JP2018067591A - Polishing agent composition for nitride semiconductor substrate - Google Patents
Polishing agent composition for nitride semiconductor substrate Download PDFInfo
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- JP2018067591A JP2018067591A JP2016204238A JP2016204238A JP2018067591A JP 2018067591 A JP2018067591 A JP 2018067591A JP 2016204238 A JP2016204238 A JP 2016204238A JP 2016204238 A JP2016204238 A JP 2016204238A JP 2018067591 A JP2018067591 A JP 2018067591A
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- 238000005498 polishing Methods 0.000 title claims abstract description 90
- 239000000203 mixture Substances 0.000 title claims abstract description 58
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 title claims abstract description 40
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 36
- 239000003795 chemical substances by application Substances 0.000 title abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 239000002253 acid Substances 0.000 claims abstract description 36
- 150000003839 salts Chemical class 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000001301 oxygen Substances 0.000 claims abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
- 239000006061 abrasive grain Substances 0.000 claims abstract description 9
- MEFBJEMVZONFCJ-UHFFFAOYSA-N molybdate Chemical compound [O-][Mo]([O-])(=O)=O MEFBJEMVZONFCJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- VLAPMBHFAWRUQP-UHFFFAOYSA-L molybdic acid Chemical compound O[Mo](O)(=O)=O VLAPMBHFAWRUQP-UHFFFAOYSA-L 0.000 claims abstract description 6
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 claims abstract description 4
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 claims abstract description 4
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 claims abstract description 4
- WQEVDHBJGNOKKO-UHFFFAOYSA-K vanadic acid Chemical compound O[V](O)(O)=O WQEVDHBJGNOKKO-UHFFFAOYSA-K 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 20
- 239000008119 colloidal silica Substances 0.000 claims description 14
- JQWHASGSAFIOCM-UHFFFAOYSA-M sodium periodate Chemical compound [Na+].[O-]I(=O)(=O)=O JQWHASGSAFIOCM-UHFFFAOYSA-M 0.000 claims description 8
- TWLXDPFBEPBAQB-UHFFFAOYSA-N orthoperiodic acid Chemical compound OI(O)(O)(O)(O)=O TWLXDPFBEPBAQB-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910021485 fumed silica Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 14
- 239000002245 particle Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 8
- 239000007800 oxidant agent Substances 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 7
- 239000011684 sodium molybdate Substances 0.000 description 6
- 235000015393 sodium molybdate Nutrition 0.000 description 6
- TVXXNOYZHKPKGW-UHFFFAOYSA-N sodium molybdate (anhydrous) Chemical compound [Na+].[Na+].[O-][Mo]([O-])(=O)=O TVXXNOYZHKPKGW-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000003002 pH adjusting agent Substances 0.000 description 4
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- APUPEJJSWDHEBO-UHFFFAOYSA-P ammonium molybdate Chemical compound [NH4+].[NH4+].[O-][Mo]([O-])(=O)=O APUPEJJSWDHEBO-UHFFFAOYSA-P 0.000 description 2
- 239000011609 ammonium molybdate Substances 0.000 description 2
- 235000018660 ammonium molybdate Nutrition 0.000 description 2
- 229940010552 ammonium molybdate Drugs 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 150000007529 inorganic bases Chemical class 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 150000007530 organic bases Chemical class 0.000 description 2
- 235000019353 potassium silicate Nutrition 0.000 description 2
- CMZUMMUJMWNLFH-UHFFFAOYSA-N sodium metavanadate Chemical compound [Na+].[O-][V](=O)=O CMZUMMUJMWNLFH-UHFFFAOYSA-N 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 239000004111 Potassium silicate Substances 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000003242 anti bacterial agent Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- -1 orthoperiodate Chemical compound 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-M periodate Chemical compound [O-]I(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-M 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 1
- 229910052913 potassium silicate Inorganic materials 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
Abstract
Description
本発明は、化合物半導体からなる研磨対象物を研磨する用途で使用される研磨剤組成物に関する。さらに詳しくは、窒化物半導体基板用研磨剤組成物に関する。窒化物半導体は、窒化ガリウム系半導体、ＩＩＩ族窒化物系化合物半導体などとも呼ばれる。窒化物半導体には、窒化ガリウムの他に、窒化ガリウムのＧａの一部が他の周期表ＩＩＩ族元素（例：Ａｌ，Ｉｎ）に置換された化合物が含まれる。例えば、ＡｌＧａＮ，ＧａＩｎＮ，ＡｌＧａＩｎＮなどが含まれる。これらの中でも、特には窒化ガリウム基板用研磨剤組成物に関する。 The present invention relates to an abrasive composition used for polishing a polishing object comprising a compound semiconductor. More specifically, the present invention relates to an abrasive composition for a nitride semiconductor substrate. The nitride semiconductor is also called a gallium nitride based semiconductor, a group III nitride based compound semiconductor, or the like. In addition to gallium nitride, the nitride semiconductor includes a compound in which a part of Ga of gallium nitride is replaced with another group III element (eg, Al, In) of the periodic table. For example, AlGaN, GaInN, AlGaInN, etc. are included. Among these, it is related with the abrasive | polishing agent composition for gallium nitride substrates especially.
窒化物半導体は、近年、パワーデバイスや高輝度ＬＥＤを製造する際の材料として注目されており、用途が拡大している。窒化物半導体を用いてパワーデバイスやＬＥＤを製造する場合、一般的に、加工ダメージがなく、かつ平滑な面を得る必要があるため、窒化物半導体の研磨が実施される。 In recent years, nitride semiconductors have attracted attention as a material for producing power devices and high-brightness LEDs, and their applications are expanding. When manufacturing a power device or LED using a nitride semiconductor, it is generally necessary to obtain a smooth surface without processing damage, and therefore, the nitride semiconductor is polished.
しかしながら、窒化物半導体は、一般に化学的に非常に安定であり、反応性が低く、なかでも硬度の非常に高いものは、研磨による加工は、容易ではない。そのため、通常、窒化物半導体は、ダイヤモンドを用いたラッピングを施した後、ラッピングで生じた傷をコロイダルシリカで研磨することにより仕上げられる。たとえば、砥粒と酸化還元電位が１．８Ｖ以上の酸化剤と水を含有する研磨剤組成物を用いて窒化ガリウム基板を研磨すること（特許文献１参照）や、特定の粒度分布を有するコロイダルシリカと酸を含んだ研磨剤組成物を用いて窒化ガリウム基板を研磨する方法（特許文献２参照）も知られている。 However, nitride semiconductors are generally very chemically stable, have low reactivity, and those having extremely high hardness are not easily processed by polishing. Therefore, nitride semiconductors are usually finished by lapping with diamond and polishing scratches caused by lapping with colloidal silica. For example, a gallium nitride substrate is polished using an abrasive composition containing abrasive grains, an oxidizing agent having an oxidation-reduction potential of 1.8 V or more, and water (see Patent Document 1), or a colloidal having a specific particle size distribution. A method of polishing a gallium nitride substrate using an abrasive composition containing silica and an acid (see Patent Document 2) is also known.
しかしながら、これらの研磨剤組成物を用いて窒化ガリウム基板を研磨した場合、十分な研磨速度が得られない。特にラッピングを施した基板をこれらの研磨剤組成物によって、研磨する場合、高平滑な表面を得るのに時間がかかり、生産性が低いという問題がある。 However, when a gallium nitride substrate is polished using these abrasive compositions, a sufficient polishing rate cannot be obtained. In particular, when a lapped substrate is polished with these abrasive compositions, it takes time to obtain a highly smooth surface and there is a problem that productivity is low.
さらに、窒化ガリウム基板を研磨した後でピットが多発するという問題があり、ピットの少ない仕上がり面が求められている。 Further, there is a problem that pits are frequently generated after polishing a gallium nitride substrate, and a finished surface with few pits is required.
本発明の目的は、窒化物半導体基板を高い研磨速度で研磨し、さらに窒化物半導体基板の表面平滑性を向上させることができる研磨剤組成物を提供することにある。特に、窒化ガリウム基板を高い研磨速度で研磨し、ピットが少なく表面平滑性に優れた研磨表面が得られる研磨剤組成物を提供することにある。 An object of the present invention is to provide an abrasive composition capable of polishing a nitride semiconductor substrate at a high polishing rate and further improving the surface smoothness of the nitride semiconductor substrate. In particular, an object of the present invention is to provide an abrasive composition capable of polishing a gallium nitride substrate at a high polishing rate to obtain a polished surface with few pits and excellent surface smoothness.
本発明者は、金属酸および／または金属酸塩、砥粒、酸素供与剤、および水を含有してなり、ｐＨ値（２５℃）が０．１以上７．０未満であることを特徴とする窒化物半導体基板用研磨剤組成物を使用することにより、上記課題を解決しうることを見出した。すなわち、本発明によれば、窒化物半導体基板等の基板を研磨する時に使用する研磨剤組成物が提供される。 The present inventor comprises a metal acid and / or metal acid salt, an abrasive, an oxygen donor, and water, and has a pH value (25 ° C.) of 0.1 or more and less than 7.0. It has been found that the above problem can be solved by using a polishing composition for a nitride semiconductor substrate. That is, according to this invention, the abrasive | polishing agent composition used when grind | polishing board | substrates, such as a nitride semiconductor substrate, is provided.
［１］ 金属酸および／または金属酸塩、砥粒、酸素供与剤、および水を含有してなり、ｐＨ値（２５℃）が０．１以上７．０未満である窒化物半導体基板用研磨剤組成物。 [1] Polishing for nitride semiconductor substrate containing metal acid and / or metal acid salt, abrasive grains, oxygen donor, and water, and having a pH value (25 ° C.) of 0.1 or more and less than 7.0 Agent composition.
［２］ 前記金属酸および／または金属酸塩が、モリブデン酸および／またはモリブデン酸塩、タングステン酸および／またはタングステン酸塩、バナジン酸および／またはバナジン酸塩からなる群より選ばれる少なくとも１種である前記［１］に記載の窒化物半導体基板用研磨剤組成物。 [2] The metal acid and / or metal acid salt is at least one selected from the group consisting of molybdic acid and / or molybdate, tungstic acid and / or tungstate, vanadic acid and / or vanadate. The abrasive composition for a nitride semiconductor substrate according to [1].
［３］ 前記金属酸および／または金属酸塩が、モリブデン酸および／またはモリブデン酸塩である前記［１］または［２］に記載の窒化物半導体基板用研磨剤組成物。 [3] The abrasive composition for a nitride semiconductor substrate according to [1] or [2], wherein the metal acid and / or metal salt is molybdic acid and / or molybdate.
［４］ 前記砥粒が、コロイダルシリカ、ヒュームドシリカ、および湿式合成シリカからなる群より選ばれる少なくとも１種である前記［１］〜［３］のいずれかに記載の窒化物半導体基板用研磨剤組成物。 [4] The polishing for a nitride semiconductor substrate according to any one of [1] to [3], wherein the abrasive grains are at least one selected from the group consisting of colloidal silica, fumed silica, and wet synthetic silica. Agent composition.
［５］ 前記酸素供与剤が、過酸化水素、オルト過ヨウ素酸、およびメタ過ヨウ素酸ナトリウムからなる群より選ばれる少なくとも１種である前記［１］〜［４］のいずれかに記載の窒化物半導体基板用研磨剤組成物。 [5] The nitriding according to any one of [1] to [4], wherein the oxygen donor is at least one selected from the group consisting of hydrogen peroxide, orthoperiodic acid, and sodium metaperiodate. Polishing composition for semiconductor substrate.
［６］ ｐＨ値（２５℃）が０．５以上４．０未満である前記［１］〜［５］のいずれかに記載の窒化物半導体基板用研磨剤組成物。 [6] The abrasive composition for a nitride semiconductor substrate according to any one of [1] to [5], which has a pH value (25 ° C.) of 0.5 or more and less than 4.0.
本発明の研磨剤組成物を用いることにより、窒化物半導体基板を、高い研磨速度にて、研磨表面にピットが少なく表面平滑性に優れた状態に仕上げることができる。 By using the abrasive composition of the present invention, a nitride semiconductor substrate can be finished at a high polishing rate so that the polishing surface has few pits and has excellent surface smoothness.
以下、本発明の実施の形態について説明する。本発明は、以下の実施形態に限定されるものではなく、発明の範囲を逸脱しない限りにおいて、変更、修正、改良を加え得るものである。 Embodiments of the present invention will be described below. The present invention is not limited to the following embodiments, and changes, modifications, and improvements can be added without departing from the scope of the invention.
本発明の研磨剤組成物は、金属酸および／または金属酸塩、砥粒、酸素供与剤、および水を含有し、ｐＨ値（２５℃）が０．１以上７．０未満である。 The abrasive | polishing agent composition of this invention contains a metal acid and / or a metal salt, an abrasive grain, an oxygen donor, and water, and pH value (25 degreeC) is 0.1 or more and less than 7.0.
（金属酸および／または金属酸塩）
本発明で使用される金属酸および／または金属酸塩としては、モリブデン酸および／またはモリブデン酸塩、タングステン酸および／またはタングステン酸塩、バナジン酸および／またはバナジン酸塩などが挙げられる。窒化物半導体基板用研磨剤組成物は、金属酸および／または金属酸塩として、これらからなる群から選ばれる少なくとも１種を含むことが好ましく、これらの中でも好ましくは、モリブデン酸塩である。
(Metal acid and / or metal acid salt)
Examples of the metal acid and / or metal acid salt used in the present invention include molybdic acid and / or molybdate, tungstic acid and / or tungstate, vanadic acid and / or vanadate, and the like. The abrasive composition for a nitride semiconductor substrate preferably contains at least one selected from the group consisting of these as a metal acid and / or a metal acid salt, and among these, a molybdate is preferable.
モリブデン酸塩の具体例としては、モリブデン酸ナトリウム、モリブデン酸カリウム、モリブデン酸アンモニウムなどが挙げられる。その中でもモリブデン酸ナトリウムが好ましく用いられる。 Specific examples of molybdate include sodium molybdate, potassium molybdate, and ammonium molybdate. Of these, sodium molybdate is preferably used.
本発明の研磨剤組成物中の金属酸および／または金属酸塩の濃度は、０．１質量％以上が好ましく、より好ましくは０．２質量％以上である。金属酸および／または金属酸塩の濃度が０．１質量％以上では、研磨速度向上効果が十分に得られる。また金属酸および／または金属酸塩の濃度が１０．０質量％以下であることが好ましく、さらに好ましくは５．０質量％以下である。金属酸および／または金属酸塩の濃度が１０質量％以下とすると、不溶分が生成する懸念が低下する。また、経済的にも有利となる。 The concentration of the metal acid and / or metal acid salt in the abrasive composition of the present invention is preferably 0.1% by mass or more, more preferably 0.2% by mass or more. When the concentration of the metal acid and / or metal salt is 0.1% by mass or more, the polishing rate improvement effect can be sufficiently obtained. Moreover, it is preferable that the density | concentration of a metal acid and / or a metal acid salt is 10.0 mass% or less, More preferably, it is 5.0 mass% or less. When the concentration of the metal acid and / or metal acid salt is 10% by mass or less, the concern that insoluble matter is generated decreases. It is also economically advantageous.
（砥粒）
本発明で使用される砥粒としては、コロイダルシリカ、ヒュームドシリカ、および湿式合成シリカからなる群より選ばれる少なくとも１種が挙げられる。その中でもコロイダルシリカが好ましい。
(Abrasive grains)
The abrasive used in the present invention includes at least one selected from the group consisting of colloidal silica, fumed silica, and wet synthetic silica. Of these, colloidal silica is preferred.
コロイダルシリカは、ケイ酸ナトリウム、ケイ酸カリウム等のケイ酸アルカリ金属塩を原料とし、当該原料を水溶液中で縮合反応させて粒子を成長させる水ガラス法、またはテトラエトキシシラン等のアルコキシシランを原料とし、当該原料をアルコール等の水溶性有機溶媒を含有する水中で、酸またはアルカリでの加水分解による縮合反応によって粒子を成長させるアルコキシシラン法等で得られる。 Colloidal silica is made from alkali glass silicates such as sodium silicate and potassium silicate as raw materials, and water glass method in which the raw materials are condensed in an aqueous solution to grow particles, or alkoxysilanes such as tetraethoxysilane as raw materials. The raw material is obtained by an alkoxysilane method or the like in which particles are grown in a water containing a water-soluble organic solvent such as alcohol by a condensation reaction by hydrolysis with an acid or an alkali.
コロイダルシリカは球状、鎖状、金平糖型、異形型などの形状が知られており、水中に一次粒子が単分散してコロイド状をなしている。 Colloidal silica is known to have a spherical shape, a chain shape, a confetti shape, an irregular shape, and the like, and primary particles are monodispersed in water to form a colloidal shape.
コロイダルシリカの平均粒子径は、１０ｎｍ未満では研磨速度が低下し、２００ｎｍを超えると研磨される被研磨面の表面粗度が必ずしも良好でなくなることから、１０〜２００ｎｍの範囲であることが好ましい。 The average particle size of colloidal silica is preferably in the range of 10 to 200 nm because the polishing rate decreases when the average particle size is less than 10 nm, and the surface roughness of the polished surface is not necessarily good when the average particle size exceeds 200 nm.
研磨剤組成物中の砥粒の含有量は、２質量％未満では、研磨速度が低下することがある。４０質量％を超えても、研磨速度は向上せず、経済的に有効でないことから、２〜４０質量％の範囲が好ましい。 If the content of the abrasive grains in the abrasive composition is less than 2% by mass, the polishing rate may decrease. Even if it exceeds 40% by mass, the polishing rate is not improved, and it is not economically effective, so the range of 2 to 40% by mass is preferable.
（酸素供与剤）
酸素供与剤とは、酸化剤の一種であるが、前述した金属酸および／または金属酸塩に酸素を供与し、準安定なペルオキソ金属酸イオンを生成する。本発明で使用される酸素供与剤としては、過酸化水素、過ヨウ素酸系酸化剤、過マンガン酸系酸化剤、過塩素酸系酸化剤、過硫酸系酸化剤などが挙げられる。好ましくは、過酸化水素、過ヨウ素酸系酸化剤が挙げられる。過ヨウ素酸系酸化剤の具体例としては、オルト過ヨウ素酸、メタ過ヨウ素酸、オルト過ヨウ素酸塩、メタ過ヨウ素酸塩が挙げられる。
(Oxygen donor)
The oxygen donating agent is a kind of oxidizing agent, but donates oxygen to the metal acid and / or metal acid salt described above to generate metastable peroxometalate ions. Examples of the oxygen donor used in the present invention include hydrogen peroxide, periodate oxidizer, permanganate oxidizer, perchlorate oxidizer, and persulfate oxidizer. Preferably, hydrogen peroxide and a periodic acid oxidant are used. Specific examples of the periodic acid-based oxidizing agent include orthoperiodic acid, metaperiodic acid, orthoperiodate, and metaperiodate.
酸素供与剤として、より好ましくは、過酸化水素、オルト過ヨウ素酸、メタ過ヨウ素酸ナトリウムなどを挙げることができる。窒化物半導体基板用研磨剤組成物は、酸素供与剤として、これらからなる群から選ばれる少なくとも１種を含むことが好ましく、特に好ましいのは過酸化水素である。 More preferable examples of the oxygen donor include hydrogen peroxide, orthoperiodic acid, and sodium metaperiodate. The abrasive composition for a nitride semiconductor substrate preferably contains at least one selected from the group consisting of these as an oxygen donor, and hydrogen peroxide is particularly preferable.
研磨剤組成物中の酸素供与剤の含有量は、０．２〜８．０質量％の範囲が好ましく、さらに好ましくは０．５〜５．０質量％の範囲である。酸素供与剤の含有量は、研磨速度と表面粗度を考慮して適宜設定することが好ましい。 The content of the oxygen donor in the polishing composition is preferably in the range of 0.2 to 8.0% by mass, more preferably in the range of 0.5 to 5.0% by mass. The content of the oxygen donor is preferably set as appropriate in consideration of the polishing rate and the surface roughness.
（水）
本発明で使用される水は、蒸留水、イオン交換水などの不純物を除去した水が好ましく用いられる。研磨後の洗浄性を考慮すると、イオン交換水が好ましい。水は、研磨剤の流動性を制御する機能を有するので、その含有量は、研磨速度のような目標とする研磨特性に合わせて適宜設定することができる。例えば、水の含有割合は、研磨剤組成物の４０〜９０質量％の範囲とすることが好ましい。水の含有量が、研磨剤組成物の４０質量％未満では、研磨剤の粘性が高くなり、流動性が損なわれる場合がある。一方、水の含有量が９０質量％を超えると、砥粒濃度が低くなり、十分な研磨速度が得られないことがある。
(water)
The water used in the present invention is preferably water from which impurities such as distilled water and ion exchange water have been removed. Considering detergency after polishing, ion exchange water is preferable. Since water has a function of controlling the fluidity of the abrasive, the content thereof can be appropriately set according to the target polishing characteristics such as the polishing rate. For example, the water content is preferably in the range of 40 to 90% by mass of the abrasive composition. When the water content is less than 40% by mass of the abrasive composition, the viscosity of the abrasive becomes high and fluidity may be impaired. On the other hand, if the water content exceeds 90% by mass, the abrasive concentration is lowered, and a sufficient polishing rate may not be obtained.
（ｐＨ）
本発明の研磨剤組成物のｐＨ値（２５℃）は０．１以上７．０未満であり、好ましくは０．５以上４．０未満である。さらに好ましくは１．０以上３．０未満である。研磨剤組成物のｐＨ値（２５℃）が０．１未満では、研磨後の基板表面の平滑性が悪化する懸念がある。一方、研磨剤組成物のｐＨ値（２５℃）が７．０以上では、酸素供与剤の安定性低下や研磨速度の低下などが起こり、好ましくない。
(PH)
The pH value (25 ° C.) of the abrasive composition of the present invention is 0.1 or more and less than 7.0, preferably 0.5 or more and less than 4.0. More preferably, it is 1.0 or more and less than 3.0. When the pH value (25 ° C.) of the abrasive composition is less than 0.1, the smoothness of the substrate surface after polishing may be deteriorated. On the other hand, when the pH value (25 ° C.) of the abrasive composition is 7.0 or more, the stability of the oxygen donor and the polishing rate are lowered, which is not preferable.
（ｐＨ調整剤）
本発明の研磨剤組成物のｐＨ値を所望の値とする目的で、ｐＨ調整剤を添加することができる。ｐＨ調整剤としては、酸または塩基を使用することができる。
(PH adjuster)
A pH adjusting agent can be added for the purpose of setting the pH value of the abrasive composition of the present invention to a desired value. An acid or a base can be used as the pH adjuster.
ｐＨ調整剤として使用される酸としては、無機酸あるいは有機酸が挙げられる。無機酸としては、硫酸、硝酸、塩酸、リン酸、ホスホン酸、ホスフィン酸、ピロリン酸、などが挙げられる。有機酸としては、ギ酸、酢酸、プロピオン酸、有機ホスホン酸などが挙げられる。酸の使用量は、研磨剤組成物のｐＨ値（２５℃）の設定により適宜決められる。 Examples of the acid used as the pH adjuster include inorganic acids and organic acids. Examples of inorganic acids include sulfuric acid, nitric acid, hydrochloric acid, phosphoric acid, phosphonic acid, phosphinic acid, pyrophosphoric acid, and the like. Examples of the organic acid include formic acid, acetic acid, propionic acid, and organic phosphonic acid. The usage-amount of an acid is suitably determined by the setting of pH value (25 degreeC) of an abrasive | polishing agent composition.
ｐＨ調整剤として使用される塩基としては、無機塩基あるいは有機塩基が挙げられる。無機塩基としては、水酸化ナトリウム、水酸化カリウム、アンモニアなどが挙げられる。有機塩基としては、アルキルアミン、アルカノールアミン、四級アンモニウム水酸化物などが挙げられる。 Examples of the base used as the pH adjuster include inorganic bases and organic bases. Examples of the inorganic base include sodium hydroxide, potassium hydroxide, ammonia and the like. Examples of the organic base include alkylamine, alkanolamine, quaternary ammonium hydroxide and the like.
本発明の研磨剤組成物は、必要に応じて、通常の研磨剤組成物に含まれる成分を含有してもよい。そのような成分としては、界面活性剤、清浄剤、防錆剤、表面改質剤、粘度調節剤、抗菌剤、分散剤などが挙げられる。 The abrasive | polishing agent composition of this invention may contain the component contained in a normal abrasive | polishing agent composition as needed. Examples of such components include surfactants, detergents, rust inhibitors, surface modifiers, viscosity modifiers, antibacterial agents, and dispersants.
本発明の研磨剤組成物は、各成分を公知の方法で混合することにより、調製することができる。研磨剤組成物は、経済性の観点から、通常、濃縮液として製造され、これを使用時に希釈する場合が多い。研磨剤組成物は、そのまま使用してもよいし、濃縮液であれば希釈して使用すればよい。濃縮液を希釈する場合、その希釈倍率は、特に制限されず、濃縮液における各成分の濃度や研磨条件に応じて適宜決定できる。尚、前述した各成分の含有量は、使用時における含有量である。 The abrasive composition of the present invention can be prepared by mixing each component by a known method. The abrasive composition is usually produced as a concentrated liquid from the viewpoint of economy, and it is often diluted at the time of use. The abrasive composition may be used as it is, or may be diluted and used if it is a concentrated liquid. When diluting the concentrate, the dilution factor is not particularly limited, and can be appropriately determined according to the concentration of each component in the concentrate and the polishing conditions. In addition, content of each component mentioned above is content at the time of use.
（研磨装置および研磨方法）
本発明の研磨剤組成物を用いて窒化物半導体基板を研磨する装置としては、特に制限は無く、窒化物半導体基板を保持する治具（キャリア）と研磨パッドとを備える研磨装置を用いることができ、両面研磨機および片面研磨機のいずれでもよい。
(Polishing apparatus and polishing method)
An apparatus for polishing a nitride semiconductor substrate using the polishing composition of the present invention is not particularly limited, and a polishing apparatus including a jig (carrier) for holding the nitride semiconductor substrate and a polishing pad may be used. Either a double-side polishing machine or a single-side polishing machine may be used.
本発明の研磨剤組成物を用いて、窒化物半導体基板を研磨する方法としては、研磨剤を研磨パッドに供給しながら、窒化物半導体基板の被研磨面と研磨パッドとを接触させ、両者間の相対運動により研磨を行う方法が好ましい。 As a method for polishing a nitride semiconductor substrate using the polishing composition of the present invention, the polishing surface of the nitride semiconductor substrate is brought into contact with the polishing pad while supplying the polishing agent to the polishing pad. A method in which polishing is performed by the relative motion of is preferable.
研磨パッドとしては、特に制限は無く、従来公知のものが使用できる。研磨パッドの材質としては、例えばポリウレタンなどが挙げられる。研磨パッドの形状は、例えば不織布状のもの、スウェード状のものなどが好ましく使用される。 There is no restriction | limiting in particular as a polishing pad, A conventionally well-known thing can be used. Examples of the material of the polishing pad include polyurethane. As the shape of the polishing pad, for example, a nonwoven fabric or a suede is preferably used.
本発明の研磨剤組成物を研磨機に供給する方法は、予め研磨剤組成物の構成成分が十分に混合された状態で研磨パッドと窒化物半導体基板の間にポンプ等で供給する方法、研磨の直前の供給ライン内等で構成成分を混合して供給する方法などを用いることができる。 The method of supplying the polishing composition of the present invention to a polishing machine is a method of supplying a polishing pad and a nitride semiconductor substrate with a pump or the like in a state where the constituents of the polishing composition are sufficiently mixed in advance. For example, a method of mixing and supplying the constituent components in the supply line immediately before can be used.
以下に、本発明の研磨剤組成物を実施例により説明する。尚、本発明は、以下の実施例に何ら限定されるものではなく、本発明の技術範囲に属する限り、種々の態様で実施できることはいうまでもない。 Below, the abrasive | polishing agent composition of this invention is demonstrated by an Example. In addition, this invention is not limited to the following Examples at all, and as long as it belongs to the technical scope of this invention, it cannot be overemphasized that it can implement with a various aspect.
本発明のコロイダルシリカの平均粒子径（Ｄ５０）は、以下の方法により測定した。まず、コロイダルシリカの粒子径（Ｈｅｙｗｏｏｄ径）を、透過型電子顕微鏡（ＴＥＭ）（日本電子（株）製、透過型電子顕微鏡ＪＥＭ２０００ＦＸ（２００ｋＶ））を用いて倍率１０万倍の視野の写真を解析ソフト（マウンテック（株）製、Ｍａｃ−Ｖｉｅｗ Ｖｅｒ．４．０）を用いて解析することによりＨｅｙｗｏｏｄ径（投射面積円相当径）として測定した。 The average particle diameter (D50) of the colloidal silica of the present invention was measured by the following method. First, the colloidal silica particle diameter (Heywood diameter) was analyzed using a transmission electron microscope (TEM) (manufactured by JEOL Ltd., transmission electron microscope JEM2000FX (200 kV)) at a magnification of 100,000 times. It was measured as Heywood diameter (projected area equivalent circle diameter) by analyzing using software (manufactured by Mountec Co., Ltd., Mac-View Ver. 4.0).
コロイダルシリカの平均粒子径（Ｄ５０）は、前述の方法で２０００個程度のコロイダルシリカの粒子径を解析し、小粒径側からの積算粒径分布（累積体積基準）が５０％となる粒径を上記解析ソフト（マウンテック（株）製、Ｍａｃ−Ｖｉｅｗ Ｖｅｒ．４．０）を用いて算出した。 The average particle size (D50) of the colloidal silica is the particle size at which the particle size of about 2000 colloidal silica is analyzed by the above-mentioned method, and the integrated particle size distribution (accumulated volume basis) from the small particle size side becomes 50%. Was calculated using the above analysis software (Mac-View Ver. 4.0, manufactured by Mountec Co., Ltd.).
研磨試験を行う際の研磨条件を以下に示す。
研磨対象物：直径２インチ、ｎ型 ＧａＮ基板
研磨対象結晶面：Ｇａ面
研磨加工機：片面研磨加工機 （定盤径３６０ｍｍ）
研磨パッド：２５−３Ｌ （丸石産業（株）製）
研磨圧力：５００ｇｆ／ｃｍ２
定盤回転数：６０ｒｐｍ
研磨時間：１ｈｒ
研磨剤組成物の供給方法：循環
研磨剤組成物の供給速度：２００ｍｌ／ｍｉｎ
The polishing conditions for performing the polishing test are shown below.
Polishing object: diameter 2 inches, n-type GaN substrate polishing target crystal face: Ga surface polishing machine: single-side polishing machine (table plate diameter 360 mm)
Polishing pad: 25-3L (manufactured by Maruishi Sangyo Co., Ltd.)
Polishing pressure: 500 gf / cm 2
Plate rotation speed: 60rpm
Polishing time: 1 hr
Abrasive composition supply method: Circulating abrasive composition supply rate: 200 ml / min
（被研磨面の特性評価・研磨速度の算出方法）
被研磨面の特性評価で、研磨速度は、下式により求めた。ピット個数と表面粗さは、原子間力顕微鏡を用い、３０μｍ×３０μｍ視野で調べた。表面粗さ（Ｒａ）はｎｍ単位で表示した。ピット個数は、視野内に存在するピットを数え、ピット個数から以下のように４段階で表示した。
◎（優）：２５個未満
○（良）：２５個以上、５０個未満
△（可）：５０個以上、１００個未満
×（不可）：１００個以上
(Characteristic evaluation of polished surface / Calculation method of polishing rate)
In the evaluation of the characteristics of the surface to be polished, the polishing rate was determined by the following equation. The number of pits and the surface roughness were examined using an atomic force microscope in a 30 μm × 30 μm field of view. The surface roughness (Ra) was expressed in nm. The number of pits was displayed in four stages as follows, counting the number of pits existing in the field of view.
◎ (excellent): less than 25 ○ (good): 25 or more, less than 50 △ (possible): 50 or more, less than 100 × (impossible): 100 or more
研磨速度（ｎｍ／ｈｒ）＝（窒化ガリウム基板の研磨前質量−窒化ガリウム基板の研磨後質量）（ｇ）÷窒化ガリウム基板の研磨面積（ｃｍ２）÷窒化ガリウム基板の密度（ｇ／ｃｍ３）÷研磨時間（ｈｒ）×１０７ Polishing rate (nm / hr) = (mass before polishing of gallium nitride substrate−mass after polishing of gallium nitride substrate) (g) ÷ polishing area of gallium nitride substrate (cm 2 ) ÷ density of gallium nitride substrate (g / cm 3 ) ÷ Polishing time (hr) × 10 7
（研磨剤組成物の調製方法）
実施例１〜９および比較例１〜３で使用した研磨剤組成物は、下記の材料を、下記の含有量または添加量で含んだ研磨剤組成物である。これらの研磨剤組成物を使用して研磨試験を行った結果を表１に示した。
(Method for preparing abrasive composition)
The abrasive | polishing agent composition used in Examples 1-9 and Comparative Examples 1-3 is an abrasive | polishing agent composition which contained the following material by the following content or addition amount. The results of polishing tests using these abrasive compositions are shown in Table 1.
コロイダルシリカ（平均粒子径（Ｄ５０）：４０ｎｍ、市販のコロイダルシリカ）、３０質量％（実施例１〜９、比較例１〜３で使用）
バナジン酸ナトリウム ２．０質量％（実施例７で使用）
バナジン酸ナトリウム １．０質量％（実施例８で使用）
タングステン酸ナトリウム ２．０質量％（実施例９で使用）
モリブデン酸ナトリウム ０．２質量％（実施例１で使用）
モリブデン酸ナトリウム ２．０質量％（実施例２、４〜５、比較例２、３で使用）
モリブデン酸ナトリウム ５．０質量％（実施例３で使用）
モリブデン酸アンモニウム ２．０質量％（実施例６で使用）
過酸化水素 ５．０質量％（実施例１〜７、９、比較例１、３で使用）
メタ過ヨウ素酸ナトリウム ０．５質量％（実施例８で使用）
ホスホン酸 ｐＨ値（２５℃）が設定値になるように必要量を添加（実施例４で使用）
リン酸 ｐＨ値（２５℃）が設定値になるように必要量を添加（実施例５で使用）
硝酸 ｐＨ値（２５℃）が設定値になるように必要量を添加（実施例１〜３、６、８、９、比較例１、２で使用）
Colloidal silica (average particle diameter (D50): 40 nm, commercially available colloidal silica), 30% by mass (used in Examples 1 to 9 and Comparative Examples 1 to 3)
Sodium vanadate 2.0% by mass (used in Example 7)
Sodium vanadate 1.0% by mass (used in Example 8)
Sodium tungstate 2.0% by mass (used in Example 9)
Sodium molybdate 0.2% by mass (used in Example 1)
Sodium molybdate 2.0% by mass (used in Examples 2, 4 to 5 and Comparative Examples 2 and 3)
Sodium molybdate 5.0 mass% (used in Example 3)
Ammonium molybdate 2.0 mass% (used in Example 6)
Hydrogen peroxide 5.0 mass% (used in Examples 1-7, 9 and Comparative Examples 1, 3)
Sodium metaperiodate 0.5% by weight (used in Example 8)
Add necessary amount so that pH value (25 ° C) of phosphonic acid becomes set value (used in Example 4)
Add necessary amount so that phosphoric acid pH value (25 ° C) is set value (used in Example 5)
Nitric acid Add necessary amount so that pH value (25 ° C) becomes set value (used in Examples 1-3, 6, 8, 9 and Comparative Examples 1 and 2)
（考察）
実施例１〜７、９と比較例１の対比により、過酸化水素存在下でさらに金属酸塩を添加することにより、研磨速度が増大し、ピットと表面粗さ（Ｒａ）が改善することがわかる。また実施例１〜５と比較例２の対比により、モリブデン酸ナトリウムの存在下でさらに過酸化水素を添加することにより、研磨速度が増大し、さらにピットと表面粗さ（Ｒａ）が改善することがわかる。一方、比較例３の結果から、研磨剤組成物のｐＨ値（２５℃）が７．０を超えると酸素供与剤（過酸化水素）の分解により研磨が不可能となることがわかる。以上のことから、本発明により研磨速度を向上させながら、表面粗さとピットを改善できることがわかる。
(Discussion)
By comparing Examples 1 to 7 and 9 with Comparative Example 1, addition of a metal salt in the presence of hydrogen peroxide increases the polishing rate and improves pits and surface roughness (Ra). Recognize. Further, by comparing Examples 1 to 5 and Comparative Example 2, the addition of hydrogen peroxide in the presence of sodium molybdate increases the polishing rate and further improves the pits and surface roughness (Ra). I understand. On the other hand, it can be seen from the results of Comparative Example 3 that when the pH value (25 ° C.) of the abrasive composition exceeds 7.0, polishing becomes impossible due to decomposition of the oxygen donor (hydrogen peroxide). From the above, it can be seen that the present invention can improve the surface roughness and pits while increasing the polishing rate.
本発明の研磨剤組成物は、パワーデバイスや高輝度ＬＥＤを製造する際の材料として広く用いられている化合物半導体、特に窒化物半導体基板の製造に使用することができる。 The abrasive | polishing agent composition of this invention can be used for manufacture of the compound semiconductor currently used widely as a material at the time of manufacturing a power device or high-intensity LED, especially a nitride semiconductor substrate.
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| JP2010284784A (en) * | 2009-05-15 | 2010-12-24 | Yamaguchi Seiken Kogyo Kk | Abrasive composition |
| WO2013035539A1 (en) * | 2011-09-05 | 2013-03-14 | 旭硝子株式会社 | Polishing agent and polishing method |
| WO2013133198A1 (en) * | 2012-03-05 | 2013-09-12 | 株式会社 フジミインコーポレーテッド | Polishing composition and method using said polishing composition to manufacture compound semiconductor substrate |
| JP2014205756A (en) * | 2013-04-11 | 2014-10-30 | 山口精研工業株式会社 | Rough polishing abrasive composition, method for polishing magnetic disk substrate, method for producing magnetic disk substrate, and magnetic disk substrate |
| JP2015229750A (en) * | 2014-06-06 | 2015-12-21 | コニカミノルタ株式会社 | Cmp polishing liquid |
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| US20050155296A1 (en) * | 2004-01-16 | 2005-07-21 | Siddiqui Junaid A. | Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization |
| JP2010284784A (en) * | 2009-05-15 | 2010-12-24 | Yamaguchi Seiken Kogyo Kk | Abrasive composition |
| WO2013035539A1 (en) * | 2011-09-05 | 2013-03-14 | 旭硝子株式会社 | Polishing agent and polishing method |
| WO2013133198A1 (en) * | 2012-03-05 | 2013-09-12 | 株式会社 フジミインコーポレーテッド | Polishing composition and method using said polishing composition to manufacture compound semiconductor substrate |
| JP2014205756A (en) * | 2013-04-11 | 2014-10-30 | 山口精研工業株式会社 | Rough polishing abrasive composition, method for polishing magnetic disk substrate, method for producing magnetic disk substrate, and magnetic disk substrate |
| JP2015229750A (en) * | 2014-06-06 | 2015-12-21 | コニカミノルタ株式会社 | Cmp polishing liquid |
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| WO2022024726A1 (en) * | 2020-07-27 | 2022-02-03 | 山口精研工業株式会社 | Polishing agent composition and polishing method using polishing agent composition |
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