JP2018073452A - Dram基盤のプロセシングユニット - Google Patents
Dram基盤のプロセシングユニット Download PDFInfo
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- JP2018073452A JP2018073452A JP2017193447A JP2017193447A JP2018073452A JP 2018073452 A JP2018073452 A JP 2018073452A JP 2017193447 A JP2017193447 A JP 2017193447A JP 2017193447 A JP2017193447 A JP 2017193447A JP 2018073452 A JP2018073452 A JP 2018073452A
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- G11C—STATIC STORES
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- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
- G06F13/1668—Details of memory controller
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
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- Dram (AREA)
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Abstract
Description
101a〜101m、105a〜105n バンク
102a〜102n サブアレイ
103 バッファ
104 システムバス
105、105a〜105n、109 マット(レーン)
106 データセルアレイ
107 コンピューティングセルアレイ
107a〜107d コンピューティングセル
108 イントラマットシフトアレイ
110 データセルアレイデコーダー
111 コンピューティングセルアレイデコーダー
112 インターマットシフトアレイ
112e、112f データシフトライン
113 インターマットフォワーディングアレイ
113g 第1データフォワーディングライン
113h 第2データフォワーディングライン
114 サブアレイコントローラ
201、202 DRAMコンピューティングセルトポグラフィ
715 確率的データアレイ
716 コンバーターツー確率アレイ
900 システム構造
910 ハードウェアレイヤー
911 PCIe
912 DIMM
920 ライブラリ及びドライバーレイヤー
921 DPUライブラリ
922 DPUドライバー
923 DPUコンパイラ
930 フレームワークレイヤー
940 アプリケーションレイヤー
Claims (9)
- DPU(Dynamic Random Access Memory Processing Unit)であって、
少なくとも1つのカラムを含むアレイ内に配置された複数のDRAM基盤のコンピューティングセルを含む少なくとも1つのコンピューティングセルアレイを備え、
前記少なくとも1つのカラムは、少なくとも3つのローのDRAM基盤のコンピューティングセルを含み、
前記少なくとも3つのローのDRAM基盤のコンピューティングセルは、前記少なくとも3つのローの第1ロー及び第2ロー上で動作するロジック機能を提供し、前記少なくとも3つのローの第3ロー内に前記ロジック機能の結果を格納することを特徴とするDPU。 - 少なくとも1つのカラム内に配置された少なくとも1つのDRAM基盤のメモリセルを含む少なくとも1つのデータセルアレイと、
前記少なくとも3つのローのDRAM基盤のコンピューティングセルの読出しビットラインに電気的に連結された入力、及び前記少なくとも3つのローのDRAM基盤のコンピューティングセルの書込みビットラインに電気的に連結された出力を含むセンスアンプと、を更に含むことを特徴とする請求項1に記載のDPU。 - DPU(Dynamic Random Access Memory Processing Unit)であって、
少なくとも1つのカラムを含むアレイ内に配置された複数のDRAM基盤のコンピューティングセルを含む少なくとも1つのコンピューティングセルアレイと、
少なくとも1つのカラム内に配置された少なくとも1つのDRAM基盤のメモリセルを含む少なくとも1つのデータセルアレイと、を備え、
前記少なくとも1つのカラムは、少なくとも3つのローのDRAM基盤のコンピューティングセルを含み、
前記少なくとも3つのローのDRAM基盤のコンピューティングセルは、前記少なくとも3つのローの第1ロー及び第2ロー上で動作するロジック機能を提供し、前記少なくとも3つのローの第3ロー内に前記ロジック機能の結果を格納することを特徴とするDPU。 - DPU(Dynamic Random Access Memory Processing Unit)であって、
少なくとも1つのカラム内に配置された少なくとも1つのDRAM基盤のメモリセルを含む少なくとも1つのデータセルアレイと、
少なくとも3つのローのDRAM基盤のコンピューティングセルを含む少なくとも1つのカラムを含むアレイ内に配置された複数のDRAM基盤のコンピューティングセルを含む少なくとも1つのコンピューティングセルアレイと、
前記少なくとも3つのローのDRAM基盤のコンピューティングセルの読出しビットラインに電気的に連結された入力、及び前記少なくとも3つのローのDRAM基盤のコンピューティングセルの書込みビットラインに電気的に連結された出力を含むセンスアンプと、
前記少なくとも3つのローのDRAM基盤のコンピューティングセルに電気的に連結されたデコーダーと、を備え、
前記少なくとも3つのローのDRAM基盤のコンピューティングセルは、前記少なくとも3つのローの第1ロー及び第2ロー上で動作するロジック機能を提供し、前記少なくとも3つのローの第3ロー内に前記ロジック機能の結果を格納し、
前記デコーダーは、前記第1ロー及び第2ロー上で前記ロジック機能を生成し、前記第3ロー内に前記ロジック機能の結果を格納するために、前記少なくとも3つのローのDRAM基盤のコンピューティングセルを選択するための命令に対応するDRAM基盤のアドレス信号を受信することを特徴とするDPU。 - 前記少なくとも1つのカラムの前記DRAM基盤のコンピューティングセルの各々は、3つのトランジスタ及び1つのキャパシターを含むDRAMメモリセルを含むことを特徴とする請求項1、3、又は4に記載のDPU。
- 前記少なくとも1つのカラムの前記DRAM基盤のコンピューティングセルは、NORロジック機能を提供することを特徴とする請求項5に記載のDPU。
- 前記少なくとも1つのカラムの前記DRAM基盤のコンピューティングセルの各々は、1つのトランジスタ及び1つのキャパシターを含むDRAMメモリセルを含むことを特徴とする請求項1、3、又は4に記載のDPU。
- 前記DRAM基盤のコンピューティングセルの各々は、前記DRAM基盤のコンピューティングセルのビットラインに連結されたALU(Arithmetic Logic Unit)を更に含み、
前記ALUは、前記ロジック機能を提供することを特徴とする請求項7に記載のDPU。 - 前記ALUは、NORロジック機能を提供することを特徴とする請求項8に記載のDPU。
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US201662414426P | 2016-10-28 | 2016-10-28 | |
US62/414,426 | 2016-10-28 | ||
US15/425,996 US9922696B1 (en) | 2016-10-28 | 2017-02-06 | Circuits and micro-architecture for a DRAM-based processing unit |
US15/425,996 | 2017-02-06 |
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JP2018073452A true JP2018073452A (ja) | 2018-05-10 |
JP2018073452A5 JP2018073452A5 (ja) | 2020-10-22 |
JP6785738B2 JP6785738B2 (ja) | 2020-11-18 |
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JP (1) | JP6785738B2 (ja) |
KR (1) | KR102182217B1 (ja) |
CN (1) | CN108022615B (ja) |
TW (1) | TWI713047B (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10180808B2 (en) * | 2016-10-27 | 2019-01-15 | Samsung Electronics Co., Ltd. | Software stack and programming for DPU operations |
US10628295B2 (en) * | 2017-12-26 | 2020-04-21 | Samsung Electronics Co., Ltd. | Computing mechanisms using lookup tables stored on memory |
US10956814B2 (en) * | 2018-08-27 | 2021-03-23 | Silicon Storage Technology, Inc. | Configurable analog neural memory system for deep learning neural network |
TWI714003B (zh) * | 2018-10-11 | 2020-12-21 | 力晶積成電子製造股份有限公司 | 可執行人工智慧運算的記憶體晶片及其操作方法 |
CN110414677B (zh) * | 2019-07-11 | 2021-09-03 | 东南大学 | 一种适用于全连接二值化神经网络的存内计算电路 |
US11354383B2 (en) | 2019-09-27 | 2022-06-07 | Applied Materials, Inc | Successive bit-ordered binary-weighted multiplier-accumulator |
US11081149B1 (en) | 2020-03-31 | 2021-08-03 | Winbond Electronics Corp. | Memory device for artificial intelligence operation |
KR20220142875A (ko) | 2021-04-15 | 2022-10-24 | 에스케이하이닉스 주식회사 | 인메모리 연산을 수행하는 반도체 장치 및 그 동작 방법 |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4955020A (en) * | 1989-06-29 | 1990-09-04 | Infotron Systems Corporation | Bus architecture for digital communications |
EP0689712A4 (en) * | 1993-03-17 | 1997-05-28 | Zycad Corp | CONFIGURABLE FIELDS WITH DIRECT ACCESS MEMORY ARRANGEMENT |
US6173385B1 (en) | 1993-11-19 | 2001-01-09 | Disk Emulation Systems, Inc. | Address generator for solid state disk drive |
US6195738B1 (en) | 1993-12-12 | 2001-02-27 | Associative Computing Ltd. | Combined associative processor and random access memory architecture |
US5847577A (en) * | 1995-02-24 | 1998-12-08 | Xilinx, Inc. | DRAM memory cell for programmable logic devices |
US5901095A (en) | 1997-12-23 | 1999-05-04 | Lsi Logic Corporation | Reprogrammable address selector for an embedded DRAM |
JPH11338767A (ja) * | 1998-05-22 | 1999-12-10 | Mitsubishi Heavy Ind Ltd | 画像処理用機能メモリ装置 |
US6467020B1 (en) * | 2000-05-17 | 2002-10-15 | Neomagic Israel Ltd. | Combined associate processor and memory architecture |
TW514931B (en) | 2000-09-29 | 2002-12-21 | Agilent Technologies Inc | Apparatus and method for performing conditional calculations |
US6947348B2 (en) * | 2003-07-15 | 2005-09-20 | International Business Machines Corporation | Gain cell memory having read cycle interlock |
US7299099B1 (en) | 2004-02-18 | 2007-11-20 | Divelbiss Corporation | Programmable logic controller contained on a chip |
JP2006127460A (ja) * | 2004-06-09 | 2006-05-18 | Renesas Technology Corp | 半導体装置、半導体信号処理装置、およびクロスバースイッチ |
US20070226567A1 (en) | 2006-03-23 | 2007-09-27 | Gorman Kevin W | High speed bist utilizing clock multiplication |
CA2645781C (en) * | 2006-12-22 | 2011-04-12 | Sidense Corp. | Dual function data register |
US8120989B2 (en) | 2007-06-25 | 2012-02-21 | Qualcomm Incorporated | Concurrent multiple-dimension word-addressable memory architecture |
US8042082B2 (en) | 2007-09-12 | 2011-10-18 | Neal Solomon | Three dimensional memory in a system on a chip |
US8631195B1 (en) * | 2007-10-25 | 2014-01-14 | Netlogic Microsystems, Inc. | Content addressable memory having selectively interconnected shift register circuits |
US8341362B2 (en) * | 2008-04-02 | 2012-12-25 | Zikbit Ltd. | System, method and apparatus for memory with embedded associative section for computations |
US8332580B2 (en) * | 2008-04-02 | 2012-12-11 | Zikbit Ltd. | System, method and apparatus for memory with embedded associative section for computations |
US10832746B2 (en) * | 2009-07-16 | 2020-11-10 | Gsi Technology Inc. | Non-volatile in-memory computing device |
US20120246380A1 (en) | 2009-10-21 | 2012-09-27 | Avidan Akerib | Neighborhood operations for parallel processing |
US9026714B2 (en) | 2010-06-04 | 2015-05-05 | Cisco Technology, Inc. | Memory expansion using rank aggregation |
TWI571058B (zh) * | 2011-05-18 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置與驅動半導體裝置之方法 |
CN103907157B (zh) * | 2011-10-28 | 2017-10-17 | 慧与发展有限责任合伙企业 | 进行行移位的可移位存储器 |
WO2013115778A1 (en) * | 2012-01-30 | 2013-08-08 | Hewlett-Packard Development Company, L.P. | Dynamic/static random access memory (d/sram) |
KR101990971B1 (ko) | 2012-01-30 | 2019-06-19 | 삼성전자 주식회사 | 메모리, 메모리 시스템, 및 메모리에 대한 에러 검출/정정 방법 |
US9317482B2 (en) | 2012-10-14 | 2016-04-19 | Microsoft Technology Licensing, Llc | Universal FPGA/ASIC matrix-vector multiplication architecture |
US9378181B2 (en) | 2012-11-09 | 2016-06-28 | Intel Corporation | Scalable computing array |
US9197285B2 (en) | 2012-12-20 | 2015-11-24 | Deere & Company | Methods and apparatus for ameliorating signal reception |
US9153305B2 (en) * | 2013-08-30 | 2015-10-06 | Micron Technology, Inc. | Independently addressable memory array address spaces |
US9639458B2 (en) | 2013-09-26 | 2017-05-02 | Emu Solutions, Inc. | Reducing memory accesses for enhanced in-memory parallel operations |
US9934856B2 (en) * | 2014-03-31 | 2018-04-03 | Micron Technology, Inc. | Apparatuses and methods for comparing data patterns in memory |
US9455020B2 (en) | 2014-06-05 | 2016-09-27 | Micron Technology, Inc. | Apparatuses and methods for performing an exclusive or operation using sensing circuitry |
US9711206B2 (en) * | 2014-06-05 | 2017-07-18 | Micron Technology, Inc. | Performing logical operations using sensing circuitry |
US9847110B2 (en) * | 2014-09-03 | 2017-12-19 | Micron Technology, Inc. | Apparatuses and methods for storing a data value in multiple columns of an array corresponding to digits of a vector |
US20160147667A1 (en) | 2014-11-24 | 2016-05-26 | Samsung Electronics Co., Ltd. | Address translation in memory |
US9954533B2 (en) * | 2014-12-16 | 2018-04-24 | Samsung Electronics Co., Ltd. | DRAM-based reconfigurable logic |
US10996959B2 (en) * | 2015-01-08 | 2021-05-04 | Technion Research And Development Foundation Ltd. | Hybrid processor |
US9697877B2 (en) * | 2015-02-05 | 2017-07-04 | The Board Of Trustees Of The University Of Illinois | Compute memory |
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CN108022615B (zh) | 2023-03-28 |
US9922696B1 (en) | 2018-03-20 |
TWI713047B (zh) | 2020-12-11 |
JP6785738B2 (ja) | 2020-11-18 |
TW201816785A (zh) | 2018-05-01 |
KR20180046846A (ko) | 2018-05-09 |
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KR102182217B1 (ko) | 2020-11-25 |
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