JP2017521245A - システムの自己調節のための方法 - Google Patents
システムの自己調節のための方法 Download PDFInfo
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- JP2017521245A JP2017521245A JP2016575510A JP2016575510A JP2017521245A JP 2017521245 A JP2017521245 A JP 2017521245A JP 2016575510 A JP2016575510 A JP 2016575510A JP 2016575510 A JP2016575510 A JP 2016575510A JP 2017521245 A JP2017521245 A JP 2017521245A
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Abstract
Description
(I)制御体積の中から外へ磁化可能及び/又は磁性粒子を輸送するため又は制御体積中に上記粒子を局在化させるために、磁場を利用する工程、
(II)制御体積中の、強磁性又は常磁性である磁化可能及び/又は磁性粒子の磁気的特性を、磁化可能及び/又は磁性粒子の温度Tpを変化させること又は磁化可能及び/又は磁性粒子の組成を変化させることによって変化させる工程
を含む、システムの自己調節のための方法によって達成される。
B=μ0・μr・H (2)
と線形的に相関し、式中、μ0は、磁場定数、すなわち、真空の透磁率であり、μγは、磁石に含まれる材料の磁場に対する影響の尺度である、相対的透磁率である。
Fm=μ0・Vp・Mp・▽H (3)
を及ぼし、式中、μ0は、磁場定数であり、Vpは、粒子体積であり、Mpは、粒子の磁化の強さであり、▽Hは、粒子の位置における磁場強度の勾配である。次に、粒子の磁化の強さは外部磁場の磁場強度Hに依存する:
Mp=κ・H (4)
Fm∞H・▽H (5)
FR+FU=FG+Fm (6)
で与えられる。
FeS+R−SH→FeS2+R−H
FeS+H2S→FeS2+H2
3種のサンプル、M1、M2及びM3を、異なる方法で生成した。すべてのサンプルが、酸化鉄、酸化銅及びニッケル酸化物を含んだ。すべてのサンプルが、67.3質量%のFe2O3、20.11質量%のCuO及び12.59質量%のNiOを含んだ。M1を生成するために、成分Fe2O3、CuO及びNiOを上記比率で混合し、モルタル中で粉砕し、900℃で9時間、焼成した。M2を生成するために、NiCO3・2Ni(OH)2、CuCO3・CU(OH)2及びFe(NO3)3・9H2Oを粉砕し、最初は120℃において16時間、次いで150℃において16時間乾燥し、その後、250℃において2時間、次いで400℃において2時間、次いで550℃において2時間熱分解して、対応する酸化物を保持した。次いで、サンプルを、900℃において9時間、焼成した。M3を生成するために、対応する金属水酸化物を、10のpH及び80℃の温度においてKOHと共沈殿させた。次いで、サンプルを100℃において16時間乾燥させ、350℃において4時間焼成した。サンプルの硬さを高めるために、すべての材料を打錠し、続いて、100μmから300μmまでの間の粒子サイズに粉砕した。
サンプルM2及びM3の触媒活性を分析した。この目的のために、各場合において、2.5gのサンプルをガラス瓶に入れ、90gのニトロベンゼン及び90gのアニリンをそこに添加した。混合物をオートクレーブ中で窒素パージし、その後、200rpmで攪拌しながら、35barの水素圧下で130℃まで加熱した。温度が130℃に到達したらすぐに、反応を開始するために攪拌速度を1300rpmまで増加させた。
サンプルの磁気的特性を定量的に観察するために、振り子実験を実行した。非磁性材料の振り子を磁性サンプル材料で満たした。永久磁石によって発生させた磁場を用いて、この振り子をその休止位置から解放した。その休止位置から移動した振り子を、ガスバーナーで発生させた600℃の熱い空気で加熱した。サンプルの温度を、振り子の取付物としての役目を同時にはたす熱電対によって連続的に測定した。永久磁石の温度は、一定であると仮定した。
例えば、WO2010/130604A2に記載の銅触媒を用いて、ニトロベンゼンからのアニリンの生成を実行する。内部熱交換器を有する流動床反応器において、発熱反応を実行する。反応物として水素を含む流体が流動床を通って流れる。ニトロベンゼンを液体形態の流動床に注入する。反応をこの方法で実行する場合、熱伝達が限定要因である。
比較例1のとおりに反応を実行するが、内部熱交換器を有する流動床反応器の代わりに磁気強化された流動床を採用し、触媒は磁性触媒粒子中に含まれる。磁性触媒粒子のキュリー温度Tcは、350℃である。磁性粒子が、それらのキュリー温度より低い温度を有する場合、印加した磁場の助けによって磁性粒子は流動床中に局在化される。流動床中の磁性粒子がそれらのキュリー温度より高温に加熱される場合、磁性粒子は、流体相とともに流動床から排出される。これは、磁性粒子とともに熱及び触媒質量を流動床から排出する。ここで、排出された熱の量は自己調節性であり、それは、より大量の熱が排出されると、より多くの磁性粒子が、それらのキュリー温度Tcよりも高温に加熱されるからである。
1 第1の流動床
1a 第2の流動床
1b 第3の流動床
1c 第4の流動床
2 粒子のキュリー温度Tcよりも低い温度Tp2の磁化可能及び/又は磁性粒子の第1の部分
3 粒子のキュリー温度Tcよりも高い温度Tp3の磁化可能及び/又は磁性粒子の第2の部分
4 流体相
5 電磁コイル
6 反応器壁
7 流体相4の流れ方向
8 磁化可能及び/又は磁性粒子の第2の部分3の動きの方向
9 交番磁場を発生させるための電磁コイル
10 スターラー
11 磁化可能及び/又は磁性粒子の第1の部分2の動きの方向
12 加熱要素
13 冷却ジャケット
14 加熱ジャケット
15 その中でサンプルが永久磁石の影響下にある領域
16 その中でサンプルが永久磁石の影響下にない領域
19 サンプルM3についてのグラフ
20 サンプルM2についてのグラフ
21 供給ライン
22 重力
23 グリッド
24 立て下り管
25 立て上り管
26 磁気搬送システムの磁場を発生させるための電磁コイル
27 第1のバッチ反応器
27a 第2のバッチ反応器
27b 第3のバッチ反応器
X [%]で表したニトロベンゼンの変換
t [時間]で表した時間
Claims (18)
- システムの自己調節のための方法であって、
(I)制御体積の中から磁化可能及び/又は磁性粒子を輸送するため又は制御体積中に前記粒子を局在化させるために、磁場を利用する工程、
(II)制御体積中の、強磁性又は常磁性である磁化可能及び/又は磁性粒子の磁気的特性を、磁化可能及び/又は磁性粒子の温度Tpを変化させること又は磁化可能及び/又は磁性粒子の組成を変化させることによって変化させる工程
を含む、方法。 - 制御体積中で少なくとも1種の化学反応が実行される、請求項1に記載の方法。
- 磁化可能及び/又は磁性粒子が、流動流体、重力又は磁場によって輸送される、請求項1又は2に記載の方法。
- 磁場が移動磁場である、請求項3に記載の方法。
- 温度Tpが上昇し、磁化可能及び/又は磁性粒子の温度Tpがそれらのキュリー温度Tcよりも高い場合に、磁化可能及び/又は磁性粒子が制御体積の中から輸送される、請求項1から4のいずれか一項に記載の方法。
- 少なくとも1種の化学反応が発熱反応である、請求項2から5のいずれか一項に記載の方法。
- 温度Tpが上昇し、温度Tpを上昇させるためのエネルギーの少なくとも一部が発熱反応によって解放される、請求項6に記載の方法。
- 温度Tpが低下し、磁化可能及び/又は磁性粒子の温度Tpがそれらのキュリー温度Tcよりも低い場合、磁化可能及び/又は磁性粒子が制御体積の中から輸送される、請求項1から4のいずれか一項に記載の方法。
- 少なくとも1種の化学反応が吸熱反応である、請求項2から4又は8のいずれか一項に記載の方法。
- 温度Tpが低下し、磁化可能及び/又は磁性粒子により放出されたエネルギーの少なくとも一部が、吸熱反応を実行するために利用される、請求項9に記載の方法。
- 磁化可能及び/又は磁性粒子が、少なくとも1種の化学反応を触媒するか又は触媒活性材料を含む、請求項2から10のいずれか一項に記載の方法。
- 磁化可能及び/又は磁性粒子が、少なくとも1種の化学反応の反応物又は生成物であるか、又は少なくとも1種の化学反応の反応物又は生成物を含む、請求項2から10のいずれか一項に記載の方法。
- いったん制御体積の中から運び出されると、磁化可能及び/又は磁性粒子が冷却され若しくは加熱され、及び/又は再生され、制御体積中にリサイクルされる、請求項1から12のいずれか一項に記載の方法。
- 磁化可能及び/又は磁性粒子の組成が、磁化可能及び/又は磁性粒子の少なくとも1種の成分の酸化状態を変化させる少なくとも1種の化学反応によって変化する、請求項2から4、6、9又は11から13のいずれか一項に記載の方法。
- 制御体積が、固定床反応器、膨張床反応器、流動床反応器又は懸濁反応器の一部である、請求項1から14のいずれか一項に記載の方法。
- 少なくとも1種の化学反応が水素化である、請求項2から15のいずれか一項に記載の方法。
- 磁化可能及び/又は磁性粒子のキュリー温度Tcと少なくとも1種の化学反応の反応温度Trとの相違が、150K以下である、請求項2から16のいずれか一項に記載の方法。
- 発熱反応が、閾値温度Tt未満の制御反応温度Tcrにおいて実行され、磁化可能及び/又は磁性粒子のキュリー温度Tcが、磁化可能及び/又は磁性粒子のキュリー温度Tcが反応温度Trよりも高く、閾値温度Ttよりも低く、磁化可能及び/又は磁性粒子のキュリー温度Tcと閾値温度Ttの相違が20℃以下であり、最初は制御反応温度Tcrに等しい反応温度Trが上昇して磁化可能及び/又は磁性粒子の温度Tpを上昇させて、磁化可能及び/又は磁性粒子の温度Tpがキュリー温度Tcを超えるようにさせたときにのみ、磁化可能及び/又は磁性粒子の磁気的特性が変化するように調整されている、請求項6、7、11、13又は15から16のいずれか一項に記載の方法。
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Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20191217 |