JP2018031659A - Circuit device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a circuit device 10 with which it is possible to firmly connect a probe to a terminal.SOLUTION: Provided is a circuit device 10 comprising an insulated substrate 1 having an open hole 1a, a wiring substrate 2 arranged on the insulated substrate 1 and including a resin film 21 having a resin open hole 2a at a place that corresponds to the open hole 1a and a connecting pad 4 provided thereupon, and a circuit wiring film 3 formed extending from the underside of the insulated substrate 1 to above the resin film 21 through a penetrated part K including the open hole 1a and the resin open hole 2a and connected to the connecting pad 4, at a portion of the surface of the resin film 21 in the resin open hole 2a being located inward of the penetrated part K from the surface of the insulated substrate 1 in the open hole 1a. The thickness of the circuit wiring film is reduced in the relatively narrow resin open hole 2a, and the inclusion of the resin film 21 helps to suppress the leakage of the heat applied to the connecting pad 4 when joining a probe, making strong joining possible.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a circuit device for a probe card used in, for example, a semiconductor element inspection apparatus.

  2. Description of the Related Art A circuit device in which a large number of terminals electrically connected to electrodes of a semiconductor element are arranged on an insulating substrate such as a ceramic substrate is used as a probe card for electrical inspection of the semiconductor element. The terminals are electrically led to the lower surface side of the circuit device by through conductors that penetrate the ceramic substrate in the thickness direction. As a result, electrical connection between the terminal and the external electric circuit can be made.

  A connection material (probe or the like) for connection with the electrode of the semiconductor element is joined to each terminal by solder or the like. The connection material joined to the terminal is pressed against the electrode of the semiconductor element to be connected, and the operation of the circuit of the semiconductor element is inspected by an external electric circuit.

  In recent years, in order to reduce damage to terminals due to heat at the time of bonding between the terminal and the probe pin, a bonding method has been proposed in which the bonding portion between the terminal and the probe pin is locally heated by laser light irradiation. ing.

JP 2011-114174 A

  In the conventional circuit device described above, the heat applied to the terminal by the laser beam is easily conducted to the ceramic substrate and the through conductor in contact with the terminal. For this reason, it has been difficult to effectively heat the terminals. As a result, the bonding strength and electrical connection reliability of the connecting material may be reduced, and the workability of the bonding work may be reduced.

  The circuit device according to one aspect of the present invention includes an insulating substrate having a through-hole penetrating from the upper surface to the lower surface, and a resin disposed on the insulating substrate and penetrating from the upper surface to the lower surface at a portion corresponding to the through-hole. A wiring board including a resin film having a through-hole and a connection pad provided on the upper surface of the resin film, and formed on the resin film from the lower surface of the insulating substrate through the through-hole including the through-hole and the resin through-hole. And a circuit wiring film connected to the connection pad. At least a part of the surface of the resin film in the resin through hole is located inside the through part with respect to the surface of the insulating substrate in the through hole.

  In the circuit device according to one aspect of the present invention, since the connection pad as a terminal is located on the upper surface of the resin film disposed on the insulating substrate, it is insulated from the connection pad by a resin film having a relatively low thermal conductivity. Heat conduction to the substrate is reduced.

Further, since the surface of the resin film in the resin through hole is inside the surface of the insulating substrate in the through hole, the space in the resin through hole is relatively narrow. The thickness of the circuit wiring film formed by plating or the like on the surface of the resin film in this relatively narrow space is relatively thin. Therefore, heat conduction toward the lower surface of the insulating substrate by the circuit wiring film in the resin through-hole is also reduced.

  Therefore, it is possible to provide a circuit device that can effectively heat the connection pad and can easily bond the connection material such as the probe pin to the connection pad by the bonding material.

(A) is a top view which shows the circuit apparatus 10 of embodiment of this invention, (b) is sectional drawing in the AA of (a). It is a top view which expands and shows the principal part of Fig.1 (a). (A) is a top view which expands and shows the principal part of FIG. 2, (b) is a top view which shows the modification of (a). (A)-(c) is sectional drawing which expands and shows the example of the principal part of FIG.1 (b), respectively. It is a perspective view which expands and shows the connection pad and its periphery of the circuit device shown in FIG. It is a top view which shows the modification of FIG.

  A circuit device 10 according to an embodiment of the present invention will be described with reference to the drawings. Note that the drawings used in the following description are schematic, and the distinction between upper and lower is for convenience of explanation and does not restrict the upper and lower when the circuit device 10 is actually used. The semiconductor elements in the following description are not limited to individual elements (so-called chips) but also include a semiconductor wafer in which a plurality of regions each serving as an element are arranged on a semiconductor substrate such as a silicon substrate.

  FIG. 1A is a plan view showing a circuit device 10 according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along line AA in FIG. 2 is an enlarged plan view showing a main part (B part) of the circuit device 10 of FIG. 1A, and FIG. 3A is a further enlarged main part (C part) of FIG. It is a top view shown. 4 (a) to 4 (c) are enlarged sectional views showing examples of the main part (D portion) of FIG. 1 (b). FIG. 5 is an enlarged perspective view showing the connection pads and the periphery thereof included in the circuit device shown in FIG. FIG. 3B will be described later.

  The circuit device 10 according to the embodiment basically includes an insulating substrate 1 having an upper surface and a lower surface, a wiring substrate 2 disposed on the insulating substrate 1, and a circuit wiring film 3 formed from the insulating substrate 1 to the wiring substrate 2. It is structured.

  The insulating substrate 1 has a through hole 1a penetrating from the upper surface to the lower surface. The wiring board 2 includes a resin film 21 having a resin through-hole 2a penetrating from the upper surface to the lower surface at a portion corresponding to the through-hole 1a, and a connection pad 4 provided on the upper surface of the resin film 21. The circuit wiring film 3 is formed on the resin film 21 from the lower surface of the insulating substrate 1 through the through portion K including the through hole 1a and the resin through hole 2a. The circuit wiring film 3 is connected to the connection pad 4 on the upper surface of the resin film 21. The through portion K is a portion that continuously penetrates the resin film 21 of the insulating substrate 1 and the wiring substrate 2 in the thickness direction. Further, at least a part of the surface of the resin film 21 in the resin through hole 2a is located inside the through portion K with respect to the surface of the insulating substrate 1 in the through hole 1a.

The insulating substrate 1 has a function of ensuring the overall rigidity of the circuit device 10, for example. The insulating substrate 1 increases the rigidity of the circuit device 10. Thereby, for example, when the circuit device 10 is used as a probe card substrate and pressed against a semiconductor element (not shown) for electrical connection, the deformation thereof is suppressed.

  The resin film 21 of the wiring board 2 serves as a base for arranging a plurality of connection pads 4 electrically connected to the semiconductor element in a linear arrangement on the same plane in a state of being electrically insulated from each other. Function. At this time, deformation of the wiring substrate 2 including the resin film 21 is suppressed by the insulating substrate 1 having high rigidity as described above.

  The resin film 21 of the insulating substrate 1 and the wiring substrate 2 has, for example, a square shape, a polygonal shape such as a hexagonal shape or an octagonal shape (when viewed from the upper surface side), or a plate shape such as a circular shape. In FIG. 1, a regular octagonal plate-like insulating substrate 1 and a regular octagonal layered resin film 21 disposed on the upper surface of the insulating substrate 1 are illustrated. The insulating substrate 1 and the resin film 21 have the same shape and dimensions in plan view and are integrated to form a base portion (no reference numeral). A plurality of connection pads 4 are arranged on the planar uppermost surface (the upper surface of the resin film 21) of the base portion.

  The dimensions in a plan view of the insulating substrate 1 and the resin film 21 are appropriately set according to conditions such as the dimensions in a plan view of a semiconductor element to be inspected when used as a probe card substrate, for example.

  As described above, the circuit wiring film 3 is provided on the base portion composed of the insulating substrate 1 and the resin film 21 from the lowermost surface to the uppermost connection pad 4. The circuit wiring film 3 is for, for example, electrically connecting the connection pads 4 to the lower surface side of the insulating substrate 1 to facilitate electrical connection to an external electric circuit. That is, the circuit wiring film 3 functions as a conductive path for connecting the connection pad 4 to the outside.

  The circuit wiring film 3 passes through the resin through-hole 2a penetrating from the upper surface to the lower surface of the resin film 21 and the through-hole 1a penetrating from the upper surface to the lower surface of the insulating substrate 1, and moves up and down the base portion. Conducted in the direction. That is, the circuit wiring film 3 is continuously arranged from the surface of the resin film 21 in the through portion K to the surface of the insulating substrate 1. A portion of the circuit wiring film 3 located on the lower surface of the insulating substrate 1 is electrically connected to an external electric circuit such as a circuit for performing an electrical inspection of the semiconductor element.

  For example, as shown in FIG. 5, the probe 6 is joined to the connection pad 4 of the circuit device 10 to form a probe card (no symbol). With respect to this probe card, the tip portion of the probe 6 is pressed against an electrode (not shown) of the semiconductor element, and is electrically connected to each other for electrical inspection of the semiconductor element.

  The connection pad 4 is a portion to which the probe 6 is bonded and fixed by a bonding material 7 such as solder. That is, the connection pad 4 functions as a base metal layer for melting and connecting the bonding material 7 by heating with laser light (hereinafter simply referred to as laser).

  The electrode of the semiconductor element electrically connected to the connection pad 4 via the probe 6 is further electrically connected to an external electric circuit via the circuit wiring film 3. As a result, the electrodes of the semiconductor element and the external electric circuit are electrically connected to each other, and it is inspected whether or not the electric circuit of the semiconductor element operates normally.

  In this case, the semiconductor element is temporarily placed on the upper surface of the circuit device 10 for electrical checking. Examples of the semiconductor element include a semiconductor integrated circuit element such as an IC or LSI, or a micromachine (so-called MEMS element) in which a minute electromechanical mechanism is formed on the surface of a semiconductor substrate.

  As described above, a large number of connection pads 4 electrically connected to the semiconductor element are provided on the upper surface of the resin film 21 in accordance with the electrodes of the semiconductor element. The individual connection pads 4 are formed in a quadrangular pattern such as a rectangular shape so as to be suitable for arranging a large number of connection pads 4 on the upper surface of the resin film 21. The rectangular connection pads 4 are arranged so that their long sides are adjacent to each other. That is, the plurality of connection pads 4 are arranged in a straight line. The arrangement of the connection pads 4 extends, for example, in parallel to the upper side of the resin film 21. Further, when the connection pad 4 has a rectangular pattern, for example, the probe 6 having a rectangular bottom surface as shown in FIG. 5 can be easily joined.

  For example, as described above, the circuit wiring film 3 includes from the connection pad 4 through the surface wiring portion on the upper surface to the surface wiring portion on the lower surface to the surface wiring portion on the lower surface. It functions as a conductive path that electrically connects the circuit. The probe 6 is electrically connected to the circuit wiring film 3 as the surface wiring via the connection pad 4 and is directly connected to the electrode of the semiconductor element, so that the electrode of the semiconductor element and the surface wiring on the lower surface of the insulating substrate 1 are connected. Are electrically connected to each other. That is, the semiconductor element disposed on the upper surface side of the circuit device 10 and connected to the probe 6 is electrically led out to the lower surface side of the circuit device 10 through the conductor portions of the circuit device 10.

  The insulating substrate 1 is formed of an insulating material including a ceramic sintered body such as an aluminum oxide sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, a mullite sintered body, or a glass ceramic. .

  Further, the circuit wiring film 3 and the connection pad 4 are made of a metal material such as tungsten, molybdenum, manganese, copper, chromium, nickel, silver, palladium, gold, or platinum. Further, the connection pad 4, the dummy pad 5, and the circuit wiring film 3 may be made of an alloy material of these metal materials. These metal materials (alloy materials) are formed by being attached to the insulating substrate 1 and the resin film 21 in the form of, for example, a metallized conductor (thick film conductor), a thin film conductor, or a plated conductor.

  The connection pad 4 and the circuit wiring film 3 may be made of different materials or may be attached to the insulating substrate 1 and the resin film 21 in different types of forms. For example, the connection pad 4 may include a thin film conductor of copper, and the circuit wiring film 3 may include a thick film conductor of tungsten.

  Further, the circuit wiring film 3 may be formed of different materials for the portion located in the through hole 1a and the portion located in the resin through hole 2a. For example, the circuit wiring film 3 including a tungsten thick film conductor may be disposed in the through hole 1a, and the circuit wiring film 3 including a thin film conductor such as copper may be disposed in the resin through hole 2a.

  The insulating substrate 1, the wiring substrate 2, and the circuit wiring film 3 can be produced, for example, as follows. That is, a raw material powder such as aluminum oxide is formed into a sheet shape together with an organic solvent and a binder to produce a plurality of ceramic green sheets, and the ceramic green sheets are subjected to punching such as mechanical punching or laser processing. The through hole 1a is formed. Further, a metal paste such as tungsten is kneaded with an organic solvent and a binder to produce a metal paste. Thereafter, the metal paste is printed on the inner surface of the through hole 1a (the surface of the ceramic green sheet in the through hole 1a) by a method such as screen printing using suction, and the ceramic green sheet and the metal paste are fired. Through these steps, the insulating substrate 1 and the circuit wiring film 3 in the through hole 1a can be produced.

  At this stage, the circuit wiring film 3 is not formed in the through hole 1a, and the circuit wiring film 3 can be formed together with the portion in the resin through hole 2a in the next step. This is advantageous in terms of the conductivity of the circuit wiring film 3 that electrically connects the base portion up and down, and is also advantageous in terms of the productivity of the circuit device 10.

  After the insulating substrate 1 and the like are manufactured as described above, the resin film 21, the connection pad 4, and the circuit wiring film 3 on the upper surface are formed on the upper surface of the insulating substrate 1 by a thin film method including plating (including pattern processing by an etching method). And the circuit wiring film 3 in the resin through-hole 2a is formed. The insulating substrate 1, the wiring substrate 2, and the circuit wiring film 3 can be manufactured through the above steps.

  Formation of the circuit wiring film 3 by the thin film method can be performed as follows, for example.

The resin film 21 is, for example, polyimide resin, polyamideimide resin, siloxane-modified polyamideimide resin, siloxane-modified polyimide resin, polyphenylene sulfide resin, wholly aromatic polyester resin, BCB (benzocyclobutene) resin, epoxy resin, bismaleimide triazine resin, It is made of a material appropriately selected from insulating resins such as polyphenylene ether resin, polyquinoline resin, and fluorine resin. A resin adhesive such as siloxane-modified polyamideimide resin, siloxane-modified polyimide resin, polyimide resin, bismaleimide triazine resin, or epoxy resin is applied to the lower surface of a sheet of about 20 μm to 50 μm made of the above resin to a thickness of about 5 μm to 20 μm. An adhesive layer is formed by applying and drying by a coating method such as a blade method, and the resin layer 21 is formed on the upper surface of the insulating substrate 1 by being heated and pressed on the insulating substrate 1.

Next, after forming the resin through-hole 2a in a portion corresponding to the through-hole 1a of the resin film 21 by RIE (reactive ion etching) method, laser method or a combination thereof, a method such as sputtering method from the upper surface and the lower surface Then, the adhesion layer 31 is formed on the exposed surface including the insulating substrate 1 and the through portion K of the resin film 21. The adhesion layer 31 is formed of an active metal (at least one kind) such as titanium, chromium and molybdenum with a thickness of 0.1 to 1 μm, for example. The length of the through portion K is the through hole 1
If it exceeds 3 times the diameter of a, a soft metal such as copper with a Young's modulus of less than 150 GPa (for example, copper, gold, silver, etc.) is additionally formed on the active metal by sputtering or the like with a thickness of 1 to 5 μm. May be. Thereby, the electrical connection reliability of the wiring of the through portion K can be further increased.

  After that, a plating resist for forming the main conductor layer is formed on the front and back surfaces, and the main conductor layer 32 made of a metal material (at least one kind) such as copper, gold, silver and nickel is required on the adhesion layer 31 by plating. Deposit 1-15 μm on the part. After peeling off the plating resist, a plating resist for forming a protective layer is formed again if necessary, and a protective layer of nickel, gold, or the like is formed in a thickness of 1 to 5 μm by a plating method. The protective layer 33 is made of nickel, gold, or the like as described above, and has a function of suppressing oxidation or the like of the main conductor layer 32. Then, after the resist is peeled off, the exposed adhesion layer (not shown) is removed by etching. The connection pad 4 and the circuit wiring film 3 can be formed by the above method. Further, the circuit wiring film 3 can be formed collectively from the inner surface of the through hole 1a to the inner surface of the resin through hole 2a.

  Of the formed circuit wiring film 3, the upper surface portion of the resin film 21 has a receiving land portion 3a and a wiring portion 3b. The wiring in the through-hole 1a and the surface wiring on the lower surface have an adhesion layer 31, a main conductor layer 32, and a protective layer 33 that are in close contact with each other and laminated. Of the circuit wiring film 3, the wiring part 3 b on the upper surface of the resin film 21 has an adhesion layer 31 and a protective layer 33. The receiving land portion 3 a is a portion formed so as to surround the resin through-hole 2 a in a plan view, and the upper wiring portion 3 b is a portion connecting the receiving land portion 3 a and the connection pad 4.

  In the circuit device 10 of the embodiment, at least a part of the surface of the resin film 21 in the resin through hole 2a is located inside the through portion K with respect to the surface of the insulating substrate 1 in the through hole 1a. Some examples of this form are shown in FIGS. In other words, as in the example shown in FIG. 3A, for example, the resin through-hole 2a is located on the inner side (center side in the plan view of the through hole 1a) than the inner surface of the through hole 1a in the plan view. . In the following, the surface of the resin film 21 in the resin through hole 2a may be referred to as the inner surface of the resin through hole 2a. Further, the surface of the insulating substrate 1 in the through hole 1a may be referred to as the inner surface of the through hole 1a.

  In such a circuit device 10, since the connection pads 4 as terminals are located on the upper surface of the resin film 21 disposed on the insulating substrate 1, the connection pads 4 are formed by the resin film 21 having a relatively low thermal conductivity. Therefore, it is possible to effectively reduce the heat conduction from the substrate to the insulating substrate 1.

  Further, since the surface of the resin film 21 in the resin through hole 2a is inside the surface of the insulating substrate 1 in the through hole 1a, the space in the resin through hole 2a is relatively narrow. The thickness of the circuit wiring film 3 formed on the surface of the resin film 21 in this relatively narrow space by sputtering or plating is relatively thin. Therefore, heat conduction in the direction of the lower surface of the insulating substrate 1 by the circuit wiring film 3 in the resin through hole 2a is also reduced. Further, the wiring portion 3b on the upper surface has a wiring thickness of about 3 to 10 [mu] when there is no main conductor layer 32, and is thinner than about 10 to 20 [mu] of the wiring thickness of the receiving land portion 3b with the main conductor layer. The heat conduction through is reduced. Note that the main conductor layer 32 may be formed on the connection pad 4 and the wiring portion 3b depending on required electrical characteristics, the length of the wiring portion 3b, and the like.

  Therefore, it is possible to provide the circuit device 10 that can effectively heat the connection pad 4 and can easily join the connection material such as the probe pin 6 to the connection pad 4 by the bonding material 7.

  The configuration in which the surface of the resin film 21 in the resin through hole 2a is on the inner side of the surface of the insulating substrate 1 in the through hole 1a is, for example, as shown in FIG. That is, the dimension of the opening part (resin opening) 2b of the resin through hole 2a in plan view is smaller than the dimension of the opening part (opening 1b) of the through hole 1a. The resin through hole 2a having the resin opening 1b having such a size can be formed by a method such as the RIE method by setting the resin opening 2b to have a relatively small size as described above.

  The thickness of the portion of the circuit wiring film 3 attached to the inner surface of the resin through hole 2a may be about 3 to 10 μm, for example. Further, the thickness of the portion of the circuit wiring film 3 attached to the inner surface of the through hole 1a may be about 4 to 12 μm, for example. With the circuit wiring film 3 having such a thickness, heat conduction can be effectively suppressed at the portion in the resin through-hole 2a, and electric resistance can be kept low at the portion in the relatively long through-hole 1a. be able to. The thickness of the circuit wiring film 3 on the inner surface of the resin through-hole 2a and the through-hole 1a is a value measured at a half of the thickness of each of the resin film 21 and the insulating substrate 1. The thickness can be measured by, for example, a method of observing a cross section at a predetermined position with a metal microscope or the like, or a method such as fluorescent X-ray analysis.

  In the example shown in FIG. 3A, the resin through hole 2a (resin opening 2b) has a bent shape (so-called zigzag shape) bent in plan view. Similarly, the circuit wiring film 3 attached to the inner surface of the resin through hole 2a is also intricately shaped. The resin through hole 2a having such a shape may be formed by performing processing by the RIE method from the insulating substrate 1 side.

In the example shown in FIG. 3A, the through hole 1a (opening 1b) has a circular shape in plan view. Similarly, the circuit wiring film 3 attached to the inner surface of the through hole 1a has a circular surface (cylindrical shape or the like). Then, as in the example shown in the sectional view of FIG.
The through-hole 1a has a diameter that decreases from the lower surface to the upper surface, and the circuit wiring film 3 that is attached to the inner surface of the through-hole 1a has a similar diameter. 1a may be formed by laser processing from the lower side of the insulating substrate 1.

  When the through hole 1a (and the circuit wiring film 3 on the inner surface thereof) has such a shape, the resin opening 2b is smaller than the opening 1b. Therefore, depending on the sputtering from the upper surface, the back surface of the resin opening 2b or the resin opening 2b of the through hole 1a. Although it is difficult to form the close adhesion layer 31, it is easy to form the adhesion layer 31 in the vicinity of the back surface of the resin opening 2b and the resin opening 2b of the through hole 1a by sputtering from the lower surface, so that it is easy to ensure the upper and lower conductivity. .

  FIG.3 (b) is a top view which shows the modification of Fig.3 (a). In FIG. 3B, the same parts as those in FIG. In the example shown in FIG. 3B, the resin through hole 2a (resin opening 2b) has a portion located outside the opening 1b of the through hole 1a in plan view. In this case, the circuit wiring film 3 is unlikely to be thin at the portion where the resin through hole 2a is located outside the through hole 1a and above the resin through hole 2a. Therefore, a circuit wiring film having high electrical connection reliability by the circuit wiring film 3 can be obtained.

  In the example shown in FIG. 3B, the width of the wiring portion 3 in the circuit wiring film 3 in a plan view is partially narrowed. In such a case, by reducing not only the thickness of the circuit wiring film 3 but also the width, the effect of reducing heat transmitted to the outside through the circuit wiring film 3 can be further enhanced.

  Further, in the circuit device 10 of this embodiment, for example, as in the example shown in FIG. 4B, the surface of the resin film 21 in the resin through hole 2a is on the upper surface side of the resin film 21 of the resin through hole 2a. You may have the part which inclines outside the through-hole part K continuously toward the opening of the lower surface side from opening (resin opening 2b). Such a through-hole 2a can be formed by increasing the amount of carrier gas when the resin through-hole 2a is formed by the RIE method and setting the gas pressure to be high.

  In this case, since the resin through-hole 2a is inclined outward from the upper part toward the lower part, the angle from the inclined surface of the resin through-hole 2a to the upper surface of the resin film 2 becomes a sharper angle. The circuit wiring film 3 is thinned in the hole 2a. Therefore, the heat transfer from the connection pad 4 transmitted through the circuit wiring film 3 to the outside is reduced, and the solderability of the probe 6 to the connection pad 4 is effectively improved.

  In the example shown in FIG. 4A, the surface of the resin film 21 in the resin through hole 2a protrudes with an elliptical arc-shaped cross section toward the inside of the through portion K. In this case, the thickness of the circuit wiring film 3 can be effectively reduced at the central portion in the thickness direction of the resin through hole 2a.

  Further, in the circuit device 10 of this embodiment, for example, as shown in FIG. 4C, a part of the resin film 21 extends to at least a part of the surface of the insulating substrate 1 in the through hole 1a. It may be.

  In this case, since a part of the resin film 21 extends to the surface of the insulating substrate 1, the adhesion strength of the resin film 21 to the insulating substrate 1 is effectively improved. Therefore, the connection reliability of the circuit wiring film 3 is increased. For example, even if the angle from the inclined surface of the resin through hole 2a to the upper surface of the resin film 21 becomes an acute angle as in the modification shown in FIG. 4B, the insulating substrate 1 and the resin film 21 of the resin film 21 are formed. It is possible to sufficiently secure the bonding strength to.

In order to obtain such a through hole 2a, for example, the thickness or composition of the adhesive layer formed on the resin film may be adjusted. Further, by setting the conditions for bonding the resin film 21 to the insulating substrate 1 on the high temperature and high pressure side, the adhesive layer hangs down inside the through hole 1a during bonding, and then the resin film 21 is processed by the RIE method. However, the through hole 2a having the above configuration can be formed.

  FIG. 6 is a plan view showing a modification of FIG. In FIG. 6, the same parts as those in FIG. In the example shown in FIG. 6, the dummy pad 5 is disposed adjacent to the connection pad 4 positioned at least at the end of the array among the plurality of arrayed connection pads 4. The end of the arrangement in this case is a portion where the end of the plurality of connection pads 4 arranged at the same adjacent interval is located. Further, the portion where the adjacent interval is wide is a portion adjacent to the connection pad 4 at the end of the array. When one connection pad 4 exists alone, a portion adjacent to the connection pad 4 corresponds to a portion adjacent to the connection pad 4 at the end of the array.

  In the example illustrated in FIG. 6, there are three rows of connection pads 4 including one, two, and three connection pads 4 in order from the top. In each arrangement, dummy pads 5 are arranged adjacent to both ends thereof.

  Such an arrangement form of the connection pads 4 and the dummy pads 5 is such that the dummy pads 5 are arranged so as to fill a portion of the plurality of connection pads 4 arranged relatively close to each other. It can be considered. In addition, the portion where the plurality of connection pads 4 are arranged can be regarded as a form in which the deviation of the exposed area of the resin film 21 exposed at the arranged portion is reduced.

  In this case, since the dummy pad 5 is arranged in a portion where the connection pad 4 is not continuous, the influence on the heating efficiency by the laser due to the arrangement (bias) of the connection pad 4 can be reduced. . Therefore, more stable heating with a laser can be performed, and soldering of the probe 6 to the connection pad 4 can be performed stably.

  The dummy pad 5 can be formed by the same method using, for example, the same material as the connection pad 4. Further, in the process of forming the connection pad 4, the dummy pad 5 can be formed at the same time by appropriately setting the plating resist pattern.

  In addition, this invention is not limited to the example of the above embodiment, A various change is possible if it is in the range of the summary of this invention. For example, the resin through hole 2a may have a circular shape in a plan view like the through hole 1a, and the through hole 1a may have a non-smooth inner surface (such as a zigzag shape in a plan view) like the resin through hole 2a.

DESCRIPTION OF SYMBOLS 1 ... Insulating substrate 1a ... Through-hole 1b ... Opening 2 ... Wiring board
21... Resin film 2 a... Resin through hole 2 b... Resin opening 3... Circuit wiring film 3 a.
31 …… Adhesion layer
32 ・ ・ ・ ・ ・ Main conductor layer
33 ... Protective layer 4 ... Connection pad 5 ... Dummy pad 6 ... Probe 7 ... Bonding material
10 ... Circuit device K ... Penetration part

Claims (3)

An insulating substrate having a through hole penetrating from the upper surface to the lower surface;
A wiring board that is disposed on the insulating substrate and includes a resin film having a resin through hole penetrating from an upper surface to a lower surface at a portion corresponding to the through hole, and a connection pad provided on the upper surface of the resin film;
Formed from the lower surface of the insulating substrate through the through hole and the resin through hole including the resin through hole on the resin film, and includes a circuit wiring film connected to the connection pad,
At least a part of the surface of the resin film in the resin through hole is located inside the through part with respect to the surface of the insulating substrate in the through hole. The surface of the resin film in the resin through hole has a portion that is continuously inclined to the outside of the through portion from the opening on the upper surface side of the resin film of the resin through hole toward the opening on the lower surface side. The circuit device according to claim 1, wherein: The circuit device according to claim 1, wherein a part of the resin film extends to at least a part of a surface of the insulating substrate in the through hole.

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