JP2018085496A - Light-emitting element package and light-emitting device - Google Patents
Light-emitting element package and light-emitting device Download PDFInfo
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- JP2018085496A JP2018085496A JP2016229594A JP2016229594A JP2018085496A JP 2018085496 A JP2018085496 A JP 2018085496A JP 2016229594 A JP2016229594 A JP 2016229594A JP 2016229594 A JP2016229594 A JP 2016229594A JP 2018085496 A JP2018085496 A JP 2018085496A
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- 239000012790 adhesive layer Substances 0.000 claims abstract description 69
- 239000000463 material Substances 0.000 claims abstract description 17
- 230000002093 peripheral effect Effects 0.000 claims description 53
- 239000000853 adhesive Substances 0.000 claims description 38
- 230000001070 adhesive effect Effects 0.000 claims description 38
- 239000010410 layer Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 230000031700 light absorption Effects 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000008646 thermal stress Effects 0.000 description 10
- 230000006866 deterioration Effects 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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Abstract
Description
本発明は、発光素子パッケージおよび発光装置に関する。 The present invention relates to a light emitting device package and a light emitting device.
発光ダイオード（ＬＥＤ）等の発光素子を基板上に形成した配線パターン上に複数個載置した発光装置が知られている。このような発光装置に使われる発光素子として、正電極と負電極とを主たる発光方向とは反対側の面に配置したフリップチップ型の発光ダイオードが知られている。このようなフリップチップ型の発光ダイオードは、ワイヤーボンディングが不要であり、発光がワイヤーで遮られることがないので、発光装置の発光効率の向上に寄与している。 A light-emitting device in which a plurality of light-emitting elements such as light-emitting diodes (LEDs) are mounted on a wiring pattern formed on a substrate is known. As a light emitting element used in such a light emitting device, a flip chip type light emitting diode in which a positive electrode and a negative electrode are arranged on a surface opposite to a main light emitting direction is known. Such a flip-chip type light emitting diode does not require wire bonding, and light emission is not blocked by the wire, which contributes to improvement in light emission efficiency of the light emitting device.
フリップチップ型の発光ダイオードを実装する際には、配線パターンが必要な基板上には有機系の白色樹脂が用いられることがあった。このような発光装置の輝度をさらに上げ、発光効率を高めるために、基板上の載置領域に載置したフリップチップ型の発光素子の周囲に反射枠体を配置した発光装置が知られている（特許文献１）。 When mounting a flip-chip type light emitting diode, an organic white resin may be used on a substrate requiring a wiring pattern. In order to further increase the luminance of such a light emitting device and increase the light emission efficiency, there is known a light emitting device in which a reflective frame is disposed around a flip chip type light emitting element mounted on a mounting region on a substrate. (Patent Document 1).
また、基板表面上に反射層を設けて発光ダイオードを載置するとともに、スルーホールで基板の裏面で電気的接続を行う発光ダイオードが知られている（特許文献２）。 Further, a light emitting diode is known in which a light emitting diode is placed with a reflective layer provided on the surface of the substrate, and electrical connection is made on the back surface of the substrate through a through hole (Patent Document 2).
反射部材を基板に接着する接着層に発光素子の光が照射されて、反射枠体や接着層が熱膨張するとともに、発光素子が出射した光を接着層が吸収することで、発光素子が出射した光の損失や接着層の劣化が発生している。 The light of the light emitting element is irradiated on the adhesive layer that adheres the reflective member to the substrate, the reflective frame and the adhesive layer thermally expand, and the light emitted from the light emitting element is absorbed by the adhesive layer, so that the light emitting element emits light. Loss of light or deterioration of the adhesive layer has occurred.
本発明の目的は、発光素子が出射した光を接着層が吸収することで生じる、光の損失および接着層の劣化を抑制することができる発光素子パッケージおよび、それを用いた発光装置を提供することである。 An object of the present invention is to provide a light emitting element package capable of suppressing light loss and deterioration of the adhesive layer caused by absorption of light emitted from the light emitting element, and a light emitting device using the same. That is.
本開示の発光素子パッケージは、発光素子を搭載する搭載部を第１面に有する基材と、
前記基材の前記第１面に配設される反射枠体であって、前記搭載部を、前記第１面から離れるに従って開口が大きくなるように環状に取り囲み、前記搭載部に搭載される発光素子が出射した光を反射する内周面を有する反射枠体と、
前記基材の前記第１面に設けられ、前記反射枠体を前記基材の前記第１面に接着する接着層と、を備え、
前記第１面に対向する前記反射枠体の底部の少なくとも一部に、前記第１面から離間した空間が設けられ、
前記反射枠体の前記第１面側の内周縁部は、前記第１面に当接または近接し、
前記接着層は前記空間の少なくとも一部に収容されることを特徴とする。
The light emitting device package of the present disclosure includes a base material having a mounting portion on which the light emitting device is mounted on the first surface;
A reflective frame disposed on the first surface of the substrate, wherein the mounting portion is annularly surrounded so that an opening increases as the distance from the first surface increases, and light emission mounted on the mounting portion A reflective frame having an inner peripheral surface for reflecting the light emitted from the element;
An adhesive layer that is provided on the first surface of the substrate and adheres the reflective frame to the first surface of the substrate;
A space separated from the first surface is provided in at least a part of the bottom of the reflection frame that faces the first surface,
The inner peripheral edge of the reflecting frame on the first surface side is in contact with or close to the first surface,
The adhesive layer is accommodated in at least a part of the space.
また、本開示の発光装置は、前記発光素子パッケージと、前記搭載部に搭載された発光素子と、を備える。 The light-emitting device of the present disclosure includes the light-emitting element package and a light-emitting element mounted on the mounting unit.
本開示の発光素子パッケージおよび発光装置によれば、発光素子が出射した光を接着層が吸収することで生じる、光の損失および接着層の劣化を抑制することができる。 According to the light emitting element package and the light emitting device of the present disclosure, it is possible to suppress loss of light and deterioration of the adhesive layer caused by the adhesive layer absorbing light emitted from the light emitting element.
図１および図２は、発光装置１０が導体配線９を介してモジュール基板１１に実装された状態を示す平面図および断面図である。発光装置１０は、基材２および反射枠体３を備えた発光素子パッケージ１と、発光素子パッケージ１に搭載される発光素子４とを含んで構成される。 1 and 2 are a plan view and a cross-sectional view showing a state in which the light emitting device 10 is mounted on the module substrate 11 via the conductor wiring 9. The light emitting device 10 includes a light emitting element package 1 including a base material 2 and a reflective frame 3 and a light emitting element 4 mounted on the light emitting element package 1.
本実施形態の発光素子パッケージ１について説明する。図３は第１実施形態の発光素子パッケージ１の部分断面図である。発光装置１０は発光素子パッケージ１と発光素子４とを備える。発光素子パッケージ１は、主に基材２、反射枠体３および反射枠体３を基材２に接着する接着層７で構成されている。 The light emitting device package 1 of the present embodiment will be described. FIG. 3 is a partial cross-sectional view of the light emitting device package 1 of the first embodiment. The light emitting device 10 includes a light emitting element package 1 and a light emitting element 4. The light emitting element package 1 is mainly composed of a base material 2, a reflective frame body 3, and an adhesive layer 7 that adheres the reflective frame body 3 to the base material 2.
基材２は、発光素子４を支持する支持部材として用いられ、第１面５に、発光素子４が搭載される搭載部６を有している。基材２の材料として、酸化アルミニウム質焼結体（アルミナセラミックス）や窒化アルミニウム質焼結体、ムライト質焼結体、ガラスセラミックス等のセラミックス、またはエポキシ樹脂等の樹脂から成る。たとえば窒化アルミニウムが用いられる。窒化アルミニウムは熱伝導率が高いので、発光素子４の放熱性を向上させることができる。ＵＶ−ＬＥＤ（Ultra Violet-Light Emitting Diode）はフリップチップ構造であり、絶縁層を必要としないセラミック基板が基材として好適に用いられている。 The substrate 2 is used as a support member that supports the light emitting element 4, and has a mounting portion 6 on which the light emitting element 4 is mounted on the first surface 5. The material of the base material 2 is made of an aluminum oxide sintered body (alumina ceramic), an aluminum nitride sintered body, a mullite sintered body, ceramics such as glass ceramics, or a resin such as an epoxy resin. For example, aluminum nitride is used. Since aluminum nitride has a high thermal conductivity, the heat dissipation of the light emitting element 4 can be improved. A UV-LED (Ultra Violet-Light Emitting Diode) has a flip chip structure, and a ceramic substrate that does not require an insulating layer is suitably used as a base material.
反射枠体３の材料としては、アルミニウム（Ａｌ）やＦｅ−Ｎｉ−コバルト（Ｃｏ）合金等の金属、アルミニウム質焼結体等のセラミックスまたはエポキシ樹脂等の樹脂から成り、発光素子４が出射する光を反射可能なものであれば、特に限定されない。紫外光領域から可視光領域の光に対し反射率が高いＡｌ等の金属、または白色樹脂などが用いられており、熱伝導率が高いＡｌ等の材料で形成することが好ましい。 The reflective frame 3 is made of a metal such as aluminum (Al) or Fe-Ni-cobalt (Co) alloy, a ceramic such as an aluminum sintered body, or a resin such as an epoxy resin, and the light emitting element 4 emits light. There is no particular limitation as long as it can reflect light. A metal such as Al having a high reflectance with respect to light in the ultraviolet light region to the visible light region, or a white resin is used, and it is preferably formed of a material such as Al having a high thermal conductivity.
接着層７の材料として、たとえばシリコンやエポキシ樹脂、活性ロウ材などが用いられる。接着層７は、空間３ｃの少なくとも一部に収容される。 For example, silicon, epoxy resin, or active brazing material is used as the material of the adhesive layer 7. The adhesive layer 7 is accommodated in at least a part of the space 3c.
反射枠体３は、搭載部６を環状に取り囲み、搭載部６に搭載される発光素子４が出射した光を反射する内周面３ａを有している。内周面３ａには、内周面３ａの全面に亘って反射面が形成されており、発光素子４が出射した光は内周面３ａ全面で反射されるので、光を取り出す取出効率の向上を図ることができる。なお、反射枠体３は、第１面５から離れるに従って開口が大きくなるようにしてもよい。 The reflection frame 3 surrounds the mounting portion 6 in an annular shape, and has an inner peripheral surface 3 a that reflects light emitted from the light emitting element 4 mounted on the mounting portion 6. On the inner peripheral surface 3a, a reflection surface is formed over the entire inner peripheral surface 3a, and the light emitted from the light emitting element 4 is reflected on the entire inner peripheral surface 3a, so that the extraction efficiency for extracting light is improved. Can be achieved. The reflective frame 3 may have an opening that increases as the distance from the first surface 5 increases.
第１面５に対向する反射枠体３の底部３ｂの少なくとも一部に、第１面５から離間した空間３ｃが設けられており、接着層７は空間３ｃの少なくとも一部に収容される。空間３ｃに収容された接着層７は、第１面５に対向する底壁３ｈに接着されて、反射枠体３が第１面５に配設される。 A space 3c spaced from the first surface 5 is provided in at least a part of the bottom 3b of the reflection frame 3 facing the first surface 5, and the adhesive layer 7 is accommodated in at least a part of the space 3c. The adhesive layer 7 accommodated in the space 3 c is adhered to the bottom wall 3 h facing the first surface 5, and the reflection frame 3 is disposed on the first surface 5.
反射枠体３は、空間３ｃよりも内方側に、内周面３ａに沿った環状の内周縁部３ｅを有している。内周縁部３ｅの第１面５側に位置する頂部３ｆは円環状の平面を有し、第１面５には接着されていない。破線は、熱膨張後の状態を示しており（図４〜図１４においても同様）、頂部３ｆは、反射枠体３および接着層７が熱膨張する前後において、第１面５に当接または近接している。 The reflection frame 3 has an annular inner peripheral edge 3e along the inner peripheral surface 3a on the inner side of the space 3c. The top portion 3 f located on the first surface 5 side of the inner peripheral edge portion 3 e has an annular plane and is not bonded to the first surface 5. The broken line indicates the state after thermal expansion (the same applies to FIGS. 4 to 14), and the top 3f is in contact with the first surface 5 before or after the reflective frame 3 and the adhesive layer 7 are thermally expanded. It is close.
本実施形態では、接着層７が底壁３ｈに接着される第１接着面３ｉと、接着層７が第１面５に接着される第２接着面３ｋとは、発光素子４が搭載される搭載部の中心を軸心とする半径方向（以下、「半径方向」という）Ａの長さが同一である。すなわち、接着層７の周方向に直交する断面形状が矩形である。熱膨張したとき、第２接着面３ｋに対して、第１接着面３ｉが半径方向Ａに延びた状態で、外方であって第１面から離れる方向に移動する。空間３ｃの内方側端を規定する周囲壁３ｇの内方側壁３ｍは、第１面５から離れる方向に延びた状態で外方に移動するが、熱膨張の前後において、接着層７と内方側壁３ｍとの間には隙間８を有しており、内方側壁３ｍが接着層７に接触して、接着層７に熱応力が生じることが防止される。 In the present embodiment, the light emitting element 4 is mounted on the first adhesive surface 3i where the adhesive layer 7 is adhered to the bottom wall 3h and the second adhesive surface 3k where the adhesive layer 7 is adhered to the first surface 5. The lengths in the radial direction (hereinafter referred to as “radial direction”) A centered on the center of the mounting portion are the same. That is, the cross-sectional shape orthogonal to the circumferential direction of the adhesive layer 7 is a rectangle. When thermally expanded, the second adhesive surface 3k moves outward and away from the first surface with the first adhesive surface 3i extending in the radial direction A. The inner side wall 3m of the peripheral wall 3g that defines the inner side end of the space 3c moves outward in a state of extending in a direction away from the first surface 5, but before and after thermal expansion, There is a gap 8 between the inner side wall 3m and the inner side wall 3m is in contact with the adhesive layer 7 to prevent thermal stress from being generated in the adhesive layer 7.
環状に構成された内周縁部３ｅの頂部３ｆが、全周に亘って第１面５に当接または近接しており、発光素子４が出射した紫外光や青色光などの光は、内周縁部３ｅで略遮断され、内周縁部３ｅよりも外方に位置する接着層７に、発光素子４の光が照射されることが抑制される。 The top 3 f of the inner peripheral edge 3 e configured in a ring shape is in contact with or close to the first surface 5 over the entire circumference, and light such as ultraviolet light and blue light emitted from the light emitting element 4 The light of the light emitting element 4 is suppressed from being applied to the adhesive layer 7 that is substantially blocked by the portion 3e and located outward from the inner peripheral edge portion 3e.
本実施形態では、内周縁部３ｅの頂部３ｆが第１面５に当接可能であるので、反射枠体３の荷重を、接着層７が接着された第１接着面３ｉおよび内周縁部３ｅで受けることができるので、反射枠体３の荷重を、第１接着面３ｉだけで受け、内周縁部３ｅの頂部３ｆが第１面５に当接していない場合に比べて、反射枠体３を安定した状態で第１面５に配設することができ、接着層７に熱応力が発生することを抑制することができる。 In this embodiment, since the top 3f of the inner peripheral edge 3e can contact the first surface 5, the load of the reflective frame 3 is applied to the first adhesive surface 3i to which the adhesive layer 7 is bonded and the inner peripheral edge 3e. Therefore, the load of the reflective frame 3 is received only by the first adhesive surface 3i, and the reflective frame 3 is compared with the case where the top 3f of the inner peripheral edge 3e is not in contact with the first surface 5. Can be disposed on the first surface 5 in a stable state, and generation of thermal stress in the adhesive layer 7 can be suppressed.
なお、第１接着面３ｉまたは第２接着面３ｋの半径方向Ａの長さａは、第１接着面３ｉまたは第２接着面３ｋの半径方向Ａの長さａに、隙間８の半径方向Ａの長さｂを加えた長さに対して９０％未満であることが望ましい。第１接着面３ｉまたは第２接着面３ｋの半径方向Ａの長さａが、第１接着面３ｉまたは第２接着面３ｋの半径方向Ａの長さａに、隙間８の半径方向Ａの長さｂを加えた長さに対して９０％以上であると、反射枠体３が熱膨張したとき、接着層７が周囲壁３ｇの内方側壁３ｍに接触して、接着層７が内方側壁３ｍから半径方向外方に押し出す力を受けて、接着層７に熱応力が発生することがある。さらに熱応力によって接着層が前記第１面５から剥離することがある。 Note that the length a in the radial direction A of the first adhesive surface 3i or the second adhesive surface 3k is equal to the length a in the radial direction A of the first adhesive surface 3i or the second adhesive surface 3k. It is desirable that the length is less than 90% with respect to the total length b. The length a of the first adhesive surface 3i or the second adhesive surface 3k in the radial direction A is equal to the length a of the first adhesive surface 3i or the second adhesive surface 3k in the radial direction A, and the length of the gap 8 in the radial direction A. When the reflective frame 3 is thermally expanded, the adhesive layer 7 comes into contact with the inner side wall 3m of the peripheral wall 3g so that the adhesive layer 7 is inward. Thermal stress may be generated in the adhesive layer 7 due to a force pushed outward in the radial direction from the side wall 3m. Further, the adhesive layer may peel from the first surface 5 due to thermal stress.
第１接着面３ｉまたは第２接着面３ｋの半径方向Ａの長さａは、第１接着面３ｉまたは第２接着面３ｋの半径方向Ａの長さａに、隙間８の半径方向Ａの長さｂと、内周縁部３ｅの頂部３ｆの半径方向Ａの長さｃとを加えた長さに対して２０％〜８０％であることが望ましい。第１接着面３ｉまたは第２接着面３ｋの半径方向Ａの長さａが、第１接着面３ｉまたは第２接着面３ｋの半径方向Ａの長さａに、隙間８の半径方向Ａの長さｂと、内周縁部３ｅの頂部３ｆの半径方向の長さｃとを加えた長さに対して２０％未満であると、反射枠体３が第１面５に接着される接着状態が不安定になり、接着層７を介した反射枠体３と第１面５との密着性が低下する。 The length a of the first adhesive surface 3i or the second adhesive surface 3k in the radial direction A is equal to the length a of the first adhesive surface 3i or the second adhesive surface 3k in the radial direction A, and the length of the gap 8 in the radial direction A. The length is preferably 20% to 80% with respect to a length obtained by adding the length b and the length c in the radial direction A of the top 3f of the inner peripheral edge 3e. The length a of the first adhesive surface 3i or the second adhesive surface 3k in the radial direction A is equal to the length a of the first adhesive surface 3i or the second adhesive surface 3k in the radial direction A, and the length of the gap 8 in the radial direction A. When the thickness b is less than 20% with respect to the length obtained by adding the length c in the radial direction of the top 3f of the inner peripheral edge 3e, the bonding state in which the reflective frame 3 is bonded to the first surface 5 is obtained. It becomes unstable, and the adhesion between the reflective frame 3 and the first surface 5 via the adhesive layer 7 decreases.
第１接着面３ｉまたは第２接着面３ｋの半径方向Ａの長さａが、第１接着面３ｉまたは第２接着面３ｋの半径方向Ａの長さａに、隙間８の半径方向Ａの長さｂと、内周縁部３ｅの頂部３ｆの半径方向Ａの長さｃとを加えた長さに対して８０％以上であると、接着層７が吸収する熱量が大きくなり、接着層７を介した反射枠体３と第１面５との密着性が低下する。反射枠体３の接着層７が収容される空間３ｃの、第１面から離れる方向の長さは１０〜５０μｍ程度が好ましい。 The length a of the first adhesive surface 3i or the second adhesive surface 3k in the radial direction A is equal to the length a of the first adhesive surface 3i or the second adhesive surface 3k in the radial direction A, and the length of the gap 8 in the radial direction A. The amount of heat absorbed by the adhesive layer 7 is increased when the length b and the length c of the top edge 3f of the inner peripheral edge 3e are 80% or more. The adhesiveness between the reflecting frame 3 and the first surface 5 interposed therebetween decreases. The length of the space 3c in which the adhesive layer 7 of the reflection frame 3 is accommodated in the direction away from the first surface is preferably about 10 to 50 μm.
図４および図５は第２実施形態の発光素子パッケージ１の断面図である。第１実施形態の説明と重複する部分については説明を省略し、同一の参照符を用いる。図４では、底壁３ｈに接着される接着層７の第１接着面３ｉは、接着層７の第１面５に接着される第２接着面３ｋよりも、半径方向Ａにおいて内方側に延びている。図５では、第１接着面３ｉは、内方側壁３ｍの隅部まで延びている。 4 and 5 are cross-sectional views of the light emitting device package 1 of the second embodiment. The description overlapping with the description of the first embodiment is omitted, and the same reference numerals are used. In FIG. 4, the first bonding surface 3 i of the bonding layer 7 bonded to the bottom wall 3 h is more inward in the radial direction A than the second bonding surface 3 k bonded to the first surface 5 of the bonding layer 7. It extends. In FIG. 5, the first bonding surface 3i extends to the corner of the inner side wall 3m.
このように、底壁３ｈに接着される接着層７の第１接着面３ｉの半径方向Ａの長さが大きくなると、隙間８を確保した上で、接着層７の接着強度を増大させることができる。図５に示すように、第１接着面３ｉを内方側壁３ｍの隅部まで延ばすことで、隙間８を確保した上で、さらに接着層７の接着強度を増大させて、反射枠体３と接着層７との密着性を向上させることができる。 Thus, when the length in the radial direction A of the first bonding surface 3i of the bonding layer 7 bonded to the bottom wall 3h is increased, the bonding strength of the bonding layer 7 can be increased while the gap 8 is secured. it can. As shown in FIG. 5, by extending the first bonding surface 3i to the corner of the inner side wall 3m, the gap 8 is secured and the bonding strength of the bonding layer 7 is further increased. Adhesion with the adhesive layer 7 can be improved.
本実施形態では、接着層７の内方側端面７ａが、第１面５から離れるに従って開口が狭くなるように構成されており、内方側端面７ａの第１面側端部７ｂは、内方側端面７ａの底壁側端部７ｃよりも外方側に位置している。周囲壁３ｇの内方側壁３ｍは、熱膨張によって略第１面５に直交した状態で外方に移動するので、周囲壁３ｇの内方側壁３ｍが接着層７の内方側端面７ａの第１面側端部７ｂに接触して、接着層７に熱応力が発生することを抑制することができる。 In this embodiment, the inner side end surface 7a of the adhesive layer 7 is configured such that the opening becomes narrower as the distance from the first surface 5 increases. The first surface side end portion 7b of the inner side end surface 7a It is located on the outer side of the bottom wall side end portion 7c of the side end surface 7a. Since the inner side wall 3m of the peripheral wall 3g moves outward in a state substantially orthogonal to the first surface 5 due to thermal expansion, the inner side wall 3m of the peripheral wall 3g becomes the first end of the inner side end surface 7a of the adhesive layer 7. It is possible to suppress the generation of thermal stress in the adhesive layer 7 in contact with the first surface side end portion 7b.
図６は第３実施形態の発光素子パッケージ１の断面図である。第１または第２実施形態の説明と重複する部分については説明を省略し、同一の参照符を用いる。図６に示すように、周囲壁３ｇの内方側壁３ｍは、第１面５から離れるにつれて内方側壁３ｍで囲まれた開口が大きくなるように傾斜して構成されており、内方側壁３ｍの第１面側端部３ｎは、内方側壁３ｍの底壁側端部３ｐよりも内方側に位置している。 FIG. 6 is a cross-sectional view of the light emitting device package 1 of the third embodiment. The description overlapping with the description of the first or second embodiment is omitted, and the same reference numerals are used. As shown in FIG. 6, the inner side wall 3m of the peripheral wall 3g is configured to be inclined so that the opening surrounded by the inner side wall 3m increases as the distance from the first surface 5 increases. The first surface side end portion 3n is located on the inner side of the bottom wall side end portion 3p of the inner side wall 3m.
内方側壁３ｍは、広がり角度θ１を有しており、熱膨張によって略同じ広がり角度θ１を有した状態で外方に移動するので、内方側壁３ｍの第１面側端３ｎが接着層７の第１面側端部７ｂに接触して、接着層７に熱応力が発生することをいっそう抑制することができる。 The inner side wall 3m has a spread angle θ1 and moves outward with substantially the same spread angle θ1 due to thermal expansion. Therefore, the first surface side end 3n of the inner side wall 3m is attached to the adhesive layer 7. It is possible to further suppress the generation of thermal stress in the adhesive layer 7 in contact with the first surface side end portion 7b.
図７は第４実施形態の発光素子パッケージ１の断面図である。第１〜第３実施形態の説明と重複する部分については説明を省略し、同一の参照符を用いる。反射枠体３は、空間３ｃよりも外方側に、空間３ｃに沿った環状の外周縁部３ｒを有しており、外周縁部３ｒの第１面５側に位置する頂部３ｓは円環状の平面を有し、熱膨張の前後において第１面５に接着しておらず、第１面５に当接または近接している。接着層７は図３と同様に断面が矩形である。 FIG. 7 is a cross-sectional view of the light emitting device package 1 of the fourth embodiment. The description overlapping with the description of the first to third embodiments is omitted, and the same reference numerals are used. The reflection frame 3 has an annular outer peripheral edge 3r along the space 3c on the outer side of the space 3c, and the top 3s located on the first surface 5 side of the outer peripheral edge 3r is annular. And is not bonded to the first surface 5 before and after thermal expansion, and is in contact with or close to the first surface 5. The adhesive layer 7 has a rectangular cross section as in FIG.
反射枠体３の外周部から反射枠体３に照射される光は、環状に構成され前記第１面５に当接または近接する外周縁部３ｒの頂部３ｓによって略遮られており、空間３ｃに収容された接着層７に外周部から光が照射されることが抑制される。また、このような構成によって、外周縁部３ｒは第１面５に当接可能であるので、外周縁部３ｒを有していない場合に比べて、反射枠体３を、より安定した状態で第１面５に載置することができ、接着層７に熱応力が発生することをさらに抑制することができる。 The light irradiated to the reflection frame 3 from the outer peripheral portion of the reflection frame 3 is substantially blocked by the top 3s of the outer peripheral edge 3r that is formed in an annular shape and is in contact with or close to the first surface 5. It is suppressed that light is irradiated to the adhesive layer 7 accommodated in the outer peripheral portion. Moreover, since the outer peripheral edge 3r can contact the first surface 5 by such a configuration, the reflective frame 3 can be more stable in comparison with the case where the outer peripheral edge 3r is not provided. It can be mounted on the first surface 5, and generation of thermal stress in the adhesive layer 7 can be further suppressed.
図８および図９は第５実施形態の発光素子パッケージ１の断面図である。第１〜第４実施形態の説明と重複する部分については説明を省略し、同一の参照符を用いる。図８では、底壁３ｈに接着される接着層７の第１接着面３ｉは、接着層７の前記第１面５に接着される第２接着面３ｋよりも、半径方向Ａにおいて外方側に延びている。図９では、周囲壁３ｇは、空間３ｃの半径方向Ａであって外方側端を規定する外方側壁３ｔを有しており、第１接着面３ｉは、外方側壁３ｔの隅部まで延びている。 8 and 9 are cross-sectional views of the light emitting device package 1 of the fifth embodiment. The description overlapping with the description of the first to fourth embodiments is omitted, and the same reference numerals are used. In FIG. 8, the first adhesive surface 3i of the adhesive layer 7 bonded to the bottom wall 3h is more outward in the radial direction A than the second adhesive surface 3k bonded to the first surface 5 of the adhesive layer 7. It extends to. In FIG. 9, the peripheral wall 3g has an outer side wall 3t that defines the outer end in the radial direction A of the space 3c, and the first adhesive surface 3i extends to the corner of the outer side wall 3t. It extends.
底壁３ｈに接着される接着層７の第１接着面３ｉの半径方向Ａの長さが大きくなり、接着層７の接着強度を増大させることができる。図９に示すように、第１接着面３ｉを外方側壁３ｔの隅部まで延ばすことで、さらに接着層７の接着強度を増大させて反射枠体３と接着層７との密着性を向上させることができる。 The length in the radial direction A of the first bonding surface 3i of the bonding layer 7 bonded to the bottom wall 3h is increased, and the bonding strength of the bonding layer 7 can be increased. As shown in FIG. 9, by extending the first adhesive surface 3i to the corner of the outer side wall 3t, the adhesive strength of the adhesive layer 7 is further increased to improve the adhesion between the reflective frame 3 and the adhesive layer 7. Can be made.
本実施形態では、接着層７の外方側端面７ｆが、第１面５から離れるに従って開口が大きくなるように構成されており、外方側端面７ｆの第１面側端部７ｇは、外方側端面７ｆの底壁側端部７ｈよりも内方側に位置している。周囲壁３ｇの外方側壁３ｔは、熱膨張によって略第１面５に直交した状態で外方に移動するので、周囲壁３ｇの外方側壁３ｔが外方側端面７ｆの第１面側端部７ｇに接触して、接着層７に熱応力が発生することを抑制することができる。 In the present embodiment, the outer side end surface 7f of the adhesive layer 7 is configured such that the opening increases as the distance from the first surface 5 increases. The first surface side end portion 7g of the outer side end surface 7f It is located inward from the bottom wall side end portion 7h of the side end surface 7f. Since the outer side wall 3t of the peripheral wall 3g moves outward in a state substantially orthogonal to the first surface 5 due to thermal expansion, the outer side wall 3t of the peripheral wall 3g becomes the first surface side end of the outer side end surface 7f. It can suppress that a thermal stress generate | occur | produces in the contact bonding layer 7 in contact with the part 7g.
図１０は第６実施形態の発光素子パッケージ１の断面図である。第１〜第５実施形態の説明と重複する部分については説明を省略し、同一の参照符を用いる。図１０に示すように、周囲壁３ｇの外方側壁３ｔは、第１面５から離れるにつれて外方側壁３ｔで囲まれた開口が小さくなるように構成されており、外方側壁３ｔの第１面側端部３ｕは、外方側壁３ｔの底壁側端部３ｖよりも外方側に位置している。外方側壁３ｔは、広がり角度θ２を有しており、熱膨張の前後において略同じ広がり角度θ２を有した状態で外方に移動するので、外方側壁３ｔの第１面側端部３ｕが接着層７の第１面側端部７ｇに接触して、接着層７に熱応力が発生することをいっそう抑制することができる。 FIG. 10 is a cross-sectional view of the light emitting device package 1 of the sixth embodiment. The description overlapping with the description of the first to fifth embodiments is omitted, and the same reference numerals are used. As shown in FIG. 10, the outer side wall 3t of the peripheral wall 3g is configured such that the opening surrounded by the outer side wall 3t becomes smaller as the distance from the first surface 5 increases. The surface side end portion 3u is located on the outer side of the bottom wall side end portion 3v of the outer side wall 3t. The outer side wall 3t has a spread angle θ2, and moves outward with substantially the same spread angle θ2 before and after thermal expansion, so that the first surface side end 3u of the outer side wall 3t is It is possible to further suppress the occurrence of thermal stress in the adhesive layer 7 in contact with the first surface side end portion 7 g of the adhesive layer 7.
図１１は第７実施形態の発光素子パッケージ１の断面図である。第１〜第６実施形態の説明と重複する部分については説明を省略し、同一の参照符を用いる。接着層１７は、断面視で球状であって、環状に配置されたものとすることができる。図１１では断面形状が円形であるが、断面形状は真円形状でも楕円形状でもよい。このようにすると、接着層１７が周囲壁３ｇの底壁３ｈに接着する接着面積を小さくすることができ、熱膨張したときに、接着層１７に生じる熱応力を抑制することができる。また、接着層１７を球体によって構成することで、半径方向Ａの接着層７の長さを小さくすることができ、発光素子パッケージ１をコンパクトにすることができる。 FIG. 11 is a cross-sectional view of the light emitting device package 1 of the seventh embodiment. The description overlapping with the description of the first to sixth embodiments is omitted, and the same reference numerals are used. The adhesive layer 17 has a spherical shape in a cross-sectional view and may be arranged in an annular shape. Although the cross-sectional shape is circular in FIG. 11, the cross-sectional shape may be a perfect circle shape or an elliptical shape. If it does in this way, the adhesion area which adhesion layer 17 adheres to bottom wall 3h of peripheral wall 3g can be made small, and the thermal stress which arises in adhesion layer 17 when thermally expanded can be controlled. Moreover, by comprising the contact bonding layer 17 with a spherical body, the length of the contact bonding layer 7 of the radial direction A can be made small, and the light emitting element package 1 can be made compact.
図１２は第８実施形態の発光素子パッケージ１の断面図である。第１〜第７実施形態の説明と重複する部分については説明を省略し、同一の参照符を用いる。本実施形態において、第１面５と対向する反射枠体１３の底部１３ｂには、内周面１３ａの第１面５側縁部に連続して設けられ、外方に向かって第１面との距離が大きくなる傾斜底面１３ｗが設けられている。傾斜底面１３ｗには、第１面５と接着される接着層１７が接着する第３接着面１３ｘが設けられている。第３接着面１３ｘよりも内方側には、内周面１３ａに沿って環状に構成される内周縁部１３ｙが設けられている。内周縁部１３ｙは、内周面１３ａと傾斜底面１３ｗとによって規定され、先細の環状の頂部１３ｚが第１面５に当接または近接する。 FIG. 12 is a cross-sectional view of the light emitting device package 1 of the eighth embodiment. The description overlapping with the description of the first to seventh embodiments is omitted, and the same reference numerals are used. In the present embodiment, the bottom portion 13b of the reflective frame 13 facing the first surface 5 is provided continuously to the edge of the inner peripheral surface 13a on the first surface 5 side, and the first surface faces outward. An inclined bottom surface 13w that increases the distance is provided. The inclined bottom surface 13w is provided with a third bonding surface 13x to which the bonding layer 17 bonded to the first surface 5 is bonded. An inner peripheral edge portion 13y that is annularly formed along the inner peripheral surface 13a is provided on the inner side of the third adhesive surface 13x. The inner peripheral edge portion 13 y is defined by the inner peripheral surface 13 a and the inclined bottom surface 13 w, and the tapered annular top portion 13 z abuts or approaches the first surface 5.
本実施形態では、外方に向かって第１面５から離れる傾斜底面１３ｗを有しているので、接着層１７が接着される第３接着面１３ｘを底面１３ｗに直接設けることができる。傾斜底面１３ｗは反射枠体１３の底部１３ｂ全体で構成されており、第３接着面１３ｘを広くして、接着層１７が反射枠体１３に密着する密着強度を増大させることができる。 In this embodiment, since it has the inclination bottom face 13w which leaves | separates from the 1st surface 5 toward outward, the 3rd adhesion surface 13x to which the contact bonding layer 17 is adhere | attached can be directly provided in the bottom face 13w. The inclined bottom surface 13w is composed of the entire bottom portion 13b of the reflection frame 13, and the third adhesion surface 13x can be widened to increase the adhesion strength at which the adhesive layer 17 is in close contact with the reflection frame 13.
図１３および図１４は、第９実施形態の発光素子パッケージの部分断面図である。基体２は、第１面５の第２接着面３ｋに、反射枠体３の第１面５側の内周縁部３ｅ、または反射枠体１３の第１面５側の内周縁部１３ｙを環状に取り囲む凸部２１，２２を有していてもよい。このようにすることで、第１面５から接着層７，１７を前記凸部２１，２２の高さの分だけ高く設けることができ、基材２の第１面５と反射枠体３、１３の内周縁部３ｅ、１３ｙの当接した所から空間３ｃ，１３ｃに光が侵入しても、前記凸部２１，２２で反射され接着層７，１７に照射されにくくなるため、接着層７，１７による光の吸収や接着層７、１７の劣化を抑制する。 13 and 14 are partial cross-sectional views of the light emitting device package of the ninth embodiment. In the base 2, the inner peripheral edge 3 e on the first surface 5 side of the reflective frame 3 or the inner peripheral edge 13 y on the first surface 5 side of the reflective frame 13 is annularly formed on the second adhesive surface 3 k of the first surface 5. You may have the convex parts 21 and 22 which surround. By doing so, the adhesive layers 7 and 17 can be provided higher from the first surface 5 by the height of the convex portions 21 and 22, and the first surface 5 of the substrate 2 and the reflective frame 3 Even if light enters the spaces 3c and 13c from the place where the inner peripheral edge portions 3e and 13y contact, the adhesive layers 7 and 17 are not reflected and are not easily irradiated to the adhesive layers 7 and 17. , 17 to suppress light absorption and deterioration of the adhesive layers 7, 17.
図１５〜１８は、発光装置を説明するための図である。 15-18 is a figure for demonstrating a light-emitting device.
図１５は、第１放熱部材１２に固定された発光装置１０を概略的に示す平面図であり、図１６は、第１放熱部材１２に固定された発光装置１０を概略的に示す断面図である。発光装置１０は、Ａｌ等で形成された放熱部材１２にねじ止めされている。放熱部材１２には、複数の放熱用フィン１５が設けられており、発光装置１０が発生した熱は、放熱用フィン１５から放射される。 FIG. 15 is a plan view schematically showing the light emitting device 10 fixed to the first heat radiating member 12, and FIG. 16 is a cross-sectional view schematically showing the light emitting device 10 fixed to the first heat radiating member 12. is there. The light emitting device 10 is screwed to a heat dissipation member 12 made of Al or the like. The heat radiating member 12 is provided with a plurality of heat radiating fins 15, and the heat generated by the light emitting device 10 is radiated from the heat radiating fins 15.
図１７は、第２放熱部材１６に固定された発光装置１４を概略的に示す平面図であり、図１８は、第２放熱部材１６に固定された発光装置１４を概略的に示す断面図である。
発光装置１４は、複数の発光素子パッケージ１が、導体配線１８を介してモジュール基板２０に実装されて構成される。発光装置１４は、Ｃｕ，Ａｌ等で形成された第２放熱部材１６にねじ止めされている。第２放熱部材１６の内部には図１７の平面図でＵ字状の水冷管１９が設けられており、発光装置１４が発生した熱は第２放熱部材１６を介して水冷管１９を流れる水に伝達される。なお図１８では、図解を容易にするため、水冷管１９が、流入側流路と流出側流路とを上下にずらして模式的に示されている。
FIG. 17 is a plan view schematically showing the light emitting device 14 fixed to the second heat radiating member 16, and FIG. 18 is a cross-sectional view schematically showing the light emitting device 14 fixed to the second heat radiating member 16. is there.
The light emitting device 14 is configured by mounting a plurality of light emitting element packages 1 on a module substrate 20 via conductor wirings 18. The light emitting device 14 is screwed to a second heat radiating member 16 made of Cu, Al or the like. A U-shaped water cooling tube 19 in the plan view of FIG. 17 is provided inside the second heat radiating member 16, and the heat generated by the light emitting device 14 flows through the water cooling tube 19 through the second heat radiating member 16. Is transmitted to. In FIG. 18, for easy illustration, the water-cooled pipe 19 is schematically shown by shifting the inflow side flow path and the outflow side flow path up and down.
１ 発光素子パッケージ
２ 基材
３，１３ 反射枠体
３ａ 内周面
３ｂ 底部
３ｃ，１３ｃ 空間
３ｅ，１３ｙ 内周縁部
３ｆ，３ｓ，１３ｚ 頂部
３ｇ 周囲壁
３ｈ 底壁
３ｉ 第１接着面
３ｋ 第２接着面
３ｍ 内方側壁
３ｎ （内方側壁の）第１面側端部
３ｐ （内方側壁の）底壁側端部
３ｒ 外周縁部
３ｔ 外方側壁
３ｕ （外方側壁の）第１面側端部
３ｖ （外方側壁の）底壁側端部
４ 発光素子
５ 第１面
６ 搭載部
７，１７ 接着層
７ａ 内方側端面
７ｂ （接着層の内方側端面の）第１面側端部
７ｃ （接着層の内方側端面の）底壁側端部
７ｆ 外方側端面
７ｇ （接着層の外方側端面の）第１面側端部
７ｈ （接着層の外方側端面の）底壁側端部
８ 隙間
９，１８ 導体配線
１０，１４ 発光装置
１１，２０ モジュール基板
１２ 第１放熱部材
１３ｗ 傾斜底面
１３ｘ 第３接着面
１３ｙ 内周縁部
１５ フィン
１６ 第２放熱部材
１９ 水冷管
２１，２２ 凸部
DESCRIPTION OF SYMBOLS 1 Light emitting element package 2 Base material 3,13 Reflection frame 3a Inner peripheral surface 3b Bottom part 3c, 13c Space 3e, 13y Inner peripheral part 3f, 3s, 13z Top part 3g Peripheral wall 3h Bottom wall 3i 1st adhesion surface 3k 2nd adhesion Surface 3m Inner side wall 3n First surface side end 3p (inner side wall) Bottom wall side end 3r Outer peripheral edge 3t Outer side wall 3u (outer side wall) First surface side end 3v (outside side wall) bottom wall side end 4 light emitting element 5 first surface 6 mounting portion 7, 17 adhesive layer 7a inner side end surface 7b (first inner side end surface of adhesive layer) 7c (on the inner end surface of the adhesive layer) bottom wall side end portion 7f outer side end surface 7g (first outer surface end surface of the adhesive layer) first surface side end portion 7h (outer side end surface of the adhesive layer) bottom Wall side end 8 Clearance 9, 18 Conductor wiring 10, 14 Light emitting device 11, 20 Module substrate 12 First heat radiating member 3w inclined bottom surface 13x third adhesive surface 13y inside periphery 15 the fin 16 second heat radiating member 19 cooling water pipe 21, 22 protrusion
Claims (12)
前記基材の前記第１面に配設される反射枠体であって、前記搭載部を環状に取り囲み、前記搭載部に搭載される発光素子が出射した光を反射する内周面を有する反射枠体と、
前記基材の前記第１面に設けられ、前記反射枠体を前記基材の前記第１面に接着する接着層と、を備え、
前記第１面に対向する前記反射枠体の底部の少なくとも一部に、前記第１面から離間した空間が設けられ、
前記反射枠体の前記第１面側の内周縁部は、前記第１面に当接または近接し、
前記接着層は前記空間の少なくとも一部に収容されることを特徴とする発光素子パッケージ。 A base material having a mounting portion on the first surface for mounting the light emitting element;
A reflection frame disposed on the first surface of the base material, the reflection frame having an inner circumferential surface that surrounds the mounting portion in an annular shape and reflects light emitted from a light emitting element mounted on the mounting portion. A frame,
An adhesive layer that is provided on the first surface of the substrate and adheres the reflective frame to the first surface of the substrate;
A space separated from the first surface is provided in at least a part of the bottom of the reflection frame that faces the first surface,
The inner peripheral edge of the reflecting frame on the first surface side is in contact with or close to the first surface,
The light emitting device package, wherein the adhesive layer is accommodated in at least a part of the space.
前記底壁に接着される前記接着層の第１接着面は、前記接着層の前記第１面に接着される第２接着面よりも、前記搭載部の中心を軸心とする半径方向Ａにおいて内方側に延びていることを特徴とする請求項１に記載の発光素子パッケージ。 The adhesive layer is bonded to a bottom wall facing the first surface among the peripheral walls of the reflective frame body that defines the space;
The first adhesive surface of the adhesive layer bonded to the bottom wall is in a radial direction A centering on the center of the mounting portion, rather than the second adhesive surface bonded to the first surface of the adhesive layer. The light emitting device package according to claim 1, wherein the light emitting device package extends inward.
前記第１接着面は、前記内方側壁の隅部まで延びていることを特徴とする請求項２に記載の発光素子パッケージ。 The peripheral wall has an inner side wall that defines an inner side end of the space;
The light emitting device package according to claim 2, wherein the first adhesive surface extends to a corner of the inner side wall.
前記第１接着面は、前記外方側壁の隅部まで延びていることを特徴とする請求項２に記載の発光素子パッケージ。 The peripheral wall has an outer side wall that defines an outer side end in the radial direction A of the space;
The light emitting device package according to claim 2, wherein the first adhesive surface extends to a corner of the outer side wall.
前記接着層は前記傾斜底面と前記第１面とに挟まれた空間に収容されていることを特徴とする請求項１に記載の発光素子パッケージ。 The bottom portion of the reflection frame that faces the first surface is configured by an inclined bottom surface that increases the distance from the first surface toward the outside.
The light emitting device package according to claim 1, wherein the adhesive layer is accommodated in a space sandwiched between the inclined bottom surface and the first surface.
前記搭載部に搭載された発光素子と、を備えた発光装置。 The light emitting device package according to any one of claims 1 to 10,
And a light emitting device mounted on the mounting portion.
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