JP2018032846A - 過酷な媒体用途の半導体センサアセンブリ - Google Patents
過酷な媒体用途の半導体センサアセンブリ Download PDFInfo
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- JP2018032846A JP2018032846A JP2017120532A JP2017120532A JP2018032846A JP 2018032846 A JP2018032846 A JP 2018032846A JP 2017120532 A JP2017120532 A JP 2017120532A JP 2017120532 A JP2017120532 A JP 2017120532A JP 2018032846 A JP2018032846 A JP 2018032846A
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- processing device
- sensor assembly
- resistant material
- sensor
- bond pad
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Abstract
Description
−腐食環境、例えば排気ガス環境中の腐食性成分、例えば排気ガスによって腐食され得る材料の少なくとも1つの第1のボンドパッドを備える処理デバイスと、
−少なくとも1つの第2のボンドパッドを備えるセンサデバイスであって、第2のボンドパッドは、第1の耐腐食性材料よりなる、及び/又は第1の耐腐食性材料によって被覆されている、センサデバイスと、
−処理デバイスの少なくとも1つの第1のボンドパッドとセンサデバイスの少なくとも1つの第2のボンドパッドとの間の信号接続を行うための少なくとも1つのボンディングワイヤと、を備える。
処理デバイスは、第2の耐腐食性材料、例えば耐腐食性プラスチック材料によって部分的にオーバーモールドされており、かつ耐腐食性材料内の空洞に部分的に曝露されている。センサデバイスは、空洞内に存在する。さらに、処理デバイスとセンサデバイスとの間の信号接続を空洞内で物理的に行うことを可能にするために再配信層が提供される一方で、第2の耐腐食性材料は、少なくとも1つの第1のボンドパッドを被覆する。
−腐食性環境、例えば排気ガス環境中で、腐食性ガス、例えば排気ガスによって腐食され得る材料の少なくとも1つの第1のボンドパッドを備える処理デバイスを提供する工程と、
−少なくとも1つの第2のボンドパッドを備えるセンサデバイスを提供する工程であって、その第2のボンドパッドは、第1の耐腐食性材料からなり、及び/又は第1の耐腐食性材料で被覆されている、工程と、
−少なくとも1つのボンディングワイヤによって、処理デバイスの少なくとも1つの第1のボンドパッドとセンサデバイスの少なくとも1つの第2のボンドパッドとの間の信号接続を行う工程と、
−処理デバイスを第2の耐腐食性材料によって部分的にオーバーモールドする工程であって、このようにして処理デバイスを第2の耐腐食性材料内の空洞に部分的に曝露させる、工程と、
−空洞内にセンサデバイスを実装する工程と、
−処理デバイスを部分的にオーバーモールドする前に、処理デバイスとセンサデバイスとの間の信号接続を空洞内で物理的に行うことを可能にするための再配信層を提供する一方で、第2の耐腐食性材料が少なくとも1つの第1のボンドパッドを被覆する工程と、を含む。
i)センサチップと処理チップを単一の基板、例えばリードフレームに実装することによって、処理チップを排気流路に近づけること。排気流路に近いほど、腐食性成分又は粒子の濃度が高くなるので、処理チップを腐食性環境の近くに移動させることは反直感的である。
ii)処理チップのアルミニウム接触パッドの一部又は全部を、少なくとも0.6μm、例えば少なくとも0.8μm、例えば少なくとも1.0μm、例えば少なくとも2.0μm、例えば少なくとも2.5μm、例えば少なくとも3.0μm、例えば少なくとも4.0μm、例えば少なくとも5.0μm、の厚さを有する耐腐食性材料、例えば純金の層の比較的厚い電気めっき、又はスパッタ金属被覆(OPM)で被覆すること。これは、粒子が金層を通って拡散する危険性を大幅に減少させる。
iii)処理デバイスとOPMの一部を好適なオーバーモールド材料、例えばプラスチックでオーバーモールドし、一方でセンサデバイス(又はその少なくとも一部)を排気ガスに曝露されたままにする。本発明者らは、このように、プラスチックパッケージの外側の環境からアルミニウムパッドに達するための拡散経路の長さを有効に増加させることができることを見出した。
−基板、例えばリードフレームを提供する工程171と、
−アルミニウムパッド及びアルミニウムパッドの頂部のOPM17、18を有し、OPMは第1の耐腐食性材料からなる処理デバイス10´を提供する工程であって、例えば、アルミニウムパッド11、12の上にスパッタリング又は電気めっきによって堆積された、例えば5μmの厚さを有する金層を有するCMOSチップを提供する工程172と、
−処理デバイス10´を、例えば半田付けによって又は接着によって基板に実装する工程173と、
−第3の耐腐食性材料、例えば金で作製されたワイヤボンド35を提供することによって、処理デバイス10´を基板にワイヤボンディングする工程174と、
−上述した様態で(すなわち、少なくともOPM17を被覆し、OPM18の少なくとも第1の部分18a及び第2の部分18bの一部を被覆し、一方センサデバイスを実装するための開口又は空洞の空間を残すことによって)、処理デバイス10´を部分的にオーバーモールドする工程175と、
−例えば好適なパッシベーション層を有し、第2の耐腐食性材料、例えば金又は白金又はタンタルで作製されたパッドを有して、排ガス環境に曝露されるのに好適な技術で作製された、センサデバイスを提供する工程176と、
−例えば処理デバイス10´の頂部に(図13又は図16を参照)、又は処理デバイス10´に近接して(図15を参照)、例えば半田付けによって又は接着によってセンサデバイスを前記空間又は前記空洞に実装する工程177と、
−第3の耐腐食性材料、例えば金で作製されたワイヤボンド34を提供することによって、処理デバイス10´を基板に及びセンサチップにワイヤボンディングする工程178と、を含む。
本方法は、任意選択的に、センサデバイス20、20´の頂部にゲルコーティングを追加するさらなる工程179を含んでもよい。
−処理デバイス10、例えばアルミニウムパッド11、12を有するCMOSデバイスを提供する工程181と、
−任意選択的に、アルミニウムパッド11、12の頂部にシード層15、前記シード層は、例えばTiW/Auを含んでもよい、を提供する工程182と、
−第1の耐腐食性材料、好ましくは貴金属又は貴金属を含有する合金でスパッタリング又は電気めっきによって、オーバーパッドメタライゼーション層OPM17、18を適用する工程183と、
−任意選択的に、OPM18の頂部に追加のパッシベーション層40(例えば、ポリイミド)を追加する工程であって、かつOPM18へのアクセスを可能にするための開口41を作製する、工程184と、を含んでもよい。
11:処理デバイスのボンドパッド(局所部分のみを有するOPMで被覆される)、
12:処理デバイスのボンドパッド(局所+中間+遠位部分を有するOPMで被覆される)、
13:処理デバイスの基板、15:シード層、16:再配信パッド、
17:オーバーパッドメタライゼーション(局所部分のみを有するOPM)、
18:オーバーパッドメタライゼーション(局所+中間+遠位部分を有するOPM)、
10′:アルミニウムパッドの頂部にOPMを備えた処理デバイス、
20:センサデバイス(例えば、MEMs)、21:(第2の)パッド、22:センサデバイスの基板、
23:膜、24:センサデバイスの空洞、30:センサアセンブリ、31:パッケージピン、
32:プラスチックモールド合成物、33:基板(例えば、リードフレームのダイパドル)、
34:ボンディングワイヤ(処理デバイスとセンサデバイスとの間の)、
35:ボンディングワイヤ(処理デバイスと基板との間の)、36:モールド空洞、
37:ダイ取付(例えば、接着剤)、38:ゲルコート、40:追加のパッシベーション層、
41:パッシベーション開口(ワイヤボンド用)。
Claims (17)
- 腐食性環境で使用するための半導体センサアセンブリ(30、30´、30´´)であって、
−前記腐食性環境内の腐食性成分によって腐食され得る材料の少なくとも1つの第1のボンドパッド(12)を備える処理デバイス(10´)と、
−少なくとも1つの第2のボンドパッド(21、21´)を備えるセンサデバイス(20、20´)であって、前記第2のボンドパッドは、第1の耐腐食性材料よりなる、及び/又は第1の耐腐食性材料によって被覆されている、センサデバイスと、
−前記処理デバイスの前記少なくとも1つの第1のボンドパッドと前記センサデバイスの前記少なくとも1つの第2のボンドパッドとの間の信号接続を行うための少なくとも1つのボンディングワイヤ(34)と、を備え、
前記処理デバイス(10´)は、第2の耐腐食性材料(32)によって部分的にオーバーモールドされており、かつ前記耐腐食性材料(32)内の空洞(36)に部分的に曝露され、前記センサデバイス(20、20´)は、前記空洞(36)内に存在し、
前記処理デバイス(10´)と前記センサデバイス(20、20´)との間の信号接続を前記空洞(36)内で物理的に行うことを可能にするために再配信層(18)が提供される一方で、前記第2の耐腐食性材料(32)は、前記少なくとも1つの第1のボンドパッド(12)を被覆する、半導体センサアセンブリ(30、30´、30´´)。 - 前記再配信層(18)は、オーバーパッドメタライゼーションを備える、請求項1に記載の半導体センサアセンブリ(30、30´、30´´)。
- 前記オーバーパッドメタライゼーションは、第3の耐腐食性材料からなり、前記オーバーパッドメタライゼーション(18)は、近位部分(18a)及び遠位部分(18c)を備える形状を有し、前記遠位部分(18c)は、前記近位部分(18a)から距離(L2)に位置し、中間部分(18b)を介して前記近位部分(18a)に接続され、前記近位部分(18a)は、前記少なくとも1つの第1のボンドパッド(12)を被覆する形状を有する、請求項2に記載の半導体センサアセンブリ(30、30´、30´´)。
- 前記ボンディングワイヤは、前記オーバーパッドメタライゼーション(18)の前記遠位部分(18c)に接続された第1の端部と、前記センサデバイス(20、20´)の前記少なくとも1つの第2のボンドパッド(21、21´)に接続された第2の端部と、を有し、前記ボンディングワイヤ(34)は、第4の耐腐食性材料からなる、請求項3に記載の半導体センサアセンブリ(30、30´、30´´)。
- 前記第1の耐腐食性材料及び/又は前記第3の耐食性材料及び/又は前記第4の耐腐食性材料は、以下の選択肢:
−貴金属、
−金のみ、
−白金のみ、
−Au及びPtのみからなる混合物、
−Au又はPtを含有する合金、
のうちの1つから個別に選択される、請求項1〜4のいずれか1項に記載の半導体センサアセンブリ(30、30´、30´´)。 - 前記センサデバイス(20、20´)は、基板(33´)の頂部に、かつ前記処理デバイス(10´)に近接して実装される、請求項1〜5のいずれか1項に記載の半導体センサアセンブリ(30´)。
- 前記センサデバイス(20、20´)は、前記処理デバイス(10´)の頂部に位置する、請求項1〜5のいずれか1項に記載の半導体センサアセンブリ(30、30´´)。
- 前記再配信層(18)の頂部にパッシベーション層(40)をさらに備える、請求項1〜7のいずれか1項に記載の半導体センサアセンブリ(30、30´、30´´)。
- 前記センサデバイス(20、20´)の頂部に適用されたゲル(38)をさらに備える、請求項1〜8のいずれか1項に記載の半導体センサアセンブリ(30、30´、30´´)。
- 基板を備え、前記基板(33、33´、33´´)はリードフレームである、請求項1〜9のいずれか1項に記載の半導体センサアセンブリ(30、30´、30´´)。
- 前記処理デバイス(10´)は、第2のボンディングワイヤ(35)を介して基板(33、33´、33´´)に接続された第3のボンドパッド(11)をさらに備え、前記第2のボンディングワイヤ(35)も前記第2の耐腐食性材料(32)によって封止されている、請求項1〜10のいずれか1項に記載の半導体センサアセンブリ(30、30´、30´´)。
- 前記処理デバイス(10´)は、CMOSチップであり、前記センサデバイスは異なる技術で作製されている、請求項1〜11のいずれか1項に記載の半導体センサアセンブリ(30、30´、30´´)。
- 前記CMOSチップは、マイクロプロセッサ及び不揮発性メモリを備える、請求項12に記載の半導体センサアセンブリ(30、30´、30´´)。
- 5mm×10mm×8mmより小さい外形寸法を有する、請求項1〜13のいずれか1項に記載の半導体センサアセンブリ(30、30´、30´´)。
- 前記センサデバイス(20、20´)は、絶対圧センサ又は差圧センサ又は赤外線センサである、請求項1〜14のいずれか1項に記載の半導体センサアセンブリ(30、30´、30´´)。
- 自動車エンジンの排気ガスの圧力及び/又は組成を測定するための、請求項15に記載の半導体センサアセンブリ(30、30´、30´´)の使用。
- 半導体センサアセンブリ(30、30´、30´´)を製造する方法であって、
−腐食性環境中の腐食性成分によって腐食され得る材料の少なくとも1つの第1のボンドパッド(12)を備える処理デバイス(10´)を提供する工程と、
−少なくとも1つの第2のボンドパッド(21、21´)を備えるセンサデバイス(20、20´)を提供する工程であって、前記第2のボンドパッドは、第1の耐腐食性材料からなり、及び/又は第1の耐腐食性材料で被覆されている、工程と、
−少なくとも1つのボンディングワイヤ(34)によって、前記処理デバイスの前記少なくとも1つの第1のボンドパッドと前記センサデバイスの前記少なくとも1つの第2のボンドパッドとの間の信号接続を行う工程と、
−前記処理デバイス(10´)を第2の耐腐食性材料(32)によって部分的にオーバーモールドする工程であって、このようにして前記処理デバイス(10´)を前記第2の耐腐食性材料(32)内の空洞(36)に部分的に曝露させる、工程と、
−前記空洞(36)内に前記センサデバイス(20、20´)を実装する工程と、
−前記処理デバイスを部分的にオーバーモールドする前に、前記処理デバイス(10´)と前記センサデバイス(20、20´)との間の前記信号接続を前記空洞(36)内で物理的に行うことを可能にするための再配信層(18)を提供する一方で、前記第2の耐腐食性材料(32)が前記少なくとも1つの第1のボンドパッド(12)を被覆する工程と、を含む、方法。
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EP3260833B1 (en) * | 2016-06-21 | 2021-10-27 | Melexis Technologies NV | Semiconductor sensor assembly for harsh media application |
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JPH1096743A (ja) * | 1996-09-25 | 1998-04-14 | Mitsubishi Electric Corp | 半導体センサ及びその製造方法 |
WO2007052335A1 (ja) * | 2005-11-01 | 2007-05-10 | Hitachi, Ltd. | 半導体圧力センサ |
JP2008107183A (ja) * | 2006-10-25 | 2008-05-08 | Denso Corp | 半導体装置 |
US20090045498A1 (en) * | 2007-08-13 | 2009-02-19 | Braden Jeffrey S | Partitioning of electronic packages |
JP2015169482A (ja) * | 2014-03-05 | 2015-09-28 | 株式会社フジクラ | 圧力センサ、及び圧力センサの製造方法 |
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CN107525620A (zh) | 2017-12-29 |
CN107525620B (zh) | 2021-11-09 |
KR20170143461A (ko) | 2017-12-29 |
US10006822B2 (en) | 2018-06-26 |
US20170363492A1 (en) | 2017-12-21 |
EP3260833A1 (en) | 2017-12-27 |
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