JP2018019007A - Work division device and work division method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a work division device and a work division method which allow for smooth division of a wafer into individual chips, without being affected by the difference of extension amount of a dicing tape.SOLUTION: A work division device 10A is separately provided with a low temperature chuck table 12 for imparting a first temperature in a division region 4A, and a low temperature plate 14 for imparting a second temperature lower than the first temperature in a partial region 4E of a non-division region 4B. With such an arrangement, a temperature difference is set between the division region 4A and the region 4E, and the hardness of the region 4E is brought close to the hardness of the division region 4A, or is made harder than the hardness of the division region 4A, before expanding a dicing tape 4.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a workpiece dividing apparatus and a workpiece dividing method, and more particularly to a workpiece dividing apparatus and a workpiece dividing method for dividing a workpiece such as a semiconductor wafer in which a division line is processed in advance into individual chips.

  2. Description of the Related Art Conventionally, in manufacturing semiconductor chips (hereinafter referred to as chips), for example, a semiconductor wafer (hereinafter referred to as a wafer) in which a division planned line is processed in advance by laser irradiation or the like is provided along the planned division line. In addition, there is known a workpiece dividing device that divides (also referred to as individualization) into individual chips (see Patent Documents 1 and 2).

  The wafer is attached to a dicing tape (hereinafter also referred to as an expansion tape) via a film adhesive such as DAF (Die Attach Film) or LC tape (trade name: manufactured by Lintec Corporation) and a chip protective material. The workpiece dividing device expands the dicing tape (hereinafter referred to as “expand”) to divide the wafer, the film adhesive, and the chip protective material into individual chips.

  10A and 10B are explanatory views of the wafer unit 2 to which the wafer 1 to be divided by the workpiece dividing apparatus is attached. FIG. 10A is a perspective view of the wafer unit 2, and FIG. It is sectional drawing.

  The wafer unit 2 includes a wafer 1, a film adhesive 3, a dicing tape 4 and a frame 5. The wafer 1 is attached to a dicing tape 4 having a thickness of about 100 μm with an adhesive layer formed on the surface via a film-like adhesive 3, and the dicing tape 4 has a ring-shaped frame 5 whose outer peripheral portion is rigid. It is fixed to.

  In the workpiece dividing apparatus, the frame 5 of the wafer unit 2 is fixed, and then the dicing tape 4 is pushed up and expanded by the expanding operation of the expanding ring. As a result, the wafer 1 is divided into individual chips 6.

  By the way, the dicing tape 4 has a low Young's modulus and is flexible, and the film adhesive 3 generally has a high viscosity near room temperature. For this reason, in order to smoothly divide the wafer 1 into individual chips 6, it is necessary to expand the dicing tape 4 in a state where the dicing tape 4 and the film adhesive 3 are cooled and made brittle.

  As an expansion tape cooling method, an atmospheric cooling method disclosed in Patent Document 1 is known, and as a cooling method for a film adhesive, a low temperature chuck table method disclosed in Patent Document 2 is known. .

  Here, in the present specification, an area of the dicing tape 4 to which the wafer 1 is attached via the film adhesive 3, that is, an area where the wafer 1 is divided is referred to as a “divided area 4 </ b> A”. A region formed outside the region is referred to as “non-divided region 4B”. The non-divided area 4B is an area excluding the “fixed area 4C” fixed to the frame 5 in the dicing tape 4.

  Patent Document 1 discloses a method in which a cooling means is brought close to a portion corresponding to the non-divided region 4B and the expansion tape is cooled to 10 to -15 ° C. by cold air, or a method in which the expansion tape is cooled by cold air from a cold air introduction unit However, any method is a method of cooling the expansion tape by cooling the atmosphere including the expansion tape.

  On the other hand, in the low temperature chuck table method of Patent Document 2, the low temperature chuck table is brought into contact with a portion corresponding to the divided area 4A of the dicing tape, and the film adhesive is locally cooled through the dicing tape. It is a method.

JP 2012-146722 A Japanese Patent Laying-Open No. 2015-164233

  Incidentally, the film adhesive 3 shown in FIG. 10 generally has a higher Young's modulus than the dicing tape 4. Due to such a difference in Young's modulus, the divided area 4A to which the film adhesive 3 is attached of the dicing tape 4 tends to have a smaller expansion amount than the non-divided area 4B. That is, the hardness of the divided area 4A is governed by the hardness of the film adhesive 3 and is harder than the non-divided area 4B.

  Therefore, the workpiece dividing apparatuses disclosed in Patent Documents 1 and 2 have the following problems.

  The atmosphere cooling method of Patent Document 1 is a method for cooling the expansion tape by cooling the atmosphere. In other words, since the entire expansion tape is cooled, the difference in expansion amount between the divided area and the non-divided area of the expansion tape is used. Is not shrunk, and only the non-divided region is easily stretched. For this reason, even if the expansion tape is expanded, the divided area cannot be expanded to a desired expansion amount, and there is a problem that the wafer cannot be divided into individual chips smoothly.

  On the other hand, the low temperature chuck table cooling method of Patent Document 2 is a method in which the divided regions are locally cooled by the low temperature chuck table, so that the non-divided regions are easier to extend than the atmospheric cooling method of Patent Document 1, and this method also uses a wafer. There was a problem that it could not be divided into individual chips smoothly.

  Further, the above-described problem may occur even in a wafer unit without a film adhesive. That is, since the hardness of the divided area is governed by the hardness of the wafer, the wafer cannot be divided into individual chips smoothly due to the difference in expansion amount between the divided area and the non-divided area of the dicing tape. There was a problem.

  The present invention has been made in view of such a problem, and a workpiece dividing apparatus and a workpiece dividing method capable of smoothly dividing a wafer into individual chips without being affected by a difference in expansion amount of a dicing tape. The purpose is to provide.

  In order to achieve the object of the present invention, the work dividing apparatus of the present invention is a work dividing apparatus that divides a wafer attached to a dicing tape and mounted on a ring-shaped frame into individual chips. A temperature difference generating means that has a divided area to which the wafer is affixed and a non-divided area formed outside the divided area, and generates a temperature difference in which the non-divided area is relatively low in temperature relative to the divided area; Expanding means for expanding the dicing tape in which the temperature difference is generated by the temperature difference generating means.

  In order to achieve the object of the present invention, the work dividing method of the present invention is a work dividing method in which a wafer attached to a dicing tape and mounted on a ring-shaped frame is divided into individual chips. A temperature difference generating step that has a divided region to which the wafer is attached and a non-divided region formed outside the divided region, and generates a temperature difference that causes the non-divided region to be relatively low in temperature relative to the divided region; And an expanding step of expanding the dicing tape in which the temperature difference has occurred.

  According to the present invention, a temperature difference (temperature of the divided region> temperature of the non-divided region) that causes the non-divided region to be relatively low in temperature relative to the divided region is generated, and the hardness of the non-divided region is set to the hardness of the divided region. Or the hardness of the non-divided area is made harder than the hardness of the divided area. Thus, when the dicing tape is expanded, the difference in expansion amount between the divided area and the non-divided area of the dicing tape can be eliminated or reduced, so that a desired expansion amount suitable for dividing the wafer is obtained. be able to. Therefore, the wafer can be smoothly divided into individual chips without being affected by the difference in expansion amount of the dicing tape.

  According to one aspect of the workpiece dividing apparatus of the present invention, the temperature difference generating unit includes a first temperature applying unit that applies a first temperature to the divided region, and a second temperature that applies a second temperature lower than the first temperature to the non-divided region. 2 temperature provision means.

  In one aspect of the workpiece dividing method of the present invention, it is preferable that the temperature difference generating step applies a first temperature to the divided region and applies a second temperature lower than the first temperature to the non-divided region.

  In one aspect of the workpiece dividing device of the present invention, the expanding means has an expanding ring that pushes up the non-divided area of the dicing tape, and the second temperature applying means includes the outer peripheral portion of the expanding ring and the frame of the non-dividing area. It is preferable to give 2nd temperature to the area | region located between inner peripheral parts.

  According to one aspect of the work dividing method of the present invention, the temperature difference generating step includes a second temperature in a region located between the outer peripheral portion of the expanding ring that expands the dicing tape and the inner peripheral portion of the frame. Is preferably given.

  In one aspect of the workpiece dividing device of the present invention, the temperature difference generating means includes an atmosphere cooling means for cooling the atmosphere including the dicing tape, and a local cooling means for locally cooling the non-divided area of the dicing tape. Is preferred.

  In one aspect of the workpiece dividing method of the present invention, the temperature difference generating step may include an atmosphere cooling step for cooling the atmosphere including the dicing tape, and a local cooling step for locally cooling the divided region of the dicing tape. preferable.

  In one aspect of the workpiece dividing device according to the present invention, the temperature difference generating unit includes an atmosphere cooling unit that cools the atmosphere including the dicing tape, and a local heating unit that locally heats the divided region of the dicing tape. preferable.

  In one aspect of the workpiece dividing method of the present invention, the temperature difference generating step may include an atmosphere cooling step for cooling the atmosphere including the dicing tape, and a local heating step for locally heating the divided region of the dicing tape. preferable.

  In one aspect of the work dividing method of the present invention, the wafer is preferably attached to a dicing tape via a film adhesive.

  According to the present invention, it is possible to smoothly divide a wafer into individual chips without being affected by a difference in expansion amount of the dicing tape.

Main part structure diagram of work dividing apparatus of first embodiment Flow chart of work dividing method The block diagram which showed the structure of the workpiece | work division | segmentation apparatus of FIG. Explanatory drawing which divides | segments a wafer for every chip | tip with the workpiece | work division | segmentation apparatus of FIG. Explanatory drawing holding expansion of dicing tape by sub-ring Main part structure diagram of work dividing apparatus of second embodiment Main part structure diagram of work dividing apparatus of third embodiment The principal part structure figure of the workpiece | work division | segmentation apparatus of 4th Embodiment Main part structure diagram of work dividing apparatus of fifth embodiment Explanatory drawing showing the configuration of the wafer unit

  Hereinafter, preferred embodiments of a workpiece dividing apparatus and a workpiece dividing method according to the present invention will be described in detail with reference to the accompanying drawings. The present invention is not limited to the following embodiments, and various modifications and substitutions can be made to the following embodiments within the scope of the present invention.

[Work Dividing Device 10A of First Embodiment]
FIG. 1 is a cross-sectional view of a main part of a workpiece dividing apparatus 10A according to the first embodiment.

  10 A of workpiece | work division | segmentation apparatuses are provided with the 1st temperature provision means and the 2nd temperature provision means which comprise a temperature difference production | generation means. That is, the workpiece dividing apparatus 10A includes a disk-shaped low-temperature chuck table 12 corresponding to the first temperature applying means, and a ring-shaped low-temperature plate 14 corresponding to the second temperature applying means, and an expand constituting the expanding means. A ring 16 is provided.

  As an example, the dicing tape 4 of the wafer unit 2 shown in FIG. 10 is placed on the flat upper surface 12A of the low-temperature chuck table 12. The wafer unit 2 is configured by mounting a disk-shaped wafer 1 on a frame 5 via a dicing tape 4. The wafer 1 is attached to the dicing tape 4 via a film adhesive 3 such as DAF or LC tape. Of the dicing tape 4 of the wafer unit 2, a circular divided area 4 </ b> A placed on the upper surface 12 </ b> A of the low temperature chuck table 12 is cooled by the low temperature chuck table 12, and outside the divided area 4 </ b> A of the dicing tape 4. A partial region 4E of the formed ring-shaped non-divided region 4B is placed on the flat upper surface 14A of the low temperature plate 14 and cooled. This region 4E is a ring-shaped region between the outer peripheral portion 16A of the expanding ring 16 and the inner peripheral portion 5A of the frame 5. That is, in the dicing tape 4, the ring-shaped push-up area 4 </ b> D with which the upper surface 16 </ b> B of the expand ring 16 contacts is excluded from the area 4 </ b> E cooled by the low temperature plate 14. The reason for this will be described later.

  The thickness of the wafer 1 is, for example, about 50 μm, and the thickness of the film adhesive 3 is about several μm to 100 μm. The dicing tape 4 is, for example, a PVC (polyvinyl chloride) tape. Further, as the film-like adhesive 3, a substrate having a Young's modulus larger than that of the dicing tape 4, for example, a PO (polyolefin) type is used.

  The low-temperature chuck table 12 holds the divided area 4A of the dicing tape 4 by vacuum suction, so that a part of the dicing tape 4 existing in the divided area 4A, the entire film-like adhesive 3 and the entire wafer 1 are in contact with each other. 1 temperature is applied by contact method. The first temperature is, for example, 5 ° C. or less, preferably about 5 ° C. to −5 ° C. Thereby, the divided area 4 </ b> A is cooled to the first temperature by the low temperature chuck table 12.

  As a cooling method of the divided region 4A by the low temperature chuck table 12, there is a method of supplying a refrigerant into the low temperature chuck table 12, but a method of freezing the upper surface 12A of the low temperature chuck table 12 using the Peltier effect is adopted. May be. Thereby, only the divided area 4 </ b> A is selectively cooled by the low temperature chuck table 12.

  The reason why the divided region 4A is cooled by the low-temperature chuck table 12 is to make it easy to divide by cooling the film adhesive 3 to make it brittle. That is, the film-like adhesive 3 has a high viscosity at room temperature, and even if the dicing tape 4 is pushed up from the lower side by the expand ring 16, the film-like adhesive 3 extends together with the dicing tape 4 and is not divided.

  The diameter of the low temperature chuck table 12 is preferably substantially equal to the diameter of the wafer 1. For example, if the diameter of the wafer 1 is 8 inches (about 200 mm in diameter), the diameter of the upper surface of the low-temperature chuck table 12 is also preferably about 8 inches.

  The low temperature plate 14 places the area 4E of the dicing tape 4 on the upper surface 14A thereof, thereby applying a second temperature lower than the first temperature to the area 4E of the dicing tape 4 by a contact method. For example, the second temperature is preferably 5 ° C. lower than the first temperature. In this case, the second temperature is about 0 to -10 ° C. As a result, a temperature difference is generated in which the region 4E has a relatively low temperature with respect to the divided region 4A.

  As a cooling method of the region 4E by the low temperature plate 14, there is a method of supplying a refrigerant into the low temperature plate 14 like the low temperature chuck table 12. Moreover, you may employ | adopt the system which freezes the upper surface 14A of the low-temperature plate 14 using the Peltier effect. As a result, the region 4E is locally cooled by the low temperature plate.

  The reason why the region 4E is cooled to a temperature lower than that of the divided region 4A by the low temperature plate 14 is that the hardness of the region 4E is made close to the hardness of the divided region 4A, or the hardness of the region 4E is made harder than the hardness of the divided region 4A. This is because That is, the expanding force transmitted from the expanding ring 16 to the dicing tape 4 is reliably transmitted from the region 4E to the divided region 4A, the divided region 4A is expanded to a desired expansion amount, and the wafer 1 is applied to each chip 6. This is to divide smoothly.

  Since the dicing tape 4 is expanded by the expanding ring 16, its size is naturally larger than that of the wafer 1. For example, if the diameter of the wafer 1 is 8 inches, the diameter of the dicing tape 4 is preferably about 300 mm. The wafer 1 is affixed to the approximate center portion of the dicing tape 4 via the film adhesive 3, and the length between the outer peripheral portion 1 </ b> A of the wafer 1 and the inner peripheral portion 5 </ b> A of the frame 5 is about 50 mm. It becomes.

  The diameter of the film adhesive 3 is slightly larger than the diameter of the wafer 1. That is, the film-like adhesive 3 is larger than the wafer 1 by, for example, about 1 cm in diameter in consideration of the amount of deviation when the wafer 1 is attached to the film-like adhesive 3. A region between the outer peripheral portion 3A of the film adhesive 3 and the inner peripheral portion 5A of the frame 5 corresponds to the non-divided region 4B, and the non-divided region 4B includes a push-up region 4D and a region 4E. In FIG. 1, the difference in diameter between the wafer 1 and the film adhesive 3 is exaggerated.

  The expand ring 16 is arranged inside the low temperature plate 14 so as to surround the low temperature chuck table 12, and is connected to a ring elevating mechanism 18 that constitutes an expanding means and is moved up and down. A roller 20 is rotatably provided on the upper surface 16B of the expanding ring 16 that pushes up the push-up area 4D of the dicing tape 4 in order to reduce the frictional force with the push-up area 4D. In FIG. 1, the expanding ring 16 waiting in the lowered position is shown. The expand ring 16 is preferably made of a metal having good thermal conductivity such as aluminum.

  Here, in the wafer 1 shown in FIG. 10, the division lines are processed in a lattice shape in advance by laser irradiation or the like. The expanding ring 16 shown in FIG. 1 rises to push up the pushing area 4D of the dicing tape 4 from below to expand the dicing tape 4 (see FIG. 4). By expanding the dicing tape 4 in this way, the wafer 1 is divided along the division line, and the wafer 1 is divided into individual chips 6 together with the film adhesive 3.

  Returning to FIG. 1, the frame 5 of the wafer unit 2 is fixed to the frame fixing mechanism 22. A sub ring 24 is provided on the outer peripheral side of the expand ring 16. The sub ring 24 is moved up and down by the ring lifting mechanism 18 together with the expanding ring 16. The sub-ring 24 has a function of maintaining the expanded state of the expanded dicing tape 4 and maintaining the interval between the divided individual chips 6 (see FIG. 5).

  The operation of the workpiece dividing apparatus 10A that divides the wafer 1 into individual chips 6 will be described below with reference to the flowchart of FIG. 2 and the block diagram of the workpiece dividing apparatus 10A of FIG.

  In the workpiece dividing apparatus 10A of the embodiment, it is important to provide a temperature difference between the divided region 4A and the region 4E during expansion. Therefore, in the workpiece dividing apparatus 10A, as shown in FIG. 3, the operations of the low-temperature chuck table 12, the low-temperature plate 14, and the ring elevating mechanism 18 are controlled under the temperature control by the same control unit 40. That is, when the first temperature is applied to the divided region 4A by the low-temperature chuck table 12 and the second temperature is applied to the region 4E by the low-temperature plate 14, the control unit 40 raises the ring lifting mechanism 18 to increase the dicing tape. 4 expands.

  First, in step S100 of FIG. 2, the frame 5 of the wafer unit 2 is fixed to the frame fixing mechanism 22 as shown in FIG. As a result, the divided area 4A of the wafer unit 2 is placed on the upper surface 12A of the low-temperature chuck table 12, and the area 4E is placed on the upper surface 14A of the low-temperature plate 14. The control unit 40 drives the low temperature chuck table 12 and the low temperature plate 14 in advance, and sets the temperature of the low temperature chuck table 12 to the first temperature and the temperature of the low temperature plate 14 to the second temperature lower than the first temperature.

  Next, in the temperature difference generation process in step S110 of FIG. 2, the divided area 4A of the wafer unit 2 is vacuum-sucked by the low temperature chuck table 12, and the divided area 4A is reliably brought into contact with the upper surface 12A of the low temperature chuck table 12. At this time, since the low temperature chuck table 12 is set to the first temperature, the contact gives a temperature of about 5 to −5 ° C., which is the first temperature, to the divided region 4A, and the divided region 4A has the first temperature. To be cooled. Thereby, the film adhesive 3 is made brittle and is easily cracked by applying an expanding force.

  Simultaneously with the cooling of the divided area 4A by the low temperature chuck table 12, the area 4E is in contact with the low temperature plate 14, so that the area 4E is given a second temperature 5 ° C. lower than the divided area 4A, and the area 4E Cool to the second temperature. As a result, the region 4E has a relatively low temperature relative to the divided region 4A. That is, the hardness of the region 4E is made closer to the hardness of the divided region 4A, or the hardness of the region 4E is harder than the hardness of the divided region 4A.

  Next, in the expanding step in step S120 of FIG. 2, as shown in FIG. 4, the expanding ring 16 is raised by the ring lifting mechanism 18 to expand the dicing tape 4, and the wafer 1 together with the film adhesive 3 To divide.

  Specifically, the control unit 40 releases the vacuum suction of the divided region 4A by the low-temperature chuck table 12, and the control unit 40 controls the ring lifting mechanism 18 to raise the expand ring 16 and the sub ring 24. The expansion of the expand ring 16 is pushed up by 15 mm at 400 mm / sec, for example. At this time, the sub ring 24 stops at a position below the frame 5. At this time, in the dicing tape 4, the hardness of the region 4E is made closer to the hardness of the divided region 4A, or the hardness of the region 4E is made harder than the hardness of the divided region 4A. The expanding force transmitted to 4 is reliably transmitted from the region 4E to the divided region 4A via the push-up region 4D, and the divided region 4A expands to a desired expansion amount. As a result, the wafer 1 is divided along the division lines, and is smoothly divided into individual chips 6. Further, a gap of several μm to 100 μm is formed between the divided individual chips 6. However, since the film adhesive 3 is cooled and becomes brittle, the film adhesive 3 is also formed on the wafer 1. At the same time, it is divided along the division line. As a result, the wafer 1 is smoothly divided into chips 6 each having the film adhesive 3 on the back surface.

  When the expansion by the expanding ring 16 is released, the dicing tape 4 is restored to its original shape due to its elasticity, and there is no gap between the chips 6, so that the expanded state of the dicing tape 4 is at least in the region where each chip 6 exists. Need to maintain.

  Therefore, in step S130 of FIG. 2, as shown in FIG. 5, the sub-ring 24 is further raised and inserted into the upper position of the frame 5, and the undivided region 4B of the expanded dicing tape 4 is connected to the sub-ring 24. Clamp it with the frame 5. Alternatively, there is a method in which the dicing tape 4 is thermally contracted using heat to maintain the expanded state.

  Next, in step S140 of FIG. 2, the expand ring 16 is lowered and the expansion of the dicing tape 4 by the expand ring 16 is released. At this time, since the sub ring 24 is left at the position of FIG. 5, the expanded state of the dicing tape 4 is maintained. Thereby, since the clearance gap between each chip | tip 6 is maintained widely, it can prevent that the film adhesive 3 adheres again, and the pick-up of the chip | tip 6 from the dicing tape 4 can also be implemented easily. The above is the operation of the workpiece dividing apparatus 10A whose operation is controlled by the control unit 40.

  According to the workpiece dividing apparatus 10A of the first embodiment configured as described above, the low temperature chuck table 12 that applies the first temperature to the divided region 4A, and the second temperature that is lower than the first temperature is applied to the region 4E. Since the low-temperature plate 14 is provided separately, a relative temperature difference (for example, 5 ° C.) is given to the divided region 4A and the region 4E, and the hardness of the region 4E is made close to the hardness of the divided region 4A. The hardness of the region 4E can be made harder than the hardness of the divided region 4A.

  Accordingly, the workpiece dividing apparatus 10A of the first embodiment can eliminate or reduce the difference in expansion amount between the divided region 4A and the region 4E of the dicing tape 4 during the expanding process. Can be expanded to an expansion amount. Therefore, the wafer 1 can be smoothly divided into individual chips 6 without being affected by the difference in expansion amount of the dicing tape 4.

  Further, the region 4E is set to a region between the outer peripheral portion 16A of the expanding ring 16 and the inner peripheral portion 5A of the frame 5. That is, in the dicing tape 4, the push-up area 4D with which the expand ring 16 abuts is excluded from the area 4E to which the second temperature is applied. Accordingly, it is possible to prevent the push-up region 4D from becoming brittle due to the effect of applying the second temperature to the push-up region 4D and breaking at the time of expansion. Depending on the second temperature, the entire region of the non-divided region 4B may be cooled to the second temperature. That is, the push-up area 4D may also be cooled to the second temperature.

  The low temperature chuck table 12 is a member that is brought into contact with the divided region 4A and applies a first temperature to the divided region 4A, and the low temperature plate 14 is brought into contact with the region 4E to locally apply the second temperature to the region 4E. It is a member to be given. As a result, the divided region 4A can be cooled to the first temperature, and the region 4E can be cooled to the target temperature in a short time.

  Further, as an example, the first temperature by the low temperature chuck table 12 is set to 5 to -5 ° C., and the second temperature by the low temperature plate 14 is set to 5 ° C. lower than the first temperature. Can be made closer to the hardness of the divided region 4A, or the hardness of the region 4E can be made harder than the hardness of the divided region 4A.

  As another form, the low temperature plate 14 may be brought into contact with the region 4E from above the dicing tape 4 to cool the region 4E to the second temperature. However, if the low temperature plate 14 is brought into contact with the region 4E from the upper side of the dicing tape 4, the low temperature plate 14 may come into contact with the film adhesive 3, and in this case, the low temperature plate 14 is in the form of a film. Adhere to the adhesive 3. When the low temperature plate 14 is peeled off from the film adhesive 3, the dicing tape 4 vibrates, and chip vibration may occur due to the vibration. In the workpiece dividing apparatus 10A of the first embodiment, since the low temperature plate 14 is in contact with the region 4E from the lower side of the dicing tape 4, it is possible to prevent the occurrence of the above-described chip crack.

  The gist of the present invention is to generate a temperature difference in which the non-divided area 4B is relatively low in temperature relative to the divided area 4A. Therefore, it is also within the scope of the present invention to generate a temperature difference in which the non-divided region 4B has a relatively low temperature with respect to the divided region 4A by cooling the region 4E and heating the divided region 4A. For example, the same effect can be obtained by locally cooling the region 4E to 0 to −10 ° C. by the cooling method and locally heating the divided region 4A by 5 ° C. higher than this temperature by the heating method.

  Further, as another form of use, by cooling the region 4E and heating the divided region 4A, the stress at the time of expansion is applied more greatly to the divided region 4A, so that the composite of the metal on the planned dividing line This is advantageous when the membrane is divided during expansion.

  More specifically, in the wafer 1 in which the division planned lines are processed in advance by laser irradiation or the like, only the silicon that is the base material of the wafer 1 is divided by the workpiece dividing apparatus 10A. For this reason, when a metal composite film exists on the planned division line, the metal composite film is not divided even after processing the planned division line, and when it is not divided at the time of subsequent expansion, It will cause a decrease in product production. Therefore, since the workpiece dividing apparatus 10A of the first embodiment can cool the region 4E and heat the divided region 4A, stress during expansion is applied to the divided region 4A. Thereby, since a larger stress acts on the divided region 4A, the metal composite film can be reliably divided.

[Work Dividing Device 10B of Second Embodiment]
FIG. 6 is a cross-sectional view of the main part of the workpiece dividing apparatus 10B of the second embodiment, and the same or similar members as those of the workpiece dividing apparatus 10A of the first embodiment shown in FIG. The description is omitted.

  In the workpiece dividing device 10B, the difference in the configuration with respect to the workpiece dividing device 10A is that the region 4E is locally cooled by the cooling air 28 injected from the nozzle 26, thereby giving the region 4E a second temperature. . In this case, the temperature of the cooling air 28 is set to a second temperature lower than the first temperature by the low-temperature chuck table 12, thereby locally cooling the region 4 </ b> E to the second temperature.

  Moreover, in the workpiece | work division | segmentation apparatus 10B, the film-like adhesive material 3 is prevented from peeling from the dicing tape 4 by the wind pressure of the cooling air 28 by injecting the cooling air 28 to the area | region 4E from the downward side of the dicing tape 4. Yes.

  Like the workpiece dividing device 10B, the first temperature is locally applied to the divided region 4A by the contact-type low-temperature chuck table 12, and further, the non-contact type cooling air 28 is locally blown to the region 4E. Even when two temperatures are applied, an effect equivalent to that of the workpiece dividing apparatus 10A can be obtained. Further, similarly to the workpiece dividing apparatus 10A, the region 4E may be cooled and the divided region 4A may be heated.

[Work Dividing Device 10C of Third Embodiment]
FIG. 7 is a cross-sectional view of a main part of a workpiece dividing apparatus 10C according to the third embodiment. The workpiece dividing apparatus 10A according to the first embodiment shown in FIG. 1 and the workpiece dividing apparatus according to the second embodiment shown in FIG. About the member which is the same as that of 10B, or similar, the same code | symbol is attached | subjected and description is abbreviate | omitted.

  In the workpiece dividing apparatus 10C, the difference in the configuration with respect to the workpiece dividing apparatus 10B is that the atmosphere including the dicing tape 4 is cooled by cooling the internal air of the chamber 34 by the cooling air 32 injected from the cold air injection port 30. The first temperature is applied to the entire dicing tape 4. In this case, the temperature of the cooling air 32 is set to the first temperature by the low temperature chuck table 12. In the workpiece dividing apparatus 10C, the cooling air 32 corresponds to the atmosphere cooling unit, and the cooling air 28 blown locally from the nozzle 26 corresponds to the local cooling unit. Further, the cooling by the cooling air 32 corresponds to the atmosphere cooling process, and the cooling by the cooling air 28 corresponds to the local cooling process.

  While cooling the atmosphere including the dicing tape 4 with the cooling air 32 as in the work dividing device 10C, the region 4E is locally cooled with the cooling air 28, thereby giving the divided region 4A a first temperature, You may provide 2nd temperature to the non-division area | region 4B. As a result, a temperature difference in which the non-divided region 4B is relatively low in temperature relative to the divided region 4A can be generated, so that an effect equivalent to that of the workpiece dividing devices 10A and 10B can be obtained. Further, similarly to the workpiece dividing apparatuses 10A and 10B, the region 4E may be cooled and the divided region 4A may be heated.

[Work Dividing Device 10D of Fourth Embodiment]
FIG. 8 is a cross-sectional view of a main part of a workpiece dividing apparatus 10D according to the fourth embodiment. The workpiece dividing apparatus 10A according to the first embodiment shown in FIG. 1 and the workpiece dividing apparatus according to the third embodiment shown in FIG. About the member which is the same as that of 10C, or similar, the same code | symbol is attached | subjected and description is abbreviate | omitted.

  In the workpiece dividing apparatus 10D, the difference in configuration with respect to the workpiece dividing apparatus 10C is that the region 4E is locally cooled by the low-temperature plate 14 to thereby apply the second temperature to the region 4E. In the workpiece dividing apparatus 10D, the low temperature plate 14 corresponds to the local cooling means, and the cooling air 32 corresponds to the atmosphere cooling means. Further, the cooling by the cooling air 32 corresponds to the atmosphere cooling process, and the cooling by the low temperature plate 14 corresponds to the local cooling process.

  While cooling the atmosphere including the dicing tape 4 with the cooling air 32 as in the workpiece dividing device 10D, the region 4E is locally cooled with the low temperature plate 14, thereby giving a first temperature to the divided region 4A. The second temperature may be applied to the region 4E. Thereby, since the temperature difference in which the non-divided region 4B is relatively low in temperature can be generated with respect to the divided region 4A, the same effect as the workpiece dividing devices 10A, 10B, and 10C can be obtained. Further, similarly to the workpiece dividing devices 10A, 10B, and 10C, the region 4E may be cooled and the divided region 4A may be heated.

[Work Dividing Device 10E of Fifth Embodiment]
FIG. 9 is a cross-sectional view of a main part of a workpiece dividing apparatus 10E according to the fifth embodiment. The workpiece dividing apparatus 10A according to the first embodiment shown in FIG. 1 and the workpiece dividing apparatus according to the fourth embodiment shown in FIG. Members that are the same as or similar to 10D are assigned the same reference numerals, and descriptions thereof are omitted.

  In the workpiece dividing apparatus 10E, the difference in configuration with respect to the workpiece dividing apparatus 10A is that the atmosphere including the dicing tape 4 is cooled by cooling the internal air of the chamber 34 by the cooling air 36 injected from the cold air injection port 30. The second temperature is applied to the entire dicing tape 4. That is, the temperature of the cooling air 36 is set to the second temperature. In addition, a heating unit is provided in the low-temperature chuck table 12, and the divided region 4A is locally heated by the heating unit, thereby providing a first temperature higher than the second temperature. In the workpiece dividing apparatus 10E, the cooling air 36 corresponds to an atmosphere cooling unit, and the low temperature chuck table 12 corresponds to a local heating unit. Further, the cooling by the cooling air 36 corresponds to an atmosphere cooling process, and the heating by the low temperature chuck table 12 corresponds to a local heating process.

  While the atmosphere including the dicing tape 4 is cooled by the cooling air 36 as in the workpiece dividing device 10E, the divided region 4A is locally heated by the low-temperature chuck table 12 to thereby apply the first temperature to the divided region 4A. Then, the second temperature may be applied to the region 4E. Thereby, since the temperature difference in which the non-divided region 4B becomes relatively low with respect to the divided region 4A can be generated, the same effect as the workpiece dividing devices 10A, 10B, 10C, and 10D can be obtained.

  In the embodiment, the workpiece dividing apparatuses 10A to 10E that divide the wafer unit 2 having the film adhesive 3 have been described. However, even in the wafer unit 2 without the film adhesive 3, the first temperature application unit and the first temperature applying unit The present invention is effective even when the temperature difference (temperature of the divided region 4A> temperature of the region 4E) is added to the divided region 4A and the region 4E by the two temperature applying means. That is, even in the wafer unit 2 without the film adhesive 3, the hardness of the divided area 4 </ b> A is governed by the hardness of the wafer 1, and thus is harder to expand than the area 4 </ b> E. By giving a temperature difference as described above, the expansion amount of the divided region 4A becomes equal to the expansion amount of the region 4E, or the divided region 4A is easier to expand than the region 4E, so that the wafer 1 is divided smoothly. be able to.

  Further, even in the wafer unit 2 without the film adhesive 3, the region 4E may be cooled and the divided region 4A may be heated in order to make a temperature difference between the divided region 4A and the region 4E.

  Note that the dicing tape 4 has a difference in how it extends in the XY direction depending on the tape production direction. In principle, the direction parallel to the tape production direction tends to extend easily, and the orthogonal direction tends to hardly extend. Considering the elongation characteristics of the dicing tape 4 and the expanding direction of the expanding ring 16, the wafer unit 2 is set in the work dividing device, thereby improving the uniformity of the expansion of the dicing tape 4 during expansion. be able to.

  DESCRIPTION OF SYMBOLS 1 ... Wafer, 2 ... Wafer unit, 3 ... Film adhesive, 4 ... Dicing tape, 4A ... Divided area, 4B ... Non-divided area, 4C ... Fixed area, 4D ... Push-up area, 5 ... Frame, 10A, 10B, 10C, 10D, 10E ... Work dividing device, 12 ... Low temperature chuck table, 14 ... Low temperature plate, 16 ... Expanding ring, 18 ... Ring lifting mechanism, 20 ... Roller, 22 ... Frame fixing mechanism, 24 ... Sub-ring, 26 ... Nozzle 28 ... Cooling air, 30 ... Cool air injection port, 32 ... Cooling air, 34 ... Chamber, 36 ... Cooling air, 40 ... Control part

Claims (11)

In a workpiece dividing device that divides a wafer attached to a dicing tape and mounted on a ring-shaped frame into individual chips,
The dicing tape has a divided area to which the wafer is attached, and a non-divided area formed outside the divided area,
A temperature difference generating means for generating a temperature difference in which the non-divided region is relatively low in temperature relative to the divided region;
Expanding means for expanding the dicing tape in which the temperature difference is generated by the temperature difference generating means;
A workpiece dividing device. The temperature difference generating means includes
First temperature applying means for applying a first temperature to the divided region;
Second temperature applying means for applying a second temperature lower than the first temperature to the non-divided region;
The workpiece dividing apparatus according to claim 1, comprising: The expanding means has an expanding ring that pushes up the non-divided region of the dicing tape,
The said 2nd temperature provision means provides the said 2nd temperature to the area | region located between the outer peripheral part of the said expand ring and the inner peripheral part of the said frame among the said non-division | segmentation area | regions. Work dividing device. The temperature difference generating means includes
Atmosphere cooling means for cooling the atmosphere containing the dicing tape;
Local cooling means for locally cooling the non-divided region of the dicing tape;
The workpiece dividing apparatus according to claim 2, comprising: The temperature difference generating means includes
Atmosphere cooling means for cooling the atmosphere containing the dicing tape;
Local heating means for locally heating the divided region of the dicing tape;
The workpiece dividing apparatus according to claim 2, comprising: In a work dividing method for dividing a wafer attached to a dicing tape and mounted on a ring-shaped frame into individual chips,
The dicing tape has a divided area to which the wafer is attached, and a non-divided area formed outside the divided area,
A temperature difference generating step for generating a temperature difference in which the non-divided region is relatively low in temperature with respect to the divided region;
An expanding step of expanding the dicing tape in which the temperature difference has occurred;
A work dividing method comprising: The temperature difference generating step includes
The work dividing method according to claim 6, wherein a first temperature is applied to the divided area, and a second temperature lower than the first temperature is applied to the non-divided area. The temperature difference generating step includes
The work dividing method according to claim 7, wherein the second temperature is applied to an area located between an outer peripheral part of an expanding ring that expands the dicing tape and an inner peripheral part of the frame in the non-divided area. . The temperature difference generating step includes
The work dividing method according to claim 7, comprising: an atmosphere cooling step for cooling an atmosphere including the dicing tape; and a local cooling step for locally cooling the non-divided region of the dicing tape. The temperature difference generating step includes
The workpiece dividing method according to claim 7, further comprising: an atmosphere cooling step for cooling an atmosphere including the dicing tape; and a local heating step for locally heating the divided region of the dicing tape. 11. The work dividing method according to claim 6, wherein the wafer is attached to the dicing tape via a film adhesive.

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