JP2018019040A5 - - Google Patents

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Publication number
JP2018019040A5
JP2018019040A5 JP2016150331A JP2016150331A JP2018019040A5 JP 2018019040 A5 JP2018019040 A5 JP 2018019040A5 JP 2016150331 A JP2016150331 A JP 2016150331A JP 2016150331 A JP2016150331 A JP 2016150331A JP 2018019040 A5 JP2018019040 A5 JP 2018019040A5
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JP
Japan
Prior art keywords
semiconductor region
region
light detection
detection device
semiconductor
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Ceased
Application number
JP2016150331A
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English (en)
Japanese (ja)
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JP2018019040A (ja
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Priority to JP2016150331A priority Critical patent/JP2018019040A/ja
Priority claimed from JP2016150331A external-priority patent/JP2018019040A/ja
Priority to US15/656,490 priority patent/US10497818B2/en
Priority to CN201710628241.4A priority patent/CN107665897B/zh
Publication of JP2018019040A publication Critical patent/JP2018019040A/ja
Publication of JP2018019040A5 publication Critical patent/JP2018019040A5/ja
Priority to US16/662,713 priority patent/US11309442B2/en
Ceased legal-status Critical Current

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JP2016150331A 2016-07-29 2016-07-29 光検出装置および光検出システム Ceased JP2018019040A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016150331A JP2018019040A (ja) 2016-07-29 2016-07-29 光検出装置および光検出システム
US15/656,490 US10497818B2 (en) 2016-07-29 2017-07-21 Photodetection device and photodetection system
CN201710628241.4A CN107665897B (zh) 2016-07-29 2017-07-28 光检测设备和光检测系统
US16/662,713 US11309442B2 (en) 2016-07-29 2019-10-24 Photodetection device and photodetection system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016150331A JP2018019040A (ja) 2016-07-29 2016-07-29 光検出装置および光検出システム

Publications (2)

Publication Number Publication Date
JP2018019040A JP2018019040A (ja) 2018-02-01
JP2018019040A5 true JP2018019040A5 (enrdf_load_stackoverflow) 2019-06-20

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JP2016150331A Ceased JP2018019040A (ja) 2016-07-29 2016-07-29 光検出装置および光検出システム

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JP (1) JP2018019040A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2019180898A1 (ja) * 2018-03-23 2021-03-25 パナソニックＩｐマネジメント株式会社 固体撮像素子
JPWO2019186750A1 (ja) * 2018-03-28 2021-04-01 パナソニックＩｐマネジメント株式会社 固体撮像素子
WO2019189700A1 (ja) * 2018-03-30 2019-10-03 パナソニックＩｐマネジメント株式会社 光検出器
JP7379117B2 (ja) * 2019-11-27 2023-11-14 キヤノン株式会社 光電変換装置及び光電変換システム
US11508867B2 (en) * 2020-01-28 2022-11-22 Adaps Photonics Inc. Single photon avalanche diode device
CN113299787B (zh) * 2021-05-21 2022-04-29 武汉新芯集成电路制造有限公司 半导体器件及其制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002090116A (ja) * 2000-09-12 2002-03-27 Asahi Optical Co Ltd ３次元画像検出装置
RU2416840C2 (ru) * 2006-02-01 2011-04-20 Конинклейке Филипс Электроникс, Н.В. Лавинный фотодиод в режиме счетчика гейгера
WO2007127607A1 (en) * 2006-04-25 2007-11-08 Koninklijke Philips Electronics, N.V. Implementation of avalanche photo diodes in (bi) cmos processes
DE102007000377A1 (de) * 2007-07-16 2009-01-22 Hilti Aktiengesellschaft Laserdistanzhandmessgerät mit einem Impulsrückmischverfahren
IT1392366B1 (it) * 2008-12-17 2012-02-28 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione
JP2011159756A (ja) * 2010-01-29 2011-08-18 Sony Corp 固体撮像装置とその製造方法、及び電子機器
US8916873B2 (en) * 2011-09-14 2014-12-23 Infineon Technologies Ag Photodetector with controllable spectral response
US9160949B2 (en) * 2013-04-01 2015-10-13 Omnivision Technologies, Inc. Enhanced photon detection device with biased deep trench isolation
JP2015038435A (ja) * 2013-08-19 2015-02-26 株式会社東芝 放射線検出器
JP2015056622A (ja) * 2013-09-13 2015-03-23 株式会社リコー 半導体装置
JP2015084392A (ja) * 2013-10-25 2015-04-30 浜松ホトニクス株式会社 光検出器

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