JP2018101762A - Method for manufacturing ceramic substrate, and method for manufacturing light-emitting device - Google Patents

Method for manufacturing ceramic substrate, and method for manufacturing light-emitting device Download PDF

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JP2018101762A
JP2018101762A JP2016248667A JP2016248667A JP2018101762A JP 2018101762 A JP2018101762 A JP 2018101762A JP 2016248667 A JP2016248667 A JP 2016248667A JP 2016248667 A JP2016248667 A JP 2016248667A JP 2018101762 A JP2018101762 A JP 2018101762A
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ceramic substrate
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JP6776879B2 (en
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元清 白浜
Motokiyo Shirahama
元清 白浜
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Nichia Chemical Industries Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a ceramic substrate reduced in light absorption, and a light-emitting device.SOLUTION: A method for manufacturing a ceramic substrate comprises the steps of: preparing a precursor of the ceramic substrate including an aluminum nitride-containing ceramic and a pair of conductive members disposed on a top face of the ceramic, and having, on its top face, an element placement region to place a light-emitting element on; and forming metal aluminum from an aluminum nitride by applying a laser beam to the ceramic disposed in a light-exposure region exposed to light from the light-emitting element placed in the element placement region.SELECTED DRAWING: Figure 3A

Description

本開示は、セラミック基板の製造方法、及び、発光装置及び発光装置の製造方法に関する。   The present disclosure relates to a method for manufacturing a ceramic substrate, a light emitting device, and a method for manufacturing a light emitting device.

半導体発光素子（以下「発光素子」）を備えた発光装置として、セラミック基板を用いた発光装置が知られている。セラミック基板に反射膜として金属膜を備えた基板が知られている。セラミックのうち、窒化アルミニウム（ＡｌＮ）は放熱性に優れているため、高出力の発光装置に用いられている（例えば、特許文献１）。   A light emitting device using a ceramic substrate is known as a light emitting device including a semiconductor light emitting element (hereinafter referred to as “light emitting element”). A substrate provided with a metal film as a reflective film on a ceramic substrate is known. Among ceramics, aluminum nitride (AlN) is excellent in heat dissipation, and thus is used in high-power light-emitting devices (for example, Patent Document 1).

登録実用新案第３１６９８２７号公報Registered Utility Model No. 3169827

窒化アルミニウムは黒色であるため、発光素子からの光を吸収し易い。そのため、光取り出し効率が低下し易い。   Since aluminum nitride is black, it easily absorbs light from the light emitting element. For this reason, the light extraction efficiency tends to decrease.

本開示は、以下の構成を含む。
窒化アルミニウムを含むセラミックと、セラミックの上面に配置される一対の導電部材とを備え、上面に発光素子が載置される素子載置領域を備えるセラミック基板の前駆体を準備する工程と、素子載置領域に載置される発光素子からの光が照射される光照射領域に配置される前記セラミックに、レーザ光を照射することで窒化アルミニウムから金属アルミニウムを形成する工程と、を備えるセラミック基板の製造方法。 The present disclosure includes the following configurations.
A step of preparing a ceramic substrate precursor comprising a ceramic containing aluminum nitride and a pair of conductive members disposed on the upper surface of the ceramic, and comprising an element mounting region on which the light emitting element is mounted; A step of forming metal aluminum from aluminum nitride by irradiating the ceramic disposed in the light irradiation region irradiated with light from the light emitting element placed in the placement region with laser light. Production method.

以上により、光吸収を低減したセラミック基板及び発光装置を、容易に得ることができる。   As described above, the ceramic substrate and the light emitting device with reduced light absorption can be easily obtained.

図１Ａは、実施形態に係るセラミック基板の製造方法で得られるセラミック基板の概略斜視図である。FIG. 1A is a schematic perspective view of a ceramic substrate obtained by the method for manufacturing a ceramic substrate according to the embodiment. 図１Ｂは、実施形態に係るセラミック基板の製造方法で得られるセラミック基板の概略上面図である。FIG. 1B is a schematic top view of a ceramic substrate obtained by the method for manufacturing a ceramic substrate according to the embodiment. 図１Ｃは、図１Ｂに示す１Ｃ−１Ｃ線における概略断面図である。1C is a schematic cross-sectional view taken along line 1C-1C shown in FIG. 1B. 図１Ｄは、図１Ｃの部分拡大図である。FIG. 1D is a partially enlarged view of FIG. 1C. 図２Ａは、実施形態に係るセラミック基板の製造方法を示す概略断面図である。FIG. 2A is a schematic cross-sectional view illustrating the method for manufacturing the ceramic substrate according to the embodiment. 図２Ｂは、実施形態に係るセラミック基板の製造方法を示す概略断面図である。FIG. 2B is a schematic cross-sectional view illustrating the method for manufacturing the ceramic substrate according to the embodiment. 図３Ａは、実施形態に係る発光装置の製造方法で得られる発光装置を示す概略断面図である。FIG. 3A is a schematic cross-sectional view illustrating a light-emitting device obtained by the method for manufacturing a light-emitting device according to the embodiment. 図３Ｂは、図３Ａの部分拡大図である。FIG. 3B is a partially enlarged view of FIG. 3A. 図４Ａは、実施形態に係る発光装置の製造方法を示す概略断面図である。FIG. 4A is a schematic cross-sectional view illustrating the method for manufacturing the light emitting device according to the embodiment. 図４Ｂは、実施形態に係る発光装置の製造方法を示す概略断面図である。FIG. 4B is a schematic cross-sectional view illustrating the method for manufacturing the light emitting device according to the embodiment.

本発明を実施するための形態を、以下に図面を参照しながら説明する。ただし、以下に示す形態は、本発明の技術思想を具体化するためのセラミック基板の製造方法及び発光装置の製造方法を例示するものであって、本発明は、セラミック基板の製造方法及び発光装置の製造方法を以下に限定するものではない。   A mode for carrying out the present invention will be described below with reference to the drawings. However, the embodiments shown below exemplify a method for manufacturing a ceramic substrate and a method for manufacturing a light emitting device for embodying the technical idea of the present invention, and the present invention relates to a method for manufacturing a ceramic substrate and a light emitting device. However, the production method is not limited to the following.

また、本明細書は、特許請求の範囲に示される部材を、実施の形態の部材に特定するものでは決してない。特に、実施の形態に記載されている構成部品の寸法、材質、形状、その相対的配置等は、特定的な記載がない限りは、本開示の範囲をそれのみに限定する趣旨ではなく、単なる説明例にすぎない。尚、各図面が示す部材の大きさや位置関係等は、説明を明確にするため誇張していることがある。さらに以下の説明において、同一の名称、符号については同一もしくは同質の部材を示しており、詳細説明を適宜省略する。   Further, the present specification by no means specifies the member shown in the claims as the member of the embodiment. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the component parts described in the embodiments are not intended to limit the scope of the present disclosure only to that unless otherwise specified. It is just an example. It should be noted that the size and positional relationship of the members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, in the following description, the same name and symbol indicate the same or the same members, and detailed description thereof will be omitted as appropriate.

＜実施形態１＞
図１Ａ〜図１Ｄは、実施形態１に係るセラミック基板の製造方法によって得られるセラミック基板１０を示す。尚、ここでは、複数のセラミック基板の集合体１０Ｂを図示して説明する。個々のセラミック基板１０は、セラミック基板の集合体１０Ｂを個片化することで形成することができる。例えば、図１Ｂに示すセラミック基板の集合体１０Ｂにおいての破線で囲まれた領域を、１つのセラミック基板１０とすることができる。 <Embodiment 1>
1A to 1D show a ceramic substrate 10 obtained by the method for manufacturing a ceramic substrate according to the first embodiment. Here, a plurality of ceramic substrate aggregates 10B are illustrated and described. Each ceramic substrate 10 can be formed by separating the ceramic substrate aggregate 10B into individual pieces. For example, a region surrounded by a broken line in the ceramic substrate assembly 10B shown in FIG.

図１Ａは、実施形態１に係るセラミック基板の製造方法によって得られるセラミック基板の集合体１０Ｂの概略斜視図である。図１Ｂは、セラミック基板の集合体１０Ｂの一部を拡大した概略上面図である。図１Ｃは、図１Ｂの１Ｃ−１Ｃ線における概略断面図である。図１Ｄは、図１Ｃの部分拡大図である。   1A is a schematic perspective view of an aggregate 10B of ceramic substrates obtained by the method for manufacturing a ceramic substrate according to Embodiment 1. FIG. FIG. 1B is an enlarged schematic top view of a part of the ceramic substrate assembly 10B. 1C is a schematic cross-sectional view taken along line 1C-1C in FIG. 1B. FIG. 1D is a partially enlarged view of FIG. 1C.

セラミック基板１０は、母材であるセラミック２０と、一対の電極として機能する導電部材３０と、を備える。ここでは、凹部Ｓを備えたセラミック基板１０を例示している。尚、セラミック基板１０は、凹部Ｓを備えない形状であってもよく、例えば、平板状のセラミック基板でもよい。   The ceramic substrate 10 includes a ceramic 20 that is a base material and a conductive member 30 that functions as a pair of electrodes. Here, the ceramic substrate 10 provided with the recessed part S is illustrated. The ceramic substrate 10 may have a shape that does not include the recess S, and may be, for example, a flat ceramic substrate.

凹部Ｓ内の上面（凹部の底面）２２は、一対の導電部材３０と、これらの間に位置し、窒化アルミニウムを含むセラミック２０と、を備える。さらに、セラミック２０の表面の一部に金属アルミニウム２１を備える。凹部Ｓの側壁はセラミック２０及び金属アルミニウム２１から構成されている。側壁の内側面２３はセラミック２０と金属アルミニウム２１から構成される。側壁の上面はセラミック２０から構成される。個片化後のセラミック基板の側壁の外側面はセラミック２０から構成される。   The upper surface (the bottom surface of the recess) 22 in the recess S includes a pair of conductive members 30 and a ceramic 20 that is located between them and contains aluminum nitride. Furthermore, a metal aluminum 21 is provided on a part of the surface of the ceramic 20. The side wall of the recess S is composed of ceramic 20 and metal aluminum 21. The inner side surface 23 of the side wall is composed of ceramic 20 and metal aluminum 21. The upper surface of the side wall is made of ceramic 20. The outer surface of the side wall of the ceramic substrate after separation is made of ceramic 20.

凹部Ｓ内の上面は、素子載置領域Ｃを含む。素子載置領域Ｃは、発光装置において発光素子が載置されている領域を指す。尚、発光素子を載置する前のセラミック基板１０においては、発光素子が載置される予定の領域を素子載置領域Ｃとする。   The upper surface in the recess S includes an element mounting area C. The element mounting area C refers to an area where a light emitting element is mounted in the light emitting device. In addition, in the ceramic substrate 10 before mounting the light emitting element, an area where the light emitting element is to be mounted is referred to as an element mounting area C.

このような凹部Ｓを備えるセラミック基板１０は、凹部Ｓ内に載置された発光素子からの光は、凹部Ｓ内の面である底面２２と内側面２３とに照射される。つまり、図１Ｃに示すように、光照射領域Ｌは、凹部Ｓの底面２２と内側面２３とを指す。発光素子を載置する前のセラミック基板１０において、光照射領域Ｌは、光が照射される予定の領域である。   In the ceramic substrate 10 having such a recess S, light from the light emitting element placed in the recess S is irradiated to the bottom surface 22 and the inner side surface 23 which are surfaces in the recess S. That is, as illustrated in FIG. 1C, the light irradiation region L indicates the bottom surface 22 and the inner side surface 23 of the recess S. In the ceramic substrate 10 before the light emitting element is placed, the light irradiation region L is a region where light is to be irradiated.

窒化アルミニウムを含むセラミック２０は、黒色であるため、発光素子からの光の反射率が低い。金属アルミニウム２１は、金属の光沢を備えており、セラミック２０よりも、光の反射率が高くなっている。例えば、金属アルミニウム２１の反射率は、発光素子からの光に対して４０％以上、６０％以上、８０％以上など、とすることができる。   Since the ceramic 20 containing aluminum nitride is black, the reflectance of light from the light emitting element is low. The metallic aluminum 21 has a metallic luster and has a higher light reflectance than the ceramic 20. For example, the reflectance of the metal aluminum 21 can be 40% or more, 60% or more, 80% or more, etc. with respect to the light from the light emitting element.

このような、セラミック２０よりも光の反射率の高い金属アルミニウム２１を光照射領域Ｌに配置することで、発光素子からの光の吸収を低減することができる。凹部Ｓの側壁の上面は、金属アルミニウムを有しておらず、セラミック２０が表面に露出している。そのため、このようなセラミック基板１０を用いた発光装置をディスプレイなどに用いた場合、コントラストを向上させることができる。   By disposing such metal aluminum 21 having a higher light reflectance than the ceramic 20 in the light irradiation region L, absorption of light from the light emitting element can be reduced. The upper surface of the side wall of the recess S does not have metallic aluminum, and the ceramic 20 is exposed on the surface. Therefore, when the light emitting device using such a ceramic substrate 10 is used for a display or the like, the contrast can be improved.

金属アルミニウム２１は、光照射領域Ｌに位置するセラミック２０のうち、例えば、３０％以上の面積に配置させることが好ましく、５０％以上とすることがより好ましい。   For example, the metal aluminum 21 is preferably arranged in an area of 30% or more of the ceramic 20 located in the light irradiation region L, and more preferably 50% or more.

金属アルミニウム２１は導電性であるため、一対の電極として機能する導電部材３０の両方と接するとショートする。そのため、金属アルミニウム２１は、少なくとも一方の導電部材３０からは離間するように配置されることが必要である。換言すると、金属アルミニウム２１は、導電部材３０の一方と接していてもよい。金属アルミニウム２１は、導電部材３０から離間して配置されることが好ましい。   Since the metal aluminum 21 is conductive, the metal aluminum 21 is short-circuited when in contact with both of the conductive members 30 functioning as a pair of electrodes. Therefore, the metal aluminum 21 needs to be arranged so as to be separated from at least one of the conductive members 30. In other words, the metal aluminum 21 may be in contact with one of the conductive members 30. It is preferable that the metal aluminum 21 is disposed away from the conductive member 30.

凹部Ｓの内側面２３に配置される金属アルミニウム２１と、凹部Ｓの底面２２に配置される金属アルミニウム２１とは、連続していてもよい。これにより、光の吸収をより低減することができる。また、凹部Ｓの内側面２３に配置される金属アルミニウム２１と、凹部Ｓの底面２２に配置される金属アルミニウム２１とは、離間していてもよい。   The metal aluminum 21 disposed on the inner side surface 23 of the recess S and the metal aluminum 21 disposed on the bottom surface 22 of the recess S may be continuous. Thereby, light absorption can be further reduced. Further, the metal aluminum 21 disposed on the inner side surface 23 of the recess S and the metal aluminum 21 disposed on the bottom surface 22 of the recess S may be separated from each other.

上述のようなセラミック基板は、以下の製造方法によって形成することができる。図２Ａ、図２Ｂは、実施形態１に係るセラミック基板の製造方法を説明する概略図である。まず、図２Ａに示すような、セラミック基板の前駆体１０Ａを準備する。図２Ａでは、セラミック基板の前駆体１０Ａの集合体を図示している。   The ceramic substrate as described above can be formed by the following manufacturing method. 2A and 2B are schematic views for explaining a method for manufacturing a ceramic substrate according to the first embodiment. First, a ceramic substrate precursor 10A as shown in FIG. 2A is prepared. In FIG. 2A, an aggregate of ceramic substrate precursors 10A is illustrated.

セラミック基板の前駆体１０Ａは、母材であるセラミック２０と、一対の電極として機能する導電部材３０と、を備える。セラミック基板の前駆体１０Ａは、凹部Ｓを備えている。凹部Ｓ内の上面２２は、一対の導電部材３０と、これらの間のセラミック２０と、を備える。凹部Ｓの内側面２３は、セラミック２０のみからなる。   10 A of ceramic substrate precursors are provided with the ceramic 20 which is a base material, and the electrically-conductive member 30 which functions as a pair of electrodes. The ceramic substrate precursor 10A is provided with a recess S. The upper surface 22 in the recess S includes a pair of conductive members 30 and a ceramic 20 between them. The inner side surface 23 of the recess S is made only of the ceramic 20.

次に、図２Ｂに示すように、光照射領域Ｌである凹部Ｓの底面２２及び内側面２３にレーザ光を照射する。レーザ光を出射するレーザ光源Ｐとしては、窒化ガリウム系半導体レーザなどの半導体レーザ、ＹＡＧ、ルビー、ＹＶＯ４などの固体レーザ、ＣＯ２、Ｈｅ−Ｎｅ、エキシマレーザなどの気体レーザ等が挙げられる。また、レーザ光の波長は、例えば、２００ｎｍ〜１０６００ｎｍとすることができる。 Next, as shown in FIG. 2B, the bottom surface 22 and the inner side surface 23 of the recess S which is the light irradiation region L are irradiated with laser light. Examples of the laser light source P that emits laser light include semiconductor lasers such as gallium nitride semiconductor lasers, solid-state lasers such as YAG, ruby, and YVO 4, and gas lasers such as CO 2 , He—Ne, and excimer lasers. The wavelength of the laser light can be set to, for example, 200 nm to 10600 nm.

窒化アルミニウムを含むセラミック２０は、レーザ光が照射された部分において熱により分解されて窒素が離脱する。これにより、黒色の窒化アルミニウムの一部が金属アルミニウム２１となる。つまり、金属アルミニウム２１は、窒化アルミニウムを含むセラミック２０の一部を変質させて形成したものである。   The ceramic 20 containing aluminum nitride is decomposed by heat at a portion irradiated with the laser light, and nitrogen is released. Thereby, a part of the black aluminum nitride becomes the metal aluminum 21. That is, the metal aluminum 21 is formed by altering a part of the ceramic 20 containing aluminum nitride.

このように、窒化アルミニウムを含むセラミック２０にレーザ光を照射することで、光を吸収しやすいセラミック２０を、それよりも光吸収の少ない金属アルミニウム２１とすることができる。凹部を備えたセラミック基板は、グリーンシートを積層させて形成される。そのため、凹部の内側面はセラミック基板のみから構成されることが多い。実施形態２に係る製造方法では、このような凹部の内側面にレーザ光を照射することで、窒化アルミニウムを含むセラミック２０を金属アルミニウム２１に変質させることができる。   In this manner, by irradiating the ceramic 20 containing aluminum nitride with laser light, the ceramic 20 that easily absorbs light can be made into the metal aluminum 21 that absorbs less light than that. The ceramic substrate having the recesses is formed by laminating green sheets. Therefore, the inner surface of the recess is often composed only of a ceramic substrate. In the manufacturing method according to the second embodiment, the ceramic 20 containing aluminum nitride can be transformed into the metal aluminum 21 by irradiating the inner surface of such a recess with laser light.

以上のような製造方法を用いて、図１Ａ〜図１Ｄに示すようなセラミック基板１０の集合体１０Ｂを得ることができる。   Using the manufacturing method as described above, an aggregate 10B of ceramic substrates 10 as shown in FIGS. 1A to 1D can be obtained.

＜実施形態２＞
図３Ａ、図３Ｂは、実施形態２に係る発光装置の製造方法によって得られる発光装置１００の概略断面図である。発光装置１００は、実施形態１のセラミック基板の製造方法で得られたセラミック基板１０を有している。発光装置１００は、セラミック基板１０と、セラミック基板１０に載置される発光素子６０と、を備える。セラミック基板１０は、一対の電極となる導電部材３０と、絶縁性のセラミック２０と、を備える。セラミック基板１０の上面の素子載置領域に発光素子６０が載置されている。図３Ａでは、セラミック基板１０は凹部Ｓを備えており、この凹部Ｓの底面２２がセラミック基板１０の上面である。発光素子６０は、セラミック基板１０の導電部材３０とワイヤ４０を介して電気的に接続されている。凹部Ｓ内には、発光素子６０を被覆する封止部材５０が配置されている。 <Embodiment 2>
3A and 3B are schematic cross-sectional views of the light-emitting device 100 obtained by the method for manufacturing a light-emitting device according to the second embodiment. The light emitting device 100 includes the ceramic substrate 10 obtained by the method for manufacturing a ceramic substrate of the first embodiment. The light emitting device 100 includes a ceramic substrate 10 and a light emitting element 60 placed on the ceramic substrate 10. The ceramic substrate 10 includes a conductive member 30 serving as a pair of electrodes and an insulating ceramic 20. The light emitting element 60 is placed in the element placement area on the upper surface of the ceramic substrate 10. In FIG. 3A, the ceramic substrate 10 includes a recess S, and the bottom surface 22 of the recess S is the upper surface of the ceramic substrate 10. The light emitting element 60 is electrically connected to the conductive member 30 of the ceramic substrate 10 via the wire 40. A sealing member 50 that covers the light emitting element 60 is disposed in the recess S.

発光素子６０はフリップチップ実装されていてもよい。その場合は、ワイヤは用いず、導電性の接合部材を用いて発光素子６０の電極と導電部材３０とを電気的に接続する。   The light emitting element 60 may be flip-chip mounted. In that case, the electrode of the light emitting element 60 and the conductive member 30 are electrically connected using a conductive bonding member without using a wire.

セラミック２０の表面の少なくとも一部に、金属アルミニウムが配置されている。金属アルミニウム２１は、発光素子６０からの光が照射される光照射領域に配置されている。   Metal aluminum is disposed on at least a part of the surface of the ceramic 20. The metal aluminum 21 is disposed in a light irradiation region to which light from the light emitting element 60 is irradiated.

光反射領域は、凹部Ｓ内の面である底面２２と内側面２３である。凹部Ｓの底面２２のセラミック２０の表面と、凹部Ｓの内側面２３のセラミック２０の表面に、金属アルミニウム２１を備える。   The light reflection regions are a bottom surface 22 and an inner side surface 23 which are surfaces in the recess S. Metal aluminum 21 is provided on the surface of the ceramic 20 on the bottom surface 22 of the recess S and on the surface of the ceramic 20 on the inner side surface 23 of the recess S.

発光素子６０は、任意の波長のものを選択することができる。例えば、フルカラーディスプレイとして用いられる表示装置用の発光装置とする場合は、青色、緑色、赤色の３色の発光素子を用いる。青色、緑色の発光素子としては、ＺｎＳｅや窒化物系半導体（ＩｎＸＡｌＹＧａ１−Ｘ−ＹＮ、０≦Ｘ、０≦Ｙ、Ｘ＋Ｙ≦１）を用いたものを用いることができる。また、赤色の発光素子としては、ＧａＡｓ、ＩｎＰなどを用いることができる。さらに、これ以外の材料からなる半導体発光素子を用いることもできる。用いる発光素子の組成や発光色、大きさや、個数などは目的に応じて適宜選択することができる。 The light emitting element 60 can be selected to have an arbitrary wavelength. For example, when a light emitting device for a display device used as a full color display is used, light emitting elements of three colors of blue, green, and red are used. As the blue and green light-emitting elements, those using ZnSe or a nitride-based semiconductor (In X Al Y Ga 1-XY N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) can be used. As the red light emitting element, GaAs, InP, or the like can be used. Furthermore, a semiconductor light emitting element made of a material other than this can also be used. The composition, emission color, size, number, and the like of the light emitting element to be used can be appropriately selected according to the purpose.

更に、可視光領域の光だけでなく、紫外線や赤外線を出力する発光素子とすることができる。特に、金属アルミニウムに対する反射率の高い紫外線発光素子を用いると、光の吸収をより低減することができる。さらには、発光素子とともに、受光素子、及びそれらの半導体素子を過電圧による破壊から守る保護素子（例えば、ツェナーダイオードやコンデンサー）、あるいはそれらを組み合わせたものを搭載することができる。   Furthermore, a light-emitting element that outputs not only light in the visible light region but also ultraviolet rays and infrared rays can be obtained. In particular, when an ultraviolet light emitting element having a high reflectance with respect to metallic aluminum is used, light absorption can be further reduced. In addition to the light emitting element, a light receiving element and a protective element (for example, a Zener diode or a capacitor) that protects these semiconductor elements from destruction due to overvoltage, or a combination thereof can be mounted.

発光素子６０の一対の電極は、接合部材を介して、又はワイヤ４０を介して導電部材３０と電気的に接続されている。接合部材としては、例えば、絶縁性接合部材又は導電性接合部材を用いることができる。絶縁性接合部材としては、樹脂が挙げられ、透明樹脂、もしくは白色樹脂などが挙げられる。導電性接合部材としては、共晶材料又ははんだが挙げられる。好ましい共晶材料としては、ＡｕとＳｎを主成分とする合金、ＡｕとＳｉとを主成分とする合金、ＡｕとＧｅとを主成分とする合金などが挙げられる。はんだとしては、ＡｇとＣｕとＳｎとを主成分とする合金、ＣｕとＳｎとを主成分とする合金、ＢｉとＳｎとを主成分とする合金などが挙げられる。   The pair of electrodes of the light emitting element 60 is electrically connected to the conductive member 30 via a bonding member or via a wire 40. As the bonding member, for example, an insulating bonding member or a conductive bonding member can be used. Examples of the insulating bonding member include a resin, such as a transparent resin or a white resin. Examples of the conductive bonding member include a eutectic material or solder. Preferable eutectic materials include an alloy mainly composed of Au and Sn, an alloy mainly composed of Au and Si, an alloy mainly composed of Au and Ge, and the like. Examples of the solder include an alloy mainly composed of Ag, Cu, and Sn, an alloy mainly composed of Cu and Sn, and an alloy mainly composed of Bi and Sn.

封止部材５０は、発光素子６０、保護素子、ワイヤ４０など、セラミック基板１０に実装される電子部品を、塵芥、水分、外力などから保護する部材である。封止部材５０の材料としては、発光素子６０からの光を透過可能な透光性を有し、且つ、それらによって劣化しにくい耐光性を有するものが好ましい。封止部材５０の具体的な材料としては、シリコーン樹脂組成物、エポキシ樹脂組成物、等の、発光素子からの光を透過可能な透光性を有する絶縁樹脂組成物を挙げることができる。また、封止部材５０は、これらの有機物に限られず、ガラス、シリカゾル等の無機物も用いることができる。このような材料に加え、所望に応じて着色剤、光拡散剤、光反射材、各種フィラー、波長変換部材（蛍光部材）などを含有させることもできる。封止部材５０は、液状の樹脂材料等をポッティング、スプレー、印刷等によって発光素子を覆うように形成した後、硬化させることができる。あるいは、あらかじめ成形した封止部材を、接着材等で接合させてもよい。   The sealing member 50 is a member that protects electronic components mounted on the ceramic substrate 10 such as the light emitting element 60, the protection element, and the wire 40 from dust, moisture, external force, and the like. As a material of the sealing member 50, a material having a light-transmitting property capable of transmitting light from the light-emitting element 60 and having a light resistance which is not easily deteriorated by them is preferable. Specific examples of the material for the sealing member 50 include a translucent insulating resin composition that can transmit light from the light emitting element, such as a silicone resin composition and an epoxy resin composition. Further, the sealing member 50 is not limited to these organic materials, and inorganic materials such as glass and silica sol can also be used. In addition to such materials, a colorant, a light diffusing agent, a light reflecting material, various fillers, a wavelength conversion member (fluorescent member), and the like can be included as desired. The sealing member 50 can be cured after forming a liquid resin material or the like so as to cover the light emitting element by potting, spraying, printing, or the like. Or you may join the sealing member shape | molded previously with an adhesive material etc.

封止部材５０に含まれる蛍光体としては、例えば、緑色〜黄色系発光するＹＡＧ系、ＬＡＧ系、緑色発光するＳｉＡｌＯＮ系（βサイアロン）、赤色発光するＳＣＡＳＮ、ＣＡＳＮ系、ＫＳＦ系蛍光体（Ｋ２ＳｉＦ６：Ｍｎ）、硫化物系蛍光体等の蛍光体の単独又は組み合わせが挙げられる。 Examples of the phosphor included in the sealing member 50 include, for example, YAG-based, LAG-based that emit green to yellow light, SiAlON-based (β sialon) that emits green light, SCASN, CASN, and KSF-based phosphors that emit red light (K). 2 SiF 6 : Mn), phosphors such as sulfide phosphors, or a combination thereof.

以上のような発光装置１００の製造方法は、以下の工程を備える。まず、図１Ｃに示すようなセラミック基板１０の集合体１０Ｂを準備する工程を備える。セラミック基板の集合体１０Ｂは、実施形態１に示した方法によって形成して準備するほか、購入して準備してもよい。   The manufacturing method of the light emitting device 100 as described above includes the following steps. First, the process of preparing the aggregate | assembly 10B of the ceramic substrate 10 as shown to FIG. 1C is provided. The ceramic substrate aggregate 10B may be prepared by being prepared by the method shown in the first embodiment, or may be purchased and prepared.

次に、図４Ａに示すように、セラミック基板の集合体１０Ｂの上面に、発光素子６０を載置し、ワイヤ４０を接続する工程を備える。次に、図４Ｂに示すように、封止部材５０を形成する工程を備える。最後に、凹部Ｓと隣接する凹部Ｓの間でセラミック基板１０の集合体１０Ｂを切断し、図３Ａに示すような、個片化された発光装置１００を得る。   Next, as shown in FIG. 4A, a step of placing the light emitting element 60 on the upper surface of the ceramic substrate aggregate 10B and connecting the wire 40 is provided. Next, as shown in FIG. 4B, a step of forming a sealing member 50 is provided. Finally, the aggregate 10B of the ceramic substrate 10 is cut between the concave portion S and the adjacent concave portion S to obtain a light emitting device 100 that is singulated as shown in FIG. 3A.

本開示に係るセラミック基板、発光装置は、ディスプレイ用光源等として使用することができる。   The ceramic substrate and the light emitting device according to the present disclosure can be used as a light source for a display.

１０…セラミック基板
１０Ａ…セラミック基板の前駆体
１０Ｂ…セラミック基板の集合体
２０…セラミック（窒化アルミニウム）
２１…金属アルミニウム
Ｓ…凹部
２２…上面（底面）
２３…内側面
３０…導電部材
Ｃ…素子載置領域
Ｌ…光照射領域
Ｐ…レーザ光源
１００…発光装置
１００Ａ…発光装置の集合体
１０…セラミック基板
４０…ワイヤ
５０…封止部材
６０…発光素子 DESCRIPTION OF SYMBOLS 10 ... Ceramic substrate 10A ... Precursor of ceramic substrate 10B ... Assembly of ceramic substrate 20 ... Ceramic (aluminum nitride)
21 ... Metal aluminum S ... Recess 22 ... Top (bottom)
DESCRIPTION OF SYMBOLS 23 ... Inner side surface 30 ... Conductive member C ... Element mounting area L ... Light irradiation area P ... Laser light source 100 ... Light emitting device 100A ... Assembly of light emitting device 10 ... Ceramic substrate 40 ... Wire 50 ... Sealing member 60 ... Light emitting element

Claims (5)

窒化アルミニウムを含むセラミックと、前記セラミックの上面に配置される一対の導電部材とを備え、上面に発光素子が載置される素子載置領域を備えるセラミック基板の前駆体を準備する工程と、
前記素子載置領域に載置される発光素子からの光が照射される光照射領域に配置される前記セラミックに、レーザ光を照射することで前記窒化アルミニウムから金属アルミニウムを形成する工程と、
を備えるセラミック基板の製造方法。 Preparing a ceramic substrate precursor comprising a ceramic containing aluminum nitride and a pair of conductive members disposed on the upper surface of the ceramic, and comprising an element mounting region on which the light emitting element is mounted;
Forming metal aluminum from the aluminum nitride by irradiating the ceramic disposed in the light irradiation region irradiated with light from the light emitting element mounted on the element mounting region; and
A method for manufacturing a ceramic substrate comprising: 前記金属アルミニウムは、前記導電部材の一方と接している請求項１記載のセラミック基板の製造方法。   The method for manufacturing a ceramic substrate according to claim 1, wherein the metal aluminum is in contact with one of the conductive members. 前記セラミック基板の前駆体は、凹部を備える、請求項１又は請求項２記載のセラミック基板の製造方法。   The method for manufacturing a ceramic substrate according to claim 1, wherein the precursor of the ceramic substrate includes a recess. 窒化アルミニウムを含むセラミックと、前記セラミックの上面に配置される一対の導電部材とを備え、上面に発光素子が載置される素子載置領域を備えるセラミック基板の前駆体を準備する工程と、
前記素子載置領域に載置される発光素子からの光が照射される光照射領域に配置される前記セラミックに、レーザ光を照射することで前記窒化アルミニウムから金属アルミニウムを形成してセラミック基板を形成する工程と、
前記素子載置領域に発光素子を載置する工程と、
を備える発光装置の製造方法。 Preparing a ceramic substrate precursor comprising a ceramic containing aluminum nitride and a pair of conductive members disposed on the upper surface of the ceramic, and comprising an element mounting region on which the light emitting element is mounted;
A ceramic substrate is formed by forming metal aluminum from the aluminum nitride by irradiating the ceramic disposed in the light irradiation region irradiated with light from the light emitting element mounted on the element mounting region by irradiating laser light. Forming, and
Placing a light emitting element on the element placement region;
A method for manufacturing a light emitting device. 前記発光素子は、紫外線発光素子である請求項４記載の発光装置の製造方法。   The method of manufacturing a light emitting device according to claim 4, wherein the light emitting element is an ultraviolet light emitting element.
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