JP2018095939A - Magnetron sputtering device, and production method for semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magnetron sputtering device capable of elongating the lifetime of a target, and a semiconductor manufacturing method.SOLUTION: A magnetron sputtering device according to the invention comprises: a vacuum tank; a stage disposed in the vacuum tank for mounting a process object on the upper face; a target disposed in the vacuum tank and having a first face confronting the upper face of the stage and a second face or a face on the opposite side of the first face; a magnet part mounted on the second face side of the target for establishing a magnetic field on the side of the first face and for reciprocating in parallel to the second face with respect to the target; and a rolling mechanism for rotating the target in a plane parallel to the upper face of the stage. The velocity of the reciprocating motions of the magnet part is smaller at the end portion than at the center part of the range of the reciprocating motions.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a magnetron sputtering apparatus and a method for manufacturing a semiconductor device.

  The sputtering method is a widely known technique for forming a thin film, and is used in the field of manufacturing electronic components such as semiconductors, liquid crystal display elements, and magnetic heads. As a sputtering apparatus, a bipolar bias sputtering apparatus, an RF sputtering apparatus, a DC magnetron sputtering apparatus, and the like are known. Sputtering apparatuses are widely used for forming device electrodes and wiring in the semiconductor field and liquid crystal field. In particular, the DC magnetron sputtering apparatus has an advantage that a thin film can be formed quickly and is widely used in industrial applications.

  Patent Document 1 discloses a magnetron sputtering apparatus. This magnetron sputtering apparatus includes a magnet device disposed on the back surface of the target. The magnet device includes a ring-shaped outer magnet and an inner magnet that moves inside the outer magnet. As a result, the in-plane variation in the degree of target wear is improved.

JP 2012-136780 A

  However, the magnetron sputtering apparatus disclosed in Patent Document 1 is intended for a sputtering apparatus that rotates a magnet on the back side of a target mainly used in the semiconductor field. For this reason, it cannot be applied to a sputtering apparatus in which a magnet is reciprocated or oscillated on the back side of a target widely used mainly in the liquid crystal field.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to obtain a magnetron sputtering apparatus and a semiconductor device manufacturing method that can extend the life of a target.

  A magnetron sputtering apparatus according to a first aspect of the present invention is provided with a vacuum chamber, a stage provided in the vacuum chamber, on which an object to be processed is mounted, and provided in the vacuum chamber, facing the upper surface of the stage. A target having a first surface and a second surface that is the surface opposite to the first surface; provided on the second surface side of the target; and generating a magnetic field on the first surface side; A magnet unit that reciprocates in parallel with the second surface with respect to the target, and a rotation mechanism that rotates the target in a plane parallel to the upper surface of the stage. The speed is smaller at the end than at the center of the range of reciprocation.

  A magnetron sputtering apparatus according to a second aspect of the present invention is a vacuum chamber, a stage provided in the vacuum chamber, on which an object to be processed is mounted, and provided in the vacuum chamber, facing the upper surface of the stage. And a target having a first surface that is opposite to the first surface, and a plurality of targets that are provided on the second surface side of the target and generate a magnetic field on the first surface side. And a control unit that controls a magnetic field generated by each of the plurality of electromagnets.

  According to a third aspect of the present invention, there is provided a semiconductor device manufacturing method comprising: a vacuum chamber; a stage provided in the vacuum chamber; a first surface provided in the vacuum chamber and opposed to an upper surface of the stage; A target having a second surface that is the surface opposite to the first surface; and a magnet unit that is provided on the second surface side of the target and generates a magnetic field on the first surface side. A step of preparing a magnetron sputtering apparatus, a mounting step of mounting a substrate on the upper surface of the stage, and sputtering the target while reciprocating the magnet portion in parallel with the second surface with respect to the target. A film forming process for forming a film on the substrate, and after the film forming process, the target is rotated in a plane parallel to the upper surface of the stage, and the mounting process and the film forming process are performed on another substrate. Comprising the steps of: Speed of the reciprocating movement of Gunetto portion is smaller at the ends than the center portion of the range of the reciprocating motion.

In the magnetron sputtering apparatus according to the first aspect of the invention, the target rotates with respect to the reciprocating direction of the magnet unit. For this reason, it is possible to replace the position of the portion where the target is consumed much and the portion where the target is consumed little. Therefore, the life of the target can be extended.
In the magnetron sputtering apparatus according to the second invention, the magnetic field generated by each of the plurality of electromagnets is controlled by the control unit. For this reason, a small magnetic field can be generated in a portion where the target is consumed greatly. Therefore, the life of the target can be extended.
In the method for manufacturing a semiconductor device according to the third aspect of the invention, the target is rotated with respect to the direction of reciprocation of the magnet portion. For this reason, it is possible to replace the position of the portion where the target is consumed much and the portion where the target is consumed little. Therefore, the life of the target can be extended.

1 is a sectional view of a magnetron sputtering apparatus according to a first embodiment. 3 is a perspective view of a magnet unit and a target according to Embodiment 1. FIG. 2 is a cross-sectional view of a magnetron sputtering apparatus according to a comparative example of Embodiment 1. FIG. 6 is a diagram for explaining a degree of consumption of a target according to a comparative example of Embodiment 1. FIG. 3 is a plan view of a target according to Embodiment 1. FIG. FIG. 6 is a plan view showing a state after rotation of the target according to the first embodiment. It is sectional drawing of the magnet part which concerns on Embodiment 2. FIG. 10 is a perspective view of a magnet unit according to Embodiment 3. FIG.

  A magnetron sputtering apparatus and a semiconductor device manufacturing method according to embodiments of the present invention will be described with reference to the drawings. The same or corresponding components are denoted by the same reference numerals, and repeated description may be omitted.

Embodiment 1 FIG.
FIG. 1 is a cross-sectional view of the magnetron sputtering apparatus according to the first embodiment. A magnetron sputtering apparatus 100 according to the present embodiment includes a vacuum chamber 1. A stage 3 is provided inside the vacuum chamber 1. The substrate 2 to be processed is mounted on the upper surface 63 of the stage 3. The substrate 2 is rectangular. The substrate 2 may be circular. The substrate 2 is a semiconductor substrate or a glass substrate. A target 6 is provided inside the vacuum chamber 1. The target 6 has a first surface 61 that faces the upper surface 63 of the stage 3, and a second surface 62 that is a surface opposite to the first surface 61.

  The magnetron sputtering apparatus 100 includes a rotation mechanism 30. The rotating mechanism 30 includes a backing plate 9 and a rotating shaft 31. The second surface 62 of the target 6 is attached to the lower surface of the backing plate 9. The target 6 is brazed to the backing plate 9 with indium or the like. One end of the rotating shaft 31 is attached to the upper surface of the backing plate 9. The other end of the rotating shaft 31 is fixed to the vacuum chamber 1. The rotation mechanism 30 rotates around the rotation shaft 31. Therefore, the rotation mechanism 30 rotates the target 6 in a plane parallel to the upper surface 63 of the stage 3.

  The magnet unit 7 is provided on the second surface 62 side of the target 6. The magnetic field generated by the magnet unit 7 leaks to the first surface 61 side. The magnet unit 7 generates a magnetic field on the first surface 61 side of the target 6. A plurality of magnets are arranged in the magnet unit 7 so that the south pole and the north pole are alternately arranged. The plurality of magnets are permanent magnets. A magnetic line arch 8 is formed on the first surface 61 side by the magnet portion 7 so as to go from the N pole to the adjacent S pole. In FIG. 1, the magnet unit 7 includes four magnets. The number of magnets provided in the magnet unit 7 is not limited to this.

  As indicated by the arrow 20, the magnet unit 7 reciprocates in parallel with the second surface 62 with respect to the target 6. The magnet unit 7 reciprocates or swings in the range from one end of the target 6 to the other end on the second surface 62 side of the target 6. In the present embodiment, the magnet unit 7 is provided outside the vacuum chamber 1. As a modified example, the magnet unit 7 may be provided inside the vacuum chamber 1.

  A DC power supply 4 is connected between the stage 3 and the target 6. In the magnetron sputtering apparatus 100, the target 6 becomes a cathode and the stage 3 becomes an anode. The magnetron sputtering apparatus 100 according to the present embodiment is a DC magnetron sputtering apparatus. Further, the magnetron sputtering apparatus 100 includes a deposition preventing plate 5. The adhesion preventing plate 5 can prevent particles sputtered and scattered from the target 6 from adhering to the stage 3 and the inner wall of the vacuum chamber 1.

  FIG. 2 is a perspective view of the magnet unit and the target according to the first embodiment. The direction of the reciprocating motion of the magnet unit 7 is parallel to the side surface of the target 6 as indicated by an arrow 20. As the magnet unit 7 reciprocates, the magnetic field arch 8 also moves on the first surface 61 side as indicated by the arrow 21. The rotating mechanism 30 rotates the target 6 by an angle θ with respect to the reciprocating direction of the magnet unit 7. In the present embodiment, the angle θ is 90 degrees. In FIG. 2, the vacuum chamber 1 is omitted.

  Next, a mechanism for forming a thin film in the magnetron sputtering apparatus 100 will be described. First, an inert gas is sealed in a vacuum chamber 1 on which a substrate 2 is mounted on a stage 3 and maintained at a high degree of vacuum. The inert gas is Ar, for example. Next, a voltage is applied between the target 6 and the stage 3 to generate a discharge in the inert gas and generate plasma. Inert gas ions are generated by the discharge. This inert gas ion collides with the target 6 which is a cathode. The target 6 is also called a base material.

  Particles are scattered from the target 6 by the energy of the collision of the inert gas. This particle is a material in which the material constituting the target 6 is scattered at the atomic level or in a cluster state in which atoms are gathered. The particles scattered from the target 6 are deposited on the substrate 2 placed facing the target 6. As a result, a thin film is formed on the upper surface of the substrate 2. According to this method, a fine and dense thin film can be formed on the substrate 2.

  Further, the magnetic field arch 8 can trap electrons in the vicinity of the first surface 61 of the target 6. As a result, the amount of inert gas ions generated increases. For this reason, particles scattered from the target 6 increase. Therefore, the formation speed of the thin film can be improved.

  In the magnetron sputtering apparatus 100, the magnet unit 7 reciprocates. As a result, the region having a strong magnetic field on the first surface 61 of the target 6 moves over the entire area of the first surface 61. As a result, the uniformity of the thickness of the thin film formed on the substrate 2 can be improved.

  Here, the particles scattered from the target 6 are not only incident perpendicular to the substrate 2 but also scattered in various directions. The substrate 2 is arranged so that the center of the substrate 2 and the center of the target 6 coincide. At this time, particles enter the central portion of the substrate 2 from various directions and are deposited. On the other hand, in the vicinity of the end of the substrate 2, the direction in which the particles fly may be limited due to the positional relationship with the target 6. For this reason, when the speed of the reciprocating motion of the magnet part 7 is constant, the formation speed of the thin film in the edge part of the board | substrate 2 is considered to become low compared with a center part. At this time, the film thickness distribution in the upper surface of the substrate 2 may be increased.

  On the other hand, in the present embodiment, the speed of the reciprocating motion of the magnet portion 7 is smaller at the end portion than the center portion of the reciprocating motion range. That is, the moving speed of the magnet unit 7 is reduced at a position near the end of the substrate 2. As a result, the number of particles incident on the end of the substrate 2 within a certain time increases. For this reason, the formation speed of the thin film in the edge part of the board | substrate 2 can be improved. Therefore, the film thickness distribution in the upper surface of the substrate 2 can be reduced.

  As a modified example, the magnet unit 7 may be stopped for a certain time at the turn-back point of the reciprocating motion. The speed of the reciprocating motion of the magnet unit 7 may be constant, and the magnetic field generated by the magnet unit 7 may be larger at the end than the center of the reciprocating motion range of the magnet unit 7. That is, the magnetic flux density of the magnet unit 7 increases at a position near the end of the substrate 2. For this reason, the formation speed of the thin film in the edge part of the board | substrate 2 can be improved. Therefore, the film thickness distribution in the upper surface of the substrate 2 can be reduced.

  FIG. 3 is a cross-sectional view of a magnetron sputtering apparatus according to a comparative example of the first embodiment. The magnetron sputtering apparatus 800 according to the comparative example does not include the rotation mechanism 30. Other configurations are the same as those in the first embodiment. Also in the magnetron sputtering apparatus 800 according to the comparative example, the speed of the magnet unit 7 is smaller at the end than at the center of the range of reciprocating motion.

  FIG. 4 is a diagram illustrating the degree of target consumption according to the comparative example of the first embodiment. In a portion of the target 6 that is located immediately below a region where the speed of the magnet unit 7 decreases, a period during which a strong magnetic field is applied within a certain period of time is longer than in other portions of the target 6. Therefore, the progress of the consumption of the target 6 is faster in the portion located immediately below the region where the speed of the magnet portion 7 is lower than the other portions of the target 6. Therefore, in-plane variation in the degree of wear of the target 6 occurs. The degree of wear is also called erosion.

  FIG. 4 is a diagram illustrating an example of a cross-sectional shape of the used target 6. As shown in FIG. 4, regions 810 that are consumed more than the central portion are formed on both sides of the central portion of the target 6. In the center of the target 6, the target 6 is slowly consumed and the target 6 is thick, whereas on both sides of the center of the target 6, the target 6 is greatly scraped.

  Generally, when replacing the target, the used target is peeled off from the backing plate and collected. In order to perform this operation easily, it is necessary to replace the target when the thickness of the target reaches about 20% of the initial thickness. That is, it is necessary to replace the target 6 when the thickness of the highly consumed region 810 shown in FIG. 4 becomes 20% of the initial thickness. At this time, the other part of the target 6 is thick. In spite of this, the life of the target 6 is determined by the degree of consumption of the area 810 with high consumption. For this reason, the use efficiency of the target 6 falls.

  FIG. 5 is a plan view of the target according to the first embodiment. In the present embodiment, the target 6 is a quadrangle with rounded corners. The shape of the target 6 is not limited to this. The target 6 may be a rectangle, a square, a rectangle, a polygon, a circle, or an ellipse. A set of opposite side surfaces of the target 6 are arranged in parallel with the direction of reciprocation indicated by the arrow 20. Also in the present embodiment, in the vicinity of both ends of the range of reciprocating motion indicated by the arrow 20, the first portion 10 that is more consumed than the center portion of the target 6 is formed on the first surface 61 of the target 6. . The longitudinal direction of the first portion 10 is perpendicular to the direction of reciprocation. The length of the first portion 10 in the longitudinal direction corresponds to the length of the magnet portion 7.

  Here, the magnetron sputtering apparatus 100 according to the present embodiment includes a rotation mechanism 30. For this reason, in the present embodiment, the position of the first portion 10 can be moved by rotating the target 6. FIG. 6 is a plan view showing a state after rotation of the target according to the first embodiment. The target 6 rotates in the θ direction indicated by the arrow 22. In the present embodiment, the target 6 is rotated 90 degrees. Thereby, the position of the 1st part 10 moves, and the 2nd part 11 with little consumption is arrange | positioned in the position where the 1st part 10 was arrange | positioned before rotation.

  In the present embodiment, the target 6 is a quadrangle with rounded corners. For this reason, by rotating the target 6 by 90 degrees, a portion with high wear can be replaced with a portion with low wear. The rotation angle of the target 6 may be other than 90 degrees. The rotation angle of the target 6 is desirably set to an appropriate value according to the type of the magnetron sputtering apparatus 100, the type of the target 6, and the shape of the target 6.

  In the magnetron sputtering apparatus 800 according to the comparative example, the life of the target 6 is determined by the thickness of the region 810 where the target 6 is consumed greatly. On the other hand, in the magnetron sputtering apparatus 100 according to the present embodiment, the target 6 is rotated, and the second portion 11 with less wear is disposed at the position where the first portion 10 was disposed before the rotation. Therefore, the life of the target 6 can be extended. Therefore, the utilization efficiency of the target 6 can be improved.

  Here, the length of the magnet portion 7 in the longitudinal direction is set to be smaller than the interval between the first portions 10. Further, the length of the magnet portion 7 in the longitudinal direction may be set shorter than the length of the range of reciprocating motion. Accordingly, it is possible to prevent the highly consumed first portion 10 from being included in the highly consumed region again after the target 6 is rotated. Therefore, further consumption of the target 6 in the first portion 10 with high consumption can be suppressed.

  Next, a method for manufacturing a semiconductor device using the magnetron sputtering apparatus 100 according to the present embodiment will be described. First, the magnetron sputtering apparatus 100 is prepared. Next, a mounting process is performed. In the mounting process, the substrate 2 is mounted on the upper surface 63 of the stage 3. Next, a film forming process is performed. In the film forming step, the target 6 is sputtered while the magnet unit 7 is reciprocated in parallel with the second surface 62 with respect to the target 6. The sputtered target 6 is formed on the substrate 2. Next, the target 6 is rotated 90 degrees in a plane parallel to the upper surface 63 of the stage 3. Next, a mounting process and a film forming process are performed on another substrate.

  The target 6 may be rotated when the thickness of the first portion 10 reaches a threshold value. Here, the threshold value is set to a value larger than the thickness at which the used target 6 can be peeled from the backing plate 9 and collected. For example, the threshold value is set to a value larger than 20% of the thickness of the target 6 before use. Moreover, it is good also as what rotates the target 6 for every process of replacing | exchanging the board | substrate 2 used as a process target. In this case, the first portion 10 and the second portion 11 are alternately arranged in a region where the target 6 is heavily consumed every time the processing target is exchanged. For this reason, the 1st part 10 and the 2nd part 11 are consumed equally, and the lifetime of the target 6 can be extended.

  As a modification of the present embodiment, the rotation mechanism 30 may rotate the target 6 when the integrated power amount supplied to the target 6 is greater than a threshold value. As a measure for knowing the degree of wear of the target 6, there is an integrated power amount applied to the target 6. The integrated power amount is the amount of power applied to the target 6 from the start of use of the target 6. As the integrated power amount increases, the consumption of the target 6 increases. The integrated power amount can be obtained by measuring the power supplied from the DC power source 4 to the magnetron sputtering apparatus 100.

  When the integrated power amount increases and exceeds the threshold value, the rotation mechanism 30 automatically rotates the target 6. Thereby, the labor and labor of the apparatus operator for rotating the target 6 can be reduced. In the present embodiment, the rotation mechanism 30 rotates the target 6. On the other hand, the magnetron sputtering apparatus 100 may not include the rotation mechanism 30. In this case, the rotation of the target 6 is performed manually.

  Further, in the present embodiment, the target 6 attached to the backing plate 9 rotates as the rotating mechanism 30 rotates around the rotating shaft 31. The structure of the rotation mechanism 30 is not limited to this, and another structure may be used as long as the target 6 can be rotated in a plane parallel to the upper surface 63 of the stage 3.

  These modifications can be applied as appropriate to the magnetron sputtering apparatus and the semiconductor device manufacturing method according to the following embodiments. Note that the magnetron sputtering apparatus and the semiconductor device manufacturing method according to the following embodiment have much in common with the first embodiment, and will be described with a focus on differences from the first embodiment.

Embodiment 2. FIG.
FIG. 7 is a cross-sectional view of the magnet unit according to the second embodiment. In the present embodiment, the structure of the magnet unit 207 is different from that of the first embodiment. Other structures are the same as those in the first embodiment. The magnet unit 207 according to the present embodiment includes a plurality of magnets 212. The magnet unit 207 includes three sets of magnets 212. The number of magnets 212 is not limited to this. Each of the plurality of magnets 212 rotates in the direction indicated by the arrow 223. Each of the plurality of magnets 212 rotates in a plane parallel to the second surface 62.

  The magnet 212 is a rotating magnet unit. The magnet unit 207 is a structure composed of a plurality of rotating magnet units. In this case, the magnetic field arch 208 formed by the magnet 212 reciprocates on the first surface 61 side of the target 6 while rotating in a plane parallel to the second surface 62 of the target 6. Due to the rotation of the magnetic field arch 208, the strong magnetic field portion is averaged on the first surface 61 of the target 6. Therefore, the degree of wear of the target 6 is averaged within the first surface 61 of the target 6. In the present embodiment, compared to the first embodiment, a portion where the target 6 is consumed is less likely to occur. Therefore, the life of the target 6 can be further extended and the utilization efficiency can be improved.

  In the present embodiment, each magnet 212 rotates around the midpoint between the S pole and the N pole. On the other hand, each magnet 212 may rotate around the S pole or the N pole.

Embodiment 3 FIG.
FIG. 8 is a perspective view of the magnet unit according to the third embodiment. The magnetron sputtering apparatus 300 according to the present embodiment is provided with a plurality of electromagnets 313 instead of the magnet unit 7. The plurality of electromagnets 313 are provided on the second surface 62 side of the target 6. The plurality of electromagnets 313 generate a magnetic field on the first surface 61 side of the target 6.

  Moreover, the magnetron sputtering apparatus 300 according to the present embodiment includes a control unit 340. The controller 340 controls the magnetic field generated by each of the plurality of electromagnets 313. The control unit 340 controls each electromagnet 313 to generate a magnetic field having an appropriate strength at an appropriate timing. The control unit 340 may control the magnetic flux density generated by each of the plurality of electromagnets 313.

  In FIG. 8, for convenience, the vacuum chamber 1, the substrate 2, the stage 3, and the deposition preventing plate 5 are omitted. Further, the magnetron sputtering apparatus 300 according to the present embodiment does not include the rotation mechanism 30. Other structures are the same as those in the first embodiment. In FIG. 8, the magnetron sputtering apparatus 300 includes twelve electromagnets 313. The number of electromagnets 313 is not limited to this.

  The plurality of electromagnets 313 are arranged in the first direction 324 and the second direction 325 orthogonal to the first direction 324. Here, the electromagnets 313 disposed at both ends in the first direction 324 are referred to as first electromagnets 341. In the present embodiment, two first electromagnets 341 are arranged at both ends in the first direction 324. In addition, the electromagnets 313 disposed at both ends of the second direction 325 are referred to as second electromagnets 342. In the present embodiment, three second electromagnets 342 are arranged at both ends in the second direction 325.

  The control unit 340 measures the integrated power amount supplied to the target 6. The control unit 340 controls the magnetic field generated by the first electromagnet 341 to be stronger than the magnetic field generated by the second electromagnet 342 when the integrated power amount is equal to or less than the threshold value. In addition, the control unit 340 controls the magnetic field generated by the first electromagnet 341 to be weaker than the magnetic field generated by the second electromagnet 342 when the integrated power amount is larger than the threshold.

  A method for manufacturing a semiconductor device using the magnetron sputtering apparatus 300 according to the present embodiment will be described. The mounting process is the same as in the first embodiment. Next, a film forming process is performed. In the film forming process, the target 6 is sputtered in a state where the magnetic field generated by the first electromagnet 341 is set stronger than the magnetic field generated by the second electromagnet 342. At this time, in the substrate 2 to be processed, the direction in which the sputtered particles fly is limited due to the positional relationship with the target 6, and the portion where the formation speed of the thin film tends to be slow is arranged below the first electromagnet 341. . Thereby, the formation speed of a thin film improves in the part where the direction in which particles fly is limited. Therefore, the film thickness distribution in the upper surface of the substrate 2 can be reduced.

  Next, when the integrated power amount exceeds the threshold, the magnetic field generated by the first electromagnet 341 is set to be weaker than the magnetic field generated by the second electromagnet 342. Furthermore, a portion where the direction in which the sputtered particles fly in the processing target is limited is disposed below the second electromagnet 342. Thereby, the film thickness distribution in the upper surface of the processing target can be reduced.

  In the present embodiment, the location where a strong magnetic field is applied in the target 6 is switched according to the integrated power amount applied to the target 6. The control unit 340 controls the magnetic field generated by the first electromagnet 341 to be stronger than the magnetic field generated by the second electromagnet 342 when the integrated power amount is equal to or less than the threshold value. Thereby, the consumption of the target 6 is accelerated immediately below the first electromagnet 341.

  When the integrated power amount becomes larger than the threshold value, the control unit 340 controls the magnetic field generated by the second electromagnet 342 to be stronger than the magnetic field generated by the first electromagnet 341. In other words, in the magnetron sputtering apparatus 300, a weak magnetic field is automatically formed in a portion where the target 6 is highly consumed. As a result, the consumption of the target 6 is delayed immediately below the first electromagnet 341. As a result, the further consumption of the target 6 in a portion where the consumption is large is suppressed.

  Further, when the integrated power amount becomes larger than the threshold value, a high intensity magnetic field is applied to a portion where the target 6 is less consumed. That is, the portion where the target 6 is less consumed contributes to the improvement of the thin film formation speed in the portion where the particle flying direction is limited. From the above, it is possible to extend the life of the target 6 and improve the utilization efficiency. The control unit 340 automatically controls the magnetic field generated by the electromagnet 313. For this reason, the labor and labor of the equipment operator can be reduced.

  The magnetron sputtering apparatus 300 according to the present embodiment does not require a drive unit for reciprocating the magnet unit 7 as in the first embodiment. For this reason, the risk of device failure due to deterioration of the drive unit can be reduced. Further, the magnetron sputtering apparatus 300 does not need to include the rotation mechanism 30. For this reason, the magnetron sputtering apparatus 300 can be reduced in size.

  In the present embodiment, when the integrated power amount exceeds the threshold, the electromagnet 313 that generates a strong magnetic field is switched from the first electromagnet 341 to the second electromagnet 342. As a modification, the electromagnet 313 that generates a strong magnetic field may be switched from one of the first electromagnet 341 and the second electromagnet 342 each time the processing target is exchanged.

  In the present embodiment, the first electromagnet 341 is arranged at both ends in the first direction 324. In addition, the second electromagnet 342 is disposed at both ends in the second direction 325. Here, the arrangement of the first electromagnet 341 and the second electromagnet 342 is not limited to this as long as the first electromagnet 341 and the second electromagnet 342 are different electromagnets 313. For example, among the four rows of electromagnets 313 arranged in the first direction 324, the first row and third row electromagnets 313 are the first electromagnet 341, and the second row and fourth row electromagnets 313 are the second electromagnet 342. It may be. The first electromagnet 341 and the second electromagnet 342 are selected according to the shape of the substrate 2, the shape of the magnetron sputtering apparatus 300, and the shape of the target 6.

  In the present embodiment, the electromagnets 313 are arranged in the first direction 324 and the second direction 325. The arrangement of the electromagnet 313 is not limited to this, and may be a staggered arrangement, for example. The arrangement of the electromagnet 313 is desirably set appropriately according to the type of the magnetron sputtering apparatus 300, the type of the target 6, and the shape of the target 6. The technical features described in each embodiment may be used in appropriate combination.

100, 300 Magnetron sputtering device, 1 vacuum chamber, 2 substrate, 3 stage, 6 target, 7, 207 magnet part, 30 rotating mechanism, 61 1st surface, 62 2nd surface, 63 top surface, 212 magnet, 313 electromagnet, 324 1st direction, 325 2nd direction, 340 control part, 341 1st electromagnet, 342 2nd electromagnet

Claims (8)

A vacuum chamber;
A stage that is provided inside the vacuum chamber and on which an object to be treated is mounted;
A target that is provided inside the vacuum chamber and has a first surface facing the upper surface of the stage, and a second surface that is a surface opposite to the first surface;
A magnet unit that is provided on the second surface side of the target, generates a magnetic field on the first surface side, and reciprocates in parallel with the second surface with respect to the target;
A rotation mechanism for rotating the target in a plane parallel to the upper surface of the stage;
With
The magnetron sputtering apparatus according to claim 1, wherein a speed of the reciprocating motion of the magnet portion is smaller at an end portion than a center portion of the range of the reciprocating motion.   2. The magnetron sputtering apparatus according to claim 1, wherein the rotation mechanism rotates the target when an integrated electric energy supplied to the target becomes larger than a threshold value.   The magnetron sputtering apparatus according to claim 1, wherein the rotation mechanism rotates the target by 90 degrees. The magnet unit includes a plurality of magnets,
4. The magnetron sputtering apparatus according to claim 1, wherein each of the plurality of magnets rotates in a plane parallel to the second surface. A vacuum chamber;
A stage that is provided inside the vacuum chamber and on which an object to be treated is mounted;
A target that is provided inside the vacuum chamber and has a first surface facing the upper surface of the stage, and a second surface that is a surface opposite to the first surface;
A plurality of electromagnets provided on the second surface side of the target and generating a magnetic field on the first surface side;
A control unit that controls a magnetic field generated by each of the plurality of electromagnets;
A magnetron sputtering apparatus comprising:   When the integrated power amount supplied to the target is less than or equal to a threshold, the control unit generates a magnetic field generated by a plurality of first electromagnets among the plurality of electromagnets, and a plurality of second electromagnets among the plurality of electromagnets. The magnetic field generated by the plurality of first electromagnets is weaker than the magnetic field generated by the plurality of second electromagnets when the integrated electric energy is larger than the threshold value. The magnetron sputtering apparatus according to claim 5, wherein the magnetron sputtering apparatus is controlled to be The plurality of electromagnets are arranged in a first direction and a second direction orthogonal to the first direction,
The plurality of first electromagnets are disposed at both ends in the first direction,
The magnetron sputtering apparatus according to claim 6, wherein the plurality of second electromagnets are disposed at both ends in the second direction. A vacuum chamber;
A stage provided inside the vacuum chamber;
A target provided inside the vacuum chamber and having a first surface facing the upper surface of the stage and a second surface which is a surface opposite to the first surface;
A magnet unit provided on the second surface side of the target and generating a magnetic field on the first surface side;
Preparing a magnetron sputtering apparatus comprising:
A mounting step of mounting a substrate on the upper surface of the stage;
A film forming step of sputtering the target and forming a film on the substrate while reciprocating the magnet part in parallel with the second surface with respect to the target;
After the film formation step, the target is rotated in a plane parallel to the upper surface of the stage, and the mounting step and the film formation step are performed on another substrate;
With
The method of manufacturing a semiconductor device, wherein a speed of the reciprocating motion of the magnet portion is smaller at an end portion than a center portion of the range of the reciprocating motion.

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