JP2018037451A - 光電変換膜および光電変換装置 - Google Patents
光電変換膜および光電変換装置 Download PDFInfo
- Publication number
- JP2018037451A JP2018037451A JP2016166974A JP2016166974A JP2018037451A JP 2018037451 A JP2018037451 A JP 2018037451A JP 2016166974 A JP2016166974 A JP 2016166974A JP 2016166974 A JP2016166974 A JP 2016166974A JP 2018037451 A JP2018037451 A JP 2018037451A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- component
- film
- conversion film
- zinc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- 239000002105 nanoparticle Substances 0.000 claims abstract description 49
- 239000011701 zinc Substances 0.000 claims abstract description 32
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 30
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims abstract description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 28
- 239000003446 ligand Substances 0.000 claims abstract description 25
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 19
- 239000011593 sulfur Substances 0.000 claims abstract description 19
- 238000001420 photoelectron spectroscopy Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 11
- 239000002994 raw material Substances 0.000 description 13
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 12
- 239000005083 Zinc sulfide Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 229910052984 zinc sulfide Inorganic materials 0.000 description 11
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- ROMPPAWVATWIKR-UHFFFAOYSA-N 4-[3-(4-chlorophenyl)-1,2,4-oxadiazol-5-yl]butanoic acid Chemical compound O1C(CCCC(=O)O)=NC(C=2C=CC(Cl)=CC=2)=N1 ROMPPAWVATWIKR-UHFFFAOYSA-N 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 6
- 239000002096 quantum dot Substances 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011259 mixed solution Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000005119 centrifugation Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- UNILWMWFPHPYOR-KXEYIPSPSA-M 1-[6-[2-[3-[3-[3-[2-[2-[3-[[2-[2-[[(2r)-1-[[2-[[(2r)-1-[3-[2-[2-[3-[[2-(2-amino-2-oxoethoxy)acetyl]amino]propoxy]ethoxy]ethoxy]propylamino]-3-hydroxy-1-oxopropan-2-yl]amino]-2-oxoethyl]amino]-3-[(2r)-2,3-di(hexadecanoyloxy)propyl]sulfanyl-1-oxopropan-2-yl Chemical compound O=C1C(SCCC(=O)NCCCOCCOCCOCCCNC(=O)COCC(=O)N[C@@H](CSC[C@@H](COC(=O)CCCCCCCCCCCCCCC)OC(=O)CCCCCCCCCCCCCCC)C(=O)NCC(=O)N[C@H](CO)C(=O)NCCCOCCOCCOCCCNC(=O)COCC(N)=O)CC(=O)N1CCNC(=O)CCCCCN\1C2=CC=C(S([O-])(=O)=O)C=C2CC/1=C/C=C/C=C/C1=[N+](CC)C2=CC=C(S([O-])(=O)=O)C=C2C1 UNILWMWFPHPYOR-KXEYIPSPSA-M 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- DPKBAXPHAYBPRL-UHFFFAOYSA-M tetrabutylazanium;iodide Chemical compound [I-].CCCC[N+](CCCC)(CCCC)CCCC DPKBAXPHAYBPRL-UHFFFAOYSA-M 0.000 description 3
- VYMPLPIFKRHAAC-UHFFFAOYSA-N 1,2-ethanedithiol Chemical compound SCCS VYMPLPIFKRHAAC-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229940125810 compound 20 Drugs 0.000 description 1
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- JAXFJECJQZDFJS-XHEPKHHKSA-N gtpl8555 Chemical compound OC(=O)C[C@H](N)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](C(C)C)C(=O)N1CCC[C@@H]1C(=O)N[C@H](B1O[C@@]2(C)[C@H]3C[C@H](C3(C)C)C[C@H]2O1)CCC1=CC=C(F)C=C1 JAXFJECJQZDFJS-XHEPKHHKSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- OUMZKMRZMVDEOF-UHFFFAOYSA-N tris(trimethylsilyl)phosphane Chemical compound C[Si](C)(C)P([Si](C)(C)C)[Si](C)(C)C OUMZKMRZMVDEOF-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- OBOMINCSAYZPGH-UHFFFAOYSA-L zinc;undecanoate Chemical compound [Zn+2].CCCCCCCCCCC([O-])=O.CCCCCCCCCCC([O-])=O OBOMINCSAYZPGH-UHFFFAOYSA-L 0.000 description 1
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
オール(1,2-Ethanedithiol(EDT))が用いられている(例えば、非特許文献1、2を参照)。
りも亜鉛成分5の方を流れやすくなる。
ン原液を290μL(1mmol)、およびオクタデセンを5mL、それぞれ3つ口フラスコに投入し、この場合も撹拌回転子の回転数を400rpmに設定して5分間の撹拌を行った。
導体ナノ粒子膜を作製する場合には、リン化インジウムの半導体ナノ粒子を含んだゾルをガラス基板の酸化亜鉛の膜上に塗布した後に、硫黄を含んだゾルを塗布し、その後に、電極を上記と同様の条件によって形成した。こうして、リン化インジウムの半導体ナノ粒子を複数個有し、その表面を含む粒界に、亜鉛成分、炭素成分および硫黄成分を含む半導体ナノ粒子を集積させて光電変換膜とする光電変換装置を作製した(試料2)。
1・・・・・・・・・・・半導体ナノ粒子
3・・・・・・・・・・・リガンド相
5・・・・・・・・・・・亜鉛成分
7・・・・・・・・・・・炭素成分
9・・・・・・・・・・・欠陥
11・・・・・・・・・・硫黄成分
13・・・・・・・・・・硫化亜鉛化合物
20・・・・・・・・・・光電変換装置
21・・・・・・・・・・基板
23・・・・・・・・・・透明導電膜
25・・・・・・・・・・集電層
27・・・・・・・・・・金属膜
Claims (5)
- リン化インジウムの半導体ナノ粒子を複数個有し、該半導体ナノ粒子の表面に、亜鉛成分とともに、炭素成分を含むリガンド相を備えていることを特徴とする光電変換膜。
- 前記リガンド相は、さらに硫黄成分を含んでいることを特徴とする請求項1に記載の光電変換膜。
- 前記亜鉛成分および前記硫黄成分は、前記リガンド相中に、原子比で等量含まれていることを特徴とする請求項2に記載の光電変換膜。
- 光電子分光分析から求められる前記リガンド相における前記炭素成分の含有比率が30〜60原子%であることを特徴とする請求項1乃至3のうちいずれかに記載の光電変換膜。
- 請求項1乃至4のうちいずれかに記載の光電変換膜が基板上に積層されていることを特徴とする光電変換装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016166974A JP6687483B2 (ja) | 2016-08-29 | 2016-08-29 | 光電変換膜および光電変換装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016166974A JP6687483B2 (ja) | 2016-08-29 | 2016-08-29 | 光電変換膜および光電変換装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018037451A true JP2018037451A (ja) | 2018-03-08 |
JP6687483B2 JP6687483B2 (ja) | 2020-04-22 |
Family
ID=61567610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016166974A Expired - Fee Related JP6687483B2 (ja) | 2016-08-29 | 2016-08-29 | 光電変換膜および光電変換装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6687483B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021075495A1 (ja) * | 2019-10-15 | 2021-04-22 | 国立大学法人京都大学 | 導電膜、分散体とこれらの製造方法、及び導電膜を含むデバイス |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011037042A1 (ja) * | 2009-09-28 | 2011-03-31 | 株式会社 村田製作所 | ナノ粒子材料の製造方法、及びナノ粒子材料、並びに光電変換デバイス |
JP2011080067A (ja) * | 2009-10-09 | 2011-04-21 | Samsung Electronics Co Ltd | ナノ複合粒子及びその製造方法、並びにナノ複合粒子を含む素子 |
WO2012165117A1 (ja) * | 2011-05-30 | 2012-12-06 | 富士フイルム株式会社 | InPナノ粒子の合成方法およびナノ粒子 |
US20130026445A1 (en) * | 2011-07-26 | 2013-01-31 | Farzad Parsapour | Quantum dot optoelectronic device and methods therefor |
JP2014093327A (ja) * | 2012-10-31 | 2014-05-19 | Fujifilm Corp | 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス |
-
2016
- 2016-08-29 JP JP2016166974A patent/JP6687483B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011037042A1 (ja) * | 2009-09-28 | 2011-03-31 | 株式会社 村田製作所 | ナノ粒子材料の製造方法、及びナノ粒子材料、並びに光電変換デバイス |
CN102576747A (zh) * | 2009-09-28 | 2012-07-11 | 株式会社村田制作所 | 纳米粒子材料的制造方法、纳米粒子材料以及光电转换器件 |
JP2011080067A (ja) * | 2009-10-09 | 2011-04-21 | Samsung Electronics Co Ltd | ナノ複合粒子及びその製造方法、並びにナノ複合粒子を含む素子 |
WO2012165117A1 (ja) * | 2011-05-30 | 2012-12-06 | 富士フイルム株式会社 | InPナノ粒子の合成方法およびナノ粒子 |
US20130026445A1 (en) * | 2011-07-26 | 2013-01-31 | Farzad Parsapour | Quantum dot optoelectronic device and methods therefor |
JP2014093327A (ja) * | 2012-10-31 | 2014-05-19 | Fujifilm Corp | 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021075495A1 (ja) * | 2019-10-15 | 2021-04-22 | 国立大学法人京都大学 | 導電膜、分散体とこれらの製造方法、及び導電膜を含むデバイス |
CN114651312A (zh) * | 2019-10-15 | 2022-06-21 | 国立大学法人京都大学 | 导电膜、分散体、它们的制造方法以及包含导电膜的器件 |
Also Published As
Publication number | Publication date |
---|---|
JP6687483B2 (ja) | 2020-04-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Akin | Hysteresis-free planar perovskite solar cells with a breakthrough efficiency of 22% and superior operational stability over 2000 h | |
Peng et al. | Alloying strategy in Cu–In–Ga–Se quantum dots for high efficiency quantum dot sensitized solar cells | |
Zu et al. | Constructing the electronic structure of CH3NH3PbI3 and CH3NH3PbBr3 perovskite thin films from single-crystal band structure measurements | |
Peng et al. | Achieving ultrafast hole transfer at the monolayer MoS2 and CH3NH3PbI3 perovskite interface by defect engineering | |
Xu et al. | Surface engineering of ZnO nanostructures for semiconductor‐sensitized solar cells | |
Kobosko et al. | Indium-rich AgInS2–ZnS quantum dots—Ag-/Zn-dependent photophysics and photovoltaics | |
Ren et al. | Amorphous TiO2 buffer layer boosts efficiency of quantum dot sensitized solar cells to over 9% | |
Lesnyak et al. | Alloyed copper chalcogenide nanoplatelets via partial cation exchange reactions | |
Varrla et al. | Large-scale production of size-controlled MoS2 nanosheets by shear exfoliation | |
Van Der Stam et al. | Luminescent CuInS2 Quantum Dots by Partial Cation Exchange in Cu2–x S Nanocrystals | |
Lim et al. | Stacking of two-dimensional materials in lateral and vertical directions | |
Han et al. | Synthesis and shape-tailoring of copper sulfide/indium sulfide-based nanocrystals | |
Zhang et al. | Highly efficient Zn–Cu–In–Se quantum dot-sensitized solar cells through surface capping with ascorbic acid | |
Ip et al. | A two-step route to planar perovskite cells exhibiting reduced hysteresis | |
Castro et al. | Nanocrystalline chalcopyrite materials (CuInS2 and CuInSe2) via low-temperature pyrolysis of molecular single-source precursors | |
Zheng et al. | Self-assembly of the lateral In2Se3/CuInSe2 heterojunction for enhanced photodetection | |
Gao et al. | Improvement in carrier transport properties by mild thermal annealing of PbS quantum dot solar cells | |
Liu et al. | Valence selectivity of cation incorporation into covellite CuS nanoplatelets | |
Wang et al. | Upconversion photovoltaic effect of WS2/2D perovskite heterostructures by two-photon absorption | |
Patel et al. | One-dimensional/two-dimensional/three-dimensional dual heterostructure based on MoS2-modified ZnO-heterojunction diode with silicon | |
Zhang et al. | Antimonene quantum dot-based solid-state solar cells with enhanced performance and high stability | |
JP2013136498A (ja) | 量子ドット含有チタン化合物及びその製造方法、並びに該量子ドット含有チタン化合物を用いた光電変換素子 | |
Nie et al. | Efficient antimony‐based solar cells by enhanced charge transfer | |
Dorman et al. | Control of recombination pathways in TiO2 nanowire hybrid solar cells using Sn4+ dopants | |
Jana et al. | Negative Thermal Quenching and Size‐Dependent Optical Characteristics of Highly Luminescent Phosphorene Nanocrystals |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190221 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200121 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200128 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200131 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200303 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200402 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6687483 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |