JP2018037637A - Semiconductor device and semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve manufacturing efficiency of a semiconductor device.SOLUTION: A semiconductor device of one embodiment comprises a conductive part, an insulation layer, a molecular junction layer and a metallic plating layer. The insulation layer has an exposure part for exposing at least a part of the conductive part. The molecular junction layer is provided at least on a surface of the insulation layer. The metallic plating layer is joined to a surface of the insulation layer by the molecular junction layer. At least a part of the molecular junction layer is chemically bonded with an insulating material included in the insulation layer. At least the part of the molecular junction layer is chemically bonded with metal included in the metallic plating layer. The metallic plating layer is electrically connected with the conductive part through the exposure part.SELECTED DRAWING: Figure 1

Description

Embodiments described herein relate generally to a semiconductor device and a method for manufacturing the semiconductor device.

  A semiconductor device including a conductive portion, an insulating layer, and a metal plating layer is known.

JP 2016-1111026 A

The problem to be solved by the present invention is to improve the production efficiency of a semiconductor device.

  The semiconductor device according to the embodiment includes a conductive portion, an insulating layer, a molecular bonding layer, and a metal plating layer. The insulating layer has an exposed portion that exposes at least a part of the conductive portion. The molecular bonding layer is provided at least on the surface of the insulating layer. The metal plating layer is bonded to the surface of the insulating layer by the molecular bonding layer. At least a part of the molecular bonding layer is chemically bonded to an insulating material included in the insulating layer. At least a part of the molecular bonding layer is chemically bonded to the metal contained in the metal plating layer. The metal plating layer is electrically connected to the conductive portion through the exposed portion.

FIG. 3 is a perspective view illustrating an example of an electronic apparatus according to the first embodiment. Sectional drawing which shows the semiconductor package of 1st Embodiment. The figure which shows typically an example of a composition of the molecular junction layer of 1st Embodiment. Sectional drawing which shows an example of the flow of the manufacturing method of the semiconductor package of 1st Embodiment. Sectional drawing which shows an example of the flow of the manufacturing method of the semiconductor package following FIG. Sectional drawing which shows a part of semiconductor package of the modification of 1st Embodiment. Sectional drawing which shows the semiconductor package of 2nd Embodiment. Sectional drawing which expands and shows the circumference | surroundings of the 3rd molecular junction layer of 2nd Embodiment. Sectional drawing which shows 1 process of the manufacturing method of the semiconductor package of 2nd Embodiment. FIG. 10 is a cross-sectional view showing a step of the semiconductor package manufacturing method following FIG. 9; FIG. 11 is a cross-sectional view showing a step of the semiconductor package manufacturing method following FIG. 10; FIG. 12 is a cross-sectional view showing a step of the semiconductor package manufacturing method following FIG. 11. FIG. 13 is a cross-sectional view showing a step of the semiconductor package manufacturing method following FIG. 12; FIG. 14 is a cross-sectional view showing a step of the semiconductor package manufacturing method following FIG. 13. FIG. 15 is a cross-sectional view showing a step of the semiconductor package manufacturing method following FIG. 14; FIG. 16 is a cross-sectional view showing a step of the semiconductor package manufacturing method following FIG. 15; FIG. 17 is a cross-sectional view showing a step of the semiconductor package manufacturing method following FIG. 16; FIG. 18 is a cross-sectional view showing a step of the semiconductor package manufacturing method following FIG. 17; Sectional drawing which shows the semiconductor package of 4th Embodiment. Sectional drawing which shows 1 process of the manufacturing method of the semiconductor package of 4th Embodiment. FIG. 21 is a cross-sectional view showing a step of the semiconductor package manufacturing method following FIG. 20; FIG. 22 is a cross-sectional view showing a step of the semiconductor package manufacturing method following FIG. 21; FIG. 23 is a cross-sectional view showing a step of the semiconductor package manufacturing method following FIG. 22; FIG. 24 is a cross-sectional view showing a step of the semiconductor package manufacturing method following FIG. 23; FIG. 25 is a cross-sectional view showing a step of the semiconductor package manufacturing method following FIG. 24; FIG. 26 is a cross-sectional view showing a step of the semiconductor package manufacturing method following FIG. 25;

  Hereinafter, a semiconductor package and a method for manufacturing the semiconductor package of the embodiment will be described with reference to the drawings. In the following description, the same reference numerals are given to configurations having the same or similar functions. And those overlapping descriptions may be omitted. The drawings are schematic, and the number, thickness, width, ratio, and the like of each component may be different from actual ones.

(First embodiment)
First, the first embodiment will be described with reference to FIGS.

  FIG. 1 is a perspective view illustrating an example of an electronic apparatus 1 according to the first embodiment. The electronic device 1 includes the semiconductor package 10 according to the first embodiment. The electronic device 1 is, for example, a wearable device, but is not limited to this. The electronic device 1 is, for example, an electronic device compatible with IOT (Internet Of Things), and can be connected to the Internet wirelessly or by wire. In this case, an example of the semiconductor package 10 includes a processor (for example, Central Processing Unit), a sensor, and a wireless module. The electronic device 1 and the semiconductor package 10 are not limited to the above example. The electronic device 1 may be an in-vehicle electronic device or an electronic device for other purposes. The semiconductor package 10 may be a vehicle component, a semiconductor component used as a power semiconductor, or a semiconductor component used for other purposes. Moreover, the semiconductor package 10 according to the second to fourth embodiments described below may be mounted on the electronic device 1 as described above.

  FIG. 2 is a cross-sectional view showing the semiconductor package 10 of the first embodiment.

  The semiconductor package 10 of this embodiment is, for example, a Fan Out Wafer Level Package (FOWLP). As will be described in detail later, the semiconductor package 10 includes a semiconductor chip 20 and a redistribution layer 50 larger than the semiconductor chip 20. The “redistribution layer” referred to in the present application is a layer that includes a conductive wire (for example, redistribution) that is electrically connected to a terminal (for example, a conductive pad) of the semiconductor chip and extends to the outer peripheral side of the semiconductor chip. The semiconductor package 10 is not limited to FOWLP, and may be a wafer level chip size package (WLCSP) or other types of semiconductor packages. The semiconductor package 10 is an example of a “semiconductor device”.

  As shown in FIG. 2, the semiconductor package 10 includes, for example, a first semiconductor chip 20A, a second semiconductor chip 20B, a third semiconductor chip 20C, a mold resin portion 30, a lower insulating layer 40, a first redistribution layer 50, a molecule. A bonding layer 60, an upper insulating layer 70, a second rewiring layer 80, and a solder connection portion 90 are provided. In the present application, “upper” and “lower” are based on the manufacturing process of the semiconductor package 10. However, these modifiers such as “upper” and “lower” are given for convenience of explanation, and do not limit the position, function, and configuration of the insulating layers 40 and 70.

  The first semiconductor chip 20A, the second semiconductor chip 20B, and the third semiconductor chip 20C are members made of a semiconductor containing silicon, for example, and are, for example, bare chips. An example of each of the first to third semiconductor chips 20A, 20B, and 20C may be referred to as a “silicon chip”. The first to third semiconductor chips 20A, 20B, and 20C are, for example, HFET (Heterojunction F or ld Effect Transistor) made of GaN or SiC, or LDMOS (Lateral Double Diffuse MOS Transistor) made of Si. It is. Other examples of the semiconductor chips 20A, 20B, and 20C include an optical semiconductor element, a piezoelectric element, a memory element, a microcomputer element, a sensor element, and a wireless communication element. The “semiconductor chip” referred to in the present application may be a component including an electric circuit, and is not limited to a semiconductor chip for a specific application.

  For example, the first semiconductor chip 20A is a processor (for example, Central Processing Unit). For example, the second semiconductor chip 20B is a sensor that detects at least one of acceleration, inclination, geomagnetism, temperature, vibration, and other physical quantities. For example, the third semiconductor chip 20C is a wireless communication module. The first semiconductor chip 20A wirelessly transmits the detection result detected by the second semiconductor chip 20B to the outside of the semiconductor chip 20 by the third semiconductor chip 20C by controlling the second semiconductor chip 20B and the third semiconductor chip 20C. To do. The functions of the first to third semiconductor chips 20A, 20B, and 20C are not limited to the above example. Further, the semiconductor package 10 is not limited to a semiconductor package having a plurality of semiconductor chips, and may have at least one semiconductor chip. In the following description, the first to third semiconductor chips 20A, 20B, and 20C are referred to as a semiconductor chip 20 unless otherwise distinguished.

  As shown in FIG. 2, the semiconductor chip 20 has a plurality of conductive pads (connection portions, electrical connection portions) 21. The conductive pad 21 is an example of a “terminal”. The plurality of conductive pads 21 are exposed on the surface of the semiconductor chip 20. Although not shown in FIG. 2, the second and third semiconductor chips 20B and 20C also have a plurality of conductive pads 21 similarly to the first semiconductor chip 20A. The conductive pad 21 is formed of a metal (that is, a metal material) 21m. The metal 21m is, for example, copper, a copper alloy, aluminum, an aluminum alloy (for example, an aluminum-silicon alloy), or the like, but is not limited thereto.

  The mold resin part (that is, the insulating part) 30 covers the first to third semiconductor chips 20A, 20B, and 20C. The mold resin part 30 integrally seals the first to third semiconductor chips 20A, 20B, and 20C. The mold resin portion 30 is provided on the first portion (that is, the first region) 31 facing the semiconductor chip 20 and on the outer peripheral side of the semiconductor chip 20 (for example, on the outer peripheral side of the first to third semiconductor chips 20A, 20B, and 20C). And a second portion (i.e., second region) 32 provided.

  The lower insulating layer 40 is laminated on the semiconductor chip 20 and the mold resin portion 30. The lower insulating layer 40 has a first portion (ie, a first region) 41 and a second portion (ie, a second region) 42. The first portion 41 is provided between the semiconductor chip 20 and the first redistribution layer 50. The first portion 41 overlaps the semiconductor chip 20 in the thickness direction of the lower insulating layer 40 (that is, the stacking direction of the lower insulating layer 40 with respect to the semiconductor chip 20). On the other hand, the second portion 42 is provided between the second portion 32 of the mold resin portion 30 and the first rewiring layer 50. The second portion 42 overlaps the second portion 32 of the mold resin portion 30 in the thickness direction of the lower insulating layer 40. The lower insulating layer 40 is formed of an insulating material 40m. The insulating material 40m is, for example, an acrylic resin, an oxetane resin, an epoxy resin, a polyimide resin, or a polybenzoxazole resin, but is not limited thereto. The lower insulating layer 40 may be referred to as a “base insulating layer”. However, this name does not limit the position, function, or configuration of the lower insulating layer 40.

  The first rewiring layer 50 is provided on the surface of the lower insulating layer 40. The first redistribution layer 50 is provided between the lower insulating layer 40 and the upper insulating layer 70. The first redistribution layer 50 is a layer that includes a plurality of conductive wires 51 that are electrically connected to the conductive pads 21 of the semiconductor chip 20. Electronic signals from the semiconductor chip 20 flow through the plurality of conductive wires 51. The “electric signal of the semiconductor chip” referred to in the present application means an electric signal from the semiconductor chip 20 (for example, an electric signal sent from the semiconductor chip 20) and an electric signal to the semiconductor chip 20 (for example, an electric signal received by the semiconductor chip 20). ). The conducting wire 51 is an example of a “first conducting wire (for example, a first rewiring)”. For example, the plurality of conductive wires 51 extend across the first portion 41 and the second portion 42 of the lower insulating layer 40.

  The first redistribution layer 50 includes a first via 52 and a via receiving portion (that is, a via connection portion) 53 in addition to the conductive wire 51. The first via 52 is, for example, a bottomed via. The first via 52 is physically and electrically connected to at least one conductive wire 51. The first via 52 has a recess 52 a that is recessed in the lower insulating layer 40. The first via 52 extends from the conductive wire 51 toward the semiconductor chip 20 (that is, extends toward the mold resin portion 30) and penetrates the lower insulating layer 40. The first via 52 is physically and electrically connected to the conductive pad 21 of the semiconductor chip 20. Thereby, the conducting wire 51 is electrically connected to the conductive pad 21 of the semiconductor chip 20 through the first via 52. A part of the upper insulating layer 70 described later is accommodated inside the recess 52 a of the first via 52.

  The via receiving portion 53 is a portion in the first redistribution layer 50 to which a second via 82 of the second redistribution layer 80 described later is connected. The via receiving portion 53 faces the second via 82 in the thickness direction of the upper insulating layer 70 (that is, the stacking direction of the upper insulating layer 70 with respect to the first redistribution layer 50), and physically and electrically contacts the second via 82. It is connected to the. The via receiving portion 53 is an example of a “conductor portion”. The via receiving portion 53 is physically and electrically connected to at least one conductive wire 51.

  From another point of view, the first redistribution layer 50 is a layer provided as an electric signal conducting wire of the semiconductor chip 20 with respect to the semiconductor chip 20. The first redistribution layer 50 is formed of a conductive material (for example, conductive metal) 50m. The conductive material 50m is, for example, Au, Ni, Cu, Pt, Sn, or Pd, but is not limited thereto. In the present embodiment, the conductive material 50m is Cu. The conductive material 50m is an example of a “first conductive material”. The first rewiring layer 50 is formed by plating, for example. The conductive material 50m may be the same as or different from the conductive material 21m forming the conductive pad 21.

  The molecular bonding layer 60 is provided on at least a part of the surface of the first rewiring layer 50. In the present embodiment, the molecular bonding layer 60 is provided on substantially the entire surface of the first rewiring layer 50. The molecular bonding layer 60 is an example of a “first molecular bonding layer”. The molecular bonding layer 60 will be described later in detail.

  The upper insulating layer 70 is provided on the side opposite to the lower insulating layer 40 with respect to the first redistribution layer 50. The upper insulating layer 70 is an example of a “first insulating layer”. The upper insulating layer 70 covers at least a part of the molecular bonding layer 60. In the present embodiment, the upper insulating layer 70 covers substantially the entire molecular bonding layer 60. The upper insulating layer 70 includes a first portion (that is, a first region) 71 that overlaps the first portion 41 of the lower insulating layer 40 and a second portion (that is, a second region) 72 that overlaps the second portion 42 of the lower insulating layer 40. And have. The upper insulating layer 70 is formed of an insulating material 70m. The insulating material 70m is, for example, an acrylic resin, an oxetane resin, an epoxy resin, a polyimide resin, or a polybenzoxazole resin, but is not limited thereto. The insulating material 70m is an example of a “first insulating material”. The insulating material 70m may be the same as or different from the insulating material 40m forming the lower insulating layer 40.

  The second rewiring layer 80 is provided on the surface of the upper insulating layer 70. The second rewiring layer 80 is provided on the side opposite to the first rewiring layer 50 with respect to the upper insulating layer 70. The second redistribution layer 80 is electrically connected to the conducting wire 51 of the first redistribution layer 50. In the present embodiment, the second redistribution layer 80 includes a terminal portion 81 provided on the outer surface of the semiconductor package 10. The terminal part 81 includes a second via 82. The second via 82 is, for example, a bottomed via. The second via 82 has a recess 82 a that is recessed in the upper insulating layer 70. The second via 82 extends toward the first redistribution layer 50 and penetrates the upper insulating layer 70. The second via 82 is physically and electrically connected to the via receiving portion 53 of the first rewiring layer 50. Thereby, the second redistribution layer 80 is electrically connected to the conducting wire 51 of the first redistribution layer 50. The second redistribution layer 80 is electrically connected to the conductive pads 21 of the semiconductor chip 20 via the first redistribution layer 50. The second rewiring layer 80 is provided by a conductive material (for example, conductive metal) 80m. The conductive material 80m is, for example, Au, Ni, Cu, Pt, Sn, or Pd, but is not limited thereto. In the present embodiment, the conductive material 80m is Cu. The conductive material 80m is an example of a “second conductive material”. The second rewiring layer 80 is formed by plating, for example. The conductive material 80m may be the same as or different from the conductive material 50m that forms the first redistribution layer 50 and the conductive material 21m that forms the conductive pad 21.

  The solder connection portion 90 is an example of each of “connection portion” and “external connection terminal”. The solder connection unit 90 is a connection unit that physically and electrically connects an external module (for example, a circuit board) and the semiconductor package 10. The solder connection part 90 is provided in the terminal part 81 of the second rewiring layer 80. A part of the solder connection portion 90 is accommodated inside the second via 82 of the terminal portion 81. The solder connection part 90 is, for example, a solder ball or a solder bump. The “connection portion” is not limited to the solder connection portion, and may be a conductive portion formed of a conductive paste or the like, or another type of conductive portion.

  Next, the molecular bonding layer 60 will be described.

  As shown in FIG. 2, the molecular bonding layer 60 is provided between the first rewiring layer 50 and the upper insulating layer 70. The molecular bonding layer 60 is chemically bonded to both the first redistribution layer 50 and the upper insulating layer 70. Thereby, the molecular bonding layer 60 bonds the first rewiring layer 50 and the upper insulating layer 70 together. The molecular bonding layer 60 is actually very thin, but for convenience of explanation, it is shown with a certain thickness in each figure.

  The molecular bonding layer 60 includes a molecular bonding body 60r (see FIG. 3) formed by a molecular bonding agent. The molecular bonding agent is a compound that can form a chemical bond (for example, a covalent bond) with, for example, a resin and a metal. Note that the term “covalent bond” in the present application broadly means a bond having a covalent bond, and includes a coordination bond and a quasicovalent bond. The term “molecular conjugate” as used in the present application refers to a substance that remains at the junction after the chemical bonding (ie, chemical reaction) of the molecular bonding agent.

  Examples of the molecular bonding agent include compounds such as triazine derivatives. Examples of the triazine derivative include compounds represented by the following general formula (C1).

（式中、Ｒは、炭化水素基又は異種原子もしくは官能基が介在してもよい炭化水素基を示し、Ｘは、水素原子又は炭化水素基を示し、Ｙは、アルコキシ基を示し、
Ｚは、塩を形成していてもよい、チオール基、アミノ基もしくはアジド基、又は異種原子もしくは官能基が介在してもよい炭化水素基を示し、ｎ１は１〜３までの整数であり、ｎ２は１〜２までの整数である。）
上記一般式（Ｃ１）において、Ｒは、好ましくは炭素数１〜７の炭化水素基、又はこれらの主鎖に窒素原子が介在するものを示す。Ｘは、炭素数１〜３の炭化水素基を示す。Ｙは、炭素数１〜３のアルコキシ基を示す。ｎ１は、好ましくは３である。ｎ２は、好ましくは２である。Ｚは、好ましくは塩を形成していてもよい、チオール基、アミノ基もしくはアジド基、又はアルキル基を示す。塩を形成するカチオンの元素としては、アルカリ金属が好ましく、中でもＬｉ、Ｎａ、Ｋ又はＣｓがさらに好ましい。なお、ｎ２が２である場合は、少なくとも１つのＺは、塩を形成している、チオール基、アミノ基又はアジド基を示すことが好ましい。 (C1)

(In the formula, R represents a hydrocarbon group or a hydrocarbon group in which a hetero atom or a functional group may intervene, X represents a hydrogen atom or a hydrocarbon group, Y represents an alkoxy group,
Z represents a thiol group, an amino group or an azide group which may form a salt, or a hydrocarbon group which may be intervened by a hetero atom or a functional group, n1 is an integer from 1 to 3, n2 is an integer from 1 to 2. )
In the above general formula (C1), R preferably represents a hydrocarbon group having 1 to 7 carbon atoms, or a group in which a nitrogen atom is interposed in the main chain. X shows a C1-C3 hydrocarbon group. Y shows a C1-C3 alkoxy group. n1 is preferably 3. n2 is preferably 2. Z preferably represents a thiol group, an amino group or an azide group, or an alkyl group, which may form a salt. As an element of the cation forming the salt, an alkali metal is preferable, and Li, Na, K, or Cs is more preferable among them. In addition, when n2 is 2, it is preferable that at least 1 Z shows the thiol group, amino group, or azide group which forms the salt.

  At least a part of the molecular bonding layer 60 (that is, at least a part of the molecular bonding agent forming the molecular bonding layer 60) is chemically bonded (for example, covalently bonded) to the conductive material 50m included in the conductive wire 51 of the first rewiring layer 50. doing. Similarly, at least a part of the molecular bonding layer 60 (that is, at least a part of the molecular bonding agent forming the molecular bonding layer 60) is chemically bonded (for example, covalently bonded) to the insulating material 70m included in the upper insulating layer 70. Yes. Thereby, the molecular bonding layer 60 bonds the conducting wire 51 of the first rewiring layer 50 and the upper insulating layer 70 together.

  The molecular bonding agent is chemically bonded (for example, covalently bonded) to the conductive material 50m of the conductive wire 51 of the first rewiring layer 50 and the insulating material 70m of the upper insulating layer 70, whereby the conductive wire 51 of the first rewiring layer 50 is used. And the upper insulating layer 70 can be bonded with high adhesion. This suppresses the upper insulating layer 70 from being peeled off from the first rewiring layer 50 in, for example, a reflow process for connecting the solder connection portion 90 to the external module.

  FIG. 3 is a diagram schematically illustrating an example of the composition of the molecular bonding layer 60.

  As shown in FIG. 3, the molecular bonding layer 60 includes, for example, a plurality of molecular bonding bodies 60r. The molecular conjugate 60r includes a molecular conjugate residue formed by a chemical reaction of the above-described molecular conjugate with a first member and a second member. For example, the molecular conjugate 60r includes molecular junction residues formed by the chemical reaction of the molecular junction described above with the first rewiring layer 50 and the upper insulating layer 70. The molecular bonding agent residue is, for example, a triazine dithiol residue as shown in FIG. The molecular conjugate 60r may include “S” and “Z” in FIG. An example of “Z” in FIG. 3 is an aminohydrocarbylsiloxy group. For example, at least one molecular bonded body 60 r included in the molecular bonding layer 60 is chemically bonded to both the conductive material 50 m included in the conductive wire 51 of the first redistribution layer 50 and the insulating material 70 m included in the upper insulating layer 70. (For example, covalent bond). In other words, one molecule of molecular bonding agent (for example, molecular bonded body 60 r) included in the molecular bonding layer 60 is composed of the conductive material 50 m included in the conductive wire 51 of the first rewiring layer 50 and the insulating material included in the upper insulating layer 70. It is chemically bonded (for example, covalent bond) to both of 70m.

  As shown in FIG. 2, in the present embodiment, the molecular bonding layer 60 includes a first portion 61, a second portion 62, and a third portion 63. As described above, the first portion 61 is provided between the conducting wire 51 of the first redistribution layer 50 and the upper insulating layer 70, and is provided on both the conducting wire 51 and the upper insulating layer 70 of the first redistribution layer 50. It is chemically bonded (for example, covalent bond). Thereby, the first portion 61 joins the conducting wire 51 of the first redistribution layer 50 and the upper insulating layer 70.

  The second portion 62 is provided inside the recess 52 a of the first via 52. The second portion 62 is provided along the inner surface of the recess 52 a of the first via 52 (that is, the inner surface of the first via 52), and extends in a direction different from the first portion 61. For example, the second portion 62 extends in a direction intersecting with the boundary surface between the semiconductor chip 20 and the lower insulating layer 40. The second portion 62 is provided between the inner surface of the first via 52 and the upper insulating portion 70, and is chemically bonded (for example, covalently bonded) to both the first via 52 and the upper insulating layer 70. More specifically, at least a portion of the second portion 62 (that is, at least a portion of the molecular bonding agent forming the molecular bonding layer 60) is chemically bonded (for example, covalently bonded) to the conductive material 50m included in the first via 52. ing. Similarly, at least a part of the second portion 62 (that is, at least a part of the molecular bonding agent forming the molecular bonding layer 60) is an insulating material 70m included in the upper insulating layer 70 inside the recess 52a of the first via 52. And a chemical bond (for example, a covalent bond). Accordingly, the second portion 62 joins the first via 52 and the upper insulating layer 70 inside the recess 52 a of the first via 52.

  The third portion 63 is provided between the via receiving portion 53 of the first rewiring layer 50 and the second via 82 of the second rewiring layer 80, and the second receiving portion 53 of the first rewiring layer 50 and the second It is chemically bonded (for example, covalently bonded) to both the second via 82 of the rewiring layer 80. More specifically, at least a part of the third portion 63 (that is, at least a part of the molecular bonding agent forming the molecular bonding layer 60) is chemically coupled with the conductive material 50m included in the via receiving portion 53 of the first rewiring layer 50. They are linked (eg, covalently bonded). Similarly, at least a part of the third portion 63 (that is, at least a part of the molecular bonding agent forming the molecular bonding layer 60) is chemically bonded (for example, covalently bonded) to the conductive material 80m included in the second via 82. Yes. Thereby, the molecular bonding layer 60 bonds the via receiving portion 53 of the first rewiring layer 50 and the second via 82 of the second rewiring layer 80.

  Here, the molecular bonded body 60r of the molecular bonding layer 60 is not completely uniformly dispersed, for example. The second via 82 of the second redistribution layer 80 is in contact with the via receiving portion 53 of the first redistribution layer 50 at a position between the plurality of molecular assemblies 60r (that is, a region where the molecular junction 60r does not exist). As a result, the second via 82 of the second rewiring layer 80 and the via receiving portion 53 of the first rewiring layer 50 are electrically connected.

  For example, the adhesion strength between the first rewiring layer 50 and the upper insulating layer 70 is preferably 2 MPa or more, more preferably 5 MPa or more, further preferably 6 MPa or more, It is particularly preferable that the pressure be 10 MPa or more. Moreover, it is preferable that the destruction mode at the time of the measurement is a mode in which the upper insulating layer 70 is broken instead of the bonding interface. The adhesion strength can be measured by, for example, a die shear test. Specific examples of the tensile test include a method defined in MIL-STD 883G, that is, C-60749-19, EIAJ ED-4703, or the like. From another viewpoint, the adhesion strength between the first redistribution layer 50 and the upper insulating layer 70 is preferably 0.5 N / mm or more, and more preferably 1 N / mm or more. The adhesion strength can be measured by, for example, a peel strength test. As a specific example of the test, there is a method defined in Japanese Industrial Standard (JISC5012).

  The molecular bonding layer 60 may have a thickness of 0.5 nm or more, preferably 1 nm or more and 20 nm or less. The thickness of the molecular bonding layer 60 is more preferably, for example, from 1 nm to 10 nm. The coating density of the molecular bonding agent (that is, the coating density of the molecular bonding layer 60) with respect to the area of the conducting wire 51 of the first redistribution layer 50 is 20% or more, preferably 30% or more, and preferably 50% or more. It is more preferable. For example, the coating density of the molecular bonding agent with respect to the area of the conducting wire 51 of the first rewiring layer 50 is 80% or less. That is, the coating density of the molecular bonding agent with respect to the area of the conducting wire 51 of the first redistribution layer 50 is, for example, 20 to 80%, preferably 30 to 80%, and more preferably 50 to 80%. In addition, when the coating density of the molecular bonding agent is 100 area%, it is defined that the molecular bonding agent is theoretically closest packed to the surface of the object to be coated. The coating density of the molecular bonding agent can be obtained from the measurement result by the X-ray diffraction method.

  When the coating density of the molecular bonding agent with respect to the area of the conducting wire 51 of the first rewiring layer 50 is equal to or higher than the lower limit value, the adhesion between the first rewiring layer 50 and the upper insulating layer 70 can be further improved. Further, when the coating density of the molecular bonding agent with respect to the area of the conductive wire 51 of the first redistribution layer 50 is equal to or less than the upper limit, the via receiving portion 53 of the first redistribution layer 50 and the second of the second redistribution layer 80 are provided. Electrical connection with the via 82 can be easily ensured.

  For example, at least a part of the molecular bonding layer 60 has a monomolecular film shape. In the present embodiment, substantially all of the molecular bonding layer 60 is formed as a monomolecular film. In a portion of the molecular bonding layer 60 formed as a monomolecular film, one molecule of molecular bonding agent (that is, a molecular bonded body 60r) is formed by the conductive material 50m of the first rewiring layer 50 and the insulating material 70m of the upper insulating layer 70. Both are chemically bonded (for example, covalently bonded). Therefore, the adhesion between the first redistribution layer 50 and the upper insulating layer 70 can be further improved. Furthermore, an increase in the thickness of the semiconductor package 10 due to the molecular bonding layer 60 is minimized. The portion occupying a large area of the molecular bonding layer 60 is preferably a monomolecular film. For example, it is more preferable that a portion corresponding to 30 to 100% of the area covered by the molecular bonding layer 60 in the surface of the first rewiring layer 50 is a monomolecular film.

  Here, when an insulating layer is formed on the rewiring layer, for example, it is conceivable to roughen the surface of the conducting wire of the rewiring layer by etching. Thereby, the adhesiveness of the conducting wire of a rewiring layer and an insulating layer is securable by an anchor effect. However, in increasingly smaller semiconductor packages (for example, FOWLP and WLCSP), it is required to form fine wiring patterns (that is, fine patterns). In this case, if the surface of the conductive wire of the rewiring layer is etched, the conductive wire becomes thin and it is difficult to form a fine wiring pattern.

  However, in this embodiment, the adhesion between the conducting wire 51 of the rewiring layer 50 and the insulating layer 70 is ensured by providing the molecular bonding layer 60. That is, according to this embodiment, the surface of the conducting wire 51 of the rewiring layer 50 does not have to be roughened by etching. For this reason, the conducting wire 51 is not easily thinned, and the conducting wire 51 of the rewiring layer 50 can be formed into a fine wiring pattern.

  Next, a method for manufacturing the semiconductor package 10 of this embodiment will be described.

  4 and 5 are cross-sectional views showing an example of the flow of the manufacturing method of the semiconductor package 10 of the present embodiment.

  First, the semiconductor chip 20 is placed on the film F ((a) in FIG. 4). Next, an insulating material to be the mold resin portion 30 is supplied onto the semiconductor chip 20 (for example, the first to third semiconductor chips 20A, 20B, and 20C). Thereby, the mold resin part 30 is formed ((b) in FIG. 4). Next, the intermediate product manufactured by the above-described process is turned upside down and the film F is removed ((c) in FIG. 4A).

  Next, the insulating material 40m is supplied onto the semiconductor chip 20 (for example, the first to third semiconductor chips 20A, 20B, and 20C) and the mold resin portion 30. Thereby, the lower insulating layer 40 is formed ((d) in FIG. 4). Next, an opening 45 (that is, a through hole) is formed in the lower insulating layer 40 ((e) in FIG. 4). The opening 45 is provided in a region corresponding to the conductive pad 21 of the semiconductor chip 20 and penetrates the lower insulating layer 40. For example, the opening 45 is formed by etching the lower insulating layer 40. Next, the first rewiring layer 50 is formed on the lower insulating layer 40 ((f) in FIG. 4). The first redistribution layer 50 includes a conductive wire 51, a first via 52, and a via receiving portion 53. For example, the first rewiring layer 50 is formed by a metal plating process. The metal plating process includes, for example, forming a seed layer such as palladium by sputtering, and performing electrolytic plating or electroless plating on the seed layer. The method for forming the first rewiring layer 50 is not limited to the above example. Some examples of the method of forming the first redistribution layer 50 will be described in detail in the second to fourth embodiments.

  Next, the molecular bonding layer 60 is formed on the surface of the first rewiring layer 50 ((a) in FIG. 5). For example, the molecular bonding layer 60 is formed by coating the surface of the first rewiring layer 50 with a molecular bonding agent (that is, applying a molecular bonding agent to the surface of the first rewiring layer 50). For example, the molecular bonding agent is applied to the surfaces of the conductive wire 51, the first via 52, and the via receiving portion 53 of the first rewiring layer 50. The molecular bonding layer 60 is formed by, for example, applying a molecular bonding agent solution containing the above-described molecular bonding agent to the first rewiring layer 50. Examples of the method of applying the molecular bonding agent solution include a method of immersing the intermediate product manufactured by the above process in the molecular bonding agent solution or spraying the molecular bonding agent solution on the first rewiring layer 50. It is done.

  When coating the surface of the first rewiring layer 50 with a molecular bonding agent, it is preferable to use a molecular bonding agent solution. The molecular bonding agent solution can be prepared by dissolving the above-described molecular bonding agent in a solvent.

  Examples of the solvent include alcohols such as methanol, ethanol, isopropanol, ethylene glycol, propylene glycol, cellosolve and carbitol; ketones such as acetone, methyl ethyl ketone and cyclohexanone; aromatic hydrocarbons such as benzene, toluene and xylene; hexane Aliphatic hydrocarbons such as ethyl, octane, decane, dodecane and octadecane; esters such as ethyl acetate, methyl propionate and methyl phthalate; and ethers such as tetrahydrofuran, ethyl butyl ether and anisole. Moreover, the mixed solvent which mixed these solvents can also be used.

  The concentration of the molecular bonding agent solution is preferably 0.001% by mass or more and 1% by mass or less of the molecular bonding agent with respect to the total mass of the molecular bonding agent solution, and 0.01% by mass or more and 0.1% by mass or less. It is more preferable that When the concentration of the molecular bonding agent solution is equal to or higher than the lower limit, the coating density of the molecular bonding agent and the adhesion between the members can be further increased. When the concentration of the molecular bonding agent solution is equal to or lower than the above upper limit value, it is difficult to contain a molecular bonding agent that does not chemically bond (for example, covalent bonding), and thus the first rewiring layer 50 and the upper insulating layer 70 are easily adhered. be able to. In addition, an increase in the thickness of the semiconductor package 10 due to the molecular bonding layer 60 can be suppressed.

  The prepared molecular bonding agent solution is applied to the surface of the first rewiring layer 50. By leaving the intermediate product coated with the molecular bonding agent solution, chemical bonding (for example, covalent bonding) between the conductive material 50m of the conductive wire 51 of the first rewiring layer 50 and the molecular bonding agent is promoted. . Furthermore, an operation of applying energy (for example, heat or light (for example, ultraviolet rays)) to the molecular bonding layer 60 may be performed. For example, the intermediate product to which the molecular bonding agent solution is applied may be dried by heating at an arbitrary temperature and time. By the operation of applying energy, chemical bonding (for example, covalent bonding) between the conductive material 50m included in the first rewiring layer 50 and the molecular bonding agent is further promoted. Thereafter, the intermediate product is washed with a cleaning liquid and dried to obtain an intermediate product in which the surface of the first rewiring layer 50 is coated with the molecular bonding agent. The cleaning liquid may be the same as the solvent used for the molecular bonding agent solution.

  The conductive material 50m of the first redistribution layer 50 covered with the molecular bonding agent forms a chemical bond (for example, a covalent bond) with the molecular bonding agent. That is, the molecular bonding layer 60 including a molecular bonding agent (for example, molecular bonded body 60r) chemically bonded (for example, covalently bonded) to the conductive material 50m included in the first rewiring layer 50 is formed on the surface of the first rewiring layer 50. It is formed. The “molecular bonding layer” in the description relating to the production method of the present application refers to a molecular bonding layer that has undergone a chemical reaction (for example, chemically bonded), and at least a part of the molecular bonding layer before the chemical reaction (for example, not chemically bonded). May mean layer. The molecular bonding layer at least partially before the chemical reaction may be read as “molecular bonding agent”.

  The molecular bonding agent solution may be applied not only to the surface portion of the first rewiring layer 50 but also to the portion where the first rewiring layer 50 is not provided. By covering the lower insulating layer 40 with a molecular bonding agent, a molecular bonding layer 60 including a molecular bonding agent (for example, a molecular bonded body 60r) chemically bonded (for example, covalently bonded) to the insulating material 40m included in the lower insulating layer 40 is formed. Alternatively, it may be formed on the surface of the lower insulating layer 40.

  The thickness of the molecular bonding layer 60 can be adjusted by conditions such as the concentration and coating amount of the molecular bonding agent solution, and the time and number of cleaning.

  Next, the insulating material 70 m is supplied onto the molecular bonding layer 60. Thereby, the surface of the molecular bonding layer 60 is covered with the insulating material 70m, and the upper insulating layer 70 is formed ((b) in FIG. 5). As a result, the insulating material 70 m of the upper insulating layer 70 comes into contact with at least a part of the molecular bonding layer 60. The molecular bonding agent is also chemically bonded (for example, covalently bonded) to the insulating material 70m of the upper insulating layer 70. Thereby, the molecular bonding agent is chemically bonded (for example, covalently bonded) to both the conductive material 50m of the first rewiring layer 50 and the insulating material 70m of the upper insulating layer 70. Here, an operation of applying energy to the molecular bonding layer 60 may be performed. As the energy, for example, heat or light (for example, ultraviolet rays) can be used. Thereby, chemical bonding (for example, covalent bonding) between the molecular bonding agent and the insulating material 70m of the upper insulating layer 70 can be promoted. The heating temperature and time are appropriately determined according to the application amount of the molecular bonding agent solution. When heat is used, heating at about 150 to 200 ° C. can be performed for 5 minutes or longer, preferably 60 minutes or longer, more preferably 80 minutes or longer, and 120 minutes or shorter, preferably 240 minutes or shorter. For example, heat may be applied for 5 minutes to 120 minutes, preferably 60 minutes to 240 minutes, more preferably 80 minutes to 240 minutes, depending on the constituent material of the molecular bonding layer 60. When light is used, ultraviolet rays or the like can be irradiated. Moreover, it is preferable that the wavelength of the ultraviolet-ray to irradiate is 250 nm or less, and irradiation time is suitably determined according to the application amount of a molecular bonding agent solution.

  Next, an opening 75 (that is, a through hole) is formed in the upper insulating layer 70 ((c) in FIG. 5). The opening 75 is provided in a region corresponding to the via receiving portion 53 of the first redistribution layer 50 and penetrates the upper insulating layer 70. For example, the opening 75 is formed by etching the upper insulating layer 70. Next, the second rewiring layer 80 is formed on the upper insulating layer 70 ((d) in FIG. 5). The second rewiring layer 80 includes a terminal portion 81. For example, the second rewiring layer 80 is formed by a metal plating process. The metal plating process includes, for example, forming a seed layer such as palladium by sputtering and performing electrolytic plating or electroless plating on the seed layer. The method for forming the second redistribution layer 80 is not limited to the above example. Some examples of the method of forming the second redistribution layer 80 will be described in detail in the second to fourth embodiments. Thereafter, the solder connection part 90 is provided in the terminal part 81 of the second redistribution layer 80 ((e) in FIG. 5).

  The chemical bonding (for example, covalent bonding) of the molecular bonding agent may be performed without applying energy such as heat or light. Alternatively, chemical bonding (for example, covalent bonding) of the molecular bonding agent may be performed by applying energy such as heat or light.

  Next, a modification of this embodiment will be described.

  FIG. 6 is a cross-sectional view showing a part of a semiconductor package 10 according to a modification of the present embodiment. The semiconductor package 10 of this modification is different from the first embodiment in that it has a plurality of insulating layers covering a plurality of redistribution layers. Configurations other than those described below are the same as those in the first embodiment.

  As shown in FIG. 6, the semiconductor package 10 of this modification includes a semiconductor chip 20, a first redistribution layer 50, a first molecular bonding layer 60, a first insulating layer 70, a second redistribution layer 80, and a second molecule. A bonding layer 100 and a second insulating layer 110 are provided. The first rewiring layer 50, the first molecular bonding layer 60, and the first insulating layer 70 are substantially the same as the first rewiring layer 50, the molecular bonding layer 60, and the upper insulating layer 70 of the first embodiment. It is. Note that at least a part of the conducting wire (that is, the first conducting wire) 51 of the first redistribution layer 50 may be provided on the surface of the semiconductor chip 20 instead of the surface of the lower insulating layer 40. The “surface of the semiconductor chip 20” referred to here may be the surface of a passivation film provided on the semiconductor chip 20.

  The second rewiring layer 80 is provided on the side opposite to the first rewiring layer 50 with respect to the first insulating layer 70. For example, the second rewiring layer 80 is provided on the surface of the first insulating layer 70. The second redistribution layer 80 is provided between the first insulating layer 70 and the second insulating layer 110. The second rewiring layer 80 is a layer including a plurality of second conductive wires (for example, second rewiring) 85. The plurality of second conductive wires 85 are electrically connected to the conductive pads 21 of the semiconductor chip 20 via the plurality of first conductive wires 51 of the first redistribution layer 50. Electronic signals from the semiconductor chip 20 flow through the plurality of second conductive wires 85. The second redistribution layer 80 is formed of a second conductive material (for example, conductive metal) 80m. The conductive material 80m may be the same as or different from the conductive material 50m forming the first redistribution layer 50.

  The second redistribution layer 80 includes a second via 82 (see FIG. 2) in addition to the second conductive wire 85. The second via 82 is physically and electrically connected to the second conducting wire 85. For example, the second via 82 is substantially the same as the second via 82 of the first embodiment. For example, the second conductor 85 is electrically connected to the first conductor 51 of the first redistribution layer 50 through the second via 82.

  The second molecular bonding layer 100 is provided on the side opposite to the first insulating layer 70 with respect to the second redistribution layer 80. The second molecular bonding layer 100 is provided on at least a part of the surface of the second rewiring layer 80. In the present embodiment, the second molecular bonding layer 100 is provided on substantially the entire surface of the second rewiring layer 80. The detailed description of the second molecular bonding layer 100 is as follows. In the description of the molecular bonding layer 60 of the first embodiment, the “first rewiring layer 50” is replaced by the “second rewiring layer 80” and the “conductive wire 51 (ie, “First conductive wire” ”is“ second conductive wire 85 ”,“ conductive material 50m (that is, first conductive material) ”is“ second conductive material 80m ”, and“ upper insulating layer 70 (that is, first insulating layer) ”is“ first ”. “2 insulating layer 110” and “insulating material 70m (that is, first insulating material)” may be read as “second insulating material 110m”.

  The second insulating layer 110 is provided on the opposite side of the second rewiring layer 80 from the first insulating layer 70. The second insulating layer 110 covers at least a part of the second molecular bonding layer 100. In the present embodiment, the second insulating layer 110 covers substantially the entire second molecular bonding layer 100. The second insulating layer 110 is formed of a second insulating material 110m. The second insulating material 110m is, for example, an acrylic resin, an oxetane resin, or an epoxy resin, but is not limited thereto. The second insulating material 110m may be the same as or different from the insulating material 70m that forms the first insulating layer 70.

  In other words, in the present embodiment, the semiconductor package 10 is provided on the surface of the first insulating layer 70, the second redistribution layer 80 including the second conductive wire 85 through which the electrical signal of the semiconductor chip 20 flows, and the second redistribution wiring. A second molecular bonding layer 100 provided on at least a part of the surface of the layer 80 and a second insulating layer 110 covering at least a part of the second redistribution layer 80 are provided. At least a part of the second molecular bonding layer 100 is chemically bonded (for example, covalently bonded) to the conductive material 80m included in the second conductive wire 85. At least a part of the second molecular bonding layer 100 is chemically bonded (for example, covalently bonded) to the second insulating material 110m included in the second insulating layer 110.

  An additional rewiring layer and an insulating layer may be further provided on the surface of the second insulating layer 110. For example, a third molecular junction layer, a third redistribution layer and a third insulating layer,... Nth molecular junction layer, nth redistribution layer and nth insulating layer (n is an integer of 2 or more) are provided. It may be. At this time, the configuration of the n-th molecular bonding layer, the n-th rewiring layer, and the n-th insulating layer may be the same as the configuration of the first molecular bonding layer 60, the first re-wiring layer 50, and the first insulating layer 70.

  Further, as in the example shown in the figure, the molecular bonding layer 60 may be provided in a portion where the first redistribution layer 50 is not provided on the surface of the semiconductor chip 20. That is, this part and the first insulating layer 70 may be bonded by the molecular bonding layer 60. Similarly, a molecular bonding layer may be provided in a portion where the nth rewiring layer is not provided on the surface of the (n-1) th insulating layer provided with the nth wiring layer. That is, this part and the nth insulating layer placed on the (n−1) th insulating layer may be joined by the nth molecular bonding layer.

  Further, when the n-th redistribution layer, the n-th molecular bonding layer, and the n-th insulating layer are provided (for example, when the second re-wiring layer 80, the second molecular bonding layer 100, and the second insulating layer 110 are provided), The same process as the process of providing the first rewiring layer 50, the molecular bonding layer 60, and the upper insulating layer 70 described in the first embodiment is repeated. In the example shown in the figure, the second redistribution layer 80 is formed on the surface of the first insulating layer 70, the second molecular bonding layer 100 is formed on the surface of the first rewiring layer 50, and the second molecular bonding layer 100 is formed on the surface of the second molecular bonding layer 100. The two insulating layers 110 are provided by the same process as described above. The molecular bonding agent (that is, the first molecular bonding agent) that forms the first molecular bonding layer 60 and the molecular bonding agent (that is, the second molecular bonding agent) that forms the second molecular bonding layer 100 may be the same. May be different.

(Second Embodiment)
Next, a second embodiment will be described with reference to FIGS. This embodiment is different from the first embodiment in that a molecular bonding layer is provided for metal plating treatment. Configurations other than those described below are the same as those in the first embodiment.

  FIG. 7 is a cross-sectional view showing the semiconductor package 10 of the present embodiment.

  As shown in FIG. 7, the semiconductor package 10 of this embodiment includes a third molecular bonding layer 210 and a fourth molecular bonding layer 220 in addition to the configuration of the semiconductor package 10 of the first embodiment. Here, in FIG. 7, the illustration of the first molecular bonding layer 60 described in the first embodiment is omitted for convenience of description. The semiconductor package 10 of the second to fourth embodiments may or may not have the first molecular bonding layer 60 and the second molecular bonding layer 100 described in the first embodiment. In one aspect, the third molecular bonding layer 210 may be referred to as a “first molecular bonding layer”. The fourth molecular bonding layer 220 may be referred to as a “second molecular bonding layer”.

  As shown in FIG. 7, the third molecular bonding layer 210 is provided between the lower insulating layer 40 and the first rewiring layer 50, and is chemically bonded to both the lower insulating layer 40 and the first rewiring layer 50. doing. Thereby, the third molecular bonding layer 210 bonds the lower insulating layer 40 and the first redistribution layer 50 together. In other words, the third molecular bonding layer 210 is provided on at least the surface of the lower insulating layer 40. The first redistribution layer 50 is formed by performing metal plating on the third molecular bonding layer 210 and bonded to the surface of the lower insulating layer 40 by the third molecular bonding layer 210.

  On the other hand, the fourth molecular bonding layer 220 is provided between the upper insulating layer 70 and the second rewiring layer 80 and is chemically bonded to both the upper insulating layer 70 and the second rewiring layer 80. Thereby, the fourth molecular bonding layer 220 bonds the upper insulating layer 70 and the second rewiring layer 80 together. In other words, the fourth molecular bonding layer 210 is provided at least on the surface of the upper insulating layer 70. The second redistribution layer 80 is formed by performing metal plating on the fourth molecular bonding layer 220 and bonded to the surface of the upper insulating layer 70 by the fourth molecular bonding layer 220.

  Hereinafter, the third molecular bonding layer 210 will be described in detail. The fourth molecular bonding layer 220 is substantially the same as the third molecular bonding layer 210, and thus detailed description thereof is omitted. In the following description, the “third molecular bonding layer 210” is simply referred to as “molecular bonding layer 210”. The “lower insulating layer 40” is simply referred to as “insulating layer 40”.

  FIG. 8 is an enlarged cross-sectional view showing the periphery of the molecular bonding layer 210.

  As shown in FIG. 8, the semiconductor package 10 includes a semiconductor chip (that is, a semiconductor device component) 20, an insulating layer 40, a molecular bonding layer 210, and a first redistribution layer 50. In the following description, the first rewiring layer 50 is referred to as a metal plating layer 50 for convenience of description. The “metal plating layer” referred to in the present application is not limited to the rewiring layer, but may be a plating layer used for other purposes (for example, a ground layer, product protection, decoration).

  The semiconductor chip 20 includes, for example, a semiconductor substrate 22, a conductive pad 21, and an insulating film 23.

  The semiconductor substrate 22 is a member formed of a semiconductor and having an electric circuit formed in the previous process. Examples of the semiconductor substrate 22 include a Si single crystal substrate, a Si epitaxial substrate, a GaAs substrate, and a GaP substrate. Among these, a Si single crystal substrate and a Si epitaxial substrate are preferable from the viewpoint of availability.

  The conductive pad 21 is a terminal through which an electric signal of the semiconductor substrate 22 (that is, an electric signal of the semiconductor chip 20) flows. The conductive pad 21 is an example of a “conductive part”. As described above, the conductive pad 21 is formed of a metal (that is, a metal material) 21m. The metal 21m is, for example, copper, a copper alloy, aluminum, or an aluminum alloy (for example, an aluminum-silicon alloy), but is not limited thereto. The side surface of the conductive pad 21 is in contact with the insulating film 23. In addition, an insulating film 23 may be provided on the peripheral edge of the conductive pad 21. Although the thickness of the electrically conductive pad 21 is not specifically limited, For example, it is preferable that they are 0.1 micrometer or more and 10 micrometers or less.

  The insulating film 23 is an oxide film or a nitride film formed from a resin film or a semiconductor material of the semiconductor substrate 22, and is also called a passivation film. The resin film is formed from a resin material such as polyimide. The resin film can be formed by photolithography using a resin material. The oxide film is made of a semiconductor oxide. The oxide film can be generated by oxidizing the surface of the semiconductor substrate 22 with an oxidizing gas such as water vapor. The nitride film is made of a semiconductor nitride. The nitride film can be generated by nitriding the surface of the semiconductor substrate 22 with a nitrogen-containing gas such as ammonia.

  The insulating film 23 has an opening 25 that exposes at least a part of the conductive pad 21. The “opening (or hole)” in the present application may be an opening that is open in at least a part of the manufacturing process of the semiconductor package 10, and is filled with another member when the semiconductor package 10 is completed. Also includes an opening. The opening 25 is an example of an “exposed portion”. Although the thickness of the insulating film 23 is not specifically limited, For example, it is preferable that they are 1 micrometer or more and 10 micrometers or less. The thickness of the insulating film 23 may be uniform or non-uniform. For example, the thickness of the insulating film 23 may decrease from the position of the opening toward the outside. That is, the insulating film 23 may have an inclined shape.

  The insulating layer (for example, insulating resin layer) 40 is a member that forms an insulating portion with respect to the semiconductor chip 20. The insulating layer 40 is formed on the insulating film 23 and the peripheral edge of the conductive pad 21. The insulating layer 40 has an opening 45 at a position corresponding to the conductive pad 21. The opening 45 exposes at least a part of the conductive pad 21. The opening 45 is an example of an “exposed portion”. Note that “exposing” in the present application means exposing to the outside of a member provided with an opening. That is, “the opening 45 exposes at least a part of the conductive pad 21” means that the opening 45 exposes at least a part of the conductive pad 21 outside the insulating layer 40 provided with the opening 45. Means that. The opening 45 is formed by removing a part of the insulating layer 40 on the conductive pad 21 by etching (for example, photolithography). The conductive pad 21 and the metal plating layer 50 are physically and electrically connected through the opening 45 as described later. Although the thickness of the insulating layer 40 is not specifically limited, For example, it is preferable that they are 1 micrometer or more and 10 micrometers or less.

  Next, the molecular bonding layer 210 will be described.

  The molecular bonding layer 210 is provided at least on the surface of the insulating layer 40. The molecular bonding layer 210 has a function of bonding the insulating layer 40 and the metal plating layer 50. The molecular bonding layer 210 is formed by, for example, substantially the same molecular bonding agent as the molecular bonding layer 60 described in the first embodiment. That is, an example of the molecular bonding layer 210 is formed of a compound such as a triazine derivative and includes a triazine dithiol residue. An example of the molecular bonding layer 210 includes a molecular bonding body 60r (see FIG. 3).

  As shown in FIG. 8, the molecular bonding layer 210 has a first portion 210a, a second portion 210b, and a third portion 210c.

  For example, the first portion 210 a is provided on the surface 40 a of the insulating layer 40 different from the opening 45. The first portion 210a is provided between the surface 40a of the insulating layer 40 and the metal plating layer 50 (for example, the conductive wire 51 included in the metal plating layer 50), and the surface 40a of the insulating layer 40 and the metal plating layer 50 (for example, metal The conducting wire 51) included in the plating layer 50 is joined. For example, at least a part of the first portion 210 a of the molecular bonding layer 210 is chemically bonded (for example, covalently bonded) to the insulating material 40 m included in the insulating layer 40. Further, at least a part of the first portion 210a of the molecular bonding layer 210 is chemically bonded (for example, covalently bonded) to a conductive material (hereinafter sometimes referred to as “first metal”) 50m included in the metal plating layer 50. )doing. For example, the first portion 210a includes a molecular assembly 60r chemically bonded (for example, covalently bonded) to both the insulating material 40m of the insulating layer 40 and the first metal 50m of the metal plating layer 50. In other words, one molecule of the molecular bonding agent (for example, the molecular bonded body 60r) included in the first portion 210a is chemically bonded to both the insulating material 40m of the insulating layer 40 and the first metal 50m of the metal plating layer 50 (for example, A covalent bond). That is, the insulating layer 40 and the metal plating layer 50 are bonded through a chemical bond (for example, a covalent bond) of the molecular bonding layer 210. Therefore, the insulating layer 40 and the metal plating layer 50 are firmly adhered.

  The second portion 210b is provided on the inner surface 45a (for example, the inner peripheral surface) of the opening 45. The second portion 210b is provided between the inner surface 45a of the opening 45 and the metal plating layer 50 (for example, the first via 52 included in the metal plating layer 50), and the inner surface 45a of the opening 45 and the metal plating layer 50 ( For example, the first via 52) included in the metal plating layer 50 is joined. For example, at least a part of the second portion 210 b of the molecular bonding layer 210 is chemically bonded (for example, covalently bonded) to the insulating material 40 m included in the insulating layer 40. At least a part of the second portion 210 b of the molecular bonding layer 210 is chemically bonded (for example, covalently bonded) to the first metal 50 m included in the metal plating layer 50. For example, the second portion 210b includes a molecular assembly 60r that is chemically bonded (for example, covalently bonded) to both the insulating material 40m of the insulating layer 40 and the first metal 50m of the metal plating layer 50. In other words, one molecule of the molecular bonding agent (for example, the molecular bonded body 60r) included in the second portion 210b is chemically bonded to both the insulating material 40m of the insulating layer 40 and the first metal 50m of the metal plating layer 50 (for example, A covalent bond).

  The third portion 210 c is provided on the surface 21 a of the conductive pad 21 exposed at the opening 45. The third portion 210c is provided between the surface 21a of the conductive pad 21 and the metal plating layer 50 (for example, the first via 52 included in the metal plating layer 50), and the surface 21a of the conductive pad 21 and the metal plating layer 50 ( For example, the first via 52) included in the metal plating layer 50 is joined. For example, at least a part of the third portion 210c of the molecular bonding layer 210 is chemically bonded (for example, covalently bonded) to a metal 21m (hereinafter sometimes referred to as “second metal”) included in the conductive pad 21. ing. At least a part of the third portion 210 c of the molecular bonding layer 210 is chemically bonded (for example, covalently bonded) to the first metal 50 m included in the metal plating layer 50. The molecular conjugate 60r chemically bonded (for example, covalently bonded) to the second metal 21m and the molecular conjugate 60r chemically bonded (for example, covalently bonded) to the first metal 50m are the same or different. May be. If the molecular bonded body 60r of one molecule is chemically bonded (for example, covalently bonded) to both the second metal 21m and the first metal 50m, the adhesion between the conductive pad 21 and the metal plating layer 50 is further increased. When the molecular bonding layer 210 is provided on both the surface 40a of the insulating layer 40 and the surface 21a of the conductive pad 21 as in the present embodiment, the semiconductor chip 20 and the metal plating layer 50 are more firmly adhered.

  For example, the molecular conjugate 60r of the molecular junction layer 210 is not completely uniformly dispersed, for example. The first via 52 of the metal plating layer 50 is in contact with the conductive pad 21 of the semiconductor chip 20 at a position between the plurality of molecular bonded bodies 60r (that is, a region where the molecular bonded body 60r does not exist). Thereby, the first via 52 of the metal plating layer 50 is physically and electrically connected to the conductive pad 21 of the semiconductor chip 20.

  For example, at least a part of the first portion 210a, the second portion 210b, and the third portion 210c are integrally formed (that is, in series). The metal plating layer 50 is chemically bonded to the first portion 210a, the second portion 210b, and the third portion 210c of the molecular bonding layer 210.

  The thickness of the molecular bonding layer 210 is preferably 0.5 nm or more and 20 nm or less, and more preferably 1 nm or more and 10 nm or less. The adhesiveness of the insulating layer 40 and the metal plating layer 50 can be improved more as the thickness of the molecular junction layer 210 is more than the said lower limit. When the thickness of the molecular bonding layer 210 is equal to or less than the above upper limit value, the electrical connection between the conductive pad 21 and the metal plating layer 50 can be easily ensured.

  At least a part of the molecular bonding layer 210 provided on the surface of the insulating layer 40 is preferably a monomolecular film. For example, it is preferable that 30% by area or more and 100% by area or less of the molecular bonding layer 210 have a monomolecular film shape, and it is more preferable that the entire molecular bonding layer 210 has a monomolecular film shape. In the region of the molecular bonding layer 210 formed as a monomolecular film, one molecular bonding agent is covalently bonded to both the first metal 50m and the insulating material 40m. Therefore, the adhesion between the metal plating layer 50 and the insulating layer 40 is further improved. Further, an increase in the thickness of the semiconductor package 10 due to the molecular bonding layer 210 is suppressed.

  At least a part of the molecular bonding layer 210 provided on the surface 21a of the conductive pad 21 exposed in the opening 45 is preferably a monomolecular film. For example, it is preferable that 30% by area or more and 100% by area or less of the molecular bonding layer 210 have a monomolecular film shape, and it is more preferable that the entire molecular bonding layer 210 has a monomolecular film shape. In the region of the molecular bonding layer 210 formed as a monomolecular film, one molecule of molecular bonding agent is covalently bonded to both the first metal 50m and the second metal 21m. Therefore, the adhesion between the conductive pad 21 and the metal plating layer 50 is further improved. Moreover, the electrical connection between the conductive pad 21 and the metal plating layer 50 is easily ensured. Further, an increase in the thickness of the semiconductor package 10 due to the molecular bonding layer 210 is suppressed.

  The covering density of the molecular bonding layer 210 with respect to the area of the insulating layer 40 may be the same as or different from the covering density of the molecular bonding agent with respect to the area of the surface 21 a of the conductive pad 21. However, from the viewpoint of adhesion between the area of the insulating layer 40 and the metal plating layer 50, the coating density of the molecular bonding agent with respect to the area of the insulating layer 40 is higher than the coating density of the molecular bonding agent with respect to the area of the surface 21 a of the conductive pad 21. Is preferably high. For example, the coating density of the molecular bonding agent with respect to the area of the insulating layer 40 is preferably 20 area% or more, preferably 30 area% or more, and more preferably 50 area% or more. When the coating density of the molecular bonding agent with respect to the area of the insulating layer 40 is equal to or higher than the lower limit, the adhesion between the insulating layer 40 and the metal plating layer 50 can be further improved. Since the covering density of the molecular bonding layer 210 with respect to the area of the insulating layer 40 is preferably high, the upper limit value is not particularly limited. Examples of the upper limit of the coating density include 70 area% or 80 area%.

  The covering density of the molecular bonding agent with respect to the area of the surface 21a of the conductive pad 21 is preferably 20 area% or more and 80 area% or less, more preferably 30 area% or more and 70 area% or less, and 40 area% or more. More preferably, it is 60 area% or less. When the coating density of the molecular bonding agent with respect to the area of the surface 21a of the conductive pad 21 is equal to or higher than the lower limit value, the adhesion between the conductive pad 21 and the metal plating layer 50 can be further improved. Further, when the coating density of the molecular bonding agent with respect to the area of the surface 21a of the conductive pad 21 is not more than the above upper limit value, the electrical connection between the conductive pad 21 and the metal plating layer 50 can be easily ensured.

  The other configurations and functions related to the molecular bonding layer 210 are substantially the same as the configurations and functions of the molecular bonding layer 60 of the first embodiment. That is, the other description regarding the molecular bonding layer 210 is that in the description of the molecular bonding layer 60 of the first embodiment, the “molecular bonding layer 60” is the “molecular bonding layer 210” and the “upper insulating layer 70” is the “lower insulating layer”. The “layer 40” or “conductive pad 21” and “insulating material 70m” may be read as “insulating material 40m” or “metal 21m”. For example, the adhesion strength between the insulating layer 40 and the metal plating layer 50 may be substantially the same as or different from the adhesion strength between the rewiring layer 50 and the upper insulating layer 70 in the first embodiment. .

  Next, the metal plating layer 50 will be described.

  The metal plating layer 50 is a member having a function of a conducting wire through which an electrical signal flows in the semiconductor package 10, and is, for example, a rewiring layer. The metal plating layer 50 is bonded to the surface of the insulating layer 40 by the molecular bonding layer 210. The metal plating layer 50 is physically and electrically connected to the conductive pad 21 through the opening 45 of the insulating layer 40. As described above, the third portion 210 c of the molecular bonding layer 210 may be provided between the metal plating layer 50 and the conductive pad 21. Thereby, the metal plating layer 50 and the conductive pad 21 may adhere more firmly.

  From a certain point of view, the metal plating layer 50 is bonded to the first portion 210a, the second portion 210b, and the third portion 210c of the molecular bonding layer 210. For example, the metal plating layer 50 includes a conductive wire 51 and a first via 52. The conducting wire 51 is provided along the surface 40 a of the insulating layer 40, which is different from the opening 45, and is joined to the first portion 210 a of the molecular bonding layer 210. The first via 52 is provided in the opening 45 and is bonded to the second portion 210 b and the third portion 210 c of the molecular bonding layer 210.

  As shown in FIG. 8, the metal plating layer 50 of the present embodiment includes a first metal plating layer 55 and a second metal plating layer 56. The first metal plating layer 55 and the second metal plating layer 56 are laminated together in the thickness direction of the metal plating layer 50.

  The first metal plating layer 55 is a seed layer having a seed metal 55 m serving as a growth starting point of the rewiring layer 50 including the second metal plating layer 56. The seed metal 55m is a metal (that is, a metal material) that forms the first metal plating layer 55. As seed metal 55m of this embodiment, metals, such as palladium, are mentioned, for example. Although the thickness of the 1st metal plating layer 55 is not specifically limited, For example, it is preferable from a viewpoint of the function of a growth starting point that they are 0.05 micrometer or more and 2 micrometers or less. The first metal plating layer 55 can be formed by performing metal plating using the seed metal 55m on the surface of the molecular bonding layer 210. In the present embodiment, the first metal plating layer 55 is bonded to the insulating layer 40 by the molecular bonding layer 210. Therefore, in the present embodiment, the seed metal 55m is an example of the first metal 50m that is chemically bonded (for example, covalently bonded) to the molecular bonding layer 210.

  The second metal plating layer 56 is a main body portion of the rewiring layer 50 and includes a rewiring metal 56m. The rewiring metal 56m is a metal (that is, a metal material) that forms the second metal plating layer 56. Examples of the rewiring metal 56m include metals such as copper, nickel, and alloys thereof. The rewiring metal 56m may be the same as or different from the second metal 21m. Although the thickness of the 2nd metal plating layer 56 is not specifically limited, For example, it is preferable that they are 1 micrometer or more and 10 micrometers or less. It can suppress that the function of the conducting wire of an electrical signal is impaired by the disconnection etc. that the thickness of the 2nd metal plating layer 56 is more than the said lower limit. When the thickness of the second metal plating layer 56 is equal to or less than the above upper limit value, an increase in the thickness of the semiconductor package 10 due to the molecular bonding layer 210 can be suppressed. The first metal 50m includes both the seed metal 55m and the rewiring metal 56m.

  Next, an example of a method for manufacturing the semiconductor package 10 of the present embodiment will be described. In addition, the process shown below is a process corresponding to (c) to (f) in FIG. 4, for example.

  First, the semiconductor chip 20 having the semiconductor substrate 22, the conductive pads 21, and the insulating film 23 is prepared (FIG. 9). Next, the insulating material 40m is supplied to the surface of the semiconductor chip 20, whereby the insulating layer 40 is provided. Next, an opening 45 (that is, a through hole) is formed in the insulating layer 40 (FIG. 10). The opening 45 is provided in a region corresponding to the conductive pad 21 of the semiconductor chip 20 and penetrates the insulating layer 40. For example, the opening 45 is formed by etching the insulating layer 40.

  Next, the surface 40a of the insulating layer 40 different from the opening 45, the inner surface 45a of the opening 45, and the surface 21a of the conductive pad 21 exposed in the opening 45 are coated with a molecular bonding agent (that is, the molecular bonding agent is applied). By applying, the molecular bonding layer 210 including the first portion 210a, the second portion 210b, and the third portion 210c is formed (FIG. 11). For example, by leaving the insulating layer 40 coated with the molecular bonding agent solution, chemical bonding (for example, covalent bonding) between the insulating material 40m of the insulating layer 40 and the molecular bonding agent is promoted. Furthermore, an operation of applying energy (for example, heat or light (for example, ultraviolet rays)) to the molecular bonding layer 120 may be performed. The heating temperature and time are appropriately determined according to the application amount of the molecular bonding agent solution. Moreover, it is preferable that the wavelength of the ultraviolet-ray to irradiate is 250 nm or less, and irradiation time is suitably determined according to the application amount of a molecular bonding agent solution. Thereafter, the insulating layer 40 is cleaned using a cleaning liquid and dried. Thereby, the molecular bonding layer 210 chemically bonded (for example, covalently bonded) to the insulating material 40m of the insulating layer 40 and the second metal 21m of the conductive pad 21 is formed. The details of the method of forming the molecular bonding layer 210 are substantially the same as the details of the method of forming the molecular bonding layer 60 described in the first embodiment. For example, the molecular bonding agent is supplied in the form of a molecular bonding agent solution as described above in the first embodiment.

  The chemical bonding (for example, covalent bonding) of the molecular bonding agent may be performed without applying energy such as heat or light. Alternatively, chemical bonding (for example, covalent bonding) of the molecular bonding agent may be performed by applying energy such as heat or light.

  The thickness of the molecular bonding layer 210 can be adjusted by conditions such as the concentration and the coating amount of the molecular bonding agent solution, and the time and number of cleaning. Further, the coating density of the molecular bonding layer 210 with respect to the area of the surface 21a of the conductive pad 21 can be adjusted by conditions such as the concentration and application amount of the molecular bonding agent solution, and the cleaning time and frequency.

  Next, a metal plating process is performed on the surfaces of the first portion 210a, the second portion 210b, and the third portion 210c of the molecular bonding layer 210. For example, the surface of the molecular bonding layer 210 (for example, the surfaces of the first portion 210a, the second portion 210b, and the third portion 210c) is subjected to the first metal plating process using the seed metal 55m. As a result, a first metal plating layer 55 (for example, a seed layer) having a seed metal 55m serving as a growth starting point of the metal plating layer (for example, the rewiring layer) 50 is formed on the molecular bonding layer 210 (FIG. 12).

  For example, by allowing the first metal plating layer 55 formed on the molecular bonding layer 210 to stand, the first metal 50 m (for example, the seed metal 55 m) included in the first metal plating layer 55 and the molecular bonding layer 210 are placed. Chemical bonds between them (eg covalent bonds) are promoted. Further, an operation of applying energy (for example, heat or light (for example, ultraviolet rays)) to the molecular bonding layer 120 is performed, and the first metal 50m (for example, the seed metal 55m) included in the first metal plating layer 55, the molecular bonding layer 210, and the like. Chemical bonds between (eg, covalent bonds) may be promoted.

  Next, a resist film R for forming a wiring pattern is formed at a specific location on the first metal plating layer 55 by, for example, photolithography (FIG. 13). Thereafter, the surface of the first metal plating layer 55 is subjected to a second metal plating process using the rewiring metal 56m. Thereby, the film formed from the rewiring metal 56m grows using the seed metal 55m of the first metal plating layer 55 as a growth starting point, and the second metal plating layer 56 is formed (FIG. 14).

  The first metal plating process for forming the seed layer may be either an electrolytic plating process or an electroless plating process. The first metal plating process is, for example, an electroless plating process. The “electroless plating process” referred to in the present application is not limited to the spray plating process, and may be various other electroless plating processes. By using electroless plating, the first metal plating layer 55 having a fine and uniform shape can be formed. In addition, equipment costs and maintenance costs for metal plating can be reduced.

  The second metal plating process for forming the main part of the rewiring layer may be either electrolytic plating or electroless plating. The second metal plating process is, for example, an electrolytic plating process. By using electrolytic plating, the second metal plating layer 56 having a thickness of 1 μm or more, preferably 2 μm or more can be formed.

  By performing the metal plating process as described above, the metal plating layer 50 that is electrically connected to the conductive pad 21 through the opening 45 of the insulating layer 40 can be formed.

  After the formation of the metal plating layer 50, a part of the second metal plating layer 56 formed in the opening 45 may be removed by photolithography to form a recess 52a of the first via 52. Further, the resist film R formed on the first metal plating layer 55 is removed by cleaning (see FIG. 15). Thereafter, the first metal plating layer 55 in a portion where the second metal plating layer 56 is not formed is removed by etching (FIG. 16). In removing the first metal plating layer 55, the molecular bonding layer 210 may be removed.

  By using the manufacturing method as described above, the semiconductor package 10 of the present embodiment is formed.

  In addition, the semiconductor package 10 of this embodiment may have two or more insulating layers and metal plating layers. For example, the molecular bonding layer 60 is newly formed on the surface of the metal plating layer 50 and the exposed surface of the insulating layer 40. Thereafter, a second insulating layer 70 is formed on the surface of the metal plating layer 50 and the exposed surface of the insulating layer 40 via the molecular bonding layer 60 (FIG. 17). An opening 75 is formed by etching an arbitrary portion of the second insulating layer 70 formed on the metal plating layer 50 (FIG. 18). Thereafter, a second metal plating layer (for example, the second rewiring layer 80) is formed on the metal plating layer 50 and the second insulating layer 70 via the molecular bonding layer 220.

  By performing the above processing, in the semiconductor package 10 of the present embodiment, the insulating layer and the metal plating layer can be stacked via the molecular bonding layer.

  The molecular bonding agent that forms the molecular bonding layer 210 and the molecular bonding agent that forms the molecular bonding layers 60 and 220 may be the same or different.

  The semiconductor package 10 according to the embodiment described above includes the semiconductor chip 20, the molecular bonding layer 210, and the metal plating layer 50. The molecular bonding layer 210 is bonded to each of the insulating layer 40 and the metal plating layer 50 through a chemical bond (that is, a covalent bond). Therefore, the adhesion between the insulating layer 40 and the metal plating layer 50 can be improved. In addition, by providing the molecular bonding layer 210 between the conductive pad 21 of the semiconductor chip 20 and the metal plating layer 50, the adhesion between the semiconductor chip 20 and the metal plating layer 50 is further improved, and It is possible to appropriately ensure electrical connection between the conductive pad 21 and the metal plating layer 50.

  Moreover, in the manufacturing method of the semiconductor package 10 of the embodiment, the first metal plating layer 55 (for example, a seed layer) can be formed by using electroless plating without using a vapor deposition method such as sputtering. Accordingly, since the surface of the underlying insulating layer 40 can be metallized without being roughened, a seed layer having a fine pattern can be formed. In addition, the manufacturing cost can be reduced and the production efficiency can be improved.

(Third embodiment)
Next, a third embodiment will be described. The configuration of the semiconductor package 10 of the present embodiment is substantially the same as the configuration of the semiconductor package 10 of the second embodiment. This embodiment is different from the second embodiment in that at least a part of the metal plating layer 50 is formed by spray plating. The configurations other than those described below are the same as those in the second embodiment.

  For example, in the present embodiment, the first metal plating layer 55 is formed by spray plating. In the spray plating process, a metal ion solution containing a first metal 50m (for example, a seed metal 55m) and a reducing agent solution are sprayed. The spray plating process is, for example, autocatalytic electroless plating.

  For example, the surface of the molecular bonding layer 210 is subjected to a first metal plating process using a first metal 50m (for example, a seed metal 55m). Thereby, the first metal plating layer 55 is formed on the molecular bonding layer 210. The first metal plating layer 55 is a seed layer having a growth starting point of the metal plating layer 50 including the second metal plating layer 56 to be formed later. In the present embodiment, the first metal plating process is a spray plating process, and is performed by spraying a metal ion solution and a reducing agent solution onto the surface of the molecular bonding layer 210.

  The metal ion solution is a solution containing metal ions derived from the first metal 50m (for example, the seed metal 55m). The first metal 50m (for example, the seed metal 55m) of the present embodiment is a metal having an autocatalytic action such as palladium, copper, silver, nickel, lead, or the like. Furthermore, the first metal 50m (for example, the seed metal 55m) is at least one selected from the group consisting of copper, silver, and nickel. Examples of such metal ions include copper ions, silver ions, and nickel ions. Examples of the solvent that dissolves metal ions include polar solvents, and among these, water is preferable. The concentration of the metal ion solution is not particularly limited, and a known concentration can be adopted.

  The temperature of a metal ion solution will not be specifically limited if it is a practical range, For example, it is preferable that they are 20 degreeC or more and 40 degrees C or less. When the temperature of the metal ion solution is equal to or higher than the lower limit, a metal ion solution in which metal ions are well dissolved in a solvent can be obtained. When the concentration of the metal ion solution is not more than the above upper limit value, the evaporation of the solvent can be effectively prevented.

  The reducing agent solution is a solution containing a reducing agent that reduces metal ions and deposits metal. As the reducing agent, a known compound corresponding to the metal ion to be used can be used. When copper ions or silver ions are used as metal ions, it is preferable to use formaldehyde as a reducing agent because autocatalytic action is obtained. Moreover, when using nickel ion as a metal ion, it is preferable to use a phosphinate or a tetrahydroborate as a reducing agent because an autocatalytic action is obtained. Examples of the solvent that dissolves the reducing agent include polar solvents, and among these, water is preferable.

  The concentration of the reducing agent solution is not particularly limited, and a known concentration can be adopted.

  If the temperature of a reducing agent solution is a practical range, it will not specifically limit, For example, it is preferable that it is 20 to 40 degreeC. When the temperature of the reducing agent solution is equal to or higher than the lower limit, a reducing agent solution in which the reducing agent is well dissolved in a solvent can be obtained. When the concentration of the reducing agent solution is not more than the above upper limit, evaporation of the solvent can be effectively prevented.

  The autocatalytic action means that a metal produced by reducing metal ions by a reducing agent acts as a catalyst in the oxidation of the reducing agent. In the present embodiment, it is preferable that the metal plating treatment is autocatalytic electroless plating because production efficiency is further improved.

  To at least one of the metal ion solution and the reducing agent solution, a buffering agent such as acetic acid, a complexing agent such as tartaric acid, and a stabilizer such as cyanide may be added as additives. Examples of the buffering agent include a mixture of acetic acid and acetate. Examples of the complexing agent include tartaric acid, citric acid, malic acid, pyrophosphoric acid and the like. Examples of the stabilizer include cyan compounds and bipyridine compounds.

  By adding these additives, the long-term storage stability of the metal ion solution or the reducing agent solution is improved. In addition, the metal plating layer 50 can be stably formed.

  The method for spraying the metal ion solution and the reducing agent solution is not particularly limited. For example, a method of spraying a metal ion solution and a reducing agent solution from two directions toward the same location on the surface of the molecular bonding layer 210 using two spray devices can be mentioned. By using such a spraying method, the metal ion solution and the reducing agent solution can be sprayed at the same time to perform the metal plating process on the molecular bonding layer 210.

  The second metal plating process and the subsequent steps in this embodiment are the same as those in the second embodiment. In the present embodiment, the rewiring metal 56m that forms the second metal plating layer 56 may be the same as the seed metal 55m that forms the first metal plating layer 56. The second metal plating layer 56 is formed by, for example, an electroless plating process or an electrolytic plating process different from the spray plating process. For example, the second metal plating layer 56 is formed by an electrolytic plating process.

  In the semiconductor device manufacturing method of the embodiment described above, the first metal plating layer 55 is formed using electroless plating. Thereby, a fine wiring pattern can be formed without roughening the surface of the molecular bonding layer 210 or the semiconductor chip 20 as a base.

  Moreover, in the manufacturing method of the semiconductor package 10 of the embodiment, the metal plating process is performed by spraying the reducing agent solution and the metal ion solution, respectively, so that the metal plating layer 50 is used without using a seed metal such as palladium. Can be formed. Since seed metals such as palladium are generally expensive, the manufacturing cost can be reduced in the method of manufacturing the semiconductor package 10 of the embodiment. In addition, silver ion, which is one of the preferred metal ions, is excellent in removability as compared with palladium. Therefore, when the silver ion solution is used, the production efficiency of the semiconductor package 10 can be further improved.

  In the method for manufacturing the semiconductor package 10 of the present embodiment, the insulating layer 40 and the metal plating layer 50 are bonded together by the molecular bonding layer 210. Therefore, the adhesiveness inside the semiconductor package 10 is excellent. Further, it is not necessary to perform a zincate treatment for the purpose of improving the adhesion to the conductive pad 21 formed of, for example, aluminum or an aluminum alloy.

(Fourth embodiment)
Next, a fourth embodiment will be described with reference to FIGS. This embodiment is different from the third embodiment in that the entire metal plating layer 50 is formed by spray plating. The configurations other than those described below are the same as those in the third embodiment.

  FIG. 19 is a cross-sectional view showing the semiconductor package 10 of the present embodiment.

  As shown in FIG. 19, in the semiconductor package 10 of the present embodiment, one metal plating layer 50 is provided instead of the first metal plating layer 55 and the second metal plating layer 56. In other words, the metal plating layer 50 of this embodiment does not have a seed layer.

  Next, an example of a method for manufacturing the semiconductor package 10 of the present embodiment will be described. In addition, the process shown below is a process corresponding to (c) to (f) in FIG. 4, for example.

  First, the semiconductor chip 20 having the semiconductor substrate 22, the conductive pads 21, and the insulating film 23 is prepared (FIG. 20). Next, the insulating material 40m is supplied to the surface of the semiconductor chip 20, whereby the insulating layer 40 is provided. Next, an opening 45 (that is, a through hole) is formed in the insulating layer 40 (FIG. 21). The opening 45 is provided in a region corresponding to the conductive pad 21 of the semiconductor chip 20 and penetrates the insulating layer 40. For example, the opening 45 is formed by etching the insulating layer 40.

  Next, the surface 40a of the insulating layer 40 different from the opening 45, the inner surface 45a of the opening 45, and the surface 21a of the conductive pad 21 exposed in the opening 45 are covered with a molecular bonding agent, whereby the molecular bonding layer 210 is covered. Is formed (FIG. 22). The steps up to here are the same as those in the second embodiment.

  In this embodiment, a metal plating process is performed on the surface of the molecular bonding layer 210. The metal plating process of this embodiment is performed by the spray plating process similarly to the 1st metal plating process of 3rd Embodiment. That is, the metal ion solution and the reducing agent solution containing the first metal 50m are respectively sprayed. The spray plating process has a higher deposition rate of the metal plating layer than other types of electroless plating. For this reason, all of the metal plating layer 50 can be performed by spray plating. Further, even when the metal plating layer 50 is formed by spray plating, the metal bonding layer 210 is provided between the metal plating layer 50 and the insulating layer 40, so that the metal plating layer 50 exists stably. . Further, the production efficiency of the semiconductor package 10 can be improved as compared with the electrolytic plating.

  Next, a resist film R is formed so as to cover the metal plating layer 50 (FIG. 24). Next, unnecessary portions of the metal plating layer 50 are removed by etching (FIG. 25). Thereby, the metal plating layer 50 including the conducting wire 51 and the first via 52 is formed on the insulating layer 40 (FIG. 26).

  Although several embodiments have been described, these embodiments have been presented by way of example and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope of the present invention and the gist thereof, and are also included in the invention described in the claims and the equivalent scope thereof.

  DESCRIPTION OF SYMBOLS 10 ... Semiconductor package, 20 ... Semiconductor chip, 30 ... Mold resin part, 60 ... Molecular junction layer.

Claims (20)

A conductive part;
An insulating layer having an exposed portion exposing at least a part of the conductive portion;
A molecular bonding layer provided at least on the surface of the insulating layer;
A metal plating layer bonded to the surface of the insulating layer by the molecular bonding layer;
With
At least a part of the molecular bonding layer is chemically bonded to an insulating material included in the insulating layer,
At least a part of the molecular bonding layer is chemically bonded to the first metal contained in the metal plating layer,
The metal plating layer is electrically connected to the conductive portion through the exposed portion,
Semiconductor device. The semiconductor device according to claim 1, wherein the molecular bonding layer includes a molecular bonding body that is covalently bonded to both the insulating material and the first metal. The molecular bonding layer is also provided on the surface of the conductive portion exposed at the exposed portion,
At least a part of the molecular bonding layer is chemically bonded to the second metal contained in the conductive part.
The semiconductor device according to claim 1. The semiconductor device according to claim 3, wherein the molecular bonding layer includes a molecular bonding body that is covalently bonded to both the first metal and the second metal. The molecular bonding layer includes a first portion provided on a surface of the insulating layer different from the exposed portion, a second portion provided on an inner surface of the exposed portion, and the conductive portion exposed on the exposed portion. A third portion provided on the surface,
The semiconductor device according to claim 1, wherein the metal plating layer is bonded to the first portion, the second portion, and the third portion of the molecular bonding layer. The metal plating layer is provided along the surface of the insulating layer different from the exposed portion and joined to the first portion of the molecular bonding layer, and the molecular bonding layer is provided on the exposed portion. The semiconductor device according to claim 5, further comprising a via joined to the second part and the third part. The semiconductor device according to claim 6, wherein the conductive portion is a conductive pad of a semiconductor chip. The semiconductor device according to claim 7, wherein the metal plating layer is a rewiring layer including a conductive wire through which at least one of an electric signal from the semiconductor chip and an electric signal to the semiconductor chip flows. The semiconductor device according to claim 1, wherein the molecular bonding layer includes a triazine dithiol residue. A molecular bonding layer is formed by applying a molecular bonding agent to the surface of the insulating layer having an opening that exposes at least a part of the conductive portion,
At least a surface of the molecular bonding layer is subjected to a metal plating process to form a metal plating layer that includes the first metal that is electrically connected to the conductive portion through the opening and chemically bonded to the molecular bonding layer. To
A method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device according to claim 10, wherein the metal plating process includes an electroless plating process. The method of manufacturing a semiconductor device according to claim 10, wherein the metal plating process includes a spray plating process in which a metal ion solution containing the first metal and a reducing agent solution are respectively sprayed. The method for manufacturing a semiconductor device according to claim 12, wherein the spray plating process is self-catalytic electroless plating. The first metal is at least one selected from the group consisting of copper, silver and nickel.
A method for manufacturing a semiconductor device according to claim 13. The method of manufacturing a semiconductor device according to claim 10, wherein the molecular bonding layer is formed by applying the molecular bonding agent to a surface of the conductive portion exposed to the opening as well as a surface of the insulating layer. The metal plating layer is a rewiring layer including a conducting wire through which an electric signal flows,
To form the metal plating layer,
Forming a seed layer serving as a growth starting point of the rewiring layer by performing a first metal plating process on the surface of at least the molecular bonding layer using the first metal;
Forming a body portion of the redistribution layer on the seed layer by performing a second metal plating process on the seed layer;
A method for manufacturing a semiconductor device according to claim 10. The method for manufacturing a semiconductor device according to claim 16, wherein the first metal plating process is an electroless plating process. The method for manufacturing a semiconductor device according to claim 16, wherein the first metal plating process is a spray plating process in which a metal ion solution and a reducing agent solution containing the first metal are respectively sprayed. The method of manufacturing a semiconductor device according to claim 10, wherein the molecular bonding agent is a triazine derivative. The triazine derivative is a compound represented by the general formula (C1).
(C1)

(In the formula, R represents a hydrocarbon group or a hydrocarbon group in which a hetero atom or a functional group may intervene, X represents a hydrogen atom or a hydrocarbon group, Y represents an alkoxy group,
Z represents a thiol group, an amino group or an azide group which may form a salt, or a hydrocarbon group which may be intervened by a hetero atom or a functional group, n1 is an integer from 1 to 3, n2 is an integer from 1 to 2. )
A method for manufacturing a semiconductor device according to claim 19.

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