JP2018037639A5 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- JP2018037639A5 JP2018037639A5 JP2017067311A JP2017067311A JP2018037639A5 JP 2018037639 A5 JP2018037639 A5 JP 2018037639A5 JP 2017067311 A JP2017067311 A JP 2017067311A JP 2017067311 A JP2017067311 A JP 2017067311A JP 2018037639 A5 JP2018037639 A5 JP 2018037639A5
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- molecular
- semiconductor chip
- lead frame
- layer
- mold resin
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- 239000004065 semiconductor Substances 0.000 title claims description 65
- 239000011347 resin Substances 0.000 claims description 40
- 229920005989 resin Polymers 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 14
- 238000007747 plating Methods 0.000 claims description 11
- 125000000524 functional group Chemical group 0.000 claims description 6
- 125000005842 heteroatoms Chemical group 0.000 claims description 6
- 150000003918 triazines Chemical class 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 4
- 239000011780 sodium chloride Substances 0.000 claims description 4
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 125000003277 amino group Chemical group 0.000 claims description 3
- IVRMZWNICZWHMI-UHFFFAOYSA-N azide group Chemical group [N-]=[N+]=[N-] IVRMZWNICZWHMI-UHFFFAOYSA-N 0.000 claims description 3
- 125000004435 hydrogen atoms Chemical group [H]* 0.000 claims description 3
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 29
- 238000000465 moulding Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000007767 bonding agent Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- AGVXRMIPDLFTHE-UHFFFAOYSA-N 3H-dithiole;triazine Chemical group C1SSC=C1.C1=CN=NN=C1 AGVXRMIPDLFTHE-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Description
いくつかの実施形態を説明したが、これらの実施形態は、例として提示したものであり、発明の範囲を限定することは意図していない。これら実施形態は、その他の様々な形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。これら実施形態やその変形は、発明の範囲や要旨に含まれると同様に、特許請求の範囲に記載された発明とその均等の範囲に含まれるものである。
以下に、本願出願の当初の特許請求の範囲に記載された発明を付記する。
［１］半導体チップと、
導電部と、
前記半導体チップと前記導電部との間に設けられたボンディングワイヤと、
前記半導体チップ、前記導電部の少なくとも一部、及び前記ボンディングワイヤを覆うモールド樹脂部と、少なくとも前記ボンディングワイヤの表面と前記モールド樹脂部との聞に設けられた分子接合層と、を備え、
前記分子接合層の少なくとも一部は、前記ボンディングワイヤに含まれる第１金属と化学結合し、
前記分子接合層の少なくとも一部は、前記モールド樹脂部に含まれる樹脂と化学結合した、
半導体パッケージ。
［２］前記分子接合層は、前記ボンディングワイヤの前記第１金属と前記モールド樹脂部の前記樹脂との両方に共有結合した分子接合体を含む
［１］に記載の半導体パッケージ。
［３］前記分子接合層は、前記ボンディングワイヤの表面と前記モールド樹脂部との聞に設けられて前記ボンディングワイヤと前記モールド樹脂部との両方に化学結合した第１部分と、前記導電部の表面と前記モールド樹脂部との聞に設けられて前記導電部と前記モールド樹脂部との両方に化学結合した第２部分とを有した、
［１］に記載の半導体パッケージ。
［４］前記導電部は、この導電部の表面に金属めっき層を含み、
前記分子接合層の少なくとも一部は、前記金属めっき層に含まれる第２金属と前記モールド樹脂部に含まれる前記樹脂との両方に化学結合した
［３］に記載の半導体パッケージ。
［５］前記導電部は、第３金属によって形成された導電部本体をさらに有し、
前記金属めっき層は、前記導電部本体の表面に設けられたバリア層である
［１］に記載の半導体パッケージ。
［６］前記第２金属は、前記第３金属よりも拡散係数が小さい
［５］に記載の半導体パッケージ。
［７］前記第２金属は、ニッケル、ニッケル合金、チタン、チタン合金、タングステン、及びタングステン合金の少なくとも１つを含む
［５］に記載の半導体パッケージ。
［８］前記導電部は、少なくとも一部が前記モールド樹脂部の外部に突出したリードフレームである
［４］に記載の半導体パッケージ。
［９］前記導電部は、前記半導体パッケージの基板の導電パッドである
[３］に記載の半導体パッケージ。
［１０］前記分子接合層は、トリアジンジチオール残基を含む、
[１]に記載の半導体パッケージ。
［１１］前記分子接合層の少なくとも一部は、単分子膜状である
[１]に記載の半導体パッケージ。
［１２］表面に金属めっき層を有した導電部と、
前記金属めっき層の表面に設けられた分子接合層と、
前記分子接合層によって前記金属めっき層に接合された樹脂部と、
を備え、
前記分子接合層の少なくとも一部は、前記金属めっき層に含まれる金属と化学結合し、
前記分子接合層の少なくとも一部は、前記樹脂部に含まれる樹脂と化学結合した、
半導体パッケージ。
［１３］半導体チップと導電部とをボンディングワイヤによって電気的に接続し、
少なくとも前記ボンディングワイヤの表面に分子接合剤を塗布することで分子接合層を形成し、
少なくとも(at least by)、半導体チップ、前記導電部の少なくとも一部、及び前記ボンディングワイヤを覆う樹脂を供給することで、前記分子接合層によって少なくとも前記ボンディングワイヤに接合されたモールド樹脂部を形成する、
半導体パッケージの製造方法。
［１４］前記分子接合剤は、金属及び樹脂の両方に化学結合可能である
［１３］に記載の半導体パッケージの製造方法。
［１５］前記ボンディングワイヤの表面における前記分子接合層の少なくとも一部を単分子膜状に形成する、
［１３］に記載の半導体パッケージの製造方法。
［１６］前記分子接合層剤を、前記ワイヤボンディングの表面に塗布するのと略同時に、前記導
電部の表面にも塗布する
［１３］に記載の半導体パッケージの製造方法。
［１７］前記分子接合層剤を、前記ワイヤボンディングの表面及び前記導電部の表面に塗布するのと略同時に前記半導体チップの表面にも塗布する
［１６］に記載の半導体パッケージの製造方法。
［１８］前記分子接合剤は、トリアジン誘導体を含む
［１３］に記載の半導体パッケージの製造方法。
［１９］前記トリアジン誘導体は、一般式（Ｃ１）で表される化合物である。
（式中、Ｒは、炭化水素基又は異種原子もしくは官能基が介在してもよい炭化水素基を示し、Ｘは、水素原子又は炭化水素基を示し、Ｙは、アルコキシ基を示し、
Ｚは、塩を形成していてもよい、チオール基、アミノ基もしくはアジド基、又は異種原子もしくは官能基が介在しでもよい炭化水素基を示し、ｎ１は１〜３までの整数であり、ｎ
２は１〜２までの整数である。）
[１８]に記載の半導体パッケージの製造方法。
Although several embodiments have been described, these embodiments have been presented by way of example and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are also included in the invention described in the claims and the equivalents thereof.
Hereinafter, the invention described in the scope of claims of the present application will be appended.
[1] a semiconductor chip;
A conductive part;
A bonding wire provided between the semiconductor chip and the conductive portion;
The semiconductor chip, at least a part of the conductive portion, and a mold resin portion covering the bonding wire, and a molecular bonding layer provided at least between the surface of the bonding wire and the mold resin portion,
At least a part of the molecular bonding layer is chemically bonded to a first metal included in the bonding wire,
At least a part of the molecular bonding layer is chemically bonded to the resin contained in the mold resin portion.
Semiconductor package.
[2] The molecular bonding layer includes a molecular bonding body that is covalently bonded to both the first metal of the bonding wire and the resin of the mold resin portion.
The semiconductor package according to [1].
[3] The molecular bonding layer is provided between the surface of the bonding wire and the mold resin portion and chemically bonded to both the bonding wire and the mold resin portion; A second portion that is provided between the surface and the mold resin portion and is chemically bonded to both the conductive portion and the mold resin portion;
The semiconductor package according to [1].
[4] The conductive part includes a metal plating layer on a surface of the conductive part,
At least a part of the molecular bonding layer is chemically bonded to both the second metal contained in the metal plating layer and the resin contained in the mold resin portion.
The semiconductor package according to [3].
[5] The conductive part further includes a conductive part body formed of a third metal,
The metal plating layer is a barrier layer provided on the surface of the conductive part main body.
The semiconductor package according to [1].
[6] The second metal has a smaller diffusion coefficient than the third metal.
The semiconductor package according to [5].
[7] The second metal includes at least one of nickel, nickel alloy, titanium, titanium alloy, tungsten, and tungsten alloy.
The semiconductor package according to [5].
[8] The conductive portion is a lead frame at least part of which protrudes outside the mold resin portion.
[4] The semiconductor package according to [4].
[9] The conductive part is a conductive pad of the substrate of the semiconductor package.
The semiconductor package according to [3].
[10] The molecular bonding layer includes a triazine dithiol residue.
The semiconductor package according to [1].
[11] At least a part of the molecular bonding layer is a monomolecular film.
The semiconductor package according to [1].
[12] a conductive portion having a metal plating layer on the surface;
A molecular bonding layer provided on the surface of the metal plating layer;
A resin portion bonded to the metal plating layer by the molecular bonding layer;
With
At least a part of the molecular bonding layer is chemically bonded to a metal contained in the metal plating layer,
At least a part of the molecular bonding layer is chemically bonded to the resin contained in the resin portion.
Semiconductor package.
[13] Electrically connecting the semiconductor chip and the conductive portion by a bonding wire;
A molecular bonding layer is formed by applying a molecular bonding agent to at least the surface of the bonding wire,
At least by, by supplying a resin that covers the semiconductor chip, at least a part of the conductive part, and the bonding wire, a mold resin part bonded to at least the bonding wire by the molecular bonding layer is formed. ,
A method for manufacturing a semiconductor package.
[14] The molecular bonding agent can be chemically bonded to both metal and resin.
[13] The method for producing a semiconductor package according to [13].
[15] Forming at least a part of the molecular bonding layer on the surface of the bonding wire in the form of a monomolecular film,
[13] The method for producing a semiconductor package according to [13].
[16] At substantially the same time as applying the molecular bonding layer agent to the surface of the wire bonding,
Apply to the surface of electrical parts
[13] The method for producing a semiconductor package according to [13].
[17] The molecular bonding layer agent is applied to the surface of the semiconductor chip substantially simultaneously with the surface of the wire bonding and the surface of the conductive portion.
[16] The method for producing a semiconductor package according to [16].
[18] The molecular bonding agent includes a triazine derivative.
[13] The method for producing a semiconductor package according to [13].
[19] The triazine derivative is a compound represented by the general formula (C1).
(In the formula, R represents a hydrocarbon group or a hydrocarbon group in which a hetero atom or a functional group may intervene, X represents a hydrogen atom or a hydrocarbon group, Y represents an alkoxy group,
Z represents a thiol group, an amino group or an azide group which may form a salt, or a hydrocarbon group which may be intervened by a hetero atom or a functional group, n1 is an integer from 1 to 3,
2 is an integer from 1 to 2. )
[18] The method for producing a semiconductor package according to [18].
Claims (13)
外部装置に接続するリードフレームと、
前記端子と前記リードフレームを接続するボンティングワイヤと、
前記半導体チップと前記ボンディングワイヤを封入し、前記リードフレームの一部が外に延出しているモールド樹脂層と、
前記ボンディングワイヤの表面に第１部分を有し、前記ボンディングワイヤの材料及び前記モールド樹脂層の材料に共有結合した第１分子部分と、前記リードフレームの表面に第２の部分を有し、前記リードフレームの材料及び前記モールド樹脂層の材料に共有結合した第２分子部分とを有する分子接合層とを含み、
前記リードフレームは、その本体上に金属めっき層を含み、前記第２分子部分は、前記金属めっき層の金属に共有結合しており、
前記分子接合層は、以下の一般式（Ｃ１）で表されるトリアジン誘導体を含む
半導体装置。
A lead frame connected to an external device;
A bonding wire connecting the terminal and the lead frame ;
Encapsulating the semiconductor chip and the bonding wire, and a mold resin layer in which a part of the lead frame extends outside ;
Having a first portion on the surface of the bonding wire, a first molecular portion covalently bonded to the material of the bonding wire and the material of the mold resin layer , and a second portion on the surface of the lead frame, A molecular bonding layer having a second frame portion covalently bonded to the material of the lead frame and the material of the mold resin layer ,
The lead frame includes a metal plating layer on a main body thereof, and the second molecular portion is covalently bonded to a metal of the metal plating layer;
The molecular bonding layer, <br/> semiconductor device including a triazine derivative represented by the following general formula (C1).
前記分子接合層の第３部分は、前記ベースの表面にあり、前記ベースの材料と前記モールド樹脂層の材料に共有結合した第３分子部分を含む請求項１に記載の半導体装置。 The semiconductor chip further includes a base bonded via a conductive bonding layer,
The third part of the molecule bonding layer is in the base of the surface, the semiconductor device according to claim 1 comprising a third molecular moiety covalently bonded to the material of the base material and the molding resin layer.
外部装置に接続するリードフレームと、
前記端子と前記リードフレームを接続するボンティングワイヤと、
前記半導体チップと前記ボンディングワイヤを封入し、前記ボンディングワイヤの一部は、外に延出しているモールド樹脂層と、
前記リードフレームの表面に第１部分を有し、前記リードフレームの材料及び前記モールド樹脂層の材料に共有結合した第１分子部分を有する分子接合層とを含み、
前記リードフレームは、その本体上に金属めっき層を含み、前記第１分子部分は、前記金属めっき層の金属に共有結合しており、
前記分子接合層は、以下の一般式（Ｃ１）で表されるトリアジン誘導体を含む
半導体装置。
A lead frame connected to an external device;
A bonding wire connecting the terminal and the lead frame;
Encapsulating the semiconductor chip and the bonding wire, a part of the bonding wire, a mold resin layer extending outside,
A molecular bonding layer having a first part on the surface of the lead frame and having a first molecular part covalently bonded to the material of the lead frame and the material of the mold resin layer;
The lead frame includes a metal plating layer on a main body thereof, and the first molecular portion is covalently bonded to a metal of the metal plating layer;
The molecular bonding layer is a semiconductor device including a triazine derivative represented by the following general formula (C1) .
前記分子接合層の第２部分は、前記ベース上にあり、前記ベースの材料と前記モールド樹脂層の材料に共有結合した第２分子部分を含む請求項７に記載の半導体装置。 The semiconductor chip further includes a base bonded via a conductive bonding layer,
The semiconductor device according to claim 7 , wherein the second portion of the molecular bonding layer includes a second molecular portion that is on the base and is covalently bonded to the material of the base and the material of the mold resin layer .
外部装置に接続するリードフレームと、
前記端子と前記リードフレームを接続するボンティングワイヤと、
前記半導体チップと前記ボンディングワイヤを封入し、前記ボンディングワイヤの一部が外に延出しているモールド樹脂層と、
前記ボンディングワイヤの表面に第１部分を有し、前記ボンディングワイヤの材料及び前記モールド樹脂層の材料に共有結合した第１分子部分を有する分子接合層とを含む半導体装置であって、
前記分子接合層は、前記半導体チップの端子、前記リードフレーム、及び前記半導体チップの露出された表面のそれぞれの上に部分をさらに含み、
前記部分は、各々、前記半導体チップの端子の材料及び前記モールド樹脂層の材料に共有結合した第２分子部分と、前記リードフレームの材料及び前記モールド樹脂層の材料に共有結合した第３分子部分と、前記半導体チップの材料及び前記モールド樹脂層の材料に共有結合した第４分子部分とを含む半導体装置。 A semiconductor chip having terminals thereon;
A lead frame connected to an external device;
A bonding wire connecting the terminal and the lead frame;
Encapsulating the semiconductor chip and the bonding wire, and a mold resin layer in which a part of the bonding wire extends outside;
A semiconductor device having a first portion on a surface of the bonding wire and a molecular bonding layer having a first molecular portion covalently bonded to the material of the bonding wire and the material of the mold resin layer ;
The molecular bonding layer further includes a portion on each of the terminal of the semiconductor chip, the lead frame, and the exposed surface of the semiconductor chip;
The portions are respectively a second molecular portion covalently bonded to the material of the terminal of the semiconductor chip and the material of the mold resin layer, and a third molecular portion covalently bonded to the material of the lead frame and the material of the mold resin layer. When a semiconductor device and a fourth molecule moiety covalently bonded to the material of the material and the molded resin layer of the semiconductor chip.
外部装置に接続するリードフレームと、
前記端子と前記リードフレームを接続するボンティングワイヤと、
前記半導体チップと前記ボンディングワイヤを封入し、前記ボンディングワイヤの一部は、外に延出しているモールド樹脂層と、
前記リードフレームの表面に第１部分を有し、前記リードフレームの材料及び前記モールド樹脂層の材料に共有結合した分子部分を有する分子接合層とを含む半導体装置であって、
前記分子接合層は、前記半導体チップの端子、前記半導体チップの露出された表面、及び前記ボンディングワイヤのそれぞれの上に部分をさらに含み、前記部分は、各々、前記半導体チップの端子の材料及び前記モールド樹脂層の材料に共有結合した第２分子部分と、前記半導体チップの露出された表面及び前記モールド樹脂層の材料に共有結合した第３分子部分と、前記ボンディングワイヤの材料及び前記モールド樹脂層の材料に共有結合した第４分子部分とを含む半導体装置。 A semiconductor chip having terminals thereon;
A lead frame connected to an external device;
A bonding wire connecting the terminal and the lead frame ;
Encapsulating the semiconductor chip and the bonding wire, a part of the bonding wire, a mold resin layer extending outside,
A semiconductor device including a molecular bonding layer having a first portion on a surface of the lead frame and having a molecular portion covalently bonded to a material of the lead frame and a material of the mold resin layer ;
The molecular bonding layer further includes a portion on each of the terminal of the semiconductor chip, the exposed surface of the semiconductor chip, and the bonding wire , and the portions respectively include the material of the terminal of the semiconductor chip and the A second molecular part covalently bonded to the material of the mold resin layer; a third molecular part covalently bonded to the exposed surface of the semiconductor chip and the material of the mold resin layer; a material of the bonding wire; and the mold resin layer. a semiconductor device and a fourth molecule moiety covalently bonded to the material of.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662382041P | 2016-08-31 | 2016-08-31 | |
| US62/382041 | 2016-08-31 | ||
| US15/440,862 US10163765B2 (en) | 2016-04-19 | 2017-02-23 | Semiconductor device that includes a molecular bonding layer for bonding of elements |
| US15/440862 | 2017-02-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018037639A JP2018037639A (en) | 2018-03-08 |
| JP2018037639A5 true JP2018037639A5 (en) | 2019-02-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017067311A Pending JP2018037639A (en) | 2016-08-31 | 2017-03-30 | Semiconductor package and semiconductor package manufacturing method |
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| JP (1) | JP2018037639A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2020011410A (en) * | 2018-07-17 | 2020-01-23 | 株式会社デンソー | Joint structure and method for manufacturing the same, and heat exchanger |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61287155A (en) * | 1985-06-14 | 1986-12-17 | Hitachi Ltd | Semiconductor device |
| JPS63266844A (en) * | 1987-04-24 | 1988-11-02 | Hitachi Ltd | Manufacture of semiconductor device |
| US5122858A (en) * | 1990-09-10 | 1992-06-16 | Olin Corporation | Lead frame having polymer coated surface portions |
| JPH05218265A (en) * | 1992-02-03 | 1993-08-27 | Hitachi Cable Ltd | Composite lead frame for semiconductor device |
| JP2004087889A (en) * | 2002-08-28 | 2004-03-18 | Matsushita Electric Ind Co Ltd | Lead frame for semiconductor device |
| JP2009137153A (en) * | 2007-12-06 | 2009-06-25 | Kagawa Gakusei Venture:Kk | Precious metal coating and jewel, ornament, apparel product and electronic instrument products using it, and those manufacturing processes |
| JP4618451B2 (en) * | 2008-02-19 | 2011-01-26 | 信越化学工業株式会社 | Organopolysiloxane having triazine thiol group and alkenyl group, method for producing the same, and primer composition for adhesion containing the organopolysiloxane |
| JP5922038B2 (en) * | 2010-12-07 | 2016-05-24 | 株式会社朝日ラバー | Adhesive of adherend material and peroxide-containing polymer material and method for producing the same |
| JP2013157400A (en) * | 2012-01-27 | 2013-08-15 | Mitsubishi Electric Corp | Semiconductor device and method for manufacturing the same |
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2017
- 2017-03-30 JP JP2017067311A patent/JP2018037639A/en active Pending
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