JP2018045838A - Light emitting module and vehicular lighting fixture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting module that can be used for a plurality of purposes, and a vehicular lighting fixture.SOLUTION: A light emitting module comprises: a first semiconductor light emitting element 31 which emits light L1 forming a light distribution pattern PL for a low beam; a second semiconductor light emitting element 32 which emits light L2 forming an additional light distribution pattern PA; a substrate 33 which has a first surface 41 where the semiconductor light emitting elements 31 and 32 are mounted and a second surface 42 arranged on the opposite side from the first surface 41; and a wavelength conversion layer 34 which is provided to cover the semiconductor light emitting elements 31 and 32. A light emitting surface 32a is disposed more closely to the second surface 42 than to a light emission surface 31a in a thickness direction of the substrate 33, the wavelength conversion layer 34 has a first emission surface part 51 opposed to the light emission surface 31a and a second emission surface part 52 opposed to the light emission surface 32a, and a step part 53 is so formed that the second emission surface part 52 is disposed more closely to the second surface 42 than to the first emission surface part 51 in the thickness direction of the substrate 33.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a light emitting module and a vehicle lamp.

  Conventionally, for example, there is a vehicular lamp including a light emitting module in which a plurality of semiconductor light emitting elements are covered with a common phosphor layer on one substrate (see Patent Document 1).

International Publication No. 2013/038649

  However, when a direct-light type optical system having a single projection lens is to be configured using the light emitting module of Patent Document 1, for example, adjacent semiconductor light emitting elements are simulated by a common phosphor layer (wavelength conversion layer). It was lit and it was difficult to establish a low beam distribution pattern and a high beam distribution pattern. Thus, the use of the light emitting module configured as in Patent Document 1 is restricted due to the pseudo lighting.

  An object of this invention is to provide the light emitting module and vehicle lamp which can be used for a some use.

In order to achieve the above object, the light emitting module of the present invention comprises:
A first semiconductor light emitting element that emits light forming a first light distribution pattern;
A second semiconductor light emitting element that emits light forming a second light distribution pattern different from the first light distribution pattern;
A substrate having a first surface on which the first semiconductor light emitting device and the second semiconductor light emitting device are mounted, and a second surface disposed on the opposite side of the first surface;
A wavelength conversion layer provided to cover the first semiconductor light emitting element and the second semiconductor light emitting element;
With
In the thickness direction of the substrate, the light emitting surface of the second semiconductor light emitting element is disposed on the second surface side from the light emitting surface of the first semiconductor light emitting element,
The wavelength conversion layer includes a first emission surface portion arranged to face the light emission surface of the first semiconductor light emitting device, and a second emission surface portion arranged to face the light emission surface of the second semiconductor light emitting device. And
A step portion is formed by the first emission surface portion and the second emission surface portion so that the second emission surface portion is disposed on the second surface side of the first emission surface portion in the thickness direction of the substrate. .

  According to the above configuration, most of the light emitted from the first semiconductor light emitting element is emitted from the first emission surface portion, while passing through the inside of the wavelength conversion layer and emitted from the second emission surface portion. Light is reduced. For this reason, it can suppress that pseudo lighting generate | occur | produces resulting from the light of a 1st semiconductor light-emitting element being radiate | emitted from a 2nd output surface part. Therefore, for example, it is possible to selectively turn on and off the first semiconductor light emitting element and the second semiconductor light emitting element to form different light distribution patterns. Thus, according to the said structure, the light emitting module which can be used for a some use can be provided.

In the light emitting module of the present invention,
In the thickness direction of the substrate, the second emission surface portion may be disposed closer to the second surface than the light emitting surface of the first semiconductor light emitting element.

  According to the above configuration, light emitted from the first semiconductor light emitting element, which passes through the inside of the wavelength conversion layer and is emitted from the second emission surface portion, is further reduced and emitted from the first semiconductor light emitting element. Occurrence of a pseudo lighting phenomenon caused by light can be suppressed.

Moreover, the vehicular lamp of the present invention is
A projection lens;
A light emitting module for the vehicle lamp,
With
The first semiconductor light emitting element and the second semiconductor light emitting element are disposed behind the projection lens,
The first light distribution pattern is a low beam light distribution pattern,
The second light distribution pattern is an additional light distribution pattern for a high beam,
It is configured to selectively perform low beam irradiation and high beam irradiation,
The part arrange | positioned between said 1st output surface part and said 2nd output surface part among the edge parts of said 1st output surface part is a cut-off line formation part.

  According to the above configuration, since the pseudo-lighting is prevented from occurring due to the light emitted from the first semiconductor light emitting element being emitted from the second emission surface portion, the first light distribution pattern for low beam is clearly displayed. Cut-off line can be formed.

In the vehicular lamp of the present invention,
A part of the light emitted from the second semiconductor light emitting element may pass through the inside of the wavelength conversion layer and be emitted from the first emission surface portion.

According to the above configuration, part of the light emitted from the second semiconductor light emitting element passes through the inside of the wavelength conversion layer and is emitted from the first emission surface portion. Since this light can be irradiated between the first light distribution pattern and the second light distribution pattern, a dark portion is hardly generated between the first light distribution pattern and the second light distribution pattern.
As described above, according to the above configuration, it is possible to form a clear cut-off line in the first light distribution pattern for the low beam and make it difficult to generate a dark portion between the first light distribution pattern and the second light distribution pattern. it can.

  ADVANTAGE OF THE INVENTION According to this invention, the light emitting module and vehicle lamp which can be used for a some use can be provided.

1 is a longitudinal sectional view of a vehicular lamp according to an embodiment of the present invention. It is a front view of the light emitting module provided in a vehicle lamp. It is a longitudinal cross-sectional view of the light emitting module provided in a vehicle lamp. It is a figure which shows the optical path in a light emitting module, Comprising: (a) is a longitudinal cross-sectional view of the light emitting module at the time of light emission of a 1st semiconductor light-emitting device, (b) is a longitudinal cross-sectional view of the light emitting module at the time of light emission of a 2nd semiconductor light-emitting device. It is. It is a figure which shows in perspective the light distribution pattern formed on the virtual vertical screen arrange | positioned in front of a lamp with the light irradiated from the lamp for vehicles. It is a longitudinal cross-sectional view of the light emitting module which concerns on a reference example. It is a longitudinal cross-sectional view of the vehicle lamp which concerns on a modification.

Hereinafter, an example of this embodiment will be described with reference to the drawings.
As shown in FIG. 1, the vehicular lamp 1 includes a projection lens 2 and a light emitting module 3 as a light source disposed behind the projection lens 2.

  Each of these members is accommodated in a lamp chamber 13 defined by an outer lens 11 and a housing 12. The projection lens 2 is supported by the lens holder 14 at the outer peripheral flange portion 23 thereof. The light emitting module 3 and the lens holder 14 are attached to and supported by the base member 15. The vehicular lamp 1 of this example is a headlamp that can selectively perform low beam irradiation and high beam irradiation, and is configured as a projector-type lamp unit.

  The projection lens 2 is a planoconvex aspherical lens having a front surface 21 having a convex shape and a rear surface 22 having a planar shape, and has an optical axis Ax extending in the front-rear direction of the vehicle. The rear focal point F of the projection lens 2 is located on the optical axis Ax, and the light source image formed on the rear focal plane that is the focal plane including the rear focal point F is an inverted image on the virtual vertical screen in front of the lamp. Projected on. In this example, the virtual vertical screen is disposed, for example, at a position 25 m ahead of the vehicle.

  As shown in FIGS. 2 and 3, the light emitting module 3 includes a first semiconductor light emitting element 31, a second semiconductor light emitting element 32, a substrate 33, and a wavelength conversion layer 34.

  The first semiconductor light emitting element 31 and the second semiconductor light emitting element 32 are light sources that emit light from the light emitting surfaces 31a and 32a, respectively, and are disposed behind the projection lens 2 with the light emitting surfaces 31a and 32a facing the front of the lamp. Has been.

  The first semiconductor light emitting element 31 is a light source that emits light that forms a light distribution pattern for low beams (an example of a first light distribution pattern). The first semiconductor light emitting elements 31 are composed of, for example, white light emitting diodes, and a plurality of first semiconductor light emitting elements 31 are arranged in the left-right direction.

  The second semiconductor light emitting element 32 is a light source that emits light forming an additional light distribution pattern for high beam (an example of the second light distribution pattern) different from the light distribution pattern for low beam. The second semiconductor light emitting elements 32 are composed of, for example, white light emitting diodes, and a plurality of second semiconductor light emitting elements 32 are arranged in the left-right direction.

  In the light emitting module 3, the first semiconductor light emitting element 31 and the second semiconductor light emitting element 32 are configured to be individually lit by a lighting control circuit (not shown). By selectively switching the light emission of the two semiconductor light emitting elements 32, low beam irradiation and high beam irradiation can be selectively performed.

  In this example, the “light distribution pattern for low beam” and the “additional light distribution pattern for high beam” to be described later are, for example, a light distribution formed on a virtual vertical screen disposed at a position 25 m ahead of the vehicle. Means a pattern. And “between the light distribution pattern for low beam and the additional light distribution pattern for high beam” means between the two light distribution patterns formed on the virtual vertical screen.

  The substrate 33 has a first surface 41 on the front side of the lamp and a second surface 42 disposed on the opposite side of the first surface 41. The first semiconductor light emitting element 31 and the second semiconductor light emitting element 32 are mounted on the first surface 41 of the substrate 33.

  In the substrate 33, the mounting surface 41b on the first surface 41 on which the second semiconductor light emitting element 32 is mounted is arranged behind the lamp with respect to the mounting surface 41a on which the first semiconductor light emitting element 31 is mounted on the first surface 41. ing. Thereby, in the thickness direction of the substrate 33, the light emitting surface 32 a of the second semiconductor light emitting element 32 is arranged closer to the second surface 42 than the light emitting surface 31 a of the first semiconductor light emitting element 31.

  The wavelength conversion layer 34 is formed of, for example, transparent resin, transparent glass, or the like, and is provided so as to cover the first semiconductor light emitting element 31 and the second semiconductor light emitting element 32. The wavelength conversion layer 34 is disposed so as to face the light emitting surface 32a of the second light emitting element 32 and the first light emitting surface portion 51 disposed so as to face the light emitting surface 31a of the first semiconductor light emitting element 31. And two exit surface portions 52.

  In the light emitting module 3 configured as described above, a stepped portion 53 is formed in the thickness direction of the substrate 33. The step portion 53 is provided between the first semiconductor light emitting element 31 and the second semiconductor light emitting element 32. And by forming this level | step-difference part 53, the 2nd output surface part 52 is arrange | positioned in the thickness direction of the board | substrate 33 at the 2nd surface 42 side of the board | substrate 33 from the 1st output surface part 51, Furthermore, The first semiconductor light emitting element 31 is disposed on the second surface 42 side of the substrate 33 by a dimension d from the light emitting surface 31a. Further, in the light emitting module 3, a portion of the edge of the first emission surface portion 51 disposed between the first emission surface portion 51 and the second emission surface portion 52 has a cut-off line shape of a low beam light distribution pattern. The cut-off line forming part 55 is formed.

In the vehicular lamp 1 having the above configuration, as shown in FIG. 4A, the light L1 emitted from the light emitting surface 31 a of the first semiconductor light emitting element 31 passes through the wavelength conversion layer 34 and this wavelength conversion layer 34. Is emitted from the first emission surface portion 51, is incident on the rear surface 22 of the projection lens 2, and is emitted from the front surface 21 of the projection lens 2. In the wavelength conversion layer 34, there is a phosphor that absorbs at least a part of light from the light emitting surface 31 a of the first semiconductor light emitting element 31 and emits light having a wavelength different from the light emitted by the first semiconductor light emitting element 31. include.
As shown in FIG. 4B, the light L2 emitted from the light emitting surface 32a of the second semiconductor light emitting element 32 passes through the wavelength converting layer 34 and from the second emitting surface portion 52 of the wavelength converting layer 34. The light is emitted, is incident on the rear surface 22 of the projection lens 2, and is emitted from the front surface 21 of the projection lens 2. A part of the light L2 emitted from the light emitting surface 32a of the second semiconductor light emitting element 32 passes through the inside of the wavelength conversion layer 34, is emitted from the first emission surface portion 51 of the wavelength conversion layer 34, and is a projection lens. 2 enters the rear surface 22 and exits from the front surface 21 of the projection lens 2. In the wavelength conversion layer 34, there is a phosphor that absorbs at least part of the light from the light emitting surface 32a of the second semiconductor light emitting element 32 and emits light having a wavelength different from the light emitted by the second semiconductor light emitting element 32. include.

  FIG. 5 is a perspective view showing a high-beam light distribution pattern PH formed on a virtual vertical screen arranged at a position 25 m ahead of the vehicle by light emitted forward from the vehicular lamp 1. is there. The high-beam light distribution pattern PH is formed as a combined light distribution pattern of the low-beam light distribution pattern PL and the high-beam additional light distribution pattern PA. The light distribution pattern for low beam PL is a light distribution pattern for low beam with left light distribution, and has a cut-off line CL at the upper edge thereof.

  The light distribution pattern PL for the low beam is a projection of the light source image formed on the rear focal plane of the projection lens 2 by the light L1 of the first semiconductor light emitting element 31 onto the virtual vertical screen as a reverse projection image. It is formed by doing. The cut-off line CL is formed by a cut-off line forming part 55 formed of a part disposed between the first emission surface part 51 and the second emission surface part 52 in the edge part of the first emission surface part 51.

  In the high-beam light distribution pattern PH, the additional light distribution pattern PA is additionally formed as a horizontally long light distribution pattern so as to spread upward from the cut-off line CL, so that the traveling road ahead of the vehicle is widely irradiated. Yes. The additional light distribution pattern PA is formed as a combined light distribution pattern of a plurality of light distribution patterns Pa. Each light distribution pattern Pa is a light distribution pattern formed as a reverse projection image of the light source image formed on the rear focal plane of the projection lens 2 by the light L2 of each second semiconductor light emitting element 32.

  Each light distribution pattern Pa has a substantially rectangular shape that is slightly long in the vertical direction. This corresponds to the light emitting surface 32a of the second semiconductor light emitting element 32 having a vertically long rectangular outer shape. Further, each light distribution pattern Pa is formed so as to slightly overlap between the light distribution patterns Pa adjacent to each other. This is because the respective second semiconductor light emitting elements 32 are arranged behind the rear focal plane of the projection lens 2 and pass through the rear focal plane of the projection lens 2 between the second semiconductor light emitting elements 32 adjacent to each other. This is due to a slight overlap in the range of beam bundles.

  Furthermore, each light distribution pattern Pa is formed so that the lower end edge thereof coincides with the cut-off line CL or partially overlaps. This is because the light L2 of the second semiconductor light emitting element 32 emitted from the second emission surface portion 52 of the wavelength conversion layer 34 is slightly downward from the emission surface 21 of the projection lens 2 (to the light distribution pattern PL side for low beam). ) By being emitted as light.

  Here, the light emitting module according to the reference example will be described. FIG. 6 shows a light emitting module according to a reference example. As shown in FIG. 6, in the light emitting module 3A according to the reference example, the first semiconductor light emitting element 31 and the second semiconductor light emitting element 32 are mounted on a flat substrate 33A, and the wavelength conversion layer 34A is covered so as to cover the periphery thereof. Is provided. The wavelength conversion layer 34 </ b> A has one emission surface portion 50, and the lights L <b> 1 and L <b> 2 emitted from the first semiconductor light emitting element 31 and the second semiconductor light emitting element 32 are emitted from the emission surface portion 50.

  In the light emitting module 3A, most of the light L1 emitted from the first semiconductor light emitting element 31 is emitted from the emission surface portion 50 on the front side of the first semiconductor light emitting element 31, but part of the light L1 is Then, the light enters the front side of the second semiconductor light emitting element 32 and the phosphor around the second semiconductor light emitting element 32 emits light. Therefore, in this light emitting module 3A, pseudo-lighting occurs due to the light L1 of the first semiconductor light emitting element 31 being emitted from the front side of the second semiconductor light emitting element 32.

  On the other hand, according to the light emitting module 3 of the present embodiment, the light emitting surface 32a of the second semiconductor light emitting element 32 is closer to the second surface 42 side than the light emitting surface 31a of the first semiconductor light emitting element 31 in the thickness direction of the substrate 33. The first emission surface portion 51 and the second emission surface portion 52 are arranged such that the second emission surface portion 52 is arranged on the second surface 42 side of the first emission surface portion 51 in the thickness direction of the substrate 33. As a result, a stepped portion 54 is formed. Thereby, most of the light L1 emitted from the first semiconductor light emitting element 31 is emitted from the first emission surface portion 51, while passing through the inside of the wavelength conversion layer 34 and from the second emission surface portion 52. The emitted light L1 is reduced.

  For this reason, it is possible to suppress the occurrence of pseudo lighting due to the light L1 of the first semiconductor light emitting element 31 being emitted from the second emission surface portion 52. Therefore, for example, it is possible to selectively turn on and off the first semiconductor light emitting element 31 and the second semiconductor light emitting element 32 to form different light distribution patterns. Thus, according to this embodiment, the light emitting module 3 which can be used for a some application can be provided.

  In particular, in the thickness direction of the substrate 33, the second emission surface portion 52 is disposed closer to the second surface 42 than the light emitting surface 31 a of the first semiconductor light emitting element 31. For this reason, among the light L1 emitted from the first semiconductor light emitting element 31, the light L1 that passes through the inside of the wavelength conversion layer 34 and is emitted from the second emission surface portion 52 is further reduced. It is possible to further suppress the occurrence of the pseudo lighting phenomenon caused by the emitted light L1. Note that the effect of suppressing the occurrence of the pseudo lighting phenomenon is further increased by increasing the dimension d between the second emission surface portion 52 and the light emitting surface 31a of the first semiconductor light emitting element 31.

  And according to the vehicle lamp 1 provided with the said light emitting module 3, the site | part arrange | positioned between the 1st output surface part 51 and the 2nd output surface part 52 among the edges of the 1st output surface part 51 forms a cut-off line. The light distribution pattern for the low beam is the portion 55, and the generation of the pseudo lighting due to the light L1 of the first semiconductor light emitting element 31 being emitted from the second emission surface portion 52 is suppressed. A clear cut-off line CL can be formed in the first light distribution pattern which is PL.

  In addition, a part of the light L <b> 2 emitted from the second semiconductor light emitting element 32 passes through the inside of the wavelength conversion layer 34 and is emitted from the first emission surface portion 51. Since the light L2 can be irradiated between the low beam light distribution pattern PL and the high beam additional light distribution pattern PA, the low beam light distribution pattern PL and the high beam additional light distribution pattern PA. The dark part is less likely to occur between

  As described above, according to this embodiment, it is possible to form a clear cut-off line CL in the low-beam light distribution pattern PL and to prevent a dark part from being generated between the high-beam additional light distribution pattern PA.

  In the above embodiment, the projector type headlamp that irradiates the light from the light emitting module 3 forward through the projection lens 2 has been described as an example. However, the present invention is not limited to the projector type headlamp. It can also be applied to lamps of parabolic type, and can also be applied to uses such as fog lamps, clearance lamps or daytime running lamps (DRL).

  Here, FIG. 7 is a diagram showing a parabolic lamp. As shown in FIG. 7, in this lamp, the light emitting module 3 is disposed with the first light emitting surface portion 51 and the second light emitting surface portion 52 facing upward, and covers the upper part on the rear side of the light emitting module 3. A reflector 60 is arranged. In this lamp, the lights L1 and L2 from the first semiconductor light emitting element 31 and the second semiconductor light emitting element 32 emitted from the first emission surface portion 51 and the second emission surface portion 52 of the light emitting module 3 are reflected by the reflector 60 to be emitted from the lamp. Irradiated forward.

  Also in the case of this lamp, in the thickness direction of the substrate 33, the light emitting surface 32a of the second semiconductor light emitting element 32 is disposed closer to the second surface 42 than the light emitting surface 31a of the first semiconductor light emitting element 31. The light emitting module 3 is provided with a stepped portion 54 so that the surface portion 52 is disposed closer to the second surface 42 than the first emitting surface portion 51. For this reason, most of the light L1 emitted from the first semiconductor light emitting element 31 is emitted from the first emission surface portion 51, while passing through the inside of the wavelength conversion layer 34 and from the second emission surface portion 52. The emitted light L1 is reduced. Therefore, it is possible to suppress the occurrence of pseudo lighting due to the light L1 of the first semiconductor light emitting element 31 being emitted from the second emission surface portion 52. Therefore, for example, it is possible to selectively turn on and off the first semiconductor light emitting element 31 and the second semiconductor light emitting element 32 to form different light distribution patterns.

  In addition, this invention is not limited to embodiment mentioned above, A deformation | transformation, improvement, etc. are possible suitably. In addition, the material, shape, dimension, numerical value, form, number, location, and the like of each component in the above-described embodiment are arbitrary and are not limited as long as the present invention can be achieved.

1: vehicle lamp, 2: projection lens, 3: light emitting module, 31: first semiconductor light emitting element, 31a: light emitting surface, 32: second semiconductor light emitting element, 32a: light emitting surface, 33: substrate, 34: wavelength conversion Layer: 41: First surface, 42: Second surface, 51: First exit surface portion, 52: Second exit surface portion, 53: Stepped portion, 55: Cut-off line forming portion, L1: Light, L2: Light, PA: Additional light distribution pattern (second light distribution pattern), PL: Light distribution pattern for low beam (first light distribution pattern)

Claims (4)

A first semiconductor light emitting element that emits light forming a first light distribution pattern;
A second semiconductor light emitting element that emits light forming a second light distribution pattern different from the first light distribution pattern;
A substrate having a first surface on which the first semiconductor light emitting device and the second semiconductor light emitting device are mounted, and a second surface disposed on the opposite side of the first surface;
A wavelength conversion layer provided to cover the first semiconductor light emitting element and the second semiconductor light emitting element;
With
In the thickness direction of the substrate, the light emitting surface of the second semiconductor light emitting element is disposed on the second surface side from the light emitting surface of the first semiconductor light emitting element,
The wavelength conversion layer includes a first emission surface portion arranged to face the light emission surface of the first semiconductor light emitting device, and a second emission surface portion arranged to face the light emission surface of the second semiconductor light emitting device. And
A step portion is formed by the first emission surface portion and the second emission surface portion so that the second emission surface portion is disposed on the second surface side of the first emission surface portion in the thickness direction of the substrate. ,
Light emitting module for vehicle lighting. In the thickness direction of the substrate, the second emission surface portion is disposed closer to the second surface than the light emitting surface of the first semiconductor light emitting element.
The light emitting module of the vehicular lamp according to claim 1. A projection lens;
A light-emitting module for a vehicle lamp according to claim 1 or 2,
With
The first semiconductor light emitting element and the second semiconductor light emitting element are disposed behind the projection lens,
The first light distribution pattern is a low beam light distribution pattern,
The second light distribution pattern is an additional light distribution pattern for a high beam,
It is configured to selectively perform low beam irradiation and high beam irradiation,
Of the edge portion of the first emission surface portion, the portion disposed between the first emission surface portion and the second emission surface portion is a cut-off line forming portion.
The vehicular lamp according to claim 1 or 2. A part of the light emitted from the second semiconductor light emitting element passes through the inside of the wavelength conversion layer and is emitted from the first emission surface portion.
The vehicular lamp according to claim 3.

Images