CN103178134B - 用于光信号的相位敏感检测的光电池器件 - Google Patents
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Abstract
实施方式涉及用于光信号的相位敏感检测的光电池器件。在一个实施方式中,基于沟槽的光电池,尤其是与传统方法相比,非常快地捕获光生电荷载流子,因为光电池的沟槽在衬底体区内深处创建了避免载流子的耗时扩散的耗尽区。
Description
技术领域
本发明大致涉及光电池(photocell),更具体地讲,涉及用于光信号的相位敏感检测的光电池器件。
背景技术
各种传感器和仪表利用声光脉冲或编码信号的时延测量。在一些应用中,测距与模式检测相结合。例如这种情况,在一些飞行时间技术中用到了可见光或红外光。由于光速很快,读出电路必须在时序要求严格的范围内工作。光生电荷载流子的快速捕获和测评是电池设计和读出技术的特别关注点。因为载流子扩散是耗时的,所以要避免空间电荷区外部载流子的本底电流。
这是项具有挑战性的任务,尤其是对于红外光,因为它的穿透深度属于10微米级或更高。从光生电荷载流子聚集到红外光的穿透深度或更深的地方散布电场是一项有挑战性的任务。由于红外光的不可见性,所以在许多应用中红外光是信号的选择,鉴于此,这种不利情况需要被解决。
传统的解决方法是利用瞬态开关方法:在快速偏置扫描条件下,金属-绝缘体-半导体电极下面的半导体区域被脉冲为深度耗尽状态。在这种操作模式下,耗尽宽度大于在平衡态下最大的耗尽宽度。这种效果用于具有捕获载流子的表面电极的器件中,即,电荷耦接元件(CCD)或者是光子混合器件。如图1A所示,红外光在适度衬底掺杂度的空间电荷区的至少部分外侧产生电子空穴对。这些载流子产生噪声,应该避免。另外,参考图1B,空间电荷区的三维造型也会出现,这意味着在一些器件几何图形中存在串扰,并且限制了器件的收缩潜力。因此,光电池器件需要被改进。
发明内容
实施方式涉及光电池器件。在一个实施方式中,光电池包括衬底;以及至少两个形成于衬底内的垂直沟槽,并且它们彼此横向隔开使得当光电池在耗尽模式下工作时,空间电荷区在衬底中横向(laterally,侧向)延伸,其中至少两个垂直沟槽中的第一沟槽布置在空间电荷区内,至少两个垂直沟槽中的第二沟槽布置在衬底的中性区内。
在一个实施方式中,一种方法包括:在衬底中设置深度至少5微米的第一垂直沟槽;以及在衬底中设置深度至少5微米的第二垂直沟槽;以及通过交替地施加电压于第一垂直沟槽栅极触点和第二垂直沟槽栅极触点来交替地耗尽衬底的围绕所述第一垂直沟槽的第一区域和衬底的围绕所述第二垂直沟槽的第二区域。
在一个实施方式中,光电池包含p衬底;以及至少两个形成于衬底内的垂直沟槽,并且它们彼此横向隔开使得当施加正电压到至少两个垂直沟槽中的第一沟槽时,空间电荷区在衬底中横向延伸,其中第一沟槽布置在空间电荷区内,而至少两个垂直沟槽中的第二沟槽布置在衬底的中性区内,当正电压施加于第二沟槽时,空间电荷区在衬底内横向延伸,其中第二沟槽布置在空间电荷区内而第一沟槽布置在中性区内。
在一个实施方式中,光电池包含n衬底;以及至少两个形成于衬底内的垂直沟槽,并且它们彼此横向隔开使得当负电压施加到至少两个沟槽中的第一沟槽时,空间电荷区在衬底中横向延伸,其中第一沟槽布置在空间电荷区内而至少两个沟槽中的第二沟槽布置在衬底的中性区内,当负电压施加于第二沟槽时,空间电荷区在衬底中横向延伸,其中第二沟槽布置在空间电荷区内而第一沟槽布置在中性区内。
附图说明
参照以下结合附图对本发明各种实施方式的详细说明,可更全面地理解本发明,其中:
图1A是各种强度的光在硅中的穿透深度的曲线图。
图1B是在深耗尽层(deepdepletion)的空间电荷区宽度的曲线图。
图2A是根据一个实施方式的光电池器件的侧截面图。
图2B是根据一个实施方式的电压图。
图3A是根据一个实施方式的光电池器件的俯视图。
图3B是根据一个实施方式的光电池器件的俯视图。
尽管本发明可被修改为各种变形和替换形式,但已通过附图中的示例示出了其具体内容并且将进行详细的说明。但是应当理解,这样做的目的并不是为了将本发明限制于所描述的特定的实施方式。相反,其意图是涵盖所有落入由所附权利要求限定的本发明的精神和范围内的所有修改方案、等同方案和替代方案。
具体实施方式
实施方式涉及光电池器件。在一个实施方式中,基于沟槽的光电池提供十分快速地捕获光生电荷载流子的特性,特别是相比于传统方式,因为光电池的沟槽在大衬底内深处创建了避免载流子的耗时扩散的耗尽区。
参考图2,描述了光电池器件100的一个实施方式。器件100包括至少两个形成于衬底101内的沟槽。在图2所示的实施方式中,光电池包括2个沟槽,第一沟槽102和第二沟槽104。如果正偏压施加于第一沟槽102,在衬底101内就形成了如图所示空间电荷区106,而当没有施加偏压时,第二沟槽104被中性区108所包围,实施方式中的衬底101是p衬底。此配置也可以是相反的,即,当正电压施加于第二沟槽104而第一沟槽102保持中性时,在第二沟槽104的周围形成空间电荷区106。在使用n衬底的实施方式中,当负偏压,而非正偏压,施加于第一沟槽102或第二沟槽104时,也会出现相同的空间电荷区配置。
在实施方式中,每个沟槽102和104都会向器件100内延伸例如至少约5微米,比如约30微米或更深,然而沟槽102和104的具体深度可以根据将要作为信号源的光的波长来选择。如图所示,沟槽102和104延伸了相同或相似的深度,然而这在其他实施方式中可以改变。因此沟槽102和104形成了垂直沟槽栅极,从而减少或消除了上述的垂直耗尽限制,因为空间电荷区106是水平散布的,即,与器件100的表面平行。沟槽102和104的其他尺寸可以是,例如,从约0.1微米到约5微米宽和从约0.1微米到约100微米长(参考俯视图3A和3B所示的尺寸)。
在实施方式中,在图2中示出的沟槽102和104的水平间隔与衬底101的掺杂度有关,使得操作强制在沟槽102和104之间的全耗尽带。因此,虽然实施方式中能够包含超过两个的沟槽,横向耗尽要求意味着实际上不可以并行地布置超过两条的沟槽。但是,相比传统的光子混合器件,实施方式可以配置更小的横向尺寸,比如约1微米或更小,并且可以是各种不同的配置。参考图3A,器件400包括两个形成于衬底401内的栅极沟槽402和404,分别具有触点414和触点416。也示出了体区触点(bulkcontact)418和420。在图3B中,包括了四个沟槽402、403、404和405,这样的配置可以提供环形偏压(circularbiasvoltage)。
在使用中,比如当器件100作为相位敏感检测器(phasesensitivedetector)进行操作时,相邻沟槽102和104的电极110和112分别被交替地施加正偏压,即,如图2B所示的快速扫描。电子被收集在沟槽栅极表面,并通过本地n掺杂区和触点从器件100中提取,同时空穴被衬底体区(bulkofsubstrate)101排斥,由衬底触点收集。然后读出电路可以用来比较在不同触点聚集的电荷量。因为沟槽102和104是在耗尽模式下操作,且发送的信号频率设置为固定频率,所以在光脉冲和它的反射之间相位关系可以被评价。
在这里已经描述了本发明的系统、器件和方法的各种实施方式。这些实施方式仅仅作为示例给出,而不是为了限制本发明的范围。此外,应该理解的是,已经描述的实施方式的各种特征能够以各种方式结合,以产生大量其他实施方式。另外,已经说明了用于公开的实施方式的各种材料、尺寸、形状、配置和位置等,除了公开的那些外,也可以在不超过本发明范围的情况下使用其他的材料、尺寸、形状、配置和位置等。
在相关技术领域中的普通技术人员将会认识到,相比上述任何一个实施方式,本发明可包括其所示出的更少的特征。这里所描述的实施方式并不意味着一个详尽的方法介绍,其中本发明的各种特征也可以组合。因此,这些实施方式不是相互排斥的特征的组合,而是,本发明可以包括从不同的个别实施方式中选择不同的个别特性而相结合,在本技术领域的普通技术人员应该会理解。
以上引用文献的任何结合有以下限制:与本文中清楚公开内容相矛盾的内容不被结合到本文中。以上引用文献的任何结合还有以下限制:这些文件中的权利要求不通过引用结合到本文。以上引用文献的任何结合还有以下限制:除非本文有清楚的说明,否则这些文件中的任何定义不通过引用结合到本文。
为了解释用于本发明的权利要求,明确地指出,除非在权利要求中使用了特定术语“用于…装置”或“用于…步骤”,否则不适用35U.S.C第112节、第六段的规定。
Claims (24)
1.一种光电池,包括:
衬底;
至少两个垂直沟槽,形成于所述衬底中且彼此横向隔开使得当所述光电池在耗尽模式下操作时空间电荷区在所述衬底中横向延伸,并且所述至少两个垂直沟槽中的第一沟槽被布置在所述空间电荷区中,而所述至少两个垂直沟槽中的第二沟槽被布置在所述衬底的中性区中;以及
形成于所述衬底中的第三沟槽和第四沟槽。
2.权利要求1所述的光电池,其中,所述至少两个垂直沟槽向所述衬底内延伸至少5微米。
3.权利要求2所述的光电池,其中,所述至少两个垂直沟槽向所述衬底内延伸至少30微米。
4.权利要求3所述的光电池,其中,所述至少两个垂直沟槽中的每一个的宽度为0.1微米至5微米,且所述至少两个垂直沟槽中的每一个的长度为0.1微米至100微米。
5.权利要求1所述的光电池,其中,所述至少两个沟槽的深度与信号源的波长相关。
6.权利要求1所述的光电池,其中,所述空间电荷区形成于所述中性区内。
7.权利要求1所述的光电池,其中,分隔所述至少两个垂直沟槽的横向距离与所述衬底的掺杂度相关。
8.权利要求7所述的光电池,其中,分隔所述至少两个沟槽的横向距离在0.5微米至100微米的范围。
9.权利要求1所述的光电池,还包括至少两个电极,第一电极耦接所述第一沟槽且第二电极耦接所述第二沟槽。
10.权利要求9所述的光电池,其中,所述电极被配置为用正电压交替偏置。
11.权利要求9所述的光电池,还包括耦接所述电极的电路,且所述电路被配置为比较在所述第一电极上的电荷和在所述第二电极上的电荷。
12.权利要求1所述的光电池,其中,所述第一沟槽与所述第二沟槽平行。
13.权利要求1所述的光电池,其中,所述第一和第二沟槽为相互平行的第一对,所述第三和第四沟槽为相互平行的第二对,且所述第一对和所述第二对相互垂直。
14.权利要求13所述的光电池,其中,所述第一对和所述第二对被配置用于环形偏压。
15.权利要求1所述的光电池,其中,当正电压施加于所述第一沟槽且所述衬底包括p衬底时,所述第一沟槽被布置在所述空间电荷区中。
16.权利要求1所述的光电池,其中,当负电压施加于所述第一沟槽且所述衬底包括n衬底时,所述第一沟槽被布置在所述空间电荷区中。
17.一种制造光电池的方法,包括:
在衬底中设置第一垂直沟槽;
在所述衬底中设置第二垂直沟槽;
在所述衬底中设置第三垂直沟槽;以及
在所述衬底中设置第四垂直沟槽;并且
通过交替地施加电压于第一垂直沟槽栅极触点和第二垂直沟槽栅极触点来交替地耗尽衬底的围绕所述第一垂直沟槽的第一区域和衬底的围绕所述第二垂直沟槽的第二区域。
18.根据权利要求17所述的方法,其中,所述电压是正电压,且所述衬底是p掺杂的。
19.根据权利要求17所述的方法,其中,所述电压是负电压,且所述衬底是n掺杂的。
20.根据权利要求17所述的方法,还包括比较在所述第一垂直沟槽栅极触点和所述第二垂直沟槽栅极触点的电荷。
21.根据权利要求17所述的方法,其中,第一和第二垂直沟槽各自延伸入所述衬底至少5微米。
22.根据权利要求17所述的方法,其中,第一和第二垂直沟槽各自延伸入所述衬底至少30微米。
23.一种光电池,包括:
p衬底;
至少两个垂直沟槽,形成于所述衬底中且彼此横向隔开使得当正电压施加于所述至少两个垂直沟槽中的第一沟槽时,空间电荷区在所述衬底中横向延伸,并且所述第一沟槽被布置在所述空间电荷区中,而所述至少两个垂直沟槽中的第二沟槽被布置在所述衬底的中性区中,并且当正电压施加于所述第二沟槽时,所述空间电荷区在所述衬底中横向延伸,并且所述第二沟槽被布置在所述空间电荷区中,而所述第一沟槽被布置在所述中性区中,以及
形成于所述衬底中的第三沟槽和第四沟槽。
24.一种光电池,包括:
n衬底;
至少两个垂直沟槽,形成于所述衬底中且彼此横向隔开使得当负电压施加于所述至少两个垂直沟槽中的第一沟槽时,空间电荷区在所述衬底中横向延伸,并且所述第一沟槽被布置在所述空间电荷区中,而所述至少两个垂直沟槽中的第二沟槽被布置在所述衬底的中性区中,并且当负电压施加于所述第二沟槽时,所述空间电荷区在所述衬底中横向延伸,并且所述第二沟槽被布置在所述空间电荷区中,而所述第一沟槽被布置在所述中性区中,以及
形成于所述衬底中的第三沟槽和第四沟槽。
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