JP2018061747A - Microwave therapeutic device - Google Patents
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- 230000001225 therapeutic effect Effects 0.000 title abstract description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 230000010355 oscillation Effects 0.000 claims abstract description 15
- 230000005540 biological transmission Effects 0.000 claims abstract description 11
- 238000002560 therapeutic procedure Methods 0.000 claims description 19
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims 3
- 230000005855 radiation Effects 0.000 description 25
- 238000000034 method Methods 0.000 description 5
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 4
- 230000001629 suppression Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 239000000463 material Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000015 thermotherapy Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
本発明は、マイクロ波治療器に関するものである。 The present invention relates to a microwave therapy device.
マイクロ波治療器は、アンテナから放射されたマイクロ波を生体組織に放射して加温する温熱治療器である。マイクロ波治療は、その周波数帯域を考慮すると、ヒータ等の伝導熱や赤外線等の輻射熱を用いた治療器と比較して、患者の深部の加温が可能である。また、患者が衣服等を着用していても治療が可能であり、衣服を脱がずに所望する患部を温熱治療できる等の利点を有する。 A microwave therapy device is a thermal therapy device that radiates and heats a microwave emitted from an antenna to a living tissue. In consideration of the frequency band, microwave therapy can warm a patient deeper than a treatment device using conduction heat such as a heater or radiation heat such as infrared rays. In addition, even if the patient wears clothes or the like, the treatment is possible, and there is an advantage that the desired affected part can be treated with heat without taking off the clothes.
ここで、従来のマイクロ波治療器は、図６、図７に示されるように、ＡＣ１００Ｖの交流電力を高圧トランス２２で昇圧した後、整流器２３で整流し、この整流後の電圧をマグネトロン２４の陽極に供給し、マグネトロン２４の陽極電圧が発振電圧を超えると、マイクロ波を発生し、最終的にアンテナ２５から患者に向けて輻射されるものが一般的であった。 Here, as shown in FIGS. 6 and 7, the conventional microwave therapy device boosts AC 100V AC power with a high-voltage transformer 22 and then rectifies it with a rectifier 23, and the rectified voltage is applied to the magnetron 24. When it is supplied to the anode and the anode voltage of the magnetron 24 exceeds the oscillation voltage, a microwave is generally generated and finally radiated from the antenna 25 toward the patient.
上記従来のマイクロ波治療器に使用するマグネトロン２４には、特有の不要輻射の問題がある。具体的には、マイクロ波治療用のマグネトロンは、陽極本体に2450MHz帯のマイクロ波を発生させるが、実際には、この基本波以外に、その整数倍の周波数の高調波勢力が同時に発生している。この高調波がアンテナ２５から輻射されると、基本波と同様に人体を含めた外部に伝搬されることとなる。当該マグネトロン２４の不要輻射は、高調波以外に、マグネトロン２４の内部の共振器構造に起因する周波数の輻射や、ノイズから立ち上がる発振機構に起因する輻射等がある。当該不要輻射を抑制するために、例えば、先行文献２に記載されるように、熱膨張係数を考慮した材料で形成した不要輻射の抑制チョークを具備する対策等が為されていた。 The magnetron 24 used in the conventional microwave therapy device has a problem of peculiar unnecessary radiation. Specifically, a magnetron for microwave therapy generates 2450 MHz band microwaves in the anode body, but in reality, in addition to this fundamental wave, harmonic forces with a frequency that is an integral multiple of that frequency are generated simultaneously. Yes. When this harmonic is radiated from the antenna 25, it is propagated to the outside including the human body in the same manner as the fundamental wave. The unnecessary radiation of the magnetron 24 includes, in addition to harmonics, radiation at a frequency due to a resonator structure inside the magnetron 24, radiation due to an oscillation mechanism rising from noise, and the like. In order to suppress the unwanted radiation, for example, as described in the prior art document 2, a measure including a choke for suppressing unwanted radiation formed of a material considering a thermal expansion coefficient has been taken.
しかしながら、当該不要輻射の抑制には機構的な限界もあり、無線障害を起こす場合もあった。特に、治療用に、マイクロ波を患者に照射するものにおいては、電子レンジのように、筐体構造で不要輻射の漏えいをシャットアウトする方法は望めないため、筐体以外の方法で、不要輻射の漏えいを抑制する必要がある。
また、マグネトロン２４は、高圧トランス、ヒータートランス、高圧コンデンサ等の比較的外形の大きいデバイスを用いて駆動されており、小型化に対する問題があった。
However, the suppression of the unnecessary radiation has a mechanical limit and sometimes causes a radio failure. In particular, in the case of irradiating a patient with microwaves for treatment, a method of shutting out leakage of unnecessary radiation with a housing structure like a microwave oven cannot be expected. It is necessary to suppress the leakage.
Further, the magnetron 24 is driven by using a device having a relatively large outer shape such as a high-voltage transformer, a heater transformer, a high-voltage capacitor, and the like, and there has been a problem with downsizing.
上記課題を解決するために、本発明に係るマイクロ波治療器は、マイクロ波を発生させる発振器と、前記発振器で作られたマイクロ波をアンテナ部に供給するための伝達部と、前記伝達部における定在波比を測定するための定在波測定手段とを備え、前記発振器は、スイッチングに半導体素子を用いるとともに、前記定在波比の出力に応じて、所定の周波数の範囲内で発振周波数を変更してなるものである。 In order to solve the above-described problems, a microwave treatment device according to the present invention includes an oscillator that generates a microwave, a transmission unit that supplies a microwave generated by the oscillator to an antenna unit, and a transmission unit A standing wave measuring means for measuring a standing wave ratio, wherein the oscillator uses a semiconductor element for switching, and an oscillation frequency within a predetermined frequency range according to the output of the standing wave ratio Is a change.
本発明に係るマイクロ波治療器によれば、優れた周波数ドリフト抑制性能と出力安定性を備えることができ、不要輻射を効果的に抑制したマイクロ波治療器を実現することができる。 According to the microwave treatment device according to the present invention, it is possible to provide a microwave treatment device that can be provided with excellent frequency drift suppression performance and output stability, and can effectively suppress unnecessary radiation.
本発明の一実施形態について、図１〜図３を用いて説明する。本発明のマイクロ波治療器は、半導体発振器回路１と、当該半導体発振器１に連なる方向性結合器２及び輻射用のアンテナ部３を有している。半導体発振器回路１における半導体スイッチング素子には、Si（シリコン）やGaAs（ガリウム砒素）を用いることも可能だが、更なる高効率を図るために、GaN（ガリウムナイトライド）を用いることが望ましい。当該半導体スイッチングによれば、マグネトロン固有の内部共振器構造に起因する周波数の輻射等の問題が無いため、その周波数占有帯域幅をマグネトロン方式と比較して、数十分の１程度に抑えることができ、高いQ値で制御することが可能となる。 An embodiment of the present invention will be described with reference to FIGS. The microwave therapy device of the present invention includes a semiconductor oscillator circuit 1, a directional coupler 2 connected to the semiconductor oscillator 1, and a radiation antenna unit 3. As the semiconductor switching element in the semiconductor oscillator circuit 1, Si (silicon) or GaAs (gallium arsenide) can be used, but it is desirable to use GaN (gallium nitride) for further higher efficiency. According to the semiconductor switching, since there is no problem of frequency radiation caused by the internal resonator structure unique to the magnetron, the frequency occupation bandwidth can be suppressed to about several tenths compared with the magnetron system. It is possible to control with a high Q value.
一方、医療用のマイクロ波治療装置には、2 400 MHz∼2 500 MHz の周波数範囲の電磁界が割り当てられており、また、JIS規格では、ケーブル又は導波管で接続するアプリケータに対して、電圧定在波比（VSWR）が 1.5 を超えてはならないと規定されている。当該状況下、2 400 MHz∼2 500 MHz以外の帯域における不要輻射を抑え、同時に、VSWRを規定値内に収めるためには、優れたQ値特性を有する半導体スイッチングを用いた発振回路が望ましい。 On the other hand, electromagnetic wave therapy devices for medical use are assigned electromagnetic fields in the frequency range of 2 400 MHz ∼ 2 500 MHz, and in JIS standards, applicators connected by cables or waveguides are used. On the other hand, it is specified that the voltage standing wave ratio (VSWR) must not exceed 1.5. Under such circumstances, an oscillation circuit using semiconductor switching with excellent Q-value characteristics is required to suppress unwanted radiation in a band other than 2 400 MHz ∼ 2 500 MHz and at the same time keep VSWR within the specified value. desirable.
また、患部にパッチアンテナを近接させて使用する治療器においては、患部以外に放射されるマイクロ波を抑制することができるが、半導体スイッチングを用いた場合、周波数を変更することが比較的容易であることから、所定の周波数（2400〜2500MHｚ）の範囲で、そのパッチ電極の幅や径を粗調しておき、実際に、周波数を変更させて、定在波比等が最良となるように微調整（追従）させることが可能となり、その生産性を向上させることも可能となる。 In addition, in a treatment device that uses a patch antenna close to an affected part, microwaves radiated to other than the affected part can be suppressed. However, when semiconductor switching is used, it is relatively easy to change the frequency. Therefore, in the range of a predetermined frequency (2400-2500MHz), the width and diameter of the patch electrode are coarsely adjusted, and the frequency is changed so that the standing wave ratio is the best. Fine adjustment (following) can be performed, and the productivity can be improved.
具体的には、パッチ電極の適切なサイズは、λ（波長）／２に関係した外径を有することとなり、実際には、機材（パッチ電極とアース間の誘電体）の実効比誘電率をεとして、λ／（ε１／２・２）の大きさで設計することになる。医療機器として使用可能な周波数の範囲は、2400〜2500MHzであるから、仮にε＝3の機材を用いた場合には、λ＝3.0＊10８／ｆ（周波数）から、34.64〜36.09mmの範囲の外径で最適合するパッチ電極を調整することとなる。
また、従来のマグネトロン方式であれば、不要な高調波が発生し得るために、マグネトロンの性能次第では、意図せぬ人体深度に電磁波が及ぶ可能性があるが、Q値に優れる半導体スイッチング回路を用いることにより、当該不具合は是正され、正しく患部を治療することが可能となる。
Specifically, the appropriate size of the patch electrode has an outer diameter related to λ (wavelength) / 2, and in practice, the effective relative dielectric constant of the equipment (dielectric between the patch electrode and the ground) is As ε, the size is designed to be λ / (ε 1/2 · 2). Since the frequency range that can be used as a medical device is 2400 to 2500 MHz, if equipment with ε = 3 is used, the range of λ = 3.0 * 108 / f (frequency) to 34.64 to 36.09 mm. The patch electrode that best matches the outer diameter will be adjusted.
In addition, since the conventional magnetron method can generate unnecessary harmonics, depending on the performance of the magnetron, electromagnetic waves may reach unintended human body depth, but a semiconductor switching circuit with an excellent Q value is required. By using it, the defect is corrected and the affected part can be treated correctly.
なお、半導体素子の効率ロス分は、半導体素子に取付けられた放熱フィン５等を介して放熱されるが、図３に示すように、当該放熱フィン５の配置を、半導体素子１とアンテナ３の間に物理的に配置することで、スイッチングに伴う発生ノイズがアンテナに及ぶのを抑制することができ、不要輻射の抑制を更に改善することができる。 The efficiency loss of the semiconductor element is radiated through the radiation fins 5 attached to the semiconductor element. As shown in FIG. 3, the arrangement of the radiation fins 5 is different between the semiconductor element 1 and the antenna 3. By physically disposing them between them, it is possible to suppress the noise generated by switching from reaching the antenna, and to further suppress the suppression of unnecessary radiation.
以下、本発明の一実施例について説明する。本実施例は、図４に示すように、マイクロ波半導体発振回路は、アンプとなる半導体スイッチング素子１３と、この半導体スイッチング素子１３に対して、信号発生及び信号が可変出来る信号発生部１１（VCO:電圧制御発振器)と、信号発生部１１の出力を調整するアンプ１２と、半導体スイッチング素子の入力側に設けられるゲート電圧制御回路１６と、半導体スイッチング素子１３の出力側に設けられて反射等を防止するアイソレータ１４と、進行波に対して反射波を取り出す方向性結合器１５（若しくはリターンロスブリッジ）と半導体スイッチング素子１３への給電を行う電源回路１７で構成する。 Hereinafter, an embodiment of the present invention will be described. In this embodiment, as shown in FIG. 4, the microwave semiconductor oscillation circuit includes a semiconductor switching element 13 that serves as an amplifier, and a signal generator 11 (VCO) that can change the signal generation and signal with respect to the semiconductor switching element 13. Voltage control oscillator), an amplifier 12 for adjusting the output of the signal generator 11, a gate voltage control circuit 16 provided on the input side of the semiconductor switching element, and a reflection provided on the output side of the semiconductor switching element 13. An isolator 14 for prevention, a directional coupler 15 (or a return loss bridge) that extracts a reflected wave with respect to a traveling wave, and a power supply circuit 17 that supplies power to the semiconductor switching element 13 are configured.
信号発生部1１より、マイクロ波帯域の基本周波数、例えば２．４５ＧＨｚを出力し、その出力をアンプ１２で調整する。信号発生部１１及びアンプ１２の信号を半導体スイッチング素子１３でスイッチング制御して電力を増幅する。半導体スイッチング素子１３には、ＬＤＭＯＳＦＥＴ，ＧａＡｓＦＥＴ、ＧａＮＦＥＴ等のＦＥＴを使用する。ＦＥＴのゲートに信号発生部１１から出力された２．４５ＧＨｚの信号が印加され、ドレインに電圧供給部からの駆動電圧が印加され、増幅された２．４５ＧＨｚのマイクロ波がアンテナから出力される。 A fundamental frequency in the microwave band, for example, 2.45 GHz, is output from the signal generation unit 11, and the output is adjusted by the amplifier 12. The signals of the signal generator 11 and the amplifier 12 are controlled by the semiconductor switching element 13 to amplify the power. As the semiconductor switching element 13, an FET such as an LDMOSFET, a GaAsFET, or a GaNFET is used. The 2.45 GHz signal output from the signal generation unit 11 is applied to the gate of the FET, the drive voltage from the voltage supply unit is applied to the drain, and the amplified 2.45 GHz microwave is output from the antenna.
また、方向性結合器１５は、伝送路上に流れる信号を、進行波と反射波に分けて取り出す事ができる。アンテナと半導体発振器間の伝送線路に方向性結合器１５を挿入して，その電圧・電流を取り出し、進行波電力と反射波電力をそれぞれ測定し，その差から実際にアンテナに供給される電力を求める。方向性結合器１５より取り出された進行波と反射波の電力をアナログデジタル変換回路１８で変換する。その電力を制御回路１６にて比較し、反射が大きい場合は、反射波の電力が小さくなるように、信号発生部１１の電圧を制御し、発振周波数を２．４ＧＨｚから、２．５ＧＨｚの範囲で可変し、ＶＳＷＲが１．５となる周波数を選択する。 In addition, the directional coupler 15 can extract a signal flowing on the transmission path by separating it into a traveling wave and a reflected wave. The directional coupler 15 is inserted into the transmission line between the antenna and the semiconductor oscillator, the voltage / current is taken out, the traveling wave power and the reflected wave power are measured, and the power actually supplied to the antenna is calculated from the difference. Ask. The power of the traveling wave and the reflected wave taken out from the directional coupler 15 is converted by the analog / digital conversion circuit 18. The power is compared by the control circuit 16, and when the reflection is large, the voltage of the signal generator 11 is controlled so that the power of the reflected wave is small, and the oscillation frequency is in the range from 2.4 GHz to 2.5 GHz. The frequency at which VSWR is 1.5 is selected.
また、アンテナ部と人体との距離に於けるVSWRの良い中心周波数は近傍界ではアンテナ長（λ/2）の整数倍時で効いており、人体から離れ遠方界になると空中放射に近づく為、2450MHz近辺で安定する。不要輻射を極力抑える事も意図し、アンテナ-患部間はアンテナ長の整数倍の距離であるλ/4、λ/2 (30mm、60mm) とする。また、アンテナに関しては、人体の比誘電率を考慮した形状とすることが望ましく、皮膚組織を想定したアンテナ形状にする必要がある。そのため、アンテナ波長122mmのλ/2である61mmに比誘電率を考慮した放射板とする。脂肪等の比誘電率は5.5であり、λ/2である61mmをこの値の平方根で割った一辺とするので、一辺が26mmの放射板のアンテナとしている。なお、VSWRを調整する際に、必要に応じて、患部を想定した位置に、直径 20 cm，長さ 50 cmの低損失材（例えば，メタクリル樹脂）で作った円柱形容器に0.9％の食塩水を満たした状態をファントムとして各種データを測定する方法が用いられる。 Also, the good center frequency of VSWR at the distance between the antenna part and the human body is effective in the near field when it is an integer multiple of the antenna length (λ / 2). Stable near 2450MHz. In order to suppress unnecessary radiation as much as possible, the distance between the antenna and the affected area is λ / 4, λ / 2 (30mm, 60mm), which is an integral multiple of the antenna length. Further, it is desirable that the antenna has a shape that takes into account the relative permittivity of the human body, and it is necessary to have an antenna shape that assumes skin tissue. For this reason, the radiation plate takes into consideration the relative dielectric constant at 61 mm, which is λ / 2 of the antenna wavelength 122 mm. The relative permittivity of fat or the like is 5.5, and 61 mm, which is λ / 2, is divided by the square root of this value, so that it is an antenna of a radiation plate having a side of 26 mm. When adjusting the VSWR, if necessary, place 0.9% salt in a cylindrical container made of a low-loss material (for example, methacrylic resin) with a diameter of 20 cm and a length of 50 cm at the position where the affected area is assumed. A method of measuring various data using a state filled with water as a phantom is used.
VSWRを最良な値にする為には、伝送路（同軸ケーブル）を極力最短で結ぶことが望ましいが、マグネトロンを使用した場合には、駆動回路等が大型であるため、伝送路である同軸ケーブルが必要となり、マグネトロンをアンテナに直結することは困難である。この点、本実施例では、半導体スイッチング素子１３を使用することで、マイクロ波の出力を安定させ、不要輻射を低減するものであり、同時に、小型化を可能とするものである。そのため、人体の近辺に駆動部を配置することも可能であり、アンテナ部と駆動部を一体化、小型化して、モバイル性を高めることも可能となる。 In order to obtain the best value for VSWR, it is desirable to connect the transmission line (coaxial cable) as short as possible. However, when a magnetron is used, the drive circuit is large, so the coaxial cable is the transmission line. It is difficult to directly connect the magnetron to the antenna. In this respect, in the present embodiment, the use of the semiconductor switching element 13 stabilizes the microwave output and reduces unnecessary radiation, and at the same time enables miniaturization. For this reason, it is possible to dispose the drive unit in the vicinity of the human body, and it is possible to improve mobility by integrating and miniaturizing the antenna unit and the drive unit.
また、アンテナ形状や、アンテナと患部との距離を調整することで、VSWRを良好として、不要輻射を低減することができるが、例えば、アンテナ-患部間の距離を的確に規定するために、放射板−誘電体−導体地板 の三層構成を有するパッチアンテナを使用した場合、放射板は誘電体を空気とする為、比誘電率ε＝１として、λ/2である61mmを一辺とした寸法とする。また、アンテナ-患部間はアンテナ長の整数倍の距離とするが、不要輻射を極力抑える事を意図し、λ/4またはλ/2の距離とする。具体的には、表１より30mmまたは60mmとする。なお、表１は、周波数を２２００〜２９００MHzまで可変した際に、アンテナから人体までの距離（10ｍｍ〜60ｍｍ）に応じて、VSWRがどのように変化するかを調べたものである。 Also, by adjusting the antenna shape and the distance between the antenna and the affected area, the VSWR can be improved and unnecessary radiation can be reduced. For example, in order to accurately define the distance between the antenna and the affected area, radiation When a patch antenna having a three-layer structure of plate-dielectric-conductor ground plane is used, since the radiation plate uses dielectric as air, the relative permittivity ε = 1 and λ / 2 of 61 mm as one side And The distance between the antenna and the affected area is an integral multiple of the antenna length, but the distance is λ / 4 or λ / 2 in order to suppress unnecessary radiation as much as possible. Specifically, it is set to 30 mm or 60 mm from Table 1. Table 1 shows how the VSWR changes according to the distance (10 mm to 60 mm) from the antenna to the human body when the frequency is varied from 2200 to 2900 MHz.
また、マイクロ波治療器はマイクロ波を生体組織に放射して加温する温熱治療器であるが、低出力（10W）のマイクロ波を照射した場合には、高出力（200W）のマイクロ波を出力した場合と比較して、生体組織（たんぱく質等）への異なる影響があるものと考えられている。この点、半導体発振方式は、高速スイッチングによるデューティー制御が可能であり、リップルを0.1％以下に抑えつつ、低出力制御を行い、患者の状態に応じた出力制御を行うことが比較的安易である。また、半導体発振方式によれば、交互に、高出力と低出力を瞬時に切り替えることが可能であり、例えば、低出力を主体に制御しつつ、所望の時間帯に、一時的に高出力制御を交える等の制御も可能であり、患者の状態に応じて、よりきめ細かな出力制御が可能となる。 A microwave therapy device is a thermotherapy device that radiates and heats microwaves to living tissue. When a microwave with a low output (10W) is irradiated, a microwave with a high output (200W) is applied. Compared to the case of outputting, it is considered that there is a different influence on the living tissue (protein etc.). In this respect, the semiconductor oscillation method is capable of duty control by high-speed switching, and it is relatively easy to perform output control according to the patient's condition by performing low output control while suppressing ripple to 0.1% or less. . In addition, according to the semiconductor oscillation method, it is possible to instantaneously switch between high output and low output alternately. For example, the high output control is temporarily performed in a desired time zone while mainly controlling the low output. Can be controlled, and more detailed output control is possible according to the patient's condition.
１ 半導体発振回路
２ 方向性結合器
３ アンテナ
１１ 信号発生部
１３ 半導体スイッチング素子
１５ 方向性結合器
DESCRIPTION OF SYMBOLS 1 Semiconductor oscillation circuit 2 Directional coupler 3 Antenna 11 Signal generation part 13 Semiconductor switching element 15 Directional coupler
Claims (8)
The microwave therapy device according to claim 1, wherein a patch antenna is used for the antenna unit, and the distance from the patch antenna to the affected part is changed according to the oscillation frequency of the semiconductor element.
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