JP2013157400A - Semiconductor device and method for manufacturing the same - Google Patents
Semiconductor device and method for manufacturing the same Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
この発明は、半導体素子を樹脂で封止して形成される半導体装置およびその製造方法に関するものである。 The present invention relates to a semiconductor device formed by sealing a semiconductor element with a resin and a manufacturing method thereof.
半導体装置（以下、パワーモジュールと称す）は、電源（電力）の制御や供給を行う半導体素子（以下、パワー半導体素子と称す）を樹脂で封止して電気的な絶縁を確保する。従来からこの種のパワーモジュールとしては、金属体およびこの金属体にシリコン（Ｓｉ）製パワー半導体素子などの電子素子を搭載してなる実装体を、モールド樹脂で封止したものが利用されている（例えば、特許文献１参照）。モールド樹脂としては、エポキシ樹脂、硬化剤および無機質充填材を主成分とするエポキシ樹脂組成物が用いられる。シリコン（Ｓｉ）製パワー半導体素子とモールド樹脂との密着性が低いと、モールド樹脂による実装体の封止が不十分となり信頼性を確保できなくなる。そのため、シリコン（Ｓｉ）製パワー半導体素子とモールド樹脂との密着性向上の手段として、カップリング剤の使用が知られている（例えば、特許文献２参照）。 In a semiconductor device (hereinafter referred to as a power module), a semiconductor element (hereinafter referred to as a power semiconductor element) that controls and supplies power (power) is sealed with resin to ensure electrical insulation. Conventionally, as this type of power module, a metal body and a mounting body in which an electronic element such as a power semiconductor element made of silicon (Si) is mounted on the metal body is sealed with a mold resin. (For example, refer to Patent Document 1). As mold resin, the epoxy resin composition which has an epoxy resin, a hardening | curing agent, and an inorganic filler as a main component is used. If the adhesion between the power semiconductor element made of silicon (Si) and the mold resin is low, the mounting body is not sufficiently sealed with the mold resin, and the reliability cannot be ensured. Therefore, the use of a coupling agent is known as a means for improving the adhesion between the silicon (Si) power semiconductor element and the mold resin (see, for example, Patent Document 2).
一般的に、カップリング剤として用いられるシリコーン系カップリング剤（例えば、シランカップリング剤）は、一分子中に第一の反応基としてアルコキシシラン部位と第二の反応基として有機官能基とを併せもつ有機ケイ素化合物である。第一の反応基であるアルコキシシラン部位は、水分の存在下で加水分解してシラノール基を生成し、実装体表面の水酸基との水素結合を介して実装体表面に移行し、さらに脱水縮合反応により無機物表面と強固な共有結合する。一方、第二の反応基である有機官能基は使用するモールド樹脂成分に応じて様々な官能基が選択でき、樹脂成分と化学的に結合する。この２種類の反応によりカップリング剤を介して実装体とモールド樹脂との結合が得られる。 Generally, a silicone-based coupling agent (for example, a silane coupling agent) used as a coupling agent has an alkoxysilane moiety as a first reactive group and an organic functional group as a second reactive group in one molecule. It is an organosilicon compound. The alkoxysilane site, which is the first reactive group, is hydrolyzed in the presence of moisture to produce a silanol group, which is transferred to the surface of the mounting body through a hydrogen bond with a hydroxyl group on the surface of the mounting body, and then a dehydration condensation reaction. Due to this, a strong covalent bond is formed with the inorganic surface. On the other hand, as the organic functional group which is the second reactive group, various functional groups can be selected according to the mold resin component to be used, and chemically bond with the resin component. By these two types of reactions, the mounting body and the mold resin can be bonded via the coupling agent.
また、シランカップリング処理は、シランカップリング剤を水や有機溶剤に溶かして十分に加水分解させた水溶液を調整し、これを実装体表面にスプレー、浸漬などの方法で塗布した後で乾燥して実装体表面に固着させるとともに、有機官能基を実装体表面の外に配向させる。その後、モールド樹脂で封止する際に樹脂成分と有機官能基とを化学的に結合させてなる。また、モールド樹脂中にシランカップリング剤を混入し、実装体表面の吸着水を利用してシラノール基との反応を生じさせる方法もとられる。金属体およびシリコン（Ｓｉ）製パワー半導体素子の表面には自然酸化膜が形成されているため親水性が高く、カップリング処理により実装体表面で効果的に作用する。 In addition, the silane coupling treatment is performed by preparing an aqueous solution in which a silane coupling agent is dissolved in water or an organic solvent and fully hydrolyzed, and applying the solution to the surface of the mounting body by spraying or dipping, followed by drying. Then, the organic functional group is oriented to the outside of the surface of the mounting body. Then, when sealing with mold resin, a resin component and an organic functional group are chemically combined. In addition, a method in which a silane coupling agent is mixed in the mold resin and a reaction with a silanol group is caused by using adsorbed water on the surface of the mounting body. Since a natural oxide film is formed on the surfaces of the metal body and the silicon (Si) power semiconductor element, it has high hydrophilicity and acts effectively on the surface of the mounting body by the coupling treatment.
従来のパワー半導体装置では、パワー半導体素子とモールド樹脂との密着性を強化するために、カップリング剤が用いられている。ところで、従来のシリコン（Ｓｉ）製パワー半導体素子に比べて、低損失、高耐圧、高温動作が可能な化合物半導体素子のパワーモジュールへの適用が進められている。化合物半導体素子、たとえばパワーモジュールへの適用が検討されている炭化ケイ素（ＳｉＣ）製パワー半導体素子は、従来のシリコン（Ｓｉ）製パワー半導体素子に比べて損失が小さく高温動作が可能であり、使用環境において生じる温度変化の増大が想定される。このとき、エポキシ樹脂と化合物半導体素子、あるいはエポキシ樹脂と金属体の熱膨張係数の差によって各界面に発生するひずみが増加し、この部分での剥離発生・進行によって電気的絶縁信頼性が損なわれる。さらに、炭化ケイ素（ＳｉＣ）や窒化ガリウム（ＧａＮ）など化合物半導体素子は、その表面が疎水性を示す場合が多く、水を介した反応が生じにくい性質がある。そのため、表面が疎水性を示し、高温動作が可能な化合物半導体においては、パワー半導体素子とモールド樹脂との密着性強化のためにカップリング剤を用いても、高温動作環境に耐えうる密着性を得ることが難しいという問題点があった。 In a conventional power semiconductor device, a coupling agent is used to enhance the adhesion between the power semiconductor element and the mold resin. By the way, compared with the conventional power semiconductor element made from silicon (Si), the application to the power module of the compound semiconductor element in which a low loss, a high pressure | voltage resistant, and high temperature operation | movement is advanced. Power semiconductor elements made of silicon carbide (SiC), which are considered to be applied to compound semiconductor elements, for example, power modules, can be operated at higher temperatures with lower losses than conventional silicon (Si) power semiconductor elements. An increase in temperature change occurring in the environment is assumed. At this time, the strain generated at each interface increases due to the difference in thermal expansion coefficient between the epoxy resin and the compound semiconductor element, or between the epoxy resin and the metal body, and the electrical insulation reliability is impaired due to the occurrence and progress of peeling at this portion. . Furthermore, compound semiconductor elements such as silicon carbide (SiC) and gallium nitride (GaN) often have a hydrophobic surface, and have a property that reaction through water hardly occurs. Therefore, in compound semiconductors that have hydrophobic surfaces and are capable of high-temperature operation, even if a coupling agent is used to enhance the adhesion between the power semiconductor element and the mold resin, the adhesion can withstand high-temperature operating environments. There was a problem that it was difficult to obtain.
この発明は、上述のような課題を解決するためになされたもので、高温動作可能な化合物半導体素子をパワー半導体素子として用いた場合においても、パワー半導体素子とモールド樹脂との密着性を向上させることができる半導体装置を得るものである。 The present invention has been made to solve the above-described problems, and improves the adhesion between the power semiconductor element and the mold resin even when a compound semiconductor element capable of operating at high temperature is used as the power semiconductor element. A semiconductor device that can be obtained is obtained.
この発明に係る半導体装置においては、金属部材に半導体素子を搭載した実装体を封止樹脂によって封止して形成した半導体装置であって、前記半導体素子の表面が親水性であり、前記半導体素子と前記封止樹脂との界面に、無機材料に結合する第一の反応基と有機材料に結合する第二の反応基とを有するカップリング剤が介在することを特徴とする半導体装置。 The semiconductor device according to the present invention is a semiconductor device formed by sealing a mounting body in which a semiconductor element is mounted on a metal member with a sealing resin, the surface of the semiconductor element being hydrophilic, and the semiconductor element A semiconductor device, wherein a coupling agent having a first reactive group bonded to an inorganic material and a second reactive group bonded to an organic material is interposed at an interface between the sealing resin and the sealing resin.
この発明は、半導体素子の表面が親水性であり、半導体素子と封止樹脂との界面に、無機材料に結合する第一の反応基と有機材料に結合する第二の反応基とを有するカップリング剤が介在するので、高温動作可能な化合物半導体素子をパワー半導体素子として用いた場合においても、パワー半導体素子とモールド樹脂との密着性を向上させることが可能となる。 The present invention provides a cup having a hydrophilic surface on a surface of a semiconductor element and a first reactive group bonded to an inorganic material and a second reactive group bonded to an organic material at an interface between the semiconductor element and the sealing resin. Since the ring agent is present, the adhesion between the power semiconductor element and the mold resin can be improved even when a compound semiconductor element capable of operating at high temperature is used as the power semiconductor element.
実施の形態１．
図１は、本発明の実施の形態１におけるパワー半導体装置の断面概略図である。図１に示すように、半導体装置であるパワー半導体装置１０は、半導体素子であるパワー半導体素子１、接合材２，４、金属体３、ボンディングワイヤ５、金属製リード６ａ，６ｂ、実装体７、モールド樹脂８、カップリング剤９で構成されている。
Embodiment 1 FIG.
FIG. 1 is a schematic cross-sectional view of a power semiconductor device according to Embodiment 1 of the present invention. As shown in FIG. 1, a power semiconductor device 10 that is a semiconductor device includes a power semiconductor element 1 that is a semiconductor element, bonding materials 2 and 4, a metal body 3, a bonding wire 5, metal leads 6 a and 6 b, and a mounting body 7. , Mold resin 8 and coupling agent 9.
パワー半導体素子１は、たとえば炭化ケイ素（ＳｉＣ）や窒化ガリウム（ＧａＮ）などの化合物半導体よりなるもので、公知の半導体プロセスによりウエハ上にデバイスが形成されたものであり、金属体３は銅（Ｃｕ）、ニッケル（Ｎｉ）、鉄（Ｆｅ）などの金属からなる板形状のものであり、接合材２，４はハンダや導電性接着剤など導電性接合材料のほか、樹脂接着剤などが挙げられる。金属製リード６ａ，６ｂは銅（Ｃｕ）、ニッケル（Ｎｉ）、鉄（Ｆｅ）などの金属からなり、ボンディングワイヤ５はアルミニウム（Ａｌ）、金（Ａｕ）、銅（Ｃｕ）などが使用できる。封止樹脂は、金属体３にパワー半導体素子１を搭載した実装体７の全体を覆い封止するためのものである。封止樹脂であるモールド樹脂８はエポキシ樹脂、硬化剤および無機質充填材を主成分とするエポキシ樹脂組成物のほか、一般的な樹脂封止材が使用できる。 The power semiconductor element 1 is made of a compound semiconductor such as silicon carbide (SiC) or gallium nitride (GaN), and a device is formed on a wafer by a known semiconductor process. The metal body 3 is made of copper ( Cu), nickel (Ni), iron (Fe) and other plate-shaped materials, and the bonding materials 2 and 4 include conductive bonding materials such as solder and conductive adhesive, and resin adhesives. It is done. The metal leads 6a and 6b are made of metal such as copper (Cu), nickel (Ni), iron (Fe), and the bonding wire 5 can be made of aluminum (Al), gold (Au), copper (Cu), or the like. The sealing resin is for covering and sealing the entire mounting body 7 in which the power semiconductor element 1 is mounted on the metal body 3. As the mold resin 8 which is a sealing resin, a general resin sealing material can be used in addition to an epoxy resin composition mainly composed of an epoxy resin, a curing agent and an inorganic filler.
また、パワー半導体素子１の表面は、親水化処理により親水性にする。この親水化処理を行うのが親水化工程（親水化する工程）である。パワー半導体素子１の親水化処理を施した表面とモールド樹脂８のパワー半導体素子１と対向する面とにより形成される界面には、無機材料に結合する第一の反応基と有機材料に結合する第二の反応基とを有するカップリング剤９があり、このカップリング剤９が介在した状態で、パワー半導体素子１はモールド樹脂８により樹脂封止される。このカップリング剤９をパワー半導体素子１表面に形成するのが、カップリング剤９を塗布する工程であるカップリング工程であり、モールド樹脂８によりパワー半導体素子１を搭載した実装体７を樹脂封止するのが封止する工程である封止工程である。 Further, the surface of the power semiconductor element 1 is made hydrophilic by a hydrophilic treatment. This hydrophilic treatment is performed in a hydrophilic step (hydrophilization step). The interface formed by the hydrophilic surface of the power semiconductor element 1 and the surface of the mold resin 8 facing the power semiconductor element 1 is bonded to the first reactive group bonded to the inorganic material and the organic material. There is a coupling agent 9 having a second reactive group, and the power semiconductor element 1 is resin-sealed with a mold resin 8 with the coupling agent 9 interposed. The coupling agent 9 is formed on the surface of the power semiconductor element 1 in a coupling step, which is a step of applying the coupling agent 9. The mounting body 7 on which the power semiconductor element 1 is mounted is molded by resin molding. It is the sealing process that is the process of sealing that stops.
図２は、本実施の形態によるパワー半導体装置の製造工程を示すフロー図である。まず始めに、ダイシング工程において、多数のパワー半導体素子１が形成されたウエハをダイシングテープに固着し、ダイシングして個片化する。次に、ピックアップ工程において、個片化されたパワー半導体素子１をピックアップする。次に、ダイボンド工程において、ピックアップしたパワー半導体素子１は接合材２を介して金属体３に搭載する。次に、配線工程において、パワー半導体素子１の金属体３と逆側の主面を、接合材４により直接金属リード６ｂの一端と、あるいはボンディングワイヤ５を介して金属製リード６ａの一端と電気的に接続して実装体７を形成する。ボンディングワイヤ５の接続方法としては、アルミのスティッチボンドのほか、金（Ａｕ）や銅（Ｃｕ）のボールボンディングなどの公知のワイヤボンディング工程が利用できる。 FIG. 2 is a flowchart showing a manufacturing process of the power semiconductor device according to the present embodiment. First, in a dicing process, a wafer on which a large number of power semiconductor elements 1 are formed is fixed to a dicing tape and diced into individual pieces. Next, in the pickup process, the separated power semiconductor elements 1 are picked up. Next, in the die bonding process, the picked-up power semiconductor element 1 is mounted on the metal body 3 via the bonding material 2. Next, in the wiring process, the main surface opposite to the metal body 3 of the power semiconductor element 1 is electrically connected to one end of the metal lead 6 b directly by the bonding material 4 or one end of the metal lead 6 a via the bonding wire 5. Are connected to form the mounting body 7. As a method for connecting the bonding wires 5, a known wire bonding process such as gold (Au) or copper (Cu) ball bonding can be used in addition to aluminum stitch bonding.
実装体７形成後に、親水化工程において、パワー半導体素子１の表面を親水化し、カップリング工程において、親水化処理したパワー半導体素子１表面にカップリング剤９を塗布する。次に、乾燥工程において、カップリング処理した実装体７を乾燥させる。その後、樹脂封止工程において、トランスファモールドや液状注型などのモールド工法によって、実装体７をモールド樹脂８で覆う。つまり、実装体７は本実施の形態のパワー半導体装置１０において、カップリング剤９を介してモールド樹脂８の内部に封止される。そして、キュア工程において、モールド樹脂８を硬化してパワー半導体装置１０を得る。なお、金属製リード６ａ，６ｂの他端はモールド樹脂８から外部へ突出しており、パワー半導体装置１０を外部と電気的に接続できるようになっている。 After the mounting body 7 is formed, the surface of the power semiconductor element 1 is hydrophilized in the hydrophilization process, and the coupling agent 9 is applied to the surface of the power semiconductor element 1 subjected to the hydrophilization treatment in the coupling process. Next, in the drying process, the mounted body 7 subjected to the coupling process is dried. Thereafter, in the resin sealing step, the mounting body 7 is covered with the mold resin 8 by a molding method such as transfer molding or liquid casting. That is, the mounting body 7 is sealed inside the mold resin 8 via the coupling agent 9 in the power semiconductor device 10 of the present embodiment. In the curing step, the mold resin 8 is cured to obtain the power semiconductor device 10. The other ends of the metal leads 6a and 6b protrude from the mold resin 8 to the outside so that the power semiconductor device 10 can be electrically connected to the outside.
パワー半導体素子１の表面を親水化する方法として、アルカリ溶液処理、熱(火炎)処理、フッ素化処理、紫外線照射、電子線照射、低圧プラズマ、常圧プラズマ、コロナ放電、ブラスト、スパッタ成膜などが挙げられる。処理は単一であっても、２種類以上を複合したものであってもよく、処理後にオゾン、水系溶媒、水蒸気、水素など親水基を導入しやすい雰囲気に晒してもよい。 As a method for hydrophilizing the surface of the power semiconductor element 1, alkaline solution treatment, heat (flame) treatment, fluorination treatment, ultraviolet irradiation, electron beam irradiation, low pressure plasma, atmospheric pressure plasma, corona discharge, blasting, sputtering film formation, etc. Is mentioned. The treatment may be a single treatment or a combination of two or more treatments, and may be exposed to an atmosphere in which hydrophilic groups such as ozone, aqueous solvent, water vapor, and hydrogen are easily introduced after the treatment.
また、カップリング剤９としては、シリコーン系カップリング剤のほかアルミ系、チタン系など一分子中に第一の反応基として加水分解により無機物と結合する部位と第二の反応基として有機官能基とを併せもつ化合物が利用でき、モールド樹脂８に応じて有機官能基を自由に選択できる。このカップリング剤を予め、水やアルコールなどからなる水系溶媒中で加水分解させた水溶液を塗布、スプレー、浸漬により、実装体７表面に付着させ、乾燥することで、実装体７表面に定着させることができる。カップリング剤中には、無機材料に結合する第一の反応基と有機材料に結合する第二の反応基があり、第一の反応基が化合物半導体表面と第二の反応基が封止樹脂と結合することで、それぞれの界面での密着性を向上させることができる。さらに、本発明のようにパワー半導体素子１の表面に親水化処理を施すことにより、親水性となった化合物半導体素子表面と無機材料に結合する第一の反応基との反応が生じやすくなり、その結果、密着性を大幅に向上させることができる。 In addition to the silicone coupling agent, the coupling agent 9 includes an aluminum functional group, a titanium functional group, etc. as a first reactive group in one molecule, such as aluminum and titanium, and an organic functional group as the second reactive group. And an organic functional group can be freely selected according to the mold resin 8. An aqueous solution obtained by previously hydrolyzing this coupling agent in an aqueous solvent such as water or alcohol is applied, sprayed, or dipped to adhere to the surface of the mounting body 7 and dried to fix it on the surface of the mounting body 7. be able to. In the coupling agent, there are a first reactive group that bonds to the inorganic material and a second reactive group that bonds to the organic material. The first reactive group is the compound semiconductor surface and the second reactive group is the sealing resin. Bonding with can improve the adhesion at each interface. Furthermore, by applying a hydrophilic treatment to the surface of the power semiconductor element 1 as in the present invention, a reaction between the surface of the compound semiconductor element that has become hydrophilic and the first reactive group bonded to the inorganic material is likely to occur. As a result, the adhesion can be greatly improved.
以下、本実施の形態によるパワー半導体装置において、パワー半導体素子１の表面とモールド樹脂８とのモールド樹脂密着強度の測定結果を説明し、パワー半導体素子１の表面とモールド樹脂８との密着性向上の効果を明らかにする。図３に、表面処理条件別に測定したパワー半導体素子１とモールド樹脂８との常温における密着強度の測定結果を示す。図３において、横軸は表面処理条件で、縦軸はモールド樹脂密着強度（単位％）である。ここで、モールド樹脂密着強度は未処理の場合の値を１００％としたときの相対値を用いている。 Hereinafter, in the power semiconductor device according to the present embodiment, the measurement result of the mold resin adhesion strength between the surface of the power semiconductor element 1 and the mold resin 8 will be described, and the adhesion between the surface of the power semiconductor element 1 and the mold resin 8 will be improved. To clarify the effect of FIG. 3 shows the measurement results of the adhesion strength at normal temperature between the power semiconductor element 1 and the mold resin 8 measured according to the surface treatment conditions. In FIG. 3, the horizontal axis represents the surface treatment conditions, and the vertical axis represents the mold resin adhesion strength (unit%). Here, the mold resin adhesion strength uses a relative value when the value of the untreated case is 100%.
表面処理条件は、パワー半導体素子１として炭化ケイ素（ＳｉＣ）素子の表面に、（ａ）表面処理をしない場合である未処理、（ｂ）親水化処理のみした場合、（ｃ）カップリング処理のみした場合、（ｄ）親水化処理後にカップリング処理した場合の４条件である。親水化処理条件は、実装体７の素子表面に大気中で低圧水銀ランプ（波長２５４、１８５ｎｍ）を１０分間照射した。カップリング処理は、信越シリコーン（株）社製シランカップリング剤ＫＢＥ６０３（Ｎ−２−アミノエチル−３−アミノプロピルトリメトキシシラン）を０．５ｗｔ％酢酸水溶液に１．０ｗｔ％滴下し、よく攪拌した処理液中に実装体７を浸漬し、引き上げた実装体７表面からエアブローで過剰な処理液を除去し、１１０℃のオーブン中で５分間乾燥した。モールド樹脂は日立化成工業（株）製ＣＥＬ−４６５０を用いた。 The surface treatment conditions are as follows: (a) untreated when the surface treatment is not performed on the surface of the silicon carbide (SiC) element as the power semiconductor element 1, (b) when only the hydrophilization treatment is performed, and (c) only the coupling treatment. In this case, (d) four conditions are obtained when the coupling treatment is performed after the hydrophilic treatment. As the hydrophilization treatment conditions, the element surface of the mounting body 7 was irradiated with a low-pressure mercury lamp (wavelength 254, 185 nm) for 10 minutes in the air. The coupling treatment was performed by adding 1.0 wt% of a silane coupling agent KBE603 (N-2-aminoethyl-3-aminopropyltrimethoxysilane) manufactured by Shin-Etsu Silicone Co., Ltd. to a 0.5 wt% acetic acid aqueous solution and stirring well. The mounting body 7 was immersed in the processed liquid, and the excess processing liquid was removed from the surface of the pulled-up mounting body 7 by air blowing, and dried in an oven at 110 ° C. for 5 minutes. Hitachi Chemical Co., Ltd. CEL-4650 was used as the mold resin.
密着力評価は、素子表面に直径３ｍｍのプリンカップ形状に、トランスファモールド装置で成形したものを、プッシュプルテスタ（アイコーエンジニアリング株式会社製ＲＸ−２０）を用いて１ｍｍ/ｓｅｃの定速で横荷重をかけ、せん断破壊したときの強度を測定した。 For evaluation of adhesion force, a 3 mm diameter pudding cup shape formed on the surface of the element using a transfer mold device was used, and a lateral load was applied at a constant speed of 1 mm / sec using a push-pull tester (RX-20 manufactured by Aiko Engineering Co., Ltd.). And the strength when sheared was measured.
図３より、（ｂ）親水化処理のみ、（ｃ）カップリング処理のみの場合の条件では、（ａ）未処理の場合に比べて、ほとんど密着力に変化が見られないのに対して、（ｄ）親水化処理後にカップリング処理することで密着力が（ａ）未処理の場合に対して約３倍となる効果が得られた。 From FIG. 3, (b) only the hydrophilization treatment, (c) in the case of only the coupling treatment, compared with (a) untreated, almost no change in the adhesion force, (D) By performing the coupling treatment after the hydrophilization treatment, an effect that the adhesion force is about three times that of the case of (a) untreated is obtained.
以上のように、カップリング処理を実施する前に、パワー半導体素子１の表面を親水化処理により親水性にすることで、パワー半導体素子１とモールド樹脂８との密着性にすぐれた信頼性の高い半導体装置を得ることができる。このため、高温動作時においても、パワー半導体素子とモールド樹脂との密着性を向上させることが可能となる。また、電気的絶縁信頼性を向上させることができる。 As described above, the surface of the power semiconductor element 1 is made hydrophilic by the hydrophilic treatment before the coupling process is performed, so that the adhesion between the power semiconductor element 1 and the mold resin 8 is excellent. A high semiconductor device can be obtained. For this reason, it is possible to improve the adhesion between the power semiconductor element and the mold resin even during high temperature operation. Moreover, electrical insulation reliability can be improved.
実施の形態２．
図４は、本発明の実施の形態２におけるパワー半導体装置の断面概略図である。図４に示すように、実装体７形成前に、パワー半導体素子１をダイシングテープに貼り付けたまま、予め親水化処理およびカップリング処理を行った点が実施の形態１と異なる。
Embodiment 2. FIG.
FIG. 4 is a schematic cross-sectional view of the power semiconductor device according to the second embodiment of the present invention. As shown in FIG. 4, the present embodiment is different from the first embodiment in that before the mounting body 7 is formed, the hydrophilic treatment and the coupling treatment are performed in advance while the power semiconductor element 1 is attached to the dicing tape.
図５は、本実施の形態におけるパワー半導体装置の製造工程を示すフロー図である。まず始めに、ダイシング工程において、多数のパワー半導体素子１が形成されたウエハをダイシングテープに固着し、ダイシングして個片化する。次に、ダイシング処理で個片化したものを、ダイシングテープに貼り付けたまま、親水化工程において、パワー半導体素子１の表面を親水化処理により親水化する。次に、カップリング工程において、親水化処理したパワー半導体素子１表面にカップリング剤９を塗布する。次に、乾燥工程において、ダイシングテープに貼り付けたままカップリング処理したパワー半導体素子１を乾燥させる。次に、ピックアップ工程において、乾燥したパワー半導体素子１をピックアップする。次に、ダイボンド工程において、ピックアップしたパワー半導体素子１は接合材２を介して金属体３に搭載する。次に、配線工程において、パワー半導体素子１の金属体３と逆側の主面を、接合材４により直接金属リード６ｂの一端と、あるいはボンディングワイヤ５を介して金属製リード６ａの一端と電気的に接続して実装体７を形成する。ボンディングワイヤ５の接続方法としては、アルミのスティッチボンドのほか、金（Ａｕ）や銅（Ｃｕ）のボールボンディングなどの公知のワイヤボンディング工程が利用できる。 FIG. 5 is a flowchart showing a manufacturing process of the power semiconductor device in the present embodiment. First, in a dicing process, a wafer on which a large number of power semiconductor elements 1 are formed is fixed to a dicing tape and diced into individual pieces. Next, the surface of the power semiconductor element 1 is hydrophilized by a hydrophilization process in the hydrophilization process while the pieces separated by the dicing process are attached to the dicing tape. Next, in the coupling step, the coupling agent 9 is applied to the surface of the power semiconductor element 1 subjected to the hydrophilic treatment. Next, in the drying step, the power semiconductor element 1 subjected to the coupling process while being attached to the dicing tape is dried. Next, in the pickup step, the dried power semiconductor element 1 is picked up. Next, in the die bonding process, the picked-up power semiconductor element 1 is mounted on the metal body 3 via the bonding material 2. Next, in the wiring process, the main surface opposite to the metal body 3 of the power semiconductor element 1 is electrically connected to one end of the metal lead 6 b directly by the bonding material 4 or one end of the metal lead 6 a via the bonding wire 5. Are connected to form the mounting body 7. As a method for connecting the bonding wires 5, a known wire bonding process such as gold (Au) or copper (Cu) ball bonding can be used in addition to aluminum stitch bonding.
実装体７形成後に、樹脂封止工程において、トランスファモールドや液状注型などのモールド工法によって、実装体７をモールド樹脂８で覆う。つまり、実装体７は本実施の形態のパワー半導体装置１０において、カップリング剤９を介してモールド樹脂８の内部に封止される。キュア工程において、モールド樹脂８を硬化してパワー半導体装置１０を得る。なお、金属製リード６ａ，６ｂの他端はモールド樹脂８から外部へ突出しており、パワー半導体装置１０を外部と電気的に接続できるようになっている。このように、パワー半導体素子１をダイシングテープに貼り付けたまま、親水化処理およびカップリング処理を行った点が実施の形態１と異なる。親水化およびカップリング処理の条件は実施の形態１と同様の方法で行い、カップリング剤は信越シリコーン（株）社製シランカップリング剤ＫＢＭ３０３（２−（３，４−エポキシシクロヘキシル）エチルトリメトキシシラン)を用いた。 After the mounting body 7 is formed, the mounting body 7 is covered with a mold resin 8 by a molding method such as transfer molding or liquid casting in a resin sealing process. That is, the mounting body 7 is sealed inside the mold resin 8 via the coupling agent 9 in the power semiconductor device 10 of the present embodiment. In the curing step, the mold resin 8 is cured to obtain the power semiconductor device 10. The other ends of the metal leads 6a and 6b protrude from the mold resin 8 to the outside so that the power semiconductor device 10 can be electrically connected to the outside. Thus, the point which performed the hydrophilization process and the coupling process with the power semiconductor element 1 affixed on the dicing tape differs from Embodiment 1. FIG. The conditions for hydrophilization and coupling treatment were performed in the same manner as in Embodiment 1, and the coupling agent was a silane coupling agent KBM303 (2- (3,4-epoxycyclohexyl) ethyltrimethoxy manufactured by Shin-Etsu Silicone Co., Ltd.). Silane) was used.
以上のように、カップリング処理を実施する前に、パワー半導体素子１表面を親水化処理により親水性にすることで、パワー半導体素子１とモールド樹脂８との密着性にすぐれた信頼性の高い半導体装置を得ることができる。また、予めパワー半導体素子１に対してカップリング処理を行うことで、使用するカップリング剤をパワー半導体素子１用に調整することも可能となり、モールド樹脂８との密着性をより強化することが可能となる。さらに、パワー半導体素子１に対してのみ、カップリング処理を行うことで、カップリング剤の使用量の削減もできる。 As described above, the surface of the power semiconductor element 1 is made hydrophilic by the hydrophilic treatment before the coupling process is performed, so that the adhesion between the power semiconductor element 1 and the mold resin 8 is excellent and highly reliable. A semiconductor device can be obtained. In addition, by performing a coupling process on the power semiconductor element 1 in advance, it becomes possible to adjust the coupling agent to be used for the power semiconductor element 1 and to further enhance the adhesion with the mold resin 8. It becomes possible. Furthermore, the amount of coupling agent used can be reduced by performing the coupling process only on the power semiconductor element 1.
実施の形態３．
本実施の形態３におけるパワー半導体装置の断面概略図は図４に示したものと同じである。ただし、ここでは、カップリング剤として、シランカップリング剤ＫＢＭ３０３原液を、親水化したパワー半導体素子１側面に選択的に付着させ、３００℃以上で硬化させてシロキサン膜とした。このように、カップリング剤として、シランカップリング剤ＫＢＭ３０３０原液を用いカップリング処理後に３００℃以上の熱処理を実施し、カップリング剤をシロキサン膜としたところが実施の形態１と異なる。
Embodiment 3 FIG.
The cross-sectional schematic diagram of the power semiconductor device in the third embodiment is the same as that shown in FIG. However, here, as a coupling agent, a silane coupling agent KBM303 stock solution was selectively attached to the side surface of the hydrophilic power semiconductor element 1 and cured at 300 ° C. or higher to form a siloxane film. Thus, the difference from Embodiment 1 is that the silane coupling agent KBM3030 stock solution is used as the coupling agent and the heat treatment at 300 ° C. or higher is performed after the coupling treatment, and the coupling agent is a siloxane film.
以上のように、カップリング処理を実施する前に、パワー半導体素子１の表面を親水化処理により親水性にすることで、パワー半導体素子１とモールド樹脂８との密着性にすぐれた信頼性の高い半導体装置を得ることができる。また、カップリング処理後熱処理を行うことでカップリング処理後の効果持続時間が実施の形態２に比べて２倍に延長することができ、プロセス管理時間のマージンが拡がり生産性に優れる。 As described above, the surface of the power semiconductor element 1 is made hydrophilic by the hydrophilic treatment before the coupling process is performed, so that the adhesion between the power semiconductor element 1 and the mold resin 8 is excellent. A high semiconductor device can be obtained. Further, by performing the heat treatment after the coupling treatment, the effect duration after the coupling treatment can be extended twice as compared with the second embodiment, the margin of the process management time is widened, and the productivity is excellent.
実施の形態４．
図６は、本実施の形態によるパワー半導体装置の断面概略図である。図６に示すように、カップリング剤９を予め添加したモールド樹脂１１を用いて、パワー半導体素子１の表面を親水化した実装体７を封止する。このようにして、パワー半導体装置２０が形成される。
Embodiment 4 FIG.
FIG. 6 is a schematic cross-sectional view of the power semiconductor device according to the present embodiment. As shown in FIG. 6, the mounting body 7 in which the surface of the power semiconductor element 1 is hydrophilized is sealed using a mold resin 11 to which a coupling agent 9 has been added in advance. In this way, the power semiconductor device 20 is formed.
図７は、本実施の形態によるパワー半導体装置の製造工程を示すフロー図である。図７に示すように、カップリング剤をモールド樹脂１１中に添加することで、カップリング処理工程を省略できることが実施の形態１と異なる。 FIG. 7 is a flowchart showing manufacturing steps of the power semiconductor device according to the present embodiment. As shown in FIG. 7, it is different from Embodiment 1 that the coupling treatment step can be omitted by adding a coupling agent into the mold resin 11.
以上のように、カップリング剤９をモールド樹脂８中に添加したモールド樹脂１１を用いることで、カップリング処理を省略することが可能で、実施の形態１と同様に密着力を向上することが可能である。また、カップリング処理を実施する前に、パワー半導体素子１表面を親水化処理により親水性にすることで、パワー半導体素子１とモールド樹脂１１との密着性にすぐれた信頼性の高い半導体装置を得ることができる。 As described above, by using the mold resin 11 in which the coupling agent 9 is added to the mold resin 8, the coupling process can be omitted, and the adhesion can be improved as in the first embodiment. Is possible. In addition, a highly reliable semiconductor device having excellent adhesion between the power semiconductor element 1 and the mold resin 11 is obtained by making the surface of the power semiconductor element 1 hydrophilic by performing a hydrophilic treatment before the coupling process. Can be obtained.
１ パワー半導体素子、２，４ 接合材、３ 金属体、５ ボンディングワイヤ、６ａ，６ｂ 金属製リード、７ 実装体、８ モールド樹脂、９ カップリング剤、１０，２０ パワー半導体装置、１１ カップリング剤を添加したモールド樹脂。 DESCRIPTION OF SYMBOLS 1 Power semiconductor element, 2, 4 Bonding material, 3 Metal body, 5 Bonding wire, 6a, 6b Metal lead, 7 Mounting body, 8 Mold resin, 9 Coupling agent, 10, 20 Power semiconductor device, 11 Coupling agent Mold resin added.
Claims (8)
前記半導体素子の表面が親水性であり、前記半導体素子と前記封止樹脂との界面に、無機材料に結合する第一の反応基と有機材料に結合する第二の反応基とを有するカップリング剤が介在することを特徴とする半導体装置。 A semiconductor device formed by sealing a mounting body in which a semiconductor element is mounted on a metal member with a sealing resin,
A coupling in which the surface of the semiconductor element is hydrophilic and has a first reactive group bonded to an inorganic material and a second reactive group bonded to an organic material at an interface between the semiconductor element and the sealing resin. A semiconductor device comprising an agent.
前記半導体素子の表面が親水性であり、前記封止樹脂には、無機材料に結合する第一の反応基と有機材料に結合する第二の反応基とを有するカップリング剤を添加されることを特徴とする半導体装置。 A semiconductor device formed by sealing a mounting body in which a semiconductor element is mounted on a metal member with a sealing resin,
The surface of the semiconductor element is hydrophilic, and a coupling agent having a first reactive group bonded to an inorganic material and a second reactive group bonded to an organic material is added to the sealing resin. A semiconductor device characterized by the above.
前記半導体素子の表面を親水化する工程と、
前記親水化した表面に、無機材料に結合する第一の反応基と有機材料に結合する第二の反応基とを有するカップリング剤を塗布する工程と、
前記カップリング剤塗布後に、前記半導体素子を前記封止樹脂によって封止する工程とを備えることを特徴とする半導体素子の製造方法。 A manufacturing method of a semiconductor device formed by sealing a mounting body in which a semiconductor element is mounted on a metal member with a sealing resin,
Hydrophilizing the surface of the semiconductor element;
Applying a coupling agent having a first reactive group bonded to an inorganic material and a second reactive group bonded to an organic material to the hydrophilic surface;
And a step of sealing the semiconductor element with the sealing resin after applying the coupling agent.
前記半導体素子の表面を親水化する工程と、
前記半導体素子を、無機材料に結合する第一の反応基と有機材料に結合する第二の反応基とを有するカップリング剤を添加した前記封止樹脂によって封止する工程とを備えることを特徴とする半導体素子の製造方法。 A manufacturing method of a semiconductor device formed by sealing a mounting body in which a semiconductor element is mounted on a metal member with a sealing resin,
Hydrophilizing the surface of the semiconductor element;
Sealing the semiconductor element with the sealing resin to which a coupling agent having a first reactive group bonded to an inorganic material and a second reactive group bonded to an organic material is added. A method for manufacturing a semiconductor device.
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| EP4293715A1 (en) * | 2022-06-15 | 2023-12-20 | Nexperia B.V. | A method for manufacturing a semiconductor package assembly as well as such semiconductor package assembly |
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