JP2017502484A5 - - Google Patents

Download PDF

Info

Publication number
JP2017502484A5
JP2017502484A5 JP2016546884A JP2016546884A JP2017502484A5 JP 2017502484 A5 JP2017502484 A5 JP 2017502484A5 JP 2016546884 A JP2016546884 A JP 2016546884A JP 2016546884 A JP2016546884 A JP 2016546884A JP 2017502484 A5 JP2017502484 A5 JP 2017502484A5
Authority
JP
Japan
Prior art keywords
vacuum housing
electron beam
electron
vacuum
orifice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016546884A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017502484A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2014/058899 external-priority patent/WO2015051175A2/en
Publication of JP2017502484A publication Critical patent/JP2017502484A/ja
Publication of JP2017502484A5 publication Critical patent/JP2017502484A5/ja
Pending legal-status Critical Current

Links

JP2016546884A 2013-10-03 2014-10-02 検査、テスト、デバッグ、及び表面の改変のための電子ビーム誘導プラズマプローブの適用 Pending JP2017502484A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361886625P 2013-10-03 2013-10-03
US61/886,625 2013-10-03
PCT/US2014/058899 WO2015051175A2 (en) 2013-10-03 2014-10-02 Application of electron-beam induced plasma probes to inspection, test, debug and surface modifications

Publications (2)

Publication Number Publication Date
JP2017502484A JP2017502484A (ja) 2017-01-19
JP2017502484A5 true JP2017502484A5 (cg-RX-API-DMAC7.html) 2017-11-09

Family

ID=52779296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016546884A Pending JP2017502484A (ja) 2013-10-03 2014-10-02 検査、テスト、デバッグ、及び表面の改変のための電子ビーム誘導プラズマプローブの適用

Country Status (6)

Country Link
US (1) US20160299103A1 (cg-RX-API-DMAC7.html)
JP (1) JP2017502484A (cg-RX-API-DMAC7.html)
KR (1) KR20160066028A (cg-RX-API-DMAC7.html)
CN (1) CN105793716A (cg-RX-API-DMAC7.html)
TW (1) TW201530602A (cg-RX-API-DMAC7.html)
WO (1) WO2015051175A2 (cg-RX-API-DMAC7.html)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013012616A2 (en) 2011-07-15 2013-01-24 Orbotech Ltd. Electrical inspection of electronic devices using electron-beam induced plasma probes
EP3066341B1 (en) * 2013-11-04 2021-03-24 Aerojet Rocketdyne, Inc. Ground based systems and methods for testing reaction thrusters
CN104962863B (zh) * 2015-05-06 2018-05-25 中国科学院广州能源研究所 一种原子级真空气态3d打印系统
US20160368056A1 (en) * 2015-06-19 2016-12-22 Bharath Swaminathan Additive manufacturing with electrostatic compaction
US10497541B2 (en) 2016-05-19 2019-12-03 Nedal Saleh Apparatus and method for programmable spatially selective nanoscale surface functionalization
CN106199392B (zh) * 2016-06-27 2019-02-12 中国科学院深圳先进技术研究院 芯片单粒子效应探测方法及装置
UA126968C2 (uk) * 2016-06-29 2023-03-01 Тае Текнолоджіз, Інк. Комбінації проводу з потокової петлі і мініатюрного індуктивного зонда з мінеральною ізоляцією
JP7042071B2 (ja) * 2016-12-20 2022-03-25 エフ・イ-・アイ・カンパニー eビーム操作用の局部的に排気された容積を用いる集積回路解析システムおよび方法
KR20200022493A (ko) * 2017-08-02 2020-03-03 에이에스엠엘 네델란즈 비.브이. 전압 대비 결함 신호를 향상시키는 하전 입자 플러딩을 위한 시스템 및 방법
KR102399898B1 (ko) * 2017-09-26 2022-05-19 에이에스엠엘 네델란즈 비.브이. 후방 산란 입자에 의한 매립된 피쳐의 검출
US11179808B1 (en) 2018-07-11 2021-11-23 Rosemount Aerospace Inc. System and method of additive manufacturing
CN119480594A (zh) * 2018-12-31 2025-02-18 Asml荷兰有限公司 使用多束的透镜内晶片预充电和检查
US11491575B2 (en) 2019-04-16 2022-11-08 Arcam Ab Electron beam melting additive manufacturing machine with dynamic energy adjustment
CN110945641B (zh) * 2019-10-30 2021-06-08 长江存储科技有限责任公司 用于校准粒子束的垂直度的方法以及应用于半导体制造工艺的系统
CN114599934B (zh) * 2019-10-31 2024-10-11 卡尔蔡司Smt有限责任公司 用于测量har结构的形状偏差的fib-sem 3d断层成像术
KR102411068B1 (ko) * 2020-08-14 2022-06-22 주식회사 아이에스시 피검사 디바이스의 온도 조절을 위한 온도 조절 장치
KR20230052900A (ko) 2020-08-21 2023-04-20 에이에스엠엘 네델란즈 비.브이. 진공 시스템 밀봉용 인쇄 회로 기판
US11664189B2 (en) * 2020-10-04 2023-05-30 Borries Pte. Ltd. Apparatus of charged-particle beam such as scanning electron microscope comprising plasma generator, and method thereof
DE102020216518B4 (de) * 2020-12-22 2023-08-17 Carl Zeiss Smt Gmbh Endpunktbestimmung mittels Kontrastgas
CN114678246B (zh) * 2020-12-24 2025-10-14 中微半导体设备(上海)股份有限公司 用于电容耦合等离子处理器阻抗特性测量的测量装置和方法
CN114256058B (zh) * 2021-07-08 2025-09-09 宁波伯锐锶电子束科技有限公司 一种亲水性基片制作方法及装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5902741A (en) * 1986-04-18 1999-05-11 Advanced Tissue Sciences, Inc. Three-dimensional cartilage cultures
US6172363B1 (en) * 1996-03-05 2001-01-09 Hitachi, Ltd. Method and apparatus for inspecting integrated circuit pattern
US6952108B2 (en) * 2003-09-16 2005-10-04 Micron Technology, Inc. Methods for fabricating plasma probes
EP1798751A1 (en) * 2005-12-13 2007-06-20 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Protecting aperture for charged particle emitter
JP2008292372A (ja) * 2007-05-25 2008-12-04 Oht Inc 検査支援システムを搭載する回路検査装置とその検査支援方法
US20100068408A1 (en) * 2008-09-16 2010-03-18 Omniprobe, Inc. Methods for electron-beam induced deposition of material inside energetic-beam microscopes
US20130245505A1 (en) * 2011-04-08 2013-09-19 The Board of Trustees of the Leland Stanford Junior University Noninvasive Ultrasound-Based Retinal Stimulator: Ultrasonic Eye
WO2013012616A2 (en) * 2011-07-15 2013-01-24 Orbotech Ltd. Electrical inspection of electronic devices using electron-beam induced plasma probes
US8716673B2 (en) * 2011-11-29 2014-05-06 Fei Company Inductively coupled plasma source as an electron beam source for spectroscopic analysis

Similar Documents

Publication Publication Date Title
JP2017502484A5 (cg-RX-API-DMAC7.html)
JP2015046381A5 (cg-RX-API-DMAC7.html)
US8710436B2 (en) Ionization device, mass spectrometer including the ionization device, and image generation system including the ionization device
US9058966B2 (en) Ionization device, mass spectrometer including ionization device, image display system including mass spectrometer, and analysis method
CN107210182A (zh) 质谱分析装置及离子迁移率分析装置
JP6629424B2 (ja) 誘電率顕微鏡及び有機物試料の観察方法
US9269557B2 (en) Ionization device, mass spectrometer including the ionization device, and image generation system including the ionization device
WO2015051175A3 (en) Application of electron-beam induced plasma probes to inspection, test, debug and surface modifications
EP2362410A3 (en) Plasma igniter for an inductively coupled plasma ion source
MX2016006295A (es) Fuente de ion de ionizacion de susperficie apci concentrica, guia de ion, y metodo de uso.
JP2015046381A (ja) イオン化装置、それを有する質量分析装置及び画像作成システム
JP2014203733A (ja) 走査電子顕微鏡用試料ホルダ、走査電子顕微鏡像の観察システム、および走査電子顕微鏡像の観察方法
JP2013101918A5 (cg-RX-API-DMAC7.html)
US9190257B2 (en) Ionization method, mass spectrometry method, extraction method, and purification method
CN105895494B (zh) 一种质谱离子源装置
CN105698687A (zh) 飞秒激光等离子体通道长度的测量装置与方法
Keelor et al. An effective approach for coupling direct analysis in real time with atmospheric pressure drift tube ion mobility spectrometry
JP2009300357A (ja) 微弱放電発光計測装置
JP6167934B2 (ja) 質量分析装置
EP2355125A3 (en) Particle beam device and method for operation of a particle beam device
Kudryavtsev et al. Electron energy spectra in helium observed in a microplasma collisional electron spectroscopy detector
CN103163206A (zh) 一种复合电离源差分式离子迁移谱
JP2016143482A (ja) イオン化装置、それを有する質量分析装置及び画像作成システム
US20180033597A1 (en) Techniques for controlling distance between a sample and sample probe while such probe liberates analyte from a sample region for analysis with a mass spectrometer
WO2017103341A3 (en) Apparatus and method for optically detecting the emissions of a plasma produced in a conductive liquid by means of electrodes with different areas in contact with the liquid