JP2018041762A - Substrate processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing device which enables the simplification of the maintenance of an exhaust duct, and enables the increase in operation rate.SOLUTION: A coater-developer 2 comprises: a heat processing unit U2 for performing a heat treatment on a wafer W with a resist film formed thereon; a container main body 30 for collecting a sublimate SU with the aid of a cyclone effect caused by an exhaust gas BE which includes a sublimate, results from the heat treatment, flows thereinto, and forms a rotational flow along a wall face; and a liquid-supply mechanism 40 for supplying the container main body 30 with a cleaning liquid. Since the container main body 30 is supplied with the cleaning liquid, a sublimate SU depositing on a side wall 31 can be washed away by the cleaning liquid. Because of this, the side wall 31 can be kept in a state in which a sublimate SU can readily deposit thereon and therefore, the sublimate SU can be appropriately removed from the exhaust gas BE.SELECTED DRAWING: Figure 4

Description

  The present disclosure relates to a substrate processing apparatus.

  Patent Document 1 discloses an exhaust device that exhausts exhaust generated by heating a substrate coated with a resist (performing baking) to the outside.

JP 2007-103638 A

  Here, depending on the type of resist, a large amount of sublimates may be generated during the baking process, and a large amount of sublimates may be contained in the exhaust. In this case, when the exhaust is cooled in the exhaust duct, sublimates aggregate and accumulate on the inner wall of the exhaust duct, which may reduce the exhaust flow rate of the exhaust duct. Conventionally, the sublimate deposited in the exhaust duct is removed, for example, by periodically removing the exhaust duct (vertical duct and lateral duct) and cleaning with a thinner. However, the removal and installation work of the exhaust duct needs to be performed by a plurality of people and is complicated. Further, since the processing of the substrate processing apparatus needs to be stopped while the exhaust duct is being cleaned, the operation rate of the substrate processing apparatus is reduced.

  The present disclosure has been made in view of the above circumstances, and an object of the present disclosure is to provide a substrate processing apparatus that simplifies maintenance of an exhaust duct and improves an operating rate.

  A substrate processing apparatus according to an aspect of the present disclosure includes a heat treatment unit that heat-treats a substrate on which a coating film is formed, and an exhaust gas that includes sublimates generated by the heat treatment flows, and the exhaust gas flows along a wall surface. The container main body which collects sublimates by the cyclone effect by forming, and the liquid supply mechanism which supplies a washing | cleaning liquid to a container main body are provided.

  In this substrate processing apparatus, exhaust gas containing sublimation flows into a cyclone-structured container body. Inside the container body of the cyclone structure, an ascending swirl flow and a descending swirl flow (swirl flow along the wall surface) are generated, and the sublimate in the exhaust is caught in the swirl flow along the wall surface, and the side wall of the container body is caused by centrifugal force. Adhere to. Thereby, the exhaust gas from which the sublimate (impurities) has been removed can be discharged to the outside of the container body by the upward swirling flow, and the exhaust duct can be prevented from being clogged with the sublimate. Here, if the amount of the sublimate adhering to the side wall of the container main body increases, it becomes difficult for the sublimate to adhere to the side wall. In this case, the sublimate cannot be sufficiently removed from the exhaust gas, and the exhaust gas containing a large amount of sublimate may be discharged to the outside by the upward swirling flow. In this respect, in this substrate processing apparatus, since the cleaning liquid is supplied to the container main body, the sublimate adhering to the side wall can be washed away by the cleaning liquid. As a result, the side wall can be kept in a state in which the sublimate easily adheres, and the sublimate can be appropriately removed from the exhaust. As described above, according to the present substrate processing apparatus, it is possible to simplify the maintenance of the exhaust duct and improve the operating rate.

  The liquid supply mechanism may discharge and supply the cleaning liquid along the swirling flow. Thereby, the sublimate adhering to the side wall by the swirling flow can be more appropriately washed away by the cleaning liquid.

  The liquid supply mechanism may supply the cleaning liquid such that the mist cleaning liquid passes through the exhaust passage. As a result, the sublimate can be captured by the mist-like cleaning liquid in the exhaust passage, and the sublimate can be suitably removed from the exhaust.

  The substrate processing apparatus further includes a controller, the controller causing the heat treatment unit to perform the heat treatment of the substrate, and controlling the liquid supply mechanism so that the flow rate of the cleaning liquid increases with the execution of the heat treatment; May be configured to execute. As a result, the flow rate of the cleaning liquid can be automatically increased after the timing at which exhaust occurs.

  The substrate processing apparatus further includes a controller and a monitoring sensor for monitoring the sublimate removed from the exhaust gas, and the controller is configured to monitor the sublimate removed from the exhaust gas at a predetermined amount or more based on monitoring by the monitoring sensor. It may be configured to execute the determination of whether or not the liquid supply mechanism is controlled so that the flow rate of the cleaning liquid is increased when the sublimation amount is equal to or greater than a predetermined amount. Thereby, the actual amount of sublimate can be determined, and the flow rate of the cleaning liquid can be increased at an appropriate timing.

  The monitoring sensor may be provided on the side wall of the container body. Thereby, the quantity of the sublimate adhering to the side wall can be monitored, and the flow rate of the cleaning liquid can be increased at an appropriate timing.

  The substrate processing apparatus may further include a recovery tank that recovers the sublimate separated from the exhaust, and the liquid supply mechanism may supply a cleaning liquid to the recovery tank. By collecting the sublimate using the recovery tank to which the cleaning liquid is supplied, it is possible to recover the sublimated product whose concentration has been diluted by the cleaning liquid. Etc.) can be suppressed.

  The monitoring sensor may be provided in the monitoring tank. Thereby, the quantity of the sublimates collected can be monitored, and the flow rate of the cleaning liquid can be increased at an appropriate timing.

  The substrate processing apparatus may further include a heating unit that is disposed in an exhaust introduction part that is an exhaust introduction region in the container main body and heats the container main body. The sublimated product tends to aggregate and adhere in a state where the temperature is lowered. For this reason, when the exhaust introduction part is heated by the heating part, the exhaust introduction part can be made a region in which the sublimate hardly adheres. Thereby, it is possible to suppress the sublimate from adhering to the region near the exhaust duct, and to more appropriately suppress the sublimate from being clogged in the exhaust duct. In addition, by providing the said heating part, a sublimate will adhere mainly to the area | region downstream of an exhaust introduction part. When the recovery tank described above is provided on the most downstream side of the exhaust introduction part, the region where the sublimate is attached can be set near the recovery tank, and the recovery efficiency of the sublimate can be improved.

  The substrate processing apparatus further includes a controller and a monitoring sensor for monitoring the sublimate removed from the exhaust gas, and the controller is configured to monitor the sublimate removed from the exhaust gas at a predetermined amount or more based on monitoring by the monitoring sensor. A monitoring sensor configured to determine whether or not there is a sublimate and control the liquid supply mechanism so that the flow rate of the cleaning liquid is increased when the sublimation amount is a predetermined amount or more. May be disposed in a sublimate aggregation part, which is a region downstream of the exhaust introduction part in the container body. Thereby, the amount of sublimate can be appropriately monitored in the sublimate aggregate where the sublimate tends to adhere.

  The substrate processing apparatus may further include a vibrator that applies vibration to the container body. Thereby, the sublimate adhering to the side wall can be shaken off and removed.

  According to the present disclosure, it is possible to provide a substrate processing apparatus that simplifies maintenance of the exhaust duct and improves the operating rate.

It is a perspective view of a substrate processing system. It is sectional drawing which follows the II-II line | wire in FIG. It is sectional drawing which follows the III-III line | wire in FIG. It is a schematic diagram of a sublimate collection unit. It is a schematic diagram which shows arrangement | positioning of a liquid supply mechanism. It is a block diagram which shows the hardware constitutions of a controller. It is a flowchart which shows a bake processing procedure. It is a flowchart which shows a washing | cleaning liquid supply process procedure. It is a flowchart which shows a waste-liquid process procedure. It is a figure for demonstrating a waste liquid process. It is a timing chart which shows the heat processing procedure. It is a figure for demonstrating the maintenance of the exhaust duct at the time of using the substrate processing apparatus which concerns on a comparative example. It is a schematic diagram of the substrate processing apparatus which concerns on a modification. It is a schematic diagram which shows arrangement | positioning of a heating part.

  Hereinafter, embodiments will be described in detail with reference to the drawings. In the description, the same elements or elements having the same functions are denoted by the same reference numerals, and redundant description is omitted.

[Substrate processing system]
The substrate processing system 1 is a system for forming a photosensitive film (coating film), exposing the photosensitive film, and developing the photosensitive film on a substrate. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive film is, for example, a resist film.

  The substrate processing system 1 includes a coating / developing device 2 and an exposure device 3. The exposure apparatus 3 performs an exposure process on the resist film formed on the wafer W. Specifically, the exposure target portion of the resist film is irradiated with energy rays by a method such as immersion exposure. The coating / developing apparatus 2 performs a process of forming a resist film on the surface of the wafer W before the exposure process by the exposure apparatus 3, and performs a development process of the resist film after the exposure process.

(Coating / developing equipment)
Hereinafter, the configuration of the coating / developing apparatus 2 will be described as an example of the substrate processing apparatus. As shown in FIGS. 1 to 3, the coating / developing apparatus 2 includes a carrier block 4, a processing block 5, an interface block 6, and a controller 100.

  The carrier block 4 introduces the wafer W into the coating / developing apparatus 2 and leads the wafer W out of the coating / developing apparatus 2. For example, the carrier block 4 can support a plurality of carriers 11 for the wafer W and incorporates a delivery arm A1. The carrier 11 accommodates a plurality of circular wafers W, for example. The delivery arm A <b> 1 takes out the wafer W from the carrier 11 and delivers it to the processing block 5, receives the wafer W from the processing block 5, and returns it into the carrier 11.

  The processing block 5 has a plurality of processing modules 14, 15, 16, and 17. As shown in FIGS. 2 and 3, the processing modules 14, 15, 16, and 17 include a plurality of liquid processing units U1, a plurality of heat treatment units U2, and a transfer arm A3 that transfers the wafer W to these units. Built-in. The processing module 17 further includes a direct transfer arm A6 that transfers the wafer W without passing through the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 applies the processing liquid to the surface of the wafer W. The heat treatment unit U2 includes, for example, a hot plate and a cooling plate, heats the wafer W with the hot plate, and cools the heated wafer W with the cooling plate to perform the heat treatment.

  The processing module 14 forms a lower layer film on the surface of the wafer W by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 14 applies a processing liquid for forming a lower layer film on the wafer W. The heat treatment unit U2 of the processing module 14 performs various heat treatments associated with the formation of the lower layer film.

  The processing module 15 forms a resist film on the lower layer film by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 15 applies a processing liquid for forming a resist film on the lower layer film. The heat treatment unit U2 of the processing module 15 performs various heat treatments accompanying the formation of the resist film.

  The processing module 16 forms an upper layer film on the resist film by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 16 applies a processing liquid for forming an upper layer film on the resist film. The heat treatment unit U2 of the processing module 16 performs various heat treatments accompanying the formation of the upper layer film.

  The processing module 17 performs development processing of the resist film after exposure by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 17 applies a developing solution on the exposed surface of the wafer W, and then rinses it with a rinsing solution, thereby developing the resist film. The heat treatment unit U2 of the processing module 17 performs various heat treatments associated with the development processing. Specific examples of the heat treatment include heat treatment before development processing (PEB: Post Exposure Bake), heat treatment after development processing (PB: Post Bake), and the like.

  A shelf unit U10 is provided on the carrier block 4 side in the processing block 5. The shelf unit U10 is partitioned into a plurality of cells arranged in the vertical direction. An elevating arm A7 is provided in the vicinity of the shelf unit U10. The raising / lowering arm A7 raises / lowers the wafer W between the cells of the shelf unit U10. A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is partitioned into a plurality of cells arranged in the vertical direction.

  The interface block 6 delivers the wafer W to and from the exposure apparatus 3. For example, the interface block 6 includes a delivery arm A8 and is connected to the exposure apparatus 3. The delivery arm A8 delivers the wafer W arranged on the shelf unit U11 to the exposure apparatus 3, receives the wafer W from the exposure apparatus 3, and returns it to the shelf unit U11.

  The controller 100 controls the coating / developing apparatus 2 to execute the coating / developing process in the following procedure, for example.

  First, the controller 100 controls the transfer arm A1 so as to transfer the wafer W in the carrier 11 to the shelf unit U10, and controls the lifting arm A7 so that the wafer W is arranged in the cell for the processing module 14.

  Next, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to the liquid processing unit U1 and the heat treatment unit U2 in the processing module 14, and forms a lower layer film on the surface of the wafer W. Thus, the liquid processing unit U1 and the heat treatment unit U2 are controlled. Thereafter, the controller 100 controls the transfer arm A3 so as to return the wafer W on which the lower layer film is formed to the shelf unit U10, and controls the lifting arm A7 so as to place the wafer W in the cell for the processing module 15.

  Next, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to the liquid processing unit U1 and the heat treatment unit U2 in the processing module 15, and forms a resist film on the lower layer film of the wafer W. Thus, the liquid processing unit U1 and the heat treatment unit U2 are controlled. Thereafter, the controller 100 controls the transfer arm A3 so as to return the wafer W to the shelf unit U10, and controls the lift arm A7 so as to place the wafer W in the cell for the processing module 16.

  Next, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to each unit in the processing module 16, and the liquid processing unit so as to form an upper layer film on the resist film of the wafer W. U1 and heat treatment unit U2 are controlled. Thereafter, the controller 100 controls the transfer arm A3 so as to return the wafer W to the shelf unit U10, and controls the lifting arm A7 so as to place the wafer W in the cell for the processing module 17.

  Next, the controller 100 directly controls the transfer arm A6 so as to transfer the wafer W of the shelf unit U10 to the shelf unit U11, and controls the transfer arm A8 so as to send this wafer W to the exposure apparatus 3. Thereafter, the controller 100 controls the transfer arm A8 so that the wafer W subjected to the exposure process is received from the exposure apparatus 3 and returned to the shelf unit U11.

  Next, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U11 to each unit in the processing module 17, and the liquid processing unit U1 and the processing unit U1 and the resist film of the wafer W are subjected to development processing. The heat treatment unit U2 is controlled. Thereafter, the controller 100 controls the transfer arm A3 to return the wafer W to the shelf unit U10, and controls the lift arm A7 and the delivery arm A1 to return the wafer W into the carrier 11. Thus, the coating / developing process is completed.

(Sublimation collection unit)
Next, the sublimate collection unit 20 (see FIG. 4) related to the heat treatment unit U2 of the processing module 15 will be described. As shown in FIG. 4, the sublimate recovery unit 20 includes a container body 30, a liquid supply mechanism 40, a recovery tank 50, and a monitoring sensor 60. When the wafer W on which the resist film is formed is heated (baking is performed) by the hot plate HP of the heat treatment unit U2 (heat treatment part), exhaust BE containing a large amount of sublimation SU is generated. The sublimate collection unit 20 is configured to discharge the exhaust AE from which the sublimate SU has been removed to the exhaust duct 90 by collecting the sublimation SU from the exhaust BE.

  The container body 30 has a configuration in which the exhaust BE including the sublimate SU generated from the wafer W flows. In the container main body 30, the sublimated matter SU is collected by the cyclone effect as the exhaust BE forms a swirling flow along the wall surface. The container body 30 has a structure in which the inner diameter of the side wall in the region downstream of the exhaust introduction unit (the region on the bottom side) is smaller than the inner diameter of the side wall in the exhaust introduction unit, which is an exhaust introduction region. It is formed in a cyclone structure. An exhaust pipe 81 through which exhaust BE from the wafer W flows communicates with the upper side surface of the container body 30. An exhaust pipe 82 through which the exhaust AE from which the sublimate SU has been removed flows is in communication with the upper portion of the container body 30. The exhaust pipe 82 communicates with the exhaust duct 90. The exhaust duct 90 includes a horizontal duct 91 that communicates with the exhaust pipe 82 and extends in the horizontal direction, and a vertical duct 92 that communicates with the lateral duct 91 and extends in the vertical direction.

  In the container body 30 having a cyclone structure, an upward swirling flow and a downward swirling flow are generated. The sublimation SU contained in the exhaust BE is caught in the descending swirl flow and adheres to the side wall 31 of the container body 30 by centrifugal force. Then, the exhaust AE from which the sublimate SU has been removed is discharged to the outside of the container body 30 by the upward swirling flow, and is discharged to the exhaust duct 90 via the exhaust pipe 82. In addition, the exhaust pipe 81 may be arranged in a direction in which the exhaust port on the container body 30 side easily generates a downward swirling flow. The exhaust AE may include a small amount of sublimate SU that does not cause a problem of deposition of the sublimate SU in the exhaust duct 90.

  The liquid supply mechanism 40 is configured to supply the cleaning liquid to the container body 30. The cleaning liquid only needs to be able to wash away the sublimation SU attached to the side wall 31 of the container main body 30, and is, for example, thinner. The liquid supply mechanism 40 includes a liquid source 41, pipes 42, 42a, 42b, valves 43a, 43b, and nozzles 44a, 44b. 5A and 5B, the supply port on the container body 30 side of the nozzle 44a is along the wall surface of the container body 30, similarly to the exhaust port of the exhaust pipe 81, in other words. It arrange | positions in the direction along the turning flow of exhaust_gas | exhaustion AE. Thereby, the liquid supply mechanism 40 discharges and supplies the cleaning liquid along the swirling flow of the exhaust BE. FIG. 5B is a plan view of the container body 30.

  The liquid source 41 is a tank that stores a cleaning liquid. The cleaning liquid stored in the liquid source 41 may be pumped to the pipe 42 side by a pressurizing source (not shown) for sending an inert gas (for example, nitrogen gas) for pressurization, or a pump ( (Not shown) may be pumped to the pipe 42 side.

  The pipe 42 is a cleaning liquid flow path extending from the liquid source 41. The pipe 42 is branched into a pipe 42a and a pipe 42b at the branch point. The pipe 42 a is a pipe that extends from the branch point toward the upper side surface of the container body 30. The pipe 42b is a pipe extending from the branch location toward the collection tank 50.

  The valve 43a is provided in the pipe 42a. The valve 43a is an air operation valve, for example, and opens and closes a flow path in the pipe 42a. By opening the valve 43a, the cleaning liquid of the liquid source 41 is pumped to the container body 30 side. Opening and closing of the valve 43a is controlled by the controller 100 (details will be described later).

  The valve 43b is provided in the pipe 42b. The valve 43b is an air operation valve, for example, and opens and closes a flow path in the pipe 42b. By opening the valve 43b, the cleaning liquid of the liquid source 41 is pumped to the collection tank 50 side. The opening and closing of the valve 43b is controlled by the controller 100 (details will be described later).

  The nozzle 44 a is attached to the tip of the pipe 42 a (the end on the container body 30 side), and is provided on the upper side surface of the container body 30. The nozzle 44 a is provided below the portion of the upper side surface of the container body 30 where the exhaust pipe 81 communicates. The nozzle 44 a discharges the cleaning liquid so as to wet the side wall 31 of the container body 30. More specifically, the nozzle 44a discharges the cleaning liquid so that the cleaning liquid flows spirally through the side wall 31 of the container body 30. As described above, the liquid supply mechanism 40 supplies the cleaning liquid so that the cleaning liquid spirally flows on the side wall 31 of the container body 30.

  The nozzle 44b is attached to the tip of the pipe 42b (the end on the collection tank 50 side) and is provided above the collection tank 50. The nozzle 44 b discharges the cleaning liquid into the recovery tank 50 from above the recovery tank 50. As described above, the liquid supply mechanism 40 supplies the cleaning liquid to the recovery tank 50.

  The collection tank 50 is disposed below the container body 30 and collects the sublimation SU separated from the exhaust BE. More specifically, the recovery tank 50 recovers the sublimate SU that has been washed away from the side wall 31 by the cleaning liquid and has fallen downward due to gravity. As described above, the cleaning liquid is directly supplied to the recovery tank 50 from the nozzle 44b. In the recovery tank 50, the cleaning liquid discharged from the nozzle 44a to the container body 30 is recovered. A liquid level sensor 72 is attached to the recovery tank 50. The liquid level sensor 72 measures the liquid level in the recovery tank 50 and outputs the measurement result to the controller 100. The recovery tank 50 is connected to a pump 71 for discharging the cleaning liquid in the recovery tank 50. The liquid level in the recovery tank 50 is adjusted by a pump 71 controlled by the controller 100 (details will be described later).

  The monitoring sensor 60 is a sensor that monitors the sublimation SU removed from the exhaust BE. The monitoring sensor 60 outputs the monitoring result to the controller 100. The monitoring sensor 60 is provided, for example, on the side wall 31 of the container main body 30 and monitors the sublimation SU removed from the exhaust BE by, for example, specifying the degree of dirt on the side wall 31 (the degree of sticking of the sublimation SU). To do. The monitoring sensor 60 is located below the portion of the side wall 31 of the container body 30 where the sublimate SU is likely to stick, that is, below the portion where the exhaust pipe 81 is communicated and where the nozzle 44a is provided, and due to the temperature drop of the exhaust BE. It is provided at a place where the sublimation SU is easily deposited. The monitoring sensor 60 is, for example, an optical sensor or an ultrasonic sensor. The optical sensor specifies the degree of dirt on the side wall 31 by specifying the transparency of the side wall 31, for example. The ultrasonic sensor specifies the degree of contamination of the side wall 31 by specifying the thickness of the side wall 31, for example.

  The monitoring sensor 60 is provided, for example, in the recovery tank 50, and is removed from the exhaust BE by specifying, for example, the degree of contamination of the waste liquid containing the cleaning liquid and the sublimate SU (the degree of inclusion of the sublimate SU). The sublimation SU may be monitored. In this case, the monitoring sensor 60 is, for example, a color detection sensor that monitors the sublimation SU removed from the exhaust BE based on a change in the color of the waste liquid, a particle count, or the like. The monitoring sensor 60 may be provided on either the side wall 31 of the container body 30 or the collection tank 50, or may be provided on both.

(controller)
The sublimate collection unit 20 and the heat treatment unit U2 of the processing module 15 are controlled by the controller 100 described above. Hereinafter, the configuration of the controller 100 for controlling the sublimate collection unit 20 and the heat treatment unit U2 of the processing module 15 will be described.

  The controller 100 causes the heat treatment unit U2 of the processing module 15 to perform the baking process of the wafer W, and controls the liquid supply mechanism 40 so that the flow rate of the cleaning liquid increases with the execution of the baking process. Is configured to run.

  The controller 100 determines whether or not the sublimation product SU that has been separated by monitoring by the monitoring sensor 60 is a predetermined amount or more, and if the sublimation product SU is a predetermined amount or more, the controller 100 The liquid supply mechanism 40 may be controlled so as to increase the flow rate.

  As illustrated in FIG. 4, the controller 100 includes a baking process control unit 101, a liquid supply control unit 102, a dirt determination unit 103, a liquid level as functional modules (hereinafter referred to as “functional modules”). The determination unit 104 and the discharge control unit 105 are included.

  The bake process control unit 101 controls the heat treatment unit U2 of the process module 15 so as to execute the bake process of the wafer W. Specifically, the bake processing control unit 101 controls the heat treatment unit U2 of the processing module 15 so as to execute the heating of the wafer W and the cooling after the heating.

  The liquid supply control unit 102 increases the flow rate of the cleaning liquid discharged toward the side wall 31 of the container body 30 with the start of the baking process (for example, the discharge of the cleaning liquid is started). ), The valve 43a of the liquid supply mechanism 40 is opened. In addition, the liquid supply control unit 102 decreases the flow rate of the cleaning liquid discharged toward the side wall 31 of the container body 30 with the completion of the baking process (for example, the discharge of the cleaning liquid is stopped). ), The valve 43a of the liquid supply mechanism 40 is closed.

  In response to the liquid supply instruction from the dirt determination unit 103, the liquid supply control unit 102 increases the flow rate of the cleaning liquid discharged toward the side wall 31 of the container body 30 (for example, discharge of the cleaning liquid is started). The valve 43a of the liquid supply mechanism 40 is opened. Further, the liquid supply control unit 102 responds to the liquid supply stop instruction from the dirt determination unit 103 so that the flow rate of the cleaning liquid discharged toward the side wall 31 of the container body 30 is reduced (for example, the discharge of the cleaning liquid is performed). The valve 43a of the liquid supply mechanism 40 is closed.

  The liquid supply control unit 102 increases the flow rate of the cleaning liquid discharged from the upper side of the recovery tank 50 toward the recovery tank 50 (for example, the discharge of the cleaning liquid is performed, for example, with the start of the baking process). The valve 43b of the liquid supply mechanism 40 is opened. The timing at which the valve 43b is opened by the liquid supply control unit 102 is not limited to this.

  The dirt determination unit 103 determines whether or not the sublimation SU that has been separated by monitoring by the monitoring sensor 60 is greater than or equal to a predetermined amount. The dirt determination unit 103 outputs a liquid supply instruction to the liquid supply control unit 102 when the sublimation product SU is greater than or equal to a predetermined amount. The dirt determination unit 103 outputs a liquid supply stop instruction to the liquid supply control unit 102 when the sublimation product SU is not equal to or larger than the predetermined amount.

  The liquid level determination unit 104 determines whether or not the liquid level measured by the liquid level sensor 72 is equal to or greater than a predetermined first threshold value. The liquid level determination unit 104 outputs a discharge instruction to the discharge control unit 105 when the liquid level is equal to or higher than the first threshold value. Further, the liquid level determination unit 104 determines whether or not the liquid level measured by the liquid level sensor 72 is equal to or lower than a predetermined second threshold value that is lower than the first threshold value described above after outputting the discharge instruction. To do. The liquid level determination unit 104 outputs a discharge stop instruction to the discharge control unit 105 when the liquid level is equal to or lower than the second threshold value.

  The discharge control unit 105 controls the pump 71 so that the waste liquid in the collection tank 50 is discharged in response to a discharge instruction from the liquid level determination unit 104. Further, the discharge control unit 105 controls the pump 71 so that the discharge of the waste liquid in the recovery tank 50 is stopped in response to the discharge stop instruction from the liquid level determination unit 104.

  The controller 100 includes one or a plurality of control computers. For example, the controller 100 includes a circuit 120 illustrated in FIG. The circuit 120 includes one or more processors 121, a memory 122, a storage 123, an input / output port 124, and a timer 125.

  The input / output port 124 inputs and outputs electrical signals to and from the heat treatment unit U2, the valves 43a and 43b, the monitoring sensor 60, the pump 71, the liquid level sensor 72, and the like of the processing module 15. The timer 125 measures the elapsed time by, for example, counting a reference pulse with a fixed period. The storage 123 includes a computer-readable recording medium such as a hard disk. The recording medium records a program for executing a substrate processing procedure described later. The recording medium may be a removable medium such as a nonvolatile semiconductor memory, a magnetic disk, and an optical disk. The memory 122 temporarily records the program loaded from the recording medium of the storage 123 and the calculation result by the processor 121. The processor 121 configures each functional module described above by executing the program in cooperation with the memory 122.

  Note that the hardware configuration of the controller 100 is not necessarily limited to the configuration of each functional module by a program. For example, each functional module of the controller 100 may be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) in which the logic modules are integrated.

[Substrate processing procedure]
Next, as an example of the substrate processing method, a bake processing procedure, a cleaning liquid supply processing procedure, and a waste liquid processing procedure executed by the sublimate collection unit 20 and the heat treatment unit U2 of the processing module 15 according to the control of the controller 100 will be described. To do. In the bake process, the bake process control unit 101 controls the heat treatment unit U2 of the process module 15 to cause the wafer W to be baked. In the cleaning liquid supply process, the liquid supply control unit 102 controls the liquid supply mechanism 40 so that the cleaning liquid is discharged toward the side wall 31 of the container body 30 when the execution of the baking process is started. Specifically, the liquid supply control unit 102 opens the valve 43 a of the liquid supply mechanism 40. Thereby, the cleaning liquid of the liquid source 41 is discharged from the upper side surface of the container main body 30 into the container main body 30 via the pipes 42 and 42a and the nozzle 44a, and flows spirally on the side wall 31 of the container main body 30.

(Bake process)
Hereinafter, the baking process procedure will be described in detail. As shown in FIG. 7, the controller 100 first executes step S11. In step S11, the baking processing control unit 101 controls the heat treatment unit U2 of the processing module 15 so that the heating of the wafer W is started. The wafer W is heated by a hot plate HP incorporated in the heat treatment unit U2.

  Subsequently, the controller 100 executes Step S12. In step S12, the baking process control unit 101 determines whether or not a predetermined time has elapsed since the start of the process in step S11.

  Until it is determined in step S12 that the predetermined time has elapsed, the process of step S12 is repeatedly performed. On the other hand, if it is determined in step S12 that the predetermined time has elapsed, the controller 100 executes step S13. In step S13, the bake processing control unit 101 controls the heat treatment unit U2 of the processing module 15 so that the cooling of the wafer W is started. The wafer W is cooled by a cooling plate built in the heat treatment unit U2.

(Cleaning liquid supply processing procedure)
Hereinafter, the cleaning liquid supply processing procedure will be described in detail. As shown in FIG. 8, the controller 100 first executes step S21. In step S21, the bake process control unit 101 determines whether or not the bake process is being performed, and the stain determination unit 103 determines whether or not the sublimate SU is greater than or equal to a predetermined amount (has a stain). judge.

  The process of step S21 is repeatedly performed until it is determined in step S21 that the baking process is being performed or that there is dirt. On the other hand, if it is determined in step S21 that the baking process is being performed or that there is dirt, the controller 100 executes step S22. In step S22, the liquid supply control unit 102 opens the valve 43a of the liquid supply mechanism 40. That is, in step S22, the discharge of the cleaning liquid onto the side wall 31 of the container body 30 is started.

  Subsequently, the controller 100 executes Step S23. In step S23, the bake process control unit 101 determines whether or not the bake process has been completed, and the stain determination unit 103 determines whether or not the sublimate SU is not equal to or greater than a predetermined amount (no stain). .

  Until the bake process is completed in step S23 and it is determined that there is no dirt, the process of step S23 is repeated. On the other hand, if it is determined in step S23 that the baking process has been completed and there is no contamination, the controller 100 executes step S24. In step S24, the liquid supply control unit 102 closes the valve 43a of the liquid supply mechanism 40. That is, in step S24, the discharge of the cleaning liquid to the side wall 31 of the container body 30 is stopped.

(Waste liquid treatment procedure)
As described above, the waste liquid containing the cleaning liquid and the sublimate SU accumulated in the recovery tank 50 is discharged out of the recovery tank 50 when a predetermined condition is satisfied. Hereinafter, the waste liquid treatment procedure will be described in detail.

  As shown in FIG. 10, the recovery tank 50 is provided with liquid level sensors 73, 74, and 75 as the liquid level sensor 72. The liquid level sensor 74 is a sensor that detects that the liquid level has reached a predetermined first threshold (height: H). The liquid level sensor 73 is a sensor that detects that the liquid level has reached a second threshold value (height: L) that is lower than the first threshold value. The liquid level sensor 75 is a sensor that detects that the liquid level has reached a third threshold value (height: HH) that is higher than the first threshold value.

  As shown in FIG. 9, in the waste liquid treatment, the controller 100 first executes step S31. In step S31, the liquid level determination unit 104 determines whether or not the liquid level measured by the liquid level sensor 72 is equal to or higher than the height H that is the first threshold value. For example, when the liquid level of the waste liquid in the recovery tank 50 is in the state shown in FIG. 10A, the liquid level sensor 74 does not detect that the liquid level is higher than the height H. 104 determines that the liquid level is not higher than the height H. In this case, the process of step S31 is repeated until it is determined that the liquid level is higher than the height H.

  On the other hand, when the liquid level of the waste liquid is in the state shown in FIG. 10B, since the liquid level sensor 74 detects that the liquid level is higher than the height H, the liquid level determination unit 104 Then, it is determined that the liquid level is higher than the height H, and a discharge instruction is output to the discharge control unit 105. In this case, the controller 100 executes step S32. In step S <b> 32, the discharge control unit 105 controls the pump 71 so that the waste liquid in the collection tank 50 is discharged to the outside of the collection tank 50 in response to a discharge instruction from the liquid level determination unit 104.

  Subsequently, the controller 100 executes Step S33. In step S33, the liquid level determination unit 104 determines whether or not the liquid level measured by the liquid level sensor 72 is equal to or lower than a height L that is a second threshold value that is lower than the first threshold value.

  Until it is determined in step S33 that the liquid level is equal to or lower than the height L, the process of step S33 is repeated. On the other hand, when the liquid level of the waste liquid is in the state shown in FIG. 10C, since the liquid level sensor 73 detects that the liquid level is equal to or lower than the height L, the liquid level determination unit 104 Then, it is determined that the liquid level is lower than the height L, and a discharge stop instruction is output to the discharge control unit 105. In this case, the controller 100 executes Step S34. In step S <b> 34, the discharge control unit 105 controls the pump 71 so that the discharge of the waste liquid in the recovery tank 50 is stopped in response to the discharge stop instruction from the liquid level determination unit 104.

(Execution timing of each process)
Next, an example of the execution timing of the above-described baking process, cleaning liquid supply process, and waste liquid process will be described with reference to FIG.

  As shown in FIG. 11, at time t <b> 1, the baking process control unit 101 starts the baking process for the wafer W, and at the same time, the liquid supply control unit 102 opens the valve 43 a of the liquid supply mechanism 40, and the liquid supply mechanism 40. The supply of the cleaning liquid to the container body 30 is started. Note that the start of the baking process and the start of the supply of the cleaning liquid do not necessarily coincide with each other, and any of the processes may be performed in advance.

  The amount of waste liquid in the collection tank 50 increases due to the start of supply of the cleaning liquid, and at time t2, the liquid level sensor 74 detects that the liquid level has reached a predetermined first threshold value (height: H). In this case, the liquid level determination unit 104 determines that the liquid level is higher than the height H, and the discharge control unit 105 controls (ON) the pump 71 so that the waste liquid in the recovery tank 50 is discharged to the outside. .

  When the baking process started at time t1 ends at time t3, after a predetermined time has elapsed from time t3, the liquid supply control unit 102 closes the valve 43a of the liquid supply mechanism 40 and supplies the cleaning liquid to the container body 30. Is stopped.

  Further, since the discharge of the waste liquid from the collection tank 50 is started at time t2, the liquid level sensor 73 detects that the liquid level is equal to or lower than a predetermined second threshold value (height: L) at time t4. . In this case, after a predetermined time has elapsed from time t4, the pump 71 is controlled (OFF) by the discharge control unit 105 so that the discharge of the waste liquid in the collection tank 50 is stopped.

  At time t5, the dirt determination unit 103 determines that the sublimation SU detected by the monitoring sensor 60 is greater than or equal to a predetermined amount (with dirt), and the liquid supply control unit 102 applies the liquid supply mechanism 40 to the container body 30. Supply of the cleaning liquid is started. At time t <b> 6, when the dirt determination unit 103 determines that the sublimation SU detected by the monitoring sensor 60 is not equal to or greater than the predetermined amount (no dirt), the liquid supply control unit 102 performs the container body after a predetermined time has elapsed. The supply of the cleaning liquid to 30 is stopped.

  At time t <b> 7, the baking process control unit 101 starts baking the wafer W, and the liquid supply control unit 102 starts supplying the cleaning liquid to the container body 30 by the liquid supply mechanism 40. At time t8 before time t9 when the baking process ends, when the dirt determination unit 103 determines that the sublimation SU detected by the monitoring sensor 60 is greater than or equal to the predetermined amount (has dirt), the baking process ends. The time t9 does not trigger the supply of the cleaning liquid, and after that, a predetermined time has elapsed since the time t10 when the dirt determination unit 103 determined that the sublimation SU detected by the monitoring sensor 60 was not more than a predetermined amount (no dirt). Thereafter, the supply of the cleaning liquid to the container body 30 is stopped by the liquid supply control unit 102. As described above, when it is determined that there is dirt at the timing when the baking process is finished, the supply of the cleaning liquid is not stopped, and the supply of the cleaning liquid is stopped after the absence of the dirt thereafter.

  At time t11, when the dirt determination unit 103 determines that the sublimation SU detected by the monitoring sensor 60 is greater than or equal to a predetermined amount (with dirt), the liquid supply control unit 102 causes the container main body 30 to be used by the liquid supply mechanism 40. Supply of the cleaning liquid to is started. At time t12 before time t13 when it is determined that there is no contamination, when the baking process of the wafer W is started by the bake processing control unit 101, time t13 when it is determined that there is no contamination is an opportunity to stop supplying the cleaning liquid. After that, after a predetermined time has elapsed from time t14 when the baking process is finished, the supply of the cleaning liquid to the container body 30 is stopped by the liquid supply control unit 102. As described above, when the baking process is continued at the timing when it is determined that there is no contamination, the supply of the cleaning liquid is not stopped, and the supply of the cleaning liquid is stopped after the baking process is finished thereafter.

  The amount of waste liquid in the recovery tank 50 increases due to the start of the supply of the cleaning liquid accompanying the baking process. At time t15, the liquid level is detected by the liquid level sensor 74 at a predetermined first threshold (height: H). Suppose that it has been reached. In this case, the liquid level determination unit 104 determines that the liquid level is higher than the height H, and the discharge control unit 105 controls (ON) the pump 71 so that the waste liquid in the recovery tank 50 is discharged to the outside. . Thereafter, at time t16, the discharge of the waste liquid from the collection tank 50 is started, so that the liquid level sensor 73 detects that the liquid level is equal to or lower than a predetermined second threshold (height: L). In this case, the liquid level sensor 74 that detects the arrival of the first threshold value higher than the second threshold value (height: L) normally indicates that the liquid level is not more than the first threshold value (height: H). Must be detected. However, if the liquid level sensor 74 detects that the liquid level is higher than the first threshold (height: H) due to some abnormality, a logic mismatch of the liquid level sensor occurs at time t16. The liquid supply control unit 102 stops the supply of the cleaning liquid.

  Further, it is assumed that the liquid level sensor 74 detects that the liquid level has reached a predetermined first threshold (height: H) at time t17. In this case, the liquid level determination unit 104 determines that the liquid level is higher than the height H, and the discharge control unit 105 controls (ON) the pump 71 so that the waste liquid in the recovery tank 50 is discharged to the outside. . After that, if the liquid level does not fall below the second threshold value (height: L) even though the waste liquid has been discharged to the outside, some abnormality has occurred. Therefore, at a time t18 when a predetermined time has elapsed from the time t17, it is determined that a time-out has occurred, and the supply of the cleaning liquid is stopped by the liquid supply control unit 102.

  In addition, the amount of waste liquid in the recovery tank 50 increases due to the start of the supply of the cleaning liquid accompanying the baking process. At time t19, the liquid level is detected by the liquid level sensor 74 at a predetermined first threshold (height: H). Suppose that it has been reached. In this case, the liquid level determination unit 104 determines that the liquid level is higher than the height H, and the discharge control unit 105 controls (ON) the pump 71 so that the waste liquid in the recovery tank 50 is discharged to the outside. . Thereafter, when the cleaning liquid reaches the third threshold (height: HH) as shown in FIG. 10D, the liquid level reaches the third threshold (height: HH) by the liquid level sensor 75 at time t20. Is detected. In this case, since it is considered that some abnormality such as a defect in the liquid level sensor has occurred, the supply of the cleaning liquid is stopped by the liquid supply control unit 102.

[Effects of this embodiment]
As described above, in the coating / developing apparatus 2, the heat treatment unit U2 for heat-treating the wafer W on which the resist film is formed, and the exhaust BE including the sublimate SU generated by the heat treatment flow in, and the exhaust BE Includes a container body 30 that collects the sublimate SU by the cyclone effect by forming a swirl flow along the wall surface, and a liquid supply mechanism 40 that supplies the cleaning liquid to the container body 30.

  In the coating / developing apparatus 2, the exhaust BE containing the sublimation SU flows into the container body 30 having a cyclone structure. Inside the container body 30 having a cyclone structure, an upward swirl flow and a downward swirl flow (swirl flow along the wall surface) are generated, and the sublimate SU in the exhaust BE is caught in the swirl flow along the wall surface, and the centrifugal force causes the container to It adheres to the side wall 31 of the main body 30. Thereby, the exhaust AE from which the sublimate SU (impurities) has been removed can be discharged to the outside of the container body 30 by the upward swirling flow, and the exhaust duct 90 can be prevented from being clogged with the sublimate. Here, if the amount of the sublimate adhering to the side wall of the container main body increases, it becomes difficult for the sublimate to adhere to the side wall. In this case, the sublimate cannot be sufficiently removed from the exhaust gas, and the exhaust gas containing a large amount of sublimate may be discharged to the outside by the upward swirling flow. In this regard, in the coating / developing apparatus 2, since the cleaning liquid is supplied to the container body 30, the sublimation SU attached to the side wall 31 can be washed away by the cleaning liquid. As a result, the side wall 31 can be kept in a state in which the sublimate SU is easily attached, and the sublimate SU can be appropriately removed from the exhaust BE. In addition, since the side wall 31 of the container main body 30 can be appropriately cooled by supplying the cleaning liquid, the sublimated product SU is likely to aggregate, and the adhesion of the sublimated product SU to the side wall 31 can be promoted. .

  FIG. 12 is a view for explaining maintenance of the exhaust duct 90 when the substrate processing apparatus according to the comparative example is used. Unlike the coating / developing apparatus 2 of this embodiment, the substrate processing apparatus according to the comparative example does not include the container body 30 and the liquid supply mechanism 40 having a cyclone structure. That is, in the substrate processing apparatus according to the comparative example, the exhaust BE including the sublimation SU generated by the heat treatment of the wafer W flows into the exhaust duct 90 as it is. In this case, when the exhaust gas is cooled in the exhaust duct 90, the sublimate SU may aggregate and accumulate on the inner wall of the exhaust duct 90. For this reason, when the substrate processing apparatus according to the comparative example is used, the exhaust duct 90 (the horizontal duct 91 and the vertical duct 92) is periodically removed as shown in FIG. The sublimation SU in the exhaust duct 90 is removed by immersing the duct 90 or the like. However, since the exhaust duct 90 is long and has a length of 2000 mm or more and is difficult to handle, such work needs to be performed by a plurality of people and is complicated. Moreover, since it is necessary to stop the processing of the substrate processing apparatus while the exhaust duct 90 is being cleaned in the pool, the operation rate of the substrate processing apparatus is also problematic.

  On the other hand, the coating / developing apparatus 2 of the present embodiment keeps the side wall 31 in a state where the sublimation SU is easily attached by washing the side wall 31 with the cleaning liquid, and appropriately removes the sublimation SU from the exhaust BE. This prevents the exhaust duct 90 from being clogged with sublimates. For this reason, in the coating / developing apparatus 2, the frequency of removing and cleaning the exhaust duct 90 is reduced as compared with the comparative example described above, and the maintenance of the exhaust duct 90 is simplified and the operating rate is improved.

  The liquid supply mechanism 40 discharges and supplies the cleaning liquid along the swirl flow. Thereby, the sublimate SU adhering to the side wall 31 by the swirling flow can be more appropriately washed away by the cleaning liquid.

  The coating / developing apparatus 2 further includes a controller 100. The controller 100 causes the heat treatment unit U2 to perform the heat treatment of the wafer W, and the liquid supply mechanism so that the flow rate of the cleaning liquid increases as the heat treatment is performed. 40 is configured to execute. Accordingly, the flow rate of the cleaning liquid can be automatically increased after the timing at which exhaust is generated by the heat treatment.

  The coating / developing apparatus 2 further includes a monitoring sensor 60 that monitors the sublimated matter SU removed from the exhaust BE, and the controller 100 determines whether the sublimated SU removed from the exhaust BE is based on the monitoring by the monitoring sensor 60. Determining whether or not the amount is greater than or equal to a predetermined amount, and controlling the liquid supply mechanism 40 to increase the flow rate of the cleaning liquid when the sublimation product SU is greater than or equal to the predetermined amount. Has been. Thereby, the actual amount of sublimate can be determined, and the flow rate of the cleaning liquid can be increased at an appropriate timing.

  The monitoring sensor 60 is provided on the side wall 31 of the container body 30. Thereby, the amount of sublimation SU attached to the side wall 31 can be monitored, and the flow rate of the cleaning liquid can be increased at an appropriate timing.

  The coating / developing apparatus 2 further includes a recovery tank 50 that recovers the sublimate SU separated from the exhaust BE, and the liquid supply mechanism 40 supplies the cleaning liquid to the recovery tank 50. By collecting the sublimate SU using the collection tank 50 to which the cleaning liquid is supplied, the sublimated SU whose concentration is diluted by the cleaning liquid can be recovered. Accumulation (sticking) and the like can be suppressed.

  The monitoring sensor 60 may be provided in the collection tank 50. Thereby, the amount of the sublimate SU recovered can be monitored, and the flow rate of the cleaning liquid can be increased at an appropriate timing.

  Although the embodiment has been described above, the present invention is not necessarily limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.

  For example, as shown in FIG. 13A, the liquid supply mechanism 140 may supply the cleaning liquid so that the mist-like cleaning liquid passes through the exhaust pipe 81 that is the flow path of the exhaust BE. Good. In this case, the pipe 142 a of the liquid supply mechanism 40 is inserted into the exhaust pipe 81, and the nozzle 144 a attached to the tip of the pipe 142 a ejects a mist-like cleaning liquid in the exhaust pipe 81. Thereby, the sublimation SU can be captured by the mist-like cleaning liquid in the flow path of the exhaust BE, and the sublimation SU can be suitably removed from the exhaust BE.

  Further, as shown in FIG. 13B, a heater 235 (heating unit) that heats a part of the container body 30 may be disposed in a partial region of the container body 30. More specifically, as shown in FIG. 14, the heater 235 may be disposed in the exhaust introduction portion 201 that is the exhaust BE introduction region (portion close to the supply port of the nozzle 44 a) in the container body 30. As described above, the sublimate SU tends to aggregate and adhere in a state where the temperature is lowered. For this reason, when the exhaust introduction part 201 is heated by the heater 235, the exhaust introduction part 201 can be made an area where the sublimation SU is hardly attached. Thereby, it is possible to suppress the sublimation SU from adhering to the vicinity of the exhaust duct 90, and to more appropriately suppress the sublimation SU from being clogged in the exhaust duct 90. By providing the heater 235, the sublimate SU is mainly attached to the sublimate agglomerate 202, which is a region downstream of the exhaust introduction part 201. That is, the sublimation SU is attached in the vicinity of the collection tank 50. Thereby, the collection | recovery efficiency of the sublimate SU can be improved. In this case, the monitoring sensor 60 is disposed in the sublimate aggregation unit 202. Thereby, in the sublimate aggregation part 202 to which the sublimate SU tends to adhere, the amount of sublimate SU can be monitored appropriately.

  Further, as shown in FIG. 13C, a vibrator 236 that applies vibration to the container body 30 may be provided. By vibrating the vibrator 236, the sublimation SU attached to the side wall 31 can be shaken off and removed. Such a vibrator 236 is disposed, for example, in the sublimation aggregate 202 (see FIG. 14) to which the sublimation SU is mainly attached.

  DESCRIPTION OF SYMBOLS 2 ... Coating / development apparatus (substrate processing apparatus), 30 ... Container main body, 31 ... Side wall, 40 ... Liquid supply mechanism, 50 ... Collection tank, 60 ... Monitoring sensor, 100 ... Controller, 235 ... Heater (heating part), 236 ... vibrator, U2 ... heat treatment unit (heat treatment part), W ... wafer (substrate).

Claims (11)

A heat treatment part for heat-treating the substrate on which the coating film is formed;
Exhaust gas containing sublimate generated by the heat treatment flows in, and the exhaust gas forms a swirl flow along the wall surface so that the sublimate is collected by the cyclone effect,
A substrate processing apparatus comprising: a liquid supply mechanism that supplies a cleaning liquid to the container body.   The substrate processing apparatus according to claim 1, wherein the liquid supply mechanism discharges and supplies the cleaning liquid along the swirl flow.   The substrate processing apparatus according to claim 1, wherein the liquid supply mechanism supplies the cleaning liquid such that the mist-shaped cleaning liquid passes through the exhaust passage. A controller,
The controller is
Causing the heat treatment section to perform heat treatment of the substrate;
The substrate according to any one of claims 1 to 3, wherein the substrate is configured to perform control of the liquid supply mechanism so that a flow rate of the cleaning liquid increases as the heat treatment is performed. Processing equipment. A controller,
A monitoring sensor for monitoring the sublimate removed from the exhaust, and
The controller is
Based on monitoring by the monitoring sensor, determining whether the sublimate removed from the exhaust is a predetermined amount or more;
When the sublimation product is equal to or greater than the predetermined amount, the liquid supply mechanism is controlled so as to increase the flow rate of the cleaning liquid. The substrate processing apparatus according to one item.   The substrate processing apparatus according to claim 5, wherein the monitoring sensor is provided on a side wall of the container body. A recovery tank for recovering the sublimate separated from the exhaust;
The substrate processing apparatus according to claim 5, wherein the liquid supply mechanism supplies the cleaning liquid to the recovery tank.   The substrate processing apparatus according to claim 7, wherein the monitoring sensor is provided in the collection tank.   The substrate processing apparatus according to claim 1, further comprising a heating unit that is disposed in an exhaust introduction part that is an introduction region of the exhaust in the container main body and heats the container main body. A controller,
A monitoring sensor for monitoring the sublimate removed from the exhaust, and
The controller is
Based on monitoring by the monitoring sensor, determining whether the sublimate removed from the exhaust is a predetermined amount or more;
Controlling the liquid supply mechanism so as to increase the flow rate of the cleaning liquid when the sublimation product is equal to or greater than the predetermined amount, and
The substrate processing apparatus according to claim 9, wherein the monitoring sensor is disposed in a sublimate aggregating portion that is a region downstream of the exhaust introduction portion in the container main body.   The substrate processing apparatus according to claim 1, further comprising a vibrator that applies vibration to the container body.

Images