经元转换和校准 |
| US11615834B2 (en) | 2020-09-17 | 2023-03-28 | Kioxia Corporation | Semiconductor storage device and information processor |
| WO2023139990A1 (ja) * | 2022-01-24 | 2023-07-27 | ＬｅａｐＭｉｎｄ株式会社 | ニューラルネットワーク回路およびニューラルネットワーク演算方法 |
| CN116913342A (zh) * | 2023-09-13 | 2023-10-20 | 安徽大学 | 具有存内布尔逻辑运算功能的存储电路及其模块、芯片 |
| JP2023552526A (ja) * | 2020-12-03 | 2023-12-18 | インターナショナル・ビジネス・マシーンズ・コーポレーション | ニューロモルフィックコンピューティングの為のＦｅＦＥＴユニットセル |
| JP2024010137A (ja) * | 2019-04-29 | 2024-01-23 | グーグル エルエルシー | 外部メモリを機械学習アクセラレータにとってローカルとする仮想化 |
| US11893470B2 (en) | 2018-12-06 | 2024-02-06 | MIPS Tech, LLC | Neural network processing using specialized data representation |
| JP2024097816A (ja) * | 2019-02-22 | 2024-07-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US12417406B2 (en) | 2021-10-21 | 2025-09-16 | Google Llc | Virtualizing external memory as local to a machine learning accelerator |
-
2017
- 2017-02-17 JP JP2017027585A patent/JP2018133016A/ja not_active Withdrawn
Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020118051A1 (en) * | 2018-12-06 | 2020-06-11 | MIPS Tech, LLC | Neural network processing using specialized data representation |
| US11893470B2 (en) | 2018-12-06 | 2024-02-06 | MIPS Tech, LLC | Neural network processing using specialized data representation |
| JP7702530B2 (ja) | 2019-02-22 | 2025-07-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2024097816A (ja) * | 2019-02-22 | 2024-07-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US11165434B2 (en) | 2019-03-15 | 2021-11-02 | Analog Devices International Unlimited Company | Leakage reduction for multi-function configurable circuit |
| JP2024010137A (ja) * | 2019-04-29 | 2024-01-23 | グーグル エルエルシー | 外部メモリを機械学習アクセラレータにとってローカルとする仮想化 |
| CN113785360A (zh) * | 2019-05-02 | 2021-12-10 | 硅存储技术股份有限公司 | 用于深度学习人工神经网络中的模拟神经存储器的输出阵列神经元转换和校准 |
| JP2022531766A (ja) * | 2019-05-02 | 2022-07-11 | シリコン ストーリッジ テクノロージー インコーポレイテッド | 深層学習人工ニューラルネットワークにおけるアナログニューラルメモリ用の出力アレイニューロンの変換及び較正 |
| US12353503B2 (en) | 2019-05-02 | 2025-07-08 | Silicon Storage Technology, Inc. | Output array neuron conversion and calibration for analog neural memory in deep learning artificial neural network |
| US20210150319A1 (en) * | 2019-11-15 | 2021-05-20 | Samsung Electronics Co., Ltd. | Neuromorphic device based on memory |
| US11620504B2 (en) | 2019-11-15 | 2023-04-04 | Samsung Electronics Co., Ltd. | Neuromorphic device based on memory |
| JP2021103521A (ja) * | 2019-12-24 | 2021-07-15 | 財團法人工業技術研究院Ｉｎｄｕｓｔｒｉａｌ Ｔｅｃｈｎｏｌｏｇｙ Ｒｅｓｅａｒｃｈ Ｉｎｓｔｉｔｕｔｅ | ニューラルネットワーク演算装置および方法 |
| US12265904B2 (en) | 2019-12-24 | 2025-04-01 | Industrial Technology Research Institute | Apparatus and method for neural network computation |
| JP7365999B2 (ja) | 2019-12-24 | 2023-10-20 | 財團法人工業技術研究院 | ニューラルネットワーク演算装置および方法 |
| JPWO2021165779A1 (enrdf_load_stackoverflow) * | 2020-02-21 | 2021-08-26 | ||
| JP7684946B2 (ja) | 2020-02-21 | 2025-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2021165779A1 (ja) * | 2020-02-21 | 2021-08-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2021240633A1 (ja) * | 2020-05-26 | 2021-12-02 | 日本電気株式会社 | 情報処理回路および情報処理回路の設計方法 |
| JP7456501B2 (ja) | 2020-05-26 | 2024-03-27 | 日本電気株式会社 | 情報処理回路および情報処理回路の設計方法 |
| JPWO2021240633A1 (enrdf_load_stackoverflow) * | 2020-05-26 | 2021-12-02 | ||
| US11615834B2 (en) | 2020-09-17 | 2023-03-28 | Kioxia Corporation | Semiconductor storage device and information processor |
| JP2023552526A (ja) * | 2020-12-03 | 2023-12-18 | インターナショナル・ビジネス・マシーンズ・コーポレーション | ニューロモルフィックコンピューティングの為のＦｅＦＥＴユニットセル |
| JP7658695B2 (ja) | 2020-12-03 | 2025-04-08 | インターナショナル・ビジネス・マシーンズ・コーポレーション | ニューロモルフィックコンピューティングの為のＦｅＦＥＴユニットセル |
| US12417406B2 (en) | 2021-10-21 | 2025-09-16 | Google Llc | Virtualizing external memory as local to a machine learning accelerator |
| WO2023139990A1 (ja) * | 2022-01-24 | 2023-07-27 | ＬｅａｐＭｉｎｄ株式会社 | ニューラルネットワーク回路およびニューラルネットワーク演算方法 |
| CN116913342B (zh) * | 2023-09-13 | 2023-12-01 | 安徽大学 | 具有存内布尔逻辑运算功能的存储电路及其模块、芯片 |
| CN116913342A (zh) * | 2023-09-13 | 2023-10-20 | 安徽大学 | 具有存内布尔逻辑运算功能的存储电路及其模块、芯片 |
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