JP2017515305A - 配電網（ｐｄｎ）における交互配列電力構造 - Google Patents

配電網（ｐｄｎ）における交互配列電力構造 Download PDF

Info

Publication number
JP2017515305A
JP2017515305A JP2016563164A JP2016563164A JP2017515305A JP 2017515305 A JP2017515305 A JP 2017515305A JP 2016563164 A JP2016563164 A JP 2016563164A JP 2016563164 A JP2016563164 A JP 2016563164A JP 2017515305 A JP2017515305 A JP 2017515305A
Authority
JP
Japan
Prior art keywords
regions
netlist
metal layer
integrated device
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016563164A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017515305A5 (enExample
Inventor
ライアン・デイヴィッド・レーン
ユエ・リ
チャールズ・デイヴィッド・ペインター
ルエイ・カエ・ザン
Original Assignee
クアルコム，インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by クアルコム，インコーポレイテッド filed Critical クアルコム，インコーポレイテッド
Publication of JP2017515305A publication Critical patent/JP2017515305A/ja
Publication of JP2017515305A5 publication Critical patent/JP2017515305A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
    • H05K1/0224—Patterned shielding planes, ground planes or power planes
    • H05K1/0225—Single or multiple openings in a shielding, ground or power plane
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0091—Apparatus for coating printed circuits using liquid non-metallic coating compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0236—Electromagnetic band-gap structures
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/0929—Conductive planes
    • H05K2201/09309—Core having two or more power planes; Capacitive laminate of two power planes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Structure Of Printed Boards (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Ceramic Engineering (AREA)
JP2016563164A 2014-04-29 2015-04-28 配電網（ｐｄｎ）における交互配列電力構造 Pending JP2017515305A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/264,836 2014-04-29
US14/264,836 US10231324B2 (en) 2014-04-29 2014-04-29 Staggered power structure in a power distribution network (PDN)
PCT/US2015/028061 WO2015168160A1 (en) 2014-04-29 2015-04-28 Staggered power structure in a power distribution network (pdn)

Publications (2)

Publication Number Publication Date
JP2017515305A true JP2017515305A (ja) 2017-06-08
JP2017515305A5 JP2017515305A5 (enExample) 2018-05-31

Family

ID=53175170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016563164A Pending JP2017515305A (ja) 2014-04-29 2015-04-28 配電網（ｐｄｎ）における交互配列電力構造

Country Status (7)

Country Link
US (1) US10231324B2 (enExample)
EP (1) EP3138127B1 (enExample)
JP (1) JP2017515305A (enExample)
KR (1) KR20160146751A (enExample)
CN (1) CN106256020B (enExample)
BR (1) BR112016024898A2 (enExample)
WO (1) WO2015168160A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101933408B1 (ko) * 2015-11-10 2018-12-28 삼성전기 주식회사 전자부품 패키지 및 이를 포함하는 전자기기
KR102410661B1 (ko) 2015-11-13 2022-06-20 삼성디스플레이 주식회사 터치 패널 및 이를 포함하는 표시 장치
IT202000029210A1 (it) 2020-12-01 2022-06-01 St Microelectronics Srl Dispositivo a semiconduttore e corrispondente procedimento
CN113741728B (zh) * 2021-08-19 2023-11-28 武汉华星光电半导体显示技术有限公司 触控面板和移动终端

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009260195A (ja) * 2008-04-21 2009-11-05 Nec Corp 半導体装置及びその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3432963B2 (ja) 1995-06-15 2003-08-04 沖電気工業株式会社 半導体集積回路
US6484302B1 (en) 2000-07-11 2002-11-19 Hewlett-Packard Company Auto-contactor system and method for generating variable size contacts
US6495770B2 (en) * 2000-12-04 2002-12-17 Intel Corporation Electronic assembly providing shunting of electrical current
US6609242B1 (en) 2001-07-20 2003-08-19 Hewlett-Packard Development Company, L.P. Automated creation of power distribution grids for tiled cell arrays in integrated circuit designs
US6891260B1 (en) * 2002-06-06 2005-05-10 Lsi Logic Corporation Integrated circuit package substrate with high density routing mechanism
US6978433B1 (en) 2002-09-16 2005-12-20 Xilinx, Inc. Method and apparatus for placement of vias
US7089522B2 (en) 2003-06-11 2006-08-08 Chartered Semiconductor Manufacturing, Ltd. Device, design and method for a slot in a conductive area
US7237218B2 (en) * 2004-08-26 2007-06-26 Lsi Corporation Optimizing dynamic power characteristics of an integrated circuit chip
US7294791B2 (en) * 2004-09-29 2007-11-13 Endicott Interconnect Technologies, Inc. Circuitized substrate with improved impedance control circuitry, method of making same, electrical assembly and information handling system utilizing same
KR101265245B1 (ko) * 2006-11-01 2013-05-16 에이전시 포 사이언스, 테크놀로지 앤드 리서치 이중적층형 ｅｂｇ 구조체
US8230375B2 (en) 2008-09-14 2012-07-24 Raminda Udaya Madurawe Automated metal pattern generation for integrated circuits
US8106504B2 (en) * 2008-09-25 2012-01-31 King Dragon International Inc. Stacking package structure with chip embedded inside and die having through silicon via and method of the same
US8330489B2 (en) 2009-04-28 2012-12-11 International Business Machines Corporation Universal inter-layer interconnect for multi-layer semiconductor stacks
JP5581795B2 (ja) 2010-05-07 2014-09-03 ルネサスエレクトロニクス株式会社 スタンダードセル、スタンダードセルを備えた半導体装置、およびスタンダードセルの配置配線方法
CN103125020B (zh) 2010-09-29 2016-01-20 意法爱立信有限公司 具有集成去耦电容的电源布线
US8975670B2 (en) * 2011-03-06 2015-03-10 Monolithic 3D Inc. Semiconductor device and structure for heat removal
US8749322B2 (en) * 2011-09-02 2014-06-10 National Taiwan University Multilayer circuit board structure and circuitry thereof
US20170017744A1 (en) * 2015-07-15 2017-01-19 E-System Design, Inc. Modeling of Power Distribution Networks for Path Finding

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009260195A (ja) * 2008-04-21 2009-11-05 Nec Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP3138127A1 (en) 2017-03-08
US20150313006A1 (en) 2015-10-29
BR112016024898A2 (pt) 2017-08-15
US10231324B2 (en) 2019-03-12
KR20160146751A (ko) 2016-12-21
WO2015168160A1 (en) 2015-11-05
EP3138127B1 (en) 2023-01-04
CN106256020B (zh) 2019-03-22
CN106256020A (zh) 2016-12-21

Similar Documents

Publication Publication Date Title
US9583460B2 (en) Integrated device comprising stacked dies on redistribution layers
US9704796B1 (en) Integrated device comprising a capacitor that includes multiple pins and at least one pin that traverses a plate of the capacitor
US9368566B2 (en) Package on package (PoP) integrated device comprising a capacitor in a substrate
US9691694B2 (en) Substrate comprising stacks of interconnects, interconnect on solder resist layer and interconnect on side portion of substrate
US10037941B2 (en) Integrated device package comprising photo sensitive fill between a substrate and a die
JP2017507495A (ja) 高密度インターコネクトおよび再分配層を備える集積デバイス
EP3216055A1 (en) Integrated device package comprising silicon bridge in an encapsulation layer
JP2016536787A (ja) 基板における埋込みブリッジ構造
US8772951B1 (en) Ultra fine pitch and spacing interconnects for substrate
US9807884B2 (en) Substrate comprising embedded elongated capacitor
CN113287196B (zh) 包括在第一方向上对齐的第一焊料互连和在第二方向上对齐的第二焊料互连的器件
JP2017515305A (ja) 配電網（ｐｄｎ）における交互配列電力構造
US20160056226A1 (en) Wafer level package (wlp) integrated device comprising electromagnetic (em) passive device in redistribution portion, and radio frequency (rf) shield
US9530739B2 (en) Package on package (PoP) device comprising a high performance inter package connection
US20160183379A1 (en) Substrate comprising an embedded capacitor
JP6192859B2 (ja) カプセル封止層の中にビアとしてワイヤを備える集積デバイス

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161101

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180409

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180409

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20181225

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190128

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20190909