JP2018056377A - Electronic device and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device including nanowire diodes which has satisfactory mechanical strength and superior high frequency characteristics.SOLUTION: The electronic device includes: a nanowire diode 3; a nanowire aggregation 4 including plural nanowires 4a with the surface covered with an insulation film 4b, which are separated from the nanowire diode 3; and an electrode 6 that bridges between one end part 6a electrically connected to a parietal part of the nanowire diode 3 and the other end part 6b which is in contact with the insulation film 4b of the parietal part of at least a part of the nanowires 4a constituting the nanowire aggregation 4.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an electronic device and a manufacturing method thereof.

  A backward diode made of a pn semiconductor having a tunnel junction is used as an electronic device that receives radio waves such as wireless communication. In order to suppress a loss and handle a high frequency, a backward diode is usually reduced in capacity by processing a pn semiconductor laminated thin film into a mesa shape and reducing the size. As an electrode of the backward diode, an air bridge structure (air bridge electrode) is used with respect to the surface side electrode.

  As a method for improving the frequency characteristics of the backward diode part, a vertical backward type nanowire diode having a diameter of submicron has been proposed in place of the conventional mesa-shaped backward diode of micrometer order size. In this backward-type nanowire diode, the pn junction area is significantly reduced as compared with a mesa-shaped backward diode.

JP 2009-152474 A Special table 2015-529006 gazette

However, when the conventional air bridge electrode is applied to the backward nanowire diode as it is, the following problems occur.
First, it is extremely difficult in the manufacturing process to form an air bridge electrode extending between the top of a very thin nanowire diode standing on the substrate and the substrate. Further, when such an air bridge electrode is formed, a large load due to the stress and weight of the air bridge electrode is applied to the nanowire diode, and the strength of the nanowire diode cannot be maintained, or the characteristics are significantly deteriorated.

  The present invention has been made in view of the above problems, and an object thereof is to provide a highly reliable electronic device including a nanowire diode having sufficient mechanical strength and excellent high frequency characteristics.

  One aspect of the electronic device is electrically connected to a nanowire diode, a nanowire assembly that is separated from the nanowire diode and has a surface covered with an insulating film, and the top of the nanowire diode. And an electrode that bridges the other end contacting the insulating film at the top of at least a part of the nanowires constituting the nanowire aggregate.

  One aspect of a method for manufacturing an electronic device includes a step of forming a nanowire diode and a nanowire assembly spaced apart from the nanowire diode and provided with a plurality of vertical nanowires separated from each other, and the nanowire assembly Covering the surface of the nanowire of the body with an insulating film; one end electrically connected to the top of the nanowire diode; and the top of the top of the nanowire constituting the nanowire assembly. Forming an electrode for bridging the other end in contact with the film.

  According to the present invention, a highly reliable semiconductor device including a nanowire diode having sufficient mechanical strength and excellent high frequency characteristics is realized.

It is a schematic diagram which shows schematic structure of the electronic device by 1st Embodiment. It is a schematic perspective view for demonstrating the effect produced by the electronic device by this embodiment based on a comparison with a comparative example. It is a schematic sectional drawing which shows the manufacturing method of the electronic device by 1st Embodiment in order of a process. FIG. 4 is a schematic cross-sectional view subsequent to FIG. 3, illustrating the method for manufacturing the electronic device according to the first embodiment in the order of steps. It is a schematic diagram which shows schematic structure of the electronic device by the modification 1 of 1st Embodiment. It is a schematic diagram which shows schematic structure of the electronic device by the modification 2 of 1st Embodiment. It is a schematic diagram which shows schematic structure of the electronic device by the modification 3 of 1st Embodiment. It is a schematic diagram which shows schematic structure of the electromagnetic wave receiver by 2nd Embodiment. It is a schematic diagram which shows schematic structure of the generator by 3rd Embodiment.

(First embodiment)
In the present embodiment, an electronic device and a manufacturing method thereof will be described in detail with reference to the drawings.

[Configuration of electronic device]
FIG. 1 is a schematic diagram illustrating a schematic configuration of an electronic device according to the first embodiment, in which (a) is a perspective view, (b) is a plan view, and (c) is a cross-sectional view. In FIG. 1C, the illustration of a part of the lower electrode is omitted in consideration of the visibility of the drawing.

  The electronic device includes, for example, a backward nanowire diode 3, a nanowire assembly 4, a lower electrode 5, and an upper electrode 6 via an n-type semiconductor layer 2 and a growth mask 10 above a semi-insulating substrate 1. It is comprised. The nanowire diode 3 and the lower electrode 5 are electrically connected to the n-type semiconductor layer 2. In FIG. 1A, the growth mask 10 is not shown.

  The backward-type nanowire diode 3 is a nanowire having a vertical structure in which an n-type nanowire 3a, for example, n-InGaAs, and a p-type nanowire 3b, for example, p-GaAsSb, are pn-junctioned. The nanowire diode may be configured as a pin junction via an i-type semiconductor instead of the pn junction.

  The nanowire aggregate 4 is formed by aggregating a plurality of vertical nanowires 4a whose surfaces are covered with an insulating film 4b. Each nanowire 4a is formed at the same time as the nanowire diode 3, is made of the same material and shape as the nanowire diode 3, and stands upright apart from each other. Since the surface of each nanowire 4a is covered with the insulating film 4b, the electrical characteristics of the nanowire diode 3 are not affected. Since each nanowire 4a has the same structure as the nanowire diode 3, they are set to the same height, and are higher than the nanowire diode 3 by the thickness of the insulating film 4b. Each nanowire may be formed in a separate process from the nanowire diode 3, and may have a nanowire structure different from the nanowire diode 3.

  The lower electrode 5 is formed on the n-type semiconductor layer 2 using, for example, gold (Au) as a material. The nanowire diode 3 is erected in contact with the lower electrode 5 and is electrically connected to the lower electrode 4.

  The upper electrode 6 has one end 6 a electrically connected to the top of the nanowire diode 3 and the other end fixed to the insulating film 4 b at the top of at least some of the nanowires 4 a constituting the nanowire assembly 4. It is an electrode of an air bridge structure that bridges the portion 6b. The other end 6 b is an electrode pad for the upper electrode 6. A gap 6c is formed below one end 6a and the other end 6b of the upper electrode 6. The nanowire assembly 4 functions as a support member that supports the other end 6b of the upper electrode 6 having an air bridge structure. Therefore, the first distance between the one end 6 a and the other end 6 b of the upper electrode 6 is larger than the second distance between the adjacent nanowires 4 a in the nanowire assembly 4.

  Here, the effect which the electronic device by this embodiment show | plays is demonstrated based on a comparison with a comparative example. 2A and 2B are perspective views for explaining the function and effect, in which FIG. 2A shows an electronic device of a comparative example, and FIG. 2B shows an electronic device of the present embodiment.

The electronic device of the comparative example includes a backward nanowire diode 103, a lower electrode 104, and an upper electrode 105 via an n-type semiconductor layer 102 above a substrate 101.
The nanowire diode 103 and the lower electrode 104 are formed in the same manner as the nanowire diode 3 and the lower electrode 50 of the present embodiment. The upper electrode 105 is an air bridge structure electrode that bridges the one end portion 105 a electrically connected to the top of the nanowire diode 103 and the other end portion 105 b fixed in contact with the n-type semiconductor layer 102. A gap 105c is formed below the upper electrode 105 between one end 105a and the other end 105b.

  Through intensive studies, it has been found that the main factor of the load that causes the characteristic deterioration of the electronic device in the comparative example is a downward stress component acting on the nanowire diode 103. In the comparative example, the other end portion 105 b that is an electrode pad of the upper electrode 105 is formed on the surface of the substrate 101, so that the upper electrode 105 is drawn obliquely downward from the one end portion 105 a on the nanowire diode 103. . As a result, a downward stress acts when the upper electrode 105 contracts, and the stress acts on the nanowire diode 103 as a bending stress.

  On the other hand, in the electronic device of the present embodiment, by providing the nanowire assembly 4, the electrode pad of the other end 6b is disposed at a position higher than the top of the nanowire diode 3 by the thickness of the insulating film 3b. The The upper electrode 6 is bridged from the top of the nanowire diode 3 to the top of the nanowire assembly 4. In this structure, as shown in FIG. 2B, the downward stress component disappears and no bending stress is applied to the nanowire diode 3.

  In the electronic device of the present embodiment, the nanowire assembly 4 is composed of a plurality of nanowires 4a, and not only the nanowire diode 3 but also each nanowire 4a can be elastically deformed. Therefore, the stress load of the lateral component on the nanowire diode 3 is also greatly reduced.

  As described above, in this embodiment, bending stress is not applied to the nanowire diode 3, and the stress load of the lateral component is greatly reduced. With this configuration, a high-performance electronic device that provides sufficient mechanical strength of the nanowire diode 3 without impairing the excellent high-frequency characteristics of the nanowire diode 3 having a small cross-sectional area is realized.

[Electronic device manufacturing method]
Next, the method for manufacturing the electronic device according to the present embodiment will be described. 3 to 4 are schematic cross-sectional views illustrating the method of manufacturing the electronic device according to the present embodiment in the order of steps. In each of FIGS. 3 and 4, a part of the lower electrode is not shown for easy viewing.

First, as shown in FIG. 3A, an n-type semiconductor layer 12, a growth mask 13, and a growth catalyst 14 are sequentially formed on a substrate 11.
Specifically, for example, a semi-insulating (SI) -GaAs (111) B substrate 11 is prepared. An n-InGaAs layer, for example, is grown on the substrate 11 to a thickness of about 100 nm by, for example, metal organic chemical vapor deposition (MOCVD). For doping of the n-type impurity, for example, Si is used, and the Si concentration may be set to about 1 × 10 ¹⁸ to 1 × 10 ²⁰ cm ^−3, for example. Thus, the n-type semiconductor layer 12 is formed on the substrate 11.

Next, SiN is deposited to a thickness of about 50 nm by, eg, CVD. An opening 13a and a plurality of openings 13b are formed by lithography and etching at a portion where the nanowire grows in SiN. The opening 13a is a nanowire diode, and the plurality of openings 13b are places where nanowires of a nanowire aggregate are formed. The openings 13a and 13b are formed in the same size and shape. Each opening 13b has an interval of about 1 μm to 10 μm and a numerical aperture of about 9 to 100, for example. By forming the plurality of openings 13b in this way, an electrode pad that becomes the other end of the upper electrode of the air bridge structure to be formed later can be formed in a size of about 10 × 10 to 100 × 100 μm ² . The distance between the openings 13a and 13b is, for example, about 10 μm to 100 μm. Thus, the growth mask 13 is formed.

  Next, a metal material to be a growth catalyst 14 is deposited in the opening 12 a of the growth mask 13. The disk diameter of the metal material is preferably about 20 nm to 100 nm, and for example, gold (Au) is used as the metal material.

Subsequently, as shown in FIG. 3B, the backward nanowire diode 15 and the plurality of nanowires 16 are formed in the same process.
Specifically, a heterojunction nanowire made of, for example, n-InGaAs 15a and p-GaAsSb15b is grown at, for example, a growth temperature of about 450 ° C. to 550 ° C. by, for example, metal organic vapor phase epitaxy (MOVPE). . Trimethyindium (TMIn), triethylgallium (TEGa), arsine (AsH ₃ ), and trimethylantimony (TMSb) are used as raw materials. For n-type doping, sulfur (S) is doped by supplying hydrogen sulfide (H ₂ S) during growth. The S concentration is, for example, 1 × 10 ¹⁸ to 1 × 10 ²⁰ cm ⁻³ . For doping of the p-type impurity, zinc (Zn) is doped by supplying diethyl zinc (DEZn) during growth. The Zn concentration is, for example, 1 × 10 ¹⁸ to 1 × 10 ²⁰ cm ⁻³ . By appropriately controlling the doping concentration and the band gap, a tunnel junction can be formed and function as a backward diode. As described above, the nanowire diodes 15 are formed in the openings 13a of the growth mask 13, and the plurality of nanowires 16 that form a nanowire aggregate are formed in the plurality of openings 13b.

Subsequently, as illustrated in FIG. 3C, an insulating film 17 that covers each of the plurality of nanowires 16 is formed.
Specifically, the growth catalyst 14 is first removed by etching.
Next, a resist mask is formed that covers the nanowire diode 15 and has openings that expose the plurality of nanowires 16. Using this resist mask, for example, Al ₂ O ₃ is deposited as an insulating material to a thickness of about 5 nm by, for example, atomic layer deposition (ALD). The resist mask and Al ₂ O ₃ thereon are removed by chemical treatment or ashing treatment. Thus, the insulating film 17 covering each of the plurality of nanowires 16 is formed. A plurality of nanowires 16 covered with the insulating film 17 constitute a nanowire assembly 18.

Subsequently, as shown in FIG. 3D, the lower electrode 19 is formed.
Specifically, first, an opening 13c is formed in the growth mask 13 by lithography and etching.
Next, a resist mask is formed which covers the nanowire diode 15 and the nanowire aggregate 18 and opens a portion where the lower electrode including the opening 13c is to be formed. Using this resist mask, an electrode metal, here gold (Au), for example, is deposited by vapor deposition. The resist mask and Au thereon are removed by chemical treatment or ashing treatment. Thus, the lower electrode 19 electrically connected to the nanowire diode 15 is formed.

Subsequently, as shown in FIG. 4A, a resin 21 covering the entire surface of the substrate 11 is formed.
Subsequently, as illustrated in FIG. 4B, the surface of the resin 21 is exposed so that the top of the nanowire diode 15 and the top of the nanowire 16 in the nanowire assembly 18 are exposed from the surface of the resin 21. To polish.

Subsequently, as shown in FIG. 4C, the upper electrode 22 is formed.
Specifically, an electrode metal, here gold (Au), is deposited on the entire surface of the resin 21 by, for example, vapor deposition. Au is processed by lithography and etching. As described above, the upper electrode 22 is formed on the resin 21. One end 22 a of the upper electrode 22 is electrically connected to the top of the nanowire diode 15, and the other end 22 b is fixed to the insulating film 17 on the top of the intended nanowire 16 of the nanowire assembly 18. Thus, the gap extends between the one end 22a and the other end 22b.

  Subsequently, as shown in FIG. 4D, unnecessary resin 21 is removed. As a result, a gap 22c is formed below the upper electrode 22 between the one end 22a and the other end 22b, and the upper electrode 22 has an air bridge structure. As described above, the electronic device of this embodiment is formed.

  According to the present embodiment, the nanowires 16 of the nanowire assembly 18 can be simultaneously formed in the same process as the nanowire diode 15. Therefore, the nanowire aggregate 18 can be easily formed without increasing the number of steps.

  In the present embodiment, the nanowire diode 15 is configured by one nanowire, but is not limited thereto, and a nanowire diode including a plurality of heterojunction nanowires may be used. The constituent material of the nanowire 16 of the nanowire diode 15 and the nanowire assembly 18 is not limited to the heterojunction of n-InGaAs and p-GaAsSb, and a known configuration can be used. For example, a structure such as p-GaSb / i-GaAs / n-InAs can also be used. By performing crystal growth a plurality of times, different materials can be used as the nanowire material of the nanowire diode and the nanowire assembly. In this case, as a nanowire material of the nanowire aggregate, a group IV semiconductor such as Si or Ge can be used in addition to a group III-V compound semiconductor such as InP, GaAs, or InN. A similar selection is possible for the substrate. Further, the diode structure is not limited to the backward type nanowire diode, and, for example, a Schottky barrier type nanowire diode can be used.

(Modification)
Hereinafter, various modifications of the first embodiment will be described.

-Modification 1-
FIG. 5 is a schematic diagram illustrating a schematic configuration of an electronic device according to Modification 1 of the first embodiment, in which (a) is a plan view and (b) is a cross-sectional view. In FIG. 5 (b), the illustration of a part of the lower electrode is omitted in consideration of the visibility of the drawing. In addition, about the structural member etc. similar to 1st Embodiment, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

  Similar to the first embodiment, this electronic device includes a backward nanowire diode 3 and a nanowire assembly 4 via an n-type semiconductor layer 2 and a growth mask 10 above a semi-insulating substrate 1, for example. , A lower electrode 5 and an upper electrode 6. Furthermore, an intermediate nanowire 31 is provided as another nanowire. The nanowire diode 3 and the lower electrode 5 are electrically connected to the n-type semiconductor layer 2.

  The intermediate nanowire 31 has the same material and shape as the nanowire 4 a of the nanowire assembly 4, and is provided upright in the gap 6 c between the one end 6 a and the other end 6 b of the upper electrode 6. The surface of the intermediate nanowire 31 is covered with an insulating film 32, similarly to the nanowire 4 a of the nanowire assembly 4. The upper electrode 6 has one end 6 a electrically connected to the top of the nanowire diode 3 and the other end fixed to the insulating film 4 b at the top of at least some of the nanowires 4 a constituting the nanowire assembly 4. It is an electrode of an air bridge structure that bridges the portion 6b. In the present embodiment, between the one end portion 6 a and the other end portion 6 b, the back surface of the upper electrode 6 is reinforced by being in contact with the insulating film 32 at the top of the intermediate nanowire 31.

  The intermediate nanowire 31 is formed in the same process as the nanowire diode 3 and the nanowire 4 a of the nanowire assembly 4. The intermediate nanowire 31 is covered with the insulating film 32 in the same process as the covering of the nanowire 4a with the insulating film 4b.

  In the electronic device of Modification 1, no bending stress is applied to the nanowire diode 3, and the stress load of the lateral component is greatly reduced. With this configuration, a high-performance electronic device that provides sufficient mechanical strength of the nanowire diode 3 without impairing the excellent high-frequency characteristics of the nanowire diode 3 having a small cross-sectional area is realized.

  When the bridge distance of the upper electrode of the air bridge structure is increased, the air bridge portion is bent due to the weight of the upper electrode. Therefore, even if the upper electrode is supported by a nanowire having substantially the same length as the nanowire diode, downward stress may be generated in the nanowire diode. In the first modification, the air bridge portion of the upper electrode 6 is supported by the intermediate nanowire 31, thereby suppressing the deflection of the upper electrode 6 and obtaining a good nanowire diode. By arranging the intermediate nanowire 31 so that the distance to the nanowire diode 3 and the distance to the nanowire 4a are about 1 μm to 10 μm, a sufficient effect as a support portion can be obtained.

-Modification 2-
6A and 6B are schematic views illustrating a schematic configuration of an electronic device according to Modification 2 of the first embodiment, in which FIG. 6A is a plan view and FIG. 6B is a cross-sectional view. In FIG. 6 (b), the illustration of a part of the lower electrode is omitted in consideration of easy viewing of the drawing. In addition, about the structural member etc. similar to 1st Embodiment, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

  The electronic device includes, for example, a backward nanowire diode 3, a nanowire assembly 41, a lower electrode 5, and an upper electrode 6 via an n-type semiconductor layer 2 and a growth mask 10 above a semi-insulating substrate 1. It is comprised. The nanowire diode 3 and the lower electrode 5 are electrically connected to the n-type semiconductor layer 2.

  The nanowire aggregate 41 is formed by aggregating a plurality of vertical nanowires 41a whose surfaces are covered with an insulating film 41b. Since the surface of each nanowire 41a is covered with the insulating film 41b, the electrical characteristics of the nanowire diode 3 are not affected. Each nanowire 41a is made of the same material as the nanowire diode 3, but is formed higher (longer) than the nanowire diode 3.

  The upper electrode 6 has one end 6 a electrically connected to the top of the nanowire diode 3 and the other end fixed to the insulating film 41 b at the top of at least some of the nanowires 41 a constituting the nanowire assembly 41. It is an electrode of an air bridge structure that bridges the portion 6b. Since the nanowire 41a of the nanowire assembly 41 is formed higher than the nanowire diode 3, the upper electrode 6 has a slope that gradually rises from the one end 6a to the other end 6b.

  The nanowire diode 3 and the nanowire 41a may be formed by performing crystal growth separately in different processes. For example, by changing the diameter between the nanowire diode 3 and the nanowire 41a, they can be simultaneously formed in the same process. It is. For example, the diameter of the nanowire diode 3 is set to about 50 nm, the diameter of the nanowire 41a is set to about 100 nm, and the crystal is grown under low temperature growth conditions around 450 ° C., which is a temperature at which the decomposition efficiency of the raw material is limited by the mask coverage. Then, the growth speed of the nanowire 41a having a larger opening area and the exposed semiconductor surface is faster than that of the nanowire diode 3, and as a result, the nanowire diode 3 and the nanowire 41a having different heights can be formed in the same process. .

  In the electronic device of Modification 2, no bending stress is applied to the nanowire diode 3, and the stress load of the lateral component is greatly reduced. With this configuration, a high-performance electronic device that provides sufficient mechanical strength of the nanowire diode 3 without impairing the excellent high-frequency characteristics of the nanowire diode 3 having a small cross-sectional area is realized.

  In the second modification, the nanowire 41 a of the nanowire assembly 41 is formed higher than the nanowire diode 3. Thereby, the application of the downward stress component to the nanowire diode 3 completely disappears. In addition, since the higher nanowire assembly 41 is disposed in the vicinity of the nanowire diode 3, the top of the nanowire diode 3 and the upper electrode 6 are protected.

-Modification 3-
FIG. 7 is a plan view illustrating a schematic configuration of an electronic device according to Modification 3 of the first embodiment. In addition, about the structural member etc. similar to 1st Embodiment, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

  Similar to the first embodiment, this electronic device includes a backward nanowire diode 3 and a nanowire assembly 4 via an n-type semiconductor layer 2 and a growth mask 10 above a semi-insulating substrate 1, for example. , A lower electrode 5 and an upper electrode 6. Furthermore, as other nanowire aggregates, a plurality of, here, three nanowire aggregates 51, 52, 53 are provided so as to surround the nanowire diode 3. The nanowire diode 3 and the lower electrode 5 are electrically connected to the n-type semiconductor layer 2.

  The nanowire aggregates 51 to 53 are arranged so as to surround the four sides of the nanowire diode 3 together with the nanowire aggregate 4. The nanowire aggregates 51 to 53 have the same structure as that of the nanowire aggregate 4, that is, the same number of nanowires 51 a, 52 a, 53 a as the nanowire 4 a of the nanowire aggregate 4 are covered with insulating films 51 b, 52 b, 53 b. Yes. The nanowire assemblies 51 to 53 are configured by being arranged in the same arrangement form as the nanowire assemblies 4. It should be noted that the present invention is not limited to this form, and the arrangement of the nanowire aggregates and the material / shape of the nanowires of other nanowire aggregates can be appropriately changed.

  In the electronic device of Modification 3, no bending stress is applied to the nanowire diode 3, and the stress load of the lateral component is greatly reduced. With this configuration, a high-performance electronic device that provides sufficient mechanical strength of the nanowire diode 3 without impairing the excellent high-frequency characteristics of the nanowire diode 3 having a small cross-sectional area is realized.

  In Modification 3, the nanowire assemblies 51 to 53 are arranged so as to surround the nanowire diode 3 together with the nanowire assembly 4. With this configuration, even when the electronic device falls, the top of the nanowire diode 3 and the upper electrode 6 are protected by the nanowire assemblies 4 and 51 to 53 and are prevented from being damaged.

(Second Embodiment)
In the present embodiment, a radio wave receiver of a so-called ultra-high capacity wireless communication system including a diode structure that is an electronic device according to the first embodiment or one of various modifications is illustrated. FIG. 8 is a schematic diagram showing a schematic configuration of the radio wave receiver according to the present embodiment.

  The radio wave receiver includes a receiving antenna 61, a low noise amplifier 62 connected to the receiving antenna 61, a diode 63 connected to the low noise amplifier 62, an inductor 64 connected to the low noise amplifier 62, and an output terminal 65. ing. The diode 63 has a diode structure according to one type of the first embodiment or various modifications.

  Since the nanowire diode has a smaller junction capacitance than a conventional diode, it can receive radio waves up to the terahertz wave band region. By applying to the diode 63 a high-performance diode structure that provides sufficient mechanical strength of the nanowire diode without impairing the excellent high frequency characteristics of the nanowire diode, a highly reliable ultra-high capacity wireless communication network system is realized. .

(Third embodiment)
In the present embodiment, a generator of a so-called IoT (Internet of Things) sensor including a diode structure that is an electronic device according to the first embodiment or one of various modifications is illustrated. FIG. 9 is a schematic diagram showing a schematic configuration of the generator according to the present embodiment.

  The generator includes a receiving antenna 71, a diode 72 connected to the receiving antenna 71, a smoothing capacitor 73 connected to the diode 72, a voltage stabilization circuit 74 connected to the diode 72, and an output terminal 75. ing.

  The receiving antenna 71 is an antenna that receives, for example, microwaves as energy. The diode 72 has a diode structure according to one type of the first embodiment or various modifications, and full-wave rectifies the microwave incident from the receiving antenna 71. The smoothing capacitor 73 provides a stable DC (direct current) output. The voltage stabilizing circuit 74 sets the DC output to a constant value. The output terminal 75 is connected to a power source of the IoT sensor, and a DC output having a constant value is supplied to the power source.

  In the power generator according to the present embodiment, a high-performance diode structure that provides sufficient mechanical strength of the nanowire diode without impairing the excellent high-frequency characteristics of the nanowire diode is applied to the diode 72. This configuration improves energy conversion efficiency and contributes to highly efficient harvesting of micro power such as microwaves. Thereby, the IoT sensor which can be operated with low power can be driven with high efficiency without using a battery or the like.

  Hereinafter, various aspects of the electronic device, the manufacturing method thereof, the radio wave receiver, and the generator will be collectively described as appendices.

(Supplementary note 1) Nanowire diode,
A nanowire assembly consisting of a plurality of nanowires separated from the nanowire diode and having a surface coated with an insulating film;
An electrode that cross-links one end electrically connected to the top of the nanowire diode and the other end in contact with the insulating film of at least a part of the top of the nanowire constituting the nanowire aggregate. An electronic device comprising:

  (Supplementary note 2) The first distance between the one end portion and the other end portion of the electrode is larger than a second distance between adjacent nanowires in the nanowire assembly. Electronic devices.

(Supplementary Note 3) Between the one end portion and the other end portion of the electrode, another nanowire whose surface is covered with another insulating material is disposed,
The electronic device according to appendix 1 or 2, wherein the other nanowire is in contact with the electrode through the other insulating material at the top of the head.

  (Additional remark 4) The said nanowire which comprises the said nanowire aggregate | assembly is higher than the said nanowire diode, The electronic device of any one of Additional remarks 1-3 characterized by the above-mentioned.

  (Supplementary note 5) Any one of Supplementary notes 1 to 4, wherein at least one other nanowire assembly in which a plurality of other nanowires are provided apart from each other is provided around the nanowire diode. The electronic device according to item.

(Appendix 6) A step of forming a nanowire diode and a nanowire assembly spaced apart from the nanowire diode and provided with a plurality of vertical nanowires separated from each other;
Coating the surface of the nanowire of the nanowire assembly with an insulating film;
Forming an electrode that bridges one end electrically connected to the top of the nanowire diode and the other end contacting the insulating film at the top of at least a part of the nanowire constituting the nanowire aggregate; A method for manufacturing an electronic device, comprising:

  (Supplementary note 7) The first distance between the one end portion and the other end portion of the electrode is larger than a second distance between the adjacent nanowires in the nanowire assembly. Electronic device manufacturing method.

(Appendix 8) Forming another nanowire between the one end and the other end of the electrode,
The method of manufacturing an electronic device according to appendix 6 or 7, wherein a surface of the other nanowire is covered with the insulating film together with the nanowire of the nanowire aggregate.

  (Additional remark 9) The said nanowire which comprises the said nanowire aggregate | assembly is higher than the said nanowire diode, The manufacturing method of the electronic device of any one of Additional remark 6-8 characterized by the above-mentioned.

  (Supplementary note 10) In any one of Supplementary notes 6 to 9, wherein at least one other nanowire assembly in which a plurality of other nanowires are provided apart from each other is formed around the nanowire diode. The manufacturing method of the electronic device of description.

(Supplementary note 11) a receiving antenna;
An amplifier connected to the receiving antenna;
A diode structure connected to the amplifier;
An inductor connected to the amplifier;
The diode structure is
Nanowire diodes,
A nanowire assembly consisting of a plurality of nanowires separated from the nanowire diode and having a surface coated with an insulating film;
An electrode that cross-links one end electrically connected to the top of the nanowire diode and the other end in contact with the insulating film of at least a part of the top of the nanowire constituting the nanowire aggregate. A radio wave receiving apparatus comprising:

(Supplementary note 12) a receiving antenna;
A diode structure connected to the receiving antenna;
A smoothing capacitor connected to the diode;
A voltage stabilizing circuit connected to the diode;
Including
The diode structure is
Nanowire diodes,
A nanowire assembly consisting of a plurality of nanowires separated from the nanowire diode and having a surface coated with an insulating film;
An electrode that cross-links one end electrically connected to the top of the nanowire diode and the other end in contact with the insulating film of at least a part of the top of the nanowire constituting the nanowire aggregate. A power generator characterized by including.

1, 11, 101 Substrate 2, 12, 102 n-type semiconductor layer 3, 15, 103 nanowire diode 3a n-type nanowire 3b p-type nanowire 4, 18, 41, 51, 52, 53 nanowire aggregate 4a, 16, 41a, 51a, 52a, 53a Nanowires 4b, 17, 32, 51b, 52b, 53b Insulating films 5, 19, 104 Lower electrodes 6, 22, 105 Upper electrodes 6a, 22a, 105a One end 6b, 22b, 105b The other end 6c, 22c, 105c Gap 10, 13 Growth masks 13a, 13b Opening 14 Growth catalyst 15a n-InGaAs
15b p-GaAsSb
21 Resin 31 Intermediate nanowire 61, 71 Receiving antenna 62 Low noise amplifier 63, 72 Diode 64 Inductor 65, 75 Output terminal 73 Smoothing capacitor 74 Voltage stabilization circuit

Claims (10)

Nanowire diodes,
A nanowire assembly consisting of a plurality of nanowires separated from the nanowire diode and having a surface coated with an insulating film;
An electrode that cross-links one end electrically connected to the top of the nanowire diode and the other end in contact with the insulating film of at least a part of the top of the nanowire constituting the nanowire aggregate. An electronic device comprising:   2. The electronic device according to claim 1, wherein a first distance between the one end portion and the other end portion of the electrode is larger than a second distance between adjacent nanowires in the nanowire assembly. Between the one end portion and the other end portion of the electrode, another nanowire whose surface is covered with another insulating material is disposed,
The electronic device according to claim 1, wherein the other nanowire is in contact with the electrode through the other insulating material at the top of the head.   The electronic device according to claim 1, wherein the nanowire constituting the nanowire aggregate is higher than the nanowire diode.   5. The at least one other nanowire assembly in which a plurality of other nanowires are provided separately from each other is provided around the nanowire diode. 6. Electronic devices. Forming a nanowire diode and a nanowire assembly spaced apart from the nanowire diode and provided with a plurality of vertical nanowires separated from each other;
Coating the surface of the nanowire of the nanowire assembly with an insulating film;
Forming an electrode that bridges one end electrically connected to the top of the nanowire diode and the other end contacting the insulating film at the top of at least a part of the nanowire constituting the nanowire aggregate; A method for manufacturing an electronic device, comprising:   The electronic device according to claim 6, wherein a first distance between the one end portion and the other end portion of the electrode is larger than a second distance between the adjacent nanowires in the nanowire assembly. Production method. Forming another nanowire between the one end and the other end of the electrode;
The method of manufacturing an electronic device according to claim 6 or 7, wherein a surface of the other nanowire is covered with the insulating film together with the nanowire of the nanowire aggregate.   The method of manufacturing an electronic device according to any one of claims 6 to 8, wherein the nanowire constituting the nanowire aggregate is higher than the nanowire diode.   The electron according to any one of claims 6 to 9, wherein at least one other nanowire assembly in which a plurality of other nanowires are provided apart from each other is formed around the nanowire diode. Device manufacturing method.

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